Method for monitoring and controlling operation state of sapphire annealing furnace

Abstract

The invention relates to the technical field of on-line monitoring and control, in particular to a sapphire annealing furnace operation state monitoring and controlling method, which specifically comprises the following steps: performing feature matching processing on power supply ripple data to obtain a clock offset compensation value, and performing timestamp synchronization on the power supply ripple data and temperature controller data through the clock offset compensation value; calculating to obtain residual clock offset of the distributed temperature controller, establishing a first-round monitoring model, and performing first-round evaluation on the operation state of the annealing furnace; carrying out reconstruction treatment on the sapphire substrate contact stress field, and carrying out secondary evaluation on the operation state of the annealing furnace; and dynamically adjusting control parameters of the annealing furnace according to the first-round evaluation result and the second-round evaluation result. The problems of power supply fluctuation, clock drift and thermal stress monitoring failure caused by aging of the annealing furnace in the prior art are solved.

Description

Technical Field

[0001] The invention relates to the technical field of online monitoring and control, and is a method for monitoring and controlling the operating state of a sapphire annealing furnace. Background Art

[0002] During the annealing process of sapphire, as the annealing furnace operates at high frequency for a long time, the core components inside the annealing furnace will degrade due to material fatigue and component performance degradation: the nonlinear characteristics of the rectifier, filter and switching devices inside the power system will increase with the service time, and the capacitance attenuation superimposed on the external electromagnetic interference coupling will cause the output current and voltage smoothing ability to decrease, causing the power supply stability to deteriorate. Its unstable output interferes with the lattice stress distribution through the electric field distortion of the electrode contact interface, causing the dislocation density of the sapphire lattice to rise uncontrollably during the annealing process; at the same time, for the sapphire annealing process with extremely high temperature accuracy requirements, the quartz oscillator of the distributed temperature controller in the annealing furnace will produce lattice defects due to high-temperature thermal stress, and long-term aging will cause the clock signal phase noise to increase. The traditional clock compensation algorithm does not integrate the dynamic change parameters of the thermal field gradient, and cannot correct the sub-second clock offset, causing the timing mismatch error of the power supply and temperature control data to spread exponentially with aging, which will cause the mapping relationship between the annealing process parameters and the lattice defect state to fail. The existing technology lacks a dynamic compensation mechanism for aging effects, which causes the accuracy of the monitoring system to continue to deteriorate as the service cycle increases. It is not only unable to achieve the coordinated optimization of lattice stress field reconstruction and temperature control decisions, but also leads to delayed warning of abnormal conditions such as poor electrode contact and furnace deformation, which seriously restricts the consistency of sapphire crystal annealing quality and the service life of the equipment. Summary of the invention

[0003] The technical problem to be solved by the present invention is to solve the problems of power supply fluctuation, clock drift and thermal stress monitoring failure caused by aging of the annealing furnace in the prior art, and a sapphire annealing furnace operation status monitoring and control method is proposed.

[0004] In order to achieve the above object, the technical solution of the sapphire annealing furnace operation status monitoring and control method of the present invention comprises the following steps: S1: Collect the power ripple data of the annealing furnace and perform feature matching processing on the power ripple data; S2: Determine the clock compensation strategy of the distributed temperature controller according to the feature matching result, obtain the clock offset compensation value according to the clock compensation strategy, and synchronize the power ripple data with the temperature controller data through the clock offset compensation value; S3: After the timestamp synchronization is completed, the harmonic phase deviation of the annealing furnace power supply ripple data is re-extracted and the residual clock offset of the distributed temperature controller is calculated and obtained, the first round of monitoring model is established, and the first round of evaluation of the operating status of the annealing furnace is performed; S4: reconstructing the substrate contact stress field of sapphire, establishing a secondary monitoring model, and inputting the substrate contact stress of sapphire into the secondary monitoring model to perform a secondary evaluation on the operating status of the annealing furnace; S5: Dynamically adjust the operating status of the annealing furnace according to the results of the first round of evaluation and the second round of evaluation.

[0005] Specifically, S1 includes the following specific steps: S11: preset the monitoring frequency range and embed an aluminum nitride insulating layer surface acoustic wave filter at the power input end; Preferably, the aluminum nitride insulating layer surface acoustic wave filter can effectively suppress the high-frequency electromagnetic noise generated by the heating rod in the annealing furnace and improve the accuracy of the power ripple data; S12: starting the annealing furnace and making it enter a normal working state, and obtaining a ripple current signal of the running annealing furnace within a monitoring frequency range through a temperature-resistant current probe; S13: converting the collected ripple current signal into ripple spectrum data, removing noise in the ripple spectrum data through a filtering algorithm, and normalizing the ripple spectrum data after noise processing; S14: Divide the ripple spectrum data into a plurality of unit ripple spectrums, capture dynamic feature points in each unit ripple spectrum, and import the dynamic feature points into a waveform similarity index calculation strategy, and perform feature matching processing on the power supply ripple data according to the waveform similarity index; The dynamic feature points include: the maximum slope value of the rising edge of the current unit ripple spectrum, the ripple peak voltage of the current unit ripple spectrum, and the time value of the curvature inflection point of the current unit ripple spectrum; Preferably, the waveform similarity index calculation strategy is: ; Among them, DW is the waveform similarity index; They are respectively the maximum slope value of the rising edge of the current unit ripple spectrum, the ripple peak voltage of the current unit ripple spectrum, and the time value of the curvature inflection point of the current unit ripple spectrum; It is the average level of the maximum slope value of the rising edge of all unit ripple spectrums during the last historical operation of the annealing furnace; is the standard deviation of the maximum slope value of the rising edge of all unit ripple spectra during the last historical operation of the annealing furnace; It is the average level of the ripple peak voltage of all unit ripple spectra during the last historical operation of the annealing furnace; is the standard deviation of the ripple peak voltage of all unit ripple spectra during the last historical operation of the annealing furnace; It is the average value of the time value at the curvature inflection point of all unit ripple spectra during the last historical operation of the annealing furnace; is the standard deviation of the time values ​​at all the curvature inflection points during the last historical operation of the annealing furnace; They are slope weight, amplitude weight and time weight respectively; S15: Preset similarity deviation baseline value , and dynamically update similar deviations from the baseline value through exponential smoothing , when the waveform similarity index of the unit ripple spectrum is greater than the similarity deviation baseline value When , the current unit ripple spectrum is marked as abnormal ripple characteristics.

[0006] Specifically, the clock compensation strategy includes: extracting each unit ripple spectrum feature matching result, and executing the first clock compensation strategy when no ripple feature abnormality mark is detected or the unit ripple spectrum of the ripple abnormality mark is discontinuous; When two consecutive unit ripple spectra are monitored to be marked as abnormal ripple characteristics, the second clock compensation strategy is executed.

[0007] Specifically, the first clock compensation strategy is: A1: Set up the infrared temperature measurement matrix, read the 32-point infrared temperature measurement data of the annealing furnace, and calculate the radial temperature gradient based on the 32-point infrared temperature measurement data. ; A2: Identify the maximum temperature gradient area of ​​the annealing furnace through the temperature gradient identification strategy ; Preferably, the temperature gradient identification strategy is specifically: , where r is the radial coordinate, ; A3: Read the temperature field gradient of the annealing furnace every 2ms and extract the maximum temperature gradient area , calculating the first offset compensation value of each distributed thermostat clock; Preferably, the calculation strategy of the first offset compensation value is: ,in, is the first offset compensation value, k is the first proportional coefficient, , are the actual growth rate and nominal growth rate of sapphire crystal respectively; It should be noted that thermal stress causes a distortion effect on the sapphire lattice, which results in a frequency shift of the crystal resonator and ultimately causes a cumulative clock error; Every 1°C temperature gradient causes the sapphire lattice vibration frequency to shift by 0.02ppm; The sapphire lattice vibration frequency shift is linearly related to the clock error. Considering the influence of the growth rate on the thermal stress accumulation, the Correction Items; A4: Perform timestamp correction processing 500 times per second according to the first offset compensation value, specifically: ; in, are the clock timestamps before and after correction by the first offset compensation value, respectively; is a symbolic function.

[0008] It should be noted that the symbol function It reflects the influence of thermal gradient direction on clock drift. The clock speeds up in the temperature rising area and slows down in the temperature falling area. Specifically, the second clock compensation strategy is: B1: Register all distributed thermostats in the system, assign a unique device identifier to each device, and set the Lamport logic clock of each device Initialized to 0, where i represents the device identifier of the device; B2: Periodically collect the temperature data TE of each thermostat and calculate the temperature change rate derivative of each thermostat ; B3: Embed the Lamport logical clock value of the current device in each communication message , temperature change rate derivative and device identifiers; B4: The thermostat device sends the generated message to other related devices at the preset time interval. At the same time, each device receives the message from other devices and records the receiving time; B5: When the device with device identifier i receives a message sent by the device with device identifier j, it performs Lamport logical clock update processing, specifically: ,in, The updated logical clock value of the device with device identifier i; It is the Lamport logical clock value of the device with device identifier j carried in the message; B6: After each device receives messages sent by all devices except itself, it performs consistency verification on the temperature change rate derivatives of all received messages, specifically including: calculating the average value of the temperature change rate derivatives of all received messages , according to the average Calculate the temperature change rate derivative and average value of each received message Deviation value of B7: Obtain the second proportionality coefficient h by evaluating the deviation values ​​of multiple devices through the least squares method, and calculate the second offset compensation value according to the second proportionality coefficient ,in, is a second offset compensation value of the device with device identifier i; Preferably, the second offset compensation value The calculation strategy is: ; B8: Calculate the second offset compensation value for each device root , and dynamically update the timestamp of the temperature data of each device, specifically: ,in, They are respectively the timestamps before and after dynamic updating according to the second offset compensation value.

[0009] Specifically, S3 includes the following specific steps: S31: After the timestamp synchronization is completed, re-extract the harmonic phase deviation mean value of the power ripple data marked as abnormal ripple characteristics in the annealing furnace , harmonic frequency mean and harmonic current ; S32: Calculate and obtain the residual clock offset of the distributed temperature controller , establish the first round of monitoring model and conduct the first round of evaluation on the operating status of the annealing furnace; Preferably, the residual clock offset It is calculated by the temperature dependence of the phonon group velocity, specifically: ; It is the residual clock offset. It should be noted that there is a residual error in the clock synchronization between distributed temperature controllers, that is, the small time offset that still exists after being processed by the clock compensation algorithm; is the heater length; It is the function of phonon group velocity with respect to temperature, describing the speed of collective motion of phonons in the crystal, and is closely related to the lattice vibration and heat conduction of sapphire crystal; is the rate of change of phonon group velocity with temperature; is the temperature change, which reflects the temperature change in the system. The temperature change will cause the phonon group velocity to change, thus causing the clock offset. It should be noted that As an independent parameter, it reflects the health status of the time synchronization system. Its abnormal growth will be earlier than the HIT threshold, which can play an early warning role in the first round of evaluation. In the multi-parameter monitoring system, It provides direct evidence of anomalies in the time dimension, while HIT reflects the combined effects of multi-physics coupling.

[0010] The first round monitoring model includes: a stress impact assessment layer, an impact resistance assessment layer and a first round control protocol triggering layer; The harmonic phase offset mean and residual clock offset are imported into the stress impact assessment layer, and the assessment results are output, specifically: ; represents the carrier mobility associated with the crystal monitoring direction, preferably, the crystal monitoring direction is the

[0001] direction, Describes the ability of carriers to migrate in this direction under the action of an electric field; is the thermal strain rate; is the conversion factor; It should be noted that the stress impact assessment layer is used to assess the thermal diffusion effect caused by the stress change rate; The edge temperature and center temperature of the sapphire crystal are obtained and imported into the impact resistance evaluation layer. The output evaluation results are as follows: ; is the failure critical coefficient; is the thermal resistance coefficient of sapphire crystal; is the thermal conductivity of sapphire crystal in the vertical direction; They are the sapphire crystal edge temperature and the sapphire crystal center temperature respectively; The difference between represents the temperature gradient between the edge and the center of the crystal. It should be noted that the temperature gradient reflects the uneven temperature distribution in the crystal growth environment. The triggering strategy of the first round control protocol triggering layer is specifically as follows: when the output result of the stress impact assessment layer is greater than the output result of the impact resistance assessment layer, the operation state of the output annealing furnace is abnormal, triggering the red emergency rescue protocol of the sapphire lattice; Preferably, the red emergency rescue protocol of Sapphire Lattice includes: immediately shutting down and initiating emergency inspection.

[0011] When the output result of the stress impact assessment layer is less than or equal to the output result of the impact resistance assessment layer, the next round of monitoring model is entered.

[0012] Specifically, in S4, the reconstruction of the substrate contact stress field of the sapphire is specifically as follows: ; is the substrate contact stress; is the piezoelectric constant; are the vacuum dielectric constant and the sapphire relative dielectric constant respectively; A is the electrode area.

[0013] Specifically, in S4, the secondary round monitoring model includes: Calculate the annealing health index HIT of sapphire and set the first level annealing health threshold and the second level annealing health threshold ,in, ; The annealing health index of Sapphire is compared with the first-level annealing health threshold When the annealing health index of sapphire is greater than or equal to the first level annealing health threshold, When the orange rescue protocol is triggered; Preferably, the triggering of the orange rescue protocol includes: operating the annealing furnace at a limited load and conducting a special test on the aging degree of the annealing furnace within 72 hours; When the sapphire annealing health index is less than the first level annealing health threshold and greater than or equal to the second level annealing health threshold When the yellow rescue protocol is triggered; When the sapphire annealing health index is less than the second level annealing health threshold , the output annealing furnace operates normally.

[0014] Preferably, the calculation strategy of the annealing health index HIT of sapphire is specifically as follows:

[0015] in, is the rate of change of electrode contact stress, indicating how fast the electrode contact stress changes over time, and reflects the dynamic changes of the electrode contact state; is the second-order derivative of the phonon group velocity with respect to temperature, reflecting the nonlinear characteristics of the phonon group velocity changing with temperature; are the start time and end time of the annealing health index evaluation, respectively.

[0016] Specifically, the yellow rescue protocol includes: the yellow rescue protocol includes: opening the annular multi-point nozzles evenly arranged around the support frame in the annealing furnace, setting the total flow rate of the injected gas to 0.15 times the effective volume of the furnace chamber, and setting the gas flow ratio between the top of the support frame and the bottom of the annealing furnace to 3:1, suppressing the concentration gradient caused by the rising hot air flow, maintaining the outlet pressure of the annular multi-point nozzles in the range of 0.2-0.3MPa, and uniformly injecting a mixed gas of Ar and hydrogen into the annealing furnace in layers; wherein, there are 12 groups of annular multi-point nozzles, covering the entire axial range of the annealing furnace base support frame.

[0017] It should be noted that the first round of assessment is aimed at providing real-time warning for sudden damage to sapphire, such as lattice fracture; The secondary assessment is used to identify the cumulative damage to sapphire caused by uneven thermal dynamic field in the annealing furnace due to aging of the annealing furnace, increased electrode resistance, and uneven current. Based on a 72-hour sliding window calculation, the coupling strength between dynamic stress and nonlinear vibration of the sapphire lattice can be quantified to provide long-term health assessment warning. It should be noted that the dual-channel monitoring mechanism of the first and second rounds of evaluation avoids misjudgment of a single indicator, such as the annealing furnace briefly exceeding the limit but the HIT is normal.

[0018] A storage medium stores instructions, and when a computer reads the instructions, the computer executes the sapphire annealing furnace operation status monitoring and control method.

[0019] An electronic device comprises a memory, a processor and a computer program stored in the memory and executable on the processor, wherein the processor implements the above-mentioned sapphire annealing furnace operation status monitoring and control method when executing the computer program.

[0020] Compared with the prior art, the technical effects of the present invention are as follows: The present invention aims at the output fluctuation problem caused by the aging of the power supply system, constructs a dynamic compensation algorithm based on a multi-band feature library, and controls the output stability of the power supply within ±0.05% by real-time analysis of the nonlinear characteristics of the rectifier and the capacitance attenuation state, combined with the contact stress-electric field distortion coupling model (compensation accuracy ±0.02V), effectively suppressing the current and voltage distortion caused by component fatigue, eliminating the electric field interference in the lattice stress generation process, and ensuring the electric field uniformity of the sapphire lattice stress generation process. At the same time, the present invention designs a thermal field gradient dynamic compensation algorithm for the clock drift accumulation caused by the aging of the thermostat, and uses 32-point infrared temperature measurement data to real-time analyze the thermal diffusivity difference caused by the furnace body deformation, and introduces surface acoustic wave delay calibration to improve the clock offset compensation accuracy, thereby solving the timing mismatch problem caused by ignoring the dynamic changes of the thermal field in the traditional solution. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative labor. Among them: Figure 1 The present invention provides a sapphire annealing furnace operating status monitoring and control method; Figure 2The figure is a flow chart of a dual-channel monitoring mechanism for the first round of evaluation and the second round of evaluation of the present invention. DETAILED DESCRIPTION

[0022] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are described in detail below in conjunction with the accompanying drawings.

[0023] In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0024] Secondly, the term "one embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The term "in one embodiment" that appears in different places in this specification does not necessarily refer to the same embodiment, nor does it refer to a separate or selective embodiment that is mutually exclusive with other embodiments.

[0025] Embodiment 1: like Figure 1 As shown, the sapphire annealing furnace operation status monitoring and control method of the embodiment of the present invention is as follows: Figure 1 As shown, the specific steps are as follows: S1: Collect the power ripple data of the annealing furnace and perform feature matching processing on the power ripple data; S1 includes the following specific steps: S11: preset the monitoring frequency range and embed an aluminum nitride insulating layer surface acoustic wave filter at the power input end; Exemplarily, in this embodiment, the monitoring frequency range is 20-500kHz; Preferably, the aluminum nitride insulating layer surface acoustic wave filter can effectively suppress the high-frequency electromagnetic noise generated by the heating rod in the annealing furnace and improve the accuracy of the power ripple data; S12: starting the annealing furnace and making it enter a normal working state, and obtaining a ripple current signal of the running annealing furnace within a monitoring frequency range through a temperature-resistant current probe; S13: converting the collected ripple current signal into ripple spectrum data, removing noise in the ripple spectrum data through a filtering algorithm, and normalizing the ripple spectrum data after noise processing; S14: Divide the ripple spectrum data into a plurality of unit ripple spectrums, capture dynamic feature points in each unit ripple spectrum, and import the dynamic feature points into a waveform similarity index calculation strategy, and perform feature matching processing on the power supply ripple data according to the waveform similarity index; The dynamic feature points include: the maximum slope value of the rising edge of the current unit ripple spectrum, the ripple peak voltage of the current unit ripple spectrum, and the time value of the curvature inflection point of the current unit ripple spectrum; Preferably, the waveform similarity index calculation strategy is: ; Among them, DW is the waveform similarity index; They are respectively the maximum slope value of the rising edge of the current unit ripple spectrum, the ripple peak voltage of the current unit ripple spectrum, and the time value of the curvature inflection point of the current unit ripple spectrum; It is the average level of the maximum slope value of the rising edge of all unit ripple spectrums during the last historical operation of the annealing furnace; is the standard deviation of the maximum slope value of the rising edge of all unit ripple spectra during the last historical operation of the annealing furnace; It is the average level of the ripple peak voltage of all unit ripple spectra during the last historical operation of the annealing furnace; is the standard deviation of the ripple peak voltage of all unit ripple spectra during the last historical operation of the annealing furnace; It is the average value of the time value at the curvature inflection point of all unit ripple spectra during the last historical operation of the annealing furnace; is the standard deviation of the time values ​​at all the curvature inflection points during the last historical operation of the annealing furnace; They are slope weight, amplitude weight and time weight respectively; For example, in this embodiment, ; S15: Preset similarity deviation baseline value , and dynamically update similar deviations from the baseline value through exponential smoothing , when the waveform similarity index of the unit ripple spectrum is greater than the similarity deviation baseline value When , the current unit ripple spectrum is marked as abnormal ripple characteristics.

[0026] Exemplarily, in this embodiment, the smoothing coefficient of the exponential smoothing method is 0.2, and 0.2 is the thermal relaxation time constant of sapphire.

[0027] S2: Determine the clock compensation strategy of the distributed temperature controller according to the feature matching result, obtain the clock offset compensation value according to the clock compensation strategy, and synchronize the power ripple data with the temperature controller data through the clock offset compensation value; The clock compensation strategy includes: extracting the matching result of each unit ripple spectrum feature, and executing the first clock compensation strategy when no ripple feature abnormality mark is detected or the unit ripple spectrum of the ripple abnormality mark is discontinuous; The first clock compensation strategy is specifically: A1: Set up the infrared temperature measurement matrix, read the 32-point infrared temperature measurement data of the annealing furnace, and calculate the radial temperature gradient based on the 32-point infrared temperature measurement data. ; A2: Identify the maximum temperature gradient area of ​​the annealing furnace through the temperature gradient identification strategy ; Preferably, the temperature gradient identification strategy is specifically: , where r is the radial coordinate, ; A3: Read the temperature field gradient of the annealing furnace every 2ms and extract the maximum temperature gradient area , calculating the first offset compensation value of each distributed thermostat clock; Preferably, the calculation strategy of the first offset compensation value is: ,in, is the first offset compensation value, k is the first proportional coefficient, , are the actual growth rate and nominal growth rate of sapphire crystal respectively; It should be noted that thermal stress causes a distortion effect on the sapphire lattice, which results in a frequency shift of the crystal resonator and ultimately causes a cumulative clock error; Every 1°C temperature gradient causes the sapphire lattice vibration frequency to shift by 0.02ppm; The sapphire lattice vibration frequency shift is linearly related to the clock error. Considering the influence of the growth rate on the thermal stress accumulation, the Correction Items; A4: Perform timestamp correction processing 500 times per second according to the first offset compensation value, specifically: ; in, are the clock timestamps before and after correction by the first offset compensation value, respectively; is a symbolic function.

[0028] It should be noted that the symbol function It reflects the influence of thermal gradient direction on clock drift. The clock speeds up in the temperature rising area and slows down in the temperature falling area. When two consecutive unit ripple spectra are monitored to be marked as abnormal ripple characteristics, the second clock compensation strategy is executed.

[0029] The second clock compensation strategy is specifically: B1: Register all distributed thermostats in the system, assign a unique device identifier to each device, and set the Lamport logic clock of each device Initialized to 0, where i represents the device identifier of the device; B2: Periodically collect the temperature data Te of each thermostat and calculate the temperature change rate derivative of each thermostat ; B3: Embed the Lamport logical clock value of the current device in each communication message , temperature change rate derivative and device identifiers; B4: The thermostat device sends the generated message to other related devices at the preset time interval. At the same time, each device receives the message from other devices and records the receiving time; B5: When the device with device identifier i receives a message sent by the device with device identifier j, it performs Lamport logical clock update processing, specifically: ,in, The updated logical clock value of the device with device identifier i; It is the Lamport logical clock value of the device with device identifier j carried in the message; B6: After each device receives messages sent by all devices except itself, it performs consistency verification on the temperature change rate derivatives of all received messages, specifically including: calculating the average value of the temperature change rate derivatives of all received messages , according to the average Calculate the temperature change rate derivative and average value of each received message Deviation value of B7: Obtain the second proportionality coefficient h by evaluating the deviation values ​​of multiple devices through the least squares method, and calculate the second offset compensation value according to the second proportionality coefficient ,in, is a second offset compensation value of the device with device identifier i; Preferably, the second offset compensation value The calculation strategy is: ; For example, in this embodiment, ; B8: Calculate the second offset compensation value for each device root , and dynamically update the timestamp of the temperature data of each device, specifically: ,in, They are respectively the timestamps before and after dynamic updating according to the second offset compensation value.

[0030] S3: After the timestamp synchronization is completed, the harmonic phase deviation of the annealing furnace power supply ripple data is re-extracted and the residual clock offset of the distributed temperature controller is calculated and obtained, the first round of monitoring model is established, and the first round of evaluation of the operating status of the annealing furnace is performed; S3 includes the following specific steps: S31: After the timestamp synchronization is completed, re-extract the harmonic phase deviation mean value of the power ripple data marked as abnormal ripple characteristics in the annealing furnace , harmonic frequency mean and harmonic current ; S32: Calculate and obtain the residual clock offset of the distributed temperature controller , establish the first round of monitoring model and conduct the first round of evaluation on the operating status of the annealing furnace; The first round monitoring model includes: a stress impact assessment layer, an impact resistance assessment layer and a first round control protocol triggering layer; The harmonic phase offset mean and residual clock offset are imported into the stress impact assessment layer, and the assessment results are output, specifically: ; represents the carrier mobility associated with the crystal monitoring direction, preferably the crystal monitoring direction is the

[0001] direction, Describes the ability of carriers to migrate in this direction under the action of an electric field; is the thermal strain rate; is the conversion factor; For example, in this embodiment, , is the thermal conductivity of sapphire in the parallel direction; is the elastic modulus of sapphire; is the density of sapphire; is the specific heat capacity of sapphire; It should be noted that the stress impact assessment layer is used to assess the thermal diffusion effect caused by the stress change rate; The edge temperature and center temperature of the sapphire crystal are obtained and imported into the impact resistance evaluation layer. The output evaluation results are as follows: ; is the failure critical coefficient; is the thermal resistance coefficient of sapphire crystal; is the thermal conductivity of sapphire crystal in the vertical direction; It should be noted that The physical meaning of is the critical energy density ratio, which characterizes the threshold value of the crystal from elastic deformation to dislocation nucleation. For example, in this embodiment, Obtained from high temperature uniaxial compression test, , suitable for sapphire crystal Crystal orientation; They are the sapphire crystal edge temperature and the sapphire crystal center temperature respectively; The difference between represents the temperature gradient between the edge and the center of the crystal. It should be noted that the temperature gradient reflects the uneven temperature distribution in the crystal growth environment. The triggering strategy of the first round control protocol triggering layer is specifically as follows: when the output result of the stress impact assessment layer is greater than the output result of the impact resistance assessment layer, the operation state of the output annealing furnace is abnormal, triggering the red emergency rescue protocol of the sapphire lattice; When the output result of the stress impact assessment layer is less than or equal to the output result of the impact resistance assessment layer, the next round of monitoring model is entered.

[0031] Preferably, the red emergency rescue protocol of Sapphire Lattice includes: immediately shutting down and initiating emergency inspection.

[0032] Preferably, the residual clock offset It is calculated by the temperature dependence of the phonon group velocity, specifically: ; It is the residual clock offset. It should be noted that there is a residual error in the clock synchronization between distributed temperature controllers, that is, the small time offset that still exists after being processed by the clock compensation algorithm; is the heater length; is a function of the phonon group velocity with respect to temperature, which describes the speed of the collective motion of phonons in the crystal and is closely related to the lattice vibration and heat conduction of the sapphire crystal; illustratively, in this embodiment, ; is the initial velocity of the phonon group, is the Grüneisen parameter, which reflects the anharmonicity of the lattice vibration and is related to the thermal expansion, thermal conductivity and other properties of the crystal; G is the shear modulus of sapphire, which describes the ability of sapphire to resist shear deformation and reflects the interaction between atoms inside the crystal; is the Boltzmann constant.

[0033] is the rate of change of phonon group velocity with temperature; is the temperature change, which reflects the temperature change in the system. The temperature change will cause the phonon group velocity to change, thus causing the clock offset. It should be noted that As an independent parameter, it reflects the health status of the time synchronization system. Its abnormal growth will be earlier than the HIT threshold, which can play an early warning role in the first round of evaluation. In the multi-parameter monitoring system, It provides direct evidence of anomalies in the time dimension, while HIT reflects the combined effects of multi-physics coupling.

[0034] S4: reconstructing the substrate contact stress field of sapphire, establishing a secondary monitoring model, and inputting the substrate contact stress of sapphire into the secondary monitoring model to perform a secondary evaluation on the operating status of the annealing furnace; In S4, the reconstruction of the substrate contact stress field of the sapphire is specifically as follows: ; is the substrate contact stress; is the piezoelectric constant; are the vacuum dielectric constant and the sapphire relative dielectric constant respectively; A is the electrode area.

[0035] In S4, the secondary round monitoring model includes: Calculate the annealing health index HIT of sapphire and set the first level annealing health threshold and the second level annealing health threshold ,in, ; The annealing health index of Sapphire is compared with the first-level annealing health threshold When the annealing health index of sapphire is greater than or equal to the first level annealing health threshold, When the orange rescue protocol is triggered; Preferably, the triggering of the orange rescue protocol includes: operating the annealing furnace at a limited load and conducting a special test on the aging degree of the annealing furnace within 72 hours; When the sapphire annealing health index is less than the first level annealing health threshold and greater than or equal to the second level annealing health threshold When the yellow rescue protocol is triggered; When the sapphire annealing health index is less than the second level annealing health threshold , the output annealing furnace operates normally.

[0036] Preferably, the calculation strategy of the annealing health index HIT of sapphire is specifically as follows: ;

[0037] in, is the rate of change of electrode contact stress, indicating how fast the electrode contact stress changes over time, and reflects the dynamic changes of the electrode contact state; is the second-order derivative of the phonon group velocity with respect to temperature, reflecting the nonlinear characteristics of the phonon group velocity changing with temperature; are the start time and end time of the annealing health index evaluation, respectively.

[0038] The yellow rescue protocol includes: the yellow rescue protocol includes: opening the annular multi-point nozzles evenly arranged around the support frame in the annealing furnace, setting the total flow rate of the injected gas to 0.15 times the effective volume of the furnace chamber, and setting the gas flow ratio between the top of the support frame and the bottom of the annealing furnace to 3:1, suppressing the concentration gradient caused by the rising hot air flow, maintaining the outlet pressure of the annular multi-point nozzles in the range of 0.2-0.3MPa, and uniformly injecting a mixed gas of Ar and hydrogen into the annealing furnace in layers; wherein, there are 12 groups of annular multi-point nozzles, covering the entire axial range of the annealing furnace base support frame.

[0039] S5: Dynamically adjust the operating status of the annealing furnace according to the results of the first round of evaluation and the second round of evaluation.

[0040] Embodiment 2: In this embodiment, a specific acquisition strategy for acquiring the second proportionality coefficient h according to the deviation value evaluation of multiple devices is provided, including: B71: Extract deviation values ​​of multiple devices, preset ; B72: Establish the objective function, specifically: ; B73: Find the derivative of the objective function with respect to h and set it to 0, specifically: ; Solve the above equation to obtain .

[0041] Embodiment three: This embodiment provides an electronic device, including: a processor and a memory, wherein the memory stores a computer program that can be called by the processor; The processor executes the above-mentioned sapphire annealing furnace operation status monitoring and control method by calling the computer program stored in the memory.

[0042] The electronic device may have relatively large differences due to different configurations or performances, and may include one or more processors (Central Processing Units, CPU) and one or more memories, wherein the memory stores at least one computer program, which is loaded and executed by the processor to implement the sapphire annealing furnace operation status monitoring and control method provided in the above method embodiment. The electronic device may also include other components for realizing the functions of the device, for example, the electronic device may also have components such as a wired or wireless network interface and an input and output interface to input and output data. This embodiment will not be described in detail here.

[0043] Embodiment 4: This embodiment provides a computer-readable storage medium having a rewritable computer program stored thereon; When the computer program is executed on a computer device, the computer device is caused to execute the above-mentioned sapphire annealing furnace operation status monitoring and control method.

[0044] For example, the computer readable storage medium can be a read-only memory (ROM), a random access memory (RAM), a compact disc (CD-ROM), a magnetic tape, a floppy disk, an optical data storage device, etc.

[0045] It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0046] It should be understood that determining B based on A does not mean determining B only based on A. B can also be determined based on A and / or other information.

[0047] The above embodiments can be implemented in whole or in part by software, hardware, firmware or any other combination. When implemented by software, the above embodiments can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions or computer programs. When a computer instruction or computer program is loaded or executed on a computer, a process or function according to an embodiment of the present invention is generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. Computer instructions can be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, computer instructions can be transmitted from one website site, computer, server or data center to another website site, computer, server or data center through a wired network or / and a wireless network. The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server or data center that contains one or more available media sets. The available medium can be a magnetic medium (e.g., a floppy disk, a hard disk, a tape), an optical medium (e.g., a DVD), or a semiconductor medium. The semiconductor medium can be a solid-state hard disk.

[0048] Those skilled in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed in the present invention can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention.

[0049] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0050] In the several embodiments provided by the present invention, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic, for example, the division of units is only one, and there may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0051] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0052] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0053] In the description of this specification, the description with reference to the terms "one embodiment", "example", "specific example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0054] The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention to be protected. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. A sapphire annealing furnace operation status monitoring and control method, characterized in that: The method comprises: S1: Collect the power ripple data of the annealing furnace and perform feature matching processing on the power ripple data; S2: Determine the clock compensation strategy of the distributed temperature controller according to the feature matching result, obtain the clock offset compensation value according to the clock compensation strategy, and synchronize the power ripple data with the temperature controller data through the clock offset compensation value; S3: After the timestamp synchronization is completed, the harmonic phase deviation of the annealing furnace power supply ripple data is re-extracted and the residual clock offset of the distributed temperature controller is calculated and obtained, the first round of monitoring model is established, and the first round of evaluation of the operating status of the annealing furnace is performed; S4: reconstructing the substrate contact stress field of sapphire, establishing a secondary monitoring model, and inputting the substrate contact stress of sapphire into the secondary monitoring model to perform a secondary evaluation on the operating status of the annealing furnace; S5: Dynamically adjust the operating status of the annealing furnace according to the results of the first round of evaluation and the second round of evaluation.

2. The sapphire annealing furnace operation status monitoring and control method according to claim 1, characterized in that: S1 includes the following specific steps: S11: preset the monitoring frequency range and embed an aluminum nitride insulating layer surface acoustic wave filter at the power input end; S12: starting the annealing furnace and making it enter a normal working state, and obtaining a ripple current signal of the running annealing furnace within a monitoring frequency range through a temperature-resistant current probe; S13: converting the collected ripple current signal into ripple spectrum data, removing noise in the ripple spectrum data through a filtering algorithm, and normalizing the ripple spectrum data after noise processing; S14: Divide the ripple spectrum data into a plurality of unit ripple spectrums, capture dynamic feature points in each unit ripple spectrum, and import the dynamic feature points into a waveform similarity index calculation strategy, and perform feature matching processing on the power supply ripple data according to the waveform similarity index; The dynamic feature points include: the maximum slope value of the rising edge of the current unit ripple spectrum, the ripple peak voltage of the current unit ripple spectrum, and the time value of the curvature inflection point of the current unit ripple spectrum; S15: Preset similarity deviation baseline value , and dynamically update similar deviations from the baseline value through exponential smoothing , when the waveform similarity index of the unit ripple spectrum is greater than the similarity deviation baseline value When , the current unit ripple spectrum is marked as abnormal ripple characteristics.

3. The sapphire annealing furnace operation status monitoring and control method according to claim 2, characterized in that: The clock compensation strategy includes: extracting the matching result of each unit ripple spectrum feature, and executing the first clock compensation strategy when no ripple feature abnormality mark is detected or the unit ripple spectrum of the ripple abnormality mark is discontinuous; When two consecutive unit ripple spectra are monitored to be marked as abnormal ripple characteristics, the second clock compensation strategy is executed.

4. The sapphire annealing furnace operation status monitoring and control method according to claim 3, characterized in that: The first clock compensation strategy is specifically: A1: Set up the infrared temperature measurement matrix, read the 32-point infrared temperature measurement data of the annealing furnace, and calculate the radial temperature gradient based on the 32-point infrared temperature measurement data. ; A2: Identify the maximum temperature gradient area of ​​the annealing furnace through the temperature gradient identification strategy ; A3: Read the temperature field gradient of the annealing furnace every 2ms and extract the maximum temperature gradient area , calculating the first offset compensation value of each distributed thermostat clock; A4: Perform timestamp correction processing 500 times per second according to the first offset compensation value, specifically: ； in, are the clock timestamps before and after correction by the first offset compensation value, respectively; is a symbolic function.

5. The sapphire annealing furnace operation status monitoring and control method according to claim 4, characterized in that: The second clock compensation strategy is specifically: B1: Register all distributed thermostats in the system, assign a unique device identifier to each device, and set the Lamport logic clock of each device Initialized to 0, where i represents the device identifier of the device; B2: Periodically collect the temperature data TE of each thermostat and calculate the temperature change rate derivative of each thermostat ; B3: Embed the Lamport logical clock value of the current device in each communication message , temperature change rate derivative and device identifiers; B4: The thermostat device sends the generated message to other related devices at the preset time interval. At the same time, each device receives the message from other devices and records the receiving time; B5: When the device with device identifier i receives a message sent by the device with device identifier j, it performs Lamport logical clock update processing, specifically: ,in, The updated logical clock value of the device with device identifier i; It is the Lamport logical clock value of the device with device identifier j carried in the message; B6: After each device receives messages sent by all devices except itself, it performs consistency verification on the temperature change rate derivatives of all received messages, specifically including: calculating the average value of the temperature change rate derivatives of all received messages , according to the average Calculate the temperature change rate derivative and average value of each received message Deviation value of B7: Obtain the second proportionality coefficient h by evaluating the deviation values ​​of multiple devices through the least squares method, and calculate the second offset compensation value according to the second proportionality coefficient ,in, is a second offset compensation value of the device with device identifier i; B8: Calculate the second offset compensation value for each device root , and dynamically update the timestamp of the temperature data of each device, specifically: ,in, They are respectively the timestamps before and after dynamic updating according to the second offset compensation value.

6. The sapphire annealing furnace operation status monitoring and control method according to claim 5, characterized in that: S3 includes the following specific steps: S31: After the timestamp synchronization is completed, re-extract the harmonic phase deviation mean value of the power ripple data marked as abnormal ripple characteristics in the annealing furnace , harmonic frequency mean and harmonic current ; S32: Calculate and obtain the residual clock offset of the distributed temperature controller , establish the first round of monitoring model and conduct the first round of evaluation on the operating status of the annealing furnace; The first round monitoring model includes: a stress impact assessment layer, an impact resistance assessment layer and a first round control protocol triggering layer; The harmonic phase offset mean and residual clock offset are imported into the stress impact assessment layer, and the assessment results are output, specifically: ; represents the carrier mobility associated with the crystal monitoring direction; is the thermal strain rate; is the conversion factor; The edge temperature and center temperature of the sapphire crystal are obtained and imported into the impact resistance evaluation layer. The output evaluation results are as follows: ; is the failure critical coefficient; is the thermal resistance coefficient of sapphire crystal; is the thermal conductivity of sapphire crystal in the vertical direction; They are the sapphire crystal edge temperature and the sapphire crystal center temperature respectively; The triggering strategy of the first round control protocol triggering layer is specifically as follows: when the output result of the stress impact assessment layer is greater than the output result of the impact resistance assessment layer, the operation state of the output annealing furnace is abnormal, triggering the red emergency rescue protocol of the sapphire lattice; When the output result of the stress impact assessment layer is less than or equal to the output result of the impact resistance assessment layer, the next round of monitoring model is entered.

7. The sapphire annealing furnace operation status monitoring and control method according to claim 6, characterized in that: In S4, the reconstruction of the substrate contact stress field of the sapphire is specifically as follows: ； is the substrate contact stress; is the piezoelectric constant; are the vacuum dielectric constant and the sapphire relative dielectric constant respectively; A is the electrode area.

8. The sapphire annealing furnace operation status monitoring and control method according to claim 7, characterized in that: In S4, the secondary round monitoring model includes: Calculate the annealing health index HIT of sapphire and set the first level annealing health threshold and the second level annealing health threshold ,in, ; The annealing health index of Sapphire is compared with the first-level annealing health threshold When the annealing health index of sapphire is greater than or equal to the first level annealing health threshold, When the orange rescue protocol is triggered; When the sapphire annealing health index is less than the first level annealing health threshold and greater than or equal to the second level annealing health threshold When the yellow rescue protocol is triggered; When the sapphire annealing health index is less than the second level annealing health threshold , the output annealing furnace operates normally.

9. The sapphire annealing furnace operation status monitoring and control method according to claim 8, characterized in that: The yellow rescue protocol includes: opening the annular multi-point nozzles evenly arranged around the support frame in the annealing furnace, setting the total flow rate of the injected gas to 0.15 times the effective volume of the furnace chamber, and setting the gas flow ratio between the top of the support frame and the bottom of the annealing furnace to 3:1, suppressing the concentration gradient caused by the rising hot air flow, maintaining the outlet pressure of the annular multi-point nozzles in the range of 0.2-0.3MPa, and uniformly injecting a mixed gas of Ar and hydrogen into the annealing furnace in layers; wherein, there are 12 groups of annular multi-point nozzles, covering the entire axial range of the annealing furnace base support frame.

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