Electronic system comprising radar antenna and transmitting device

Abstract

An electronic system (10) comprises a radar antenna (105) configured to emit electromagnetic radiation at a wavelength [lambda] and an electrical device (100). The invention relates to an electrical device (100) arranged in the emission direction of a radar antenna (105), the electrical device (100) comprising a dielectric layer (102) and a metal wiring (108) for contacting elements of the electrical device (100). The thickness d of the dielectric layer (102) measured in the vertical direction is determined such that the emitted electromagnetic radiation forms at least one standing wave within the dielectric layer (102) having at least one electric field intensity minimum. The metal wiring (108) is arranged in a horizontal layer of the dielectric layer (102), and the vertical position of the metal wiring (108) is determined such that it corresponds to a minimum value of the electric field intensity of the electromagnetic radiation of the wavelength lambda.

Description

[0001] Radar modules are increasingly being used in automotive applications, for example. Often, concepts are being developed in which the radar module can be a lighting module at the same time, or in which the radar module is integrated into a lighting module. For example, radar modules are being developed in which the cover of the radar module can be in the form of a logo and can also be illuminated. For example, different parts of the cover can be controlled individually.

[0002] The object of the present invention is to provide an improved electronic system. In addition, another object of the present invention is to provide an improved transmitting device.

[0003] According to an embodiment, the above objects are achieved by what is claimed according to the independent claim. Further developments are defined in the dependent claims.

[0004] According to an embodiment, an electronic system includes a radar antenna configured to emit electromagnetic radiation with a wavelength of λ and an electrical device. The electrical device is arranged in the emission direction of the radar antenna. The electrical device includes a dielectric layer and metal wiring for contacting elements of the electrical device. The thickness d of the dielectric layer measured in the vertical direction is determined so that the emitted electromagnetic radiation forms at least one standing wave with at least one minimum value of the electric field strength in the dielectric layer.

[0005] The metal wiring is arranged in a horizontal layer of the dielectric layer, and the vertical position of the metal wiring is determined so that it corresponds to a minimum value of the electric field intensity of electromagnetic radiation having a wavelength λ. For example, the electromagnetic radiation is transmitted through the dielectric layer in a vertical direction.

[0006] Due to this configuration, the interaction of emitted electromagnetic radiation and metal wiring can be reduced.

[0007] For example, the thickness d of the dielectric layer can be determined as:

[0008] d=λ*m / (n*2),

[0009] Wherein, m represents an integer of m>0, and n represents the refractive index of the dielectric layer. For example, when the dielectric layer includes only a single layer, this equation may hold. According to another embodiment, the dielectric layer may include a plurality of dielectric layers, forming a dielectric layer stack. In this case, the thickness of the dielectric layer stack capable of forming a standing wave may be determined, for example, by simulation.

[0010] The thickness d of the dielectric layer measured in the vertical direction is determined so that the emitted electromagnetic radiation forms at least one standing wave with at least one minimum of electric field strength in the dielectric layer, which can mean that m>0 in the above formula. As defined above, at least one standing wave has at least one minimum of electric field strength in the dielectric layer. In other words, it is intended that at least one minimum is not located at the interface of adjacent elements outside the dielectric layer (stack), but is located inside the dielectric layer (stack). The term "minimum of electric field strength" can also refer to the location of destructive interference.

[0011] For example, the metal wiring includes a metal mesh. The thickness of the metal mesh may be 30 nm to 100 μm, for example, 0.2 μm to 10 μm, or for example, 1 to 3 μm.

[0012] The width of each metal wire forming the metal grid may be 1 to 100 μm, for example 8 to 25 μm.

[0013] According to an embodiment, the period of the metal grid is less than λ / n, or even less than 0.5*λ / n. In addition, the period of the metal grid can be greater than 0.1*λ / n. Therefore, the transmittance of the emitted electromagnetic radiation can be increased. The grid does not need to consist of a periodic arrangement of single lines. When the distance between adjacent lines varies, the term "period" refers to the average distance between adjacent lines or the mode of the distance between adjacent lines.

[0014] According to an embodiment, an electrical device comprises an optoelectronic semiconductor device. The optoelectronic semiconductor device comprises a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active region for generating or absorbing electromagnetic radiation. The active region is arranged between the first semiconductor layer and the second semiconductor layer.

[0015] For example, the metal grid is electrically connected to the first semiconductor layer or the second semiconductor layer. In more detail, the first semiconductor layer or the second semiconductor layer can be electrically connected to the voltage terminal through the metal grid. For example, a first portion of the metal grid can be connected to the first semiconductor layer, and a second portion of the metal grid can be connected to the second semiconductor layer. The first semiconductor layer can be electrically connected to the first voltage terminal through the first portion of the metal grid. The second semiconductor layer can be electrically connected to the second voltage terminal through the second portion of the metal grid.

[0016] According to an embodiment, the dielectric layer may include a first dielectric layer and a second dielectric layer, and the metal layer is disposed between the first dielectric layer and the second dielectric layer.

[0017] For example, at least one of the first dielectric layer and the second dielectric layer may include a multilayer stack.For example, the first and / or second dielectric layer may include multiple layers made of at least two different materials.

[0018] According to an embodiment, the vertical position v of the metal wiring can be determined as v = λ*(k + 0.5) / (2*n), where k < m. For example, in the case of a single dielectric layer, the vertical position v can be determined in this way. According to another embodiment, especially when the dielectric layer includes a plurality of dielectric layers forming a dielectric layer stack, the vertical position of the metal wiring can be determined by wave optics simulation to minimize the electromagnetic interaction between the metal wiring and the electromagnetic radiation.

[0019] According to another embodiment, the transmitting device includes a radar antenna, a dielectric layer, and a metal layer; the radar antenna is configured to transmit electromagnetic radiation with a wavelength of λ, the dielectric layer is arranged in the transmitting direction of the radar antenna, and the thickness of the metal layer is less than 500 nm. The thickness d of the dielectric layer measured in the vertical direction is determined such that the electromagnetic radiation forms at least one standing wave with at least one minimum value of the electric field strength within the dielectric layer. The metal layer is arranged in the horizontal layer of the dielectric layer, and the vertical position of the metal layer is determined such that it corresponds to the minimum value of the electric field strength of the electromagnetic radiation with a wavelength of λ.

[0020] For example, the thickness of the metal layer can be less than the skin depth of the metal layer, and the skin depth is defined by the frequency of the electromagnetic radiation and the specific conductivity of the metal. Generally, the thickness of the metal layer can be less than several hundred nm, such as less than 500 nm or less than 300 nm.

[0021] For example, the thickness d of the dielectric layer can be determined such that d = λ*m / (n*2), where m represents an integer and n represents the refractive index of the dielectric layer. When the dielectric layer includes a single dielectric layer, this equation can be satisfied.

[0022] For example, the vertical position v of the metal layer is determined as v = λ*(k + 0.5) / (2*n), where k < m. In a manner similar to that discussed above, when the dielectric layer includes multiple layers, simulation can be used to determine the vertical position.

[0023] The accompanying drawings are included to further understand the embodiments of the present invention, and the drawings are incorporated into and form a part of this specification. The drawings illustrate the embodiments of the present invention and are used together with the specification to explain the relevant principles. By referring to the following detailed description, other embodiments of the present invention and many expected advantages will become more readily understood. The elements in the drawings are not necessarily proportional to each other. The same reference numerals represent corresponding similar components.

[0024] Figure 1A A schematic diagram of an electronic system according to an embodiment is shown.

[0025] Figure 1B Elements of the metal wiring are shown.

[0026] Figure 2AA cross-sectional view of a dielectric layer is shown.

[0027] Figure 2B It is a schematic diagram for explaining details according to the embodiment.

[0028] Figure 2C It is a schematic diagram for explaining the effect of the embodiment.

[0029] Figure 3A Another example of a dielectric layer is shown.

[0030] Figure 3B Examples of dielectric layers are further shown.

[0031] Figure 4A A cross-sectional view of an electronic system or transmitting device according to an embodiment is shown.

[0032] Figure 4B An example of an electronic system is shown.

[0033] In the detailed description below, reference is made to the accompanying drawings, which form a part of this specification and show, by way of example, specific embodiments in which the invention may be practiced. In this regard, directional terms such as "top", "bottom", "front", "rear", "above", "on", "above", "head", "tail", etc. are used with reference to the orientation of the drawings being described. Since the components of embodiments of the invention can be placed in many different orientations, the directional terms are used for illustrative purposes only and are not intended to be limiting. It should be understood that other embodiments may be employed and that structural or logical changes may be made without departing from the scope defined by the claims.

[0034] The description of these embodiments is non-limiting. In particular, elements of the embodiments described below may be combined with elements of different embodiments.

[0035] The terms "lateral" and "horizontal" as used in this specification intend to describe an orientation parallel to a first surface of a substrate or semiconductor body. This may be, for example, the surface of a wafer or a die.

[0036] The term “vertical” as used in this specification intends to describe an orientation arranged perpendicular to a first surface of a substrate or semiconductor body.

[0037] Unless otherwise stated, the term "wavelength λ" is intended to designate the wavelength in a vacuum.

[0038] The terms "coupled" and / or "electrically coupled" used in this specification do not mean that all elements are directly coupled together, but intermediate elements may be provided between the "coupled" or "electrically coupled" elements. The term "electrically connected" is intended to describe a low-ohmic electrical connection between electrically connected elements.

[0039] Figure 1A A schematic diagram of an electronic system 10 according to an embodiment is shown. The electronic system 10 includes a radar antenna 105 and an electrical device 100, the radar antenna 105 being configured to emit electromagnetic radiation having a wavelength λ. The electrical device 100 is arranged in the emission direction of the radar antenna. The electrical device 100 includes a dielectric layer 102 and a metal wiring 108 for contacting elements of the electrical device 100. The thickness d of the dielectric layer 102 measured in a vertical direction (e.g., z direction) is determined so that the electromagnetic radiation emitted by the radar antenna forms at least one or more standing waves having at least one minimum value of electric field strength in the dielectric layer 102. For example, when the dielectric layer 102 includes or consists of a single dielectric layer, its thickness can be determined as:

[0040] d=λ*m / (n*2) wherein m represents an integer greater than 0, and n represents the refractive index of the dielectric layer.

[0041] When dielectric layer 102 includes multiple dielectric layers, its thickness may be determined using, for example, simulations.

[0042] The metal wiring 108 is arranged in a horizontal layer of the dielectric layer 102. The vertical position v of the metal wiring is determined so that it corresponds to a minimum value of the electric field intensity of electromagnetic radiation having a wavelength λ.

[0043] For example, the radar antenna 105 may be a component of a commonly known radar device. The radar antenna 105 may be configured to transmit a typical wavelength, such as 3.9 mm or 12.5 mm. The distance s between the radar antenna 105 and the electrical device 100 may be greater than the emission wavelength of the radar antenna 105. The dielectric material of the dielectric layer 102 may be a commonly known dielectric material, such as glass, PVB (polyvinyl butyral) or PET (polyethylene terephthalate). It should be clearly understood that any other dielectric material may be used. The dielectric material is transparent to the electromagnetic radiation emitted by the radar antenna. The following will refer to Figure 2A The thickness d of the dielectric layer 102 is illustrated. The vertical position v corresponds to the distance v between the metal wiring 108 and the first main surface 125 of the dielectric layer 102. The first main surface 125 of the dielectric layer 102 faces the radar antenna 105. The radar antenna emits electrical radiation in a vertical direction.

[0044] The electrical device 100 may include an optoelectronic semiconductor device 101. For example, the optoelectronic semiconductor device 101 may be implemented as an LED (“light emitting diode”) or a photodetector. As is clearly understood, the electrical device may include any other type of semiconductor device. Furthermore, the optoelectronic semiconductor device may be implemented as any other type of optoelectronic device. Figure 1A An example of the structure of an optoelectronic semiconductor device is also shown. The optoelectronic semiconductor device 101 may include a first semiconductor layer 110 of a first conductivity type (e.g., p-type), a second semiconductor layer 112 of a second conductivity type (e.g., n-type), and an active region 113 for generating or absorbing electromagnetic radiation. The active region 113 is arranged between the first semiconductor layer 110 and the second semiconductor layer 112. A detailed description is omitted here. A single optoelectronic semiconductor device may be mounted above the second main surface 126 of the dielectric layer 102. The second main surface 126 is located on a side away from the radar antenna 105. According to another embodiment, the optoelectronic semiconductor device 101 may be embedded in the dielectric layer 102. For example, the horizontal dimension s of the single optoelectronic semiconductor device 101 may be less than 1 mm, for example, less than 200 μm or less than 30 μm.

[0045] The metal wiring 108 may be implemented as a grid, such as Figure 1A The metal wiring 108 can be configured to electrically connect the optoelectronic semiconductor device 101. For example, the first semiconductor layer 101 or the second semiconductor layer 102 can be electrically connected to the metal wiring 108. For example, the first semiconductor layer 101 or the second semiconductor layer 102 can be connected to the corresponding terminal through the metal wiring 108. In more detail, the first semiconductor layer 101 can be electrically connected to the first terminal, for example, through the first part of the metal wiring 108. In addition, the second semiconductor layer 102 can be electrically connected to the second terminal, for example, through the second part of the metal wiring 108.

[0046] For example, the grid 109 may be configured to introduce redundancy in the event that any component of the grid 109 fails. Figure 1A A plurality of optoelectronic semiconductor devices 101 are shown, which can be connected in series and / or in parallel, for example. In this way, for example, segmented LED lighting can be achieved, according to an embodiment. For example, a certain number of optoelectronic semiconductor devices 101 connected in series and / or in parallel can be controlled together and form a segment. A plurality of such individually controlled segments can form a lighting unit.

[0047] For example, the electrical device 100 may be implemented as a lighting foil. For example, the thickness d of the dielectric layer (stack) 102 may be greater than 100 μm. For example, the thickness of the dielectric layer (stack) 102 may be less than 10 mm or less than 5 mm. For example, the thickness d of the dielectric layer (stack) 102 may be in the mm range. When the dielectric layer 102 is implemented as a dielectric layer stack comprising a plurality of dielectric sublayers, the thickness of the dielectric sublayer may also be less than 10 μm, for example less than 1 μm.

[0048] The thickness t of the metal wiring 109 may be 30 nm to 100 μm, for example, 0.2 μm to 10 μm, or for example, 1 to 3 μm.

[0049] Figure 1B The dimensions of the grid 109 are also shown. The period p, i.e. the distance between adjacent lines, may be smaller than the wavelength emitted by the radar antenna. For example, the period p may be smaller than 1 mm, for example smaller than 500 μm. According to other examples, the period p may be smaller than 250 μm, for example smaller than 200 μm, or even smaller than 150 μm. The width w of a single line may be smaller than 100 μm, for example smaller than 30 μm or smaller than 25 μm. The width w of a single line may be larger than 1 μm or larger than 8 μm.

[0050] Figure 2A A cross-sectional view of dielectric layer 102 is shown including a standing wave 124 of electromagnetic radiation that may form in dielectric layer 102 . Figure 2A The view relative to Figure 1A As shown, when electromagnetic radiation 15 is incident on dielectric layer 102, at least one standing wave 124 having at least one electric field strength minimum may be generated within dielectric layer 102 when the radiation is reflected at an interface between dielectric layer 102 and a surrounding medium (e.g., air). Figure 2A Also shown is the output electromagnetic radiation 16. The thickness d of the dielectric layer 102 may be determined, for example, as d=λ*m / (n*2).

[0051] Therefore, a cavity mode formed in the dielectric layer 102 resonates with the incident electromagnetic radiation 15 . Figure 2A The lower portion of FIG. 1 shows the relationship between electric field strength 120 and the position within dielectric layer 102. As shown, electric field strength 120 oscillates to have an electric field strength minimum 121 at the minimum position of standing wave 124. Electric field strength 120 also has an electric field strength maximum 122 at the maximum amplitude position of standing wave 124.

[0052] Figure 2AAlso shown are examples of the locations of metal wiring 108. When metal wiring 108 is arranged at electric field strength maximum location 118, the metal wiring is at a location where the electric field strength is the highest. Therefore, since the coupling strength with the cavity mode field is the greatest, the greatest amount of absorption or reflection occurs. When metal layer 108 is arranged at electric field minimum location 119, its location corresponds to the location of the lowest electric field. Therefore, since the field strength of the cavity mode is the smallest, the least amount of absorption or reflection occurs.

[0053] Figure 2A Also shown is the cavity field modulation 123, which represents the difference between the maximum and minimum values ​​of the electric field strength. The cavity field modulation depends on the Q factor of the cavity. The cavity field modulation can be increased by increasing the reflectivity of the surface of the dielectric layer 102. Figure 2A As shown, since the thickness of the dielectric (multi) layer (stack) 102 is selected to generate the standing electromagnetic wave 124, the metal wiring 108 can be placed at a position where the coupling of the standing electromagnetic wave with the metal wiring 108 can be minimized. Therefore, optimized transmission of electromagnetic radiation can be achieved.

[0054] Figure 2B A plot of the simulated transmission spectrum of an electromagnetic wave versus wavelength is shown. The simulated spectrum is based on using a single dielectric layer with a thickness of 975 μm and a refractive index of 2. The simulation was performed under the assumption of plane wave incidence and that the device is in the far field of the radar antenna, meaning that the distance between the wiring and the antenna is greater than a multiple of the wavelength of the emitted radiation.

[0055] However, this effect can also occur if the distance between the wiring and the antenna in the device is smaller than, for example, the wavelength of the emitted radiation.

[0056] The upper left inset shows that the dielectric layer 102 includes the incident electromagnetic radiation 15 and the output electromagnetic radiation 16. As shown, the maximum value of the transmission rate T may be, for example, at a wavelength λ=4 mm and a wavelength λ=2 mm. Figure 2B The schematic diagram also shows two wavelengths λ1 and λ2, which correspond to the wavelengths usually used for radar measurements. Figure 2B The illustration on the upper right shows the electric field intensity when the wavelength is 2 mm (left side) and the wavelength is 4 mm (right side). As shown by λ=2 mm on the left side, the electric field intensity at the center of the dielectric layer 102 is the largest. The electric field intensity is reduced to the minimum between the center and the edge portion (first main surface or second main surface) of the dielectric layer. In addition, as shown in the right figure on the right side, for a wavelength of 4 mm, the electric field intensity at the center of the dielectric layer 102 is the smallest, and the intensity increases toward the edge portion.

[0057] Figure 2CThe figure shows the simulated transmission of electromagnetic waves when the metal wiring 108 is arranged at different positions of the dielectric layer 102. For example, the period of the metal grid in the simulation is 200 μm. The left part shows the dielectric layer 102 including the metal wiring 108, which can be implemented as a grid 109. Figure 2C The left portion of is also shown incident electromagnetic radiation 15 and outgoing electromagnetic radiation 16. As indicated by the arrows on the left, the vertical position of the metal wiring 108 can vary.

[0058] As shown in the inset on the right side of the figure, the position of the metal wiring 108 at the center of the dielectric layer 102 is represented by curve 3 (solid line). The position of the metal wiring 108 on the second main surface 126 of the dielectric layer 102 is represented by curve 1 (dashed line), and the position of the metal wiring 108 between the center and the second main surface 126 is represented by curve 2 (dashed line). Curve 0 represents a dielectric layer without a grid, and curve ∞ represents a dielectric layer with infinite thickness and also including a metal layer. Figure 2C The figure also shows the positions of two commonly used radar wavelengths, for example, λ1 is 3.9 mm and λ2 is 12.4 mm.

[0059] As can be seen from the schematic diagram, at a wavelength λ1 of 3.9 mm (corresponding to a typical radar wavelength), when the metal wiring 108 is placed at the center, its transmission rate is much higher than when the metal wiring 108 is placed at the second main surface 126 of the dielectric layer 102 (curve 1) or placed at the center of the dielectric layer 102 and the position between the second main surface 126 (curve 2), or compared with the curve "∞" where no cavity mode is established in the dielectric layer. At a wavelength of λ1, curve 3 shows that when multiple transmissions through the dielectric layer are assumed, the signal is enhanced by more than about 4 times.

[0060] Label 2b considers the graph with a wavelength of about 2 mm, and a significant increase in transmission rate is achieved when the metal wiring is located at a position (2) between the center position (3) and the position (2) of the second main surface 126 of the dielectric layer 102. In this case, the electric field strength in the dielectric layer 102 changes, such as Figure 2B The vertical position (2) is therefore located at the minimum of the electric field strength in the dielectric layer at a wavelength of 2 mm.

[0061] For different intended wavelengths, similar enhancements can be achieved by the described principles.

[0062] Figure 3A and 3B 1 shows another embodiment of the dielectric layer 102 according to an embodiment. Figure 3AAs shown, the dielectric layer 102 may include a first dielectric layer 103 and a second dielectric layer 104. The first dielectric layer 103 may be disposed on one side of the metal wiring 108, and the second dielectric layer 104 may be disposed on a second side of the metal wiring 108.

[0063] according to Figure 3B In the illustrated embodiment, the first dielectric layer 103 and / or the second dielectric layer 104 may each include a multilayer stack. In other words, the first dielectric layer 103 may include a first multilayer stack 116. Additionally or alternatively, the second dielectric layer 104 may include a second multilayer stack 117. In this way, the cavity effect may be enhanced.

[0064] Figure 4A An example of a transmitting device 11 or an electronic system 10 is shown. As shown, a dielectric layer 102 including a metal wiring 108 can be placed directly above a radar antenna 105. In this case, the distance between the metal wiring 108 and the radar antenna 105 can be in the sub-wavelength range. Therefore, the metal wiring 108 is arranged in the near field of the antenna. Also in this case, the optimal position of the metal wiring 108 can be determined according to the above method.

[0065] According to other embodiments, a thin metal layer 107 may be arranged in the dielectric layer (stack) 102 instead of the metal wiring 108. As shown in FIG4 , the transmitting device 11 includes a radar antenna 105 and a dielectric layer 102, the radar antenna 105 being configured to transmit electromagnetic radiation having a wavelength of λ, and the dielectric layer 102 being arranged in the transmitting direction of the radar antenna. The transmitting device also includes a metal layer 107 having a thickness of less than 150 nm. The thickness d of the dielectric layer 102 measured in the vertical direction is determined so that at least one standing wave having at least one minimum value of the electric field intensity is generated in the dielectric layer 102. For example, d=λ*m / (n*2). In this formula, m represents an integer and n represents the refractive index of the dielectric layer 102. The metal layer 107 is arranged in a horizontal layer of the dielectric layer 102. The vertical position v of the metal layer is determined so that it corresponds to the minimum value of the electric field intensity of the electromagnetic radiation having a wavelength of λ.

[0066] As has been found, when the thickness of the metal layer is less than the skin depth of the metal layer (e.g. a few hundred nm), the attenuation of radar emissions will be suppressed if the metal layer is placed at a vertical position corresponding to the minimum value of the electric field strength of electromagnetic radiation with a wavelength λ.

[0067] As described above, due to the special arrangement of the metal wiring or the metal layer, a conductive layer or metal wiring can be arranged above the radar antenna.

[0068] Radar transmission is enhanced by metal wiring or a metal layer on or in the lighting cover, thereby enabling the metal layer or wiring to be applied to the radar cover.

[0069] Thus, a radar module with compact dimensions and also including an illuminated cover can be realized. For example, the radar module can be integrated into a car headlight or taillight. In addition, the emission and detection paths of the radar emission can be functionalized with lighting functions (such as illuminated signs).

[0070] For example, the electronic system 10 may result in a combination of a radar module and a segmented LED lighting unit arranged on or in the foil.

[0071] Figure 4B An example of an electronic system 10 as described above is shown. A radar antenna 105 is configured to emit electromagnetic radiation. The electromagnetic radiation is reflected by a target 23, forming reflected electromagnetic radiation 21. Furthermore, the electrical device may be implemented as an LED, which also emits light 22 towards the target.

[0072] For example, the electronic system may be a car taillight.

[0073] According to further examples, the optoelectronic semiconductor component can be implemented as a sensor.

[0074] As should be clearly understood, the described concepts may also be applied to any transmitting device including radar antennas, dielectric layers, and metal layers. In addition, the electronic system 10 may include any electrical device.

[0075] Although embodiments of the present invention have been described above, it is apparent that other embodiments may be implemented. For example, other embodiments may include any subcombination of the features described in the claims, or any subcombination of the elements described in the examples above. Therefore, the spirit and scope of the appended claims should not be limited to the description of the embodiments contained herein.

[0076] Reference numerals list

[0077] 10 Electronic Systems

[0078] 11 Launcher

[0079] 15 Incident electromagnetic radiation

[0080] 16 Output electromagnetic radiation

[0081] 20 Emitted electromagnetic radiation

[0082] 21 Reflected electromagnetic radiation

[0083] 22 Emitted light

[0084] 23 Target

[0085] 100 Electrical equipment

[0086] 101 Optoelectronic Semiconductor Devices

[0087] 102 Dielectric layer

[0088] 103 first dielectric layer

[0089] 104 second dielectric layer

[0090] 105 Radar Antenna

[0091] 106 lines

[0092] 107 Metal Layer

[0093] 108 Metal Wiring

[0094] 109 Grid

[0095] 110 first semiconductor layer

[0096] 112 Second semiconductor layer

[0097] 114 Active Area

[0098] 116 First Multilayer Stack

[0099] 117 Second multi-layer stack

[0100] 118 Maximum electric field position

[0101] 119 Electric field minimum position

[0102] 120 Electric field strength

[0103] 121 Minimum electric field strength

[0104] 122 Maximum electric field strength

[0105] 123 Cavity Field Modulation

[0106] 124 Standing Wave

[0107] 125 first main surface

[0108] 126 second main surface

Claims

1. An electronic system (10), comprising: a radar antenna (105) configured to emit electromagnetic radiation having a wavelength λ, and An electric device (100) is arranged in the transmission direction of the radar antenna (105), the electric device (100) comprising a dielectric layer (102) and a metal wiring (108) for contacting elements of the electric device (100), wherein The thickness of the dielectric layer (102) measured in the vertical direction is determined so that the emitted electromagnetic radiation forms at least one standing wave having at least one electric field strength minimum in the dielectric layer (102), The metal wiring (108) is arranged in a horizontal layer of the dielectric layer (102), and The vertical position of the metal wiring (108) is determined so that it corresponds to a minimum value of the electric field intensity of electromagnetic radiation having a wavelength of λ.

2. The electronic system (10) according to claim 1, wherein: The thickness d of the dielectric layer (102) is determined such that d=λ*m / (n*2), Herein, m represents an integer greater than 0, and n represents the refractive index of the dielectric layer (102).

3. The electronic system (10) according to claim 1 or 2, wherein: The metal wiring (108) includes a metal grid (109).

4. The electronic system (10) according to claim 3, wherein: The thickness of the metal grid (109) is 0.2 μm to 10 μm.

5. The electronic system (10) according to claim 3 or 4, wherein: The width of each metal line forming the metal grid (109) is 8 to 25 μm.

6. The electronic system (10) according to any one of claims 2 to 4, wherein: The period of the metal grid (109) is smaller than λ / n.

7. The electronic system (10) according to any one of the preceding claims, wherein: The period of the metal grid (109) is greater than 0.1*λ / n.

8. The electronic system (10) according to any one of the preceding claims, wherein: The electrical device (100) comprises an optoelectronic semiconductor device (101), wherein the optoelectronic semiconductor device (101) comprises: A first semiconductor layer (110) of a first conductivity type; a second semiconductor layer (112) of a second conductivity type, and An active region (114) for generating or absorbing electromagnetic radiation, the active region (114) being arranged between the first semiconductor layer (110) and the second semiconductor layer (112).

9. The electronic system (10) according to claim 8, wherein: The metal grid is electrically connected to the first or second semiconductor layer (110, 112).

10. The electronic system (10) according to any one of the preceding claims, wherein: The dielectric layer (102) includes a first dielectric layer (103) and a second dielectric layer (104), and the metal layer (108) is arranged between the first dielectric layer (103) and the second dielectric layer (104).

11. The electronic system (10) according to claim 10, wherein: At least one of the first dielectric layer (103) and the second dielectric layer (104) comprises a multi-layer stack.

12. The electronic system (10) according to any one of claims 2 to 11, wherein: The vertical position v of the metal wiring (108) is determined as v = λ * (k + 0.5) / (2 * n), where k <m。 13. A transmitting device (11), comprising: a radar antenna (105) configured to emit electromagnetic radiation having a wavelength λ, a dielectric layer (102) arranged in the transmission direction of the radar antenna, and The metal layer (107) has a thickness less than 500 nm, wherein The thickness d of the dielectric layer (102) measured in the vertical direction is determined so that the emitted electromagnetic radiation forms at least one standing wave having at least one electric field strength minimum in the dielectric layer (102), The metal layer (107) is arranged in a horizontal layer of the dielectric layer (102), and The vertical position of the metal layer (107) is determined so that it corresponds to a minimum value of the electric field intensity of electromagnetic radiation having a wavelength λ.

14. The transmitting device (11) according to claim 13, wherein: The thickness d of the dielectric layer (102) is determined such that d=λ*m / (n*2), Wherein, m represents an integer greater than 0, and n represents the refractive index of the dielectric layer (102).

15. The transmitting device (11) according to claim 14, wherein: The vertical position v of the metal layer (107) is determined as v = λ * (k + 0.5) / (2 * n), where k <m。

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