High-luminous-efficiency full-spectrum light source manufacturing method and LED device

Abstract

The invention provides a high-luminous-efficiency full-spectrum light source manufacturing method and an LED device. The method comprises the steps that a metal support is provided; a light-emitting chip is welded to the metal support so that the whole metal support can form a channel, and the wave band range of the light-emitting chip is 400 nm to 480 nm; infrared fluorescent powder and glue are evenly mixed, bubbles are removed, infrared fluorescent powder packaging glue is obtained, the infrared fluorescent powder packaging glue is dispensed above the light-emitting chip, first fluorescent glue is formed, and the waveband range of the infrared fluorescent powder is 680-780 nm; mixing white light combined fluorescent powder with glue to obtain white light combined packaging glue, coating the white light combined packaging glue on the first fluorescent glue, and drying the white light combined packaging glue to obtain the full-spectrum light source with high luminous efficiency.

Description

Technical Field

[0001] The invention belongs to the field of semiconductor technology, and specifically relates to a method for manufacturing a high-light-efficiency full-spectrum light source and an LED device. Background Art

[0002] With the development of full-spectrum technology, full-spectrum light sources similar to the solar spectrum have also been widely used in the lighting field. Light sources such as full-spectrum LEDs can provide a lighting environment closer to natural light, which helps improve people's visual experience and physiological health. At the same time, people's requirements for full-spectrum light sources have also increased. On the one hand, they have put forward high requirements for the fit between the light source spectrum and the solar spectrum, and on the other hand, they have more stringent standards for the energy-saving and light efficiency of the light source.

[0003] At present, in order to improve the fit between the full-spectrum light source and the solar spectrum, infrared phosphors are added to the phosphor combination during the LED light source packaging process to increase the relative power of the 630-780nm band spectrum, thereby obtaining a highly fitting solar-like spectrum. Since infrared phosphors have a large absorption of 420-490nm spectral energy and also have a reabsorption effect on other phosphors, the light efficiency of the light source is greatly reduced. Therefore, it has become a major problem in the development of full-spectrum light sources to meet the requirements of a high color rendering index and a high fit spectrum while also showing high light efficiency performance.

[0004] In order to improve the light efficiency of the light source, the mainstream research directions mainly include three aspects: first, changing the structure of the LED light source; second, improving the LED packaging process; third, improving the LED packaging materials (chips, phosphors, glue). Among them, in terms of process improvement, a multi-layer glue dispensing process is an effective path. Patent CN109659421A announced "A light-emitting device and a lamp having it", which uses red phosphor and green phosphor for layered packaging, and a layer of transparent glue is applied between the red fluorescent glue and the green fluorescent glue, but the process is relatively complicated, and the LED bowl is limited during the actual packaging process, and it is difficult to control the amount of glue using three layers of glue dispensing. Patent CN115332426 A announced "A SMD LED phosphor layered packaging method", which uses red phosphor and green phosphor for layered glue dispensing, thereby improving the excitation efficiency and the reliability of the welding wire, but there are many types of phosphors in the actual packaging process, and only red phosphor and green phosphor cannot meet the high color rendering index performance requirements.

[0005] Disadvantages of existing solutions:

[0006] 1. Complex process: multiple processes are used to complete multi-layer dispensing technology;

[0007] 2. There are many types of phosphors required for full-spectrum light sources with high color rendering index and high fitting degree. The layered dispensing process of red glue and green glue cannot meet the actual requirements of high color rendering index and high fitting degree. Summary of the invention

[0008] In order to solve the above technical problems, the present invention provides a method for manufacturing a high-light-efficiency full-spectrum light source and an LED device, which are used to solve the technical problems of the background technology.

[0009] On the one hand, the invention provides the following technical solution, a method for manufacturing a high-efficiency full-spectrum light source, the method comprising:

[0010] Provide metal bracket;

[0011] Soldering a light-emitting chip to the metal bracket so that the entire metal bracket forms a passage, wherein the wavelength range of the light-emitting chip is 400nm to 480nm;

[0012] The infrared phosphor and glue are mixed evenly and bubbles are removed to obtain an infrared phosphor encapsulation glue, and the infrared phosphor encapsulation glue is dotted on the light-emitting chip to form a first fluorescent glue, wherein the wavelength range of the infrared phosphor is 680nm to 780nm;

[0013] The white light combination phosphor is mixed with glue to obtain a white light combination packaging glue, the white light combination packaging glue is coated on the first fluorescent glue, and then dried to obtain a full-spectrum light source with high light efficiency.

[0014] Compared with the prior art, the present invention has the following beneficial effects:

[0015] 1. The present invention adopts a layered dispensing process of infrared phosphor and white light combined phosphor, which can achieve high fitting and high color rendering index spectrum presentation on the one hand, and improve the light efficiency performance of the full spectrum light source on the other hand; it can improve the light efficiency performance of the full spectrum light source, and at the same time take into account the high fitting degree and high color rendering requirements of the spectrum. A full spectrum light source with high color rendering performance, high fitting degree and high light efficiency is achieved.

[0016] 2. The layered dispensing process of infrared phosphor and white light combined phosphor can meet the diversified needs of phosphor combination, not limited to the types of phosphors.

[0017] Furthermore, there are multiple light-emitting chips.

[0018] Furthermore, the wavelengths of the plurality of light-emitting chips are selected from one or any combination of 435nm-440nm, 440nm-445nm, 445nm-450nm, 452.5nm-457.5nm, and 460nm-475nm.

[0019] Furthermore, the mixing ratio of the infrared fluorescent powder to the glue is in the range of 1:10 to 10:1.

[0020] Furthermore, the ratio of the white light combination phosphor to the glue is in the range of 1:10 to 10:1.

[0021] Furthermore, the white light combination phosphor includes one or any combination of more than one of silicon-based nitride, fluoride, rare earth aluminate, LUAG, rare earth silicate and nitride oxide.

[0022] Furthermore, the wavelength band of the infrared phosphor is selected from one or any combination of 680nm, 695nm, 710nm, 715nm, 750nm and 780nm.

[0023] The present invention also provides an LED device, which is prepared according to the above-mentioned high-light-efficiency full-spectrum light source manufacturing method. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 4 is a flow chart of the preparation method of the high light efficiency full spectrum light source manufacturing method in the first embodiment of the present invention.

[0025] Figure 2 This is a spectrum diagram formed after dispensing the infrared phosphor encapsulation glue in the first embodiment of the present invention.

[0026] Figure 3 This is a spectrum diagram formed after dispensing the white light combination packaging glue in the first embodiment of the present invention.

[0027] Figure 4 This is a spectrum diagram formed after dispensing of the control group 1 in the first embodiment of the present invention. DETAILED DESCRIPTION

[0028] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. Several embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0029] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only.

[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0031] Embodiment 1

[0032] See also Figure 1 , shown is a method for manufacturing a high-efficiency full-spectrum light source in a first embodiment of the present invention, the method comprising the following steps: step 1 to step 4;

[0033] Step 1, providing a metal bracket;

[0034] Specifically, a metal bracket with high thermal conductivity is used.

[0035] Step 2: welding the light emitting chip to the metal bracket so that the entire metal bracket forms a passage, wherein the wavelength range of the light emitting chip is 400nm to 480nm;

[0036] In this embodiment, one or more light-emitting chips are evenly distributed on the metal surface of the bracket using a bonding adhesive, and the positive and negative electrodes of the chip are connected to the bracket surface through metal wires. After welding, a passage is formed in the entire LED bracket (metal bracket).

[0037] Optionally, there are multiple light-emitting chips.

[0038] Optionally, the wavelength bands of the plurality of light-emitting chips are selected from one or any combination of 435nm-440nm, 440nm-445nm, 445nm-450nm, 452.5nm-457.5nm, and 460nm-475nm.

[0039] In this embodiment, chips within the wavelength range of 440nm-445nm, 457nm-460nm, and 467nm-470nm are selected, and the chips are respectively soldered to a bracket bowl with high thermal conductivity through alloy wires.

[0040] Step 3, mixing the infrared phosphor and glue evenly and removing bubbles to obtain infrared phosphor encapsulation glue, and dotting the infrared phosphor encapsulation glue on the light-emitting chip to form a first fluorescent glue, wherein the wavelength range of the infrared phosphor is 680nm to 780nm;

[0041] Optionally, the mixing ratio of the infrared fluorescent powder to the glue is in the range of 1:10 to 10:1.

[0042] Optionally, the wavelength band of the infrared phosphor is selected from one or any combination of 680nm, 695nm, 710nm, 715nm, 750nm and 780nm.

[0043] In this embodiment, infrared phosphors with peak wavelengths of 750nm and 710nm are selected, and the mass ratio of the 750nm to 710nm band phosphors is 4:1, and the total mass of the infrared phosphors and silica gel (glue) are mixed evenly at a mass ratio of 0.5 and degassed to obtain infrared phosphor encapsulation glue, and the infrared phosphor encapsulation glue is evenly applied on the chip, and the amount of glue dispensed is 0.5μL. Then, the dispensed bracket is placed in a high-speed centrifuge and centrifuged to make the infrared phosphor encapsulation glue on the bracket (metal bracket) cup evenly leveled, and the spectrum is obtained. Figure 2 .

[0044] Step 4, mixing the white light combination phosphor with glue to obtain a white light combination packaging glue, coating the white light combination packaging glue on the first fluorescent glue, and drying it to obtain a full-spectrum light source with high light efficiency;

[0045] In this embodiment, 650nm silicon-based nitride red powder R, 540nm rare earth silicate yellow powder Y, and 490nm nitrogen oxide cyan powder Q are selected, and the mass ratio of each phosphor is R:Y:Q=5:13:2. The phosphor and glue are evenly mixed and degassed according to the total mass ratio of glue to phosphor of 1.4 to obtain white light combination packaging glue. The white light combination packaging glue is evenly coated on the chip with a dispensing amount of 2.0μL, and the glue is evenly leveled on the first fluorescent glue. Then, it is placed in an oven for baking to obtain a full-spectrum light source with high light efficiency and high fitting degree, and the spectrum is obtained. Figure 3 .

[0046] Control group 1:

[0047] (1) Select a chip combination solution consistent with the first embodiment and perform a soldering process;

[0048] (2) After the infrared phosphor encapsulation glue and the white light combination encapsulation glue are fully mixed according to the glue ratio in Example 1, the mixed glue is applied on the chip to ensure that the glue is level and does not overflow, and then dried to obtain the spectrum. Figure 4 .

[0049] Embodiment 2

[0050] The method for manufacturing a high-efficiency full-spectrum light source in the second embodiment of the present invention comprises the following steps: Step 2.1 to Step 2.5:

[0051] Step 2.1, select chips in the wavelength range of 440nm-445nm, 455nm-460nm, and 470nm-472.5nm, and respectively solder the chips to the support bowl with high thermal conductivity through alloy wires.

[0052] Step 2.2, select infrared phosphor with a peak wavelength of 750 nm, mix them evenly according to the total mass of infrared phosphor to glue mass ratio of 0.75, and perform degassing treatment to obtain infrared phosphor encapsulation glue.

[0053] Step 2.3, select 660nm silicon-based nitride red powder R, 530nm LUAG yellow powder Y, and 490nm nitrogen oxide cyan powder Q, and the mass ratio of each phosphor is R:Y:Q=7:39:3, and the phosphor and glue are evenly mixed according to the total mass ratio of glue to phosphor of 1.65, and degassing is performed to obtain a white light combination packaging glue;

[0054] Step 2.4, evenly apply the infrared phosphor encapsulation glue on the chip with a dispensing amount of 0.4 μL, place the dispensing bracket in a high-speed centrifuge, and perform centrifugal treatment to make the infrared phosphor encapsulation glue on the bracket bowl evenly leveled.

[0055] Step 2.5, evenly apply the white light combination packaging glue on the infrared phosphor packaging glue, with a dispensing amount of 2.05 μL, and place it in an oven for baking to obtain a full-spectrum light source with high light efficiency and high fitting degree.

[0056] Control group 2:

[0057] (1) Select a chip combination solution consistent with the second embodiment and perform a soldering process;

[0058] (2) After the infrared packaging glue and the white light combination packaging glue are fully mixed according to the glue ratio in Example 2, the mixed glue is applied on the chip to ensure that the glue is level and does not overflow, and then dried.

[0059] Table 1 shows the specific photoelectric parameters of control group 1, control group 2, embodiment 1 and embodiment 2. This information shows that this light source improves the luminous efficiency performance of the full-spectrum light source.

[0060] Table 1 Implementation case parameter information

[0061]

[0062] Embodiment 3

[0063] A third embodiment of the present invention provides an LED device, which is manufactured according to the above-mentioned method for manufacturing a high-efficiency full-spectrum light source.

[0064] In summary, the high-efficiency full-spectrum light source manufacturing method and LED device in the above embodiments of the present invention are:

[0065] 1. The present invention adopts a layered dispensing process of infrared phosphor and white light combined phosphor, which can achieve high fitting and high color rendering index spectrum presentation on the one hand, and improve the light efficiency performance of the full spectrum light source on the other hand; it can improve the light efficiency performance of the full spectrum light source, and at the same time take into account the high fitting degree and high color rendering requirements of the spectrum. A full spectrum light source with high color rendering performance, high fitting degree and high light efficiency is achieved.

[0066] 2. The layered dispensing process of infrared phosphor and white light combined phosphor can meet the diversified needs of phosphor combination, not limited to the types of phosphors.

[0067] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0068] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent of the present invention. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A method for manufacturing a high-efficiency full-spectrum light source, characterized in that: The method comprises: Provide metal bracket; Soldering a light-emitting chip to the metal bracket so that the entire metal bracket forms a passage, wherein the wavelength range of the light-emitting chip is 400nm to 480nm; The infrared phosphor and glue are mixed evenly and bubbles are removed to obtain an infrared phosphor encapsulation glue, and the infrared phosphor encapsulation glue is dotted on the light-emitting chip to form a first fluorescent glue, wherein the wavelength range of the infrared phosphor is 680nm to 780nm; The white light combination phosphor is mixed with glue to obtain a white light combination packaging glue, the white light combination packaging glue is coated on the first fluorescent glue, and then dried to obtain a full-spectrum light source with high light efficiency.

2. The method for manufacturing a high-efficiency full-spectrum light source according to claim 1, characterized in that: The number of the light emitting chips is multiple.

3. The method for manufacturing a high-efficiency full-spectrum light source according to claim 2, characterized in that: The wavelengths of the light-emitting chips are selected from one or any combination of 435nm-440nm, 440nm-445nm, 445nm-450nm, 452.5nm-457.5nm, and 460nm-475nm.

4. The method for manufacturing a high-efficiency full-spectrum light source according to claim 1, characterized in that: The mixing ratio of the infrared fluorescent powder to the glue is in the range of 1:10 to 10:

1.

5. The method for manufacturing a high-efficiency full-spectrum light source according to claim 1, characterized in that: The ratio of the white light combination phosphor to the glue is in the range of 1:10 to 10:

1.

6. The method for manufacturing a high-efficiency full-spectrum light source according to claim 1, characterized in that: The white light combination phosphor includes one or any combination of silicon-based nitride, fluoride, rare earth aluminate, LUAG, rare earth silicate and nitrogen oxide.

7. The method for manufacturing a high-efficiency full-spectrum light source according to claim 1, characterized in that: The wavelength band of the infrared phosphor is selected from one of 680nm, 695nm, 710nm, 715nm, 750nm and 780nm or any combination of more than one.

8. An LED device, characterized in that: The LED device is manufactured according to the method for manufacturing a high-efficiency full-spectrum light source according to any one of claims 1 to 7.

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