Display panel and display device

Abstract

The invention provides a display panel and a display device. The display panel comprises a plurality of sub-pixels, each sub-pixel comprises a pixel driving circuit, a light-emitting device and a storage circuit which are connected, the light-emitting device is configured to be in a non-light-emitting state, the pixel driving circuit is configured to be in a non-working state, the light-emitting device charges the storage circuit, and the light-emitting device is configured to be in a light-emitting state. The pixel driving circuit or / and the storage circuit provides driving current for the light-emitting device; according to the display panel, the storage circuits are arranged in the sub-pixels, the light-emitting devices can convert received light energy into electric energy in the non-light-emitting state and charge the storage capacitors, the storage circuits can provide required driving currents for the light-emitting devices when the light-emitting devices are configured to be in the light-emitting state, self-power supply of the display panel is achieved, and the display effect is improved. The power consumption of the product during display is reduced, and the cruising ability of the product is improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a display device. Background Art

[0002] Organic Light-Emitting Diode (OLED) is a new type of current-type semiconductor light-emitting device that displays light by controlling the carriers of the device and exciting organic materials.

[0003] In current OLED display panels, the luminous efficiency of the luminescent material is an important indicator of product life. However, the improvement in the luminous efficiency of the current luminescent materials has reached its upper limit. Therefore, how to improve the battery life of the product is a problem that current OLED display panels need to solve. Summary of the invention

[0004] The present application provides a display panel and a display device to improve the technical problem of low battery life of existing OLED display panels.

[0005] To solve the above-mentioned problems, the technical solutions provided by this application are as follows:

[0006] The present application proposes a display panel, which includes a plurality of sub-pixels, each of which includes:

[0007] Pixel driving circuit;

[0008] A light emitting device connected to the pixel driving circuit;

[0009] A storage circuit connected to the light emitting device and the pixel driving circuit;

[0010] Among them, the light-emitting device is configured in a non-light-emitting state, the pixel driving circuit is configured in a non-working state, and the light-emitting device charges the storage circuit; the light-emitting device is configured in a light-emitting state, and the pixel driving circuit and / or the storage circuit provide a driving current to the light-emitting device.

[0011] Optionally, the storage circuit includes:

[0012] a first control transistor, wherein a first electrode of the first control transistor is electrically connected to an anode of the light emitting device;

[0013] An energy storage capacitor, wherein a first electrode plate of the energy storage capacitor is electrically connected to a second electrode of the first control transistor, and a second electrode plate of the energy storage capacitor is electrically connected to a cathode of the light emitting device;

[0014] Wherein, the light emitting device is configured to be in a non-light emitting state, the first control transistor is turned on, and the light emitting device charges the energy storage capacitor;

[0015] The light-emitting device is configured to be in a light-emitting state, the first control transistor is turned on, the energy storage capacitor is discharged and the light-emitting device provides a driving current; or, the light-emitting device is configured to be in a light-emitting state, the first control transistor is turned off, and the pixel driving circuit provides a driving current to the light-emitting device; or, the light-emitting device is configured to be in a light-emitting state, the first control transistor is turned on, and the pixel driving circuit and the energy storage capacitor simultaneously provide a driving current to the light-emitting device.

[0016] Optionally, the storage circuit further includes:

[0017] a second control transistor, wherein a first electrode of the second control transistor is electrically connected to the first plate of the energy storage capacitor, and a second electrode of the second control transistor is electrically connected to a pixel driving circuit of an adjacent sub-pixel;

[0018] Among them, the multiple sub-pixels include a first sub-pixel and a second sub-pixel, the light-emitting device of the first sub-pixel is configured to be in a non-light-emitting state, the light-emitting device of the second sub-pixel is configured to be in a light-emitting state, the first control transistor of the first sub-pixel is turned off, the second control transistor of the first sub-pixel is turned on, the energy storage capacitor of the first sub-pixel is discharged and provides a driving current to the light-emitting device of the second sub-pixel.

[0019] Optionally, the storage circuit further includes:

[0020] A voltage monitoring unit, one end of the voltage monitoring unit is electrically connected to the first electrode of the energy storage capacitor, and the other end of the voltage monitoring unit is electrically connected to the second electrode of the first control transistor.

[0021] Optionally, the plurality of sub-pixels include a first sub-pixel, a second sub-pixel and a third sub-pixel, the light emitting color of the light emitting device of the first sub-pixel is red, the light emitting color of the light emitting device of the second sub-pixel is green, and the light emitting color of the light emitting device of the third sub-pixel is blue;

[0022] Among them, the capacitance of the energy storage capacitor in the third sub-pixel is greater than the capacitance of the energy storage capacitor in the second sub-pixel, and the capacitance of the energy storage capacitor in the third sub-pixel is greater than the capacitance of the energy storage capacitor in the first sub-pixel.

[0023] Optionally, the material of the light emitting device includes a direct bandgap semiconductor.

[0024] Optionally, the light emitting device comprises an anode layer, a hole functional layer, a light emitting layer, an electron functional layer and a cathode layer which are stacked;

[0025] The direct bandgap semiconductor is located in one of the hole functional layer, the light emitting layer, and the electron functional layer.

[0026] Optionally, the hole functional layer includes a hole injection layer and a hole transport layer, and the electron functional layer includes an electron injection layer and an electron transport layer;

[0027] The direct bandgap semiconductor is located in the light-emitting layer, the LUMO energy barrier of the hole transport layer is smaller than that of the light-emitting layer, and the LUMO energy barrier of the electron transport layer is larger than that of the light-emitting layer.

[0028] Optionally, the absolute value of the difference between the LUMO energy level barrier of the hole transport layer and the LUMO energy level barrier of the light-emitting layer is 0.2eV to 0.4eV, and the absolute value of the LUMO energy level barrier of the electron transport layer and the LUMO energy level barrier of the light-emitting layer is 0.2eV to 0.4eV.

[0029] The present application also proposes a display device, which includes the above-mentioned display panel.

[0030] Other features and advantages of the present application will be described in detail in the subsequent detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application, and those skilled in the art can obtain other drawings based on these drawings without creative work.

[0032] In order to more completely understand the present application and its beneficial effects, the following description will be given in conjunction with the accompanying drawings, wherein the same figure numbers represent the same parts in the following description.

[0033] Figure 1 A simplified structural diagram of a display panel provided in an embodiment of the present application;

[0034] Figure 2 A film layer diagram of a display panel provided in an embodiment of the present application;

[0035] Figure 3 A first structural diagram of a light-emitting functional layer in a display panel provided in an embodiment of the present application;

[0036] Figure 4 A second structural diagram of the light-emitting functional layer in the display panel provided in an embodiment of the present application;

[0037] Figure 5A first circuit diagram of a sub-pixel in a display panel provided in an embodiment of the present application;

[0038] Figure 6 A pixel driving circuit diagram in a display panel provided in an embodiment of the present application;

[0039] Figure 7 A second circuit diagram of a sub-pixel in a display panel provided in an embodiment of the present application;

[0040] Figure 8 A circuit diagram of three sub-pixels in a display panel provided in an embodiment of the present application. DETAILED DESCRIPTION

[0041] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0042] See also Figures 1 to 8 The present application proposes a display panel 100, which includes a plurality of sub-pixels PX, each of which includes a pixel driving circuit PL, a light-emitting device EL connected to the pixel driving circuit PL, and a storage circuit SL connected to the light-emitting device EL and the pixel driving circuit PL.

[0043] In this embodiment, the light-emitting device EL is configured in a non-luminous state, the pixel driving circuit PL is configured in a non-working state, and the light-emitting device EL charges the storage circuit SL; the light-emitting device EL is configured in a luminous state, and the pixel driving circuit PL and / or the storage circuit SL provide a driving current to the light-emitting device EL.

[0044] The present application sets a storage circuit SL in the sub-pixel PX, and the light-emitting device EL can convert the received light energy into electrical energy and charge the storage capacitor when it is configured in a non-light-emitting state. The storage circuit SL can provide the required driving current to the light-emitting device EL when the light-emitting device EL is configured in a light-emitting state, thereby realizing self-power supply of the display panel 100, reducing the power consumed by the product during display, and improving the battery life of the product.

[0045] The technical solution of the present application is now described in conjunction with specific embodiments.

[0046] See also Figure 1, the display panel 100 includes a display area AA and a non-display area NA disposed adjacent to the display area AA. Optionally, the non-display area NA surrounds the display area AA, so that the display area AA is surrounded by the non-display area NA. The display area AA is an area in the display panel 100 for performing a display function, and a plurality of sub-pixels PX are disposed therein to realize the display function. The non-display area NA may be a frame area of ​​the display panel 100, and a functional component may be disposed therein to assist the sub-pixels PX in the display area AA to perform display.

[0047] See also Figure 1 The lower side of the display area AA is provided with a binding terminal, which can be connected to an external circuit, and transmits the signal input by the external circuit to the data line, thereby driving the display panel 100 to display the picture. For example, the binding terminal can be bound and connected to a chip or a flip chip film, etc., to provide power and driving signals for the display panel 100.

[0048] See also Figure 2 The display panel 100 may include a base substrate 10, an array layer 20 disposed on the base substrate 10, a pixel layer 30 disposed on the array layer 20, a light-emitting functional layer 40 and an encapsulation layer 50, a color filter layer 60 disposed on the encapsulation layer 50, and a cover layer 70 disposed on the color filter layer 60.

[0049] In this embodiment, the material of the base substrate 10 may be glass, quartz, polyimide or other materials; for example, when the display panel 100 is a flexible panel, the material of the base substrate 10 may be a flexible material such as polyimide, or may be composed of a stacked film layer of a flexible material and an inorganic material; when the display panel 100 is a rigid panel, the material of the base substrate 10 may be a rigid material such as glass or quartz.

[0050] In this example, see Figure 2 The array layer 20 may include a plurality of thin film transistors, which may be of an etch-stop type, a back-channel etch type, or may be divided into a bottom-gate thin film transistor, a top-gate thin film transistor, etc. according to the position of the gate electrode and the active layer AS, without any specific limitation. For example, Figure 2The thin film transistor shown in the figure is a top-gate thin film transistor, which may include an active layer AS arranged on the base substrate 10, a first gate insulating layer 202 arranged on the active layer AS, a first gate layer GE1 arranged on the first gate insulating layer 202, a second gate insulating layer 203 arranged on the first gate layer GE1, a second gate layer GE2 arranged on the second gate insulating layer 203, a first interlayer insulating layer 204 arranged on the second gate layer GE2, a second interlayer insulating layer 205 arranged on the first interlayer insulating layer 204, a first source-drain layer SD1 arranged on the second interlayer insulating layer 205, a third interlayer insulating layer 201 arranged on the first source-drain layer SD1, a first planar layer 206 arranged on the third interlayer insulating layer 201, a second source-drain layer SD2 arranged on the first planar layer 206, a second planar layer 207 arranged on the second source-drain layer SD2, and a third planar layer 208 arranged on the second planar layer 207.

[0051] It should be noted that the number of source and drain layers can be set according to the requirements of wiring space. For example, the source and drain layers of the present application can be two layers. At the same time, the number of gate layers can be set according to the requirements of wiring space and capacitance. For example, the gate layers of the present application can be two layers.

[0052] It should be noted that the first gate insulating layer 202, the second gate insulating layer 203, the first interlayer insulating layer 204, the second interlayer insulating layer 205 and the third interlayer insulating layer 201 can all be inorganic materials composed of elements such as nitrogen, silicon, oxygen, and aluminum, for example, a single layer or multiple layers of stacked inorganic film layers composed of one of silicon nitride, silicon oxide, and aluminum oxide.

[0053] See also Figure 2 The pixel layer 30 may include a first pixel definition portion 310 and a second pixel definition portion 320 . The first pixel definition portion 310 is disposed on a side of the third flat layer 208 away from the base substrate 10 , and the second pixel definition portion 320 is disposed on a surface of the first pixel definition portion 310 away from the base substrate 10 .

[0054] It should be noted that since the light-emitting layer 402 of the present application is prepared using an inkjet printing process, in order to reduce the accuracy of inkjet printing, the first pixel definition portion 310 of the present application may include a plurality of first pixel dams 311 that are staggered horizontally and vertically, and the first pixel dams 311 that are staggered horizontally and vertically enclose a plurality of pixel openings corresponding to sub-pixels. The second pixel definition portion 320 includes a plurality of second pixel dams 321 in a horizontal or vertical direction, and the plurality of sub-pixels between two adjacent second pixel dams 321 have the same color, so that in the inkjet printing process, the plurality of sub-pixels between two adjacent second pixel dams 321 can be printed simultaneously along the direction of the second pixel dams 321, thereby reducing the accuracy of inkjet printing and improving the process efficiency.

[0055] In this embodiment, since the second pixel dam 321 mainly serves to isolate sub-pixels of different colors, the thickness of the second pixel dam 321 of the present application can be greater than the thickness of the first pixel dam 311, that is, the thickness of the first pixel definition portion 310 of the present application is less than the thickness of the second pixel definition portion 320.

[0056] It should be noted that the materials of the first planar layer 206 , the second planar layer 207 , the third planar layer 208 , the first pixel defining portion 310 and the second pixel defining portion 320 may all be positive organic materials.

[0057] See also Figures 2 to 4 The light-emitting functional layer 40 may include an anode layer 401 disposed on the third flat layer 208, a hole functional layer 40a disposed on the anode layer 401, a light-emitting layer 402 disposed on the hole functional layer 40a, an electronic functional layer 40b disposed on the light-emitting layer 402, and a cathode layer 403 disposed on the electronic functional layer 40b. The anode layer 401 includes a plurality of anodes corresponding to the pixel openings one by one, and the light-emitting layer 402 may include a plurality of light-emitting portions corresponding to the plurality of anodes one by one, and the anodes corresponding to the light-emitting portions, the electronic functional layer 40b, the hole functional layer 40a and the cathode constitute the light-emitting device EL of the present application.

[0058] It should be noted that the hole functional layer 40 a includes a hole injection layer 404 and a hole transport layer 405 , and the electron functional layer 40 b includes an electron injection layer 406 and an electron transport layer 407 .

[0059] See also Figure 2 The encapsulation layer 50 covers the pixel layer 30 and continuously covers multiple pixel openings and multiple light-emitting portions; the encapsulation layer 50 includes a first inorganic encapsulation layer 501, an organic encapsulation layer 502, and a second inorganic encapsulation layer 503 which are sequentially stacked.

[0060] See also Figure 2 The color filter layer 60 includes a plurality of color resists 610 and light shielding units 620 disposed on both sides of the color resists 610 , and one color resist 610 corresponds to one light-emitting portion.

[0061] See also Figure 2 The cover layer 70 is disposed on a side of the color filter layer 60 away from the base substrate 10 . The cover layer 70 may be a glass cover or may be formed directly on the color filter layer 60 .

[0062] It should be noted that the display panel 100 of the present application may further include a touch layer (not shown), and the touch layer may be disposed between the encapsulation layer 50 and the cover layer 70 .

[0063] It should be noted that, since the third flat layer 208 is disposed on the second flat layer 207 , the third flat layer 208 is disposed to further adjust the flatness of the film layer. Therefore, the thickness of the third flat layer 208 of the present application can be less than the thickness of the second flat layer 207 and the first flat layer 206 .

[0064] It should be noted that the material of the light emitting device EL of the present application may include a direct bandgap semiconductor, such as a semiconductor material such as gallium arsenide, indium phosphide or perovskite.

[0065] In this embodiment, the direct bandgap semiconductor may be located in one of the hole functional layer 40a, the light emitting layer 402, and the electron functional layer 40b. For example, the direct bandgap semiconductor may be located in the hole functional layer 40a, which is equivalent to providing a film layer 408 including a direct bandgap semiconductor between the hole injection layer 404 and the hole transport layer 405, see Figure 3 Alternatively, the direct bandgap semiconductor may be located in the light emitting layer 402, see Figure 4 .

[0066] It should be noted that when the light-emitting device EL is configured to be in a light-emitting state, the holes generated by the anode enter the light-emitting layer 402 through the hole functional layer 40a, and the electrons generated by the cathode enter the light-emitting layer 402 through the electron functional layer 40b, and the holes and electrons combine in the light-emitting layer 402 to emit light; at the same time, since the material of the light-emitting device EL of the present application includes a direct bandgap semiconductor, when the light-emitting device EL is configured to be in a non-light-emitting state, the light-emitting layer 402 can absorb light and convert it into electrical energy, and transmit electrons to the cathode of the light-emitting device EL and holes to the anode, and the electrons in the cathode and the holes in the anode are respectively transmitted to different plates of the energy storage capacitor Csl in the storage circuit SL to store the electrical energy generated by the light-emitting device EL.

[0067] It should be noted that the light converted into electric energy by the light emitting device EL may be ambient light or light generated when an adjacent light emitting device EL emits light.

[0068] In this embodiment, Figure 4 Taking the structure in as an example, the direct bandgap semiconductor is located in the light-emitting layer 402. Since the light-emitting device EL of the present application transmits electrons to the cathode and holes to the anode after absorbing light energy, the LUMO energy level barrier of the hole transport layer 405 of the present application is smaller than the LUMO energy level barrier of the light-emitting layer 402, and the LUMO energy level barrier of the electron transport layer 407 is larger than the LUMO energy level barrier of the light-emitting layer 402 to meet the transmission of holes and electrons.

[0069] In this embodiment, the absolute value of the difference between the LUMO energy level barrier of the hole transport layer 405 and the LUMO energy level barrier of the light-emitting layer 402 is 0.2eV to 0.4eV, and the absolute value of the LUMO energy level barrier of the electron transport layer 407 and the LUMO energy level barrier of the light-emitting layer 402 is 0.2eV to 0.4eV.

[0070] In this embodiment, the material of the hole transport layer 405 can be poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and the material of the electron transport layer 407 can be 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, [6,6]-phenyl-C61-butyric acid isomethyl ester, or [6,6]-phenyl-C71-butyric acid isomethyl ester.

[0071] See also Figure 5 Each of the sub-pixels PX includes a pixel driving circuit PL, a light emitting device EL connected to the pixel driving circuit PL, and a storage circuit SL connected to the light emitting device EL and the pixel driving circuit PL.

[0072] See also Figure 6 The pixel driving circuit may be a circuit structure of mTnC, such as a 3T1C, 5T1C, 7T1C, 7T2C, 8T2C, 8T3C, 8T4C or other pixel driving circuit 211a. The following embodiments are described by taking a 7T1C pixel driving circuit as an example.

[0073] See also Figure 3 The pixel driving circuit PL may include a switch transistor T2, a driving transistor T1, a compensation transistor T3, a first reset transistor T4, a second reset transistor T7, a first light emitting transistor T5, a second light emitting transistor T6 and a storage capacitor Cst.

[0074] See also Figure 3, the first electrode of the switch transistor T2 is connected to the first data signal line Data, the second electrode of the switch transistor T2 is connected to the first node A, and the switch gate T2G of the switch transistor T2 is connected to the first control signal line Pscan1; the first electrode of the driving transistor T1 is connected to the first node A, the second electrode of the driving transistor T1 is connected to the second node B, and the driving gate T1G of the driving transistor T1 is connected to the third node Q; the first electrode of the compensation transistor T3 is connected to the third node Q, the second electrode of the compensation transistor T3 is connected to the second node B, and the compensation gate T3G of the compensation transistor T3 is connected to the second control signal line Nscan1; the first electrode of the first reset transistor T4 is connected to the first reset signal line Vi1, the second electrode of the first reset transistor T4 is connected to the third node Q, and the first reset gate T4G of the first reset transistor T4 is connected to the third control signal line Nscan2 ; A first electrode of the second reset transistor T7 is connected to the second reset signal line Vi2, a second electrode of the second reset transistor T7 is connected to the anode of the light emitting device, and a second reset gate T7G of the second reset transistor T7 is connected to the fourth control signal line Pscan2; a first electrode of the first light emitting transistor T5 is connected to the high potential line VDD, a second electrode of the first light emitting transistor T5 is connected to the first node A, and a first light emitting gate T5G of the first light emitting transistor T5 is connected to the light emitting signal line EM; a first electrode of the second light emitting transistor T6 is connected to the second node B, a second electrode of the second light emitting transistor T6 is connected to the anode of the light emitting device, and a second light emitting gate T6G of the second light emitting transistor T6 is connected to the light emitting signal line EM; a first plate of the storage capacitor Cst is connected to the third node Q, a second plate of the storage capacitor Cst is connected to the high potential line VDD, and a cathode of the light emitting device is connected to the low potential line VSS.

[0075] It should be noted that the switch transistors T2 in different sub-pixels are connected to different data signal lines, and the present application only takes one of them as an example for description.

[0076] In this embodiment, the high potential line VDD is used to provide a constant high voltage level to the pixel driving circuit PL, and the low potential line VSS is used to provide a constant low voltage level to the pixel driving circuit.

[0077] In this embodiment, the switch transistor T2, the drive transistor T1, the compensation transistor T3, the first reset transistor T4, the second reset transistor T7, the first light-emitting transistor T5, and the second light-emitting transistor T6 can be one of P-type transistors or N-type transistors; for example, in this application, the switch transistor T2, the drive transistor T1, the second reset transistor T7, the third reset transistor T8, the first light-emitting transistor T5, the second light-emitting transistor T6, the compensation transistor T3 and the first reset transistor T4 are all P-type transistors.

[0078] In this embodiment, the first electrode may be one of the source and the drain, and the second electrode may be the other of the source and the drain.

[0079] It should be noted that the compensation transistor T3 and the first reset transistor T4 of the present application may both be composed of two transistors connected in series, so as to reduce the leakage current of the compensation transistor T3 and the first reset transistor T4.

[0080] It should be noted that, in order to simplify the structure, this application will Figure 6 The structure except the driving transistor T1 constitutes the driving unit DM. For details, please refer to Figure 5 structure.

[0081] See also Figure 5 The storage circuit SL includes a first control transistor T11 and a storage capacitor Csl, a first electrode of the first control transistor T11 is electrically connected to the anode of the light emitting device EL, a first plate of the storage capacitor Csl is electrically connected to the second electrode of the first control transistor T11, and a second plate of the storage capacitor Csl is electrically connected to the cathode of the light emitting device EL.

[0082] exist Figure 5 In the structure, the light emitting device EL is configured in a non-light emitting state, the first control transistor T11 is turned on, the light emitting device EL converts external light or light emitted by an adjacent light emitting device EL into electrical energy, and transmits it to the two plates of the energy storage capacitor Csl to charge the energy storage capacitor Csl.

[0083] The light-emitting device EL is configured to be in a light-emitting state. If the electric energy stored in the energy storage capacitor Csl satisfies the driving current required for the light-emitting device EL to emit light, the first control transistor T11 is turned on, the energy storage capacitor Csl is discharged, and the light-emitting device EL provides a driving current; if the electric energy stored in the energy storage capacitor Csl does not satisfy the driving current required for the light-emitting device EL to emit light, the first control transistor T11 is turned on, and the pixel driving circuit PL and the energy storage capacitor Csl simultaneously provide a driving current to the light-emitting device EL; if no electric energy is stored in the energy storage capacitor Csl, the first control transistor T11 is turned off, and the pixel driving circuit PL provides a driving current to the light-emitting device EL.

[0084] See also Figure 7 The storage circuit SL further includes a voltage monitoring unit 80, one end of which is electrically connected to the first plate of the energy storage capacitor Csl, and the other end of which is electrically connected to the second electrode of the first control transistor T11.

[0085] In this embodiment, the voltage detection unit is used to detect the capacitance in the energy storage capacitor Csl in real time; for example, the voltage detection unit transmits the capacitance in the energy storage capacitor Csl to the timing controller, and the timing controller controls the conduction and cutoff of the first control transistor T11 through the capacitance in the energy storage capacitor Csl.

[0086] See also Figure 8 The storage circuit SL further includes a second control transistor T12, a first electrode of the second control transistor T12 is electrically connected to the first plate of the energy storage capacitor Csl, and a second electrode of the second control transistor T12 is electrically connected to the pixel driving circuit PL of the adjacent sub-pixel PX.

[0087] exist Figure 8 In the structure of the present invention, the plurality of sub-pixels PX may include a first sub-pixel PX1, a second sub-pixel PX2 and a third sub-pixel PX3, and each of the sub-pixels PX may include an attached Figure 7 The structure in .

[0088] In this embodiment, the light emitting color of the light emitting device EL of the first sub-pixel PX1 is red, the light emitting color of the light emitting device EL of the second sub-pixel PX2 is green, and the light emitting color of the light emitting device EL of the third sub-pixel PX3 is blue.

[0089] The technical solution of the present application is described below by taking the first sub-pixel PX1 and the second sub-pixel PX2 as examples.

[0090] The light-emitting device EL of the first sub-pixel PX1 is configured in a non-light-emitting state, the light-emitting device EL of the second sub-pixel PX2 is configured in a non-light-emitting state, the first control transistor T11 of the first sub-pixel PX1 and the second sub-pixel PX2 is turned on, the second control transistor T12 of the first sub-pixel PX1 and the second sub-pixel PX2 is turned off, and the energy storage capacitor Csl of the first sub-pixel PX1 and the second sub-pixel PX2 is charged.

[0091] The light-emitting device EL of the first sub-pixel PX1 is configured in a non-light-emitting state, and the light-emitting device EL of the second sub-pixel PX2 is configured in a light-emitting state, the first control transistor T11 of the first sub-pixel PX1 is turned off, the second control transistor T12 of the first sub-pixel PX1 is turned on, the energy storage capacitor Csl of the first sub-pixel PX1 and the second sub-pixel PX2 is discharged and provides a driving current to the light-emitting device EL of the second sub-pixel PX2; or, the first control transistor T11 of the first sub-pixel PX1 is turned on, the second control transistor T12 of the first sub-pixel PX1 is turned off, the energy storage capacitor Csl of the second sub-pixel PX2 is discharged and provides a driving current to the light-emitting device EL of the second sub-pixel PX2, and the energy storage capacitor Csl of the first sub-pixel PX1 is continuously charged.

[0092] The light-emitting device EL of the first sub-pixel PX1 is configured to be in a light-emitting state, the non-light-emitting device EL of the second sub-pixel PX2 is configured to be in a light-emitting state, the first control transistor T11 of the first sub-pixel PX1 is turned on, the second control transistor T12 of the first sub-pixel PX1 is turned off, the energy storage capacitor Csl of the first sub-pixel PX1 is discharged and provides a driving current to the light-emitting device EL of the first sub-pixel PX1, the first control transistor T11 of the second sub-pixel PX2 is turned on, and the energy storage capacitor Csl of the second sub-pixel PX2 is continuously charged.

[0093] The light-emitting device EL of the first sub-pixel PX1 is configured to be in a light-emitting state, the light-emitting device EL of the second sub-pixel PX2 is configured to be in a light-emitting state, the first control transistor T11 of the first sub-pixel PX1 and the second sub-pixel PX2 is turned off, the second control transistor T12 of the first sub-pixel PX1 and the second sub-pixel PX2 is turned off, and the energy storage capacitor Csl of the first sub-pixel PX1 and the second sub-pixel PX2 is discharged to provide a driving current to the corresponding light-emitting device EL.

[0094] It should be noted that the light-emitting device EL in the sub-pixel PX is configured to be in a light-emitting state, and the pixel driving circuit PL in the sub-pixel PX can be adaptively turned on according to the capacitance value of the energy storage capacitor Csl. For example, taking the first sub-pixel PX1 and the second sub-pixel PX2 as examples, when the first sub-pixel PX1 is configured to be in a light-emitting state, and the energy storage capacitor Csl in the first sub-pixel PX1 or / and the energy storage capacitor Csl in the second sub-pixel PX2 meet the driving current required for the light-emitting device EL of the first sub-pixel PX1 to emit light, then the pixel driving circuit PL in the first sub-pixel PX1 can be in a non-working state, which is equivalent to the driving transistor being turned off; when the energy storage capacitor Csl in the first sub-pixel PX1 or / and the energy storage capacitor Csl in the second sub-pixel PX2 meet the driving current required for the light-emitting device EL of the first sub-pixel PX1 to emit light, which is lower than a preset value, then the pixel driving circuit PL in the first sub-pixel PX1 can be in a working state, which is equivalent to the driving transistor being turned on to provide the light-emitting device EL with the driving current required for emitting light.

[0095] In this embodiment, since the luminous efficiency of sub-pixels PX of different colors is different, for example, the luminous efficiency of the blue light-emitting device ELb is lower than that of the red light-emitting device ELr and the green light-emitting device ELg, in order to ensure the consistency of the luminous efficiency of each sub-pixel PX, the present application can increase the area of ​​the blue light-emitting device EL.

[0096] Since the area of ​​the blue light-emitting device ELb is the largest, the area of ​​light that can be absorbed by the blue light-emitting device ELb is the largest. Therefore, the blue light-emitting device ELb can output higher electric energy. The present application can increase the area of ​​the energy storage capacitor Csl in the third sub-pixel PX3, and increase the capacitance of the energy storage capacitor Csl in the third sub-pixel PX3, so that the capacitance of the energy storage capacitor Csl in the third sub-pixel PX3 is greater than the capacitance of the energy storage capacitor Csl in the second sub-pixel PX2, and the capacitance of the energy storage capacitor Csl in the third sub-pixel PX3 is greater than the capacitance of the energy storage capacitor Csl in the first sub-pixel PX1.

[0097] It should be noted that the present application also proposes a display device, which includes the above-mentioned display panel, and the display device of the present application can be any product or component with display function, such as a mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, navigator, etc.

[0098] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0099] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0100] In the above embodiments, the structures shown in the drawings are only schematic diagrams, and the specific structure of the display panel of the present application is mainly based on the description.

[0101] The embodiments, implementation methods and related technical features of the present application can be combined and replaced with each other without conflict.

[0102] The above are only preferred embodiments of the present application and do not constitute any form of limitation to the present application. However, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application are still within the scope of the technical solution of the present application.

Claims

1. A display panel, characterized in that: The method comprises a plurality of sub-pixels, each of the sub-pixels comprising: Pixel driving circuit; A light emitting device connected to the pixel driving circuit; A storage circuit connected to the light emitting device and the pixel driving circuit; Among them, the light-emitting device is configured in a non-light-emitting state, the pixel driving circuit is configured in a non-working state, and the light-emitting device charges the storage circuit; the light-emitting device is configured in a light-emitting state, and the pixel driving circuit and / or the storage circuit provide a driving current to the light-emitting device.

2. The display panel according to claim 1, characterized in that: The storage circuit comprises: a first control transistor, wherein a first electrode of the first control transistor is electrically connected to an anode of the light emitting device; An energy storage capacitor, wherein a first electrode plate of the energy storage capacitor is electrically connected to a second electrode of the first control transistor, and a second electrode plate of the energy storage capacitor is electrically connected to a cathode of the light emitting device; Wherein, the light emitting device is configured to be in a non-light emitting state, the first control transistor is turned on, and the light emitting device charges the energy storage capacitor; The light-emitting device is configured to be in a light-emitting state, the first control transistor is turned on, the energy storage capacitor is discharged and the light-emitting device provides a driving current; or, the light-emitting device is configured to be in a light-emitting state, the first control transistor is turned off, and the pixel driving circuit provides a driving current to the light-emitting device; or, the light-emitting device is configured to be in a light-emitting state, the first control transistor is turned on, and the pixel driving circuit and the energy storage capacitor simultaneously provide a driving current to the light-emitting device.

3. The display panel according to claim 2, characterized in that: The storage circuit further includes: a second control transistor, wherein a first electrode of the second control transistor is electrically connected to the first plate of the energy storage capacitor, and a second electrode of the second control transistor is electrically connected to a pixel driving circuit of an adjacent sub-pixel; Among them, the multiple sub-pixels include a first sub-pixel and a second sub-pixel, the light-emitting device of the first sub-pixel is configured to be in a non-light-emitting state, the light-emitting device of the second sub-pixel is configured to be in a light-emitting state, the first control transistor of the first sub-pixel is turned off, the second control transistor of the first sub-pixel is turned on, the energy storage capacitor of the first sub-pixel is discharged and provides a driving current to the light-emitting device of the second sub-pixel.

4. The display panel according to claim 2, characterized in that: The storage circuit further includes: A voltage monitoring unit, one end of the voltage monitoring unit is electrically connected to the first electrode of the energy storage capacitor, and the other end of the voltage monitoring unit is electrically connected to the second electrode of the first control transistor.

5. The display panel according to claim 2, characterized in that: The plurality of sub-pixels include a first sub-pixel, a second sub-pixel and a third sub-pixel, the light emitting color of the light emitting device of the first sub-pixel is red, the light emitting color of the light emitting device of the second sub-pixel is green, and the light emitting color of the light emitting device of the third sub-pixel is blue; Among them, the capacitance of the energy storage capacitor in the third sub-pixel is greater than the capacitance of the energy storage capacitor in the second sub-pixel, and the capacitance of the energy storage capacitor in the third sub-pixel is greater than the capacitance of the energy storage capacitor in the first sub-pixel.

6. The display panel according to any one of claims 1 to 5, characterized in that: The material of the light emitting device includes a direct bandgap semiconductor.

7. The display panel according to claim 6, characterized in that: The light emitting device comprises an anode layer, a hole functional layer, a light emitting layer, an electron functional layer and a cathode layer which are stacked; The direct bandgap semiconductor is located in one of the hole functional layer, the light emitting layer, and the electron functional layer.

8. The display panel according to claim 7, characterized in that: The hole functional layer includes a hole injection layer and a hole transport layer, and the electron functional layer includes an electron injection layer and an electron transport layer; The direct bandgap semiconductor is located in the light-emitting layer, the LUMO energy barrier of the hole transport layer is smaller than that of the light-emitting layer, and the LUMO energy barrier of the electron transport layer is larger than that of the light-emitting layer.

9. The display panel according to claim 8, characterized in that: The absolute value of the difference between the LUMO energy barrier of the hole transport layer and the LUMO energy barrier of the light-emitting layer is 0.2eV to 0.4eV, and the absolute value of the LUMO energy barrier of the electron transport layer and the LUMO energy barrier of the light-emitting layer is 0.2eV to 0.4eV.

10. A display device, characterized in that: The display device comprises the display panel according to any one of claims 1 to 9.

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