Photoelectric device, preparation method thereof and display device

Abstract

The invention discloses a photoelectric device, a preparation method thereof and a display device, and relates to the technical field of display. The photoelectric device comprises a first electrode, a first carrier functional layer and a second electrode which are arranged in a stacked mode, materials of the first carrier functional layer comprise a first carrier functional material and a first passivating agent, the first passivating agent is [(CH3) a1NHb1] x1Xy1, 1 < = x1 / y1 < = 3, 1 < = a1 < = 4, 0 < = b1 < = 3, and X comprises Lewis base. According to the photoelectric device provided by the invention, the hole concentration can be increased, the light conversion rate of the photoelectric device is improved, and the balance of holes and electrons is promoted, so that the batch stability and consistency of the photoelectric device are improved, and the photoelectric device is suitable for large-scale production.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to an optoelectronic device, a method for preparing the optoelectronic device, and a display device including the optoelectronic device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). OLEDs have become the mainstream technology in the field of display technology due to their excellent display performance, such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display. QLEDs have the advantages of saturated color and adjustable wavelength of emitted light, and high quantum yield of photoluminescence and electroluminescence, and have become a strong competitor to OLEDs in recent years.

[0003] On the road to commercialization, the efficiency consistency of optoelectronic devices has always been a big problem. Optoelectronic devices are prepared under the same process conditions, but even within the same batch of optoelectronic devices, their efficiency can fluctuate greatly and their consistency is still poor.

[0004] At present, the batch stability of optoelectronic devices is poor and needs further improvement. Summary of the invention

[0005] In view of this, the present application provides a photoelectric device, aiming to improve the stability of the photoelectric device.

[0006] The embodiment of the present application is implemented as follows: a photoelectric device includes

[0007] The invention comprises a first electrode, a first carrier functional layer and a second electrode which are stacked, wherein the material of the first carrier functional layer comprises a first carrier functional material and a first passivator, wherein the first passivator is [(CH3) a1 NH b1 ] x1 X y1 , wherein 1≤x1 / y1≤3, 1≤a1≤4, 0≤b1≤3, and X comprises a Lewis base.

[0008] Optionally, in some embodiments of the present application, X includes Cl - Br - ,I - 、SO4 2- PO4 3- One or more of; and / or

[0009] The values ​​of a1 and b1 satisfy: a1+b1=4; and / or

[0010] The first passivating agent includes one or more of methylammonium sulfate, methylammonium chloride, methylammonium bromide, dimethylammonium iodide, and tetramethylammonium phosphate; and / or

[0011] The first carrier functional layer is a first electron functional layer or a first hole functional layer; and / or

[0012] The first carrier functional material includes a first electron functional material or a first hole functional material; and / or

[0013] The optoelectronic device further includes a photoactive layer disposed between the first carrier functional layer and the second electrode.

[0014] Optionally, in some embodiments of the present application, the chemical formula of the first passivator includes: one or more of (CH3NH3)2SO4, CH3NH3Cl, CH3NHBr, (CH3)2NH2I, (CH3)4NPO4; and / or

[0015] The material of the photoactive layer includes 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine iridium(III)], 4,4',4"-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine iridium], diarylanthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF materials, polymers containing covalent bonding of BN, HLCT materials, Exciplex luminescent materials, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, H gSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZn Te, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnST e. PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaN P, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, CuInS2, CuInSe2, AgInS2, CdSe / CdSeS / CdS, InP / ZnSe S / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, InP / ZnSe / ZnS, AMY3, where A is selected from Cs +、CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, Y is selected from Cl - Br - ,I - One or more of; and / or

[0016] The first electronic functional material comprises one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material and an IB-IIIA-VIA semiconductor material, the material of the first undoped metal oxide particle comprises one or more of ZnO, TiO2, SnO2, ZrO2 and Ta2O5, the metal oxide in the first doped metal oxide particle comprises one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5 and Al2O3, the doping element in the first doped metal oxide particle comprises one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In and Ga, the IIB-VIA semiconductor material comprises one or more of ZnS, ZnSe and CdS, the IIIA-VA semiconductor material comprises one or more of InP and GaP, the IB-IIIA-VIA semiconductor material comprises one or more of CuInS and CuGaS; and / or

[0017] The first hole functional material includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green light-emitting material, 2,3, 6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] [vinyl], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinyl carbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenyl benzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second non One or more of doped metal oxide particles, metal sulfides, metal selenides and metal nitrides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, the metal nitride includes P-type gallium nitride; and / or

[0018] The first electrode and the second electrode each independently include one or more of a metal, a carbon material and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides, the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2.

[0019] Optionally, in some embodiments of the present application, the first carrier functional material is a first hole functional material, and the mass ratio of the first hole functional material to the first passivator is 100:(10-15); and / or

[0020] The first carrier functional material is a first electronic functional material, and the mass ratio of the first electronic functional material to the first passivator is 100:(5-12).

[0021] Optionally, in some embodiments of the present application, the optoelectronic device further comprises a second carrier functional layer, the second carrier functional layer is arranged between the photoactive layer and the second electrode, the material of the second carrier functional layer comprises a second carrier functional material, or the material of the second carrier functional layer comprises a second carrier functional material and a second passivator, and the second passivator is [(CH3) a2 NH b2 ] x2 X y2 , wherein 1≤x2 / y2≤3, 1≤a2≤4, 0≤b2≤3, a2+b2=4, the X comprises a Lewis base, and the first passivator and the second passivator are the same or different.

[0022] Optionally, in some embodiments of the present application, when the first carrier functional layer is a first hole functional layer, the second carrier functional layer is a second electron functional layer, and the second carrier functional material includes a second electron functional material; or

[0023] When the first carrier functional layer is a first electron functional layer, the second carrier functional layer is a second hole functional layer, and the second carrier functional material includes a second hole functional material.

[0024] Optionally, in some embodiments of the present application, the second electronic functional material includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials, and IB-IIIA-VIA semiconductor materials, the material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5, and the metal oxide in the first doped metal oxide particles includes ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA semiconductor materials include one or more of CuInS and CuGaS. And / or

[0025] The second hole functional material includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green light-emitting material, 2,3 ,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene [vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinyl carbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenyl benzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, the first One or more of the following: second non-doped metal oxide particles, metal sulfides, metal selenides and metal nitrides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second non-doped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

[0026] Accordingly, an embodiment of the present application further provides a method for preparing a photoelectric device, comprising:

[0027] Providing a photoelectric device preform, wherein the photoelectric device preform comprises a first electrode;

[0028] Providing a first carrier functional material and a first passivator, and disposing the first carrier functional material and the first passivator on the photoelectric device preform to form a first carrier functional layer; wherein the first passivator comprises [(CH3) a NH b ] x1 X y1 , wherein 1≤x1 / y1≤3, 1≤a≤4, 0≤b≤3, a+b=4, and X comprises a Lewis base;

[0029] A second electrode is formed on the first carrier functional layer to obtain a photoelectric device.

[0030] Optionally, in some embodiments of the present application, X includes Cl - Br - ,I - 、SO4 2- PO4 3- One or more of; and / or

[0031] The first passivating agent includes one or more of methylammonium sulfate, methylammonium chloride, methylammonium bromide, dimethylammonium iodide, and tetramethylammonium phosphate; and / or

[0032] The first carrier functional layer is a first electron functional layer or a first hole functional layer; and / or

[0033] The first carrier functional material includes a first electron functional material or a first hole functional material.

[0034] Optionally, in some embodiments of the present application, the optoelectronic device preform comprises a first electrode and a photoactive layer stacked in sequence, and the first carrier functional layer is formed on the photoactive layer; or

[0035] After forming the first carrier functional layer, the method further includes forming a photoactive layer and a second electrode to obtain a photoelectric device.

[0036] Optionally, in some embodiments of the present application, after forming the photoactive layer, the step further includes forming a second carrier functional layer, and the forming of the second carrier functional layer includes:

[0037] Providing a second carrier functional material, and disposing the second carrier functional material on the photoactive layer to form a second carrier functional layer; or

[0038] Providing a second carrier functional material and a second passivator, and disposing the second carrier functional material and the second passivator on the photoactive layer to form a second carrier functional layer; wherein the second passivator comprises [(CH3) a NH b ] x2 X y2 , wherein 1≤x2 / y2≤3, 1≤a≤4, 0≤b≤3, a+b=4, the X comprises a Lewis base; the first passivator and the second passivator are the same or different.

[0039] Optionally, in some embodiments of the present application, the method for forming a first carrier functional layer includes: mixing the first carrier functional material and a first solvent to obtain a first dispersion, mixing the first passivator and a second solvent to obtain a second dispersion, mixing the first dispersion and the second dispersion to obtain a third dispersion, and disposing the third dispersion on the optoelectronic device preform to form a first carrier functional layer.

[0040] Optionally, in some embodiments of the present application, the first solvent and the second solvent each independently include one or more of chlorobenzene, ethanol, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, ethanol, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol; and / or

[0041] In the second dispersion, the mass concentration of the first passivator is 2 mg / mL to 5 mg / mL.

[0042] Optionally, in some embodiments of the present application, the first carrier functional material includes a first hole functional material, and in the first dispersion, the mass concentration of the first hole functional material is 8 mg / mL to 12 mg / mL; in the third dispersion, the mass ratio of the first hole functional material to the first passivator is 100:(10-15); or

[0043] The first carrier functional material includes a first electronic functional material. In the first dispersion, the mass concentration of the first electronic functional material is 30 mg / mL to 40 mg / mL. In the third dispersion, the mass ratio of the first electronic functional material to the first passivator is 100:(5 to 12).

[0044] Correspondingly, an embodiment of the present application further provides a display device, which includes the above-mentioned optoelectronic device, or the optoelectronic device manufactured by the above-mentioned manufacturing method.

[0045] The optoelectronic device provided in the present application can increase the hole concentration, improve the light conversion rate of the optoelectronic device, promote the balance between holes and electrons, thereby improving the batch stability and consistency of the optoelectronic device, and is suitable for large-scale production. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0047] Figure 1 is a schematic diagram of the structure of the optoelectronic device provided in an embodiment of the present application;

[0048] Figure 2 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0049] Figure 3 It is a flow chart of the method for preparing a photoelectric device provided in an embodiment of the present application.

[0050] Reference numerals:

[0051] The first electrode 10 ; the first carrier functional layer 20 ; the light emitting layer 30 ; the second electrode 40 ; and the second carrier functional layer 50 . DETAILED DESCRIPTION

[0052] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0053] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0054] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0055] In the present application, "at least one" means one or more, and "plurality" means two or more. "One or several", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0056] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0057] There are two main reasons for the poor efficiency consistency. On the one hand, due to the carrier imbalance, the concentration of electrons in optoelectronic devices is much greater than that of holes. After the electrons are injected into the light-emitting layer, part of them are used for recombination, and the excess electrons will enter the hole functional layer to cause damage to the hole material. Different degrees of damage cause fluctuations in the efficiency consistency of optoelectronic devices. On the other hand, quantum dots are high-energy nanoparticles with a large specific surface area. A large number of defects will be generated on the surface of the light-emitting film after film formation, causing quenching of excitons. The difference in defect concentration will also cause fluctuations in the efficiency consistency of optoelectronic devices. It should be noted that these two mechanisms exist almost simultaneously, and optimizing one of the problems alone will not produce satisfactory results. For example, by introducing a new passivation layer on the light-emitting layer, the light-emitting layer will be passivated to a certain extent, but the problem of carrier imbalance will still lead to poor consistency of optoelectronic devices, or by adding an electron blocking layer to adjust the carrier balance, but the problem of quantum dot defects cannot be solved.

[0058] The technical solution of this application is as follows:

[0059] First, see Figure 1 The present invention provides an optoelectronic device, comprising a first electrode 10, a first carrier functional layer 20 and a second electrode 40, wherein the material of the first carrier functional layer 20 comprises a first carrier functional material and a first passivator, wherein the first passivator is [(CH3) a1 NH b1 ] x1 X y1 , wherein 1≤x1 / y1≤3, 1≤a1≤4, 0≤b1≤3, and X comprises a Lewis base.

[0060] In the optoelectronic device provided by the present application, when the first carrier functional layer 20 is a hole functional layer, the methylamine group in the first passivator has the property of repelling electrons and accepting holes, thereby increasing the concentration of holes; when the first carrier functional layer 20 is an electron functional layer, the X Lewis base in the first passivator can passivate the defects of the electronic functional material and improve the light conversion rate; and the methylamine group in the first passivator can also reduce the concentration of electrons, ensure the concentration balance of holes and electrons, and promote the effective recombination of electrons and holes; in addition, doping the first passivator into the first carrier functional layer 20 can avoid the drastic change of the energy level of the first carrier functional layer 20, improve the batch stability and consistency of the optoelectronic device, and be suitable for commercial large-scale production.

[0061] In some embodiments, X comprises Cl - Br - ,I - 、SO4 2- PO4 3- One or more of the .

[0062] In some embodiments, the values ​​of a1 and b1 satisfy: a1+b1=4.

[0063] In some embodiments, the first passivating agent includes one or more of methylammonium sulfate, methylammonium chloride, methylammonium bromide, dimethylammonium iodide, and tetramethylammonium phosphate.

[0064] In some embodiments, the chemical formula of the first passivator includes one or more of: (CH3NH3)2SO4, CH3NH3Cl, CH3NHBr, (CH3)2NH2I, (CH3)4NPO4.

[0065] In some embodiments, the first carrier functional layer 20 is a first hole functional layer or a first electron functional layer.

[0066] Furthermore, the first hole functional layer includes one or more of a first hole injection layer and a first hole transport layer.

[0067] The first electronic functional layer includes one or more of a first electron injection layer and a first electron transport layer.

[0068] In the prior art, an electron blocking layer is usually provided between the hole functional layer and the light emitting layer 30 to promote hole transport and prevent electrons from damaging the material of the hole functional layer. However, as a new film layer, the electron blocking layer will cause a drastic change in the energy level from the hole functional layer to the light emitting layer 30, thereby causing the excitons in the light emitting layer 30 to be released in the form of non-radiative transitions such as heat, phonon transitions, etc., reducing the luminous efficiency of the optoelectronic device.

[0069] In some embodiments, the first carrier functional material includes a first electron functional material or a first hole functional material. It is understood that when the first carrier functional layer 20 is a first hole functional layer, the first carrier functional material includes a first hole functional material, and correspondingly, when the first carrier functional layer 20 is a first electron functional layer, the first carrier functional material includes a first electron functional material.

[0070] It can be understood that in the present application, when the first carrier functional layer 20 is the first hole functional layer, the ammonium ions in the first passivator have the function of attracting holes and repelling electrons, thereby increasing the concentration of holes and reducing the damage of electrons to the material of the first hole functional layer. The first passivator can also stabilize the energy level of the first hole functional layer, reduce the change of energy level, and avoid the influence of energy level mutation on hole migration. In addition, when the material of the first hole functional layer is an inorganic material, the first passivator can also effectively passivate the defects of the material of the first hole functional layer and promote the light conversion rate of excitons generated by electron recombination.

[0071] When the first carrier functional layer 20 is the first electronic functional layer, the material of the first electronic functional layer is an inorganic material, and the X in the first passivator can effectively passivate the defects of the material of the first electronic functional layer, improve the light conversion rate of the optoelectronic device, and compared with the prior art in which a passivation layer is provided between the electronic functional layer and the light-emitting layer 30, the first passivator in this scheme is located inside the first electronic functional layer, avoiding the introduction of a new film layer, and reducing the hindering effect on electron transmission. It should be noted that the ammonium ions in the first passivator have the effect of attracting holes and repelling electrons. When the first passivator is doped into the first electronic functional layer, it has a certain effect of reducing the concentration of electrons, but the electron concentration of the first electronic functional layer is much greater than the hole concentration of the first hole functional layer. The repelling effect of the first passivator on electrons can reduce the electron concentration of the first electronic functional layer, thereby ensuring the balance between the electron concentration and the hole concentration, and promoting the effective recombination of electrons and holes.

[0072] In some embodiments, the thickness of the first hole functional layer is 20 nm to 30 nm, for example, 21 nm, 22 nm, 23 nm, 24 nm, 25 nm, 26 nm, 27 nm, 28 nm, 29 nm, etc.

[0073] In some embodiments, the thickness of the first electronic functional layer is 28 nm to 35 nm, for example, 29 nm, 30 nm, 31 nm, 32 nm, 33 nm, 34 nm, etc.

[0074] In some embodiments, the first electronic functional material includes one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material, and an IB-IIIA-VIA semiconductor material. The material of the first undoped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the first doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS. The IIIA-VA semiconductor material includes one or more of InP and GaP. The IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS.

[0075] In some embodiments, the first hole functional material includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green light-emitting Materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylenevinylene), poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1, 4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinyl carbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenyl benzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles , one or more of a second undoped metal oxide particle, a metal sulfide, a metal selenide and a metal nitride, the metal oxide in the second doped metal oxide particle and the metal oxide in the second undoped metal oxide particle each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particle includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

[0076] In some embodiments, when the first carrier functional material is a first hole functional material, the mass ratio of the first hole functional material to the first passivator is 100:(10-15), for example, it can be 100:11, 100:12, 100:13, 100:14, etc.

[0077] In some embodiments, when the first carrier functional material is a first electronic functional material, the mass ratio of the first electronic functional material to the first passivator is 100:(5-12), for example, it can be 100:6, 100:7, 100:8, 100:9, 100:10, 100:11, etc.

[0078] In some embodiments, the optoelectronic device further includes a photoactive layer 30 , wherein the photoactive layer 30 is disposed between the first carrier functional layer 20 and the second electrode 40 .

[0079] In some embodiments, the material of the photoactive layer 30 includes one or more of an organic light-emitting material and a quantum dot light-emitting material.

[0080] The organic light-emitting material includes one or more of CBP:Ir(mppy)3(4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine iridium(III)]), TCTX:Ir(mmpy)(4,4',4"-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine iridium]), diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delay) materials, polymers containing BN covalent bonds, HLCT (hybridized localized charge transfer excited state) materials, and Exciplex (exciplex) light-emitting materials.

[0081] The quantum dot luminescent material includes one or more of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials.

[0082] The material of the single structure quantum dots, the core material of the core-shell structure quantum dots and the shell material of the core-shell structure quantum dots can be respectively selected from but not limited to one or more of the group II-VI compounds, group IV-VI compounds, group III-V compounds and group I-III-VI compounds. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compound includes one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb. The I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2.

[0083] As an example, the core-shell structured quantum dots include one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0084] The perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor, or an organic-inorganic hybrid perovskite semiconductor. The inorganic perovskite semiconductor has a general structural formula of AMY3, wherein A is selected from Cs + 、CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, Y is selected from Cl - Br - ,I - One or more of the .

[0085] In some embodiments, the average particle size of the quantum dot luminescent material is 4 nm to 10 nm, for example, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, etc.

[0086] It is understood that the surface of the quantum dots contains metal cations, such as Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ The metal cation has Lewis acid properties, and the metal cation can be connected to X of the first passivator through electron pairing to achieve the passivation effect of the first passivator on the surface defects of the quantum dots; in addition, the surface of the quantum dots also contains positively charged vacancies, and X can be adsorbed on the positively charged vacancies through Coulomb force to achieve passivation of the quantum dot defects, thereby further improving the batch stability of the optoelectronic device and the luminous efficiency of the optoelectronic device.

[0087] In some embodiments, see Figure 2The optoelectronic device further includes a second carrier functional layer 50, and the second carrier functional layer 50 is disposed between the photoactive layer 30 and the second electrode 40. The second carrier functional layer 50 is a second electron functional layer or a second hole functional layer.

[0088] It can be understood that when the first carrier functional layer 20 is a first hole functional layer, the second carrier functional layer 50 is a second electron functional layer, and the second carrier functional material includes a second electron functional material. When the second carrier functional layer 50 is a first electron functional layer, the first carrier functional layer 20 is a second hole functional layer, and the second carrier functional material includes a second hole functional material.

[0089] Furthermore, when the second carrier functional layer 50 is a second electronic functional layer, the second electronic functional material includes one or more of a first doped metal oxide particle, a first non-doped metal oxide particle, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material, and an IB-IIIA-VIA semiconductor material, the material of the first non-doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5, and the metal oxide in the first doped metal oxide particle includes ZnO, TiO2 , SnO2, ZrO2, Ta2O5, Al2O3, the doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, the IIB-VIA semiconductor materials include one or more of ZnS, ZnSe, CdS, the IIIA-VA semiconductor materials include one or more of InP, GaP, the IB-IIIA-VIA semiconductor materials include one or more of CuInS, CuGaS. It can be understood that when the second carrier functional layer 50 is an electronic functional layer, the second carrier functional material can be an inorganic material or an organic material.

[0090] In some other embodiments, when the second carrier functional layer 50 is a second hole functional layer, the second hole functional material includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, -bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazolyl-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctyl)-1,4,5,8,9,12-hexaazatriphenylene] fluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl) diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene ], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraaryl benzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfide, metal selenide and metal nitride, the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

[0091] In some other embodiments, the material of the second carrier functional layer 50 includes a second carrier functional material and a second passivator.

[0092] In some embodiments, the second passivating agent is [(CH3) a2 NH b2 ] x2 X y2 , wherein 1≤x2 / y2≤3, 1≤a2≤4, 0≤b2≤3, a2+b2=4, and X comprises a Lewis base.

[0093] It should be noted that the first passivator and the second passivator may be the same or different.

[0094] The second passivator may refer to the first passivator, which will not be described in detail here.

[0095] In some embodiments, the first electrode 10 and the second electrode 40 each independently include one or more of a metal, a carbon material and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides, and the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2. Here, “ / ” represents a stacked structure. For example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer and an AZO layer stacked in sequence.

[0096] Second, see Figure 3 The present application also provides a method for preparing a photoelectric device, comprising:

[0097] S11, providing a photoelectric device preform, wherein the photoelectric device preform comprises a first electrode 10;

[0098] S12, providing a first carrier functional material and a first passivator, and disposing the first carrier functional material and the first passivator on the photoelectric device preform to form a first carrier functional layer 20; wherein the first passivator comprises [(CH3) a NH b ] x1 X y1 , wherein 1≤x1 / y1≤3, 1≤a≤4, 0≤b≤3, a+b=4, and X comprises a Lewis base;

[0099] S13, forming a second electrode 40 on the first carrier functional layer 20 to obtain a photoelectric device.

[0100] It can be understood that the method of forming the first carrier functional layer 20 and the second carrier functional layer 50 can adopt conventional technical means in the art.

[0101] In some embodiments, the optoelectronic device preform includes a first electrode 10 and a photoactive layer 30 which are stacked in sequence, and the first carrier functional layer 20 is formed on the photoactive layer 30 .

[0102] In some other embodiments, after forming the first carrier functional layer 20, the process further includes forming a photoactive layer 30 and a second electrode 40 to obtain a photoelectric device.

[0103] Furthermore, after forming the photoactive layer 30, the second carrier functional layer 50 is further formed. The forming of the second carrier functional layer 50 includes:

[0104] Providing a second carrier functional material, and disposing the second carrier functional material on the photoactive layer 30 to form a second carrier functional layer 50; or

[0105] Providing a second carrier functional material and a second passivator, disposing the second carrier functional material and the second passivator on the photoactive layer 30 to form a second carrier functional layer 50; wherein the second passivator comprises [(CH3) a NH b ] x2 X y2 , wherein 1≤x2 / y2≤3, 1≤a≤4, 0≤b≤3, a+b=4, the X comprises a Lewis base; the first passivator and the second passivator are the same or different.

[0106] In at least one embodiment, the method for forming the first carrier functional layer 20 is a solution method, including: mixing the first carrier functional material and the first solvent to obtain a first dispersion, mixing the first passivator and the second solvent to obtain a second dispersion, mixing the first dispersion and the second dispersion to obtain a third dispersion, and disposing the third dispersion on the optoelectronic device preform to form the first carrier functional layer 20.

[0107] In some embodiments, the first solvent and the second solvent respectively include one or more of chlorobenzene, ethanol, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, ethanol, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

[0108] In some embodiments, after mixing the first dispersion and the second dispersion, heating is further included.

[0109] Furthermore, the heating temperature is 100°C to 180°C, for example, it can be 102°C, 105°C, 110°C, 112°C, 115°C, 118°C, 120°C, 150°C, 155°C, 160°C, 165°C, 170°C, 175°C, etc.

[0110] The heating time is 10 min to 15 min, for example, 11 min, 12 min, 13 min, 14 min, etc.

[0111] In this way, at the heating temperature and time, the first passivator and the first carrier functional material are facilitated to be fully and evenly mixed.

[0112] In some embodiments, the first carrier functional material includes a first hole functional material or a first electron functional material.

[0113] In some embodiments, when the first carrier functional material is a first hole functional material, in the first dispersion, the mass concentration of the first hole functional material is 8 mg / mL to 12 mg / mL, for example, 9 mg / mL, 10 mg / mL, 11 mg / mL, etc.

[0114] In some embodiments, in the second dispersion, the mass concentration of the first passivator is 2 mg / mL to 5 mg / mL, for example, 3 mg / mL, 4 mg / mL, etc.

[0115] In some embodiments, when the first carrier functional material is a first electronic functional material, in the first dispersion, the mass concentration of the first electronic functional material is 30 mg / mL to 40 mg / mL, for example, 32 mg / mL, 35 mg / mL, 38 mg / mL, etc.

[0116] In some embodiments, when the first carrier functional material is a first hole functional material, in the third dispersion, the mass ratio of the first hole functional material to the first passivator is 100:(10-15), for example, it can be 100:11, 100:12, 100:13, 100:14, etc.

[0117] In some embodiments, when the first carrier functional material is a first electronic functional material, in the third dispersion, the mass ratio of the first electronic functional material to the first passivator is 100:(5-12), for example, it can be 100:6, 100:7, 100:8, 100:9, 100:10, 100:11, etc.

[0118] The method for forming the second carrier functional layer 50 is similar to the method for forming the first carrier functional layer 20 , and will not be described in detail herein.

[0119] In a third aspect, an embodiment of the present application further provides a display device, which includes the above-mentioned optoelectronic device.

[0120] The display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0121] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0122] Example 1

[0123] This embodiment provides a photoelectric device, and the preparation method is as follows:

[0124] Provide ITO glass, wipe the ITO surface with a cotton swab dipped in a small amount of soapy water to remove impurities visible to the naked eye, then use deionized water, acetone, ethanol, and isopropanol for ultrasonic cleaning for 15 minutes, then blow dry with nitrogen, and irradiate with UV for 15 minutes to form an ITO anode;

[0125] PEDOT:PSS was spin-coated on the ITO anode at a speed of 3000 rpm, followed by heating at 150 °C for 20 min to form a 23 nm hole injection layer;

[0126] Dissolve TFB in chlorobenzene to a concentration of 8 mg / mL, take 2 mL into a volumetric flask, add 0.5 mL of chlorobenzene solution of methyl ammonium sulfate with a concentration of 4 mg / mL, heat at 100°C for 10 min to obtain TFB & methyl ammonium sulfate, spin-coat it on the hole injection layer at a spin coating speed of 3500 rpm, and then heat at 150°C for 30 min to form a 30 nm hole transport layer;

[0127] Quantum dots with CdSe as core and ZnS as shell were spin-coated on the hole transport layer at a speed of 2800 rpm, followed by heating at 100°C for 5 min to form a luminescent layer of 11 nm;

[0128] ZnO was spin-coated on the light-emitting layer at a speed of 4000 rpm, and then heated at 80°C for 10 min to form a 31 nm electron transport layer;

[0129] On the electron transport layer, turn on the Ag target. The cathode is formed by evaporation at a rate of 100 nm in thickness;

[0130] The photoelectric device is encapsulated by acrylic resin.

[0131] Example 2

[0132] This embodiment is basically the same as the embodiment 1, except that the method for preparing the hole transport layer in this embodiment includes: spin coating TFB on the hole injection layer at a rotation speed of 3000 rpm, followed by heating at 150° C. for 30 min, with a thickness of 30 nm;

[0133] The preparation method of the electron transport layer includes: dissolving ZnO in ethanol with a concentration of 30 mg / mL, taking 2 mL into a volumetric flask, adding 2 mL of a 3 mg / mL methylammonium chloride chlorobenzene solution, heating at 150°C for 10 min to obtain ZnO & methylammonium chloride, spin coating it on the light-emitting layer at a spin coating speed of 4500 rpm, and then heating at 80°C for 10 min to form a 34 nm electron transport layer.

[0134] Example 3

[0135] This embodiment is basically the same as Embodiment 1, except that the preparation method of the electron transport layer in this embodiment includes: dissolving ZnO in ethanol to a concentration of 30 mg / mL, taking 2 mL into a volumetric flask, adding 2 mL of a 3 mg / mL chlorobenzene solution of methylammonium chloride, heating at 150° C. for 10 min to obtain ZnO & methylammonium chloride, spin coating it on the light-emitting layer at a spin coating speed of 4500 rpm, and then heating at 80° C. for 10 min to form a 34 nm electron transport layer.

[0136] Example 4

[0137] This embodiment is substantially the same as Embodiment 1, except that TFB is replaced by nickel oxide in this embodiment.

[0138] Example 5

[0139] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, methylammonium sulfate is replaced by dimethylammonium iodide.

[0140] Example 6

[0141] This embodiment is substantially the same as Embodiment 2, except that in this embodiment, ZnO is replaced by magnesium-doped barium oxide.

[0142] Example 7

[0143] This embodiment is substantially the same as Embodiment 2, except that in this embodiment, methylammonium chloride is replaced by tetramethylammonium phosphate.

[0144] Example 8

[0145] This embodiment is substantially the same as Embodiment 3, except that, in this embodiment, methylammonium sulfate is replaced by methylammonium bromide, and methylammonium chloride is replaced by methylammonium bromide.

[0146] Example 9

[0147] This embodiment is substantially the same as Embodiment 1, except that the volume of the chlorobenzene solution of methylammonium sulfate in this embodiment is 0.4 mL.

[0148] Example 10

[0149] This embodiment is substantially the same as Embodiment 1, except that the volume of the chlorobenzene solution of methylammonium sulfate in this embodiment is 0.6 mL.

[0150] Embodiment 11

[0151] This embodiment is substantially the same as Embodiment 2, except that the volume of the chlorobenzene solution of methylammonium sulfate in this embodiment is 1 mL.

[0152] Example 12

[0153] This embodiment is substantially the same as Embodiment 2, except that the volume of the chlorobenzene solution of methylammonium sulfate in this embodiment is 2.4 mL.

[0154] Example 13

[0155] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, the quantum dots with CdSe as the core and ZnS as the shell are replaced with quantum dots with ZnSe as the core and ZnS as the shell.

[0156] Embodiment 14

[0157] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, an inverted photoelectric device is prepared in the order of cathode, electron transport layer, light emitting layer, hole transport layer, hole injection layer and anode.

[0158] Embodiment 15

[0159] This embodiment is substantially the same as Embodiment 2, except that in this embodiment, an inverted photoelectric device is prepared in the order of cathode, electron transport layer, light emitting layer, hole transport layer, hole injection layer and anode.

[0160] Example 16

[0161] This embodiment is substantially the same as Embodiment 3, except that in this embodiment, an inverted photoelectric device is prepared in the order of cathode, electron transport layer, light emitting layer, hole transport layer, hole injection layer and anode.

[0162] Comparative Example 1

[0163] This comparative example is basically the same as Example 1, except that the preparation method of the hole transport layer in this comparative example includes: spin coating TFB on the hole injection layer at a rotation speed of 3000 rpm, followed by heating at 150° C. for 30 min, with a thickness of 30 nm.

[0164] Comparative Example 2

[0165] This comparative example is basically the same as Example 2, except that the preparation method of the hole transport layer in this comparative example includes: spin coating TFB on the hole injection layer at a rotation speed of 3000 rpm, followed by heating at 150° C. for 30 min, with a thickness of 30 nm; spin coating methylammonium chloride on the light-emitting layer to form a passivation layer; and forming an electronic functional layer on the passivation layer.

[0166] Comparative Example 3

[0167] This comparative example is basically the same as Example 1, except that the preparation method of the hole transport layer in this comparative example includes: spin coating TFB on the hole injection layer at a rotation speed of 3000 rpm, followed by heating at 150° C. for 30 min, with a thickness of 30 nm;

[0168] The preparation method of the light-emitting layer includes: spin coating quantum dots with CdSe as core and ZnS as shell and methylammonium iodide on the hole transport layer at a spin coating speed of 2800 rpm, followed by heating at 100° C. for 5 minutes to form a light-emitting layer of 11 nm.

[0169] Comparative Example 4

[0170] This comparative example is substantially the same as Example 2, except that methylammonium chloride is replaced by polydiallylpropylenedimethylammonium chloride in this comparative example.

[0171] Comparative Example 5

[0172] This comparative example is substantially the same as comparative example 1, except that in this comparative example, an inverted photoelectric device is prepared in the order of cathode, electron transport layer, light emitting layer, hole transport layer, hole injection layer and anode.

[0173] According to the methods of Examples 1 to 16 and Comparative Examples 1 to 5, 35 optoelectronic devices were prepared for each Example and each Comparative Example, and the maximum external quantum efficiency of the optoelectronic devices was tested to obtain the average maximum external quantum efficiency EQE max And the variance result S 2 See Table 1.

[0174] Among them, the detection method of the maximum external quantum efficiency is:

[0175] The ratio of the number of electron-hole pairs injected into quantum dots to the number of emitted photons, expressed in %, is an important parameter for measuring the quality of electrophotoelectric devices and can be obtained by measuring with an EQE optical test instrument. The specific calculation formula is as follows:

[0176]

[0177] Where ηe is the light output coupling efficiency, ηr is the ratio of the number of recombined carriers to the number of injected carriers, χ is the ratio of the number of excitons that generate photons to the total number of excitons, and K R is the radiation process rate, K NR is the rate of the non-radiative process.

[0178] Test conditions: carried out at room temperature, air humidity is 30% to 60%.

[0179] The variance is calculated using the following formula:

[0180]

[0181] Among them, x1 to x n is the maximum external quantum efficiency of each optoelectronic device in the same preparation method, M is the average value of the maximum external quantum efficiency, and n is the number of optoelectronic devices, which is 35.

[0182] Table 1

[0183]

[0184]

[0185] From Table 1, we can see that:

[0186] It can be seen from Examples 1 to 3 and Comparative Examples 1 to 4 that adding a passivator to the hole functional layer or the electron functional layer alone can effectively improve the luminous efficiency of the optoelectronic device and improve the consistency of the luminous efficiency; in Example 3, a passivator is added to both the hole functional layer and the electron functional layer. Compared with the optoelectronic device of Comparative Example 1, its luminous efficiency is improved by about 3 times, and the consistency of the optoelectronic device is improved by about 19 times; compared with Comparative Example 1, the luminous efficiency and consistency of Comparative Examples 2 to 4 have not been significantly improved, and their performance is significantly worse than that of the optoelectronic devices of Examples 1 to 3. This is because a passivation layer is set alone in Comparative Example 2, resulting in a drastic change in energy levels, and the energy level mismatch causes the efficiency of the optoelectronic device to decrease. In Comparative Example 3, the passivator is mixed with the luminescent material, which may cause high-energy excitons to be absorbed by the passivator, resulting in more non-radiative transitions, resulting in low efficiency and consistency of the optoelectronic device; in Comparative Example 4, a polymer is mixed with an electronic functional material, and the highly polymerized organic matter may cause the electron mobility of the composite electron transport layer to decrease, and the efficiency and consistency of the optoelectronic device cannot be effectively improved;

[0187] It can be seen from Examples 4 to 8, Example 13 and Comparative Example 1 that replacing the passivating agent or the carrier functional material or the quantum dot material has little effect on the performance of the optoelectronic device. Compared with the optoelectronic device of Comparative Example 1, its luminous efficiency is significantly improved and the variance is significantly reduced, indicating that the consistency of the luminous efficiency is improved;

[0188] It can be seen from Examples 9 to 12 and Comparative Example 1 that within the ratio range provided in the present application, the mixture of the passivator and the hole functional material, or the mixture of the passivator and the electron functional material, can improve the luminous efficiency of the optoelectronic device and improve the consistency of the luminous efficiency;

[0189] It can be seen from Examples 14 to 16 and Comparative Example 4 that, for inverted photoelectric devices, the luminous efficiency of the photoelectric devices of Examples 14 to 16 is higher than that of the photoelectric device of Comparative Example 4, and the variance thereof is lower than that of the photoelectric device of Comparative Example 4, indicating that the luminous efficiency and consistency of the photoelectric devices of Examples 14 to 16 are significantly improved.

[0190] The optoelectronic devices and their preparation methods, and display devices provided in the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the methods and core ideas of the present application. At the same time, for technical personnel in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A photoelectric device, characterized in that: The invention comprises a first electrode, a first carrier functional layer and a second electrode which are stacked, wherein the material of the first carrier functional layer comprises a first carrier functional material and a first passivator, wherein the first passivator is [(CH3) a1 NH b1 ] x1 X y1 , wherein 1≤x1 / y1≤3, 1≤a1≤4, 0≤b1≤3, and X comprises a Lewis base.

2. The optoelectronic device according to claim 1, characterized in that The X includes Cl - Br - ,I - 、SO4 2- PO4 3- One or more of; and / or The values ​​of a1 and b1 satisfy: a1+b1=4; and / or The first passivating agent includes one or more of methylammonium sulfate, methylammonium chloride, methylammonium bromide, dimethylammonium iodide, and tetramethylammonium phosphate; and / or The first carrier functional layer is a first electron functional layer or a first hole functional layer; and / or The first carrier functional material includes a first electron functional material or a first hole functional material; and / or The optoelectronic device further includes a photoactive layer disposed between the first carrier functional layer and the second electrode.

3. The optoelectronic device according to claim 2, characterized in that The chemical formula of the first passivating agent includes: one or more of (CH3NH3)2SO4, CH3NH3Cl, CH3NHBr, (CH3)2NH2I, (CH3)4NPO4; and / or The material of the photoactive layer includes 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine iridium(III)], 4,4',4"-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine iridium], diarylanthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF materials, polymers containing covalent bonding of BN, HLCT materials, Exciplex luminescent materials, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, H gSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZn Te, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnST e. PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaN P, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, CuInS2, CuInSe2, AgInS2, CdSe / CdSeS / CdS, InP / ZnSe S / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, InP / ZnSe / ZnS, AMY3, where A is selected from Cs + 、CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, Y is selected from Cl - Br - ,I - One or more of; and / or The first electronic functional material comprises one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material and an IB-IIIA-VIA semiconductor material, the material of the first undoped metal oxide particle comprises one or more of ZnO, TiO2, SnO2, ZrO2 and Ta2O5, the metal oxide in the first doped metal oxide particle comprises one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5 and Al2O3, the doping element in the first doped metal oxide particle comprises one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In and Ga, the IIB-VIA semiconductor material comprises one or more of ZnS, ZnSe and CdS, the IIIA-VA semiconductor material comprises one or more of InP and GaP, the IB-IIIA-VIA semiconductor material comprises one or more of CuInS and CuGaS; and / or The first hole functional material includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green light-emitting material, 2,3, 6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] [vinyl], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinyl carbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenyl benzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second non One or more of doped metal oxide particles, metal sulfides, metal selenides and metal nitrides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, the metal nitride includes P-type gallium nitride; and / or The first electrode and the second electrode each independently include one or more of a metal, a carbon material and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides, the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2.

4. The optoelectronic device according to claim 2 or 3, characterized in that: The first carrier functional material is a first hole functional material, and the mass ratio of the first hole functional material to the first passivator is 100:(10-15); and / or The first carrier functional material is a first electronic functional material, and the mass ratio of the first electronic functional material to the first passivator is 100:(5-12).

5. The optoelectronic device according to claim 2, characterized in that: The optoelectronic device further comprises a second carrier functional layer, the second carrier functional layer is arranged between the photoactive layer and the second electrode, the material of the second carrier functional layer comprises a second carrier functional material, or the material of the second carrier functional layer comprises a second carrier functional material and a second passivator, and the second passivator is [(CH3) a2 NH b2 ] x2 X y2 , wherein 1≤x2 / y2≤3, 1≤a2≤4, 0≤b2≤3, a2+b2=4, the X comprises a Lewis base, and the first passivator and the second passivator are the same or different.

6. The optoelectronic device according to claim 5, characterized in that When the first carrier functional layer is a first hole functional layer, the second carrier functional layer is a second electron functional layer, and the second carrier functional material includes a second electron functional material; or When the first carrier functional layer is a first electron functional layer, the second carrier functional layer is a second hole functional layer, and the second carrier functional material includes a second hole functional material.

7. The optoelectronic device according to claim 6, characterized in that The second electronic functional material comprises one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material and an IB-IIIA-VIA semiconductor material, the material of the first undoped metal oxide particle comprises one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5, the metal oxide in the first doped metal oxide particle comprises one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3, the doping element in the first doped metal oxide particle comprises one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga, the IIB-VIA semiconductor material comprises one or more of ZnS, ZnSe, and CdS, the IIIA-VA semiconductor material comprises one or more of InP and GaP, and the IB-IIIA-VIA semiconductor material comprises one or more of CuInS and CuGaS; and / or The second hole functional material includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green light-emitting material, 2,3 ,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene [vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinyl carbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenyl benzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, the first One or more of the following: second non-doped metal oxide particles, metal sulfides, metal selenides and metal nitrides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second non-doped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

8. A method for preparing a photoelectric device, characterized in that: include: Providing a photoelectric device preform, wherein the photoelectric device preform comprises a first electrode; Providing a first carrier functional material and a first passivator, and disposing the first carrier functional material and the first passivator on the photoelectric device preform to form a first carrier functional layer; wherein the first passivator comprises [(CH3) a NH b ] x1 X y1 , wherein 1≤x1 / y1≤3, 1≤a≤4, 0≤b≤3, a+b=4, and X comprises a Lewis base; A second electrode is formed on the first carrier functional layer to obtain a photoelectric device.

9. The preparation method according to claim 8, characterized in that: The X includes Cl - Br - ,I - 、SO4 2- PO4 3- One or more of; and / or The first passivating agent includes one or more of methylammonium sulfate, methylammonium chloride, methylammonium bromide, dimethylammonium iodide, and tetramethylammonium phosphate; and / or The first carrier functional layer is a first electron functional layer or a first hole functional layer; and / or The first carrier functional material includes a first electron functional material or a first hole functional material.

10. The preparation method according to claim 8, characterized in that: The photoelectric device preform comprises a first electrode and a photoactive layer which are stacked in sequence, and the first carrier functional layer is formed on the photoactive layer; or After forming the first carrier functional layer, the method further includes forming a photoactive layer and a second electrode to obtain a photoelectric device.

11. The preparation method according to claim 10, characterized in that: After forming the photoactive layer, the method further includes forming a second carrier functional layer, wherein the forming of the second carrier functional layer includes: Providing a second carrier functional material, and disposing the second carrier functional material on the photoactive layer to form a second carrier functional layer; or Providing a second carrier functional material and a second passivator, and disposing the second carrier functional material and the second passivator on the photoactive layer to form a second carrier functional layer; wherein the second passivator comprises [(CH3) a NH b ] x2 X y2 , wherein 1≤x2 / y2≤3, 1≤a≤4, 0≤b≤3, a+b=4, the X comprises a Lewis base; the first passivator and the second passivator are the same or different.

12. The preparation method according to claim 8, characterized in that: The method for forming the first carrier functional layer includes: mixing the first carrier functional material and a first solvent to obtain a first dispersion, mixing the first passivator and a second solvent to obtain a second dispersion, mixing the first dispersion and the second dispersion to obtain a third dispersion, and disposing the third dispersion on the optoelectronic device preform to form the first carrier functional layer.

13. The preparation method according to claim 12, characterized in that: The first solvent and the second solvent each independently include one or more of chlorobenzene, ethanol, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, ethanol, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol; and / or In the second dispersion, the mass concentration of the first passivator is 2 mg / mL to 5 mg / mL.

14. The preparation method according to claim 12, characterized in that: The first carrier functional material includes a first hole functional material, and in the first dispersion, the mass concentration of the first hole functional material is 8 mg / mL to 12 mg / mL; in the third dispersion, the mass ratio of the first hole functional material to the first passivator is 100:(10-15); or The first carrier functional material includes a first electronic functional material. In the first dispersion, the mass concentration of the first electronic functional material is 30 mg / mL to 40 mg / mL. In the third dispersion, the mass ratio of the first electronic functional material to the first passivator is 100:(5 to 12).

15. A display device, characterized in that: The invention comprises a photoelectric device as claimed in any one of claims 1 to 7, or a photoelectric device prepared by the preparation method as claimed in any one of claims 8 to 14.

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