Method and device for judging quality of simulated semiconductor quantum dot device

Abstract

The present application relates to the technical field of quantum computer, in particular to a kind of quality judging method and device for simulating semiconductor quantum dot device, the present application simulates semiconductor quantum dot device by simulation mode, then, determine the multiple wave functions corresponding to the limit potential distribution diagram of the simulated semiconductor quantum dot device, and construct the wave function image corresponding to multiple wave functions;Whether the simulated semiconductor quantum dot device can form quantum dot is judged by determining the state of the wave function corresponding to the limit potential of simulated semiconductor quantum dot device, when the simulated semiconductor quantum dot device can form quantum dot, the quality of this simulated semiconductor quantum dot device meets the requirements, can be produced according to the simulated semiconductor quantum dot device, improve the yield of semiconductor quantum dot device in actual production, save cost.

Description

Technical Field

[0001] This invention relates to the field of quantum computer technology, and in particular to a method and apparatus for judging the quality of simulated semiconductor quantum dot devices. Background Technology

[0002] Semiconductor quantum dot devices are created by fabricating a series of electrodes on the surface of a semiconductor heterojunction or MOS (metal oxide semiconductor). By controlling the electrode voltage, electrons are confined to a very small area to form quantum dots. However, in actual production, many semiconductor quantum dot devices fail to form quantum dots, resulting in low yields. To find viable semiconductor quantum dot devices, actual production must rely on mass-producing samples for screening, leading to extremely high manufacturing costs. Summary of the Invention

[0003] This invention provides a method and apparatus for judging the quality of simulated semiconductor quantum dot devices, in order to solve the problems of low yield and extremely high manufacturing cost of semiconductor quantum dot devices during experimental fabrication.

[0004] This specification provides an embodiment of a method for judging the quality of simulated semiconductor quantum dot devices, including:

[0005] Determine multiple wave functions corresponding to the confinement potential distribution map of the simulated semiconductor quantum dot device, and construct wave function images corresponding to multiple wave functions;

[0006] Determine the maximum value of the wave function in the wave function image, the value of the wave function on the boundary, and preset the weight of the maximum value of the wave function;

[0007] The values ​​of the wave functions located on the boundaries in the wave function image are compared with the maximum values ​​of the wave functions after a preset weighting to determine the states of multiple wave functions;

[0008] The quality of the simulated semiconductor quantum dot device is determined based on the states of multiple wave functions.

[0009] Optionally, before determining the multiple wavefunctions corresponding to the confinement potential distribution map of the simulated semiconductor quantum dot device, the following steps are included:

[0010] Use a 3D finite element mesh generator to draw a simulated semiconductor quantum dot device;

[0011] Simulation parameters are set for the simulated semiconductor quantum dot device.

[0012] Optionally, calculating the wavefunction corresponding to the confinement potential distribution of the simulated semiconductor quantum dot device includes:

[0013] The potential distribution data of the simulated semiconductor quantum dot device are calculated based on the simulation parameters and the preset potential distribution function.

[0014] Construct a potential distribution map based on the described potential distribution data;

[0015] The potential distribution map of a limited region selected from the potential distribution map of the simulated semiconductor quantum dot device is obtained as a confined potential distribution map.

[0016] The wave function corresponding to the confinement potential distribution of the simulated semiconductor quantum dot device is calculated by calling the Schrödinger equation solver.

[0017] Optionally, the preset potential distribution function includes the Poisson equation;

[0018] The step of calculating the potential distribution data of the simulated semiconductor quantum dot device based on the simulation parameters and the preset potential distribution function includes:

[0019] The potential distribution data of the simulated semiconductor quantum dot device are calculated based on the simulation parameters and the Poisson equation.

[0020] Optionally, determining the states of the plurality of wave functions includes:

[0021] When the values ​​of the wave functions on the boundaries in the wave function image are all less than the maximum value of the wave function after a preset weight, the wave function is in a bound state;

[0022] When the value of the wavefunction at the boundary in the wavefunction image is greater than or equal to the maximum value of the wavefunction after a preset weight, the wavefunction is in a scattering state.

[0023] Optionally, determining the quality of the simulated semiconductor quantum dot device based on the states of multiple wave functions includes:

[0024] When there is a bound wave function among the multiple wave functions, the simulated semiconductor quantum dot device can form a quantum dot, and the simulated semiconductor quantum dot device is of qualified quality.

[0025] When none of the multiple wave functions are in a bound state, the simulated semiconductor quantum dot device cannot form a quantum dot, and the simulated semiconductor quantum dot device is of substandard quality.

[0026] Optionally, after determining the quality of the simulated semiconductor quantum dot device based on the states of multiple said wave functions, the process includes:

[0027] The simulation parameters are adjusted to optimize the quality of the simulated semiconductor quantum dot device.

[0028] This specification also provides a quality assessment device for a simulated semiconductor quantum dot device, comprising:

[0029] A wavefunction image construction module is used to determine multiple wavefunctions corresponding to the confinement potential distribution map of the simulated semiconductor quantum dot device, and to construct wavefunction images corresponding to multiple wavefunctions.

[0030] The numerical determination module is used to determine the maximum value of the wave function in the wave function image, the value of the wave function on the boundary, and to preset the weight of the maximum value of the wave function.

[0031] The wave function state determination module is used to compare the values ​​of the wave functions on the boundaries in the wave function image with the maximum values ​​of the wave functions after preset weighting, and determine the states of multiple wave functions.

[0032] A quality determination module is used to determine the quality of a simulated semiconductor quantum dot device based on the states of multiple wave functions.

[0033] An electronic device includes a memory and a processor, wherein the memory stores a computer program and the processor is configured to run the computer program to perform the methods described above.

[0034] A storage medium, characterized in that the storage medium stores a computer program, the computer program being configured to execute the method described above when running.

[0035] Its beneficial effects are as follows: This invention simulates a semiconductor quantum dot device through simulation, then determines multiple wave functions corresponding to the confinement potential distribution of the simulated semiconductor quantum dot device, and constructs wave function images corresponding to multiple wave functions; by determining the state of the wave function corresponding to the confinement potential of the simulated semiconductor quantum dot device, it is determined whether the simulated semiconductor quantum dot device can form quantum dots. When the simulated semiconductor quantum dot device can form quantum dots, the quality of the simulated semiconductor quantum dot device meets the requirements, and it can be used for production, thereby improving the yield of semiconductor quantum dot devices in actual production and saving costs. Attached Figure Description

[0036] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0037] Figure 1 This is a schematic diagram of a one-dimensional finite-depth square potential well provided in this specification;

[0038] Figure 2 A schematic diagram of the wavefunction image provided in the embodiments of this specification;

[0039] Figure 3 This is another schematic diagram of a wavefunction image provided in the embodiments of this specification;

[0040] Figure 4 This is another schematic diagram of a wavefunction image provided in the embodiments of this specification;

[0041] Figure 5 This is another schematic diagram of a wavefunction image provided in the embodiments of this specification;

[0042] Figure 6 This is another schematic diagram of a wavefunction image provided in the embodiments of this specification;

[0043] Figure 7 A schematic diagram illustrating the principle of a method for judging the quality of a simulated semiconductor quantum dot device with a quantum bit driving line, as provided in the embodiments of this specification.

[0044] Figure 8 This is a schematic diagram of the structure of a quality judgment device for a simulated semiconductor quantum dot device with a quantum bit driving line, provided in an embodiment of this specification.

[0045] Figure 9 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this specification;

[0046] Figure 10 This is a schematic diagram of a computer-readable medium provided for embodiments of this specification. Detailed Implementation

[0047] The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0048] The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0049] It should be noted that, unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps described in these embodiments do not limit the scope of the invention.

[0050] The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit the invention or its application or use.

[0051] Techniques, methods, and equipment known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and equipment should be considered part of the specification.

[0052] In all the examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values.

[0053] It should be noted that similar labels and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be discussed further in subsequent figures.

[0054] The criterion for whether a semiconductor quantum dot device can form a quantum dot is whether the wave function obtained from solving the Schrödinger equation contains bound states. Bound states are characterized by: a) discrete energy levels, and b) a wave function localized within a finite range. However, in actual QTCAD (Quantum-Technology Computer-Aided Design) simulations, due to computational limitations, we can only select a finite region for simulation. Because the region is finite, the energy levels obtained from solving the Schrödinger equation are always discrete, and cannot be used to determine bound states. Figure 1 The diagram shows a one-dimensional finite-depth square potential well with a depth of 50 eV. Analytical solutions tell us that only quantum states with energies below infinity are bound states, while quantum states with energies above 50 eV are extended states. Figure 1 The horizontal axis represents the width of the selected finite region, and the vertical axis represents the potential well depth energy value.

[0055] In numerical methods, we can only select a finite-sized region. When the energy of a quantum state is less than 50 eV, these quantum states are bound states, with discrete energies and localized wave functions. In this case, the energy and wave function in the numerical results are close to the analytical solution, such as... Figure 2 , Figure 3 , Figure 4 As shown. When the quantum state energy is greater than 50 eV, the analytical solution tells us that the quantum state is a scattering state, and the energy should be some continuous values. However, the numerical solution can only give discrete energies, such as... Figure 5 , Figure 6 As shown above, we cannot directly use analytical or numerical solutions to determine the state of the wave function obtained from solving the Schrödinger equation, nor can we determine whether a semiconductor quantum dot device can form quantum dots. Therefore, we cannot guarantee the quality of the manufactured semiconductor quantum dot devices. Thus, a method and device for simulating the quality judgment of semiconductor quantum dot devices are proposed. Among them, Figure 2 to Figure 6 The horizontal axis represents the width of the selected finite region, and the vertical axis represents the value of the wave function. The eigenvalues ​​are the quantum state energy values.

[0056] Reference Figure 7A schematic diagram illustrating the principle of a method for judging the quality of a simulated semiconductor quantum dot device provided in the embodiments of this specification includes:

[0057] S101: Determine multiple wave functions corresponding to the confinement potential distribution map of the simulated semiconductor quantum dot device, and construct wave function images corresponding to multiple wave functions;

[0058] In one optional embodiment, before determining the multiple wave functions corresponding to the confinement potential distribution map of the simulated semiconductor quantum dot device, it is necessary to call a 3D finite element mesh generator to draw the simulated semiconductor quantum dot device, and then set simulation parameters for the simulated semiconductor quantum dot device, including electrode dimensions, the thickness of each layer of material in the simulated semiconductor quantum dot device, and the material of each layer of material, etc.; according to the simulation parameters and the Poisson equation in the preset potential distribution function, the potential distribution data of the simulated semiconductor quantum dot device is calculated, and the potential distribution data is displayed on the QTCAD simulation interface in the form of a potential distribution map. Then, the potential distribution map of the selected finite region in the potential distribution map of the simulated semiconductor quantum dot device is obtained to obtain the confinement potential distribution map. By calling the Schrödinger equation solver and combining the potential distribution data in the confinement potential distribution map, the Schrödinger equation is calculated to obtain the wave function corresponding to the confinement potential distribution map of the simulated semiconductor quantum dot device. Taking three-dimensional space as an example, the wave function is represented as follows: Where i represents the number of wave functions, and (x, y, z) represents the position coordinates of the wave functions in three-dimensional space. This simulation method enables online simulation of semiconductor quantum dot devices, avoiding the cost losses associated with offline manufacturing. If the simulated semiconductor quantum dot device is subsequently determined to form quantum dots, production can proceed based on this simulated device, improving the yield of semiconductor quantum dot devices in actual production and saving costs.

[0059] S102: Determine the maximum value of the wave function in the wave function image, the value of the wave function on the boundary, and preset the weight of the maximum value of the wave function;

[0060] S103: Compare the values ​​of the wave functions on the boundaries in the wave function image with the maximum values ​​of the wave functions after preset weighting to determine the states of the multiple wave functions.

[0061] Optionally, determining the states of the plurality of wave functions includes:

[0062] When the values ​​of the wave functions on the boundaries in the wave function image are all less than the maximum value of the wave function after a preset weight, the wave function is in a bound state;

[0063] When the value of the wavefunction at the boundary in the wavefunction image is greater than or equal to the maximum value of the wavefunction after a preset weight, the wavefunction is in a scattering state.

[0064] In an alternative embodiment, still taking three-dimensional space as an example, for each wave function... First calculate the wave function The squared modulus in three-dimensional spatial coordinates Then, in multiple modulus squares Find the largest squared modulus, which is the maximum value of the wavefunction in the wavefunction graph. Denote the maximum value of the wavefunction in the wavefunction graph as... And the maximum value of the wave function in the wave function graph. Set a weight λ; then, find the wavefunction value on the boundary of the wavefunction image, that is, the squared modulus of the wavefunction image on the boundary in three-dimensional space, denoted as λ. Then, compare With λ Since the wavefunction image is at the square of its modulus on the boundary in three-dimensional space There is more than one, so it is necessary to... The maximum value λ of the wave function in the wave function graph When comparing, All are less than λ When the wave function is in a bound state, it is in a bound state; when There exists a value greater than or equal to λ. When the wave function is in a scattering state, the state of multiple wave functions can be determined in the above way, thereby providing data support for subsequent determination of whether the simulated semiconductor quantum dot device can form a quantum dot. Here, λ is a number close to 0 and can be set according to requirements.

[0065] S104: Determine the quality of the simulated semiconductor quantum dot device based on the states of multiple wave functions.

[0066] Optionally, determining the quality of the simulated semiconductor quantum dot device based on the states of multiple wave functions includes:

[0067] When there is a bound wave function among the multiple wave functions, the simulated semiconductor quantum dot device can form a quantum dot, and the simulated semiconductor quantum dot device is of qualified quality.

[0068] When none of the multiple wave functions are in a bound state, the simulated semiconductor quantum dot device cannot form a quantum dot, and the simulated semiconductor quantum dot device is of substandard quality.

[0069] In one alternative embodiment, when i wave functions There exists a wave function in the state. When the state is in a bound state, it indicates that the simulated semiconductor quantum dot device can form quantum dots, and the quality of the simulated semiconductor quantum dot device is qualified. Based on this simulated semiconductor quantum dot device, corresponding finished products can be manufactured, thus enabling the actual production of semiconductor quantum dot devices to form quantum dots, improving the yield of semiconductor quantum dot devices in actual production, and saving costs; when i wave functions When none of the states are in a bound state, the simulated semiconductor quantum dot device cannot resemble a quantum dot, the quality of the simulated semiconductor quantum dot device is unqualified, and the relevant data of the simulated semiconductor quantum dot device cannot be used as a basis for actual production, thus indirectly improving the yield of actual semiconductor quantum dot devices.

[0070] Optionally, after determining the quality of the simulated semiconductor quantum dot device based on the states of multiple said wave functions, the process includes:

[0071] The simulation parameters are adjusted to optimize the quality of the simulated semiconductor quantum dot device.

[0072] In one alternative embodiment, when i wave functions When none of the states are in a bound state, the simulated semiconductor quantum dot device cannot resemble a quantum dot, and the quality of the simulated semiconductor quantum dot device is unqualified and cannot meet actual requirements. At this time, we can optimize the simulated semiconductor quantum dot device by adjusting various simulation parameters in the QTCAD simulation interface until a wavefunction exists. The state is bound, which greatly reduces the probability of defective semiconductor quantum dot devices in actual production.

[0073] In one alternative embodiment, taking a one-dimensional space as an example, refer to... Figure 2-5 These are multiple wavefunction images corresponding to the confinement potential distribution of a simulated semiconductor quantum dot device in one-dimensional space. maximum value =|-0.4| 2 The wavefunction image in one-dimensional space has a squared modulus on the boundary. =|-0.01| 2 If the weight λ is 0.1, then the squared modulus of the wavefunction image on the boundary in one-dimensional space is... Less than λ The wavefunction is in a bound state, thus the simulated semiconductor quantum dot device can form quantum dots. Similarly, Figure 3 , Figure 4 The corresponding wave function is also in a bound state; although Figure 5 Midwave function maximum value The value is |-0.62| 2The wavefunction image in one-dimensional space has a squared modulus on the boundary. =|-0.65| 2 |0.65| 2 If the weight λ is 0.1, then the squared modulus of the wavefunction image on the boundary in one-dimensional space is... Greater than λ The wave function In a scattering state, similarly, Figure 6 The corresponding wavefunction is also in a scattering state. However, since the formation of a quantum dot in a simulated semiconductor quantum dot device depends on the existence of a bound wavefunction, the simulated semiconductor quantum dot device in this embodiment can form quantum dots, meeting the quality requirements for manufacturing semiconductor quantum dot devices. It should be noted that this embodiment is illustrated using only one-dimensional space. In practice, the state of the wavefunction is generally determined in three-dimensional space. This invention does not limit the spatial dimension; the method of this invention can be used to determine the quality of simulated semiconductor quantum dot devices in different spatial dimensions.

[0074] This invention simulates a semiconductor quantum dot device through simulation. Then, it determines multiple wave functions corresponding to the confinement potential distribution of the simulated semiconductor quantum dot device and constructs wave function images corresponding to these wave functions. By determining the state of the wave functions corresponding to the confinement potential of the simulated semiconductor quantum dot device, it judges whether the simulated semiconductor quantum dot device can form quantum dots. When the simulated semiconductor quantum dot device can form quantum dots, its quality meets the requirements, and it can be used for production, improving the yield of semiconductor quantum dot devices in actual production and saving costs.

[0075] Reference Figure 8 A schematic diagram of a quality judgment device for a simulated semiconductor quantum dot device provided in the embodiments of this specification includes:

[0076] The wave function image construction module 201 is used to determine multiple wave functions corresponding to the confinement potential distribution map of the simulated semiconductor quantum dot device, and to construct wave function images corresponding to multiple wave functions;

[0077] The numerical determination module 202 is used to determine the maximum value of the wave function in the wave function image, the value of the wave function on the boundary, and to preset the weight of the maximum value of the wave function.

[0078] Wave function state determination module 203 is used to compare the values ​​of wave functions on the boundary in the wave function image with the maximum values ​​of the wave functions after preset weighting, and determine the states of multiple wave functions;

[0079] The quality determination module 204 is used to determine the quality of the simulated semiconductor quantum dot device based on the state of multiple wave functions.

[0080] Optionally, the device further includes:

[0081] The drawing module is used to call the 3D finite element mesh generator to draw simulated semiconductor quantum dot devices.

[0082] The parameter setting module is used to set simulation parameters for the simulated semiconductor quantum dot device.

[0083] Optionally, the wavefunction image construction module 201 includes:

[0084] The potential distribution data calculation unit is used to calculate the potential distribution data of the simulated semiconductor quantum dot device based on the simulation parameters and the preset potential distribution function.

[0085] A potential distribution map construction unit is used to construct a potential distribution map based on the potential distribution data;

[0086] The potential distribution map selection unit is used to select a limited region of the potential distribution map in the potential distribution map of the simulated semiconductor quantum dot device to obtain a restricted potential distribution map;

[0087] The wave function calculation unit is used to call the Schrödinger equation solver to calculate the wave function corresponding to the confined potential distribution diagram of the simulated semiconductor quantum dot device.

[0088] Optionally, the preset potential distribution function includes the Poisson equation;

[0089] The potential distribution data calculation unit includes:

[0090] The potential distribution data calculation subunit is used to calculate the potential distribution data of the simulated semiconductor quantum dot device based on the simulation parameters and the Poisson equation.

[0091] Optionally, the wavefunction state determination module 203 includes:

[0092] The first state determination unit is used to determine that the wave function is in a bound state when the values ​​of the wave functions on the boundaries in the wave function image are all less than the maximum value of the wave function after a preset weight.

[0093] The second state determination unit is used to determine that the wavefunction is in a scattering state when the value of the wavefunction on the boundary in the wavefunction image is greater than or equal to the maximum value of the wavefunction after a preset weight.

[0094] Optionally, the quality determination module 204 includes:

[0095] The first quality determination unit is used to determine that when there is a wave function in a bound state among the multiple wave functions, the simulated semiconductor quantum dot device can form a quantum dot, and the simulated semiconductor quantum dot device is of qualified quality.

[0096] The second quality determination unit is used to determine that when none of the multiple wave functions are in a bound state, the simulated semiconductor quantum dot device cannot form a quantum dot, and the simulated semiconductor quantum dot device is of unqualified quality.

[0097] Optionally, the device further includes:

[0098] An optimization module is used to adjust the set simulation parameters to optimize the quality of the simulated semiconductor quantum dot device.

[0099] Regarding the apparatus in the above embodiments, the process of performing each step has been described in detail in the embodiments of the method, and will not be elaborated here.

[0100] Based on the same inventive concept, embodiments of this specification also provide an electronic device.

[0101] The following describes embodiments of the electronic device of the present invention, which can be considered as specific implementations of the methods and apparatus embodiments of the present invention described above. Details described in the embodiments of the electronic device of the present invention should be considered as supplements to the methods or apparatus embodiments described above; details not disclosed in the embodiments of the electronic device of the present invention can be implemented with reference to the methods or apparatus embodiments described above.

[0102] Reference Figure 9 This is a schematic diagram of an electronic device provided as an embodiment of this specification. Refer to the following... Figure 9 The electronic device 300 according to this embodiment of the present invention will be described. Figure 9 The electronic device 300 shown is merely an example and should not impose any limitations on the functionality and scope of use of the embodiments of the present invention.

[0103] like Figure 9 As shown, the electronic device 300 is presented in the form of a general-purpose computing device. The components of the electronic device 300 may include, but are not limited to: at least one processing unit 310, at least one storage unit 320, a bus 330 connecting different device components (including storage unit 320 and processing unit 310), a display unit 340, etc.

[0104] The storage unit stores program code that can be executed by the processing unit 310, causing the processing unit 310 to perform the steps described in the processing method section of this specification according to various exemplary embodiments of the present invention. For example, the processing unit 310 can perform, for example...Figure 7 The steps are shown.

[0105] The storage unit 320 may include a readable medium in the form of a volatile storage unit, such as a random access memory unit (RAM) 3201 and / or a cache storage unit 3202, and may further include a read-only memory unit (ROM) 3203.

[0106] The storage unit 320 may also include a program / utility 3204 having a set (at least one) of program modules 3205, such program modules 3205 including but not limited to: operating devices, one or more application programs, other program modules and program data, each or some combination of these examples may include an implementation of a network environment.

[0107] Bus 330 can represent one or more of several types of bus structures, including a memory cell bus or memory cell controller, a peripheral bus, a graphics acceleration port, a processing unit, or a local bus using any of the various bus structures.

[0108] Electronic device 300 can also communicate with one or more external devices 400 (e.g., keyboard, pointing device, Bluetooth device, etc.), and with one or more devices that enable a user to interact with the electronic device 300, and / or with any device that enables the electronic device 300 to communicate with one or more other computing devices (e.g., router, modem, etc.). This communication can be performed via input / output (I / O) interface 350. Furthermore, electronic device 300 can also communicate with one or more networks (e.g., local area network (LAN), wide area network (WAN), and / or public networks, such as the Internet) via network adapter 360. Network adapter 360 can communicate with other modules of electronic device 300 via bus 330. It should be understood that, although... Figure 9 As not shown, other hardware and / or software modules may be used in conjunction with electronic device 300, including but not limited to: microcode, device drivers, redundant processing units, external disk drive arrays, RAID devices, tape drives, and data backup storage devices.

[0109] Through the above description of the embodiments, those skilled in the art will readily understand that the exemplary embodiments described in this invention can be implemented by software or by combining software with necessary hardware. Therefore, the technical solutions according to the embodiments of this invention can be embodied in the form of a software product, which can be stored in a computer-readable storage medium (such as a CD-ROM, USB flash drive, external hard drive, etc.) or on a network, including several instructions to cause a computing device (such as a personal computer, server, or network device, etc.) to execute the above-described method according to this invention. When the computer program is executed by a data processing device, it enables the computer-readable medium to implement the above-described method of this invention, i.e.: as... Figure 7 The method shown.

[0110] Reference Figure 10 This is a schematic diagram of a computer-readable medium provided for embodiments of this specification.

[0111] accomplish Figure 7 The computer program of the method shown can be stored on one or more computer-readable media. A computer-readable medium can be a readable signal medium or a readable storage medium. A readable storage medium can be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor device, apparatus, or any combination thereof. More specific examples (a non-exhaustive list) of readable storage media include: an electrical connection having one or more wires, a portable disk, a hard disk, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage device, magnetic storage device, or any suitable combination thereof.

[0112] The computer-readable storage medium may include data signals propagated in baseband or as part of a carrier wave, carrying readable program code. Such propagated data signals may take various forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination thereof. The readable storage medium may also be any readable medium other than a readable storage medium, capable of transmitting, propagating, or transmitting a program for use by or in connection with an instruction execution device, apparatus, or apparatus. The program code contained on the readable storage medium may be transmitted using any suitable medium, including but not limited to wireless, wired, optical fiber, RF, etc., or any suitable combination thereof.

[0113] Program code for performing the operations of this invention can be written in any combination of one or more programming languages, including object-oriented programming languages ​​such as Java and C++, and conventional procedural programming languages ​​such as C or similar languages. The program code can execute entirely on the user's computing device, partially on the user's device, as a standalone software package, partially on the user's computing device and partially on a remote computing device, or entirely on a remote computing device or server. In cases involving remote computing devices, the remote computing device can be connected to the user's computing device via any type of network, including a local area network (LAN) or a wide area network (WAN), or it can be connected to an external computing device (e.g., via the Internet using an Internet service provider).

[0114] In summary, this invention can be implemented in hardware, or as software modules running on one or more processors, or a combination thereof. Those skilled in the art will understand that in practice, general-purpose data processing devices such as microprocessors or digital signal processors (DSPs) can be used to implement some or all of the functions of some or all of the components according to the embodiments of the invention. The invention can also be implemented as a device or apparatus program (e.g., a computer program and computer program product) for performing part or all of the methods described herein. Such programs implementing the invention can be stored on a computer-readable medium or can take the form of one or more signals. Such signals can be downloaded from an Internet website, provided on a carrier signal, or provided in any other form.

[0115] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the present invention is not inherently related to any specific computer, virtual device, or electronic device, and various general-purpose devices can also implement the present invention. The above descriptions are merely specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

[0116] The various embodiments in this specification are described in a progressive manner. The same or similar parts between the various embodiments can be referred to each other. Each embodiment focuses on describing the differences from other embodiments.

[0117] The above description is merely an embodiment of this application and is not intended to limit the scope of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application.

Claims

1. A method for judging the quality of simulated semiconductor quantum dot devices, characterized in that, include: Multiple wavefunctions corresponding to the confined potential distribution map of the simulated semiconductor quantum dot device are determined, and wavefunction images corresponding to the multiple wavefunctions are constructed; the confined potential distribution map is a potential distribution map of a finite region; Determine the maximum value of the wave function in the wave function image, the value of the wave function on the boundary, and preset the weight of the maximum value of the wave function; When the values ​​of wave functions on the boundaries in the wave function image are all less than the maximum value of the wave function after a preset weight, the wave function is in a bound state, the simulated semiconductor quantum dot device can form quantum dots, and the simulated semiconductor quantum dot device is of qualified quality.

2. The method as described in claim 1, characterized in that, Before determining the multiple wavefunctions corresponding to the confinement potential distribution of the simulated semiconductor quantum dot device, the process includes: Use a 3D finite element mesh generator to draw a simulated semiconductor quantum dot device; Simulation parameters are set for the simulated semiconductor quantum dot device.

3. The method as described in claim 2, characterized in that, Calculate the wave function corresponding to the confinement potential distribution of the simulated semiconductor quantum dot device, including: The potential distribution data of the simulated semiconductor quantum dot device are calculated based on the simulation parameters and the preset potential distribution function. Construct a potential distribution map based on the described potential distribution data; The potential distribution map of a limited region selected from the potential distribution map of the simulated semiconductor quantum dot device is obtained as a confined potential distribution map. The wave function corresponding to the confinement potential distribution of the simulated semiconductor quantum dot device is calculated by calling the Schrödinger equation solver.

4. The method as described in claim 3, characterized in that, The preset potential distribution function includes the Poisson equation; The step of calculating the potential distribution data of the simulated semiconductor quantum dot device based on the simulation parameters and the preset potential distribution function includes: The potential distribution data of the simulated semiconductor quantum dot device are calculated based on the simulation parameters and the Poisson equation.

5. The method as described in claim 1, characterized in that, The method further includes: When the value of the wavefunction at the boundary in the wavefunction image is greater than or equal to the maximum value of the wavefunction after a preset weight, the wavefunction is in a scattering state.

6. The method as described in claim 5, characterized in that, The method further includes: When none of the multiple wave functions are in a bound state, the simulated semiconductor quantum dot device cannot form a quantum dot, and the simulated semiconductor quantum dot device is of substandard quality.

7. The method as described in claim 2, characterized in that, After determining the quality of the simulated semiconductor quantum dot device based on the states of multiple wave functions, the process includes: The simulation parameters are adjusted to optimize the quality of the simulated semiconductor quantum dot device.

8. A quality judgment device for a simulated semiconductor quantum dot device, implemented based on the method of any one of claims 1-7, characterized in that... ,include: A wavefunction image construction module is used to determine multiple wavefunctions corresponding to the confined potential distribution map of the simulated semiconductor quantum dot device, and to construct wavefunction images corresponding to the multiple wavefunctions; the confined potential distribution map is a potential distribution map of a finite region; The numerical determination module is used to determine the maximum value of the wave function in the wave function image, the value of the wave function on the boundary, and to preset the weight of the maximum value of the wave function. The quality determination module is used to determine that when the values ​​of wave functions on the boundaries in the wave function image are all less than the maximum value of the wave function after a preset weight, the wave function is in a bound state, the simulated semiconductor quantum dot device can form quantum dots, and the simulated semiconductor quantum dot device is of qualified quality.

9. An electronic device, characterized in that, The method includes a memory and a processor, wherein the memory stores a computer program and the processor is configured to run the computer program to perform the method according to any one of claims 1 to 7.

10. A storage medium, characterized in that, The storage medium stores a computer program, which is configured to execute the method according to any one of claims 1 to 7 when it is run.

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