High-temperature blocking test circuit, test device and test method

Abstract

The invention provides a high-temperature blocking test circuit, device and method, and the circuit comprises an AC voltage source branch, a DC voltage source branch, a gate voltage source branch and a grounding switch which are electrically connected with one another. Carrying out a high-temperature alternating current blocking test on the tested power semiconductor device by adopting an alternating current voltage source branch; under the condition that the grounding switch and the control switch of the direct-current voltage source branch are both closed, the direct-current voltage source branch is adopted to carry out high-temperature direct-current blocking test on the tested power semiconductor device; and under the condition that the grounding switch is switched off and the control switch of the gate pole voltage source branch is switched on, the gate pole voltage source branch is adopted to carry out high-temperature gate pole reverse bias test on the tested power semiconductor device. According to the circuit, by controlling access of different voltage sources, screening and reliability testing of high-temperature alternating current blocking, high-temperature direct current blocking and high-temperature gate pole reverse bias of the tested power semiconductor device are achieved.

Description

Technical Field

[0001] The present application relates to the field of power electronics technology, and in particular to a high-temperature blocking test circuit, a high-temperature blocking test device, and a method for testing a power semiconductor device. Background Art

[0002] Power semiconductor devices are the core of power conversion for large-capacity power electronic equipment. The reliability of the devices determines the reliability of the long-term operation of the equipment. The high-temperature blocking test is used to verify the voltage tolerance performance of the device in a high-temperature environment, which is an important criterion for system reliability and safety. Carrying out early failure screening and reliability testing of high-temperature blocking tests for power semiconductor devices can, on the one hand, discover the weak links and deficiencies of the product at high temperatures, and then improve the product design and production process to improve the overall performance and quality of the product. On the other hand, it can evaluate the product's ability to operate stably under long-term high-temperature conditions and predict its life in actual use.

[0003] Currently commonly used power semiconductor device test circuits and test methods cannot fully meet the requirements of high temperature blocking failure screening and reliability testing of some types of power semiconductor devices, such as IGCT. Summary of the invention

[0004] The main purpose of the present application is to provide a high-temperature blocking test circuit, a high-temperature blocking test device and a method for testing a power semiconductor device, so as to at least solve the problem that the test circuits and test methods in the prior art cannot fully meet the requirements of high-temperature blocking failure screening and reliability testing of devices.

[0005] In order to achieve the above-mentioned purpose, according to one aspect of the present application, a high-temperature blocking test circuit is provided, comprising an electrically connected AC voltage source branch, a DC voltage source branch, a gate voltage source branch and a grounding switch, wherein a first end of the grounding switch is electrically connected to the gate of the power semiconductor device under test, a second end of the grounding switch is grounded, and the AC voltage source branch, the DC voltage source branch and the gate voltage source branch all include a control switch; when the grounding switch and the control switch of the AC voltage source branch are both closed, the AC voltage source branch is used to perform a high-temperature AC blocking test on the power semiconductor device under test; when the grounding switch and the control switch of the DC voltage source branch are both closed, the DC voltage source branch is used to perform a high-temperature DC blocking test on the power semiconductor device under test; when the grounding switch is disconnected and the control switch of the gate voltage source branch is closed, the gate voltage source branch is used to perform a high-temperature gate reverse bias test on the power semiconductor device under test.

[0006] Optionally, the AC voltage source branch includes: an AC voltage source; a first current limiting module, wherein the first end of the first current limiting module is electrically connected to the first end of the AC voltage source; a rectifier circuit, wherein the first end of the rectifier circuit is electrically connected to the second end of the first current limiting module, the second end of the rectifier circuit is electrically connected to the anode of the power semiconductor device under test, and the rectifier circuit includes a control switch of the AC voltage source branch.

[0007] Optionally, the control switch of the AC voltage source branch is a first switch device and a second switch device, the second end of the AC voltage source is electrically connected to the cathode of the power semiconductor device under test, and the rectifier circuit includes: a first diode, the positive electrode of the first diode is electrically connected to the second end of the first current limiting module; the first switch device, the first end of the first switch device is electrically connected to the negative electrode of the first diode, and the second end of the first switch device is electrically connected to the anode of the power semiconductor device under test; the second diode, the negative electrode of the second diode is electrically connected to the second end of the first current limiting module; the second switch device, the first end of the second switch device is electrically connected to the positive electrode of the second diode, and the second end of the second switch device is electrically connected to the anode of the power semiconductor device under test.

[0008] Optionally, the control switch of the AC voltage source branch is a third switching device, and the rectifier circuit includes: a diode rectifier bridge structure, the diode rectifier bridge structure is composed of a third diode, a fourth diode, a fifth diode and a sixth diode, the cathode of the third diode and the anode of the fourth diode are both electrically connected to the second end of the first current limiting module, the cathode of the fifth diode and the anode of the sixth diode are both electrically connected to the second end of the AC voltage source, and the anode of the third diode and the anode of the fifth diode are both electrically connected to the cathode of the power semiconductor device under test; the third switching device, the first end of the third switching device is electrically connected to the cathode of the fourth diode and the cathode of the sixth diode, respectively, and the second end of the third switching device is electrically connected to the anode of the power semiconductor device under test.

[0009] Optionally, the control switch of the DC voltage source branch is a fourth switching device, and the DC voltage source branch includes: a DC voltage source, a first end of the DC voltage source is electrically connected to the AC voltage source branch and the cathode of the power semiconductor device under test, respectively; a second current limiting module, a first end of the second current limiting module is electrically connected to the second end of the DC voltage source; and a fourth switching device, a first end of the fourth switching device is electrically connected to the second end of the second current limiting module, and a second end of the fourth switching device is electrically connected to the AC voltage source branch and the anode of the power semiconductor device under test, respectively.

[0010] Optionally, the control switch of the gate voltage source branch is a fifth switching device, and the gate voltage source branch includes: a gate voltage source, a first end of the gate voltage source is electrically connected to the cathode of the power semiconductor device under test; and a fifth switching device, a first end of the fifth switching device is electrically connected to the second end of the gate voltage source, and a second end of the fifth switching device is electrically connected to the gate of the power semiconductor device under test.

[0011] Optionally, the high-temperature blocking test circuit also includes: a first monitoring branch, a first end of the first monitoring branch is electrically connected to the anode of the power semiconductor device under test, a second end of the first monitoring branch is electrically connected to the cathode of the power semiconductor device under test, and the first monitoring branch is used to monitor the terminal voltage and / or leakage current between the anode and cathode of the power semiconductor device under test; a second monitoring branch, a first end of the second monitoring branch is electrically connected to the gate of the power semiconductor device under test, a second end of the second monitoring branch is electrically connected to the cathode of the power semiconductor device under test, and the second monitoring branch is used to monitor the terminal voltage and / or leakage current between the gate and cathode of the power semiconductor device under test; a protection branch, a first end of the protection branch is electrically connected to the anode of the power semiconductor device under test, and a second end of the protection branch is electrically connected to the cathode of the power semiconductor device under test.

[0012] Optionally, the first monitoring branch includes: a first voltage monitoring device, a first end of the first voltage monitoring device is electrically connected to the anode of the power semiconductor device under test, and a second end of the first voltage monitoring device is electrically connected to the cathode of the power semiconductor device under test; a first current monitoring device, a first end of the first current monitoring device is electrically connected to the second end of the first voltage monitoring device, and a second end of the first current monitoring device is electrically connected to the AC voltage source branch and the DC voltage source branch, respectively.

[0013] Optionally, the second monitoring branch includes: a second voltage monitoring device, a first end of the second voltage monitoring device is electrically connected to the gate of the power semiconductor device under test, and a second end of the second voltage monitoring device is electrically connected to the cathode of the power semiconductor device under test; a second current monitoring device, a first end of the second current monitoring device is electrically connected to the first end of the second voltage monitoring device, and a second end of the second current monitoring device is electrically connected to the second end of the second voltage monitoring device.

[0014] Optionally, the protection branch includes: a sixth switch device, a first end of the sixth switch device is electrically connected to the anode of the power semiconductor device under test, and a second end of the sixth switch device is electrically connected to the cathode of the power semiconductor device under test.

[0015] According to another aspect of the present application, a high-temperature blocking test device is provided, comprising: any one of the high-temperature blocking test circuits, the high-temperature blocking test circuit being electrically connected to the power semiconductor device under test and used to perform a high-temperature blocking test on the power semiconductor device under test; and a heating device, connected to the power semiconductor device under test and used to heat the power semiconductor device under test.

[0016] According to another aspect of the present application, a method for testing a power semiconductor device using any one of the high-temperature blocking test circuits is provided, comprising: when the power semiconductor device under test is heated to a preset temperature, controlling the grounding switch and the control switch of the AC voltage source branch to be closed, so as to use the AC voltage source branch to perform a high-temperature AC blocking test on the power semiconductor device under test, or controlling the grounding switch and the control switch of the DC voltage source branch to be closed, so as to use the DC voltage source branch to perform a high-temperature DC blocking test on the power semiconductor device under test; or controlling the grounding switch to be disconnected and the control switch of the gate voltage source branch to be closed, so as to use the gate voltage source branch to perform a high-temperature gate reverse bias test on the power semiconductor device under test.

[0017] Optionally, the AC voltage source branch includes an electrically connected AC voltage source, a first current limiting module, a first diode, a first switching device, a second diode and a second switching device. When the power semiconductor device under test is heated to a preset temperature, the grounding switch and the control switch of the AC voltage source branch are controlled to be closed, so as to use the AC voltage source branch to perform a high-temperature AC blocking test on the power semiconductor device under test, including: when the power semiconductor device under test is heated to a first preset temperature, closing the first switching device and the grounding switch, disconnecting the second switching device, and disconnecting the DC voltage source branch and the gate voltage source branch from the power semiconductor device under test, so as to use the AC voltage source branch to perform a forward half-wave high-temperature AC blocking screening and a test on the power semiconductor device under test. reliability test; when the power semiconductor device under test is heated to a second preset temperature, the second switch device and the grounding switch are closed, the first switch device is disconnected, and the DC voltage source branch and the gate voltage source branch are disconnected from the power semiconductor device under test, so as to use the AC voltage source branch to perform negative half-wave high-temperature AC blocking screening and reliability test on the power semiconductor device under test; when the power semiconductor device under test is heated to a third preset temperature, the first switch device, the second switch device and the grounding switch are closed, and the DC voltage source branch and the gate voltage source branch are disconnected from the power semiconductor device under test, so as to use the AC voltage source branch to perform high-temperature full-wave AC blocking screening and reliability test on the power semiconductor device under test.

[0018] Optionally, the preset temperature is related to the maximum operating junction temperature of the power semiconductor device under test.

[0019] Applying the technical solution of the present application, the above-mentioned high-temperature blocking test circuit includes an electrically connected AC voltage source branch, a DC voltage source branch, a gate voltage source branch and a grounding switch. When the control switches of the grounding switch and the AC voltage source branch are closed, the AC voltage source branch is used to perform a high-temperature AC blocking test on the power semiconductor device under test; when the control switches of the grounding switch and the DC voltage source branch are closed, the DC voltage source branch is used to perform a high-temperature DC blocking test on the power semiconductor device under test; when the grounding switch is disconnected and the control switch of the gate voltage source branch is closed, the gate voltage source branch is used to perform a high-temperature gate reverse bias test on the power semiconductor device under test. The circuit controls the access of different voltage sources to achieve the screening and reliability testing of high-temperature AC blocking, high-temperature DC blocking and high-temperature gate reverse bias of the power semiconductor device under test, solving the problem that the test circuits and test methods in the prior art cannot fully meet the requirements of device high-temperature blocking failure screening and reliability testing. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The drawings constituting part of the present application are used to provide a further understanding of the present application. The exemplary embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0021] Figure 1 A schematic structural diagram of a high temperature blocking test circuit provided in an embodiment of the present application is shown;

[0022] Figure 2 A schematic structural diagram of another high temperature blocking test circuit provided in an embodiment of the present application is shown;

[0023] Figure 3 A schematic structural diagram of another high temperature blocking test circuit provided in an embodiment of the present application is shown;

[0024] Figure 4 A schematic structural diagram of another high temperature blocking test circuit provided in an embodiment of the present application is shown;

[0025] Figure 5 A schematic structural diagram of another high temperature blocking test circuit provided in an embodiment of the present application is shown;

[0026] Figure 6 A schematic structural diagram of a high temperature blocking test device provided in an embodiment of the present application is shown;

[0027] Figure 7A flow chart of a method for testing a power semiconductor device using any one of the high-temperature blocking test circuits provided in an embodiment of the present application is shown.

[0028] The above drawings include the following reference numerals:

[0029] 01, high temperature blocking test circuit; 02, heating device; 10, AC voltage source branch; 11, first current limiting module; 12, rectifier circuit; 20, DC voltage source branch; 21, second current limiting module; 30, gate voltage source branch; 40, power semiconductor device under test; 50, first monitoring branch; 60, second monitoring branch; 70, protection branch; AC, AC voltage source; DC, DC voltage source; G, gate voltage source; S0, grounding switch; S1, first switch device; S2, The second switching device; S3, the third switching device; S4, the fourth switching device; S5, the fifth switching device; S6, the sixth switching device; D1, the first diode; D2, the second diode; D3, the third diode; D4, the fourth diode; D5, the fifth diode; D6, the sixth diode; V1, the first voltage monitoring device; V2, the second voltage monitoring device; A1, the first current monitoring device; A2, the second current monitoring device; R1, the first current limiting resistor; R2, the second current limiting resistor. DETAILED DESCRIPTION

[0030] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0031] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0032] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0033] For the convenience of description, some nouns or terms involved in the embodiments of the present application are explained below:

[0034] Integrated Gate-Commutated Thyristor: Integrated Gate-Commutated Thyristor, referred to as IGCT;

[0035] Insulated Gate Bipolar Transistor: Insulated Gate Bipolar Transistor, referred to as IGBT;

[0036] Metal Oxide Semiconductor Field Effect Transistor: Metal Oxide Semiconductor Field Effect Transistor, referred to as MOSFET;

[0037] Gate Turn-off Thyristor: Gate Turn-off Thyristor, referred to as GTO;

[0038] Power semiconductor device under test: Device Under Test, referred to as DUT;

[0039] Specified upper limit: Upper Specification Limit, referred to as USL.

[0040] As introduced in the background technology, the voltage operating conditions of thyristor devices in the prior art are generally 50Hz or 60Hz sine waves, and the operating conditions of IGBT and MOSFET devices are generally DC voltage. For IGCT devices, in actual application, they can be switched off in thyristor mode, and the device is subjected to AC voltage; at the same time, they can also be actively shut down similar to the IGBT and MOSFET working modes, and the device is directly subjected to DC voltage. Therefore, when performing high-temperature blocking screening and reliability evaluation of IGCT devices, high-temperature AC blocking and high-temperature DC blocking need to be performed separately.

[0041] The commonly used power semiconductor device test circuits and test methods currently mainly meet the test requirements of high-temperature AC blocking of various thyristor devices and high-temperature DC blocking of IGBT and MOSFET devices. As a new type of power electronic device, the current test circuits and test methods of IGCT cannot fully meet the requirements of device high-temperature blocking failure screening and reliability testing.

[0042] In order to overcome the shortcomings of the high-temperature blocking test circuit and test method in the prior art that cannot meet the requirements of IGCT device screening and reliability testing, and to solve the problem that the test circuit and test method in the prior art cannot fully meet the requirements of device high-temperature blocking failure screening and reliability testing, the embodiments of the present application provide a high-temperature blocking test circuit, a high-temperature blocking test device and a method for testing a power semiconductor device.

[0043] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention.

[0044] In this embodiment, a high temperature blocking test circuit is provided. Figure 1 As shown, it includes an electrically connected AC voltage source branch 10, a DC voltage source branch 20, a gate voltage source branch 30 and a grounding switch S0, wherein the first end of the grounding switch S0 is electrically connected to the gate of the power semiconductor device 40 under test, and the second end of the grounding switch S0 is grounded, and the AC voltage source branch 10, the DC voltage source branch 20 and the gate voltage source branch 30 all include control switches; when the grounding switch S0 and the control switch of the AC voltage source branch 10 are both closed, the AC voltage source branch 10 is used to perform a high-temperature AC blocking test on the power semiconductor device 40 under test; when the grounding switch S0 and the control switch of the DC voltage source branch 20 are both closed, the DC voltage source branch 20 is used to perform a high-temperature DC blocking test on the power semiconductor device 40 under test; when the grounding switch S0 is disconnected and the control switch of the gate voltage source branch 30 is closed, the gate voltage source branch 30 is used to perform a high-temperature gate reverse bias test on the power semiconductor device 40 under test.

[0045] The above-mentioned high-temperature blocking test circuit of the present application includes an electrically connected AC voltage source branch, a DC voltage source branch, a gate voltage source branch and a grounding switch. When the control switches of the grounding switch and the AC voltage source branch are closed, the AC voltage source branch is used to perform a high-temperature AC blocking test on the power semiconductor device under test; when the control switches of the grounding switch and the DC voltage source branch are closed, the DC voltage source branch is used to perform a high-temperature DC blocking test on the power semiconductor device under test; when the grounding switch is disconnected and the control switch of the gate voltage source branch is closed, the gate voltage source branch is used to perform a high-temperature gate reverse bias test on the power semiconductor device under test. The circuit controls the access of different voltage sources to achieve the screening and reliability testing of high-temperature AC blocking, high-temperature DC blocking and high-temperature gate reverse bias of the power semiconductor device under test, solving the problem that the test circuits and test methods in the prior art cannot fully meet the requirements of device high-temperature blocking failure screening and reliability testing.

[0046] The high temperature blocking test circuit can also be used for screening and reliability testing of various thyristor devices such as IGCT and GTO, and transistor devices such as IGBT and MOSFET. The power semiconductor device under test is generally a three-port device. In this embodiment, IGCT is taken as an example. The power semiconductor device under test includes an anode (A), a cathode (K) and a gate (G).

[0047] In some embodiments, such as Figure 2 As shown, the high temperature blocking test circuit further includes: a first monitoring branch 50, wherein the first end of the first monitoring branch 50 is electrically connected to the anode of the power semiconductor device 40 under test, and the second end of the first monitoring branch 50 is electrically connected to the cathode of the power semiconductor device 40 under test, and the first monitoring branch 50 is used to monitor the terminal voltage and / or leakage current between the anode and the cathode of the power semiconductor device 40 under test; a second monitoring branch 60, wherein the first end of the second monitoring branch 60 is electrically connected to the gate of the power semiconductor device 40 under test, and the second end of the second monitoring branch 60 is electrically connected to the cathode of the power semiconductor device 40 under test, and the second monitoring branch 60 is used to monitor the terminal voltage and / or leakage current between the gate and the cathode of the power semiconductor device 40 under test; and a protection branch 70, wherein the first end of the protection branch 70 is electrically connected to the anode of the power semiconductor device 40 under test, and the second end of the protection branch 70 is electrically connected to the cathode of the power semiconductor device 40 under test.

[0048] The first monitoring branch includes at least one current source and a voltage source connected in series, the current source is used to monitor the leakage current flowing through the anode and cathode of the power semiconductor device under test, and the voltage source is used to monitor the terminal voltage of the anode and cathode of the power semiconductor device under test. The second monitoring branch includes at least one current source and a voltage source connected in parallel, the current source is used to monitor the leakage current flowing through the gate and cathode of the power semiconductor device under test, and the voltage source is used to monitor the terminal voltage of the gate and cathode of the power semiconductor device under test.

[0049] The protection branch includes at least one switch device, which is used to short-circuit the anode and cathode of the power semiconductor device under test for short-circuit protection. The protection branch can be a single-pole single-throw switch, or a switch device with a control terminal such as a transistor. In addition, the protection branch can be composed of multiple switch devices in parallel, so that when one switch device is damaged, the power semiconductor device under test can be short-circuited through other undamaged devices.

[0050] In some embodiments, such as Figure 3 As shown, the AC voltage source branch includes: an AC voltage source AC; a first current limiting module 11, wherein the first end of the first current limiting module 11 is electrically connected to the first end of the AC voltage source AC; a rectifier circuit 12, wherein the first end of the rectifier circuit 12 is electrically connected to the second end of the first current limiting module 11, and the second end of the rectifier circuit 12 is electrically connected to the anode of the power semiconductor device 40 under test, and the rectifier circuit 12 includes a control switch of the AC voltage source branch.

[0051] Among them, the rectifier circuit can control the waveform output by the AC voltage source branch to realize the high-temperature AC blocking screening and reliability test of the positive half-wave, the high-temperature AC blocking screening and reliability test of the negative half-wave, and the high-temperature AC blocking screening and reliability test under the full-wave rectifier waveform of the tested power semiconductor device. The first current limiting module can be composed of one resistor, or it can be composed of multiple resistors connected in series or in parallel.

[0052] Take the first current limiting module consisting of a resistor as an example. Figure 4 As shown, the first current limiting module is a resistor R1.

[0053] In some embodiments, such as Figure 4As shown, the control switches of the AC voltage source branch are a first switch device S1 and a second switch device S2, the second end of the AC voltage source AC is electrically connected to the cathode of the power semiconductor device 40 under test, and the rectifier circuit includes: a first diode D1, the anode of the first diode D1 is electrically connected to the second end of the first current limiting module 11; the first switch device S1, the first end of the first switch device S1 is electrically connected to the cathode of the first diode D1, and the second end of the first switch device S1 is electrically connected to the anode of the power semiconductor device 40 under test; a second diode D2, the cathode of the second diode D2 is electrically connected to the second end of the first current limiting module 11; the second switch device S2, the first end of the second switch device S2 is electrically connected to the anode of the second diode D2, and the second end of the second switch device S2 is electrically connected to the anode of the power semiconductor device 40 under test.

[0054] Among them, Figure 4 As shown, the AC voltage source branch includes an AC voltage source AC, a first current limiting resistor R1, a first diode D1, a second diode D2, a first switch device S1, and a second switch device S2. The AC voltage source AC can provide a 50Hz or 60Hz sine wave voltage. The maximum output voltage of the AC voltage source AC should be higher than the rated voltage of the power semiconductor device under test. The output capacity can generally consider a 20% redundancy design; the first current limiting resistor R1 is used to limit the maximum current when the AC voltage source branch is connected. The first current limiting resistor R1 should not be too small to ensure that the maximum current does not exceed the upper limit of the AC voltage source AC when the test circuit is short-circuited. At the same time, the first current limiting resistor R1 should not be too large to ensure that the voltage division of the first current limiting resistor R1 is too large when the test circuit is working normally, and generally should not exceed 5%; the first diode D1 and the first switch device S1 provide a forward path when the AC voltage source branch is connected; the second diode D2 and the second switch device S2 provide a reverse path when the AC voltage source branch is connected. The withstand voltages of the first diode D1 and the first switch device S1, the second diode D2 and the second switch device S2 should all be higher than the maximum output voltage of the AC voltage source AC.

[0055] In some embodiments, Figure 5As shown, the control switch of the AC voltage source branch is a third switch device S3, and the rectifier circuit includes: a diode rectifier bridge structure, the diode rectifier bridge structure is composed of a third diode D3, a fourth diode D4, a fifth diode D5 and a sixth diode D6, the cathode of the third diode D3 and the anode of the fourth diode D4 are both electrically connected to the second end of the first current limiting module 11, the cathode of the fifth diode D5 and the anode of the sixth diode D6 are both electrically connected to the second end of the AC voltage source AC, and the anode of the third diode D3 and the anode of the fifth diode D5 are both electrically connected to the cathode of the power semiconductor device 40 under test; the third switch device S3, the first end of the third switch device S3 is electrically connected to the cathode of the fourth diode D4 and the cathode of the sixth diode D6 respectively, and the second end of the third switch device S3 is electrically connected to the anode of the power semiconductor device 40 under test.

[0056] Among them, the third diode D3, the fourth diode D4, the fifth diode D5 and the sixth diode D6 form a diode rectifier bridge, which can enable the above-mentioned AC voltage source AC to provide a full-wave rectified voltage waveform, thereby improving the test efficiency of high-temperature AC blocking; the above-mentioned third switching device S3 provides a path for the AC voltage source branch to be connected.

[0057] In some embodiments, such as Figure 3 As shown, the control switch of the DC voltage source branch is a fourth switch device S4, and the DC voltage source branch includes: a DC voltage source DC, the first end of the DC voltage source DC is respectively electrically connected to the AC voltage source branch and the cathode of the power semiconductor device 40 under test; a second current limiting module 21, the first end of the second current limiting module 21 is electrically connected to the second end of the DC voltage source DC; the fourth switch device S4, the first end of the fourth switch device S4 is electrically connected to the second end of the second current limiting module 21, and the second end of the fourth switch device S4 is respectively electrically connected to the AC voltage source branch and the anode of the power semiconductor device 40 under test.

[0058] The second current limiting module may be composed of one resistor, or may be composed of multiple resistors connected in series or in parallel. For example, the first current limiting module may be composed of one resistor. Figure 4 and Figure 5 As shown, the second current limiting module is a resistor R2.

[0059] The DC voltage source branch includes a DC voltage source DC, a second current limiting resistor R2 and a third switch device S3. The DC voltage source DC provides a DC voltage. The maximum output voltage of the DC voltage source DC should be higher than 80% of the rated voltage of the power semiconductor device under test. The output capacity can generally consider a 20% redundancy design; the second current limiting resistor R2 is used to limit the maximum current when the current voltage source branch is connected. The second current limiting resistor R2 should not be too small to ensure that the maximum current does not exceed the upper limit of the DC voltage source DC when the test circuit is short-circuited. At the same time, the second current limiting resistor R2 should not be too large to ensure that the voltage division of the second current limiting resistor R2 is too large when the test circuit works normally, which should generally not exceed 5%; the third switch device S3 provides a path for the DC voltage source branch to be connected. The withstand voltage selection of the third switch device S3 should be higher than the maximum output voltage of the DC voltage source DC.

[0060] In some embodiments, such as Figure 4 and Figure 5 As shown, the control switch of the above-mentioned gate voltage source branch is the fifth switch device S5, and the above-mentioned gate voltage source branch includes: a gate voltage source G, a first end of the above-mentioned gate voltage source G is electrically connected to the cathode of the above-mentioned power semiconductor device 40 under test; the above-mentioned fifth switch device S5, a first end of the above-mentioned fifth switch device S5 is electrically connected to the second end of the above-mentioned gate voltage source G, and a second end of the above-mentioned fifth switch device S5 is electrically connected to the gate of the above-mentioned power semiconductor device 40 under test.

[0061] The gate voltage source branch includes a gate voltage source G and a fifth switch device S5. The gate voltage source G provides a gate reverse bias voltage, and the maximum output voltage of the gate voltage source G should be higher than the gate reverse bias rated voltage of the power semiconductor device under test, and the output capacity can generally be designed with 20% redundancy; the fifth switch device S5 provides a path for the gate voltage source G to be connected; the grounding switch S0 can short-circuit the gate and cathode of the power semiconductor device under test.

[0062] In some embodiments, such as Figure 4 and Figure 5 As shown, the first monitoring branch includes: a first voltage monitoring device V1, a first end of the first voltage monitoring device V1 is electrically connected to the anode of the power semiconductor device 40 under test, and a second end of the first voltage monitoring device V1 is electrically connected to the cathode of the power semiconductor device 40 under test; a first current monitoring device A1, a first end of the first current monitoring device A1 is electrically connected to the second end of the first voltage monitoring device V1, and a second end of the first current monitoring device A1 is electrically connected to the AC voltage source branch 10 and the DC voltage source branch 20, respectively.

[0063] The first monitoring branch includes a first voltage monitoring device V1 and a first current monitoring device A1. The first voltage monitoring device V1 is used to monitor the terminal voltage of the anode and cathode of the power semiconductor device under test; the first current monitoring device A1 is used to monitor the leakage current flowing through the anode and cathode of the power semiconductor device under test; the first voltage monitoring device V1 and the first current monitoring device A1 should have a variable frequency sampling function, that is, in the early stage of the test, the sampling frequency is high, and in the middle and late stages of the test, the test sampling frequency is appropriately reduced as needed.

[0064] In some embodiments, Figure 4 and Figure 5 As shown, the second monitoring branch 60 includes: a second voltage monitoring device V2, a first end of the second voltage monitoring device V2 is electrically connected to the gate of the power semiconductor device 40 under test, and a second end of the second voltage monitoring device V2 is electrically connected to the cathode of the power semiconductor device 40 under test; a second current monitoring device A2, a first end of the second current monitoring device A2 is electrically connected to the first end of the second voltage monitoring device V2, and a second end of the second current monitoring device A2 is electrically connected to the second end of the second voltage monitoring device V2.

[0065] The second monitoring branch includes a second voltage monitoring device V2 and a second current monitoring device A2. The second voltage monitoring device V2 is used to monitor the terminal voltage of the gate and cathode of the power semiconductor device under test; the second current monitoring device A2 is used to monitor the leakage current flowing through the gate and cathode of the power semiconductor device under test; the second voltage monitoring device V2 and the second current monitoring device A2 should have a variable frequency sampling function, that is, in the early stage of the test, the sampling frequency is high, and in the middle and late stages of the test, the test sampling frequency is appropriately reduced as needed.

[0066] In some embodiments, Figure 4 and Figure 5 As shown, the protection branch includes: a sixth switch device S6, a first end of the sixth switch device S6 is electrically connected to the anode of the power semiconductor device 40 under test, and a second end of the sixth switch device S6 is electrically connected to the cathode of the power semiconductor device 40 under test.

[0067] The anode and cathode of the power semiconductor device under test are short-circuited by the sixth switch device to protect the power semiconductor device under test.

[0068] The above-mentioned high-temperature blocking test circuit has high-temperature AC blocking, high-temperature DC blocking and high-temperature gate reverse bias test functions, which can simultaneously meet the high-temperature blocking screening and reliability testing of various thyristor devices such as IGCT, GTO and transistor devices such as IGBT, MOSFET, etc., can improve the efficiency of device screening and reliability testing, and is easy to implement in practical applications. It can remove some branches according to the test requirements of different devices, and has flexible adjustability.

[0069] In this embodiment, a high temperature blocking test device is also provided. Figure 6 As shown, it includes: any one of the above-mentioned high-temperature blocking test circuits 01, the above-mentioned high-temperature blocking test circuit 01 is electrically connected to the power semiconductor device 40 under test, and is used to perform a high-temperature blocking test on the above-mentioned power semiconductor device 40 under test; a heating device 02, connected to the above-mentioned power semiconductor device 40 under test, and is used to heat the above-mentioned power semiconductor device 40 under test.

[0070] The above-mentioned high-temperature blocking test device of the present application has high-temperature AC blocking, high-temperature DC blocking and high-temperature gate reverse bias test functions, which can simultaneously meet the high-temperature blocking screening and reliability testing of various thyristor devices such as IGCT, GTO and transistor devices such as IGBT, MOSFET, etc., can improve the efficiency of device screening and reliability testing, and is easy to implement in practical applications. It can remove some branches according to the testing requirements of different devices, and has flexible adjustability.

[0071] In this embodiment, a method for testing a power semiconductor device using any of the above-mentioned high temperature blocking test circuits is also provided. Figure 7 As shown, including:

[0072] Step S101, when the power semiconductor device under test is heated to a preset temperature, the grounding switch and the control switch of the AC voltage source branch are controlled to be closed, so as to adopt the AC voltage source branch to perform a high-temperature AC blocking test on the power semiconductor device under test, or the grounding switch and the control switch of the DC voltage source branch are controlled to be closed, so as to adopt the DC voltage source branch to perform a high-temperature DC blocking test on the power semiconductor device under test; or the grounding switch is controlled to be disconnected and the control switch of the gate voltage source branch is closed, so as to adopt the gate voltage source branch to perform a high-temperature gate reverse bias test on the power semiconductor device under test.

[0073] The above-mentioned test method of the present application, by controlling the closing and opening of different switching devices and connecting different voltage sources, realizes the screening and reliability testing of high-temperature AC blocking, high-temperature DC blocking and high-temperature gate reverse bias of the power semiconductor device under test, thereby solving the problem that the test circuits and test methods in the prior art cannot fully meet the requirements of high-temperature blocking failure screening and reliability testing of devices.

[0074] In some embodiments, the high temperature blocking test device stably heats the power semiconductor device under test to a preset temperature, and the preset temperature is equal to the maximum operating junction temperature T jmax Related, usually T jmax -5℃~T jmax .

[0075] In some embodiments, such as Figure 4 As shown, the AC voltage source branch includes an electrically connected AC voltage source AC, a first current limiting module 11, a first diode D1, a first switch device S1, a second diode D2 and a second switch device S2. When the power semiconductor device under test is heated to a preset temperature, the grounding switch S0 and the control switch of the AC voltage source branch are controlled to be closed, so as to use the AC voltage source branch to perform a high-temperature AC blocking test on the power semiconductor device under test, including: when the power semiconductor device under test is heated to a first preset temperature, the first switch device S1 and the grounding switch S0 are closed, the second switch device S2 is disconnected, and the DC voltage source branch and the gate voltage source branch are disconnected from the power semiconductor device under test, so as to use the AC voltage source branch to perform a forward half-wave high-temperature AC blocking test on the power semiconductor device under test. Screening and reliability testing; when the power semiconductor device under test is heated to a second preset temperature, the second switch device S2 and the grounding switch S0 are closed, the first switch device S1 is disconnected, and the DC voltage source branch and the gate voltage source branch are disconnected from the power semiconductor device under test, so as to use the AC voltage source branch to perform negative half-wave high-temperature AC blocking screening and reliability testing on the power semiconductor device under test; when the power semiconductor device under test is heated to a third preset temperature, the first switch device S1, the second switch device S2 and the grounding switch S0 are closed, and the DC voltage source branch and the gate voltage source branch are disconnected from the power semiconductor device under test, so as to use the AC voltage source branch to perform high-temperature full-wave AC blocking screening and reliability testing on the power semiconductor device under test.

[0076] This embodiment also provides a method for testing high temperature blocking of a power semiconductor device using the following technical solution:

[0077] like Figure 4 As shown, the power semiconductor device under test is heated to a specified temperature by a heating device, S1 and S0 are closed, and S2, S4, S5, and S6 are disconnected, so that high-temperature AC blocking screening and reliability testing of the positive half-wave can be achieved; S2 and S0 are closed, and S1, S4, S5, and S6 are disconnected, so that high-temperature AC blocking screening and reliability testing of the negative half-wave can be achieved.

[0078] Preferably, Figure 5 As shown, by closing S0 and S3 and opening S4, S5, and S6, high-temperature AC blocking screening and reliability testing under a full-wave rectification waveform can be achieved.

[0079] like Figure 4 As shown, the power semiconductor device under test is heated to a specified temperature by a heating device, S1, S2, S0 are closed, and S4, S5, S6 are opened, so that high-temperature full-wave AC blocking screening and reliability testing can be achieved;

[0080] The power semiconductor device under test is heated to the specified temperature by the heating device, S4 and S0 are closed, and S1, S2, S5 and S6 are opened, so that high-temperature DC blocking screening and reliability testing can be realized;

[0081] The power semiconductor device under test is heated to the specified temperature by the heating device, S5 is closed, and S1, S2, S4, S0, and S6 are opened, so that high-temperature gate reverse bias screening and reliability testing can be realized;

[0082] Close S0 and S6, and open S1, S2, S4, and S5 to provide short-circuit protection for the power semiconductor device under test after the test is completed.

[0083] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0084] like Figure 2 As shown, a high temperature blocking test circuit for a power semiconductor device includes a power semiconductor device 40 to be tested, an AC voltage source branch 10, a DC voltage source branch 20, a gate voltage source branch 30, a first monitoring branch 50, a second monitoring branch 60, and a protection branch 70.

[0085] The first embodiment in this application is Figure 4 The power semiconductor device under test is heated to a specified temperature by the above-mentioned heating device. When the maximum operating junction temperature T jmaxWhen the voltage is 125℃, the specified temperature should be 120℃~125℃, S0 is closed, the gate cathode of the power semiconductor device under test is short-circuited, S2, S4, S5, S6 are disconnected, S1 is closed, and the AC voltage source AC provides a 50Hz or 60Hz sine wave voltage. When the rated repetitive peak voltage of the power semiconductor device under test is 4.5kV, the voltage output capacity of the AC voltage source AC is recommended to be above 5.4kV, and the first diode D1 and the first switch device S1 (the withstand voltage of the first diode D1 and the first switch device S1 should be above 5.4kV) are passed to output a positive sine half-wave voltage, and the voltage is applied to the anode and cathode of the power semiconductor device under test, and the terminal voltage of the anode and cathode of the power semiconductor device under test and the leakage current flowing through the anode and cathode of the power semiconductor device under test are monitored by the voltage monitoring device V1 and the current monitoring device A1. The test circuit can be used for high-temperature AC blocking screening and reliability testing of the forward half-wave of power semiconductor devices.

[0086] The power semiconductor device under test is heated to a specified temperature by a heating device, S0 is closed, the gate cathode of the power semiconductor device under test is short-circuited, S1, S4, S5, S6 are disconnected, S2 is closed, and the AC voltage source AC provides a 50Hz or 60Hz sine wave voltage, which is output through the second diode D2 and the second switch device S2 to output a negative sine half-wave voltage, and the voltage is applied to the anode and cathode of the power semiconductor device under test, and the terminal voltage of the anode and cathode of the power semiconductor device under test and the leakage current flowing through the anode and cathode of the power semiconductor device under test are monitored by the voltage monitoring device V1 and the current monitoring device A1. The test circuit can be used for high-temperature AC blocking screening and reliability testing of the negative half-wave of power semiconductor devices.

[0087] The power semiconductor device under test is heated to a specified temperature by a heating device, S0 is closed, the gate cathode of the power semiconductor device under test is short-circuited, S4, S5, S6 are disconnected, S1, S2 are closed, and the AC voltage source AC provides a 50Hz or 60Hz sine wave voltage, which is output through the first diode D1, the first switch device S1, the second diode D2, and the second switch device S2, and the voltage is applied to the anode and cathode of the power semiconductor device under test. The terminal voltage of the anode and cathode of the power semiconductor device under test and the leakage current flowing through the anode and cathode of the power semiconductor device under test are monitored by the voltage monitoring device V1 and the current monitoring device A1. The test circuit can be used for high-temperature full-wave AC blocking screening and reliability testing of power semiconductor devices.

[0088] The power semiconductor device under test is heated to a specified temperature by a heating device, S0 is closed, the gate cathode of the power semiconductor device under test is short-circuited, S1, S2, S5, S6 are disconnected, S4 is closed, the DC voltage source DC provides a DC voltage, and applies the voltage to the anode and cathode of the power semiconductor device under test, and the terminal voltage of the anode and cathode of the power semiconductor device under test and the leakage current flowing through the anode and cathode of the power semiconductor device under test are monitored by the voltage monitoring device V1 and the current monitoring device A1. The test circuit can be used for high-temperature DC blocking screening and reliability testing of power semiconductor devices.

[0089] The power semiconductor device under test is heated to the specified temperature by the heating device, S1, S2, S4, S0, S6 are disconnected, S5 is closed, the voltage source G provides a DC reverse bias voltage, and the voltage is applied to the gate and cathode of the power semiconductor device under test, and the terminal voltage of the gate and cathode of the power semiconductor device under test and the leakage current flowing through the gate cathode of the power semiconductor device under test are monitored by the voltage monitoring device V2 and the current monitoring device A2. The test circuit can be used for high-temperature gate reverse bias screening and reliability testing of power semiconductor devices.

[0090] After completing the device test, disconnect S1, S2, S4, and S5, close S0 and S6, and short-circuit the gate cathode and anode cathode of the tested power semiconductor device for protection.

[0091] Another embodiment of the present application is Figure 5 As shown, the AC voltage source branch may include an AC voltage source AC, a first current limiting resistor R1, a third diode D3, a fourth diode D4, a fifth diode D5, a sixth diode D6 and a third switch device S3. The power semiconductor device under test is heated to a specified temperature by a heating device, S0 is closed to short-circuit the gate cathode of the power semiconductor device under test, S4, S5, S6 are disconnected, S3 is closed, and the AC voltage source AC provides a 50Hz or 60Hz sine wave voltage, which passes through a diode rectifier bridge composed of the third diode D3, the fourth diode D4, the fifth diode D5, and the sixth diode D6, and the third switch device S3, outputs a full-wave rectified voltage, and applies the voltage to the anode and cathode of the power semiconductor device under test, and monitors the terminal voltage of the anode and cathode of the power semiconductor device under test and the leakage current flowing through the anode and cathode of the power semiconductor device under test through a voltage monitoring device V1 and a current monitoring device A1. The test circuit can be used for high-temperature AC blocking screening and reliability testing under a full-wave rectified waveform of power semiconductor devices, and can increase the test efficiency by 1 times.

[0092] Before conducting high temperature blocking screening and reliability testing on the above-mentioned power semiconductor devices, the basic electrical parameters of the devices should be tested to ensure that the device characteristics are good. Taking IGCT or thyristor as an example, the test items should at least include the device on-state voltage drop V TM, off-state repetitive peak current I DRM And the reverse repetitive peak current I RRM .

[0093] After completing the high temperature blocking screening and reliability test of the above-mentioned power semiconductor devices under test, the basic electrical parameters of the devices should be retested to determine whether the devices have passed the screening or reliability test. Taking IGCT or thyristor as an example, the judgment standard is V TM ,≤1.1USL,I DRM ≤2USL and I RRM ≤2USL, USL is the upper limit of the corresponding parameter, and USL is determined by the characteristics of the power semiconductor device under test. If the power semiconductor device under test meets the above judgment criteria, the device is judged to have passed the screening or reliability test. If the power semiconductor device under test does not meet the above judgment criteria, the device is judged to have failed.

[0094] Preferably, the above-mentioned heating device can add a humidity control function to adjust the humidity of the environment in which the power semiconductor device under test is located. When the environment in which the power semiconductor device under test is located has both high temperature and high humidity, the above-mentioned circuit can be used for high temperature and high humidity reverse bias screening and reliability testing of the power semiconductor device under test.

[0095] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0096] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0097] 1) The above-mentioned high-temperature blocking test circuit of the present application includes an electrically connected AC voltage source branch, a DC voltage source branch, a gate voltage source branch and a grounding switch. When the control switches of the grounding switch and the AC voltage source branch are closed, the AC voltage source branch is used to perform a high-temperature AC blocking test on the power semiconductor device under test; when the control switches of the grounding switch and the DC voltage source branch are closed, the DC voltage source branch is used to perform a high-temperature DC blocking test on the power semiconductor device under test; when the grounding switch is disconnected and the control switch of the gate voltage source branch is closed, the gate voltage source branch is used to perform a high-temperature gate reverse bias test on the power semiconductor device under test. The circuit controls the access of different voltage sources to achieve the screening and reliability testing of high-temperature AC blocking, high-temperature DC blocking and high-temperature gate reverse bias of the power semiconductor device under test, solving the problem that the test circuits and test methods in the prior art cannot fully meet the requirements of device high-temperature blocking failure screening and reliability testing.

[0098] 2) The above-mentioned high-temperature blocking test device of the present application has high-temperature AC blocking, high-temperature DC blocking and high-temperature gate reverse bias test functions, which can simultaneously meet the high-temperature blocking screening and reliability testing of various thyristor devices such as IGCT, GTO and transistor devices such as IGBT and MOSFET, etc., which can improve the efficiency of device screening and reliability testing, and is easy to implement in practical applications. It can remove some branches according to the test requirements of different devices, and has flexible adjustability.

[0099] 3) The above-mentioned test method of the present application, by controlling the closing and opening of different switching devices and connecting different voltage sources, realizes the screening and reliability testing of high-temperature AC blocking, high-temperature DC blocking and high-temperature gate reverse bias of the power semiconductor device under test, thereby solving the problem that the test circuits and test methods in the prior art cannot fully meet the requirements of high-temperature blocking failure screening and reliability testing of the device.

[0100] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A high temperature blocking test circuit, characterized in that: comprising an AC voltage source branch, a DC voltage source branch, a gate voltage source branch and a grounding switch which are electrically connected, Wherein, a first end of the grounding switch is electrically connected to the gate of the power semiconductor device under test, a second end of the grounding switch is grounded, and the AC voltage source branch, the DC voltage source branch and the gate voltage source branch all include a control switch; When the grounding switch and the control switch of the AC voltage source branch are both closed, the AC voltage source branch is used to perform a high temperature AC blocking test on the power semiconductor device under test; When the grounding switch and the control switch of the DC voltage source branch are both closed, the DC voltage source branch is used to perform a high temperature DC blocking test on the power semiconductor device under test; When the grounding switch is disconnected and the control switch of the gate voltage source branch is closed, the gate voltage source branch is used to perform a high-temperature gate reverse bias test on the power semiconductor device under test.

2. The high temperature blocking test circuit according to claim 1, characterized in that: The AC voltage source branch comprises: AC voltage source; A first current limiting module, wherein a first end of the first current limiting module is electrically connected to a first end of the AC voltage source; A rectifier circuit, wherein the first end of the rectifier circuit is electrically connected to the second end of the first current limiting module, the second end of the rectifier circuit is electrically connected to the anode of the power semiconductor device under test, and the rectifier circuit includes a control switch of the AC voltage source branch.

3. The high temperature blocking test circuit according to claim 2, characterized in that: The control switch of the AC voltage source branch is a first switch device and a second switch device, the second end of the AC voltage source is electrically connected to the cathode of the power semiconductor device under test, and the rectifier circuit includes: a first diode, wherein an anode of the first diode is electrically connected to a second end of the first current limiting module; The first switch device, wherein a first end of the first switch device is electrically connected to the cathode of the first diode, and a second end of the first switch device is electrically connected to the anode of the power semiconductor device under test; a second diode, wherein a cathode of the second diode is electrically connected to a second end of the first current limiting module; The second switch device, the first end of the second switch device is electrically connected to the anode of the second diode, and the second end of the second switch device is electrically connected to the anode of the power semiconductor device under test.

4. The high temperature blocking test circuit according to claim 2, characterized in that: The control switch of the AC voltage source branch is a third switch device, and the rectifier circuit includes: A diode rectifier bridge structure, wherein the diode rectifier bridge structure is composed of a third diode, a fourth diode, a fifth diode and a sixth diode, wherein the cathode of the third diode and the anode of the fourth diode are both electrically connected to the second end of the first current limiting module, the cathode of the fifth diode and the anode of the sixth diode are both electrically connected to the second end of the AC voltage source, and the anode of the third diode and the anode of the fifth diode are both electrically connected to the cathode of the power semiconductor device under test; The third switch device, the first end of the third switch device is electrically connected to the cathode of the fourth diode and the cathode of the sixth diode respectively, and the second end of the third switch device is electrically connected to the anode of the power semiconductor device under test.

5. The high temperature blocking test circuit according to claim 1, characterized in that: The control switch of the DC voltage source branch is a fourth switch device, and the DC voltage source branch includes: A DC voltage source, a first end of which is electrically connected to the AC voltage source branch and the cathode of the power semiconductor device under test respectively; A second current limiting module, wherein a first end of the second current limiting module is electrically connected to a second end of the DC voltage source; The fourth switch device, the first end of the fourth switch device is electrically connected to the second end of the second current limiting module, and the second end of the fourth switch device is electrically connected to the AC voltage source branch and the anode of the power semiconductor device under test respectively.

6. The high temperature blocking test circuit according to claim 1, characterized in that: The control switch of the gate voltage source branch is a fifth switch device, and the gate voltage source branch includes: A gate voltage source, a first end of which is electrically connected to a cathode of the power semiconductor device under test; The fifth switching device, the first end of the fifth switching device is electrically connected to the second end of the gate voltage source, and the second end of the fifth switching device is electrically connected to the gate of the power semiconductor device under test.

7. The high temperature blocking test circuit according to claim 1, characterized in that: The high temperature blocking test circuit also includes: a first monitoring branch, wherein a first end of the first monitoring branch is electrically connected to an anode of the power semiconductor device under test, a second end of the first monitoring branch is electrically connected to a cathode of the power semiconductor device under test, and the first monitoring branch is used to monitor a terminal voltage and / or a leakage current between an anode and a cathode of the power semiconductor device under test; a second monitoring branch, wherein a first end of the second monitoring branch is electrically connected to the gate of the power semiconductor device under test, a second end of the second monitoring branch is electrically connected to the cathode of the power semiconductor device under test, and the second monitoring branch is used to monitor the terminal voltage and / or leakage current between the gate and cathode of the power semiconductor device under test; A protection branch, wherein a first end of the protection branch is electrically connected to an anode of the power semiconductor device under test, and a second end of the protection branch is electrically connected to a cathode of the power semiconductor device under test.

8. The high temperature blocking test circuit according to claim 7, characterized in that: The first monitoring branch comprises: a first voltage monitoring device, wherein a first end of the first voltage monitoring device is electrically connected to an anode of the power semiconductor device under test, and a second end of the first voltage monitoring device is electrically connected to a cathode of the power semiconductor device under test; A first current monitoring device, wherein a first end of the first current monitoring device is electrically connected to a second end of the first voltage monitoring device, and a second end of the first current monitoring device is electrically connected to the AC voltage source branch and the DC voltage source branch respectively.

9. The high temperature blocking test circuit according to claim 7, characterized in that: The second monitoring branch comprises: a second voltage monitoring device, wherein a first terminal of the second voltage monitoring device is electrically connected to the gate of the power semiconductor device under test, and a second terminal of the second voltage monitoring device is electrically connected to the cathode of the power semiconductor device under test; A second current monitoring device, wherein a first end of the second current monitoring device is electrically connected to a first end of the second voltage monitoring device, and a second end of the second current monitoring device is electrically connected to a second end of the second voltage monitoring device.

10. The high temperature blocking test circuit according to claim 7, characterized in that: The protection branch includes: A sixth switch device, wherein a first end of the sixth switch device is electrically connected to an anode of the power semiconductor device under test, and a second end of the sixth switch device is electrically connected to a cathode of the power semiconductor device under test.

11. A high temperature blocking test device, characterized in that: include: The high temperature blocking test circuit according to any one of claims 1 to 10, wherein the high temperature blocking test circuit is electrically connected to a power semiconductor device under test and is used to perform a high temperature blocking test on the power semiconductor device under test; A heating device is connected to the power semiconductor device under test and is used to heat the power semiconductor device under test.

12. A method for testing a power semiconductor device using the high temperature blocking test circuit according to any one of claims 1 to 10, characterized in that: include: When the power semiconductor device under test is heated to a preset temperature, the grounding switch and the control switch of the AC voltage source branch are controlled to be closed, so as to adopt the AC voltage source branch to perform a high-temperature AC blocking test on the power semiconductor device under test, or the grounding switch and the control switch of the DC voltage source branch are controlled to be closed, so as to adopt the DC voltage source branch to perform a high-temperature DC blocking test on the power semiconductor device under test; or the grounding switch is controlled to be disconnected and the control switch of the gate voltage source branch is closed, so as to adopt the gate voltage source branch to perform a high-temperature gate reverse bias test on the power semiconductor device under test.

13. The method according to claim 12, characterized in that The AC voltage source branch includes an electrically connected AC voltage source, a first current limiting module, a first diode, a first switch device, a second diode and a second switch device. When the power semiconductor device under test is heated to a preset temperature, the ground switch and the control switch of the AC voltage source branch are controlled to be closed, so as to use the AC voltage source branch to perform a high temperature AC blocking test on the power semiconductor device under test, including: When the power semiconductor device under test is heated to a first preset temperature, the first switch device and the grounding switch are closed, the second switch device is disconnected, and the connection between the DC voltage source branch and the gate voltage source branch and the power semiconductor device under test is disconnected, so as to perform a forward half-wave high-temperature AC blocking screening and reliability test on the power semiconductor device under test using the AC voltage source branch; When the power semiconductor device under test is heated to a second preset temperature, the second switch device and the grounding switch are closed, the first switch device is disconnected, and the connection between the DC voltage source branch and the gate voltage source branch and the power semiconductor device under test is disconnected, so as to perform negative half-wave high-temperature AC blocking screening and reliability testing on the power semiconductor device under test using the AC voltage source branch; When the power semiconductor device under test is heated to a third preset temperature, the first switch device, the second switch device and the grounding switch are closed, and the DC voltage source branch and the gate voltage source branch are disconnected from the power semiconductor device under test, so that the AC voltage source branch is used to perform high-temperature full-wave AC blocking screening and reliability testing on the power semiconductor device under test.

14. The method according to claim 12, characterized in that The preset temperature is related to the maximum operating junction temperature of the power semiconductor device under test.

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