Low dielectric glass, preparation method and application thereof, glass product and electronic device

Abstract

The invention provides low-dielectric glass, a preparation method and application thereof, a glass product and an electronic device. The low dielectric glass comprises the following components in percentage by mass: 66%-75% of SiO2, 20%-26% of B2O3, 1%-5% of P2O5, 0.5%-2% of Al2O3 and 1%-4% of R2O, and the R2O comprises one or more of Li2O, Na2O and K2O; the sum of the mass percent of SiO2 and the mass percent of B2O3 is 91%-96%. According to the invention, the types of the glass components are reasonably selected, regulated and controlled, the mass percent of each component is controlled to be within a specific range, and the components cooperate with each other and have a synergistic effect, so that the glass has the advantages of low dielectric constant, low dielectric loss, relatively low thermal expansion coefficient and the like.

Description

Technical Field

[0001] The present application relates to the field of glass technology, and in particular to a low-dielectric glass and a preparation method and application thereof, a glass product and an electronic device. Background Art

[0002] As an advanced technology with higher signal frequency, faster information transmission speed, and more stable signal transmission and reception, 5G communication technology is gradually changing people's lives. 5G signals have fast transmission speed and high frequency of use, but their signal penetration is poor, so the propagation medium material is required to have a smaller dielectric constant and signal attenuation. Low dielectric glass has a wide range of applications in the 5G information field, such as in semiconductor packaging, MEMS, IC packaging and other fields.

[0003] In addition, for the carrier glass used to manufacture ultra-thin silicon semiconductor wafers, its thermal expansion coefficient is generally required to match that of silicon, and it is required to have a small thermal expansion coefficient, a certain strength, and not be easily deformed by heat; however, the dielectric constant and dielectric loss of traditional low-dielectric glass still cannot meet application requirements and need further improvement. Summary of the invention

[0004] Based on this, one or more embodiments of the present application provide a glass with low dielectric constant, low dielectric loss, and low thermal expansion coefficient, and a preparation method and application thereof, as well as glass products and electronic devices containing the above glass.

[0005] According to a first aspect of an embodiment of the present application, a low dielectric glass is provided, comprising the following components, measured by mass percentage: SiO2 66%~75%, B2O3 20%~26%, P2O5 1%~5%, Al2O3 0.5%~2% and R2O 1%~4%, wherein the R2O comprises one or more of Li2O, Na2O and K2O; the sum of the mass percentages of the SiO2 and the B2O3 is 91%~96%.

[0006] In some embodiments, the sum of the mass percentages of the SiO2, the B2O3 and the Al2O3 is a, the mass percentage of the P2O5 is b, and the value of a / ln(10b) is 23.2-42.6;

[0007] Optionally, the value of a / ln(10b) is 28.3~35.3.

[0008] In some of the embodiments, the following components are included, by mass percentage: SiO2 68%~72%, B2O3 22%~25%, P2O5 1.5%~3%, Al2O3 1%~1.5% and R2O 1.5%~3%.

[0009] In some embodiments, the mass percentage of Li2O is 0-2%; and / or,

[0010] The mass percentage of K2O is 0-1.5%; and / or,

[0011] The mass percentage of the Na2O is 0-3%.

[0012] In some embodiments, the low dielectric glass further comprises 0.1% to 0.5% of a clarifier by mass percentage;

[0013] Optionally, the clarifier includes one or more of sodium chloride and cerium oxide.

[0014] In some embodiments, at 50°C to 300°C, the thermal expansion coefficient of the low dielectric glass is 30×10 -7 / ℃~35×10 -7 / ℃; and / or,

[0015] At 10 GHz, the dielectric constant of the low dielectric glass is ≤4.0; and / or,

[0016] Under 10 GHZ conditions, the dielectric loss of the low dielectric glass is ≤2.5×10 -3 .

[0017] According to a second aspect of an embodiment of the present application, a method for preparing low dielectric glass is provided, comprising the following steps:

[0018] Providing raw materials according to the components of the low dielectric glass described above, and mixing the raw materials to prepare a mixture;

[0019] melting the mixture to prepare molten glass;

[0020] The glass liquid is subjected to molding and annealing treatment in sequence to prepare the low dielectric glass;

[0021] Optionally, the annealing treatment is performed at a temperature of 460°C to 560°C.

[0022] According to a third aspect of the embodiments of the present application, a glass product is provided, wherein the material of the glass product includes the above-mentioned low-dielectric glass.

[0023] According to a fourth aspect of the embodiments of the present application, an electronic device is provided, comprising one or more of the above-mentioned low-dielectric glass and the above-mentioned glass product.

[0024] According to a fifth aspect of an embodiment of the present application, there is provided an application of the low dielectric glass as described above in the preparation of 5G communication components, 6G communication components, semiconductor packaging components or optical communication components.

[0025] Compared with the traditional technology, this application has the following beneficial effects:

[0026] The present application reasonably selects and regulates the types of glass components, controls the mass percentage of each component within a specific range, and cooperates and synergizes with each other, so that the glass has a lower dielectric constant, dielectric loss and thermal expansion coefficient. DETAILED DESCRIPTION

[0027] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0028] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art of the present application. The terms used herein in the specification of the present application are only for the purpose of describing specific embodiments and are not intended to limit the present application. Unless otherwise specifically stated, various raw materials, reagents, instruments and equipment used in the present application, etc. can be purchased from the market or can be prepared by existing methods.

[0029] In the present application, "further", "further", "particularly" and the like are used for descriptive purposes to indicate differences in content, but should not be construed as limiting the scope of protection of the present application.

[0030] In this application, "optionally", "optional", and "optional" mean optional or dispensable, that is, any one of the two parallel schemes of "yes" or "no". If multiple "options" appear in a technical solution, unless otherwise specified and there is no contradiction or mutual restriction, each "optional" is independent.

[0031] In the present application, the technical features described in an open manner include closed technical solutions composed of the listed features, and also include open technical solutions containing the listed features.

[0032] In the present application, when it comes to numerical intervals (i.e., numerical ranges), unless otherwise specified, the optional numerical distribution is considered continuous within the above numerical interval, and includes the two numerical endpoints (i.e., the minimum and maximum values) of the numerical range, and each numerical value between the two numerical endpoints. Unless otherwise specified, when the numerical interval only refers to the integers within the numerical interval, it includes the two endpoint integers of the numerical range, and each integer between the two endpoints. In this article, it is equivalent to directly listing each integer, such as t is an integer selected from 1 to 10, indicating that t is any integer selected from the integer group consisting of 1, 2, 3, 4, 5, 6, 7, 8, 9 and 10. In addition, when multiple ranges are provided to describe features or characteristics, these ranges can be combined. In other words, unless otherwise specified, the ranges disclosed herein should be understood to include any and all sub-ranges included therein.

[0033] The temperature parameters in this application, unless otherwise specified, are allowed to be either constant temperature treatment or to vary within a certain temperature range. It should be understood that the constant temperature treatment allows the temperature to fluctuate within the accuracy range controlled by the instrument. Fluctuations within the range of ±5°C, ±4°C, ±3°C, ±2°C, and ±1°C are allowed.

[0034] In the present application, %(w / w) and % both represent weight percentage, %(v / v) refers to volume percentage, and %(w / v) refers to mass volume percentage.

[0035] In traditional technology, quartz glass has a low dielectric constant, dielectric loss and thermal expansion coefficient, and has excellent chemical stability and mechanical properties. However, thermal cycle stress can cause cracking of the silicon layer deposited on the quartz glass substrate, and it is difficult to melt. The melting temperature is too high (>1800℃), the melting time is long, and the melting equipment requirements are high. The dielectric constant of E glass at 10GHz is 6.1, and the dielectric loss is 38×10 -4 , which cannot meet the requirements of high-frequency microwave communication. Commercial products such as BF33, AF32 and Eagle-XG have high dielectric constants and dielectric losses, which cannot meet the requirements of high-frequency microwave communication.

[0036] Based on this, one embodiment of the present application provides a low dielectric glass, comprising the following components, by mass percentage: SiO2 66%~75%, B2O3 20%~26%, P2O5 1%~5%, Al2O3 0.5%~2% and R2O 1%~4%, wherein R2O includes one or more of Li2O, Na2O and K2O; the sum of the mass percentages of SiO2 and B2O3 is 91%~96%.

[0037] In some of the embodiments, the low dielectric glass is composed of the following components by mass percentage: SiO2 66%~75%, B2O3 20%~26%, P2O5 1%~5%, Al2O3 0.5%~2% and R2O 1%~4%.

[0038] SiO2 is a glass-forming oxide that forms an irregular continuous network with the structural units of silicon-oxygen tetrahedrons, becoming the skeleton of glass. The dielectric loss of glass is mainly determined by the compactness of the network structure. The tighter the network structure, the smaller the dielectric loss. If the SiO2 content is too low, the integrity of the glass network will be poor, the migration of foreign ions in the glass will become easier, the ion displacement polarization and the orientation polarization of polar bonds will increase, resulting in electromagnetic signal absorption, and the electromagnetic wave transmittance will decrease. The dielectric constant and dielectric loss will also increase. At the same time, the thermal expansion coefficient of the glass will increase too much, the forming and chemical resistance will decrease, there will be a tendency to crystallize, and the glass strength will decrease. If the SiO2 content is too high, the melting temperature and clarification temperature of the glass will increase, and the viscosity will increase, making it difficult to homogenize the glass, which is not suitable for glass forming process manufacturing. The production cost will also increase.

[0039] As an example, the mass percentage of SiO2 can be 66%, 67%, 68%, 69%, 70%, 71%, 72%, 73%, 74%, 75%, or any value within the range formed by any two of the above point values.

[0040] Furthermore, the mass percentage of SiO2 is 68%~72%.

[0041] B2O3 is also a glass-forming oxide. Boron-oxygen tetrahedrons are a frame-like structure with a tight structure. They can effectively reduce the absorption and attenuation of electromagnetic signals when passing through a glass substrate, reduce the thermal expansion coefficient of glass, and improve its thermal stability and chemical stability. At the same time, B2O3 can reduce the polarizability of glass to reduce the dielectric constant and dielectric loss of glass. If the B2O3 content is too low, there will not be enough free oxygen in the glass, which will increase the number of boron-oxygen triangles in the layered structure and reduce the content of boron-oxygen tetrahedrons, making the glass network structure loose and the chemical properties unstable. If the B2O3 content is too high, it will also increase volatilization, which can easily cause uneven glass composition and poor chemical stability.

[0042] As an example, the mass percentage of B2O3 can be 20%, 21%, 22%, 23%, 24%, 25%, 26%, or any value within the range formed by any two of the above point values.

[0043] Furthermore, the mass percentage of B2O3 is 22%~25%.

[0044] As an example, the sum of the mass percentages of SiO2 and B2O3 can be 91%, 92%, 93%, 94%, 95%, 96%, or any value within the range formed by any two of the above point values.

[0045] It is understandable that SiO2 and B2O3, as the main network formers, can build a denser three-dimensional cross-linked network structure. When B2O3 replaces other network adjusters (such as P2O5), the glass structure changes from a linear chain to a cross-linked three-dimensional network; this structure improves the mechanical strength and thermal shock resistance of the glass, while reducing the generation of non-bridging oxygen (NBOs) and enhancing chemical stability. Furthermore, an increase in the B2O3 content will reduce the optical band gap of the glass, thereby adjusting the UV-visible light transmittance, which can be used to design glass materials for specific optical applications.

[0046] P2O5 is an important component of the network structure of glass materials. P2O5 enters the glass network, causing SiO2 in the glass to be replaced by aluminum phosphate (AlPO4). Compared with the silicon-oxygen tetrahedron in the glass network structure, aluminum phosphate has a larger volume, and the polarizability of P2O5 is smaller than that of SiO2, so the dielectric constant and dielectric loss of the prepared glass can be smaller. If the P2O5 content is too low, the dielectric constant and dielectric loss will increase significantly; if too much P2O5 is introduced, the thermal expansion coefficient will increase significantly, the melting temperature of the glass will increase, and the devitrification and phase separation of the glass will also occur easily.

[0047] As an example, the mass percentage of P2O5 can be 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, 5%, or any value within the range formed by any two of the above point values.

[0048] Furthermore, the mass percentage of P2O5 is 1.5%~3%.

[0049] Al2O3 is an intermediate oxide that can reduce the crystallization tendency of glass, improve the chemical stability, thermal stability, mechanical strength and hardness of glass, and is also a necessary component for improving the elastic modulus of tensile glass. Since the aluminum-oxygen tetrahedron is more stable than the boron-oxygen tetrahedron structure, aluminum ions in the glass structural unit will preferentially obtain free oxygen to form aluminum-oxygen tetrahedrons, and then the excess free oxygen will be transformed into boron-oxygen tetrahedrons with boron-oxygen triangles; however, the volume of aluminum-oxygen tetrahedrons is large, which is not conducive to reducing the dielectric loss of glass. Therefore, when the Al2O3 content is low, the aluminum-oxygen tetrahedron network structure is insufficient, the glass strength will be reduced, and it will also cause glass phase separation to form silicon-rich and boron-rich phases; if there is too much Al2O3, it is difficult to obtain glass with long material properties, and it is more difficult to form glass.

[0050] As an example, the mass percentage of Al2O3 can be 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, 1.1%, 1.2%, 1.3%, 1.4%, 1.5%, 1.6%, 1.7%, 1.8%, 1.9%, 2%, or any value within the range formed by any two of the above point values.

[0051] Furthermore, the mass percentage of Al2O3 is 1%~1.5%.

[0052] In the glass of the present application, B2O3 is a layered structure, while SiO2 is a frame structure. Due to their different structures, it is difficult to form a uniform melt. During the high-temperature cooling process, B2O3 and SiO2 will each be enriched into a system to form two layers of glass that are insoluble in each other, thereby producing phase separation. When R2O exists in the glass, the structure of boron will change. The free oxygen possessed by R2O transforms part of the boron oxygen triangle [BO3] into a boron oxygen tetrahedron [BO4], and the structure of boron changes from layered to frame, thereby creating conditions for B2O3 and SiO2 to form a uniform glass. R2O is an oxide outside the glass network and a solubilizer. It can provide free oxygen to break the Si-O bond, thereby reducing the viscosity and melting temperature of the glass. However, if the content of R2O is too high, the glass bond breaking will increase, the glass network structure will be incomplete, thereby increasing the dielectric constant, dielectric loss and linear thermal expansion coefficient, and reducing the chemical stability; and the increase in the volatilization amount of R2O will lead to uneven distribution of glass components. If the R2O content is too low, it will be unfavorable for the melting and forming of glass.

[0053] As an example, the mass percentage of R2O can be 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, or any value within the range formed by any two of the above point values.

[0054] Furthermore, the mass percentage of R2O is 1.5%~3%.

[0055] It should be noted that the "mass percentage of R2O" in this application refers to the sum of the mass percentages of Li2O, K2O and Na2O.

[0056] In some of the embodiments, the mass percentage of Li2O is 0-2%.

[0057] As an example, the mass percentage of Li2O can be 0, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, 1.1%, 1.2%, 1.3%, 1.4%, 1.5%, 1.6%, 1.7%, 1.8%, 1.9%, 2%, or any value within the range formed by any two of the above point values.

[0058] In some of the embodiments, the mass percentage of K2O is 0-1.5%.

[0059] As an example, the mass percentage of K2O can be 0, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, 1.1%, 1.2%, 1.3%, 1.4%, 1.5%, or any value within the range formed by any two of the above point values.

[0060] In some of the embodiments, the mass percentage of Na2O is 0-3%.

[0061] As an example, the mass percentage of Na2O can be 0, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, 1.1%, 1.2%, 1.3%, 1.4%, 1.5%, 1.6%, 1.7%, 1.8%, 1.9%, 2%, 2.1%, 2.2%, 2.3%, 2.4%, 2.5%, 2.6%, 2.7%, 2.8%, 2.9%, 3%, or any value within the range formed by any two of the above point values.

[0062] In some of the embodiments, the sum of the mass percentages of SiO2, B2O3 and Al2O3 is a, the mass percentage of P2O5 is b, and the value of a / ln(10b) is 23.2~42.6.

[0063] As an example, the value of a / ln(10b) can be 23.2, 23, 23.5, 24, 24.5, 25, 25.5, 26, 26.5, 27, 27.5, 28, 28.5, 29, 29.5, 30, 30.5, 31, 31.5, 32, 32.5, 33, 33.5, 34, 34.5, 35, 35.5, 36, 36.5, 37, 37.5, 38, 38.5, 39, 39.5, 40, 40.5, 41, 41.5, 42, 42.5, 42.6, or any value within the range formed by any two of the above point values.

[0064] Furthermore, the value of a / ln(10b) is 28.3~35.3.

[0065] In some embodiments, the low dielectric glass comprises the following components by mass percentage: SiO2 68%~72%, B2O3 22%~25%, P2O5 1.5%~3%, Al2O3 1%~1.5% and R2O 1.5%~3%.

[0066] It can be understood that when the mass percentage of each component in the low dielectric glass is controlled within the above range, the thermal expansion coefficient of the glass (50°C~300°C) can be between 30×10 -7 / ℃~35×10 -7 / ℃, the dielectric constant is less than or equal to 4.0 and the dielectric loss is less than or equal to 2.5×10 -3 .

[0067] In some of the embodiments, the glass further comprises 0.1% to 0.5% of a clarifier by mass.

[0068] In some embodiments, the fining agent includes one or more of sodium chloride and cerium oxide.

[0069] As an example, the mass percentage of the clarifier may be 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, or any value within the range formed by any two of the above values.

[0070] Further, the clarifier includes sodium chloride and cerium oxide. It is understandable that the above clarifier is not affected by the melting or forming atmosphere and will not affect the service life of the kiln.

[0071] The manufacturing process of the above-mentioned low dielectric glass in the present application includes but is not limited to float forming process, overflow down-drawing method, pull-up method, flat-drawing method, rolling method, etc.; the melting method can be selected from full electric melting, electric boosting + full oxygen combustion, electric boosting + oxygen-enriched combustion or flame + electric boosting.

[0072] In one embodiment of the present application, a method for preparing low dielectric glass is provided, comprising the following steps:

[0073] Providing raw materials according to the above-mentioned components of the low dielectric glass, and mixing the raw materials to prepare a mixture;

[0074] The mixture is melted to prepare molten glass;

[0075] The glass liquid is subjected to molding and annealing treatments in sequence to prepare low dielectric glass.

[0076] In some embodiments, the annealing temperature is 460°C-560°C.

[0077] As an example, the temperature of the annealing treatment can be 460℃, 465℃, 470℃, 475℃, 480℃, 485℃, 490℃, 495℃, 500℃, 505℃, 510℃, 515℃, 520℃, 525℃, 530℃, 535℃, 540℃, 545℃, 550℃, 555℃, 560℃, or any value within the range formed by any two of the above point values.

[0078] The above-mentioned glass of the present application has the advantages of low thermal expansion coefficient, low dielectric constant, low dielectric loss and wear resistance.

[0079] In one embodiment of the present application, a glass product is provided, the preparation material of which includes the above-mentioned low dielectric glass.

[0080] In some of these embodiments, the glass article may include glass fiber, carrier glass for ultra-thin silicon semiconductor wafers, and the like.

[0081] In one embodiment of the present application, an electronic device is provided, comprising one or more of the above-mentioned low-dielectric glass and the above-mentioned glass product.

[0082] The glass of the present application has the advantages of low dielectric constant, low dielectric loss and low thermal expansion coefficient, and can meet the requirements of the fifth generation wireless communication technology for the communication device substrate. Therefore, the electronic device containing the glass can be applicable to the fifth generation wireless communication technology.

[0083] One embodiment of the present application also provides the application of the above-mentioned low dielectric glass in 5G communication components, 6G communication components, semiconductor packaging components or optical communication components.

[0084] In some embodiments, the above-mentioned low dielectric stripping can be applied to 5G / 6G communications, semiconductor packaging (such as chip interconnect interposer materials and wafer-level packaging materials), optical communications (such as high-speed optical module packaging materials and optical fiber connectors), and other technical fields with high requirements for signal transmission efficiency and electromagnetic performance.

[0085] The present application will be further described below in conjunction with specific examples and comparative examples, but they should not be construed as limiting the scope of protection of the present application. The raw materials involved in the following specific examples, unless otherwise specified, can all be sourced from commercial sources, the instruments used, unless otherwise specified, can all be sourced from commercial sources, and the processes involved, unless otherwise specified, are all conventionally selected by those skilled in the art.

[0086] Example 1 to Example 30

[0087] (1) Raw material preparation: According to the composition and mass percentage recorded in Tables 1 to 5, weigh a mixture of raw materials with a total weight greater than 500 g, and stir and mix thoroughly.

[0088] (2) Melting: Place the mixture into a platinum crucible larger than 400 mL, place the platinum crucible into a silicon-molybdenum furnace, heat it to the melting temperature of 1650°C, and melt and clarify it for more than 4 to 8 hours to homogenize it and cast it into a mold for casting.

[0089] (3) Annealing: The formed glass is placed in an annealing furnace for annealing at a temperature of 460°C to 560°C to obtain a glass sample.

[0090] Thermal performance test: Referring to GB / T16920-2015, PC402L horizontal dilatometer from NETZSCH of Germany was used to test the thermal expansion coefficient CTE (50℃~300℃), transition temperature Tg, annealing point, strain point, etc.

[0091] Dielectric property test: Referring to the test method described in ASTM-D150-18, the glass to be tested was processed into a rectangular sheet sample of 10.16mm×22.86mm×1mm, and the dielectric constant and dielectric loss of the glass sample at a frequency of 10GHz were measured using a PNA-N5234A vector network analyzer and a waveguide method.

[0092] The test results of thermal properties and dielectric properties of the glasses prepared in Examples 1 to 30 are shown in Tables 1 to 5.

[0093] In the following table, "10 4 The working point at dPas refers to the time when the viscosity of the glass liquid reaches 10 4 dPas at temperature.

[0094] In the table below, "1mm transmittance (546nm) (%)" refers to the ability of glass with a thickness of 1mm to transmit light of this wavelength when irradiated with light of this wavelength, expressed as a percentage.

[0095] Table 1

[0096]

[0097] Table 2

[0098]

[0099] Table 3

[0100]

[0101] Table 4

[0102]

[0103] Table 5

[0104]

[0105] It can be seen from Tables 1 to 5 that the glass components are reasonably selected and regulated to make the prepared glass have a lower thermal expansion coefficient and low dielectric properties. Specifically, the thermal expansion coefficient of the glass (50°C~300°C) is between 30×10-7 / ℃~40×10 -7 / ℃, which makes the glass more suitable for thermal shock resistance and TGV drilling; at the same time, the dielectric constant of the glass at 10GHZ is less than 4.2 and the dielectric loss is less than 3.0×10 -3 .

[0106] By further optimizing the composition ratio of the glass, the thermal expansion coefficient of the glass (50°C~300°C) can be between 30×10 -7 / ℃~35×10 -7 / ℃, the dielectric constant is less than or equal to 4.0 and the dielectric loss is less than or equal to 2.5×10 -3 .

[0107] The preparation processes of Comparative Examples 1 to 7 are basically the same as those of Examples 1 to 30, except that the mass percentages of the components are different. The specific components of each comparative example are shown in Table 6.

[0108] Table 6

[0109]

[0110] In Comparative Example 1, SiO2 is too low, and the CTE of the glass obtained is too high, and the dielectric constant and dielectric loss are both high, which cannot match the silicon wafer well. In Comparative Example 2, SiO2 is too high, which makes the working point of the glass high, resulting in a high melting temperature, increased difficulty in glass preparation, poor preparation uniformity, and more bubbles. In Comparative Example 3, B2O3 is too low, which makes the melting temperature of the glass high, and the dielectric constant and dielectric loss also increase. In Comparative Example 4, B2O3 is too much, resulting in devitrification of the glass, poor uniformity, and thus affecting the dielectric properties. In Comparative Example 5, P2O5 is not added, resulting in a viscosity of 10 14.5 dPas, the strain point of the glass increases, and the difficulty of melting increases. In Comparative Example 6, Al2O3 is too high, making the glass difficult to melt, the melting temperature is high, and the dielectric constant and dielectric loss are high. In Comparative Example 7, the alkali metal content increases, the dielectric constant and dielectric loss increase significantly, and the requirement of low dielectric is not met.

[0111] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0112] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A low dielectric glass, characterized in that: The invention comprises the following components by mass percentage: SiO2 66%~75%, B2O3 20%~26%, P2O5 1%~5%, Al2O3 0.5%~2% and R2O 1%~4%, wherein the R2O comprises one or more of Li2O, Na2O and K2O; the sum of the mass percentages of the SiO2 and the B2O3 is 91%~96%.

2. The low dielectric glass according to claim 1, characterized in that: The sum of the mass percentages of the SiO2, B2O3 and Al2O3 is a, the mass percentage of the P2O5 is b, and the value of a / ln(10b) is 23.2-42.6; Optionally, the value of a / ln(10b) is 28.3~35.

3.

3. The low dielectric glass according to any one of claims 1 to 2, characterized in that: Calculated by mass percentage, it includes the following components: SiO2 68%~72%, B2O3 22%~25%, P2O5 1.5%~3%, Al2O3 1%~1.5% and R2O 1.5%~3%.

4. The low dielectric glass according to any one of claims 1 to 2, characterized in that: The mass percentage of Li2O is 0-2%; and / or, The mass percentage of K2O is 0-1.5%; and / or, The mass percentage of the Na2O is 0-3%.

5. The low dielectric glass according to any one of claims 1 to 2, characterized in that: The low dielectric glass further comprises 0.1% to 0.5% of a clarifier by mass percentage; Optionally, the clarifier includes one or more of sodium chloride and cerium oxide.

6. The low dielectric glass according to any one of claims 1 to 2, characterized in that: At 50°C to 300°C, the thermal expansion coefficient of the low dielectric glass is 30×10 -7 / ℃~35×10 -7 / ℃; and / or, At 10 GHz, the dielectric constant of the low dielectric glass is ≤4.0; and / or, Under 10 GHZ conditions, the dielectric loss of the low dielectric glass is ≤2.5×10 -3 .

7. A method for preparing low dielectric glass, characterized in that: The steps include: Providing raw materials according to the components of the low dielectric glass according to any one of claims 1 to 6, and mixing the raw materials to prepare a mixture; melting the mixture to prepare molten glass; The glass liquid is subjected to molding and annealing treatment in sequence to prepare the low dielectric glass; Optionally, the annealing treatment is performed at a temperature of 460°C to 560°C.

8. A glass product, characterized in that: The material of the glass product includes the low dielectric glass according to any one of claims 1 to 6.

9. An electronic device, characterized in that: The invention comprises one or more of the low dielectric glass according to any one of claims 1 to 6 and the glass product according to claim 8.

10. Use of the low dielectric glass according to any one of claims 1 to 6 in the preparation of 5G communication components, 6G communication components, semiconductor packaging components or optical communication components.

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