A cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material and a preparation method thereof

Abstract

The application discloses a cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material and a preparation method thereof, and relates to the technical field of high-temperature piezoelectric ceramic materials. The cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material and the preparation method thereof have the following material: 0.5-10% of cerium and chromium account for the total weight, and 67-99.6% of bismuth titanate account for the total weight; the composition of the material is Bi 4‑x Ce x Ti 2.98 Cr 0.02 O 12 The application takes Bi4Ti3O 12 as a matrix, introduces Ce 4+ / Cr 3+ , successfully prepares the piezoelectric ceramic with high Curie temperature and good temperature stability, and simultaneously obtains excellent piezoelectric performance (d 33 ~19.5pC / N) through component regulation and process optimization, and further development of the high-temperature piezoelectric ceramic is promoted.

Description

Technical Field

[0001] This invention relates to the field of high-temperature piezoelectric ceramic materials technology, specifically to a cerium chromium-bismuth titanate-based high-temperature piezoelectric ceramic material and its preparation method. Background Technology

[0002] Piezoelectric ceramics, as functional materials capable of converting mechanical energy and electrical energy, have been widely used in various industrial fields. However, fields such as military, metallurgy, geological exploration, aerospace, and nuclear energy require piezoelectric materials to have high Curie temperatures because these fields need to perform vibration monitoring and health management of critical equipment under harsh environments such as high temperature, high radiation, and complex vibrations. The Curie temperature (T) is... c The Curie temperature is the critical point at which piezoelectric materials transition from ferroelectric to paraelectric materials. Above the Curie temperature, the spontaneous polarization of piezoelectric ceramics becomes zero, and the piezoelectric response disappears. Currently, lead zirconate titanate (PZT) series piezoelectric ceramics are widely used due to their high piezoelectric and electromechanical properties; however, their low Curie and depolarization temperatures prevent them from being used in high-temperature operating environments. Furthermore, high-performance piezoelectric ceramic materials with high operating temperatures are very rare. This has long forced the use of complex and costly piezoelectric single-crystal materials for special high-temperature piezoelectric devices. Therefore, developing high-Curie piezoelectric ceramic materials with excellent piezoelectric properties has become an urgent task.

[0003] Bismuth layered piezoelectric ceramics, with their high Curie temperature, strong spontaneous polarization, low dielectric constant, good temperature stability, and high mechanical quality factor, are suitable as piezoelectric materials for high-temperature and high-frequency applications, and have therefore attracted widespread attention and research. Among them, Bi₄Ti₃O₄... 12 As the earliest discovered bismuth-layered ceramic, it boasts a Curie temperature as high as 675℃. However, its relatively low piezoelectric constant and high-temperature resistivity result in a large leakage current, severely limiting the practical application of BIT piezoelectric ceramics in high-temperature fields. Therefore, researchers both domestically and internationally have improved the piezoelectric properties of bismuth-layered ceramics through process modification or trace element doping, by introducing Nb... 5+ Research has found a certain amount of Nb in BIT ceramic materials. 5 + This reduces dielectric loss and increases the resistivity of the ceramic; using W 6+Doping the B-sites of BIT ceramics has shown that the conductivity of the doped ceramic samples decreases by 2-3 orders of magnitude, allowing the ceramics to withstand higher polarization voltages and improving the piezoelectric properties of the ceramic sites. However, due to the two-dimensional limitation of the spontaneous polarization direction determined by its crystal structure, the improvement in piezoelectric coefficient is very limited. Currently, there are two main methods for modifying bismuth layered materials: one is through compositional design by doping or substituting the A and B sites, or by establishing symbiotic structures; the other is through process modification methods that promote directional grain growth, such as rapid plasma sintering, hot forging, hot pressing, and template grain growth methods.

[0004] Bismuth layered high-temperature piezoelectric ceramics have a wide range of applications. Besides being the core material for high-temperature piezoelectric vibration sensors, they can also be used to fabricate high-temperature piezoelectric ceramic capacitors, filters, oscillators, and other components. Furthermore, these materials possess excellent ferroelectric memory properties, making them suitable for fabricating ferroelectric random access memory (FRAM) devices. As a class of functional materials with superior performance, bismuth layered high-temperature piezoelectric ceramics have enormous application potential in the fabrication of piezoelectric components operating under high-temperature and high-frequency conditions. With continuous technological advancements, the application prospects of these materials in various fields will become even broader. Therefore, research on bismuth layered high-temperature piezoelectric ceramics has significant scientific importance and practical application value. Summary of the Invention

[0005] To address the shortcomings of existing technologies, this invention provides a cerium chromium-bismuth titanate-based high-temperature piezoelectric ceramic material and its preparation method, thus solving the problems mentioned in the background art.

[0006] To achieve the above objectives, the present invention provides the following technical solution: a cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material and its preparation method, wherein the material comprises: 0.5%-10% cerium and chromium by weight, and 67%-99.6% bismuth titanate by weight, and the chemical formula of the composition of the material is:

[0007] Bi 4-x Ce x Ti 2.98 Cr 0.02 O 12 .

[0008] A further improvement of the technical solution of the present invention is that: in the chemical formula of the composition, x further includes any of the following values:

[0009] The value of x is: 0.005 ≤ x ≤ 0.015

[0010] A further improvement to the technical solution of the present invention is that it also provides a method for preparing a cerium chromium-bismuth titanate-based high-temperature piezoelectric ceramic material, comprising the following specific steps:

[0011] S1: According to Bi 4-x Ce x Ti 2.98 Cr 0.02 O 12 Raw materials were weighed according to a specific ratio, mixed, and ball-milled for 12–24 h. The mixture was then dried in an oven at 80–100 °C for 10–14 h, followed by calcination in a muffle furnace to obtain Bi. 4-x Ce x Ti 2.98 Cr 0.02 O 12 ;

[0012] S2: The Bi obtained from S1 4-x Ce x Ti 2.98 Cr 0.02 O 12 After mixing, the mixture is ball-milled for 12-24 h and dried in an oven at 80-100 ℃ for 10-14 h to obtain powder.

[0013] S3: After grinding the powder obtained in S2 with polyvinyl alcohol aqueous solution, press it into a green body under a pressure of 10 MPa and hold the pressure for 1~2 min to obtain the green body;

[0014] S4: After removing the binder in a muffle furnace, the preform obtained in S3 is placed in an isostatic press and isostatically pressed. Then, it is placed in a sealed crucible and sintered with the powder prepared in S2 to obtain a cerium chromium-bismuth titanate-based high-temperature piezoelectric ceramic material.

[0015] A further improvement of the technical solution of the present invention is that the raw materials in S1 include Bi2O3, TiO2, CeO2, and Cr2O3.

[0016] A further improvement of the technical solution of the present invention is that the mass ratio of powder, grinding balls and alcohol in S1 and S2 is 1~1.5:2:1.5~1.8, and the rotation speed of the ball mill is 300 r / min.

[0017] A further improvement of the technical solution of the present invention is that: the heating rate of calcination in S1 is 3~5 ℃ / min, the calcination temperature is 800~850 ℃, and the holding time is 4~5 h.

[0018] A further improvement of the technical solution of the present invention is that the mass concentration of the polyvinyl alcohol aqueous solution in S3 is 5~10wt%.

[0019] A further improvement of the technical solution of the present invention is that: the heating rate of glue removal in S4 is 1~5 ℃ / min, the glue removal temperature is 600 ℃, and the heat preservation is 2~4 h.

[0020] A further improvement of the technical solution of the present invention is that: in S4, the isostatic pressure is 100~120 MPa and the pressure holding time is 30 min.

[0021] A further improvement of the technical solution of the present invention is that the heating rate of sintering in S4 is 5 ℃ / min, the sintering temperature is 1060~1120 ℃, and the holding time is 2~3 h.

[0022] Beneficial effects

[0023] This invention provides a cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material and its preparation method. Compared with the prior art, it has the following advantages:

[0024] This cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material and its preparation method, using Bi4Ti3O 12 As the matrix, Ce is introduced 4+ / Cr 3+ Successfully prepared a material with a high Curie temperature (T c Piezoelectric ceramics with good temperature stability (~659 ℃) were obtained, and excellent piezoelectric properties (d) were achieved through composition control and process optimization. 33 ~19.5 pC / N), which has promoted the further development of high-temperature piezoelectric ceramics. Attached Figure Description

[0025] Figure 1 A schematic diagram of the process for preparing temperature piezoelectric ceramic materials;

[0026] Figure 2 for Bi 4-x Ce x Ti 2.98 Cr 0.02 O 12 XRD pattern of ceramics;

[0027] Figure 3 for Bi 4-x Ce x Ti 2.98 Cr 0.02 O 12 A graph showing the relationship between the dielectric constant of ceramics and temperature.

[0028] Figure 4 for Bi 4-x Ce x Ti 2.98 Cr 0.02 O 12 Schematic diagram of the piezoelectric constant d3 of ceramics at different annealing temperatures;

[0029] Figure 5 This is a performance comparison table for Example 1, Example 2, Example 3, and the comparative example. Detailed Implementation

[0030] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0031] This invention provides a cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material and its preparation method. The material comprises 0.5%-10% cerium and chromium by weight, and 67%-99.6% bismuth titanate by weight. The chemical formula of the material composition is:

[0032] Bi 4-x Ce x Ti 2.98 Cr 0.02 O 12 .

[0033] In the chemical formula of the composition, x also includes any of the following values:

[0034] The value of x is: 0.005 ≤ x ≤ 0.015

[0035] This invention also provides a method for preparing a cerium chromium-bismuth titanate-based high-temperature piezoelectric ceramic material, comprising the following specific steps:

[0036] S1: According to Bi 4-x Ce x Ti 2.98 Cr 0.02 O 12 Raw materials were weighed according to a specific ratio, mixed, and ball-milled for 12–24 h. The mixture was then dried in an oven at 80–100 °C for 10–14 h, followed by calcination in a muffle furnace to obtain Bi. 4-x Ce x Ti 2.98 Cr 0.02 O 12 ;

[0037] S2: The Bi obtained from S1 4-x Ce x Ti 2.98 Cr 0.02 O 12 After mixing, the mixture is ball-milled for 12-24 h and dried in an oven at 80-100 ℃ for 10-14 h to obtain powder.

[0038] S3: After grinding the powder obtained in S2 with polyvinyl alcohol aqueous solution, press it into a green body under a pressure of 10 MPa and hold the pressure for 1~2 min to obtain the green body;

[0039] S4: After removing the binder in a muffle furnace, the preform obtained in S3 is placed in an isostatic press and isostatically pressed. Then, it is placed in a sealed crucible and sintered with the powder prepared in S2 to obtain a cerium chromium-bismuth titanate-based high-temperature piezoelectric ceramic material.

[0040] The raw materials in S1 include Bi2O3, TiO2, CeO2, and Cr2O3.

[0041] In S1 and S2, the mass ratio of powder, grinding balls and alcohol is 1~1.5:2:1.5~1.8, and the ball mill speed is 300 r / min.

[0042] The heating rate of calcination in S1 is 3~5 ℃ / min, the calcination temperature is 800~850 ℃, and the holding time is 4~5 h.

[0043] The mass concentration of the polyvinyl alcohol aqueous solution in S3 is 5~10 wt%.

[0044] The heating rate for dispensing glue in S4 is 1~5 ℃ / min, the dispensing temperature is 600 ℃, and the holding time is 2~4 h.

[0045] In S4, the isostatic pressure is 100~120 MPa, and the pressure holding time is 30 min.

[0046] The sintering heating rate in S4 is 5 ℃ / min, the sintering temperature is 1060~1120 ℃, and the holding time is 2~3 h.

[0047] Example 1, when x is 0.0005:

[0048] S1: According to Bi 3.995 Ce 0.005 Ti 2.98 Cr 0.02 O 12 Raw materials were weighed according to a specific ratio, mixed, and ball-milled for 24 h. After drying in an oven at 100 ℃ for 10 h, the mixture was calcined in a muffle furnace at 850 ℃ and held at that temperature for 4 h (calcination heating rate was 3 ℃ / min) to obtain Bi. 3.995 Ce 0.005 Ti 2.98 Cr 0.02 O 12 ;

[0049] S2: The Bi obtained in S1 3.995 Ce 0.005 Ti 2.98 Cr0.02 O 12 After mixing, the mixture was ball-milled for 24 hours and dried in an oven at 100 ℃ for 10 hours to obtain powder.

[0050] S3: After grinding the powder obtained in S2 with 7 wt% polyvinyl alcohol aqueous solution, press it into a cylindrical blank with a diameter of 10 mm and a thickness of 1 mm under a pressure of 10 MPa, and hold the pressure for 2 min to obtain the blank.

[0051] S4: After debinding the preform described in S3 in a muffle furnace, place it in an isostatic press and perform isostatic pressing. Then, place it in a sealed crucible and sinter it with the powder prepared in S2 to obtain the cerium chromium-bismuth titanate-based high-temperature piezoelectric ceramic material.

[0052] The glue removal conditions were: heating rate of 5 ℃ / min, glue removal temperature of 600 ℃, and holding temperature for 3 h.

[0053] The isostatic pressure conditions are: pressure of 120 MPa and holding time of 30 min.

[0054] The sintering conditions were: heating rate of 5 ℃ / min, sintering temperature of 1060 ℃, and holding time of 3 h.

[0055] The ball milling conditions in S1 and S2 are as follows: the mass ratio of powder, grinding balls and alcohol is 1:2:1.5, and the ball mill speed is 300 r / min.

[0056] Example 2, when x is 0.010:

[0057] S1: According to Bi 3.990 Ce 0.010 Ti 2.98 Cr 0.02 O 12 Raw materials were weighed according to a specific ratio, mixed, and ball-milled for 24 h. After drying in an oven at 100 ℃ for 10 h, the mixture was calcined in a muffle furnace at 850 ℃ and held at that temperature for 4 h (calcination heating rate was 3 ℃ / min) to obtain Bi. 3.990 Ce 0.010 Ti 2.98 Cr 0.02 O 12 ;

[0058] S2: The Bi obtained in S1 3.990 Ce 0.010 Ti 2.98 Cr 0.02 O 12 After mixing, the mixture was ball-milled for 24 hours and dried in an oven at 100 ℃ for 10 hours to obtain powder.

[0059] S3: After grinding the powder obtained in S2 with 7 wt% polyvinyl alcohol aqueous solution, press it into a cylindrical blank with a diameter of 10 mm and a thickness of 1 mm under a pressure of 10 MPa, and hold the pressure for 2 min to obtain the blank.

[0060] S4: After debinding the preform described in S3 in a muffle furnace, place it in an isostatic press and perform isostatic pressing. Then, place it in a sealed crucible and sinter it with the powder prepared in S2 to obtain the cerium chromium-bismuth titanate-based high-temperature piezoelectric ceramic material.

[0061] The glue removal conditions were: heating rate of 5 ℃ / min, glue removal temperature of 600 ℃, and holding temperature for 3 h.

[0062] The isostatic pressure conditions are: pressure of 120 MPa and holding time of 30 min.

[0063] The sintering conditions were: heating rate of 5 ℃ / min, sintering temperature of 1060 ℃, and holding time of 3 h.

[0064] The ball milling conditions in S1 and S2 are as follows: the mass ratio of powder, grinding balls and alcohol is 1:2:1.5, and the ball mill speed is 300 r / min.

[0065] Example 3, when x is 0.015:

[0066] S1: According to Bi 3.985 Ce 0.015 Ti 2.98 Cr 0.02 O 12 Raw materials were weighed according to a specific ratio, mixed, and ball-milled for 24 h. After drying in an oven at 100 ℃ for 10 h, the mixture was calcined in a muffle furnace at 850 ℃ and held at that temperature for 4 h (calcination heating rate was 3 ℃ / min) to obtain Bi. 3.985 Ce 0.015 Ti 2.98 Cr 0.02 O 12 ;

[0067] S2: The Bi obtained in S1 3.985 Ce 0.015 Ti 2.98 Cr 0.02 O 12 After mixing, the mixture was ball-milled for 24 hours and dried in an oven at 100 ℃ for 10 hours to obtain powder.

[0068] S3: After grinding the powder obtained in S2 with 7 wt% polyvinyl alcohol aqueous solution, press it into a cylindrical blank with a diameter of 10 mm and a thickness of 1 mm under a pressure of 10 MPa, and hold the pressure for 2 min to obtain the blank.

[0069] S4: After debinding the preform described in S3 in a muffle furnace, place it in an isostatic press and perform isostatic pressing. Then, place it in a sealed crucible and sinter it with the powder prepared in S2 to obtain the cerium chromium-bismuth titanate-based high-temperature piezoelectric ceramic material.

[0070] The glue removal conditions were: heating rate of 5 ℃ / min, glue removal temperature of 600 ℃, and holding temperature for 3 h.

[0071] The isostatic pressure conditions are: pressure of 120 MPa and holding time of 30 min.

[0072] The sintering conditions were: heating rate of 5 ℃ / min, sintering temperature of 1060 ℃, and holding time of 3 h.

[0073] The ball milling conditions in S1 and S2 are as follows: the mass ratio of powder, grinding balls and alcohol is 1:2:1.5, and the ball mill speed is 300 r / min.

[0074] Example 4: To facilitate observation of the performance improvement of the cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material proposed in this application, a comparative example is provided in this example, specifically:

[0075] S1: According to Bi4Ti3O 12 Raw materials were weighed according to the specified ratio, mixed, and ball-milled for 24 h. After drying in an oven at 100 ℃ for 10 h, the mixture was calcined in a muffle furnace at 850 ℃ and held at that temperature for 4 h (calcination heating rate was 3 ℃ / min) to obtain Bi4Ti3O. 12 ;

[0076] S2: The Bi4Ti3O prepared in S1 12 After mixing, the mixture was ball-milled for 24 hours and dried in an oven at 100 ℃ for 10 hours to obtain powder.

[0077] S3: After grinding the powder obtained in S2 with 7 wt% polyvinyl alcohol aqueous solution, press it into a cylindrical blank with a diameter of 10 mm and a thickness of 1 mm under a pressure of 10 MPa, and hold the pressure for 2 min to obtain the blank.

[0078] S4: After debinding the preform described in S3 in a muffle furnace, place it in an isostatic press and perform isostatic pressing. Then, place it in a sealed crucible and sinter it with the powder prepared in S2 to obtain the cerium chromium-bismuth titanate-based high-temperature piezoelectric ceramic material.

[0079] The ceramic materials obtained in Examples 1, 2, 3, and the control group were ground, electrode-plated, and polarized. The polarization electric field was 6-10 kV / mm, the polarization time was 30 min, and the polarization temperature was 180 ℃. The piezoelectric properties of the products were measured as shown in the attached figure. Figure 5 As shown.

[0080] As shown in the attached figure, with Ce 4+ / Cr 3+ The introduction of piezoelectric ceramics d 33 All showed significant improvement, while T c Compared to the comparative example, both showed a slight decrease. When x = 0.010, d 33 The highest is 19.5 pC / N, T c It still reaches 659 ℃, making it the best in terms of overall performance.

[0081] To further explore and demonstrate the performance of cerium chromium-bismuth titanate-based high-temperature piezoelectric ceramic materials, the following... Figure 2 The figures shown are XRD patterns of ceramic materials prepared in Examples 1, 2, 3, and the comparative example of this invention. All samples exhibit the strongest diffraction peak (117) at approximately 30°, consistent with Bi4Ti3O with n = 3. 12 The orthorhombic phase structure showed no second phase detected in the diffraction peaks, indicating that no impurity phase was generated during the sintering process.

[0082] Appendix Figure 3 The dielectric constant of samples with different doping levels varies with temperature. 4+ / Cr 3+ The introduction of dopants increases the Curie temperature T. c It shows a downward trend, but the decline is small, and the Curie temperature remains above 650 ℃;

[0083] Appendix Figure 4 The curves showing the piezoelectric constant of samples with different doping amounts as a function of annealing temperature show that the piezoelectric constant of Ce varies with annealing temperature. 4+ / Cr 3+ Ceramic materials obtained by co-doping d 33 It shows a significant improvement and exhibits good temperature stability in the temperature range of 25~500 ℃, with its temperature stability at 500 ℃ being particularly good. 33 Maintain above 80% of the room temperature.

[0084] In summary, the cerium chromium-bismuth titanate-based high-temperature piezoelectric ceramic material prepared in this application has a high Curie temperature, good temperature stability, and excellent piezoelectric properties.

[0085] Furthermore, all content not described in detail in this specification is existing technology known to those skilled in the art, and the model parameters of each electrical appliance are not specifically limited; conventional equipment can be used.

[0086] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0087] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material, characterized in that, The material comprises: 0.5%-10% cerium and chromium by weight, and 67%-99.6% bismuth titanate by weight, wherein the chemical formula of the composition of the material is: Bi 4-x What x IT 2.98 -R 0.02 A 12 。 2. The cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material according to claim 1, characterized in that, In the chemical formula of the composition, x also includes any of the following values: The value of x is: 0.005 ≤ x ≤ 0.

015.

3. A method for preparing a cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material, applied to the cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material according to any one of claims 1-2, characterized in that, The specific steps include the following: S1: According to Bi 4-x Ce x Ti 2.98 Cr 0.02 O 12 Raw materials were weighed according to a specific ratio, mixed, and ball-milled for 12–24 h. The mixture was then dried in an oven at 80–100 °C for 10–14 h, followed by calcination in a muffle furnace to obtain Bi. 4-x Ce x Ti 2.98 Cr 0.02 O 12 ; S2: The Bi obtained from S1 4-x Ce x Ti 2.98 Cr 0.02 O 12 After mixing, the mixture is ball-milled for 12-24 hours and dried in an oven at 80-100 ℃ for 10-14 hours to obtain powder. S3: After grinding the powder obtained in S2 with polyvinyl alcohol aqueous solution, press it into a green body under a pressure of 10 MPa and hold the pressure for 1~2 min to obtain the green body; S4: After removing the binder in a muffle furnace, the preform obtained in S3 is placed in an isostatic press and isostatically pressed. Then, it is placed in a sealed crucible and sintered with the powder prepared in S2 to obtain a cerium chromium-bismuth titanate-based high-temperature piezoelectric ceramic material.

4. The method for preparing a cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material according to claim 3, characterized in that: The raw materials in S1 include Bi2O3, TiO2, CeO2, and Cr2O3.

5. The method for preparing a cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material according to claim 3, characterized in that: In S1 and S2, the mass ratio of powder, grinding balls and alcohol is 1~1.5:2:1.5~1.8, and the ball mill speed is 300 r / min.

6. The method for preparing a cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material according to claim 3, characterized in that: The heating rate of calcination in S1 is 3~5 ℃ / min, the calcination temperature is 800~850 ℃, and the holding time is 4~5 h.

7. The method for preparing a cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material according to claim 3, characterized in that: The mass concentration of the polyvinyl alcohol aqueous solution in S3 is 5~10 wt%.

8. The method for preparing a cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material according to claim 3, characterized in that: The heating rate for dispensing glue in S4 is 1~5 ℃ / min, the dispensing temperature is 600 ℃, and the holding time is 2~4 h.

9. The method for preparing a cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material according to claim 3, characterized in that: In step S4, the isostatic pressure is 100~120 MPa, and the pressure holding time is 30 min.

10. The method for preparing a cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material according to claim 3, characterized in that: The sintering heating rate in S4 is 5 ℃ / min, the sintering temperature is 1060~1120 ℃, and the holding time is 2~3 h.

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