Display substrate, preparation method thereof and display device

CN119856597APending Publication Date: 2025-04-18BOE TECHNOLOGY GROUP CO LTD +1
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
CN202380009836.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-07-28
Publication Date
2025-04-18

AI Technical Summary

Technical Problem

When existing OLED displays achieve high brightness and high resolution, it is difficult to effectively control the lateral leakage between pixels, resulting in problems such as cross-color light leakage. The conventional PDL structure is cured before evaporation, destroying the continuity of the cathode metal.

Method used

The PDL material with reflow characteristics is adopted, and the evaporation process is divided into the first evaporation process and the second evaporation process. The first evaporation process is completed before the PDL material performs the reflow process to ensure that the highly conductive material is disconnected. The second The evaporation process is carried out after the reflux process to ensure the overall surface continuity of the cathode metal.

Benefits of technology

The highly conductive material between the pixels is effectively disconnected, the transverse leakage is controlled, and the continuity of the cathode metal is ensured, which is conducive to the high brightness and high resolution design of OLED.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN119856597A_ABST
    Figure CN119856597A_ABST
Patent Text Reader

Abstract

The invention discloses a display substrate, a preparation method thereof and a display device. The display substrate comprises: a substrate (1); the first electrode layer (2) is arranged on the substrate (1); the pixel defining layer (3) is arranged on one side, far away from the substrate (1), of the first electrode layer (2); the first film layer group (5) is arranged on one side, far away from the substrate (1), of the pixel defining layer (3); the second film layer group (6) is arranged on one side, far away from the substrate (1), of the first film layer group (5); the first film layer group (5) comprises a first part (51) and a second part (52), and the orthographic projection of the first part (51) of the first film layer group (5) on the substrate (1) is at least partially overlapped with the orthographic projection of the first electrode layer (2) on the substrate (1); the orthographic projection of the second part (52) of the first film layer group (5) on the substrate (1) is at least partially overlapped with the orthographic projection of the pixel defining layer (3) on the substrate (1), and the first part (51) of the first film layer group (5) is disconnected from the second part (52) of the first film layer group (5); the second film layer group (6) comprises a first part (61) and a second part (62), and the first part (61) of the second film layer group (6) and the second part (62) of the second film layer group (6) extend continuously.
Need to check novelty before this filing date? Find Prior Art

Description

Display substrate, manufacturing method thereof, and display device Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a display substrate, a preparation method thereof, and a display device. Background Art

[0002] Organic Light-Emitting Diode (OLED) devices have attracted widespread attention due to their advantages, including self-luminescence, rich colors, fast response time, wide viewing angle, light weight, thin thickness, low power consumption, and flexible display capabilities. They are now widely used in mobile phones, televisions, wearable devices, and other devices. With the development of OLED technology, the resolution and brightness requirements of OLED screens are becoming increasingly higher. Some high-end OLED screens require resolutions exceeding 3000 PPI and brightness exceeding 5000 nits. How to design and manufacture OLED display products with high brightness and resolution is a key research topic for researchers.

[0003] Summary of the Invention

[0004] In one aspect, a display substrate, wherein the display substrate includes: a base substrate; a first electrode layer arranged on the base substrate, wherein the first electrode layer includes a plurality of first electrode patterns, the plurality of first electrode patterns are arranged in an array along a first direction and a second direction on the base substrate, and the plurality of first electrode patterns are spaced apart from each other along the first direction and the second direction; a pixel defining layer arranged on a side of the first electrode layer away from the base substrate, wherein the pixel defining layer includes a plurality of pixel defining structures, the plurality of pixel defining structures are arranged in an array along a first direction and a second direction on the base substrate, the plurality of pixel defining structures define a plurality of pixel openings, and the plurality of pixel openings respectively expose a portion of the plurality of first electrode patterns; a first film layer group arranged on a side of the pixel defining layer away from the base substrate, wherein the first film layer group includes at least one film layer; and a second film layer group arranged on a side of the first film layer group away from the base substrate, wherein the The second film layer group includes at least one film layer, wherein the first film layer group includes a first part and a second part, the orthographic projection of the first part of the first film layer group on the substrate substrate at least partially overlaps with the orthographic projection of at least one first electrode pattern on the substrate substrate, the orthographic projection of the second part of the first film layer group on the substrate substrate at least partially overlaps with the orthographic projection of at least one pixel defining structure on the substrate substrate, and the first part of the first film layer group and the second part of the first film layer group are disconnected; and the second film layer group includes a first part and a second part, the orthographic projection of the first part of the second film layer group on the substrate substrate at least partially overlaps with the orthographic projection of at least one first electrode pattern on the substrate substrate, the orthographic projection of the second part of the second film layer group on the substrate substrate at least partially overlaps with the orthographic projection of at least one pixel defining structure on the substrate substrate, and the first part of the second film layer group and the second part of the second film layer group extend continuously.

[0005] According to some exemplary embodiments, the pixel defining structure includes a top surface away from the base substrate, and the top surface has a convex arc shape.

[0006] According to some exemplary embodiments, the first portion of the first film layer group includes an end close to the pixel defining structure, the end is covered by the pixel defining structure, and the end is inserted between the pixel defining structure and the first electrode layer.

[0007] According to some exemplary embodiments, the thickness of the end is smaller than the thickness of other portions of the first portion of the first film layer group except the end; and / or the thickness of the end is smaller than the thickness of the second portion of the first film layer group.

[0008] According to some exemplary embodiments, an orthographic projection of a first portion of the first film layer group on the base substrate partially overlaps with an orthographic projection of a second portion of the first film layer group on the base substrate.

[0009] According to some exemplary embodiments, a portion of the second film layer group fills a gap between a first portion of the first film layer group and a second portion of the first film layer group.

[0010] According to some exemplary embodiments, a portion of the second film layer group filling the gap is in direct contact with a top surface of the pixel defining structure.

[0011] According to some exemplary embodiments, the angle between the tangent plane of the top surface of the pixel defining structure at a first position and the first surface of the base substrate is less than or equal to 60°, wherein the first surface of the base substrate is the surface of the base substrate facing the first electrode layer, and the first position is the position where the top surface of the pixel defining structure contacts the first film layer group.

[0012] According to some exemplary embodiments, the display substrate includes a second electrode layer disposed on a side of the first film layer group away from the base substrate, and the second film layer group includes at least the second electrode layer.

[0013] According to some exemplary embodiments, the display substrate further includes: a hole injection layer arranged on a side of the first electrode layer away from the base substrate; a hole transport layer arranged on a side of the hole injection layer away from the base substrate; an electron blocking layer arranged on a side of the hole transport layer away from the base substrate; a light-emitting layer arranged on a side of the electron blocking layer away from the base substrate; a hole blocking layer arranged on a side of the light-emitting layer away from the base substrate; an electron transport layer arranged on a side of the hole blocking layer away from the base substrate; an electron injection layer arranged on a side of the electron transport layer away from the base substrate; and a second electrode layer arranged on a side of the electron injection layer away from the base substrate, wherein the first film layer group includes a hole injection layer and a hole transport layer, and / or the second film layer group includes an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer and a second electrode layer.

[0014] According to some exemplary embodiments, the display substrate further includes: a first stacked film layer group arranged on a side of the first electrode layer away from the base substrate; a charge generation layer arranged on a side of the first stacked film layer group away from the base substrate; a second stacked film layer group arranged on a side of the charge generation layer away from the base substrate; and a second electrode layer arranged on a side of the second stacked film layer group away from the base substrate, wherein the first film layer group includes a first stacked film layer group and a charge generation layer, and / or the second film layer group includes a second stacked film layer group and a second electrode layer.

[0015] According to some exemplary embodiments, the first stacked film layer group includes: a hole injection layer disposed on a side of the first electrode layer away from the substrate; a hole transport layer disposed on a side of the hole injection layer away from the substrate; an electron blocking layer disposed on a side of the hole transport layer away from the substrate; a light-emitting layer disposed on a side of the electron blocking layer away from the substrate; a hole blocking layer disposed on a side of the light-emitting layer away from the substrate; an electron transport layer disposed on a side of the hole blocking layer away from the substrate; and an electron transport layer disposed on a side of the electron transport layer away from the substrate. injection layer, and / or, the second stacked film layer group includes: a hole injection layer arranged on the side of the charge generation layer away from the substrate; a hole transport layer arranged on the side of the hole injection layer away from the substrate; an electron blocking layer arranged on the side of the hole transport layer away from the substrate; a light-emitting layer arranged on the side of the electron blocking layer away from the substrate; a hole blocking layer arranged on the side of the light-emitting layer away from the substrate; an electron transport layer arranged on the side of the hole blocking layer away from the substrate; and an electron injection layer arranged on the side of the electron transport layer away from the substrate.

[0016] According to some exemplary embodiments, the display substrate further includes: a first stacked film layer group arranged on a side of the first electrode layer away from the base substrate; a first charge generation layer arranged on a side of the first stacked film layer group away from the base substrate; a second stacked film layer group arranged on a side of the first charge generation layer away from the base substrate; a second charge generation layer arranged on a side of the second stacked film layer group away from the base substrate; a third stacked film layer group arranged on a side of the second charge generation layer away from the base substrate; and a second electrode layer arranged on a side of the third stacked film layer group away from the base substrate, wherein the first film layer group includes the first stacked film layer group, the first charge generation layer, the second stacked film layer group and the second charge generation layer, and / or the second film layer group includes the third stacked film layer group and the second electrode layer.

[0017] According to some exemplary embodiments, the first stacked film layer group includes: a hole injection layer provided on a side of the first electrode layer away from the substrate; a hole transport layer provided on a side of the hole injection layer away from the substrate; an electron blocking layer provided on a side of the hole transport layer away from the substrate; a light-emitting layer provided on a side of the electron blocking layer away from the substrate; a hole blocking layer provided on a side of the light-emitting layer away from the substrate; an electron transport layer provided on a side of the hole blocking layer away from the substrate; and an electron injection layer provided on a side of the electron transport layer away from the substrate, and / or the second stacked film layer group includes: a hole injection layer provided on a side of the first charge generation layer away from the substrate; a hole transport layer provided on a side of the hole injection layer away from the substrate; and an electron blocking layer provided on a side of the hole transport layer away from the substrate. a light-emitting layer arranged on the side of the electron blocking layer away from the substrate; a hole blocking layer arranged on the side of the light-emitting layer away from the substrate; an electron transport layer arranged on the side of the hole blocking layer away from the substrate; and an electron injection layer arranged on the side of the electron transport layer away from the substrate, and / or the third stacked film layer group includes: a hole injection layer arranged on the side of the second charge generation layer away from the substrate; a hole transport layer arranged on the side of the hole injection layer away from the substrate; an electron blocking layer arranged on the side of the hole transport layer away from the substrate; a light-emitting layer arranged on the side of the electron blocking layer away from the substrate; a hole blocking layer arranged on the side of the light-emitting layer away from the substrate; an electron transport layer arranged on the side of the hole blocking layer away from the substrate; and an electron injection layer arranged on the side of the electron transport layer away from the substrate.

[0018] According to some exemplary embodiments, the pixel defining layer includes a photoresist material.

[0019] According to some exemplary embodiments, the photoresist material has a softening reflow characteristic, and the softening temperature of the photoresist material is lower than the glass transition temperature of each film layer in the first film layer group and the second film layer group.

[0020] According to some exemplary embodiments, the display substrate further includes: a plurality of microlenses arranged on a side of the second electrode layer away from the base substrate; and the orthographic projections of the plurality of microlenses on the base substrate are respectively located within the orthographic projections of the plurality of pixel openings on the base substrate.

[0021] According to some exemplary embodiments, a material of the plurality of micro lenses is the same as a material of at least a portion of the pixel defining layer.

[0022] According to some exemplary embodiments, a curvature of at least one of the microlenses is smaller than a curvature of the pixel-defining structure.

[0023] According to some exemplary embodiments, the display substrate further includes a plurality of color filter layers, wherein the plurality of color filter layers are located between the pixel defining layer and the layer where the plurality of microlenses are located; and the orthographic projections of adjacent microlenses and the pixel defining structure on the base substrate have a first overlapping portion, and the orthographic projections of any two adjacent color filter layers on the base substrate have a second overlapping portion, and the width of the first overlapping portion in the first direction is greater than the width of the second overlapping portion in the first direction.

[0024] According to some exemplary embodiments, the pixel defining layer includes a first sub-pixel defining layer and a second sub-pixel defining layer, the second sub-pixel defining layer is located on a side of the first sub-pixel defining layer away from the base substrate, the orthographic projection of the second sub-pixel defining layer on the base substrate at least partially overlaps with the orthographic projection of the first sub-pixel defining layer on the base substrate; and the first sub-pixel defining layer includes a photoresist material, and the second sub-pixel defining layer includes an inorganic material.

[0025] In another aspect, a display device is provided, wherein the display device comprises a display substrate as described in any one of the above claims.

[0026] On the other hand, a method for preparing a display substrate is provided, wherein the method includes: forming a first electrode material layer on a base substrate, and performing a composition process on the first electrode material layer to form a first electrode layer including a plurality of first electrode patterns, wherein the plurality of first electrode patterns are arranged in an array along a first direction and a second direction on the base substrate, and the plurality of first electrode patterns are spaced apart from each other along the first direction and the second direction; forming a pixel defining material layer on a side of the first electrode layer away from the base substrate, and performing a composition process on the pixel defining material layer to form a pixel defining layer including a plurality of pixel defining structures, wherein the plurality of pixel defining structures are arranged in an array along a first direction and a second direction on the base substrate, and the plurality of pixel defining structures define a plurality of pixel openings, and the plurality of pixel openings respectively expose a portion of the plurality of first electrode patterns; forming a first film layer group on a side of the pixel defining layer away from the base substrate by a first evaporation process, wherein the first film layer group includes at least one film layer; performing a reflow process on the base substrate on which the pixel defining layer and the first film layer group are formed process; and forming a second film layer group on a side of the first film layer group away from the base substrate by a second evaporation process, wherein the second film layer group includes at least one film layer, wherein the first film layer group includes a first portion and a second portion, the orthographic projection of the first portion of the first film layer group on the base substrate at least partially overlaps with the orthographic projection of at least one first electrode pattern on the base substrate, the orthographic projection of the second portion of the first film layer group on the base substrate at least partially overlaps with the orthographic projection of at least one pixel defining structure on the base substrate, and the first portion of the first film layer group and the second portion of the first film layer group are disconnected; and the second film layer group includes a first portion and a second portion, the orthographic projection of the first portion of the second film layer group on the base substrate at least partially overlaps with the orthographic projection of at least one first electrode pattern on the base substrate, the orthographic projection of the second portion of the second film layer group on the base substrate at least partially overlaps with the orthographic projection of at least one pixel defining structure on the base substrate, and the first portion of the second film layer group and the second portion of the second film layer group extend continuously.

[0027] According to some exemplary embodiments, a pixel defining material layer is formed on a side of the first electrode layer away from the base substrate, and a patterning process is performed on the pixel defining material layer to form a pixel defining layer including a plurality of pixel defining structures, specifically comprising: coating a photoresist material on a side of the first electrode layer away from the base substrate; and performing an exposure and development process on the photoresist material to form a plurality of pixel defining structures.

[0028] According to some exemplary embodiments, the photoresist material has a softening reflow characteristic, and the softening temperature of the photoresist material is lower than the glass transition temperature of each film layer in the first film layer group and the second film layer group.

[0029] According to some exemplary embodiments, the method further includes: before the first evaporation process, performing a baking process on the base substrate on which the pixel defining layer is formed, and the softening temperature of the photoresist material is higher than a baking temperature in the baking process.

[0030] According to some exemplary embodiments, before the reflow process, the angle between the top surface of the pixel defining structure and the first surface of the substrate substrate at a second position is greater than or equal to 85°, wherein the first surface of the substrate substrate is the surface of the substrate substrate facing the first electrode layer, and the second position is the position where the top surface of the pixel defining structure contacts the first electrode layer; and / or, after the reflow process, the angle between the tangent surface of the top surface of the pixel defining structure at the first position and the first surface of the substrate substrate is less than or equal to 60°, wherein the first surface of the substrate substrate is the surface of the substrate substrate facing the first electrode layer, and the first position is the position where the top surface of the pixel defining structure contacts the first film layer group. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The above contents and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0032] FIG1 is a partial schematic plan view of a display substrate according to some exemplary embodiments of the present disclosure;

[0033] FIG2 is a schematic cross-sectional view of a display substrate taken along line AA′ in FIG1 according to some exemplary embodiments of the present disclosure;

[0034] FIG3 is a schematic cross-sectional view of a display substrate according to some other exemplary embodiments of the present disclosure, taken along line AA′ in FIG1 ;

[0035] FIG4 is a schematic diagram of a single-layer OLED device structure of a light-emitting unit according to some exemplary embodiments of the present disclosure;

[0036] FIG5 is a schematic diagram of a double-layer OLED device structure of a light-emitting unit according to some exemplary embodiments of the present disclosure;

[0037] FIG6 is a schematic structural diagram of the first stacked film layer group T1 in FIG5 ;

[0038] FIG7 is a schematic structural diagram of the second stacked film layer group T2 in FIG5 ;

[0039] FIG8 is a schematic diagram of a three-layer OLED device structure of a light-emitting unit according to some exemplary embodiments of the present disclosure;

[0040] FIG9 is a schematic structural diagram of the third stacked film layer group in the three-layer OLED device in FIG8 ;

[0041] FIG10A is a partial cross-sectional schematic diagram of a display substrate according to some other exemplary embodiments of the present disclosure; FIG10B is a partial cross-sectional schematic diagram of a display substrate according to some other exemplary embodiments of the present disclosure, showing a color filter layer; FIG10C is a partial cross-sectional schematic diagram of a display substrate according to some other exemplary embodiments of the present disclosure, showing a first sub-pixel defining layer and a second sub-pixel defining layer;

[0042] 11A-11F illustrate a method for preparing a display substrate according to an exemplary embodiment of the present disclosure;

[0043] FIG12 is a flow chart of manufacturing a pixel defining structure from a display substrate according to some exemplary embodiments of the present disclosure; and

[0044] FIG. 13 is a partial cross-sectional view of a display substrate before a reflow process is performed according to some exemplary embodiments of the present disclosure.

[0045] It should be noted that, for the sake of clarity, in the drawings used to describe the embodiments of the present invention, the sizes of layers, structures or regions may be enlarged or reduced, that is, these drawings are not drawn according to the actual scale. DETAILED DESCRIPTION

[0046] To make the purpose, technical solutions, and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0047] It should be noted that in the drawings, the sizes and relative sizes of elements may be exaggerated for clarity and / or descriptive purposes. Thus, the sizes and relative sizes of the individual elements are not necessarily limited to those shown in the drawings. In the specification and drawings, the same or similar reference numerals indicate the same or similar parts.

[0048] Unless otherwise defined, technical or scientific terms used in this disclosure should have the ordinary meanings understood by those of ordinary skill in the art. The terms "first," "second," and similar terms used in this disclosure do not denote any order, quantity, or importance, but are simply used to distinguish different components. The terms "include," "comprising," and similar words mean that the element or object preceding the word encompasses the elements or objects listed after the word, and their equivalents, without excluding other elements or objects.

[0049] Unless otherwise specified, directional terms such as "upper," "lower," "left," "right," "inner," and "outer" are used herein to indicate positions or relationships based on the figures shown. These terms are intended solely to facilitate the description of the present disclosure and are not intended to indicate or imply that the devices, components, or parts referred to must have, be constructed, or operate in a specific orientation. It should be understood that when the absolute positions of the objects being described change, the relative positions they represent may also change accordingly. Therefore, these directional terms should not be construed as limiting the present disclosure.

[0050] It should be noted that, in this article, the term "the same layer" refers to a layer structure formed by using the same film-forming process to form a film layer used to form a specific pattern, and then patterning the film layer using the same mask through a single patterning process. Depending on the specific pattern, a single patterning process may include multiple exposure, development, or etching processes, and the specific pattern in the resulting layer structure may be continuous or discontinuous. In other words, multiple elements, components, structures, and / or parts located in the "same layer" are composed of the same material and are formed through the same patterning process. Typically, multiple elements, components, structures, and / or parts located in the "same layer" have approximately the same thickness.

[0051] Those skilled in the art should understand that, in this document, unless otherwise specified, the expression "height" or "thickness" refers to the dimension of the surface of each film layer arranged perpendicular to the display substrate, that is, the dimension along the light emitting direction of the display substrate, or the dimension along the normal direction of the display device.

[0052] In this document, the directional expressions "first direction" and "second direction" are used to describe different directions along a pixel unit, such as the longitudinal and transverse directions of a pixel unit, or the row and column directions of a sub-pixel arrangement. It should be understood that such expressions are merely exemplary descriptions and are not intended to limit the present disclosure.

[0053] OLED is suitable for producing high-end display screens due to its self-luminous, low power consumption, high color gamut, and flexible bendability. It is now widely used in mobile phones, TVs, wearable devices, and other devices. As the resolution and brightness requirements of OLED screens become higher and higher, silicon-based OLED and tandem OLED devices are being used. For example, the brightness of silicon-based OLED exceeds 5000 nits, and the sub-pixel pitch reaches the 1 micron level. The use of tandem technology and the reduction of pixel pitch make the problem of lateral leakage between pixels extremely prominent. In the production of existing conventional OLED displays, adjusting the pixel pitch and adjusting the highly conductive organic film layer material are mostly used as a means of controlling lateral leakage. Products using a tandem device structure and silicon-based products with extremely high PPI requirements require a special structural design of the pixel define layer (PDL) to minimize problems such as cross-color leakage caused by lateral leakage.

[0054] Currently, common PDLs are fabricated into special protrusions, grooves, inverted trapezoidal structures to block lateral leakage of organic film layers. The PDL profile is usually completely cured before vapor deposition, which disrupts the continuity of all subsequent film layers prepared near the PDL. However, disrupted cathode metal continuity can lead to increased cathode voltage and decreased device luminous efficiency. In severe cases, it can even cause problems such as black spots or anode-cathode short circuits. Therefore, developing a PDL solution that can effectively control lateral leakage between pixels without disrupting cathode continuity is extremely important for breakthroughs in high-end OLED display technology.

[0055] In an embodiment of the present disclosure, a PDL material with reflow properties is used, and the evaporation process is decomposed into a first evaporation process and a second evaporation process. The first evaporation process completes a first stage of evaporation, evaporating materials with higher conductivity, including hole injection materials, hole transport materials, charge generation layer materials, etc. The first evaporation process is completed before the PDL material undergoes a reflow process, ensuring that the highly conductive materials in the first stage of evaporation are disconnected at the PDL material. The PDL material is then subjected to a reflow process, making the PDL structure contour rounded. The second evaporation process is then performed, and the second evaporation process completes the second stage of evaporation. The second stage of evaporation includes all other OLED film layers outside the first stage of evaporation. The PDL structure with a rounded contour greatly ensures the continuity of the cathode metal across the entire surface after the second stage of evaporation. In the embodiment of the present disclosure, the use of PDL reflow technology not only effectively disconnects the highly conductive materials between pixels and controls lateral leakage between pixels, but also ensures the continuity of the cathode across the entire surface during the second stage of evaporation, which is conducive to achieving high brightness and high resolution OLED designs.

[0056] 1 is a partial schematic plan view of a display substrate according to some exemplary embodiments of the present disclosure, and FIG. 2 is a schematic cross-sectional view of the display substrate taken along line AA′ in FIG. 1 according to some exemplary embodiments of the present disclosure.

[0057] 1 and 2 , the display substrate includes: a base substrate 1; a first electrode layer 2 arranged on the base substrate 1, wherein the first electrode layer 2 includes a plurality of first electrode patterns 21, the plurality of first electrode patterns 21 are arranged in an array on the base substrate 1 along a first direction D1 and a second direction D2, and the plurality of first electrode patterns 21 are spaced apart from each other along the first direction D1 and the second direction D2; a pixel defining layer 3 arranged on a side of the first electrode layer 2 away from the base substrate 1, wherein the pixel defining layer 3 includes a plurality of pixel defining structures 31, the plurality of pixel defining structures 31 are arranged in an array on the base substrate 1 along the first direction D1 and the second direction D2, and the plurality of pixel defining structures 31 define a plurality of pixel openings 4, and the plurality of pixel openings 4 respectively expose a portion of the plurality of first electrode patterns 21.

[0058] In this embodiment, a light-emitting unit is provided at at least one pixel opening 4, and at least one light-emitting unit can emit one of red light, green light, and blue light. The light-emitting unit can be a single-layer OLED device or a tandem OLED device.

[0059] It should be noted that the embodiments of the present disclosure do not impose any special restrictions on the design of the pixel opening 4. For example, although the pixel opening 4 is schematically shown as a square in the accompanying drawings, in other embodiments, the pixel opening can also be various shapes such as a rectangle, an ellipse, a circle, a triangle, etc. In addition, the light-emitting units of different colors corresponding to different pixel openings can adopt various arrangement methods known in the art, and the embodiments of the present disclosure do not impose any special restrictions.

[0060] Referring to Figure 2 , the display substrate further comprises a first film layer group 5 disposed on a side of the pixel defining layer 3 away from the base substrate 1, wherein the first film layer group 5 comprises at least one film layer; and a second film layer group 6 disposed on a side of the first film layer group 5 away from the base substrate 1, wherein the second film layer group comprises at least one film layer. The first film layer group 5 comprises a first portion 51 and a second portion 52. The orthographic projection of the first portion 51 of the first film layer group on the base substrate 1 at least partially overlaps with the orthographic projection of at least one first electrode pattern 21 on the base substrate 1, and the orthographic projection of the second portion 52 of the first film layer group on the base substrate 1 at least partially overlaps with the orthographic projection of at least one pixel defining structure 31 on the base substrate 1. The first portion 51 of the first film layer group is disconnected from the second portion 52 of the first film layer group. The second film layer group 6 includes a first part 61 and a second part 62. The orthographic projection of the first part 61 of the second film layer group on the base substrate 1 at least partially overlaps with the orthographic projection of at least one first electrode pattern 21 on the base substrate 1. The orthographic projection of the second part 62 of the second film layer group on the base substrate 1 at least partially overlaps with the orthographic projection of at least one pixel defining structure 31 on the base substrate 1. The first part 61 of the second film layer group and the second part 62 of the second film layer group extend continuously.

[0061] In this embodiment, the evaporation process of the OLED device is divided into two evaporation processes, wherein the first evaporation process completes one stage of evaporation to form a first film layer group 5, and the second evaporation process completes two stages of evaporation to form a second film layer group 6. The first evaporation process completes the evaporation of the material with higher conductivity in the OLED device to form the first film layer group 5. The first film layer group 5 includes film layers such as a hole injection layer, a hole transport layer, and a charge generation layer. Since the first evaporation process is performed before the pixel defining layer 3 performs the reflow process, the pixel defining layer 3 has not yet formed the arc top surface as shown in Figure 2. Therefore, the first film layer group 5 of the one-stage evaporation is separated by the pixel defining structure 31 to form two parts. The two parts of the first film layer group 5 are the first part 51 of the first film layer group and the second part 52 of the first film layer group.

[0062] The pixel defining layer 3 includes a material with softening reflow properties. After a period of evaporation, a reflow process is performed on the pixel defining layer 3 so that the outline of the pixel defining structure 31 becomes rounded after the reflow process. The reflow process includes high temperature treatment, ultraviolet light irradiation, ultraviolet light irradiation and high temperature treatment. The reflow process is carried out in a vacuum chamber integrated with the evaporation machine. During the execution of the reflow process, the pixel defining structure 31 will gradually soften and deform. By controlling the reflow process conditions, the outline of the pixel defining structure formed after the reflow process can be adjusted so that the outline of the pixel defining structure 31 becomes rounded. Since at least a portion of the second portion 52 of the first film layer group formed by a section of evaporation material is above the pixel defining structure 31, during the execution of the reflow process, at least a portion of the second portion 52 of the first film layer group will deform as the pixel defining structure 31 deforms. Because the fluidity of the pixel-defining structure 31 is greater than that of the second portion 52 of the first film layer group, after the reflow process is performed, the first portion 51 of the first film layer group and the second portion 52 of the first film layer group are still separated by the pixel-defining structure 31. Therefore, after completing a period of evaporation and reflow processes, the orthographic projection of the first portion 51 of the first film layer group on the base substrate 1 at least partially overlaps with the orthographic projection of at least one of the first electrode patterns 21 on the base substrate, and the orthographic projection of the second portion 52 of the first film layer group on the base substrate 1 at least partially overlaps with the orthographic projection of at least one of the pixel-defining structures 31 on the base substrate 1, and the first portion 51 of the first film layer group and the second portion 52 of the first film layer group are separated.

[0063] Continuing with reference to Figure 2, the second film layer group 6 is formed by a second evaporation process. The second evaporation process is performed after the pixel defining structure 31 has completed the reflow process. The second evaporation process completes two-stage evaporation, and the two-stage evaporation includes all other OLED film layers except the first-stage evaporation. The second film layer group 6 includes a first portion 61 and a second portion 62. The orthographic projection of the first portion 61 of the second film layer group on the base substrate at least partially overlaps with the orthographic projection of at least one first electrode pattern 21 on the base substrate 1, and the orthographic projection of the second portion 62 of the second film layer group on the base substrate 1 at least partially overlaps with the orthographic projection of at least one pixel defining structure 31 on the base substrate 1. Since the second film layer group 6 is formed after the reflow process, the pixel defining structure 31 has already formed a rounded shape with an arc top at this time, so the first portion 61 of the second film layer group and the second portion 62 of the second film layer group extend continuously. The second film layer group may include the cathode of the OLED device. Since the second film layer group 6 is continuous, the prepared cathode is also continuous accordingly, which can reduce the voltage of the OLED device and improve the luminous efficiency of the OLED device, which is conducive to achieving high-brightness and high-resolution display of the OLED display panel.

[0064] In some embodiments, referring to FIG. 2 , the pixel defining structure 31 includes a top surface 311 that is away from the base substrate 1 and has a convex arc shape. Therefore, after the reflow process, the surface of the pixel defining structure 31 becomes rounded. Other film layers deposited on the rounded pixel defining structure 31 are less likely to break, facilitating the formation of continuous other OLED organic film layers and a continuous cathode film layer in the subsequent second-stage deposition process. This reduces the voltage of the OLED device, improves the luminous efficiency of the OLED device, and facilitates achieving high-brightness display for the OLED display panel.

[0065] In other embodiments, continuing with FIG. 2 , the first portion 51 of the first film layer group includes an end 511 proximal to the pixel defining structure 31. This end 511 is covered by the pixel defining structure 31 and inserted between the pixel defining structure 31 and the first electrode layer 2. Covering the end 511 of the first portion of the first film layer group with the pixel defining structure 31 not only forms a pixel defining structure 31 with a rounded surface, but also completely disconnects the first portion 51 of the first film layer group from the second portion 52 of the first film layer group. This significantly reduces lateral leakage between pixels, thereby improving the yield and resolution of the display panel.

[0066] In other embodiments, still referring to FIG. 2 , the thickness of the end 511 is less than the thickness of other portions of the first portion 51 of the first film layer group except the end 511 ; and / or, the thickness of the end 511 is less than the thickness of the second portion 52 of the first film layer group.

[0067] In some other embodiments, still referring to FIG. 2 , the orthographic projection of the first portion 51 of the first film layer group on the base substrate 1 partially overlaps with the orthographic projection of the second portion 52 of the first film layer group on the base substrate.

[0068] In other embodiments, continuing with FIG. 2 , a portion of the second film layer group 6 fills the gap 7 between the first portion 51 of the first film layer group and the second portion 52 of the first film layer group. Because the second film layer group 6 primarily comprises organic film layer materials with relatively low electrical conductivity, the second film layer group 6 filling the gap 7 between the first portion 51 of the first film layer group and the second portion 52 of the first film layer group can further reduce the probability of lateral leakage between the first portion 51 of the first film layer group and the second portion 52 of the first film layer group, thereby improving the yield and resolution of the display panel.

[0069] In other embodiments, with continued reference to FIG. 2 , a portion of the second film layer group 6 filling the gap 7 is in direct contact with the top surface 311 of the pixel defining structure 31. Direct contact between the second film layer group 6 and the top surface 311 of the pixel defining structure facilitates the formation of a continuous film layer structure by the second film layer group 6, further ensuring the continuity of the cathode film layer in the second film layer group 6. This can reduce the voltage of the OLED device, improve the luminous efficiency of the OLED device, and facilitate high-brightness display of the OLED display panel.

[0070] In some other embodiments, continuing to refer to Figure 2, the angle a between the tangent surface 81 of the top surface 311 of the pixel defining structure at the first position 8 and the first surface 11 of the base substrate 1 is less than or equal to 60°, wherein the first surface 11 of the base substrate is the surface of the base substrate 1 facing the first electrode layer 2, and the first position 8 is the position where the top surface 311 of the pixel defining structure contacts the first film layer group 5. During the reflow process, the profile of the pixel defining structure 31 after reflow can be controlled by adjusting process parameters such as high temperature treatment, ultraviolet light irradiation, ultraviolet light irradiation and high temperature treatment, ensuring that the angle a of the tangent surface 81 of the top surface 311 of the pixel defining structure at the first position 8 relative to the first surface 11 of the base substrate 1 is less than or equal to 60°, so that the pixel defining structure 31 can not only effectively disconnect the first part 51 of the first film layer group and the second part 52 of the first film layer group, but also facilitate a part of the subsequently prepared second film layer group 6 to fill the gap 7 between the first part 51 of the first film layer group and the second part 52 of the first film layer group, and directly contact the top surface 311 of the pixel defining structure, thereby facilitating the film layer continuity of the second film layer group 6.

[0071] FIG. 3 is a schematic cross-sectional view of a display substrate according to some other exemplary embodiments of the present disclosure, taken along line AA′ in FIG. 1 .

[0072] In this embodiment, with reference to FIG3 , the display substrate includes: a base substrate 1; a first electrode layer 2 disposed on the base substrate 1; a pixel defining layer 3 disposed on the side of the first electrode layer 2 facing away from the base substrate 1; a first film layer group 5 disposed on the side of the pixel defining layer 3 facing away from the base substrate 1; and a second film layer group 6 disposed on the side of the first film layer group 5 facing away from the base substrate 1, wherein the second film layer group 6 includes at least a second electrode layer 9. The second film layer group 6 is formed by a two-stage evaporation process. Before forming the second electrode layer 9, all other OLED functional layers 601, except the first film layer group 5 and the second electrode layer 9, are first evaporated. The functional layer 601 is located between the first film layer group 5 and the second electrode layer 9. Because the functional layer 601 fills the gap between the first portion 51 and the second portion 52 of the first film layer group, forming a continuous functional layer 601, the second electrode layer 9 formed on the functional layer 601 also maintains continuity, thereby reducing the voltage of the OLED device and improving the luminous efficiency of the OLED device, thereby facilitating high-brightness and high-resolution display of the OLED display panel.

[0073] The light-emitting unit in an OLED display panel can be composed of a single-layer OLED device or a tandem OLED device. Single-layer OLED devices have a simpler structure, a more mature manufacturing process, and a higher product yield.

[0074] FIG. 4 is a schematic diagram of a single-layer OLED device structure of a light-emitting unit according to some exemplary embodiments of the present disclosure.

[0075] In this embodiment, with reference to FIG3 and FIG4, the display substrate further includes: a hole injection layer 501 disposed on a side of the first electrode layer 2 away from the base substrate 1; a hole transport layer 502 disposed on a side of the hole injection layer 501 away from the base substrate 1; an electron blocking layer 602 disposed on a side of the hole transport layer 502 away from the base substrate 1; a light-emitting layer 603 disposed on a side of the electron blocking layer 602 away from the base substrate 1; a hole blocking layer 604 disposed on a side of the light-emitting layer 603 away from the base substrate 1; and The hole blocking layer 604 is away from the electron transport layer 605 on the side of the base substrate 1; the electron injection layer 606 is arranged on the side of the electron transport layer 605 away from the base substrate 1; and the second electrode layer 9 is arranged on the side of the electron injection layer 606 away from the base substrate 1, wherein the first film layer group 5 includes a hole injection layer 501 and a hole transport layer 502, and / or the second film layer group 6 includes an electron blocking layer 602, a light-emitting layer 603, a hole blocking layer 604, an electron transport layer 605, an electron injection layer 606 and a second electrode layer 9.

[0076] In this embodiment, since the hole injection layer 501 and the hole transport layer 502 have high electrical conductivity, it is necessary to separate the hole injection layer 501 and the hole transport layer 502 at the pixel defining structure 31. The first film layer group 5 is prepared in a one-stage evaporation, wherein the first film layer group 5 includes the hole injection layer 501 and the hole transport layer 502. The one-stage evaporation is completed before the reflow process is performed on the pixel defining structure 31, so the first film layer group 5 can be better disconnected by the pixel defining structure 31, which can effectively reduce lateral leakage. The conductivity of the electron blocking layer 602, the light-emitting layer 603, the hole blocking layer 604, the electron transport layer 605 and the electron injection layer 606 is relatively low, and even if a continuous film layer is formed, it is not easy to cause lateral current. Therefore, the electron blocking layer 602, the light-emitting layer 603, the hole blocking layer 604, the electron transport layer 605 and the electron injection layer 606 are prepared in a two-stage evaporation. The second stage evaporation is performed after the pixel defining structure 31 is subjected to a reflow process. At this time, the pixel defining structure 31 has formed a relatively rounded contour. Referring to FIG2 , the electron blocking layer 602, the light-emitting layer 603, the hole blocking layer 604, the electron transport layer 605, and the electron injection layer 606 will gradually fill the gap 7 formed by the first film layer group 5 on the surface of the pixel defining structure 31, forming a continuous film layer. Furthermore, the second electrode layer 9 is formed on the side of the electron injection layer 606 away from the base substrate 1. Since the electron blocking layer 602, the light-emitting layer 603, the hole blocking layer 604, the electron transport layer 605, and the electron injection layer 606 below have already formed a continuous film layer, the prepared second electrode layer 9 is also a continuous film layer, thereby reducing the voltage of the OLED device and improving the luminous efficiency of the OLED device, which is conducive to achieving high brightness and high resolution display of the OLED display panel.

[0077] The light-emitting units in an OLED display substrate can also be composed of tandem OLED devices. A tandem OLED device is formed by stacking multiple individual OLED light-emitting structures in series using one or more charge generation layers. A tandem OLED device can contain two, three, or more light-emitting structures. The number of light-emitting structures is closely related to the efficiency and lifespan of the tandem OLED device. Through stacking technology, the efficiency of OLED devices can be further improved, which is beneficial for achieving high-brightness display in OLED display panels and also helps to increase the lifespan of OLED display panels.

[0078] FIG. 5 is a schematic diagram of a double-layer OLED device structure of a light-emitting unit according to some exemplary embodiments of the present disclosure.

[0079] In this embodiment, the display substrate also includes: a first stacked film layer group T1 arranged on the side of the first electrode layer 2 away from the base substrate 1; a charge generation layer CGL arranged on the side of the first stacked film layer group T1 away from the base substrate 1; a second stacked film layer group T2 arranged on the side of the charge generation layer CGL away from the base substrate 1; and a second electrode layer 9 arranged on the side of the second stacked film layer group T2 away from the base substrate 1, wherein the first film layer group 5 includes the first stacked film layer group T1 and the charge generation layer CGL, and / or the second film layer group 6 includes the second stacked film layer group T2 and the second electrode layer 9.

[0080] FIG. 6 is a schematic structural diagram of the first stacked film layer group T1 in FIG. 5 , and FIG. 7 is a schematic structural diagram of the second stacked film layer group T2 in FIG. 5 .

[0081] For example, in combination with Figures 5, 6 and 7, the first stacked film layer group T1 includes: a hole injection layer 501 arranged on the side of the first electrode layer 2 away from the base substrate 1; a hole transport layer 502 arranged on the side of the hole injection layer 501 away from the base substrate 1; an electron blocking layer 602 arranged on the side of the hole transport layer 502 away from the base substrate 1; a light-emitting layer 603 arranged on the side of the electron blocking layer 602 away from the base substrate 1; a hole blocking layer 604 arranged on the side of the light-emitting layer 603 away from the base substrate 1; an electron transport layer 605 arranged on the side of the hole blocking layer 604 away from the base substrate 1; and an electron transport layer 605 arranged on the side of the electron transport layer 605 away from the base substrate 1. The sub-injection layer 606, and / or the second stacked film layer group T2 includes: a hole injection layer 501 arranged on the side of the charge generation layer CGL away from the base substrate 1; a hole transport layer 502 arranged on the side of the hole injection layer 501 away from the base substrate 1; an electron blocking layer 602 arranged on the side of the hole transport layer 502 away from the base substrate 1; a light-emitting layer 603 arranged on the side of the electron blocking layer 602 away from the base substrate 1; a hole blocking layer 604 arranged on the side of the light-emitting layer 603 away from the base substrate 1; an electron transport layer 605 arranged on the side of the hole blocking layer 604 away from the base substrate 1; and an electron injection layer 606 arranged on the side of the electron transport layer 605 away from the base substrate 1.

[0082] On the one hand, through the preparation of the double-layer structure, the luminous efficiency of the double-layer OLED device is greatly improved compared to the luminous efficiency of the single-layer OLED device, and a higher brightness per unit area can be obtained, which is conducive to the realization of high-brightness display of the OLED display panel. On the other hand, the first film layer group 5 includes a first stacked film layer group T1 and a charge generation layer CGL. The first stacked film layer group T1 and the charge generation layer CGL are separated by the pixel defining structure, which can effectively reduce the lateral leakage between the pixel units. The second film layer group 6 includes a second stacked film layer group T2 and a second electrode layer 9. The second film layer group 6 is prepared after the pixel defining structure 31 performs the reflow process, which can ensure the film continuity of the second electrode layer 9, thereby reducing the voltage of the OLED device and improving the luminous efficiency of the OLED device, which is conducive to the realization of high-brightness and high-resolution display of the OLED display panel.

[0083] FIG8 is a schematic structural diagram of a three-layer OLED device in a light-emitting unit according to some exemplary embodiments of the present disclosure; FIG9 is a schematic structural diagram of a third stacked film layer group in the three-layer OLED device in FIG8 .

[0084] In this embodiment, the display substrate also includes: a first stacked film layer group T1 arranged on the side of the first electrode layer 2 away from the base substrate 1; a first charge generation layer CGL1 arranged on the side of the first stacked film layer group T1 away from the base substrate 1; a second stacked film layer group T2 arranged on the side of the first charge generation layer CGL1 away from the base substrate 1; a second charge generation layer CGL2 arranged on the side of the second stacked film layer group T2 away from the base substrate 1; a third stacked film layer group T3 arranged on the side of the second charge generation layer CGL2 away from the base substrate 1; and a second electrode layer 9 arranged on the side of the third stacked film layer group T3 away from the base substrate 1, wherein the first film layer group 5 includes the first stacked film layer group T1, the first charge generation layer CGL1, the second stacked film layer group T2 and the second charge generation layer CGL2, and / or the second film layer group 6 includes the third stacked film layer group T3 and the second electrode layer 9.

[0085] For example, with reference to Figures 6, 7, 8 and 9, the first stacked film layer group T1 includes: a hole injection layer 501 arranged on the side of the first electrode layer 2 away from the base substrate 1; a hole transport layer 502 arranged on the side of the hole injection layer 501 away from the base substrate 1; an electron blocking layer 602 arranged on the side of the hole transport layer 502 away from the base substrate 1; a light-emitting layer 603 arranged on the side of the electron blocking layer 602 away from the base substrate 1; and a hole injection layer 501 arranged on the side of the first electrode layer 2 away from the base substrate 1. a hole blocking layer 604; an electron transport layer 605 disposed on the side of the hole blocking layer 604 away from the substrate 1; and an electron injection layer 606 disposed on the side of the electron transport layer 605 away from the substrate 1, and / or the second stacked film layer group T2 includes: a hole injection layer 501 disposed on the side of the charge generation layer CGL1 away from the substrate 1; a hole transport layer 502 disposed on the side of the hole injection layer 501 away from the substrate 1; an electron blocking layer disposed on the side of the hole transport layer 502 away from the substrate 1 602; a light-emitting layer 603 arranged on the side of the electron blocking layer 602 away from the substrate 1; a hole blocking layer 604 arranged on the side of the light-emitting layer 603 away from the substrate 1; an electron transport layer 605 arranged on the side of the hole blocking layer 604 away from the substrate 1; and an electron injection layer 606 arranged on the side of the electron transport layer 605 away from the substrate 1, and / or, the second stacked film layer group T3 includes: a hole injection layer 501 arranged on the side of the charge generation layer CGL2 away from the substrate 1; The hole injection layer 501 is away from the hole transport layer 502 on the side of the base substrate 1; the electron blocking layer 602 is arranged on the side of the hole transport layer 502 away from the base substrate 1; the light-emitting layer 603 is arranged on the side of the electron blocking layer 602 away from the base substrate 1; the hole blocking layer 604 is arranged on the side of the light-emitting layer 603 away from the base substrate 1; the electron transport layer 605 is arranged on the side of the hole blocking layer 604 away from the base substrate 1; and the electron injection layer 606 is arranged on the side of the electron transport layer 605 away from the base substrate 1.

[0086] Compared to single-layer and double-layer OLED devices, three-layer OLED devices are more efficient and can provide higher display brightness. Furthermore, the first film layer group 5 includes a first stacked film layer group T1, a first charge generation layer CGL1, a second stacked film layer group T2, and a second charge generation layer CGL2. The first film layer group 5 is isolated by the pixel defining structure 31, effectively reducing lateral leakage between pixel units. The second film layer group 6 includes a second stacked film layer group T3 and a second electrode layer 9. The second film layer group 6 is prepared after the pixel defining structure 31 undergoes a reflow process, ensuring the film continuity of the second electrode layer 9. This reduces the voltage of the OLED device and improves the luminous efficiency of the OLED device, facilitating high-brightness and high-resolution display of the OLED display panel.

[0087] It should be noted that the first film layer stacking group T1, the second film layer stacking group T2 and the third film layer stacking group T3 are only schematic illustrations of the structures of each film layer stacking group. The film layer thickness, doping concentration, material type, etc. of the first film layer stacking group T1, the second film layer stacking group T2 and the third film layer stacking group T3 are not exactly the same, and can be specifically designed according to actual needs. The different film layer stacking groups in the present disclosure can adopt various design methods known in the art, and the embodiments of the present disclosure are not particularly limited.

[0088] In the embodiments of the present disclosure, only the embodiments of a single-layer OLED device, a double-layer OLED device and a triple-layer OLED device are schematically described. In fact, the design in the embodiments of the present disclosure is also applicable to OLED devices with four or more layers.

[0089] Exemplarily, in some embodiments, referring to FIG. 2 , the pixel defining layer 3 includes a photoresist material.

[0090] For example, in some embodiments, referring to FIG. 2 , the photoresist material has a softening reflow characteristic, and the softening temperature of the photoresist material is lower than the glass transition temperature of each film layer in the first film layer group 5 and the second film layer group 6. By selecting a photoresist material with a lower softening temperature, the softening temperature of the photoresist material is ensured to be lower than the glass transition temperature of all organic materials in the light-emitting device, thereby ensuring that the reflow process is completed at a lower temperature, avoiding changes in the film quality of the evaporated organic material during the reflow process, and preventing the efficiency of the light-emitting unit from being reduced due to changes in the film quality of the evaporated organic material, thereby affecting the display effect of the display panel.

[0091] Figure 10A is a partial cross-sectional schematic diagram of a display substrate according to some other exemplary embodiments of the present disclosure; Figure 10B is a partial cross-sectional schematic diagram of a display substrate according to some other exemplary embodiments of the present disclosure, in which a color film layer is shown; Figure 10C is a partial cross-sectional schematic diagram of a display substrate according to some other exemplary embodiments of the present disclosure, in which a first sub-pixel defining layer and a second sub-pixel defining layer are shown.

[0092] For example, in some embodiments, referring to FIG. 10A , the display substrate further includes an encapsulation layer 20 disposed on a side of the second electrode layer 9 distal from the base substrate 1; and a plurality of microlenses 30 disposed on a side of the encapsulation layer 20 distal from the base substrate 1. The orthographic projections of the plurality of microlenses 30 on the base substrate 1 are respectively located within the orthographic projections of the pixel openings 4 on the base substrate 1. By providing the plurality of microlenses 30, the light extraction efficiency of the OLED light-emitting unit can be increased, allowing more photons to be emitted outside the display panel, thereby achieving high-brightness display of the display panel.

[0093] Exemplarily, in some embodiments, referring to FIG. 10A , the material of the plurality of microlenses 30 is the same as the material of at least a portion of the pixel defining layer 3 .

[0094] For example, in some embodiments, referring to FIG. 10A , a curvature of at least one of the microlenses 30 is smaller than a curvature of the pixel defining structure 31 .

[0095] For example, in some embodiments, referring to FIG. 10B , the display substrate may further include a plurality of color filter layers 40 disposed on a side of the encapsulation layer 20 away from the base substrate 1; a planarization layer 50 disposed on a side of the color filter layer 40 away from the base substrate 1; and a plurality of microlenses 30 disposed on a side of the planarization layer 50 away from the base substrate 1. The orthographic projections of the plurality of microlenses 30 and the adjacent pixel defining structures 31 on the base substrate 1 have a first overlapping portion M1, with a width D5 in the first direction of the first overlapping portion M1. The plurality of adjacent color filter layers 40 may overlap in edge regions, with the overlapping regions of the adjacent color filter layers 40 serving as a black matrix. The orthographic projections of the plurality of adjacent color filter layers 40 on the base substrate 1 have a second overlapping portion M2, with a width D6 in the first direction of the second overlapping portion M2.

[0096] On the one hand, the pixel-defining layer 3 focuses stray light onto the black matrix. Because the curvature of the microlenses 30 is smaller than that of the pixel-defining structure 31, the black matrix can reduce optical crosstalk between pixels. On the other hand, the width D5 of the first overlapping portion M1 formed by the orthographic projection of adjacent microlenses 30 and pixel-defining structures 31 onto the base substrate 1 is greater than the width D6 of the second overlapping portion M2 formed by the overlapping of the corresponding adjacent color filter layers 40. This allows for the collection of more effective light from the luminous area, thereby improving the brightness of the display substrate.

[0097] For example, the pixel defining layer 3 may include a light absorbing material, so that stray light between pixels can be controlled.

[0098] For example, in some embodiments, referring to FIG10C , the pixel defining layer may further include a first sub-pixel defining layer 301 and a second sub-pixel defining layer 302. The second sub-pixel defining layer 302 is located on the side of the first sub-pixel defining layer 301 away from the base substrate 1, and the orthographic projection of the second sub-pixel defining layer 302 on the base substrate 1 at least partially overlaps with the orthographic projection of the first sub-pixel defining layer 301 on the base substrate 1; the first sub-pixel defining layer 301 includes a photoresist material, and the second sub-pixel defining layer 302 includes an inorganic material. That is, in this embodiment, the pixel defining layer includes an organic layer and an inorganic layer, and the inorganic layer covers the organic layer. In the actual preparation process, the organic layer and the inorganic layer of the pixel defining layer can be produced before the deposition of the light-emitting functional layer. For example, the organic layer and the inorganic layer of the pixel defining layer can be produced by the same patterning process. In this way, the inorganic layer covering the organic layer can prevent water, oxygen, etc. from affecting the performance of the subsequently formed light-emitting element.

[0099] Some exemplary embodiments of the present disclosure further provide a display device, which includes any of the display substrates described above.

[0100] 11A-11F illustrate a method for manufacturing a display panel according to an exemplary embodiment of the present disclosure. As shown in FIG11A-11F , the method may include steps S01-S05.

[0101] It should be noted that some steps of the above manufacturing method can be performed individually or in combination, and can be performed in parallel or sequentially, and are not limited to the specific operation sequence shown in the figures.

[0102] In step S01, with reference to Figures 1, 2, 11A and 11B, a first electrode material layer is formed on a base substrate 1, and a patterning process is performed on the first electrode material layer to form a first electrode layer 2 including a plurality of first electrode patterns 21, wherein the plurality of first electrode patterns 21 are arranged in an array on the base substrate 1 along a first direction D1 and a second direction D2, and the plurality of first electrode patterns 21 are spaced apart from each other along the first direction D1 and the second direction D2.

[0103] In step S02, with reference to Figures 1, 2 and 11C, a pixel defining material layer is formed on the side of the first electrode layer 2 away from the base substrate 1, and a patterning process is performed on the pixel defining material layer to form a pixel defining layer 3 including a plurality of pixel defining structures 31, wherein the plurality of pixel defining structures 31 are arranged in an array on the base substrate 1 along a first direction D1 and a second direction D2, and the plurality of pixel defining structures 31 define a plurality of pixel openings 4, and the plurality of pixel openings 4 respectively expose a portion of the plurality of first electrode patterns 21.

[0104] In step S03 , referring to FIG. 2 and FIG. 11D , a first film layer group 5 is formed on a side of the pixel defining layer 3 away from the base substrate 1 by a first evaporation process, wherein the first film layer group 5 includes at least one film layer.

[0105] In step S04 , referring to FIG. 2 and FIG. 11E , a reflow process is performed on the base substrate on which the pixel defining layer 3 and the first film layer group 5 are formed, so that the outline of the pixel defining structure 31 becomes rounded.

[0106] In step S05, referring to FIG2 and FIG11F, a second film layer group 6 is formed on the side of the first film layer group 5 away from the base substrate 1 by a second evaporation process, wherein the second film layer group 6 includes at least one film layer; referring to FIG2 again, wherein the first film layer group 5 includes a first portion 51 and a second portion 52, the orthographic projection of the first portion 51 of the first film layer group on the base substrate 1 at least partially overlaps with the orthographic projection of at least one of the first electrode patterns 21 on the base substrate 1, and the orthographic projection of the second portion 52 of the first film layer group on the base substrate 1 overlaps with the orthographic projection of at least one of the pixel defining structures 31 on the base substrate 1. The orthographic projections at least partially overlap, and the first part 51 of the first film layer group and the second part 52 of the first film layer group are disconnected; and the second film layer group 6 includes a first part 61 and a second part 62, the orthographic projection of the first part 61 of the second film layer group on the base substrate 1 at least partially overlaps with the orthographic projection of at least one of the first electrode patterns 21 on the base substrate 1, and the orthographic projection of the second part 62 of the second film layer group on the base substrate 1 at least partially overlaps with the orthographic projection of at least one of the pixel defining structures 31 on the base substrate 1, and the first part 61 of the second film layer group and the second part 62 of the second film layer group extend continuously.

[0107] FIG. 12 is a flow chart of manufacturing a pixel defining structure on a display substrate according to some exemplary embodiments of the present disclosure, wherein the flow includes S021 - S022 .

[0108] For example, in some embodiments, in combination with FIG11C and FIG12 , a pixel defining material layer is formed on the side of the first electrode layer 2 away from the base substrate 1, and a patterning process is performed on the pixel defining material layer to form a pixel defining layer 3 including a plurality of pixel defining structures 31, specifically including: in step S021, a photoresist material is coated on the side of the first electrode layer 2 away from the base substrate 1; in step S022, an exposure and development process is performed on the photoresist material to form a plurality of pixel defining structures 31.

[0109] For example, in some embodiments, the photoresist material has a softening reflow characteristic, and the softening temperature of the photoresist is lower than the glass transition temperature of each organic film layer in the first film layer group 5 and the second film layer group 6 .

[0110] Exemplarily, in some embodiments, the method further includes: before the first evaporation process, performing a baking process on the base substrate on which the pixel defining layer is formed, and the softening temperature of the photoresist material is higher than the baking temperature in the baking process.

[0111] FIG. 13 is a partial cross-sectional view of a display substrate before a reflow process is performed according to some exemplary embodiments of the present disclosure.

[0112] Exemplarily, in some embodiments, referring to Figure 13, before the reflow process, the angle b of the top surface of the pixel defining structure 31 at the second position 15 relative to the first surface of the substrate substrate 1 is greater than or equal to 85°, wherein the first surface 11 of the substrate substrate is the surface of the substrate substrate 1 facing the first electrode layer 2, and the second position 15 is the position where the top surface of the pixel defining structure 31 contacts the first electrode layer 2; and / or, after the reflow process, in combination with Figure 2, the angle b of the tangent surface 81 of the top surface 311 of the pixel defining structure 31 at the first position 8 relative to the first surface 11 of the substrate substrate 1 is less than or equal to 60°, wherein the first surface 11 of the substrate substrate 1 is the surface of the substrate substrate 1 facing the first electrode layer 2, and the first position 8 is the position where the top surface 311 of the pixel defining structure 31 contacts the first film layer group 5.

[0113] By adding a reflow process between the two evaporation processes, not only is the first film layer group 5 completely isolated during the first evaporation step, but the pixel-defining structure 31 formed after the reflow process also has a smooth, rounded contour, ensuring the continuity of the second film layer group 6 during the second evaporation step. In some exemplary embodiments, the second film layer group 6 includes a second electrode layer 9, and thus, the second electrode layer 9 also has film continuity. This reduces the voltage of the OLED device, improves the luminous efficiency of the OLED device, and facilitates the realization of high-brightness display of the OLED display panel.

[0114] Although some embodiments of the present general inventive concept have been shown and described, it will be appreciated by those skilled in the art that changes may be made to these embodiments without departing from the principles and spirit of the present general inventive concept, the scope of which is defined in the claims and their equivalents.

Claims

1. A display substrate, wherein: The display substrate comprises: substrate substrate; A first electrode layer disposed on the base substrate, wherein the first electrode layer comprises a plurality of first electrode patterns, the plurality of first electrode patterns are disposed on the base substrate in an array along a first direction and a second direction, and the plurality of first electrode patterns are spaced apart from each other along the first direction and the second direction; A pixel defining layer disposed on a side of the first electrode layer away from the base substrate, wherein the pixel defining layer comprises a plurality of pixel defining structures, the plurality of pixel defining structures are disposed in an array on the base substrate along a first direction and a second direction, the plurality of pixel defining structures define a plurality of pixel openings, and the plurality of pixel openings respectively expose a portion of the plurality of first electrode patterns; A first film layer group disposed on a side of the pixel defining layer away from the base substrate, wherein the first film layer group includes at least one film layer; and a second film layer group disposed on a side of the first film layer group away from the base substrate, wherein the second film layer group includes at least one film layer, The first film layer group includes a first portion and a second portion, the orthographic projection of the first portion of the first film layer group on the base substrate at least partially overlaps with the orthographic projection of at least one of the first electrode patterns on the base substrate, the orthographic projection of the second portion of the first film layer group on the base substrate at least partially overlaps with the orthographic projection of at least one of the pixel defining structures on the base substrate, and the first portion of the first film layer group and the second portion of the first film layer group are disconnected; and The second film layer group includes a first part and a second part, wherein the orthographic projection of the first part of the second film layer group on the base substrate at least partially overlaps with the orthographic projection of at least one of the first electrode patterns on the base substrate, and the orthographic projection of the second part of the second film layer group on the base substrate at least partially overlaps with the orthographic projection of at least one of the pixel defining structures on the base substrate, and the first part of the second film layer group and the second part of the second film layer group extend continuously.

2. The display substrate according to claim 1, wherein: The pixel defining structure includes a top surface away from the base substrate, and the top surface has a convex arc shape.

3. The display substrate according to claim 1 or 2, wherein: The first portion of the first film layer group includes an end close to the pixel defining structure, the end is covered by the pixel defining structure, and the end is inserted between the pixel defining structure and the first electrode layer.

4. The display substrate according to claim 3, wherein: The thickness of the end is smaller than the thickness of other parts of the first part of the first film layer group except the end; and / or, The end has a thickness less than a thickness of the second portion of the first film layer group.

5. The display substrate according to any one of claims 1 to 4, wherein: An orthographic projection of a first portion of the first film layer group on the base substrate partially overlaps with an orthographic projection of a second portion of the first film layer group on the base substrate.

6. The display substrate according to any one of claims 1 to 5, wherein: A portion of the second film layer group fills a gap between a first portion of the first film layer group and a second portion of the first film layer group.

7. The display substrate according to claim 6, wherein: A portion of the second film layer group filling the gap is in direct contact with a top surface of the pixel defining structure.

8. The display substrate according to any one of claims 1 to 7, wherein: The angle between the tangent plane of the top surface of the pixel defining structure at the first position and the first surface of the base substrate is less than or equal to 60°, wherein the first surface of the base substrate is the surface of the base substrate facing the first electrode layer, and the first position is the position where the top surface of the pixel defining structure contacts the first film layer group.

9. The display substrate according to any one of claims 1 to 8, wherein: The display substrate includes a second electrode layer disposed on a side of the first film layer group away from the base substrate, and the second film layer group includes at least the second electrode layer.

10. The display substrate according to any one of claims 1 to 8, wherein: The display substrate further comprises: A hole injection layer disposed on a side of the first electrode layer away from the base substrate; A hole transport layer disposed on a side of the hole injection layer away from the substrate; An electron blocking layer disposed on a side of the hole transport layer away from the substrate; A light-emitting layer disposed on a side of the electron blocking layer away from the substrate; A hole blocking layer disposed on a side of the light-emitting layer away from the base substrate; An electron transport layer disposed on a side of the hole blocking layer away from the substrate; An electron injection layer disposed on a side of the electron transport layer away from the substrate; and A second electrode layer is disposed on a side of the electron injection layer away from the substrate. The first film layer group includes a hole injection layer and a hole transport layer, and / or the second film layer group includes an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer and a second electrode layer.

11. The display substrate according to any one of claims 1 to 8, wherein: The display substrate further comprises: A first stacked film layer group disposed on a side of the first electrode layer away from the base substrate; A charge generation layer disposed on a side of the first stacked film layer group away from the substrate; A second stacked film layer group disposed on a side of the charge generation layer away from the substrate; and A second electrode layer is disposed on a side of the second stacked film layer group away from the base substrate, Wherein, the first film layer group includes a first stacked film layer group and a charge generation layer, and / or the second film layer group includes a second stacked film layer group and a second electrode layer.

12. The display substrate according to claim 11, wherein: The first stacked film layer group comprises: A hole injection layer disposed on a side of the first electrode layer away from the base substrate; A hole transport layer disposed on a side of the hole injection layer away from the substrate; An electron blocking layer disposed on a side of the hole transport layer away from the substrate; A light-emitting layer disposed on a side of the electron blocking layer away from the substrate; A hole blocking layer disposed on a side of the light-emitting layer away from the base substrate; An electron transport layer disposed on a side of the hole blocking layer away from the substrate; and an electron injection layer disposed on a side of the electron transport layer away from the substrate, and / or The second stacked film layer group comprises: A hole injection layer disposed on a side of the charge generation layer away from the substrate; A hole transport layer disposed on a side of the hole injection layer away from the substrate; An electron blocking layer disposed on a side of the hole transport layer away from the substrate; A light-emitting layer disposed on a side of the electron blocking layer away from the substrate; A hole blocking layer disposed on a side of the light-emitting layer away from the base substrate; An electron transport layer disposed on a side of the hole blocking layer away from the substrate; and The electron injection layer is arranged on a side of the electron transport layer away from the base substrate.

13. The display substrate according to any one of claims 1 to 8, wherein: The display substrate further comprises: A first stacked film layer group disposed on a side of the first electrode layer away from the base substrate; A first charge generation layer disposed on a side of the first stacked film layer group away from the substrate; A second stacked film layer group is disposed on a side of the first charge generation layer away from the substrate; A second charge generation layer disposed on a side of the second stacked film layer group away from the substrate; A third stacked film layer group is disposed on a side of the second charge generation layer away from the substrate; and A second electrode layer is disposed on a side of the third stacked film layer group away from the substrate, The first film layer group includes a first stacked film layer group, a first charge generation layer, a second stacked film layer group and a second charge generation layer, and / or the second film layer group includes a third stacked film layer group and a second electrode layer.

14. The display substrate according to claim 13, wherein: The first stacked film layer group comprises: A hole injection layer disposed on a side of the first electrode layer away from the base substrate; A hole transport layer disposed on a side of the hole injection layer away from the substrate; An electron blocking layer disposed on a side of the hole transport layer away from the substrate; A light-emitting layer disposed on a side of the electron blocking layer away from the substrate; A hole blocking layer disposed on a side of the light-emitting layer away from the base substrate; An electron transport layer disposed on a side of the hole blocking layer away from the substrate; and an electron injection layer disposed on a side of the electron transport layer away from the substrate, and / or The second stacked film layer group comprises: A hole injection layer disposed on a side of the first charge generation layer away from the substrate; A hole transport layer disposed on a side of the hole injection layer away from the substrate; An electron blocking layer disposed on a side of the hole transport layer away from the substrate; A light-emitting layer disposed on a side of the electron blocking layer away from the substrate; A hole blocking layer disposed on a side of the light-emitting layer away from the base substrate; An electron transport layer disposed on a side of the hole blocking layer away from the substrate; and an electron injection layer disposed on a side of the electron transport layer away from the substrate, and / or The third stacked film layer group comprises: A hole injection layer disposed on a side of the second charge generation layer away from the base substrate; A hole transport layer disposed on a side of the hole injection layer away from the substrate; An electron blocking layer disposed on a side of the hole transport layer away from the substrate; A light-emitting layer disposed on a side of the electron blocking layer away from the substrate; A hole blocking layer disposed on a side of the light-emitting layer away from the base substrate; An electron transport layer disposed on a side of the hole blocking layer away from the substrate; and The electron injection layer is arranged on a side of the electron transport layer away from the base substrate.

15. The display substrate according to any one of claims 1 to 14, wherein: The pixel defining layer includes a photoresist material.

16. The display substrate according to claim 15, wherein: The photoresist material has a softening reflow characteristic, and the softening temperature of the photoresist material is lower than the glass transition temperature of each film layer in the first film layer group and the second film layer group.

17. The display substrate according to any one of claims 1 to 16, wherein: The display substrate further comprises: a plurality of micro lenses disposed on a side of the second electrode layer away from the base substrate; and The orthographic projections of the plurality of microlenses on the base substrate are respectively located within the orthographic projections of the plurality of pixel openings on the base substrate.

18. The display substrate according to claim 17, wherein: The material of the plurality of micro lenses is the same as that of at least a portion of the pixel defining layer.

19. The display substrate according to claim 17 or 18, wherein: The curvature of at least one of the microlenses is smaller than the curvature of the pixel defining structure.

20. The display substrate according to any one of claims 17 to 19, wherein: The display substrate further includes a plurality of color filter layers, wherein the plurality of color filter layers are located between the pixel defining layer and the layer where the plurality of micro lenses are located; and The orthographic projections of the adjacent microlenses and the pixel defining structures on the substrate have a first overlapping portion, and the orthographic projections of any two adjacent color filter layers on the substrate have a second overlapping portion. A width of an overlapping portion in the first direction is greater than a width of the second overlapping portion in the first direction.

21. The display substrate according to any one of claims 1 to 20, wherein: The pixel defining layer comprises a first sub-pixel defining layer and a second sub-pixel defining layer, wherein the second sub-pixel defining layer is located on a side of the first sub-pixel defining layer away from the base substrate, and an orthographic projection of the second sub-pixel defining layer on the base substrate at least partially overlaps with an orthographic projection of the first sub-pixel defining layer on the base substrate; as well as The first sub-pixel defining layer includes a photoresist material, and the second sub-pixel defining layer includes an inorganic material.

22. A display device, wherein: The display device comprises the display substrate according to any one of claims 1 to 21.

23. A method for preparing a display substrate, wherein: The method comprises: Forming a first electrode material layer on a base substrate, and performing a patterning process on the first electrode material layer to form a first electrode layer including a plurality of first electrode patterns, wherein the plurality of first electrode patterns are arranged in an array on the base substrate along a first direction and a second direction, and the plurality of first electrode patterns are arranged spaced apart from each other along the first direction and the second direction; forming a pixel defining material layer on a side of the first electrode layer away from the base substrate, and performing a patterning process on the pixel defining material layer to form a pixel defining layer including a plurality of pixel defining structures, wherein the plurality of pixel defining structures are arranged in an array on the base substrate along a first direction and a second direction, and the plurality of pixel defining structures define a plurality of pixel openings, and the plurality of pixel openings respectively expose a portion of the plurality of first electrode patterns; Forming a first film layer group on a side of the pixel defining layer away from the base substrate by a first evaporation process, wherein the first film layer group includes at least one film layer; performing a reflow process on the base substrate on which the pixel defining layer and the first film layer group are formed; and forming a second film layer group on a side of the first film layer group away from the base substrate by a second evaporation process, wherein the second film layer group includes at least one film layer, The first film layer group includes a first part and a second part, the orthographic projection of the first part of the first film layer group on the base substrate at least partially overlaps with the orthographic projection of at least one of the first electrode patterns on the base substrate, the orthographic projection of the second part of the first film layer group on the base substrate at least partially overlaps with the orthographic projection of at least one of the pixel defining structures on the base substrate, and the first part of the first film layer group and disconnected from the second portion of the first film layer group; and The second film layer group includes a first part and a second part, wherein the orthographic projection of the first part of the second film layer group on the base substrate at least partially overlaps with the orthographic projection of at least one of the first electrode patterns on the base substrate, and the orthographic projection of the second part of the second film layer group on the base substrate at least partially overlaps with the orthographic projection of at least one of the pixel defining structures on the base substrate, and the first part of the second film layer group and the second part of the second film layer group extend continuously.

24. The method of claim 23, wherein: A pixel defining material layer is formed on a side of the first electrode layer away from the base substrate, and a patterning process is performed on the pixel defining material layer to form a pixel defining layer including a plurality of pixel defining structures, specifically comprising: Coating a photoresist material on a side of the first electrode layer away from the substrate; and Exposure and development processes are performed on the photoresist material to form a plurality of pixel defining structures.

25. The method of claim 24, wherein: The photoresist material has a softening reflow characteristic, and the softening temperature of the photoresist material is lower than the glass transition temperature of each film layer in the first film layer group and the second film layer group.

26. The method of claim 24 or 25, wherein: The method further comprises: before the first evaporation process, performing a baking process on the base substrate on which the pixel defining layer is formed, The softening temperature of the photoresist material is higher than the baking temperature in the baking process.

27. The method of any one of claims 23 to 26, wherein: Before the reflow process, the angle between the top surface of the pixel defining structure and the first surface of the base substrate at a second position is greater than or equal to 85°, wherein the first surface of the base substrate is a surface of the base substrate facing the first electrode layer, and the second position is a position where the top surface of the pixel defining structure contacts the first electrode layer; and / or, After the reflow process, the angle between the tangent plane of the top surface of the pixel defining structure at the first position and the first surface of the substrate is less than or equal to 60°, wherein the first surface of the substrate is the surface of the substrate facing the first electrode layer, and the first position is the position where the top surface of the pixel defining structure contacts the first film layer group.