Scintillator detector for measuring microstructure of slow extraction beam

Abstract

The present invention relates to the field of accelerator beam diagnostic technology, and in particular to a scintillator detector for measuring slow extraction beam microstructures. The scintillator detector comprises: a scintillator configured as a rectangular plate for receiving a beam to generate photons; a SiPM array for receiving the photons generated by the scintillator and outputting electrical signals; and a SiPM processing circuit for performing summation and inverse processing on the electrical signals. The detector also comprises a support shell for mounting the above components, one end of the support shell being configured as a cylindrical shell and the other end of the support shell being configured as a rectangular shell; the SiPM array being mounted in the rectangular shell, and the SiPM processing circuit being mounted in the cylindrical shell and electrically connected to the SiPM array; one end of the scintillator being embedded in the rectangular shell and connected to the SiPM array, and the other end of the scintillator being cantilevered away from the cylindrical shell, thereby reducing the size of the scintillator detector, lowering power consumption, and making it suitable for high count rate measurements.

Description

Technical Field

[0001] The present invention relates to the technical field of accelerator beam diagnosis, in particular to a scintillator detector for measuring the microstructure of a slow extraction beam. Background Art

[0002] Scintillation detectors are a commonly used particle detector with extensive applications in accelerators. In principle, particles lose energy when passing through a scintillator, causing the atoms and molecules in the scintillator to ionize or excite, generating photons upon de-excitation. Therefore, a classic scintillator detector consists of a photomultiplier tube (PMT) and a scintillator. However, due to the drawbacks of PMTs, such as large size, high power consumption, high operating voltage, and sensitivity to magnetic fields, and the power loss at high count rates, scintillator detectors composed of PMTs cannot be used for high count rate measurements. Silicon photomultipliers (SiPMs), based on the semiconductor avalanche multiplication mechanism, offer high gain, high time resolution, low operating voltage, and low power consumption, making them inherently advantageous for high count rate measurements.

[0003] Currently, the slow-extraction beams from proton and heavy-ion synchrotrons play an irreplaceable role in nuclear physics experiments, aerospace, materials irradiation, biological breeding, tumor treatment, and drug development. The quality of the slow-extraction beam is crucial for end-user beam utilization and even the success of experiments. This beam quality requires detectors with high temporal resolution and high count rates to measure the slow-extraction microstructure. The measurement and analysis of slow-extraction beam microstructure is a key research topic at proton and heavy-ion synchrotrons.

[0004] Therefore, a new detector suitable for slow extraction microstructure measurement of proton and heavy ion synchrotron is urgently needed to solve the problems of existing scintillator detectors such as large size, high power consumption, and inability to be applied to high count rate measurements. Summary of the Invention

[0005] The present invention aims to address at least one of the technical problems existing in the related art. To this end, the present invention proposes a scintillator detector for measuring slow-extraction beam microstructures. By optimizing the structure of the support shell, the scintillator is integrated with a silicon photomultiplier tube and associated processing circuitry. This results in a smaller detector, lower power consumption, and suitability for high-count-rate measurements.

[0006] The present invention provides a scintillator detector for measuring a slow extraction beam microstructure, the scintillator detector comprising:

[0007] A scintillator, configured as a rectangular plate, is used to receive the beam to generate photons;

[0008] A SiPM array, configured to receive photons generated by the scintillator and output electrical signals;

[0009] A SiPM processing circuit for performing summing and inverse processing on the electrical signal;

[0010] Among them, it also includes a support shell for installing the above components, one end of the support shell is set as a cylindrical shell, and the other end of the support shell is set as a rectangular shell;

[0011] The SiPM array is mounted on the rectangular housing, and the SiPM processing circuit is mounted on the cylindrical housing and electrically connected to the SiPM array;

[0012] One end of the scintillator is embedded in the rectangular shell and connected to the SiPM array, and the other end of the scintillator is cantilevered in a direction away from the cylindrical shell;

[0013] The cylindrical shell is composed of an end cover, a first sleeve, an adapter flange, and a second sleeve connected in sequence along its central axis. The rectangular shell is arranged on the end surface of the second sleeve, and the cavity of the rectangular shell is connected to the cavity of the cylindrical shell.

[0014] The SiPM processing circuit is embedded in the second sleeve, and a flexible cable for connecting the SiPM processing circuit and the SiPM array is passed through the rectangular housing.

[0015] According to a scintillator detector for measuring slow extraction beam microstructure provided by the present invention, the diameter of the second sleeve is larger than that of the first sleeve, and the adapter flange forms an annular end surface between the first sleeve and the second sleeve.

[0016] According to a scintillator detector for measuring slow extraction beam microstructures provided by the present invention, the SiPM processing circuit is provided with a bias interface for realizing the SiPM bias adjustment function, and the end cap is provided with a bias control interface;

[0017] A SiPM control cable is installed in the first sleeve for connecting the bias control interface and the bias interface.

[0018] According to the present invention, a scintillator detector for measuring slow extraction beam microstructure is provided. The scintillator is made of EJ200 scintillating material and its outer surface is wrapped with light-proof tape.

[0019] According to the scintillator detector for measuring slow extraction beam microstructure provided by the present invention, the SiPM processing circuit is provided with SiPM temperature measurement and compensation functions.

[0020] According to a scintillator detector for measuring slow extraction beam microstructure provided by the present invention, the SiPM array is composed of 20 SiPM units, and the SiPM units are coupled to the scintillator.

[0021] According to a scintillator detector for measuring slow extraction beam microstructure provided by the present invention, the end cap is provided with an SMA signal connector, and the SiPM processing circuit is provided with a signal output interface;

[0022] A signal cable is installed in the first sleeve for connecting the SMA signal connector and the signal output interface.

[0023] According to the scintillator detector for measuring slow extraction beam microstructure provided by the present invention, the support shell is made of aluminum material, and the wall thickness of the support shell is 2 mm.

[0024] According to a scintillator detector for measuring slow extraction beam microstructure provided by the present invention, the bias interface and the bias control interface both adopt a Type-C interface.

[0025] The above one or more technical solutions in the present invention have at least one of the following technical effects:

[0026] 1. The scintillator, silicon photomultiplier tube, and related processing circuits are integrated into one through a support shell. The compact structure of the support shell reduces the size of the scintillator detector. The SiPM array greatly reduces the power consumption of the scintillator detector and makes the scintillator detector suitable for high count rate measurements.

[0027] 2. The SiPM processing circuit adopts an adjustable gain circuit design and can be applied to the measurement of ion beams with different energies, such as protons and uranium beams. The use of the SiPM array ensures the stability of the signal amplitude and the accuracy of the counts at high count rates of the scintillator detector.

[0028] 3. One end of the support shell is designed as a cylindrical shell, so that the scintillator detector can be easily installed on the membrane window probe on the accelerator beam line by plugging and unplugging.

[0029] 4. The support shell is made of aluminum, which can shield the influence of the beam on the SiPM processing circuit, so that the scintillator detector has a good signal-to-noise ratio.

[0030] 5. The mechanical structure is reliable, the operation and maintenance are simple and reliable, and it can be used stably for a long time. It can be widely used in the field of accelerator beam diagnosis.

[0031] In addition to the technical problems solved by the present invention, the technical features of the technical solutions constituted, and the advantages brought about by the technical features of these technical solutions described above, other technical features of the present invention and the advantages brought about by these technical features will be further explained in conjunction with the accompanying drawings, or can be understood through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or related technologies, the following briefly introduces the drawings required for use in the embodiments or related technical descriptions. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0033] Figure 1 A schematic diagram of the three-dimensional structure of a scintillator detector provided in an embodiment of the present invention.

[0034] Figure 2 This is a cross-sectional structural diagram of the scintillator detector provided by an embodiment of the present invention along the transverse symmetry plane.

[0035] Figure 3 A schematic diagram of the operation of a scintillator detector provided in an embodiment of the present invention.

[0036] Figure 4 A schematic diagram of offline testing of a scintillator detector provided by an embodiment of the present invention.

[0037] Reference numerals:

[0038] 1. Scintillator; 2. SiPM array; 3. Flexible cable; 4. SiPM processing circuit; 5. Bias interface; 6. Signal output interface; 7. Support shell; 71. End cover; 72. First sleeve; 73. Adapter flange; 74. Second sleeve; 8. Bias control interface; 9. SMA signal connector. DETAILED DESCRIPTION

[0039] To make the objectives, technical solutions, and advantages of the present invention more clear, the technical solutions of the present invention will be clearly described below in conjunction with the accompanying drawings. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0040] Currently, the slow-extraction beams from proton and heavy-ion synchrotrons play an irreplaceable role in nuclear physics experiments, aerospace, materials irradiation, biological breeding, tumor treatment, and drug development. The quality of the slow-extraction beam is crucial for end-user beam utilization and even the success of experiments. This beam quality requires detectors with high temporal resolution and high count rates to measure the slow-extraction microstructure. The measurement and analysis of slow-extraction beam microstructure is a key research topic at proton and heavy-ion synchrotrons.

[0041] Therefore, a new detector suitable for slow extraction microstructure measurement of proton and heavy ion synchrotron is urgently needed to solve the problems of existing scintillator detectors such as large size, high power consumption, and inability to be applied to high count rate measurements.

[0042] In an embodiment of the present invention, a scintillator detector for measuring the microstructure of a slow extraction beam is introduced.

[0043] like Figure 1 and Figure 2 As shown, the scintillator detector mainly includes a scintillator 1, a SiPM array 2, a SiPM processing circuit 4 and a supporting shell 7. The scintillator 1, the SiPM array 2 and the SiPM processing circuit 4 are mounted on the supporting shell 7 to form an integrated structure.

[0044] The scintillator 1 is a rectangular plate for receiving a beam to generate photons. The SiPM array 2 receives the photons generated by the scintillator 1 and outputs an electrical signal. The SiPM processing circuit 4 performs summation and inverse processing on the electrical signal.

[0045] One end of the support shell 7 is configured as a cylindrical shell to ensure that the scintillator detector can be easily installed on the membrane window probe on the accelerator beam line by plugging and unplugging. The other end of the support shell 7 is configured as a rectangular shell to adapt to the shape of the scintillator 1.

[0046] The SiPM array 2 is mounted in a rectangular housing, and the SiPM processing circuit 4 is mounted in a cylindrical housing. The SiPM processing circuit 4 is electrically connected to the SiPM array 2.

[0047] One end of the scintillator 1 is embedded in a rectangular housing and connected to the SiPM array 2. The other end of the scintillator 1 is cantilevered away from the cylindrical housing to receive the beam to generate photons.

[0048] Furthermore, the SiPM array 2 may include multiple SiPM units. Each SiPM unit may include multiple avalanche photodiodes (APDs) operating in Geiger mode. Each APD is a pixel and outputs a charge pulse signal upon receiving a photon. The sum of the charge output by all APDs is proportional to the total number of photons detected by the SiPM unit.

[0049] In this embodiment, the scintillator 1 is integrated with the silicon photomultiplier tube and the related processing circuit through the support shell 7. The compact structure of the support shell 7 is used to reduce the size of the scintillator detector. The power consumption of the scintillator detector is greatly reduced by the SiPM array 2, and the scintillator detector is suitable for high count rate measurement.

[0050] Based on the above embodiment, another embodiment of the present invention introduces a scintillator detector for measuring the microstructure of a slow extraction beam.

[0051] like Figure 2 As shown, the cylindrical shell is composed of an end cover 71, a first sleeve 72, an adapter flange 73 and a second sleeve 74. Moreover, the end cover 71, the first sleeve 72, the adapter flange 73 and the second sleeve 74 are sequentially connected along the central axis of the cylindrical shell.

[0052] A rectangular housing is mounted on the end face of the second sleeve 74. The cavity of the rectangular housing communicates with the cavity of the cylindrical housing. This allows key components, such as the SiPM array 2 and SiPM processing circuit 4, to be sequentially installed within the support shell 7, avoiding interference from the beam.

[0053] Furthermore, the SiPM processing circuit 4 is embedded in the second sleeve 74. A flexible flat cable 3 for connecting the SiPM processing circuit 4 and the SiPM array 2 is passed through the rectangular housing.

[0054] The support shell 7 is made of aluminum material. The wall thickness of the support shell 7 is 2 mm.

[0055] In this embodiment, the optimized design of the support housing 7 ensures a reliable mechanical structure, simple and reliable operation and maintenance, and long-term stable operation, making it widely applicable in the field of accelerator beam diagnostics. Furthermore, the use of aluminum in the support housing 7 shields the SiPM processing circuit 4 from the beam current, resulting in a good signal-to-noise ratio for the scintillator detector.

[0056] Based on the above embodiment, another embodiment of the present invention introduces a scintillator detector for measuring the microstructure of a slow extraction beam.

[0057] In order to ensure that the scintillator detector and the membrane window probe of the accelerator are accurately plugged into each other, the diameter of the second sleeve 74 is set to be larger than the diameter of the first sleeve 72 .

[0058] In this way, the adapter flange 73 forms an annular end surface between the first sleeve 72 and the second sleeve 74 , which can abut against the membrane window probe to play a positioning role when the first sleeve 72 is inserted.

[0059] Based on the above embodiment, another embodiment of the present invention introduces a scintillator detector for measuring the microstructure of a slow extraction beam.

[0060] The scintillator detector mainly includes a scintillator 1, a SiPM array 2, a SiPM processing circuit 4 and a supporting shell 7. The scintillator 1, the SiPM array 2 and the SiPM processing circuit 4 are mounted on the supporting shell 7 to form an integrated structure.

[0061] One end of the support shell 7 is configured as a cylindrical housing to ensure the scintillator detector can be conveniently installed on the membrane window probe on the accelerator beamline by plugging and unplugging. The cylindrical housing consists of an end cap 71, a first sleeve 72, an adapter flange 73, and a second sleeve 74. These three elements are connected in sequence along the central axis of the cylindrical housing.

[0062] The other end of the support shell 7 is configured as a rectangular shell to fit the shape of the scintillator 1. The rectangular shell is disposed on the end surface of the second sleeve 74. The cavity of the rectangular shell is connected to the cavity of the cylindrical shell.

[0063] Furthermore, the SiPM processing circuit 4 is embedded in the second sleeve 74. A flexible flat cable 3 for connecting the SiPM processing circuit 4 and the SiPM array 2 is passed through the rectangular housing.

[0064] To be applicable to the measurement of ion beams with different energies, such as proton to uranium beams, the SiPM processing circuit 4 is provided with a bias interface 5 for implementing the SiPM bias adjustment function. Correspondingly, the end cap 71 is provided with a bias control interface 8.

[0065] The SiPM control cable is installed in the first sleeve 72 to connect the bias control interface 8 and the bias interface 5. The SiPM control cable is a multi-core cable.

[0066] Furthermore, the bias interface 5 adopts a Type-C interface. The bias control interface 8 adopts a Type-C interface.

[0067] Furthermore, the SiPM processing circuit 4 adopts a gain-adjustable circuit design, which can be effectively applied to beam measurements of different beam types and beam energies.

[0068] In addition, the SiPM processing circuit 4 is provided with SiPM temperature measurement and compensation functions.

[0069] In this embodiment, by incorporating a bias interface 5, a gain adjustment circuit, and SiPM temperature measurement and compensation functions into the SiPM processing circuit 4, the scintillator detector achieves faster response times and higher count rates when measuring slow-extraction beam microstructures, enabling more accurate measurement of slow-extraction microstructure information. The scintillator detector's output signal pulse width is 20 nanoseconds, enabling high count rates of up to 5E7 particles per second (pps).

[0070] Based on the above embodiment, another embodiment of the present invention introduces a scintillator detector for measuring the microstructure of a slow extraction beam.

[0071] like Figure 1 and Figure 4 As shown, the scintillator 1 is configured as a rectangular plate for receiving a beam of light to generate photons. The outer surface of the scintillator 1 is wrapped with light-shielding tape. The dimensions of the scintillator 1 are 86 mm x 70 mm x 5 mm. The size and shape of the scintillator 1 are not limited to those shown.

[0072] The scintillator 1 is made of EJ200 scintillating material. EJ200 is a plastic scintillator 1 material produced by Eljen Technology. EJ200 has good mechanical properties and can be easily processed into various shapes and sizes.

[0073] The EJ200 has a high light yield and responds well to high-energy particles (such as fast neutrons).

[0074] The fluorescence decay time of EJ200 is short, and it can quickly return from the excited state to the ground state and emit photons, making it more suitable for application scenarios that require high-speed counting.

[0075] The main luminescence peak of EJ200 is around 425 nanometers, which is in the blue spectrum. The scintillator 1 made of EJ200 scintillating material has good compatibility with silicon photomultiplier tubes.

[0076] Furthermore, the SiPM array 2 is composed of 20 SiPM units, which are coupled to the scintillator 1 .

[0077] The model of the SiPM unit is microfj-30035-tr1, and the outer dimensions of the SiPM unit are 3.16 mm × 3.16 mm.

[0078] In the SiPM array 2 , the number of SiPM units can be determined based on the size of the scintillator 1 .

[0079] Based on the above embodiment, another embodiment of the present invention introduces a scintillator detector for measuring the microstructure of a slow extraction beam.

[0080] The end cap 71 is provided with an SMA signal connector 9. The SiPM processing circuit 4 is provided with a signal output interface 6.

[0081] A signal cable is installed in the first sleeve 72 to connect the SMA signal connector 9 and the signal output interface 6. The signal cable is a radio frequency cable.

[0082] Based on the above embodiment, in another embodiment of the present invention, a method for using a scintillator detector is introduced.

[0083] like Figure 3 As shown, the scintillator 1 is placed in the beam irradiation, and the scintillator 1 generates photons and transmits the photons to the SiPM array 2. The SiPM array 2 receives the photons generated by the scintillator 1 and outputs electrical signals to the SiPM processing circuit 4.

[0084] After the electrical signal passes through the SiPM processing circuit 4, a measurement signal is output. By issuing parameters, the output amplitude is adjusted to adapt to proton and heavy ion beams of different beam types and beam energies.

[0085] The bias control interface 8 of the scintillator detector is connected to the computer via a SiPM control cable, and the SMA signal connector 9 of the scintillator detector is connected to the oscilloscope via a radio frequency cable.

[0086] Furthermore, in another embodiment of the present invention, an offline testing method for a scintillator detector is introduced.

[0087] like Figure 4 As shown, the test method includes: placing an X-ray source close to the scintillator 1; connecting the bias control interface 8 to a personal computer (PC) so that the bias control software can be used to send parameters to control the amplitude of the scintillator detector output signal; and setting the SMA signal connector 9 to connect to an oscilloscope so as to read the scintillator detector output signal through the oscilloscope.

[0088] This method tests the working status of scintillator detectors and provides a standard scintillator detector for ionization chamber calibration. Accurately measuring beam signals with standard scintillator detectors allows for analysis of slow-extraction beam quality, enabling accurate calibration of highly penetrating particles such as protons and light ions like helium, providing support for accelerator beam tuning.

[0089] In the description of the embodiments of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting the embodiments of the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and should not be understood as indicating or implying relative importance.

[0090] In the description of the embodiments of the present invention, it should be noted that, unless otherwise specified or limited, the terms "connected" and "connection" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; and direct connections or indirect connections through an intermediary. Those skilled in the art will understand the specific meanings of the above terms in the embodiments of the present invention based on the specific circumstances.

[0091] In the embodiments of the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Furthermore, a first feature being "above," "above," and "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is at a higher level than the second feature. A first feature being "below," "below," and "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0092] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the embodiments of the present invention. In this specification, the schematic representations of the above terms are not limited to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0093] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present invention.

Claims

1. A scintillator detector for measuring slow extraction beam microstructure, characterized in that: include: A scintillator (1) is configured as a rectangular plate and is used to receive a beam to generate photons; A SiPM array (2) for receiving photons generated by the scintillator (1) and outputting electrical signals; SiPM processing circuit (4) for performing summing and inverse processing on the electrical signal; It also includes a support shell (7) for installing the above components, one end of the support shell (7) is configured as a cylindrical shell, and the other end of the support shell (7) is configured as a rectangular shell; The SiPM array (2) is mounted on the rectangular housing, and the SiPM processing circuit (4) is mounted on the cylindrical housing and electrically connected to the SiPM array (2); One end of the scintillator (1) is embedded in the rectangular shell and connected to the SiPM array (2), and the other end of the scintillator (1) is cantilevered in a direction away from the cylindrical shell; The cylindrical shell is composed of an end cover (71), a first sleeve (72), an adapter flange (73) and a second sleeve (74) connected in sequence along the central axis direction thereof; the rectangular shell is arranged on the end surface of the second sleeve (74); and the cavity of the rectangular shell is in communication with the cavity of the cylindrical shell; The SiPM processing circuit (4) is embedded in the second sleeve (74), and a flexible flat cable (3) for connecting the SiPM processing circuit (4) and the SiPM array (2) is passed through the rectangular housing; The diameter of the second sleeve (74) is greater than the diameter of the first sleeve (72), and the adapter flange (73) forms an annular end surface between the first sleeve (72) and the second sleeve (74).

2. The scintillator detector for measuring slow extraction beam microstructure according to claim 1, characterized in that: The SiPM processing circuit (4) is provided with a bias interface (5) for realizing the SiPM bias adjustment function, and the end cover (71) is provided with a bias control interface (8); A SiPM control cable is installed in the first sleeve (72) and is used to connect the bias control interface (8) and the bias interface (5).

3. The scintillator detector for measuring slow extraction beam microstructure according to claim 1 or 2, characterized in that: The scintillator (1) is made of EJ200 scintillating material and its outer surface is wrapped with light-proof tape.

4. The scintillator detector for measuring slow extraction beam microstructure according to claim 3, characterized in that: The SiPM processing circuit (4) is provided with SiPM temperature measurement and compensation functions.

5. The scintillator detector for measuring slow extraction beam microstructure according to claim 3, characterized in that: The SiPM array (2) is composed of 20 SiPM units, and the SiPM units are coupled to the scintillator (1).

6. The scintillator detector for measuring slow extraction beam microstructure according to claim 1 or 2, characterized in that: The end cap (71) is provided with an SMA signal connector (9), and the SiPM processing circuit (4) is provided with a signal output interface (6); A signal cable is installed in the first sleeve (72) for connecting the SMA signal connector (9) and the signal output interface (6).

7. The scintillator detector for measuring slow extraction beam microstructure according to claim 1 or 2, characterized in that: The support shell (7) is made of aluminum material, and the wall thickness of the support shell (7) is 2 mm.

8. The scintillator detector for measuring slow extraction beam microstructure according to claim 2, characterized in that: The bias voltage interface (5) and the bias voltage control interface (8) both adopt Type-C interfaces.

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