Light-emitting device, preparation method thereof and display device

Abstract

The embodiment of the invention provides a light-emitting device, a preparation method thereof and a display device. The light-emitting device comprises an anode, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode which are sequentially stacked, the light-emitting device further comprises an electron compensation layer and / or a hole compensation layer, the electron compensation layer is arranged between the cathode and the electron transport layer, and the hole compensation layer is arranged between the anode and the hole transport layer. The electron compensation layer in the light-emitting device can supplement electrons into the electron transmission layer, so that the light-emitting device can reach carrier balance to the maximum extent under the high-voltage condition, and / or the hole compensation layer can supplement holes into the hole transmission layer, so that the light-emitting device can reach carrier balance to the maximum extent under the low-voltage condition, and the light-emitting device can reach carrier balance to the maximum extent under the high-voltage condition. Therefore, the performance consistency of the light-emitting device is improved.

Description

Technical Field

[0001] The present application relates to the field of light-emitting devices, and in particular to a light-emitting device and a method for preparing the same, and a display device. Background Art

[0002] Electroluminescent devices include QLED (Organic Light-Emitting Diode) and OLED (Quantum Dot Light Emitting Diodes). QLED has the advantages of high color saturation, wet process preparation and high stability, which has attracted more and more attention in the research of QLED. OLED has a wide range of applications in display, lighting, smart wearable and other fields due to its good self-luminous properties, high contrast, fast response and flexible display.

[0003] However, the electrical performance of existing electroluminescent devices under low voltage (0-1V), normal voltage (1V-4V), and high voltage (4V-8V) conditions varies greatly. Specifically, the electrical performance of electroluminescent devices under low voltage and normal voltage conditions varies greatly, and the electrical performance of electroluminescent devices under normal voltage and high voltage conditions varies greatly, which seriously affects the consistency of the electrical performance of electroluminescent devices. Summary of the invention

[0004] The embodiments of the present application provide a light-emitting device and a method for manufacturing the same, and a display device. The electrical performance of the light-emitting device has good consistency.

[0005] In a first aspect, an embodiment of the present application provides a light-emitting device, comprising an anode, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode stacked in sequence;

[0006] The light-emitting device also includes an electron compensation layer and / or a hole compensation layer. The electron compensation layer is arranged between the cathode and the electron transport layer, and the electron compensation layer is used to supplement electrons into the electron transport layer; the hole compensation layer is arranged between the anode and the hole transport layer, and the hole compensation layer is used to supplement holes into the hole transport layer.

[0007] In some embodiments, the electron compensation layer is used to generate a light emitting device with a current density greater than or equal to 1 mA / cm 2 replenishing electrons in the electron transport layer in the case of

[0008] The hole compensation layer is used for the current density of the light emitting device to be less than or equal to 10 -5 mA / cm 2 Under the condition of the present invention, holes are replenished in the hole transport layer.

[0009] In some embodiments, the material of the hole compensation layer includes at least one of CoO, Ag2O, PbO, Hg2O, CuI, and Sb2S3; and / or the thickness of the hole compensation layer is 10nm-50nm; and / or the material of the electron compensation layer includes at least one of SiP, SiAs, SbSi, GeTe, GeP, GeAs, V2O5, MoO3, and Ta2O5; and / or the thickness of the electron compensation layer is 10nm-50nm.

[0010] In some embodiments, the material of the hole transport layer includes 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl))-biphenyl aniline), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N ,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] , 1,3-di(carbazole-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, polyspirofluorene and its derivatives, polythiophene and its derivatives; and / or

[0011] The material of the electron transport layer includes at least one of ZnO, SnO2, ITO, Fe2O3, CrO3, TiO2, WO3, CdO, CuO, and MoO2; and / or

[0012] The material of the light-emitting layer comprises one or more of an organic light-emitting material and a quantum dot; wherein the organic light-emitting material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials and exciplex light-emitting materials; the quantum dots are selected from one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots;

[0013] The material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot, and the material of the shell of the core-shell structure quantum dot are independently selected from at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound, or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeT e, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InA s, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAl NAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPS b, the IV-VI group compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, the I-III-VI group compound is selected from one or more of CuInS, CuInSe and AgInS; the general structural formula of the inorganic perovskite quantum dot is AMX3, wherein A is Cs + ion, M is a divalent metal cation, M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2 + Cr 2+ , Mn 2+ 、Co2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; the general structural formula of the organic perovskite quantum dot is CMX3, C is a carboxamidine group; the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX3, and B is selected from an organic amine cation.

[0014] In some embodiments, the hole compensation layer has a thickness of 10 nm to 50 nm; and / or

[0015] The thickness of the electron compensation layer is 10nm-50nm; and / or

[0016] The thickness of the anode is 100nm-120nm; and / or

[0017] The thickness of the hole injection layer is 30nm-50nm; and / or

[0018] The thickness of the hole transport layer is 30nm-50nm; and / or

[0019] The thickness of the light-emitting layer is 50nm-70nm; and / or

[0020] The thickness of the electron transport layer is 40nm-60nm; and / or

[0021] The thickness of the cathode is 30nm-100nm.

[0022] In some embodiments, the light-emitting device further includes a hole injection layer, which is disposed between the hole transport layer and the light-emitting layer, and the material of the hole injection layer includes at least one of poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid and its derivatives, copper phthalocyanine, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polydioxyethylthiophene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, transition metal oxides and transition metal sulfur compounds.

[0023] In some embodiments, the materials of the anode and the cathode are independently selected from one or more of a metal, a second carbon material and a second metal oxide, the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca and Mg, the second carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fiber, and the second metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide.

[0024] In a second aspect, an embodiment of the present application provides a light-emitting device, comprising an anode, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode stacked in sequence;

[0025] The light emitting device further comprises an electron compensation layer and / or a hole compensation layer;

[0026] The electron compensation layer is provided between the cathode and the electron transport layer, and the material of the electron compensation layer includes at least one of SiP, SiAs, SbSi, GeTe, GeP, GeAs, V2O5, MoO3, and Ta2O5;

[0027] The hole compensation layer is disposed between the anode and the hole transport layer, and a material of the hole compensation layer includes at least one of CoO, Ag2O, PbO, Hg2O, CuI, and Sb2S3.

[0028] In some embodiments, the material of the hole compensation layer includes at least one of CoO, Ag2O, PbO, Hg2O, CuI, and Sb2S3; and / or the thickness of the hole compensation layer is 10nm-50nm; and / or the material of the electron compensation layer includes at least one of SiP, SiAs, SbSi, GeTe, GeP, GeAs, V2O5, MoO3, and Ta2O5; and / or the thickness of the electron compensation layer is 10nm-50nm.

[0029] In some embodiments, the material of the hole transport layer includes 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl))-biphenyl aniline), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N ,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] , 1,3-di(carbazole-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, polyspirofluorene and its derivatives, polythiophene and its derivatives; and / or

[0030] The material of the electron transport layer includes at least one of ZnO, SnO2, ITO, Fe2O3, CrO3, TiO2, WO3, CdO, CuO, and MoO2; and / or

[0031] The material of the light-emitting layer comprises one or more of an organic light-emitting material and a quantum dot; wherein the organic light-emitting material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials and exciplex light-emitting materials; the quantum dots are selected from one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots;

[0032] The material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot, and the material of the shell of the core-shell structure quantum dot are independently selected from at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound, or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeT e, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InA s, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAl NAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPS b, the IV-VI group compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, the I-III-VI group compound is selected from one or more of CuInS, CuInSe and AgInS; the general structural formula of the inorganic perovskite quantum dot is AMX3, wherein A is Cs + ion, M is a divalent metal cation, M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2 + Cr 2+ , Mn 2+ 、Co2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; the general structural formula of the organic perovskite quantum dot is CMX3, C is a carboxamidine group; the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX3, and B is selected from an organic amine cation.

[0033] In some embodiments, the hole compensation layer has a thickness of 10 nm to 50 nm; and / or

[0034] The thickness of the electron compensation layer is 10nm-50nm; and / or

[0035] The thickness of the anode is 100nm-120nm; and / or

[0036] The thickness of the hole injection layer is 30nm-50nm; and / or

[0037] The thickness of the hole transport layer is 30nm-50nm; and / or

[0038] The thickness of the light-emitting layer is 50nm-70nm; and / or

[0039] The thickness of the electron transport layer is 40nm-60nm; and / or

[0040] The thickness of the cathode is 30nm-100nm.

[0041] In some embodiments, the light-emitting device further includes a hole injection layer, which is disposed between the hole transport layer and the light-emitting layer, and the material of the hole injection layer includes at least one of poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid and its derivatives, copper phthalocyanine, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polydioxyethylthiophene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, transition metal oxides and transition metal sulfur compounds.

[0042] In some embodiments, the materials of the anode and the cathode are independently selected from one or more of a metal, a second carbon material and a second metal oxide, the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca and Mg, the second carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fiber, and the second metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide.

[0043] In a third aspect, an embodiment of the present application provides a method for preparing a light-emitting device, comprising:

[0044] providing an anode;

[0045] forming a hole transport layer on the anode;

[0046] forming a light-emitting layer on the hole transport layer;

[0047] forming an electron transport layer on the light-emitting layer;

[0048] forming a cathode on the electron transport layer;

[0049] Wherein, forming a hole transport layer on the anode comprises: forming a hole compensation layer on the anode, forming a hole transport layer on the hole compensation layer, wherein the hole compensation layer is used for the current density of the light emitting device being less than or equal to 10 -5 mA / cm 2 replenishing holes in the hole transport layer in the case of

[0050] The forming of a cathode on the electron transport layer comprises: forming an electron compensation layer on the electron transport layer, and forming a cathode on the electron compensation layer, wherein the electron compensation layer is used for the current density of the light emitting device to be greater than or equal to 1 mA / cm 2 In the case of replenishing electrons in the electron transport layer.

[0051] In some embodiments, forming a hole transport layer on the hole compensation layer includes: forming a hole injection layer on the hole compensation layer, and forming a hole transport layer on the hole injection layer.

[0052] In a third aspect, an embodiment of the present application provides a method for preparing a light-emitting device, comprising:

[0053] providing an anode;

[0054] forming a hole transport layer on the anode;

[0055] forming a light-emitting layer on the hole transport layer;

[0056] forming an electron transport layer on the light-emitting layer;

[0057] forming a cathode on the electron transport layer;

[0058] Wherein, forming a hole transport layer on the anode comprises: forming a hole compensation layer on the anode, forming a hole transport layer on the hole compensation layer, and the material of the hole compensation layer comprises at least one of CoO, Ag2O, PbO, Hg2O, CuI, and Sb2S3; and / or

[0059] The forming of a cathode on the electron transport layer comprises: forming an electron compensation layer on the electron transport layer, and forming a cathode on the electron compensation layer, wherein the material of the electron compensation layer comprises at least one of SiP, SiAs, SbSi, GeTe, GeP, GeAs, V2O5, MoO3, and Ta2O5.

[0060] In a fourth aspect, an embodiment of the present application provides a method for preparing a light-emitting device, comprising:

[0061] providing a cathode;

[0062] forming an electron transport layer on the cathode;

[0063] forming a light-emitting layer on the electron transport layer;

[0064] forming a hole transport layer on the light-emitting layer;

[0065] forming an anode on the hole transport layer;

[0066] Wherein, forming a cathode on the electron transport layer comprises: forming an electron compensation layer on the cathode, and forming an electron transport layer on the electron compensation layer, wherein the electron compensation layer is used for the current density of the light emitting device to be greater than or equal to 1 mA / cm 2 replenishing electrons in the electron transport layer in the case of

[0067] The forming of the anode on the hole transport layer comprises: forming a hole compensation layer on the hole transport layer, and forming an anode on the hole compensation layer, wherein the hole compensation layer is used for generating a positive electrode when the current density of the light emitting device is less than or equal to 10 -5 mA / cm 2 In the case of replenishing holes in the hole transport layer.

[0068] In some embodiments, forming a hole compensation layer on the hole transport layer includes: forming a hole injection layer on the hole transport layer, and forming a hole compensation layer on the hole injection layer.

[0069] In a fifth aspect, an embodiment of the present application provides a method for preparing a light-emitting device, comprising:

[0070] providing a cathode;

[0071] forming an electron transport layer on the cathode;

[0072] forming a light-emitting layer on the electron transport layer;

[0073] forming a hole transport layer on the light-emitting layer;

[0074] forming an anode on the hole transport layer;

[0075] Wherein, forming a cathode on the electron transport layer comprises: forming an electron compensation layer on the cathode, forming an electron transport layer on the electron compensation layer, wherein the material of the electron compensation layer comprises at least one of SiP, SiAs, SbSi, GeTe, GeP, GeAs, V2O5, MoO3, and Ta2O5; and / or

[0076] The forming of the anode on the hole transport layer comprises: forming a hole compensation layer on the hole transport layer, and forming an anode on the hole compensation layer, wherein the material of the hole compensation layer comprises at least one of CoO, Ag2O, PbO, Hg2O, CuI, and Sb2S3.

[0077] In a sixth aspect, an embodiment of the present application provides a display device, comprising a light-emitting device, wherein the light-emitting device is the light-emitting device as described above or a light-emitting device manufactured by the method for manufacturing the light-emitting device as described above.

[0078] In the light-emitting device provided in the embodiments of the present application, the electron compensation layer can supplement electrons into the electron transport layer, so that the light-emitting device can achieve maximum carrier balance under high voltage conditions, and / or the hole compensation layer can supplement holes into the hole transport layer, so that the light-emitting device can achieve maximum carrier balance under low voltage conditions, thereby improving the performance consistency of the light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0079] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for describing the embodiments.

[0080] Figure 1 A schematic diagram of the first structure of the light-emitting device provided in an embodiment of the present application.

[0081] Figure 2 A second structural schematic diagram of the light-emitting device provided in an embodiment of the present application.

[0082] Figure 3A third structural schematic diagram of the light-emitting device provided in an embodiment of the present application.

[0083] Figure 4 A first flow chart of a method for preparing a light-emitting device provided in an embodiment of the present application.

[0084] Figure 5 A second flow chart of the method for preparing a light-emitting device provided in an embodiment of the present application.

[0085] Figure 6 JV curves of a first device including an electron compensation layer and a second device including a hole compensation layer provided in an embodiment of the present application.

[0086] Figure 7 Schematic diagram of the structure of the light-emitting device in comparative example 1. DETAILED DESCRIPTION

[0087] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of this application.

[0088] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0089] In the present application, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b or c", or "at least one of a, b and c" can all mean: a, b, c, a+b, a+c, b+c, or a+b+c, where a, b, c can be single or multiple, respectively.

[0090] In the present application, when another layer is formed "on" a certain layer, the so-called "on" is a broad concept, which may indicate that the formed another layer is adjacent to the certain layer, or may indicate that there are other spacing structural layers between the another layer and the certain layer. For example, when a second electrode is formed "on" the first carrier functional layer, the so-called "on" may indicate that the formed second electrode is adjacent to the first carrier functional layer, or may indicate that there are other spacing structural layers between the second electrode and the first carrier functional layer, such as a light-emitting layer.

[0091] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0092] Existing electroluminescent devices are usually composed of an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode. When stimulated by electricity or light, electrons and holes are injected from the cathode and anode respectively, and the two are combined in the light-emitting layer to emit light. However, the electrical performance of the light-emitting device under low voltage (below 1V), normal voltage (1V~4V) and high voltage (above 4V) conditions is completely inconsistent. This is because under low voltage conditions, the injection degree of electrons in the light-emitting layer is greater than that of holes, and under normal voltage conditions, the injection degree of electrons in the light-emitting layer is equivalent to the injection degree of holes, resulting in a large difference in the electrical performance of the light-emitting device under low voltage conditions and normal voltage conditions, thereby affecting the performance consistency of the light-emitting device; and under high voltage conditions, the injection degree of holes in the light-emitting layer is greater than that of electrons, ultimately resulting in a large difference in the electrical performance of the light-emitting device under high voltage conditions and normal voltage conditions, thereby affecting the performance consistency of the light-emitting device.

[0093] In response to the above technical problems, the present application proposes a solution: an electron compensation layer is added to the inner side of the cathode of the light-emitting device, and / or a hole compensation layer is added to the inner side of the anode of the light-emitting device. Since the electron compensation layer has a good electron supply capacity under high voltage conditions (for example, above 4V), and the hole compensation layer has a good hole supply capacity under low voltage conditions (for example, below 1V), the electron compensation layer in the light-emitting device can replenish electrons into the electron transport layer under high voltage conditions, so that the light-emitting device can achieve maximum carrier balance under high voltage conditions, and / or the hole compensation layer in the light-emitting device can replenish holes into the hole transport layer under low voltage conditions, so that the light-emitting device can achieve maximum carrier balance under low voltage conditions, thereby improving the performance consistency of the light-emitting device.

[0094] See also Figure 1 , Figure 2 and Figure 3 The embodiment of the present application provides a light-emitting device 100, comprising an anode 20, a hole transport layer 42, a light-emitting layer 50, an electron transport layer 60 and a cathode 80 which are stacked in sequence.

[0095] Please combine Figure 1 The light emitting device 100 may further include an electron compensation layer 70 , which is disposed between the cathode 80 and the electron transport layer 60 , and is used to supplement electrons into the electron transport layer 60 .

[0096] Please combine Figure 2 The light emitting device 100 may further include a hole compensation layer 30 , which is disposed between the anode 20 and the hole transport layer 42 , and is used to supplement holes into the hole transport layer 42 .

[0097] For example, the electron compensation layer 70 is used for the current density of the light emitting device 100 to be greater than or equal to 1 mA / cm 2 In the case of , electrons are replenished into the electron transport layer 70.

[0098] Exemplarily, the hole compensation layer 30 is used for the current density of the light emitting device 100 to be less than or equal to 10 -5 mA / cm 2 Under the condition of the present invention, holes are replenished in the hole transport layer 30.

[0099] It should be noted that when the current density is greater than or equal to 1 mA / cm 2 When , it means that the light-emitting device is under high voltage conditions (for example, above 4V). For traditional light-emitting devices, at this time, the degree of hole injection in the light-emitting layer is greater than that of electrons, and carrier balance cannot be achieved. The embodiment of the present application arranges an electron compensation layer 70 between the cathode 80 and the electron transport layer 60, and can use the electron compensation layer 70 to supplement electrons into the electron transport layer 60, thereby achieving carrier balance in the light-emitting layer 50.

[0100] It should be noted that when the current density is less than or equal to 10 -5 mA / cm 2 When , it means that the light-emitting device is under low voltage conditions (for example, below 1V). For traditional light-emitting devices, at this time, the degree of hole injection in the light-emitting layer is less than that of electrons, and carrier balance cannot be achieved. The embodiment of the present application arranges a hole compensation layer 30 between the anode 20 and the hole transport layer 42, and can use the hole compensation layer 30 to supplement holes in the hole transport layer 42, thereby achieving carrier balance in the light-emitting layer 50.

[0101] Please combine Figure 3 The light emitting device 100 may further include an electron compensation layer 70 and a hole compensation layer 30 at the same time.

[0102] Please combine Figure 1 and Figure 2The light emitting device 100 may further include a substrate, which may be disposed on a side of the anode 20 away from the light emitting layer 50, or on a side of the cathode 80 away from the light emitting layer 50. For example, the material of the substrate may be glass.

[0103] Exemplarily, the material of the hole compensation layer 30 includes at least one of P-type semiconductor materials such as cobalt oxide (CoO), silver oxide (Ag2O), lead oxide (PbO), mercurous oxide (Hg2O), cuprous iodide (CuI), and antimony trisulfide (Sb2S3).

[0104] Exemplarily, the thickness of the hole compensation layer 30 is 10 nm-50 nm, such as 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, etc.

[0105] Exemplarily, the electron compensation layer 70 is at least one of N-type semiconductor materials such as (SiP), silicon arsenic compound (SiAs), silicon antimony compound (SbSi), germanium telluride compound (GeTe), germanium phosphorus compound (GeP), germanium arsenic compound (GeAs), vanadium pentoxide (V2O5), molybdenum trioxide (MoO3), and tantalum pentoxide (Ta2O5).

[0106] Exemplarily, the thickness of the electron compensation layer 70 is 10 nm-50 nm, for example, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, etc.

[0107] Exemplarily, the material of the hole transport layer 42 includes 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD). 、N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tri(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-bis(1-naphthyl)-N,N '-Diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-di(4- At least one of poly(4-(4-methylphenyl)aniline) (TAPC), 1,3-di(carbazole-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid (PEDOT:PSS) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, polyspirofluorene and its derivatives, polythiophene (TPH) and its derivatives.

[0108] Exemplarily, the material of the electron transport layer 60 includes at least one of zinc oxide (ZnO), tin dioxide (SnO2), indium tin oxide (ITO), ferric oxide (Fe2O3), chromium oxide (CrO3), titanium dioxide (TiO2), tungsten trioxide (WO3), cadmium oxide (CdO), copper oxide (CuO), and molybdenum dioxide (MoO2).

[0109] Please combine Figure 1 The light emitting device 100 may further include a hole injection layer 41 , and the hole injection layer 41 is disposed between the hole transport layer 42 and the light emitting layer 50 .

[0110] Exemplarily, the material of the hole injection layer 41 includes at least one of poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid (PEDOT:PSS), copper phthalocyanine (CuPc), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), poly(ethylenedioxythiophene) (PEDOT), PEDOT:PSS, a derivative of PEDOT:PSS doped with MoO3 (PEDOT:PSS-MoO3), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinodimethane (F4-TCNQ), a transition metal oxide, and a transition metal sulfide compound. Exemplarily, the transition metal oxide may include MoO x , VO x , WO x CrO x , CuO. For example, the metal sulfide compound may include one or more of MoS2, MoSe2, WS2, WSe2, and CuS.

[0111] Exemplarily, the cathode 80 and the anode 20 can be independently selected from a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal element electrode or an alloy electrode. The material of the doped metal oxide electrode can include, but is not limited to, one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), aluminum-doped magnesium oxide (AMO), and cadmium-doped zinc oxide. The composite electrode is an electrode formed by stacking two or more layers of conductive materials, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc., wherein “ / ” represents a stacked structure, for example, AZO / Ag / AZO represents a composite electrode comprising sequentially stacked AZO layers, Ag layers and AZO layers. The material of the metal single substance electrode may include but is not limited to one or more of silver (Ag), magnesium (Mg), aluminum (Al), gold (Au), gallium (Ga), nickel (Ni), platinum (Pt), iridium (Ir), copper (Cu), molybdenum (Mo), calcium (Ca), and barium (Ba). The alloy electrode includes but is not limited to Au:Mg alloy electrode or Ag:Mg alloy electrode.

[0112] In some embodiments, the anode 20 is an electrode with a relatively high work function, for example, it may include but is not limited to a doped metal oxide electrode with a relatively high work function, a metal single substance electrode with a relatively high work function, and a carbon nanotube electrode. The metal single substance electrode with a relatively high work function may be selected from but is not limited to Ni, Pt, Au, Ag, Ir, etc.

[0113] In some embodiments, cathode 80 is an electrode with a relatively low work function, for example, it may include but is not limited to a metal single substance electrode with a relatively low work function, a composite electrode with a relatively low work function, and an alloy electrode with a relatively low work function. The metal single substance electrode with a relatively low work function may be Ca, Ba, Al, Mg, etc. The composite electrode with a relatively low work function may be Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc. The alloy electrode with a relatively low work function may be Au:Mg and Ag:Mg, etc.

[0114] Exemplarily, the material of the light emitting layer 50 may include at least one of an organic light emitting material and a quantum dot light emitting material.

[0115] Exemplarily, the organic light-emitting material may include, but is not limited to, 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III)) (CBP:Ir(mppy)3), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium (TCTX:Ir(mmpy)), diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delay) materials, polymers containing covalent bonds of BN, HLCT (hybridized localized charge transfer excited state) materials, Exciplex (exciplex) light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives. One or more of these.

[0116] Exemplarily, the quantum dot luminescent material includes at least one of a single structure quantum dot and a core-shell structure quantum dot. Specifically, the material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot can each include at least one of a II-VI group compound, a IV-VI group compound, a III-V group compound and a I-III-VI group compound. The II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, Z At least one of nSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound is selected from SnS, SnSe, SnTe, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, PbS, At least one of PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, and the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNS b, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, and the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2.

[0117] Illustratively, the thickness of the anode 20 may be 100 nm-120 nm, such as 100 nm, 103 nm, 105 nm, 108 nm, 110 nm, 112 nm, 115 nm, 118 nm, 120 nm, etc.

[0118] Illustratively, the thickness of the hole injection layer 41 may be 30 nm-50 nm, for example, 30 nm, 33 nm, 35 nm, 38 nm, 40 nm, 42 nm, 45 nm, 48 nm, 50 nm, etc.

[0119] Illustratively, the thickness of the hole transport layer 42 may be 30 nm-50 nm, for example, 30 nm, 33 nm, 35 nm, 38 nm, 40 nm, 42 nm, 45 nm, 48 nm, 50 nm, etc.

[0120] Illustratively, the thickness of the light emitting layer 50 may be 50 nm-70 nm, for example, 50 nm, 53 nm, 55 nm, 58 nm, 60 nm, 62 nm, 65 nm, 68 nm, 70 nm, etc.

[0121] Illustratively, the thickness of the electron transport layer 60 may be 40 nm-60 nm, for example, 40 nm, 43 nm, 45 nm, 48 nm, 50 nm, 52 nm, 55 nm, 58 nm, 60 nm, etc.

[0122] Exemplarily, the thickness of cathode 80 can be 30 nm-100 nm, for example, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, etc.

[0123] The light-emitting device 100 provided in the embodiment of the present application, by setting an electron compensation layer 70 between the cathode 20 and the electron transport layer 60, and / or, setting a hole compensation layer 30 between the anode 20 and the hole transport layer 42, because the electron compensation layer 70 has a good electron supply capacity, the hole compensation layer 30 has a good hole supply capacity, therefore, the electron compensation layer 70 in the light-emitting device 100 can supplement electrons into the electron transport layer, so that the light-emitting device 100 can achieve maximum carrier balance under high voltage conditions, and / or, the hole compensation layer 30 in the light-emitting device 100 can supplement holes into the hole transport layer, so that the light-emitting device 100 can achieve maximum carrier balance under low voltage conditions, thereby improving the consistency of the electrical performance of the light-emitting device 100.

[0124] See also Figure 4 , while combining Figures 1 to 3 The present application also provides a method for preparing a light-emitting device, which is used to prepare the light-emitting device 100 in any of the above embodiments. The preparation method includes:

[0125] S110 , providing an anode 20 .

[0126] S120 , forming a hole transport layer 42 on the anode 20 .

[0127] S130 , forming the light emitting layer 50 on the hole transport layer 42 .

[0128] S140 , forming an electron transport layer 60 on the light emitting layer 50 .

[0129] S150 , forming a cathode 80 on the electron transport layer 60 .

[0130] Please combine Figure 2 and Figure 3 “Forming a hole transport layer 42 on the anode 20 ” may specifically include: forming a hole compensation layer 30 on the anode 20 , and forming a hole transport layer 42 on the hole compensation layer 30 .

[0131] Please combine Figure 1 and Figure 3 “Forming a cathode 80 on the electron transport layer 60 ” may specifically include: forming an electron compensation layer 70 on the electron transport layer 60 , and forming a cathode 80 on the electron compensation layer 70 .

[0132] For example, after forming the cathode 80, an evaporation method may be used to form an encapsulation layer on the cathode 80. In some embodiments, the encapsulation layer may include organic material layers and inorganic material layers that are alternately stacked.

[0133] Please combine Figure 2 and Figure 3 “Forming a hole transport layer 42 on the hole compensation layer 30 ” may specifically include: forming a hole injection layer 41 on the hole compensation layer 30 , and forming a hole transport layer 42 on the hole injection layer 41 .

[0134] The materials for the substrate, anode 20, hole compensation layer 30, hole injection layer 41, hole transport layer 42, light emitting layer 50, electron transport layer 60, electron compensation layer 70 and cathode 80 have been described in detail above and will not be repeated here.

[0135] For example, the anode 20 and the cathode 80 may be formed by evaporation, and the hole compensation layer 30 , the hole injection layer 41 , the hole transport layer 42 , the light emitting layer 50 , the electron transport layer 60 and the electron compensation layer 70 may be formed by spin coating.

[0136] See also Figure 5 , while combining 1 to Figure 3 The present application also provides a method for preparing a light-emitting device, which is used to prepare the light-emitting device 100 in any of the above embodiments. The preparation method includes:

[0137] S210 , providing a cathode 80 .

[0138] S220 , forming an electron transport layer 60 on the cathode 80 .

[0139] S230 , forming the light emitting layer 50 on the electron transport layer 60 .

[0140] S240 , forming a hole transport layer 42 on the light emitting layer 50 .

[0141] S250 , forming the anode 20 on the hole transport layer 42 .

[0142] Please combine Figure 1 and Figure 3 “Forming the electron transport layer 60 on the cathode 80 ” may specifically include: forming the electron compensation layer 70 on the cathode 80 , and forming the electron transport layer 60 on the electron compensation layer 70 .

[0143] Please combine Figure 2 and Figure 3 “Forming the anode 20 on the hole transport layer 42 ” may specifically include: forming the hole compensation layer 30 on the hole transport layer 42 , and forming the anode 20 on the hole compensation layer 30 .

[0144] For example, after forming the anode 20, an evaporation method may be used to form an encapsulation layer on the anode 20. In some embodiments, the encapsulation layer may include organic material layers and inorganic material layers that are alternately stacked.

[0145] Please combine Figure 2 and Figure 3 “Forming the hole compensation layer 30 on the hole transport layer 42 ” may specifically include: forming the hole injection layer 41 on the hole transport layer 42 , and forming the hole compensation layer 30 on the hole injection layer 41 .

[0146] See also Figure 6 , Figure 6 The JV curves of the first device including the electron compensation layer and the second device including the hole compensation layer provided in the embodiment of the present application are shown in FIG. Figure 6 As shown, the first device ( Figure 6 named after "P-type semiconductor" in Chinese) and the second device ( Figure 6 The first device is composed of a cathode, a quantum dot layer, a hole compensation layer (PbO), and an anode stacked in sequence; the second device is composed of a cathode, an electron compensation layer (V2O5), a quantum dot layer, and an anode stacked in sequence. The FSD optical characteristic measurement equipment is used to perform performance tests on the first device and the second device, respectively, to obtain current density-voltage (JV) characteristic curves of the first device and the second device.

[0147] from Figure 6It can be seen that the first device including the hole compensation layer begins to generate current under low voltage conditions (voltage less than 1V), indicating that hole ionization begins to occur in the hole compensation layer. When the voltage is 1V, the current density of the first device reaches a peak value, indicating that the ionization degree of the holes in the hole compensation layer reaches a maximum value. Thereafter, as the voltage increases, the current density of the first device gradually decreases, indicating that the ionization degree of the holes in the hole compensation layer gradually decreases. When the voltage increases to 4V, the current density of the first device is 0.00005mA / cm 2 , is almost 0, indicating that the number of ionized holes in the hole compensation layer is almost 0 at this time; in summary, it can be seen from the JV curve of the first device that the hole compensation layer has a good hole supply capacity under low voltage conditions (0.2V-1V) and can promote the hole-electron balance under low voltage conditions.

[0148] from Figure 6 It can be seen that the current density of the second device including the electron compensation layer is almost 0 under low voltage conditions (voltage less than 3V), indicating that the low voltage cannot drive the electron compensation layer to ionize electrons. When the voltage rises to about 4V, current begins to be generated in the second device, indicating that electron ionization begins to appear in the electron compensation layer at this time. When the voltage is 6V, the current density of the second device reaches a peak value, indicating that the degree of ionization of electrons in the electron compensation layer reaches a maximum value at this time. Thereafter, as the voltage increases, the current density of the second device gradually decreases, indicating that the degree of ionization of electrons in the electron compensation layer gradually decreases. When the voltage exceeds 8V, the current density of the second device is almost 0, indicating that the number of ionized electrons in the electron compensation layer is almost 0 at this time. In summary, it can be seen from the JV curve of the second device that the electron compensation layer has a good electron supply capacity under high voltage conditions (4V-8V), and can promote hole-electron balance under high voltage conditions.

[0149] An embodiment of the present application provides a display device, including a light-emitting device, wherein the light-emitting device is the light-emitting device as described above or a light-emitting device manufactured by the method for manufacturing the light-emitting device as described above.

[0150] Exemplarily, the display device can be a terminal such as a mobile phone, a tablet computer, a computer monitor, a television, an advertising display screen, etc., and can also be a gaming device, an augmented reality (AR) device, a virtual reality (VR) device, a data storage device, an audio playback device, a video playback device, a wearable device, and other devices with a display screen, where the wearable device can be a smart bracelet, smart glasses, a smart watch, smart decoration, etc.

[0151] The light-emitting device provided in the present application is described in detail below in the form of specific embodiments.

[0152] Example 1

[0153] like Figure 3 As shown, a light-emitting device 100 is composed of a cathode 80, an electron compensation layer 70, an electron transport layer 60, a light-emitting layer 50, a hole transport layer 42, a hole injection layer 41, a hole compensation layer 30 and an anode 20 which are stacked in sequence, wherein the material of the cathode 80 is Ag, the anode 20 is ITO / Ag / ITO, the material of the light-emitting layer 50 is core-shell structure quantum dots, the core material of the core-shell structure quantum dots is InP, the shell material of the core-shell structure quantum dots is CdS, the material of the electron transport layer 60 is ZnO, the material of the electron compensation layer 70 is SiP, the material of the hole transport layer 42 is TFB, the material of the hole injection layer 41 is PEDOT:PSS, and the material of the hole compensation layer 30 is CoO.

[0154] Example 2

[0155] like Figure 1 As shown, a light-emitting device 100 is composed of a cathode 80, an electron compensation layer 70, an electron transport layer 60, a light-emitting layer 50, a hole transport layer 42, a hole injection layer 41 and an anode 20 which are stacked in sequence, wherein the material of the cathode 80 is Ag, the anode 20 is ITO / Ag / ITO, the material of the light-emitting layer 50 is core-shell structure quantum dots, the core material of the core-shell structure quantum dots is InP, the shell material of the core-shell structure quantum dots is CdS, the material of the electron transport layer 60 is ZnO, the material of the electron compensation layer 70 is SiP, the material of the hole transport layer 42 is TFB, and the material of the hole injection layer 41 is PEDOT:PSS.

[0156] It can be seen that the difference between Example 2 and Example 1 is that the light emitting device 100 of Example 2 does not include the hole compensation layer 30 .

[0157] Example 3

[0158] like Figure 2 As shown, a light-emitting device 100 is composed of a cathode 80, an electron transport layer 60, a light-emitting layer 50, a hole transport layer 42, a hole injection layer 41, a hole compensation layer 30 and an anode 20 which are stacked in sequence, wherein the material of the cathode 80 is Ag, the anode 20 is ITO / Ag / ITO, the material of the light-emitting layer 50 is core-shell structure quantum dots, the core material of the core-shell structure quantum dots is InP, the shell material of the core-shell structure quantum dots is CdS, the material of the electron transport layer 60 is ZnO, the material of the hole transport layer 42 is TFB, the material of the hole injection layer 41 is PEDOT:PSS, and the material of the hole compensation layer 30 is CoO.

[0159] It can be seen that the difference between Example 3 and Example 1 is that the light emitting device 100 of Example 3 does not include the electron compensation layer 70 .

[0160] Example 4

[0161] like Figure 3 As shown, a light-emitting device 100 is composed of a cathode 80, an electron compensation layer 70, an electron transport layer 60, a light-emitting layer 50, a hole transport layer 42, a hole injection layer 41, a hole compensation layer 30 and an anode 20 which are stacked in sequence. The difference between the embodiment 1 and the embodiment 1 is that the material of the electron compensation layer 70 is SiAs, and the material of the hole compensation layer 30 is Ag2O.

[0162] Example 5

[0163] like Figure 3 As shown, a light-emitting device 100 is composed of a cathode 80, an electron compensation layer 70, an electron transport layer 60, a light-emitting layer 50, a hole transport layer 42, a hole injection layer 41, a hole compensation layer 30 and an anode 20 which are stacked in sequence. The difference between the embodiment 1 and the embodiment 1 is that the material of the electron compensation layer 70 is SbSi, and the material of the hole compensation layer 30 is PbO.

[0164] Example 6

[0165] like Figure 3 As shown, a light-emitting device 100 is composed of a cathode 80, an electron compensation layer 70, an electron transport layer 60, a light-emitting layer 50, a hole transport layer 42, a hole injection layer 41, a hole compensation layer 30 and an anode 20 which are stacked in sequence. The difference between the embodiment 1 and the embodiment 1 is that the material of the electron compensation layer 70 is GeTe, and the material of the hole compensation layer 30 is Hg2O.

[0166] Example 7

[0167] like Figure 3 As shown, a light-emitting device 100 is composed of a cathode 80, an electron compensation layer 70, an electron transport layer 60, a light-emitting layer 50, a hole transport layer 42, a hole injection layer 41, a hole compensation layer 30 and an anode 20 which are stacked in sequence. The difference between the embodiment 1 and the embodiment 1 is that the material of the electron compensation layer 70 is V2O5, and the material of the hole compensation layer 30 is CuI.

[0168] Example 8

[0169] like Figure 3 As shown, a light-emitting device 100 is composed of a cathode 80, an electron compensation layer 70, an electron transport layer 60, a light-emitting layer 50, a hole transport layer 42, a hole injection layer 41, a hole compensation layer 30 and an anode 20 which are stacked in sequence. The difference between the embodiment 1 and the embodiment 1 is that the material of the electron compensation layer 70 is Ta2O5, and the material of the hole compensation layer 30 is Sb2S3.

[0170] Comparative Example 1

[0171] like Figure 7 As shown, a light-emitting device 100' is composed of a cathode 80, an electron transport layer 60, a light-emitting layer 50, a hole transport layer 42, a hole injection layer 41 and an anode 20 which are stacked in sequence, wherein the material of the cathode 80 is Ag, the anode 20 is ITO / Ag / ITO, the material of the light-emitting layer 50 is core-shell structure quantum dots, the core material of the core-shell structure quantum dots is InP, the shell material of the core-shell structure quantum dots is CdS, the material of the electron transport layer 60 is ZnO, the material of the hole transport layer 42 is TFB, and the material of the hole injection layer 41 is PEDOT:PSS.

[0172] It can be seen that the difference between Comparative Example 1 and Example 1 is that the light emitting device 100 ′ of Comparative Example 1 does not include the electron compensation layer 70 and the hole compensation layer 30 .

[0173] Performance Testing

[0174] The luminous efficiency (CE) of the light-emitting devices 100 in Examples 1-8 and the light-emitting device 100' in Comparative Example 1 was tested under low voltage conditions (1 V) and high voltage conditions (6 V), and the service life (T95 and Lt95@1 knit) of the light-emitting devices 100 in Examples 1-8 and the light-emitting device 100' in Comparative Example 1 was tested, and the results are shown in the following table.

[0175]

[0176]

[0177] Based on the experimental data in the above table, by comparing Examples 1, 4-8 and Comparative Example 1, it can be seen that, whether under high voltage conditions or low voltage conditions, the light-emitting devices 100 in Examples 1 and 4-8 have higher luminous efficiency (CE) and longer service life (T95 and Lt95@1knit) than the light-emitting device 100' in Comparative Example 1. Since the materials of the electron compensation layer 70 and the hole compensation layer 30 of the light-emitting devices 100 in Examples 1 and 4-8 are different, the luminous efficiency and service life of the light-emitting devices 100 in Examples 1 and 4-8 are also different to a certain extent;

[0178] By comparing Example 2 with Comparative Example 1, it can be seen that the light-emitting device 100 including the electron compensation layer 70 in Example 2 has higher luminous efficiency (CE) and longer service life (T95 and Lt95@1knit) under high voltage conditions than the light-emitting device 100' in Comparative Example 1, indicating that the electron compensation layer 70 in Example 2 can supplement electrons to the electron transport layer 60 under high voltage conditions, so that the light-emitting device achieves carrier balance under high voltage conditions;

[0179] By comparing Example 3 with Comparative Example 1, it can be seen that the light-emitting device 100 including the hole compensation layer 30 in Example 3 has higher luminous efficiency (CE) and longer service life (T95 and Lt95@1knit) under low voltage conditions than the light-emitting device 100' in Comparative Example 1, indicating that the hole compensation layer 30 in Example 3 can supplement electrons into the hole transport layer 42 under low voltage conditions, so that the light-emitting device 100 can achieve carrier balance under low voltage conditions;

[0180] By comparing Example 1, Example 2 and Example 3, it can be seen that since the light-emitting device 100 of Example 1 includes both the hole compensation layer 30 and the electron compensation layer 70, while the light-emitting device 100 of Example 2 only includes the electron compensation layer 70, and the light-emitting device 100 of Example 3 only includes the hole compensation layer 30, the light-emitting device 100 of Example 1 has a higher luminous efficiency (CE) under both high voltage conditions and low voltage conditions, while the light-emitting device 100 of Example 2 has a higher luminous efficiency (CE) only under low voltage conditions, and the light-emitting device 100 of Example 3 has a higher luminous efficiency (CE) only under high voltage conditions, and, compared with the light-emitting devices 100 in Examples 2 and 3, the light-emitting device 100 in Example 1 has a longer service life (T95 and Lt95@1knit);

[0181] By comparing Example 1 with Examples 4-8, it can be seen that compared with Examples 4-8, the light-emitting device 100 of Example 1 has higher luminous efficiency (CE) under both high voltage conditions and low voltage conditions, and the luminous efficiency under high voltage conditions and low voltage conditions is consistent, indicating that the light-emitting device 100 has good performance consistency under high voltage conditions and low voltage conditions. In addition, compared with Examples 4-8, the light-emitting device 100 of Example 1 has a longer service life (T95 and Lt95@1knit); that is, when the material of the electron compensation layer 70 is SiP and the material of the hole compensation layer 30 is CoO, the light-emitting device 100 has better performance consistency, has higher luminous efficiency under both high voltage conditions and low voltage conditions, and has a longer service life.

[0182] The above is a detailed introduction to the light-emitting device and its preparation method and display device provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the present application. At the same time, for those skilled in the art, according to the idea of ​​the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present application.

Claims

1. A light emitting device, characterized in that: It includes an anode, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode which are stacked in sequence; The light-emitting device also includes an electron compensation layer and / or a hole compensation layer. The electron compensation layer is arranged between the cathode and the electron transport layer, and the electron compensation layer is used to supplement electrons into the electron transport layer; the hole compensation layer is arranged between the anode and the hole transport layer, and the hole compensation layer is used to supplement holes into the hole transport layer.

2. The light emitting device according to claim 1, characterized in that: The electron compensation layer is used for the current density of the light emitting device to be greater than or equal to 1 mA / cm 2 replenishing electrons in the electron transport layer in the case of The hole compensation layer is used for the current density of the light emitting device to be less than or equal to 10 -5 mA / cm 2 Under the condition of replenishing holes in the hole transport layer.

3. The light emitting device according to claim 1, characterized in that: The materials of the hole transport layer include 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N, N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'- diphenyl-1,1'-biphenyl-4-4'-diamine, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 1 , 3-di(carbazole-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, polyspirofluorene and its derivatives, polythiophene and its derivatives; and / or The material of the electron transport layer includes at least one of ZnO, SnO2, ITO, Fe2O3, CrO3, TiO2, WO3, CdO, CuO, and MoO2; and / or The material of the light-emitting layer comprises one or more of an organic light-emitting material and a quantum dot; wherein the organic light-emitting material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials and exciplex light-emitting materials; the quantum dots are selected from one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots; The material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot, and the material of the shell of the core-shell structure quantum dot are independently selected from at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound, or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeT e, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InA s, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAl NAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPS b, the IV-VI group compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, the I-III-VI group compound is selected from one or more of CuInS, CuInSe and AgInS; the general structural formula of the inorganic perovskite quantum dot is AMX3, wherein A is Cs + ion, M is a divalent metal cation, M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2 + , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; the general structural formula of the organic perovskite quantum dot is CMX3, C is a carboxamidine group; the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX3, and B is selected from an organic amine cation.

4. The light emitting device according to claim 1, characterized in that: The thickness of the hole compensation layer is 10nm-50nm; and / or The thickness of the electron compensation layer is 10nm-50nm; and / or The thickness of the anode is 100nm-120nm; and / or The thickness of the hole injection layer is 30nm-50nm; and / or The thickness of the hole transport layer is 30nm-50nm; and / or The thickness of the light-emitting layer is 50nm-70nm; and / or The thickness of the electron transport layer is 40nm-60nm; and / or The thickness of the cathode is 30nm-100nm.

5. The light emitting device according to claim 1, characterized in that: The light-emitting device also includes a hole injection layer, which is arranged between the hole transport layer and the light-emitting layer. The material of the hole injection layer includes at least one of poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid and its derivatives, copper phthalocyanine, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, poly(dioxyethylthiophene), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, transition metal oxides and transition metal sulfur compounds.

6. The light emitting device according to any one of claims 1 to 5, characterized in that: The materials of the anode and the cathode are independently selected from one or more of a metal, a second carbon material and a second metal oxide, the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca and Mg, the second carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fibers, and the second metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide.

7. A light emitting device, characterized in that: It includes an anode, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode which are stacked in sequence; The light emitting device further comprises an electron compensation layer and / or a hole compensation layer; The electron compensation layer is provided between the cathode and the electron transport layer, and the material of the electron compensation layer includes at least one of SiP, SiAs, SbSi, GeTe, GeP, GeAs, V2O5, MoO3, and Ta2O5; The hole compensation layer is disposed between the anode and the hole transport layer, and a material of the hole compensation layer includes at least one of CoO, Ag2O, PbO, Hg2O, CuI, and Sb2S3.

8. The light emitting device according to claim 7, characterized in that: The materials of the hole transport layer include 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N, N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'- diphenyl-1,1'-biphenyl-4-4'-diamine, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 1 , 3-di(carbazole-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, polyspirofluorene and its derivatives, polythiophene and its derivatives; and / or The material of the electron transport layer includes at least one of ZnO, SnO2, ITO, Fe2O3, CrO3, TiO2, WO3, CdO, CuO, and MoO2; and / or The material of the light-emitting layer comprises one or more of an organic light-emitting material and a quantum dot; wherein the organic light-emitting material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials and exciplex light-emitting materials; the quantum dots are selected from one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots; The material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot, and the material of the shell of the core-shell structure quantum dot are independently selected from at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound, or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeT e, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InA s, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAl NAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPS b, the IV-VI group compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, the I-III-VI group compound is selected from one or more of CuInS, CuInSe and AgInS; the general structural formula of the inorganic perovskite quantum dot is AMX3, wherein A is Cs + ion, M is a divalent metal cation, M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2 + , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; the general structural formula of the organic perovskite quantum dot is CMX3, C is a carboxamidine group; the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX3, and B is selected from an organic amine cation.

9. The light emitting device according to claim 7, characterized in that: The thickness of the hole compensation layer is 10nm-50nm; and / or The thickness of the electron compensation layer is 10nm-50nm; and / or The thickness of the anode is 100nm-120nm; and / or The thickness of the hole injection layer is 30nm-50nm; and / or The thickness of the hole transport layer is 30nm-50nm; and / or The thickness of the light-emitting layer is 50nm-70nm; and / or The thickness of the electron transport layer is 40nm-60nm; and / or The thickness of the cathode is 30nm-100nm.

10. The light emitting device according to claim 7, characterized in that: The light-emitting device also includes a hole injection layer, which is arranged between the hole transport layer and the light-emitting layer. The material of the hole injection layer includes at least one of poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid and its derivatives, copper phthalocyanine, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, poly(dioxyethylthiophene), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, transition metal oxides and transition metal sulfur compounds.

11. The light emitting device according to any one of claims 7 to 10, characterized in that: The materials of the anode and the cathode are independently selected from one or more of a metal, a second carbon material and a second metal oxide, the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca and Mg, the second carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fibers, and the second metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide.

12. A method for preparing a light emitting device, characterized in that: include: providing an anode; forming a hole transport layer on the anode; forming a light-emitting layer on the hole transport layer; forming an electron transport layer on the light-emitting layer; forming a cathode on the electron transport layer; Wherein, forming a hole transport layer on the anode comprises: forming a hole compensation layer on the anode, forming a hole transport layer on the hole compensation layer, wherein the hole compensation layer is used for the current density of the light emitting device being less than or equal to 10 -5 mA / cm 2 replenishing holes in the hole transport layer in the case of The forming of a cathode on the electron transport layer comprises: forming an electron compensation layer on the electron transport layer, and forming a cathode on the electron compensation layer, wherein the electron compensation layer is used for the current density of the light emitting device to be greater than or equal to 1 mA / cm 2 In the case of replenishing electrons in the electron transport layer.

13. The method for preparing a light emitting device according to claim 12, characterized in that: The forming of a hole transport layer on the hole compensation layer includes: forming a hole injection layer on the hole compensation layer, and forming a hole transport layer on the hole injection layer.

14. A method for preparing a light emitting device, characterized in that: include: providing an anode; forming a hole transport layer on the anode; forming a light-emitting layer on the hole transport layer; forming an electron transport layer on the light-emitting layer; forming a cathode on the electron transport layer; Wherein, forming a hole transport layer on the anode comprises: forming a hole compensation layer on the anode, forming a hole transport layer on the hole compensation layer, and the material of the hole compensation layer comprises at least one of CoO, Ag2O, PbO, Hg2O, CuI, and Sb2S3; and / or The forming of a cathode on the electron transport layer comprises: forming an electron compensation layer on the electron transport layer, and forming a cathode on the electron compensation layer, wherein the material of the electron compensation layer comprises at least one of SiP, SiAs, SbSi, GeTe, GeP, GeAs, V2O5, MoO3, and Ta2O5.

15. A method for preparing a light emitting device, characterized in that: include: providing a cathode; forming an electron transport layer on the cathode; forming a light-emitting layer on the electron transport layer; forming a hole transport layer on the light-emitting layer; forming an anode on the hole transport layer; Wherein, forming a cathode on the electron transport layer comprises: forming an electron compensation layer on the cathode, and forming an electron transport layer on the electron compensation layer, wherein the electron compensation layer is used for the current density of the light emitting device to be greater than or equal to 1 mA / cm 2 replenishing electrons in the electron transport layer in the case of The forming of the anode on the hole transport layer comprises: forming a hole compensation layer on the hole transport layer, and forming an anode on the hole compensation layer, wherein the hole compensation layer is used for generating a positive electrode when the current density of the light emitting device is less than or equal to 10 -5 mA / cm 2 In the case of replenishing holes in the hole transport layer.

16. The method for preparing a light emitting device according to claim 15, characterized in that: The forming of the hole compensation layer on the hole transport layer includes: forming a hole injection layer on the hole transport layer, and forming a hole compensation layer on the hole injection layer.

17. A method for preparing a light emitting device, characterized in that: include: providing a cathode; forming an electron transport layer on the cathode; forming a light-emitting layer on the electron transport layer; forming a hole transport layer on the light-emitting layer; forming an anode on the hole transport layer; Wherein, forming a cathode on the electron transport layer comprises: forming an electron compensation layer on the cathode, forming an electron transport layer on the electron compensation layer, wherein the material of the electron compensation layer comprises at least one of SiP, SiAs, SbSi, GeTe, GeP, GeAs, V2O5, MoO3, and Ta2O5; and / or The forming of the anode on the hole transport layer comprises: forming a hole compensation layer on the hole transport layer, and forming an anode on the hole compensation layer, wherein the material of the hole compensation layer comprises at least one of CoO, Ag2O, PbO, Hg2O, CuI, and Sb2S3.

18. A display device, characterized in that: The invention comprises a light-emitting device, wherein the light-emitting device is a light-emitting device according to any one of claims 1 to 11 or a light-emitting device manufactured by the method for manufacturing a light-emitting device according to any one of claims 12 to 17.

Images