Composite material, film and application thereof

Abstract

The invention belongs to the technical field of display, and relates to a composite material, a film and application thereof. The composite material comprises a reinforcing agent, a passivating agent and a solvent, the reinforcing agent and the passivating agent are dispersed in the solvent, and the boiling point of the passivating agent is higher than that of the reinforcing agent; the reinforcing agent contains at least one of a hydroxyl group, a thiol group, a carboxyl group, an amido group, an amide group and an aldehyde group; and the passivating agent is glycerol or a glycerol derivative. The reinforcing agent in the composite material is used as an oxygen vacancy defect passivation element and a passivator combination / adsorption reinforcing agent, and the boiling point of the passivator is higher than that of the reinforcing agent, so that the reinforcing agent can be effectively kept on the surface and inside the metal oxide layer and is prevented from being volatilized, the reinforcing agent can effectively passivate oxygen vacancies of the metal oxide layer, and the service life of the metal oxide layer is prolonged. Therefore, by modifying the metal oxide layer with the composite material, the electrical and chemical stability of the film layer can be improved, and the conductivity is improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and more specifically, to a composite material, a film and applications thereof. Background Art

[0002] Metal oxides have suitable electron energy levels and charge mobility and are widely used in optoelectronic devices. Oxygen vacancy defects are a common defect form in metal oxides, which refers to the oxygen atoms leaving the lattice position in the metal oxide crystal to form vacancies; active sites such as oxygen vacancy defects affect the electrical, optical and magnetic properties of metal oxides, and affect the performance and stability of devices based on metal oxides. Summary of the invention

[0003] Based on this, the embodiments of the present application provide a composite material, a film and applications thereof.

[0004] In order to solve the above technical problems, the present application provides a composite material, which adopts the following technical solution:

[0005] A composite material, comprising: a reinforcing agent, a passivating agent and a solvent, wherein the reinforcing agent and the passivating agent are dispersed in the solvent, and the boiling point of the passivating agent is higher than the boiling point of the reinforcing agent;

[0006] The enhancer contains at least one of a hydroxyl group, a thiol group, a carboxyl group, an amine group, an amide group, and an aldehyde group;

[0007] The passivating agent is glycerol or a glycerol derivative.

[0008] Further, the enhancer is a polar solvent; and / or

[0009] The boiling point of the passivating agent is higher than 250°C; and / or

[0010] The deactivator has a higher boiling point than the solvent; and / or

[0011] The molar ratio of the passivator to the enhancer is (1:0.01) to (1:100); and / or

[0012] The molar ratio of the passivating agent to the solvent is (1:20) to (1:5000); and / or

[0013] The molar ratio of the enhancer to the solvent is (1:20) to (1:5000).

[0014] Furthermore, the polarity of the enhancer is greater than 4; and / or

[0015] The glycerol derivative is selected from at least one of formulas Ⅰ, Ⅱ, Ⅲ, Ⅳ, and Ⅴ:

[0016]

[0017] Among them, R 1 , R 2 , R 3 Each independently selected from a hydrogen atom, a C1-C6 hydrocarbon group, a halogen atom, a hydroxyl group, R 8 COO-, C1-C6 alkoxy, R 8 is selected from a C1-C6 hydrocarbon group, R 1 , R 2 , R 3 At least one of them is selected from hydroxyl groups and not all of them are hydroxyl groups;

[0018]

[0019] Among them, R 4 , R 5 Each is independently selected from a hydrogen atom, a halogen atom, a cyano group, a hydroxyl group, a carboxyl group, an aldehyde group, a nitro group, a C1-C6 hydrocarbon group, R 9 COO-, R 9 A hydrocarbon group selected from C1-C6;

[0020]

[0021] Among them, R 6 , R 7 Each is independently selected from a hydrogen atom, a halogen atom, a cyano group, a hydroxyl group, a carboxyl group, an aldehyde group, a nitro group, a C1-C6 hydrocarbon group, R 10 COO-, R 10 A hydrocarbon group selected from C1-C6.

[0022] Furthermore, the glycerol derivative includes at least one of glycerol ester, glycerol carbonate, glycerol ether, glycerol acetal, and glycerol ketal;.

[0023] and / or, the enhancer comprises at least one of water, methanol, ethanol, pyridine, glycerol, ethyl nitrate, propyl sulfate, N,N-dimethylformamide, N,N-dimethylformamide, formic acid, acetic acid, propionic acid, acrylic acid, mercaptan, N-methylthioamide, ethyl thiocyanate, ethyl thiocyanate, acetic acid, propionic acid, benzoic acid, fluoroacetic acid, lactic acid, malic acid, fumaric acid, maleic acid, stearic acid, ethanolamine, isopropylamine, propylamine, ethylamine, methylamine, aniline, dimethylamine, trimethylamine, ethylenediamine, ammonia, N,N-dimethylacetamide, N-methylacetanilide, N,N-dimethylformamide, N-methylacetamide, N-methylformamide, adipic acid, acetamide, formamide, lauryl aldehyde, nonanal, octanal, heptaldehyde, hexanal, valeraldehyde, butyraldehyde, propionaldehyde, acetaldehyde, and formaldehyde; and / or

[0024] The solvent is selected from at least one of acetonitrile, methanol, ethanol, propanol, butanol, pentanol, hexanol, heptanol, octanol, nonanol, decanol, ethylene glycol, propylene glycol, butylene glycol, pentanediol, hexanediol, heptanediol, octanol, nonanediol, decanol, pyridine, tetrahydrofuran, dimethylformamide, dimethylacetamide, ethyl acetate, butyl acetate, acetyl chloride, acetone, methyl isobutyl ketone, methyl methacrylate, anisole, dimethyl sulfoxide, N-methylpyrrolidine, N,N-dimethylacetamide, N-methylpropionamide, N,N-dimethylformamide, tetramethylethylenediamine, N-methylaniline, benzophenone, ethyl phenyl ether, isopropylbenzene, acetophenone, ethyl methyl ketone, n-butylamine, diethylamine, n-propylamine, dipropylamine, triethylamine, tributylamine, and diphenylamine.

[0025] In order to solve the above technical problems, the present application also provides a method for preparing a thin film, which adopts the following technical solution:

[0026] A method for preparing a thin film comprises the following steps:

[0027] providing a substrate, and preparing a metal oxide layer on the substrate;

[0028] Arranging a composite material on the metal oxide layer, and modifying the metal oxide layer with the composite material to obtain a thin film;

[0029] Wherein, the composite material is the composite material described above.

[0030] Furthermore, the step of providing a composite material on the metal oxide layer and modifying the metal oxide layer with the composite material to obtain a thin film specifically includes:

[0031] placing the composite material on the metal oxide layer to obtain a liquid film;

[0032] The liquid film is subjected to heat treatment so that the liquid film modifies the metal oxide layer.

[0033] Furthermore, in the step of heat treating the liquid film, the heating temperature of the heat treatment is 25° C. to 230° C., and the heating time is 1 min to 180 min; and / or

[0034] In the step of modifying the metal oxide layer with the liquid film, the liquid film forms an interface modification layer; or, in the step of modifying the metal oxide layer with the liquid film, the liquid film forms an interface modification layer, and a passivation layer is formed between the interface modification layer and the metal oxide layer; or, in the step of modifying the metal oxide layer with the liquid film, the liquid film is exhausted;

[0035] And / or, the metal oxide includes at least one of molybdenum oxide, tungsten oxide, vanadium oxide, rhenium oxide, zinc oxide, nickel oxide, titanium oxide, tin oxide, and zirconium oxide;

[0036] and / or, the metal oxide is doped with a metal, the metal being selected from at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium and gadolinium;

[0037] And / or, the metal oxide has a modified ligand, and the ligand is at least one of an acid, a thiol, an amine, a phosphine, a phospholipid, a phospholipid, a polyvinylpyridine, a fluoroborate, a fluorophosphate, a halogen, a mercapto alcohol, a betaine, and acetylacetone.

[0038] In order to solve the above technical problems, the embodiment of the present application further provides a film, which adopts the following technical solution:

[0039] A film is prepared by the film preparation method as described above.

[0040] In order to solve the above technical problems, the embodiment of the present application further provides a photoelectric device, which adopts the following technical solution:

[0041] A photoelectric device comprises a film prepared by the above film preparation method or the above film.

[0042] Furthermore, the number of the thin film is one, and the metal oxide layer of the thin film is used as a hole functional layer;

[0043] Alternatively, the number of the thin films is two, and the metal oxide layers of the two thin films serve as a hole functional layer and an electron functional layer, respectively.

[0044] In order to solve the above technical problems, the embodiment of the present application further provides a display device, which adopts the following technical solution:

[0045] A display device comprises the film as described above, or comprises the optoelectronic device as described above.

[0046] Compared with the prior art, the embodiments of the present application mainly have the following beneficial effects: the reinforcing agent in the composite material acts as an oxygen vacancy defect passivating element, and the passivating agent combines with / adsorbs the reinforcing agent. Since the boiling point of the passivating agent is higher than that of the reinforcing agent, the reinforcing agent can be effectively maintained on the surface and inside of the metal oxide layer to prevent the volatilization of the reinforcing agent, so that the reinforcing agent can effectively passivate the oxygen vacancies in the metal oxide layer. Therefore, by modifying the metal oxide layer with the composite material, the electrical and chemical stability of the film layer can be improved, and the conductivity can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the scheme of the present application, a brief introduction is given below to the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0048] Figure 1 is a flow chart of an embodiment of a method for preparing a thin film in the present application;

[0049] Figure 2 is a schematic structural diagram of an embodiment of a film in the present application;

[0050] Figure 3 is a schematic structural diagram of another embodiment of a film in the present application;

[0051] Figure 4 is a schematic structural diagram of another embodiment of a thin film in the present application;

[0052] Figure 5 is a schematic structural diagram of an embodiment of a photoelectric device in the present application;

[0053] Figure 6 It is a schematic structural diagram of another embodiment of a photoelectric device in the present application.

[0054] Reference numerals:

[0055] 10. Thin film; 11. Metal oxide layer; 12. Interface modification layer; 13. Passivation layer; 20. First electrode; 30. Second electrode; 40. Light-emitting layer. DETAILED DESCRIPTION

[0056] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by technicians in the technical field of this application; the terms used in the specification of the application herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned drawings are intended to cover non-exclusive inclusions. The terms "first", "second", etc. in the specification and claims of this application or the above-mentioned drawings are used to distinguish different objects, not to describe a specific order.

[0057] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0058] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings.

[0059] The embodiment of the present application provides a composite material, comprising: a reinforcing agent, a passivating agent and a solvent, wherein the reinforcing agent and the passivating agent are dispersed in the solvent, and the boiling point of the passivating agent is higher than the boiling point of the reinforcing agent;

[0060] The enhancer contains at least one of a hydroxyl group, a thiol group, a carboxyl group, an amine group, an amide group, and an aldehyde group;

[0061] The passivating agent is glycerol or a glycerol derivative.

[0062] The composite material provided in this embodiment is used to be arranged on the surface of the metal oxide layer to passivate the oxygen vacancies of the metal oxide. Specifically, the passivator is glycerol or a glycerol derivative, which itself contains polar hydroxyl groups and can combine with active sites such as oxygen vacancies in the metal oxide layer to passivate defects. Since glycerol or a glycerol derivative has a relatively high boiling point or sublimation temperature, it is not easy to introduce too much to avoid a large amount of residue on the surface of the metal oxide layer that will affect the physical / chemical properties of the interface. However, in order to avoid the inability to completely passivate the defects, an enhancer having at least one of hydroxyl, thiol, carboxyl, amine, amide, and aldehyde groups is introduced. The enhancer serves as an oxygen vacancy defect passivation element to enhance the defect passivation effect. The enhancer combines with active sites such as oxygen vacancies in the metal oxide film layer through the above-mentioned polar groups to passivate the defects, thereby further improving the film quality.

[0063] In this embodiment, since the passivator contains polar hydroxyl groups, it helps the passivator to bind / adsorb the enhancer. Since the boiling point of the passivator is higher than that of the enhancer, the enhancer can be effectively maintained on the surface and inside of the metal oxide layer to prevent the enhancer from volatilizing, ensuring that the enhancer fully reacts with the defects of the metal oxide layer, so that the enhancer can effectively passivate the oxygen vacancies in the metal oxide layer. Therefore, by modifying the metal oxide layer with a composite material, the electrical and chemical stability of the film layer can be improved, and the conductivity can be improved.

[0064] In this embodiment, glycerol or glycerol derivatives have strong polarity and molecular dipoles. When introduced into the film layer of the optoelectronic device, they will form a dipole moment with the same dipole orientation as the charge transfer or injection layer molecules themselves at the interface inside the film layer and the surface interface. The two dipoles are superimposed and coupled with each other, thereby enhancing the built-in electric field of the device, reducing the barrier for charge injection from the electrode to the interface layer, and promoting charge transfer. Although glycerol or glycerol derivatives may improve the electrical insulation of the film layer, since glycerol or glycerol derivatives improve the charge injection or transfer of the film layer, the effect of its insulation on the charge injection or transfer can be offset; therefore, the use of glycerol or glycerol derivatives will not have a significant impact on the overall carrier dynamics of the device.

[0065] Furthermore, the enhancer is a polar solvent.

[0066] In this embodiment, the enhancer is a polar solvent having polar groups such as hydroxyl, thiol, carboxyl, amine, amide, and aldehyde groups. The polar groups bond with uncoordinated oxygen atoms in the metal oxide to fill the gaps created by oxygen vacancies. Through the passivation reaction of the polar groups, the oxygen vacancies or other defects in the metal oxide can be repaired, thereby improving the electrical and chemical stability of the film layer and improving the conductivity.

[0067] Furthermore, the boiling point of the passivating agent is higher than 250°C.

[0068] In this embodiment, the boiling point of the passivator is higher than 250°C, which is beneficial for the passivator to still exist and adsorb the enhancer on the surface of the metal oxide layer after the solvent evaporates; and the high-boiling point passivator continues to exist in the subsequent treatment, which can maintain the reaction between the enhancer and the metal oxide film layer, so that the groups in the enhancer can effectively passivate the oxygen vacancies in the metal oxide layer.

[0069] Furthermore, the boiling point of the passivating agent is higher than that of the solvent.

[0070] In this embodiment, the solvent serves as a carrier of the enhancer and the passivator, and the boiling point of the passivator is higher than that of the solvent, so that after the solvent as a carrier evaporates, the passivator still exists and adsorbs the enhancer on the surface of the metal oxide layer.

[0071] Furthermore, the molar ratio of the passivator to the enhancer is (1:0.01) to (1:100).

[0072] In this embodiment, the molar ratio of the passivator to the enhancer is between (1:0.01) and (1:100), so that the passivator can effectively adsorb the enhancer without being oversaturated, and can also avoid too little enhancer. In this embodiment, the enhancer can be effectively maintained on the surface of the metal oxide layer to react.

[0073] In some optional embodiments of this embodiment, the molar ratio of the passivator to the enhancer is any one of 1:0.01, 1:1, 1:10, 1:20, 1:30, 1:40, 1:50, 1:60, 1:70, 1:80, 1:90, 1:100, etc., or a range between any two of them.

[0074] Furthermore, the molar ratio of the passivating agent to the solvent is (1:20) to (1:5000).

[0075] In this embodiment, the molar ratio of the passivator to the solvent is between (1:20) and (1:5000), so that the passivator can effectively adsorb the enhancer without being oversaturated.

[0076] In some optional implementations of this embodiment, the molar ratio of the passivator to the solvent is any one of 1:20, 1:100, 1:1000, 1:1500, 1:2000, 1:2500, 1:3000, 1:3500, 1:4000, 1:4500, 1:5000, etc., or a range between any two of them.

[0077] Furthermore, the molar ratio of the enhancer to the solvent is (1:20) to (1:5000).

[0078] In this embodiment, the molar ratio of the enhancer to the solvent is between (1:20) and (1:5000) to avoid the defect that the enhancer is too little and cannot effectively passivate the metal oxide layer.

[0079] In some optional implementations of this embodiment, the molar ratio of the enhancer to the solvent is any one of 1:20, 1:100, 1:1000, 1:1500, 1:2000, 1:2500, 1:3000, 1:3500, 1:4000, 1:4500, 1:5000, etc., or a range between any two of them.

[0080] Furthermore, the polarity of the enhancer is greater than 4.

[0081] In this embodiment, the charge distribution of defects in the metal oxide is uneven, and the greater the polarity of the enhancer, the greater the unevenness of the charge distribution in its molecules or groups. Therefore, selecting an enhancer with a polarity greater than 4 helps the enhancer to combine with the metal oxide defects, thereby passivating or stabilizing the defects.

[0082] Furthermore, the glycerol derivative is selected from at least one of formulas Ⅰ, Ⅱ, Ⅲ, Ⅳ, and Ⅴ:

[0083]

[0084] Among them, R 1 , R2 , R 3 Each independently selected from a hydrogen atom, a C1-C6 hydrocarbon group, a halogen atom, a hydroxyl group, R 8 COO-, C1-C6 alkoxy, R 8 is selected from a C1-C6 hydrocarbon group, R 1 , R 2 , R 3 At least one of them is selected from hydroxyl groups and not all of them are hydroxyl groups;

[0085]

[0086] Among them, R 4 , R 5 Each is independently selected from a hydrogen atom, a halogen atom, a cyano group, a hydroxyl group, a carboxyl group, an aldehyde group, a nitro group, a C1-C6 hydrocarbon group, R 9 COO-, R 9 A hydrocarbon group selected from C1-C6;

[0087]

[0088] Among them, R 6 , R 7 Each is independently selected from a hydrogen atom, a halogen atom, a cyano group, a hydroxyl group, a carboxyl group, an aldehyde group, a nitro group, a C1-C6 hydrocarbon group, R 10 COO-, R 10 A hydrocarbon group selected from C1-C6.

[0089] In this embodiment, the C1-C6 hydrocarbon group is selected from methyl, ethyl, propyl, vinyl, isopropyl, etc.; the C1-C6 alkoxy group is selected from methoxy, ethoxy, isopropoxy, n-butoxy, etc.

[0090] Furthermore, the glycerol derivative includes at least one of glycerol ester, glycerol carbonate, glycerol ether, glycerol acetal, and glycerol ketal.

[0091] In this embodiment, when the glycerol derivative is selected from glycerol ester, glycerol carbonate or glycerol ether, the glycerol derivative is selected from Formula I; specifically, the glycerol derivative is selected from glycerol ester, glycerol carbonate or glycerol ether, depending on R 1 , R 2 , R 3 The type of group attached.

[0092] In this embodiment, glycerol can undergo condensation reactions with aldehydes and ketones, respectively, to produce cyclic acetals and ketals. Any two hydroxyl groups in glycerol can participate in the reaction to form a pair of isomers with a five-membered ring and a six-membered ring structure; therefore, when the glycerol derivative is selected from glycerol acetal, the glycerol derivative is selected from Formula II and III; when the glycerol derivative is selected from glycerol ketal, the glycerol derivative is selected from Formula IV and V.

[0093] Further, the enhancer includes at least one of water, methanol, ethanol, pyridine, glycerol, ethyl nitrate, propyl sulfate, N,N-dimethylformamide, N,N-dimethylformamide, formic acid, acetic acid, propionic acid, acrylic acid, mercaptan, N-methylthioamide, ethyl thiocyanate, ethyl thiocyanate, acetic acid, propionic acid, benzoic acid, fluoroacetic acid, lactic acid, malic acid, fumaric acid, maleic acid, stearic acid, ethanolamine, isopropylamine, propylamine, ethylamine, methylamine, aniline, dimethylamine, trimethylamine, ethylenediamine, ammonia water, N,N-dimethylacetamide, N-methylacetanilide, N,N-dimethylformamide, N-methylacetamide, N-methylformamide, adipic acid, acetamide, formamide, lauryl aldehyde, nonanal, octanal, heptaldehyde, hexanal, valeraldehyde, butyraldehyde, propionaldehyde, acetaldehyde, and formaldehyde.

[0094] In this embodiment, water, methanol, ethanol, pyridine, glycerol, ethyl nitrate, propyl sulfate, N,N-dimethylformamide, N,N-dimethylformamide, formic acid, acetic acid, propionic acid, and acrylic acid contain hydroxyl groups in their molecular structures, which can bond with uncoordinated oxygen atoms in metal oxides.

[0095] In this embodiment, the molecular structures of mercaptan, N-methylthioamide, ethyl thiocyanate and ethyl thiocyanate contain thiol groups, which can bond with uncoordinated oxygen atoms in metal oxides.

[0096] In this embodiment, the molecular structures of acetic acid, propionic acid, benzoic acid, fluoroacetic acid, lactic acid, malic acid, fumaric acid, maleic acid, and stearic acid contain carboxyl groups, which can bond with uncoordinated oxygen atoms in metal oxides.

[0097] In this embodiment, ethanolamine, isopropylamine, propylamine, ethylamine, methylamine, aniline, dimethylamine, trimethylamine, ethylenediamine, and ammonia water contain amine groups in their molecular structures, which can bond with uncoordinated oxygen atoms in metal oxides.

[0098] In this embodiment, the molecular structures of N,N-dimethylacetamide, N-methylacetanilide, N,N-dimethylformamide, N-methylacetamide, N-methylformamide, adipamide, acetamide, and formamide contain amides, which can bond with uncoordinated oxygen atoms in metal oxides.

[0099] In this embodiment, the molecular structures of lauric aldehyde, nonanal, octanal, heptaldehyde, hexanal, valeraldehyde, butyraldehyde, propionaldehyde, acetaldehyde and formaldehyde contain aldehyde groups, which can bond with uncoordinated oxygen atoms in metal oxides.

[0100] Further, the solvent is selected from at least one of acetonitrile, methanol, ethanol, propanol, butanol, pentanol, hexanol, heptanol, octanol, nonanol, decanol, ethylene glycol, propylene glycol, butylene glycol, pentanediol, hexanediol, heptanediol, octanol, nonanediol, decanol, pyridine, tetrahydrofuran, dimethylformamide, dimethylacetamide, ethyl acetate, butyl acetate, acetyl chloride, acetone, methyl isobutyl ketone, methyl methacrylate, anisole, dimethyl sulfoxide, N-methylpyrrolidine, N,N-dimethylacetamide, N-methylpropionamide, N,N-dimethylformamide, tetramethylethylenediamine, N-methylaniline, benzophenone, ethyl phenyl ether, isopropylbenzene, acetophenone, ethyl methyl ketone, n-butylamine, diethylamine, n-propylamine, dipropylamine, triethylamine, tributylamine, and diphenylamine.

[0101] In this embodiment, the solvent can dissolve the passivator and is miscible with the enhancer.

[0102] The present application also provides a method for preparing a thin film, such as Figure 1 As shown, the preparation method comprises the following steps:

[0103] S10, providing a substrate, and preparing a metal oxide layer on the substrate;

[0104] S20, disposing a composite material on the metal oxide layer, and modifying the metal oxide layer with the composite material to obtain a thin film; wherein the composite material is the composite material as described above.

[0105] In this embodiment, the reinforcing agent in the composite material acts as a passivating element for oxygen vacancy defects, and the passivating agent combines with / adsorbs the reinforcing agent. Since the boiling point of the passivating agent is higher than that of the reinforcing agent, the reinforcing agent can be effectively maintained on the surface and inside of the metal oxide layer to prevent the volatilization of the reinforcing agent, so that the reinforcing agent can effectively passivate the oxygen vacancies in the metal oxide layer. Therefore, by modifying the metal oxide layer with the composite material, the electrical and chemical stability of the film can be improved, and the conductivity can be improved.

[0106] Furthermore, the step of providing a composite material on the metal oxide layer and modifying the metal oxide layer with the composite material to obtain a thin film specifically includes:

[0107] placing the composite material on the metal oxide layer to obtain a liquid film;

[0108] The liquid film is subjected to heat treatment to obtain the metal oxide layer modified by the liquid film.

[0109] Specifically, the oxygen vacancies in the metal oxide layer undergo redox reactions under long-term contact or at higher temperatures to achieve defect passivation. In this embodiment, heat treatment can promote the reaction of the composite material with the underlying metal oxide layer to passivate the defects of the metal oxide layer, and repair the oxygen vacancies or other defects in the metal oxide layer, thereby improving the electrical or chemical stability of the metal oxide layer and improving the conductivity.

[0110] Furthermore, in the step of heat treating the liquid film, the heating temperature of the heat treatment is 25° C. to 230° C., and the heating time is 1 min to 180 min.

[0111] In some optional implementations of this embodiment, the heating temperature is any one of 25°C, 50°C, 80°C, 100°C, 130°C, 150°C, 180°C, 200°C, 230°C, etc., or a range between any two of them.

[0112] In some optional implementations of this embodiment, the heating time is any one of 1 min, 20 min, 40 min, 60 min, 80 min, 100 min, 120 min, 140 min, 160 min, 180 min, etc., or a range between any two of them.

[0113] In one embodiment, in the step of modifying the metal oxide layer with a liquid film, the liquid film forms an interface modification layer, referring to Figure 2 The film 10 includes a metal oxide layer 11 and an interface modification layer 12 which are arranged in sequence.

[0114] In another embodiment, in the step of modifying the metal oxide layer with the liquid film, the liquid film forms an interface modification layer, and the interface modification layer reacts with the metal oxide layer to form a passivation layer, referring to Figure 3 The film 10 comprises a metal oxide layer 11, a passivation layer 13 and an interface modification layer 12 arranged in sequence. In other embodiments, in the step of modifying the metal oxide layer with a liquid film, the liquid film is exhausted, referring to Figure 4 , the film 10 only includes the metal oxide layer 11. Under different heat treatment conditions, the passivation agent may have three situations, which are not limited in the present application.

[0115] Furthermore, the metal oxide includes at least one of molybdenum oxide, tungsten oxide, vanadium oxide, rhenium oxide, zinc oxide, nickel oxide, titanium oxide, tin oxide, and zirconium oxide.

[0116] Furthermore, the metal oxide is doped with a metal, and the metal is selected from at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium.

[0117] Furthermore, the metal oxide has a modified ligand, and the ligand is at least one of an acid, a thiol, an amine, a phosphine, a phospholipid, a phospholipid, a polyvinylpyridine, a fluoroborate, a fluorophosphate, a halogen, a mercapto alcohol, a betaine, and acetylacetone.

[0118] The embodiment of the present application further provides a film 10, and the film 10 is prepared by the film preparation method as described above.

[0119] In this embodiment, the reinforcing agent in the composite material acts as an oxygen vacancy defect passivating element, and the passivating agent combines with / adsorbs the reinforcing agent. Since the boiling point of the passivating agent is higher than that of the reinforcing agent, the reinforcing agent can be effectively maintained on the surface and inside of the metal oxide layer 11 to prevent the volatilization of the reinforcing agent, so that the reinforcing agent can effectively passivate the oxygen vacancies in the metal oxide layer 11. Therefore, by modifying the metal oxide layer 11 with the composite material, the electrical and chemical stability of the film 10 can be improved, and the conductivity can be improved.

[0120] like Figure 2 As shown, in one embodiment, the film 10 includes a metal oxide layer 11 and an interface modification layer 12 which are arranged in sequence.

[0121] like Figure 3 As shown, in another embodiment, the film 10 includes a metal oxide layer 11, a passivation layer 13 and an interface modification layer 12 which are arranged in sequence.

[0122] like Figure 4 As shown, in other embodiments, the film 10 only includes the metal oxide layer 11 .

[0123] Furthermore, the thickness of the metal oxide layer 11 is 0.1 nm to 100 nm.

[0124] In some optional implementations of this embodiment, the thickness of the metal oxide layer 11 is any one of 0.1 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, etc., or a range between any two of them.

[0125] Furthermore, the thickness of the interface modification layer 12 is 0.1 nm to 50 nm.

[0126] In some optional implementations of this embodiment, the thickness of the interface modification layer 12 is any one of 0.1 nm, 5 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, etc., or in the range between any two thereof.

[0127] Furthermore, the thickness of the passivation layer 13 is 0.1 nm to 100 nm.

[0128] In some optional implementations of this embodiment, the thickness of the passivation layer 13 is any one of 0.1 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, etc., or a range between any two of them.

[0129] The above scheme is further described below in conjunction with specific implementation examples. The preferred embodiments of the present invention are described in detail as follows:

[0130] Embodiment 1:

[0131] S01: First, a clean substrate coated with patterned Ag (100 nm) is placed in acetone, washing liquid, deionized water and isopropanol for ultrasonic cleaning in sequence, and each step of the ultrasonic cleaning needs to last for about 15 minutes. After the ultrasonic cleaning is completed, the Ag substrate is placed in a clean oven for drying.

[0132] S02: Then, a metal oxide layer MoO3 with a thickness of 30 nm is deposited on the Ag substrate treated in the previous step, which is used as a hole transport layer or a hole injection layer. The composite material is then spin-coated on the metal oxide layer and placed on a heating table at 100°C for 10 minutes. The passivator in the composite material is selected from glycerol, the enhancer is selected from water, and the solvent is selected from alcohol, and the molar ratio of glycerol: water: alcohol is 1:1:1000.

[0133] S03: Finally, the wafer after depositing each functional layer is placed in a vapor deposition chamber and a 100nm silver layer is thermally evaporated through a mask plate as a cathode, and the device is prepared.

[0134] Embodiment 2:

[0135] The difference from Example 1 is that in the composite material, the passivator is selected from glycerol, the reinforcing agent is selected from water, the solvent is selected from alcohol, and the molar ratio of glycerol: water: alcohol is 1:3:1000.

[0136] Embodiment 3:

[0137] The difference from Example 1 is that in the composite material, the passivator is selected from glycerol, the enhancer is selected from benzoic acid, the solvent is selected from alcohol, and the molar ratio of glycerol:benzoic acid:alcohol is 1:3:1000.

[0138] Embodiment 4:

[0139] The difference from Example 1 is that in the composite material, the passivator is selected from acetic acid glycerol, the reinforcing agent is selected from benzoic acid, the solvent is selected from butanol, and the molar ratio of acetic acid glycerol:benzoic acid:butanol is 2:3:800.

[0140] Comparative Example 1:

[0141] The difference from Example 1 is that in step S02 , the composite material is not spin-coated on the metal oxide layer.

[0142] Experimental test analysis: The JV relationship of the device was tested by IVL test equipment, and the mobility of the device was obtained based on the fitting results of the SCLC region in the JV curve. The analysis results are shown in Table 1.

[0143] Table 1

[0144] Single hole device Hole mobility Example 1 <![CDATA[1.19×10 -3 cm 2 / V·S]]> Example 2 <![CDATA[1.23×10 -3 cm 2 / V·S]]> Example 3 <![CDATA[1.01×10 -3 cm 2 / V·S]]> Example 4 <![CDATA[1.11×10 -3 cm 2 / V·S]]> Comparative Example 1 <![CDATA[4.01×10 -4 cm 2 / V·S]]>

[0145] As can be seen from Table 1 and Table 2, the hole mobility of the single hole device Example 1 modified with the composite material is significantly improved compared with the single hole device Comparative Example 1 which is not modified, indicating that the defects inside the film are significantly reduced, and the reduction of the defect state density is conducive to reducing the quenching of the defects on the carriers, thereby improving the charge mobility;

[0146] After adjusting the molar ratio of the passivator, enhancer and solvent in the composite material, and adjusting the selection of the passivator, enhancer and solvent in the composite material, the hole mobility of Examples 2 to 4 is still significantly improved compared to the unmodified single hole device Example 1.

[0147] The present application also provides a photoelectric device, such as Figure 5 to Figure 6 As shown, the optoelectronic device includes a thin film prepared by the thin film preparation method as described above, or the thin film 10 as described above.

[0148] In this embodiment, the reinforcer in the composite material acts as an oxygen vacancy defect passivating element, and the passivator combines with / adsorbs the reinforcer. Since the boiling point of the passivator is higher than that of the reinforcer, the reinforcer can be effectively maintained on the surface and inside of the metal oxide layer 11 to prevent the volatilization of the reinforcer, so that the reinforcer can effectively passivate the oxygen vacancies in the metal oxide layer 11. Therefore, by modifying the metal oxide layer 11 with the composite material, the electrical and chemical stability of the film 10 can be improved, the conductivity can be improved, and the performance of the optoelectronic device can be improved.

[0149] Further, the number of the thin film 10 is one, and the metal oxide layer 11 of the thin film 10 is used as a hole functional layer;

[0150] Alternatively, the number of the thin films 10 is two, and the metal oxide layers 11 of the two thin films 10 are used as a hole functional layer and an electron functional layer, respectively.

[0151] Specifically, the photoelectric device includes a first electrode 20, a second electrode 30, a light-emitting layer 40 and a thin film 10, wherein the light-emitting layer 40 is disposed between the first electrode 20 and the second electrode 30; Figure 5 As shown, the film 10 is disposed between the first electrode 20 and the light-emitting layer 40; or Figure 6 As shown, the thin film 10 is disposed between the first electrode 20 and the light-emitting layer 40 and between the second electrode 30 and the light-emitting layer 40 .

[0152] Furthermore, in the thin film 10 disposed between the first electrode 20 and the light-emitting layer 40, the metal oxide layer 11 is a hole functional layer; in the thin film 10 disposed between the second electrode 30 and the light-emitting layer 40, the metal oxide layer 11 is an electron functional layer.

[0153] Further, the hole functional layer is a hole injection layer and / or a hole transport layer. When the hole functional layer includes a hole injection layer and a hole transport layer, the hole injection layer is arranged adjacent to the first electrode 20, and the hole transport layer is arranged adjacent to the light-emitting layer 40; the materials of the hole injection layer and the hole transport layer are independently selected from at least one of TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, T·APC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N phenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tinides, doped graphene, undoped graphene and C60.

[0154] Furthermore, when the hole functional layer is a hole injection layer, the thickness is 0.1 nm to 100 nm.

[0155] In some optional implementations of this embodiment, when the hole functional layer is a hole injection layer, the thickness is any one of 0.1nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, etc., or in the range between any two of them.

[0156] Furthermore, when the hole functional layer is a hole transport layer, the thickness is 1 nm to 500 nm.

[0157] In some optional implementations of this embodiment, when the hole functional layer is a hole transport layer, the thickness is any one of 0.1 nm, 50 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, etc., or in the range between any two of them.

[0158] Furthermore, when the electronic functional layer includes an electron injection layer and an electron transport layer, the electron injection layer is arranged adjacent to the second electrode 30, and the electron transport layer is arranged adjacent to the light-emitting layer 40; the materials of the electron transport layer and the electron injection layer are independently selected from at least one of doped or undoped metal oxides and organic electron transport materials; the doped or undoped metal oxide is selected from at least one of doped or undoped zinc oxide, tin oxide, titanium oxide, and zirconium oxide, and the doped elements include at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium.

[0159] Furthermore, when the electronic functional layer is an electron transport layer, the thickness is 0.1 nm to 100 nm.

[0160] In some optional implementations of this embodiment, when the electronic functional layer is an electron transport layer, the thickness is any one of 0.1nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, etc., or in the range between any two of them.

[0161] Furthermore, when the electronic functional layer is an electron injection layer, the thickness is 1 nm to 500 nm.

[0162] In some optional implementations of this embodiment, when the electronic functional layer is an electron injection layer, the thickness is any one of 0.1 nm, 50 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, etc., or in the range between any two of them.

[0163] Furthermore, the thickness of the first electrode 20 is 1 nm to 1000 nm.

[0164] In some optional implementations of this embodiment, the thickness of the first electrode 20 is any one of 1 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, etc., or a range between any two of them.

[0165] Furthermore, the thickness of the second electrode 30 is 1 nm to 1000 nm.

[0166] In some optional implementations of this embodiment, the thickness of the second electrode 30 is any one of 1 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, etc., or a range between any two of them.

[0167] Furthermore, the light emitting layer 40 has a thickness of 1 nm to 500 nm.

[0168] In some optional implementations of this embodiment, the thickness of the light-emitting layer 40 is any one of 1 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, etc., or in a range between any two of them.

[0169] Further, the first electrode 20 and the second electrode 30 are each selected from one or more of a metal electrode, a silicon-carbon electrode, a doped or undoped metal oxide electrode and a composite electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca and Mg; the material of the silicon-carbon electrode is selected from at least one of silicon, graphite, carbon nanotubes, graphene and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO; the material of the composite electrode is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO 2 / Ag / TiO 2 、TiO2 / Al / TiO 2 , ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO 2 / Ag / TiO 2 and TiO 2 / Al / TiO 2 At least one of .

[0170] Further, the light-emitting layer 40 is a quantum dot light-emitting layer or an organic light-emitting layer; the material of the quantum dot light-emitting layer includes at least one of a single structure quantum dot and a core-shell structure quantum dot, and the material of the single structure quantum dot is selected from at least one of a II-VI group compound, a IV-VI group compound, a III-V group compound and a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdST e, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound is selected from SnS, SnSe, At least one of SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb , AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs or InAlPSb, wherein the I-III-VI group compound is selected from CuInS 2 、CuInSe 2 AgInS 2at least one of the above-mentioned single-structure quantum dots; the core of the quantum dots of the core-shell structure includes any one of the above-mentioned single-structure quantum dots, and the shell material of the quantum dots of the core-shell structure includes at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, ZnS and the above-mentioned single-structure quantum dots; the material of the organic light-emitting layer includes at least one of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine-C2,N)iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine-C2,N)iridium, diaromatic anthracene derivatives, distyrene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials and DBP fluorescent materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives.

[0171] The above scheme is further described below in conjunction with specific implementation examples. The preferred embodiments of the present invention are described in detail as follows:

[0172] Embodiment 5:

[0173] S01: First, the patterned ITO substrate is placed in acetone, washing liquid, deionized water and isopropanol for ultrasonic cleaning in order, and each step of the ultrasonic cleaning needs to last for about 15 minutes. After the ultrasonic cleaning is completed, the ITO substrate is placed in a clean oven for drying.

[0174] S02: After the ITO substrate is dried, the surface of the ITO substrate is treated with ultraviolet-ozone for 5 minutes to further remove organic matter attached to the surface of the ITO substrate to improve the work function of the ITO substrate.

[0175] S03: Then, a metal oxide layer MoO3 is deposited on the ITO substrate treated in the previous step by vacuum evaporation. The thickness of this layer is 10nm and it is used as a hole injection layer. Then, the composite material is spin-coated on the metal oxide layer and placed on a heating table at 100°C for 10 minutes. In the composite material, the passivator is selected from glycerol, the enhancer is selected from water, and the solvent is selected from alcohol. The molar ratio of glycerol: water: alcohol is 1:1:1000.

[0176] S04: Next, a layer of hole transport layer material TFB is deposited on the substrate. The thickness of the layer is 30 nm. The substrate is placed on a heating platform at 150° C. and heated for 30 minutes to remove the solvent.

[0177] S05: Spin-coat 40 mg / ml of quantum dot solution on the hole transport layer, and then anneal it on a hot plate at 100° C. for 15 min. The thickness of the quantum dot light-emitting layer is about 20 nm.

[0178] S06: Subsequently, a metal oxide layer ZnO with a thickness of 30 nm is deposited on the above quantum dot layer to serve as an electron transport layer.

[0179] S07: Finally, the wafer after depositing each functional layer is placed in a vapor deposition chamber and a 100nm silver layer is thermally evaporated through a mask plate as a cathode, and the device is completed.

[0180] Embodiment 6:

[0181] The difference from Example 5 is that in S06, the composite material is further spin-coated on the metal oxide layer and placed on a heating table at 100° C. for 10 minutes. The passivating agent in the composite material is selected from glycerol, the reinforcing agent is selected from water, and the solvent is selected from alcohol, and the molar ratio of glycerol: water: alcohol is 1:1:1000.

[0182] Embodiment 7:

[0183] The difference from Example 5 is that in step S03, the enhancer is selected from benzoic acid, and the chemical formula of the benzoic acid is

[0184] Embodiment 8:

[0185] The difference from Example 6 is that in steps S03 and S06, the enhancer is selected from benzoic acid, and the chemical formula of the benzoic acid is

[0186] Embodiment 9:

[0187] The difference from Example 5 is that in step S03, the passivating agent is selected from acetic acid glycerol, and the chemical formula of the acetic acid glycerol is

[0188] Embodiment 10:

[0189] The difference from Example 6 is that in steps S03 and S06, the passivating agent is selected from triacetin, and the chemical formula of triacetin is

[0190] Embodiment 11:

[0191] The difference from Example 5 is that in step S03, the passivating agent is selected from glycerol acetal, and the chemical formula of the glycerol acetal is

[0192] Embodiment 12:

[0193] The difference from Example 6 is that in steps S03 and S06, the passivating agent is selected from glycerol acetal, and the chemical formula of the glycerol acetal is

[0194] Comparative Example 3:

[0195] The difference from Example 5 is that in step S03 , the composite material is not spin-coated on the metal oxide layer.

[0196] Experimental test analysis: The maximum current efficiency (CEmax) test was performed on the light-emitting devices prepared in Examples 5 to 12 and Comparative Example 3 using an IV-L test system; and the T95 life (T95@1000nit) test was performed on the light-emitting devices prepared in Examples 5 to 12 and Comparative Example 3 using a life test system at a luminous brightness of 1000nit. The analysis results are shown in Table 2.

[0197] Table 2

[0198] CEmax(cd / A) T95@1000nit(h) Example 5 15.7 129 Example 6 18.1 148 Example 7 16.0 134 Example 8 18.8 156 Example 9 15.5 122 Example 10 18.0 144 Embodiment 11 15.3 121 Example 12 17.8 140 Comparative Example 3 12.6 91

[0199] It can be seen from Example 5 and Comparative Example 3 in Table 2 that when the metal oxide layer MoO3 is used as a hole injection layer, a composite material is arranged on the metal oxide layer, and the metal oxide layer is modified by the composite material, and the current efficiency and life of Example 5 are significantly better than those of Comparative Example 3 in which the composite material is not arranged on the metal oxide layer; and after modifying the passivator or enhancer, the current efficiency and life of Examples 7, 9, and 11 are significantly better than those of Comparative Example 3.

[0200] This shows that the reinforcing agent in the composite material acts as a passivating element for oxygen vacancy defects. The passivating agent combines with / adsorbs the reinforcing agent. Since the boiling point of the passivating agent is higher than that of the reinforcing agent, the reinforcing agent can be effectively maintained on the surface and inside of the metal oxide layer to prevent the volatilization of the reinforcing agent, so that the reinforcing agent can effectively passivate the oxygen vacancies in the metal oxide layer. Therefore, by modifying the metal oxide layer through the composite material, the electrical and chemical stability of the film can be improved, the conductivity can be improved, and the performance of the optoelectronic device can be improved.

[0201] The difference between Examples 6, 8, 10 and 12 and Examples 5, 7, 9 and 11 is that a composite material is further provided on the metal oxide layer in step S06, so as to further improve the current efficiency and life of the light-emitting device.

[0202] An embodiment of the present application further provides a display device, wherein the display device includes the film as described above, or includes the optoelectronic device as described above.

[0203] In this embodiment, the reinforcer in the composite material acts as an oxygen vacancy defect passivating element, and the passivator combines with / adsorbs the reinforcer. Since the boiling point of the passivator is higher than that of the reinforcer, the reinforcer can be effectively maintained on the surface and inside of the metal oxide layer to prevent the volatilization of the reinforcer, so that the reinforcer can effectively passivate the oxygen vacancies in the metal oxide layer. Therefore, by modifying the metal oxide layer with the composite material, the electrical and chemical stability of the film can be improved, the conductivity can be improved, and the performance of the optoelectronic device can be improved.

[0204] Obviously, the embodiments described above are only some embodiments of the present application, rather than all embodiments. The preferred embodiments of the present application are given in the accompanying drawings, but they do not limit the patent scope of the present application. The present application can be implemented in many different forms. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive. Although the present application is described in detail with reference to the aforementioned embodiments, for those skilled in the art, it is still possible to modify the technical solutions recorded in the aforementioned specific implementation methods, or to perform equivalent replacement of some of the technical features therein. Any equivalent structure made using the contents of the specification and drawings of this application, directly or indirectly used in other related technical fields, is similarly within the scope of patent protection of this application.

Claims

1. A composite material, characterized in that: include: An enhancer, a passivator and a solvent, wherein the enhancer and the passivator are dispersed in the solvent, and the boiling point of the passivator is higher than that of the enhancer; The enhancer contains at least one of a hydroxyl group, a thiol group, a carboxyl group, an amine group, an amide group, and an aldehyde group; The passivating agent is glycerol or a glycerol derivative.

2. The composite material according to claim 1, characterized in that The enhancer is a polar solvent; and / or The boiling point of the passivating agent is higher than 250°C; and / or The deactivator has a higher boiling point than the solvent; and / or The molar ratio of the passivator to the enhancer is (1:0.01) to (1:100); and / or The molar ratio of the passivating agent to the solvent is (1:20) to (1:5000); and / or The molar ratio of the enhancer to the solvent is (1:20) to (1:5000).

3. The composite material according to claim 1, characterized in that The polarity of the enhancer is greater than 4; and / or The glycerol derivative is selected from at least one of formulas Ⅰ, Ⅱ, Ⅲ, Ⅳ, and Ⅴ: Among them, R 1 , R 2 , R 3 Each independently selected from a hydrogen atom, a C1-C6 hydrocarbon group, a halogen atom, a hydroxyl group, R 8 COO-, C1-C6 alkoxy, R 8 is selected from a C1-C6 hydrocarbon group, R 1 , R 2 , R 3 At least one of them is selected from hydroxyl groups and not all of them are hydroxyl groups; Among them, R 4 , R 5 Each is independently selected from a hydrogen atom, a halogen atom, a cyano group, a hydroxyl group, a carboxyl group, an aldehyde group, a nitro group, a C1-C6 hydrocarbon group, R 9 COO-, R 9 A hydrocarbon group selected from C1-C6; Among them, R 6 , R 7 Each is independently selected from a hydrogen atom, a halogen atom, a cyano group, a hydroxyl group, a carboxyl group, an aldehyde group, a nitro group, a C1-C6 hydrocarbon group, R 10 COO-, R 10 A hydrocarbon group selected from C1-C6.

4. The composite material according to claim 1, characterized in that The glycerol derivative includes at least one of glycerol ester, glycerol carbonate, glycerol ether, glycerol acetal, and glycerol ketal; and / or, the enhancer comprises at least one of water, methanol, ethanol, pyridine, glycerol, ethyl nitrate, propyl sulfate, N,N-dimethylformamide, N,N-dimethylformamide, formic acid, acetic acid, propionic acid, acrylic acid, mercaptan, N-methylthioamide, ethyl thiocyanate, ethyl thiocyanate, acetic acid, propionic acid, benzoic acid, fluoroacetic acid, lactic acid, malic acid, fumaric acid, maleic acid, stearic acid, ethanolamine, isopropylamine, propylamine, ethylamine, methylamine, aniline, dimethylamine, trimethylamine, ethylenediamine, ammonia, N,N-dimethylacetamide, N-methylacetanilide, N,N-dimethylformamide, N-methylacetamide, N-methylformamide, adipic acid, acetamide, formamide, lauryl aldehyde, nonanal, octanal, heptaldehyde, hexanal, valeraldehyde, butyraldehyde, propionaldehyde, acetaldehyde, and formaldehyde; and / or The solvent is selected from at least one of acetonitrile, methanol, ethanol, propanol, butanol, pentanol, hexanol, heptanol, octanol, nonanol, decanol, ethylene glycol, propylene glycol, butylene glycol, pentanediol, hexanediol, heptanediol, octanol, nonanediol, decanol, pyridine, tetrahydrofuran, dimethylformamide, dimethylacetamide, ethyl acetate, butyl acetate, acetyl chloride, acetone, methyl isobutyl ketone, methyl methacrylate, anisole, dimethyl sulfoxide, N-methylpyrrolidine, N,N-dimethylacetamide, N-methylpropionamide, N,N-dimethylformamide, tetramethylethylenediamine, N-methylaniline, benzophenone, ethyl phenyl ether, isopropylbenzene, acetophenone, ethyl methyl ketone, n-butylamine, diethylamine, n-propylamine, dipropylamine, triethylamine, tributylamine, and diphenylamine.

5. A method for preparing a thin film, characterized in that: The following steps are involved: providing a substrate, and preparing a metal oxide layer on the substrate; Arranging a composite material on the metal oxide layer, and modifying the metal oxide layer with the composite material to obtain a thin film; Wherein, the composite material is selected from the composite material described in any one of claims 1 to 4.

6. The method for preparing a thin film according to claim 5, characterized in that: The step of providing a composite material on the metal oxide layer and modifying the metal oxide layer with the composite material to obtain a thin film specifically comprises: placing the composite material on the metal oxide layer to obtain a liquid film; The liquid film is subjected to heat treatment to obtain the metal oxide layer modified by the liquid film.

7. The method for preparing a thin film according to claim 6, characterized in that: In the step of heat treating the liquid film, the heating temperature of the heat treatment is 25° C. to 230° C. and the heating time is 1 min to 180 min; and / or In the step of modifying the metal oxide layer with the liquid film, the liquid film forms an interface modification layer; or, in the step of modifying the metal oxide layer with the liquid film, the liquid film forms an interface modification layer, and a passivation layer is formed between the interface modification layer and the metal oxide layer; or, in the step of modifying the metal oxide layer with the liquid film, the liquid film is exhausted; And / or, the metal oxide includes at least one of molybdenum oxide, tungsten oxide, vanadium oxide, rhenium oxide, zinc oxide, nickel oxide, titanium oxide, tin oxide, and zirconium oxide; and / or, the metal oxide is doped with a metal, the metal being selected from at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium and gadolinium; And / or, the metal oxide has a modified ligand, and the ligand is at least one of an acid, a thiol, an amine, a phosphine, a phospholipid, a phospholipid, a polyvinylpyridine, a fluoroborate, a fluorophosphate, a halogen, a mercapto alcohol, a betaine, and acetylacetone.

8. A film, characterized in that: The film is prepared by the film preparation method according to any one of claims 5 to 7.

9. A photoelectric device, characterized in that: The optoelectronic device comprises a thin film prepared by the method for preparing a thin film according to any one of claims 5 to 7, or a thin film according to claim 8.

10. The optoelectronic device according to claim 9, characterized in that: The number of the thin film is one, and the metal oxide layer of the thin film is used as a hole functional layer; Alternatively, the number of the thin films is two, and the metal oxide layers of the two thin films serve as a hole functional layer and an electron functional layer, respectively.

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