A test signal transmission device and test method for a digital-analog hybrid microsystem

Abstract

The present invention provides a test signal transmission device and a test method for a digital-analog hybrid microsystem. The device includes: a test board for supplying power to and testing the digital-analog hybrid microsystem; via holes are formed on the test board and are matched with the solder balls for transmitting high-frequency signals of the digital-analog hybrid microsystem; a connection component, including: a conductive film, a plurality of RF probes and a plurality of RF interfaces; wherein, the conductive film is attached to the surface of the test board facing the digital-analog hybrid microsystem; conductive pins matching the positions of the solder balls on the digital-analog hybrid microsystem are distributed on the conductive film for mating with the corresponding solder balls, and the layout positions of the respective conductive pins on the conductive film match the positions of the corresponding solder balls on the digital-analog hybrid microsystem; each RF probe is respectively inserted into the corresponding via hole and connected to the conductive film; each RF interface is distributed around the test board and is connected to the conductive film. The device provided by the present invention can meet the test requirements of each device in the digital-analog hybrid microsystem and helps to improve the test efficiency.

Description

Technical Field

[0001] This application belongs to the technical field of integrated circuit testing, and particularly relates to a test signal transmission device and a test method for a digital-analog hybrid microsystem. Background Art

[0002] By integrating multiple functional chips in a small package, the digital-analog hybrid microsystem realizes miniaturization, high integration, and low power consumption of products while improving system performance, and is widely used in fields such as consumer electronics, communication, biomedical, and computers.

[0003] In the prior art, a single fixture is usually used in combination with a probe to achieve chip-level testing to confirm whether there are potential problems with the chip and ensure the ex-factory quality of the chip. However, with the increasingly complex and diverse performance requirements for functions such as signal acquisition, signal processing, and data interaction in high-integration digital-analog hybrid microsystems, the number of chips, the packaging integration level, and the number of pins in digital-analog hybrid microsystems have all increased significantly. It contains a large number of devices, involves a variety of signal types, and has a small overall size. The test signal transmission device using a single fixture in combination with a probe cannot meet the test requirements of all devices in the digital-analog hybrid microsystem. Using corresponding test signal transmission schemes for each device in the digital-analog hybrid microsystem will result in low test efficiency for the digital-analog hybrid microsystem.

[0004] Based on this, how to provide a test signal transmission device that can meet the test requirements of all devices in the digital-analog hybrid microsystem and has high test efficiency is an important problem that needs to be solved urgently at present. Summary of the Invention

[0005] In view of the above-mentioned disadvantages of the prior art, the purpose of this application is to provide a test signal transmission device for a digital-analog hybrid microsystem, which is used to solve problems such as the existing test signal transmission device being unable to meet the test requirements of high integration, high reliability, and miniaturization of digital-analog hybrid microsystems.

[0006] To achieve the above purpose and other related purposes, the present invention provides a test signal transmission device for a digital-analog hybrid microsystem, including:

[0007] A test board for supplying power and testing the digital-analog hybrid microsystem; a plurality of vias are provided on the test board; the positions of each of the vias respectively match the positions of the solder balls for transmitting high-frequency signals in the digital-analog hybrid microsystem;

[0008] The connection component includes: a conductive film, a plurality of RF probes, and a plurality of RF interfaces; wherein, the conductive film is attached to the surface of the test board facing the digital-analog hybrid microsystem; a plurality of conductive pins are distributed on the outer surface of the conductive film for mating with the corresponding solder balls, and the layout positions of the conductive pins on the conductive film match the positions of the corresponding solder balls on the digital-analog hybrid microsystem; one end of each RF probe is respectively inserted into the corresponding via hole and connected to the conductive film, and the other end of each RF probe is used for inputting or outputting high-frequency test signals; each RF interface is distributed around the test board, and one end of each RF interface is connected to the conductive film, and the other end is used for inputting or outputting test signals.

[0009] In an embodiment of the present invention, the surface of the test board facing the digital-analog hybrid microsystem is plated with a first conductive layer for grounding the test board; the inner wall of the via hole is plated with a second conductive layer, and the second conductive layer is connected to the first conductive layer, and the RF probe is connected to the second conductive layer so that the grounding of the RF probe is consistent with that of the test board.

[0010] In an embodiment of the present invention, the device further includes:

[0011] A pressing mechanism for pressing the digital-analog hybrid microsystem located on the conductive film so that each solder ball of the digital-analog hybrid microsystem is respectively connected to the corresponding conductive pin on the conductive film.

[0012] In an embodiment of the present invention, the pressing mechanism includes: an installation cavity, a positioning card board, and a pressing member; wherein,

[0013] The installation cavity is used for installing and fixing the test board; the RF interface is arranged on the cavity wall of the installation cavity, and one end of the RF interface passes through the cavity wall to connect the conductive film on the test board;

[0014] The positioning card board is located on the surface of the test board facing the digital-analog hybrid microsystem; the positioning card board has a card board body and a positioning card slot; the card board body has a hollow positioning groove body for clamping the positioning card slot; the length and width of the positioning card slot respectively match the length and width of the connection area of the conductive film; the positioning card board is located above the test board, and the position of the positioning card slot matches the position of the connection area of the conductive film; the connection area of the conductive film is the area where the conductive film is connected to the digital-analog hybrid microsystem;

[0015] The pressing member is used for pressing the digital-analog hybrid microsystem and the conductive film so that each solder ball of the digital-analog hybrid microsystem is respectively connected to each conductive pin of the conductive film.

[0016] In an embodiment of the present invention, a support portion is provided on the bottom plate of the installation cavity: the height of the support portion is matched with the height of the RF interface on the cavity wall.

[0017] In an embodiment of the present invention, the pressing member includes: a pressing plate body, a movable pressing block, and an adjusting member; wherein,

[0018] The length and width of the pressing plate body are respectively not less than the length and width of the digital-analog hybrid microsystem; the number of the movable pressing blocks is the same as the number of chips on the pressing surface of the digital-analog hybrid microsystem; a plurality of placement grooves with one end closed and the other end open are formed on the pressing plate body for placing the corresponding movable pressing blocks; the adjusting member is used to connect the movable pressing block and the pressing plate body to adjust the distance between the movable pressing block and the pressing plate body;

[0019] Wherein, the positions of the movable pressing blocks in the pressing plate body respectively match the positions of the chips on the pressing surface of the digital-analog hybrid microsystem; the pressing surface of the digital-analog hybrid microsystem is the surface in contact with the pressing member.

[0020] In an embodiment of the present invention, the pressing member further includes: a housing; the housing is elastically connected to the pressing plate body.

[0021] In an embodiment of the present invention, the first end of the housing is hinged to the positioning card slot, and the second end of the housing is movably connected to the positioning card slot; the first end and the second end of the housing are opposite ends on the housing.

[0022] In an embodiment of the present invention, an analog-to-digital converter is provided on the test board, and the pressing mechanism further includes: a temperature sensor; the temperature sensor is connected to the signal input end of the analog-to-digital converter, and the signal output end of the analog-to-digital converter is connected to the digital-analog hybrid microsystem; the temperature sensor is embedded in the pressing member for sensing the temperature of the pressing member and sending the sensed temperature information to the analog-to-digital converter for the analog-to-digital converter to convert the temperature information into digital temperature information and send the digital temperature information to the digital-analog hybrid microsystem.

[0023] Correspondingly, the present invention provides a test method for a digital-analog hybrid microsystem, which uses the test signal transmission device for the digital-analog hybrid microsystem as described above to test the digital-analog hybrid microsystem; wherein, the test signal transmission device is respectively connected to a test device and a host computer, and the method includes:

[0024] Placing the digital-analog hybrid microsystem in the connection area of the conductive film so that the solder balls of the digital-analog hybrid microsystem are respectively connected to the corresponding conductive pins on the conductive film;

[0025] The test device powers on the digital - analog hybrid microsystem through the test signal transmission device; the host computer controls the digital - analog hybrid microsystem to perform device configuration through the test signal transmission device to form a corresponding signal transceiver link; and, the test device generates a test signal and transmits the test signal to the digital - analog hybrid microsystem through the test signal transmission device; wherein, the high - frequency test signal is transmitted through the conductive film, the radio - frequency probe and the radio - frequency interface; the non - high - frequency test signal is transmitted through the test board, the conductive film and the radio - frequency interface;

[0026] After receiving the test signal, the digital - analog hybrid microsystem uses the signal transceiver link inside the digital - analog hybrid microsystem SIP and returns the test signal to the test device through the test signal transmission device.

[0027] As described above, a test signal transmission device for a digital - analog hybrid microsystem provided by the present application has at least the following beneficial effects:

[0028] By opening vias on the test board that match the solder balls for transmitting high - frequency signals of the digital - analog hybrid microsystem, and setting up connection components to connect the test board, including fitting a conductive film on the test board, inserting radio - frequency probes into each of the vias on the test board, and setting up a radio - frequency interface with one end connected to the conductive film and the other end for input and output of radio - frequency signals, a radio - frequency channel is formed between the digital - analog hybrid microsystem and the external test device. The non - high - frequency test signal is transmitted to the digital - analog hybrid microsystem through the radio - frequency interface, the test board and the conductive film, and the high - frequency test signal is transmitted to the digital - analog hybrid microsystem through the radio - frequency probe and the conductive film, realizing the independent transmission of high - frequency signals and non - high - frequency signals, improving the signal isolation degree. Avoiding the situation that when all signals are transmitted to the digital - analog hybrid microsystem through the test board, due to the large signal frequency span, the performance requirements for the test board are high, increasing the design and material costs of the test board, and the digital - analog hybrid microsystem can be connected to each test device through the test signal transmission device, facilitating various tests and helping to improve the test efficiency of the digital - analog hybrid microsystem. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 Shows a top view of the digital - analog hybrid microsystem.

[0030] Figure 2 Shows a side view of the digital - analog hybrid microsystem.

[0031] Figure 3 Shows a bottom view of the digital - analog hybrid microsystem.

[0032] Figure 4 The structural schematic diagram of a test signal transmission device for a digital - analog hybrid microsystem provided by the present application in an embodiment is shown.

[0033] Figure 5 The structural schematic diagram of a test board provided by the present application in an embodiment is shown.

[0034] Figure 6 The structural schematic diagram of a test signal transmission device for a digital - analog hybrid microsystem provided by the present application in another embodiment is shown.

[0035] Figure 7 The structural schematic diagram of a pressing mechanism provided by the present application in an embodiment is shown.

[0036] Figure 8 The structural schematic diagram of a pressing part provided by the present application in an embodiment is shown.

[0037] Figure 9 The structural schematic diagram of a pressing part provided by the present application in another embodiment is shown.

[0038] Figure 10 The structural schematic diagram of a pressing mechanism provided by the present application in another embodiment is shown.

[0039] Figure 11 The first test result graph obtained by performing a first test on the digital - analog hybrid microsystem based on the test signal transmission device for the digital - analog hybrid microsystem is shown.

[0040] Figure 12 The second test result graph obtained by performing a second test on the digital - analog hybrid microsystem based on the test signal transmission device for the digital - analog hybrid microsystem is shown.

[0041] Figure 13 The process schematic diagram of a test method for a digital - analog hybrid microsystem provided by the present application in an embodiment is shown.

[0042] Explanation of reference numerals

[0043] S1~S3, steps; 1, test board; 11, via hole; 12, first conductive layer; 13, second conductive layer; 2, connection component; 21, conductive film; 211, conductive pin; 22, RF probe; 23, RF interface; 3, pressing mechanism; 31, installation cavity; 311, support part; 32, positioning card board; 321, card board body; 322, positioning card slot; 33, pressing part; 331, pressing plate body; 332, movable pressing block; 333, adjusting component; 34, temperature sensor; SIP, digital-analog hybrid microsystem; SoC1, main processing system-on-chip; SoC2, coprocessing system-on-chip; FPGA, field programmable gate array device; RFC1~RFC2, RF direct sampling chip; TR_1~TR_4, reconfigurable RF transceiver micro-module; FANOUT_1~FANOUT_2, lead fan-out micro-module; Bas, substrate; Bal, solder ball. Detailed implementation manners

[0044] The following uses specific specific examples to illustrate the implementation manners of the present application. Those skilled in the art can easily understand other advantages and effects of the present application from the content disclosed in this specification. The present application can also be implemented or applied through other different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that, without conflict, the following embodiments and the features in the embodiments can be combined with each other.

[0045] It should be noted that the drawings provided in the following embodiments only illustrate the basic concept of the present application in a schematic manner. Therefore, only the components related to the present application are shown in the drawings, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and ratio of each component in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0046] For the convenience of understanding the technical solutions provided by the present application, relevant terms in the present application are interpreted before the specific embodiments as follows:

[0047] RF elastic contact film: It is a flexible material used for RF applications, which can provide physical flexibility while maintaining electrical performance.

[0048] FPGA: Field programmable gate array device, which adopts a structure based on gate array. Each chip is composed of two-dimensional logic blocks, and each logic block is connected by horizontal and vertical wiring channels.

[0049] The following combines the drawings to detail the embodiments of the present application. Without conflict, the features in the following embodiments and implementation manners can be combined with each other.

[0050] To facilitate the understanding of the technical solution of this application, the structure of the existing digital-analog hybrid microsystem will be described below; please refer to Figure 1 , Figure 2 and Figure 3 , which are respectively shown as the top view, side view and bottom view of the digital-analog hybrid microsystem in an embodiment; as shown in Figure 1 and Figure 2 , the digital-analog hybrid microsystem includes: a multi-channel configurable radio frequency subsystem and a multi-functional reconfigurable processing subsystem; wherein, the multi-channel configurable radio frequency subsystem includes: reconfigurable radio frequency transceiver micro-modules (TR_1, TR_2, TR_3 and TR_4), and two radio frequency direct sampling chips (RFC1 and RFC2); the multi-functional reconfigurable processing subsystem includes: a main processing system-on-chip SoC1, a co-processing system-on-chip SoC2 and a field programmable gate array device FPGA (hereinafter referred to as "FPGA" for short); with the substrate Bas as the boundary, the digital-analog hybrid microsystem is divided into an upper structure and a lower structure; the upper structure includes: 1 main processing system-on-chip SoC1, 1 co-processing system-on-chip SoC2, 1 FPGA and 2 radio frequency direct sampling chips (RFC1 and RFC2); the lower structure includes 4 reconfigurable radio frequency transceiver micro-modules (TR_1, TR_2, TR_3 and TR_4) and 2 lead fan-out micro-modules (FANOUT_1 and FANOUT_2) to fan out the pins of each chip in the upper structure; as shown in Figure 2 and Figure 3 , the digital-analog hybrid microsystem realizes interface lead-out by using a ball grid array package, with a ball diameter of 200 μm, and the height and diameter of each solder ball are the same to ensure the flatness of the digital-analog hybrid microsystem; wherein, the multi-channel configurable radio frequency subsystem includes: 4 receive and 4 transmit reconfigurable radio frequency transceiver channels and 4 radio frequency direct sampling transceiver channels, which are respectively implemented by 4 reconfigurable radio frequency transceiver micro-modules and 2 radio frequency direct sampling chips; the multi-functional reconfigurable processing subsystem is composed of three chips, namely the main processing system-on-chip SoC1, the co-processing system-on-chip SoC and the FPGA.

[0051] In the digital-analog hybrid microsystem, the multi-channel configurable radio frequency subsystem and the multi-functional reconfigurable processing subsystem are interconnected through the FPGA. For the sampling signals of the ADC / DAC, they are transmitted through the JESD-204B interface. The FPGA forms a configuration bus through interfaces such as SPI / GPIO to configure the multi-channel configurable radio frequency subsystem. Inside the multi-functional reconfigurable processing subsystem, after the ADC / DAC sampling signals for communication and reconnaissance are processed inside the FPGA, they are sent to the main processing system-on-chip SoC1 and the co-processing system-on-chip SoC through internal interface signals. The ADC signal for navigation is forwarded by the FPGA to the navigation baseband of the co-processing system-on-chip SoC for processing, and then positioning and speed calculation are performed. The outside of the digital-analog hybrid microsystem includes interfaces for antennas, external local oscillators, sampling reference clocks, and external reference clocks. Among them, the interfaces for the external local oscillator, sampling reference clock, and external reference clock respectively provide the local oscillator signal for radio frequency up and down conversion, the sampling reference clock signal, and the working reference clock signal for the reconfigurable radio frequency transceiver micro-module TR, the first radio frequency direct sampling chip RFC1, the second radio frequency direct sampling chip RFC2, the main processing system-on-chip SoC1, and the co-processing system-on-chip SoC2. The main processing system-on-chip SoC1 and the co-processing system-on-chip SoC lead out several interfaces such as SPI, GPIO, UART, etc., as well as the JTAG interface signal of the internal processor. The main processing system-on-chip SoC1 leads out a DDR interface for running the operating system.

[0052] As can be seen from the above, the digital-analog hybrid microsystem integrates functions such as radio frequency transceiver, signal acquisition, digital-analog conversion, high-speed communication, signal processing, and communication calculation, involving many test items, and the requirements for signal quality of each test item are different. Moreover, the overall size of the digital-analog hybrid microsystem is tiny, generally less than or equal to 30mm×30mm×4mm. Therefore, in order to test the performance of each device in the digital-analog hybrid microsystem, a test signal transmission device suitable for the tiny digital-analog hybrid microsystem is needed, and it can output test signals whose signal quality meets the corresponding test requirements according to the test requirements corresponding to each test item.

[0053] To solve the above-mentioned technical problems existing in the prior art, the following embodiments of the present application provide a test signal transmission device for a digital-analog hybrid microsystem SIP. By providing vias on the test board that match the solder balls for transmitting high-frequency signals of the digital-analog hybrid microsystem, and arranging a connection component to connect the test board, including attaching a conductive film to the test board, inserting RF probes into each of the vias on the test board, and arranging an RF interface with one end connected to the conductive film and the other end for inputting and outputting RF signals, an RF channel is formed between the digital-analog hybrid microsystem and the external test equipment. Non-high-frequency test signals pass through the RF interface, are transmitted to the digital-analog hybrid microsystem through the test board and the conductive film, and the high-frequency test signals pass through the RF probes and are transmitted to the digital-analog hybrid microsystem through the conductive film, realizing the independent transmission of high-frequency signals and non-high-frequency signals, improving signal isolation, avoiding that when all signals are transmitted to the digital-analog hybrid microsystem through the test board, due to the large signal frequency span, the performance requirements for the test board are high, increasing the design and material costs of the test board, and the digital-analog hybrid microsystem can be connected to each test equipment through the test signal transmission device, facilitating various tests and helping to improve the test efficiency of the digital-analog hybrid microsystem.

[0054] Please refer to Figure 4 , which shows a schematic structural diagram of a test signal transmission device for a digital-analog hybrid microsystem provided by the present invention in an embodiment.

[0055] As Figure 4 shown, in this embodiment, the test signal transmission device for the digital-analog hybrid microsystem provided by the present invention includes:

[0056] A test board 1 for supplying power and testing the digital-analog hybrid microsystem SIP; a plurality of vias 11 are provided on the test board 1; the positions of each of the vias 11 respectively match the positions of the solder balls Bal for transmitting high-frequency signals of the digital-analog hybrid microsystem SIP;

[0057] The connection component 2 includes: a conductive film 21, a plurality of RF probes 22, and a plurality of RF interfaces (not shown); wherein, the conductive film 21 is attached to the surface of the test board 1 facing the digital-analog hybrid microsystem SIP, and is used to connect the test board 1 and the digital-analog hybrid microsystem SIP to supply power to and transmit signals to the digital-analog hybrid microsystem SIP; a plurality of conductive pins 211 are distributed on the outer surface of the conductive film 21 for mating with the corresponding solder balls bal, and the layout positions of the respective conductive pins 211 on the conductive film match the positions of the corresponding solder balls Bal on the digital-analog hybrid microsystem SIP; one end of each RF probe 22 is respectively inserted into the corresponding via 11 and connected to the conductive film 21, and the other end of each RF probe 22 is used for inputting or outputting high-frequency signals; each of the RF interfaces is distributed around the test board 1, and one end of each is connected to the conductive film 21, and the other end is used for inputting or outputting signals;

[0058] The pressing mechanism 3 is disposed on the surface of the digital-analog hybrid microsystem SIP away from the conductive film 21, and is used to press the digital-analog hybrid microsystem SIP located on the conductive film 21 after the solder balls Bal of the digital-analog hybrid microsystem SIP are aligned with the corresponding conductive pins 211 on the conductive film 21, so that the solder balls Bal of the digital-analog hybrid microsystem SIP are respectively connected to the corresponding conductive pins 211 on the conductive film 21.

[0059] Specifically, the test board 1 is connected to an external power supply, and the RF probes 22 and the RF interfaces are respectively connected to test equipment; the digital-analog hybrid microsystem SIP is placed in the connection area of the conductive film 21 so that the solder balls Bal of the digital-analog hybrid microsystem SIP are respectively connected to the corresponding conductive pins 211 on the conductive film 21; after the digital-analog hybrid microsystem SIP is connected to the conductive film 21, the external power supply is turned on, and the digital-analog hybrid microsystem SIP is powered on through the test board 1, and further, the test equipment is controlled to output test signals, wherein the high-frequency test signals are input into the conductive film 21 through the RF probes 22 for the digital-analog hybrid microsystem SIP to receive the high-frequency test signals; the non-high-frequency test signals are input into the test board 1 through the RF interfaces, and are transmitted to the digital-analog hybrid microsystem through the conductive film 21 for the digital-analog hybrid microsystem SIP to receive the non-high-frequency test signals; after the digital-analog hybrid microsystem SIP receives the test signals, the test signals are returned to the conductive film 21 and output through the RF interface 23; the connection area of the conductive film 21 is the area where the conductive film 21 is connected to the digital-analog hybrid microsystem SIP.

[0060] Optionally, the frequency of the high-frequency signal is greater than or equal to 10 GHz; the high-frequency signal includes: the high-frequency test signal.

[0061] Exemplarily, the high-frequency signal includes: a radio frequency local oscillator signal and / or a high-frequency radio frequency signal.

[0062] Optionally, the frequency of the non-high-frequency signal is less than 10 GHz; the non-high-frequency signal includes: the non-high-frequency test signal.

[0063] Exemplarily, the non-high-frequency signal includes: a low-frequency radio frequency signal and a control signal.

[0064] Optionally, the test board 1 includes: a PCB board.

[0065] Optionally, the test board 1 includes: a power supply module, a communication module, a test module and a storage module; wherein,

[0066] The power supply module includes: a power interface and a voltage conversion unit; the power interface is used to connect the external power supply; the input end of the voltage conversion unit is connected to the power interface, and the output ends of the voltage conversion unit are respectively connected to the components of the digital-analog hybrid microsystem SIP, so as to convert the voltage of the external power supply and output the corresponding conversion voltage to the components of the digital-analog hybrid microsystem SIP;

[0067] The communication module includes: an Internet port, a USB interface and / or an FMC connector; the Internet port is used to transmit digital signal data; the USB interface is used to transmit communication signals; the FMC connector connects the remaining pins of the main processing system on chip SoC1 and the FPGA, and is used to transmit spare data; the remaining pins are pins that are not used in the current test.

[0068] The test module includes: a debugging interface, a current detection chip, a clock chip and / or a balanced-unbalanced converter; the debugging interface is used to connect to a host computer so that the host computer can perform online debugging and / or program loading on the chip in the digital-analog hybrid microsystem SIP; the current detection chip is connected to the current path between the DC / DC unit and each device of the digital-analog hybrid microsystem SIP, and is used to obtain current data of each device in the digital-analog hybrid microsystem SIP; the clock chip is used to generate, maintain and distribute clock signals, provide stable clock signals for each device in the digital-analog hybrid microsystem SIP, and ensure the clock synchronization of each linked device in the digital-analog hybrid microsystem SIP; the balanced-unbalanced converter is used to achieve impedance matching of radio frequency signals and reduce common mode noise.

[0069] The storage module includes: a FLASH chip and a DDR chip; the FLASH chip is used to store the configuration files of the FPGA, the main processing system-on-chip SoC1, and the coprocessing system-on-chip SoC2 in the digital-analog hybrid microsystem SIP, so that when the FPGA, the main processing system-on-chip SoC1, and the coprocessing system-on-chip SoC2 are powered on again after a power-off, they can automatically load the corresponding configuration files and execute programs without having to download the configuration files through an external interface again; the DDR chip is used to store digital signals.

[0070] Exemplarily, the power interface includes: a female socket matching a 4mm banana plug.

[0071] Exemplarily, the voltage conversion unit includes: a switching power supply chip.

[0072] Exemplarily, the debugging interface includes: a JTAG debugging interface.

[0073] Exemplarily, the current detection chip is an INA226 chip; the clock chip is an HMC7043 chip.

[0074] Exemplarily, the FLASH chip includes: a W25Q128 chip, a W25Q256 chip, or an MT25QL256 chip; the DDR chip is an MT41J512M4 chip.

[0075] Exemplarily, 16 vias 11 are formed on the test board 1, corresponding to the reconfigurable radio frequency transceiver micro-module.

[0076] Optionally, as Figure 5 shown, a first conductive layer 12 is plated on the surface of the test board 1 facing the digital-analog hybrid microsystem SIP for grounding the test board 1; a second conductive layer 13 is plated on the inner wall of the via 11, and the second conductive layer 13 is connected to the first conductive layer 12, and the radio frequency probe 22 is connected to the second conductive layer 13 so that the radio frequency probe 22 is grounded in the same way as the test board 1; wherein, the end of the radio frequency probe 22 inserted into the via contacts the conductive film 21.

[0077] It should be noted that considering that in the measurement of high-frequency signals, the return path of the signal is crucial for maintaining signal quality. When the radio frequency probe is not grounded in the same way as the test board, it is easy to cause a poor grounding loop, resulting in noise, signal distortion, or unstable measurement results. Therefore, in this application, a conductive layer is plated on the inner wall of the test board via, and the radio frequency probe is connected to the conductive layer of the test board via to keep the radio frequency probe grounded in the same way as the test board.

[0078] Exemplarily, the materials of the first conductive layer 12 and / or the second conductive layer 13 include conductive metals such as copper and / or iron.

[0079] Optionally, a conductive glue and / or a connector are used to connect the RF probe 22 to the first conductive layer 12, so as to form a good current loop between the test board 1 and the RF probe 22, avoid local voltage differences, and thereby reduce electromagnetic interference.

[0080] Optionally, the impedance of the RF probe 22 is the same as that of the transmission cable of the RF signal, so as to improve the transmission power of the RF signal, reduce the reflection loss generated by the signal transmission in the digital-analog hybrid microsystem SIP, and reduce the signal distortion during the signal transmission process.

[0081] Exemplarily, the impedance of the RF probe 22 is 50 Ω.

[0082] Optionally, the conductive film 21 includes: a radio frequency elastic contact film.

[0083] Optionally, the RF interface includes: an RF coaxial connector.

[0084] Exemplarily, the RF interface includes: an SMA connector.

[0085] Optionally, as Figure 6 shown, the test signal transmission device further includes: a pressing mechanism 3; the pressing mechanism 3 is disposed on the surface of the digital-analog hybrid microsystem SIP away from the conductive film 21, and is used to press the digital-analog hybrid microsystem SIP located on the conductive film 21 after aligning each solder ball Bal of the digital-analog hybrid microsystem SIP with the corresponding conductive pin 211 on the conductive film 21, so that each solder ball Bal of the digital-analog hybrid microsystem SIP is respectively connected to the corresponding conductive pin 211 on the conductive film 21.

[0086] In this embodiment, by providing a pressing mechanism in the test signal transmission device to press the digital-analog hybrid microsystem, the rapid connection of each solder ball of the digital-analog hybrid microsystem to each conductive pin on the conductive film is realized, which not only ensures the connection stability between the digital-analog hybrid microsystem and the conductive film, but also improves the connection convenience between the test signal transmission device and the digital-analog hybrid microsystem, and helps to improve the test efficiency of the digital-analog hybrid microsystem.

[0087] Optionally, as Figure 7 shown, the pressing mechanism 3 includes: a mounting cavity 31, a positioning card 32, and a pressing member 33; wherein,

[0088] The installation cavity 31 is used to install and fix the test board 1; the side of the test board 1 where the conductive film 21 is attached after installation faces the digital-analog hybrid microsystem SIP; the RF interface 23 is arranged on the cavity wall of the installation cavity 31, and one end of the RF interface 23 penetrates through the cavity wall to connect the conductive film on the test board 1.

[0089] The positioning card board 32 is located on the side of the test board 1 facing the digital-analog hybrid microsystem SIP; the positioning card board 32 has a card board body 321 and a positioning card slot 322; the card board body 321 has a hollow positioning groove body for clamping the positioning card slot 322 to fix the positioning card slot 322 on the card board body 321; the length and width of the positioning card slot 322 respectively match the length and width of the connection area of the conductive film 21; the positioning card board 32 is located above the test board 1, and the position of the positioning card slot 322 matches the position of the connection area of the conductive film 21, so as to quickly position the digital-analog hybrid microsystem SIP to the connection area of the conductive film 21 by placing the digital-analog hybrid microsystem SIP in the positioning card slot 322;

[0090] The length and width of the pressing member 33 are respectively not less than the length and width of the digital-analog hybrid microsystem SIP, and are used to press the digital-analog hybrid microsystem SIP and the conductive film 21, so that each solder ball Bal of the digital-analog hybrid microsystem SIP is respectively connected to each conductive pin 211 of the conductive film 21.

[0091] Optionally, the bottom plate of the installation cavity 31 has a support portion 311 for supporting the test board 1; the height of the support portion 311 is matched with the height of the RF interface 23 on the cavity wall, so that the connection short of the RF interface 23 and the conductive film 21 are at the same or similar horizontal height, facilitating the connection between the RF interface 23 and the conductive film 21.

[0092] Optionally, the support portion 311 is a convex platform protruding from the installation bottom plate, the position of the convex platform matches the position of the connection area of the conductive film 21, and the length and width of the convex platform are respectively not less than the length and width of the connection area of the conductive film 21.

[0093] In this embodiment, by arranging the convex platform on the bottom plate of the installation cavity, a support force is provided to the digital-analog hybrid microsystem after the digital-analog hybrid microsystem is pressed, so that the digital-analog hybrid microsystem is uniformly stressed.

[0094] In one embodiment, as Figure 8As shown, the pressing member 33 includes: a pressing plate body 331; the length and width of the pressing plate body 331 are respectively not less than the length and width of the digital-analog hybrid microsystem SIP.

[0095] Optionally, the material of the pressing plate body 331 includes: a heat-conducting metal with a thermal conductivity greater than a preset thermal conductivity threshold.

[0096] Exemplarily, the preset thermal conductivity threshold is 30 W / (K · m).

[0097] Optionally, a heat-conducting silicone grease layer is disposed on the surface of the pressing plate body 331 facing the digital-analog hybrid microsystem SIP, so that the contact between the digital-analog hybrid microsystem SIP and the pressing plate body 331 is complete, ensuring that the digital-analog hybrid microsystem SIP is uniformly stressed and avoiding damage to the digital-analog hybrid microsystem SIP due to uneven stress; the thermal conductivity of the heat-conducting silicone grease layer is greater than 4 W / (K · m).

[0098] Exemplarily, the heat-conducting metal includes: copper, etc.

[0099] It should be noted that considering that there are many devices in the digital-analog hybrid microsystem SIP, when each device operates, it will generate a huge power consumption, and the miniaturized volume limit makes it difficult for the digital-analog hybrid microsystem SIP to dissipate heat by itself, and a large amount of accumulated heat will be generated during the test process, affecting the test stability; therefore, in this application, a heat-conducting metal with good heat conductivity is used to make the pressing plate body, and by arranging the surface of the pressing plate body in contact with the digital-analog hybrid microsystem SIP, the surface heat of the digital-analog hybrid microsystem SIP is quickly conducted, thereby discharging the internal accumulated heat of the digital-analog hybrid microsystem SIP.

[0100] In another embodiment, as Figure 9 shown, the pressing member 33 further includes: a plurality of movable pressing blocks 332 and a plurality of adjusting members 333; the number of the movable pressing blocks 332 is the same as the number of chips on the pressing surface of the digital-analog hybrid microsystem SIP; a plurality of placing grooves with one end closed and the other end open are formed on the pressing plate body 331 for placing each of the movable pressing blocks 332; the adjusting member 333 is used to connect the movable pressing block and the pressing plate body to adjust the distance between the movable pressing block 332 and the pressing plate body 331;

[0101] Among them, the positions of the respective movable pressing blocks 332 in the pressing plate body 331 respectively match the positions of the respective chips on the pressing surface of the digital-analog hybrid microsystem SIP, and the sizes of the respective movable pressing blocks 332 respectively match the sizes of the respective chips on the pressing surface of the digital-analog hybrid microsystem SIP; the pressing surface of the digital-analog hybrid microsystem SIP is the surface where the digital-analog hybrid microsystem SIP contacts the pressing member 33.

[0102] Optionally, the material of the movable pressing block 332 includes: a heat-conducting metal with a heat-conducting rate greater than the preset heat-conducting coefficient threshold.

[0103] Optionally, the movable pressing block 332 has a threaded hole, and the adjusting member 333 includes: a bolt and / or a screw; the internal thread of the threaded hole matches the external thread of the bolt and / or the screw.

[0104] Optionally, the test module of the test board 1 further includes: an analog-to-digital converter; as Figure 10 shown, the pressing mechanism 3 further includes: a temperature sensor 34; the temperature sensor 34 is connected to the signal input end of the analog-to-digital converter, and the signal output end of the analog-to-digital converter is connected to the FPGA; the temperature sensor 34 is embedded in the pressing plate body 331 and / or the movable pressing block 332, and is used to sense the temperature of the pressing plate body 331 and / or the movable pressing block 332, and send the sensed analog temperature information to the analog-to-digital converter, so that the analog-to-digital converter converts the temperature information into digital temperature information and sends the digital temperature information to the FPGA to monitor the internal heat accumulation situation of the digital-analog hybrid microsystem SIP in real time, and avoid the test results obtained by the digital-analog hybrid microsystem SIP being unstable due to excessive internal heat accumulation.

[0105] In this embodiment, by setting the independently floating movable pressing blocks, according to the actual heights of the respective chips in the digital-analog hybrid microsystem SIP, the heights of the respective movable pressing blocks protruding from the pressing plate body are respectively adjusted, so that the pressing member applies uniform pressure to the chips with different heights in the digital-analog hybrid microsystem SIP. While making the respective solder balls of the digital-analog hybrid microsystem SIP connected to the corresponding conductive pins 211 on the conductive film 21 respectively, it avoids damage to some chips due to excessive force, and, the pressing member can be applied to the digital-analog hybrid microsystem SIP with chips of different heights, improving the application universality of the test signal transmission device.

[0106] Optionally, the pressing member 33 further includes: a housing; the housing is elastically connected to the pressing plate body 331 to provide a pressing force throughout the pressing process of the digital-analog hybrid microsystem SIP.

[0107] Exemplarily, the pressing plate body 331 is elastically connected to the housing through a spring.

[0108] Optionally, the first end of the housing is hinged to the positioning card slot 322, and the second end of the housing is movably connected to the positioning card slot 322. After the digital-analog hybrid microsystem SIP is placed in the positioning card slot 322, the second end of the housing is connected to the positioning card slot 322 by closing the housing and the positioning card slot 322; the first end of the housing and the second end of the housing are two opposite ends of the housing.

[0109] Exemplarily, the first end of the housing is hinged to the positioning groove body through a hinge, and the second end of the housing is movably connected to the positioning groove body through a buckle.

[0110] In this embodiment, by setting the first end of the housing to be hinged to the positioning card slot and the second end of the housing to be movably connected to the positioning card slot, while quickly pressing the digital-analog hybrid microsystem SIP, it can be avoided that during the test process, the tester manually presses the pressing member throughout the process, greatly improving the test efficiency and test convenience of the digital-analog hybrid microsystem SIP.

[0111] Please refer to Figure 11 and Figure 12 , which respectively show the first test result graph and the second test result graph obtained by performing the first test and the second test on the digital-analog hybrid microsystem SIP by the test signal transmission device based on the digital-analog hybrid microsystem SIP; wherein, the signal input / output ends of the radio frequency probe 22 and the signal input / output ends of the radio frequency interface 23 are respectively connected to radio frequency cables, and the conductive pins of the conductive film 21, the radio frequency probe 22, and the link of the radio frequency cable to the radio frequency interface 23 form a complete signal input / output link; in the first test result graph, the signal input / output end of the radio frequency probe 22 is used as the signal input end, and the signal input / output end of the radio frequency interface 23 is used as the signal output end; in the second test result graph, the signal input / output end of the radio frequency probe 22 is used as the signal output end, and the signal input / output end of the radio frequency interface 23 is used as the signal input end;

[0112] As Figure 11 shown, the horizontal axis represents frequency, with the unit of gigahertz (GHz), and the vertical axis represents signal amplitude attenuation, with the unit of decibel (dB). Figure 11 There are 16 first test curves (RF1~RF16) in Figure 12 indicating that there are 16 signal links in the first test; as Figure 12There are 16 second test curves (RF1’~RF16’), indicating that there are 16 signal links in the second test; from Figure 11 and Figure 12 it can be seen that when the frequency of the test signal is within the range of 0 to 10 GHz, the signal amplitude attenuation corresponding to the first test curve and the second test curve is less than or equal to 1 dB. As the frequency of the test signal increases, the signal amplitude attenuation corresponding to the first test curve and the second test curve increases. When the frequency of the test signal is within the range of 30 to 40 GHz, the signal amplitude attenuation corresponding to the first test curve and the second test curve is about 3 dB. From this, it can be known that the test signal transmission device of the digital-analog hybrid microsystem SIP provided in the present application can efficiently transmit signals of different frequencies. During the signal transmission process, the signal amplitude attenuation of signals of different frequencies is small, and the maximum signal amplitude attenuation is only 3 dB, which fully verifies the feasibility and reliability of the test signal transmission device of the digital-analog hybrid microsystem SIP provided in the present application.

[0113] A test signal transmission device of a digital-analog hybrid microsystem provided in the above embodiment forms a radio frequency channel between the digital-analog hybrid microsystem and the external test device by opening vias on the test board that match the solder balls for transmitting high-frequency signals of the digital-analog hybrid microsystem, and setting a connection component to connect the test board, including fitting and setting a conductive film on the test board, inserting radio frequency probes into each of the vias on the test board, and setting a radio frequency interface with one end connected to the conductive film and the other end for inputting and outputting radio frequency signals. The non-high-frequency test signals pass through the radio frequency interface, are transmitted to the digital-analog hybrid microsystem through the test board and the conductive film, and the high-frequency test signals pass through the radio frequency probes and are transmitted to the digital-analog hybrid microsystem through the conductive film, realizing the independent transmission of high-frequency signals and non-high-frequency signals, improving the signal isolation degree, avoiding that when all signals are transmitted to the digital-analog hybrid microsystem through the test board, due to the large signal frequency span, the performance requirements for the test board are high, increasing the design and material costs of the test board, and the digital-analog hybrid microsystem can be connected to each test device through the test signal transmission device, facilitating various tests and helping to improve the test efficiency of the digital-analog hybrid microsystem.

[0114] Please refer to Figure 13 , which shows a schematic flow chart of an embodiment of a test method for a digital-analog hybrid microsystem provided by the present invention;

[0115] As Figure 13As shown, in this embodiment, for the test method of the digital-analog hybrid microsystem provided by the present invention, the test signal transmission device of the digital-analog hybrid microsystem is used to test the digital-analog hybrid microsystem; wherein, the test signal transmission device is respectively connected to a test device and a host computer; the host computer is connected to the test device, and the test method includes:

[0116] Step S1: Place the digital-analog hybrid microsystem SIP in the connection area of the conductive film 21, so that each solder ball Bal of the digital-analog hybrid microsystem SIP is respectively connected to the corresponding conductive pin 211 on the conductive film 21;

[0117] Among them, the test device includes: an external power supply, a signal source, and a spectrum analyzer.

[0118] Specifically, the test board 1 is connected to the external power supply through a wire cable, the RF probe 22 is connected to the signal source through an RF cable, and the RF interface 23 is connected to the spectrum analyzer through the RF cable; place the digital-analog hybrid microsystem SIP in the connection area of the conductive film 21, and use the pressing mechanism 3 to press the digital-analog hybrid microsystem SIP located on the conductive film 21, so that each solder ball Bal of the digital-analog hybrid microsystem SIP is respectively connected to the corresponding conductive pin 211 on the conductive film 21.

[0119] Step S2: The test device powers on the digital-analog hybrid microsystem through the test signal transmission device; the host computer controls the digital-analog hybrid microsystem to perform device configuration through the test signal transmission device to form a corresponding signal transceiver link; and, the test device generates a test signal, and transmits the test signal to the digital-analog hybrid microsystem SIP through the test signal transmission device; wherein, the high-frequency test signal is transmitted between the digital-analog hybrid microsystem SIP and the test device through the conductive film 21, the RF probe 22, and the RF interface 23; the non-high-frequency test signal is transmitted between the digital-analog hybrid microsystem SIP and the test device through the test board 1, the conductive film 21, and the RF interface 23;

[0120] Specifically, the external power supply supplies power to the test signal transmission device, so that the test signal transmission device powers on the digital-analog hybrid microsystem SIP through the conductive film; after the digital-analog hybrid microsystem SIP is powered on, the FPGA in the digital-analog hybrid microsystem SIP performs a firmware load; after the firmware loading is completed, the host computer generates a signal source control signal, a spectrum analyzer control signal, and a microsystem control signal based on the test item, and sends the signal source control signal and the spectrum analyzer control signal to the signal source and the spectrum analyzer, respectively, so that the signal source and the spectrum analyzer respectively perform the above-mentioned operations based on the corresponding control signals. The instrument configuration required for the test project is configured, and the signal source generates a corresponding test signal based on the signal source control signal; and the host computer sends the microsystem control signal to the digital-analog hybrid microsystem SIP through the test signal transmission device, so that the digital-analog hybrid microsystem SIP performs device configuration on the reconfigurable RF transceiver micromodule based on the microsystem control signal to form a corresponding signal transceiver link; the test signal is transmitted to the digital-analog hybrid microsystem SIP through the test signal transmission device, and the digital-analog hybrid microsystem SIP receives the test signal through the configured reconfigurable RF transceiver micromodule.

[0121] Step S3: After receiving the test signal, the digital-analog hybrid microsystem utilizes the signal transceiver link inside the digital-analog hybrid microsystem SIP to transmit the test signal back to the test equipment through the test signal transmission device.

[0122] Specifically, after receiving the test signal, the digital-analog hybrid microsystem SIP uses the signal transceiver link configured inside the digital-analog hybrid microsystem SIP to transmit the test signal back to the test device through the test signal transmission device; wherein the high-frequency test signal is transmitted through the conductive film 21, the radio frequency probe 22 and the radio frequency interface 23, and the non-high-frequency test signal is transmitted through the test board 1, the conductive film 21 and the radio frequency interface 23. Optionally, when the test signal transmission device includes a clamping mechanism, after placing the digital-analog hybrid microsystem SIP on the connection area of the conductive film 21, the test method further includes: using the clamping mechanism 3 to press the digital-analog hybrid microsystem SIP located on the conductive film 21.

[0123] In this embodiment, a pressing method is adopted to quickly connect the digital-analog hybrid microsystem and the test signal transmission device using a pressing mechanism, which greatly improves the test efficiency of the digital-analog hybrid microsystem.

[0124] Optionally, when the test signal transmission device includes: a temperature sensor 34 and an analog-to-digital converter, after the digital-analog hybrid microsystem SIP is powered on, the test method further includes:

[0125] The temperature sensor 34 is used to sense the temperature of the analog-digital hybrid microsystem SIP in real time, generate temperature information, and send the temperature information to the analog-to-digital converter; the analog-to-digital converter performs analog-to-digital conversion on the temperature information to obtain digital temperature information, and sends the digital temperature information to the FPGA; the FPGA transmits the digital temperature information to the host computer through the test signal transmission device, so as to monitor the temperature of the analog-digital hybrid microsystem SIP in real time during the test process.

[0126] Optionally, when the test signal transmission device includes a current detection chip, the test method further includes: using the test signal transmission device to perform electrical performance testing on the analog-digital hybrid microsystem SIP.

[0127] Optionally, the implementation manner of the electrical performance testing includes: using the current detection chip to obtain the currents of the components in the analog-digital hybrid microsystem SIP, and detecting in real time whether the currents of the components in the analog-digital hybrid microsystem SIP are normal.

[0128] Optionally, the test method further includes: directly leading out the pins of the main processing system-on-chip SoC1, the co-processing system-on-chip SoC2, and the FPGA of the analog-digital hybrid microsystem SIP to perform pin electrical performance testing on the pins of different BANKs.

[0129] A test method for an analog-digital hybrid microsystem provided in this embodiment connects the analog-digital hybrid microsystem to a test device and a host computer by using the above-mentioned test signal transmission device for the analog-digital hybrid microsystem, and uses the conductive film, the radio frequency probe, and the radio frequency interface in the test signal transmission device to transmit high-frequency test signals between the analog-digital hybrid microsystem and the test device; using the test board, the conductive film, and the radio frequency interface in the test signal transmission device to transmit non-high-frequency test signals between the analog-digital hybrid microsystem and the test device and / or the host computer. The test method can realize the independent transmission of high-frequency signals and non-high-frequency signals, improve the signal isolation degree, reduce the signal interference between the test signals during the test process, and help improve the accuracy of the test on the analog-digital hybrid microsystem.

[0130] The embodiments of the present application also provide a computer-readable storage medium. Those of ordinary skill in the art can understand that all or part of the steps in the methods of the above embodiments can be completed by instructing a processor through a program. The program can be stored in a computer-readable storage medium. The storage medium is a non-transitory medium, such as random access memory, read-only memory, flash memory, hard disk, solid-state drive, magnetic tape, floppy disk, optical disc, and any combination thereof. The above storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server or a data center integrating one or more available media. The available medium can be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium (e.g., digital video disc (DVD)), or a semiconductor medium (e.g., solid-state disk (SSD)), etc.

[0131] The embodiments of the present application can also provide a computer program product, which includes one or more computer instructions. When the computer instructions are loaded and executed on a computing device, all or part of the processes or functions described in the embodiments of the present application are generated. The computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another. For example, the computer instructions can be transmitted from a website, a computer, or a data center to another website, a computer, or a data center in a wired manner (such as coaxial cable, optical fiber, digital subscriber line (DSL)) or a wireless manner (such as infrared, wireless, microwave, etc.).

[0132] When the computer program product is executed by a computer, the computer executes the method described in the foregoing method embodiments. The computer program product can be a software installation package. In the case where the foregoing method is required, the computer program product can be downloaded and executed on the computer.

[0133] The descriptions of the processes or structures corresponding to the above respective drawings have their own emphases. For parts not detailed in a certain process or structure, reference can be made to the relevant descriptions of other processes or structures.

[0134] The above embodiments are only illustrative of the principles and effects of the present application and are not used to limit the present application. Any person familiar with this technology can make modifications or changes to the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present application should still be covered by the claims of the present application.

Claims

1. A test signal transmission device for a digital-analog hybrid microsystem, characterized in that Comprising: A test board for powering and testing a digital-analog hybrid microsystem; a plurality of vias are formed on the test board; The positions of the respective vias respectively match the positions of the solder balls for transmitting high-frequency signals of the digital-analog hybrid microsystem; A connection component, including: a conductive film, a plurality of RF probes, and a plurality of RF interfaces; wherein, the conductive film is attached to the surface of the test board facing the digital-analog hybrid microsystem; a plurality of conductive pins are distributed on the outer surface of the conductive film for mating with the corresponding solder balls, and the layout positions of the respective conductive pins on the conductive film match the positions of the corresponding solder balls on the digital-analog hybrid microsystem; one end of each RF probe is respectively inserted into the corresponding via and connected to the conductive film, and the other end of each RF probe is used for inputting or outputting high-frequency test signals; each RF interface is distributed around the test board, and one end of each is connected to the conductive film, and the other end is used for inputting or outputting non-high-frequency test signals.

2. The device according to claim 1, wherein The surface of the test board facing the digital-analog hybrid microsystem is plated with a first conductive layer for grounding the test board; the inner wall of the via is plated with a second conductive layer, and the second conductive layer is connected to the first conductive layer, and the RF probe is connected to the second conductive layer so that the grounding of the RF probe is consistent with that of the test board.

3. The device according to claim 1, characterized in that, The device further includes: A pressing mechanism for pressing the digital-analog hybrid microsystem located on the conductive film so that each solder ball of the digital-analog hybrid microsystem is respectively connected to the corresponding conductive pin on the conductive film.

4. The device according to claim 3, characterized in that The pressing mechanism includes: a mounting cavity, a positioning card board, and a pressing member; wherein, The mounting cavity is used for mounting and fixing the test board; the RF interface is arranged on the cavity wall of the mounting cavity, and one end of the RF interface passes through the cavity wall to connect the conductive film on the test board; The positioning card board is located on the surface of the test board facing the digital-analog hybrid microsystem; the positioning card board has a card board body and a positioning card slot; the card board body has a hollow positioning groove body for clamping the positioning card slot; the length and width of the positioning card slot respectively match the length and width of the connection area of the conductive film; the positioning card board is located above the test board, and the position of the positioning card slot matches the position of the connection area of the conductive film; the connection area of the conductive film is the area where the conductive film is connected to the digital-analog hybrid microsystem; The pressing member is used for pressing the digital-analog hybrid microsystem and the conductive film so that each solder ball of the digital-analog hybrid microsystem is respectively connected to each conductive pin of the conductive film.

5. The device according to claim 4, characterized in that, The bottom plate of the mounting cavity has a support portion: the height of the support portion is matched with the height of the RF interface on the cavity wall.

6. The device according to claim 4, characterized in that The pressing member includes: a pressing plate body, a movable pressing block, and an adjusting component; wherein, The length and width of the pressing plate body are respectively not less than the length and width of the digital-analog hybrid microsystem; the number of the movable pressing blocks is the same as the number of chips on the pressing surface of the digital-analog hybrid microsystem; a plurality of placing grooves with one end closed and the other end open are formed on the pressing plate body for placing the corresponding movable pressing blocks; the adjusting member is used for connecting the movable pressing block and the pressing plate body to adjust the distance between the movable pressing block and the pressing plate body; Wherein, the positions of the movable pressing blocks in the pressing plate body respectively match the positions of the chips on the pressing surface of the digital-analog hybrid microsystem; the pressing surface of the digital-analog hybrid microsystem is the surface in contact with the pressing member.

7. The device according to claim 6, characterized in that, The pressing member further includes: a housing; the housing is elastically connected to the pressing plate body.

8. The device according to claim 7, characterized in that, The first end of the housing is hinged to the positioning card slot, and the second end of the housing is movably connected to the positioning card slot; the first end and the second end of the housing are two opposite ends of the housing.

9. The device according to claim 4, wherein An analog-to-digital converter is arranged on the test board, and the pressing mechanism further includes: a temperature sensor; the temperature sensor is connected to the signal input end of the analog-to-digital converter, and the signal output end of the analog-to-digital converter is connected to the digital-analog hybrid microsystem; the temperature sensor is embedded in the pressing member for sensing the temperature of the pressing member and sending the sensed temperature information to the analog-to-digital converter for the analog-to-digital converter to convert the temperature information into digital temperature information and send the digital temperature information to the digital-analog hybrid microsystem.

10. A testing method for a digital-analog hybrid microsystem, characterized in that, Using the test signal transmission device of the digital-analog hybrid microsystem according to any one of claims 1 to 9 to test the digital-analog hybrid microsystem; wherein, the test signal transmission device is respectively connected to a test device and a host computer, and the method includes: Placing the digital-analog hybrid microsystem in the connection area of the conductive film so that each solder ball of the digital-analog hybrid microsystem is respectively connected to the corresponding conductive pin on the conductive film; The test device powers on the digital-analog hybrid microsystem through the test signal transmission device; the host computer controls the digital-analog hybrid microsystem to perform device configuration through the test signal transmission device to form a corresponding signal transceiver link; and, the test device generates a test signal and transmits the test signal to the digital-analog hybrid microsystem through the test signal transmission device; wherein, the high-frequency test signal is transmitted through the conductive film, the radio frequency probe and the radio frequency interface; the non-high-frequency test signal is transmitted through the test board, the conductive film and the radio frequency interface; After receiving the test signal, the digital-analog hybrid microsystem uses the signal transceiver link inside the digital-analog hybrid microsystem SIP to return the test signal to the test device through the test signal transmission device.

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