Light-emitting device and display device

Abstract

Provided is an organic semiconductor device having high definition and good reliability. Provided is a light-emitting device comprising one of a plurality of light-emitting devices formed on an insulating layer, in which the concentration of an oxygen adduct of a first substance is 15 ppm or more when a film having the same composition as a light-emitting layer containing the first substance and the light-emitting substance is irradiated with daylight LED light at an illuminance of 300 lux for 60 minutes in an air atmosphere, and the concentration of an oxygen adduct of the first substance is 15 ppm or more when the film is irradiated with daylight LED light at an illuminance of 300 lux. The interval between the first electrodes included in adjacent light emitting devices is 2 [mu] m or more and 5 [mu] m or less.

Description

Technical Field

[0001] One embodiment of the present invention relates to a light-emitting device.

[0002] Note that one embodiment of the present invention is not limited to the above-mentioned technical field. As an example of the technical field of one embodiment of the present invention, a semiconductor device, a display device, a light-emitting device, a power storage device, a storage device, an electronic device, a lighting device, an input device (e.g., a touch sensor), an input-output device (e.g., a touch panel), and a driving method or a manufacturing method of the above-mentioned device can be cited. Background Art

[0003] In recent years, display devices are expected to be used in various applications. For example, large display devices can be used in home television devices (also called televisions or television receivers), digital signage, and public information displays (PID). In addition, as portable information terminals, research and development of smartphones and tablet terminals equipped with touch panels is underway.

[0004] At the same time, there is a demand for higher-definition display devices. Devices that require high-definition display devices include those for virtual reality (VR), augmented reality (AR), alternative reality (SR), and mixed reality (MR).

[0005] As display devices, light-emitting devices including light-emitting devices (also called light-emitting elements) using organic compounds are being developed. Light-emitting devices using the electroluminescence (hereinafter referred to as EL) phenomenon (also called "organic EL devices" or "organic EL elements") have the characteristics of being easy to achieve thinness and lightness, being able to respond to input signals at high speed, and being able to be driven using a DC constant voltage power supply, etc., and have been applied to display devices.

[0006] In order to obtain a higher-definition light-emitting device using a light-emitting device, a technique for patterning an organic layer using photolithography using a photoresist or the like instead of a vapor deposition method using a metal mask has been studied. By using photolithography, a high-definition display device with an EL layer having a spacing of several μm can be obtained (for example, see Patent Document 1). [Prior technical literature] [Patent Document]

[0007] [Patent Document 1] Japanese PCT International Application Translation No. 2018-521459 Summary of the invention Technical problem to be solved by the invention

[0008] In order to ensure reliability, light-emitting devices are often formed in a manner that does not expose the light to the atmosphere during the evaporation of different layers and maintains a high vacuum state (continuous vacuum). However, it is difficult to maintain a high vacuum state in the process of processing by photolithography as described above. Therefore, in many cases, the reliability of light-emitting devices manufactured by photolithography is lower than that of light-emitting devices formed by continuous vacuum.

[0009] Therefore, one object of one embodiment of the present invention is to provide a light-emitting device that uses an organic compound and is formed by photolithography and has good reliability. Another object of one embodiment of the present invention is to provide a light-emitting device that can provide a high-definition and reliable light-emitting device.

[0010] Another object of one embodiment of the present invention is to provide a light emitting device that can be arranged at high density and has good reliability. Another object of one embodiment of the present invention is to provide a light emitting device that can provide a high-definition display device and has good reliability.

[0011] In addition, one of the purposes of one embodiment of the present invention is to provide a display device with high display performance. In addition, one of the purposes of one embodiment of the present invention is to provide a display device with high resolution and good display performance. In addition, one of the purposes of one embodiment of the present invention is to provide a display device with high display quality and good display performance.

[0012] Another object of one embodiment of the present invention is to provide a novel display device, a novel display module, and a novel electronic device.

[0013] Note that the description of these objectives does not prevent the existence of other objectives. One embodiment of the present invention does not need to achieve all of the above objectives. Objectives other than the above objectives can be extracted from the description of the specification, drawings, and claims. Solutions to technical problems

[0014] Therefore, one embodiment of the present invention provides a light-emitting device as follows: in a light-emitting device manufactured by photolithography, when a film containing a host material and a luminescent center substance is irradiated with light having an intensity of 10% or more of the maximum peak intensity at a wavelength below 475 nm in an atmospheric atmosphere, no oxygen addition product is generated.

[0015] In addition, one embodiment of the present invention provides a light-emitting device as follows: in a light-emitting device manufactured by photolithography, the concentration of oxygen adducts of the main material in a thin film sample in which a film containing a main material and a luminescent center substance is irradiated with daylight color LED light at an illumination of 300 lux for 60 minutes in an atmospheric atmosphere is greater than 15 ppm.

[0016] That is, one embodiment of the present invention is a light-emitting device that is one of a plurality of light-emitting devices included in a light-emitting device group consisting of a first electrode group formed on the same insulating surface, a second electrode opposite to the first electrode group, and a first layer group located between the first electrode group and the second electrode, the light-emitting device comprising: a first electrode of one of the first electrode groups; the second electrode; and a first layer of one of the first layer groups, wherein the first electrode group is composed of a plurality of first electrodes that are independently independent of each other in the plurality of light-emitting devices, the first layer group is composed of a plurality of first layers that are independently independent of each other in the plurality of light-emitting devices, and the first layer group is composed of a plurality of first layers that are independently independent of each other in the plurality of light-emitting devices, and the first layer group is composed of a plurality of first layers that are independently independent of each other in the plurality of light-emitting devices, and the first electrode group is composed of a plurality of first electrodes ... The second electrode is a continuous conductive layer commonly used by the plurality of light-emitting devices, the second electrode and the first layer overlap with the first electrode, the first layer includes a light-emitting layer containing a light-emitting center substance and a first substance, the first substance is a substance that generates an oxygen adduct of the first substance in the film when a film having the same composition as the light-emitting layer is irradiated with light having an intensity of 10% or more of the maximum peak intensity at a wavelength below 475 nm in an atmospheric atmosphere, and the first layer included in the light-emitting device and the first layer included in other light-emitting devices adjacent to the light-emitting device are spaced from 2 μm to 5 μm.

[0017] Another embodiment of the present invention is a light-emitting device which is one of a plurality of light-emitting devices included in a light-emitting device group consisting of a first electrode group formed on the same insulating surface, a second electrode opposite to the first electrode group, and a first layer group located between the first electrode group and the second electrode, the light-emitting device comprising: a first electrode of one of the first electrode groups; the second electrode; and a first layer of one of the first layer groups, wherein the first electrode group is composed of a plurality of first electrodes independently of each other in the plurality of light-emitting devices, the first layer group is composed of a plurality of first layers independently of each other in the plurality of light-emitting devices, and the second The electrode is a continuous conductive layer commonly used by the multiple light-emitting devices, the second electrode and the first layer overlap with the first electrode, the first layer includes a light-emitting layer containing a luminescent center substance and a first substance, the first substance is a substance in which the concentration of oxygen adducts of the first substance in the film is greater than 15 ppm when a film having the same composition as the light-emitting layer is irradiated with daylight color LED light at an illumination of 300 lux for 60 minutes in an atmospheric atmosphere, and the interval between the first layer included in the light-emitting device and the first layer included in other light-emitting devices adjacent to the light-emitting device is greater than 2 μm and less than 5 μm.

[0018] Another embodiment of the present invention is a light-emitting device which is one of a plurality of light-emitting devices included in a light-emitting device group consisting of a first electrode group formed on the same insulating surface, a second electrode opposite to the first electrode group, a first layer group located between the first electrode group and the second electrode, and a common layer, the light-emitting device comprising: a first electrode of one of the first electrode groups; the second electrode; a first layer of one of the first layer groups; and a common layer, wherein the first electrode group is composed of a plurality of first electrodes independently of each other in the plurality of light-emitting devices, the first layer group is composed of a plurality of first layers independently of each other in the plurality of light-emitting devices, and the second electrode is a first electrode of the plurality of light-emitting devices. The common layer is a continuous conductive layer commonly used by the plurality of light-emitting devices, the second electrode, the first layer and the common layer overlap with the first electrode, the first layer includes a light-emitting layer containing a luminescent center substance and a first substance, the first substance is a substance in which the concentration of oxygen adducts of the first substance in the film is greater than 15 ppm when a film having the same composition as the light-emitting layer is irradiated with daylight color LED light at an illumination of 300 lux for 60 minutes in an atmospheric atmosphere, and the interval between the first layer included in the light-emitting device and the first layer included in other light-emitting devices adjacent to the light-emitting device is greater than 2 μm and less than 5 μm.

[0019] Another embodiment of the present invention is a light-emitting device having the above structure, wherein the first substance is an organic compound having an acene skeleton.

[0020] Another embodiment of the present invention is a light-emitting device having the above structure, wherein the first substance is an organic compound having an anthracene skeleton.

[0021] Another embodiment of the present invention is a light-emitting device having the above structure, wherein the luminescent center substance is an organic compound that emits blue fluorescence.

[0022] Another embodiment of the present invention is a light-emitting device having the above structure, wherein the first layer included in the adjacent other light-emitting device includes a light-emitting layer including a phosphorescent substance.

[0023] Another embodiment of the present invention is a light-emitting device having the above structure, wherein the phosphorescent substance emits green or red phosphorescent light.

[0024] Another embodiment of the present invention is a light-emitting device having the above structure, wherein the first substance is an organic compound having an anthracene skeleton.

[0025] Another embodiment of the present invention is a light-emitting device having the above structure, wherein the luminescent center substance is an organic compound that emits blue fluorescence.

[0026] Another embodiment of the present invention is a display device, comprising: a first light-emitting device; and a second light-emitting device, wherein the first light-emitting device comprises a first electrode, a second electrode, and a first layer located between the first electrode and the second electrode, and the second light-emitting device comprises a third electrode, a fourth electrode, and a second layer located between the third electrode and the fourth electrode, the first layer comprises a light-emitting layer containing a light-emitting center substance and a first substance, the first substance being a substance in which the concentration of oxygen adducts of the first substance in the film is greater than 15 ppm when a film having the same composition as the light-emitting layer is irradiated with daylight color LED light at an illumination of 300 lux for 60 minutes in an atmospheric atmosphere, and the interval between the first layer and the second layer is greater than 2 μm and less than 5 μm.

[0027] Another embodiment of the present invention is a display device, comprising: a first light-emitting device; and a second light-emitting device, wherein the first light-emitting device comprises a first electrode, a second electrode, a first layer located between the first electrode and the second electrode, and a first common layer located between the first layer and the second electrode, and the second light-emitting device comprises a third electrode, a fourth electrode, a second layer located between the third electrode and the fourth electrode, and a second common layer located between the second layer and the fourth electrode, the first common layer and the second common layer are composed of the same material, the first layer comprises a light-emitting layer containing a light-emitting center substance and a first substance, the first substance being a substance in which the concentration of oxygen adducts of the first substance in the film is greater than 15 ppm when a film having the same composition as the light-emitting layer is irradiated with daylight color LED light at an illumination of 300 lux for 60 minutes in an atmospheric atmosphere, and the interval between the first layer and the second layer is greater than 2 μm and less than 5 μm.

[0028] Another embodiment of the present invention is a display device having the above structure, wherein the first substance is an organic compound having an acene skeleton.

[0029] Another embodiment of the present invention is a display device having the above structure, wherein the first substance is an organic compound having an anthracene skeleton.

[0030] Another embodiment of the present invention is a display device having the above structure, wherein the luminescent center substance is an organic compound that emits blue fluorescence.

[0031] Another embodiment of the present invention is a light-emitting device which is one of a plurality of light-emitting devices included in a light-emitting device group consisting of a first electrode group formed on the same insulating surface, a second electrode opposite to the first electrode group, and a first layer group located between the first electrode group and the second electrode, wherein the first electrode group is composed of a plurality of first electrodes independently of each other in the plurality of light-emitting devices, the first layer group is composed of a plurality of first layers independently of each other in the plurality of light-emitting devices, the second electrode is a continuous conductive layer commonly used by the plurality of light-emitting devices, the light-emitting device includes a first electrode of one of the first electrode groups, the second electrode, and a first layer of one of the first layer groups, the second electrode and the first layer overlap with the first electrode, the first layer includes a light-emitting layer containing a luminescent center substance and a first substance, the first substance is a substance that generates an oxygen adduct of the first substance when a thin film of the first substance is irradiated with light having an intensity of 10% or more of a maximum peak intensity at a wavelength of 475 nm or less in an atmospheric atmosphere, and the interval between the first layer included in the light-emitting device and the first layer included in other light-emitting devices adjacent to the light-emitting device is 2 μm or more and 5 μm or less.

[0032] Another embodiment of the present invention is a light-emitting device which is one of a plurality of light-emitting devices included in a light-emitting device group consisting of a first electrode group formed on the same insulating surface, a second electrode opposite to the first electrode group, and a first layer group located between the first electrode group and the second electrode, wherein the first electrode group is composed of a plurality of first electrodes independently of each other in the plurality of light-emitting devices, the first layer group is composed of a plurality of first layers independently of each other in the plurality of light-emitting devices, the second electrode is a continuous conductive layer commonly used by the plurality of light-emitting devices, the light-emitting device includes a first electrode of one of the first electrode groups, the second electrode, and a first layer of one of the first layer groups, the second electrode and the first layer overlap with the first electrode, the first layer includes a light-emitting layer containing a light-emitting center substance and a first substance, when a thin film of the first substance is irradiated with daylight color LED light at an illumination of 300 lux for 60 minutes in an atmospheric atmosphere, the concentration of oxygen adduct of the first substance in a sample is 12 ppm or more, and the interval between the first layer included in the light-emitting device and the first layer included in other light-emitting devices adjacent to the light-emitting device is 2 μm or more and 5 μm or less.

[0033] Another embodiment of the present invention is a light-emitting device which is one of a plurality of light-emitting devices included in a light-emitting device group consisting of a first electrode group formed on the same insulating surface, a second electrode opposite to the first electrode group, a first layer group and a second layer located between the first electrode group and the second electrode, wherein the first electrode group is composed of a plurality of first electrodes that are independent of each other in the plurality of light-emitting devices, the first layer group is composed of a plurality of first layers that are independent of each other in the plurality of light-emitting devices, the second electrode is a continuous conductive layer commonly used by the plurality of light-emitting devices, the second layer is a continuous layer commonly used by the plurality of light-emitting devices, and the light-emitting device group is a plurality of first electrodes that are independent of each other in the plurality of light-emitting devices. The optical device includes a first electrode of one of the first electrode groups, the second electrode, a first layer of one of the first layer groups, and a second layer, the second electrode, the first layer and the second layer overlap with the first electrode, the first layer includes a light-emitting layer containing a light-emitting center substance and a first substance, when the thin film of the first substance is irradiated with daylight color LED light at an illumination of 300 lux for 60 minutes in an atmospheric atmosphere, the concentration of oxygen adduct of the first substance in the sample is greater than 12 ppm, and the first layer included in the light-emitting device and the first layer included in other light-emitting devices adjacent to the light-emitting device are spaced at least 2 μm and less than 5 μm.

[0034] Another embodiment of the present invention is a light-emitting device having the above structure, wherein the first substance is an organic compound having an acene skeleton.

[0035] Another embodiment of the present invention is a light-emitting device having the above structure, wherein the first substance is an organic compound having an anthracene skeleton.

[0036] Another embodiment of the present invention is a light-emitting device having the above structure, wherein the luminescent center substance is an organic compound that emits blue fluorescence.

[0037] Another embodiment of the present invention is a light-emitting device having the above structure, wherein the first layer included in the adjacent other light-emitting device includes a light-emitting layer including a phosphorescent substance.

[0038] Another embodiment of the present invention is a light-emitting device having the above structure, wherein the phosphorescent substance emits green or red phosphorescent light.

[0039] Another embodiment of the present invention is a light-emitting device having the above structure, wherein the first substance is an organic compound having an anthracene skeleton.

[0040] Another embodiment of the present invention is a light-emitting device having the above structure, wherein the luminescent center substance is an organic compound that emits blue fluorescence.

[0041] Another embodiment of the present invention is a display device having the above structure, comprising: a first light-emitting device; and a second light-emitting device, wherein the first light-emitting device comprises a first electrode, a second electrode, and a first layer located between the first electrode and the second electrode, the second light-emitting device comprises a third electrode, a fourth electrode, and a second layer located between the third electrode and the fourth electrode, the first layer comprises a light-emitting layer containing a luminescent center substance and a first substance, when a thin film of the first substance is irradiated with daylight color LED light at an illumination of 300 lux for 60 minutes in an atmospheric atmosphere, the concentration of oxygen adducts of the first substance in the sample is greater than 12 ppm, and the interval between the first layer and the second layer is greater than 2 μm and less than 5 μm.

[0042] Another embodiment of the present invention is a display device having the above structure, comprising: a first light-emitting device; and a second light-emitting device, wherein the first light-emitting device comprises a first electrode, a second electrode, a first layer located between the first electrode and the second electrode, and a first common layer located between the first layer and the second electrode, and the second light-emitting device comprises a third electrode, a fourth electrode, a second layer located between the third electrode and the fourth electrode, and a second common layer located between the second layer and the fourth electrode, the first common layer and the second common layer are composed of the same material, the first layer comprises a light-emitting layer containing a luminescent center substance and a first substance, when a thin film of the first substance is irradiated with daylight color LED light at an illumination of 300 lux for 60 minutes in an atmospheric atmosphere, the concentration of oxygen adducts of the first substance in the sample is greater than 12 ppm, and the interval between the first layer and the second layer is greater than 2 μm and less than 5 μm.

[0043] Another embodiment of the present invention is a display device having the above structure, wherein the first substance is an organic compound having an acene skeleton.

[0044] Another embodiment of the present invention is a display device having the above structure, wherein the first substance is an organic compound having an anthracene skeleton.

[0045] Another embodiment of the present invention is a display device having the above structure, wherein the luminescent center substance is an organic compound that emits blue fluorescence.

[0046] Another embodiment of the present invention is a display module, which includes the above-mentioned display device and at least one of a connector and an integrated circuit.

[0047] Another embodiment of the present invention is an electronic device including the above-mentioned display module and at least one of a housing, a battery, a camera, a speaker, and a microphone. Effects of the Invention

[0048] According to one embodiment of the present invention, a light-emitting device with good reliability formed by photolithography using an organic compound can be provided. In addition, according to one embodiment of the present invention, a light-emitting device capable of providing a light-emitting device with high definition and good reliability can be provided.

[0049] According to one embodiment of the present invention, a light emitting device that can be arranged at high density and has good reliability can be provided. According to one embodiment of the present invention, a light emitting device that can provide a high-definition display device and has good reliability can be provided.

[0050] In addition, according to one embodiment of the present invention, a display device with high reliability can be provided. In addition, according to one embodiment of the present invention, a display device with high resolution and good display performance can be provided. In addition, according to one embodiment of the present invention, a display device with high display quality and good display performance can be provided.

[0051] Furthermore, according to one embodiment of the present invention, a novel display device, a novel display module, and a novel electronic device can be provided.

[0052] Note that the description of these effects does not prevent the existence of other effects. One embodiment of the present invention does not necessarily have all of the above effects. Effects other than the above effects can be extracted from the description of the specification, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] Figures 1A to 1C is a diagram showing a light emitting device. Figure 2 is a diagram showing a light emitting device. Figure 3A and Figure 3B 1 and 2 are top views and cross-sectional views of the light emitting device. FIG. 4A to FIG. 4E This is a cross-sectional view showing an example of a method for manufacturing a display device. FIG. 5A to FIG. 5D This is a cross-sectional view showing an example of a method for manufacturing a display device. FIG. 6A to FIG. 6D This is a cross-sectional view showing an example of a method for manufacturing a display device. 7A to 7C This is a cross-sectional view showing an example of a method for manufacturing a display device. FIG. 8A to FIG. 8C This is a cross-sectional view showing an example of a method for manufacturing a display device. 9A to 9C This is a cross-sectional view showing an example of a method for manufacturing a display device. Fig. 10A and Fig. 10B is a perspective view showing a structural example of a display module. Fig.11A and Fig. 11B is a cross-sectional view showing a structural example of a display device. Fig.12 It is a perspective view showing a structural example of a display device. Fig.13 is a cross-sectional view showing a structural example of a display device. Fig.14 is a cross-sectional view showing a structural example of a display device. Fig.15 is a cross-sectional view showing a structural example of a display device. FIG. 16A to FIG. 16D is a diagram showing an example of an electronic device. FIG. 17A to FIG. 17F is a diagram showing an example of an electronic device. FIG. 18A to FIG. 18G is a diagram showing an example of an electronic device. Fig.19 The graphs show the emission spectrum of a daylight color LED and the emission spectrum of a daylight color LED using a wavelength cutoff filter. Fig. 20 This is a graph showing the brightness-current density characteristics of a light-emitting device at different irradiation times of a daylight color LED. Fig.21 This is a graph showing the current efficiency-luminance characteristics of light-emitting devices at different irradiation times of daylight color LEDs. Fig. 22 This is a graph showing the brightness-voltage characteristics of a light-emitting device with different irradiation times of a daylight color LED. Fig.23 This is a graph showing the current density-voltage characteristics of a light-emitting device at different irradiation times of a daylight color LED. Fig.24 This is a diagram showing the blue index-luminance characteristics of light-emitting devices with different irradiation times of daylight color LEDs. Fig.25 It is a diagram showing emission spectra of light-emitting devices at different irradiation times of daylight color LEDs. Fig.26 1 is a diagram showing normalized luminance-time variation characteristics of light-emitting devices having different irradiation times of daylight color LEDs. Fig. 27 1 is a graph showing the luminance-current density characteristics of a light emitting device irradiated with daylight color LED light using different wavelength cutoff filters. Fig.28 1 is a graph showing current efficiency-luminance characteristics of a light emitting device irradiated with daylight color LED light using different wavelength cutoff filters. Fig.29: is a graph showing the brightness-voltage characteristics of a light emitting device irradiated with daylight color LED light using different wavelength cutoff filters. Fig.30 : is a graph showing the current density-voltage characteristics of a light emitting device irradiated with daylight color LED light using different wavelength cutoff filters. Fig.31 1 is a graph showing blue index-luminance characteristics of a light emitting device irradiated with daylight color LED light using different wavelength cutoff filters. Fig.32 1 and 2 are graphs showing emission spectra of light-emitting devices irradiated with daylight color LED light using different wavelength cutoff filters. Fig.33 : is a graph showing normalized brightness-time variation characteristics of a light emitting device irradiated with daylight color LED light using different wavelength cutoff filters. Fig.34 Graphs showing the emission spectrum of daylight color LED light using a wavelength cutoff filter and the absorption spectra of 2αN-αNPhA and 3,10PCA2Nbf(IV)-02. Fig.35 is a diagram showing the emission spectrum of orange lamp. Fig.36A and Fig.36B These are chromatograms obtained by a PDA detector of co-deposited films of 2αN-αNPhA and 3,10PCA2Nbf(IV)-02 under different light irradiation conditions. Fig.37A and Fig.37B These are chromatograms obtained by the PDA detector of 2αN-αNPhA films under different light irradiation conditions. Modes for Carrying Out the Invention

[0054] The embodiments are described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and a person skilled in the art can easily understand that the mode and details can be transformed into various forms without departing from the purpose and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the contents described in the embodiments shown below.

[0055] Note that in this specification, etc., a device manufactured using a metal mask or FMM (Fine Metal Mask) is sometimes referred to as a device having an MM (Metal Mask) structure. In addition, in this specification, etc., a device manufactured without using a metal mask or FMM is sometimes referred to as a device having an MML (Metal Mask Less) structure.

[0056] (Implementation Method 1) As one of the methods for manufacturing an organic semiconductor film into a predetermined shape, vacuum evaporation using a metal mask (mask evaporation) is widely used. However, with the progress of high density and high precision, the high precision of mask evaporation is approaching the limit due to various reasons represented by problems such as alignment accuracy and configuration interval with the substrate.

[0057] On the other hand, it is expected that organic semiconductor devices with denser patterns can be realized by processing the shape of organic semiconductor films by photolithography. In addition, photolithography is easier to achieve large areas than mask evaporation, so research on processing organic semiconductor films by photolithography is underway.

[0058] However, in order to process the shape of an organic semiconductor film by photolithography, many problems need to be solved. Examples of such problems include the influence of the organic semiconductor film being exposed to the atmosphere, the influence of light irradiation when exposing a photosensitive resin, and the influence of a developer and water when developing the exposed photosensitive resin. In many cases, due to these influences, the characteristics of a light-emitting device manufactured by photolithography are inferior to those of a light-emitting device formed continuously in a vacuum.

[0059] One of the causes of these defects is that the material constituting the light-emitting device deteriorates due to irradiation with light in the air atmosphere, which leads to the generation of impurities (degraded products).

[0060] This impurity is equivalent to a decomposition product or oxygen addition product of the material, and can actually be detected. When such an impurity is generated and exists in a light-emitting device, the initial characteristics and reliability are greatly affected. Therefore, a light-emitting device using a material that generates such an impurity is difficult to process through a photolithography process.

[0061] Fig.36A and Fig.36B The chromatograms are obtained using a PDA detector of high performance liquid chromatography for the following samples: a sample in which a co-evaporated film of an anthracene derivative as the main material and a luminescent center substance exhibiting blue fluorescence was irradiated with orange light at an illumination of 195 lux for 1 hour in an atmospheric atmosphere; a sample in which a daylight-colored LED light was irradiated at an illumination of 300 lux for 0.5 hour and 1 hour; and a sample in which no light was irradiated. Fig.36B Is magnification Fig.36A of charts.

[0062] Depend on Fig.36A It can be seen that the peak of anthracene derivatives is observed in the latter half between the retention time of 7 minutes and 8 minutes. Fig.36B In the above analysis, two peaks were observed between 3 and 4 minutes. The peak near 3.7 minutes is considered to be caused by the generation of a substance in which two oxygen atoms are added to the anthracene derivative (hereinafter sometimes simply referred to as an oxygen adduct) as an impurity.

[0063] The peak of the oxygen adduct with a retention time of about 3.7 minutes was not detected in the sample irradiated with orange light at an illumination of 195 lux for 1 hour and the sample shielded from light, but was detected in the sample irradiated with daylight LED light at an illumination of 300 lux for 0.5 hour and the sample irradiated for 1 hour. In addition, when the detected peak was converted into the concentration of the oxygen adduct, the concentrations were 206 ppm and 384 ppm, respectively. It can be seen that as the irradiation time of daylight LED light becomes longer, the impurity concentration in the sample increases.

[0064] Here, when oxygen is added to an anthracene derivative, it is believed that two oxygen atoms are bonded in a manner that connects carbons located at diagonals of the aromatic ring. At this time, it is believed that all bonds are single bonds, and they have bonds like COOC. As a result, the double bond of one aromatic ring is reduced and the aromaticity is lost. Due to the loss of aromaticity, it is naturally believed that the band gap of the material becomes wider, the HOMO (Highest Occupied Molecular Orbital) energy level for hole transport becomes deeper, and the LUMO (Lowest Unoccupied Molecular Orbital) energy level for electron transport becomes shallower. This substance is generally believed to have no great effect on the characteristics of light-emitting devices, because the possibility of quenching luminescence is low due to its wider band gap than the original substance, and it is not easy to be related to carrier transport due to its deep HOMO energy level and shallow LUMO energy level.

[0065] However, the single bond between oxygen and oxygen is a very easily broken bond. The energy of the single bond between oxygen and oxygen is about 142 kJ / mol, which is very small compared with the energy of the single bond between carbon and carbon, 346 kJ / mol, and the energy of the single bond between carbon and oxygen, 358 kJ / mol. Therefore, when the light-emitting device is driven in the presence of such an oxygen adduct, the single bond between oxygen and oxygen is sometimes cut, thereby causing the degradation of device characteristics, especially the degradation of reliability, due to the corresponding side reactions.

[0066] Therefore, when a material that easily generates an oxygen adduct is used for a device that needs to be processed under an air atmosphere, it is difficult to obtain good reliability in the device.

[0067] Fig.26 : is a graph showing normalized luminance-time variation characteristics of a light emitting device irradiated with daylight color LED light at an illuminance of 300 lux for a predetermined time in an atmospheric atmosphere after forming an electron transport layer. Fig.26In the light-emitting device whose characteristics are shown in , the light-emitting layer includes a co-evaporated film of a main material of an anthracene derivative and a luminescent center substance that emits blue fluorescent light. In addition, the irradiation time of the daylight color LED light irradiated to the light-emitting device is shown in the explanation. In addition, the light-emitting device indicated by Ref. in the explanation is a light-emitting device manufactured continuously in vacuum.

[0068] Depend on Fig.26 It can be seen that in the light-emitting device using a co-evaporated film of an anthracene derivative main material and a luminescent center substance exhibiting blue fluorescent light for the light-emitting layer, an effect is observed when irradiated with daylight-colored LED light for more than 5 seconds, and an obvious effect is observed when irradiated with light for more than 1 minute. The life of the light-emitting device is significantly reduced when irradiated with light for more than 5 minutes.

[0069] When the impurities are sufficiently small relative to the main material, assuming that the generation of oxygen adducts is proportional to the exposure time of light as the main cause, according to the results of Figure 36, the concentration of oxygen adducts when irradiated with daylight color LED light at an illumination of 300 lux for 5 seconds is about 0.5 ppm. Therefore, it can be said that the influence on reliability occurs when oxygen adducts of about 0.5 ppm are generated. In addition, when considering that the light irradiation under the atmospheric atmosphere in the photolithography process is at least about 60 seconds, it can be said that the influence on reliability occurs when a film that generates oxygen adducts of 0.5 ppm or more by irradiating daylight color LED light at 300 lux for 60 seconds is used for the light-emitting layer. In other words, it is usually difficult to use a light-emitting layer (a co-evaporated film of the main material and the light-emitting center substance) that generates oxygen adducts of 0.5 ppm or more by irradiating daylight color LED light at 300 lux for 60 seconds for a light-emitting device manufactured by a photolithography process. In addition, since the influence occurs at 0.5 ppm, the concentration of oxygen adducts contained in the light-emitting layer (co-evaporated film of the host material and the light-emitting center substance) of the light-emitting device manufactured through the photolithography process is preferably 0.25 ppm or less, and more preferably 0.05 ppm or less.

[0070] Figure 37 is a chromatogram of the PDA detector using high performance liquid chromatography for the following samples: a sample in which the evaporated film of a single anthracene derivative of the main material was irradiated with orange light at an illumination of 195 lux for 1 hour in an atmospheric atmosphere, similarly to the above-mentioned co-evaporated film; a sample in which the evaporated film was irradiated with daylight-colored LED light at an illumination of 300 lux for 0.5 hour and 1 hour; and a sample that was not irradiated with light. Fig.37B Is magnification Fig.37A37 shows that even a single film of anthracene derivative generates impurities (oxygen adducts) when irradiated with daylight LED light in an atmospheric atmosphere. In a single film of anthracene derivative, 149 ppm of oxygen adducts were generated in a sample irradiated with daylight LED light at an illumination of 300 lux for 0.5 hours, and 258 ppm of oxygen adducts were generated in a sample irradiated with daylight LED light for 1 hour.

[0071] As with the co-evaporated film, when the impurities are sufficiently small relative to the main body, assuming that the generation of oxygen adducts is proportional to the irradiation time of light, which is the main cause of generation, it can be said that when an organic compound that generates 0.4ppm or more of oxygen adducts by irradiating daylight color LED light at an illumination of 300 lux for 60 seconds is used, an influence on reliability occurs. In other words, it is generally difficult to use an organic compound that generates 0.4ppm or more of oxygen adducts by irradiating daylight color LED light at an illumination of 300 lux for 60 seconds for a light-emitting device manufactured through a photolithography process. In addition, since the influence occurs at 0.4ppm, the concentration of oxygen adducts contained in the material used for the light-emitting device manufactured through a photolithography process is preferably 0.2ppm or less, and more preferably 0.04ppm or less.

[0072] Any method can be used for the quantification of impurities, but it is difficult to detect such trace impurities when using high performance liquid chromatography or the like. Therefore, based on the above assumption that oxygen adducts are formed in a manner proportional to the light irradiation time, it is sufficient to measure a sample that extends the light irradiation time to generate a detectable amount of impurities. Accordingly, for example, when a light-emitting layer (co-evaporated film of the main material and the luminescent center substance) containing more than 30ppm of oxygen adducts is irradiated with daylight color LED light at an illumination of 300 lux for 1 hour in an atmospheric atmosphere, it does have an effect, so it can be said that a light-emitting layer containing more than 15ppm or even more than 3ppm of oxygen adducts is not easy to use for light-emitting devices that have undergone a photolithography process. In other words, by using one method of the present invention, even if a light-emitting layer containing more than 3ppm or more than 15ppm or even more than 30ppm of oxygen adducts is used when daylight color LED light is irradiated for 1 hour in an atmospheric atmosphere at an illumination of 300 lux, a light-emitting device with good characteristics after a photolithography process can be obtained. In addition, a film having the same composition as the light-emitting layer can be used to verify whether the light-emitting layer is such a film. For example, a layer considered to be a light-emitting layer in a light-emitting device is analyzed, the composition is estimated from the results, and a film having the same composition as the light-emitting layer is manufactured so as to have the estimated composition.

[0073] Similarly, when an organic compound that generates an oxygen adduct of 24 ppm or more when irradiated with daylight color LED light at an illumination of 300 lux for 1 hour in an atmospheric atmosphere is used, a negative effect does occur, so it can be said that an organic compound containing an oxygen adduct of 12 ppm or more or 2.4 ppm or more is not easily used in a light-emitting device that undergoes a photolithography process. In other words, by using one embodiment of the present invention, even if an organic compound containing an oxygen adduct of 2.4 ppm or more, 12 ppm or more, or even 24 ppm or more is used when irradiated with daylight color LED light for 1 hour in an atmospheric atmosphere, a light-emitting device with good characteristics that undergoes a photolithography process can be obtained.

[0074] then, Fig.33 shows the normalized brightness-time variation characteristics of multiple light emitting devices, the multiple light emitting devices having the same Fig.26 The same structure of the light-emitting device whose characteristics are shown in the figure is irradiated with light having different light emission ends on the short wavelength side after the electron transport layer is formed. By irradiating daylight color LED light through wavelength cutoff filters with different transmission limit wavelengths (the wavelength is located at the midpoint between the wavelength when the transmittance is 5% and the wavelength when the transmittance is 72%), light having different light emission ends on the short wavelength side is irradiated.

[0075] In addition, filters with transmission limit wavelengths of 420nm, 440nm, 455nm, 475nm, 480nm, 500nm and 850nm are used as the wavelength cut-off filters, and the light source is Fig.19 The daylight color LED light of the spectrum "without filter" is shown. In addition, the daylight color LED light without filter irradiates the irradiation surface with an illuminance of 300 lux under any conditions, and the illuminance actually irradiated is lower under the condition that the more wavelength bands of the light to be cut off are passed through the filter.

[0076] Note that the wavelengths described in the legends in the drawings and tables are the transmission limit wavelengths of the wavelength cutoff filters used when irradiating light. In addition, the light-emitting devices indicated by Ref. in the legends are light-emitting devices manufactured continuously in vacuum.

[0077] Depend on Fig.33 It is known that the luminous efficiency is significantly reduced in a light emitting device that uses a filter having a transmission limit wavelength of 455 nm or less or irradiates light with a short wavelength without passing through a filter.

[0078] Depend on Fig.26 and Fig.33 The results show that impurities are generated by irradiating a fixed amount of short-wavelength light, which has a negative impact on the characteristics of the light-emitting device.

[0079] also, Fig.34This is a graph that superimposes the spectrum of daylight color LED light that has passed through a wavelength cutoff filter, the absorption spectrum of the anthracene derivative of the host material, and the luminescent center substance. Fig.34 It can be seen that the absorption end of the anthracene derivative of the main material overlaps with the spectrum when using a filter with a transmission limit wavelength of 420nm and the spectrum when not passing through the filter. It is excited by light with a wavelength below about 420nm, but not by light with a wavelength above 420nm.

[0080] On the other hand, the absorption spectrum of the luminescent center substance has a large overlap with the spectrum when a filter with a transmission limit wavelength shorter than 455 nm is used and the spectrum when no filter is used.

[0081] Compare this result with Fig.33 Considering the combination of the results, it can be seen that the negative impact on the characteristics, that is, the generation of oxygen adducts, is not only due to the excitation of the main material, but also due to the excitation of the luminescent center substance. In addition, the absorption spectrum of the luminescent center substance overlaps with the light using a filter with a transmission limit wavelength of 475nm, but the overlap is very small, so it can be considered that the light using a filter with a transmission limit wavelength of 475nm does not have a great influence on the characteristics. In addition, it can be seen that: this negative impact occurs when irradiating with light having a certain intensity in the wavelength range below 475nm (specifically, light having an intensity of more than 10% of the maximum peak intensity at wavelengths below 475nm, typically daylight white LED light), and does not occur when irradiating with orange light that has almost no intensity at wavelengths below 475nm.

[0082] In the chromatogram shown in FIG37 , the luminescent center substance was detected at 30.7 minutes, but no degraded product of the luminescent center substance was detected. It can be seen from this that the degradation of the luminescent center substance itself does not occur due to light absorption in the atmosphere, but the luminescent center substance is excited in the atmosphere, which promotes the degradation of the anthracene derivative as the main material. In addition, it can be seen that there are materials that generate degraded products due to light absorption in the atmosphere and materials that do not generate degraded products.

[0083] In addition, compared with the vapor-deposited film of a single anthracene derivative as the main material, the co-evaporated film of the main material (anthracene derivative) and the luminescent center substance used as the light-emitting layer has a higher concentration of impurities derived from the main body when irradiated with daylight color LED light in an atmospheric atmosphere. This is because the luminescent center substance, which is the main substance for luminescence, effectively absorbs visible light around 450nm where the intensity of the daylight color LED is the highest. From this result, it can be seen that the luminescent center substance is excited in the atmospheric atmosphere and promotes the degradation of the main material. Because degradation occurs even at the absorption wavelength of the luminescent center substance that is longer than the absorption wavelength of the main material that degrades, when manufacturing a light-emitting device, it is necessary to block the light of the absorption wavelength of the luminescent center substance in addition to the light of the absorption wavelength of the degraded material. In addition, since the luminescent material used for the light-emitting device for display has absorption in the visible region, it is effective to block visible light.

[0084] From the above results, it can be seen that impurities are generated by irradiating light with a certain intensity in a wavelength range below 475nm in an atmospheric atmosphere. Therefore, even if a light-emitting device that has undergone a photolithography process includes a film as a light-emitting layer that can only produce a light-emitting device with low characteristics (specifically, a film in which the concentration of oxygen adducts in a thin film state sample irradiated with daylight color LED light at an illumination of 300 lux for 60 minutes is 15ppm or more), a light-emitting device with good characteristics can be obtained by setting an environment in which irradiation with light of a uniform short wavelength is blocked.

[0085] Thus, a material that generates impurities when irradiated with light in an atmospheric atmosphere and exhibits good characteristics in a light-emitting device manufactured by a continuous vacuum process but does not exhibit good characteristics in a light-emitting device manufactured by a manufacturing process that includes a photolithography process can be easily used for a light-emitting device that has undergone a photolithography process without causing degradation in characteristics. Therefore, a light-emitting device that has high definition, high luminous efficiency or reliability, and good characteristics can be provided.

[0086] That is, one embodiment of the present invention is a light-emitting device processed by photolithography and including the following film as a light-emitting layer: a film that does not generate impurities (oxygen adducts) when irradiated with light having a certain intensity in a wavelength range below 475nm (specifically, light having an intensity of more than 10% of the maximum peak intensity at a wavelength below 475nm, typically daylight white LED light).

[0087] Alternatively, one embodiment of the present invention is a light-emitting device including, as a light-emitting layer, a film (co-evaporated film of a host material and a luminescent center substance) having an oxygen adduct concentration of 15 ppm or more when irradiated with daylight color LED light at an illuminance of 300 lux for 60 minutes.

[0088] In a light-emitting device including a blue fluorescent light-emitting substance as a luminescent center substance, the main material is preferably an organic compound having an acene skeleton, and is particularly preferably an organic compound having an anthracene skeleton, thereby realizing a light-emitting layer with high luminous efficiency and durability. However, organic compounds having an acene skeleton, especially organic compounds having an anthracene skeleton, are easy to form oxygen adducts, that is, the concentration of oxygen adducts in the sample of the co-evaporated film of the organic compound (main material) and the luminescent center substance is irradiated with daylight color LED light at an illumination of 300 lux for 60 minutes is 15ppm or more. Therefore, it is not easy to obtain good characteristics in a light-emitting device in which an organic compound having an anthracene skeleton is used as a main material and processed by photolithography. However, when exposed to the atmosphere (oxygen-containing atmosphere), light below the wavelength absorbed by the luminescent center substance is not irradiated, for example, light is not irradiated (maintaining a dark state), light with a wavelength component below 475nm is not irradiated, or an orange lamp is used as a light source to ensure the field of view, thereby suppressing the generation of oxygen adducts, so that a light-emitting device with good characteristics using these materials can be obtained.

[0089] (Implementation Method 2) In this embodiment, an organic semiconductor device according to one embodiment of the present invention, in particular, a light-emitting device is described in detail.

[0090] FIG1 is a schematic diagram of a light-emitting device of one embodiment of the present invention. A first electrode 101 of the light-emitting device is provided on an insulator 100, and an organic compound layer 103 is included between the first electrode 101 and the second electrode 102. The organic compound layer 103 includes at least a light-emitting layer 113, and the light-emitting layer 113 contains a light-emitting center substance and a first substance. In addition, the light-emitting center substance emits light when a voltage is applied between the first electrode 101 and the second electrode 102. In addition, the organic compound layer 103 is sometimes a first layer that is independent of each other in each light-emitting element, and sometimes a stack of a first layer that is independent of each other in each light-emitting device and a common layer that is used in common by a plurality of light-emitting devices.

[0091] The first substance is an organic compound that generates a degraded product (oxygen adduct) when a light source having a certain intensity in a wavelength range below 475 nm (specifically, light having an intensity of 10% or more of the maximum peak intensity at a wavelength below 475 nm, typically daylight color light) is irradiated to the co-evaporated film of the first substance and the luminescent center substance as shown in Embodiment 1. Specifically, the first substance is an organic compound having a property that the concentration of oxygen adducts in the co-evaporated film is 15 ppm or more when irradiated with 10 W daylight color LED light at an illumination of 300 lux for 60 minutes.

[0092] When the luminescent center substance is a blue fluorescent material, the first substance (main material) is preferably an organic compound having a paraben skeleton, and is particularly preferably an organic compound having an anthracene skeleton, thereby realizing a luminescent layer with high luminous efficiency and durability. However, organic compounds having a paraben skeleton, especially organic compounds having an anthracene skeleton, are easy to form oxygen adducts, that is, the concentration of oxygen adducts in the sample of the co-evaporated film of the organic compound (main material) and the luminescent center substance is irradiated with daylight color LED light at an illumination of 300 lux for 60 minutes is 15ppm or more. Therefore, it is not easy to obtain good characteristics in the light-emitting device using the organic compound having an anthracene skeleton as the main material and processed by photolithography. However, when exposed to the atmosphere (oxygen-containing atmosphere), the light of the wavelength absorbed by the luminescent center substance is not irradiated, for example, the light is not irradiated (maintaining a dark state), the light with a wavelength component below 475nm is not irradiated, or an orange lamp is used as a light source to ensure the field of view, thereby suppressing the generation of oxygen adducts, so that a light-emitting device with good characteristics using these materials can be obtained.

[0093] The first substance is contained in an amount of preferably 50% or more, more preferably 80% or more, in the light-emitting layer 113. In this case, the content can be estimated based on an absorption intensity ratio or a refractive index intensity ratio in high performance liquid chromatography (HPLC) as a solution.

[0094] Preferably, if Figure 1A As shown, the organic compound layer 103 includes functional layers such as a hole injection layer 111, a hole transport layer 112, an electron transport layer 114, and an electron injection layer 115 in addition to the light-emitting layer 113. Note that the organic compound layer 103 may include functional layers other than the above-mentioned functional layers such as a hole blocking layer, an electron blocking layer, an exciton blocking layer, and a charge generation layer. Conversely, any of the above-mentioned layers may not be provided.

[0095] In this embodiment, the first electrode 101 is recorded as an electrode including an anode and the second electrode 102 is recorded as an electrode including a cathode, but the reverse may be true. The first electrode 101 and the second electrode 102 are formed in a single-layer structure or a stacked-layer structure. When the stacked-layer structure is used, the layer in contact with the organic compound layer 103 is used as the anode or the cathode. When the electrode has a stacked-layer structure, there is no restriction on the work function of the layer other than the layer in contact with the organic compound layer 103, and the material can be selected according to the required characteristics such as resistance value, processing convenience, reflectivity, light transmittance and stability.

[0096] As the anode, it is preferred to use a metal, alloy, conductive compound, or mixture thereof with a large work function (specifically, 4.0 eV or more). Specifically, for example, indium oxide-tin oxide (ITO: Indium Tin Oxide), indium oxide-tin oxide containing silicon or silicon oxide (ITSO: Indium Tin Silicon Oxide), indium oxide-zinc oxide, indium oxide containing tungsten oxide and zinc oxide (IWZO), etc. can be cited. Although these conductive metal oxide films are usually formed by sputtering, they can also be formed by applying a sol-gel method. As an example of a formation method, a method of depositing indium oxide-zinc oxide by sputtering using a target material having 1 wt% to 20 wt% of zinc oxide added to indium oxide can be cited. In addition, indium oxide (IWZO) containing tungsten oxide and zinc oxide can be formed by sputtering using a target material having 0.5 wt% to 5 wt% of tungsten oxide and 0.1 wt% to 1 wt% of zinc oxide added to indium oxide. In addition, as the material for the anode, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), titanium (Ti), aluminum (Al) or nitrides of metal materials (for example, titanium nitride) can be cited. In addition, the layer stacked with them can also be used as an anode. For example, a film of Al, Ti, and ITSO stacked in sequence on Ti has high efficiency due to good reflectivity and can achieve a high resolution of thousands of ppi, so it is preferred. Alternatively, graphene can also be used as a material for the anode. In addition, by using the composite material that can constitute the hole injection layer 111 described later as a layer in contact with the anode (typically a hole injection layer), the electrode material can be selected regardless of the work function.

[0097] The hole injection layer 111 is in contact with the anode and has a function of facilitating hole injection into the organic compound layer 103. The hole injection layer 111 can be formed using a phthalocyanine compound such as phthalocyanine (abbreviated as H2Pc) or a phthalocyanine complex such as copper phthalocyanine (CuPc), an aromatic amine compound such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as DPAB), 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviated as DNTPD), or a polymer compound such as poly(3,4-ethylenedioxythiophene) / (polystyrenesulfonic acid) (abbreviated as PEDOT / PSS).

[0098] In addition, the hole injection layer 111 may be composed of a substance having electron acceptor properties. As the substance having electron acceptor properties, an organic compound having an electron withdrawing group (halogen or cyano group) may be used, such as 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviated as F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviated as HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviated as F6-TCNNQ), 2-(7-dicyanomethylidene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-ylidene)malononitrile, and the like. In particular, compounds such as HAT-CN in which an electron-withdrawing group is bonded to a fused aromatic ring having multiple heteroatoms are thermally stable and therefore are preferred. In addition, [3] axial ene derivatives including electron-withdrawing groups (especially halogen groups such as fluorine groups and cyano groups) are particularly preferred because their electron acceptability is very high. Specifically, examples thereof include: α, α', α"-1,2,3-cyclopropane triylidene tris[4-cyano-2,3,5,6-tetrafluorophenylacetonitrile], α, α', α"-1,2,3-cyclopropane triylidene tris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)phenylacetonitrile], α, α', α"-1,2,3-cyclopropane triylidene tris[2,3,4,5,6-pentafluorophenylacetonitrile], etc. As a substance having acceptor properties, in addition to the above-mentioned organic compounds, transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide can also be used.

[0099] The hole injection layer 111 is preferably formed using a composite material including the above-mentioned material having an acceptor property and an organic compound having a hole transport property.

[0100] As the organic compound with hole transport property used in the composite material, various organic compounds such as aromatic amine compounds, heteroaromatic compounds, aromatic hydrocarbons, high molecular weight compounds (oligomers, dendrimers, polymers, etc.) can be used. As the organic compound with hole transport property used in the composite material, it is preferred to use an organic compound with a hole mobility of 1×10 -6 cm 2 / Vs or more organic compound. The organic compound with hole transport properties used in the composite material is preferably a compound containing a fused aromatic hydrocarbon ring or a π-electron-rich heteroaromatic ring. As the fused aromatic hydrocarbon ring, an anthracene ring, a naphthalene ring, etc. are preferred. In addition, as the π-electron-rich heteroaromatic ring, a fused aromatic ring containing at least one of a pyrrole skeleton, a furan skeleton and a thiophene skeleton is preferred, and specifically a carbazole ring, a dibenzothiophene ring or a ring in which these rings are also fused with an aromatic ring or a heteroaromatic ring is preferred.

[0101] Such an organic compound having hole transport properties preferably has any one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton. In particular, it may be an aromatic amine having a substituent including a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine including a naphthalene ring, or an aromatic monoamine in which a 9-fluorenyl group is bonded to nitrogen of the amine via an arylene group. Note that when these organic compounds having hole transport properties are substances including N, N-bis(4-biphenyl)amino groups, a light-emitting device with a long life can be manufactured, so it is preferred.

[0102] Specific examples of the organic compound having a hole transport property include N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviated as BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviated as BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4"-phenyltriphenylamine (abbreviated as BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviated as BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1 ,2-d]furan-8-amine (abbreviated as BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviated as BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviated as DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-N-phenyl-4-benzidine (abbreviated as ThBA1BP), 4-(2-naphthyl)-4',4"-diphenyltriphenylamine (abbreviated as BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4"-diphenyltriphenylamine (abbreviated as BBAβNBi), 4,4'- diphenyl-4"-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviated as: BBAαNβNB), 4,4'-diphenyl-4"-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviated as: BBAαNβNB-03), 4,4'-diphenyl-4"-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviated as: BBAPβNB-03), 4,4'-diphenyl-4"-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviated as: BBA(βN2)B), 4,4'-diphenyl-4"-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviated as: BBA(βN2)B-03), 4,4'-diphenyl-4"-(4;2'-binaphthyl- 1-yl) triphenylamine (abbreviated as: BBAβNαNB), 4,4'-diphenyl-4"-(5;2'-binaphthyl-1-yl) triphenylamine (abbreviated as: BBAβNαNB-02), 4-(4-biphenyl)-4'-(2-naphthyl)-4"-phenyltriphenylamine (abbreviated as: TPBiAβNB), 4-(3-biphenyl)-4'-[4-(2-naphthyl)phenyl]-4"-phenyltriphenylamine (abbreviated as: mTPBiAβNBi), 4-(4-biphenyl)-4'-[4-(2-naphthyl)phenyl]-4"-phenyltriphenylamine (abbreviated as: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviated as: αNBA1BP), 4,4'-Bis(1-naphthyl)triphenylamine (abbreviation: αNBB1BP), 4,4'-diphenyl-4"-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazol-9-yl)phenyl]tri(biphenyl-4-yl)amine (abbreviation: YGTBi1BP-02), 4-[4'-(carbazol-9-yl)biphenyl-4-yl]-4'-(2-naphthyl)-4"-phenyltriphenylamine (abbreviation: YGTBiβNB), N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNB SF), N,N-bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-2-amine (abbreviated as: BBASF), N,N-bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviated as: BBASF(4)), N-(biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviated as: oFBiSF), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)dibenzofuran-4-amine (abbreviated as: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine ( Abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4"-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBBi1BP), 9H-fluorene-2-amine (abbreviated as: PCBBiF), N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi[9H-fluorene-4-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi[9H-fluorene-4-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi-9H-fluorene-3-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi-9H-fluorene-2-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi-9H-fluorene-1-amine, etc.

[0103] In addition, as materials with hole transport properties, as other aromatic amine compounds, N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), etc. can also be used.

[0104] By forming the hole injection layer 111, hole injection properties can be improved, so that a light-emitting device with a low driving voltage can be obtained.

[0105] Furthermore, among substances having acceptor properties, organic compounds having acceptor properties can be easily formed by vapor deposition and are therefore easy-to-use materials.

[0106] Alternatively, the material used for the hole injection layer 111 may be the first compound.

[0107] The hole transport layer 112 is formed to include an organic compound having a hole transport property. The organic compound having a hole transport property preferably has a 1×10 -6 cm 2 / Vs and above hole mobility.

[0108] Examples of the hole-transporting material include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviated as NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviated as TPD), N,N'-bis(9,9'-spirobi[9H-fluorene]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviated as BSPB), 4-phenyl-4'-(9-phenylfluorene-9-yl)triphenylamine (abbreviated as BPAFLP), 4-phenyl-3'-(9-phenylfluorene-9-yl)triphenylamine (abbreviated as mBPAFLP), and 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as PCBA1BP). , 4,4'-diphenyl-4"-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as PCBANB), 4,4'-di(1-naphthyl)-4"-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as PCNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]fluorene-2-amine (abbreviated as PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviated as PCBASF), etc.;1,3-Bis(N-carbazolyl)benzene (abbreviated as mCP), 4,4'-bis(N-carbazolyl)biphenyl (abbreviated as CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviated as CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviated as PCCP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviated as BisBPCz), 9,9'-bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviated as BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H -3,3'-bicarbazole (abbreviated as: mBPCCBP), 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviated as: βNCCP), 9-(3-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviated as: βNCCmBP), 9-(4-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviated as: βNCCBP), 9,9'-di-2-naphthyl-3,3'-9H,9'H-bicarbazole (abbreviated as: BisβNCz), 9-(2-naphthyl)-9'-[1,1':4',1"-terphenyl ]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-5'-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole Compounds having a carbazole skeleton such as oxazole, 9-(2-naphthyl)-9'-(triphenyl-2-yl)-3,3'-9H,9'H-bicarbazole, 9-phenyl-9'-(triphenyl-2-yl)-3,3'-9H,9'H-bicarbazole (abbreviated as PCCzTp), 9,9'-bis(triphenyl-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(4-biphenyl)-9'-(triphenyl-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(triphenyl-2-yl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole;Compounds having a thiophene skeleton, such as 4,4',4"-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), and 4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV); and compounds having a furan skeleton, such as 4,4',4"-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), and 4-{3-[3-(9-phenyl-9H-fluorene-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Among them, compounds having an aromatic amine skeleton and compounds having a carbazole skeleton are preferred because they have high reliability and excellent hole transport properties and contribute to lowering the driving voltage. Note that as the material constituting the hole transport layer 112, the substances listed as the materials having hole transport properties for the composite material used for the hole injection layer 111 can also be appropriately used. ;

[0109] The luminescent center substance may be a fluorescent substance, a phosphorescent substance, a substance exhibiting thermally activated delayed fluorescence (TADF), or other luminescent substances.

[0110] In the light-emitting layer, materials that can be used as the fluorescent substance include, for example, the following substances. Note that other fluorescent substances can also be used.

[0111] Examples thereof include 5,6-bis[4-(10-phenyl-9-anthracenyl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthracenyl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N '-Bis[3-(9-phenyl-9H-fluorene-9-yl)phenyl]pyrene-1,6-diamine (abbreviated as: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazole-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviated as: YGA2S), 4-(9H-carbazole-9-yl)-4'-(10-phenyl-9-anthracenyl)triphenylamine (abbreviated as: YGAPA), 4-(9H-carbazole-9-yl)-4'-(9,10-diphenyl-2- triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butyl perylene (abbreviation: TBP), 4-(10-phenyl-9-anthracenyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBAPA), N,N"-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene )bis(, N', N'-triphenyl-1,4-phenylenediamine) (abbreviated as: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazole-3-amine (abbreviated as: 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviated as: 2DPAPPA), N,N,N',N',N",N",N"',N"'-octaphenyldibenzo[g,p] (chrysene)-2,7,10,15-tetraamine (abbreviation: DBC1), coumarin 30, N-(9,10-diphenyl-2-anthracenyl)-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthracenyl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthracenyl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthracenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9 , 10-bis(biphenyl-2-yl)-N-[4-(9H-carbazole-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviated as: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviated as: DPhAPhA), coumarin 545T, N,N'-diphenylquinacridone (abbreviated as: DPQd), rubrene, 5,12-bis(biphenyl-4-yl)-6,11-diphenylnaphthacene (abbreviated as: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]vinyl}-6-methyl-4H-pyran-4-ylidene)malononitrile (abbreviated as: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizine-9- 1,2-diaminobenzene (abbreviated as: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)naphthocene-5,11-diamine (abbreviated as: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviated as: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviated as: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl -2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviation: DCJTB), 2-(2,6-bis{2-[4-(dimethylamino)phenyl]vinyl}-4H-pyran-4-ylidene)malononitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviation: BisDCJTM), N,N'-diphenyl-N,N'-(1,6-pyrene-diyl)bis[(6-phenylbenzo[b]naphtho[1,2-d] furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), 3,10-bis[N-(9-phenyl-9H-carbazole-2-yl)-N-phenylamino] naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino] naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc. In particular, condensed aromatic diamine compounds represented by pyrene diamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 are preferred because they have high hole-trapping properties, high luminous efficiency, and high reliability. ,

[0112] When a phosphorescent substance is used as a light-emitting substance in the light-emitting layer, examples of the phosphorescent substance include the following materials.

[0113] Examples include organometallic iridium complexes having a 4H-triazole skeleton, such as tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviated as [Ir(mpptz-dmp)3]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazole)iridium(III) (abbreviated as [Ir(Mptz)3]) ; tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazole]iridium(III) (abbreviated as [Ir(Mptz1-mp)3]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazole)iridium(III) (abbreviated as [Ir(Prptz1-Me)3]) and the like having a 1H-triazole skeleton; fac-tris[1-(2,6-diisopropylphenyl)-1H-1,2,4-triazole]iridium(III) (abbreviated as [Ir(Mptz1-mp)3]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazole)iridium(III) (abbreviated as [Ir(Prptz1-Me)3]); [Ir(iPrpim)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviated as [Ir(dmpimpt-Me)3]), tris(2-[1-{2,6-bis(1-methylethyl)phenyl}-1H-imidazol-2-yl-κN 3]-4-cyanophenyl-κC)iridium (III) (abbreviated as CNImIr) and other organometallic iridium complexes having an imidazole skeleton; tris[(6-tert-butyl-3-phenyl-2H-imidazo[4,5-b]pyrazin-1-yl-κC2)phenyl-κC]iridium (III) (abbreviated as [Ir(cb)3]) and other organometallic complexes having a benzimidazole skeleton; and bis[2-(4',6'-difluorophenyl)pyridinium-N,C2 '] iridium (III) tetrakis (1-pyrazolyl) borate (abbreviated as FIr6), bis [2-(4', 6'-difluorophenyl) pyridinium-N, C 2 '] iridium (III) picolinate (abbreviated as FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinium-N,C 2 '}iridium(III) picolinate (abbreviated as [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinium-N,C 2 '] Iridium (III) acetylacetonate (abbreviated as FIracac) and other organic metal iridium complexes with phenylpyridine derivatives having electron withdrawing groups as ligands. The above substances are compounds that emit blue phosphorescence and have a luminescence peak in the wavelength region of 450nm to 520nm.

[0114] In addition, tris(4-methyl-6-phenylpyrimidinyl)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-tert-butyl-6-phenylpyrimidinyl)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonate)bis(6-methyl-4-phenylpyrimidinyl)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonate)bis(6-tert-butyl-4-phenylpyrimidinyl)iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (acetylacetonate)bis(6-tert-butyl-4-phenylpyrimidinyl)iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (acetylacetonate)bis[6-(2-norbornyl)-4-phenylpyrimidinyl]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonate)bis[5-methyl -6-(2-methylphenyl)-4-phenylpyrimidinyl]iridium(III) (abbreviated as [Ir(mpmppm)2(acac)]), (acetylacetonate)bis(4,6-diphenylpyrimidinyl)iridium(III) (abbreviated as [Ir(dppm)2(acac)]) and the like organic metal iridium complexes having a pyrimidine skeleton; (acetylacetonate)bis(3,5-dimethyl-2-phenylpyrazinyl)iridium(III) (abbreviated as [Ir(mppr-Me)2(acac)]), (acetylacetonate)bis(5-isopropyl-3-methyl-2-phenylpyrazinyl)iridium(III) (abbreviated as [Ir(mppr-iPr)2(acac)]) and the like organic metal iridium complexes having a pyrazine skeleton; tris(2-phenylpyridinyl-N,C 2’ )iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinium-N,C 2’)iridium(III)acetylacetonate (abbreviated as [Ir(ppy)2(acac)]), bis(benzo[h]quinoline)iridium(III)acetylacetonate (abbreviated as [Ir(bzq)2(acac)]), tris(benzo[h]quinoline)iridium(III) (abbreviated as [Ir(bzq)3]), tris(2-phenylquinoline-N,C 2’ )iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinoline-N,C 2’ )iridium(III) acetylacetonate (abbreviated as [Ir(pq)2(acac)]), [2-d3-methyl-8-(2-pyridyl-κN)benzofurano[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridyl-κN 2)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d3)2(mbfpypy-d3)), [2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridyl-κN]benzofurano[2,3-b]pyridin-7-yl-κC]bis{5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridyl-κN]phenyl-κC}iridium(III) (abbreviation: Ir(5mtpy-d6)2(m bfpypy-iPr-d4)), [2-d3-methyl-(2-pyridyl-κN)benzofurano[2,3-b]pyridine-κC]bis[2-(2-pyridyl-κN)phenyl-κC]iridium(III) (abbreviated as Ir(ppy)2(mbfpypy-d3)), [2-(4-methyl-5-phenyl-2-pyridyl-κN)phenyl-κC]bis[2-(2-pyridyl-κN)phenyl-κC]iridium(III) (abbreviated as Ir(ppy)2(mbfpypy-d3)), y)2(mdppy)), [2-(4-d3-methyl-5-phenyl-2-pyridyl-κN2)phenyl-κC]bis[2-(5-d3-methyl-2-pyridyl-κN2)phenyl-κC]iridium(III) (abbreviated as [Ir(5mppy-d3)2(mdppy-d3)]), [2-methyl-(2-pyridyl-κN)benzofurano[2,3-b]pyridine-κC]bis[2-(2-pyridyl-κN)phenyl-κC]iridium(II I) (abbreviation: [Ir(ppy)2(mbfpypy)]), [2-(4-methyl-5-phenyl-2-pyridyl-κN)phenyl-κC]bis[2-(2-pyridyl-κN)phenyl-κC]iridium (abbreviation: [Ir(ppy)2(mdppy)]) and other organic metal iridium complexes having a pyridine skeleton; and tris(acetylacetonato)(monophenanthroline)terbium (III) (abbreviation: [Tb(acac)3(Phen)] and other rare earth metal complexes. The above substances are mainly compounds that exhibit green phosphorescence and have a luminescence peak in the wavelength region of 500nm to 600nm. In addition, since the organic metal iridium complex having a pyrimidine skeleton has particularly excellent reliability or luminescence efficiency, it is particularly preferred.

[0115] In addition, organic gold metals having a pyrimidine skeleton include: (diisobutyrylmethane)bis[4,6-bis(3-methylphenyl)pyrimidinyl]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinyl](dipivaloylmethanone)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), bis[4,6-di(naphthalene-1-yl)pyrimidinyl](dipivaloylmethanone)iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]) and the like. Iridium complexes; (acetylacetonato)bis(2,3,5-triphenylpyrazine)iridium(III) (abbreviated as [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazine)(dipivaloylmethanone)iridium(III) (abbreviated as [Ir(tppr)2(dpm)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxaline]iridium(III) (abbreviated as [Ir(Fdpq)2(acac)]) and other organometallic iridium complexes with pyrazine skeletons; tris(1-phenylisoquinoline-N,C 2’ )iridium(III) (abbreviated as [Ir(piq)3]), bis(1-phenylisoquinoline-N,C 2’ )iridium(III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]), (3,7-diethyl-4,6-nonanedione-κO4,κO6)bis[2,4-dimethyl-6-[7-(1-methylethyl)-1-isoquinolyl-κN]phenyl-κC]iridium(III), (3,7-diethyl-4,6-nonanedione-κO4,κO6)bis[2,4-dimethyl-6-[5-(1-methylethyl)-2-quinolyl-κN]phenyl-κC]iridium(III) and the like organic metal iridium complexes having a pyridine skeleton 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum (II) (abbreviated as PtOEP) and other platinum complexes; and tris (1,3-diphenyl-1,3-propanedione (propanedionato)) (monophenanthroline) europium (III) (abbreviated as [Eu (DBM) 3 (Phen)]), tris [1- (2-thenoyl) -3,3,3-trifluoroacetone] (monophenanthroline) europium (III) (abbreviated as [Eu (TTA) 3 (Phen)] and other rare earth metal complexes. The above substances are compounds that exhibit red phosphorescence and have a luminescence peak in the wavelength region of 600nm to 700nm. In addition, an organic metal iridium complex having a pyrazine skeleton can obtain red luminescence with good chromaticity.

[0116] Furthermore, in addition to the above-mentioned phosphorescent compounds, known phosphorescent compounds may be selected and used.

[0117] As TADF materials, fullerene and its derivatives, acridine and its derivatives, and eosin derivatives can be used. In addition, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd) can also be mentioned. As the metal-containing porphyrin, for example, there can be mentioned protoporphyrin-tin fluoride complex (SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF2(Copro III-4Me), octaethylporphyrin-tin fluoride complex (SnF2(OEP)), protoporphyrin-tin fluoride complex (SnF2(Etio I)) and octaethylporphyrin-platinum chloride complex (PtCl2OEP) etc. represented by the following structural formula.

[0118] [Chemical formula 1]

[0119] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindol[2,3-a]carbazole-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazine-2-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazine-10-yl)phenyl]-4,6-diphenyl-1,3 The invention also provides heterocyclic compounds having one or both of a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, such as 5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazine-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-oxanthene-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridinium)phenyl]sulfone (abbreviation: DMAC-DPS), and 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracene]-10'-one (abbreviation: ACRSA). The heterocyclic compound has a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, and both electron transport and hole transport are high, so it is preferred. Among them, in the skeleton with a π-electron-deficient heteroaromatic ring, a pyridine skeleton, a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton) and a triazine skeleton are stable and have good reliability, so it is preferred. In particular, the acceptance of the benzofuran pyrimidine skeleton, the benzothiophene pyrimidine skeleton, the benzofuran pyrazine skeleton, and the benzothiophene pyrazine skeleton is high and has good reliability, so it is preferred. In addition, in the skeleton with a π-electron-rich heteroaromatic ring, an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton and a pyrrole skeleton are stable and have good reliability, so it is preferred to have at least one of the above skeletons. In addition, a dibenzofuran skeleton is preferably used as a furan skeleton, and a dibenzothiophene skeleton is preferably used as a thiophene skeleton. As the pyrrole skeleton, it is particularly preferred to use an indole skeleton, a carbazole skeleton, an indolecarbazole skeleton, a bicarbazole skeleton, and a 3-(9-phenyl-9H-carbazole-3-yl)-9H-carbazole skeleton. In a substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded, the electron donation property of the π-electron-rich heteroaromatic ring and the electron acceptance property of the π-electron-deficient heteroaromatic ring are both high, and the energy difference between the S1 energy level and the T1 energy level becomes small, so that thermally activated delayed fluorescence can be efficiently obtained, so it is particularly preferred. Note that an aromatic ring bonded with an electron-withdrawing group such as a cyano group can also be used instead of a π-electron-deficient heteroaromatic ring. In addition, as a π-electron-rich skeleton, an aromatic amine skeleton, a phenazine skeleton, etc. can be used.In addition, as the π-electron-deficient skeleton, a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or boranthrene, an aromatic ring or heteroaromatic ring having a nitrile group or a cyano group such as benzonitrile or cyanophenyl, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, etc. can be used. In this way, a π-electron-deficient skeleton and a π-electron-rich skeleton can be used to replace at least one of the π-electron-deficient heteroaromatic ring and the π-electron-rich heteroaromatic ring.

[0120] [Chemical formula 2]

[0121] TADF materials refer to materials with a small difference between the S1 energy level and the T1 energy level and the function of converting triplet excitation energy into singlet excitation energy through anti-intersystem crossing. Therefore, triplet excitation energy can be up-converted into singlet excitation energy (anti-intersystem crossing) through tiny thermal energy and singlet excited states can be efficiently generated. In addition, triplet excitation energy can be converted into luminescence.

[0122] The exciplex formed by two substances in an excited state has the function of a TADF material that can convert triplet excitation energy into singlet excitation energy because the difference between the S1 energy level and the T1 energy level is extremely small.

[0123] Note that as an indicator of the T1 level, a phosphorescence spectrum observed at a low temperature (e.g., 77 K to 10 K) can be used. With respect to the TADF material, when the wavelength energy of an extrapolated line obtained by cutting a line at the tail of the short wavelength side of the fluorescence spectrum is taken as the S1 level and the wavelength energy of an extrapolated line obtained by cutting a line at the tail of the short wavelength side of the phosphorescence spectrum is taken as the T1 level, it is preferred that the difference between S1 and T1 is 0.3 eV or less, more preferably 0.2 eV or less.

[0124] In addition, when a TADF material is used as a light-emitting substance, the S1 energy level of the host material is preferably higher than the S1 energy level of the TADF material. In addition, the T1 energy level of the host material is preferably higher than the T1 energy level of the TADF material.

[0125] As the host material of the light-emitting layer, various carrier transport materials such as a material having an electron transport property and / or a material having a hole transport property, and the above-mentioned TADF material can be used.

[0126] As the material having hole transport properties, it is preferred to use an organic compound having an amine skeleton, a π-electron-rich heteroaromatic ring skeleton, etc. As the π-electron-rich heteroaromatic ring, it is preferred to use a fused aromatic ring containing at least any one of an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton, and specifically preferably a carbazole ring, a dibenzothiophene ring, or a ring in which these rings are further fused with an aromatic ring or a heteroaromatic ring.

[0127] Such an organic compound having hole transport properties preferably has any one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton. In particular, it may be an aromatic amine having a substituent including a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine including a naphthalene ring, or an aromatic monoamine in which a 9-fluorenyl group is bonded to nitrogen of the amine via an arylene group. Note that when these organic compounds having hole transport properties are substances including N, N-bis(4-biphenyl)amino groups, a light-emitting device with a long life can be manufactured, so it is preferred.

[0128] Examples of such organic compounds include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviated as NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviated as TPD), N,N'-bis(9,9'-spirobi[9H-fluorene]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviated as BSPB), 4-phenyl-4'-(9-phenylfluorene-9-yl)triphenylamine (abbreviated as BPAFLP), 4-phenyl-3'-(9-phenylfluorene-9-yl)triphenylamine (abbreviated as mBPAFLP), 4-phenyl- 4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBA1BP), 4,4'-diphenyl-4"-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBANB), 4,4'-di(1-naphthyl)-4"-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]fluorene-2-amine (abbreviated as: PCBAF), N -phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviated as PCBASF) and other compounds having an aromatic amine skeleton; 1,3-bis(N-carbazolyl)benzene (abbreviated as mCP), 4,4'-bis(N-carbazolyl)biphenyl (abbreviated as CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviated as CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviated as PCCP) and other compounds having a carbazole skeleton; 4,4',4"-(benzene-1,3,5-triyl)tris(dibenzothiophene) (abbreviated as DBT3 P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]dibenzothiophene (abbreviated as: DBTFLP-III), 4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviated as: DBTFLP-IV) and other compounds having a thiophene skeleton; and 4,4',4"-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviated as: DBF3P-II), 4-{3-[3-(9-phenyl-9H-fluorene-9-yl)phenyl]phenyl}dibenzofuran (abbreviated as: mmDBFFLBi-II) and other compounds having a furan skeleton. Among them, compounds having an aromatic amine skeleton and compounds having a carbazole skeleton have good reliability and high hole transport properties and help to reduce the driving voltage, so they are preferred. In addition, organic compounds listed as examples of materials having hole transport properties as a hole transport layer can also be used.

[0129] As a material having electron transport properties, it is preferable to use a material having an electron mobility of 1×10 -7 cm 2 / Vs or more, it is more preferable to use the material having an electron mobility of 1×10 -6 cm 2 In addition, any substance other than the above may be used as long as it has a higher electron-transporting property than a hole-transporting property.

[0130] As materials having electron transport properties, for example, metal complexes such as bis(10-hydroxybenzo[h]quinoline)beryllium(II) (abbreviated as BeBq2), bis(2-methyl-8-hydroxyquinoline)(4-phenylphenol)aluminum(III) (abbreviated as BAlq), bis(8-hydroxyquinoline)zinc(II) (abbreviated as Znq), bis[2-(2-benzoxazolyl)phenol]zinc(II) (abbreviated as ZnPBO), bis[2-(2-benzothiazolyl)phenol]zinc(II) (abbreviated as ZnBTZ) and organic compounds containing π-electron-deficient heteroaromatic rings are preferably used. As organic compounds containing π-electron-deficient heteroaromatic skeletons, for example, organic compounds containing heteroaromatic rings having polyazole skeletons, organic compounds containing heteroaromatic rings having pyridine skeletons, organic compounds containing heteroaromatic rings having diazine skeletons, and organic compounds containing heteroaromatic rings having triazine skeletons can be cited.

[0131] Among them, organic compounds containing heteroaromatic rings having a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), organic compounds containing heteroaromatic rings having a pyridine skeleton, or organic compounds containing heteroaromatic rings having a triazine skeleton have good reliability, so they are preferred. In particular, organic compounds containing heteroaromatic rings having a diazine (pyrimidine or pyrazine) skeleton and organic compounds containing heteroaromatic rings having a triazine skeleton have high electron transport properties, which helps to reduce the driving voltage. In addition, benzofuranopyrimidine skeletons, benzothiophenopyrimidine skeletons, benzofuranopyrazine skeletons, and benzothiophenopyrazine skeletons have high acceptor properties and high reliability, so they are preferred.

[0132] Examples of organic compounds containing a π-electron-deficient heteroaromatic ring skeleton include: 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 2,2',2"-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[ organic compounds having an azole skeleton, such as 3-(dibenzothiophene-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviated as mDBTBIm-II), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviated as BzOs); 3,5-bis[3-(9H-carbazole-9-yl)phenyl]pyridine (abbreviated as 35DCzPPy), 1,3,5-tris[3-(3-pyridyl)phenyl]benzene (abbreviated as TmPyPB), bathophenanthroline (abbreviated as Bphen), bathocuproin (abbreviated as BCP), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBphen), 2,2'-(1,3-phenylene)bis(9- Organic compounds containing a heteroaromatic ring having a pyridine skeleton, such as 2-[4-(9-phenanthrenyl)-1-naphthyl]-1,10-phenanthroline (abbreviated as: PnNPhen), 2-[4-(2-triphenyl)phenyl]-1,10-phenanthroline (abbreviated as: pTpPPhen); 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as: 2mDBTPDBq-II ), 2-[3-(3'-dibenzothiophene-4-yl)biphenyl]dibenzo[f,h]quinoxaline (abbreviated as: 2mDBTBPDBq-II), 2-[3'-(9H-carbazole-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviated as: 2mCzBPDBq), 2-[4'-(9-phenyl-9H-carbazole-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviated as: 2mpPCBPDBq), 2-[4-(3,6-diphenyl-9H-carbazole-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as: 2CzPDBq-III), 7-[3-(dibenzothiophene-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr), 9-[(3'-dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9pmDBtBPNfpr), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPn P2Pm), 4,6-bis[3-(4-dibenzothiophene)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazole-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 9,9'-[pyrimidine-4,6-diylbis(biphenyl-3,3'-diyl)]bis(9H-carbazole) (abbreviation: 4,6mCzBP2Pm), 8-(biphenyl-4-yl)-4-[3-(dibenzothiophene-4-yl)phenyl]-[1]benzofurano[3,2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 3,8-bis[3-(dibenzothiophene-4-yl)phenyl] Benzofurano[2,3-b]pyrazine (abbreviation: 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofurano[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)(1,1'-biphenyl-3-yl)]naphtho[1',2':4,5]furano[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm), 8-[(2,2'-binaphthyl)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofurano[3,2-d]pyrimidine (abbreviation: 8(βN2)-4m DBtPBfpm), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2,2'-(pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviation: 2,6(NP-PPm)2Py), 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), 2,6-bis(4-naphthyl-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidineorganic compounds having a diazine skeleton, such as 5-bis(9H-carbazole-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), 7-[4-(9-phenyl-9H-carbazole-2-yl)quinazolin-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz); 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluorene]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBP Tzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviated as mBnfBPTzn-02), 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviated as PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviated as mPCCzPTzn-02), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine Phenyl-1,3,5-triazine (abbreviation: mFBPTzn), 5-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), 2-[3-(2,6-dimethyl-3-pyridinyl)-5-(9-phenanthrenyl)phenyl]-4,6-diphenyl-1,3, 5-triazine (abbreviated as mPn-mDMePyPTzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazine-2-yl]-11,12-dihydro-12-phenyl-indolo[2,3-a]carbazole (abbreviated as BP-Icz(II)Tzn), 2-[3'-(triphenylene-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviated as mTpBPTzn), 3-[9-(4,6-diphenyl-1,3,5-triazine-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviated as PCDBfTzn), 2-(biphenyl-3-yl)-4-phenyl-6-(8-[1,1':4',Organic compounds containing heteroaromatic rings having triazine skeletons, such as [1"-terphenyl]-4-yl-1-dibenzofuranyl)-1,3,5-triazine (abbreviation: mBP-TPDBfTzn). In addition, organic compounds containing heteroaromatic rings having diazine skeletons, organic compounds containing heteroaromatic rings having pyridine skeletons, or organic compounds containing heteroaromatic rings having triazine skeletons are preferred because they have high reliability. In particular, organic compounds containing heteroaromatic rings having diazine (pyrimidine or pyrazine) skeletons and organic compounds containing heteroaromatic rings having triazine skeletons have high electron transport properties, which helps to reduce the driving voltage.

[0133] As a TADF material that can be used as a host material, the same material as the material cited above as a TADF material can be used. When a TADF material is used as a host material, the triplet excitation energy generated by the TADF material is converted into singlet excitation energy through reverse intersystem crossing and further energy is transferred to the luminescent material, thereby improving the luminous efficiency of the light-emitting device. At this time, the TADF material is used as an energy donor and the luminescent material is used as an energy acceptor.

[0134] This is very effective when the above-mentioned luminescent material is a fluorescent luminescent material. In addition, at this time, in order to obtain high luminous efficiency, the S1 energy level of the TADF material is preferably higher than the S1 energy level of the fluorescent luminescent material. In addition, the T1 energy level of the TADF material is preferably higher than the S1 energy level of the fluorescent luminescent material. Therefore, the T1 energy level of the TADF material is preferably higher than the T1 energy level of the fluorescent luminescent material.

[0135] In addition, it is preferable to use a TADF material that emits light at a wavelength overlapping with the absorption band on the lowest energy side of the fluorescent material. This is preferable because the excitation energy is smoothly transferred from the TADF material to the fluorescent material, and light emission can be obtained efficiently.

[0136] In order to efficiently generate singlet excitation energy from triplet excitation energy through anti-intersystem crossing, carrier recombination is preferably generated in TADF material. In addition, it is preferred that the triplet excitation energy generated in TADF material is not transferred to the triplet excitation energy of fluorescent material. For this reason, the fluorescent material preferably has a protective group around the luminophore (the skeleton that becomes the cause of luminescence) possessed by the fluorescent material. As the protective group, it is preferably a substituent without a π bond, preferably a saturated hydrocarbon, specifically, an alkyl group having a carbon number of more than 3 and less than 10, a substituted or unsubstituted cycloalkyl group having a carbon number of more than 3 and less than 10, and a trialkylsilyl group having a carbon number of more than 3 and less than 10, more preferably having a plurality of protective groups. The substituent without a π bond has almost no function of transmitting carriers, so it has almost no effect on carrier transmission or carrier recombination, and the luminophore of the TADF material and the fluorescent material can be kept away from each other. Here, the luminophore refers to the atomic group (skeleton) that becomes the cause of luminescence in the fluorescent material. The luminophore preferably has a π-bond skeleton, preferably contains an aromatic ring, and preferably has a condensed aromatic ring or a condensed heteroaromatic ring. Examples of the condensed aromatic ring or the condensed heteroaromatic ring include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, and the like. In particular, luminophores having a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, Fluorescent substances having a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, or a naphthobisbenzofuran skeleton are preferred because they have high fluorescence quantum yields.

[0137] In the case where a fluorescent material is used as a luminescent material, as a host material, it is preferred to use a material having an acene skeleton, especially an anthracene skeleton. By using a substance having an anthracene skeleton as a host material of a fluorescent material, a light-emitting layer with high luminous efficiency and durability can be achieved. Among the substances having an anthracene skeleton used as a host material, substances having a diphenylanthracene skeleton (especially a 9,10-diphenylanthracene skeleton) are chemically stable, so they are preferred. In addition, in the case where the host material has a carbazole skeleton, the injection / transport properties of holes are improved, so it is preferred. In the case of a benzocarbazole skeleton having a benzene ring fused to carbazole, its HOMO is about 0.1eV shallower than carbazole, and holes are easily injected, so it is more preferred. In particular, in the case where the host material has a dibenzocarbazole skeleton, its HOMO is about 0.1eV shallower than carbazole, and not only holes are easily injected, but also hole transport and heat resistance are improved, so it is preferred. Therefore, a more preferred host material is one having a 9,10-diphenylanthracene skeleton and a carbazole skeleton (or a benzocarbazole skeleton or a dibenzocarbazole skeleton). Note that from the viewpoint of the hole injection / transport property, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.

[0138] Examples of such substances include 9-phenyl-3-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as PCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPN), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as CzPA), 7-[4-(10-phenyl-9-anthracenyl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviated as cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthracenyl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviated as 2mBnfPPA), 9-phenyl-10-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]- biphenyl-4'-yl]-anthracene (abbreviation: FLPPA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α, βADN), 2-(10-phenylanthracene-9-yl)dibenzofuran, 2-(10-phenyl-9-anthracenyl)-benzo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-{4-[10-(biphenyl-4-yl)-9-anthracenyl]phenyl}-2-ethyl-1H-benzimidazole (abbreviation: EtBImPBPhA), and the like. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA are preferred because they exhibit very good properties.

[0139] However, organic compounds having an acene skeleton, especially organic compounds having an anthracene skeleton, are prone to form oxygen adducts, that is, the concentration of oxygen adducts in the sample of the co-evaporated film of the organic compound (main material) having an anthracene skeleton and the luminescent center substance is irradiated with daylight color LED light at an illumination of 300 lux for 60 minutes is 15ppm or more. Therefore, it is not easy to obtain good characteristics in the light-emitting device that uses the organic compound having an anthracene skeleton as the main material and is processed by photolithography. However, when exposed to the atmosphere (in an oxygen-containing atmosphere), light of a wavelength absorbed by the luminescent center substance is not irradiated, for example, light is not irradiated (maintaining a dark state), light with a wavelength component below 475nm is not irradiated, or an orange lamp is used as a light source to ensure the field of view, thereby suppressing the generation of oxygen adducts, thereby obtaining a light-emitting device with good characteristics using these materials.

[0140] In addition, the host material may also be a material mixed with multiple substances. When a mixed host material is used, it is preferred to mix a material having an electron transport property and a material having a hole transport property. By mixing a material having an electron transport property and a material having a hole transport property, it is easier to adjust the transport property of the light-emitting layer 113, and it is also easier to control the recombination area. The weight ratio of the content of the material having a hole transport property and the material having an electron transport property is 1:19 to 19:1.

[0141] Note that as part of the above mixed material, a phosphorescent substance may be used. When a fluorescent substance is used as a light-emitting substance, the phosphorescent substance may be used as an energy donor for supplying excitation energy to the fluorescent substance.

[0142] In addition, these mixed materials can also be used to form an exciplex. By selecting the mixed material in a manner to form an exciplex that emits light overlapping the wavelength of the absorption band on the lowest energy side of the luminescent substance, energy transfer can be smoothed, thereby efficiently obtaining luminescence, so it is preferred. In addition, by adopting this structure, the driving voltage can be reduced, so it is preferred.

[0143] Note that at least one of the materials forming the exciplex may be a phosphorescent substance. This allows efficient conversion of triplet excitation energy into singlet excitation energy via anti-intersystem crossing.

[0144] Regarding the combination of materials that efficiently form an exciplex, the HOMO energy level of the material having hole transport properties is preferably higher than the HOMO energy level of the material having electron transport properties. In addition, the LUMO energy level of the material having hole transport properties is preferably higher than the LUMO energy level of the material having electron transport properties. Note that the LUMO energy level and HOMO energy level of the material can be obtained from the electrochemical properties (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV).

[0145] Note that the formation of an exciplex can be confirmed, for example, by comparing the emission spectra of a material having hole transport properties, the emission spectra of a material having electron transport properties, and the emission spectra of a mixed film formed by mixing these materials. When the emission spectrum of the mixed film is observed to drift toward the long wavelength side compared to the emission spectrum of each material (or to have a new peak on the long wavelength side), it indicates that an exciplex has been formed. Alternatively, the transient photoluminescence (PL) of a material having hole transport properties, the transient PL of a material having electron transport properties, and the transient PL of a mixed film formed by mixing these materials are compared. When the transient response is different, such as the ratio of the transient PL lifetime of the mixed film to the transient PL lifetime of each material is increased, it indicates that an exciplex has been formed. In addition, the above-mentioned transient PL can be referred to as transient electroluminescence (EL). In other words, the formation of an exciplex can be confirmed by comparing the transient EL of a material having hole transport properties, the transient EL of a material having electron transport properties, and the transient EL of a mixed film of these materials and observing the difference in transient response.

[0146] The electron transport layer 114 is a layer containing a substance having an electron transport property. As the material having an electron transport property, it is preferable to use a material having an electron mobility of 1×10 -7 cm 2 / Vs or more, it is more preferable to use the material having an electron mobility of 1×10 -6 cm 2 / Vs or more. In addition, as long as the electron transport property is higher than the hole transport property, substances other than the above can be used. As the above-mentioned organic compound, it is preferred to use an organic compound containing a π-electron-deficient heteroaromatic ring. As an organic compound containing a π-electron-deficient heteroaromatic ring, for example, it is preferred to use any one or more of an organic compound containing a heteroaromatic ring having a polyazole skeleton, an organic compound containing a heteroaromatic ring having a pyridine skeleton, an organic compound containing a heteroaromatic ring having a diazine skeleton, and an organic compound containing a heteroaromatic ring having a triazine skeleton.

[0147] As an organic compound with electron transport properties that can be used for the above-mentioned electron transport layer 114, an organic compound that can be used as an organic compound with electron transport properties in the above-mentioned light-emitting layer 113 can also be used. Among them, an organic compound containing a heteroaromatic ring having a diazine skeleton, an organic compound containing a heteroaromatic ring having a pyridine skeleton, or an organic compound containing a heteroaromatic ring having a triazine skeleton has good reliability, so it is preferred. In particular, an organic compound containing a heteroaromatic ring having a diazine (pyrimidine or pyrazine) skeleton and an organic compound containing a heteroaromatic ring having a triazine skeleton have high electron transport properties, which helps to reduce the driving voltage. In particular, it is preferred to use organic compounds having a phenanthroline skeleton such as mTpPPhen, PnNPhen and mPPhen2P, and it is more preferred to use an organic compound having a phenanthroline dimer structure such as mPPhen2P because it has good stability.

[0148] In addition, the electron transport layer 114 may also have a stacked structure. In addition, the layer in contact with the light-emitting layer 113 in the electron transport layer 114 having a stacked structure may also be used as a hole blocking layer. When the electron transport layer in contact with the light-emitting layer is used as a hole blocking layer, it is preferred to use a material whose HOMO energy level is deeper than the HOMO energy level of the material contained in the light-emitting layer 113 by 0.5 eV or more.

[0149] As the electron injection layer 115, a layer containing a compound or complex of an alkali metal or alkaline earth metal such as 8-hydroxyquinoline-lithium (abbreviation: Liq) or 1,1'-pyridine-2,6-diyl-bis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine) (abbreviation: hpp2Py) or the like may be provided. As the electron injection layer 115, an alkali metal or alkaline earth metal or a compound thereof may be contained in a layer formed using a substance having an electron transport property.

[0150] Alternatively, the charge generation layer 116 may be provided instead of the electron injection layer 115 ( Figure 1B ). The charge generation layer 116 is a layer that can inject holes into the layer in contact with the cathode side of the layer and inject electrons into the layer in contact with the anode side of the layer by applying a potential. The charge generation layer 116 includes at least a P-type layer 117. The P-type layer 117 is preferably formed using the above-mentioned composite material constituting the hole injection layer 111. In addition, the P-type layer 117 can also be formed by stacking a film containing the above-mentioned accepting material and a film containing a hole transport material as a material constituting the composite material. By applying a potential to the P-type layer 117, electrons and holes are injected into the electron transport layer 114 and the cathode, respectively, so that the organic EL element works. In addition, the organic compound of one embodiment of the present invention is an organic compound with a low refractive index. By using it for the P-type layer 117, an organic EL element with good external quantum efficiency can be obtained.

[0151] In addition, the charge generation layer 116 preferably includes one or both of an electron relay layer 118 and an electron injection buffer layer 119 in addition to the P-type layer 117 .

[0152] The electron relay layer 118 contains at least a substance with electron transport properties, and can prevent the interaction between the electron injection buffer layer 119 and the P-type layer 117, and smoothly transfer electrons. The LUMO energy level of the substance with electron transport properties contained in the electron relay layer 118 is preferably set between the LUMO energy level of the accepting substance in the P-type layer 117 and the LUMO energy level of the substance contained in the layer in the electron transport layer 114 that contacts the charge generation layer 116. Specifically, the LUMO energy level of the substance with electron transport properties in the electron relay layer 118 is preferably above -5.0 eV, and more preferably above -5.0 eV and below -3.0 eV. In addition, as the substance with electron transport properties in the electron relay layer 118, it is preferred to use a phthalocyanine material or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0153] The electron injection buffer layer 119 can use substances with high electron injection properties such as alkali metals, alkaline earth metals, rare earth metals and compounds of these substances (alkali metal compounds (including oxides such as lithium oxide, halides, carbonates such as lithium carbonate or cesium carbonate), alkaline earth metal compounds (including oxides, halides, carbonates) or rare earth metal compounds (including oxides, halides, carbonates)).

[0154] In addition, when the electron injection buffer layer 119 contains a substance having an electron transport property and a donor substance, as a donor substance, in addition to alkali metals, alkaline earth metals, rare earth metals and compounds of these substances (alkali metal compounds (including oxides such as lithium oxide, halides, carbonates such as lithium carbonate or cesium carbonate), alkaline earth metal compounds (including oxides, halides, carbonates) or rare earth metal compounds (including oxides, halides, carbonates)), tetrathianaphthacene (abbreviated as: TTN), nickelocene, decamethylnickelocene and other organic compounds can also be used. In addition, as a substance having an electron transport property, the same material as the material for the electron transport layer 114 described above can be used.

[0155] The second electrode 102 is an electrode including a cathode. The second electrode 102 may also have a laminated structure, in which case the layer in contact with the organic compound layer 103 is used as a cathode. As a material forming the cathode, metals, alloys, conductive compounds, and mixtures thereof with a small work function (specifically, less than 3.8 eV) may be used. Specific examples of such cathode materials include alkali metals such as lithium (Li) or cesium (Cs), elements belonging to Group 1 or Group 2 in the periodic table such as magnesium (Mg), calcium (Ca), or strontium (Sr), alloys containing them (MgAg, AlLi), compounds (lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), etc.), rare earth metals such as europium (Eu), ytterbium (Yb), and alloys containing them. However, by providing an electron injection layer 115 or a thin film of the above-mentioned material with a small work function between the second electrode 102 and the electron transport layer, various conductive materials such as Al, Ag, ITO, indium oxide-tin oxide containing silicon or silicon oxide, etc. can be used as cathodes regardless of the size of the work function.

[0156] In the case where the second electrode 102 is formed of a material that is transparent to visible light, a light-emitting device that emits light from the second electrode 102 side can be formed.

[0157] These conductive materials can be formed by dry methods such as vacuum deposition and sputtering, inkjet, spin coating, etc. Alternatively, they can be formed by wet methods such as sol-gel or by wet methods using a paste of a metal material.

[0158] The organic compound layer 103 can be formed by any of a variety of methods, whether dry or wet, such as vacuum deposition, gravure printing, offset printing, screen printing, inkjet, or spin coating.

[0159] Furthermore, each electrode or each layer described above may also be formed by using a different film forming method.

[0160] Next, refer to Figure 1C A method of describing a light-emitting device having a structure in which a plurality of light-emitting units are stacked (also referred to as a stacked element or a tandem element) is described. The organic EL element is an organic EL element having a plurality of light-emitting units between an anode and a cathode. One light-emitting unit has Figure 1A The structure of the organic compound layer 103 is substantially the same as that shown in FIG. Figure 1C The organic EL element shown is an organic EL element having a plurality of light-emitting units. Figure 1A or Figure 1B The organic EL element shown is an organic EL element having one light-emitting unit.

[0161] exist Figure 1CIn the embodiment, a first light-emitting unit 511 and a second light-emitting unit 512 are stacked between the first electrode 501 and the second electrode 502, and a charge generation layer 513 is provided between the first light-emitting unit 511 and the second light-emitting unit 512. The first electrode 501 and the second electrode 502 are respectively equivalent to Figure 1A The first electrode 101 and the second electrode 102 in the embodiment of the present invention can be applied to Figure 1A In addition, the first light emitting unit 511 and the second light emitting unit 512 may have the same structure or different structures.

[0162] The charge generation layer 513 has a function of injecting electrons into one light-emitting unit and injecting holes into the other light-emitting unit when a voltage is applied to the first electrode 501 and the second electrode 502. Figure 1C When a voltage is applied so that the potential of the anode is higher than the potential of the cathode, the charge generation layer 513 may inject electrons into the first light-emitting unit 511 and inject holes into the second light-emitting unit 512 .

[0163] The charge generation layer 513 preferably has Figure 1B The charge generation layer 116 shown in FIG. 1 has the same structure as the charge generation layer 116 shown in FIG. Since the composite material of the organic compound and the metal oxide has good carrier injection and carrier transport properties, low voltage driving and low current driving can be achieved. Note that when the surface on the anode side of the light-emitting unit is in contact with the charge generation layer 513, the charge generation layer 513 can have the function of the hole injection layer of the light-emitting unit, so the light-emitting unit may not be provided with a hole injection layer.

[0164] When the electron injection buffer layer 119 is provided in the charge generation layer 513, since the electron injection buffer layer 119 has the function of an electron injection layer in the light emitting unit on the anode side, an electron injection layer is not necessarily provided in the light emitting unit on the anode side.

[0165] Although in Figure 1C , an organic EL element having two light-emitting units is described, but an organic EL element having three or more light-emitting units stacked can be similarly applied. As in the organic EL element according to this embodiment, by separating and arranging a plurality of light-emitting units between a pair of electrodes using the charge generation layer 513, the element can achieve high-brightness light emission while maintaining a low current density, and can achieve an element with a long life. In addition, a light-emitting device that can be driven at a low voltage and has low power consumption can be achieved.

[0166] In addition, by making the emission colors of each light-emitting unit different, the desired color of light can be obtained in the entire organic EL element. For example, by obtaining red and green emission colors from the first light-emitting unit and blue emission color from the second light-emitting unit in an organic EL element having two light-emitting units, an organic EL element that emits white light in the entire organic EL element can be obtained.

[0167] In addition, the organic compound layer 103, the first light-emitting unit 511, the second light-emitting unit 512, the charge generation layer and other layers and electrodes can be formed by, for example, evaporation (including vacuum evaporation), droplet jetting (also known as inkjet), coating, gravure printing, etc. In addition, it can also include low molecular weight materials, medium molecular weight materials (including oligomers, dendritic polymers) or high molecular weight materials.

[0168] Figure 2 Two adjacent light-emitting devices (the light-emitting device 130 a and the light-emitting device 130 b ) in a light-emitting device group including a plurality of light-emitting devices 130 included in a display device according to one embodiment of the present invention are shown.

[0169] The light-emitting device 130a includes an organic compound layer 103a between a first electrode 101a on an insulating layer 175 and a second electrode 102 opposite to the first electrode 101a. Although the organic compound layer 103a is shown to include a hole injection layer 111a, a hole transport layer 112a, a light-emitting layer 113a, an electron transport layer 114a, and an electron injection layer 115, the organic compound layer 103a may also have a stacked structure different from the above structure. The organic compound layer 103a includes a first layer 135a that is independent of each other in each light-emitting device, and may also include a common layer 136 that is commonly used by a plurality of light-emitting devices. Figure 2 In the embodiment, the hole injection layer 111a, the hole transport layer 112a, the light emitting layer 113a, and the electron transport layer 114a are equivalent to the first layer, and the electron injection layer 115 is equivalent to the common layer. In addition, the electron injection layer 115 may also have a structure that is independent of each other in each light emitting device, and the organic compound layer 103a as a whole may also be the first layer 135a.

[0170] The light emitting device 130b includes an organic compound layer 103b between a first electrode 101b on an insulating layer 175 and a second electrode 102 opposite to the first electrode 101b. Although the structure of the organic compound layer 103b including a hole injection layer 111b, a hole transport layer 112b, a light emitting layer 113b, an electron transport layer 114b, and an electron injection layer 115 is shown, the organic compound layer 103b may also have a stacked structure different from the above structure. Figure 2In the embodiment, the hole injection layer 111b, the hole transport layer 112b, the light emitting layer 113b, and the electron transport layer 114b are equivalent to the first layer 135b, and the electron injection layer 115 is equivalent to the common layer 136. In addition, the electron injection layer 115 may have a structure that is independent of each other in each light emitting device, and the organic compound layer 103b as a whole may be the first layer 135b.

[0171] Note that the light-emitting device 130a and the light-emitting device 130b preferably include the electron injection layer 115 and the second electrode 102 together as a continuous layer (common layer). In addition, since the organic compound layer 103a and the organic compound layer 103b (first layer) other than the electron injection layer 115 are processed by photolithography after the electron transport layer 114a and the electron transport layer 114b are formed, they are independent of each other. In addition, the end (contour) of the organic compound layer 103a other than the electron injection layer 115 is processed by photolithography, so it is roughly aligned in the direction perpendicular to the substrate. In addition, the end (contour) of the organic compound layer 103b other than the electron injection layer 115 is processed by photolithography, so it is roughly aligned in the direction perpendicular to the substrate. At this time, a heating process related to the photolithography process is performed after the electron transport layer 114a and the electron transport layer 114b are formed.

[0172] Furthermore, since the organic compound layer is processed by photolithography, the distance d between the first electrode 101 a and the first electrode 101 b can be smaller than that in mask evaporation, that is, can be greater than or equal to 2 μm and less than or equal to 5 μm.

[0173] (Implementation 3) In this embodiment, a case where the organic semiconductor device which is one embodiment of the present invention is a light-emitting device which can be used as a display element of a display device is described.

[0174] like Figure 3A and Figure 3B As shown, a plurality of light emitting devices 130 are formed on an insulating layer 175 and constitute a display device.

[0175] The display device includes a pixel portion 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 includes a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0176] In this specification, for example, when describing the common contents among sub-pixel 110R, sub-pixel 110G, and sub-pixel 110B, sub-pixel 110 may be referred to as sub-pixel 110. Similarly, when describing the common contents among other components distinguished by letters, the letters may be omitted.

[0177] Sub-pixel 110R emits red light, sub-pixel 110G emits green light, and sub-pixel 110B emits blue light. Thus, an image can be displayed on pixel portion 177. In the present embodiment, sub-pixels of three colors, red (R), green (G), and blue (B), are used as examples for description, but a combination of sub-pixels of other colors may also be used. In addition, the number of sub-pixels is not limited to three, and four or more may also be used. As four sub-pixels, for example, there may be: sub-pixels of four colors, R, G, B, and white (W); sub-pixels of four colors, R, G, B, and Y; and sub-pixels of four colors, R, G, B, and infrared light (IR); and the like.

[0178] In this specification and the like, the row direction may be referred to as the X direction and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly intersect.

[0179] exist Figure 3A In the example shown, sub-pixels of different colors are arranged in the X direction, and sub-pixels of the same color are arranged in the Y direction. Note that sub-pixels of different colors may be arranged in the Y direction, and sub-pixels of the same color may be arranged in the X direction.

[0180] The connection portion 140 is provided outside the pixel portion 177, and a region 141 may be provided. The region 141 is provided between the pixel portion 177 and the connection portion 140. The organic compound layer 103 is provided in the region 141. In addition, the connection portion 140 is provided with a conductive layer 151C.

[0181] 3 , the region 141 and the connection portion 140 are located on the right side of the pixel portion 177, but there is no particular limitation on the positions of the region 141 and the connection portion 140. In addition, the region 141 and the connection portion 140 may be one or more.

[0182] Figure 3B It is along Figure 3A An example of a cross-sectional view along the dot-dash line A1-A2 in FIG. Figure 3A As shown, the display device includes an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and on the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 is disposed on a substrate (not shown). The insulating layer 175, the insulating layer 174, and the insulating layer 173 are provided with openings that reach the conductive layer 172, and a plug 176 is provided in a manner of being embedded in the opening.

[0183] In the pixel portion 177, the light emitting device 130 is provided on the insulating layer 175 and the plug 176. In addition, a protective layer 131 is provided so as to cover the light emitting device 130. The substrate 120 is bonded to the protective layer 131 by the resin layer 122. In addition, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are preferably provided between adjacent light emitting devices 130.

[0184] Figure 3B Although the cross sections of the plurality of inorganic insulating layers 125 and the plurality of insulating layers 127 are shown, the inorganic insulating layers 125 and the insulating layers 127 are preferably formed as one layer connected to each other when the display device is viewed from above. That is, the insulating layer 127 is preferably an insulating layer having an opening on the first electrode.

[0185] exist Figure 3B 130R, 130G, and 130B are shown as the light emitting device 130. The light emitting device 130R, 130G, and 130B can emit light of different colors from each other. For example, the light emitting device 130R can emit red light, the light emitting device 130G can emit green light, and the light emitting device 130B can emit blue light. In addition, the light emitting device 130R, the light emitting device 130G, or the light emitting device 130B can also emit other visible light or infrared light. Note that in Figure 3B In the embodiment, the light emitting device 130R and the light emitting device 130G, and the light emitting device G and the light emitting device B may be respectively referred to as light emitting devices adjacent to each other.

[0186] The display device of one embodiment of the present invention may have, for example, a top emission structure that emits light in a direction opposite to a substrate on which a light-emitting device is formed. Alternatively, the display device of one embodiment of the present invention may have a bottom emission structure.

[0187] The light-emitting device 130R is a light-emitting device that emits red light (preferably phosphorescence), and preferably has the structure described in Embodiment 1 or Embodiment 2. The light-emitting device 130R includes a first electrode 101R (pixel electrode) composed of a conductive layer 151R and a conductive layer 152R, a first layer 135R on the first electrode, a common layer 136 on the first layer 135R, and a second electrode (common electrode) 102 on the common layer 136. The common layer 136 is preferably an electron injection layer.

[0188] The light-emitting device 130G is a light-emitting device that emits green light (preferably phosphorescence), and may have the structure described in Embodiment 1 or Embodiment 2. The light-emitting device 130G includes a first electrode 101G (pixel electrode) composed of a conductive layer 151G and a conductive layer 152G, a first layer 135G on the first electrode, a common layer 136 on the first layer 135G, and a second electrode (common electrode) 102 on the common layer 136. The common layer 136 is preferably an electron injection layer.

[0189] The light-emitting device 130B is a light-emitting device that emits blue light (preferably phosphorescence), and preferably has the structure described in Embodiment 1 or Embodiment 2. The light-emitting device 130B includes a first electrode 101B (pixel electrode) composed of a conductive layer 151B and a conductive layer 152B, a first layer 135B on the first electrode, a common layer 136 on the first layer 135B, and a second electrode (common electrode) 102 on the common layer 136. The common layer 136 is preferably an electron injection layer.

[0190] One of the pixel electrode (first electrode) and the common electrode (second electrode) included in the light emitting device is used as an anode, and the other is used as a cathode. In this embodiment, unless otherwise specified, it is sometimes assumed that the pixel electrode is used as an anode and the common electrode is used as a cathode.

[0191] The first layer 135R, the first layer 135G, and the first layer 135B are each independent in the form of an island or independent in the form of an island for each luminous color. Note that the first layer 135R, the first layer 135G, and the first layer 135B preferably do not overlap with each other. Sometimes the first layer included in the plurality of light-emitting devices 130 formed in the light-emitting device such as the first layer 135R, the first layer 135G, and the first layer 135B is collectively referred to as the first layer group 135A. By setting the first layer group 135A in the form of an island for each light-emitting device 130, the leakage current between adjacent light-emitting devices 130 can be suppressed even in a high-definition display device. As a result, crosstalk can be prevented to realize a display device with extremely high contrast. In particular, a display device with high current efficiency at low brightness can be realized.

[0192] The island-shaped first layer group 135A is formed by depositing an EL film in accordance with the emission color and processing the EL film by photolithography.

[0193] The first layer 135 is preferably provided in a manner covering the top surface and the side surface of the first electrode 101 (pixel electrode) of the light-emitting device 130. Thus, compared with a structure in which the end of the first layer 135 is located inside the end of the pixel electrode, it is easy to increase the aperture ratio of the display device. In addition, by covering the side surface of the pixel electrode of the light-emitting device 130 with the first layer 135, the first electrode 101 can be prevented from contacting the second electrode 102, so that a short circuit of the light-emitting device 130 can be prevented.

[0194] In the display device of one embodiment of the present invention, the first electrode 101 (pixel electrode) of the light-emitting device preferably has a stacked structure. Figure 3B In the illustrated example, the first electrode 101 of the light emitting device 130 has a stacked-layer structure of a conductive layer 151 provided on the substrate 171 side and a conductive layer 152 provided on the organic compound layer side.

[0195] For example, a metal material can be used as the conductive layer 151. Specifically, for example, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys obtained by appropriately combining these metals can be used.

[0196] As the conductive layer 152, an oxide containing any one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, it is preferable to use a conductive oxide containing any one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, indium tin oxide containing silicon has a large work function, for example, 4.0 eV or more, so it can be preferably used as the conductive layer 152.

[0197] Each of the conductive layer 151 and the conductive layer 152 may have a stacked structure including a plurality of layers of different materials. In this case, the conductive layer 151 may include a layer using a material that can be used for the conductive layer 152 such as a conductive oxide, and the conductive layer 152 may include a layer using a material that can be used for the conductive layer 151 such as a metal material. For example, when the conductive layer 151 has a stacked structure of two or more layers, the layer in contact with the conductive layer 152 may be a layer using a material that can be used for the conductive layer 152.

[0198] The end of the conductive layer 151 preferably has a tapered shape. Specifically, the end of the conductive layer 151 preferably has a tapered shape with a taper angle less than 90°. In this case, the conductive layer 152 disposed along the side of the conductive layer 151 also has a tapered shape. By making the side of the conductive layer 152 have a tapered shape, the coverage of the first layer 135 disposed along the side of the conductive layer 152 can be improved.

[0199] Next, the method having the Figure 3A An example of a method for manufacturing a display device having the structure shown.

[0200] [Production method example 1] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by sputtering, chemical vapor deposition (CVD), vacuum evaporation, pulsed laser deposition (PLD), ALD (Atomic Layer Deposition), etc.

[0201] In addition, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed using wet deposition methods such as spin coating, dipping, spraying, inkjet, dispenser, screen printing, offset printing, doctor knife, slit coating, roll coating, curtain coating or doctor knife coating.

[0202] In addition, when processing a thin film constituting the display device, it is possible to perform processing using, for example, photolithography.

[0203] In the photolithography method, as the light used for exposure, for example, i-line (wavelength 365nm), g-line (wavelength 436nm), h-line (wavelength 405nm) or a mixture of these lights can be used. In addition, ultraviolet light, KrF laser or ArF laser, etc. can also be used. In addition, exposure can also be performed using liquid immersion exposure technology. In addition, as the light used for exposure, extreme ultraviolet (EUV: Extreme Ultra-violet) light or X-rays can also be used. In addition, instead of the light used for exposure, an electron beam can also be used.

[0204] For etching of the thin film, dry etching, wet etching, sand blasting, or the like can be used.

[0205] First, if Figure 4A As shown in the figure, an insulating layer 171 is formed on a substrate (not shown). Then, a conductive layer 172 and a conductive layer 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layer 172 and the conductive layer 179. Then, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0206] As the substrate, a substrate having heat resistance at least enough to withstand the subsequent heat treatment can be used. For example, a glass substrate; a quartz substrate; a sapphire substrate; a ceramic substrate; an organic resin substrate; or a semiconductor substrate such as a single crystal semiconductor substrate or a polycrystalline semiconductor substrate made of silicon or silicon carbide, a compound semiconductor substrate such as silicon germanium, an SOI substrate, etc. can be used.

[0207] Then, if Figure 4AAs shown in FIG. 1 , openings reaching the conductive layer 172 are formed in the insulating layer 175, the insulating layer 174, and the insulating layer 173. Next, the plug 176 is formed so as to be embedded in the opening.

[0208] Then, if Figure 4A As shown in FIG. 1 , a conductive film 151f, which will later become the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, and the conductive layer 151C, is formed on the plug 176 and the insulating layer 175. As the conductive film 151f, for example, a metal material can be used.

[0209] Then, if Figure 4A As shown in FIG. 1 , a resist mask 191 is formed on the conductive film 151f. The resist mask 191 can be formed by applying a photosensitive material (photoresist), exposing it to light, and developing it.

[0210] Then, if Figure 4B As shown, for example, the conductive film 151f is removed in a region that does not overlap with the resist mask 191. Thus, the conductive layer 151 is formed.

[0211] Then, if Figure 4C As shown, the resist mask 191 is removed. The resist mask 191 can be removed by ashing using oxygen plasma, for example.

[0212] Then, if Figure 4D As shown, an insulating film 156f, which will later become the insulating layer 156R, the insulating layer 156G, the insulating layer 156B and the insulating layer 156C, is formed on the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, the conductive layer 151C and the insulating layer 175.

[0213] The insulating film 156f can be formed using an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film. For example, silicon oxynitride can be used.

[0214] Then, if Figure 4E As shown, by processing the insulating film 156f, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B and the insulating layer 156C are formed.

[0215] Then, if Figure 5A As shown, a conductive film 152f is formed on the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, the conductive layer 151C, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, the insulating layer 156C and the insulating layer 175.

[0216] As the conductive film 152f, for example, a conductive oxide can be used. The conductive film 152f can also have a stacked-layer structure.

[0217] Then, if Figure 5B As shown, the conductive film 152f is processed to form a conductive layer 152R, a conductive layer 152G, a conductive layer 152B and a conductive layer 152C.

[0218] Then, if Figure 5C As shown in FIG. 1 , the organic compound film 103Rf is formed on the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the insulating layer 175. Figure 5C As shown, the organic compound film 103Rf is not formed on the conductive layer 152C.

[0219] Then, if Figure 5C As shown, a sacrificial film 158Rf and a mask film 159Rf are formed.

[0220] By providing the sacrificial film 158Rf on the organic compound film 103Rf, damage to the organic compound film 103Rf during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0221] The sacrificial film 158Rf is made of a film having high resistance to the processing conditions of the organic compound film 103Rf, specifically, a film having a large etching selectivity ratio with the organic compound film 103Rf. The mask film 159Rf is made of a film having a large etching selectivity ratio with the sacrificial film 158Rf.

[0222] In addition, the sacrificial film 158Rf and the mask film 159Rf are formed at a temperature lower than the heat resistance temperature of the organic compound film 103Rf. The substrate temperature when forming the sacrificial film 158Rf and the mask film 159Rf is typically 100° C. to 200° C., preferably 100° C. to 150° C., and more preferably 100° C. to 120° C. The light-emitting device of one embodiment of the present invention includes the first compound, so that a display device with high display quality can be provided even after a higher temperature heating process.

[0223] As the sacrificial film 158Rf and the mask film 159Rf, a film that can be removed by a wet etching method or a dry etching method is preferably used.

[0224] The sacrificial film 158Rf formed in contact with the organic compound film 103Rf is preferably formed by a formation method that causes less damage to the organic compound film 103Rf than the mask film 159Rf. For example, ALD or vacuum deposition is more preferable than sputtering.

[0225] As the sacrificial film 158Rf and the mask film 159Rf, for example, one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, and an inorganic insulating film can be used.

[0226] As the sacrificial film 158Rf and the mask film 159Rf, for example, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing the metal materials can be used. In particular, low melting point materials such as aluminum and silver are preferably used. By using a metal material that can shield ultraviolet rays as one or both of the sacrificial film 158Rf and the mask film 159Rf, it is possible to suppress ultraviolet rays from irradiating the organic compound film 103Rf during pattern exposure and suppress the degradation of the organic compound film 103Rf, which is preferred.

[0227] In addition, as the sacrificial film 158Rf and the mask film 159Rf, metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), indium tin oxide containing silicon, etc. can be used respectively.

[0228] Note that element M (M is one or more of aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten and magnesium) can also be used in the above-mentioned metal oxides instead of the above-mentioned gallium.

[0229] For example, it is preferable to use a semiconductor material such as silicon or germanium as the sacrificial film 158Rf and the mask film 159Rf because this material has high affinity with the semiconductor manufacturing process. Alternatively, a compound containing the above semiconductor material may be used.

[0230] Various inorganic insulating films can be used as the sacrificial film 158Rf and the mask film 159Rf, respectively. In particular, an oxide insulating film is preferred because it has higher adhesion to the organic compound film 103Rf than a nitride insulating film.

[0231] Then, if Figure 5C As shown, a resist mask 190R is formed. The resist mask 190R can be formed by applying a photosensitive material (photoresist), exposing and developing the same.

[0232] Resist mask 190R is provided at a position overlapping conductive layer 152R. Resist mask 190R is preferably provided also at a position overlapping conductive layer 152C. This can prevent conductive layer 152C from being damaged during the manufacturing process of the display device.

[0233] Then, if Figure 5DAs shown, a portion of the mask film 159Rf is removed using the resist mask 190R to form a mask layer 159R. The mask layer 159R remains on the conductive layer 152R and the conductive layer 152C. Then, the resist mask 190R is removed. Next, a portion of the sacrificial film 158Rf is removed using the mask layer 159R as a mask (also referred to as a hard mask) to form a sacrificial layer 158R.

[0234] By using the wet etching method, the damage to the organic compound film 103Rf during the processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced compared to the case of using the dry etching method. When the wet etching method is used, for example, it is preferable to use an alkaline aqueous solution such as a developer, an aqueous solution of tetramethylammonium hydroxide (TMAH), or an acidic aqueous solution such as a chemical solution using dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixed liquid thereof.

[0235] In addition, when dry etching is used in processing the sacrificial film 158Rf, degradation of the organic compound film 103Rf can be suppressed by not using an oxygen-containing gas as an etching gas.

[0236] The resist mask 190R can be removed by the same method as the resist mask 191 .

[0237] Then, if Figure 5D As shown, the organic compound film 103Rf is processed to form the first layer 135R. For example, the mask layer 159R and the sacrificial layer 158R are used as a hard mask and a portion of the organic compound film 103Rf is removed, thereby forming the first layer 135R.

[0238] Therefore, if Figure 5D As shown, the stacked structure of the first layer 135R, the sacrificial layer 158R and the mask layer 159R remains on the conductive layer 152R. In addition, the conductive layer 152G and the conductive layer 152B are exposed.

[0239] The processing of the organic compound film 103Rf is preferably performed using anisotropic etching, and anisotropic dry etching is particularly preferred. Alternatively, wet etching may be used.

[0240] When the dry etching method is used, by not using an oxygen-containing gas as an etching gas, degradation of the organic compound film 103Rf can be suppressed.

[0241] In addition, an oxygen-containing gas may be used as the etching gas. When the etching gas contains oxygen, the etching rate can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficient etching rate. Therefore, damage to the organic compound film 103Rf can be suppressed. In addition, defects such as adhesion of reaction products generated during etching can be suppressed.

[0242] When using the dry etching method, for example, it is preferred to use a gas containing one or more of the 18th group elements such as H2, CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, He, Ar as the etching gas. Alternatively, it is preferred to use a gas containing one or more of the above gases and oxygen as the etching gas. Alternatively, oxygen gas may be used as the etching gas.

[0243] Then, if Fig. 6A As shown, an organic compound film 103Gf which will later become a first layer 135G is formed.

[0244] The organic compound film 103Gf can be formed using the same method as that which can be used for forming the organic compound film 103Rf. In addition, the organic compound film 103Gf can have the same structure as that of the organic compound film 103Rf.

[0245] Then, if Fig. 6A As shown, a sacrificial film 158Gf and a mask film 159Gf are sequentially formed. Then, a resist mask 190G is formed. The materials and forming methods of the sacrificial film 158Gf and the mask film 159Gf are the same as those applicable to the sacrificial film 158Rf and the mask film 159Rf. The materials and forming methods of the resist mask 190G are the same as those applicable to the resist mask 190R.

[0246] The resist mask 190G is formed at a position overlapping with the conductive layer 152G.

[0247] Then, if Figure 6B As shown, a portion of the mask film 159Gf is removed using the resist mask 190G, thereby forming a mask layer 159G. The mask layer 159G remains on the conductive layer 152G. Then, the resist mask 190G is removed. Next, using the mask layer 159G as a mask, a portion of the sacrificial film 158Gf is removed, thereby forming a sacrificial layer 158G. Next, the organic compound film 103Gf is processed to form the first layer 135G.

[0248] Then, if Figure 6C As shown, an organic compound film 103Bf is formed.

[0249] The organic compound film 103Bf can be formed using the same method as that which can be used for forming the organic compound film 103Rf. In addition, the organic compound film 103Bf can have the same structure as that of the organic compound film 103Rf.

[0250] Then, if Figure 6CAs shown, a sacrificial film 158Bf and a mask film 159Bf are sequentially formed. Then, a resist mask 190B is formed. The materials and forming methods of the sacrificial film 158Bf and the mask film 159Bf are the same as those of the sacrificial film 158Rf and the mask film 159Rf. The materials and forming methods of the resist mask 190B are the same as those of the resist mask 190R.

[0251] The resist mask 190B is formed at a position overlapping with the conductive layer 152B.

[0252] Then, if Fig.6D As shown, a portion of the mask film 159Bf is removed using the resist mask 190B, thereby forming the mask layer 159B. The mask layer 159B remains on the conductive layer 152B. Then, the resist mask 190B is removed. Next, using the mask layer 159B as a mask, a portion of the sacrificial film 158Bf is removed, thereby forming the sacrificial layer 158B. Next, the organic compound film 103Bf is processed to form the first layer 135B. For example, using the mask layer 159B and the sacrificial layer 158B as a hard mask, a portion of the organic compound film 103Bf is removed, thereby forming the first layer 135B.

[0253] Therefore, if Fig.6D As shown, the stacked structure of the first layer 135B, the sacrificial layer 158B and the mask layer 159B remains on the conductive layer 152B. In addition, the mask layer 159R and the mask layer 159G are exposed.

[0254] Note that the side surfaces of the first layer 135R, the first layer 135G, and the first layer 135B are preferably perpendicular or substantially perpendicular to the formed surface. For example, the angle formed by the formed surface and these side surfaces is preferably not less than 60 degrees and not more than 90 degrees.

[0255] As described above, the distance between two adjacent layers of the first layer 135R, the first layer 135G, and the first layer 135B formed using the photolithography method can be reduced to less than 8μm, less than 5μm, less than 3μm, less than 2μm, or less than 1μm. Here, for example, the distance can be specified based on the distance between the relative ends of two adjacent layers of the first layer 135R, the first layer 135G, and the first layer 135B. In this way, by reducing the distance between the island-shaped organic compound layers, a display device with high clarity and a large aperture ratio can be provided. In addition, the distance between the first electrodes of adjacent light-emitting devices can be reduced, for example, to less than 10μm, less than 8μm, less than 5μm, less than 3μm, or less than 2μm. In addition, the distance between the first electrodes of adjacent light-emitting devices is preferably greater than 2μm and less than 5μm.

[0256] Then, if Fig. 7AAs shown, mask layer 159R, mask layer 159G and mask layer 159B are preferably removed.

[0257] The mask layer removal step may be performed by the same method as the mask layer processing step. In particular, by using a wet etching method, damage to the first layer 135 during the mask layer removal can be reduced compared to the case of using a dry etching method.

[0258] Alternatively, the mask layer may be removed by dissolving it in a polar solvent such as water or alcohol. Examples of the alcohol include ethanol, methanol, isopropyl alcohol (IPA), and glycerin.

[0259] After removing the mask layer, a drying treatment may be performed to remove surface water. For example, a heat treatment may be performed in an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment may be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 120°C. By adopting a reduced pressure atmosphere, drying can be performed at a lower temperature, so it is preferred.

[0260] Then, if Figure 7B As shown, an inorganic insulating film 125f is formed.

[0261] Then, if Figure 7C As shown in FIG. 1 , an insulating film 127 f which will later become an insulating layer 127 is formed on the inorganic insulating film 125 f.

[0262] The substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower.

[0263] As the inorganic insulating film 125f, it is preferable to form an insulating film with a thickness of 3 nm, 5 nm or 10 nm and 200 nm, 150 nm, 100 nm or 50 nm within the above-mentioned substrate temperature range.

[0264] The inorganic insulating film 125f is preferably formed by, for example, the ALD method. The ALD method is preferred because it can reduce deposition damage and deposit a film with high coverage. As the inorganic insulating film 125f, for example, an aluminum oxide film is preferably formed by the ALD method.

[0265] The insulating film 127f is preferably formed by the wet deposition method described above. The insulating film 127f is preferably formed by, for example, a photosensitive material by spin coating, and more specifically, is preferably formed by using a photosensitive resin composition containing an acrylic resin.

[0266] Next, exposure is performed to sensitize a portion of the insulating film 127f with visible light or ultraviolet light. The insulating layer 127 is formed in a region sandwiched between any two of the conductive layer 152R, the conductive layer 152G, and the conductive layer 152B and around the conductive layer 152C.

[0267] The width of the insulating layer 127 to be formed later can be controlled by the region in which the insulating film 127f is exposed. In this embodiment, the insulating layer 127 is processed so that the insulating layer 127 has a portion overlapping with the top surface of the conductive layer 151.

[0268] The light used for exposure preferably includes i-line (wavelength: 365 nm). Alternatively, the light used for exposure may include at least one of g-line (wavelength: 436 nm) and h-line (wavelength: 405 nm).

[0269] Then, if Fig. 8A As shown, development is performed to remove the exposed region in the insulating film 127f, thereby forming the insulating layer 127a.

[0270] Then, if Figure 8B As shown, the insulating layer 127a is used as a mask to perform etching to remove a portion of the inorganic insulating film 125f, thereby reducing the thickness of a portion of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B. As a result, the inorganic insulating layer 125 is formed under the insulating layer 127a. In addition, the surface of the thin portion of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B is exposed. Hereinafter, the etching process using the insulating layer 127a as a mask is sometimes referred to as the first etching process.

[0271] The first etching process can be performed by dry etching or wet etching. When the inorganic insulating film 125f is deposited using the same material as the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, the first etching process can be performed at once, which is preferable.

[0272] When dry etching is performed, chlorine-based gas is preferably used. As the chlorine-based gas, one gas selected from Cl2, BCl3, SiCl4, and CCl4, or a mixture of two or more gases, can be used. In addition, one gas selected from oxygen gas, hydrogen gas, helium gas, and argon gas, or a mixture of two or more gases, can be appropriately added to the above-mentioned chlorine-based gas. By utilizing dry etching, thin regions of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B can be formed with excellent in-plane uniformity.

[0273] As a dry etching device, a dry etching device having a high-density plasma source can be used. As a dry etching device having a high-density plasma source, for example, an inductively coupled plasma (ICP: Inductively Coupled Plasma) etching device can be used. Alternatively, a capacitively coupled plasma (CCP: Capacitively Coupled Plasma) etching device including parallel plate electrodes can be used.

[0274] In addition, it is preferred to perform the first etching process using wet etching. By using the wet etching method, the damage to the first layer 135R, the first layer 135G, and the first layer 135B can be reduced compared to the case of using the dry etching method. For example, an alkaline solution can be used for wet etching. For example, TMAH can be used as an alkaline solution in the wet etching of an aluminum oxide film. In addition, an acidic solution containing a fluoride can also be used. In this case, wet etching can be performed using a puddle method. Note that when the inorganic insulating film 125f is deposited using the same material as the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, it is preferred because the above-mentioned etching process can be performed together.

[0275] In the first etching process, the sacrificial layers 158R, 158G, and 158B are not completely removed, and the etching process is stopped in a state where the thickness is reduced. In this way, by leaving the corresponding sacrificial layers 158R, 158G, and 158B on the first layers 135R, 135G, and 135B, it is possible to prevent the first layers 135R, 135G, and 135B from being damaged in the subsequent process.

[0276] Next, the entire substrate is preferably exposed to visible light or ultraviolet light to irradiate the insulating layer 127a. The energy density of this exposure is preferably greater than 0 mJ / cm 2 And 800mJ / cm 2 Below, more preferably greater than 0 mJ / cm 2 And 500mJ / cm 2 By performing such exposure after development, the transparency of the insulating layer 127a can be improved. In addition, the substrate temperature required for heat treatment in a later step for deforming the insulating layer 127a into a tapered shape can be reduced.

[0277] Here, by providing an oxygen blocking insulating layer (for example, an aluminum oxide film) as the sacrificial layers 158R, 158G, and 158B, diffusion of oxygen into the first layers 135R, 135G, and 135B can be reduced.

[0278] Next, a heat treatment (also called post-baking) is performed. By performing the heat treatment, the insulating layer 127a can be deformed into an insulating layer 127 having a tapered shape on its side. Figure 8C ). The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 130°C. The heating atmosphere can be either an air atmosphere or an inert gas atmosphere. In addition, the heating atmosphere can be either an air atmosphere or a reduced pressure atmosphere. Thus, the adhesion between the insulating layer 127 and the inorganic insulating layer 125 can be improved, and the corrosion resistance of the insulating layer 127 can also be improved.

[0279] In the first etching process, the sacrificial layers 158R, 158G, and 158B are not completely removed, but the sacrificial layers 158R, 158G, and 158B are left thin, so that the first layers 135R, 135G, and 135B can be prevented from being damaged and deteriorated during the heating process. Thus, the reliability of the light-emitting device can be improved.

[0280] Then, if Fig.9A As shown, the insulating layer 127 is used as a mask to perform etching to remove a portion of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B. As a result, an opening is formed in each of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, and the top surface of the first layer 135R, the first layer 135G, the first layer 135B, and the conductive layer 152C is exposed. Note that this etching process may be referred to as a second etching process below.

[0281] The end of the inorganic insulating layer 125 is covered with the insulating layer 127. Fig.9A An example is shown in which a portion of the end portion of the sacrificial layer 158G (specifically, the tapered portion formed by the first etching process) is covered with the insulating layer 127 and the tapered portion formed by the second etching process is exposed.

[0282] In addition, the second etching process is preferably performed by wet etching. By using the wet etching method, the damage to the first layer 135R, the first layer 135G, and the first layer 135B can be reduced compared with the case of using the dry etching method. For example, the wet etching can be performed using an alkaline solution or an acidic solution. In order to prevent the first layer 135 from dissolving, it is preferable to use an aqueous solution.

[0283] Then, if Fig. 9BAs shown in FIG. 3 , the second electrode 102 is formed on the first layer 135R, the first layer 135G, the first layer 135B, the conductive layer 152C and the insulating layer 127. The second electrode 102 can be formed by using a method such as sputtering or vacuum evaporation. At this time, as shown in FIG. 3 , the first layer 135 can also be formed into a stacked structure of the first layer 135 and the common layer 136, and the second electrode 102 is formed thereon.

[0284] Then, if Fig. 9C As shown, a protective layer 131 is formed on the second electrode 102. The protective layer 131 can be formed by vacuum evaporation, sputtering, CVD, ALD or other methods.

[0285] Next, the substrate 120 is bonded to the protective layer 131 using the resin layer 122, whereby a display device can be manufactured. As described above, in the method for manufacturing a display device according to one embodiment of the present invention, the insulating layer 156 is provided so as to include a region overlapping with the side surface of the conductive layer 151, and the conductive layer 152 is formed so as to cover the conductive layer 151 and the insulating layer 156. Thus, the yield of the display device can be improved, and the occurrence of defects can be suppressed.

[0286] As described above, in a method for manufacturing a display device of one embodiment of the present invention, the island-shaped first layer 135R, the island-shaped first layer 135G, and the island-shaped first layer 135B are not formed using a high-precision metal mask but are formed by depositing a film on one surface and then processing it, so that the island layer can be formed with a uniform thickness. In addition, a high-definition display device or a display device with a high aperture ratio can be realized. In addition, even if the clarity or aperture ratio is high and the distance between sub-pixels is extremely short, the first layer 135R, the first layer 135G, and the first layer 135B can be prevented from contacting each other in adjacent sub-pixels. Therefore, leakage current can be suppressed between sub-pixels. Thus, crosstalk can be prevented and a display device with extremely high contrast can be realized. In addition, even a display device including a series-type light-emitting device manufactured using a photolithography method can provide a display device with good characteristics.

[0287] (Implementation 4) In this embodiment, a display device which is one embodiment of the present invention is described.

[0288] The display device of this embodiment can be a high-definition display device. Therefore, for example, the display device of this embodiment can be used as a display unit of information terminal devices (wearable devices) such as watch-type and bracelet-type devices, and a display unit of wearable devices that can be worn on the head such as VR devices such as head-mounted displays (HMDs) and glasses-type AR devices.

[0289] In addition, the display device of this embodiment can be a high-resolution display device or a large display device. Therefore, for example, the display device of this embodiment can be used as a display portion of the following devices: electronic devices with large screens such as television devices, desktop or notebook personal computers, displays for computers, etc., digital signage and large game machines such as pinball machines, etc.; digital cameras; digital video cameras; digital photo frames; mobile phones; portable game consoles; portable information terminals; and sound reproduction devices.

[0290] [Display module] Fig. 10A 2 is a perspective view of a display module 280. The display module 280 includes a display device 100A and an FPC 290. Note that the display device included in the display module 280 is not limited to the display device 100A, and may be any of the display device 100B and the display device 100E to be described later.

[0291] The display module 280 includes a substrate 291 and a substrate 292. The display module 280 includes a display portion 281. The display portion 281 is an image display region in the display module 280, and light from each pixel provided in a pixel portion 284 described below can be viewed.

[0292] Fig. 10B 2 is a perspective view of a structure on one side of a substrate 291. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. In addition, a terminal portion 285 for connecting to the FPC 290 is provided on a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 is electrically connected to the circuit portion 282 via a wiring portion 286 composed of a plurality of wirings.

[0293] The pixel portion 284 includes a plurality of pixels 284 a arranged periodically. Fig. 10B An enlarged view of one pixel 284a is shown on the right side of FIG. The pixel 284a can adopt the various structures described in the above embodiment. Fig. 10B An example is shown in which the pixel 284 a has the same structure as the pixel 178 shown in FIG. 3 .

[0294] The pixel circuit portion 283 includes a plurality of pixel circuits 283 a arranged periodically.

[0295] One pixel circuit 283a controls driving of a plurality of elements included in one pixel 284a.

[0296] The circuit unit 282 includes a circuit for driving each pixel circuit 283a of the pixel circuit unit 283. For example, it preferably includes one or both of a gate line driving circuit and a source line driving circuit. In addition, it may include at least one of a calculation circuit, a storage circuit, and a power supply circuit.

[0297] The FPC 290 is used as wiring for supplying video signals, power supply potential, and the like from the outside to the circuit portion 282. Alternatively, an IC may be mounted on the FPC 290.

[0298] The display module 280 may have a structure in which one or both of the pixel circuit portion 283 and the circuit portion 282 are stacked on the lower side of the pixel portion 284 , so that the display portion 281 may have an extremely high aperture ratio (effective display area ratio).

[0299] This high-definition display module 280 is suitable for use in VR devices such as HMD or glasses-type AR devices. For example, because the display module 280 has a very high-definition display unit 281, in a structure where the display unit of the display module 280 is viewed through a lens, even if the display unit is magnified by the lens, the user cannot see the pixels, thereby achieving a highly immersive display. In addition, the display module 280 can also be applied to electronic devices with a relatively small display unit.

[0300] [Display device 100A] Fig.11A The display device 100A shown includes a substrate 301 , a light emitting device 130R, a light emitting device 130G, a light emitting device 130B, a capacitor 240 , and a transistor 310 .

[0301] Substrate 301 is equivalent to Fig. 10A and Fig. 10B The transistor 310 is a transistor having a channel formation region in the substrate 301. As the substrate 301, for example, a semiconductor substrate such as a single crystal silicon substrate can be used. The transistor 310 includes a portion of the substrate 301, a conductive layer 311, a low resistance region 312, an insulating layer 313 and an insulating layer 314. The conductive layer 311 is used as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and is used as a gate insulating layer. The low resistance region 312 is a region doped with impurities in the substrate 301 and is used as a source or a drain. The insulating layer 314 covers the side of the conductive layer 311.

[0302] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0303] In addition, an insulating layer 261 is provided to cover the transistor 310 , and the capacitor 240 is provided over the insulating layer 261 .

[0304] Capacitor 240 includes conductive layer 241, conductive layer 245, and insulating layer 243 therebetween. Conductive layer 241 serves as one electrode in capacitor 240, conductive layer 245 serves as the other electrode in capacitor 240, and insulating layer 243 serves as a dielectric of capacitor 240.

[0305] The conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and the drain of the transistor 310 through the plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided in a manner covering the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 via the insulating layer 243.

[0306] An insulating layer 255 is provided to cover the capacitor 240, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. The light emitting devices 130R, 130G, and 130B are provided on the insulating layer 175. An insulator is provided in a region between adjacent light emitting devices.

[0307] The insulating layer 156R is provided so as to include a region overlapping with the side surface of the conductive layer 151R, the insulating layer 156G is provided so as to include a region overlapping with the side surface of the conductive layer 151G, and the insulating layer 156B is provided so as to include a region overlapping with the side surface of the conductive layer 151B. In addition, the conductive layer 152R is provided so as to cover the conductive layer 151R and the insulating layer 156R, the conductive layer 152G is provided so as to cover the conductive layer 151G and the insulating layer 156G, and the conductive layer 152B is provided so as to cover the conductive layer 151B and the insulating layer 156B. The sacrificial layer 158R is located on the first layer 135R, the sacrificial layer 158G is located on the first layer 135G, and the sacrificial layer 158B is located on the first layer 135B.

[0308] The conductive layers 151R, 151G, and 151B are electrically connected to one of the source and the drain of the transistor 310 via the plugs 256 embedded in the insulating layers 243, 255, 174, and 175, the conductive layer 241 embedded in the insulating layer 254, and the plug 271 embedded in the insulating layer 261. Various conductive materials can be used for the plugs.

[0309] In addition, a protective layer 131 is provided on the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B. The substrate 120 is bonded to the protective layer 131 by the resin layer 122. The details of the components of the light emitting device 130 to the substrate 120 can be referred to Embodiment 3. The substrate 120 corresponds to Fig. 10A substrate 292.

[0310] Fig. 11B Show Fig.11A A modified example of the display device 100A shown. Fig. 11B The display device shown includes a coloring layer 132R, a coloring layer 132G, and a coloring layer 132B, and the light emitting device 130 has a region overlapping one of the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B. Fig. 11B In the display device shown, the light emitting device 130 can emit white light, for example. In addition, for example, the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B can transmit red light, green light, and blue light, respectively.

[0311] [Display device 100B] Fig.12 A perspective view showing a display device 100B is shown. Fig.13 A cross-sectional view of the display device 100B is shown.

[0312] The display device 100B has a structure in which a substrate 352 and a substrate 351 are bonded together. Fig.12 In FIG. 3 , the substrate 352 is indicated by a dotted line.

[0313] The display device 100B includes a pixel portion 177 , a connection portion 140 , a circuit 356 , a wiring 355 , and the like. Fig.12 FIG. 1 shows an example in which the display device 100B is equipped with the IC 354 and the FPC 353. Fig.12 The structure shown is called a display module including the display device 100B, IC (integrated circuit) and FPC. Here, the substrate of the display device with a connector such as FPC mounted thereon or the substrate with IC mounted thereon is called a display module.

[0314] The connection part 140 is disposed outside the pixel part 177. There may be one or more connection parts 140. In the connection part 140, the common electrode of the light emitting device is electrically connected to the conductive layer, and power can be supplied to the common electrode.

[0315] As the circuit 356, for example, a scan line driver circuit can be used.

[0316] The wiring 355 has a function of supplying a signal and power to the pixel portion 177 and the circuit 356. The signal and power are input to the wiring 355 from the outside through the FPC 353 or are input to the wiring 355 from the IC 354.

[0317] Fig.12An example of providing IC354 on substrate 351 by COG (Chip On Glass) method or COF (Chip On Film) method is shown. As IC354, for example, an IC including a scanning line driving circuit or a signal line driving circuit can be used. Note that the display device 100B and the display module do not necessarily have to be provided with an IC. In addition, for example, the IC can also be mounted on an FPC by using a COF method.

[0318] Fig.13 An example of a cross section of a portion of the region including the FPC 353 , a portion of the circuit 356 , a portion of the pixel portion 177 , a portion of the connection portion 140 , and a portion of the region including the end portion of the display device 100B is shown.

[0319] [Display device 100C] Fig.13 The display device 100C shown includes a transistor 201 , a transistor 205 , a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, and a light-emitting device 130B, etc., between a substrate 351 and a substrate 352 .

[0320] For details of the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B, reference may be made to Embodiment 1.

[0321] The light emitting device 130R includes a conductive layer 224R, a conductive layer 151R on the conductive layer 224R, and a conductive layer 152R on the conductive layer 151R. The light emitting device 130G includes a conductive layer 224G, a conductive layer 151G on the conductive layer 224G, and a conductive layer 152G on the conductive layer 151G. The light emitting device 130B includes a conductive layer 224B, a conductive layer 151B on the conductive layer 224B, and a conductive layer 152B on the conductive layer 151B.

[0322] The conductive layer 224R is connected to the conductive layer 222b included in the transistor 205 through an opening provided in the insulating layer 214. An end of the conductive layer 151R is located outside an end of the conductive layer 224R. The insulating layer 156R is provided so as to include a region in contact with a side surface of the conductive layer 151R, and the conductive layer 152R is provided so as to cover the conductive layer 151R and the insulating layer 156R.

[0323] The conductive layer 224G, conductive layer 151G, conductive layer 152G, and insulating layer 156G in the light-emitting device 130G and the conductive layer 224B, conductive layer 151B, conductive layer 152B, and insulating layer 156B in the light-emitting device 130B are the same as the conductive layer 224R, conductive layer 151R, conductive layer 152R, and insulating layer 156R in the light-emitting device 130R, so detailed description is omitted.

[0324] Concave portions are formed in conductive layer 224R, conductive layer 224G, and conductive layer 224B so as to cover the openings provided in insulating layer 214. The concave portions are filled with layer 128.

[0325] The layer 128 has the function of flattening the concave portions of the conductive layers 224R, 224G, and 224B. The conductive layers 151R, 151G, and 151B electrically connected to the conductive layers 224R, 224G, and 224B are provided on the conductive layers 224R, 224G, and 224B, and the layer 128. Therefore, the region overlapping the concave portions of the conductive layers 224R, 224G, and 224B can also be used as a light-emitting region, and the aperture ratio of the pixel can be increased.

[0326] Layer 128 may be an insulating layer or a conductive layer. Layer 128 may be formed of various inorganic insulating materials, organic insulating materials, and conductive materials as appropriate. In particular, layer 128 is preferably formed of an insulating material, and more preferably formed of an organic insulating material. Layer 128 may be formed of, for example, the organic insulating material that can be used for insulating layer 127.

[0327] A protective layer 131 is provided on the light emitting device 130R, the light emitting device 130G and the light emitting device 130B. The protective layer 131 and the substrate 352 are bonded by an adhesive layer 142. The substrate 352 is provided with a light shielding layer 157. The sealing of the light emitting device 130 may adopt a solid sealing structure or a hollow sealing structure. Fig.13 In the embodiment, the space between the substrate 352 and the substrate 351 is filled with the adhesive layer 142, that is, a solid sealing structure is adopted. Alternatively, the space may be filled with an inert gas (nitrogen or argon, etc.), that is, a hollow sealing structure is adopted. In this case, the adhesive layer 142 may also be arranged in a manner that does not overlap with the light-emitting device. In addition, a resin different from the adhesive layer 142 arranged in a frame shape may be used to fill the space.

[0328] Fig.13 The following example is shown: the connection portion 140 includes a conductive layer 224C processed from the same conductive film as the conductive layers 224R, 224G, and 224B, a conductive layer 151C processed from the same conductive film as the conductive layers 151R, 151G, and 151B, and a conductive layer 152C processed from the same conductive film as the conductive layers 152R, 152G, and 152B. In addition, Fig.13 An example is shown in which the insulating layer 156C is provided so as to include a region overlapping with the side surface of the conductive layer 151C.

[0329] The display device 100B is a top emission type display device. The light emitting device emits light to the substrate 352 side. The substrate 352 preferably uses a material with high transmittance to visible light. When the light emitting element emits infrared light or near-infrared light, it is preferably used a material with high transmittance to them. The first electrode (pixel electrode) contains a material that reflects visible light, and the counter electrode (second electrode 102) contains a material that transmits visible light.

[0330] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are sequentially provided on the substrate 351. A portion of the insulating layer 211 is used as a gate insulating layer of each transistor. A portion of the insulating layer 213 is used as a gate insulating layer of each transistor. The insulating layer 215 is provided in a manner covering the transistor. The insulating layer 214 is provided in a manner covering the transistor and is used as a planarization layer. In addition, there is no particular limitation on the number of gate insulating layers and the number of insulating layers covering the transistor, and it can be one or more than two.

[0331] As the insulating layer 211 , the insulating layer 213 , and the insulating layer 215 , an inorganic insulating film is preferably used.

[0332] As the insulating layer 214 serving as a planarizing layer, an organic insulating layer is preferably used.

[0333] The transistor 201 and the transistor 205 include: a conductive layer 221 used as a gate; an insulating layer 211 used as a gate insulating layer; a conductive layer 222a and a conductive layer 222b used as a source and a drain; a semiconductor layer 231; an insulating layer 213 used as a gate insulating layer; and a conductive layer 223 used as a gate.

[0334] A connection portion 204 is provided in a region of the substrate 351 that is not overlapped by the substrate 352. In the connection portion 204, the wiring 355 is electrically connected to the FPC 353 through the conductive layer 166 and the connection layer 242. The following example is shown: the conductive layer 166 has a laminated structure of a conductive film obtained by processing the same conductive film as the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B, a conductive film obtained by processing the same conductive film as the conductive layer 151R, the conductive layer 151G, and the conductive layer 151B, and a conductive film obtained by processing the same conductive film as the conductive layer 152R, the conductive layer 152G, and the conductive layer 152B. The conductive layer 166 is exposed on the top surface of the connection portion 204. Therefore, the connection portion 204 can be electrically connected to the FPC 353 through the connection layer 242.

[0335] It is preferable to provide a light shielding layer 157 on the surface of the substrate 352 on the substrate 351 side. The light shielding layer 157 may be provided between adjacent light emitting devices, in the connection portion 140 and the circuit 356, etc. In addition, various optical members may be arranged outside the substrate 352.

[0336] The substrate 351 and the substrate 352 can each adopt a material that can be used for the substrate 120 .

[0337] As the adhesive layer 142 , a material that can be used for the resin layer 122 can be used.

[0338] As the connection layer 242 , an anisotropic conductive film (ACF: Anisotropic Conductive Film), anisotropic conductive paste (ACP: Anisotropic Conductive Paste), or the like can be used.

[0339] [Display device 100D] Fig.14 The display device 100D shown in FIG. Fig.13 The main difference of the illustrated display device 100A is that the display device 100D is a bottom emission type display device.

[0340] Light emitted by the light emitting device is emitted to the side of the substrate 351. It is preferable to use a material having high transmittance to visible light for the substrate 351. On the other hand, there is no limitation on the transmittance of the material used for the substrate 352.

[0341] A light-shielding layer 117 is preferably formed between the substrate 351 and the transistor 201 and between the substrate 351 and the transistor 205 . Fig.14 An example is shown in which a light-shielding layer 117 is provided over a substrate 351 , an insulating layer 153 is provided over the light-shielding layer 117 , and transistors 201 , 205 , and the like are provided over the insulating layer 153 .

[0342] The light emitting device 130R includes a conductive layer 112R, a conductive layer 126R on the conductive layer 112R, and a conductive layer 129R on the conductive layer 126R.

[0343] The light emitting device 130B includes a conductive layer 112B, a conductive layer 126B on the conductive layer 112B, and a conductive layer 129B on the conductive layer 126B.

[0344] The conductive layers 112R, 112B, 126R, 126B, 129R, and 129B are all made of a material having high transmittance to visible light. It is preferable to use a material that reflects visible light as the second electrode 102 .

[0345] Note that although Fig.14 Although the light emitting device 130G is not shown in the figure, the light emitting device 130G is also provided.

[0346] in addition, Fig.14 The example in which the top surface of the layer 128 has a flat portion is shown, but the shape of the layer 128 is not particularly limited.

[0347] [Display device 100E] Fig.15 The display device 100E shown is Fig.13 In the variation example of the display device 100B shown, the display device 100E is different from the display device 100B mainly in that the display device 100E includes a coloring layer 132R, a coloring layer 132G, and a coloring layer 132B.

[0348] In the display device 100E, the light emitting device 130 has a region overlapping one of the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B. The coloring layer 132R, the coloring layer 132G, and the coloring layer 132B may be provided on a surface of the substrate 352 on the substrate 351 side. An end portion of the coloring layer 132R, an end portion of the coloring layer 132G, and an end portion of the coloring layer 132B may overlap the light shielding layer 157.

[0349] In the display device 100E, the light emitting device 130 may emit white light, for example. In addition, for example, the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B may transmit red light, green light, and blue light, respectively. In addition, the display device 100E may also adopt a structure in which the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B are provided between the protective layer 131 and the adhesive layer 142.

[0350] Fig.13 and Fig.15 The example in which the top surface of the layer 128 has a flat portion is shown, but the shape of the layer 128 is not particularly limited.

[0351] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0352] (Implementation 5) In this embodiment, an electronic device which is one embodiment of the present invention is described.

[0353] The electronic device of this embodiment includes a display device of one embodiment of the present invention in a display unit. The display device of one embodiment of the present invention has high display performance and can easily achieve high definition and high resolution. Therefore, it can be used in the display unit of various electronic devices.

[0354] Electronic devices include, for example, television sets, desktop or notebook personal computers, displays for computers, etc., digital signage, large-scale game consoles such as pinball machines, and other electronic devices with larger screens, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals, sound reproduction devices, and the like.

[0355] In particular, since the display device of one embodiment of the present invention can improve the clarity, it can be suitably used in electronic devices including a smaller display unit. Examples of such electronic devices include watch-type and bracelet-type information terminal devices (wearable devices), wearable devices that can be worn on the head such as VR devices such as head-mounted displays, glasses-type AR devices, and MR devices.

[0356] The electronic device of this embodiment may also include a sensor (the sensor has the function of measuring the following factors: force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, electricity, radiation, flow, humidity, inclination, vibration, smell or infrared).

[0357] Reference FIG. 16A to FIG. 16D An example of a wearable device that can be worn on the head is described.

[0358] Fig.16A The electronic device 700A shown and Fig. 16B The electronic devices 700B shown include a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical components 753, a frame 757 and a pair of nose pads 758.

[0359] The display device of one embodiment of the present invention can be applied to the display panel 751. Thus, a highly reliable electronic device can be realized.

[0360] Both electronic devices 700A and 700B can project the image displayed by display panel 751 onto display region 756 in optical member 753. Since optical member 753 is light-transmissive, the user can see the image displayed on the display region superimposed on the transmitted image seen through optical member 753.

[0361] The electronic device 700A and the electronic device 700B may also be provided with a camera capable of photographing the front as an imaging unit. In addition, by providing an acceleration sensor such as a gyro sensor on the electronic device 700A and the electronic device 700B, the user's head orientation can be detected and an image corresponding to the direction can be displayed on the display area 756.

[0362] The communication unit includes a wireless communication device, through which, for example, a video signal can be supplied. In addition, the communication unit may include a connector to which a cable for supplying the video signal and the power supply potential can be connected, instead of or in addition to the wireless communication device.

[0363] Furthermore, electronic device 700A and electronic device 700B are provided with batteries, and can be charged wirelessly or by wire, or both.

[0364] The housing 721 may also be provided with a touch sensor module.

[0365] As the touch sensor module, various touch sensors can be used. For example, various methods such as electrostatic capacitance, resistance film, infrared, electromagnetic induction, surface acoustic wave, and optical can be used. In particular, it is preferred to use electrostatic capacitance or optical sensors in the touch sensor module.

[0366] Fig. 16C The electronic device 800A shown and Fig.16D The electronic devices 800B shown each include a pair of display portions 820 , a housing 821 , a communication portion 822 , a pair of mounting portions 823 , a control portion 824 , a pair of imaging portions 825 , and a pair of lenses 832 .

[0367] The display device of one embodiment of the present invention can be applied to the display portion 820. This makes it possible to realize an electronic device with high reliability.

[0368] The display unit 820 is provided at a position visible through the lens 832 inside the housing 821. In addition, by displaying different images on each of the pair of display units 820, three-dimensional display using parallax can be performed.

[0369] The electronic device 800A and the electronic device 800B preferably have a mechanism that can adjust the left and right positions of the lens 832 and the display unit 820 so that the lens 832 and the display unit 820 are located at the most appropriate positions according to the position of the user's eyes.

[0370] The user can use the mounting portion 823 to mount the electronic device 800A or the electronic device 800B on the head.

[0371] The imaging unit 825 has a function of acquiring external information. The data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used in the imaging unit 825. In addition, a plurality of cameras can be provided to be able to cope with various viewing angles such as telephoto and wide angle.

[0372] The electronic device 800A may also include a vibration mechanism for use as a bone conduction headset.

[0373] Electronic device 800A and electronic device 800B may both include input terminals. Cables for supplying video signals from a video output device or the like, power for charging a battery provided in the electronic device, and the like may be connected to the input terminals.

[0374] The electronic device according to one embodiment of the present invention may have a function of wirelessly communicating with the earphone 750 .

[0375] In addition, the electronic device may include an earphone unit. Fig. 16B The electronic device 700B shown includes an earphone unit 727. A part of the wiring connecting the earphone unit 727 and the control unit may be arranged inside the housing 721 or the mounting unit 723.

[0376] same, Fig.16D The electronic device 800B shown includes an earphone unit 827. For example, a structure in which the earphone unit 827 and the control unit 824 are connected in a wired manner may be adopted.

[0377] As described above, as electronic devices according to one embodiment of the present invention, both glasses-type (electronic devices 700A and 700B, etc.) and goggles-type (electronic devices 800A and 800B, etc.) are preferable.

[0378] Fig.17A The electronic device 6500 shown is a portable information terminal device that can be used as a smartphone.

[0379] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

[0380] The display device of one embodiment of the present invention can be used as the display portion 6502. Thus, a highly reliable electronic device can be achieved.

[0381] Fig. 17B 65 is a schematic cross-sectional view of an end portion of a housing 6501 on one side of a microphone 6506 .

[0382] A light-transmitting protective component 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, an optical component 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are provided in the space surrounded by the housing 6501 and the protective component 6510.

[0383] The display panel 6511 , the optical member 6512 , and the touch sensor panel 6513 are fixed to the protective member 6510 using an adhesive layer (not shown).

[0384] In a region outside the display portion 6502, a portion of the display panel 6511 is folded back, and the folded back portion is connected to an FPC 6515. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0385] The display panel 6511 may use a flexible display of one embodiment of the present invention. Thus, an extremely lightweight electronic device may be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 may be installed while suppressing the thickness of the electronic device. In addition, by folding a portion of the display panel 6511 to provide a connection portion with the FPC 6515 on the back of the pixel portion, an electronic device with a narrow frame may be realized.

[0386] Fig. 17C An example of a television set is shown. In a television set 7100, a display portion 7000 is incorporated in a housing 7171. Here, a structure in which the housing 7171 is supported by a stand 7173 is shown.

[0387] The display device of one embodiment of the present invention can be used as the display portion 7000. Thus, a highly reliable electronic device can be realized.

[0388] The operation can be performed by using the operating switch provided in the housing 7171 and the remote control operating machine 7151 provided separately. Fig. 17C The operation of television device 7100 is shown.

[0389] Fig.17D 1 shows an example of a notebook personal computer. The notebook personal computer 7200 includes a housing 7211 , a keyboard 7212 , a pointing device 7213 , an external connection port 7214 , and the like. A display portion 7000 is incorporated in the housing 7211 .

[0390] The display device of one embodiment of the present invention can be used as the display portion 7000. Thus, a highly reliable electronic device can be realized.

[0391] Fig.17E and Fig.17F An example of digital signage is shown.

[0392] Fig.17E The digital signage 7300 shown includes a housing 7301, a display unit 7000, a speaker 7303, etc. In addition, an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, etc. may be included.

[0393] Fig.17F The digital signage 7400 is shown to be disposed on a cylindrical pillar 7401. The digital signage 7400 includes a display unit 7000 disposed along a curved surface of the pillar 7401.

[0394] exist Fig.17E and Fig.17F In the embodiment of the present invention, the display device according to one embodiment of the present invention can be used for the display portion 7000. Thus, a highly reliable electronic device can be achieved.

[0395] The larger the display unit 7000 is, the more information can be provided at one time. The larger the display unit 7000 is, the easier it is to attract people's attention, for example, the advertising effect can be improved.

[0396] like Fig.17E and Fig.17F As shown, the digital signage 7300 or the digital signage 7400 can preferably be linked with the information terminal device 7311 or the information terminal device 7411 such as a smart phone carried by the user through wireless communication.

[0397] FIG. 18A to FIG. 18G The electronic device shown includes a housing 9000, a display portion 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connecting terminal 9006, a sensor 9007 (the sensor has the function of measuring the following factors: force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, electricity, radiation, flow, humidity, inclination, vibration, smell or infrared), a microphone 9008, etc.

[0398] FIG. 18A to FIG. 18G The electronic device shown has various functions. For example, it may have the following functions: a function of displaying various information (static images, dynamic images, text images, etc.) on a display unit; a function of a touch panel; a function of displaying a calendar, date, or time, etc.; a function of controlling processing by using various software (programs); a function of wireless communication; a function of reading out programs or data stored in a storage medium and processing them; etc.

[0399] Below, we explain in detail FIG. 18A to FIG. 18G Electronic equipment shown.

[0400] Fig.18A 9171 is a perspective view showing a portable information terminal 9171. The portable information terminal 9171 can be used as a smart phone, for example. Note that a speaker 9003, a connection terminal 9006, a sensor 9007, and the like can also be provided in the portable information terminal 9171. In addition, as the portable information terminal 9171, text or image information can be displayed on multiple surfaces. Fig.18A9050. In addition, information 9051 indicated by a dotted rectangle may be displayed on another surface of the display unit 9001. Examples of information 9051 include information indicating that an email, SNS, or phone call has been received; a title of the email or SNS; a sender's name of the email or SNS; a date; a time; a remaining battery level; and radio wave strength. Alternatively, icon 9050 may be displayed at a location where information 9051 is displayed.

[0401] Fig.18B 9172. The portable information terminal 9172 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, when the portable information terminal 9172 is placed in a jacket pocket, the user can check the information 9053 displayed at a position viewed from above the portable information terminal 9172.

[0402] Fig.18C 9173 is a perspective view showing a tablet terminal 9173. The tablet terminal 9173 can execute various application software such as mobile phone, reading and editing of e-mails and articles, playing music, network communication, computer games, etc. The tablet terminal 9173 includes a display portion 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front of the housing 9000, an operation key 9005 used as an operation button on the left side of the housing 9000, and a connection terminal 9006 on the bottom.

[0403] Fig.18D 9001 is a stereoscopic diagram showing a watch-type portable information terminal 9200. The portable information terminal 9200 can be used, for example, as a smart watch (registered trademark). In addition, the display surface of the display unit 9001 is curved, and a display can be performed along its curved display surface. In addition, the portable information terminal 9200 can perform hands-free calls, for example, by communicating with a headset capable of wireless communication. In addition, by using the connection terminal 9006, the portable information terminal 9200 can perform data transmission or charging with other information terminals. Charging can also be performed by wireless power supply.

[0404] FIG. 18E to FIG. 18G 9201 is a perspective view showing a foldable portable information terminal. Fig.18E is a perspective view of the portable information terminal 9201 in an unfolded state. Figure 18G This is a three-dimensional diagram of the folded state. Fig.18F is from Fig.18E Status and Figure 18GThe portable information terminal 9201 is easy to carry in the folded state, and has a large display area that is seamlessly spliced ​​in the unfolded state, so the display is easy to browse. The display unit 9001 included in the portable information terminal 9201 is supported by three housings 9000 connected by hinges 9055. The display unit 9001 can be bent within a range of a curvature radius of 0.1 mm or more and 150 mm or less, for example.

[0405] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate. [Example 1]

[0406] This example shows the results of investigating the influence of light irradiated to a light-emitting device in an air atmosphere on the characteristics of the light-emitting device after forming the electron transport layer 114. The structural formulas of main compounds used in this example are shown below.

[0407] [Chemical formula 3]

[0408] (Method for manufacturing light emitting device) First, on a glass substrate, a 100 nm thick silver (Ag) as a reflective electrode and an 85 nm thick indium tin oxide containing silicon oxide (ITSO) as a transparent electrode are stacked in sequence from one side of the substrate by sputtering to form a first electrode 101 with a size of 2 mm×2 mm. ITSO is used as an anode and is considered as the first electrode 101 in combination with the stacked structure of Ag.

[0409] Next, as a pretreatment for forming a light-emitting device on the substrate, the surface of the substrate was washed with water.

[0410] Then, the substrate is placed inside the chamber and the pressure is reduced to 10 -4 Pa in a vacuum deposition device, and in a heating chamber in the vacuum deposition device, vacuum baking is performed at a temperature of 170° C. for 60 minutes, and then the substrate is cooled for about 30 minutes.

[0411] Next, the substrate is fixed on a bracket provided in a vacuum evaporation device in a manner such that the surface on which the first electrode 101 is formed faces downward, and N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviated as: PCBBiF) represented by the above structural formula (i) and an electron acceptor material containing fluorine with a molecular weight of 672 (OCHD-003) are co-evaporated on the inorganic insulating film and the first electrode 101 by a vapor deposition method in a weight ratio of 1:0.03 (=PCBBiF:OCHD-003) and a thickness of 10 nm, thereby forming a hole injection layer 111.

[0412] PCBBiF is evaporated on the hole injection layer 111 in a thickness of 25 nm, and then N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviated as: DBfBB1TP) represented by the above structural formula (ii) is evaporated in a thickness of 10 nm to form a hole transport layer 112.

[0413] Next, on the hole transport layer 112, 2,9-di(1-naphthyl)-10-phenylanthracene (abbreviated as: 2αN-αNPhA) represented by the above structural formula (iii) and 3,10-bis[N-(9-phenyl-9H-carbazole-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviated as: 3,10PCA2Nbf(IV)-02) represented by the above structural formula (iv) are co-deposited in a weight ratio of 1:0.015 (=2αN-αNPhA:3,10PCA2Nbf(IV)-02) with a thickness of 20 nm, thereby forming a light-emitting layer 113.

[0414] Then, 2-{3-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviated as: 2mPCCzPDBq) represented by the above structural formula (v) is evaporated in a thickness of 20 nm to form a first electron transport layer, and 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviated as: mPPhen2P) represented by the above structural formula (vi) is evaporated in a thickness of 15 nm to form a second electron transport layer, thereby forming an electron transport layer 114. In addition, the first electron transport layer is also used as a hole blocking layer.

[0415] Then, the light source having the Fig.19 The light of the spectrum "without filter" shown (light from a 10W daylight color LED (LW-10N, a rechargeable LED light with magnet manufactured by HATAYA Smokehouse, Japan)) is then-4 The heat treatment was performed at 110° C. for 1 hour in an atmosphere of 1.5 Pa or less.

[0416] After the heat treatment, lithium fluoride (LiF) and ytterbium (Yb) are co-evaporated in a volume ratio of 1:0.5 (=LiF:Yb) and a thickness of 1.5 nm to form an electron injection layer 115, and then silver (Ag) and magnesium (Mg) are co-evaporated in a volume ratio of 1:0.1 and a thickness of 15 nm to form a second electrode 102. In addition, 4,4',4"-(benzene-1,3,5-triyl)tris(dibenzothiophene) (abbreviated as: DBT3P-II) represented by the above structural formula (vii) is deposited as a cap layer in a thickness of 70 nm on the second electrode 102 to improve light extraction efficiency.

[0417] Next, in a glove box with a nitrogen atmosphere, a sealing process is performed using a glass substrate in such a manner that the light-emitting device is not exposed to the atmosphere (a UV-curing sealing material is applied around the element, and only the sealing material is irradiated with UV without irradiating the light-emitting device, and then heat-treated at 80°C for 1 hour at atmospheric pressure), thereby forming a plurality of light-emitting devices having the device structure shown in the table below.

[0418] [Table 1]

[0419] Here, in order to investigate the influence of the exposure time of daylight color LED light, a plurality of light emitting devices having the above structure were manufactured, and eight of the light emitting devices were subjected to measurement at different light exposure times. The exposure times were 0 seconds (only exposure to the atmosphere), 5 seconds, 30 seconds, 1 minute, 5 minutes, 30 minutes, and 60 minutes. In addition, a light emitting device was continuously manufactured in a vacuum without exposure to light and exposure to the atmosphere as a reference.

[0420] Fig. 20 The brightness-current density characteristics of these light-emitting devices are shown. Fig.21 The current efficiency-brightness characteristics are shown. Fig. 22 The brightness-voltage characteristics are shown. Fig.23 The current density-voltage characteristics are shown. Fig.24 Shows the blue index-brightness characteristics, Fig.25 The emission spectrum is shown below. In addition, 1000 cd / cm 2The values ​​of the main voltage, current, current density, CIE chromaticity, and current efficiency in the vicinity. Note that the brightness, CIE chromaticity, and emission spectrum were measured at room temperature using a spectroradiometer (SR-UL1R manufactured by Topcon). The irradiation time of the daylight color LED light irradiated to the light emitting device is shown in the explanatory notes. In addition, the light emitting device indicated by Ref. in the explanatory notes is a light emitting device manufactured continuously in vacuum.

[0421] Note that the blue index (BI) refers to the value obtained by dividing the current efficiency (cd / A) by the y chromaticity calculated using the CIE1931 color system, and is one of the indicators that represent the luminous characteristics of blue light. The smaller the y chromaticity of the blue light, the higher the color purity of the light. Blue light with high color purity can present the desired color even if the brightness component is small, and when blue light with high color purity is used, the brightness required to present blue is reduced, so that the effect of reducing power consumption can be obtained. Therefore, as a form of expression of the efficiency of blue light, BI is sometimes used that takes into account the y chromaticity, which is one of the indicators of blue purity. It can be said that the higher the BI, the better the efficiency of the blue light of the display.

[0422] [Table 2]

[0423] Depend on Figure 20 to Figure 25 It is found that the current efficiency and the blue index luminous efficiency of the light emitting device significantly decrease when irradiated with daylight color LED light for more than 5 minutes in an air atmosphere.

[0424] in addition, Fig.26 The current density is 50 mA / cm 2 The measurement results of the brightness change during the driving time when the constant current is driven. Fig.26 It can be seen that the longer the irradiation time of the daylight color LED light is, the lower the brightness is. In particular, the brightness of the light emitting device irradiated with the daylight color LED light for more than 5 minutes is significantly reduced.

[0425] Next, the effect of the wavelength of the irradiated light on the characteristics of the light-emitting device was investigated. Specifically, seven light-emitting devices that were irradiated with LED using wavelength cutoff filters with different transmission limit wavelengths (the wavelength was located at the midpoint between the wavelength at a transmittance of 5% and the wavelength at a transmittance of 72%) after the electron transport layer was formed, and a light-emitting device that was irradiated with light without using a wavelength cutoff filter were manufactured, and their characteristics were evaluated. As each wavelength cutoff filter, filters with transmission limit wavelengths of 420nm, 440nm, 455nm, 475nm, 480nm, 500nm and 850nm were used. The light actually irradiating the light-emitting device has Fig.19The spectrum shown. In addition, the light irradiation time is 60 minutes. In addition, the daylight color LED light without a filter irradiates the irradiation surface at an illuminance of 300 lux under any conditions, and the actual irradiation illuminance is lower under the condition that the more wavelength bands of the light to be cut off are passed through the filter.

[0426] Fig. 27 The brightness-current density characteristics of these light-emitting devices with changed light irradiation wavelength and light-emitting devices manufactured continuously in vacuum are shown. Fig.28 The current efficiency-brightness characteristics are shown. Fig.29 The brightness-voltage characteristics are shown. Fig.30 The current density-voltage characteristics are shown. Fig.31 Shows the blue index-brightness characteristics, Fig.32 The emission spectrum is shown below. In addition, 1000 cd / cm 2 The values ​​of the main voltage, current, current density, CIE chromaticity, and current efficiency in the vicinity. Note that the brightness, CIE chromaticity, and emission spectrum were measured at room temperature using a spectroradiometer (SR-UL1R manufactured by Topcon). Note that the wavelengths listed in the legends in the accompanying drawings and tables are the transmission limit wavelengths of the wavelength cutoff filters used. In addition, the light-emitting devices indicated by Ref. in the legends are light-emitting devices manufactured continuously in vacuum.

[0427] [Table 3]

[0428] Depend on Figures 27 to 32 It is known that in a light emitting device irradiated with light having passed through a filter having a transmission limit wavelength of 455 nm or less, the light emitting efficiency is significantly reduced.

[0429] then, Fig.33 The current density is 50 mA / cm 2 The measurement results of the brightness change during the driving time when the constant current is driven. Fig.33 It is found that the reliability of a light-emitting device irradiated with light having a transmission limit wavelength of 455 nm or less is significantly reduced.

[0430] Here, Fig.34 This is a diagram in which the spectrum of daylight color LED light that has passed through a wavelength cutoff filter is superimposed with the absorption spectra of the host material 2αN-αNPhA and the light-emitting material 3,10PCA2Nbf(IV)-02.

[0431] Depend on Fig.34It can be seen that the absorption end of the absorption spectrum of 2αN-αNPhA is about 440nm, and the absorption end of the absorption spectrum of 3,10PCA2Nbf(IV)-02 is about 480nm. The absorption of 3,10PCA2Nbf(IV)-02 has a sufficient overlap with the spectrum of daylight color LED light passing through a filter with a transmission limit wavelength of 420nm to 455nm and the spectrum of daylight color LED light without a filter. This is related to Figures 27 to 33 That is, the absorption of 3,10PCA2Nbf(IV)-02 as a dopant material overlaps with the irradiation light, that is, the dopant material is excited in the atmosphere and is likely to cause the degradation of the characteristics.

[0432] Next, the following samples were measured using high performance liquid chromatography to investigate the effects of the type of irradiated light and the irradiation time: samples of co-evaporated films of 2αN-αNPhA and 3,10PCA2Nbf(IV)-02 (2αN-αNPhA:3,10PCA2Nbf(IV)-02=1:0.015) and evaporated films of 2αN-αNPhA irradiated with orange light at an illumination of 195 lux for 1 hour; samples irradiated with white light for 0.5 hours and 1 hour; and samples not irradiated with light.

[0433] The measurement was performed using a Waters Acquity UPLC (registered trademark) System manufactured by Waters Corporation. A photodiode array (PDA) detector was used as a detector, and the wavelength of the detector was set to 254 nm for analysis. An ACQUITY UPLC CSH C18 Column (particle size: 1.7 μm, 2.1×100 mm) manufactured by Waters Corporation was used as a chromatographic column.

[0434] The measurement was performed on a sample obtained by the following steps: a 100 nm thick film deposited on a glass substrate was cut into a size of 2.0 cm×2.0 cm, the film was eluted by applying ultrasonic waves for 10 minutes together with 1 ml of acetonitrile:chloroform (8:2), and the eluted solution was filtered using a 0.2 μm filter.

[0435] In the measurement, A: acetonitrile and B: formic acid aqueous solution (0.1%) were used as mobile layers, the flow rate was 0.5 mL / min, A was maintained at 85% for 10 minutes, then A was increased to 95% at a fixed ratio for 6 seconds, and then A was maintained at 95% for 40 minutes. The injection volume of the sample solution was 5 μL.

[0436] Fig.36A and Fig.36BThe chromatogram using the PDA detector is as follows: a sample in which a co-evaporated film of 2αN-αNPhA and 3,10PCA2Nbf(IV)-02 was irradiated with orange light (LS1200D-U2 (40-shaped straight tube LED orange lamp (compatible with brilliant mode, rapid mode, inverter mode, AC direct connection mode) manufactured by MGMT Co., Ltd.) at an illumination of 195 lux for 1 hour in an atmosphere containing oxygen; and the co-evaporated film was irradiated with light having a wavelength of 2.17 nm at an illumination of 300 lux. Fig.19 The "no filter" spectrum shown is for samples exposed to 10W daylight color (color temperature 6850 Kelvin) LED (Rechargeable LED Light with Magnet LW-10N manufactured by HATAYA Smoke House of Japan) light for 0.5 hours and 1 hour; and a sample without light exposure. Fig.36B Is magnification Fig.36A of charts.

[0437] Depend on Fig.36A It can be seen that the peak of 2αN-αNPhA is observed in the latter half of the retention time between 7 and 8 minutes. When mass analysis is performed, 2αN-αNPhA obtains a peak of m / z = 507.20, which is the value obtained by adding the mass number of the proton 1 to the mass number of 2αN-αNPhA. Fig.36B In the chromatogram, two peaks were observed between 3 minutes and 4 minutes. When the substance at the peak near 3.7 minutes was mass analyzed, a peak of m / z = 539.20 was obtained. This value is the value obtained by adding the mass number 1 of the proton and the mass of two oxygen atoms 32 to the main material 2αN-αNPhA. In other words, the difference in mass number between 2αN-αNPhA and the substance near 3.7 minutes in the chromatogram is 32, which is equivalent to two oxygen atoms. Therefore, it can be considered that a substance to which two oxygen atoms are added to 2αN-αNPhA (hereinafter sometimes simply referred to as an oxygen adduct) is generated as an impurity in the sample irradiated with white light. Since this impurity is a degraded product generated in an atmospheric atmosphere, it can be considered that it is generated by the bonding of oxygen molecules in the atmosphere to 2αN-αNPhA. In addition, since oxygen is the cause, the same is true in an atmosphere containing oxygen (more than 20%).

[0438] No peak was detected near 3.7 minutes in the sample irradiated with orange light at an illumination of 195 lux for 1 hour and the sample shielded from light, but a peak was detected near 3.7 minutes in the sample irradiated with white light for 0.5 hours and 1 hour, and when these were converted into oxygen adduct concentrations, the concentrations were 206 ppm and 384 ppm, respectively. It can be seen that as the irradiation time of white light increases, the impurity concentration in the sample increases.

[0439] Here, from Figure 20 to Figure 25It can be seen that the initial characteristics begin to be affected after 1 minute of exposure to daylight LED light, and the initial characteristics are significantly affected after 5 minutes of exposure. Fig.26 It can be seen that the influence on reliability begins to appear after irradiation with daylight color LED light for 5 seconds, and the influence on reliability becomes obvious after irradiation with daylight color LED light for more than 1 minute.

[0440] Assuming that the generation of oxygen adducts is proportional to the light irradiation time, it can be seen from the results of FIG36 that the influence on reliability begins to appear when about 0.5 ppm of oxygen adducts are generated. In addition, when considering that the atmospheric exposure and light irradiation in the photolithography process are at least about 60 seconds, it can be said that the influence on reliability appears when a film that generates 0.5 ppm or more of oxygen adducts by irradiating daylight color LED light for 60 seconds is used for a light-emitting layer. In other words, it is generally difficult to use a light-emitting layer (co-evaporated film of a host material and a light-emitting center substance) that generates 0.5 ppm or more of oxygen adducts by irradiating daylight color LED light for 60 seconds for a light-emitting device manufactured by a photolithography process.

[0441] However, in one embodiment of the present invention, Figures 27 to 34 As shown in FIG. 1 , when exposed to the atmosphere, light including light in the short wavelength region is not irradiated, and thus oxygen adducts are not formed, and good characteristics can be obtained even for a light-emitting device manufactured through a photolithography process. Note that as a lamp that emits light that does not include light in the short wavelength region, there are orange lamps, etc., which have Fig.35 Spectra shown.

[0442] In addition, since the influence occurs at 0.5 ppm, the concentration of oxygen adducts contained in the light-emitting layer (co-evaporated film of the host material and the light-emitting center substance) of the light-emitting device manufactured through the photolithography process is preferably 0.25 ppm or less, and more preferably 0.05 ppm or less.

[0443] Figure 37 is a chromatogram of the PDA detector of high performance liquid chromatography of the following samples: a sample in which a single 2αN-αNPhA vapor-deposited film of the main material was irradiated with orange light at an illumination of 195 lux for 1 hour in an atmosphere containing oxygen, as in the above-mentioned co-deposited film; a sample in which the film was irradiated with daylight-colored LED light at an illumination of 300 lux for 0.5 hour and 1 hour; and a sample that was not irradiated with light. Fig.37B Is magnification Fig.37A37 shows that even a single film of 2αN-αNPhA generates impurities (oxygen adducts) when irradiated with daylight LED light in the atmosphere. In a single film of 2αN-αNPhA, 149 ppm of oxygen adducts were generated in a sample irradiated with daylight LED light at an illumination of 300 lux for 0.5 hours, and 258 ppm of oxygen adducts were generated in a sample irradiated with daylight LED light for 1 hour.

[0444] As with the co-evaporated film, assuming that the generation of oxygen adducts is proportional to the irradiation time of light, it can be said that when an organic compound that generates 0.4 ppm or more of oxygen adducts by irradiating daylight color LED light at an illuminance of 300 lux for 60 seconds is used, an influence on reliability occurs. In other words, it is generally difficult to use an organic compound that generates 0.4 ppm or more of oxygen adducts by irradiating daylight color LED light at an illuminance of 300 lux for 60 seconds for a light-emitting device manufactured through a photolithography process. In addition, since the influence occurs at 0.4 ppm, the concentration of oxygen adducts contained in the material used for the light-emitting device manufactured through a photolithography process is preferably 0.2 ppm or less, and more preferably 0.04 ppm or less.

[0445] Thus, any method can be used for the measurement of oxygen adducts. However, for example, in high performance liquid chromatography, it is difficult to detect such trace impurities in many cases. In this case, based on the above assumption that oxygen adducts are formed in a manner proportional to the light irradiation time, the sample in which the light irradiation time of the film is extended to generate a detectable amount of impurities is measured, and the result is converted into the impurity concentration in a fixed time. Alternatively, assuming that oxygen adducts are formed in a manner proportional to the light irradiation intensity, the sample in which the light irradiation intensity is increased to generate a detectable amount of impurities is measured, and the result is converted into the impurity concentration under a fixed irradiation intensity.

[0446] According to this, for example, when a film (co-evaporated film of a main material and a luminescent center substance) in which an oxygen adduct of 30 ppm or more is detected when irradiated with daylight color LED light at an illumination of 300 lux for 1 hour is used for a light-emitting layer, an effect does occur, so it can be said that a film in which an oxygen adduct of 15 ppm or more or even 3 ppm or more is detected is not easily used for a light-emitting device that has undergone a photolithography process. In other words, by using one embodiment of the present invention, even if a film in which an oxygen adduct of 3 ppm or more, 15 ppm or more or even 30 ppm or more is detected when irradiated with daylight color LED light for 1 hour in the atmosphere is used for a light-emitting layer, a light-emitting device with good characteristics after a photolithography process can be obtained.

[0447] Similarly, when an organic compound is used in which an oxygen addition product of 24 ppm or more is detected when irradiated with daylight color LED light at an illumination of 300 lux for 1 hour, a negative effect does occur, so it can be said that an organic compound in which an oxygen addition product of 12 ppm or more or 2.4 ppm or more is detected is not easily used in a light-emitting device that has undergone a photolithography process. In other words, by using one embodiment of the present invention, even if a film in which an oxygen addition product of 2.4 ppm or more, 12 ppm or more, or even 24 ppm or more is detected when irradiated with daylight color LED light for 1 hour in an atmospheric atmosphere is used for a light-emitting layer, a light-emitting device with good characteristics after a photolithography process can be obtained. [Explanation of symbols]

[0448] 100A: display device, 100B: display device, 100C: display device, 100E: display device, 100D: display device, 100: insulator, 101A: first electrode group, 101a: first electrode, 101b: first electrode, 101: first electrode, 102: second electrode, 103a: organic compound layer, 103b: organic compound layer, 103Bf: organic compound film, 103Gf: organic compound film, 103Rf: organic compound film, 103: organic compound layer, 105: common layer, 110B: sub-pixel, 110G: sub-pixel, 110R: sub-pixel, 110: sub-pixel, 111a: hole injection layer, 111b: hole injection layer, 111 1: hole injection layer, 112: hole transport layer, 112a: hole transport layer, 112b: hole transport layer, 112B: conductive layer, 112R: conductive layer, 113: light emitting layer, 113a: light emitting layer, 113b: light emitting layer, 114: electron transport layer, 114a: electron transport layer, 114b: electron transport layer, 115: electron injection layer, 116: charge generation layer, 117: P-type layer, 118: electron relay layer, 119: electron injection buffer layer, 120: substrate, 122: resin layer, 125f: inorganic insulating film, 125: inorganic insulating layer, 126R: conductive layer, 126B: conductive layer, 127a: insulating layer, 127f: insulating film, 127: insulating layer, 128 : layer, 129R: conductive layer, 129B: conductive layer, 130a: light emitting device, 130B: light emitting device, 130b: light emitting device, 130G: light emitting device, 130R: light emitting device, 130: light emitting device, 131: protective layer, 132B: coloring layer, 132G: coloring layer, 132R: coloring layer, 135: first layer, 135A: first layer group, 135a: first layer, 135b: first layer, 135R: first layer, 135G: first layer, 135B: first layer, 136: common layer, 140: connecting part, 141: region, 142: adhesive layer, 151B: conductive layer, 151C: conductive layer, 151f: conductive film, 151f: conductive film, 151 G: conductive layer, 151R: conductive layer, 151: conductive layer, 152B: conductive layer, 152C: conductive layer, 152f: conductive film, 152G: conductive layer, 152R: conductive layer, 152: conductive layer, 153: insulating layer, 156B: insulating layer, 156C: insulating layer, 156f: insulating film, 156G: insulating layer, 156R: insulating layer, 156: insulating layer, 157: light shielding layer, 158B: sacrificial layer, 158Bf: sacrificial film, 158G: sacrificial layer, 158Gf: sacrificial film, 158R: sacrificial layer, 158Rf: sacrificial film, 159B: mask layer, 159Bf: mask film, 159G: mask layer, 159Gf: mask film, 159R: mask layer,159Rf: mask film, 166: conductive layer, 171: insulating layer, 172: conductive layer, 173: insulating layer, 174: insulating layer, 175: insulating layer, 176: plug, 177: pixel portion, 178: pixel, 179: conductive layer, 190B: resist mask, 190G: resist mask, 190R: resist mask, 191: resist mask, 201: transistor, 204: connecting portion, 205: transistor, 211: insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 224B: conductive layer, 224C: conductive layer, 224G: conductive layer, 22 4R: Conductive layer, 231: Semiconductor layer, 240: Capacitor, 241: Conductive layer, 242: Connection layer, 243: Insulating layer, 245: Conductive layer, 254: Insulating layer, 255: Insulating layer, 256: Plug, 261: Insulating layer, 271: Plug, 280: Display module, 281: Display unit, 282: Circuit unit, 283a: Pixel circuit, 283: Pixel circuit unit, 284a: Pixel, 284: Pixel unit, 285: Terminal unit, 286: Wiring unit, 290: FPC, 291: Substrate, 292: Substrate, 301: Substrate, 310: Transistor, 311: Conductive layer, 312: Low resistance region, 313: Insulating layer, 314: Insulating layer, 315: Element separation layer, 351: substrate, 352: substrate, 353: FPC, 354: IC, 355: wiring, 356: circuit, 501: first electrode, 502: second electrode, 513: charge generation layer, 700A: electronic device, 700B: electronic device, 721: housing, 723: mounting portion, 727: earphone portion, 750: earphone, 751: display panel, 753: optical member, 756: display area, 757: frame, 758: nose pad, 800A: electronic device, 800B: electronic device, 820: display portion, 821: housing, 822: communication portion, 823: mounting portion, 824: control portion, 825: imaging portion, 827: earphone portion, 832: lens, 117: Light shielding layer, 6500: electronic device, 6501: housing, 6502: display unit, 6503: power button, 6504: button, 6505: speaker, 6506: microphone, 6507: camera, 6508: light source, 6510: protection member, 6511: display panel, 6512: optical member, 6513: touch sensor panel, 6515: FPC, 6516: IC, 6517: printed circuit board, 6518: battery, 7000: display unit, 7100: television device, 7151: remote control unit, 7171: housing, 7173: stand, 7200: notebook personal computer, 7211: housing, 7212: keyboard, 7213: pointing device,7214: External connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal device, 7400: Digital signage, 7401: Pillar, 7411: Information terminal device, 9000: Housing, 9001: Display unit, 9002: Camera, 9003: Speaker, 9005: Operation key, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9171: Portable information terminal, 9172: Portable information terminal, 9173: Tablet terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

1. A light-emitting device which is one of a plurality of light-emitting devices included in a light-emitting device group consisting of a first electrode group formed on the same insulating surface, a second electrode opposite to the first electrode group, and a first layer group located between the first electrode group and the second electrode, the light-emitting device comprising: a first electrode of one of the first electrode groups; the second electrode; as well as a first layer of one of the first layer groups, The first electrode group is composed of a plurality of first electrodes that are independent of each other in the plurality of light-emitting devices. The first layer group is composed of a plurality of first layers that are independent of each other in the plurality of light-emitting devices. The second electrode is a continuous conductive layer commonly used by the plurality of light-emitting devices. The second electrode and the first layer overlap with the first electrode, The first layer includes a light-emitting layer including a light-emitting center substance and a first substance, The first substance is a substance that generates an oxygen adduct of the first substance in the film when a film having the same composition as the light-emitting layer is irradiated with light having an intensity of 10% or more of the maximum peak intensity at a wavelength of 475 nm or less in an atmospheric atmosphere, Furthermore, a distance between the first layer included in the light-emitting device and a first layer included in another light-emitting device adjacent to the light-emitting device is greater than or equal to 2 μm and less than or equal to 5 μm.

2. A light-emitting device which is one of a plurality of light-emitting devices included in a light-emitting device group consisting of a first electrode group formed on the same insulating surface, a second electrode opposite to the first electrode group, and a first layer group located between the first electrode group and the second electrode, the light-emitting device comprising: a first electrode of one of the first electrode groups; the second electrode; as well as a first layer of one of the first layer groups, The first electrode group is composed of a plurality of first electrodes that are independent of each other in the plurality of light-emitting devices. The first layer group is composed of a plurality of first layers that are independent of each other in the plurality of light-emitting devices. The second electrode is a continuous conductive layer commonly used by the plurality of light-emitting devices. The second electrode and the first layer overlap with the first electrode, The first layer includes a light-emitting layer including a light-emitting center substance and a first substance, The first substance is a substance in which the concentration of the oxygen adduct of the first substance in the film is 15 ppm or more when the film having the same composition as the light-emitting layer is irradiated with daylight color LED light at an illumination of 300 lux for 60 minutes in an atmospheric atmosphere, Furthermore, a distance between the first layer included in the light-emitting device and a first layer included in another light-emitting device adjacent to the light-emitting device is greater than or equal to 2 μm and less than or equal to 5 μm.

3. A light-emitting device which is one of a plurality of light-emitting devices included in a light-emitting device group consisting of a first electrode group formed on the same insulating surface, a second electrode opposite to the first electrode group, a first layer group located between the first electrode group and the second electrode, and a common layer, the light-emitting device comprising: a first electrode of one of the first electrode groups; the second electrode; a first layer of one of the first layer groups; as well as Public layer, The first electrode group is composed of a plurality of first electrodes that are independent of each other in the plurality of light-emitting devices. The first layer group is composed of a plurality of first layers that are independent of each other in the plurality of light-emitting devices. The second electrode is a continuous conductive layer commonly used by the plurality of light-emitting devices. The common layer is a continuous layer commonly used by the plurality of light-emitting devices. The second electrode, the first layer and the common layer overlap with the first electrode, The first layer includes a light-emitting layer including a light-emitting center substance and a first substance, The first substance is a substance in which the concentration of the oxygen adduct of the first substance in the film is 15 ppm or more when the film having the same composition as the light-emitting layer is irradiated with daylight color LED light at an illumination of 300 lux for 60 minutes in an atmospheric atmosphere, Furthermore, a distance between the first layer included in the light-emitting device and a first layer included in another light-emitting device adjacent to the light-emitting device is greater than or equal to 2 μm and less than or equal to 5 μm.

4. The light emitting device according to claim 2 or 3, The first substance is an organic compound having an acene skeleton.

5. The light emitting device according to claim 2 or 3, The first substance is an organic compound having an anthracene skeleton.

6. The light emitting device according to claim 5, The luminescent center substance is an organic compound that emits blue fluorescence.

7. The light emitting device according to claim 5, The first layer included in the adjacent other light-emitting device includes a light-emitting layer containing a phosphorescent material.

8. The light emitting device according to claim 7, The phosphorescent material emits green or red phosphorescence.

9. A display device, comprising: a first light emitting device; as well as a second light emitting device, The first light emitting device includes a first electrode, a second electrode, and a first layer located between the first electrode and the second electrode. The second light emitting device includes a third electrode, a fourth electrode, and a second layer located between the third electrode and the fourth electrode, The first layer includes a light-emitting layer including a light-emitting center substance and a first substance, The first substance is a substance in which the concentration of the oxygen adduct of the first substance in the film is 15 ppm or more when the film having the same composition as the light-emitting layer is irradiated with daylight color LED light at an illumination of 300 lux for 60 minutes in an atmospheric atmosphere, Furthermore, a distance between the first layer and the second layer is greater than or equal to 2 μm and less than or equal to 5 μm.

10. A display device, comprising: a first light emitting device; as well as a second light emitting device, The first light emitting device includes a first electrode, a second electrode, a first layer located between the first electrode and the second electrode, and a first common layer located between the first layer and the second electrode. The second light emitting device includes a third electrode, a fourth electrode, a second layer located between the third electrode and the fourth electrode, and a second common layer located between the second layer and the fourth electrode, The first common layer and the second common layer are made of the same material, The first layer includes a light-emitting layer including a light-emitting center substance and a first substance, The first substance is a substance in which the concentration of the oxygen adduct of the first substance in the film is 15 ppm or more when the film having the same composition as the light-emitting layer is irradiated with daylight color LED light at an illumination of 300 lux for 60 minutes in an atmospheric atmosphere, Furthermore, a distance between the first layer and the second layer is greater than or equal to 2 μm and less than or equal to 5 μm.

11. The display device according to claim 9 or 10, The first substance is an organic compound having an acene skeleton.

12. The display device according to claim 9 or 10, The first substance is an organic compound having an anthracene skeleton.

13. The display device according to claim 12, The luminescent center substance is an organic compound that emits blue fluorescence.

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