A Ce 3+ Doped Gadolinium Silicate Scintillation Glass, its Preparation Method and Application

Abstract

A Ce 3+ This invention relates to doped gadolinium silicon boron scintillation glass, its preparation method, and its applications, belonging to the field of scintillation luminescence materials technology. The Ce... 3+ The main components of the doped gadolinium borosilicate scintillation glass, and their molar percentages, are as follows: SiO2 5%, B2O3 25%, Gd2O3 25%, GdF3 40-10%, and X 5-35%; X is one or more of MgF2, LiF, BaO, and BaF2, and the sum of the main components is 100 mol%; the reducing agent, by mass ratio, is Ce... 3+ Gadolinium borosilicate scintillation glass: reducing agent = (6-2):1; Ce-doped 3+ The molar percentage of Ce in the main component is 1%–2%. 3+ Doped gadolinium silicon boron scintillation glass has high light yield, X-ray imaging resolution, and quantum efficiency of high-density scintillation glass, while reducing the fabrication cost of high-density scintillation glass.

Description

Technical Field

[0001] This invention belongs to the field of scintillation luminescent materials technology, and relates to a Ce... 3+ Doped gadolinium silicon boron scintillation glass, its preparation method and applications, especially a Ce-doped gadolinium scintillation glass with high light yield and high X-ray imaging resolution. 3+ Doped gadolinium silicon boron scintillation glass, its preparation method and application. Background Technology

[0002] Scintillation materials are energy conversion materials that can convert high-energy rays, such as X-rays, gamma rays, or ionizing radiation from high-energy particles, into ultraviolet or visible light under high-energy radiation. Scintillation materials have wide applications in high-energy physics, nuclear physics, industrial non-destructive testing, medical imaging, and security detection.

[0003] Compared with traditional scintillation crystals, scintillation glass has advantages such as short preparation cycle, easy composition adjustment, good sample uniformity, high transparency, easy processing, and mass production capability. However, due to inherent defects within the glass, it is difficult to guarantee high imaging resolution and high light yield while ensuring high density. Currently, most high light yield scintillators are crystalline materials, but the preparation process of crystalline materials is complicated, the production cost is high, and it is not easy to mass-produce them.

[0004] Previously, most scintillation glass had a density of 4.0 g / cm³. 3 The application of scintillators in X-ray nondestructive testing is limited. To improve the density and light yield of scintillators, common methods include adding oxides with high atomic numbers, adding oxide metal materials that promote luminescence, or increasing the concentration of the luminescent center material, which is beneficial for absorbing high-energy rays and depositing energy. Currently, the scintillator glasses studied mainly include silicate glasses, germanate glasses, phosphate glasses, etc. High-density glass components mostly contain heavy metal oxides such as TeO2, GeO2, and Lu2O3. Compared to oxide scintillator glasses, fluoride scintillator glasses have superior transmittance in the ultraviolet-visible region. In 1994, I. Dafinei et al. in France studied Ce... 3+ When scintillating glasses with doped AFG, HFG, and ZFG matrices, low or even no light yield was observed, with the highest being only 75.4 Ph / MeV for HFG437, less than 2% of that of BGO crystals. This was mitigated by increasing Ce... 3+ The doping concentration can improve the luminescence performance, but the effect is limited. In 2019, M. Akatsuka et al. in Japan further introduced AlPO4 into the AFG matrix, which can further increase the light yield to 94Ph / MeV, which is 4 times higher than the performance of AFG417.

[0005] Ce 3+The energy level difference between the 4f and 5d orbitals of Ce ions is small, and the emission wavelength is located in the blue-violet region, which can reduce the self-absorption effect of the matrix glass. Furthermore, the decay time is typically in the range of 20-90 ns. Therefore, Ce... 3+ Doped scintillation glasses are widely used as fast-decaying scintillation materials. When Ce 3+ When ions are introduced into the glass matrix as luminescent centers, their energy levels split under the influence of the surrounding ligand field, affecting the emission spectrum and lifetime. High-energy physics requires rapid detection and identification of particles, and Ce... 3+ Doped scintillation glasses perfectly meet this requirement, while the field of high-energy physics requires scintillators to have high density and high ultraviolet-visible transmittance. Heavy metal fluoride glasses and oxide glasses meet this requirement and are currently the main research objects. Summary of the Invention

[0006] In view of the above-mentioned prior art, the technical problem to be solved by the present invention is to provide a Ce 3+ Doped gadolinium silicon boron scintillation glass, its preparation method, and its applications. The Ce... 3+ Silicon boron gadolinium scintillation glass is an amorphous material with high light yield, high density, high X-ray imaging resolution, and high quantum efficiency. This Ce... 3+ Doped gadolinium silicon boron scintillation glass significantly increases its density and lowers its melting and casting temperature by using Gd2O3 and GdF3 in combination. Furthermore, the introduction of substances such as MgF2 improves the glass's light yield and X-ray imaging performance, while simultaneously reducing the manufacturing cost of high-density scintillation glass. Ce 3+ The density of gadolinium-doped silicon boron scintillation glass is 5.3-5.9 g / cm³. 3 The PL quantum efficiency is 59.65%-85.00%, and the light yield is 1223-2100 ph / Me. It achieves X-ray imaging with higher spatial resolution (14-26 lp / m) than commercial Csl:TI crystals (10-11 lp / mm), making Ce-based... 3+ Scintillation glass has potential for practical applications in X-ray imaging.

[0007] To solve the above-mentioned technical problems, the present invention provides a Ce 3+ A silicon boron gadolinium scintillation glass, comprising a host component, a reducing agent, and an external Ce dopant. 3+The main components include SiO2, B2O3, Gd2O3, GdF3 and X, with the following molar percentages: SiO2 5 mol%, B2O3 25 mol%, Gd2O3 25 mol%, GdF3 40-10 mol%, and X 5-35 mol%. X is one or more of MgF2, LiF, BaO, and BaF2, and the sum of the main components is 100 mol%.

[0008] The reducing agent, by mass ratio, Ce 3+ Gadolinium borosilicate scintillation glass: reducing agent = (6-2):1;

[0009] The externally doped Ce 3+ The molar percentage of the main component is 1 mol%-2 mol%.

[0010] Preferably, the reducing agent is C powder and / or C particles.

[0011] Preferably, the externally doped Ce 3+ Introduced by CeF3 and / or CeO2.

[0012] The Ce 3+ Gadolinium-doped silicon boron scintillation glass is an amorphous material with a density of 5.3-5.9 g / cm³. 3 The light yield is 1223-2100 ph / MeV, the X-ray imaging line log number is 14-26 lp / mm, and the quantum efficiency is 59.65-85.00%.

[0013] The present invention also includes a Ce 3+ The preparation method of doped gadolinium silicon boron scintillation glass includes the following steps:

[0014] S1: According to the Ce 3+ The raw materials for making silicon boron gadolinium scintillation glass are weighed and thoroughly ground and mixed to obtain glass raw materials;

[0015] S2: Pour the uniformly mixed glass raw material into a covered corundum crucible and melt it to obtain a uniform glass melt;

[0016] S3: Pour the homogeneous glass melt into a preheated mold, cool and shape it, then transfer it to an annealing furnace for constant-temperature annealing to eliminate internal stress and obtain Ce. 3+ Silicon boron gadolinium doped scintillation glass.

[0017] Preferably, in step S2, when a corundum crucible is used, the melting temperature is 1200-1250℃, the melting time is 90-120min, and the melting atmosphere is an air atmosphere;

[0018] Preferably, in step S3, the preheating temperature of the mold is 450-500℃.

[0019] Preferably, in step S3, the annealing temperature is 450-500℃ and the annealing time is 6-8 hours.

[0020] Preferably, in step S3, after annealing, the process further includes: cooling, including reducing the temperature to 150°C at a cooling rate of 2-5°C / min, and then cooling it to room temperature in the furnace.

[0021] The present invention also includes a Ce 3+ Applications of gadolinium-doped silicon boron scintillation glass, the Ce 3+ Doped gadolinium silicon boron scintillation glass or Ce prepared by the above method 3+ Gadolinium-doped silicon boron scintillation glass is used in X-ray medical imaging, radiation detection, and industrial non-destructive testing.

[0022] An optical element comprising the Ce described in this invention 3+ Silicon boron gadolinium doped scintillation glass.

[0023] Compared with the prior art, the Ce of the present invention 3+ The beneficial effects of doped gadolinium silicon boron scintillation glass, its preparation method, and its application are as follows:

[0024] This invention significantly increases glass density to greater than 5 g / cm³ by using only Gd₂O₃ and GdF₃ without using heavy metal compounds such as W, Pb, Lu, Ge, La, and Tl. 3 The total content of rare earth element compounds in the glass composition can reach up to 35 mol%. This invention has the advantage of high light yield, with light yield test results at 2100 ph / Me, and its luminous integral intensity can reach 50%-80% of that of BGO scintillation crystals. It also has high X-ray imaging resolution, with X-ray imaging line pairs at 26 lp / mm, and high quantum efficiency, with a quantum efficiency test result of up to 85%.

[0025] Ce of the present invention 3+ Doped gadolinium silicon boron scintillation glass is an amorphous material with a simple preparation process, low production cost, and ease of mass production.

[0026] In this invention, GdF3, as a heavy metal fluoride, has the effects of high density, lowering glass melting temperature, and reducing viscosity. It can also improve the openness of the glass network structure and the solubility of rare earth oxides in glass. When used in conjunction with Gd2O3, it can also reduce the manufacturing cost of the glass. The introduction of B2O3 can lower the preparation temperature of the scintillating glass, thereby reducing the manufacturing difficulty. The introduction of MgF2 or LiF can change the physical and chemical properties of the glass, effectively and significantly improving the light yield, X-ray imaging effect, and quantum efficiency. The scintillating glass of this invention does not contain Pb, making it more friendly to humans and the environment; it does not contain expensive raw materials such as GeO2 and Lu2O3, resulting in lower preparation costs and no radiation background; it does not contain raw materials with variable valence properties such as TeO2, Bi2O3, and WO3, preventing glass coloration during the melting and casting process. The use of a corundum crucible improves the corrosion of the corundum crucible by the molten glass, directly and effectively improving the density and stability of the glass. The introduction of C powder or C particles as a reducing agent can effectively provide a reducing atmosphere during the glass melting process, ensuring the preservation of Ce. 3+ It will not be oxidized. This invention facilitates large-scale fabrication and can be used to fabricate large-scale optical devices. The Ce prepared by this invention... 3+ High-yield gadolinium silicon boron scintillation glass for high X-ray imaging exhibits excellent chemical and physical stability. Attached Figure Description

[0027] Figure 1 These are morphological images of the scintillation glass in Examples 1-5.

[0028] Figure 2 The image shows a comparison of the X-ray excitation emission spectra of the scintillation glass and BGO crystal in Examples 1-5.

[0029] Figure 3 The transmission spectra are for Examples 1-5.

[0030] Figure 4 The DSC test spectra are from Examples 1-5.

[0031] Figure 5 The images shown are X-ray imaging and resolution diagrams for Example 1; (a) is an X-ray imaging resolution diagram; and (b) is an X-ray imaging chip diagram.

[0032] Figure 6 Here are X-ray imaging and resolution diagrams for Example 5; (a) is an X-ray imaging resolution diagram; (b) is an X-ray imaging chip diagram. Detailed Implementation

[0033] The present invention will be further described in detail below with reference to the embodiments.

[0034] The technical solution of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. The described embodiments are only some examples of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0035] Example 1

[0036] A Ce 3+ Gadolinium-doped silicon boron scintillation glass contains a main component and an external Ce dopant. 3+ The molar percentages are: 5SiO2-25B2O3-25Gd2O3-40GdF3-5MgF2-1CeF3;

[0037] 1. Weigh the raw materials according to the above glass components and grind and mix them thoroughly to obtain glass raw materials;

[0038] 2. Pour the well-mixed glass raw material into a covered corundum crucible. Place a large corundum crucible over the corundum crucible containing the raw material. Place 10g of graphite powder at the bottom of the large corundum crucible as a reducing agent. Cover the crucible and sinter in air atmosphere. The melting temperature is 1250℃ and the melting time is 120min.

[0039] 3. Pour the molten glass into a preheated mold at 500℃ to cool and solidify. Then, transfer it to an annealing furnace at 500℃ for isothermal annealing to eliminate internal stress. After annealing for 6 hours, reduce the temperature to 150℃ at a rate of 2℃ / min, and then cool it to room temperature in the furnace to obtain Ce. 3+ Silicon boron gadolinium doped scintillation glass.

[0040] Example 2

[0041] A Ce 3+ Gadolinium-doped silicon boron scintillation glass contains a main component and an external Ce dopant. 3+ The molar percentage composition is: 5SiO2-25B2O3-25Gd2O3-35GdF3-10MgF2-1CeF3;

[0042] 1. Weigh the raw materials according to the above glass components and grind and mix them thoroughly to obtain glass raw materials;

[0043] 2. Pour the well-mixed glass raw material into a covered corundum crucible. Place a large corundum crucible over the corundum crucible containing the raw material. Place 10g of graphite powder at the bottom of the large corundum crucible as a reducing agent. Cover the crucible and sinter in air atmosphere. The melting temperature is 1250℃ and the melting time is 120min.

[0044] 3. Pour the molten glass into a preheated mold at 500℃ to cool and solidify. Then, transfer it to an annealing furnace at 500℃ for isothermal annealing to relieve internal stress. After annealing for 6 hours, reduce the temperature to 150℃ at a rate of 2℃ / min, and then cool it to room temperature in the furnace to obtain Ce. 3+ Silicon boron gadolinium doped scintillation glass.

[0045] Example 3

[0046] A Ce 3+ Gadolinium-doped silicon boron scintillation glass contains a main component and an external Ce dopant. 3+ The molar percentage composition is: 5SiO2-25B2O3-25Gd2O3-30GdF3-15MgF2-1CeF3;

[0047] 1. Weigh the raw materials according to the above glass components and grind and mix them thoroughly to obtain glass raw materials;

[0048] 2. Pour the well-mixed glass raw material into a covered corundum crucible. Place a large corundum crucible over the corundum crucible containing the raw material. Place 10g of graphite powder at the bottom of the large corundum crucible as a reducing agent. Cover the crucible and sinter in air atmosphere. The melting temperature is 1250℃ and the melting time is 120min.

[0049] 3. Pour the molten glass into a preheated mold at 500℃ to cool and solidify. Then, transfer it to an annealing furnace at 500℃ for isothermal annealing to relieve internal stress. After annealing for 6 hours, reduce the temperature to 150℃ at a rate of 2℃ / min, and then cool it to room temperature in the furnace to obtain Ce. 3+ Silicon boron gadolinium doped scintillation glass.

[0050] Example 4

[0051] A Ce 3+ Gadolinium-doped silicon boron scintillation glass contains a main component and an external Ce dopant. 3+ The molar percentage composition is: 5SiO2-25B2O3-25Gd2O3-20GdF3-25MgF2-1CeF3;

[0052] 1. Weigh the raw materials according to the above glass components and grind and mix them thoroughly to obtain glass raw materials;

[0053] 2. Pour the well-mixed glass raw material into a covered corundum crucible. Place a large corundum crucible over the corundum crucible containing the raw material. Place 10g of graphite powder at the bottom of the large corundum crucible as a reducing agent. Cover the crucible and sinter in air atmosphere. The melting temperature is 1250℃ and the melting time is 120min.

[0054] 3. Pour the molten glass into a preheated mold at 500℃ to cool and solidify. Then, transfer it to an annealing furnace at 500℃ for isothermal annealing to relieve internal stress. After annealing for 6 hours, reduce the temperature to 150℃ at a rate of 2℃ / min, and then cool it to room temperature in the furnace to obtain Ce. 3+ Silicon boron gadolinium doped scintillation glass.

[0055] Example 5

[0056] A Ce 3+ Gadolinium-doped silicon boron scintillation glass contains a main component and an external Ce dopant. 3+ The molar percentage composition is: 5SiO2-25B2O3-25Gd2O3-10GdF3-35MgF2-1CeF3;

[0057] 1. Weigh the raw materials according to the above glass components and grind and mix them thoroughly to obtain glass raw materials;

[0058] 2. Pour the well-mixed glass raw material into a covered corundum crucible. Place a large corundum crucible over the corundum crucible containing the raw material. Place 10g of graphite powder at the bottom of the large corundum crucible as a reducing agent. Cover the crucible and sinter in air atmosphere. The melting temperature is 1250℃ and the melting time is 120min.

[0059] 3. Pour the molten glass into a preheated mold at 500℃ to cool and solidify. Then, transfer it to an annealing furnace at 500℃ for isothermal annealing to relieve internal stress. After annealing for 6 hours, reduce the temperature to 150℃ at a rate of 2℃ / min, and then cool it to room temperature in the furnace to obtain Ce. 3+ Silicon boron gadolinium doped scintillation glass.

[0060] Example 6

[0061] A Ce 3+ Gadolinium-doped silicon boron scintillation glass contains a main component and an external Ce dopant. 3+ The molar percentage composition is: 5SiO2-25B2O3-25Gd2O3-10GdF3-35LiF-1CeF3;

[0062] 1. Weigh the raw materials according to the above glass components and grind and mix them thoroughly to obtain glass raw materials;

[0063] 2. Pour the well-mixed glass raw material into a covered corundum crucible. Place a large corundum crucible over the corundum crucible containing the raw material. Place 10g of graphite powder at the bottom of the large corundum crucible as a reducing agent. Cover the crucible and sinter in air atmosphere. The melting temperature is 1250℃ and the melting time is 120min.

[0064] 3. Pour the molten glass into a preheated mold at 500℃ to cool and solidify. Then, transfer it to an annealing furnace at 500℃ for isothermal annealing to relieve internal stress. After annealing for 6 hours, reduce the temperature to 150℃ at a rate of 2℃ / min, and then cool it to room temperature in the furnace to obtain Ce. 3+ A silicon boron gadolinium scintillation glass. In this embodiment, after LiF doping, the glass density decreases slightly due to the lower atomic number of Li, reaching 5.3 g / cm³. 3 The introduction of LiF helps to lower the glass melting and casting temperature, resulting in better glass forming. Li also contributes to the luminescence of the glass, with a light yield of 1950 ph / MeV and an X-ray imaging resolution of 18 lp / mm.

[0065] Example 7

[0066] A Ce 3+ Gadolinium-doped silicon boron scintillation glass contains a main component and an external Ce dopant. 3+ The molar percentage composition is: 5SiO2-25B2O3-25Gd2O3-10GdF3-10BaF2-25BaO-1CeF3;

[0067] 1. Weigh the raw materials according to the above glass components and grind and mix them thoroughly to obtain glass raw materials;

[0068] 2. Pour the well-mixed glass raw material into a covered corundum crucible. Place a large corundum crucible over the corundum crucible containing the raw material. Place 10g of graphite powder at the bottom of the large corundum crucible as a reducing agent. Cover the crucible and sinter in air atmosphere. The melting temperature is 1250℃ and the melting time is 120min.

[0069] 3. Pour the molten glass into a preheated mold at 500℃ to cool and solidify. Then, transfer it to an annealing furnace at 500℃ for isothermal annealing to relieve internal stress. After annealing for 6 hours, reduce the temperature to 150℃ at a rate of 2℃ / min, and then cool it to room temperature in the furnace to obtain Ce. 3+ Gadolinium-doped silicon boron scintillation glass. In this embodiment, both BaF2 and BaO are introduced, resulting in an increased glass density of 5.9 g / cm³. 3 However, the introduction of Ba leads to a deterioration in the physical properties of the glass, making it more brittle during processing. Nevertheless, the transmittance of the glass is not affected, and the X-ray imaging resolution of the glass is 16 lp / mm, which is worse than the effect of introducing MgF2.

[0070] Comparative Example 1

[0071] Same as Example 1, except that the molar percentage of the glass composition is: 5SiO2-25B2O3-25Gd2O3-40GdF3-5MgF2

[0072] -5CeF3; Due to the increased introduction of CeF3, the glass reduction is incomplete, resulting in a pale yellow scintillator glass. The luminous intensity of the glass decreases, quenching occurs in the light yield, and the measured light yield is significantly reduced. The density of the glass does not change significantly, the X-ray resolution of the glass decreases, and the quantum efficiency decreases.

[0073] Comparative Example 2

[0074] Similar to Example 1, the glass composition molar percentage is: 5SiO2-25B2O3-25Gd2O3-40GdF3-5MgF2-1CeF3; the difference lies in the melting temperature of the glass being 1150℃ and the annealing temperature being 500℃. Due to the reduced melting temperature, the glass exhibits phase separation and turbidity, while the density remains largely unchanged, and the luminous intensity is significantly reduced. This results in decreased light yield, reduced X-ray imaging performance, and decreased quantum efficiency.

[0075] Comparative Example 3

[0076] Similar to Example 1, the glass composition molar percentage is: 5SiO2-25B2O3-25Gd2O3-40GdF3-5MgF2-1CeF3; the difference lies in the melting temperature of the glass being 1250℃ and the annealing temperature being 550℃. Due to the increased annealing temperature, crystallization occurs on the glass surface. While the glass density does not change significantly, the luminous intensity and light yield decrease, resulting in poorer X-ray imaging and reduced quantum efficiency.

[0077] Comparative Example 4

[0078] Same as Example 5, except that the molar percentage of the glass composition is: 5SiO2-25B2O3-25Gd2O3-5GdF3-

[0079] The ratio of MgF2 to GdF3 is 8:1. The increased MgF2 content leads to significant crystallization in the glass, resulting in internal cloudiness and opacity. This reduces the glass's density, luminous intensity, and X-ray imaging clarity, while also lowering its quantum efficiency and light yield.

[0080] Comparative Example 5

[0081] Same as Example 5, except that the molar percentage of the glass composition is: 5SiO2-10B2O3-25Gd2O3-20GdF3-

[0082] 40MgF2-1CeF3; Due to the decrease in B2O3 content, boric acid acts as a flux in the glass. Therefore, after sintering, the glass contains a large amount of solid infusible material. Since the Gd compound cannot be fully melted, although the density of the glass increases, the glass cannot transmit light, the luminous intensity of the glass decreases, the quantum efficiency decreases, the X-ray imaging effect deteriorates, and the light yield decreases.

[0083] The densities of all scintillation glasses were obtained by immersion in alcohol using a precision balance based on Archimedes' principle. The X-ray excitation emission (XEL) spectra of all scintillation glasses were measured in reflectance mode using a Zolix Omni-λ300i spectrometer. Figure 1 The images show the morphology of the scintillation glass in Examples 1-5. As can be seen from the images, the scintillation glass is colorless and transparent, and there is no yellowing phenomenon, which proves that the reduction effect is good. Figure 2 The X-ray excitation emission spectra of the scintillation glass and BGO crystal prepared in Examples 1-5 are compared. The comparison shows that the introduction of MgF2 enhances the luminescence of the glass, and the light yield of the glass gradually increases with the introduction of MgF2. Figure 3 The transmission spectra of Examples 1-5 show that the scintillation glass has good transmittance, with all samples having a transmittance of 85%. Figure 4 The DSC test spectra of Examples 1-5 show that the transition temperature and crystallization initiation temperature of the scintillation glass are relatively high, indicating that the glass has good stability. The melting point of MgF2 is relatively low. With the introduction of MgF2, the transition temperature and crystallization initiation temperature of the glass gradually shift towards lower temperatures, which is in line with the trend. Figure 5 The image shows the X-ray imaging and resolution of Example 1. It can be seen from the image that the resolution line pairs of the glass are 14pl / mm, and the pins of the chip can be clearly seen, proving that the glass has a good response to X-rays. Figure 6 The image shows the X-ray imaging and resolution of Example 5. It can be seen from this image that the line logarithm of the glass resolution is 26 pL / mm, proving that the introduction of MgF2 further improves the glass resolution and makes the glass more sensitive to X-rays. The density, quantum efficiency, and light yield information of the scintillator glasses of Examples 1-5 and Comparative Examples 1-5 are shown in Table 1. The Ce2O3 prepared in this invention... 3+ The silicon boron gadolinium scintillation glass possesses high light yield, high X-ray imaging resolution line pairs, high quantum detection efficiency, and high density. Furthermore, the glass of this invention is low-cost, making it suitable for medical imaging, radiation detection, and industrial non-destructive testing.

[0084] Table 1. Performance of the scintillation glasses prepared in the examples and comparative examples.

[0085]

Claims

1. A Ce 3+ The gadolinium-doped silicon boron scintillation glass is characterized by: The Ce 3+ A silicon boron gadolinium scintillation glass, comprising a host component, a reducing agent, and an external Ce dopant. 3+ ; The main components and their respective molar percentages are as follows: SiO2 5%, B2O3 25%, Gd2O3 25%, GdF3 40-10%, and X 5-35%; X is one or more of MgF2 and LiF, and the sum of the main components is 100 mol%. By mass ratio, Ce 3+ Gadolinium borosilicate scintillation glass: reducing agent = (6-2):1; Externally doped Ce 3+ It accounts for 1%-2% of the molar percentage of the main component; The Ce 3+ Gadolinium-doped silicon boron scintillation glass is amorphous, with a density of 5.3-5.9 g / cm³. 3 The light yield is 1223-2100 ph / MeV, the X-ray imaging line log number is 14-26 lp / mm, and the quantum efficiency is 59.65-85.00%.

2. The Ce as described in claim 1 3+ The gadolinium-doped silicon boron scintillation glass is characterized by: The reducing agent is C powder and / or C particles.

3. Ce according to claim 1 3+ The gadolinium-doped silicon boron scintillation glass is characterized by: The externally doped Ce 3+ Introduced by CeF3 and / or CeO2.

4. The Ce as described in any one of claims 1-3 3+ A method for preparing gadolinium-doped silicon boron scintillation glass, characterized in that: Includes the following steps: S1: According to the Ce 3+ The raw materials for making silicon boron gadolinium scintillation glass are weighed and thoroughly ground and mixed to obtain glass raw materials; S2: Pour the uniformly mixed glass raw material into a covered corundum crucible and melt it to obtain a uniform glass melt; S3: Pour the homogeneous glass melt into a preheated mold, cool and shape it, then transfer it to an annealing furnace for constant-temperature annealing to eliminate internal stress and obtain Ce. 3+ Silicon boron gadolinium doped scintillation glass.

5. Ce according to claim 4 3+ A method for preparing gadolinium-doped silicon boron scintillation glass, characterized in that: In step S2, when using a corundum crucible, the melting temperature is 1200-1250℃, the melting time is 90-120min, and the melting atmosphere is an air atmosphere.

6. Ce according to claim 4 3+ A method for preparing gadolinium-doped silicon boron scintillation glass, characterized in that: In step S3, the preheating temperature of the mold is 450-500℃; and / or, the annealing temperature is 450-500℃ and the annealing time is 6-8 hours.

7. Ce according to claim 4 3+ A method for preparing gadolinium-doped silicon boron scintillation glass, characterized in that: In step S3, after annealing, the process further includes cooling, including reducing the temperature to 150°C at a cooling rate of 5-10°C / min, and then cooling it to room temperature in the furnace.

8. A Ce 3+ The application of gadolinium-doped silicon boron scintillation glass is characterized by: Ce as described in any one of claims 1-3 3+ Doped gadolinium silicon boron scintillation glass or Ce prepared by any one of claims 4-7 3+ Gadolinium-doped silicon boron scintillation glass is used for X-ray medical imaging, radiation detection, and industrial non-destructive testing.

9. An optical element, characterized in that: Including Ce as described in any one of claims 1-3 3+ Doped gadolinium silicon boron scintillation glass or Ce prepared by any one of claims 4-7 3+ Silicon boron gadolinium doped scintillation glass.

Images