Quantum dot luminescent material, quantum dot patterning method, quantum dot film and display device

Abstract

The invention discloses a quantum dot luminescent material, a quantum dot patterning method, a quantum dot film and a display device. The quantum dot luminescent material comprises a plurality of quantum dots, a plurality of ligands and a plurality of cross-linking reactants, wherein the ligands are connected with the quantum dots; the cross-linking reactant is configured to perform a cross-linking reaction to connect at least two quantum dots, and the cross-linking reactant is a cross-linking molecule or a cross-linking group; the quantum dot and the crosslinking reactant meet at least one of the following conditions: the lowest unoccupied molecular orbital (LUMO) energy level of the crosslinking reactant is located outside the band gap of the quantum dot; the highest occupied molecular orbital (HOMO) energy level of a crosslinking reactant is located outside the band gap of the quantum dot. The quantum dot light-emitting layer prepared from the quantum dot light-emitting material provided by the invention can reduce or prevent photon-generated carriers generated by quantum dot excitation from being transferred to a cross-linking reactant to a certain extent, so that the performance of a display device is improved.

Description

Technical Field

[0001] The present application belongs to the field of display technology, and in particular relates to a quantum dot luminescent material, a quantum dot patterning method, a quantum dot film and a display device. Background Art

[0002] Quantum dots (QDs) have the characteristics of size-dependent luminescence, narrow half-peak wave width, high photoluminescence efficiency and thermal stability. Quantum dot light emitting diodes (QLEDs) with quantum dots as the luminescence center have become highly promising next-generation light-emitting devices.

[0003] However, the luminescence performance of such quantum dot luminescent layers having quantum dots needs to be improved. Summary of the invention

[0004] The purpose of the present application is to provide a quantum dot luminescent material, a quantum dot patterning method, a quantum dot film and a display device, aiming to solve the problem that the luminescent performance of a quantum dot luminescent layer having quantum dots needs to be improved.

[0005] The first aspect of the present application provides a quantum dot luminescent material, the quantum dot luminescent material comprising:

[0006] Multiple quantum dots;

[0007] Multiple ligands, the ligands are connected to the quantum dots;

[0008] a plurality of cross-linking reactants, the cross-linking reactants are configured to undergo a cross-linking reaction to connect at least two quantum dots, the cross-linking reactants are cross-linking molecules or cross-linking groups;

[0009] The quantum dots and the cross-linking reactants satisfy at least one of the following:

[0010] The lowest unoccupied molecular orbital LUMO energy level of the cross-linking reactants is outside the band gap of the quantum dots;

[0011] The highest occupied molecular orbital (HOMO) energy level of the crosslinking reactant is outside the band gap of the quantum dots.

[0012] In some embodiments, the valence band of the quantum dot is greater than the HOMO energy level of the cross-linking reactant, and the energy level difference between the valence band of the quantum dot and the HOMO energy level of the cross-linking reactant is greater than 0.2 eV.

[0013] In some embodiments, the conduction band of the quantum dots is smaller than the LUMO energy level of the crosslinking reactant, and the energy level difference between the conduction band of the quantum dots and the LUMO energy level of the crosslinking reactant is greater than 0.2 eV.

[0014] In some embodiments, the cross-linking reactant is a cross-linking molecule, which includes at least two photosensitive groups, and the photosensitive groups are configured to undergo a photo-cross-linking reaction with the active groups of the ligand.

[0015] In some embodiments, the number of photosensitive groups disposed in one cross-linking reactant is n, 2≤n≤6.

[0016] In some embodiments, the cross-linking molecule has a structure shown in the following formula (1):

[0017] PRP(1),

[0018] Where P is a photosensitive group.

[0019] In some embodiments, R is an aromatic group, an aliphatic group, or a heterocyclic group containing a benzene ring structure;

[0020] In some embodiments, R includes at least one halogen element;

[0021] In some embodiments, R includes at least one alkali metal element;

[0022] In some embodiments, the cross-linked molecule has any of the following structures:

[0023]

[0024]

[0025] In some embodiments, the cross-linking reactant is a cross-linking group connected to the ligand, and the cross-linking group is configured to undergo a photo-cross-linking reaction with an active group of the ligand.

[0026] In some embodiments, the multiple ligands include a first ligand and a second ligand, a quantum dot is coordinated and connected to the first ligand and the second ligand respectively, the first ligand is connected to a cross-linking group, and the cross-linking group is configured to undergo a photo-cross-linking reaction with an active group of the second ligand.

[0027] In some embodiments, the multiple quantum dots include a first quantum dot and a second quantum dot, the multiple ligands include a first ligand and a second ligand, the first quantum dot is coordinated and connected to the first ligand, the second quantum dot is coordinated and connected to the second ligand, the first ligand is connected to a cross-linking group, and the cross-linking group is configured to undergo photo-cross-linking reaction with the second ligand.

[0028] In some embodiments, the quantum dots are any of the following: red light quantum dots, green light quantum dots, blue light quantum dots.

[0029] In some embodiments, in the quantum dot luminescent material, the mass ratio of quantum dots to cross-linking reactants is 1% to 10%.

[0030] In some embodiments, the quantum dots are red light quantum dots, and in the quantum dot luminescent material, the mass ratio of the red light quantum dots to the cross-linking reactant is 1% to 6%.

[0031] In some embodiments, the quantum dots are green light quantum dots, and in the quantum dot luminescent material, the mass ratio of the green light quantum dots to the cross-linking reactant is 1% to 8%.

[0032] In some embodiments, the quantum dots are blue light quantum dots, and in the quantum dot luminescent material, the mass ratio of the blue light quantum dots to the cross-linking reactant is 1% to 8%.

[0033] The second aspect of the present application provides a quantum dot patterning method, comprising:

[0034] Forming a first material layer on the first interface layer using the quantum dot light-emitting material provided in the first aspect;

[0035] Expose the first region to allow the cross-linking reactant to undergo a photo-cross-linking reaction to connect at least two quantum dots, wherein the first material layer includes the first region and the second region;

[0036] The first material layer is developed to remove the portion of the first material layer located in the second region, thereby obtaining a patterned first quantum dot light-emitting layer.

[0037] In some embodiments, the method further comprises:

[0038] Forming a second material layer on the first interface layer with the quantum dot luminescent material provided in the first aspect, wherein the second material layer includes quantum dots configured to emit second color light, and the first material layer includes quantum dots configured to emit first color light;

[0039] Expose the third region to allow the cross-linking reactant to undergo a photo-cross-linking reaction to connect at least two quantum dots, wherein the second material layer includes the third region and the fourth region;

[0040] The second material layer is developed to remove the portion of the second material layer located in the fourth region to obtain a patterned second quantum dot light-emitting layer. The first quantum dot light-emitting layer and the second quantum dot light-emitting layer are disposed on the first interface layer.

[0041] According to a third aspect of the present application, there is provided a quantum dot film, comprising a first quantum dot light-emitting layer and a second quantum dot light-emitting layer, wherein the first quantum dot light-emitting layer is configured to emit a first color light and adopts the above-mentioned quantum dot light-emitting material, and the first quantum dot light-emitting layer is configured to emit a second color light.

[0042] A fourth aspect of the present application provides a display device, characterized in that it includes: a quantum dot film as provided in the third aspect.

[0043] In some embodiments, the light emitting device comprises:

[0044] bottom electrode;

[0045] A first carrier transport layer is disposed on one side of the bottom electrode;

[0046] A second carrier transport layer is disposed on a side of the first carrier transport layer away from the bottom electrode;

[0047] A top electrode is disposed on a side of the second carrier transport layer facing away from the bottom electrode;

[0048] The quantum dot film is arranged between the first carrier transport layer and the second carrier transport layer.

[0049] According to the quantum dot luminescent material, quantum dot patterning method, quantum dot film and display device of the embodiments of the present application, a cross-linking reactant is set in the quantum dot luminescent material so that the cross-linking reactant can undergo a cross-linking reaction to connect at least two quantum dots to form a grid structure, thereby improving the stability of multiple quantum dots; by setting the lowest unoccupied molecular orbital LUMO energy level of the cross-linking reactant to be outside the band gap of the quantum dots, or the highest occupied molecular orbital HOMO energy level of the cross-linking reactant to be outside the band gap of the quantum dots, the transfer of photogenerated carriers generated by the excitation of the quantum dots to the cross-linking reactant can be reduced or avoided to a certain extent, reducing the decrease in the yield of photoluminescence quanta, improving the luminescence performance of the quantum dot luminescent layer prepared from the quantum dot luminescent material, and improving the luminescence performance of the display device using the quantum dot luminescent layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0051] Figure 1 A schematic diagram of the structure of a quantum dot luminescent material provided in an embodiment of the present application;

[0052] Figure 2 A schematic diagram of a cross-linking principle of a quantum dot luminescent material provided in an embodiment of the present application;

[0053] Figure 3 A schematic diagram of a cross-linking principle of a quantum dot luminescent material provided in an embodiment of the present application;

[0054] Figure 4 A schematic diagram for comparing the energy levels of quantum dots and cross-linking reactants provided in the embodiments of the present application;

[0055] Figure 5 A schematic diagram for comparing the energy levels of quantum dots and cross-linking reactants provided in the embodiments of the present application;

[0056] Figure 6 A schematic diagram for comparing the energy levels of quantum dots and cross-linking reactants provided in the embodiments of the present application;

[0057] Figure 7 A schematic diagram for comparing the energy levels of quantum dots and multiple cross-linking reactants provided in the embodiments of the present application;

[0058] Figure 8 A schematic diagram of the preparation process of the first quantum dot light-emitting layer provided in an embodiment of the present application;

[0059] Fig. 9 A schematic diagram of the preparation process of the second quantum dot light-emitting layer provided in an embodiment of the present application;

[0060] Fig.10 A schematic diagram of the structure of a display device provided in an embodiment of the present application.

[0061] The figures are as follows:

[0062] 1. Quantum dots; 2. Ligands; 3. Cross-linking reactants;

[0063] 100. Quantum dot film;

[0064] 11. Bottom electrode; 12. First carrier transport layer; 13. Second carrier transport layer; 14. Top electrode; 15. Substrate; 16. First carrier injection layer; 17. Second carrier injection layer;. DETAILED DESCRIPTION

[0065] The following detailed description and drawings of the embodiments of the present application are used to illustrate the principles of the present application, but cannot be used to limit the scope of the present application, that is, the present application is not limited to the described embodiments.

[0066] In the description of the present application, it should be noted that, unless otherwise specified, "multiple" means more than two; the terms "upper", "lower", "left", "right", "inside", "outside", etc., indicating the orientation or positional relationship, are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. "Vertical" is not strictly vertical, but is within the allowable error range. "Parallel" is not strictly parallel, but is within the allowable error range.

[0067] Reference to "embodiments" in this application means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described in this application may be combined with other embodiments.

[0068] The directional words appearing in the following description are all directions shown in the figures, and do not limit the specific structure of this application. In the description of this application, it should also be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0069] Quantum dots, also known as semiconductor nanocrystals, are a new type of semiconductor nanomaterial. Due to the quantum size effect and electrical confinement effect, they have unique photoluminescence and electroluminescence properties. Compared with traditional organic fluorescent dyes, quantum dots have high quantum yield, high photochemical stability, not easy to photolyze, as well as wide excitation, narrow emission, high color purity, and the luminescence color can be conditioned by controlling the size of quantum dots. At present, a quantum dot light-emitting layer can be formed by direct photolithography. In the process of preparing the quantum dot light-emitting layer by direct photolithography, part of the quantum dots can be cross-linked by cross-linking reactants, so that the cross-linked quantum dots can be retained and the uncross-linked quantum dots can be stripped to obtain a patterned quantum dot light-emitting layer. In the quantum dot light-emitting layer, the cross-linking reactants are easy to cause photogenerated carrier transfer, resulting in a decrease in the photoluminescence quantum yield (PLQY) of the quantum dot light-emitting layer, affecting the luminescence performance of the quantum dot light-emitting layer.

[0070] To solve the above problems, the embodiments of the present application provide a quantum dot luminescent material, a quantum dot patterning method, a quantum dot film and a display device. The following describes the various embodiments of the quantum dot luminescent material, the quantum dot patterning method, the quantum dot film and the display device in conjunction with the accompanying drawings.

[0071] Please refer to Figure 1 , Figure 2 and Figure 3In a first aspect, the present application provides a quantum dot luminescent material, the quantum dot luminescent material comprising a plurality of quantum dots 1, a plurality of ligands 2 and a plurality of cross-linking reactants 3, the ligands 2 being connected to the quantum dots 1; the cross-linking reactants 3 being configured to undergo a cross-linking reaction to connect at least two quantum dots 1, the cross-linking reactants 3 being cross-linking molecules or cross-linking groups;

[0072] The quantum dots 1 and the cross-linking reactant 3 satisfy at least one of the following:

[0073] (1) The lowest unoccupied molecular orbital (LUMO) energy level of the cross-linking reactant 3 is outside the band gap of the quantum dot 1;

[0074] (2) The highest occupied molecular orbital (HOMO) energy level of the cross-linking reactant 3 is outside the band gap of quantum dot 1.

[0075] Quantum dot luminescent materials can be used to prepare quantum dot luminescent layers in display devices. Quantum dots 1 (Quantum Dots, QDs) are semiconductor nanocrystals with a radius less than or close to the exciton Bohr radius, and are a type of zero-dimensional nanomaterial. Quantum dots 1 can be excited to produce fluorescence, and quantum dots 1 of different sizes can emit different colors, so the patterned quantum dot luminescent layer prepared by quantum dot luminescent materials can be used to display images.

[0076] The quantum dot 1 may be an inorganic nanoparticle of nanometer size, and the ligand 2 may be coated on the surface of the quantum dot 1, and the ligand 2 may provide colloidal stability for the quantum dot 1. The physical and chemical properties of the quantum dot 1 connected with the ligand 2, such as light, magnetism, etc., are mainly determined by its inorganic core, that is, by the quantum dot 1. The processability of the quantum dot 1 connected with the ligand 2 is mainly determined by the ligand 2, so that the quantum dot 1 connected with the ligand 2 can form a complex structure. Therefore, those skilled in the art can select ligands 2 with different physical and chemical properties to coordinate and connect with the quantum dot 1 as needed, so that the quantum dot 1 connected with the ligand 2 has different properties.

[0077] The quantum dots 1 can be selected from: II-VI group quantum dots, such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgSe, HgTe, HgS, Hg x Cd1-xTe、Hg x Cd1-xS、Hg x Cd1-xSe、Hg x Zn1-xTe、Cd x Zn1-xSe, or Cd xZn1-xS, where 0 < x < 1; or group III-V quantum dots 1, such as InP, InAs, InSb, GaAs, GaP, GaN, GaSb, InN, InSb, AlP, AlN, AlAs; or group VI-VI quantum dots, such as PbS, PbSe, PbTe; or, quantum dots with a core-shell structure, including CdSe@ZnS, CdSe@CdS, InP@ZnS, CdTe@CdSe, CdSe@ZnTe, ZnTe@CdSe, ZnSe@CdS or Cd1-xZn x S@ZnS; or ABX3-type perovskite quantum dots 1, A is one or more of CH3NH3+(methylamine), NH2CH=NH2(formamidine), Cs+; B is Pb 2+ 、Sn 2+ One or two of them, X is Cl-, Br - 、I - One or more of them, including CH3NH3PbBr3, CH3NH3PbCl3, CH3NH3PbI3, CsPbBr3, CsPbCl3, CsPbI3; or other quantum dots, such as CuInS2, CuInSe2, AgInS2, etc.

[0078] The crosslinking reaction refers to the reaction in which two or more molecules are bonded to each other to form a network structure. The crosslinking reactant 3 can connect at least two quantum dots 1 by undergoing a crosslinking reaction to improve the stability of multiple quantum dots 1. In the embodiments of the present application, the crosslinking reactant 3 is a crosslinking molecule or a crosslinking group. The crosslinking reactant 3 can be a reactant containing a carbon-carbon unsaturated bond, a reactant of isocyanate type, a reactant of bis-azide type, a reactant containing a ketone group, a halogen-containing Lewis acid, a halogen-containing Lewis base, etc. Optionally, the crosslinking reactant 3 can be benzophenone and its derivatives.

[0079] Please refer to Figure 1 When the crosslinking reactant 3 is a crosslinking molecule, the crosslinking molecule and the quantum dots 1 are mixed. Please refer to Figure 2 Under the reaction conditions required for the crosslinking reaction, the reaction conditions required for the crosslinking reaction can be irradiation with light waves of a preset wavelength as shown in Figure 2 , and the crosslinking molecule is excited. Please refer to Figure 3 The crosslinking molecule undergoes a crosslinking reaction to connect at least two quantum dots 1. Under the connection of multiple crosslinking molecules, multiple quantum dots 1 form a network structure. When the crosslinking reactant 3 is a crosslinking group, the crosslinking group can be connected to the quantum dots 1 through a ligand by a chemical bond. Under the reaction conditions required for the crosslinking reaction, the crosslinking group undergoes a crosslinking reaction to connect at least two quantum dots 1, and multiple quantum dots 1 form a network structure.

[0080] The quantum dot luminescent material can form a quantum dot luminescent layer based on a direct photolithography process. For example, a material layer is first formed using a quantum dot luminescent material, and a target area of ​​the material layer is exposed using a mask with an opening, so that the quantum dots 1 in the target area undergo a photo-crosslinking reaction with the crosslinking reactant 3, and the quantum dots 1 in the target area form a grid structure, so that the stability of the material layer in the target area is higher than that of the material layer in the non-target area. The material layer is developed to remove the material layer in the non-target area to obtain a patterned quantum dot luminescent layer. The quantum dots 1 in the quantum dot luminescent layer generate photogenerated carriers, i.e., electrons and holes, after being excited by light, and emit photons when the electrons and holes recombine, and the quantum dot luminescent layer emits light of a color corresponding to the size of the quantum dots 1.

[0081] For any band structure, the energy band with the highest energy filled by electrons is called the valence band; the energy band with the lowest energy not filled by electrons is called the conduction band; the energy difference between the bottom of the conduction band and the top of the valence band is called the band gap. For organic materials, organic materials have frontier orbitals, and the frontier orbital energy levels include the highest occupied molecular orbital (HOMO) energy level and the lowest unoccupied molecular orbital (LUMO) energy level. Therefore, the frontier orbital energy level of the cross-linking reactant 3 is outside the band gap of the quantum dot 1, including the following situations,

[0082] (1) Figure 4 As shown, the lowest unoccupied molecular orbital LUMO energy level of the cross-linking reactant 3 is located outside the band gap of the quantum dot 1, and the highest occupied molecular orbital HOMO energy level of the cross-linking reactant 3 is located within the band gap of the quantum dot 1;

[0083] (2) Figure 5 As shown, the lowest unoccupied molecular orbital LUMO energy level of the cross-linking reactant 3 is located within the band gap of the quantum dot 1, and the highest occupied molecular orbital HOMO energy level of the cross-linking reactant 3 is located outside the band gap of the quantum dot 1;

[0084] (3) Figure 6 As shown, the lowest unoccupied molecular orbital LUMO energy level of the cross-linking reactant 3 is located outside the band gap of the quantum dot 1, and the highest occupied molecular orbital HOMO energy level of the cross-linking reactant 3 is located outside the band gap of the quantum dot 1.

[0085] By setting the lowest unoccupied molecular orbital LUMO energy level of the cross-linked reactant 3 to be outside the band gap of the quantum dot 1, or the highest occupied molecular orbital HOMO energy level of the cross-linked reactant 3 to be outside the band gap of the quantum dot 1, the photogenerated carriers generated by the excitation of the quantum dot 1 can be reduced or avoided to a certain extent, and the decrease in the yield of the photoluminescence quantum (Photoluminescence Quantum Yield, PLQY) can be reduced, and the luminescence performance of the quantum dot light-emitting layer prepared by the quantum dot light-emitting material can be improved. Optionally, the HOMO energy level and LUMO energy level of the cross-linked reactant 3 can be determined using a solution electrochemical method.

[0086] In the embodiments provided in the present application, a cross-linking reactant 3 is provided in the quantum dot luminescent material so that the cross-linking reactant 3 can undergo a cross-linking reaction to connect at least two quantum dots 1 to form a grid structure, thereby improving the stability of the plurality of quantum dots 1; by providing the lowest unoccupied molecular orbital LUMO energy level of the cross-linking reactant 3 to be located outside the band gap of the quantum dot 1, or the highest occupied molecular orbital HOMO energy level of the cross-linking reactant 3 to be located outside the band gap of the quantum dot 1, the transfer of photogenerated carriers generated by the excitation of the quantum dot 1 to the cross-linking reactant 3 can be reduced or avoided to a certain extent, thereby reducing the decrease in the yield of photoluminescence quanta, improving the luminescence performance of the quantum dot luminescent layer prepared from the quantum dot luminescent material, and improving the luminescence performance of the display device using the quantum dot luminescent layer.

[0087] In some embodiments, the valence band of the quantum dot 1 is greater than the HOMO energy level of the cross-linking reactant 3 , and the energy level difference between the valence band of the quantum dot 1 and the HOMO energy level of the cross-linking reactant 3 is greater than 0.2 eV.

[0088] The valence band of quantum dot 1 is greater than the HOMO energy level of cross-linked reactant 3, that is, the HOMO energy level of cross-linked reactant 3 is deeper than the band gap of quantum dot 1. In the quantum dot light-emitting layer formed by the quantum dot light-emitting material, since the valence band of quantum dot 1 is greater than the HOMO energy level of cross-linked reactant 3, the transfer of photogenerated carriers in the valence band to the cross-linked reactant 3 is avoided or reduced to a certain extent. The photogenerated carriers in the valence band can be holes generated by the excitation of quantum dot 1. The energy level difference between the valence band of quantum dot 1 and the HOMO energy level of cross-linked reactant 3 is greater than 0.2 eV, which can effectively reduce or avoid the transfer of photogenerated carriers in the valence band to the cross-linked reactant 3.

[0089] When the valence band of the quantum dot 1 is smaller than the HOMO energy level of the selected crosslinking reactant, the HOMO energy level of the crosslinking reactant can be increased by increasing the ionization energy of the crosslinking reactant, for example, by setting a chemical element with a larger ionization energy in the crosslinking reactant 3 .

[0090] In some embodiments, the conduction band of quantum dot 1 is smaller than the LUMO energy level of cross-linking reactant 3 , and the energy level difference between the conduction band of quantum dot 1 and the LUMO energy level of cross-linking reactant 3 is greater than 0.2 eV.

[0091] The conduction band of quantum dot 1 is smaller than the LUMO energy level of cross-linked reactant 3, that is, the LUMO energy level of cross-linked reactant 3 is shallower than the band gap of quantum dot 1. In the quantum dot light-emitting layer formed by the quantum dot light-emitting material, since the conduction band of quantum dot 1 is smaller than the LUMO energy level of cross-linked reactant 3, the transfer of photogenerated carriers in the conduction band to the cross-linked reactant 3 is avoided or reduced to a certain extent. The photogenerated carriers in the conduction band can be electrons excited by quantum dot 1. The energy level difference between the conduction band of quantum dot 1 and the LUMO energy level of cross-linked reactant 3 is greater than 0.2 eV, which can effectively reduce or avoid the transfer of photogenerated carriers in the conduction band to the cross-linked reactant 3.

[0092] When the conduction band of the quantum dot 1 is greater than the LUMO energy level of the selected crosslinking reactant, the LUMO energy level of the crosslinking reactant can be increased by reducing the affinity of the crosslinking reactant. For example, a chemical element with a larger atomic radius is provided in the crosslinking reactant 3.

[0093] In some embodiments, the cross-linking reactant 3 is a cross-linking molecule, which includes at least two photosensitive groups, and the photosensitive groups are configured to undergo a photo-cross-linking reaction with the active groups of the ligand 2 .

[0094] The coordination functional group in ligand 2 that coordinates with quantum dot 1 can be selected from carboxyl (-COOH), sulfonic acid (-SO3H), hydroxyl (-OH), thiol (-SH), amino (-NH2), etc., but is not limited thereto. In addition, a ligand 2 can contain one or more coordination functional groups, such as 1, 2, or 3 coordination functional groups, and the coordination functional groups are independently selected from the above groups. Among the n ligands 2 coordinated with the same quantum dot 1, all of the n ligands 2 may include active groups that can undergo photocrosslinking reactions with photosensitive groups, or some of the n ligands 2 may include active groups that can undergo photocrosslinking reactions with photosensitive groups.

[0095] The photo-crosslinking reaction is a crosslinking chemical reaction in which the reactants absorb light energy. The crosslinking molecule includes at least two photosensitive groups, and a photosensitive group in the crosslinking molecule undergoes a photo-crosslinking reaction with an active group of a ligand 2, so that the active groups of n ligands 2 can be connected through the n photosensitive groups in the crosslinking molecule, and multiple quantum dots 1 form a grid structure through the crosslinked photosensitive groups-active groups. The photosensitive groups in the crosslinking molecules can be the same functional groups or different functional groups.

[0096] In some embodiments, the number of photosensitive groups disposed in one cross-linking reactant 3 is n, and 2≤n≤6.

[0097] The n photosensitive groups can undergo photocrosslinking reactions with the active groups of the ligand 2 one by one, forming n crosslinked photosensitive group-active groups. In the case where the n photosensitive groups undergo photocrosslinking reactions with the active groups of the n quantum dots 1 respectively, one crosslinking reactant 3 can connect n quantum dots 1. For example: when there are 6 photosensitive groups in a crosslinking reactant 3, the crosslinking reactant 3 can connect up to 6 quantum dots 1 through photocrosslinking reactions. Increasing the number of photosensitive groups in a crosslinking reactant 3 can improve the crosslinking efficiency. Those skilled in the art can set the required number of photosensitive groups in a crosslinking reactant 3 as needed.

[0098] In some embodiments, the cross-linking molecule has a structure shown in the following formula (1):

[0099] PRP(1),

[0100] Where P is a photosensitive group.

[0101] The two photosensitive groups P connected to the R group can undergo photo-crosslinking reactions with the two active groups respectively, thereby connecting the two quantum dots.

[0102] In some embodiments, R is an aromatic group, an aliphatic group or a heterocyclic group containing a benzene ring structure to improve the stability of the cross-linked molecule itself.

[0103] In some embodiments, R includes at least one halogen element.

[0104] Among the elements in the same period, the ionization energy increases gradually from left to right, so adding a halogen element to R increases the ionization energy of the cross-linked molecule to improve the HOMO energy level of the cross-linked reactant. One or more halogen elements can be set in R, and the halogen element in R can be a halogen group.

[0105] In some embodiments, R includes at least one alkali metal element.

[0106] Alkali metal elements are added to R to reduce the ionization energy of the cross-linked molecules, so as to reduce the HOMO energy level of the cross-linked reactants. One or more alkali metal elements can be set in R, and the alkali metal elements in R can be alkali metal groups.

[0107] In some embodiments, the cross-linked molecule has any of the following structures:

[0108]

[0109]

[0110] The cross-linking molecules shown in formula (2), formula (3) and formula (4) can be cross-linked with two active groups through two -N3 groups. The cross-linking molecule shown in formula (5) can be cross-linked with two active groups through two diazo groups.

[0111] In some embodiments, the cross-linking reactant 3 is a cross-linking group connected to the ligand 2 , and the cross-linking group is configured to undergo a photo-cross-linking reaction with the active group of the ligand 2 .

[0112] One quantum dot 1 can coordinate and connect multiple ligands 2, and one ligand 2 can be connected to one or more cross-linking groups, so the quantum dot 1 can be connected to multiple cross-linking groups through the ligand 2 as needed. The cross-linking groups connected to the same quantum dot 1 can be different, and the cross-linking groups connected to the same ligand 2 can also be different, so those skilled in the art can select different cross-linking groups and select a suitable number of cross-linking groups to connect to the same quantum dot 1 as needed.

[0113] In some embodiments, the multiple ligands 2 include a first ligand and a second ligand, a quantum dot 1 is coordinated and connected to the first ligand and the second ligand respectively, the first ligand is connected to the cross-linking group, and the cross-linking group is configured to undergo a photo-cross-linking reaction with the active group of the second ligand.

[0114] The plurality of ligands 2 may also include other ligands 2 in addition to the first ligand and the second ligand, the first ligand may be connected to one or more cross-linking groups, and the second ligand may include at least one active group. Under the reaction conditions of the photo-crosslinking reaction, the cross-linking group in the first ligand may be connected to the active group of the second ligand. For example: by connecting the cross-linking group A in the first ligand connected to the quantum dot 1A to the active group B of the second ligand connected to the quantum dot 1B, the quantum dot 1A may be connected to the quantum dot 1B. By connecting the active group B of the second ligand connected to the quantum dot 1A to the cross-linking group A in the first ligand connected to the quantum dot 1B, the quantum dot 1A may be connected to the quantum dot 1B.

[0115] In other embodiments, the multiple quantum dots 1 include a first quantum dot and a second quantum dot, the multiple ligands 2 include a first ligand and a second ligand, the first quantum dot is coordinated and connected to the first ligand, the second quantum dot is coordinated and connected to the second ligand, the first ligand is connected to a cross-linking group, and the cross-linking group is configured to undergo a photo-cross-linking reaction with the second ligand.

[0116] The plurality of ligands 2 may also include other ligands 2 in addition to the first ligand and the second ligand, and the first quantum dot and the second quantum dot may be connected to other identical or different ligands 2. The first ligand is connected to a crosslinking group, and the crosslinking group is configured to undergo a photo-crosslinking reaction with the second ligand, so that the first quantum dot and the second quantum dot can be connected through a photo-crosslinking reaction between the crosslinking group and the second ligand, and the photo-crosslinking reaction between the crosslinking group and the active group connected to the same quantum dot 1 is avoided.

[0117] For example, the first quantum dot A can be connected to the second quantum dot B by connecting the cross-linking group A in the first ligand connected to the first quantum dot A with the active group B of the second ligand connected to the second quantum dot B.

[0118] Those skilled in the art can determine the quantum dot 1 according to the band gap of each quantum dot material, and determine the cross-linking reactant 2 according to the frontier orbital energy level of the cross-linking reaction material.

[0119] See also Figure 7 , illustratively, the LUMO energy level of the cross-linked molecule as shown in the molecular formula (2) is -4.81eV, and when the quantum dot 1 is CdSe@ZnS, the conduction band of the quantum dot 1 is -4.0eV. The cross-linked molecule as shown in the molecular formula (2) is selected to be mixed with the quantum dot 1 to form a quantum dot luminescent material A, and the quantum dot luminescent layer A is prepared using the quantum dot luminescent material A. The LUMO energy level of the cross-linked molecule as shown in the molecular formula (5) is -3.58eV. The cross-linked molecule as shown in the molecular formula (5) is mixed with the quantum dot 1 to form a quantum dot luminescent material B, and the quantum dot luminescent layer B is prepared using the quantum dot luminescent material.

[0120] The display device having the quantum dot light-emitting layer A and the display device having the quantum dot light-emitting layer B were subjected to luminescence detection, and the results shown in Table 1 were obtained.

[0121] Table 1

[0122]

[0123] In quantum dot light-emitting layer A, since the LUMO energy level of the cross-linked molecules is smaller than the QD conduction band energy level, electron transfer from quantum dots to cross-linked molecules will occur, resulting in quantum dot fluorescence quenching. In quantum dot light-emitting layer B, since the LUMO energy level of the cross-linked molecules is larger than the QD conduction band energy level, there is no electron transfer between quantum dots and cross-linked molecules, thus avoiding the decrease in luminescence of the quantum dot light-emitting layer caused by electron transfer to the cross-linked molecules. From the experimental results, it can be seen that when quantum dot light-emitting layer A and quantum dot light-emitting layer B are used for light-emitting display, the luminescence efficiency of quantum dot light-emitting layer A is lower than that of quantum dot light-emitting layer B. When the same nits of light waves are continuously emitted, the decrease in the service life of quantum dot light-emitting layer A is greater than the decrease in the service life of quantum dot light-emitting layer B.

[0124] In some embodiments, the quantum dot 1 is any one of the following: red light quantum dot 1, green light quantum dot 1, blue light quantum dot 1.

[0125] The quantum dot luminescent material may contain only quantum dots 1 for emitting one color of light. When the quantum dots 1 in the quantum dot luminescent material are red light quantum dots 1, the quantum dot luminescent layer prepared from the quantum dot luminescent material is used to excite and produce red light. When the quantum dots 1 in the quantum dot luminescent material are green light quantum dots 1, the quantum dot luminescent layer prepared from the quantum dot luminescent material is used to excite and produce green light. When the quantum dots 1 in the quantum dot luminescent material are blue light quantum dots 1, the quantum dot luminescent layer prepared from the quantum dot luminescent material is used to excite and produce blue light.

[0126] A patterned red light-emitting layer, a patterned green light-emitting layer and a patterned blue light-emitting layer can be prepared respectively by using a quantum dot light-emitting material having red light quantum dots 1, a quantum dot light-emitting material having green light quantum dots 1 and a quantum dot light-emitting material having blue light quantum dots 1. The patterned red light-emitting layer, the green light-emitting layer and the blue light-emitting layer can be combined together to perform light-emitting displays of different colors.

[0127] In some embodiments, in the quantum dot luminescent material, the mass ratio of the quantum dots 1 to the cross-linking reactant 3 is 1% to 10%.

[0128] If there is too little cross-linking reactant 3 in the quantum dot luminescent material, the material layer located in the target area of ​​the patterned quantum dot luminescent layer after development treatment will be completely or partially removed along with the material layer located in the non-target area. The mass ratio of quantum dots 1 to cross-linking reactant 3 is set to 1% to 10%, so that the material layer located in the target area can be retained after development treatment.

[0129] In some embodiments, the quantum dots 1 are red light quantum dots 1 , and in the quantum dot luminescent material, the mass ratio of the red light quantum dots 1 to the cross-linking reactant 3 is 1% to 6%.

[0130] In some embodiments, the quantum dots 1 are green light quantum dots 1 , and in the quantum dot luminescent material, the mass ratio of the green light quantum dots 1 to the cross-linking reactant 3 is 1% to 8%.

[0131] In some embodiments, the quantum dots 1 are blue light quantum dots 1 , and in the quantum dot luminescent material, the mass ratio of the blue light quantum dots 1 to the cross-linking reactant 3 is 1% to 8%.

[0132] The sizes of quantum dots 1 for emitting different colors are different, so that when the mass ratio of quantum dots 1 to cross-linked reactants 3 is the same, the quantum dot luminescent materials with quantum dots 1 of different colors show different film retention rates after development treatment. By setting the mass ratio of red light quantum dots 1 to cross-linked reactants 3 to 1% to 6%, the mass ratio of green light quantum dots 1 to cross-linked reactants 3 to 1% to 8%, and the mass ratio of blue light quantum dots 1 to cross-linked reactants 3 to 1% to 8%, the film retention rate of the quantum dot luminescent material located in the target area after development treatment can reach 100%.

[0133] A second aspect of the present application provides a method for preparing a display device, comprising the following steps:

[0134] S100, forming a first material layer on the first interface layer using the quantum dot light-emitting material provided in the first aspect;

[0135] S200, performing an exposure treatment on the first region so that the cross-linking reactant undergoes a photo-cross-linking reaction to connect at least two quantum dots, wherein the first material layer includes the first region and the second region;

[0136] S300, developing the first material layer to remove a portion of the first material layer located in the second region to obtain a patterned first quantum dot light-emitting layer.

[0137] The first interface layer may be a carrier transport layer. The first interface layer may also be a prepared patterned quantum dot light-emitting layer, and the color light emitted by the prepared quantum dot light-emitting layer may be different from the color light emitted by the first quantum dot light-emitting layer prepared in S300, so that when the two emit light together, superimposed color light can be obtained.

[0138] A mask with a preset pattern opening can be used, and the mask is set on one side of the first material layer. The first area is exposed through the mask using a light wave of a first wavelength. Under the action of the light wave of the first wavelength, the cross-linking reactants undergo a photo-cross-linking reaction, and the quantum dots located in the first area form a grid structure, so that the stability of the quantum dots located in the first area is higher than the stability of the quantum dots located in the second area.

[0139] The first material layer is developed using a developer that can dissolve the quantum dot luminescent material. The developer removes the portion of the first material layer located in the second area and retains the portion of the first material layer located in the first area, thereby obtaining a patterned first quantum dot luminescent layer consistent with the pattern of the preset graphic opening.

[0140] For example, see Figure 8 (a), forming a first material layer L2 on the first interface layer L1 with a quantum dot luminescent material; see Figure 8(b) using a mask 200 with a preset pattern opening to expose the first area A1; see Figure 8 (c) The first material layer L2 is developed to remove the portion of the first material layer L2 located in the second area A2, thereby obtaining a patterned first quantum dot light-emitting layer 10.

[0141] The embodiment of the present application forms a quantum dot light-emitting layer through a photolithography process, which can improve the uniformity of the morphology and thickness of the quantum dot light-emitting layer, improve the fineness of the patterned first quantum dot light-emitting layer, thereby improving the resolution of the display device prepared by the first quantum dot light-emitting layer and improving the performance of the display device. By adopting the quantum dot light-emitting material provided in the first aspect, the patterned quantum dot light-emitting layer can reduce or avoid the transfer of photogenerated carriers generated by the excitation of the quantum dot 1 to the cross-linking reactant 3 to a certain extent, reduce the decrease in the yield of photoluminescent quanta, and improve the luminescence performance of the quantum dot light-emitting layer.

[0142] In some embodiments, the method further comprises:

[0143] S400, forming a second material layer on the first interface layer using the quantum dot light-emitting material provided in the first aspect, wherein the second material layer includes quantum dots configured to emit second color light, and the first material layer includes quantum dots configured to emit first color light;

[0144] S500, performing an exposure treatment on the third region so that the cross-linking reactant undergoes a photo-cross-linking reaction to connect at least two quantum dots, and the second material layer includes the third region and the fourth region;

[0145] S600, developing the second material layer to remove the portion of the second material layer located in the fourth region to obtain a patterned second quantum dot light-emitting layer, and the first quantum dot light-emitting layer and the second quantum dot light-emitting layer are disposed on the first interface layer together.

[0146] The difference between S100 and S400 is that the quantum dot luminescent material used in S100 has quantum dots for emitting a first color of light, and the quantum dot luminescent material used in S400 has quantum dots for emitting a second color of light, so that the first quantum dot luminescent layer can be excited to emit the first color of light, and the second quantum dot luminescent layer can be excited to emit the second color of light. The patterned first quantum dot luminescent layer and the second quantum dot luminescent layer are both arranged on the first interface layer, and different patterns can be displayed by exciting different regions of the first quantum dot luminescent layer and the second quantum dot luminescent layer to emit light.

[0147] The third area in S500 may be all or part of the second area, that is, after the first material layer is developed, the first material layer located in the second area is removed, and after S500, a second material layer with a grid structure is formed in all or part of the second area. Referring to S400-S600, multiple quantum dot light-emitting layers are arranged on the first interface layer, and each quantum dot light-emitting layer can emit light of different colors under the action of the excitation light.

[0148] For example, see Fig. 9 (a), forming a second material layer L3 with quantum dot luminescent material on the portion of the first interface layer L2 corresponding to the second region; see Fig. 9 (b), using a mask 200 with a preset pattern opening to perform exposure processing on the third area A3; see Fig. 9 (c) Performing a development process on the second material layer L3 to remove the portion of the second material layer L3 located in the fourth area A4, thereby obtaining a patterned second quantum dot light-emitting layer 20.

[0149] The third aspect of the present application provides a quantum dot film, comprising a first quantum dot light-emitting layer prepared by the quantum dot patterning method of the second aspect and a second quantum dot light-emitting layer prepared by the quantum dot patterning method of the second aspect, the first quantum dot light-emitting layer being configured to emit a first color light, and the second quantum dot light-emitting layer being configured to emit a second color light.

[0150] The quantum film may further include a third quantum dot light emitting layer prepared by the quantum dot patterning method provided in the second aspect, the third quantum dot light emitting layer being configured to emit a third color light. The first color light, the second color light and the third color light may be selected from red light, green light and blue light, respectively.

[0151] See also Fig.10 In a fourth aspect, the present application provides a display device, comprising: a quantum dot film 100 as provided in the third aspect.

[0152] The display device includes the quantum dot film 100 of any of the above embodiments. Since the display device adopts all the technical solutions of all the above embodiments, it at least has all the beneficial effects brought by the technical solutions of the above embodiments, which will not be described one by one here.

[0153] The display device may be any device with a display function, for example, a mobile phone, a tablet computer, a laptop computer, a PDA, an in-vehicle electronic device, a wearable device, an ultra-mobile personal computer (UMPC), a netbook, or a personal digital assistant (PDA), etc. It may also be a non-mobile device such as a personal computer (PC), a television (TV), a teller machine, or an automated machine.

[0154] In some embodiments, the display device includes a bottom electrode 11, a first carrier transport layer 12, a second carrier transport layer 13 and a top electrode 14; the first carrier transport layer 12 is arranged on one side of the bottom electrode 11; the second carrier transport layer 13 is arranged on the side of the first carrier transport layer 12 away from the bottom electrode 11; the top electrode 14 is arranged on the side of the second carrier transport layer 13 away from the bottom electrode 11; the quantum dot film 100 is arranged between the first carrier transport layer 12 and the second carrier transport layer 13.

[0155] The display device may further include a substrate 15, and the bottom electrode 11 is disposed on the substrate 15. The substrate 15 may be a rigid glass or a flexible PI film (Polyimide Film).

[0156] The display device of the embodiment of the present application may be a display device of an upright quantum dot light-emitting diode, the bottom electrode 11 is an anode, the first carrier transport layer 12 is a hole transport layer, the second carrier transport layer 13 is an electron transport layer, and the top electrode 14 is a cathode. It should be noted that in other embodiments, the display device may also be a display device of an inverted quantum dot light-emitting diode, the bottom electrode 11 is a cathode, the first carrier transport layer 12 is an electron transport layer, the second carrier transport layer 13 is a hole transport layer, and the top electrode 14 is an anode.

[0157] When electrons and holes enter the quantum dot light-emitting layer through the electron transport layer and the hole transport layer respectively, the quantum dots will be excited by the exciton energy and emit light. In addition, due to the quantum confinement effect of quantum dots, the wavelength of light emitted by electron-hole recombination will vary with the size of the quantum dots, and quantum dots of different sizes will emit light of different colors. For example, the quantum dot light-emitting layer can include blue light quantum dots, green light quantum dots or red light quantum dots. The blue light quantum dots can be ZnCdS, ZnCdS / ZnS, ZnSe / ZnS, etc.; the green light quantum dots can be ZnCdSeS, ZnCdSeS / ZnS, etc.; the red light quantum dots can be CdSe / CdS, CdSe / ZnSe, ZnCdSeS / ZnS, etc.

[0158] The material of the anode can be a high work function metal and metal oxide, such as indium tin oxide, indium zinc oxide or single gold. The materials of the hole transport layer are Poly-TPD (polytriphenylamine), TFB (1,2,4,5-tetrakis (trifluoromethyl) benzene), PVK (polyvinyl carbazole), NPB (N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine), TAPC (4,4'-cyclohexylbis [N,N-di(4-methylphenyl) aniline]), TCTA (4,4',4"-tris (carbazole-9-yl) triphenylamine), mCP (2,6-diphenylamine), The material of the electron transport layer is ZnO, SnO2, ZnMgO, ZnAlO, ZnGaO or TiO2. The material of the cathode can be a low work function metal or its alloy, such as Al, Ag or Mg-Ag alloy.

[0159] The display device may further include a first carrier injection layer 16 disposed between the bottom electrode 11 and the first carrier transport layer 12 .

[0160] If the first carrier transport layer 12 is a hole transport layer, the first carrier injection layer 16 is a hole injection layer. The hole injection layer can increase the concentration of holes and improve the luminous efficiency. If the first carrier transport layer 12 is an electron transport layer, the first carrier injection layer 16 is an electron injection layer. The electron injection layer can increase the concentration of electrons and improve the luminous efficiency.

[0161] Optionally, the display device may further include a second carrier injection layer 17, which is disposed between the second carrier transport layer 13 and the top electrode 14. Taking the display device of the embodiment of the present application as a display device of a positive quantum dot light-emitting diode as an example, the first carrier injection layer 16 is a hole injection layer, the first carrier transport layer 12 is a hole transport layer, the second carrier transport layer 13 is an electron transport layer, and the second carrier injection layer 17 is an electron injection layer. The luminous efficiency of the display device can be further improved by the mutual cooperation of the hole transport layer, the hole injection layer, the electron transport layer and the electron injection layer.

[0162] The above are only specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed in the present application, and these modifications or replacements should be included in the protection scope of the present application. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A quantum dot luminescent material, characterized in that: The quantum dot luminescent material comprises: Multiple quantum dots; A plurality of ligands, wherein the ligands are connected to the quantum dots; A plurality of cross-linking reactants, wherein the cross-linking reactants are configured to undergo a cross-linking reaction to connect at least two of the quantum dots, and the cross-linking reactants are cross-linking molecules or cross-linking groups; The quantum dots and the cross-linking reactant satisfy at least one of the following: The lowest unoccupied molecular orbital (LUMO) energy level of the cross-linking reactant is outside the band gap of the quantum dot; The highest occupied molecular orbital (HOMO) energy level of the cross-linking reactant is outside the band gap of the quantum dot.

2. The quantum dot luminescent material according to claim 1, characterized in that: The valence band of the quantum dots is greater than the HOMO energy level of the cross-linking reactant, and the energy level difference between the valence band of the quantum dots and the HOMO energy level of the cross-linking reactant is greater than 0.2 eV.

3. The quantum dot luminescent material according to claim 1, characterized in that: The conduction band of the quantum dots is smaller than the LUMO energy level of the cross-linking reactant, and the energy level difference between the conduction band of the quantum dots and the LUMO energy level of the cross-linking reactant is greater than 0.2 eV.

4. The quantum dot luminescent material according to claim 1, characterized in that: The cross-linking reactant is a cross-linking molecule, the cross-linking molecule includes at least two photosensitive groups, and the photosensitive groups are configured to undergo a photo-cross-linking reaction with the active groups of the ligand; Preferably, the number of the photosensitive groups provided in one of the cross-linking reactants is n, 2≤n≤6; Preferably, the cross-linked molecule has a structure shown in the following formula (1): PRP(1), Where P is a photosensitive group; Preferably, R is an aromatic group, an aliphatic group or a heterocyclic group containing a benzene ring structure; Preferably, R comprises at least one halogen element; Preferably, R comprises at least one alkali metal element; Preferably, the cross-linked molecule has any one of the structures shown in the following formula (2), the structure shown in the following formula (3), the structure shown in the following formula (4), or the structure shown in the following formula (5):

5. The quantum dot luminescent material according to claim 1, characterized in that: The cross-linking reactant is a cross-linking group connected to the ligand, and the cross-linking group is configured to undergo a photo-cross-linking reaction with an active group of the ligand; Preferably, the plurality of ligands include a first ligand and a second ligand, one of the quantum dots is coordinated and connected to the first ligand and the second ligand respectively, the first ligand is connected to the cross-linking group, and the cross-linking group is configured to undergo a photo-cross-linking reaction with an active group of the second ligand; Preferably, the multiple quantum dots include a first quantum dot and a second quantum dot, the multiple ligands include a first ligand and a second ligand, the first quantum dot is coordinated and connected to the first ligand, the second quantum dot is coordinated and connected to the second ligand, the first ligand is connected to the cross-linking group, and the cross-linking group is configured to undergo a photo-cross-linking reaction with the second ligand.

6. The quantum dot luminescent material according to claim 1, characterized in that: The quantum dots are any of the following: red light quantum dots, green light quantum dots, blue light quantum dots; Preferably, in the quantum dot luminescent material, the mass ratio of the quantum dots to the cross-linking reactant is 1% to 10%; Preferably, the quantum dots are red light quantum dots, and in the quantum dot luminescent material, the mass ratio of the red light quantum dots to the cross-linking reactant is 1% to 6%; Preferably, the quantum dots are green light quantum dots, and in the quantum dot luminescent material, the mass ratio of the green light quantum dots to the cross-linking reactant is 1% to 8%; Preferably, the quantum dots are blue light quantum dots, and in the quantum dot luminescent material, the mass ratio of the blue light quantum dots to the cross-linking reactant is 1% to 8%.

7. A quantum dot patterning method, characterized in that: include: Forming a first material layer on the first interface layer using the quantum dot light-emitting material according to any one of claims 1 to 6; Expose the first region to cause the cross-linking reactant to undergo a photo-cross-linking reaction to connect at least two of the quantum dots, wherein the first material layer includes a first region and a second region; The first material layer is subjected to a development treatment to remove a portion of the first material layer located in the second region, thereby obtaining a patterned first quantum dot light-emitting layer.

8. The method according to claim 7, characterized in that The method further comprises: Forming a second material layer on the first interface layer using the quantum dot light-emitting material according to any one of claims 1 to 6, wherein the second material layer includes quantum dots configured to emit second color light, and the first material layer includes quantum dots configured to emit first color light; Expose the third region to cause the cross-linking reactant to undergo a photo-cross-linking reaction to connect at least two quantum dots, wherein the second material layer includes the third region and the fourth region; The second material layer is developed to remove the portion of the second material layer located in the fourth region to obtain a patterned second quantum dot light-emitting layer. The first quantum dot light-emitting layer and the second quantum dot light-emitting layer are disposed on the first interface layer.

9. A quantum dot film, characterized in that: The invention comprises a first quantum dot light-emitting layer and a second quantum dot light-emitting layer, wherein the first quantum dot light-emitting layer is configured to emit a first color light and adopts a quantum dot light-emitting material as claimed in any one of claims 1 to 6, and the first quantum dot light-emitting layer is configured to emit a second color light.

10. A display device, characterized in that: include: The quantum dot film as claimed in claim 9.

11. The display device according to claim 10, wherein: The light emitting device comprises: bottom electrode; A first carrier transport layer is disposed on one side of the bottom electrode; A second carrier transport layer is disposed on a side of the first carrier transport layer away from the bottom electrode; A top electrode, disposed on a side of the second carrier transport layer away from the bottom electrode; The quantum dot film is disposed between the first carrier transport layer and the second carrier transport layer.

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