High-adhesion positive KrF photoresist resin composition

Abstract

The invention discloses a high-adhesion positive KrF (KrF) photoresist resin composition. The composition comprises the following components in parts by weight: 1000 parts of KrF photoresist resin, 1 to 20 parts of a photoacid generator, 6 to 100 parts of an additive, 500 to 800 parts of an organic solvent, and 2 to 50 parts of a fluorine-containing ester compound. A nitrile group structure is introduced into a resin structure, the acting force between the resin and the surface of a base material can be increased, the adhesiveness is improved, and nitrile groups are different from a silane coupling agent and cannot form chemical bonds with molecules on the surface of the base material. Therefore, the film can be easily removed in the developing process, and no residue is generated. Besides, the fluorine-containing ester compound generally has lower surface energy, so that the photoresist is easier to unfold and form a uniform film in the coating process, and the defects are reduced. The photoresist prepared by using the KrF photoresist resin disclosed by the invention has excellent adhesiveness, the photoresist in an exposure area is not left, photoetching pattern defects are reduced, and the product yield is improved.

Description

Technical Field

[0001] The invention belongs to the technical field of photoresists and relates to a high-adhesion positive KrF photoresist resin composition. Background Art

[0002] Photoresist, also known as photoresist, is a key material widely used in fine-grained processing operations such as integrated circuits, flat-panel displays and semiconductor manufacturing. Among them, the production technology of photoresist used in the field of semiconductor manufacturing is the most complex and has a high technical threshold. With the rapid development of semiconductor manufacturing technology, semiconductor integrated circuits are increasingly pursuing small size and high integration, and the most direct and effective way is to reduce the characteristic line width of the integrated circuit, that is, the characteristic dimension (CD).

[0003] Chemically amplified (CA) photoresists are considered to be the basic platform for bringing semiconductor technology to the 90nm node and beyond. The current mainstream chemically amplified photoresists include four categories: g-line, i-line, KrF and ArF photoresists. They must not only minimize the size of graphic features, but their performance, such as resolution, chemical stability, adhesion, transparency, etc., is also crucial to ensure high-precision and high-reliability photolithography processes. Patent application CN1828418A and patent application CN104965389A both use silane coupling agents, which will chemically react with the surface of the substrate to generate stable silicon-oxygen bonds. In the exposure area, the silicon-oxygen bonds formed by the silane coupling agent and the surface of the substrate will increase the adhesion of the photoresist, and the effect is obvious. However, in the non-exposure area, the silane coupling agent will also chemically react with the surface of the substrate to form silicon-oxygen bonds. Therefore, during the development process, residues will inevitably be generated on the surface of the substrate, which cannot be removed, causing defects in the photolithography pattern and affecting the product yield. Summary of the invention

[0004] In view of the above problems existing in the prior art, the present invention provides a high-adhesion positive KrF photoresist resin composition, which introduces a nitrile structure and uses a fluorinated ester compound in combination to make it have excellent adhesion. There is no photoresist residue in the exposure area, which reduces the defects of the lithography pattern and improves the product yield.

[0005] In order to achieve the above invention object, the technical solution of the present invention is as follows:

[0006] The present invention provides a high-adhesion positive KrF photoresist resin composition, comprising the following components in parts by weight:

[0007] KrF photoresist resin, 1000 parts,

[0008] Photoacid generator, 1-20 parts,

[0009] Additives, 6-100 parts,

[0010] Organic solvent, 500-800 parts,

[0011] Fluorinated ester compounds, 2-50 parts.

[0012] Specifically, in the above-mentioned high adhesion positive KrF photoresist resin composition, the KrF photoresist resin is 1000 parts; the photoacid generator can be 1 part, 3 parts, 5 parts, 8 parts, 10 parts, 12 parts, 15 parts, 18 parts, 20 parts, etc.; the additive can be 6 parts, 10 parts, 20 parts, 30 parts, 40 parts, 50 parts, 60 parts, 80 parts, 100 parts, etc.; the organic solvent can be 500 parts, 550 parts, 600 parts, 650 parts, 700 parts, 750 parts, 800 parts, etc.; the fluorine-containing ester compound can be 2 parts, 5 parts, 10 parts, 15 parts, 20 parts, 25 parts, 30 parts, 35 parts, 40 parts, 45 parts, 50 parts, etc.

[0013] As a preferred embodiment of the present invention, the KrF photoresist resin has a structure as shown in the following formula (1):

[0014]

[0015] In the formula, R 1 , R 3 R is independently H atom, alkyl or alkoxy with 1 to 6 carbon atoms; 2 is a nitrile-containing structure; 0<x<1, 0<y<1, 0<z<1, and x+y+z=1; R 1 , R 3 They can be the same or different. x, y, and z represent the ratios of different types of monomers in the KrF photoresist resin. According to different application scenario requirements, the ratios between monomers can be easily adjusted to achieve higher application flexibility.

[0016] Preferably, R 1 is hydroxyl group;

[0017] Preferably, R 3 It is a low activation energy deprotection acidic group, including at least any one of the groups shown in the following structures:

[0018] The curved lines in the structural formula represent connecting bonds;

[0019] Preferably, R 2 It is a nitrile group-containing structure derived from at least one of the nitrile group monomers having the following structure:

[0020]

[0021] Among them, R 4Each is independently a H atom or a methyl group (-CH 3 );R 5 , R 6 are independently an alkylene group having 1 to 10 carbon atoms (i.e., -C n H 2n -, n is an integer of 1-10), preferably methylene.

[0022] Preferably, the weight average molecular weight of the KrF photoresist resin is 1000-100000; more preferably, the weight average molecular weight of the KrF photoresist resin is 2000-50000. Considering the performance of the final photoresist such as resolution, the weight average molecular weight is 2000-50000. Too high a weight average molecular weight will lead to insufficient photosensitivity, while too low a weight average molecular weight will lead to insufficient alkali resistance and poor heat resistance of the cured film.

[0023] The KrF photoresist resin having the structure of formula (1) of the present invention is an existing product that has been disclosed. The present invention has no special requirements for its source. It can be a common commercially available product obtained through commercial channels, or it can be prepared by technicians based on existing processes. For example, it can be prepared by the method disclosed in reference patent CN115725015A: raw materials including 4-acetoxystyrene, monomer compounds and initiators are mixed to carry out a first reaction; then ammonium acetate-water suspension is added to the system to carry out a second reaction to obtain the KrF resin. The actual operation and reaction conditions can be optimized by technicians based on known processes according to actual needs, and the present invention will not repeat them.

[0024] As a preferred embodiment of the present invention, the photoacid generator can be a conventional type selected in the field, preferably one or more of triphenylsulfonium perfluorobutanesulfonate, sulfonium salts and derivatives thereof, iodonium salts and derivatives thereof, oxime esters, organic halogen compounds, diazosulfonium and imide sulfonate, more preferably one or more of triphenylsulfonium perfluorobutanesulfonate, sulfonium salt (SPI), triphenylsulfonium camphorsulfonate, iodonium salt (IPI), 4,4'-dimethyldiphenyliodonium hexafluorophosphate.

[0025] As a preferred embodiment of the present invention, adding the additive is a conventional operation method in the field. The additive is selected from at least one of a leveling agent, an acid quencher and an acid diffusion inhibitor. The specific type can be conventionally selected in the field. The present invention has no special requirements. For example,

[0026] The leveling agent can be a fluorine-containing surfactant (brand F563, manufacturer: Japan DIC Corporation);

[0027] The acid quencher may be tetrabutylammonium hydroxide (TBAH);

[0028] The acid diffusion inhibitor may be triethylamine.

[0029] Preferably, based on 6-100 parts of additives, the leveling agent is 2-20 parts, the acid quencher is 0-10 parts, and the acid diffusion inhibitor is 80-95 parts.

[0030] As a preferred embodiment of the present invention, adding an organic solvent is a conventional operation method in the field. The organic solvent can be a solvent for dissolving each component in the KrF photoresist resin composition, and can be a single solvent or a combination of two or more solvents. The organic solvent includes one or more of ethers, esters, ketones or hydroxyl-containing solvents, preferably one or more of propylene glycol methyl ether acetate, cyclopentanone, cyclohexanone, ethyl lactate, butyl acetate, 2-ethoxyethanol and 3-ethoxyethyl propionate, propylene glycol monomethyl ether, propylene glycol monoacetate, propylene glycol monoethyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol methyl ethyl ether, neopentyl acetate, methyl ethyl ketone, methyl isobutyl ketone, diacetone alcohol, γ-butyrolactone, ethyl acetate, ethylene glycol monomethyl ether, and ethylene glycol monomethyl ether acetate.

[0031] As a preferred embodiment of the present invention, the thermal decomposition temperature of the fluorinated ester compound is 100-350°C, preferably 120-260°C. In order to ensure the stability of the components of the photosensitive resin composition during the heating and drying process, the thermal decomposition temperature of the fluorinated ester compound is preferably above 100°C, more preferably above 120°C. In order to fully decompose in the heat treatment process after development, the thermal decomposition temperature of the fluorinated ester compound is preferably below 350°C, more preferably below 260°C.

[0032] Specifically, the fluorine-containing ester compound can be cited but not limited to the following compounds: ethyl 2,2,2-trifluoroacetate, 4-fluorophenyl acetate, dimethyl 2-fluoromalonate, methyl 2-(trifluoromethyl)benzoate, ethyl 2-fluoropropionate, diethyl 2,2-difluoromalonate, ethyl 4,4-difluoroacetoacetate, trifluoroethyl methacrylate, methyl p-fluorobenzoate, ethyl p-fluorobenzoate, isopropyl perfluorovalerate. From the aspect of reducing sulfur content, the fluorine-containing ester compound does not contain sulfur-containing groups such as sulfonic acid and sulfonic acid ester. Further, the fluorine-containing ester compound that does not contain chlorine is preferred, so as to reduce the introduction of chlorine that is not conducive to the application of the cured film.

[0033] The high-adhesion positive KrF photoresist resin composition provided by the present invention can be prepared by conventional methods in the field of material blending, and specifically, the composition is prepared by mixing the components in the above formula.

[0034] Compared with the prior art, the present invention has the following beneficial effects:

[0035] The KrF photoresist resin of the present invention adds a monomer containing a nitrile group during the preparation process. Since the nitrile group is a strong polar structure, in the resin, the strong polar structure and the non-polar structure are used in combination, which can simultaneously improve the resolution of the photoresist, reduce the line edge roughness, improve the adhesion of the resin, and improve the overall performance of the photoresist. The introduction of the nitrile group structure can increase the force between the resin and the substrate surface, increase the adhesion, and the nitrile group is different from the silane coupling agent and will not form a chemical bond with the substrate surface molecule. Therefore, it can be easily removed during the development process without residue. In addition, fluorinated ester compounds usually have a lower surface energy, which helps the photoresist to be more easily unfolded and form a uniform film during the coating process, thereby reducing defects. Therefore, the photoresist prepared using the KrF photoresist resin of the present invention has excellent adhesion, the photoresist in the exposure area has no residue, the photolithography pattern defects are reduced, the product yield is improved, and it can be applied to fine pattern processing operations such as integrated circuits, flat panel displays and semiconductor manufacturing. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 The photoresist pattern after exposure and development in Example 4;

[0037] Figure 2 This is the photoresist pattern of comparative example 2 after exposure and development. DETAILED DESCRIPTION

[0038] In order to facilitate the understanding of the present invention, the present invention will be further described below in conjunction with examples. It should be understood that the following examples are only for a better understanding of the present invention and do not mean that the present invention is limited to the following examples.

[0039] Unless otherwise defined, all technical and scientific terms used herein have the same meanings as those commonly understood by those skilled in the art to which the present invention belongs. Unless otherwise specified, the reagents, materials and instruments used in the following examples are conventional reagents, conventional materials and conventional instruments in the art and can be obtained commercially.

[0040] Leveling agent (fluorinated surfactant): brand F563, DIC Corporation of Japan;

[0041] 4-Fluorophenyl acetate: Aladdin Company;

[0042] Perfluorobutanesulfonic acid triphenylsulfonium salt: Shanghai Yuanye Biotechnology Co., Ltd.;

[0043] Triphenylsulfonium camphorsulfonate: Wuhan Shuer Biotechnology Co., Ltd.;

[0044] 4,4'-Dimethyldiphenyliodonium hexafluorophosphate: Hubei Maidehao Biotechnology Co., Ltd.

[0045] Synthesis example

[0046] The synthesis of KrF photoresist resins A1-A3 of formula (1) is prepared by referring to the method disclosed in patent CN115725015A. The specific steps are as follows:

[0047] KrF photoresist resin A1: Weigh 25 g of p-acetoxystyrene, 7.92 g of acrylonitrile, 39.6 g of ethyl acetate, and 9.36 g of 1-ethylcyclopentyl methacrylate respectively, add them into a 250 ml three-necked flask under a nitrogen environment, then add 120 g of tetrahydrofuran to dissolve, and introduce nitrogen bubbling for deoxygenation for half an hour under stirring; weigh 3.28 g of dimethyl azobisisobutyrate (AIBME), dissolve it in 12 g of acetonitrile, then slowly add the AIBME / acetonitrile solution dropwise into the solution in the three-necked flask, and reflux for 24 hours after the addition is complete.

[0048] Weigh 23.76g of ammonium acetate, add 6g of deionized water, slowly drop the ammonium acetate / water suspension into the above reaction solution, and stir and react for 18 hours at room temperature under nitrogen protection. After the reaction is completed, pour the reaction solution into 1000g of deionized water and stir and precipitate for 2 hours, filter, wash the precipitated resin with a large amount of deionized water, and vacuum dry at 50°C to obtain 30.3g of white solid resin sample with a yield of 86%, Mw: 11000, recorded as KrF photoresist resin A1. The structural formula of A1 is:

[0049]

[0050] KrF photoresist resin A2: The above raw material 1-ethylcyclopentyl methacrylate was replaced with 11.2 g of 1-ethylcycloheptyl methacrylate, and then prepared according to the method of KrF photoresist resin A1. The structural formula of A2 is:

[0051]

[0052] KrF photoresist resin A3: The above raw material 1-ethylcyclopentyl methacrylate was replaced with 6.4 g of tert-butyl acrylate, and then prepared according to the method of KrF photoresist resin A1. The structural formula of A3 is:

[0053]

[0054] Comparative Synthesis Example

[0055] Synthesis of KrF photoresist resin A1-1 (without adding nitrile monomer)

[0056] It was prepared according to the method of the above-mentioned KrF photoresist resin A1, except that the above-mentioned raw material acrylonitrile was not added, and was recorded as KrF photoresist resin A1-1.

[0057] [Example 1]

[0058] A high adhesion positive KrF photoresist resin composition was prepared according to the following formula:

[0059] KrF photoresist resin A1, 1000g,

[0060] Photoacid generator (triphenylsulfonium perfluorobutanesulfonate), 10g,

[0061] Additives (F563 surfactant 2.4g, tetrabutylammonium hydroxide 0.6g, triethylamine 25g), 28g,

[0062] Fluorinated ester compound (2-fluorophenyl acetate), 8g,

[0063] Organic solvent (propylene glycol methyl ether acetate), 600g.

[0064] [Example 2]

[0065] A high adhesion positive KrF photoresist resin composition was prepared according to the following formula:

[0066] KrF photoresist resin A2, 1000g,

[0067] Photoacid generator (triphenylsulfonium perfluorobutanesulfonate), 10g,

[0068] Additives (F563 surfactant 1.2g, tetrabutylammonium hydroxide 0.6g, triethylamine 5g), 6.8g,

[0069] Fluorinated ester compounds (ethyl p-fluorobenzoate), 2g,

[0070] Organic solvent (ethyl lactate), 600 g.

[0071] [Example 3]

[0072] A high adhesion positive KrF photoresist resin composition was prepared according to the following formula:

[0073] KrF photoresist resin A3, 1000g,

[0074] Photoacid generator (triphenylsulfonium camphorsulfonate), 20g,

[0075] Additives (F563 surfactant 4.8g, tetrabutylammonium hydroxide 0.6g, triethylamine 25g), 30.4g,

[0076] Fluorinated ester compound (trifluoroethyl methacrylate), 16g,

[0077] Organic solvent (propylene glycol monomethyl ether 300g and γ-butyrolactone 300g), 600g.

[0078] [Example 4]

[0079] A high adhesion positive KrF photoresist resin composition was prepared according to the following formula:

[0080] KrF photoresist resin A1, 1000g,

[0081] Photoacid generator (triphenylsulfonium camphorsulfonate), 20g,

[0082] Additives (F563 surfactant 2.4g, tetrabutylammonium hydroxide 0.6g, triethylamine 40g), 43g,

[0083] Fluorinated ester compounds (ethyl p-fluorobenzoate), 16g,

[0084] Organic solvent (methyl isobutyl ketone 450g and ethyl acetate 150g), 600g.

[0085] [Example 5]

[0086] A high adhesion positive KrF photoresist resin composition was prepared according to the following formula:

[0087] KrF photoresist resin A2, 1000g,

[0088] Photoacid generator (4,4'-dimethyldiphenyliodonium hexafluorophosphate), 10g,

[0089] Additives (F563 surfactant 2.4g, tetrabutylammonium hydroxide 0.2g, triethylamine 25g), 27.6g,

[0090] Fluorinated ester compounds (methyl p-fluorobenzoate), 8g,

[0091] Organic solvent (propylene glycol monoacetate 450g and butyl acetate 150g), 600g.

[0092] [Example 6]

[0093] A high adhesion positive KrF photoresist resin composition was prepared according to the following formula:

[0094] KrF photoresist resin A3, 1000g,

[0095] Photoacid generator (4,4'-dimethyldiphenyliodonium hexafluorophosphate), 20g,

[0096] Additives (F563 surfactant 2.4g, tetrabutylammonium hydroxide 1.8g, triethylamine 10g), 14.2g,

[0097] Fluorinated ester compound (diethyl 2,2-difluoromalonate), 8g,

[0098] Organic solvent (ethylene glycol monomethyl ether 450g and ethylene glycol monomethyl ether acetate 150g), 600g.

[0099] [Comparative Example 1]

[0100] A positive KrF photoresist resin composition was prepared according to the formula in Example 4, except that ethyl p-fluorobenzoate was not contained in the raw materials, and other conditions remained unchanged.

[0101] [Comparative Example 2]

[0102] A positive KrF photoresist resin composition was prepared according to the formula in Example 4, except that the KrF photoresist resin A1 in the raw material was replaced with an equal amount of KrF photoresist resin A1-1, and other conditions remained unchanged.

[0103] The positive KrF photoresist resin compositions provided in the above examples and comparative examples were respectively used to prepare cured films, and performance tests were performed according to the following methods. The test results are shown in Table 1:

[0104] Preparation method of cured film:

[0105] The raw materials of the highly transparent positive KrF photoresist resin composition are mixed, coated on a high-flatness glass by spin coating, and dried on a hot plate at 120°C for 2 minutes to obtain a film with a thickness of about 5 μm. The film is transferred to a sealed oven and nitrogen is introduced for gas replacement. When the oxygen content drops to 100 ppm, the oven is heated to 250°C and kept at a constant temperature for 1 hour. After that, the oven is cooled naturally. After cooling to below 100°C, the oven is opened and the cured film with glass as the substrate is taken out.

[0106] Performance test methods for cured films:

[0107] (1) Film loss and photosensitivity evaluation

[0108] The film was exposed using an exposure machine (ABM, model: ABM / 500 / DUV / DCCD / SA) with a 365nm wavelength light source, with exposure amounts of 150mJ, 250mJ and 350mJ. The exposed film was then developed, soaked in a 2.38% tetramethylammonium hydroxide aqueous solution for 60 seconds, washed with water for 30 seconds and then dried with high-purity nitrogen. During the process, the film thickness was monitored and the development film loss (the reduction in film thickness after development) was calculated. Finally, an optical microscope was used to observe the integrity of the pattern after exposure, and the minimum energy required to prepare a complete pattern was selected. A is the judgment for a complete pattern that can be obtained when the exposure amount is 150mJ, B is the judgment for a complete pattern that can be obtained when the exposure amount is 250mJ, C is the judgment for a complete pattern that can be obtained when the exposure amount is 350mJ, and D is the judgment for a complete pattern that cannot be obtained when the exposure amount is 350mJ. Grade A indicates the best photosensitivity.

[0109] (2) Determination of residual sulfur

[0110] The sulfur content of the cured film was measured using an element analyzer (Euro Vector, model: EA3000), and the ratio of the mass of sulfur element to the total amount of the cured film was calculated.

[0111] (3) Determination of dielectric constant

[0112] The dielectric constant of the cured film was measured using a dielectric constant tester (China Science Micro-Nano Precision Instrument Co., Ltd., model: GCSTD-D), with a frequency selection range of 1-1000 Hz. The average value of the dielectric constant measured within this frequency range was the dielectric constant value of the cured film.

[0113] (4) Determination of visible light transmittance

[0114] The transmittance of the cured film in the visible light wavelength range (400 nm-760 nm) was measured using an ultraviolet-visible spectrophotometer (Shimadzu Corporation, model: UV-2600i), and the same glass as the substrate was used as a reference sample.

[0115] Table 1 Performance test results

[0116]

[0117] (5) Adhesion test was carried out using the products of Example 4 and Comparative Example 2 as examples:

[0118] Photolithography process conditions: 120℃ baking for 2min, exposure energy: 50mj / cm2, development time 60s. Since the line width is 100-160nm, the industry cannot use mechanical equipment to test the performance of such fine lines. The only characterization method recognized by the industry is: prepare the resin into photoresist, and observe the resulting pattern with a scanning electron microscope (SEM). If there is no peeling or glue back phenomenon, the line is straight and the edge is relatively smooth, which proves that the adhesion performance is good; if glue back, peeling or line deformation occurs, it proves that the resin has poor viscosity.

[0119] Figure 1 and 2 The photoresist patterns of Example 4 and Comparative Example 2 respectively show that the photoresist pattern prepared by using the resin without nitrile monomer is deformed after exposure and development, the line edges are rough and twisted, peeling occurs, and the adhesion to the substrate is poor.

[0120] It is easy to understand that the above embodiments are only examples for clear explanation and do not mean that the present invention is limited thereto. For ordinary technicians in the relevant field, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived from this are still within the protection scope of the present invention.

Claims

1. A high-adhesion positive KrF photoresist resin composition, characterized in that: The composition comprises the following components in parts by weight: KrF photoresist resin, 1000 parts, Photoacid generator, 1-20 parts, Additives, 6-100 parts, Organic solvent, 500-800 parts, Fluorinated ester compounds, 2-50 parts.

2. The high-adhesion positive KrF photoresist resin composition according to claim 1, characterized in that: The KrF photoresist resin has a structure as shown in the following formula (1): In the formula, R1 and R3 are each independently a H atom, an alkyl group or an alkoxy group having 1 to 6 carbon atoms; R2 is a nitrile-containing structure; 0<x<1, 0<y<1, 0<z<1, and x+y+z=1; R1 and R3 may be the same or different.

3. The high-adhesion positive KrF photoresist resin composition according to claim 2, characterized in that: In the structure shown in formula (1), R1 is a hydroxyl group; and / or R3 is a low activation energy deprotection acidic group, including at least one of the groups shown in the following structures: and / or R2 is a nitrile-containing structure derived from at least one of the nitrile monomers having the following structure: Wherein, R4 is independently a H atom or a methyl group; R5 and R6 are independently an alkylene group having 1 to 10 carbon atoms, preferably a methylene group.

4. The high-adhesion positive KrF photoresist resin composition according to claim 2, characterized in that: The weight average molecular weight of the KrF photoresist resin is 1000-100000, preferably 2000-50000.

5. The high-adhesion positive KrF photoresist resin composition according to claim 1, characterized in that: The photoacid generator is selected from one or more of triphenylsulfonium perfluorobutanesulfonate, sulfonium salts and their derivatives, iodonium salts and their derivatives, oxime esters, organic halogen compounds, diazosulfonium and imide sulfonate, preferably one or more of triphenylsulfonium perfluorobutanesulfonate, sulfonium salts, triphenylsulfonium camphorsulfonate, iodonium salts, 4,4'-dimethyldiphenyliodonium hexafluorophosphate.

6. The high-adhesion positive KrF photoresist resin composition according to claim 1, characterized in that: The additive is selected from at least one of a leveling agent, an acid quencher and an acid diffusion inhibitor.

7. The high-adhesion positive KrF photoresist resin composition according to claim 6, characterized in that: The leveling agent is a fluorinated surfactant; and / or The acid quencher is tetrabutylammonium hydroxide (TBAH); and / or The acid diffusion inhibitor is triethylamine.

8. The high-adhesion positive KrF photoresist resin composition according to claim 1, characterized in that: The organic solvent comprises one or more of ethers, esters, ketones or hydroxyl-containing solvents, preferably one or more of propylene glycol methyl ether acetate, cyclopentanone, cyclohexanone, ethyl lactate, butyl acetate, 2-ethoxyethanol and 3-ethoxyethyl propionate, propylene glycol monomethyl ether, propylene glycol monoacetate, propylene glycol monoethyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol methyl ethyl ether, neopentyl acetate, methyl ethyl ketone, methyl isobutyl ketone, diacetone alcohol, gamma-butyrolactone, ethyl acetate, ethylene glycol monomethyl ether, and ethylene glycol monomethyl ether acetate.

9. The high-adhesion positive KrF photoresist resin composition according to claim 1, characterized in that: The thermal decomposition temperature of the fluorine-containing ester compound is 100-350°C, preferably 120-260°C.

10. The high-adhesion positive KrF photoresist resin composition according to claim 1 or 9, characterized in that: The fluorine-containing ester compound is selected from one or more of ethyl 2,2,2-trifluoroacetate, 4-fluorophenyl acetate, dimethyl 2-fluoromalonate, methyl 2-(trifluoromethyl)benzoate, ethyl 2-fluoropropionate, diethyl 2,2-difluoromalonate, ethyl 4,4-difluoroacetoacetate, trifluoroethyl methacrylate, methyl p-fluorobenzoate, ethyl p-fluorobenzoate, and isopropyl perfluorovalerate; Preferably, the fluorine-containing ester compound does not contain a sulfur-containing group, and the sulfur-containing group includes but is not limited to a sulfonic acid group and a sulfonic acid ester group; Preferably, the fluorine-containing ester compound does not contain chlorine element.

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