Wafer tester and wafer testing equipment

Abstract

The invention relates to the technical field of wafer detection, and particularly provides a wafer tester and wafer testing equipment, and the wafer tester comprises a bearing part, a heating assembly and an installation assembly. The bearing part is used for setting a target wafer; the heating assembly is connected with the bearing part, the heating assembly comprises a heating part and a first insulation shielding part arranged outside the heating part, the first insulation shielding part is used for shielding first electromagnetic interference, and the first electromagnetic interference is electromagnetic interference of the heating part on a target wafer; the mounting assembly is connected with the heating assembly, the mounting assembly comprises a mounting seat and a second insulation shielding piece arranged between the mounting seat and the heating assembly, the mounting seat is configured to be connected with the driving device, the second insulation shielding piece is used for shielding second electromagnetic interference, and the second electromagnetic interference is electromagnetic interference of the driving device on the target wafer. According to the wafer tester and the wafer testing equipment, electromagnetic interference can be effectively shielded, and the detection precision is improved.

Description

Technical Field

[0001] The present invention relates to the field of wafer testing technology, and in particular to a wafer tester and wafer testing equipment. Background Art

[0002] Wafers are one of the basic materials for making semiconductors. To ensure the quality of finished products, wafers need to be tested. During the test, the wafer is placed on a carrier and heated to a certain temperature. The electrical properties of the wafer are tested through the cooperation of a drive device and a detection instrument. In existing wafer testers, wafer detection is easily affected by electromagnetic interference and has low detection accuracy. Summary of the invention

[0003] The wafer tester and wafer testing equipment provided by the embodiments of the present invention at least solve the problem that the existing wafer testing is susceptible to electromagnetic interference and has low testing accuracy, and can effectively shield electromagnetic interference and improve testing accuracy.

[0004] In a first aspect, the present invention provides a wafer tester, comprising a carrier, the carrier being used to set a target wafer; a heating assembly, the heating assembly being connected to the carrier, the heating assembly comprising a heating component, and a first insulating shielding component arranged outside the heating component, the first insulating shielding component being used to shield a first electromagnetic interference, the first electromagnetic interference being the electromagnetic interference of the heating component to the target wafer; and a mounting assembly, the mounting assembly being connected to the heating assembly, the mounting assembly comprising a mounting seat, and a second insulating shielding component being arranged between the mounting seat and the heating assembly, the mounting seat being configured to be connected to a driving device, the second insulating shielding component being used to shield a second electromagnetic interference, the second electromagnetic interference being the electromagnetic interference of the driving device to the target wafer.

[0005] In one embodiment of the present invention, the first insulating shielding component includes a first insulating part, a second insulating part and a first electromagnetic shielding part, the first insulating part is connected to the mounting assembly, the heating part is arranged on the first insulating part, the second insulating part is connected to the carrier, the first electromagnetic shielding part is arranged between the second insulating part and the heating part, and the first electromagnetic shielding part is grounded.

[0006] In one embodiment of the present invention, the first insulating shielding member also includes a first grounding component, the first grounding component includes a connected grounding contact portion and a grounding connecting portion, the grounding contact portion is arranged between the first electromagnetic shielding component and the second insulating component, the grounding contact portion is arranged to be a square structure, the center of the grounding contact portion is hollowed out, and the grounding connecting portion is grounded.

[0007] In one embodiment of the present invention, it also includes a plurality of first thermal insulation members, wherein the first thermal insulation members are arranged between the first insulating shielding member and the second insulating shielding member, and the first thermal insulation members are respectively connected to the first insulating shielding member and the second insulating shielding member to reduce the heat conduction area between the heating component and the mounting component through the first thermal insulation members.

[0008] In one embodiment of the present invention, the first thermal insulation member is configured as a cylindrical structure, a fastener is arranged inside the first thermal insulation member, and the fastener includes an end portion and a connecting portion; the end portion is arranged on the side of the mounting seat away from the supporting member, a spring washer is arranged between the end portion and the mounting seat, and two wedge-shaped gaskets are arranged between the spring washer and the mounting seat; the connecting portion is connected to the supporting member, and an insulating layer is arranged on at least part of the connecting portion.

[0009] In one embodiment of the present invention, the second insulating shielding member includes a third insulating component and a second electromagnetic shielding component, the third insulating component is arranged on the mounting seat, the second electromagnetic shielding component is arranged on the third insulating component, the second electromagnetic shielding component is grounded, and the second electromagnetic shielding component is connected to the heating assembly.

[0010] In one embodiment of the present invention, the mounting base includes a first mounting support, which is configured to be connected to the driving device; a plurality of limiting holes are arranged on the first mounting support, and the plurality of limiting holes are arranged in sequence along the circumference of the target wafer, and a second thermal insulation member is arranged in each of the limiting holes; and a second mounting support, which is arranged on the second thermal insulation member, and the second mounting support is connected to the heating component.

[0011] In one embodiment of the present invention, a mounting through hole is provided on the first mounting support, and a plurality of leveling holes are provided on the hole wall of the mounting through hole. The plurality of leveling holes are sequentially arranged along the circumference of the target wafer, and a first leveling member is provided in each leveling hole. The first leveling member is configured to be movable relative to the leveling hole and then fixed, and a first leveling portion is provided on the first leveling member; a second leveling member is movably provided in the mounting through hole, and a second leveling portion corresponding to the first leveling portion is provided on the second leveling member, and the second leveling portion abuts against the first leveling portion; wherein the first leveling member moves to drive the second leveling member to move.

[0012] In one embodiment of the present invention, an anti-interference coating is provided on the bearing surface of the carrier, the anti-interference coating is used to shield external interference, and the bearing surface is the surface of the carrier contacting the target wafer.

[0013] In the second aspect, the present invention also provides a wafer testing device, comprising a driving device, a precision collector, a compensation calculator, a controller, and a wafer tester as described in any one of the above; the driving end of the driving device is connected to the mounting seat; the precision collector is used to detect the real-time motion error value of the target wafer; the compensation calculator is electrically connected to the precision collector, and the compensation calculator is used to calculate the corresponding motion compensation value based on the real-time motion error value; the controller is electrically connected to the compensation calculator and the driving device, respectively, and the controller is used to adjust the driving parameters of the driving device according to the motion compensation value so that the real-time motion error value is not greater than the preset error value.

[0014] The above technical solution of the present invention has the following beneficial effects compared with the prior art:

[0015] The wafer tester and wafer testing equipment of the present invention shield electromagnetic interference by setting a first insulating shielding member and a second insulating shielding member to prevent electromagnetic interference from affecting the detection accuracy of the tester. When the detection accuracy is guaranteed, the overall detection reliability is enhanced, the problem of repeated detection is avoided, and the detection efficiency is improved to a certain extent. In addition, when the electromagnetic interference is shielded, the hardware loss of the instrument is reduced, which effectively extends its service life and saves the cost of overhaul and maintenance. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the prior art descriptions. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other embodiments can be obtained based on these drawings without creative work. In the drawings:

[0017] Figure 1 It is a schematic diagram of the structure of a wafer tester in a preferred embodiment of the present invention.

[0018] Figure 2 It is a schematic diagram of the exploded structure of the heating component in the preferred embodiment of the present invention.

[0019] Figure 3 It is a schematic diagram of the explosion structure of a wafer tester in a preferred embodiment of the present invention.

[0020] Figure 4 It is a schematic diagram of the structure of the heat insulation group in the preferred embodiment of the present invention.

[0021] Figure 5 It is a schematic diagram of a partial cross-sectional structure of a wafer tester in a preferred embodiment of the present invention.

[0022] Figure 6It is a schematic diagram of the exploded structure of the installation assembly in the preferred embodiment of the present invention.

[0023] Figure 7 It is a schematic cross-sectional structural diagram of the installation assembly in the preferred embodiment of the present invention.

[0024] Figure 8 It is a schematic diagram of the structure of the heating component in a preferred embodiment of the present invention.

[0025] Fig. 9 It is a schematic diagram of the dimensions of the heating component in the preferred embodiment of the present invention.

[0026] Fig.10 It is one of the structural schematic diagrams of the bearing member in the preferred embodiment of the present invention.

[0027] Fig.11 It is a schematic cross-sectional structural diagram of a bearing member in a preferred embodiment of the present invention.

[0028] Fig.12 This is the second structural schematic diagram of the bearing member in the preferred embodiment of the present invention.

[0029] Fig.13 It is a schematic diagram of the electrical connection structure of the controller in the preferred embodiment of the present invention.

[0030] The above drawings include the following reference numerals:

[0031] 10. Bearing member; 11. Bearing surface; 111. Adsorption groove; 112. Adsorption hole; 113. Annular suction group; 114. Suction hole; 115. Anti-interference coating; 12. Adsorption channel; 20. Heating assembly; 21. Heating component; 22. First insulating shielding member; 221. First insulating member; 222. Second insulating member; 223. First electromagnetic shielding member; 224. First grounding member; 2241. Grounding contact portion; 2242. Grounding connection portion; 2243. Hollowing; 30. Mounting assembly; 31. Mounting seat; 311. First mounting support; 3111. Positioning hole; 3112. Second thermal insulation member; 3113 , mounting through hole; 31131, leveling hole; 31132, first leveling piece; 31133, first leveling portion; 31134, second leveling piece; 31135, second leveling portion; 312, second mounting support; 32, second insulating shielding piece; 321, third insulating component; 322, second electromagnetic shielding component; 323, second grounding component; 40, thermal insulation group; 41, first thermal insulation piece; 42, fastener; 421, connecting portion; 4211, insulating layer; 422, end portion; 423, spring pad; 424, wedge-shaped gasket; 51, temperature sensor; 52, precision collector; 60, compensation calculator; 70, controller. DETAILED DESCRIPTION

[0032] Embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although certain embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be construed as being limited to the embodiments described herein, which are instead provided for a more thorough and complete understanding of the present invention. It should be understood that the drawings and embodiments of the present invention are only for exemplary purposes and are not intended to limit the scope of protection of the present invention.

[0033] It should be noted that in semiconductor manufacturing and testing, the wafer needs to be heated to a certain temperature, such as 150°C to 200°C, for electrical performance testing. The corresponding temperature accuracy range is within ±0.5°C, and the deviation of each position dimension on the wafer is within ±0.5°C.

[0034] In the prior art, a wafer heater is disposed between a wafer carrier and a wafer base. During heating, the heater generates heat and heats the wafer carrier according to heat conduction, thereby heating the wafer on the carrier. Generally speaking, the heater is electrically heated. During the heating process, the electrically powered heater generates electromagnetic interference.

[0035] In addition, the wafer base is connected to the driving end of the driving device and is driven by the driving device. The driving device involves many energized components. During the detection process, the driving device will also generate electromagnetic interference.

[0036] Electromagnetic interference can cause problems such as signal distortion and reduced resolution, which in turn reduces detection accuracy. As detection accuracy decreases, the possibility of detection errors increases, which leads to reduced detection reliability. In order to ensure the reliability of the test results, repeated tests are required, which reduces detection efficiency. In addition, under the influence of electromagnetic interference, the service life of the corresponding equipment is also easily affected, and the cost of inspection and maintenance is high.

[0037] To solve the above problems, refer to Figure 1 As shown, the present invention provides a wafer tester, including a carrier 10 , a heating assembly 20 and a mounting assembly 30 .

[0038] The carrier 10 is used to place the target wafer. Preferably, the carrier 10 is configured as a circular structure to match the shape of the target wafer.

[0039] Reference Figure 1 and Figure 2 As shown, the heating assembly 20 is connected to the carrier 10 , and those skilled in the art can set the connection method between the two according to actual needs, such as making the two contact by pressure by screws, or bonding them with high temperature resistant adhesive. The heating assembly 20 includes a heating component 21 and a first insulating shielding component 22 .

[0040] The heating component 21 is powered on. After being powered on, the heating component 21 generates heat and transmits the heat to the carrier 10, thereby finally heating the target wafer so that the target wafer reaches the temperature required for the test, such as 175°C, and then cooperates with corresponding test instruments, such as probes, to realize the test of the target wafer.

[0041] In the prior art, there are many types of heating instruments, such as resistance heating, infrared heating, etc. Those skilled in the art can set the heating component 21 according to actual needs to achieve heating of the target wafer.

[0042] Considering the heating efficiency, the heating component 21 and the carrier 10 should fit as closely as possible to increase the heat conduction area between the two. At the same time, the carrier 10 and the target wafer should also fit as closely as possible to facilitate better heating and detection.

[0043] The first insulating shielding member 22 is disposed outside the heating member 21, and is used to shield the first electromagnetic interference, which is the electromagnetic interference of the heating member 21 on the target wafer. By disposing the first insulating shielding member 22 outside the heating member 21 to shield the first electromagnetic interference, the detection accuracy of the tester can be effectively improved.

[0044] Those skilled in the art can set different shielding methods according to actual needs. For example, by setting metal shielding materials, electromagnetic energy is prevented from entering and exiting, thereby reducing the impact of electromagnetic interference. Alternatively, by setting grounding, interference current is introduced into the earth, thereby reducing the impact of electromagnetic interference.

[0045] Reference Figure 1 and Figure 3 As shown, the mounting assembly 30 is connected to the heating assembly 20, and those skilled in the art can set the connection method between the two according to actual needs, such as making the two contact under pressure by screws.

[0046] The mounting assembly 30 includes a mounting seat 31 and a second insulating shielding member 32. The mounting seat 31 is used to carry corresponding components and to connect the driving device. For example, a mounting hole is provided on the mounting seat 31 to connect with a screw, a bolt, etc. to the driving end of the driving device, so as to cooperate with a corresponding test instrument, such as a probe, etc., to achieve testing of the target wafer.

[0047] The driving device and the testing instrument belong to the prior art, and those skilled in the art can configure them as required, and their structures, working principles, etc. will not be described in detail.

[0048] The second insulating shielding member 32 is disposed between the mounting seat 31 and the heating assembly 20. The second insulating shielding member 32 is used to shield the second electromagnetic interference, which is the electromagnetic interference of the driving device to the target wafer. By arranging the second insulating shielding member 32 on the mounting seat 31 to shield the second electromagnetic interference, the detection accuracy of the detector can be effectively improved.

[0049] Those skilled in the art can set different shielding methods according to actual needs. For example, by setting metal shielding materials, electromagnetic energy is prevented from entering and exiting, thereby reducing the impact of electromagnetic interference. Alternatively, by setting grounding, interference current is introduced into the earth, thereby reducing the impact of electromagnetic interference.

[0050] During the test, the target wafer is placed on the carrier 10 and heated by the heating component 21. The heat of the heating component 21 is transferred to the carrier 10, and the target wafer is heated so that the target wafer reaches the temperature required for the test. After the heating is completed, the target wafer can be tested by corresponding test instruments, such as probes. During the test, the first insulating shielding member 22 and the second insulating shielding member 32 cooperate with each other to shield the corresponding electromagnetic interference, thereby effectively improving the detection accuracy, enhancing the detection reliability, improving the detection efficiency and extending the service life of the detector.

[0051] The wafer tester of the present invention shields electromagnetic interference by providing a first insulating shielding member 22 and a second insulating shielding member 32 to prevent electromagnetic interference from affecting the detection accuracy of the tester. When the detection accuracy is guaranteed, the overall detection reliability is enhanced, the problem of repeated detection is avoided, and the detection efficiency is improved to a certain extent. In addition, when the electromagnetic interference is shielded, the hardware loss of the instrument is reduced, which effectively extends its service life and saves the cost of overhaul and maintenance.

[0052] Reference Figure 2 and Figure 5 As shown, in the wafer tester described in the present invention, in some embodiments, the first insulating shielding member 22 includes a first insulating component 221 , a second insulating component 222 and a first electromagnetic shielding component 223 .

[0053] The second insulating component 222 is disposed between the carrier 10 and the heating component 21, and is connected to the carrier 10 to achieve insulation between the carrier 10 and the heating component 21. Preferably, the second insulating component 222 is configured as an epoxy resin board to reduce leakage value.

[0054] The first electromagnetic shielding component 223 is disposed between the second insulating component 222 and the heating component 21. The first electromagnetic shielding component 223 is grounded to absorb and conduct the electromagnetic interference of the heating component 21 to the ground, thereby preventing the first electromagnetic interference from affecting the detection accuracy. Preferably, the first electromagnetic shielding component 223 is configured as a permalloy plate. Permalloy has high magnetic permeability, low coercive force and good mechanical strength, and can well shield electromagnetic interference.

[0055] The heating component 21 is arranged between the first insulating component 221 and the first electromagnetic shielding component 223, and is pressed by the first insulating component 221, so that the heating component 21 is in close contact with other components, thereby increasing the heat conduction area and ensuring that the heat is conducted to the carrier 10 as quickly as possible to heat the target wafer, thereby improving the heating efficiency.

[0056] Preferably, the material of the first insulating component 221 is set to ceramic. On the basis of compression, the ceramic can play a good role in insulation and heat insulation, thereby improving the heating efficiency.

[0057] Further, see Figure 2 As shown, in the wafer tester of the present invention, in some embodiments, the first insulating shielding component 22 further includes a first grounding component 224 .

[0058] The first grounding component 224 includes a connected grounding contact portion 2241 and a grounding connection portion 2242. The grounding contact portion 2241 is disposed between the first electromagnetic shielding component 223 and the second insulating component 222. The grounding contact portion 2241 is configured as a square structure. A hollow 2243 is configured at the center of the grounding contact portion 2241.

[0059] By setting this structure, on the basis of being able to achieve ground shielding, the number of grounding points is effectively increased, so that the overall grounding resistance is small, the shielding effect is improved, the detector is prevented from being damaged, and the service life of the detector is extended. The grounding connection part 2242 is connected to an external wire or the like for grounding. Preferably, the first grounding component 224 is set as copper foil.

[0060] Reference Figure 3 As shown, the wafer tester of the present invention, in some embodiments, further includes a plurality of first thermal insulation members 41. The plurality of first thermal insulation members 41 are disposed between the first insulating shielding member 22 and the second insulating shielding member 32, and the first thermal insulation members 41 are respectively connected to the first insulating shielding member 22 and the second insulating shielding member 32. Those skilled in the art can set the connection method according to actual needs, for example, by setting screws.

[0061] During the actual detection process, not all the heat generated by the heating component 21 is conducted to the carrier 10 to heat the target wafer, but part of the heat is conducted to the side of the mounting seat 31 .

[0062] Since other devices are also provided on one side of the mounting seat 31, such as a driving device, a visual inspection device, etc., when the heat of the heating component 21 is conducted to the side of the mounting seat 31, the mounting seat 31 and nearby devices are easily affected, not only reducing their service life, but also possibly causing thermal expansion and contraction due to the difference in temperature between replacing the wafer and testing the wafer, thereby affecting the flatness of the upper carrier and ultimately affecting the wafer inspection accuracy.

[0063] In addition, during the inspection, there are a large number of target wafers. The problem of heat loss prolongs the single heating time and reduces the heating efficiency. With the accumulation of multiple inspections, the overall inspection efficiency is greatly reduced, making it difficult to meet the needs of short-time heating and efficient inspection.

[0064] To this end, a first heat insulating member 41 is disposed between the first insulating shielding member 22 and the second insulating shielding member 32 to reduce the heat conduction area between the mounting seat 31 and the carrier 10 .

[0065] Since a plurality of first heat insulating members 41 are provided, the contact area of ​​the bearing member 10 connected by the plurality of first heat insulating members 41 is reduced, and in the case of contact heat conduction, the heat conduction area from the bearing member 10 to the mounting seat 31 is correspondingly reduced, thereby reducing the heat loss of the heating element and achieving heat insulation. This effectively prevents other devices on one side of the mounting seat 31 from being affected by high temperature, thereby extending their service life.

[0066] Taking the cylindrical first heat insulating member 41 as an example, assuming that the cylindrical first heat insulating member 41 is connected to two insulating shielding members through its circular end surface, the corresponding heat conduction area is the product of the circular end surface area of ​​the first heat insulating member 41 and the number of the first heat insulating members 41. It can be imagined that the heat conduction area value is smaller than the heat conduction area of ​​the two insulating shielding members in direct surface contact.

[0067] According to Fourier's law, when the heat conduction area decreases, the amount of heat transferred also decreases. At the same time, the other medium between the first thermal insulation member 41 is usually air. The thermal conductivity of air at normal temperature and pressure is poor, usually much less than that of solid. Therefore, the heat transferred through air can be ignored.

[0068] When the heat is reduced, the possibility of thermal expansion and contraction of the components on one side of the mounting seat 31 during the wafer detection process due to thermal changes is greatly reduced. Adverse effects such as vibration and deformation caused by factors such as drive device driving and processing errors are also effectively reduced due to the small contact area of ​​the multiple first thermal insulation members 41, and the overall stability of the detector is improved, ensuring high test accuracy.

[0069] In addition, it is possible to ensure that as much heat as possible is conducted to the carrier 10 to heat the target wafer, thereby reducing the time required for heating the target wafer once, thereby achieving the effect of improving the heating efficiency and the detection efficiency.

[0070] Those skilled in the art can set the specific structural shape, size, setting position and quantity of the first thermal insulation component 41 according to actual needs.

[0071] Preferably, the first heat insulating member 41 is made of a material that is resistant to high temperatures, insulating and highly rigid, and is illustratively made of ceramic or glass fiber.

[0072] Reference Figure 3 and Figure 5 As shown, in some embodiments of the wafer tester of the present invention, the first thermal insulation member 41 is configured as a cylindrical structure. The cylindrical first thermal insulation member 41 can minimize the stress change caused by the change of the supporting force, improve the stability of the detector, and ensure high test accuracy.

[0073] Furthermore, a fastener 42 is provided inside the cylindrical first heat insulating member 41 to achieve connection and assembly with the mounting seat 31 and the two insulating shielding members.

[0074] Preferably, through holes corresponding to the first thermal insulation member 41 are provided on the heating component 21 and the first insulating shielding member 22 , so as to facilitate the passage of the fasteners 42 in the first thermal insulation member 41 and achieve a firm connection with the bearing member 10 .

[0075] Preferably, through holes corresponding to the first thermal insulation member 41 are provided on the second mounting support 312 and the second insulating shielding member 32 to facilitate the passage of the fastener 42 in the first thermal insulation member 41, and the end portion 422 of the fastener 42 is arranged on the side of the second mounting support 312 away from the second insulating shielding member 32.

[0076] The fastener 42 includes a connecting portion 421 and an end portion 422. The connecting portion 421 is connected to the carrier 10. For example, the connecting portion 421 is provided with a thread, and the carrier 10 is provided with a threaded hole, and the two are threadedly connected. The end portion 422 is provided on the side of the mounting seat 31 away from the carrier 10. Preferably, the fastener 42 is provided as a screw.

[0077] Considering the high temperature environment during wafer inspection, the different thermal expansion coefficients between the fastener 42 and the connection will cause changes in the clamping force. In order to solve this problem, a spring washer 423 is provided between the end portion 422 of the fastener 42 and the mounting seat 31, and two wedge-shaped washers 424 are provided between the spring washer 423 and the mounting seat 31. By setting this structure, the spring washer 423 can undergo elastic deformation, thereby increasing the friction force to prevent loosening. At the same time, the two wedge-shaped washers 424 are wedged against each other to prevent loosening, which can effectively reduce the impact of high temperature, ensure the clamping force of the fastener 42, and prevent the fastener 42 from loosening.

[0078] Furthermore, an insulating layer 4211 is provided on at least part of the connecting portion 421. By providing the insulating layer 4211, it is possible to effectively prevent the fastener 42 from interfering with the performance of the heating component 21. Preferably, the insulating layer 4211 is provided at least on the portion of the connecting portion 421 corresponding to the portion in contact with the heating component 21.

[0079] When the probe is used as a test instrument to test the target wafer, the probe will generate downward pressure. The maximum pressure at a single point can reach 10kg. Under the premise of setting multiple first thermal insulation members 41 to reduce the heat conduction area, how to ensure that the detector is balanced under pressure without affecting the thermal insulation effect needs to be considered.

[0080] In order to take into account both good stability and thermal insulation effect, refer to Figure 4 As shown, in the wafer tester described in the present invention, in some embodiments, at least a portion of the first thermal insulation member 41 is configured as a thermal insulation group 40 .

[0081] There are multiple heat insulation groups 40, which are arranged in sequence along the circumference of the target wafer. Each heat insulation group 40 is provided with three first heat insulation members 41, and the three first heat insulation members 41 are arranged in a triangular distribution. Figure 4 In the figure, dotted lines illustrate the triangle formed by the three first heat insulating members 41 in the heat insulating group 40. The triangular heat insulating group 40 has high structural stability and strong bearing capacity.

[0082] Along the radial direction of the target wafer, the number of the first thermal insulation members 41 located in the outer circle is not less than the number of the first thermal insulation members 41 located in the inner circle, so as to adapt to the target wafer and achieve better support.

[0083] Preferably, the triangular structure of the heat insulation group 40 is set as an isosceles triangle or an equilateral triangle. The vertex of each triangle is set on the same circle of the inner circle, and the other two corners of each triangle are set on the same circle of the outer circle. Figure 4 In the figure, two circles, the inner circle and the outer circle, are indicated by dotted lines.

[0084] Furthermore, four heat insulation groups 40 are provided, and the four heat insulation groups 40 are evenly spaced and distributed in sequence along the circumference of the target wafer. Accordingly, eight first heat insulation members 41 are provided on the outer circle, and four first heat insulation members 41 are provided on the inner circle. By setting this structure, the stability of the detector can be higher while ensuring that the heat conduction area is as small as possible, thereby ensuring high test accuracy.

[0085] Reference Figure 6 and Figure 7 As shown, in some embodiments of the wafer tester of the present invention, the mounting base 31 includes a first mounting support 311 and a second mounting support 312. The first mounting support 311 is used to connect with the driving device. A limiting hole 3111 and a mounting hole are provided on the first mounting support 311, and the mounting hole is used to connect with the driving end of the driving device through screws, bolts, etc.

[0086] A plurality of limiting holes 3111 are provided on the first mounting support 311 , and the plurality of limiting holes 3111 are sequentially arranged along the circumference of the target wafer.

[0087] Those skilled in the art can set the spacing between two adjacent limiting holes 3111 according to actual needs. Exemplarily, the limiting holes 3111 are evenly spaced. Alternatively, the total number of limiting holes 3111 is set to an even number, and two limiting holes 3111 are grouped together, and the spacing between two limiting holes 3111 in the same group is smaller than the spacing between two adjacent limiting holes 3111 in different groups.

[0088] A second heat insulating member 3112 is disposed in each limiting hole 3111, a second mounting support 312 is disposed on the second heat insulating member 3112, and a first heat insulating member 41 is disposed on the second mounting support 312 to achieve connection between the second mounting support 312 and the heating assembly 20. Further heat insulation is achieved by arranging the second heat insulating member 3112 to cooperate with the first heat insulating member 41.

[0089] As can be imagined, although the first heat insulating member 41 effectively reduces the heat loss to the side of the mounting seat 31, it is difficult to completely eliminate it. Therefore, in the case of setting the first heat insulating member 41, setting the mounting seat 31 as a split structure and setting a plurality of second heat insulating members 3112 between the two supports can further improve the heat insulation effect, prevent other devices on the side of the mounting seat 31 from being affected by high temperature, and extend their service life.

[0090] When the heat is reduced, the possibility of the components on one side of the mounting seat 31 expanding and contracting due to the change of heat during the wafer detection process is greatly reduced. In addition, the adverse effects caused by factors such as the driving of the driving device and processing errors, such as vibration and deformation, are also effectively reduced due to the small contact area of ​​the multiple second thermal insulation members 3112, and the overall stability of the detector is improved, ensuring high test accuracy.

[0091] Preferably, the second heat insulating member 3112 is made of a material that is resistant to high temperatures, insulating and highly rigid, and is illustratively made of ceramic or glass fiber.

[0092] Preferably, the second thermal insulation member 3112 is configured as a block structure so as to focus on structural stability while taking into account the thermal insulation effect.

[0093] In the wafer testing process, factors affecting the detection accuracy include not only electromagnetic interference but also flatness accuracy error. Considering the requirements of the detector for flatness accuracy, in some embodiments of the wafer tester of the present invention, the second mounting support 312 is configured to be movable relative to the first mounting support 311 to adjust the flatness accuracy of the mounting support 31 and reduce the flatness accuracy error, thereby avoiding the flatness accuracy error of the mounting support 31 affecting the flatness accuracy of the upper surface.

[0094] Specifically, refer to Figure 6 and Figure 7 As shown, a mounting through hole 3113 is provided on the first mounting support 311. Preferably, the first mounting support 311 is provided in a ring-shaped or ring-like structure.

[0095] A plurality of leveling holes 31131 are arranged on the hole wall of the mounting through hole 3113 , and the plurality of leveling holes 31131 are arranged in sequence along the circumference of the target wafer. Preferably, the extension square of the leveling hole 31131 is perpendicular to the extension direction of the mounting through hole 3113 .

[0096] Each leveling hole 31131 is provided with a first leveling member 31132, which is configured to be fixed after being moved relative to the leveling hole 31131, and a first leveling portion 31133 is provided on the first leveling member 31132. Preferably, the first leveling member 31132 is provided as a screw, and a corresponding thread is provided in the leveling hole 31131, and the two are threadedly connected to convert rotation into axial movement. Preferably, the first leveling portion 31133 is provided as an inclined structure.

[0097] A second leveling member 31134 is movably disposed in the mounting through hole 3113 . A second leveling portion 31135 corresponding to the first leveling portion 31133 is disposed on the second leveling member 31134 . The second leveling portion 31135 abuts against the first leveling portion 31133 .

[0098] Preferably, the second leveling member 31134 is also configured to be annular so as to minimize the contact area between the second mounting support 312 while achieving flatness precision adjustment.

[0099] The first leveling portion 31133 is configured as a groove-type structure. Preferably, the first leveling portion 31133 is cut in a plane where the axis of the mounting through hole 3113 is located, and the cross-section of the cut groove is a triangle, so that the groove surface corresponding to one of the sides of the triangle cooperates with the first leveling portion 31133.

[0100] When the first leveling member 31132 is moved by force, the first leveling portion 31133 and the second leveling portion 31135 cooperate to convert the radial movement of the first leveling member 31132 relative to the mounting through hole 3113 into the axial movement of the second leveling member 31134 relative to the mounting through hole 3113, thereby driving the second leveling member 31134 to move.

[0101] Since there are multiple first leveling members 31132, by adjusting the corresponding first leveling members 31132, the flatness accuracy of the second mounting support 312 can be adjusted and the flatness accuracy error can be reduced, thereby preventing the flatness accuracy error of the mounting base 31 from affecting the flatness accuracy above.

[0102] Reference Figure 6 As shown, in the wafer tester described in the present invention, in some embodiments, the second insulating shielding component 32 includes a third insulating component 321 and a second electromagnetic shielding component 322 .

[0103] The third insulating component 321 is disposed on the second mounting support 312 to achieve an insulating connection with the second mounting support 312. Preferably, the third insulating component 321 is configured to be ceramic, which can effectively play the role of insulation and heat insulation.

[0104] The second electromagnetic shielding component 322 is disposed on the third insulating component 321, and the second electromagnetic shielding component 322 is grounded to absorb and conduct the electromagnetic interference of the driving device to the ground, thereby preventing the second electromagnetic interference from affecting the detection accuracy. Preferably, the second electromagnetic shielding component 322 is configured as a permalloy plate, which has high magnetic permeability, low coercive force and good mechanical strength, and can well shield electromagnetic interference.

[0105] Those skilled in the art can set the connection method between the components according to actual needs, such as using screws to make the components contact with each other under pressure, or using high temperature resistant glue to bond them.

[0106] Furthermore, the second insulating shielding member 32 further includes a second grounding member 323. The second grounding member 323 is disposed on the second electromagnetic shielding member 322 and is grounded. The second grounding member 323 is configured as a "T"-shaped structure to increase the number of grounding points, reduce grounding resistance, and improve shielding effect.

[0107] Preferably, the second grounding component 323 is configured as copper foil.

[0108] Reference Figure 8 and Fig. 9 As shown, the heating component 21 is configured as a coiled heating wire, and those skilled in the art can set a specific coiled shape according to actual needs, for example, setting it to a planar spiral structure, etc.

[0109] When heating, along the radial direction of the target wafer, the part of the material close to the center of the circle dissipates heat slowly, while the part located at the periphery dissipates heat quickly. In order to ensure the temperature uniformity of the carrier 10, it is necessary to adjust the coiling arrangement density of the heating component 21 so that the internal energy density is low and the external energy density is high, thereby keeping the internal and external temperatures consistent.

[0110] Therefore, the coiling density of the heating component 21 is set to gradually decrease along the direction from the periphery of the target wafer to the center of the target wafer. The coiling density of the heating component 21 includes the heating wire width of the heating component 21 and the spacing between adjacent heating wires.

[0111] The sparse inside and dense outside distribution structure can effectively ensure that the internal and external temperatures of the heating component 21 remain consistent during heating, thereby achieving uniform heating and improving heating efficiency.

[0112] Preferably, the material of the heating component 21 includes but is not limited to mica board, polyimide (PI), silica gel and other high temperature resistant insulating materials.

[0113] Preferably, the heating component 21 is arranged into three annular regions along the radial direction of the target wafer, which are respectively recorded as an outer peripheral region, a middle region and a central region.

[0114] The width of the heating wire of the heating component 21 in the peripheral area is set to 4.5 to 5.5 mm, for example, 4.5 mm, 4.6 mm, 4.7 mm, 4.8 mm, 4.9 mm, 5 mm, 5.1 mm, 5.2 mm, 5.3 mm, 5.4 mm, 5.5 mm, etc.; the spacing between adjacent heating wires is set to 2.5 to 3.5 mm, for example, 2.5 mm, 2.6 mm, 2.7 mm, 2.8 mm, 2.9 mm, 3 mm, 3.1 mm, 3.2 mm, 3.3 mm, 3.4 mm, 3.5 mm, etc.

[0115] The width of the heating wire of the heating component 21 in the middle area is set to 3 to 4 mm, for example, 3mm, 3.1mm, 3.2mm, 3.3mm, 3.4mm, 3.5mm, 3.6mm, 3.7mm, 3.8mm, 3.9mm, 4mm, etc.; the spacing between adjacent heating wires is set to 4 to 5 mm, for example, 4mm, 4.1mm, 4.2mm, 4.3mm, 4.4mm, 4.5mm, 4.6mm, 4.7mm, 4.8mm, 4.9mm, 5mm, etc.

[0116] The width of the heating wire of the heating component 21 in the central area is set to 2 to 3 mm, for example, 2mm, 2.1mm, 2.2mm, 2.3mm, 2.4mm, 2.5mm, 2.6mm, 2.7mm, 2.8mm, 2.9mm, 3mm, etc.; the spacing between adjacent heating wires is set to 5.5 to 6.5 mm, for example, 5.5mm, 5.6mm, 5.7mm, 5.8mm, 5.9mm, 6mm, 6.1mm, 6.2mm, 6.3mm, 6.4mm, 6.5mm, etc.

[0117] By setting this structure, the heating temperature uniformity of the heating component 21 can be effectively improved, high heating efficiency can be guaranteed, and the actual heating temperature accuracy range can be ensured to be within ±0.5°C, and the deviation of each position dimension on the target wafer can be within ±0.5°C.

[0118] Furthermore, the coiling arrangement density is related to the load-bearing size H of the carrier 10. c Related, the load-bearing dimension H of the bearing member 10 c The width of the heating wire of the heating component 21 and the spacing between adjacent heating wires are determined according to the carrying size H of the carrier 10. c Make adjustments to the load-bearing dimension H of the carrier 10. c The larger the thickness of the carrier 10 is, the smaller the difference in the width and spacing of the heating wires in each area is.

[0119] Reference Fig.10 and Fig.11 As shown, in some embodiments of the wafer tester of the present invention, the carrying size H of the carrier 10 is c Satisfy the relationship, 10mm≤H c ≤30mm, for example, the load-bearing dimension H of the carrier 10 c Settings include 10mm, 11mm, 12mm, 13mm, 14mm, 15mm, 16mm, 17mm, 18mm, 19mm, 20mm, 21mm, 22mm, 23mm, 24mm, 25mm, 26mm, 27mm, 28mm, 29mm, 30mm, etc.

[0120] The load-bearing dimension H of the bearing member 10 is c It cannot be too small. When the load-bearing size H of the bearing member 10 is c If it is too small, less than 10 mm, it is difficult to effectively ensure its accuracy and temperature uniformity. c It cannot be too large. When the load-bearing size H of the bearing member 10 is c If it is too large, greater than 30 mm, it will affect the heat conduction effect. c When set to 10 to 30 mm, it can achieve good heat conduction while ensuring good accuracy and temperature uniformity.

[0121] On this basis, the load-bearing dimension H of the bearing member 10 is c Related to the preset parameter range. The preset parameter range includes the accuracy range of the bearing surface 11 and the temperature uniformity range of the target wafer. The bearing surface 11 is the surface of the bearing member 10 that contacts the target wafer. Among them, the accuracy of the bearing surface 11 is the flatness accuracy. The higher the flatness accuracy requirement, the higher the temperature uniformity requirement, and the bearing size H of the bearing member 10. c Also set the larger.

[0122] In order to ensure that the external interference is small during the wafer electrical performance test, the surface resistivity of the carrier 10 is as small as possible. Fig.11 As shown, in some embodiments, an anti-interference coating 115 is provided on the carrying surface 11 of the carrier 10, and the anti-interference coating 115 is used to shield external interference. The carrying surface 11 is the surface of the carrier 10 that contacts the target wafer.

[0123] The surface resistivity of the carrier 10 can be effectively reduced by providing the anti-interference coating 115. Preferably, the anti-interference coating 115 is provided as a gold-plated layer or a nickel-plated layer. Among them, the nickel-plated layer is preferred, and the gold-plated layer is generally used in situations where the resistivity requirement is very low.

[0124] Preferably, the carrier 10 is subjected to special heat treatment to ensure that the flatness of the carrier 10 is within 10 microns under high temperature and room temperature conditions. How to perform heat treatment belongs to the prior art and will not be described in detail.

[0125] Considering the target wafer's requirements for temperature accuracy, in order to ensure that the actual temperature of the target wafer is equal to the preset temperature value, so as to ensure good heating effect and high heating efficiency, refer to Figure 2 and Fig.13 As shown, the wafer tester described in the present invention, in some embodiments, further includes a temperature sensor 51 , a compensation calculator 60 and a controller 70 .

[0126] The temperature sensor 51 is disposed on the carrier 10 and is used to detect the real-time temperature value of the target wafer. Preferably, the temperature sensor 51 is configured as a thermocouple.

[0127] The compensation calculator 60 is electrically connected to the temperature sensor 51 . The compensation calculator 60 is used to compare the preset temperature value with the real-time temperature value, and output a compensated temperature value when the preset temperature value and the real-time temperature value are not equal.

[0128] The controller 70 is electrically connected to the compensation calculator 60 and the heating component 21 , respectively. The controller 70 is used to adjust the heating power of the heating component 21 according to the compensation temperature value so that the real-time temperature value is equal to the preset temperature value.

[0129] By setting the temperature sensor 51, the compensation calculator 60 and the controller 70, the three cooperate with each other to adjust the heating power of the heating component 21, accurately control the temperature, and ensure that the actual temperature value of the target wafer is equal to the preset temperature value, so as to ensure a good heating effect and high heating efficiency. In addition, it can also achieve the effect of energy saving and improving safety.

[0130] When performing wafer inspection, the target wafer needs to be fixed. By fixing the target wafer, firstly, high detection accuracy can be guaranteed, ensuring that the detection instruments, such as probes, can accurately contact the target wafer. Secondly, the detection stability and consistency are also guaranteed, avoiding the target wafer from being affected by interference such as displacement and vibration, and preventing the target wafer from being damaged by collision and scratching. Finally, the time wasted in adjusting the position of the target wafer is reduced, and the detection efficiency is improved.

[0131] Preferably, the wafer tester described in the present invention fixes the target wafer by negative pressure adsorption.

[0132] Specifically, refer to Fig.10 and Fig.11 As shown, in some embodiments of the wafer tester described in the present invention, a plurality of adsorption grooves 111 are provided on the carrying surface 11 of the carrier 10, and the plurality of adsorption grooves 111 are arranged in sequence along the radial direction of the target wafer, and at least one adsorption hole 112 is provided at the bottom of each adsorption groove 111.

[0133] The carrier 10 is provided with adsorption channels 12 , which are respectively connected to the adsorption holes 112 . The adsorption channels 12 are configured to generate negative pressure to adsorb and fix the target wafer.

[0134] Exemplarily, the adsorption channel 12 is connected to the negative pressure device through a negative pressure connector, so that negative pressure is generated in the adsorption channel 12. Since the adsorption groove 111 is connected to the adsorption channel 12 through the adsorption hole 112, when the adsorption channel 12 generates negative pressure, a relatively closed space is formed between the adsorption groove 111 and the target wafer on the carrying surface 11 to adsorb and fix the target wafer. After the detection is completed, the negative pressure device stops, and the target wafer can be separated from the carrier 10.

[0135] Preferably, the plurality of adsorption grooves 111 are all configured to be arc-shaped or ring-shaped and are concentrically arranged to achieve adsorption of the target wafer.

[0136] Preferably, at least some of the adjacent adsorption grooves 111 are connected. Exemplarily, a connecting groove is provided on the carrying surface 11 , and the extending direction of the connecting groove is parallel to the radial direction of the target wafer, so as to realize the connection between the adjacent adsorption grooves 111 .

[0137] By providing a connecting groove to connect adjacent adsorption grooves 111 , it is possible to effectively prevent the adsorption holes 112 in some adsorption grooves 111 from being blocked and the corresponding adsorption grooves 111 from being unable to achieve negative pressure adsorption, thereby effectively ensuring the reliability of adsorption fixation.

[0138] Reference Fig.12 As shown, in some embodiments of the wafer tester of the present invention, a plurality of annular suction groups 113 are provided on the bearing surface 11 of the bearing member 10, and the plurality of annular suction groups 113 are sequentially arranged along the radial direction of the target wafer. Each annular suction group 113 is provided with a plurality of suction holes 114, and the plurality of suction holes 114 are sequentially arranged along the circumference of the target wafer.

[0139] The carrier 10 is provided with adsorption channels 12 , which are respectively connected to the suction holes 114 . The adsorption channels 12 are configured to generate negative pressure to adsorb and fix the target wafer.

[0140] Exemplarily, the adsorption channel 12 is connected to the negative pressure device through a negative pressure connector, so that negative pressure is generated in the adsorption channel 12. At this time, a relatively closed space is formed between the suction hole 114 connected to the adsorption channel 12 and the target wafer on the carrier surface 11 to adsorb and fix the target wafer. After the detection is completed, the negative pressure device stops, and the target wafer can be separated from the carrier 10.

[0141] Preferably, the diameter D of the air intake hole 114 is k The diameter is set to 0.2 to 0.6 mm. For example, the diameter is set to 0.2 mm, 0.25 mm, 0.3 mm, 0.35 mm, 0.4 mm, 0.45 mm, 0.5 mm, 0.55 mm, 0.6 mm, etc.

[0142] Among them, when facing a thinner target wafer, especially a target wafer below 200 microns, a small-aperture suction hole 114 is preferably used for adsorption.

[0143] The diameter of the air intake hole 114 cannot be too small. When the diameter of the air intake hole 114 is too small, less than 0.2 mm, the processing difficulty of the air intake hole 114 increases, which is not only difficult to process and increases the production cost, but also affects the adsorption and fixing effect.

[0144] The diameter of the air intake hole 114 cannot be too large. When the diameter of the air intake hole 114 is too large, greater than 0.6 mm, when facing a thinner target wafer, especially a target wafer below 200 microns, it will affect the flatness of the target wafer.

[0145] When the aperture of the suction hole 114 is set to 0.2 to 0.6 mm, a good adsorption and fixing effect can be achieved without affecting the target wafer.

[0146] Preferably, the hole spacing L between two adjacent air intake holes 114 is k The hole spacing between two adjacent air intake holes 114 is calculated based on the center points of the two air intake holes 114. For example, the hole spacing between two adjacent air intake holes 114 is set to 5 mm, 5.5 mm, 6 mm, 6.5 mm, 7 mm, 7.5 mm, 8 mm, etc.

[0147] The hole spacing between two adjacent suction holes 114 cannot be too small. When the hole diameter and the area of ​​the bearing surface 11 are consistent, the smaller the hole spacing, the more suction holes 114 need to be set. When there are too many suction holes 114, it is difficult to ensure the flatness of the wafer.

[0148] The hole spacing between two adjacent suction holes 114 cannot be too large. When the hole diameter and the area of ​​the bearing surface 11 are consistent, the larger the hole spacing, the fewer suction holes 114 need to be set. When the number of suction holes 114 is small, it is difficult to ensure the adsorption and fixing effect.

[0149] When the hole spacing is set to 5 to 8 mm, both wafer flatness and adsorption fixation effects can be well taken into account.

[0150] The present invention also provides a wafer testing device, including a testing instrument, a driving device, and a wafer tester as described in any one of the above embodiments.

[0151] The driving end of the driving device is connected to the first mounting support 311. When in use, the driving device realizes corresponding driving to cooperate with the test instrument to realize wafer detection. Those skilled in the art can set the corresponding driving device according to actual needs, such as a three-axis driver, etc.

[0152] Since the wafer testing equipment described in the present invention includes the wafer tester described in the above embodiment, the wafer testing equipment also has all the beneficial effects, which will not be described in detail.

[0153] Reference Fig.13 As shown, the wafer testing equipment described in the present invention, in some embodiments, further includes a precision collector 52.

[0154] The precision collector 52 is used to detect the real-time motion error value of the target wafer. The compensation calculator 60 is electrically connected to the precision collector 52, and the compensation calculator 60 is used to calculate the corresponding motion compensation value according to the real-time motion error value. The controller 70 is electrically connected to the compensation calculator 60 and the driving device respectively, and the controller 70 is used to adjust the driving parameters of the driving device according to the motion compensation value so that the real-time motion error value is not greater than the preset error value. How to adjust the driving parameters of the driving device belongs to the prior art and will not be repeated.

[0155] During wafer inspection, the flatness of the target wafer must be guaranteed to be within 10 microns. Due to thermal expansion and contraction, the deformation of the carrier 10 is different under different temperature conditions. Therefore, it is necessary to compensate the flatness of the carrier 10 in real time under different temperature conditions.

[0156] By setting up the precision collector 52, it can cooperate with the compensation calculator 60 and the controller 70 to adjust the driving device to ensure that the flatness of the target wafer is within the required range under any temperature conditions, so as to improve the detection accuracy.

[0157] Working principle:

[0158] Before starting the test, check and adjust the corresponding components, such as the second thermal insulation component 3112, the leveling component, etc.

[0159] After the adjustment is completed, the target wafer is placed on the carrier 10, and the negative pressure device is started to generate negative pressure in the adsorption channel 12 and the corresponding holes to adsorb and fix the target wafer.

[0160] Next, the heating component 21 is started, so that the heating component 21 generates heat and transmits the heat to the carrier 10 , thereby finally heating the target wafer.

[0161] During the heating process, the temperature sensor 51, the compensation calculator 60 and the controller 70 cooperate with each other to adjust the heating power of the heating component 21, accurately control the temperature, and ensure that the actual temperature value of the target wafer is equal to the preset temperature value to ensure a good heating effect and high heating efficiency. The precision collector 52, the compensation calculator 60 and the controller 70 cooperate with each other to ensure the flatness of the target wafer to improve the detection accuracy.

[0162] In addition, the first thermal insulation member 41, the second thermal insulation member 3112 and other components cooperate to reduce the heat loss of the heating component 21 to the driving device side, thereby achieving thermal insulation, preventing other devices from being affected by high temperature, and improving heating efficiency.

[0163] After heating to the temperature, the target wafer is tested accordingly by the test instrument. During the test, the first insulating shielding member 22 and the second insulating shielding member 32 cooperate with each other to shield electromagnetic interference and improve the test accuracy. In addition, the first thermal insulation member 31, the second thermal insulation member 112 and other components cooperate to reduce adverse effects such as vibration and deformation, improve the stability of the device, and ensure high test accuracy.

[0164] It should be noted that the term "including" and its variations used in the embodiments of the present invention are open inclusions, that is, "including but not limited to". The term "based on" means "based at least in part on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one other embodiment"; the term "some embodiments" means "at least some embodiments". The modifications of "one" and "multiple" mentioned in the embodiments of the present invention are illustrative and not restrictive. Those skilled in the art should understand that unless the context clearly indicates otherwise, it should be understood as "one or more".

[0165] The user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, stored data, displayed data, etc.) involved in the embodiments of the present invention are all information and data authorized by the user or fully authorized by all parties, and corresponding operation entrances are provided for the user to choose to authorize or refuse.

[0166] The various steps described in the method implementation methods provided by the embodiments of the present invention may be performed in different orders and / or in parallel. In addition, the method implementation methods may include additional steps and / or omit the steps shown. The scope of protection of the present invention is not limited in this respect.

[0167] The term "embodiment" in this specification refers to specific features, structures or characteristics described in conjunction with the embodiment that can be included in at least one embodiment of the present invention. The appearance of this phrase in various places in the specification does not necessarily mean the same embodiment, nor does it mean that it is mutually exclusive with other embodiments and is independent or optional. The various embodiments in this specification are described in a related manner, and the same or similar parts between the various embodiments refer to each other. In particular, for the device, equipment, and system embodiments, since they are basically similar to the method embodiments, the description is relatively simple, and the relevant parts refer to the partial description of the method embodiment.

[0168] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of protection. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be subject to the attached claims.

Claims

1. A wafer tester, characterized in that: include: A carrier, the carrier being used to place a target wafer; A heating assembly, the heating assembly is connected to the carrier, the heating assembly includes a heating component, and a first insulating shielding component arranged outside the heating component, the first insulating shielding component is used to shield a first electromagnetic interference, and the first electromagnetic interference is the electromagnetic interference of the heating component to the target wafer; as well as, A mounting assembly is connected to the heating assembly, the mounting assembly includes a mounting base, and a second insulating shielding member arranged between the mounting base and the heating assembly, the mounting base is configured to be connected to a driving device, and the second insulating shielding member is used to shield a second electromagnetic interference, which is the electromagnetic interference of the driving device to the target wafer.

2. The wafer tester according to claim 1, characterized in that: The first insulating shielding component includes a first insulating part, a second insulating part and a first electromagnetic shielding part, the first insulating part is connected to the mounting assembly, the heating part is arranged on the first insulating part, the second insulating part is connected to the carrier, the first electromagnetic shielding part is arranged between the second insulating part and the heating part, and the first electromagnetic shielding part is grounded.

3. The wafer tester according to claim 2, characterized in that: The first insulating shield also includes: A first grounding component, the first grounding component includes a connected grounding contact portion and a grounding connecting portion, the grounding contact portion is arranged between the first electromagnetic shielding component and the second insulating component, the grounding contact portion is arranged to be a square structure, the center of the grounding contact portion is arranged to be hollow, and the grounding connecting portion is arranged to be grounded.

4. The wafer tester according to claim 1, characterized in that: Also includes: A plurality of first thermal insulation members, wherein the first thermal insulation members are arranged between the first insulating shielding member and the second insulating shielding member, and the first thermal insulation members are respectively connected to the first insulating shielding member and the second insulating shielding member, so as to reduce the heat conduction area between the heating component and the mounting component through the first thermal insulation members.

5. The wafer tester according to claim 4, characterized in that: The first thermal insulation member is configured as a cylindrical structure, a fastener is arranged inside the first thermal insulation member, the fastener includes an end portion and a connecting portion; the end portion is arranged on the side of the mounting seat away from the supporting member, a spring washer is arranged between the end portion and the mounting seat, and two wedge-shaped gaskets are arranged between the spring washer and the mounting seat; the connecting portion is connected to the supporting member, and an insulating layer is arranged on at least part of the connecting portion.

6. The wafer tester according to claim 1, characterized in that: The second insulating shielding component includes a third insulating component and a second electromagnetic shielding component, the third insulating component is arranged on the mounting seat, the second electromagnetic shielding component is arranged on the third insulating component, the second electromagnetic shielding component is grounded, and the second electromagnetic shielding component is connected to the heating assembly.

7. The wafer tester according to claim 1, characterized in that: The mounting base comprises: a first mounting support, the first mounting support being configured to be connected to the driving device; a plurality of limiting holes are provided on the first mounting support, and the plurality of limiting holes are sequentially arranged along the circumference of the target wafer, and a second heat insulating member is provided in each of the limiting holes; and A second mounting support, wherein the second mounting support is disposed on the second thermal insulation member, and the second mounting support is connected to the heating assembly.

8. The wafer tester according to claim 7, characterized in that: The first mounting support is provided with a mounting through hole, and a plurality of leveling holes are provided on the hole wall of the mounting through hole. The plurality of leveling holes are sequentially arranged along the circumference of the target wafer, and a first leveling member is provided in each leveling hole. The first leveling member is configured to be movable relative to the leveling hole and then fixed, and a first leveling portion is provided on the first leveling member; a second leveling member is movably provided in the mounting through hole, and a second leveling portion corresponding to the first leveling portion is provided on the second leveling member, and the second leveling portion abuts against the first leveling portion; wherein, the first leveling member moves to drive the second leveling member to move.

9. The wafer tester according to claim 1, characterized in that: An anti-interference coating is provided on the bearing surface of the bearing member, and the anti-interference coating is used to shield external interference. The bearing surface is the surface of the bearing member contacting the target wafer.

10. A wafer testing device, characterized in that: It comprises a driving device, an accuracy collector, a compensation calculator, a controller, and a wafer tester as claimed in any one of claims 1 to 9; The driving end of the driving device is connected to the mounting seat; The precision collector is used to detect the real-time motion error value of the target wafer; The compensation calculator is electrically connected to the precision collector, and the compensation calculator is used to calculate the corresponding motion compensation value according to the real-time motion error value; The controller is electrically connected to the compensation calculator and the driving device respectively, and is used to adjust the driving parameters of the driving device according to the motion compensation value so that the real-time motion error value is not greater than a preset error value.

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