Full-band state switching type active frequency selective surface, antenna and communication device

Abstract

The application discloses a full-band state switching type active frequency selective surface, an antenna and communication equipment, the active frequency selective surface comprises first, second, third, fourth and fifth dielectric substrates which are sequentially stacked from top to bottom, a first capacitor layer is arranged on the top of the first dielectric substrate, and the first dielectric substrate is penetrated by a first feeding metal via, a first inductor layer is arranged on the second dielectric substrate, a second inductor layer is arranged on the fourth dielectric substrate, a second capacitor layer is arranged on the bottom of the fifth dielectric substrate, and the fifth dielectric substrate is penetrated by a second feeding metal via, the first feeding metal via is connected with the first capacitor layer at the top and connected with the first inductor layer at the bottom, the second inductor layer is connected with the second feeding metal via at the top, and the second capacitor layer is connected with the second feeding metal via at the bottom. The application realizes the function adjustment, can switch between the transmission and shielding states, and breaks the limitation of the single function of the frequency selective surface.

Description

Technical Field

[0001] This invention relates to a full-band state-switching active frequency selective surface, antenna, and communication device, belonging to the fields of wireless communication and metasurface design technology. Background Technology

[0002] With the rapid development of electronic information technology and electromagnetic pulse technology, electronic devices are becoming smaller, more integrated, more complex in function, higher in frequency, and lower in power consumption, making their electromagnetic susceptibility issues increasingly prominent. Furthermore, the electromagnetic environment in which electronic devices operate is becoming increasingly complex, facing electromagnetic pulse threats from both natural phenomena and human-induced sources. Natural electromagnetic pulse threats include electrostatic discharge and lightning; human-induced strong electromagnetic pulse threats include nuclear electromagnetic pulses from high-altitude nuclear explosions and high-power microwaves from high-power microwave weapons. Therefore, the development and research of strong electromagnetic pulse protection technologies have significant engineering application value.

[0003] Compared to frequency selective surfaces, active frequency selective surfaces (MSS) offer the advantage of flexibly switching between transmission and shielding, making them well-suited for today's complex and ever-changing electromagnetic environments. While ensuring normal signal transmission and reception, they can be configured to protect against high-power electromagnetic pulses. However, with the continuous expansion of communication frequency bands, existing active frequency selective surfaces still face design challenges in covering ultra-wide communication bands, making them insufficient to meet the requirements of modern wireless communication systems. Summary of the Invention

[0004] The first objective of this invention is to overcome the shortcomings and deficiencies of the prior art and provide a full-band state-switching active frequency selective surface. This active frequency selective surface achieves adjustable functionality and can switch between transmission and shielding states, breaking the limitation of a single function of the frequency selective surface. It can achieve ultra-wideband transmission covering the S / C / X / Ku bands, with a transmission bandwidth of up to 16 GHz, far exceeding existing broadband active frequency selective surfaces. Furthermore, it can achieve ultra-wideband shielding characteristics covering 0-18 GHz, which is superior to existing broadband active frequency selective surfaces.

[0005] A second objective of the present invention is to provide an antenna comprising the above-described active frequency selective surface.

[0006] A third objective of the present invention is to provide a communication device comprising the aforementioned antenna.

[0007] The first objective of this invention can be achieved by adopting the following technical solution:

[0008] A full-band state-switching active frequency selective surface includes a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a fourth dielectric substrate, and a fifth dielectric substrate stacked sequentially from top to bottom. A first capacitor layer is disposed on the top of the first dielectric substrate, and a first power-feed metal via is passed through the first dielectric substrate. A first inductor layer is disposed on the second dielectric substrate, a second inductor layer is disposed on the fourth dielectric substrate, and a second capacitor layer is disposed on the bottom of the fifth dielectric substrate, and a second power-feed metal via is passed through the fifth dielectric substrate. The first capacitor layer, the second capacitor layer, the first inductor layer, and the second inductor layer are all centrally symmetrical structures, forming a surface periodic unit. The first power-feed metal via is connected to the first capacitor layer above and the first inductor layer below, and the second power-feed metal via is connected to the second inductor layer above and the second capacitor layer below.

[0009] Furthermore, the first capacitor layer includes four first metal strips, two of which are arranged in parallel in the vertical direction and the other two are arranged in parallel in the horizontal direction. Two of the first metal strips are perpendicularly connected to the other two first metal strips, and each first metal strip is provided with multiple first diodes.

[0010] The second capacitor layer includes four second metal strips, two of which are arranged in parallel in the vertical direction and the other two are arranged in parallel in the horizontal direction. Two of the second metal strips are perpendicularly connected to the other two second metal strips, and each second metal strip is provided with multiple second diodes.

[0011] Furthermore, each first metal strip includes multiple first metal patches, and a first welding gap is provided between every two adjacent first metal patches, and a first diode is welded to each first welding gap;

[0012] Each second metal strip includes multiple second metal patches, and a second welding gap is provided between every two adjacent second metal patches. A second diode is welded to each second welding gap.

[0013] Furthermore, the first power supply metal via is located at the intersection of the upper left and lower right sides of the first metal strip of the first capacitor layer, and the second power supply metal via is located at the intersection of the upper right and lower left sides of the second metal strip of the second capacitor layer.

[0014] Furthermore, the first inductor layer includes two first spiral inductors, which are arranged in parallel in the vertical direction.

[0015] Furthermore, each first spiral inductor includes a first metal wire, a second metal wire, and a first metal via. The first metal wire is arranged in parallel on the top layer of the second dielectric substrate, the second metal wire is arranged in parallel on the bottom layer of the second dielectric substrate, and the first metal via connects the first metal wire and the second metal wire respectively.

[0016] Furthermore, the second inductor layer includes two second spiral inductors arranged in parallel in the horizontal direction.

[0017] Furthermore, each second spiral inductor includes a third metal wire, a fourth metal wire, and a second metal via. The third metal wire is arranged in parallel on the top layer of the fourth dielectric substrate, and the fourth metal wire is arranged in parallel on the bottom layer of the fourth dielectric substrate. The second metal via connects the third metal wire and the fourth metal wire, respectively.

[0018] Furthermore, the thickness of the first dielectric substrate and the fifth dielectric substrate is 0.5 mm to 0.6 mm, the thickness of the second dielectric substrate and the fourth dielectric substrate is 0.2 mm to 0.3 mm, and the thickness of the third dielectric substrate is 1.5 mm to 1.6 mm.

[0019] The second objective of this invention can be achieved by adopting the following technical solution:

[0020] An antenna comprising at least one of the aforementioned full-band state-switching active frequency selective surfaces.

[0021] The third objective of this invention can be achieved by adopting the following technical solution:

[0022] A communication device comprising the antenna described above.

[0023] The present invention has the following advantages over the prior art:

[0024] 1. This invention achieves the following advantages: when the active frequency selective surface is irradiated by a low-power signal, it has an ultra-wide transmission bandwidth; when high-power microwave (HPM) is incident, the active frequency selective surface has an ultra-wide stopband; it has high shielding effectiveness and energy selective transmission capabilities; it has low insertion loss transmission at low power; and it has ultra-wideband protection at high power.

[0025] 2. The present invention adopts a series-parallel hybrid power supply design, which reduces the current and voltage values ​​when deploying large-scale metasurface arrays, thus reducing the difficulty of power supply.

[0026] 3. When the diode is off, the insertion loss is less than 1.5dB in the 2-18GHz range, and when the diode is on, the shielding is greater than 15dB in the 0-18GHz range, giving it the advantages of ultra-wide passband and ultra-wide stopband. Attached Figure Description

[0027] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0028] Figure 1 This is a schematic diagram of the structure of a full-band state-switching active frequency selective surface according to an embodiment of the present invention.

[0029] Figure 2 This is a front view structural diagram of a full-band state-switching active frequency selective surface according to an embodiment of the present invention.

[0030] Figure 3 This is a schematic diagram of the first capacitor layer structure of the full-band state-switching active frequency selective surface according to an embodiment of the present invention.

[0031] Figure 4 This is a schematic diagram of the second capacitor layer structure of the full-band state-switching active frequency selective surface according to an embodiment of the present invention.

[0032] Figure 5 This is a top view of the first inductor layer structure of the full-band state-switching active frequency selective surface according to an embodiment of the present invention.

[0033] Figure 6 This is a bottom view of the first inductor layer structure of the full-band state-switching active frequency selective surface according to an embodiment of the present invention.

[0034] Figure 7 This is a top view of the second inductor layer structure of the full-band state-switching active frequency selective surface according to an embodiment of the present invention.

[0035] Figure 8 This is a bottom view of the second inductor layer structure of the full-band state-switching active frequency selective surface according to an embodiment of the present invention.

[0036] Figure 9 This is a schematic diagram of the current direction of the first capacitor layer when a DC bias is applied to the full-band state-switching active frequency selective surface according to an embodiment of the present invention.

[0037] Figure 10This is a transmission coefficient curve of the full-band state-switching active frequency selective surface in both transparent and protected states, according to an embodiment of the present invention.

[0038] Wherein, 100-first dielectric substrate, 101-first capacitor layer, 102-first metal strip, 103-first diode, 110-first power supply metal via, 200-second dielectric substrate, 201-first inductor layer, 202-first spiral inductor, 300-third dielectric substrate, 400-fourth dielectric substrate, 401-second inductor layer, 402-second spiral inductor, 500-fifth dielectric substrate, 501-second capacitor layer, 502-second metal strip, 503-second diode, 510-second power supply metal via. Detailed Implementation

[0039] To facilitate a clear description of the technical solutions in the embodiments of the present invention, the terms "first" and "second" are used to distinguish identical or similar items with essentially the same function and effect. For example, the first threshold and the second threshold are merely used to distinguish different thresholds and do not limit their order. Those skilled in the art will understand that the terms "first" and "second" do not limit the quantity or execution order, and that the terms "first" and "second" are not necessarily different.

[0040] It should be noted that in the embodiments of the present invention, the words "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in the present invention should not be construed as being more preferred or advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.

[0041] In embodiments of the present invention, "at least one" refers to one or more, and "more than one" refers to two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, and c can represent: a, b, c, a combination of a and b, a combination of a and c, a combination of b and c, or a combination of a, b, and c, where a, b, and c can be single or multiple.

[0042] Example:

[0043] like Figures 1-2As shown, this embodiment provides a full-band state-switching active frequency selective surface, which can be applied to antennas and thus to various communication devices. It includes a first dielectric substrate 100, a second dielectric substrate 200, a third dielectric substrate 300, a fourth dielectric substrate 400, and a fifth dielectric substrate 500 stacked sequentially from top to bottom. A first capacitor layer 101 is disposed on the top of the first dielectric substrate 100, and a first feed metal via 110 penetrates the first dielectric substrate 100. A first inductor layer 2 is disposed on the second dielectric substrate 200. 01. A second inductor layer 401 is disposed on the fourth dielectric substrate 400, and a second capacitor layer 501 is disposed at the bottom of the fifth dielectric substrate 500. A second power supply metal via 510 is passed through the fifth dielectric substrate 500. The first capacitor layer 101, the second capacitor layer 501, the first inductor layer 201 and the second inductor layer 202 are all centrally symmetrical structures, forming a surface periodic unit. The first power supply metal via 110 is connected to the first capacitor layer 101 above and the first inductor layer 201 below. The second power supply metal via 510 is connected to the second inductor layer 401 above and the second capacitor layer 501 below.

[0044] like Figures 1-3 As shown, the first capacitor layer 101 includes four first metal strips 102, two of which are arranged in parallel in the vertical direction and the other two are arranged in parallel in the horizontal direction. Two of the first metal strips 102 are perpendicularly connected to the other two first metal strips 102. Each first metal strip 102 is provided with four first diodes 103.

[0045] Furthermore, each first metal strip 102 includes five first metal patches, and a first welding gap is provided between every two adjacent first metal patches, that is, there are four symmetrically arranged first welding gaps. The positions of the four first welding gaps correspond one-to-one with the four first diodes 103, so that one first diode 103 is welded to each first welding gap.

[0046] like Figures 1-2 , Figure 4 As shown, the structure of the second capacitor layer 501 is the same as that of the first capacitor layer 101. It includes four second metal strips 502, two of which are arranged in parallel in the vertical direction and the other two are arranged in parallel in the horizontal direction. Two of the second metal strips 502 are perpendicularly connected to the other two. Each second metal strip 502 is provided with four second diodes 503.

[0047] Furthermore, each second metal strip 502 includes five second metal patches, and a second welding gap is provided between every two adjacent second metal patches, that is, there are four symmetrically arranged second welding gaps. The positions of the four second welding gaps correspond one-to-one with the four second diodes 503, so that one second diode 503 is welded to each second welding gap.

[0048] like Figures 1-4 As shown, the first power supply metal via 110 is located at the intersection of the upper left and lower right sides of the first metal strip 102 of the first capacitor layer 101, and the second power supply metal via 510 is located at the intersection of the upper right and lower left sides of the second metal strip 502 of the second capacitor layer 501.

[0049] like Figures 1-2 , Figures 5-6 As shown, the first inductor layer 201 includes two first spiral inductors 202, which are arranged in parallel in the vertical direction.

[0050] Furthermore, each first spiral inductor 202 includes a first metal wire, a second metal wire, and a first metal via. In this embodiment, there are twenty-eight first metal wires arranged in parallel on the top layer of the second dielectric substrate 200, and twenty-nine second metal wires arranged in parallel on the bottom layer of the second dielectric substrate 200. The first metal vias are respectively connected to the first metal wire and the second metal wire.

[0051] like Figures 1-2 , Figures 7-8 As shown, the second inductor layer 401 includes two second spiral inductors 402, which are arranged in parallel in the horizontal direction.

[0052] Furthermore, each second spiral inductor includes a third metal wire, a fourth metal wire, and a second metal via. In this embodiment, there are twenty-eight third metal wires arranged in parallel on the top layer of the fourth dielectric substrate 400, and twenty-nine fourth metal wires arranged in parallel on the bottom layer of the fourth dielectric substrate 400. The second metal vias are respectively connected to the third metal wire and the fourth metal wire.

[0053] In this embodiment, the first dielectric substrate 100, the second dielectric substrate 200, the third dielectric substrate 300, the fourth dielectric substrate 400, and the fifth dielectric substrate 500 are made of the same material, Rogers RT5880, with a dielectric constant of 2.2. The thickness of the first dielectric substrate 100 and the fifth dielectric substrate 500 is 0.508 mm, the thickness of the second dielectric substrate 200 and the fourth dielectric substrate 400 is 0.254 mm, and the thickness of the third dielectric substrate 300 is 1.524 mm. The first diode 103 and the second diode 203 are both PIN diodes.

[0054] like Figure 9 The diagram shown is a schematic of the current direction of the top capacitor layer when a DC bias is applied to the active frequency selective surface in this embodiment. It includes a 2*2 unit, where the + sign indicates that the metal patch is connected to the +6V first spiral inductor 102 through the first feed metal via 110, and the - sign indicates that the metal patch is connected to the grounded first spiral inductor 202 through the first feed metal via 110.

[0055] like Figure 10 The figure shows the transmission coefficient curves of the active frequency selective surface in this embodiment under the conditions of wave transmission and shielding. When the diode is off, the insertion loss is less than 1.5dB in the range of 2-18GHz. When the diode is on, the shielding is greater than 15dB in the range of 0-18GHz. It can be seen that the active frequency selective surface has advantages such as ultra-wide passband, ultra-wide stopband, and series-parallel feeding.

[0056] In summary, the active frequency selective surface of the present invention achieves adjustable functionality, switching between transmission and shielding states, breaking the limitation of a single function of the frequency selective surface. It can achieve ultra-wideband transmission covering the S / C / X / Ku bands, with a transmission bandwidth of 16GHz, far exceeding existing broadband active frequency selective surfaces. Furthermore, it can achieve ultra-wideband shielding characteristics covering 0-18GHz, which is superior to existing broadband active frequency selective surfaces.

[0057] Although the invention has been described herein with reference to embodiments, those skilled in the art will understand and implement other variations of the disclosed embodiments by reviewing the accompanying drawings, the disclosure, and the drawings themselves. In this specification, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude multiple components. A single processor or other unit can implement several of the functions listed in the specification. While certain measures are described in different embodiments, this does not mean that these measures cannot be combined to produce good results.

[0058] Although the invention has been described in conjunction with specific features and embodiments, it is obvious that various modifications and combinations can be made therein without departing from the spirit and scope of the invention. Accordingly, this specification and drawings are merely illustrative of the invention and are considered to cover any and all modifications, variations, combinations, or equivalents within the scope of the invention. Clearly, those skilled in the art can make various alterations and modifications to the invention without departing from its spirit and scope. Thus, if such modifications and modifications fall within the scope of the invention and its equivalents, the invention is also intended to include such modifications and modifications.

Claims

1. A full-band state-switching active frequency selective surface, characterized in that, The device comprises a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a fourth dielectric substrate, and a fifth dielectric substrate stacked sequentially from top to bottom. A first capacitor layer is disposed on the top of the first dielectric substrate, and a first power supply metal via is passed through the first dielectric substrate. A first inductor layer is disposed on the second dielectric substrate. A second inductor layer is disposed on the fourth dielectric substrate. A second capacitor layer is disposed on the bottom of the fifth dielectric substrate, and a second power supply metal via is passed through the fifth dielectric substrate. The first capacitor layer, the second capacitor layer, the first inductor layer, and the second inductor layer are all centrally symmetrical structures, forming a surface periodic unit. The first power supply metal via is connected to the first capacitor layer above and the first inductor layer below. The second power supply metal via is connected to the second inductor layer above and the second capacitor layer below. The first inductor layer includes two first spiral inductors, which are arranged in parallel in the vertical direction. Each first spiral inductor includes a first metal wire, a second metal wire, and a first metal via. The first metal wire is arranged in parallel on the top layer of the second dielectric substrate, and the second metal wire is arranged in parallel on the bottom layer of the second dielectric substrate. The first metal via connects the first metal wire and the second metal wire respectively. The second inductor layer includes two second spiral inductors arranged in parallel in the horizontal direction; each second spiral inductor includes a third metal wire, a fourth metal wire, and a second metal via, the third metal wire being arranged in parallel on the top layer of the fourth dielectric substrate, the fourth metal wire being arranged in parallel on the bottom layer of the fourth dielectric substrate, and the second metal via connecting the third metal wire and the fourth metal wire respectively.

2. The full-band state-switching active frequency selective surface according to claim 1, characterized in that, The first capacitor layer includes four first metal strips, two of which are arranged in parallel in the vertical direction and the other two are arranged in parallel in the horizontal direction. Two of the first metal strips are perpendicularly connected to the other two first metal strips. Each first metal strip is provided with multiple first diodes. The second capacitor layer includes four second metal strips, two of which are arranged in parallel in the vertical direction and the other two are arranged in parallel in the horizontal direction. Two of the second metal strips are perpendicularly connected to the other two second metal strips, and each second metal strip is provided with multiple second diodes.

3. The full-band state-switching active frequency selective surface according to claim 2, characterized in that, Each first metal strip includes multiple first metal patches, and a first welding gap is provided between every two adjacent first metal patches. A first diode is welded to each first welding gap. Each second metal strip includes multiple second metal patches, and a second welding gap is provided between every two adjacent second metal patches. A second diode is welded to each second welding gap.

4. The full-band state-switching active frequency selective surface according to claim 2, characterized in that, The first power supply metal via is located at the intersection of the upper left and lower right sides of the first metal strip of the first capacitor layer, and the second power supply metal via is located at the intersection of the upper right and lower left sides of the second metal strip of the second capacitor layer.

5. An antenna, characterized in that, It includes at least one full-band state-switching active frequency selective surface as described in any one of claims 1-4.

6. A communication device, characterized in that, Includes the antenna as described in claim 5.

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