Wafer damage testing device and testing method

Abstract

The invention discloses a wafer damage testing device and method, and relates to the technical field of wafer detection, and the method comprises the following steps: S1, device preparation and wafer fixation; s2, starting rotation and ultrasonic synchronous detection; s3, multi-angle data acquisition; s4, signal processing; s5, generating an automatic report; and S6, process matching. Through the meshing block, the placing tray, the fixing column and the meshing wheel, the wafer silicon wafer body is driven to rotate by one circle, the effect that the surface of the wafer silicon wafer body is comprehensively detected through the signal generating device is achieved when the wafer silicon wafer body rotates by one circle, and it is ensured that an ultrasonic probe scans the surface of the wafer silicon wafer body from all angles through rotation movement; and a blind area caused by single-direction detection is avoided.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer silicon chip detection, and in particular to a wafer damage testing device and a wafer damage testing method. Background Art

[0002] In the precise and competitive industry of silicon wafer processing, the damaged layer on the surface of silicon wafer undoubtedly plays a pivotal role and has a profound impact on processing costs and processes. The existence of the damaged layer is not only directly related to the time, material and energy consumption required in the processing process, but also further affects the quality and performance of the final product. Therefore, accurately identifying and effectively treating the damaged layer on the surface of silicon wafers is of vital importance to improving product yield, reducing processing costs and enhancing the market competitiveness of enterprises.

[0003] In existing damage testing devices, since most of the existing detection devices use destructive sampling tests, some do not consider the damage layer and rely on inference for process matching. This will not only cause a waste of costs, but also a relatively long process construction cycle. Destructive testing cannot represent the overall level, and there will also be deviations in the judgment of the damage layer. The processing of native wafers is relatively not that complicated, and the overall damage layer is relatively uniform. However, the differences between different batches will also cause trouble for process matching. Moreover, destructive testing requires cutting or damaging wafer samples, which will cause high-value materials to be directly scrapped.

[0004] There are related invention patents related to wafer damage testing, as follows: Chinese patent application number: CN202110506336.5, the name of the invention patent is: Detection method and detection system for wafer surface damage, the invention includes: providing a wafer, the surface of the wafer has a stacked structure of metal dielectric layers; measuring the first flat band voltage on the surface of the wafer; performing a process on the wafer from the other surface of the wafer; measuring the second flat band voltage on the surface of the wafer; and determining the wafer surface damage within a preset range around the stacked structure of the metal dielectric layer according to the first flat band voltage and the second flat band voltage. The present invention can improve the efficiency and accuracy of damage detection.

[0005] However, although the above existing patents can improve the efficiency and accuracy of damage detection, during the detection process, the wafer cannot be rotated but can only be translated. There may be some tiny damage or defects in certain directions on the surface of the wafer, which may be difficult to be fully captured during the translation detection process. This is because the translation detection can only cover the straight line track on the surface of the wafer, and cannot perform a comprehensive, multi-angle scan of the wafer. Summary of the invention

[0006] The purpose of the present application is to provide a wafer damage testing device and a testing method, which are used to solve the problem that rotation detection cannot be performed in existing measuring devices.

[0007] The present invention focuses on constructing a new testing mechanism, through which the damaged layer on the surface of the silicon wafer can be accurately identified, so as to match the ideal processing technology for each silicon wafer, reduce cost waste, and improve production efficiency. The constructed mechanism can be used as an independent testing mechanism or integrated with other equipment to build a complete processing system through data matching.

[0008] In order to achieve the above object, the present invention adopts the following technical solutions: A wafer damage testing device includes a wafer silicon wafer body, a placing tray is arranged at the bottom end of the wafer silicon wafer body, and the placing trays are arranged in a plurality, and the bottoms of the plurality of placing trays are fixedly connected with fixing columns, and the outer surfaces of the fixing columns are fixedly connected with meshing wheels, and the sides of the meshing wheels are meshed with meshing blocks, and the meshing blocks and the meshing wheels are used to drive the wafer silicon wafer body to rotate 360 ​​degrees. Thus, the wafer silicon wafer body can be scanned in all directions and at multiple angles.

[0009] As a further improvement of the present invention, the side of the meshing block away from the meshing wheel is fixedly connected with a shielding plate, the bottom end of the bottom plate is fixedly connected with the bottom plate, the middle part of the top of the bottom plate is provided with a moving groove, the middle part of the top of the shielding plate is fixedly connected with a light-transmitting glass, the inside of the shielding plate is provided with a light-blocking cloth, the bottom end of the shielding plate is provided with a winding groove, and the center of the winding groove is fixedly connected with a through rod. Therefore, the fixed meshing block can drive the wafer silicon wafer body to rotate, thereby achieving the effect of detecting the wafer silicon wafer body.

[0010] As a further improvement of the present invention, the outside of the through rod is fixedly connected with a clockwork spring, the bottom end of the light-blocking cloth is fixedly connected with the top end of the clockwork spring, the bottom end of the light-blocking cloth is fixedly connected with a pulling block, the outside of the pulling block is provided with a clamping hole, the inside of the clamping hole is movably connected with a fixed bayonet, the end of the fixed bayonet away from the clamping hole is fixedly connected with a rotating ring, the inside of the rotating ring is rotatably connected with a protruding block, and the top of the protruding block is respectively fixedly connected to the bottom surface of the top of the three shielding plates. This ensures that when the light on the top of the silicon wafer body affects the detection of the signal generating device, the light on the top of the silicon wafer body is shielded.

[0011] As a further improvement of the present invention, the interior of the movable groove is movably connected with a transmission mechanism, the interior of the transmission mechanism is provided with a plurality of rotating grooves, the interiors of the plurality of rotating grooves are rotatably connected with rotating blocks, the bottom ends of the rotating blocks are all wound and fixedly connected with elastic ropes, the other ends of the elastic ropes are respectively fixedly connected to the interiors of the corresponding rotating grooves, and the top ends of the plurality of rotating blocks are respectively fixedly connected to the bottom ends of a plurality of fixed columns. Thus, it is ensured that the silicon wafer body can rotate.

[0012] As a further improvement of the present invention, a plurality of fixed rods are fixedly connected to the side of the bottom plate away from the engagement block, a series rod is fixedly connected to the top of two of the fixed rods, two connecting rods are symmetrically connected to the side of the series rods close to the shielding plate, and the ends of the two connecting rods away from the series rods are respectively fixedly connected to a detection rod 1 and a detection rod 2, and the bottom end of the detection rod 1 is fixedly connected to a signal generating device. Thus, the surface damage of the silicon wafer body can be detected and the signal can be processed.

[0013] As a further improvement of the present invention, the bottom end of the second detection rod is fixedly connected with a signal receiving device, the side of the series rod away from the connecting rod is fixedly connected with a second connection line, the end of the second connection line away from the series rod is fixedly connected with a signal processing unit, the top of the signal processing unit is fixedly connected with an alarm system, the side of the signal processing unit away from the second connection line is fixedly connected with a first connection line, and the end of the first connection line away from the signal processing unit is provided with a computer processing system. Thus, the damage of the silicon wafer body can be intuitively displayed.

[0014] A wafer damage testing method, specifically comprising: S1, device preparation and wafer fixing: after the wafer silicon body is made, it is arranged in sequence and placed on the top of the tray; S2, start the rotation and ultrasonic synchronous detection: after the transmission mechanism is started, the placement tray is driven to make the engaging block and the fixed column contact, at this time, the wafer body is driven to rotate, and the detection is performed after the wafer body moves to the bottom of the signal generating device; S3, multi-angle data acquisition: the computer software stores the reflected signal in segments according to the rotation angle, and uses an algorithm to filter the noise to extract the effective signal; S4, signal processing: Calculate the thickness and position of the damaged layer based on the time difference and amplitude change of the reflected wave, and integrate the data from all angles to generate a three-dimensional distribution map of the damaged layer on the surface of the silicon wafer body; S5, automatic report generation: the system automatically generates a test report and marks the depth, area and distribution characteristics of the damaged layer on the display; S6, process matching: Link with the back-end processing equipment, push damage data, and automatically adjust process parameters according to damage distribution through processing equipment.

[0015] As a further improvement of the present invention, in the steps S1-S2, the placement tray adopts vacuum adsorption or electrostatic fixation technology, the vacuum adsorption or electrostatic fixation technology is used to ensure that the silicon wafer body does not deviate during the rotation process, the length of the signal generating device is greater than the radius of the silicon wafer body, the signal generating device monitors the position of the silicon wafer body in real time, and the detection is triggered when the silicon wafer body moves to the bottom of the signal generating device. In this way, the silicon wafer body can be fully detected, and it can be ensured that the silicon wafer body will not be in danger of flying out during the rotation process.

[0016] As a further improvement of the present invention, in the steps S3-S4, the computer software stores the reflected signal in real time at each 0.5° segmented rotation angle, the algorithm uses a wavelet transform algorithm to filter high-frequency noise and retain the effective signal frequency band, and the three-dimensional distribution map is a three-dimensional damage distribution map of the wafer surface generated by a point cloud reconstruction algorithm. This makes it convenient for operators to intuitively observe the damage of the wafer body.

[0017] Compared with the prior art, the present invention has the following beneficial effects: The present invention drives the wafer body to move along the moving groove through the transmission mechanism through the engagement block, the placement tray, the fixed column and the engagement wheel. After the engagement wheel is engaged with the engagement block, when the wafer body continues to move forward, the engagement of the engagement block and the engagement wheel will drive the wafer body to rotate. When the engagement block contacts the engagement wheel, the signal generating device will just contact the initial end of the wafer body. When the wafer body rotates, the wafer body also moves under the drive of the transmission mechanism. Since the length of the engagement block is exactly the same as the diameter of the engagement wheel, the wafer body will be driven to rotate one circle. The wafer body rotates one circle to achieve the effect of comprehensive detection of its surface through the signal generating device. The rotational motion ensures that the ultrasonic probe scans the surface of the wafer body from all angles to avoid blind spots caused by single-direction detection. It is ensured that surface cracks or internal defects are more easily detected at a specific angle, and the combination of rotation and linear motion can cover the entire surface of the wafer body circle by circle to ensure that there is no missing area. The coordinated design of rotation and linear motion can reduce the probe reset time and greatly improve the detection efficiency compared to traditional grid scanning. The crystal structure of the silicon wafer body is directional, and rotation detection can evaluate the sound wave propagation characteristics of different crystal directions and identify microscopic defects such as lattice distortion.

[0018] The present invention uses an engagement block, a moving groove and a transmission mechanism, and the transmission mechanism continuously moves along the moving groove, so that the same engagement wheel can contact different engagement blocks, thereby detecting the surface of the wafer body of the silicon wafer multiple times, thereby obtaining multi-dimensional data through multiple scans at different angles, and using algorithm fusion to improve the accuracy of defect recognition. As a result, the signals of tiny bubbles are easier to capture under multiple detection paths. In addition, repeated scanning of the same area can reduce random noise through data averaging and enhance the signal-to-noise ratio of weak defect signals, which is particularly important for nano-level defect detection. Multiple detections generate time series data, which can trace the stage of defect generation. In addition, through multiple analysis and rotation detection results of big data, a defect density distribution model can be established, and manufacturing parameters can be optimized to improve the yield.

[0019] The present invention uses a light-blocking cloth, a spring, a pulling block and a protruding block. When external light affects the detection of the signal generating device, the operator uses the pulling block to make the light-blocking cloth block the light of the light-transmitting glass, and then fixes the fixing hole by fixing the fixing pin, so that the light-blocking cloth can be fixed to the bottom end of the light-transmitting glass, thereby blocking the light passing through the light-transmitting glass. Therefore, when detecting the damage of the wafer silicon chip body, the light that may be encountered is prevented from affecting the detection structure. When detecting minor damage, the light may cause misjudgment or missed judgment. By preventing light interference, the detected signal can be ensured to be purer, thereby improving the detection accuracy. Moreover, by eliminating light interference, the stability and reliability of the detection result can be ensured, providing an accurate basis for subsequent repair or processing. Light interference can also cause the detection process to require a longer time or more repeated detections to confirm the results, thereby reducing the detection efficiency. By preventing light interference, unnecessary detection times and time can be reduced, thereby improving the detection efficiency. Accurate detection results help to timely discover and deal with damage on the wafer silicon chip body, thereby ensuring the quality of the final product. Preventing light interference can improve detection accuracy and thus improve the product quality of the entire wafer silicon wafer production line.

[0020] Through the detection rod 1, the detection rod 2, the signal generating device and the signal receiving device, since the length of the signal generating device is greater than the radius of the wafer silicon wafer body, when the wafer silicon wafer body is detected, the effect of all-round detection can be achieved, and then the signal is transmitted to the signal receiving device through the signal generating device, and then the signal is transmitted to the computer processing system through the alarm system through the connecting line 2, so that the signal detected on the wafer silicon wafer body can be transmitted to the alarm system for processing, and the three-dimensional damage distribution map of the wafer surface generated by the point cloud reconstruction algorithm can be converted into a three-dimensional image, so that the detection personnel can intuitively observe the tiny flaws and damage on the surface of the wafer silicon wafer body, thereby improving the accuracy of detection. Moreover, the use of signal transmission and point cloud reconstruction algorithms can realize rapid scanning and automatic analysis of the surface of the wafer silicon wafer body, greatly improving the detection efficiency. The point cloud reconstruction algorithm can generate a three-dimensional damage distribution map of the wafer surface, covering the entire wafer surface, which means that the detection personnel can fully understand the damage of the wafer surface and avoid the problem of missed detection or false detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0022] Figure 1 It is a schematic diagram of the three-dimensional structure of the present invention.

[0023] Figure 2 It is a three-dimensional schematic diagram of the computer processing system, signal generating device and signal receiving device in the present invention.

[0024] Figure 3 It is a schematic diagram of the three-dimensional structure of the bottom plate and the transmission mechanism in the present invention.

[0025] Figure 4 It is a schematic diagram of the three-dimensional structure of the engaging block, the moving groove and the shielding plate in the present invention.

[0026] Figure 5 It is a schematic diagram of the three-dimensional structure of the transmission mechanism, the placement tray and the wafer silicon body in the present invention.

[0027] Figure 6 For the present invention Figure 3 Schematic diagram of the enlarged structure at point A in the middle.

[0028] Figure 7 It is a schematic diagram of the back cross-sectional structure of the shielding plate in the present invention.

[0029] Figure 8 It is a schematic diagram of the three-dimensional structure of the light-shielding cloth, the clockwork spring and the pulling block in the present invention.

[0030] Fig. 9 It is a schematic diagram of the cross-sectional structure of the transmission mechanism in the invention.

[0031] Fig.10 It is a schematic diagram of the three-dimensional structure in which the tray, meshing wheels and elastic rope are placed in the invention.

[0032] In the figure: 101, computer processing system; 102, connecting line 1; 103, signal processing unit; 104, alarm system; 105, connecting line 2; 106, detection rod 1; 107, detection rod 2; 108, signal generating device; 109, signal receiving device; 110, fixed rod; 111, series rod; 112, connecting rod; 201, bottom plate; 202, shielding plate; 203, meshing block; 204, moving groove; 20 5. Translucent glass; 206. Light-blocking cloth; 207. Winding groove; 208. Through rod; 209. Clockwork spring; 210. Pulling block; 211. Protruding block; 212. Rotating ring; 213. Fixing pin; 214. Fixing hole; 301. Transmission mechanism; 302. Placement tray; 303. Fixed column; 304. Engaging wheel; 305. Rotating block; 306. Elastic rope; 307. Rotating groove; 400. Wafer body. DETAILED DESCRIPTION

[0033] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0034] like Figure 3-8As shown, the present invention provides a technical solution: a wafer damage testing device, including a wafer silicon wafer body 400, a placing tray 302 is arranged at the bottom end of the wafer silicon wafer body 400, and a plurality of placing trays 302 are arranged, and the bottoms of the plurality of placing trays 302 are fixedly connected with fixed columns 303, and the outer surfaces of the fixed columns 303 are fixedly connected with meshing wheels 304, and the sides of the meshing wheels 304 are meshed with meshing blocks 203, and the meshing blocks 203 and the meshing wheels 304 are used to drive the wafer silicon wafer body 400 to rotate 360°. The side of the meshing block 203 away from the meshing wheel 304 is fixedly connected with a shielding plate 202, the bottom end of the bottom plate 201 is fixedly connected with the bottom plate 201, the middle part of the top of the bottom plate 201 is provided with a movable groove 204, and the middle part of the top of the shielding plate 202 is fixedly connected with a light-transmitting The glass 205 and the baffle plate 202 are both provided with light-blocking cloth 206 inside, and the inner bottom end of the baffle plate 202 is provided with a winding groove 207, and the inner center of the winding groove 207 is fixedly connected with a through rod 208, and the outer part of the through rod 208 is fixedly connected with a clockwork spring 209, the bottom end of the light-blocking cloth 206 is fixedly connected to the top end of the clockwork spring 209, and the bottom end of the light-blocking cloth 206 is fixedly connected with a pulling block 210, and the outer part of the pulling block 210 is provided with a fixing hole 214, and the inner part of the fixing hole 214 is movably connected with a fixed pin 213, and the end of the fixed pin 213 away from the fixing hole 214 is fixedly connected with a rotating ring 212, and the inner part of the rotating ring 212 is rotatably connected with a protruding block 211, and the top of the protruding block 211 is respectively fixedly connected to the top bottom surface of the three baffle plates 202. Therefore, when detecting damage to the wafer silicon chip body 400, possible light can be prevented from affecting the detection structure. Light may cause misjudgment or missed judgment when detecting tiny damage. By preventing light interference, the detected signal can be ensured to be purer, thereby improving the detection accuracy.

[0035] like Figure 5-10As shown, the interior of the moving groove 204 is movably connected with a transmission mechanism 301, and a plurality of rotating grooves 307 are provided inside the transmission mechanism 301. The interior of the plurality of rotating grooves 307 are all rotatably connected with a rotating block 305. The bottom end of the rotating block 305 is wrapped and fixedly connected with an elastic rope 306. The other end of the elastic rope 306 is respectively fixedly connected to the corresponding rotating groove 307. The tops of the plurality of rotating blocks 305 are respectively fixedly connected to the bottom ends of the plurality of fixed columns 303. This will drive the silicon wafer body 400 to rotate one circle. The silicon wafer body 400 rotates one circle to achieve the effect of fully detecting its surface through the signal generating device 108. The rotating motion ensures that the ultrasonic probe scans the surface of the silicon wafer body 400 from all angles to avoid blind spots caused by single-direction detection. It ensures that surface cracks or internal defects are more easily detected at a specific angle, and the combination of rotation and linear motion can cover the entire surface of the silicon wafer body 400 circle by circle to ensure that no area is missed.

[0036] like Figure 1-2 As shown, a plurality of fixed rods 110 are fixedly connected to the side of the bottom plate 201 away from the engaging block 203, a series rod 111 is fixedly connected to the top of the two fixed rods 110, two connecting rods 112 are symmetrically connected to the side of the series rod 111 close to the baffle plate 202, a detection rod 1 106 and a detection rod 2 107 are fixedly connected to the ends of the two connecting rods 112 away from the series rod 111, and a signal generating device 108 is fixedly connected to the bottom end of the detection rod 106. The bottom end of the second detection rod 107 is fixedly connected with a signal receiving device 109, the side of the series rod 111 away from the connecting rod 112 is fixedly connected with the second connection line 105, the end of the second connection line 105 away from the series rod 111 is fixedly connected to the signal processing unit 103, the top of the signal processing unit 103 is fixedly connected with the alarm system 104, the side of the signal processing unit 103 away from the second connection line 105 is fixedly connected with the first connection line 102, and the end of the first connection line 102 away from the signal processing unit 103 is provided with a computer processing system 101. The signal detected on the silicon wafer body 400 can be transmitted to the alarm system 104 for processing, and the three-dimensional damage distribution map of the wafer surface generated by the point cloud reconstruction algorithm can be converted into a three-dimensional image, so that the detection personnel can intuitively observe the tiny flaws and damages on the surface of the silicon wafer body 400, thereby improving the accuracy of the detection.

[0037] The present invention also provides a method for testing wafer damage, comprising the following steps: S1, device preparation and wafer fixing: after the wafer silicon body 400 is manufactured, it is sequentially arranged and placed on the top of the placement tray 302.

[0038] S2, start the rotation and ultrasonic synchronous detection: after the transmission mechanism 301 is started, it drives the placement tray 302 to make the engaging block 203 and the fixing column 303 contact, and at this time, it will drive the wafer silicon wafer body 400 to rotate, and after the wafer silicon wafer body 400 moves to the bottom end of the signal generating device 108, detection is performed.

[0039] In steps S1-S2, the tray 302 is placed using vacuum adsorption or electrostatic fixation technology, which is used to ensure that the silicon wafer body 400 does not deviate during rotation. The length of the signal generator 108 is greater than the radius of the silicon wafer body 400. The signal generator 108 monitors the position of the silicon wafer body 400 in real time, and the detection is triggered when the silicon wafer body 400 moves directly below the signal generator 108. In this way, the silicon wafer body 400 can be fully detected, and it can be ensured that the silicon wafer body 400 will not fly out during rotation.

[0040] S3, multi-angle data acquisition: The computer software stores the reflected signal in segments according to the rotation angle, and uses an algorithm to filter the noise to extract the effective signal.

[0041] S4, signal processing: according to the time difference and amplitude change of the reflected wave, the thickness and position of the damaged layer are calculated, and the data of all angles are integrated to generate a three-dimensional distribution map of the damaged layer on the surface of the wafer silicon wafer body 400.

[0042] In steps S3-S4, the computer software stores the reflected signal in real time at every 0.5° segmented rotation angle. The algorithm uses a wavelet transform algorithm to filter high-frequency noise and retain the effective signal frequency band. The three-dimensional distribution map is a three-dimensional damage distribution map of the wafer surface generated by a point cloud reconstruction algorithm. This makes it convenient for operators to intuitively observe the damage of the wafer silicon wafer body 400. When damage is detected on the surface of the wafer silicon wafer body 400, the signal is transmitted to the alarm system 104 through the signal processing unit 103, so that the operator is reminded in real time when the damaged wafer silicon wafer body 400 is reached.

[0043] S5, automatic report generation: the system automatically generates a test report and marks the depth, area and distribution characteristics of the damaged layer on the display.

[0044] S6, process matching: Link with the back-end processing equipment, push damage data, and automatically adjust process parameters according to damage distribution through processing equipment.

[0045] Finally, it should be noted that the above are only preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A wafer damage testing device, comprising a wafer silicon body (400), characterized in that: A placement tray (302) is provided at the bottom end of the wafer silicon wafer body (400), and a plurality of the placement trays (302) are provided. The bottoms of the plurality of placement trays (302) are fixedly connected to fixed columns (303), and the outer surfaces of the fixed columns (303) are fixedly connected to meshing wheels (304). The sides of the meshing wheels (304) are meshed with meshing blocks (203), and the meshing blocks (203) and the meshing wheels (304) are used to drive the wafer silicon wafer body (400) to rotate 360°.

2. A wafer damage testing device as claimed in claim 1, characterized in that: The side of the meshing block (203) away from the meshing wheel (304) is fixedly connected to a shielding plate (202); the bottom end of the bottom plate (201) is fixedly connected to the bottom plate (201); a moving groove (204) is provided in the middle of the top of the bottom plate (201); a light-transmitting glass (205) is fixedly connected to the middle of the top of the shielding plate (202); a light-blocking cloth (206) is provided inside the shielding plate (202); a winding groove (207) is provided at the bottom end of the shielding plate (202); and a through rod (208) is fixedly connected at the center of the winding groove (207).

3. A wafer damage testing device as claimed in claim 2, characterized in that: The outside of the through rod (208) is fixedly connected to a clockwork spring (209), the bottom end of the light-blocking cloth (206) is fixedly connected to the top end of the clockwork spring (209), the bottom end of the light-blocking cloth (206) is fixedly connected to a pulling block (210), the outside of the pulling block (210) is provided with a fixing hole (214), the inside of the fixing hole (214) is movably connected to a fixed locking pin (213), the end of the fixed locking pin (213) away from the fixing hole (214) is fixedly connected to a rotating ring (212), the inside of the rotating ring (212) is rotatably connected to a protruding block (211), and the top of the protruding block (211) is respectively fixedly connected to the bottom surface of the top end of the three shielding plates (202).

4. A wafer damage testing device as claimed in claim 2, characterized in that: The interior of the movable groove (204) is movably connected to a transmission mechanism (301), and a plurality of rotating grooves (307) are provided inside the transmission mechanism (301). The interiors of the plurality of rotating grooves (307) are rotatably connected to rotating blocks (305), and the bottom ends of the rotating blocks (305) are fixedly connected to elastic ropes (306) wound around the outsides, and the other ends of the elastic ropes (306) are respectively fixedly connected to the interiors of the corresponding rotating grooves (307), and the top ends of the plurality of rotating blocks (305) are respectively fixedly connected to the bottom ends of a plurality of fixed columns (303).

5. The wafer damage testing device according to claim 2, characterized in that: A plurality of fixed rods (110) are fixedly connected to a side of the bottom plate (201) away from the engagement block (203); a series rod (111) is fixedly connected to the top ends of two of the fixed rods (110); two connecting rods (112) are symmetrically connected to a side of the series rod (111) close to the shielding plate (202); a detection rod 1 (106) and a detection rod 2 (107) are fixedly connected to one end of the two connecting rods (112) away from the series rod (111), respectively; and a signal generating device (108) is fixedly connected to the bottom end of each of the detection rods (106).

6. A wafer damage testing device as claimed in claim 5, characterized in that: The bottom end of the second detection rod (107) is fixedly connected to a signal receiving device (109); the side of the series rod (111) away from the connecting rod (112) is fixedly connected to the second connecting wire (105); the end of the second connecting wire (105) away from the series rod (111) is fixedly connected to the signal processing unit (103); the top of the signal processing unit (103) is fixedly connected to the alarm system (104); the side of the signal processing unit (103) away from the second connecting wire (105) is fixedly connected to the first connecting wire (102); and the end of the first connecting wire (102) away from the signal processing unit (103) is provided with a computer processing system (101).

7. A testing method comprising the testing device according to any one of claims 1 to 6, characterized in that: The specific steps include: S1, device preparation and wafer fixing: after the wafer silicon body (400) is manufactured, it is sequentially arranged and placed on the top of the placement tray (302); S2, start the rotation and ultrasonic synchronous detection: after the transmission mechanism (301) is started, the placement tray (302) is driven to make the engagement block (203) and the fixed column (303) contact each other, and at this time, the silicon wafer body (400) is driven to rotate, and the detection is performed after the silicon wafer body (400) moves to the bottom end of the signal generating device (108); S3, multi-angle data acquisition: the computer software stores the reflected signal in segments according to the rotation angle, and uses an algorithm to filter the noise to extract the effective signal; S4, signal processing: calculating the thickness and position of the damaged layer according to the time difference and amplitude change of the reflected wave, and integrating the data of all angles to generate a three-dimensional distribution map of the damaged layer on the surface of the silicon wafer body (400); S5, automatic report generation: the system automatically generates a test report and marks the depth, area and distribution characteristics of the damaged layer on the display; S6, process matching: Link with the back-end processing equipment, push damage data, and automatically adjust process parameters according to damage distribution through processing equipment.

8. A wafer damage testing device and a testing method as claimed in claim 7, characterized in that: In the steps S1-S2, the placement tray (302) adopts vacuum adsorption or electrostatic fixing technology, and the vacuum adsorption or electrostatic fixing technology is used to ensure that the silicon wafer body (400) is not offset during the rotation process. The length of the signal generating device (108) is greater than the radius of the silicon wafer body (400). The signal generating device (108) monitors the position of the silicon wafer body (400) in real time, and the detection is triggered when the silicon wafer body (400) moves to the bottom of the signal generating device (108).

9. A wafer damage testing device and a testing method as claimed in claim 7, characterized in that: In the steps S3-S4, the computer software stores the reflected signal in real time at a rotation angle of every 0.5° segment. The algorithm uses a wavelet transform algorithm to filter high-frequency noise and retain the effective signal frequency band. The three-dimensional distribution map is a three-dimensional damage distribution map of the wafer surface generated by a point cloud reconstruction algorithm.

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