Abnormality processing method and device for ion implanter and electronic equipment

Abstract

The invention provides an exception handling method and device for an ion implanter and electronic equipment, and relates to the technical field of semiconductor preparation. In the application, when it is determined that there is abnormal fluctuation in a voltage signal of ion implantation performed by an ion implanter for a target entity, a first control instruction used for indicating the ion implanter to stop emitting a beam is sent to the ion implanter. And when it is determined that the target entity is moved from the current position to the first position, a second control instruction used for indicating the ion implanter to re-emit the beam is sent to the ion implanter. And if the voltage signal returns to normal within the set time range, performing ion supplementary injection on the abnormal ion injection region of the target entity based on the ion injection information corresponding to the abnormal fluctuation. In this way, the problem that the implantation stability of the ion implanter is poor due to abnormal fluctuation of the voltage is solved, and therefore the implantation stability of the ion implanter is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to an abnormality handling method, device and electronic equipment for an ion implanter. Background Art

[0002] In the field of semiconductor ion implantation, as the complexity of process manufacturing increases, higher requirements are placed on the implantation stability of ion implanters. Among them, the change in beam size due to instantaneous voltage changes (also known as glitch changes) will cause discontinuity in the ion implantation process, and then cause the performance of some process products to fail. Therefore, glitch changes will have a certain impact on the implantation stability of ion implanters.

[0003] In view of this, how to effectively solve the problem of poor injection stability of ion implanters caused by abnormal voltage fluctuations (such as glitch changes) is a problem that needs to be solved urgently. Summary of the invention

[0004] The embodiments of the present application provide an abnormality handling method, device and electronic device for an ion implanter, which are used to solve the problem of poor injection stability of the ion implanter caused by abnormal voltage fluctuations (such as glitch changes), thereby improving the injection stability of the ion implanter.

[0005] In a first aspect, an embodiment of the present application provides an abnormality handling method for an ion implanter, the method comprising:

[0006] Acquire a voltage signal of an ion implanter for ion implantation into a target entity, and send a first control instruction to the ion implanter when the voltage signal has abnormal fluctuations; wherein the voltage signal is used to characterize the size of the beam emitted by the ion implanter, and the first control instruction is used to instruct the ion implanter to stop emitting the beam;

[0007] When it is determined that the target entity is to be moved from the current position to the first position, a second control instruction is sent to the ion implanter; wherein the first position is an end point position of the target entity during the ion implantation movement, and the second control instruction is used to instruct the ion implanter to re-emit the beam;

[0008] If the voltage signal returns to normal within a set time range, ion injection is performed on the abnormal ion injection area of ​​the target entity based on the ion injection information corresponding to the abnormal fluctuation.

[0009] In an optional embodiment, obtaining a voltage signal of an ion implanter for ion implantation on a target entity includes:

[0010] Acquire an analog signal when the ion implanter performs ion implantation on a target entity, and perform analog-to-digital conversion on the analog signal to obtain a corresponding digital signal;

[0011] The digital signal is filtered to obtain a voltage signal.

[0012] In an optional embodiment, the abnormal fluctuation is that the voltage fluctuation amplitude in the voltage signal is less than or equal to a set fluctuation amplitude threshold, and / or the abnormal fluctuation time is greater than or equal to a set time threshold.

[0013] In an optional embodiment, ion injection is performed on the abnormal ion injection area of ​​the target entity based on the ion injection information corresponding to the abnormal fluctuation, including:

[0014] If it is determined based on the ion implantation information that the abnormal fluctuation occurs during the movement of the target entity along the first direction, the target entity is moved from the first position to the second position; wherein the first direction is the direction from the first position to the second position, and the second position is another end point position of the target entity during the ion implantation movement;

[0015] The target entity is moved along a second direction until the abnormal ion implantation area is completed; wherein the second direction is a direction from the second position to the first position.

[0016] In an optional embodiment, before moving the target entity from the first position to the second position, the method further includes:

[0017] A third control instruction is sent to the ion implanter; the third control instruction is used to instruct the ion implanter to turn off the beam;

[0018] After moving the target entity from the first position to the second position, the target entity is moved along the second direction until the abnormal ion implantation area is completed, and before the abnormal ion implantation area is completed, the method further includes:

[0019] A fourth control instruction is sent to the ion implanter; the fourth control instruction is used to instruct the ion implanter to turn on the beam.

[0020] In an optional embodiment, ion injection is performed on the abnormal ion injection area of ​​the target entity based on the ion injection information corresponding to the abnormal fluctuation, including:

[0021] If it is determined based on the ion implantation information that the abnormal fluctuation occurs during the movement of the target entity along the second direction, the target entity is moved along the first direction until the abnormal ion implantation area is filled;

[0022] The second direction is the direction from the second position to the first position, the first direction is the direction from the first position to the second position, and the second position is another end point position of the target entity during the ion implantation movement process.

[0023] In an optional embodiment, after sending the second control instruction to the ion implanter, the method further includes:

[0024] If the voltage signal does not return to normal within the set time range, the target entity is removed and a prompt message is sent to the target object; the indication message is used to remind the target object to perform ion replenishment on the target entity.

[0025] In a second aspect, an embodiment of the present application further provides an abnormality handling device for an ion implanter, the device comprising:

[0026] A signal acquisition module, used to acquire a voltage signal of the ion implanter for ion implantation into a target entity, and to send a first control instruction to the ion implanter when the voltage signal has an abnormal fluctuation; wherein the voltage signal is used to characterize the size of the beam emitted by the ion implanter, and the first control instruction is used to instruct the ion implanter to stop emitting the beam;

[0027] A position determination module, used for sending a second control instruction to the ion implanter when it is determined that the target entity is moved from the current position to the first position; wherein the first position is an end position of the target entity during the ion implantation process, and the second control instruction is used for instructing the ion implanter to re-emit the beam;

[0028] The ion implantation module is used to perform ion implantation on the abnormal ion implantation area of ​​the target entity based on the ion implantation information corresponding to the abnormal fluctuation if the voltage signal returns to normal within a set time range.

[0029] In an optional embodiment, when acquiring a voltage signal of an ion implanter for ion implantation of a target entity, the signal acquisition module is specifically used to:

[0030] Acquire an analog signal when the ion implanter performs ion implantation on a target entity, and perform analog-to-digital conversion on the analog signal to obtain a corresponding digital signal;

[0031] The digital signal is filtered to obtain a voltage signal.

[0032] In an optional embodiment, when performing ion supplementation on the abnormal ion implantation area of ​​the target entity based on the ion implantation information corresponding to the abnormal fluctuation, the ion implantation module is specifically used to:

[0033] If it is determined based on the ion implantation information that the abnormal fluctuation occurs during the movement of the target entity along the first direction, the target entity is moved from the first position to the second position; wherein the first direction is the direction from the first position to the second position, and the second position is another end point position of the target entity during the ion implantation movement;

[0034] The target entity is moved along a second direction until the abnormal ion implantation area is completed; wherein the second direction is a direction from the second position to the first position.

[0035] In an optional embodiment, before moving the target entity from the first position to the second position, the ion implantation module is further configured to:

[0036] A third control instruction is sent to the ion implanter; the third control instruction is used to instruct the ion implanter to turn off the beam;

[0037] After moving the target entity from the first position to the second position, and before moving the target entity along the second direction until the abnormal ion implantation area is completed, the ion implantation module is further used to:

[0038] A fourth control instruction is sent to the ion implanter; the fourth control instruction is used to instruct the ion implanter to turn on the beam.

[0039] In an optional embodiment, when performing ion supplementation on the abnormal ion implantation area of ​​the target entity based on the ion implantation information corresponding to the abnormal fluctuation, the ion implantation module is specifically used to:

[0040] If it is determined based on the ion implantation information that the abnormal fluctuation occurs during the movement of the target entity along the second direction, the target entity is moved along the first direction until the abnormal ion implantation area is filled;

[0041] The second direction is the direction from the second position to the first position, the first direction is the direction from the first position to the second position, and the second position is another end point position of the target entity during the ion implantation movement process.

[0042] In an optional embodiment, after sending the second control instruction to the ion implanter, the ion implantation module is further used to:

[0043] If the voltage signal does not return to normal within the set time range, the target entity is removed and a prompt message is sent to the target object; the indication message is used to remind the target object to perform ion replenishment on the target entity.

[0044] In a third aspect, an embodiment of the present application further provides an electronic device, including:

[0045] Processor; and

[0046] Memory for storing programs,

[0047] The program includes instructions, and when the instructions are executed by the processor, the processor executes the abnormality handling method of the ion implanter as described in the first aspect.

[0048] In a fourth aspect, an embodiment of the present application further provides a non-transitory computer-readable storage medium storing computer instructions, wherein the computer instructions are used to enable a computer to execute the exception handling method for the ion implanter as described in the first aspect.

[0049] In a fifth aspect, the present application provides a computer program product, which, when called by a computer, enables the computer to execute the steps of the ion implanter exception handling method as described in the first aspect.

[0050] The beneficial effects of this application are as follows:

[0051] In the abnormality handling method of the ion implanter provided in the embodiment of the present application, when ion implantation is performed on the target entity, the voltage signal of the ion implanter is detected in real time. Once an abnormal fluctuation is found in the voltage signal, a first control instruction to stop emitting the beam is sent to the ion implanter, and when the target entity is moved from the current position to the first position, a second control instruction to re-emit the beam is sent to the ion implanter. In this way, when it is determined that the voltage signal or the beam returns to normal within the set time range, the abnormal ion implantation area of ​​the target entity can be supplemented with ions based on the ion implantation information corresponding to the abnormal fluctuation, thereby solving the problem of poor injection stability of the ion implanter caused by abnormal fluctuations (for example, glitch changes), thereby improving the injection stability of the ion implanter.

[0052] In addition, other features and advantages of the present application will be described in the subsequent description, and partly become apparent from the description, or be understood by practicing the present application. The purpose and other advantages of the present application can be realized and obtained by the structures particularly pointed out in the written description, claims, and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described here are used to provide a further understanding of the present application, constitute a part of the present application, and do not constitute an improper limitation on the present application. In the drawings:

[0054] Figure 1 A specific schematic diagram of a glitch change provided in an embodiment of the present application;

[0055] Figure 2 A schematic diagram of ion implantation of a wafer provided in an embodiment of the present application;

[0056] Figure 3 A schematic diagram of an optional control system architecture provided in an embodiment of the present application;

[0057] Figure 4 A schematic diagram of an implementation flow of an abnormality handling method for an ion implanter provided in an embodiment of the present application;

[0058] Figure 5 A logic diagram for detecting abnormal fluctuations in a voltage signal provided in an embodiment of the present application;

[0059] Figure 6 A schematic diagram of a scene of target entity movement provided in an embodiment of the present application;

[0060] Figure 7 A logical schematic diagram of ion injection into a target entity provided in an embodiment of the present application;

[0061] Figure 8 A schematic diagram of a method for implementing an abnormality handling method for ion implantation of a target entity provided in an embodiment of the present application;

[0062] Fig. 9 A schematic diagram of the structure of an abnormality handling device for an ion implanter provided in an embodiment of the present application;

[0063] Fig.10 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0064] The embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although certain embodiments of the present application are shown in the accompanying drawings, it should be understood that the present application can be implemented in various forms and should not be construed as being limited to the embodiments described herein. Instead, these embodiments are provided to provide a more thorough and complete understanding of the present application. It should be understood that the drawings and embodiments of the present application are only for exemplary purposes and are not intended to limit the scope of protection of the present application.

[0065] It should be understood that the various steps described in the method implementation of the present application can be performed in different orders and / or performed in parallel. In addition, the method implementation may include additional steps and / or omit the steps shown. The scope of the present application is not limited in this respect.

[0066] The term "including" and its variations used in this document are open inclusions, that is, "including but not limited to". The term "based on" means "based at least in part on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one other embodiment"; the term "some embodiments" means "at least some embodiments". Relevant definitions of other terms will be given in the description below. It should be noted that the concepts of "first", "second", etc. mentioned in this application are only used to distinguish different devices, modules or units, and are not used to limit the order or interdependence of the functions performed by these devices, modules or units.

[0067] It should be noted that the modifications of "one" and "plurality" mentioned in the present application are illustrative rather than restrictive, and those skilled in the art should understand that unless otherwise clearly indicated in the context, it should be understood as "one or more".

[0068] The names of the messages or information exchanged between multiple devices in the embodiments of the present application are only used for illustrative purposes and are not used to limit the scope of these messages or information.

[0069] Some of the terms used in the embodiments of the present application are explained below to facilitate understanding by those skilled in the art.

[0070] (1) Wafer: refers to the silicon wafer used to make silicon semiconductor circuits. The raw material is silicon. High-purity polycrystalline silicon is dissolved and mixed with silicon crystal seeds, and then slowly pulled out to form cylindrical single crystal silicon. After grinding, polishing and slicing, the silicon crystal rod is formed into a silicon wafer, also known as a wafer. Domestic wafer production lines are mainly 8-inch and 12-inch.

[0071] (2) Programmable logic controller (PLC): a digital computing and operating electronic system designed specifically for use in industrial environments. It is a digital computing controller with a microprocessor for automated control that can load control instructions into memory at any time for storage and execution.

[0072] (3) Ethernet for control automation technology (EtherCAT): It is a high-performance real-time Ethernet communication protocol that can achieve extremely low communication latency and high-bandwidth data transmission, thus meeting the needs of high-speed control and data acquisition.

[0073] Based on the above-mentioned nouns and related terminology explanations, the design concept of the embodiments of the present application is briefly introduced below:

[0074] In the field of semiconductor ion implantation, as the complexity of process manufacturing increases, higher requirements are placed on the working stability of ion implanters. The implantation stability during ion implantation is related to many factors. Among them, instantaneous fluctuations or changes in voltage will cause changes in ion energy, thereby affecting the beam size (that is, the beam will change significantly).

[0075] The instantaneous fluctuation or change of the voltage is also called glitch change (or sparking phenomenon). This glitch change will cause the ion implantation process to be discontinuous, and then cause the performance of some process products to fail. For example, see Figure 1 As shown, it is a specific schematic diagram of a glitch change provided in an embodiment of the present application. Figure 1 In the figure, a glitch change occurs between 27.008ms and 47.264ms. That is, the high voltage power supply will drop suddenly during the ion implantation process, and the whole process lasts for more than ten milliseconds. Optionally, different types of glitch changes can be divided according to the amplitude and duration of voltage fluctuation.

[0076] Taking wafer ion implantation as an example, if no action is taken for the glitch changes that occur, refer to Figure 2 As shown in the figure, an implantation notch will appear on the wafer, which seriously affects the uniformity of ion implantation and the accuracy of implantation dose. For glitch changes with large voltage fluctuations and long duration or unrecoverable, the wafer after ion implantation cannot meet the process requirements.

[0077] It should be understood that the implantation notch on the wafer is also an abnormal ion implantation area on the wafer, where the ion implantation quality is poor or the implanted ion dose is insufficient.

[0078] In view of this, in order to effectively solve the problem of poor injection stability of the ion implanter caused by abnormal voltage fluctuations (such as glitch changes), the embodiment of the present application proposes an abnormal handling method for the ion implanter, which may specifically include: obtaining a voltage signal for the ion implanter to perform ion implantation on the target entity, and sending a first control instruction to the ion implanter when there is an abnormal fluctuation in the voltage signal; wherein the voltage signal can be used to characterize the size of the beam emitted by the ion implanter, and the first control instruction is used to instruct the ion implanter to stop emitting the beam; when it is determined to move the target entity from the current position to the first position, sending a second control instruction to the ion implanter; wherein the first position can be an end point position of the target entity during the ion implantation movement process, and the second control instruction can be used to instruct the ion implanter to re-emit the beam; if the voltage signal returns to normal within a set time range, ion injection is performed on the abnormal ion implantation area of ​​the target entity based on the ion injection information corresponding to the abnormal fluctuation. In this way, by performing ion injection (i.e., backfilling, filling or supplementary injection) on the abnormal ion implantation area, the injection stability of the ion implanter is improved.

[0079] In particular, the preferred embodiments of the present application are described below in conjunction with the drawings in the specification. It should be understood that the preferred embodiments described herein are only used to illustrate and explain the present application, and are not used to limit the present application, and the embodiments of the present application and the features in the embodiments may be combined with each other if there is no conflict.

[0080] See also Figure 3 As shown, it is a schematic diagram of an optional control system architecture applicable to the embodiment of the present application, and the control system architecture may include: a host computer 301, a controller 302, a signal acquisition module 303 and a motion control module 304. The controller 302 can exchange information with the host computer 301, the signal acquisition module 303 and the motion control module 304 through a communication network. Among them, the communication mode adopted by the communication network may include: a wireless communication mode and a wired communication mode.

[0081] Exemplarily, the controller 302 can access the network through cellular mobile communication technology to communicate with the host computer 301, the signal acquisition module 303 and the motion control module 304. The cellular mobile communication technology, for example, includes the fifth generation mobile communication (5th generation mobile networks, 5G) technology or the next generation mobile communication technology.

[0082] Optionally, the controller 302 can access the network through short-range wireless communication to communicate with the host computer 301, the signal acquisition module 303 and the motion control module 304. The short-range wireless communication method, for example, includes wireless fidelity (Wi-Fi) technology.

[0083] In an optional implementation, Figure 3 As shown, the signal acquisition module 303 and the motion control module 304 can be integrated in the controller 302 through a real-time industrial bus (e.g., EtherCAT). The communication medium can be optical fiber to reduce interference with the ion implantation field equipment. Moreover, the abnormality detection (i.e., the signal acquisition module 303) and the dose control (motion control module 304) during the ion implantation process are integrated in a controller 302 for control, which can reduce the interaction time between different modules, thereby ensuring the timely response of the entire control system.

[0084] The embodiment of the present application does not impose any restrictions on the number of communication devices or communication modules involved in the above system architecture. For example, the above application scenario may include more host computers, or may not include a host computer, or may also include other network devices. Figure 3 As shown, only the host computer 301, the controller 302, the signal acquisition module 303 and the motion control module 304 are described as examples, and the above-mentioned communication devices or communication modules and their respective functions are briefly introduced below.

[0085] The host computer 301 refers to a computer that can directly issue control instructions, and generally can provide a user operation interactive interface and display feedback data to the user. Exemplarily, the host computer 301 may include, but is not limited to: a mobile phone, a tablet computer, a laptop computer, a PDA, a mobile internet device (MID), a wearable device, a virtual reality (VR) device, an augmented reality (AR) device, a wireless terminal device in industrial control, a wireless terminal device in unmanned driving, a wireless terminal device in a smart grid, a wireless terminal device in transportation safety, a wireless terminal device in a smart city, or a wireless terminal device in a smart home, etc.

[0086] The upper computer 301 can usually send control instructions to the lower computer. After receiving the control command, the lower computer performs the corresponding action and feeds back the obtained result to the upper computer. Conceptually, the controller and the service provider are the upper computer 301, and the controlled and the served are the lower computers, which can also be understood as the relationship between the host and the slave. It should be noted that the upper computer 301 and the lower computer are relative, and the upper computer 301 and the lower computer can be converted.

[0087] For example, in the embodiment of the present application, the controller 302 may be a slave of the host computer 301, that is, the host computer 301 may send scheduling information related to the ion implanter performing ion implantation on the target entity to the controller 302. The aforementioned scheduling information may include parameters such as the beam size emitted by the ion implanter.

[0088] The controller 302 can receive the scheduling information sent by the host computer 301, and determine the first position and the second position of the target entity movement (i.e., the two end positions of the target entity movement), the ion injection speed, and the number of ion injections (or ion pass number) according to the multiple parameters included in the scheduling information. In this way, after obtaining the aforementioned multiple parameters, the controller 302 can execute the subsequent abnormality handling method of the ion implanter.

[0089] Optionally, the controller 302 can be used to obtain a voltage signal for the ion implanter to perform ion implantation on the target entity, and send a first control instruction to the ion implanter when there is an abnormal fluctuation in the voltage signal. The voltage signal can be used to characterize the size of the beam emitted by the ion implanter, and the first control instruction can be used to instruct the ion implanter to stop emitting the beam. Then, when it is determined to move the target entity from the current position to the first position, a second control instruction is sent to the ion implanter. The first position is an end point position of the target entity during the ion implantation movement process, and the second control instruction can be used to instruct the ion implanter to re-emit the beam. Finally, if the voltage signal returns to normal within a set time range, ion injection is performed on the abnormal ion implantation area of ​​the target entity based on the ion injection information corresponding to the abnormal fluctuation.

[0090] The signal acquisition module 303 is mainly used to collect the voltage signal of the ion implanter when performing ion implantation on the target entity in real time, and send the collected voltage signal to the controller 302 in a timely manner. Exemplarily, the signal acquisition module 303 can realize real-time input / output (I / O) acquisition for the voltage signal of the ion implanter.

[0091] The motion control module 304 is used to receive the motion control instruction for the target entity determined by the controller 302 according to the voltage signal of the ion implanter, and control the movement of the target entity according to the aforementioned motion control instruction.

[0092] It should be noted that, when the beam size emitted by the ion implanter remains unchanged, the process of ion implantation of the target entity is completed by controlling the movement of the target entity. Exemplarily, the ion implantation process of the target entity (e.g., wafer) can be completed by the reciprocating motion of the air bearing in the motion control module 304. In addition, it should be understood that in the embodiments of the present application, there is no limitation on the specific types of the above-mentioned devices or modules.

[0093] The following describes the abnormality handling method of the ion implanter provided by the exemplary embodiment of the present application in combination with the above-mentioned system architecture and reference to the accompanying drawings. It should be noted that the above-mentioned system architecture is only shown to facilitate understanding of the spirit and principles of the present application, and the implementation of the present application is not limited in this regard.

[0094] See also Figure 4 As shown, it is a schematic diagram of the implementation process of an abnormality handling method of an ion implanter provided in an embodiment of the present application. The execution subject takes the controller as an example. The specific implementation process of the method is as follows:

[0095] S401: Acquire a voltage signal of an ion implanter for ion implantation into a target entity, and send a first control instruction to the ion implanter when the voltage signal has abnormal fluctuations.

[0096] The target entity mentioned above can be any entity that needs ion implantation, for example, the target entity can be a semiconductor silicon chip (such as a wafer), etc. The voltage signal mentioned above can be used to characterize the size of the beam emitted by the ion implanter. Generally, the larger the voltage amplitude of the voltage signal, the larger the beam emitted by the ion implanter; conversely, the smaller the voltage amplitude of the voltage signal, the smaller the beam emitted by the ion implanter. In addition, the voltage signal of the ion implanter when performing ion implantation on the target entity is usually a stabilized voltage signal, such as Figure 1 As shown, the voltage signal when performing ion implantation on the target entity may be a voltage signal of 26000 V. The above-mentioned first control instruction may be used to instruct the ion implanter to stop emitting a beam.

[0097] In an optional implementation, when executing step S401, the controller can obtain an analog signal when the ion implanter performs ion implantation on the target entity, and perform analog-to-digital conversion on the analog signal to obtain a corresponding digital signal, thereby filtering the digital signal to obtain a voltage signal. In this way, by performing analog-to-digital conversion on the collected analog signal to obtain a digital signal, and performing digital filtering on the obtained digital signal, interference is prevented from causing the controller to misjudge the obtained voltage signal, that is, the accuracy of subsequent judgment of whether there is abnormal fluctuation in the voltage signal is improved.

[0098] In order to timely discover whether there is abnormal fluctuation in the voltage signal of the ion implanter for ion implantation to the target entity, so as to improve the abnormal processing efficiency of the ion implanter. The controller can obtain the voltage signal of the ion implanter for ion implantation to the target entity in real time. For example, the controller can collect the voltage signal of the ion implanter in real time during the time when the ion implanter implants ions to the target entity through the signal acquisition module, so as to judge in real time whether there is abnormal fluctuation in the voltage signal when the ion implanter implants ions to the target entity.

[0099] Furthermore, after obtaining the voltage signal of the ion implanter for ion implantation into the target entity, the controller can determine whether the voltage signal has abnormal fluctuations according to the preset abnormal fluctuation discrimination conditions. Since the ion implanter usually uses a high-voltage power supply when implanting ions into the target entity, the above-mentioned abnormal fluctuation is a situation where the high-voltage voltage drops suddenly. Therefore, in an optional implementation, the above-mentioned preset abnormal fluctuation discrimination conditions can be: the voltage fluctuation amplitude in the voltage signal is less than or equal to the set fluctuation amplitude threshold, and / or the abnormal fluctuation time is greater than or equal to the set time threshold. That is, if the voltage fluctuation amplitude in the voltage signal is less than or equal to the set fluctuation amplitude threshold, and / or the abnormal fluctuation time is greater than or equal to the set time threshold, it can be determined that the voltage signal has abnormal fluctuations, and then it is necessary to perform subsequent abnormal processing for the ion implanter (or abnormal fluctuation).

[0100] For example, assuming that the normal voltage of the voltage signal is 25000V, and the voltage fluctuation amplitude in the voltage signal is 15000V, and the set fluctuation amplitude threshold is 20000V, it can be determined that the voltage fluctuation amplitude of 15000V is less than the set fluctuation amplitude threshold of 20000V, and it can be determined that there is abnormal fluctuation in the voltage signal. For another example, assuming that the abnormal fluctuation time is 19.25ms, and the set time threshold is 15ms, it can be determined that the abnormal fluctuation time 19.25ms is greater than the set time threshold of 15ms, and it can be determined that there is abnormal fluctuation in the voltage signal.

[0101] For another example, it is still assumed that the normal voltage of the voltage signal is 25000V, and the voltage fluctuation amplitude in the voltage signal is 15000V, the set fluctuation amplitude threshold is 20000V, the abnormal fluctuation time is 19.25ms, and the set time threshold is 15ms. It can be seen that the voltage fluctuation amplitude of 15000V is less than the set fluctuation amplitude threshold of 20000V, and the abnormal fluctuation time of 19.25ms is greater than the set time threshold of 15ms, so it can be determined that there is abnormal fluctuation in the voltage signal.

[0102] Based on the above method, the controller, signal acquisition module and motion control module work in coordination and can respond to abnormal ion injection situations in milliseconds, thereby quickly shutting down the beam.

[0103] It should be noted that in the embodiments of the present application, the method for determining whether there is abnormal fluctuation in the voltage signal is not specifically limited. For example, the voltage mean value during the time when the voltage fluctuates can be compared with a set mean value threshold value to determine whether there is abnormal fluctuation in the voltage signal. That is, the monitoring conditions can be flexibly configured according to actual conditions.

[0104] In addition, if Figure 1 As shown in the figure, the glitch of the power supply is a very short process. When judging the program, it is usually considered that a glitch occurs when the detection variable drops to a certain degree within a certain period of time. The judgment condition can be configured according to the specific situation, which is very flexible. In addition, the controller can also detect the fluctuation of all electrical signals of the device at the same time to reduce the possibility of false alarms and missed alarms. When a glitch is detected, the controller will enter the exception handling process.

[0105] See also Figure 5 As shown, after the controller turns on the abnormal fluctuation detection function for the voltage signal of the ion implanter, it can collect the analog signal of the ion implanter in real time, and after the analog signal is converted into a mode, filter the obtained digital signal, so as to determine whether an abnormal fluctuation (i.e., glitch) occurs based on the obtained voltage signal (i.e., the digital signal after filtering). Once an abnormal fluctuation of the voltage signal is found, subsequent abnormal processing is performed. On the contrary, if no abnormal fluctuation of the voltage signal is found, the abnormal fluctuation detection is stopped after the ion implantation of the target entity is completed.

[0106] In order to reduce the power consumption of the ion implanter and reduce the consumption of ions, the controller can send a first control instruction to the ion implanter to instruct the ion implanter to stop emitting a beam when determining that the voltage signal has abnormal fluctuations. Optionally, the aforementioned first control instruction can also be called a beam interruption instruction of the ion implanter. Of course, the aforementioned first control instruction can also have other names, which are not specifically limited in the embodiments of the present application.

[0107] S402: When it is determined to move the target entity from the current position to the first position, a second control instruction is sent to the ion implanter.

[0108] The first position mentioned above can be an end point position of the target entity during the ion implantation process. Figure 6As shown, the first position can be the ion implantation low position of the target entity in the vertical direction, that is, the lowest end that the beam can reach on the plane where the target entity is located. Here, the top of the target entity is adjacent to the lowest end that the ions in the beam can reach on the plane where the target entity is located.

[0109] Among them, Figure 6 As shown in FIG. 1 , the emission range corresponding to the broadband beam can characterize the size of the beam emitted by the ion implanter. In addition, since the general beam may be divergent, such as a ribbon beam ion flow, the range when the beam reaches the plane where the target entity is located is usually larger than the emission range corresponding to the aforementioned broadband beam, that is, there is an overscan area.

[0110] The second control instruction can be used to instruct the ion implanter to re-emit the beam. In this way, after receiving the second control instruction from the controller, the ion implanter can re-emit or turn on the beam, thereby determining whether the beam emitted by the ion implanter has recovered from an abnormal state to a normal state, that is, determining whether the voltage signal of the ion implanter for ion implantation of the target entity has recovered from an abnormal fluctuation to a stable state.

[0111] Specifically, when executing step S402, after the controller determines that the ion implanter receives the first control instruction and stops emitting the beam based on the first control instruction, it can move the target entity from the current position to the first position through the motion control module. Then, when the controller determines that the target entity has moved to the first position, it can send a second control instruction to the ion implanter to instruct the ion implanter to re-emit the beam. Finally, the beam or voltage signal is collected in real time through the signal acquisition module to determine whether the voltage signal or beam has returned to a normal state.

[0112] S403: If the voltage signal returns to normal within a set time range, ion injection is performed on the abnormal ion injection area of ​​the target entity based on the ion injection information corresponding to the abnormal fluctuation.

[0113] The above voltage signal returns to normal within the set time range, that is, the beam emitted by the ion implanter returns to normal within the set time range. In order to respond promptly to problems caused by abnormal fluctuations, the above set time range is usually a shorter time range, for example, within 5S. The embodiment of the present application does not limit the specific value of the set time range.

[0114] The ion injection information corresponding to the abnormal fluctuation is the relevant information of the controller for ion injection into the target entity when the controller detects abnormal fluctuation of the voltage signal. Exemplary information may include but is not limited to: the location of the target entity (or the abnormal ion injection area of ​​the target entity) when the voltage signal fluctuates abnormally, the ion injection direction (such as Figure 6As shown, the ion implantation direction may be: ion implantation low position → ion implantation high position, or ion implantation high position → ion implantation low position) and parameters such as the number of ion implantations (ie, the number of ion passes).

[0115] The above-mentioned number of ion implantation times (i.e., the number of ion passes) refers to the number of round trips of the target entity in the ion implantation region under the guidance or control of the motion control module. Figure 6 As shown, during one ion implantation process, the target entity is transported from the ion implantation low position to the ion implantation high position, and then from the ion implantation high position back to the ion implantation low position.

[0116] Therefore, when executing step S403, if the voltage signal returns to normal within the set time range or the beam current returns to normal within the set time range, the controller can perform ion supplementation on the abnormal ion implantation area of ​​the target entity based on the ion implantation information corresponding to the abnormal fluctuation, thereby improving the uniformity of the ions implanted into the target entity.

[0117] In an optional implementation, if it is determined based on the ion implantation information that the abnormal fluctuation occurs during the movement of the target entity along the first direction, the target entity can be moved from the first position to the second position, and the target entity can be moved along the second direction until the abnormal ion implantation area is completed. The first direction is the direction from the first position to the second position, the second position is the other end position of the target entity during the ion implantation movement, and the second direction is the direction from the second position to the first position, that is, the first direction is opposite to the second direction.

[0118] It can be seen that when the ion implanter performs refilling on the abnormal ion implantation area of ​​the target entity, the movement direction of the target entity is opposite to the movement direction of the target entity when the voltage signal fluctuates abnormally, so that the ion refilling of the target entity can be better achieved. It should be understood that the refilling of the abnormal ion implantation area of ​​the target entity means that when the target entity is transported to the position where the abnormal fluctuation occurs, the beam emitted by the ion implanter performs ion refilling on the target entity.

[0119] like Figure 6As shown, the first position can be the ion injection low position of the target entity in the vertical direction, then the second position can be the ion injection high position of the target entity in the vertical direction, the first direction is ion injection low position→ion injection high position (i.e. upward), and the second direction is ion injection high position→ion injection low position (i.e. downward). If the glitch change (i.e. abnormal fluctuation) occurs during the movement of the target entity along the first direction, then the controller can first move the target entity from the ion injection low position to the ion injection high position through the air bearing in the motion control module, thereby moving the target entity along the second direction until the abnormal ion injection area of ​​the target entity is filled.

[0120] Optionally, in order to reduce the consumption of ions and the power consumption caused by the ion implanter working all the time, the controller can send a third control instruction to the ion implanter to instruct the ion implanter to turn off the beam before moving the target entity from the first position to the second position. Therefore, after the controller determines that the target entity has been moved from the first position to the second position, and before moving the target entity along the second direction until the abnormal ion implantation area is filled, a fourth control instruction can be sent to the ion implanter to instruct the ion implanter to turn on the beam. In this way, flexible control of the opening and closing of the beam emitted by the ion implanter can be achieved according to the actual needs of the beam.

[0121] In an optional implementation, if it is determined based on the ion implantation information that the abnormal fluctuation occurs during the movement of the target entity along the second direction, the target entity may be moved along the first direction until the abnormal ion implantation area is filled. Figure 6 As shown, if a glitch change (i.e., abnormal fluctuation) occurs during the movement of the target entity along the second direction, the controller can drive the target entity to move along the first direction through the air bearing in the motion control module until the abnormal ion implantation area of ​​the target entity is completed.

[0122] Based on the two situations of abnormal fluctuations mentioned above, refer to Figure 7 As shown, when the controller determines that the voltage signal has abnormal fluctuations, it can use the ion replenishment method set for the movement direction according to the movement direction of the target entity when the abnormal fluctuation occurs (i.e., the first direction or the second direction) to replenish ions to the target entity. If the movement direction of the target entity when the voltage signal is abnormal is the first direction, the beam can be turned off first; then, after the target entity moves to the ion injection high position, the beam can be turned on to move to the ion injection low position; finally, when the target entity moves to the beam shut-off position corresponding to the first control instruction, the beam is turned off again and moves to the ion injection low position, thereby completing the ion replenishment process.

[0123] If the movement direction of the target entity when the voltage signal becomes abnormal is in the second direction, the beam can be maintained (i.e., the beam is not turned off) after the ion implanter is instructed to re-emit the beam according to the second control instruction; then, the target entity is driven to move in the first direction through the motion control module; finally, when the target entity moves to the beam-off position corresponding to the first control instruction, the beam is turned off again and moves to the ion implantation low position, thereby completing the ion replenishment process.

[0124] It should be noted that the beam shutoff position corresponding to the first control instruction is also the position of the target entity when the controller finds abnormal fluctuations in the voltage signal. In addition, in the embodiment of the present application, the number of ion injections to the target entity is not unlimited. Generally speaking, ion injections cannot be continued after two times.

[0125] In an optional implementation, after executing step S402, if the voltage signal does not return to normal within a set time range, the target entity can be removed and a prompt message can be sent to the target object. The aforementioned indication information can be used to remind the target object to perform ion replenishment on the target entity. In this way, when the voltage signal or beam current is not restored in time, ion replenishment can still be performed on the target entity with ion injection abnormality, so as to improve the efficiency of abnormality handling.

[0126] For example, if the beam emitted by the ion implanter is not restored, a stripping process may be adopted to remove the target entity and then perform ion replenishment on the target entity, that is, replenish the target entity with the remaining ion dose through Topoff.

[0127] Therefore, based on the abnormality handling method of the ion implanter described above, refer to Figure 8 As shown, when the controller determines that the voltage signal has abnormal fluctuations, the controller can implement abnormal processing of ion implantation of the target entity in the following manner:

[0128] S801: Start, that is, start the exception handling process.

[0129] S802: Instruct the ion implanter to turn off the beam.

[0130] For example, when executing step S802, the controller may send a first control instruction to the ion implanter for instructing the ion implanter to stop emitting the beam. In this way, the ion implanter may turn off the beam after receiving the first control instruction.

[0131] S803: Recording ion implantation information when abnormal fluctuations occur in the voltage signal.

[0132] The ion implantation information may include, but is not limited to, the location of the target entity when the voltage signal fluctuates abnormally (or the abnormal ion implantation region of the target entity), the ion implantation direction, and the number of ion implantations (i.e., the number of ion passes). In addition, there is no strict order of execution between S802 and S803. Figure 8 As shown, S802 occurs before S803. Of course, S802 may also occur after S803, or S802 and S803 may occur simultaneously.

[0133] S804: Move the target entity from the current position to the first position.

[0134] S805: Whether the beam current returns to normal. If yes, proceed to S806; if no, proceed to S807.

[0135] Specifically, when executing step S805, after determining to move the target entity from the current position to the first position, the controller can send a second control instruction to the ion implanter for instructing the ion implanter to re-emit the beam. In this way, after receiving the second control instruction, the ion implanter can turn on the beam, thereby detecting in real time whether the beam sent by the ion implanter has returned to normal, that is, whether the voltage signal of the ion implanter has returned to normal from abnormal fluctuations.

[0136] S806: Enter the ion replenishment process.

[0137] That is, if the voltage signal returns to normal within a set time range, ion injection is performed on the abnormal ion injection area of ​​the target entity based on the ion injection information corresponding to the abnormal fluctuation.

[0138] S807: Remove the target entity.

[0139] That is, if the voltage signal does not return to normal within the set time range, the target entity can be removed, and a prompt message is sent to the target object to remind the target object to perform ion replenishment on the target entity.

[0140] In summary, in the abnormality handling method of the ion implanter provided in the embodiment of the present application, when ion implantation is performed on the target entity, the voltage signal of the ion implanter can be detected in real time. Once an abnormal fluctuation is found in the voltage signal, a first control instruction to stop emitting the beam is sent to the ion implanter, and when the target entity is moved from the current position to the first position, a second control instruction to re-emit the beam is sent to the ion implanter. In this way, when it is determined that the voltage signal or the beam returns to normal within the set time range, the abnormal ion implantation area of ​​the target entity can be supplemented with ions based on the ion implantation information corresponding to the abnormal fluctuation, thereby solving the problem of poor injection stability of the ion implanter caused by abnormal fluctuations (for example, glitch changes), thereby improving the injection stability of the ion implanter.

[0141] Moreover, based on the above method, during the ion implantation process, it is possible to quickly and effectively detect whether there is an abnormality in the power supply of the ion implantation machine, so that reasonable ion replenishment or re-injection measures (i.e., abnormality handling process) can be taken for abnormal interruptions that occur during the ion implantation process, thereby ensuring that the process performance of the target entity is not affected.

[0142] Further, based on the same technical concept, the embodiment of the present application provides an abnormality handling device for an ion implanter, and the abnormality handling device for an ion implanter is used to implement the above method flow of the embodiment of the present application. Fig. 9 As shown, the abnormality processing device 900 of the ion implanter may include: a signal acquisition module 901, a position determination module 902 and an ion implantation module 903, wherein:

[0143] The signal acquisition module 901 is used to acquire a voltage signal of the ion implanter for ion implantation of a target entity, and to send a first control instruction to the ion implanter when the voltage signal has an abnormal fluctuation; wherein the voltage signal is used to characterize the size of the beam emitted by the ion implanter, and the first control instruction is used to instruct the ion implanter to stop emitting the beam;

[0144] The position determination module 902 is used to send a second control instruction to the ion implanter when it is determined that the target entity is moved from the current position to the first position; wherein the first position is an end position of the target entity during the ion implantation process, and the second control instruction is used to instruct the ion implanter to re-emit the beam;

[0145] The ion implantation module 903 is used to perform ion implantation on the abnormal ion implantation area of ​​the target entity based on the ion implantation information corresponding to the abnormal fluctuation if the voltage signal returns to normal within a set time range.

[0146] In an optional embodiment, when acquiring a voltage signal of an ion implanter for ion implantation of a target entity, the signal acquisition module 901 is specifically used to:

[0147] Acquire an analog signal when the ion implanter performs ion implantation on a target entity, and perform analog-to-digital conversion on the analog signal to obtain a corresponding digital signal;

[0148] The digital signal is filtered to obtain a voltage signal.

[0149] In an optional embodiment, when performing ion supplementation on the abnormal ion implantation area of ​​the target entity based on the ion implantation information corresponding to the abnormal fluctuation, the ion implantation module 903 is specifically used to:

[0150] If it is determined based on the ion implantation information that the abnormal fluctuation occurs during the movement of the target entity along the first direction, the target entity is moved from the first position to the second position; wherein the first direction is the direction from the first position to the second position, and the second position is another end point position of the target entity during the ion implantation movement;

[0151] The target entity is moved along a second direction until the abnormal ion implantation area is completed; wherein the second direction is a direction from the second position to the first position.

[0152] In an optional embodiment, before moving the target entity from the first position to the second position, the ion implantation module 903 is further configured to:

[0153] A third control instruction is sent to the ion implanter; the third control instruction is used to instruct the ion implanter to turn off the beam;

[0154] After moving the target entity from the first position to the second position, and before moving the target entity along the second direction until the abnormal ion implantation area is completed, the ion implantation module 903 is further used to:

[0155] A fourth control instruction is sent to the ion implanter; the fourth control instruction is used to instruct the ion implanter to turn on the beam.

[0156] In an optional embodiment, when performing ion supplementation on the abnormal ion implantation area of ​​the target entity based on the ion implantation information corresponding to the abnormal fluctuation, the ion implantation module 903 is specifically used to:

[0157] If it is determined based on the ion implantation information that the abnormal fluctuation occurs during the movement of the target entity along the second direction, the target entity is moved along the first direction until the abnormal ion implantation area is filled;

[0158] The second direction is the direction from the second position to the first position, the first direction is the direction from the first position to the second position, and the second position is another end point position of the target entity during the ion implantation movement process.

[0159] In an optional embodiment, after sending the second control instruction to the ion implanter, the ion implantation module is further used to:

[0160] If the voltage signal does not return to normal within the set time range, the target entity is removed and a prompt message is sent to the target object; the indication message is used to remind the target object to perform ion replenishment on the target entity.

[0161] Based on the description of the above method embodiment and device embodiment, the exemplary embodiment of the present invention further provides an electronic device, including: at least one processor; and a memory connected to the at least one processor in communication. The memory stores a computer program that can be executed by the at least one processor, and the computer program is used to enable the electronic device to perform the method according to the embodiment of the present invention when executed by the at least one processor.

[0162] An embodiment of the present application also provides a non-transitory computer-readable storage medium storing a computer program, wherein the computer program, when executed by a processor of a computer, is used to cause the computer to execute a method according to an embodiment of the present application.

[0163] An embodiment of the present application also provides a computer program product, including a computer program, wherein the computer program, when executed by a processor of a computer, is used to cause the computer to execute a method according to an embodiment of the present application.

[0164] See also Fig.10 As shown, the structured block diagram of the electronic device 1000 that can be used as the server or client of the present application will now be described, which is an example of the hardware device that can be applied to various aspects of the present application. The electronic device is intended to represent the computer device of various forms of digital electronics, such as, laptop computers, desktop computers, workbenches, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as, personal digital processing, cellular phones, smart phones, wearable devices and other similar computing devices. The components shown herein, their connections and relationships, and their functions are only used as examples, and are not intended to limit the implementation of the present application described herein and / or required.

[0165] like Fig.10As shown, the electronic device 1000 includes a computing unit 1001, which can perform various appropriate actions and processes according to a computer program stored in a read only memory (ROM) 1002 or a computer program loaded from a storage unit 1008 to a random access memory (RAM) 1003. In the RAM 1003, various programs and data required for the operation of the device 1000 can also be stored. The computing unit 1001, the ROM 1002, and the RAM 1003 are connected to each other via a bus 1004. An I / O interface 1005 is also connected to the bus 1004.

[0166] A plurality of components in the electronic device 1000 are connected to the I / O interface 1005, including: an input unit 1006, an output unit 1007, a storage unit 1008, and a communication unit 1009. The input unit 1006 may be any type of device capable of inputting information to the electronic device 1000, and the input unit 1006 may receive input digital or character information, and generate key signal inputs related to user settings and / or function control of the electronic device. The output unit 1007 may be any type of device capable of presenting information, and may include but is not limited to a display, a speaker, a video / audio output terminal, a vibrator, and / or a printer. The storage unit 1008 may include but is not limited to a disk, an optical disk. The communication unit 1009 allows the electronic device 1000 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks, and may include but is not limited to a modem, a network card, an infrared communication device, a wireless communication transceiver, and / or a chipset, such as a Bluetooth device, a WiFi device, a worldwide interoperability for microwave access (WiMax) device, a cellular communication device, and / or the like.

[0167] The computing unit 1001 may be a variety of general and / or special processing components with processing and computing capabilities. Some examples of the computing unit 1001 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, digital signal processors (DSP), and any appropriate processors, controllers, microcontrollers, etc. The computing unit 1001 performs the various methods and processes described above. For example, in some embodiments, the exception handling method of the above-mentioned ion implanter may be implemented as a computer software program, which is tangibly included in a machine-readable medium, such as a storage unit 1008. In some embodiments, part or all of the computer program may be loaded and / or installed on the electronic device 1000 via ROM 1002 and / or communication unit 1009. In some embodiments, the computing unit 1001 may be configured to perform the exception handling method of the above-mentioned ion implanter by any other appropriate means (e.g., by means of firmware).

[0168] The program code for implementing the method of the present application can be written in any combination of one or more programming languages. These program codes can be provided to a processor or controller of a general-purpose computer, a special-purpose computer, or other programmable data processing device, so that the program code, when executed by the processor or controller, implements the functions / operations specified in the flow chart and / or block diagram. The program code can be executed entirely on the machine, partially on the machine, partially on the machine and partially on a remote machine as a stand-alone software package, or entirely on a remote machine or server.

[0169] In the context of the present application, a machine-readable medium may be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, device, or equipment. A machine-readable medium may be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium may include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, device, or equipment, or any suitable combination of the foregoing. A more specific example of a machine-readable storage medium may include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a RAM, a ROM, an erasable programmable read-only memory (EPROM) or a flash memory, an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0170] As used herein, the terms "machine-readable medium" and "computer-readable medium" refer to any computer program product, apparatus, and / or device (e.g., disk, optical disk, memory, programmable logic device (PLD)) for providing machine instructions and / or data to a programmable processor, including a machine-readable medium that receives machine instructions as a machine-readable signal. The term "machine-readable signal" refers to any signal for providing machine instructions and / or data to a programmable processor.

[0171] To provide interaction with a user, the systems and techniques described herein can be implemented on a computer having: a display device (e.g., a cathode ray tub (CRT) or a liquid crystal display (LCD) monitor) for displaying information to the user; and a keyboard and pointing device (e.g., a mouse or trackball) through which the user can provide input to the computer. Other types of devices can also be used to provide interaction with the user; for example, the feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including acoustic input, voice input, or tactile input).

[0172] The systems and techniques described herein can be implemented in a computing system that includes back-end components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes front-end components (e.g., a user computer with a graphical user interface or a web browser through which a user can interact with implementations of the systems and techniques described herein), or a computing system that includes any combination of such back-end components, middleware components, or front-end components. The components of the system can be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), and the Internet.

[0173] A computer system may include clients and servers. Clients and servers are generally remote from each other and usually interact through a communication network. The relationship of client and server is generated by computer programs running on respective computers and having a client-server relationship to each other.

[0174] Furthermore, it should be understood that what is disclosed above is only a preferred embodiment of the present application, and certainly cannot be used to limit the scope of rights of the present invention. Therefore, equivalent changes made according to the claims of the present invention are still within the scope covered by the present application.

Claims

1. A method for handling abnormalities of an ion implanter, characterized in that: include: Acquire a voltage signal of an ion implanter for ion implantation into a target entity, and send a first control instruction to the ion implanter when the voltage signal has abnormal fluctuations; wherein the voltage signal is used to characterize the size of the beam emitted by the ion implanter, and the first control instruction is used to instruct the ion implanter to stop emitting the beam; When it is determined that the target entity is to be moved from the current position to the first position, a second control instruction is sent to the ion implanter; wherein the first position is an end point position of the target entity during the ion implantation movement process, and the second control instruction is used to instruct the ion implanter to re-emit the beam; If the voltage signal returns to normal within a set time range, ion injection is performed on the abnormal ion injection area of ​​the target entity based on the ion injection information corresponding to the abnormal fluctuation.

2. The method according to claim 1, characterized in that The step of obtaining a voltage signal of an ion implanter for performing ion implantation on a target entity comprises: Acquiring an analog signal when the ion implanter performs ion implantation on the target entity, and performing analog-to-digital conversion on the analog signal to obtain a corresponding digital signal; The digital signal is filtered to obtain the voltage signal.

3. The method according to claim 1, characterized in that The abnormal fluctuation is that the voltage fluctuation amplitude in the voltage signal is less than or equal to a set fluctuation amplitude threshold, and / or the abnormal fluctuation time is greater than or equal to a set time threshold.

4. The method according to any one of claims 1 to 3, characterized in that The method of performing ion supplementation on the abnormal ion implantation area of ​​the target entity based on the ion implantation information corresponding to the abnormal fluctuation includes: If it is determined based on the ion implantation information that the abnormal fluctuation occurs during the movement of the target entity along a first direction, the target entity is moved from the first position to a second position; wherein the first direction is a direction from the first position to the second position, and the second position is another end point position of the target entity during the ion implantation movement process; The target entity is moved along a second direction until the abnormal ion implantation area is replenished; wherein the second direction is a direction from the second position to the first position.

5. The method according to claim 4, characterized in that Before moving the target entity from the first position to the second position, the method further includes: Sending a third control instruction to the ion implanter; the third control instruction is used to instruct the ion implanter to turn off the beam; After the target entity is moved from the first position to the second position, and before the target entity is moved along the second direction until the abnormal ion implantation area is completed, the method further includes: A fourth control instruction is sent to the ion implanter; the fourth control instruction is used to instruct the ion implanter to turn on the beam.

6. The method according to any one of claims 1 to 3, characterized in that The method of performing ion supplementation on the abnormal ion implantation area of ​​the target entity based on the ion implantation information corresponding to the abnormal fluctuation includes: If it is determined based on the ion implantation information that the abnormal fluctuation occurs during the movement of the target entity along the second direction, the target entity is moved along the first direction until the abnormal ion implantation area is filled; The second direction is a direction from the second position to the first position, the first direction is a direction from the first position to the second position, and the second position is another end point position of the target entity during the ion implantation movement process.

7. The method according to any one of claims 1 to 3, characterized in that After sending the second control instruction to the ion implanter, the method further includes: If the voltage signal does not return to normal within a set time range, the target entity is removed and a prompt message is sent to the target object; the indication message is used to remind the target object to perform ion replenishment on the target entity.

8. An abnormality handling device for an ion implanter, characterized in that: include: A signal acquisition module, used to acquire a voltage signal of an ion implanter for ion implantation into a target entity, and to send a first control instruction to the ion implanter when the voltage signal has an abnormal fluctuation; wherein the voltage signal is used to characterize the size of the beam emitted by the ion implanter, and the first control instruction is used to instruct the ion implanter to stop emitting the beam; A position determination module, configured to send a second control instruction to the ion implanter when determining to move the target entity from a current position to a first position; wherein the first position is an end position of the target entity during the ion implantation process, and the second control instruction is used to instruct the ion implanter to re-emit the beam; The ion implantation module is used to perform ion implantation on the abnormal ion implantation area of ​​the target entity based on the ion implantation information corresponding to the abnormal fluctuation if the voltage signal returns to normal within a set time range.

9. An electronic device, comprising: processor; as well as Memory for storing programs, The program includes instructions, which, when executed by the processor, cause the processor to perform the method according to any one of claims 1 to 7.

10. A non-transitory computer-readable storage medium storing computer instructions, wherein: The computer instructions are used to cause the computer to execute the method according to any one of claims 1 to 7.

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