A kind of semi-transparent perovskite solar cell based on ternary cation perovskite light-absorbing layer and preparation method thereof

Abstract

The application provides a kind of based on three cationic perovskite light-absorbing layer's semi-transparent perovskite solar cell and preparation method thereof, the cell is sequentially provided with conductive glass, NiO hole transport layer, SAM hole transport layer, Cs 0.05 FA 0.85 MA 0.1 PbI x Br 3‑x Perovskite light-absorbing layer, PCBM electron transport layer, BCP interface modification layer and metal electrode;The preparation of perovskite light-absorbing layer is as follows: PbI2, PbBr2, FAI, MAI, CsI are dissolved into DMF and DMSO mixed solution, the amount-of-substance ratio of each component is (PbI2+PbBr2): FAI: MAI: CsI is 1.7115: 1.3855: 0.163: 0.0815;Then 9mol% MACl is doped, and rotary stirring is carried out until complete dissolution, to obtain perovskite precursor solution, which is coated on the surface of the substrate, and then annealed to obtain;Metal electrode includes core induction layer and Ag electrode layer, the material of core induction layer is Au, Cu or Al, and the thickness is 1nm, and the thickness of Ag electrode layer is 7-16nm.The application improves the light transmittance of perovskite light-absorbing layer and metal electrode and the conductivity of metal electrode, thereby effectively balancing the light transmittance and conversion efficiency of semi-transparent perovskite battery.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of perovskite solar cells, in particular to a kind of semi-transparent perovskite solar cell based on ternary cation perovskite light-absorbing layer and preparation method thereof. BACKGROUND

[0002] In recent years, perovskite solar cells have attracted great attention due to their excellent optoelectronic properties and potential cost advantage. One of the main research directions in the field of photovoltaics is semi-transparent solar cells. It is a kind of cell that allows part of the visible light to pass through (part of the visible light absorption), which has the advantage of lighting and power generation in one, and can be used on car roofs, building and skyscraper windows, providing a continuous power source for the car body and providing shade and clean energy for buildings. It is worth noting that due to the high light absorption coefficient and adjustable band gap of perovskite materials, such cells can also be semi-transparent, becoming another focus in the field of scientific research. Generally, efficiency and transmittance are the two main indicators for evaluating semi-transparent solar cells. However, more visible light transmission means less light absorption by the device's light-sensitive layer in this wavelength range. Therefore, balancing light absorption by the light-sensitive layer and overall device transmittance is the key to designing this type of device. Currently, semi-transparency of perovskite solar cells is generally achieved by making the perovskite light-absorbing layer very thin. For example, Yuan et al. reduced the concentration of perovskite precursor, and the thickness of the corresponding film also decreased from 300 nm to 150 nm. A semi-transparent cell based on a 150 nm thick light-sensitive layer achieved a photoelectric conversion efficiency of 10.83% and an average visible light transmittance of 21% (Journal of Materials Chemistry A, 2018, 6(40): 19696-19702). However, when the film thickness is reduced, the quality of the film will also deteriorate, making it difficult to obtain a dense and uniform film. At the same time, as the number of defects in the film increases, the stability of the device also deteriorates. Another method for semi-transparency of perovskite solar cells is to prepare a microstructured perovskite light-sensitive layer, i.e. to let the perovskite film partially cover the light-absorbing layer, and to let the area not covered by the perovskite be completely transparent, providing a path for light to pass through, thereby achieving semi-transparency. For example, Eperon et al. from the University of Oxford used a dewetting method to prepare an island-like structure of perovskite layer, the thickness of the "island" formed by perovskite is sufficient to absorb all visible light, while the area not covered by perovskite is transparent, ultimately achieving a photoelectric conversion efficiency of 3.5% and an average visible light transmittance of 30% (ACS Nano, 2014, 8(1): 591-598). However, this method can cause direct contact between the electron transport layer and the hole transport layer in the area not covered by perovskite, forming a short circuit and thus exacerbating the recombination of photo-generated carriers. In addition, in the selection of electrodes for semi-transparent perovskite cells, transparent oxides or metal nanowires are often used as electrode materials (Nanoscale, 2015, 7(5): 1642-1649), but transparent oxides as electrodes of the cell will result in a large contact resistance between the cells, and although metal nanowires have good conductivity, their high junction resistance limits their overall conductivity.Therefore, it is still a big challenge to use these materials as transparent electrodes in the preparation process of high-efficiency semi-transparent perovskite solar cells.

[0003] In summary, in the preparation method of the semi-transparent perovskite solar cell currently used, although the semi-transparent light-absorbing layer can be prepared by reducing the thickness, the reduction of the film thickness is accompanied by the weakening of light absorption, and there are still many difficulties in preparing a uniform, pore-free, and defect-free ultrathin perovskite light-absorbing layer. Although the preparation of the perovskite layer with a micro-nano structure does not need to control the thickness of the film, the photoelectric conversion efficiency of the battery will decrease with the decrease of the coverage rate because the coverage of the film is incomplete. At the same time, the exposed area also forms a photo-generated carrier recombination center, affecting the performance of the device. Therefore, the two methods of preparing semi-transparent perovskite solar cells are not perfect. SUMMARY

[0004] One of the technical problems to be solved by the present application is to provide a semi-transparent perovskite solar cell based on a ternary cation perovskite light-absorbing layer, which improves the light transmittance of the perovskite light-absorbing layer and the metal electrode and the conductivity of the metal electrode, thereby effectively balancing the light transmittance and conversion efficiency of the semi-transparent perovskite solar cell.

[0005] The present application is to solve one of the above technical problems:

[0006] A semi-transparent perovskite solar cell based on a ternary cation perovskite light-absorbing layer, the semi-transparent perovskite solar cell being sequentially provided from bottom to top with a conductive glass, a NiO hole transport layer, a SAM hole transport layer, a Cs 0.05 FA 0.85 MA 0.1 PbI x Br 3-x perovskite light-absorbing layer, a PCBM electron transport layer, a BCP interface modification layer, and a metal electrode, wherein 0

[0007] The Cs 0.05 FA 0.85 MA 0.1 PbI x Br 3-x The preparation method of the Cs perovskite light-absorbing layer is as follows: a certain amount of PbI2, PbBr2, FAI, MAI, and CsI is dissolved in a mixed solution of DMF and DMSO, and the amount-of-substance ratio of the components is (PbI2+PbBr2):FAI:MAI:CsI is 1.7115:1.3855:0.163:0.0815; then 9 mol% of MACl is added as an additive; then the medicine is completely dissolved by rotating and stirring to obtain a perovskite precursor solution; finally, the solution is spin-coated on the surface of a substrate, and then annealing is performed at a temperature of 80-120°C, thereby obtaining the Cs0.05 FA 0.85 MA 0.1 PbI x Br 3-x perovskite light-absorbing layer;

[0008] The metal electrode comprises a core induction layer and an Ag electrode layer, the material of the core induction layer is Au, Cu or Al, the thickness is 0.5-1 nm, and the thickness of the Ag electrode layer is 7-16 nm.

[0009] Further, the conductive glass is ITO conductive glass, the thickness of the ITO conductive glass is 350-450 nm, the thickness of the NiO hole transport layer is 10-30 nm, the thickness of the SAM hole transport layer is 5-10 nm, the thickness of the perovskite light-absorbing layer is 70-200 nm, the thickness of the PCBM electron transport layer is 10-30 nm, and the thickness of the BCP interface modification layer is 1-5 nm.

[0010] Further, the volume ratio of DMF:DMSO is 4:1.

[0011] Further, the Cs 0.05 FA 0.85 MA 0.1 PbI x Br 3-x x=1.5 in the perovskite light-absorbing layer.

[0012] Further, the concentration of the perovskite precursor solution is 1.63 M, and PbI2 is excessive by 5 mol %.

[0013] The technical problem to be solved by the present application is to provide a preparation method of a semi-transparent perovskite solar cell based on a ternary cation perovskite light-absorbing layer, which improves the light transmittance of the perovskite light-absorbing layer and the metal electrode and the conductivity of the metal electrode, thereby effectively balancing the light transmittance and conversion efficiency of the semi-transparent perovskite solar cell.

[0014] The present application is to solve the above technical problem two:

[0015] A preparation method of a semi-transparent perovskite solar cell based on a ternary cation perovskite light-absorbing layer, the structure of the semi-transparent perovskite solar cell is as described in any one of claims 1-2, and the steps of the method are as follows:

[0016] 1) spin-coating a NiO hole transport layer on the treated ITO conductive glass;

[0017] 2) moving the substrate into a glove box, and then spin-coating a SAM hole transport layer;

[0018] 3) spin-coating perovskite film, spin-coating the prepared perovskite precursor solution on the substrate, using multi-step spin-coating method, and performing annealing at 80-120℃ after spin-coating; wherein the preparation method of the perovskite precursor solution is: dissolving a certain amount of PbI2, PbBr2, FAI, MAI and CsI into a mixed solution of DMF and DMSO, and the amount-of-substance ratio of each component is (PbI2+PbBr2):FAI:MAI:CsI=1.7115:1.3855:0.163:0.0815; then adding 9mol% MACl as an additive; then stirring by rotation until the medicine is completely dissolved, to obtain the perovskite precursor solution;

[0019] 4) spin-coating to prepare PCBM electron transport layer;

[0020] 5) spin-coating to prepare BCP interface modification layer;

[0021] 6) evaporating transparent electrode: first evaporating 1nm of Au, Cu or Al as nucleation induction layer at a slow speed, and then evaporating 7-16nm of ultra-thin Ag electrode layer.

[0022] Further, the preparation method is specifically as follows:

[0023] 1) spin-coating NiO hole transport layer on the treated ITO conductive glass at a speed of 3000rpm / s for 20s, and then placing it on a constant temperature heating table to heat at 140℃ in air for 10min; wherein the preparation method of the NiO solution is: dissolving NiO nanoparticles in deionized water with a concentration of 10mg / ml;

[0024] 2) moving the substrate into a glove box, and then spin-coating SAM hole transport layer at a speed of 4000rpm / s for 30s. After spin-coating, place it on a constant temperature heating table to heat at 100℃ for 10min; wherein the preparation method of the SAM solution is: dissolving Me-4PACz nanoparticles in ethanol with a concentration of 0.5mg / ml;

[0025] 3) spin-coating perovskite film, and filtering the dissolved perovskite precursor solution with a 0.2μm PTFE filter before spin-coating perovskite film;

[0026] The prepared perovskite precursor solution is spin-coated on a substrate, a multi-step spin-coating mode is used, the first step is to adjust the rotation speed to 1000 rpm / s, and spin-coating is performed for 10 s; the second step is to spin-coat at a rotation speed of 5000 rpm / s for 40 s; and when the spin-coating time is 10 s, 250 μL of anti-solvent chlorobenzene is added dropwise by using a pipette during the second step of spin-coating; after spin-coating, annealing is performed at 100 DEG C for 30 min; wherein the preparation method of the perovskite precursor solution is as follows: a certain amount of PbI2, PbBr2, FAI, MAI and CsI is dissolved in a mixed solution of DMF and DMSO, and the amount-of-substance ratio of each component is (PbI2+PbBr2):FAI:MAI:CsI=1.7115:1.3855:0.163:0.0815; then 9 mol% of MACl is added as an additive; then the medicine is stirred until it is completely dissolved, and a perovskite precursor solution is obtained;

[0027] 4) PCBM electron transport layer is prepared by spin-coating at a rotation speed of 1500 rpm / s for 30 s; then heating is performed at 100 DEG C for 5 min; wherein the solution preparation method of the PCBM electron transport layer is as follows: PCBM nanoparticles are dissolved in 1 mL of chlorobenzene, and the concentration is 20 mg / mL;

[0028] 5) BCP interface modification layer is prepared by spin-coating at a rotation speed of 5000 rpm / s for 30 s in a dynamic spin-coating mode; then heating is performed at 100 DEG C for 3 min; wherein the solution preparation method of the BCP interface modification layer is as follows: BCP nanoparticles are dissolved in an isopropanol solution, and the concentration is 0.5 mg / mL; the supernatant is used;

[0029] 6) A transparent electrode is evaporated, 1 nm of Au, Cu or Al is slowly evaporated at a speed of 0.01 nm / s as a nucleation induction layer, and then a 7-16 nm ultra-thin Ag electrode layer is evaporated at a speed of 0.05 nm / s.

[0030] Further, the volume ratio of DMF:DMSO is 4:1.

[0031] Further, the concentration of the perovskite precursor solution is 1.63 M, and PbI2 is excessive by 5 mol%.

[0032] The present application has the following advantages:

[0033] The present application regulates the light transmittance of the thin film from the perspective of perovskite component regulation, that is, the light transmittance of the perovskite thin film is regulated by adjusting the amount-of-substance ratio of the three cations in the perovskite (Cs 0.05 FA 0.85 MA 0.1In order to expand the band gap of the material and realize more visible light transmission, a certain amount of Br and Cl is doped in the perovskite (PbI3). Meanwhile, by changing the ratio of I:Br or I:Br:Cl ions in the perovskite component, perovskite films with different light transmittance can be further realized. The present application realizes the semi-transparency of perovskite cells from the perspective of the essential properties of the material, avoiding the problems of quality reduction of perovskite light-absorbing layer and efficiency reduction of the device caused by the reduction of film thickness and incomplete film coverage, effectively balancing the light transmittance and conversion efficiency of the semi-transparent perovskite cell. Moreover, compared with transparent oxide or metal nanowire as a transparent electrode, the present application uses ultra-thin metal (Au, Cu or Al / Ag) as a transparent electrode. By depositing 1 nm of Au, Cu or Al as a nucleation induction layer, the particle size of the ultra-thin silver electrode is reduced through the strong adhesion between Au, Cu or Al and Ag, thereby obtaining a uniform and continuous high-quality ultra-thin silver electrode. The electrode effectively reduces light scattering and has high conductivity, which maintains the photoelectric conversion efficiency of the cell while achieving a certain light transmittance. BRIEF DESCRIPTION OF DRAWINGS

[0034] The present application will be further described below with reference to the accompanying drawings and embodiments.

[0035] Figure 1 The layered structure diagram of the semi-transparent perovskite solar cell based on the ternary cation perovskite light-absorbing layer according to the present application.

[0036] Figure 2 The transmittance of the metal electrode (Cu / Ag) of the present application with different content of Br in the embodiment of the present application. - Absorption spectrum of the doped perovskite absorption layer.

[0037] Figure 3 The transmittance of the metal electrode (Cu / Ag) of the present application with different content of Br in the embodiment of the present application. - Transmission spectrum of the doped perovskite absorption layer.

[0038] Figure 4 The transmittance comparison diagram of the metal electrode (Ag) of the comparative example with different thickness and the metal electrode (Cu / Ag) of the present application.

[0039] Figure 5 The transmittance comparison diagram of the semi-transparent perovskite solar cell of the embodiment of the present application and the reference group solar electrode. DETAILED DESCRIPTION

[0040] The present application will be further described below with reference to the accompanying drawings and embodiments. Figures 1-5and specific embodiments are provided to describe the technical solutions of the present application clearly and completely. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present application. The specific conditions not mentioned in the embodiments are carried out according to the conventional conditions or the conditions suggested by the manufacturers. The reagents or instruments not mentioned by the manufacturers are all conventional products that can be purchased in the market.

[0041] Embodiments

[0042] 1. Preparation method:

[0043] 1) First, the ITO conductive glass is placed in an ultrasonic tank and cleaned with conductive glass cleaning solution, deionized water, acetone and ethanol for 15 minutes respectively, then dried with a nitrogen gun, and placed in an ultraviolet ozone machine for 15 minutes; spin-coat the NiO hole transport layer on the treated ITO conductive glass, the rotation speed is 3000 rpm / s, and the spin-coating time is 20 seconds. After spin-coating, place it on a constant temperature heating table in air at 140°C for 10 minutes; wherein the configuration method of the NiO solution is: dissolve NiO nanoparticles in deionized water, the concentration is 10 mg / ml;

[0044] 2) Move the substrate into the glove box, then spin-coat the SAM hole transport layer, the rotation speed is 4000 rpm / s, and the spin-coating time is 30 seconds. After spin-coating, place it on a constant temperature heating table at 100°C for 10 minutes; wherein the configuration method of the SAM solution is: dissolve Me-4PACz nanoparticles in ethanol, the concentration is 0.5 mg / ml;

[0045] 3) Spin-coat the perovskite film, before spin-coating the perovskite film, filter the dissolved perovskite precursor solution with a 0.2 μm PTFE filter;

[0046] The prepared perovskite precursor solution was spin-coated on the substrate, using a multi-step spin-coating mode, the first step was to adjust the rotation speed to 1000 rpm / s, spin-coating for 10 s; the second step was to adjust the rotation speed to 5000 rpm / s, spin-coating for 40 s; and when the spin-coating time was 10 s, 250 μL of anti-solvent chlorobenzene was added dropwise using a pipette during the second step of spin-coating; after spin-coating, annealing was performed on a heating stage at 100°C for 30 min; wherein the preparation method of the perovskite precursor solution was as follows: a certain amount of PbI2, PbBr2, FAI, MAI and CsI was dissolved in a DMF and DMSO mixed solution, and the amount-of-substance ratio of each component was (PbI2+PbBr2):FAI:MAI:CsI=1.7115:1.3855:0.163:0.0815; then 9 mol% of MACl was added as an additive; then the medicine was stirred until it was completely dissolved, to obtain the perovskite precursor solution; the concentration of the perovskite precursor solution was 1.63 M, and PbI2 was in excess by 5 mol%.

[0047] 4) PCBM electron transport layer was prepared by spin-coating at a rotation speed of 1500 rpm / s for 30 s; then heating at 100°C for 5 min; wherein the solution preparation method of the PCBM electron transport layer was as follows: PCBM nanoparticles were dissolved in 1 mL of chlorobenzene, and the concentration was 20 mg / mL;

[0048] 5) BCP interface modification layer was prepared by spin-coating at a rotation speed of 5000 rpm / s for 30 s in a dynamic spin-coating mode; then heating at 100°C for 3 min; wherein the solution preparation method of the BCP interface modification layer was as follows: BCP nanoparticles were dissolved in an isopropanol solution, and the concentration was 0.5 mg / mL, and the supernatant was used;

[0049] 6) A transparent electrode was evaporated, first 1 nm of Cu was slowly evaporated at a speed of 0.01 nm / s as a nucleation induction layer, and then 7-16 nm of an ultra-thin Ag electrode layer was evaporated at a speed of 0.05 nm / s. An ITO / NiO / SAM / Cs 0.05 FA 0.85 MA 0.1 PbI x Br 3-x / PCBM / BCP / Au / Ag structure of a semi-transparent perovskite solar cell was prepared.

[0050] Among them, the thickness of the ITO conductive glass is 450 nm, the thickness of the NiO hole transport layer is 30 nm, the thickness of the SAM hole transport layer is 10 nm, the thickness of the perovskite light-absorbing layer is 200 nm, the thickness of the PCBM electron transport layer is 30 nm, and the thickness of the BCP interface modification layer is 5 nm.

[0051] 2. Performance test

[0052] The structural diagram of the device is as follows Figure 1 As shown, for different contents of Br - Performance tests were conducted on the doped perovskite light-absorbing layer and Ag electrode layers of varying thicknesses. For details, please refer to [link to relevant documentation]. Figures 2-5 , and Table 1.

[0053] Figure 2 Different amounts of Br - Absorption spectra of perovskite absorption layers doped with (i.e., the amount of PbBr2 / (the amount of PbI2 + the amount of PbBr2)). Figure 2 It can be seen that the band gap of the perovskite light-absorbing layer increases with the increase of the doping content of Br ions. Figure 2 Meanwhile, the transmittance of the perovskite film significantly increases with increasing Br ion content. Figure 3 ). Figure 4 This is a schematic diagram comparing the transmittance of comparative metal electrodes (Ag) of different thicknesses with the metal electrode (Cu / Ag) of this invention. Table 1 compares the average transmittance and sheet resistance parameters of the comparative metal electrodes (Ag) of different thicknesses with the metal electrode (Cu / Ag) of this invention. As can be seen from the figure, under the premise of Ag electrodes of the same thickness, the metal electrode (Cu / Ag) of this invention has higher transmittance and lower sheet resistance. Figure 5 This is a comparison chart of the transmittance of the semi-transparent perovskite solar cell of this invention and a reference group of solar cells. The perovskite absorber layer of the semi-transparent perovskite solar cell of this invention has a 50% Br content. - The doped perovskite absorber layer and metal electrode are 1 nm Cu / 10 nm Ag, while the reference group's perovskite absorber layer is Cs. 0.05 FA 0.85 MA 0.1 The PbI3 metal electrode is 130nm Ag, and the remaining layers have the same structure as in this invention. As shown in the figure, the translucent perovskite solar cell of this invention has a higher light transmittance than the reference group. The average visible light transmittance of this invention is calculated to be 15.4%, which is better than the 7.71% of the reference group. At the same time, the photoelectric conversion efficiency of this invention is 15.9%, while that of the reference group is 16.5%, and no significant decrease in efficiency is observed.

[0054] Table 1. Average transmittance and sheet resistance of electrodes with different thicknesses

[0055]

[0056] It can be seen that, compared with the prior art, the semi-transparency of the perovskite battery is realized from the perspective of material component regulation, and the problems of quality reduction of the perovskite light-absorbing layer and efficiency reduction of the device caused by the reduction of the film thickness and incomplete film coverage are avoided; in combination with the ultra-thin metal Au / Ag as the transparent electrode, the light scattering is further reduced, and at the same time, the lower series resistance of the battery is ensured, so that the light transmittance and conversion efficiency problems of the semi-transparent perovskite battery are effectively balanced.

[0057] Although the specific embodiments of the present application are described above, those skilled in the art should understand that the specific embodiments described are only illustrative, and are not intended to limit the scope of the present application, and equivalent modifications and changes made by those skilled in the art in accordance with the spirit of the present application should be covered within the scope of the claims of the present application.

Claims

1. A semi-transparent perovskite solar cell based on a ternary cation perovskite light-absorbing layer, characterized in that: The semi-transparent perovskite solar cell is arranged from bottom to top as follows: conductive glass, NiO hole transport layer, SAM hole transport layer, and Cs. 0.05 FA 0.85 MA 0.1 PbI x Br 3-x The perovskite light-absorbing layer, the PCBM electron transport layer, the BCP interface modification layer, and the metal electrode, wherein 0 < x < 3; The Cs 0.05 FA 0.85 MA 0.1 PbI x Br 3-x The perovskite light-absorbing layer is prepared as follows: A certain amount of PbI₂, PbBr₂, FAI, MAI, and CsI are dissolved in a mixed solution of DMF and DMSO, with the molar ratio of each component (PbI₂ + PbBr₂): FAI: MAI: CsI being 1.7115:1.3855:0.163:0.0815; then 9 mol% MACl is added as an additive; the mixture is then stirred until the reagents are completely dissolved to obtain a perovskite precursor solution; finally, the solution is spin-coated onto the substrate surface and annealed at 80-120℃ to obtain CsI. 0.05 FA 0.85 MA 0.1 PbI x Br 3-x Perovskite light-absorbing layer; The metal electrode includes a core-induced layer and an Ag electrode layer. The core-induced layer is made of Au, Cu, or Al and has a thickness of 0.5-1 nm. The Ag electrode layer has a thickness of 7-16 nm.

2. A semi-transparent perovskite solar cell based on a ternary cation perovskite light-absorbing layer according to claim 1, characterized in that: The conductive glass is ITO conductive glass with a thickness of 350~450 nm, the NiO hole transport layer has a thickness of 10~30 nm, the SAM hole transport layer has a thickness of 5~10 nm, the perovskite light-absorbing layer has a thickness of 70~200 nm, the PCBM electron transport layer has a thickness of 10~30 nm, and the BCP interface modification layer has a thickness of 1~5 nm.

3. A semi-transparent perovskite solar cell based on a ternary cation perovskite light-absorbing layer according to claim 1, characterized in that: The volume ratio of DMF to DMSO is 4:

1.

4. A semi-transparent perovskite solar cell based on a ternary cation perovskite light-absorbing layer according to claim 1, characterized in that: The Cs 0.05 FA 0.85 MA 0.1 PbI x Br 3-x x=1.5 in the perovskite light-absorbing layer.

5. A semi-transparent perovskite solar cell based on a ternary cation perovskite light-absorbing layer according to claim 1, characterized in that: The concentration of the perovskite precursor solution was 1.63 M, with an excess of 5 mol of PbI2.

6. A method for fabricating a semi-transparent perovskite solar cell based on a ternary cation perovskite light-absorbing layer, characterized in that: The semi-transparent perovskite solar cell structure is as described in any one of claims 1-2, and the method steps are as follows: 1) Spin-coat a NiO hole transport layer onto the treated ITO conductive glass; 2) Move the substrate into the glove box, and then spin-coat the SAM hole transport layer; 3) Spin-coating perovskite films: The prepared perovskite precursor solution is spin-coated onto the substrate using a multi-step spin-coating method. After spin-coating, annealing is performed at 80-120℃. The perovskite precursor solution is prepared as follows: a certain amount of PbI2, PbBr2, FAI, MAI, and CsI are dissolved in a mixed solution of DMF and DMSO, with the molar ratio of each component being (PbI2+PbBr2):FAI:MAI:CsI = 1.7115:1.3855:0.163:0.0815. Then, 9 mol% of MACl is added as an additive. The mixture is then stirred until the reagents are completely dissolved to obtain the perovskite precursor solution. 4) Spin coating to prepare the electron transport layer of the PCBM; 5) Spin coating to prepare the BCP interface modification layer; 6) Evaporation of transparent electrode: First, slowly evaporate 1 nm of Au, Cu or Al as a nucleation induction layer, and then evaporate an ultrathin Ag electrode layer of 7-16 nm.

7. The method for fabricating a semi-transparent perovskite solar cell based on a ternary cation perovskite light-absorbing layer according to claim 6, characterized in that: The specific preparation method is as follows: 1) A NiO hole transport layer was spin-coated onto the treated ITO conductive glass at a speed of 3000 rpm / s for 20 s. After spin-coating, the glass was placed on a constant temperature heating stage and heated in air at 140°C for 10 min. The NiO solution was prepared by dissolving NiO nanoparticles in deionized water at a concentration of 10 mg / ml. 2) The substrate was transferred into the glove box, and then the SAM hole transport layer was spin-coated at a speed of 4000 rpm / s for 30 s. After spin-coating, the substrate was placed on a constant temperature heating table and heated at 100℃ for 10 min. The SAM solution was prepared by dissolving Me-4PACz nanoparticles in ethanol at a concentration of 0.5 mg / ml. 3) Spin-coating perovskite films: Before spin-coating the perovskite films, the dissolved perovskite precursor solution is filtered through a 0.2µm PTFE filter. The prepared perovskite precursor solution was spin-coated onto the substrate using a multi-step spin-coating method. In the first step, the spin speed was adjusted to 1000 rpm / s for 10 seconds; in the second step, the spin speed was 5000 rpm / s for 40 seconds. During the second spin-coating step, 250 µL of the antisolvent chlorobenzene was added dropwise using a pipette when there were 10 seconds remaining. After spin-coating, the solution was annealed at 100°C for 30 minutes. The perovskite precursor solution was prepared as follows: a certain amount of PbI₂, PbBr₂, FAI, MAI, and CsI were dissolved in a mixed solution of DMF and DMSO, with a molar ratio of (PbI₂ + PbBr₂): FAI: MAI: CsI of 1.7115:1.3855:0.163:0.0815. Then, 9 mol% MACl was added as an additive. The solution was then stirred until the reagents were completely dissolved to obtain the perovskite precursor solution. 4) Spin-coating was used to prepare the PCBM electron transport layer at a spin speed of 1500 rpm / s for 30 s, followed by heating at 100℃ for 5 min. The solution for the PCBM electron transport layer was prepared by dissolving PCBM nanoparticles in 1 mL of chlorobenzene at a concentration of 20 mg / mL. 5) The BCP interface modification layer was prepared by spin coating at a speed of 5000 rpm / s and a spin coating time of 30 s using a dynamic spin coating method; then heated at 100℃ for 3 min; the solution for the BCP interface modification layer was prepared by dissolving BCP nanoparticles in isopropanol solution at a concentration of 0.5 mg / mL, and using the supernatant. 6) Evaporation of transparent electrodes: First, a 1 nm Au, Cu or Al layer is slowly deposited at a speed of 0.01 nm / s as a nucleation induction layer, and then an ultrathin Ag electrode layer of 7-16 nm is deposited at a speed of 0.05 nm / s.

8. The method for fabricating a semi-transparent perovskite solar cell based on a ternary cation perovskite light-absorbing layer according to claim 1, characterized in that: The volume ratio of DMF to DMSO is 4:

1.

9. The method for fabricating a semi-transparent perovskite solar cell based on a ternary cation perovskite light-absorbing layer according to claim 1, characterized in that: The concentration of the perovskite precursor solution was 1.63 M, with an excess of 5 mol of PbI2.

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