Method and system for extracting physical parameters of sensitive electronic device

Abstract

The invention provides a method and system for extracting physical parameters of a sensitive electronic device, and the method comprises the steps: carrying out the input and output characteristic measurement of the sensitive electronic device, so as to obtain the input and output characteristic experiment data of the sensitive electronic device; constructing a numerical physical simulation model of the sensitive electronic device by using a multi-physical field simulation tool; inputting numerical physical simulation parameters into the numerical physical simulation model of the sensitive electronic device to obtain input and output characteristic simulation data of the sensitive electronic device, and based on the input and output characteristic simulation data and the input and output characteristic experiment data, obtaining an optimal numerical physical simulation parameter of the sensitive electronic device by using a bat optimization algorithm. The method can be used for extracting numerical physical simulation model parameters of the radio frequency front-end sensitive electronic device, the accuracy of the simulation model parameters is improved, and the method has important significance on electric heating multi-physical field damage effect simulation of the sensitive electronic device under the action of strong electromagnetic pulses.

Description

Technical Field

[0001] The present invention belongs to the technical field of electromagnetic effect simulation analysis, and in particular relates to a method and system for extracting physical parameters of sensitive electronic devices. Background Art

[0002] Strong electromagnetic pulses enter the RF front end of frequency-using equipment through front-door coupling pathways such as antennas, and can easily cause damage to sensitive electronic devices in the RF front end (mainly including semiconductor devices such as diodes and transistors). The electromagnetic damage effect of strong electromagnetic pulses on sensitive electronic devices is mainly manifested in thermal damage. Establishing a simulation model of semiconductor devices and conducting thermal simulation is an effective means to analyze the damage effects of strong electromagnetic pulses on sensitive electronic devices. At present, there are two types of simulations for semiconductor devices: behavioral level simulation based on SPICE model and electrical and thermal coupling simulation based on numerical physics model. Among them, SPICE model (Simulation Program with Integrated Circuit Emphasis) is a behavioral model. The parameters of this model do not reflect the physical meaning of semiconductor devices. Instead, it regards semiconductor devices as a "black box" and uses empirical formulas to characterize the electrical behavior of the device. It cannot simulate the physical structure and operation mechanism inside the device. It can usually accurately reflect the input and output characteristics for the effect of small microwave signals, but cannot simulate the damage effect of the device under the action of strong electromagnetic pulse signals. The numerical physics model is a model that fully characterizes the geometric structure and process parameters (doping concentration and distribution) of semiconductor devices. It simulates the current-voltage relationship of the device port and the physical distribution inside the device, such as the internal potential distribution, carrier concentration distribution, carrier motion trajectory, etc., based on the transport equation satisfied by the carrier. Simulation based on this model can not only obtain the voltage circuit characteristics of the device port, but also simulate the physical distribution inside the device. The simulation results are more reliable and realistic, which plays a huge role in understanding the working mechanism of the device. Therefore, establishing a numerical physical model of semiconductor devices is of great significance for simulating and analyzing the strong electromagnetic damage effects of sensitive electronic devices.

[0003] However, since most semiconductor device manufacturing companies keep their product production process, internal structure, doping characteristics and other key parameters confidential and do not disclose them, and these data are essential key parameters for establishing device semiconductor numerical physical models. At present, in device semiconductor numerical simulation, the numerical physical model simulation parameters of typical devices are mainly obtained through theoretical analysis, selection of typical values ​​and reference query. Usually, the simulation parameters obtained through these methods are quite different from the actual parameters. The damage effect obtained by simulating the model constructed with these parameters cannot truly reflect the damage effect and damage law of sensitive electronic devices under strong electromagnetic pulses, and the actual test results are quite different.

[0004] Therefore, at this stage, there is an urgent need to develop a method and system for extracting physical parameters of sensitive electronic devices to solve the above-mentioned technical problems. Summary of the invention

[0005] In order to solve the above technical problems, the present invention proposes a technical solution of a method, system, electronic device and storage medium for extracting physical parameters of sensitive electronic devices to solve the above technical problems.

[0006] The first aspect of the present invention discloses a method for extracting physical parameters of a sensitive electronic device, the method comprising:

[0007] Step S1: measuring the input-output characteristics of a sensitive electronic device to obtain experimental data of the input-output characteristics of the sensitive electronic device;

[0008] Step S2: Use a multi-physics simulation tool to build a numerical physical simulation model of sensitive electronic devices;

[0009] Step S3: inputting numerical physical simulation parameters into the numerical physical simulation model of the sensitive electronic device to obtain input-output characteristic simulation data of the sensitive electronic device, and obtaining the optimal numerical physical simulation parameters of the sensitive electronic device based on the input-output characteristic simulation data and the input-output characteristic experimental data and using a bat optimization algorithm.

[0010] In the method of the first aspect of the present invention, step S1 specifically comprises: measuring the input and output characteristics of the sensitive electronic device through a pre-built electronic device input and output electrical characteristics test system to obtain input and output characteristic experimental data of the sensitive electronic device, and using the input and output characteristic experimental data as a parameter optimization target of the numerical physical simulation model of the sensitive electronic device.

[0011] The method of the first aspect of the present invention, the step S2 specifically comprises: using the multi-physics field simulation tool to establish the geometric structure of the sensitive electronic device, setting the physical equations describing the physical working process of the sensitive electronic device, and setting the boundary conditions of the sensitive electronic device, so as to construct a numerical physical simulation model of the sensitive electronic device.

[0012] In the method of the first aspect of the present invention, step S3 specifically comprises:

[0013] Step S31: inputting numerical physics simulation parameters into the numerical physics simulation model of the sensitive electronic device to obtain input and output characteristic simulation data of the sensitive electronic device;

[0014] Step S32: calculating the error value between the input-output characteristic simulation data and the input-output characteristic experimental data;

[0015] Step S33: if the error value does not meet the preset condition, obtaining optimized numerical physics simulation parameters based on the input-output characteristic simulation data and the input-output characteristic experimental data and using a bat optimization algorithm;

[0016] Step S34: repeating steps S31-S33 until the error value satisfies the preset condition, so as to obtain the optimal numerical physical simulation parameters of the sensitive electronic device.

[0017] In the method of the first aspect of the present invention, the specific optimization process of the bat optimization algorithm is:

[0018] Step S331: determining the number of parameters to be optimized, and using the parameters to be optimized as bat position information;

[0019] Step S332: Initialize the minimum pulse frequency f min , maximum pulse frequency f max , mutation probability Q, population size m, pulse frequency f, speed v and population evolution generation G;

[0020] Step S333: Initialize the position information of m bats, and m bats form a population: Assuming there are n parameters to be optimized, the position information of the i-th bat can be expressed as shown in formula (1), x ij is the jth parameter of the i-th bat;

[0021] x i =(x i1 ,x i2 ,…,x ij ,…,x in ), i=1,2,…,m (1)

[0022] Step S334: Set the i-th bat x i The various parameters of the sensitive electronic device are input into the numerical physical simulation model to complete the meshing, so as to simulate and obtain the i-th bat x i The input and output characteristic simulation data are used to complete the simulation of m bats in sequence;

[0023] Step S335: calculating the fitness of each bat in the population according to the input-output characteristic experimental data and the input-output characteristic experimental data;

[0024] Step S336: comparing and determining the minimum fitness among the m bats, and recording the position information of the best bat corresponding to the minimum fitness;

[0025] Step S337: Generate new speed and position information to update the bat position;

[0026] Step S338: Determine whether the number of iterations exceeds the population evolution generation G. If not, repeat steps S333-S337 until the population evolution generation G is met, and output the optimal bat position information, that is, the optimized numerical physics simulation model parameters.

[0027] In the method of the first aspect of the present invention, the fitness calculation formula is expressed as:

[0028]

[0029] Among them, q is the total amount of input and output VI electrical characteristics experimental data, I_sim t I_exp is the tth current data of the input and output VI electrical characteristics simulation data, t It is the tth current data of the input and output VI electrical characteristics experimental data.

[0030] In the method of the first aspect of the present invention, the speed update formula is expressed as:

[0031]

[0032] The updating formula of the position information is expressed as:

[0033]

[0034] in, and is the flight speed of the i-th bat in the z+1th and zth generations, and are the location information of the i-th bat in the z+1th generation and the zth generation, respectively, i is the pulse frequency of the i-th bat, and β is a random number uniformly distributed in (0,1).

[0035] A second aspect of the present invention discloses an electrothermal multi-physics field simulation method for a sensitive electronic device, the method comprising:

[0036] Adopting a sensitive electronic device physical parameter extraction method as described in any one of the first aspects of the present invention to obtain optimal numerical physical simulation parameters of the sensitive electronic device;

[0037] Bringing the optimal numerical physics simulation parameters into a numerical physics simulation model of a sensitive electronic device to carry out an electrothermal multi-physics field simulation of the sensitive electronic device;

[0038] The simulated breakdown voltage characteristics of the sensitive electronic device are compared with the nominal values ​​to evaluate the accuracy of the simulation results.

[0039] The third aspect of the present invention discloses a system for extracting physical parameters of sensitive electronic devices, the system comprising:

[0040] A first processing module is configured to measure input-output characteristics of a sensitive electronic device to obtain input-output characteristic experimental data of the sensitive electronic device;

[0041] A second processing module is configured to construct a numerical physics simulation model of a sensitive electronic device using a multi-physics simulation tool;

[0042] The third processing module is configured to input the numerical physical simulation parameters into the numerical physical simulation model of the sensitive electronic device to obtain the input-output characteristic simulation data of the sensitive electronic device, and obtain the optimal numerical physical simulation parameters of the sensitive electronic device based on the input-output characteristic simulation data and the input-output characteristic experimental data and using a bat optimization algorithm.

[0043] In the system of the third aspect of the present invention, the first processing module is specifically configured to: measure the input and output characteristics of the sensitive electronic device through a pre-built electronic device input and output electrical characteristics test system to obtain input and output characteristic experimental data of the sensitive electronic device, and use the input and output characteristic experimental data as a parameter optimization target for the numerical physical simulation model of the sensitive electronic device.

[0044] In the system of the third aspect of the present invention, the second processing module is specifically configured to: use the multi-physics field simulation tool to establish the geometric structure of the sensitive electronic device, set the physical equations describing the physical working process of the sensitive electronic device, and set the boundary conditions of the sensitive electronic device to construct a numerical physical simulation model of the sensitive electronic device.

[0045] In the system of the third aspect of the present invention, the third processing module is specifically configured as follows:

[0046] Inputting numerical physics simulation parameters into the numerical physics simulation model of the sensitive electronic device to obtain input and output characteristic simulation data of the sensitive electronic device;

[0047] Calculating an error value between the input-output characteristic simulation data and the input-output characteristic experimental data;

[0048] If the error value does not meet the preset conditions, obtaining optimized numerical physics simulation parameters based on the input-output characteristic simulation data and the input-output characteristic experimental data and using a bat optimization algorithm;

[0049] The aforementioned process is repeated until the error value satisfies the preset condition, so as to obtain the optimal numerical physical simulation parameters of the sensitive electronic device.

[0050] In the system of the third aspect of the present invention, the specific optimization process of the bat optimization algorithm in the third processing module is:

[0051] Step S431: determining the number of parameters to be optimized, and using the parameters to be optimized as bat position information;

[0052] Step S432: Initialize the minimum pulse frequency f min , maximum pulse frequency f max , mutation probability Q, population size m, pulse frequency f, speed v and population evolution generation G;

[0053] Step S433: Initialize the position information of m bats, and m bats form a population: Assuming there are n parameters to be optimized, the position information of the i-th bat can be expressed as shown in formula (1), x ij is the jth parameter of the i-th bat;

[0054] x i =(x i1 ,x i2 ,…,x ij ,…,x in ), i=1,2,…,m (1)

[0055] Step S434: Set the i-th bat x i The various parameters of the sensitive electronic device are input into the numerical physical simulation model to complete the meshing, so as to simulate and obtain the i-th bat x i The input and output characteristic simulation data are used to complete the simulation of m bats in sequence;

[0056] Step S435: calculating the fitness of each bat in the population according to the input-output characteristic experimental data and the input-output characteristic experimental data;

[0057] Step S436: comparing and determining the minimum fitness among the m bats, and recording the position information of the best bat corresponding to the minimum fitness;

[0058] Step S437: Generate new speed and position information to update the bat position;

[0059] Step S438: Determine whether the number of iterations exceeds the population evolution generation G. If not, repeat steps S433-S437 until the population evolution generation G is met, and output the optimal bat position information, that is, the optimized numerical physics simulation model parameters.

[0060] In the system of the third aspect of the present invention, the fitness calculation formula is expressed as:

[0061]

[0062] Among them, q is the total amount of input and output VI electrical characteristics experimental data, I_sim t I_exp is the tth current data of the input and output VI electrical characteristics simulation data, t It is the tth current data of the input and output VI electrical characteristics experimental data.

[0063] In the system of the third aspect of the present invention, the speed update formula is expressed as:

[0064]

[0065] The updating formula of the position information is expressed as:

[0066]

[0067] in, and is the flight speed of the i-th bat in the z+1th and zth generations, and are the location information of the i-th bat in the z+1th generation and the zth generation, respectively, i is the pulse frequency of the i-th bat, and β is a random number uniformly distributed in (0,1).

[0068] A fourth aspect of the present invention discloses an electrothermal multi-physics field simulation system for sensitive electronic devices, the system comprising:

[0069] Sensitive electronic device physical parameter extraction system, used to obtain the optimal numerical physical simulation parameters of sensitive electronic devices;

[0070] A fifth processing module, used for bringing the optimal numerical physics simulation parameters into a numerical physics simulation model of a sensitive electronic device to carry out an electrothermal multi-physics field simulation of the sensitive electronic device;

[0071] The sixth processing module is used to compare the breakdown voltage characteristic of the sensitive electronic device obtained by simulation with the nominal value to evaluate the accuracy of the simulation result.

[0072] The sensitive electronic device physical parameter extraction scheme proposed in the present invention has the following advantages:

[0073] A method for extracting parameters of sensitive electronic devices of the present invention establishes a bat optimization algorithm, takes the input and output electrical characteristics of sensitive electronic devices as the optimization target, performs error calculation on the simulated input and output electrical characteristic data of sensitive electronic devices and the experimental measurement data, and then updates the parameter value of the sensitive electronic device, brings the updated value into the simulation model and simulates to obtain new input and output data, repeats the cycle until the required error is met, and obtains the optimized numerical physical model parameters of the sensitive electronic device to carry out the simulation of the strong electromagnetic pulse damage effect of the sensitive electronic device. The method for extracting parameters of sensitive electronic devices of the present invention can be used for extracting the parameters of the numerical physical simulation model of the radio frequency front-end sensitive electronic devices, improves the accuracy of the simulation model parameters, and is of great significance for carrying out the simulation of the electrothermal multi-physical field damage effect of sensitive electronic devices under the action of strong electromagnetic pulses. BRIEF DESCRIPTION OF THE DRAWINGS

[0074] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0075] Figure 1 is a flow chart of a method for extracting physical parameters of a sensitive electronic device according to an embodiment of the present invention;

[0076] Figure 2 A schematic diagram of a method for extracting physical parameters of a sensitive electronic device according to an embodiment of the present invention;

[0077] Figure 3 A flowchart of parameter optimization of a numerical physics simulation model of a sensitive electronic device based on a bat optimization algorithm according to an embodiment of the present invention;

[0078] Figure 4 Schematic diagram of measurement results of VI characteristic curve of PIN diode according to an embodiment of the present invention;

[0079] Figure 5 A schematic diagram showing a comparison between simulation and experimental results of a PIN diode VI characteristic curve according to an embodiment of the present invention;

[0080] Figure 6 A schematic diagram of a simulation of reverse breakdown characteristics of a PIN diode according to an embodiment of the present invention;

[0081] Figure 7 is a temperature distribution diagram inside a PIN diode according to an embodiment of the present invention;

[0082] Figure 84 is a structural diagram of a system for extracting physical parameters of a sensitive electronic device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0083] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution in the embodiment of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiment of the present invention. Obviously, the described embodiment is a part of the embodiment of the present invention, not all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0084] A first aspect of an embodiment of the present invention discloses a method for extracting physical parameters of a sensitive electronic device. Figure 1 FIG. 1 is a flow chart of a method for extracting physical parameters of a sensitive electronic device according to an embodiment of the present invention. Figure 1 As shown, the method includes:

[0085] Step S1: measuring the input-output characteristics of a sensitive electronic device to obtain experimental data of the input-output characteristics of the sensitive electronic device;

[0086] Step S2: Use a multi-physics simulation tool to build a numerical physical simulation model of sensitive electronic devices;

[0087] Step S3: inputting numerical physical simulation parameters into the numerical physical simulation model of the sensitive electronic device to obtain input-output characteristic simulation data of the sensitive electronic device, and obtaining the optimal numerical physical simulation parameters of the sensitive electronic device based on the input-output characteristic simulation data and the input-output characteristic experimental data and using a bat optimization algorithm.

[0088] In step S1, the input-output characteristics of a sensitive electronic device are measured to obtain experimental data of the input-output characteristics of the sensitive electronic device.

[0089] In some embodiments, step S1 in the method of the present invention is specifically: measuring the input and output characteristics of the sensitive electronic device through a pre-built electronic device input and output electrical characteristics test system to obtain input and output characteristic experimental data of the sensitive electronic device, and using the input and output characteristic experimental data as a parameter optimization target of the numerical physical simulation model of the sensitive electronic device.

[0090] Specifically, by building an electronic device input and output electrical characteristics test system to measure the input and output characteristics of sensitive electronic devices, the input and output VI electrical characteristics experimental data are obtained and used as the optimization target of the parameters of the numerical physical simulation model of sensitive electronic devices.

[0091] In step S2, a multi-physics simulation tool is used to construct a numerical physics simulation model of a sensitive electronic device.

[0092] In some embodiments, step S2 in the method of the present invention is specifically: using the multi-physics field simulation tool to establish the geometric structure of the sensitive electronic device, setting the physical equations describing the physical working process of the sensitive electronic device, and setting the boundary conditions of the sensitive electronic device to construct a numerical physical simulation model of the sensitive electronic device.

[0093] Specifically, a multi-physics field simulation tool COMSOL is used to construct a numerical physical simulation model of sensitive electronic devices, including establishing the geometric structure of the sensitive electronic devices, setting physical equations describing the physical working process of the sensitive electronic devices, including the Poisson equation, current density equation, current continuity equation, heat conduction equation, etc., and setting boundary conditions of the sensitive electronic devices.

[0094] In step S3, the numerical physical simulation parameters are input into the numerical physical simulation model of the sensitive electronic device to obtain input-output characteristic simulation data of the sensitive electronic device, and the optimal numerical physical simulation parameters of the sensitive electronic device are obtained based on the input-output characteristic simulation data and the input-output characteristic experimental data and using a bat optimization algorithm.

[0095] In some embodiments, step S3 in the method of the present invention specifically includes:

[0096] Step S31: inputting numerical physics simulation parameters into the numerical physics simulation model of the sensitive electronic device to obtain input and output characteristic simulation data of the sensitive electronic device;

[0097] Step S32: calculating the error value between the input-output characteristic simulation data and the input-output characteristic experimental data;

[0098] Step S33: if the error value does not meet the preset condition, obtaining optimized numerical physics simulation parameters based on the input-output characteristic simulation data and the input-output characteristic experimental data and using a bat optimization algorithm;

[0099] Step S34: repeating steps S31-S33 until the error value satisfies the preset condition, so as to obtain the optimal numerical physical simulation parameters of the sensitive electronic device.

[0100] For details, see Figure 2As shown, after measuring the input-output characteristic curve of the sensitive electronic device, that is, the input-output characteristic experimental data, it is used as the optimization target, and then the bat optimization algorithm is used to optimize the physical parameters of the sensitive electronic device. The optimization process specifically includes initializing the physical parameters (that is, setting the initialized numerical physical simulation parameters), bringing in the parameters to simulate and solve the input-output characteristic simulation data (that is, inputting the numerical physical simulation parameters into the numerical physical simulation model of the sensitive electronic device to obtain the input-output characteristic simulation data of the sensitive electronic device), calculating the error between the simulation data and the experimental data (that is, calculating the error value between the input-output characteristic simulation data and the input-output characteristic experimental data), optimizing the physical parameters (that is, if the error value does not meet the preset conditions or does not meet the requirements, then based on the input-output characteristic simulation data and the input-output characteristic experimental data and using the bat optimization algorithm to obtain the optimized numerical physical simulation parameters), and finally using the optimized physical parameters to carry out electrothermal multi-physics field simulation to verify the accuracy of parameter extraction.

[0101] In some embodiments, the specific optimization process of the bat optimization algorithm in the method of the present invention is:

[0102] Step S331: determining the number of parameters to be optimized, and using the parameters to be optimized as bat position information;

[0103] Step S332: Initialize the minimum pulse frequency f min , maximum pulse frequency f max , mutation probability Q, population size m, pulse frequency f, speed v and population evolution generation G;

[0104] Step S333: Initialize the position information of m bats, and m bats form a population: Assuming there are n parameters to be optimized, the position information of the i-th bat can be expressed as shown in formula (1), x ij is the jth parameter of the i-th bat;

[0105] x i =(x i1 ,x i2 ,…,x ij ,…,x in ), i=1,2,…,m (1)

[0106] Step S334: Set the i-th bat x i The various parameters of the sensitive electronic device are input into the numerical physical simulation model to complete the meshing, so as to simulate and obtain the i-th bat x i The input and output characteristic simulation data are used to complete the simulation of m bats in sequence;

[0107] Step S335: calculating the fitness of each bat in the population according to the input-output characteristic experimental data and the input-output characteristic experimental data;

[0108] Step S336: comparing and determining the minimum fitness among the m bats, and recording the position information of the best bat corresponding to the minimum fitness;

[0109] Step S337: Generate new speed and position information to update the bat position;

[0110] Step S338: Determine whether the number of iterations exceeds the population evolution generation G. If not, repeat steps S333-S337 until the population evolution generation G is met, and output the optimal bat position information, that is, the optimized numerical physics simulation model parameters.

[0111] In some embodiments, the fitness calculation formula in the method of the present invention is expressed as:

[0112]

[0113] Among them, q is the total amount of input and output VI electrical characteristics experimental data, I_sim t I_exp is the tth current data of the input and output VI electrical characteristics simulation data, t It is the tth current data of the input and output VI electrical characteristics experimental data.

[0114] In some embodiments, the speed update formula in the method of the present invention is expressed as:

[0115]

[0116] The updating formula of the position information is expressed as:

[0117]

[0118] in, and is the flight speed of the i-th bat in the z+1th and zth generations, and are the location information of the i-th bat in the z+1th generation and the zth generation, respectively, i is the pulse frequency of the i-th bat, and β is a random number uniformly distributed in (0,1).

[0119] For details, see Figure 3 As shown, the optimization process of the physical parameters of the sensitive electronic device in this embodiment is as follows: the parameters to be optimized may be the geometric parameters of the electronic device (such as the length of the P region, the N region, the device thickness, etc.) and the doping concentration of the P region, the N region, and the PN junction depth, etc. The optimization process is divided into the following steps:

[0120] ① Determine the number of parameters to be optimized, and use the parameters to be optimized as bat position information;

[0121] ② Initialize the minimum pulse frequency f in the bat optimization algorithm min and the maximum value f max , mutation probability Q, population size m, pulse frequency f, speed v, population evolution generation G and other parameters;

[0122] ③ Initialize the position information of m bats. M bats form a population. Assuming there are n parameters to be optimized, the position information of the i-th bat can be expressed as shown in formula (1), x ij is the jth parameter of the i-th bat;

[0123] x i =(x i1 ,x i2 ,…,x ij ,…,x in ), i=1,2,…,m (1)

[0124] ④ The i-th bat x i The various parameters are input into the numerical physical simulation model of sensitive electronic devices, the mesh is divided, the VI characteristic curve is simulated, the simulation voltage and the experimental voltage value are kept consistent, the VI electrical characteristic simulation data obtained by simulation is stored, and the simulation of m bats is completed;

[0125] ⑤ Calculate the fitness of each bat in the population based on the VI electrical characteristics experimental data and the VI electrical characteristics simulation data. The fitness fit calculation formula is shown in formula (2). According to formula (2), the fitness of m bats is calculated. Where q is the total amount of VI electrical characteristics experimental data, I_sim t is the tth current data of the VI electrical characteristics simulation data, I_exp t This is the tth current data of the VI electrical characteristics experiment data.

[0126]

[0127] ⑥ Compare the minimum fitness among m bats and record the location information x of the minimum fitness, i.e. the optimal bat best (x best1 ,x best2 ,…,x bestj ,…,x bestn ).

[0128] ⑦ Generate new speed and position information. The speed and position update formulas are shown in equations (3) to (4), where and is the flight speed of the i-th bat in the z+1th and zth generations, and are the location information of the i-th bat in the z+1th generation and the zth generation, respectively, i is the pulse frequency of the i-th bat, and β is a random number uniformly distributed in (0,1).

[0129]

[0130] ⑧ Determine whether the maximum number of iterations G is exceeded. If not, repeat steps ③ to ⑦ until the maximum number of iterations G is met, and output the optimal bat position information, that is, the optimized parameters of the numerical physical simulation model of sensitive electronic devices.

[0131] The method of the embodiment of the present invention is further described below by taking a PIN diode as an example:

[0132] Step 1: Use a semiconductor parameter analyzer to measure the IV characteristic curve of the PIN diode. Connect the two wires of the semiconductor parameter analyzer to the probe interfaces that contact the anode and cathode of the PIN diode respectively. Connect the two probes to the anode and cathode of the PIN diode respectively to obtain the target VI characteristic curve of the PIN diode. The measurement results are as follows: Figure 4 shown.

[0133] Step 2: Use the semiconductor module and heat transfer module of CMOSOL simulation software to build a numerical physics simulation model of sensitive electronic devices.

[0134] Step 3: Use the bat optimization algorithm to extract the parameters of the PIN diode numerical physical simulation model according to the target VI characteristic curve of the PIN diode. The bat position information is the four parameters of the PIN diode N region length, P region length, PIN diode thickness, and PN junction depth. The population size is set to 15, the population evolution generation is 600, the mutation probability is 0.6, the minimum pulse frequency is 0, and the maximum value is 0.1. The randomly initialized PIN diode N region length, P region length, PIN diode thickness, and PN junction depth initial value parameters are input into the PIN diode numerical physical simulation model established in COMSOL in step 2 to simulate the simulated VI characteristic curve of the PIN diode. The population fitness is calculated based on the simulation results, and the population is updated. The parameters of the PIN diode numerical physical simulation model extracted after iterative optimization are shown in Table 1 below. The PIN diode VI characteristic curve obtained by simulating the optimized PIN diode numerical physical simulation model parameters is compared with the experimental test. Figure 5 shown.

[0135] Table 1 Parameters of the PIN diode numerical physical simulation model extracted based on the bat optimization algorithm

[0136]

[0137] Step 4: Input the parameters of the PIN diode numerical physical simulation model optimized in step 3 into the numerical physical simulation model established using COMSOL in step 2, conduct an electrothermal multi-physics simulation of the PIN diode, apply a step voltage signal of 0 to -200V to the anode of the PIN diode, and simulate the transient current characteristics of the PIN diode as shown in Figure 6 As shown in the figure, the breakdown voltage of the PIN diode obtained by simulation is about 196V, which is 8.89% different from the true value (the nominal breakdown voltage of the diode is 180V). The internal temperature distribution of the PIN diode obtained by simulation is as follows: Figure 7 As shown, the temperature on both sides of the anode of the PIN diode is relatively high, reaching above 440K, and there is a risk of thermal breakdown.

[0138] In summary, a method for extracting parameters of sensitive electronic devices according to an embodiment of the present invention establishes a bat optimization algorithm, takes the input and output electrical characteristics of sensitive electronic devices as the optimization target, calculates the error between the simulated input and output electrical characteristic data of sensitive electronic devices and the experimental measurement data, and then updates the parameter value of the sensitive electronic device, brings the updated value into the simulation model and simulates to obtain new input and output data, repeats the cycle until the required error is met, and obtains the optimized numerical physical model parameters of the sensitive electronic device to carry out the simulation of the strong electromagnetic pulse damage effect of the sensitive electronic device. The method for extracting parameters of sensitive electronic devices according to an embodiment of the present invention can be used to extract the parameters of the numerical physical simulation model of the RF front-end sensitive electronic devices, improves the accuracy of the simulation model parameters, and is of great significance for carrying out the simulation of the electrothermal multi-physical field damage effect of sensitive electronic devices under the action of strong electromagnetic pulses.

[0139] A second aspect of an embodiment of the present invention discloses an electrothermal multi-physics field simulation method for a sensitive electronic device, the method comprising:

[0140] The optimal numerical physical simulation parameters of the sensitive electronic device are obtained by using a method for extracting physical parameters of a sensitive electronic device as described in any one of the first aspects of the embodiments of the present invention;

[0141] Bringing the optimal numerical physics simulation parameters into a numerical physics simulation model of a sensitive electronic device to carry out an electrothermal multi-physics field simulation of the sensitive electronic device;

[0142] The simulated breakdown voltage characteristics of the sensitive electronic device are compared with the nominal values ​​to evaluate the accuracy of the simulation results.

[0143] See also Figure 8 As shown, the third aspect of the present invention discloses a system 100 for extracting physical parameters of a sensitive electronic device, and the system 100 comprises:

[0144] The first processing module 10 is configured to measure the input-output characteristics of the sensitive electronic device to obtain input-output characteristic experimental data of the sensitive electronic device;

[0145] The second processing module 20 is configured to construct a numerical physical simulation model of a sensitive electronic device using a multi-physics simulation tool;

[0146] The third processing module 30 is configured to input the numerical physical simulation parameters into the numerical physical simulation model of the sensitive electronic device to obtain the input-output characteristic simulation data of the sensitive electronic device, and obtain the optimal numerical physical simulation parameters of the sensitive electronic device based on the input-output characteristic simulation data and the input-output characteristic experimental data and using a bat optimization algorithm.

[0147] In some embodiments, the first processing module 10 in the system of the present invention is specifically configured to: measure the input and output characteristics of the sensitive electronic device through a pre-built electronic device input and output electrical characteristics test system to obtain input and output characteristic experimental data of the sensitive electronic device, and use the input and output characteristic experimental data as a parameter optimization target for the numerical physical simulation model of the sensitive electronic device.

[0148] In some embodiments, the second processing module 20 in the system of the present invention is specifically configured to: use the multi-physics field simulation tool to establish the geometric structure of the sensitive electronic device, set the physical equations describing the physical working process of the sensitive electronic device, and set the boundary conditions of the sensitive electronic device to construct a numerical physical simulation model of the sensitive electronic device.

[0149] In some embodiments, the third processing module 30 in the system of the present invention is specifically configured as follows:

[0150] Inputting numerical physics simulation parameters into the numerical physics simulation model of the sensitive electronic device to obtain input and output characteristic simulation data of the sensitive electronic device;

[0151] Calculating an error value between the input-output characteristic simulation data and the input-output characteristic experimental data;

[0152] If the error value does not meet the preset conditions, obtaining optimized numerical physics simulation parameters based on the input-output characteristic simulation data and the input-output characteristic experimental data and using a bat optimization algorithm;

[0153] The aforementioned process is repeated until the error value satisfies the preset condition, so as to obtain the optimal numerical physical simulation parameters of the sensitive electronic device.

[0154] In some embodiments, the specific optimization process of the bat optimization algorithm in the third processing module 30 of the system of the present invention is:

[0155] Step S431: determining the number of parameters to be optimized, and using the parameters to be optimized as bat position information;

[0156] Step S432: Initialize the minimum pulse frequency f min , maximum pulse frequency f max , mutation probability Q, population size m, pulse frequency f, speed v and population evolution generation G;

[0157] Step S433: Initialize the position information of m bats, and m bats form a population: Assuming there are n parameters to be optimized, the position information of the i-th bat can be expressed as shown in formula (1), x ij is the jth parameter of the i-th bat;

[0158]

[0159] Step S434: Set the i-th bat x i The various parameters of the sensitive electronic device are input into the numerical physical simulation model to complete the meshing, so as to simulate and obtain the i-th bat x i The input and output characteristic simulation data are used to complete the simulation of m bats in sequence;

[0160] Step S435: calculating the fitness of each bat in the population according to the input-output characteristic experimental data and the input-output characteristic experimental data;

[0161] Step S436: comparing and determining the minimum fitness among the m bats, and recording the position information of the best bat corresponding to the minimum fitness;

[0162] Step S437: Generate new speed and position information to update the bat position;

[0163] Step S438: Determine whether the number of iterations exceeds the population evolution generation G. If not, repeat steps S433-S437 until the population evolution generation G is met, and output the optimal bat position information, that is, the optimized numerical physics simulation model parameters.

[0164] In some embodiments, the fitness calculation formula in the system of the present invention is expressed as:

[0165]

[0166] Among them, q is the total amount of input and output VI electrical characteristics experimental data, I_sim tI_exp is the tth current data of the input and output VI electrical characteristics simulation data, t It is the tth current data of the input and output VI electrical characteristics experimental data.

[0167] In some embodiments, the speed update formula in the system of the present invention is expressed as:

[0168]

[0169] The updating formula of the position information is expressed as:

[0170]

[0171] in, and is the flight speed of the i-th bat in the z+1th and zth generations, and are the location information of the i-th bat in the z+1th generation and the zth generation, respectively, i is the pulse frequency of the i-th bat, and β is a random number uniformly distributed in (0,1).

[0172] A fourth aspect of the present invention discloses an electrothermal multi-physics field simulation system for sensitive electronic devices, the system comprising:

[0173] A sensitive electronic device physical parameter extraction system 100 is used to obtain optimal numerical physical simulation parameters of sensitive electronic devices;

[0174] A fifth processing module, used for bringing the optimal numerical physics simulation parameters into a numerical physics simulation model of a sensitive electronic device to carry out an electrothermal multi-physics field simulation of the sensitive electronic device;

[0175] The sixth processing module is used to compare the breakdown voltage characteristic of the sensitive electronic device obtained by simulation with the nominal value to evaluate the accuracy of the simulation result.

[0176] Please note that the technical features of the above embodiments can be combined arbitrarily. In order to make the description concise, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification. The above embodiments only express several implementation methods of the present application, and their descriptions are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that for ordinary technicians in this field, without departing from the concept of the present application, several variations and improvements can be made, which all belong to the scope of protection of the present application. Therefore, the scope of protection of the patent in this application shall be based on the attached claims.

[0177] The above are preferred embodiments of the present invention. It should be pointed out that, for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as within the scope of protection of the present invention.

Claims

1. A method for extracting physical parameters of sensitive electronic devices, characterized in that: The method comprises: Step S1: measuring the input-output characteristics of a sensitive electronic device to obtain experimental data of the input-output characteristics of the sensitive electronic device; Step S2: Use a multi-physics simulation tool to build a numerical physical simulation model of sensitive electronic devices; Step S3: inputting numerical physical simulation parameters into the numerical physical simulation model of the sensitive electronic device to obtain input-output characteristic simulation data of the sensitive electronic device, and obtaining the optimal numerical physical simulation parameters of the sensitive electronic device based on the input-output characteristic simulation data and the input-output characteristic experimental data and using a bat optimization algorithm.

2. A method for extracting physical parameters of sensitive electronic devices according to claim 1, characterized in that: The step S1 specifically includes: measuring the input and output characteristics of the sensitive electronic device through a pre-built electronic device input and output electrical characteristics test system to obtain input and output characteristic experimental data of the sensitive electronic device, and using the input and output characteristic experimental data as a parameter optimization target of the numerical physical simulation model of the sensitive electronic device.

3. A method for extracting physical parameters of sensitive electronic devices according to claim 1, characterized in that: The step S2 specifically includes: using the multi-physics field simulation tool to establish the geometric structure of the sensitive electronic device, setting the physical equations describing the physical working process of the sensitive electronic device, and setting the boundary conditions of the sensitive electronic device, so as to construct a numerical physical simulation model of the sensitive electronic device.

4. A method for extracting physical parameters of sensitive electronic devices according to claim 1, characterized in that: It is characterized in that The step S3 specifically includes: Step S31: inputting numerical physics simulation parameters into the numerical physics simulation model of the sensitive electronic device to obtain input and output characteristic simulation data of the sensitive electronic device; Step S32: calculating the error value between the input-output characteristic simulation data and the input-output characteristic experimental data; Step S33: if the error value does not meet the preset condition, obtaining optimized numerical physics simulation parameters based on the input-output characteristic simulation data and the input-output characteristic experimental data and using a bat optimization algorithm; Step S34: repeating steps S11-S33 until the error value satisfies the preset condition, so as to obtain the optimal numerical physical simulation parameters of the sensitive electronic device.

5. A method for extracting physical parameters of sensitive electronic devices according to claim 4, characterized in that: The specific optimization process of the bat optimization algorithm is as follows: Step S331: determining the number of parameters to be optimized, and using the parameters to be optimized as bat position information; Step S332: Initialize the minimum pulse frequency f min , maximum pulse frequency f max , mutation probability Q, population size m, pulse frequency f, speed v and population evolution generation G; Step S333: Initialize the position information of m bats, and m bats form a population: Assuming there are n parameters to be optimized, the position information of the i-th bat can be expressed as shown in formula (1), x ij is the jth parameter of the i-th bat; x i =(x i1 ,x i2 ,…,x ij ,…,x in ),i=1,2,…,m (1) Step S334: Set the i-th bat x i The various parameters of the sensitive electronic device are input into the numerical physical simulation model to complete the meshing, so as to simulate and obtain the i-th bat x i The input and output characteristic simulation data are used to complete the simulation of m bats in sequence; Step S335: calculating the fitness of each bat in the population according to the input-output characteristic experimental data and the input-output characteristic experimental data; Step S336: comparing and determining the minimum fitness among the m bats, and recording the position information of the best bat corresponding to the minimum fitness; Step S337: Generate new speed and position information to update the bat position; Step S338: Determine whether the number of iterations exceeds the population evolution generation G. If not, repeat steps S333-S337 until the population evolution generation G is met, and output the optimal bat position information, that is, the optimized numerical physics simulation model parameters.

6. A method for extracting physical parameters of a sensitive electronic device according to claim 5, characterized in that: The fitness calculation formula is expressed as: Among them, q is the total amount of input and output VI electrical characteristics experimental data, I_sim t I_exp is the tth current data of the input and output VI electrical characteristics simulation data, t It is the tth current data of the input and output VI electrical characteristics experimental data.

7. A method for extracting physical parameters of a sensitive electronic device according to claim 5, characterized in that: The updating formula of the speed is expressed as: The updating formula of the position information is expressed as: in, and is the flight speed of the i-th bat in the z+1th and zth generations, and are the location information of the i-th bat in the z+1th generation and the zth generation, respectively, i is the pulse frequency of the i-th bat, and β is a random number uniformly distributed in (0,1).

8. An electrothermal multi-physics field simulation method for sensitive electronic devices, characterized in that: The method comprises: Obtaining optimal numerical physical simulation parameters of sensitive electronic devices using a method for extracting physical parameters of sensitive electronic devices as described in any one of claims 1 to 7; Bringing the optimal numerical physics simulation parameters into a numerical physics simulation model of a sensitive electronic device to carry out an electrothermal multi-physics field simulation of the sensitive electronic device; The simulated breakdown voltage characteristics of the sensitive electronic device are compared with the nominal values ​​to evaluate the accuracy of the simulation results.

9. A system for extracting physical parameters of sensitive electronic devices, characterized in that: The system comprises: A first processing module is configured to measure input-output characteristics of a sensitive electronic device to obtain input-output characteristic experimental data of the sensitive electronic device; A second processing module is configured to construct a numerical physics simulation model of a sensitive electronic device using a multi-physics simulation tool; The third processing module is configured to input the numerical physical simulation parameters into the numerical physical simulation model of the sensitive electronic device to obtain the input-output characteristic simulation data of the sensitive electronic device, and obtain the optimal numerical physical simulation parameters of the sensitive electronic device based on the input-output characteristic simulation data and the input-output characteristic experimental data and using a bat optimization algorithm.

10. An electrothermal multi-physics field simulation system for sensitive electronic devices, characterized in that: The system comprises: Sensitive electronic device physical parameter extraction system, used to obtain the optimal numerical physical simulation parameters of sensitive electronic devices; A fourth processing module is used to bring the optimal numerical physical simulation parameters into the numerical physical simulation model of the sensitive electronic device to carry out the electric and thermal multi-physical field simulation of the sensitive electronic device; The fifth processing module is used to compare the breakdown voltage characteristic of the sensitive electronic device obtained by simulation with the nominal value to evaluate the accuracy of the simulation result.

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