Radio frequency front-end module and electronic equipment

Abstract

The embodiment of the invention provides a radio frequency front-end module and electronic equipment, the radio frequency front-end module comprises a substrate, a first filter chip, an input matching circuit and an output matching circuit, the input matching circuit is connected to the input end of the first filter chip, and the output matching circuit is connected to the output end of the first filter chip; wherein a grounding metal film for grounding is arranged on the substrate; the grounding metal film at least comprises a first metal film, and the first metal film is at least partially located between the first area and the second area of the substrate; the first area is an area corresponding to the input end of the first filter chip and / or the input matching circuit, and the second area is an area corresponding to the output end of the first filter chip and / or the output matching circuit. According to the radio frequency front-end module, coupling interference of radio frequency signals can be prevented, the signal quality of the radio frequency signals input into the first filter chip and the signal quality of the radio frequency signals output by the first filter chip are improved, and the performance of the radio frequency front-end module is further improved.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to a radio frequency front-end module and electronic equipment. Background Art

[0002] In communication equipment, the RF front-end module refers to the part between the antenna and the transceiver, which usually includes a power amplifier, a switch, a low-noise amplifier, a filter, etc.

[0003] The filter can form a receiving link with a low-noise amplifier, or a transmitting link with a power amplifier. In order to reduce the loss during signal transmission, an impedance matching network is usually set at the input and output ends of the filter. However, coupling interference is easily generated between different impedance matching networks, which reduces the performance of the RF front-end module. Summary of the invention

[0004] The present application provides a radio frequency front-end module and an electronic device, which can improve the signal quality of the radio frequency signal of the input filter chip and the output radio frequency signal, thereby improving the performance of the radio frequency front-end module.

[0005] In a first aspect, an embodiment of the present application provides a radio frequency front-end module, the radio frequency front-end module comprising:

[0006] substrate;

[0007] A first filter chip, wherein the first filter chip is arranged on the substrate;

[0008] An input matching circuit, wherein the input matching circuit is disposed on the substrate and connected to an input end of the first filter chip;

[0009] An output matching circuit, wherein the output matching circuit is disposed on the substrate and connected to an output end of the first filter chip;

[0010] Among them, a grounding metal film for grounding is provided on the substrate; the grounding metal film includes at least a first metal film, and the first metal film is at least partially located between a first area and a second area of ​​the substrate; the first area is the input end of the first filter chip and / or the area corresponding to the input matching circuit, and the second area is the output end of the first filter chip and / or the area corresponding to the output matching circuit.

[0011] In a second aspect, an embodiment of the present application provides a radio frequency front-end module, the radio frequency front-end module comprising:

[0012] substrate;

[0013] A first filter chip and a first matching circuit connected to the first filter chip, wherein the first filter chip and the first matching circuit are arranged in a first substrate region of the substrate;

[0014] A second filter chip and a second matching circuit connected to the second filter chip, wherein the second filter chip and the second matching circuit are arranged in a second substrate region of the substrate;

[0015] Wherein, a grounding metal film for grounding is arranged on the substrate; the grounding metal film is at least partially located between the first substrate area and the second substrate area.

[0016] In a third aspect, an embodiment of the present application provides an electronic device, which includes the aforementioned radio frequency front-end module.

[0017] The RF front-end module and electronic device provided in the embodiment of the present application include: a substrate, a first filter chip, an input matching circuit and an output matching circuit, wherein the first filter chip, the input matching circuit and the output matching circuit are arranged on the substrate; the input matching circuit is connected to the input end of the first filter chip, and the output matching circuit is connected to the output end of the first filter chip; wherein a grounding metal film for grounding is arranged on the substrate; the grounding metal film at least includes a first metal film, and the first metal film is at least partially located between the first area and the second area of ​​the substrate; the first area is the input end of the first filter chip and / or the area corresponding to the input matching circuit, and the second area is the output end of the first filter chip and / or the area corresponding to the output matching circuit. The embodiment of the present application can prevent the RF signal in the signal input area from coupling to the signal output area and causing coupling interference to the RF signal output by the first filter chip, and can also prevent the RF signal in the signal output area from coupling to the signal input area and causing coupling interference to the RF signal input to the first filter chip, thereby improving the signal quality of the RF signal input to the first filter chip and the RF signal output by the first filter chip, thereby improving the performance of the RF front-end module.

[0018] It should be understood that the above general description and the following detailed description are merely exemplary and explanatory and cannot limit the disclosure of the embodiments of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0020] Figure 1is a schematic block diagram of a radio frequency front-end module provided in an embodiment of the present application;

[0021] Figure 2 is a schematic block diagram of a radio frequency front-end module in one embodiment of the present application;

[0022] Figure 3 is a schematic block diagram of a radio frequency front-end module in another embodiment of the present application;

[0023] Figure 4 is a schematic block diagram of a radio frequency front-end module in another embodiment of the present application;

[0024] Figure 5 is a schematic block diagram of a radio frequency front-end module provided in another embodiment of the present application;

[0025] Figure 6 It is a schematic block diagram of an electronic device provided in an embodiment of the present application.

[0026] Description of reference numerals:

[0027] 10. substrate; 11. first region; 12. second region; 13. first signal output port; 14. antenna port; 15. third region; 101. first substrate region; 102. second substrate region;

[0028] 20, first filter chip; 21, first output terminal; 22, second output terminal; 23, first input terminal; 231, first filter; 24, second input terminal; 241, second filter; 25, third input terminal; 251, third filter; 201, first matching circuit; 30, input matching circuit; 31, second inductor; 32, third inductor; 33, fourth inductor; 40, output matching circuit; 41, first inductor; 42, first connecting line; 43, second connecting line; 44, third connecting line;

[0029] 50. grounded metal film; 51. first metal film; 52. second metal film; 53. third metal film;

[0030] 60. Second filter chip; 70. Matching circuit; 601. Second matching circuit; 80. Switch chip. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0032] It should be understood that the present application can be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, providing these embodiments will make the disclosure thorough and complete and fully convey the scope of the present application to those skilled in the art. In the accompanying drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals throughout represent the same elements.

[0033] In order to thoroughly understand the present application, detailed structures and steps will be presented in the following description to illustrate the technical solution proposed by the present application. The preferred embodiments of the present application are described in detail below, but in addition to these detailed descriptions, the present application may also have other implementation methods.

[0034] In conjunction with the accompanying drawings, some embodiments of the present application are described in detail below. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0035] See also Figure 1 , Figure 1 It is a schematic block diagram of a radio frequency front-end module provided in an embodiment of the present application.

[0036] like Figure 1 As shown, the RF front-end module includes: a substrate 10, a first filter chip 20, an input matching circuit 30 and an output matching circuit 40. The first filter chip 20, the input matching circuit 30 and the output matching circuit 40 are arranged on the substrate 10.

[0037] Among them, one or more filters are arranged inside the filter chip 20, for example, the filter chip can be a single filter, or multiple filters can share the same wafer, specifically, the filter includes multiple resonators connected in series and parallel, each resonator can be a surface acoustic wave (Surface Acoustic Wave, SAW) resonator or a bulk acoustic wave (Bu l kAcoustic Wave, BAW) resonator. Exemplarily, the resonator in the filter can be a Normal SAW resonator, a TC-SAW (Temperature compensated SAW, temperature compensated surface acoustic wave) resonator, a resonator with a multilayer structure arranged below the piezoelectric layer, an X-BAR (laterally excited film bulk acoustic wave) resonator, a DMS (Double-mode SAW, dual-mode surface acoustic wave) resonator, a longitudinally coupled surface acoustic wave resonator, etc.

[0038] The input matching circuit 30 is connected to the input end of the first filter chip 20, and the output matching circuit 40 is connected to the output end of the first filter chip 20. Specifically, the input end of at least one filter in the first filter chip 20 is connected to the corresponding input matching circuit 30, and the output end of at least one filter in the first filter chip 20 is connected to the corresponding output matching circuit 40.

[0039] The input matching circuit 30 can match the output impedance of the signal source with the input impedance of the first filter chip 20, reduce signal reflection and transmission loss, and thus improve signal transmission efficiency; for example, the input matching circuit 30 includes an input matching inductor, which can be connected in parallel to the input end of the first filter chip 20, that is, the first end of the input matching inductor is connected to the input end of the first filter chip 20, and the second end of the input matching inductor is grounded.

[0040] The output matching circuit 40 can match the output impedance of the first filter chip 20 with the input impedance of the subsequent circuit or load, further reducing signal reflection and transmission loss, thereby improving signal transmission efficiency. For example, the output matching circuit 40 includes an output matching inductor, which can be connected in series between the output end of the first filter chip 20 and the subsequent circuit or load, that is, the first end of the output matching inductor is connected to the output end of the first filter chip 20, and the second end of the output matching inductor is used to connect to the subsequent circuit or load.

[0041] In some embodiments, see Figure 2 and Figure 3 The RF front-end module also includes an antenna port 14 and a switch chip 80. The switch chip 80 includes multiple switch paths, and the switch paths are connected between the antenna port 14 and the corresponding filters. The switch chip 80 is used to turn on the corresponding switch path according to the frequency band of the RF signal received by the antenna port 14 to transmit the received RF signal to the corresponding filter.

[0042] As an implementation mode, the input matching circuit 30 is connected in parallel between the switch chip 80 and the corresponding filter, that is, one end of the input matching circuit 30 is connected to the connection path between the switch chip 80 and the corresponding filter, and the other end is used for grounding. For example, the input matching circuit 30 includes an inductor (which can be called an input matching inductor), and the first end of the inductor in the input matching circuit 30 is connected to the input end of the filter, and the second end of the inductor is grounded to perform impedance matching on the RF signal between the switch chip 80 and the filter, so as to reduce the loss during the transmission of the RF signal.

[0043] The filter is used to filter the radio frequency signal to improve the signal quality of the radio frequency signal. The output matching circuit 40 is used to perform impedance matching on the radio frequency signal output by the filter to reduce the loss during the transmission of the radio frequency signal.

[0044] Among them, Figure 1 and Figure 2 As shown, a grounding metal film 50 for grounding is provided on the substrate 10. For example, the substrate 10 includes a grounding layer, and the grounding metal film 50 can be provided on the grounding layer, or on other layers except the grounding layer, and the grounding metal film 50 of other layers can be connected to the grounding layer through metal vias; it can be understood that the grounding layer can be covered with grounding metal in the entire layer, or grounding metal can be laid in most areas, but some areas can still be used to set ports or circuit elements without grounding.

[0045] It is understood that the substrate 10 generally has multiple metal layers, wherein the grounding metal film 50 can be disposed on one of the metal layers or on multiple metal layers. As an embodiment, the multiple metal layers of the substrate 10 are respectively provided with grounding metal films 50, and the grounding metal films 50 of each metal layer can be connected through metal vias.

[0046] The grounding metal film 50 at least includes a first metal film 51, and the first metal film 51 is at least partially located between the first area 11 and the second area 12 of the substrate 10; the first area 11 is the area corresponding to the input end of the first filter chip 20 and / or the input matching circuit 30, and the second area 12 is the area corresponding to the output end of the first filter chip 20 and / or the output matching circuit 40. For example, the first metal film 51 can be arranged between the input end and the output end of the first filter chip 20, or between the input matching circuit 30 and the output matching circuit 40 of the first filter chip 20, or extend from between the input end and the output end of the first filter chip 20 to between the input matching circuit 30 and the output matching circuit 40.

[0047] For the convenience of description, the first area 11 can be referred to as a signal input area corresponding to the first filter chip 20 , and the second area 12 can be referred to as a signal output area corresponding to the first filter chip 20 .

[0048] By setting a first metal film 51 between the signal input area corresponding to the first filter chip 20 and the signal output area corresponding to the first filter chip 20, the signal input area and the signal output area of ​​the first filter chip 20 are isolated, which can prevent the RF signal in the signal input area from coupling to the signal output area and causing coupling interference to the RF signal output by the first filter chip 20. It can also prevent the RF signal in the signal output area from coupling to the signal input area and causing coupling interference to the RF signal input to the first filter chip 20. The signal quality of the RF signal input to the first filter chip 20 and the RF signal output from the first filter chip 20 can be improved, thereby improving the performance of the RF front-end module.

[0049] In some embodiments, the first metal film 51 is at least partially located between the input matching circuit 30 of the first filter chip 20 and the output matching circuit 40 of the first filter chip 20. For the input matching circuit 30 and the output matching circuit 40 of the same filter, the signal quality of the RF signal input to the first filter chip 20 and the RF signal output from the first filter chip 20 can be improved by isolating them through the grounded first metal film 51, thereby improving the performance of the RF front-end module.

[0050] For example, Figure 2 As shown, the input end of the first filter chip 20 includes a first input end 23 corresponding to the first filter 231, and the first input end 23 is configured to input a radio frequency signal of a first frequency band; the output end of the first filter chip 20 includes a first output end 21 corresponding to the first filter 231, and the first output end 21 is configured to output a radio frequency signal of a first frequency band; wherein, the output matching circuit 40 of the first filter 231 in the first filter chip 20 includes a first inductor 41, and the input matching circuit 30 of the first filter 231 includes a second inductor 31; the first metal film 51 is at least partially located between the first inductor 41 and the second inductor 31.

[0051] It is understandable that the first inductor 41 can be arranged in one or more metal layers of the substrate, and the second inductor 31 can also be arranged in one or more metal layers of the substrate. Optionally, the first inductor 41 and the second inductor 31 can be arranged in different metal layers to reduce the interference between the first inductor 41 and the second inductor 31; or, at least part of the structure of the first inductor 41 and at least part of the structure of the second inductor 31 can be located in the same metal layer to reduce the total number of metal layers of the substrate and reduce the hardware cost of the RF front-end module.

[0052] Optionally, the first metal film 51 can be set in the metal layer where the first inductor 41 is located, or can be set in the metal layer where the second inductor 31 is located, or can be set in the metal layer where the first inductor 41 and the second inductor 31 are located, so as to enhance the isolation effect of the first metal film 51 and save the number of metal layers.

[0053] Optionally, the first metal film 51 may also be arranged in a metal layer other than the metal layer where the first inductor 41 is located or the metal layer where the second inductor 31 is located, so as to facilitate setting a metal wiring in the metal layer where the first inductor 41 is located to connect to the output end of the filter, and to facilitate setting a metal wiring in the metal layer where the second inductor 31 is located to connect to the input end of the filter.

[0054] Exemplarily, the first metal film 51 can be arranged in multiple metal layers. For example, the first metal film 51 is not only arranged in the metal layer where the first inductor 41 and / or the second inductor 31 is located, but also in other metal layers where no inductor is arranged. The first metal film 51 between different metal layers can be connected through metal vias. By arranging the first metal film 51 in more layers, the isolation effect can be improved.

[0055] For example, Figure 2 As shown, the output end of the first filter chip 20 includes a first output end 21 and a second output end 22. The first output end 21 is configured to output a radio frequency signal of a first frequency band, and the second output end 22 is configured to output a radio frequency signal of a second frequency band. The second frequency band is a different operating frequency band from the first frequency band.

[0056] The substrate 10 is provided with a first signal output port 13 , and the first output port 21 and the second output port 22 are connected to the first signal output port 13 through an output matching circuit 40 , that is, the first output port 21 and the second output port 22 of the first filter chip 20 are connected to the same signal output port.

[0057] For example, the frequency of the first frequency band is lower than the frequency of the second frequency band, and the output matching circuit 40 corresponding to the first filter chip 20 includes a first inductor 41, the first inductor 41 is connected in series between the first output terminal 21 and the first signal output port 13, and the second output terminal 22 is connected to the first signal output port 13. The first output terminal 21 and the second output terminal 22 are connected to the same signal output port. Since the frequency of the first frequency band in which the first output terminal 21 works is lower than the frequency of the second frequency band in which the second output terminal 22 works, the inductance required for impedance matching of the first output terminal 21 is larger than the inductance required for impedance matching of the second output terminal 22. By connecting the first inductor 41 in series between the first output terminal 21 and the first signal output port 13, the inductance of the output matching circuit 40 can meet both the output matching requirements of the first frequency band and the output matching requirements of the second frequency band.

[0058] Exemplarily, the first metal film 51 is at least partially disposed between the first inductor 41 and the input matching circuit 30. By disposing the first metal film 51 between the first inductor 41 and the input matching circuit 30, the RF signal input to the first filter chip 20 and the RF signal output from the first output terminal 21 of the first filter chip 20 can be isolated to prevent coupling interference, thereby improving the signal quality of the RF signal input to the first filter chip 20 and the RF signal output from the first filter chip 20, thereby improving the performance of the RF front-end module.

[0059] For example, Figure 2As shown, the output matching circuit 40 corresponding to the first filter chip 20 also includes a first connection line 42, a second connection line 43 and a third connection line 44; the first end of the first inductor 41 is connected to the first output end 21 of the first filter chip 20 through the first connection line 42, and the second end of the first inductor 41 is connected to the first signal output port 13 through the second connection line 43; the second output end 22 of the first filter chip 20 is connected to the first signal output port 13 through the third connection line 44; the first connection line 42, the second connection line 43 and the third connection line 44 include metal traces and / or bonding wires on the substrate 10. The first connection line 42, the second connection line 43 and the third connection line 44 have inductance characteristics for radio frequency signals, and can be used as inductors to perform impedance matching on the radio frequency signal output by the first filter chip 20.

[0060] For example, Figure 2 As shown, the first connection line 42, the second connection line 43 and the third connection line 44 are straight connection lines or folded line connection lines, and the folded line connection lines are open and non-closed connection lines; compared with the impedance matching method of winding a metal coil as an inductor (such as the first inductor 41) on the substrate 10, the impedance matching by the first connection line 42, the second connection line 43 and the third connection line 44 occupies a smaller area on the substrate 10, which is conducive to the miniaturization design of the RF front-end module. By connecting the first inductor 41 in series between the first output terminal 21 and the first signal output port 13, the inductance of the first connection line 42 and the second connection line 43 can be supplemented to meet the output impedance matching requirements of the first frequency band.

[0061] Exemplarily, the first metal film 51 is at least partially disposed between the input matching circuit 30 (including the second inductor 31 and / or the third inductor 32) and at least one of the first connecting wire 42, the second connecting wire 43, and the third connecting wire 44. By disposing the first metal film 51 between the connecting wires in the input matching circuit 30 and the output matching circuit 40 of the first filter chip 20, the RF signal input to the first filter chip 20 and the RF signal output from the first filter chip 20 can be isolated to prevent coupling interference, so as to improve the signal quality of the RF signal input to the first filter chip 20 and the RF signal output from the first filter chip 20, thereby improving the performance of the RF front-end module. Optionally, the first metal film 51 can be disposed in the metal layer where at least one of the first connecting wire 42, the second connecting wire 43, and the third connecting wire 44 is located, or can be disposed in the metal layer where the input matching circuit 30 and the at least one connecting wire are located; the isolation effect of the first metal film 51 can be enhanced, and the number of metal layers occupied can be saved. Optionally, the first metal film 51 may also be disposed on a metal layer other than the metal layer where the input matching circuit 30 is located or the metal layer where the first connecting line 42 , the second connecting line 43 , and the third connecting line 44 are located.

[0062] In some embodiments, please combine Figure 2 See also Figure 3 The input end of the first filter chip 20 includes a first input end 23 and a second input end 24, and the first input end 23 and the second input end 24 are configured to input radio frequency signals of different frequency bands; for example, the first input end 23 is configured to input radio frequency signals of a first frequency band, and the second input end 24 is configured to input radio frequency signals of a second frequency band.

[0063] The input matching circuit 30 of the first filter chip 20 includes a second inductor 31 and a third inductor 32. The second inductor 31 is connected to the first input terminal 23 and is used to perform impedance matching on the RF signal input to the first input terminal 23; the third inductor 32 is connected to the second input terminal 24 and is used to perform impedance matching on the RF signal input to the second input terminal 24. For example, Figure 3 As shown, the second inductor 31 and the third inductor 32 are respectively connected in parallel at the corresponding input terminals. For example, the first input terminal 23 is grounded through the second inductor 31 , and the second input terminal 24 is grounded through the third inductor 32 .

[0064] The first metal film 51 is at least partially located between the output matching circuit 40 and the second inductor 31, and / or the first metal film 51 is at least partially located between the output matching circuit 40 and the third inductor 32. For example, the first metal film 51 is at least partially located between the first inductor 41 and the second inductor 31, and / or at least partially located between the first inductor 41 and the third inductor 32, and / or at least partially located between the second inductor 31 and the first connecting line 42, the second connecting line 43, and the third connecting line 44, and / or at least partially located between the third inductor 32 and the first connecting line 42, the second connecting line 43, and the third connecting line 44.

[0065] Optionally, the first metal film 51 can be disposed on the metal layer where the output matching circuit 40 is located, or can be disposed on the metal layer where the second inductor 31 is located, or can be disposed on the metal layer where the third inductor 32 is located, or can be disposed on the metal layer where the output matching circuit 40 and the second inductor 31 and / or the third inductor 32 are located; the isolation effect of the first metal film 51 can be enhanced, and the number of metal layers occupied can be saved. For example, the first metal film 51 can be disposed on the metal layer of the top layer of the substrate 10 or on the metal layer inside the substrate 10.

[0066] It should be noted that the first metal films 51 arranged at different positions can be arranged at intervals or connected. For example, adjacent first metal films 51 can be arranged in an integrated manner. For example, the first metal film 51 between the output matching circuit 40 and the third inductor 32, the first metal film 51 between the first inductor 41 and the second inductor 31, the first metal film 51 between the first inductor 41 and the third inductor 32, the first metal film 51 between the second inductor 31 and the first connecting line 42, the second connecting line 43, and the third connecting line 44, and the first metal film 51 between the third inductor 32 and the first connecting line 42, the second connecting line 43, and the third connecting line 44 can be connected to each other. When the first metal films 51 at different positions are connected, the isolation effect can be improved.

[0067] In some embodiments, Figure 2 As shown, the input end of the first filter chip 20 further includes a third input end 25, and the input matching circuit 30 further includes a fourth inductor 33, and the fourth inductor 33 is connected to the third input end 25. For example, Figure 3 As shown, the third input terminal 25 is grounded via a fourth inductor 33 .

[0068] Exemplarily, the distance between the fourth inductor 33 and the output matching circuit 40 is greater than the distance between the second inductor 31 and / or the third inductor 32 and the output matching circuit 40; for example, the distance between the fourth inductor 33 and the output matching circuit 40 is greater than the distance between the second inductor 31 and the output matching circuit 40, or the distance between the fourth inductor 33 and the output matching circuit 40 is greater than the distance between the third inductor 32 and the output matching circuit 40, or the distance between the fourth inductor 33 and the output matching circuit 40 is greater than the distance between the second inductor 31 and the output matching circuit 40 and greater than the distance between the third inductor 32 and the output matching circuit 40. By increasing the distance between the fourth inductor 33 and the output matching circuit 40, the RF signal at the fourth inductor 33 can be prevented from coupling to the signal output area and causing coupling interference to the RF signal output by the first filter chip 20. The RF signal in the signal output area can also be prevented from coupling to the fourth inductor 33 and input into the first filter chip 20 through the third input terminal 25. Therefore, the signal quality of the RF signal input to the first filter chip 20 and the RF signal output from the first filter chip 20 can be improved, thereby improving the performance of the RF front-end module.

[0069] In some embodiments, the third input terminal 25 is configured to output a radio frequency signal in a third frequency band, the frequency of the third frequency band being greater than the frequency of the frequency band corresponding to each of the other input terminals of the first filter chip 20 and being more susceptible to interference; by increasing the distance between the fourth inductor 33 corresponding to the third input terminal 25 and the output matching circuit 40, it is possible to more thoroughly prevent the radio frequency signal at the fourth inductor 33 from coupling to the signal output area and causing coupling interference to the radio frequency signal output by the first filter chip 20, and it is also possible to more thoroughly prevent the radio frequency signal in the signal output area from coupling to the fourth inductor 33 and being input into the first filter chip 20 through the third input terminal 25.

[0070] Optional, such as Figure 2 As shown, the first metal film 51 is at least partially located between the output matching circuit 40 and the fourth inductor 33. For example, the first metal film 51 is at least partially located between the first inductor 41 and the fourth inductor 33, and / or at least partially located between the fourth inductor 33 and the first connecting line 42, the second connecting line 43, and the third connecting line 44; for example, the first metal film 51 is at least partially located between the first inductor 41 and the fourth inductor 33, or the first metal film 51 is at least partially located between the fourth inductor 33 and the first connecting line 42, the second connecting line 43, and the third connecting line 44, or the first metal film 51 is at least partially located between the first inductor 41 and the fourth inductor 33 and at least partially located between the fourth inductor 33 and the first connecting line 42, the second connecting line 43, and the third connecting line 44. To improve the signal quality of the RF signal input to the first filter chip 20 and the RF signal output from the first filter chip 20, thereby improving the performance of the RF front-end module. Optionally, the first metal film 51 can be set in the metal layer where the output matching circuit 40 is located, or can be set in the metal layer where the fourth inductor 33 is located, or can be set in the metal layer where the output matching circuit 40 and the fourth inductor 33 are located. This can enhance the isolation effect of the first metal film 51 and save the number of metal layers.

[0071] Optional, such as Figure 4 As shown, the first metal film 51 is not disposed in the area Z around the fourth inductor 33 , and the size of the area Z around the fourth inductor 33 is less than or equal to twice the size of the fourth inductor 33 .

[0072] Optionally, the first metal film 51 is not disposed between the fourth inductor 33 and at least one other inductor in the input matching circuit 30. Figure 4 As shown, the first metal film 51 is not disposed between the fourth inductor 33 and the third inductor 32 , so that other devices or metal wirings can be disposed between the fourth inductor 33 and the third inductor 32 .

[0073] In some embodiments, the third input terminal 25 is configured to output a radio frequency signal of a third frequency band, and the frequency of the third frequency band is greater than the frequency of the frequency band corresponding to each of the remaining input terminals of the first filter chip 20; and / or the number of frequency bands carrier aggregated (CA) with the third frequency band is greater than the number of frequency bands carrier aggregated with the frequency bands corresponding to each of the remaining input terminals; for example, the third input terminal 25 is configured to output a radio frequency signal of a third frequency band, and the frequency of the third frequency band is greater than the frequency of the frequency band corresponding to each of the remaining input terminals of the first filter chip 20; or the number of frequency bands carrier aggregated (CA) with the third frequency band is greater than the number of frequency bands carrier aggregated with the frequency bands corresponding to each of the remaining input terminals; or the third input terminal 25 is configured to output a radio frequency signal of a third frequency band, and the frequency of the third frequency band is greater than the frequency of the frequency band corresponding to each of the remaining input terminals of the first filter chip 20, and the number of frequency bands carrier aggregated (CA) with the third frequency band is greater than the number of frequency bands carrier aggregated with the frequency bands corresponding to each of the remaining input terminals. The distance between the fourth inductor 33 and the first filter chip 20 is greater than the distance between the inductor corresponding to each other input end in the input matching circuit 30 (such as the second inductor 31 and the third inductor 32) and the first filter chip 20. Optionally, the distance between the inductor and the chip may be the distance between the two points closest to the inductor and the chip, or may be the distance between the center of the inductor and the center of the chip.

[0074] Carrier aggregation combines multiple frequency bands together so that the RF front-end module can transmit data in multiple frequency bands at the same time, thereby achieving higher data throughput. However, since signals in different frequency bands are received or transmitted at the same time during carrier aggregation, crosstalk is easily generated between them. In this embodiment, the fourth inductor 33 corresponding to the third frequency band aggregated with more frequency bands is set at a position away from the first filter chip 20, which can reduce the crosstalk between the RF signal at the fourth inductor 33 and other RF signals corresponding to the first filter chip 20.

[0075] For example, Figure 2 and Figure 3 As shown, the first filtering chip 20 includes at least a first filter 231 corresponding to the first input terminal 23, a second filter 241 corresponding to the second input terminal 24, and a third filter 251 corresponding to the third input terminal 25; the third frequency band corresponding to the third input terminal 25 is at least carrier aggregated with the first frequency band corresponding to the first input terminal 23.

[0076] It should be noted that the frequency of the third frequency band corresponding to the third input terminal 25 is relatively large, and / or the number of frequency bands requiring carrier aggregation is larger, making it easier for the RF signal of the third frequency band to generate crosstalk with other RF signals. By increasing the distance between the fourth inductor 33 and the first filter chip 20, the crosstalk between the RF signal at the fourth inductor 33 and other RF signals corresponding to the first filter chip 20 can be reduced, thereby improving the performance of the RF front-end module.

[0077] The third frequency band corresponding to the third input terminal 25 is at least aggregated with the first frequency band carrier corresponding to the first input terminal 23, and the second frequency band corresponding to the second input terminal 24 is not aggregated with the first frequency band carrier corresponding to the first input terminal 23 and is not aggregated with the third frequency band carrier corresponding to the third input terminal 25. Optionally, at least the second filter 241 corresponding to the second input terminal 24 is arranged between the first filter 231 corresponding to the first input terminal 23 and the third filter 251 corresponding to the third input terminal 25. By arranging filters corresponding to frequency bands that do not participate in the carrier aggregation between filters corresponding to multiple frequency bands of carrier aggregation, filters corresponding to multiple frequency bands of carrier aggregation can be isolated, and the distance between multiple filters working at the same time can be made farther, which can reduce the crosstalk of RF signals between filters of different frequency bands when they work at the same time, thereby improving the performance of the RF front-end module.

[0078] The third frequency band corresponding to the third input terminal 25 is at least aggregated with the first frequency band carrier corresponding to the first input terminal 23, and the second frequency band corresponding to the second input terminal 24 is not aggregated with the first frequency band carrier corresponding to the first input terminal 23 and is not aggregated with the third frequency band carrier corresponding to the third input terminal 25. Optionally, the distance between the fourth inductor 33 corresponding to the third input terminal 25 and the second inductor 31 corresponding to the first input terminal 23 is greater than the distance between the second inductor 31 corresponding to the first input terminal 23 and the third inductor 32 corresponding to the second input terminal 24, and is greater than the distance between the fourth inductor 33 corresponding to the third input terminal 25 and the third inductor 32 corresponding to the second input terminal 24. For example, at least the second filter 241 is arranged between the first filter 231 and the third filter 251, and the distance between the fourth inductor 33 and the second inductor 31 is greater than the distance between the second inductor 31 and the third inductor 32, and is greater than the distance between the fourth inductor 33 and the third inductor 32.

[0079] By increasing the distance between the input matching inductors (such as the fourth inductor 33 and the second inductor 31) corresponding to multiple filters working simultaneously (i.e., signal carrier aggregation of different frequency bands transmitted by multiple filters), the crosstalk of RF signals between the input matching inductors corresponding to different filters working simultaneously can be reduced, thereby improving the performance of the RF front-end module.

[0080] In some embodiments, Figure 2As shown, the grounded metal film 50 also includes a second metal film 52, and the second metal film 52 is at least partially disposed between the second inductor 31 and the third inductor 32. For the input matching inductors corresponding to filters of different frequency bands, the input matching inductors corresponding to the different frequency bands can be isolated by the second metal film 52 to prevent crosstalk between the input matching inductors of different frequency bands, thereby improving the performance of the RF front-end module. Optionally, the second metal film 52 can be disposed in the metal layer where the second inductor 31 is located, or can be disposed in the metal layer where the third inductor 32 is located, or can be disposed in the metal layer where the second inductor 31 and the third inductor 32 are located, so as to enhance the isolation effect of the first metal film 51 and save the number of layers of the occupied metal layer. Optionally, the second metal film 52 can also be disposed in a metal layer other than the metal layer where the second inductor 31 is located or the metal layer where the third inductor 32 is located, so as to facilitate the metal wiring to be connected to the input end of the filter in the metal layer where the second inductor 31 is located or the metal layer where the third inductor 32 is located.

[0081] In some embodiments, the inductor in the input matching circuit 30 (such as the second inductor 31, the third inductor 32, and the fourth inductor 33) and / or the inductor in the output matching circuit 40 (such as the first inductor 41) includes a metal trace inductor, and the metal trace inductor is formed on one or more metal layers of the substrate 10. Exemplarily, the metal trace inductor can be wrapped around the substrate 10 in an open coil shape, or can be arranged on the substrate 10 in a straight line or a folded line shape.

[0082] Exemplarily, the first metal film 51 is formed in at least one metal layer where the inductor in the input matching circuit 30 and / or the inductor in the output matching circuit 40 are located, and the first metal film 51 is spaced apart from the inductor in the input matching circuit 30 and / or the inductor in the output matching circuit 40; for example, the first metal film 51 can be set in the metal layer where the output matching circuit 40 is located, or can be set in the metal layer where the second inductor 31 is located, or can be set in the metal layer where the third inductor 32 is located, or can be set in the metal layer where the output matching circuit 40 and the second inductor 31 and / or the third inductor 32 are located. The isolation effect of the first metal film 51 can be enhanced, and the number of metal layers occupied can be saved.

[0083] For example, the first metal film 51 and the second metal film 52 can be disposed on the metal layer of the top layer of the substrate 10 or on the metal layer inside the substrate 10. For example, the first surface of the top layer of the substrate 10 is provided with a first metal layer, and the inductor in the input matching circuit 30 and / or the inductor in the output matching circuit 40 is at least provided on the first metal layer; the first metal film 51 and the second metal film 52 can be formed on the first metal layer. In some embodiments, the other metal layers below the metal layer where the inductor in the input matching circuit 30 and / or the inductor in the output matching circuit 40 are located are not provided with the first metal film 51 and the second metal film 52 in the area corresponding to the inductor, so as to reduce the mutual interference between the inductor and other adjacent circuits and improve the anti-interference capability.

[0084] The metal layer corresponding to the inductor in the input matching circuit 30 and / or the inductor in the output matching circuit 40 forms the first metal film 51 for isolation, which can enhance the isolation effect of the first metal film 51 and save the number of metal layers.

[0085] In some embodiments, Figure 2 As shown, the first metal film 51 is at least partially located between the input end of the first filter chip 20 and the output end of the first filter chip 20 .

[0086] For the input and output ends of the same filter chip, isolation is performed through the grounded first metal film 51, which can improve the signal quality of the RF signal input to the first filter chip 20 and the RF signal output from the first filter chip 20, thereby improving the performance of the RF front-end module.

[0087] For example, Figure 2 As shown, the input ends of the first filter chip 20 (such as the first input end 23, the second input end 24, and the third input end 25) are arranged in the first filter chip 20 along the first side edge (such as the left side edge) of the first filter chip 20, and the output ends of the first filter chip 20 (such as the first output end 21, the second output end 22 and the third output end corresponding to the third input end 25) are arranged in the first filter chip 20 along the second side edge (such as the right side edge) of the first filter chip 20, wherein the first side edge and the second side edge are two opposite side edges; the first metal film 51 is at least partially located between the projection of the first side edge of the first filter chip 20 on the substrate 10 and the projection of the second side edge of the first filter chip 20 on the substrate 10.

[0088] Exemplarily, a first metal layer is provided on the first surface of the substrate 10, and the input and output ends of the first filter chip 20 are connected to the first metal layer; the first metal film 51 is at least partially provided on the first metal layer, and is located between the area corresponding to the input end of the first filter chip 20 and the area corresponding to the output end of the first filter chip 20.

[0089] For example, the first filter chip 20 can be packaged upside down on the first surface of the substrate 10. No other ports are provided in the area between the input end and the output end of the surface of the first filter chip 20 facing the substrate 10. Therefore, a first metal film 51 can be set at a position corresponding to the area on the first metal layer to isolate the input end and the output end of the first filter chip 20.

[0090] In some embodiments, the projection of the input matching circuit 30 along the first preset direction does not overlap with the projection of the output matching circuit 40 along the first preset direction at least in part; and / or the projection of the input matching circuit 30 along the second preset direction does not overlap with the projection of the output matching circuit 40 along the second preset direction; the first preset direction is parallel to the first side of the substrate 10, the second preset direction is parallel to the second side of the substrate 10, and the first side of the substrate 10 is adjacent to the second side. For example, the first preset direction and the second preset direction are perpendicular to each other.

[0091] For example, Figure 2 As shown, the projections of the first inductor 41 and the second inductor 31 of the first filter 231 in the first filter chip 20 along the first preset direction do not overlap, and the projections along the second preset direction do not overlap, that is, the first inductor 41 and the second inductor 31 are staggered on the substrate 10. Compared with the arrangement of the input matching inductor and the output matching inductor of the same filter along a preset direction, the staggered arrangement of the input matching inductor and the output matching inductor of the same filter on the substrate 10 can reduce the coupling between the input matching inductor and the output matching inductor, reduce the signal crosstalk between the matching inductor and the output matching inductor, and thus improve the performance of the RF front-end module.

[0092] In some embodiments, the input matching circuit 30 is disposed close to the input end of the first filter chip 20, which can shorten the wiring length between the input matching circuit 30 and the first filter chip 20, thereby reducing the transmission loss of the RF signal, and reducing parasitic impedance and interference. Optionally, the grounded metal film 50 is at least partially located between the input matching circuit 30 and the first filter chip 20 to reduce signal crosstalk between the input matching circuit 30 and the first filter chip 20.

[0093] In some embodiments, Figure 4As shown, the filter chip further includes a second filter chip 60 and a matching circuit 70 connected to the second filter chip 60, and the grounded metal film 50 further includes a third metal film 53. The third metal film 53 is at least partially located between the third region 15 and the first region 11 of the substrate 10, and / or the third metal film 53 is at least partially located between the third region 15 and the second region 12 of the substrate 10; the third region 15 is a region corresponding to the second filter chip 60 and / or the matching circuit 70 connected to the second filter chip 60.

[0094] By setting a grounded third metal film 53 between different signal input areas corresponding to different filter chips, and / or between the signal input area and the signal output area, the areas corresponding to different filter chips are isolated, which can prevent the RF signals of different filter chips and their matching circuits 70 from coupling with each other and causing coupling interference, and can improve the signal quality of the RF signals corresponding to each filter chip, thereby improving the performance of the RF front-end module.

[0095] The RF front-end module provided in the embodiment of the present application includes: a substrate 10, a first filter chip 20, an input matching circuit 30 and an output matching circuit 40, wherein the first filter chip 20, the input matching circuit 30 and the output matching circuit 40 are arranged on the substrate 10; the input matching circuit 30 is connected to the input end of the first filter chip 20, and the output matching circuit 40 is connected to the output end of the first filter chip 20; wherein a grounding metal film 50 for grounding is arranged on the substrate 10; the grounding metal film 50 at least includes a first metal film 51, and the first metal film 51 is at least partially located between a first area 11 and a second area 12 of the substrate 10; the first area 11 is the input end of the first filter chip 20 and / or the area corresponding to the input matching circuit 30, and the second area 12 is the output end of the first filter chip 20 and / or the area corresponding to the output matching circuit 40. It can prevent the RF signal in the signal input area from coupling to the signal output area and causing coupling interference to the RF signal output by the first filter chip 20. It can also prevent the RF signal in the signal output area from coupling to the signal input area and causing coupling interference to the RF signal input to the first filter chip 20. It can improve the signal quality of the RF signal input to the first filter chip 20 and the RF signal output from the first filter chip 20, thereby improving the performance of the RF front-end module.

[0096] Please refer to the above examples. Figure 5 ,like Figure 5 Shown is a schematic diagram of a radio frequency front-end module provided in another embodiment of the present application.

[0097] like Figure 5As shown, the RF front-end module includes: a substrate 10 , a first filter chip 20 and a first matching circuit 201 connected to the first filter chip 20 , a second filter chip 60 and a second matching circuit 601 connected to the second filter chip 60 .

[0098] Among them, the first filter chip 20 and the first matching circuit 201 are arranged in the first substrate area 101 of the substrate 10, and the second filter chip 60 and the second matching circuit 601 are arranged in the second substrate area 102 of the substrate 10; wherein a grounding metal film 50 for grounding is arranged on the substrate 10; the grounding metal film 50 is at least partially located between the first substrate area 101 and the second substrate area 102.

[0099] In some embodiments, the first matching circuit 201 includes an input matching circuit (such as an input matching inductor) connected to the input end of the first filter chip 20 , and the first substrate region 101 includes at least the first region 11 of the substrate 10 .

[0100] Optionally, the first matching circuit 201 further includes an output matching circuit (such as an output matching inductor) connected to the output end of the first filter chip 20; the grounding metal film 50 is at least partially located between the output matching circuit of the first filter chip 20 and the input matching circuit of the first filter chip 20. The first substrate region 101 may also include the second region 12 of the substrate 10.

[0101] The second substrate region 102 of the substrate 10 may also be referred to as the third region 15 of the substrate 10 .

[0102] The second matching circuit 601 connected to the second filter chip 60 at least includes an input matching circuit (such as an input matching inductor) connected to the input end of the second filter chip 60. Optionally, the second matching circuit 601 may include an output matching circuit (such as an output matching inductor) connected to the output end of the second filter chip 60, or may not include an output matching circuit connected to the output end of the second filter chip 60.

[0103] Among them, Figure 5 As shown, the grounded metal film 50 is at least partially located between an input matching circuit connected to the input end of the first filter chip 20 and an input matching circuit connected to the input end of the second filter chip 60 .

[0104] The RF front-end module provided in the embodiment of the present application includes a substrate 10, a first filter chip 20 and a first matching circuit 201 connected to the first filter chip 20, a second filter chip 60 and a second matching circuit 601 connected to the second filter chip 60, wherein the first filter chip 20 and the first matching circuit 201 are arranged in the first substrate region 101 of the substrate 10, and the second filter chip 60 and the second matching circuit 601 are arranged in the second substrate region 102 of the substrate 10; wherein a grounding metal film 50 for grounding is arranged on the substrate 10; and the grounding metal film 50 is at least partially located between the first substrate region 101 and the second substrate region 102. By arranging the grounding metal film 50 between the substrate 10 regions corresponding to different filter chips, the substrate 10 regions corresponding to different filter chips are isolated, so that the RF signals of different filter chips and their matching circuits 70 can be prevented from coupling with each other to cause coupling interference, and the signal quality of the RF signals corresponding to each filter chip can be improved, thereby improving the performance of the RF front-end module.

[0105] The specific principles and implementation methods of the RF front-end module provided in the embodiment of the present application are similar to those of the RF front-end module of the aforementioned embodiment and will not be repeated here.

[0106] Please refer to the above examples. Figure 6 ,like Figure 6 FIG. 1 is a schematic block diagram of an electronic device provided in another embodiment of the present application. The electronic device includes the aforementioned radio frequency power amplifier.

[0107] The electronic device may be a communication device such as a mobile phone, a tablet computer, a vehicle-mounted terminal, or of course, may also be other communication devices with communication functions. The embodiments of the present application do not limit the specific type of the electronic device.

[0108] The specific principles and implementation methods of the electronic device provided in the embodiment of the present application are similar to those of the RF front-end module of the aforementioned embodiment and will not be repeated here.

[0109] It should be understood that the terminology used in this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0110] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to or coupled to other elements or layers, it may be directly on, adjacent to, connected to or coupled to other elements or layers, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on, directly adjacent to, directly connected to or directly coupled to other elements or layers, there are no intervening elements or layers. It should be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer or part discussed below may be represented as a second element, component, region, layer or part.

[0111] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein for ease of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that the spatially relative terms are intended to include different orientations of the device in use and operation in addition to the orientations shown in the figures. For example, if the device in the accompanying drawings is flipped, then the elements or features described as "under other elements" or "under" or "under" will be oriented as "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0112] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present application. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0113] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed in the present application, and these modifications or replacements should be included in the protection scope of the present application. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A radio frequency front-end module, characterized in that: The radio frequency front-end module comprises: substrate; A first filter chip, wherein the first filter chip is arranged on the substrate; An input matching circuit, wherein the input matching circuit is disposed on the substrate and connected to an input end of the first filter chip; An output matching circuit, wherein the output matching circuit is disposed on the substrate and connected to an output end of the first filter chip; Among them, a grounding metal film for grounding is provided on the substrate; the grounding metal film includes at least a first metal film, and the first metal film is at least partially located between a first area and a second area of ​​the substrate; the first area is the input end of the first filter chip and / or the area corresponding to the input matching circuit, and the second area is the output end of the first filter chip and / or the area corresponding to the output matching circuit.

2. The RF front-end module according to claim 1, characterized in that: The output end of the first filter chip includes a first output end and a second output end, the first output end is configured to output a radio frequency signal of a first frequency band, and the second output end is configured to output a radio frequency signal of a second frequency band, and the frequency of the first frequency band is lower than the frequency of the second frequency band; A first signal output port is provided on the substrate, the output matching circuit includes a first inductor, the first inductor is connected in series between the first output port and the first signal output port, and the second output port is connected to the first signal output port.

3. The RF front-end module according to claim 2, characterized in that: The output matching circuit also includes a first connecting line, a second connecting line and a third connecting line; the first end of the first inductor is connected to the first output end through the first connecting line, and the second end of the first inductor is connected to the first signal output port through the second connecting line; the second output end is connected to the first signal output port through the third connecting line; the first connecting line, the second connecting line and the third connecting line include metal routing and / or bonding wires on the substrate.

4. The RF front-end module according to claim 2, characterized in that: The first metal film is at least partially disposed between the first inductor and the input matching circuit.

5. The RF front-end module according to claim 3, characterized in that: The first metal film is at least partially disposed between the input matching circuit and at least one of the first connecting line, the second connecting line, and the third connecting line.

6. The RF front-end module according to claim 1, characterized in that: The input end of the first filter chip includes a first input end and a second input end, and the first input end and the second input end are configured to input radio frequency signals of different frequency bands; the input matching circuit includes a second inductor and a third inductor, the second inductor is connected to the first input end, and the third inductor is connected to the second input end; The first metal film is at least partially located between the output matching circuit and the second inductor, and / or the first metal film is at least partially located between the output matching circuit and the third inductor.

7. The RF front-end module according to claim 6, characterized in that: The first input terminal is grounded through the second inductor, and the second input terminal is grounded through the third inductor.

8. The RF front-end module according to claim 6, characterized in that: The input end of the first filter chip further includes a third input end, and the input matching circuit further includes a fourth inductor, and the fourth inductor is connected to the third input end; the distance between the fourth inductor and the output matching circuit is greater than the distance between the second inductor and / or the third inductor and the output matching circuit; The first metal film is not disposed in the area around the fourth inductor, and the size of the area around the fourth inductor is less than or equal to twice the size of the fourth inductor; or The first metal film is at least partially located between the output matching circuit and the fourth inductor.

9. The RF front-end module according to claim 8, characterized in that: The third input end is configured to output a radio frequency signal of a third frequency band, the frequency of the third frequency band being greater than the frequency of the frequency band corresponding to each of the remaining input ends of the first filter chip; and / or the number of frequency bands aggregated with the third frequency band carrier is greater than the number of frequency bands aggregated with the frequency band carrier corresponding to each of the remaining input ends; The distance between the fourth inductor and the first filter chip is greater than the distance between the inductor corresponding to each of the remaining input ends in the input matching circuit and the first filter chip.

10. The RF front-end module according to claim 9, characterized in that: The first filter chip at least includes a first filter corresponding to the first input end, a second filter corresponding to the second input end, and a third filter corresponding to the third input end; the third frequency band is at least carrier aggregated with the first frequency band corresponding to the first input end; At least the second filter is arranged between the first filter and the third filter; and / or The distance between the fourth inductor and the second inductor is greater than the distance between the second inductor and the third inductor, and greater than the distance between the fourth inductor and the third inductor.

11. The RF front-end module according to claim 6, characterized in that: The grounded metal film further includes a second metal film, and the second metal film is at least partially disposed between the second inductor and the third inductor.

12. The RF front-end module according to any one of claims 6 to 11, characterized in that: The inductor in the input matching circuit and / or the inductor in the output matching circuit comprises a metal trace inductor, and the metal trace inductor is formed in one or more metal layers of the substrate; At least part of the metal film is formed in at least one metal layer where the inductor in the input matching circuit and / or the inductor in the output matching circuit are located, and the metal film is spaced apart from the inductor in the input matching circuit and / or the inductor in the output matching circuit.

13. The RF front-end module according to any one of claims 1 to 11, characterized in that: The first metal film is at least partially located between the input end of the first filter chip and the output end of the first filter chip.

14. The RF front-end module according to claim 13, characterized in that: The input end of the first filter chip is arranged in the first filter chip along a first side of the first filter chip, and the output end of the first filter chip is arranged in the first filter chip along a second side of the first filter chip, wherein the first side and the second side are two opposite sides; The first metal film is at least partially located between a projection of a first side of the first filter chip on the substrate and a projection of a second side of the first filter chip on the substrate.

15. The RF front-end module according to claim 13, characterized in that: A first metal layer is provided on the first surface of the substrate, and the input end and the output end of the first filter chip are connected to the first metal layer; The first metal film is at least partially disposed on the first metal layer and is located between a region corresponding to an input end of the first filter chip and a region corresponding to an output end of the first filter chip.

16. The RF front-end module according to any one of claims 1 to 11, characterized in that: The projection of the input matching circuit along a first preset direction does not overlap with the projection of the output matching circuit along the first preset direction at least in part; and / or the projection of the input matching circuit along a second preset direction does not overlap with the projection of the output matching circuit along the second preset direction; The first preset direction is parallel to a first side of the substrate, the second preset direction is parallel to a second side of the substrate, and the first side of the substrate is adjacent to the second side.

17. The RF front-end module according to claim 16, characterized in that: The input matching circuit is arranged close to the input end of the first filter chip.

18. The radio frequency front-end module according to any one of claims 1 to 11, characterized in that: The filter chip further includes a second filter chip and a matching circuit connected to the second filter chip, and the grounded metal film further includes a third metal film; The third metal film is at least partially located between the third area of ​​the substrate and the first area, and / or the third metal film is at least partially located between the third area of ​​the substrate and the second area; the third area is the area corresponding to the second filter chip and / or the matching circuit connected to the second filter chip.

19. The RF front-end module according to any one of claims 1 to 11, characterized in that: The RF front-end module further includes an antenna port and a switch chip, wherein the switch chip includes a plurality of switch paths, and the switch paths are connected between the antenna port and the corresponding filter; the switch chip is used to conduct the corresponding switch path according to the frequency band of the RF signal received by the antenna port, so as to transmit the received RF signal to the corresponding filter; The input matching circuit is connected in parallel between the switch chip and the corresponding filter.

20. A radio frequency front-end module, characterized in that: The radio frequency front-end module comprises: substrate; A first filter chip and a first matching circuit connected to the first filter chip, wherein the first filter chip and the first matching circuit are arranged in a first substrate region of the substrate; A second filter chip and a second matching circuit connected to the second filter chip, wherein the second filter chip and the second matching circuit are arranged in a second substrate region of the substrate; Wherein, a grounding metal film for grounding is arranged on the substrate; the grounding metal film is at least partially located between the first substrate area and the second substrate area.

21. The radio frequency front-end module according to claim 20, characterized in that: The first matching circuit includes an input matching circuit connected to the input end of the first filter chip, and the second matching circuit includes an input matching circuit connected to the input end of the second filter chip; The grounded metal film is at least partially located between an input matching circuit connected to the input end of the first filter chip and an input matching circuit connected to the input end of the second filter chip.

22. The radio frequency front-end module according to claim 21, characterized in that: The first matching circuit also includes an output matching circuit connected to the output end of the first filter chip; the grounded metal film is at least partially located between the output matching circuit of the first filter chip and the input matching circuit of the first filter chip.

23. An electronic device, characterized in that: The electronic device comprises a radio frequency front-end module as described in any one of claims 1 to 22.

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