Temperature control method, semiconductor device manufacturing method, substrate processing apparatus, and program

Abstract

According to the invention, the heating speed in a low-temperature area can be increased. A temperature control method includes a process temperature setting step of controlling heating inside a reaction tube and cooling inside the reaction tube so that the temperature of a substrate disposed inside the reaction tube becomes a preset process temperature, the process temperature setting step including: a temperature raising step of raising the temperature of the substrate by supplying a certain amount of power; setting the temperature of a heater wire arranged outside the reaction tube to be higher than the processing temperature; and a cooling gas supply step for supplying a cooling gas to the reaction tube.

Description

Technical Field

[0001] The present disclosure relates to a temperature control method, a method for manufacturing a semiconductor device, and a substrate processing apparatus and program. Background Art

[0002] As a process in the manufacturing process of a semiconductor device, a predetermined process is performed on a wafer (hereinafter referred to as a substrate) (for example, see patent documents 1 to 3). In these documents, a technology for controlling the processing temperature for processing a wafer is described. In recent years, the temperature for processing a wafer has tended to decrease. Since the temperature of the heater wire used for temperature control is low at low temperatures, it mainly emits long-wavelength radiation. Sometimes this long-wavelength radiation is absorbed by the reaction tube and is associated with a decrease in the heating rate of the wafer.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2000-181549

[0006] Patent Document 2: International Publication No. 2018-100826

[0007] Patent Document 3: Japanese Patent Application Publication No. 2014-209569 Summary of the invention

[0008] Problems to be solved by the invention

[0009] The present disclosure provides a technology that can improve the heating rate in a low temperature region.

[0010] Technical means of solving problems

[0011] According to one embodiment of the present disclosure, the following technology is provided: a temperature control method, comprising: a processing temperature setting step, controlling the heating and cooling inside a reaction tube so that the temperature of a substrate arranged in the reaction tube becomes a predetermined processing temperature, wherein the processing temperature setting step comprises: a heating step, supplying specified electric power so that the temperature of a heater wire arranged outside the reaction tube is higher than the processing temperature; and a cooling gas supplying step, supplying cooling gas to the reaction tube.

[0012] Effects of the Invention

[0013] According to the present disclosure, the temperature increase rate in the low temperature region can be increased. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present disclosure.

[0015] Figure 2A For showing Figure 1 2A-2A line cross-sectional view of a substrate processing device.

[0016] Figure 2B For showing Figure 1 2B-2B line cross-sectional view of a substrate processing device.

[0017] Figure 3 It is a diagram schematically showing the structure of a control device in a substrate processing apparatus according to an embodiment of the present disclosure, and the relationship between the control device and a semiconductor manufacturing apparatus.

[0018] Figure 4 It is a diagram showing the hardware configuration of a control computer in the substrate processing apparatus according to the embodiment of the present disclosure.

[0019] Figure 5 It is a cross-sectional view showing a heating unit and a reaction tube accommodating a substrate.

[0020] Fig. 6A 1 is a diagram showing an example of temperature control during substrate processing by the substrate processing apparatus 10 according to the embodiment of the present disclosure.

[0021] Figure 6B This is a graph showing the relationship between substrate temperature and heater output.

[0022] Figure 7 This is a graph showing the relationship between the heater output and time according to a modification of the present disclosure.

[0023] Figure 8 This is a flowchart showing an example of a process related to temperature in a film forming process according to an embodiment of the present disclosure.

[0024] Fig. 9 To express Figure 8 A diagram showing the temperature variation in the furnace in the flow chart shown. DETAILED DESCRIPTION

[0025] Hereinafter, one mode of the present disclosure will be described with reference to the drawings. In addition, the drawings used in the following description are all schematic, and the relationship between the dimensions of the elements shown in the drawings, the ratio of the elements, etc. may not be consistent with reality. In addition, the relationship between the dimensions of the elements and the ratio of the elements may not be consistent even between multiple drawings. In addition, in each figure, the same structure is marked with the same figure mark.

[0026] The substrate processing apparatus 10 of this embodiment is as follows: Figure 1As shown, it is provided with: a cylindrical heating device 12; a cylindrical reaction tube 16, which is accommodated in a furnace space 14 provided inside the heating device 12; and a wafer boat 20, which holds a substrate 18 to be processed in the reaction tube 16. The wafer boat 20 can load the substrates 18 in multiple layers with gaps in a horizontal state, and in this state, a plurality of substrates 18 are held in the reaction tube 16. The wafer boat 20 is placed on an elevator (not shown) through a wafer boat cover 22, and can be raised and lowered by the elevator. Therefore, the loading of the substrate 18 into the reaction tube 16 and the removal of the substrate 18 from the reaction tube 16 are performed by the operation of the elevator. In addition, the reaction tube 16 forms a processing chamber 24 for accommodating the substrate 18, and a gas introduction pipe (not shown) is connected to the reaction tube 16, and the gas introduction pipe is connected to a reactive gas supply source (not shown). In addition, an exhaust pipe 56 is connected to the reaction tube 16 to exhaust the processing chamber 24.

[0027] The heating device 12 as a heater unit is cylindrical, such as Figure 1 As shown, a structure is formed in which at least a heating unit 30 is provided inside a heat insulating structure having a structure in which a plurality of heat insulators are stacked. The heating unit 30 includes a heater wire 30a on a heat insulating material portion (not shown) and the furnace space 14 side of the heat insulating material portion.

[0028] Furthermore, the heating device 12 further includes a side wall portion 32 as a heat insulating portion formed in a cylindrical shape, and an upper wall portion 33 as a heat insulating portion formed so as to cover the upper end of the side wall portion 32 .

[0029] The side wall portion 32 is formed into a multi-layer structure, and is composed of a side wall outer layer 32a formed on the outside of the multi-layer of the side wall portion 32, and a side wall inner layer 32b formed on the inside of the multi-layer. A cylindrical space 34 serving as a cooling gas passage is formed between the side wall outer layer 32a and the side wall inner layer 32b. In addition, a heating portion 30 is provided on the inner side of the side wall inner layer 32b, and the inner side of the heating portion 30 becomes a heating area including a heating portion described later. The furnace space 14 and the cylindrical space 34 are connected via a blowout hole 35. In addition, although the side wall portion 32 is a structure in which a plurality of heat insulators are stacked, it is not limited to such a structure.

[0030] A cooling gas supply port 36 is formed in an upper portion of the side wall outer layer 32 a .

[0031] A rapid cooling exhaust port 40 communicating with the furnace interior space 14 is provided at a substantially horizontal center portion of the cooling gas supply port 36 .

[0032] In addition, if Figure 2B As shown, a plurality of blowing holes 35 are formed in a desired distribution in the side wall inner layer 32b below the cooling gas supply port 36 to connect the cylindrical space 34 with the furnace space 14, as shown in FIG. Figure 1As shown, the cylindrical space 34 and the furnace space 14 are connected substantially horizontally. That is, the cooling gas is blown from the cylindrical space 34 to the furnace space 14 through the blowing holes 35 to cool the reaction tube 16.

[0033] like Figure 1 As shown in the figure, the blow-out hole 35 is formed in the horizontal direction, but it is not limited to this form. For example, it can also be inclined toward the rapid cooling exhaust port 40.

[0034] like Figure 2A As shown, a circular quenching exhaust port 40 is formed on the upper wall portion 33 and is located on the central axis of the heating device 12. In addition, a quenching gas exhaust port 42 is formed on the upper side surface of the upper wall portion 33 and is connected to the quenching exhaust port 40.

[0035] The quenching gas outlet 42 is connected to a duct 50 to which a water tank 52 and an exhaust fan 54 are connected from the upstream side. The heated cooling gas of the heating device 12 is discharged to the outside of the device via the duct 50 , the water tank 52 and the exhaust fan 54 .

[0036] Here, an openable and closable valve 39a is provided near the cooling gas supply port 36. Also, an openable and closable valve 39b is provided near the quenching gas discharge port 42 and the conduit 50.

[0037] Furthermore, the supply of cooling gas can be operated by opening and closing the valve 39a and turning on / off the exhaust fan 54, and the cooling gas is discharged from the quenching gas outlet 42 through the cylindrical space 34 as the cooling gas passage. Here, when the exhaust fan 54 is operated and the cooling gas is discharged through the quenching gas outlet 42, the furnace space 14 becomes negative pressure, and the low-temperature cooling gas is sucked from the cooling gas supply port 36. The low-temperature cooling gas sucked from the cooling gas supply port 36 is blown toward the reaction tube 16 in the furnace space 14 through the cylindrical space 34 and the blowout hole 35, and the reaction tube 16 is cooled. The exhaust fan 54, the quenching gas outlet 42, the blowout hole 35, the cylindrical space 34, the cooling gas supply port 36, etc. of this embodiment are an example of the cooling mechanism disclosed in the present invention.

[0038] like Figure 1As shown, a detection unit (first detection unit) 27 capable of rotating together with the wafer boat 20 and detecting the temperature of the substrate 18 is provided in the reaction tube 16. The detection unit 27 is configured, for example, between the substrates 18 and the substrates 18 held in the wafer boat 20 in multiple layers. In addition, the detection unit 27 includes four temperature sensors, including a first substrate temperature sensor 27-1, a second substrate temperature sensor 27-2, a third substrate temperature sensor 27-3, and a fourth substrate temperature sensor 27-4 in order from the top. In addition, near the reaction tube 16, first to fourth reaction tube temperature sensors 70-1, 70-2, 70-3, and 70-4 are provided as the second detection unit. Figure 1 In the figure, although there are four temperature sensors, the number is not limited to this number, and the number of sensors can be changed according to the film type and process conditions. In addition, sometimes referred to as substrate temperature sensor (first detection unit) 27, reaction tube temperature sensor (second detection unit) 70. Here, the first substrate temperature sensor 27 is a general term for the first substrate temperature sensor 27-1, the second substrate temperature sensor 27-2, the third substrate temperature sensor 27-3, and the fourth substrate temperature sensor 27-4. In addition, although not shown in the figure, a temperature sensor is provided near the heating unit 30 as the third detection unit.

[0039] Figure 3 Schematically shows the structure of the control device 60 and the relationship between the control device 60 and the substrate processing device 10. Figure 3 As shown, the processing chamber 24 includes a substrate temperature sensor 27 , a reaction tube temperature sensor 70 , a gas flow rate regulator 62 , a flow rate sensor 64 , a pressure regulator 66 , and a pressure sensor 68 .

[0040] like Figure 3 As shown, the 1st to 4th substrate temperature sensors 27-1, 27-2, 27-3, and 27-4 of the processing chamber 24 are respectively arranged in each of the temperature adjustment parts 72-1, 72-2, 72-3, and 72-4 which are the heating areas of the heating device 12, and measure the temperature of the substrate 18 corresponding to the temperature adjustment parts 72-1, 72-2, 72-3, and 72-4 respectively.

[0041] The first to fourth reaction tube temperature sensors 70-1, 70-2, 70-3, and 70-4 are disposed in the cylindrical space 34 corresponding to the temperature adjustment portions 72-1, 72-2, 72-3, and 72-4, respectively, and measure the temperature distribution inside the cylindrical space 34. In the present embodiment, since the sensors are disposed near the reaction tube 16, the temperature of the reaction tube 16 can be measured.

[0042] The gas flow rate regulator 62 regulates the flow rate of the gas introduced into the reaction tube 16 via a gas introduction nozzle (not shown).

[0043] The flow rate sensor 64 measures the flow rate of the gas supplied into the reaction tube 16 through the gas introduction nozzle.

[0044] The pressure regulating device 66 regulates the pressure in the reaction tube 16 .

[0045] The pressure sensor 68 measures the pressure in the reaction tube 16 .

[0046] (Control device)

[0047] The control device 60 includes a temperature control device 74, a heater driving device 76 as an example of a power supply unit of the present disclosure, a flow control device 78, and a pressure control device 80. The control device 60 controls the various components of the semiconductor manufacturing apparatus as the substrate processing apparatus 10 based on the set values ​​of temperature, pressure, and flow rate set by the control computer 82 through these components.

[0048] The temperature control device 74 controls the power supplied by the heater driving devices 76-1, 76-2, 76-3, 76-4 to each of the temperature adjustment parts 72-1, 72-2, 72-3, 72-4, respectively, so that the temperature of the substrate 18 of each of the temperature adjustment parts 72-1, 72-2, 72-3, 72-4 measured by the first to fourth substrate temperature sensors 27-1, 27-2, 27-3, 27-4, respectively, becomes the temperature set for each of the temperature adjustment parts 72-1, 72-2, 72-3, 72-4 by the control computer 82. The heater driving device 76 of this embodiment may be added to the heating part, and the heater driving device 76 and the heater wire 30a are an example of the heating mechanism disclosed in the present invention.

[0049] The flow control device 78 controls the gas flow regulator 62 so that the gas flow value measured by the flow sensor 64 becomes equal to the gas flow value set by the control computer 82 , and controls the flow rate of the gas introduced into the reaction tube 16 of the processing chamber 24 .

[0050] The pressure control device 80 controls the pressure regulating device 66 so that the pressure inside the reaction tube 16 measured by the pressure sensor 68 becomes equal to the pressure value set by the control computer 82 , thereby controlling the pressure inside the reaction tube 16 of the processing chamber 24 .

[0051] [Hardware structure]

[0052] Figure 4 This is a diagram showing the structure of the control computer 82.

[0053] The control computer 82 includes a computer main body 88 including a CPU 84 and a memory 86, a communication IF (Interface) 90, a recording device 92, and a display and input device 94. That is, the control computer 82 includes components of a general computer.

[0054] The CPU (Central Processing Unit) constitutes the core of the operation unit, executes the control program stored in the recording device 92, and executes the recipe (for example, process recipe) recorded in the recording device 92 according to the instruction from the display and input device 94.

[0055] In addition, as the recording medium 96 for storing the CPU operation program, etc., ROM (Read Only Memory), EEPROM (Electrically Erasable Programmable Read Only Memory), flash memory, hard disk, etc. are used. Here, RAM (Random Access Memory) serves as a work area of ​​the CPU, etc.

[0056] In the embodiment of the present disclosure, although the control computer 82 is used as an example for explanation, it is not limited to this, and a common computer system can be used for implementation. For example, the above-mentioned processing can also be performed by installing the program for performing the above-mentioned processing from a recording medium 96 such as a floppy disk, CD-ROM, USB, etc., which stores the program to perform the above-mentioned processing, into a general-purpose computer.

[0057] In addition, a communication IF 90 such as a communication line, a communication network, or a communication system may be used. In this case, for example, the program may be posted on a bulletin board of the communication network and provided by being superimposed on a carrier wave via the network. Then, the program provided in this way is started and executed in the same manner as other application programs under the control of the OS (Operating System), thereby performing the above-mentioned processing.

[0058] For example, the control program stored in the recording device 92 is a program executed in the substrate processing apparatus 10 having the control computer 82 as a control unit, and the control unit is configured to control the heating by the heating unit 30 in the reaction tube 16 and the cooling of the reaction tube 16 by the cooling mechanism such as the exhaust fan 54 that supplies the cooling gas for cooling the reaction tube 16, so that the temperature of the substrate 18 in the reaction tube 16 becomes the processing temperature. Through this program, the control computer 82 executes the process of supplying a certain power to the heating unit 30 so that the temperature of the heater wire 30a included in the heating unit 30 becomes higher than the processing temperature, and the process of causing the cooling mechanism such as the exhaust fan 54 to supply the cooling gas to the reaction tube 16.

[0059] Thus, by applying a predetermined power to the heater wire 30a, the temperature of the heater wire 30a can be increased above the processing temperature of the substrate 18, and the ratio of short wavelengths among various wavelengths radiated from the heater wire 30a can be increased. Furthermore, by supplying cooling gas from the cooling mechanism to the reaction tube 16, the reaction tube 16 can be cooled while applying power to the heater wire 30a.

[0060] Next, use Fig. 6A An example of temperature control performed when the substrate is processed by the substrate processing apparatus 10 will be described.

[0061] Fig. 6A A graph showing the temperature changes of each part (heater wire 30a, reaction tube 16, substrate 18, wafer boat 20), a graph showing the changes in heater output (i.e., the output of heater wire 30a), and a graph showing the blower frequency (motor speed of exhaust fan 54).

[0062] In the temperature control of this embodiment, as an example, Fig. 6A As shown, after the substrate 18 held in the wafer boat 20 is placed in the furnace (wafer boat loading is completed), the reaction tube 16 is efficiently heated to increase the temperature rise rate of the substrate 18 in the reaction tube 16, in other words, to increase the heating speed, and feedback control is performed. Fig. 6A An overview of temperature control in.

[0063] Step (1) (Heating step)

[0064] First, in order to quickly raise the temperature of the heater wire 30a to a stable target temperature (processing temperature) when the substrate 18 is completely removed from the wafer boat, the heater wire 30a is controlled to have a high output (for example, full power (maximum output of the heating unit 30)) and to maintain the high output for a predetermined time. For example, the heater wire 30a is controlled to have a certain output at full power.

[0065] The high-output power is not limited to the maximum output of the heating unit 30 but is a power greater than the power required to maintain the processing temperature of the substrate 18 with the processing gas or the like, and the value of the power is preset in the device.

[0066] In addition, the processing temperature in this specification refers to the temperature of the substrate 18 , but may also refer to the temperature of the processing chamber 24 formed in the reaction tube 16 .

[0067] Here, the configuration is such that when the heating unit 30 is maintained at a high output or higher for a predetermined time, the temperature of the heater wire 30a rises to a preset temperature (first set temperature). The set temperature is determined to be a temperature at which the temperature of the substrate 18 does not exceed the processing temperature (does not overshoot). The details of the set temperature will be described later.

[0068] However, the temperature of the heater wire 30a of the heating unit 30 can be easily and quickly controlled by the power supplied to the heater wire 30a, while it is difficult to control the temperature of the reaction tube 16 and quickly change the temperature like the heater wire 30A. In other words, it is difficult to control the secondary radiation (relatively long-wavelength infrared rays) from the reaction tube 16.

[0069] Therefore, in order to minimize the temperature rise of the reaction tube 16, at least in step (1), the substrate 18 is heated while the reaction tube 16 is cooled by supplying cooling gas. That is, in the present embodiment, in order to make the heater wire 30a high-power, the primary radiation (largely short wavelength) from the heater wire 30a, which is easy to control, is given to the substrate 18, and the secondary radiation from the reaction tube 16 is suppressed, and the reaction tube 16 is cooled while the substrate 18 is heated by the heater wire 30a. As described above, the cooling of the reaction tube 16 can be efficiently performed by operating the exhaust fan 54 to blow the cooling gas into the reaction tube 16 from the blowing hole 35.

[0070] In this way, by applying a predetermined power to the heater wire 30a, the temperature of the heater wire 30a is made higher than the processing temperature of the substrate 18, thereby increasing the proportion of short wavelengths (for example, wavelengths smaller than 4 μm) among the various wavelengths radiated from the heater wire 30a. In addition, by supplying cooling gas to the reaction tube 16, that is, by a cooling gas supply process, the reaction tube 16 can be cooled in a manner that suppresses the secondary radiation of long wavelengths from the reaction tube 16 while applying power to the heater wire 30a. Therefore, the secondary radiation of long wavelengths from the reaction tube 16 can be suppressed, and the amount of short wavelength radiation waves that pass through the reaction tube 16 can be increased, so that the inside of the reaction tube 16 can be heated efficiently, and the temperature rise rate of the substrate 18 in the reaction tube 16 can be increased, in other words, the heating speed can be increased.

[0071] Process (2) (Adjustment process)

[0072] This is a process for adjusting the temperature of the substrate 18 to reach a stable target temperature (processing temperature) after process (1). Specifically, the power supply to the heater wire 30a is adjusted. For example, the power supply can also be made zero. In addition, the blower frequency is adjusted. When the temperature of the substrate 18 is close to the processing temperature, the blower frequency is suppressed and the supply of cooling gas is adjusted. Thus, by performing feedback control on both the heater wire 30a and the blower frequency, the temperature of the substrate 18 is controlled so as to converge to the processing temperature without exceeding it.

[0073] Step (3) (Stabilization step)

[0074] After step (2), when the temperature of the substrate 18 reaches the processing temperature, temperature control is performed by feedback control in such a manner that the temperature of the substrate 18 is stabilized at the stable target temperature (the temperature of the substrate 18 is measured and the output of the heater wire 30a is controlled). In step (3), the temperature control may be performed while continuously supplying a low-temperature cooling gas to cool the reaction tube 16. That is, the cooling gas may be supplied by turning on the blower.

[0075] In addition, in the above steps (1) and (2), the temperature rise of the substrate 18 is implemented while feedback control is performed, thereby also following the variable factors of the surrounding environment. For example, as in step (1), when the temperature setting value is specified in such a way that the output of the heater wire 30a becomes a high output, even if the variable factor has an influence, the time for the heater wire 30a to become a high output can be adjusted by performing feedback control. In step (2), the target stable temperature of the substrate 18 is used as the temperature setting value for feedback control, thereby adjusting the standby time until the temperature of the substrate 18 reaches the target stable temperature.

[0076] In addition, the heater wire 30a for heating the substrate 18 can be divided into a plurality of regions (a plurality of heating regions) for control. In this temperature control method, steps (1), (2), and (3) are also independently controlled by region, thereby controlling the temperature of a plurality of substrates 18 placed on the wafer boat 20 to be uniform.

[0077] (Supplement of temperature control)

[0078] In the adjustment process of adjusting the temperature of the substrate 18, the supply amount of the cooling gas and the power supplied to the heater wire 30a are adjusted to control the substrate 18 to the processing temperature, thereby increasing the temperature increase rate of the substrate 18 arranged in the reaction tube 16, and shortening the time from the start of the temperature increase to the stabilization of the temperature in the reaction tube 16 at the processing temperature. Thus, for example, the substrate temperature can be stabilized at the processing temperature in a short time.

[0079] like Fig. 6A As shown, by starting the heating process performed by the heater wire 30a and the cooling gas supply process for cooling the reaction tube 16 at the same time, the temperature rise rate of the substrate 18 can be increased compared to the case where the cooling gas supply process is started slower than the heating process, and the substrate temperature can be stabilized at the processing temperature in a short time.

[0080] Furthermore, by supplying the predetermined electric power to the heater wire 30 a in the temperature raising process at full power, the substrate 18 can be heated more quickly by short-wavelength radiation than when the process is not performed at full power.

[0081] By continuing to supply a predetermined amount of power to the heater wire 30a during the heating process until the temperature of the heater wire 30a reaches a set temperature higher than the processing temperature, the reaction tube 16 can be efficiently heated, for example, the heating rate of the substrate 18 in the reaction tube 16 can be increased.

[0082] like Fig. 6A As shown in FIG. 1 , after the temperature of the heater wire 30a in the heating process reaches a set temperature higher than the processing temperature, the power is reduced from a certain power, thereby allowing the temperature of the heater wire 30a to return from a temperature higher than the processing temperature to the original temperature before the temperature in the reaction tube 16 reaches the processing temperature, that is, the temperature can be reduced. Figure 6B As shown, it is possible to suppress the temperature from becoming excessively high (indicated by the upper graph line), and the processing temperature can be stabilized.

[0083] When the temperature of the heater wire 30a in the temperature raising process becomes higher than the set temperature of the processing temperature, the power supply to the heater wire 30a is stopped, so that the temperature of the heater wire 30a returns from a temperature higher than the processing temperature to the original temperature before the temperature in the reaction tube 16 becomes the processing temperature, that is, the temperature is lowered. Thus, it is possible to suppress the temperature from becoming excessively high and stabilize the processing temperature.

[0084] The supply of the prescribed power to the heater wire 30a in the temperature raising step is continued until the temperature of the heater wire 30a reaches a set temperature higher than the processing temperature, but it is preferable to set the set temperature so that a short wavelength can be obtained from the radiation wave of the heater wire, that is, the heater wire 30a is higher than the processing temperature of the substrate 18. Therefore, the inside of the reaction tube 16 (especially the substrate 18) can be efficiently heated by the radiation wave of a short wavelength, and for example, the temperature raising rate of the substrate 18 in the reaction tube 16 can be improved.

[0085] The set temperature of the heater wire 30a is preferably set to 450°C or higher (however, not necessarily). When the temperature of the heater wire 30a is less than 450°C, short wavelengths (for example, wavelengths smaller than 4 μm) among various wavelengths radiated from the heater wire 30a may not be sufficiently obtained. As a result, the long-wavelength infrared rays radiated from the heater wire 30a are absorbed by the reaction tube 16, and the reaction tube 16 is heated, while the substrate 18 disposed in the reaction tube 16 may not be sufficiently heated.

[0086] In contrast, when the temperature of the heater wire 30a reaches 450°C or higher, the ratio of short wavelengths among the various wavelengths radiated from the heater wire 30a increases. The radiation waves of short wavelengths pass through the reaction tube 16 and are absorbed by the substrate 18 disposed in the reaction tube 16, thereby contributing to improving the heating efficiency. Moreover, when the temperature of the heater wire 30a reaches, for example, 800°C or higher, the various wavelengths radiated from the heater wire 30a mostly become short wavelengths. In this way, the temperature of the heater wire 30a is increased, thereby radiating more short-wavelength infrared rays, and the radiated short-wavelength infrared rays pass through the reaction tube 16 and are absorbed by the substrate 18 disposed in the reaction tube 16, thereby improving the heating efficiency.

[0087] The supply time of a certain amount of power to the heater wire 30a can be determined according to the processing temperature. When the temperature in the reaction tube 16 is raised while the temperature of the heater wire 30a is higher than the processing temperature, for example, the proportion of short-wavelength infrared rays in the infrared rays from the heater wire 30a can be increased, and the short-wavelength infrared rays pass through the reaction tube 16 and are absorbed by the substrate 18 disposed in the reaction tube 16, so that the heating efficiency can be improved. In addition, the temperature of the heater wire 30a can be lowered from a set temperature higher than the processing temperature to an original temperature, for example, to the processing temperature.

[0088] In this way, by determining the supply time of a certain amount of electric power to the heater wire 30 a according to the processing temperature, it is possible to achieve both heating efficiency and temperature stabilization.

[0089] The supply amount of the cooling gas in the cooling gas supply process can be controlled until the temperature of the heater wire 30a reaches the set temperature. Thus, the reaction tube 16 is cooled until the temperature of the heater wire 30a reaches the set temperature, and the radiation of long-wavelength infrared rays from the reaction tube 16 is suppressed until the temperature of the heater wire 30a reaches the set temperature.

[0090] The supply amount of the cooling gas in the cooling gas supply process can be controlled until the temperature of the heater wire 30a reaches the processing temperature from the temperature at the time of wafer boat loading completion. Thus, the reaction tube 16 can be cooled before the temperature of the heater wire 30a reaches the set temperature, and even if the temperature of the heater wire 30a reaches the set temperature higher than the processing temperature, the radiation of long-wavelength infrared rays from the reaction tube 16 can be suppressed.

[0091] The supply amount of the cooling gas in the cooling gas supply step may be reduced after the temperature in the reaction tube 16 reaches the processing temperature. This can prevent the temperature of the substrate 18 from being excessively high, and stabilize the processing temperature.

[0092] By making the temperature of the heater wire 30a at the beginning of the temperature rise in the reaction tube 16 and the period when the temperature in the reaction tube 16 reaches the processing temperature the same as the processing temperature, the long-wavelength secondary radiation from the reaction tube 16 can be suppressed, and the amount of short-wavelength radiation waves passing through the reaction tube 16 can be increased, thereby efficiently heating the inside of the reaction tube 16.

[0093] The processing temperature can be lower than the standby temperature of the heater wire 30a maintained in a state where no substrate 18 is arranged in the reaction tube 16 (for example, a standby state before the substrate 18 held in the wafer boat 20 is arranged in the furnace). Therefore, in the temperature control in the process in the low temperature region lower than the standby temperature of the heater wire 30a maintained in a state where no substrate 18 is arranged in the reaction tube 16, the proportion of short wavelengths, for example, wavelengths less than 4 μm, among various wavelengths radiated from the heater wire 30a can be increased. Therefore, for example, infrared rays with a large proportion of short wavelengths from the heater wire 30a can be transmitted through the reaction tube 16, so that the temperature rise rate of the substrate in the reaction tube 16 is increased.

[0094] exist Figure 7, the following example is shown: without feedback control, the heater wire 30a is made high output for a predetermined time, and then the heater wire 30a is made zero and maintained for a predetermined time, and then feedback control is performed. Furthermore, when the temperature of the substrate 18 exceeds the stable target temperature (above the allowable range), the time (predetermined time) for making the output of the heating unit 30 high output is shortened, and when the temperature of the substrate 18 is lower than the stable target temperature, the time (predetermined time) for making the output of the heating unit 30 high output is increased, thereby determining the optimal predetermined time. In addition, the blower output is constant.

[0095] In addition, Fig. 6A In FIG. 1 , it is shown that the step (I) is made constant at high output and the step (II) is made constant at low output (in Figure 7 For example, the example of zero power). Fig. 6A When the time of process (I) and process (II) is set, the operator with a certain degree of knowledge and skills can easily derive the optimal prescribed time. In addition, although feedback control is performed from process (III), feedback control can also be performed on the heating unit 30, or the heating unit 30 and the blower from the middle of process (II) as in the present embodiment.

[0096] Below, using Figure 8 and Fig. 9 An example of film forming processing performed by the substrate processing apparatus 10 will be described. This example is an example in which the standby temperature T0 < the target temperature T1 is satisfied.

[0097] Step S1 is a process for stabilizing the temperature in the furnace at a relatively low temperature T0. In step S1, the substrate 18 has not yet been inserted into the furnace.

[0098] Step S2 is a process of inserting the substrate 18 held in the wafer boat 20 into the furnace. Since the temperature of the substrate 18 is lower than the temperature T0 in the furnace at this moment, the substrate 18 is inserted into the furnace, and as a result, the temperature in the furnace temporarily drops below T0. However, the temperature in the furnace is stabilized at T0 again after a short period of time by the temperature control device 74 or the like.

[0099] Step S3 is a process of gradually raising the temperature in the furnace from the temperature T0 to a target temperature T1 for performing a film forming process on the substrate 18 .

[0100] Step S4 is a process of maintaining and stabilizing the temperature in the furnace at a target temperature T1 in order to perform a film forming process on the substrate 18 .

[0101] Step S5 is a process for gradually lowering the temperature in the furnace from the temperature T1 to a lower temperature T0 again after the film forming process is completed.

[0102] Step S6 is a process of taking out the substrate 18 after the film formation process from the furnace together with the wafer boat 20 .

[0103] When there are still unprocessed substrates 18 to be subjected to film formation processing, the processed substrates 18 on the wafer boat 20 are replaced with unprocessed substrates 18, and a series of processing of steps S1 to S6 is repeated.

[0104] In the processing of steps S1 to S6, the temperature in the furnace is within a predetermined small temperature range relative to the target temperature, and after a stable state is obtained in which the state continues for a predetermined time, the process proceeds to the next step. Alternatively, recently, in order to increase the number of substrates 18 to be film-formed in a certain period of time, the process may proceed to the next step if a stable state is not obtained in steps S1, S2, S5, S6, etc.

[0105] Here, step S3 (heating up) and step S5 (cooling down) are not essential, and are implemented because the standby temperature T0 is different from the target temperature T1 (processing temperature). Therefore, when the standby temperature T0 is the same as the target temperature T1 (processing temperature), step S3 (heating up) and step S5 (cooling down) are omitted. In addition, when the target temperature T1 is lower than the standby temperature T0, step S3 (heating up) can be omitted.

[0106] [Other embodiments]

[0107] The present disclosure is not limited to semiconductor manufacturing devices, but can also be applied to devices that process glass substrates such as LCD devices. For example, in devices that heat glass substrates with heater wires, the same effects as the present disclosure can be obtained.

[0108] In addition, the present disclosure relates to semiconductor manufacturing technology, and in particular to a heat treatment technology in which a treatment is performed while a substrate to be processed is accommodated in a processing chamber and heated by a heating device. For example, the present disclosure can be used as an effective technology in a substrate processing device that is used to perform oxidation treatment, diffusion treatment, reflow for carrier activation and flattening after ion implantation, annealing, and film formation treatment involving a thermal CVD reaction on a semiconductor substrate for manufacturing a semiconductor integrated circuit device (semiconductor device, semiconductor equipment).

[0109] The term "substrate" used in this specification may refer to the substrate itself or a laminate of the substrate and predetermined layers and films formed on the surface thereof.

[0110] The disclosure of Japanese Patent Application No. 2022-209067 filed on December 26, 2022 is incorporated herein by reference in its entirety. All documents, patent applications, and technical specifications described in this specification are incorporated herein by reference to the same extent as if each document, patent application, and technical specification were specifically and separately described as being incorporated by reference.

[0111] Industrial Applicability

[0112] The present invention can be applied to a substrate processing apparatus having a plurality of substrate holders and processing substrates held by the substrate holders, and can be applied to a substrate processing apparatus that processes substrates at a low temperature in particular.

[0113] Description of Reference Numerals

[0114] 16 reaction tubes, 18 substrates.

Claims

1. A temperature control method, comprising: a process temperature setting step of controlling heating and cooling in a reaction tube so that the temperature of a substrate arranged in the reaction tube becomes a preset process temperature, characterized in that: The processing temperature setting step comprises: a temperature raising step of supplying a certain amount of electric power so that the temperature of a heater wire disposed outside the reaction tube is higher than the processing temperature; and The cooling gas supplying step is to supply cooling gas to the reaction tube.

2. The temperature control method according to claim 1, characterized in that: The temperature control method further includes: an adjustment step of adjusting the supply amount of the cooling gas and the electric power to control the temperature of the substrate to the processing temperature.

3. The temperature control method according to claim 1, characterized in that: The temperature raising step and the cooling gas supplying step are started simultaneously.

4. The temperature control method according to claim 2, characterized in that: The adjustment step and the cooling gas supply step are performed simultaneously.

5. The temperature control method according to claim 1, characterized in that: The supply of the constant power in the temperature increasing step is continued until the temperature of the heater wire reaches a set temperature higher than the processing temperature.

6. The temperature control method according to claim 1, characterized in that: The temperature control method controls such that when the temperature of the heater wire in the temperature raising step becomes a set temperature higher than the processing temperature, the electric power supplied from the constant electric power source is reduced.

7. The temperature control method according to claim 6, characterized in that: When the temperature of the heater wire in the temperature raising step becomes higher than a set temperature of the processing temperature, the supply of the electric power is stopped.

8. The temperature control method according to claim 5, characterized in that: The set temperature is set to obtain a short wavelength of the radiation wave from the heater wire.

9. The temperature control method according to claim 2, characterized in that: The temperature control method is configured to reduce the temperature of the heater wire to the processing temperature before the adjustment step is completed.

10. The temperature control method according to claim 5, characterized in that: The supply time of the constant power is determined according to the processing temperature.

11. The temperature control method according to claim 1, characterized in that: The supply amount of the cooling gas in the cooling gas supplying step is controlled until the temperature of the heater wire reaches a set temperature higher than the processing temperature.

12. The temperature control method according to claim 1, characterized in that: The supply amount of the cooling gas in the cooling gas supplying step is controlled from before the temperature of the heater wire becomes a set temperature higher than the processing temperature until the temperature reaches the processing temperature.

13. The temperature control method according to claim 1, characterized in that: When the temperature in the reaction tube reaches near the processing temperature, the supply amount of the cooling gas in the cooling gas supplying step is reduced.

14. The temperature control method according to claim 1, characterized in that: The temperature of the heater wire at the start time of raising the temperature in the reaction tube and at the time when the temperature in the reaction tube reaches the treatment temperature is the same as the treatment temperature.

15. The temperature control method according to claim 14, characterized in that: The processing temperature is lower than a standby temperature of the heater wire maintained in a state where the substrate is not arranged in the reaction tube.

16. A method for manufacturing a semiconductor device, characterized in that: The manufacturing method comprises the step of setting the temperature of the substrate to a processing temperature by the temperature control method described in claim 1. The substrate disposed in the reaction tube is processed while maintaining the processing temperature.

17. A program executed by a substrate processing apparatus having a control unit, wherein the control unit is configured to control heating of a reaction tube by a heating unit and cooling of the reaction tube by a cooling mechanism for supplying a cooling gas for cooling the reaction tube, and can make the temperature of the substrate in the reaction tube reach a processing temperature, characterized in that: The program causes the substrate processing apparatus to execute, through a computer: A process of supplying a predetermined power to the heating unit so that the temperature of the heater wire included in the heating unit becomes higher than the processing temperature; and A process of causing the cooling mechanism to supply cooling gas to the reaction tube.

18. A substrate processing device, characterized in that: have: A reaction tube, in which a substrate is arranged; a heating mechanism including a heating portion for heating the substrate in the reaction tube and a power supply portion for supplying power to the heating portion; a cooling mechanism for supplying cooling gas to the reaction tube; and a control unit configured to control heating in the reaction tube and cooling of the reaction tube so as to make the temperature of the substrate in the reaction tube reach a processing temperature, The control unit is configured to at least execute: A process in which the temperature of the heater wire included in the heating unit is made higher than the processing temperature by supplying a predetermined electric power through the electric power supply unit; and A process of supplying the cooling gas to the reaction tube by the cooling mechanism.

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