Driving control circuit and power supply system

By using MOS tubes and integrated power modules in the drive control circuit of new energy vehicles, the problems of high power consumption, low efficiency and poor stability in the existing technology are solved, and more efficient and stable driving control is achieved.

CN119995377APending Publication Date: 2025-05-13CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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Patent Information

Application Number
CN202311515510.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-11-13
Publication Date
2025-05-13

AI Technical Summary

Technical Problem

The existing three-phase full-bridge drive control method has problems such as high power consumption, low efficiency and poor stability in new energy vehicles.

Method used

The MOS tube is used for push-pull output, combined with the integrated power module, including a first driving unit, a first control unit and a power unit, and the power unit, the power tube parallel structure is enabled through the series structure of a single-channel driver chip and the MOS tube.

Benefits of technology

It reduces driving loss, enhances driving capability, improves the overall operating efficiency of the system, reduces parasitic inductance and switching losses, and improves circuit stability and switching response speed.

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Abstract

The invention provides a driving control circuit and a power supply system, the driving control circuit comprises a first driving unit, a first control unit and a power unit, the power unit is realized by adopting a power module and comprises a first power tube parallel structure; the first driving unit is used for providing a first driving signal; and the first control unit comprises a first MOS tube and a second MOS tube which are connected in series, are controlled by the first driving signal and are used for performing on-off control on the first MOS tube and the second MOS tube according to the first driving signal so as to drive the first power tube parallel structure to be turned on or turned off. According to the invention, the problems of high power consumption, low efficiency, poor stability and the like of the existing driving control mode are solved.
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Description

Technical Field

[0001] The present invention relates to the technical field of electronic circuit design, and in particular to a drive control circuit and a power supply system. Background Art

[0002] With the development of new energy, more and more new energy vehicles have emerged in recent years, making the application of power devices develop by leaps and bounds.

[0003] At present, new energy vehicles use a three-phase full-bridge drive control method. As the power increases, the driving capability of power devices also needs to become stronger. However, the existing solution of using a driver chip to control the transistor for push-pull output and ultimately drive a single-tube parallel power tube structure has many disadvantages such as high power consumption, low efficiency, and poor stability.

[0004] In view of this, providing a new drive control method to overcome the above-mentioned shortcomings is a technical problem that technical personnel in this field are eager to solve. Summary of the invention

[0005] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a drive control circuit and a power supply system for solving the problems of the existing drive control method such as high power consumption, low efficiency and poor stability.

[0006] In order to achieve the above-mentioned object and other related objects, the present invention provides a drive control circuit, the drive control circuit comprising:

[0007] A first driving unit, a first control unit and a power unit, wherein the power unit is implemented by a power module and includes a first power tube parallel structure;

[0008] The first driving unit is used to provide a first driving signal;

[0009] The first control unit includes a first MOS tube and a second MOS tube, which are connected in series and controlled by the first drive signal, and are used to control the first MOS tube and the second MOS tube to switch on or off according to the first drive signal to drive the first power tube parallel structure to turn on or off.

[0010] Optionally, the first driving unit is implemented by a single-channel driver chip, and is used to convert the first input signal into the first driving signal output.

[0011] Optionally, the first driving unit further includes a first capacitor, a second capacitor, a first resistor, a first diode and a second diode;

[0012] The low-side power supply terminal of the single-channel driver chip is connected to the working voltage and connected to the reference ground via the first capacitor, the input terminal is connected to the first input signal, the common ground terminal is connected to the reference ground, the high-side floating ground terminal is connected to the negative end of the first diode, the output terminal outputs the first driving signal via the first resistor, and the high-side floating power supply terminal is connected to the negative end of the second diode and connected to the negative end of the first diode via the second capacitor;

[0013] A positive end of the first diode is connected to a reference ground, and a positive end of the second diode is connected to the operating voltage.

[0014] Optionally, the first driving unit further includes a third capacitor, a second resistor, a third resistor and a third diode;

[0015] The current detection end of the single-channel driver chip is connected to the negative end of the first diode via the third capacitor, the second resistor and the third resistor are connected in series between the positive end of the third diode and the negative end of the first diode and their connection node is connected to the current detection end, and the negative end of the third diode is connected to the drain end of the first power tube parallel structure.

[0016] Optionally, the first control unit further includes a fourth resistor, a fifth resistor and a fourth diode;

[0017] The first MOS transistor and the second MOS transistor are connected in series between the high-side floating power supply terminal and the high-side floating ground terminal of the single-channel driver chip, and the gate terminals are connected to each other and connected to the first driving signal;

[0018] A first end of the fourth resistor is connected to a connection node between the first MOS transistor and the second MOS transistor, and a second end thereof is connected to a control end of the parallel structure of the first power transistor;

[0019] The negative end of the fourth diode is connected to the connection node between the first MOS tube and the second MOS tube, and the positive end is connected to the control end of the first power tube parallel structure via the fifth resistor.

[0020] Optionally, the first control unit further includes a sixth resistor, a first end of which is connected to a connection node between the first MOS transistor and the second MOS transistor, and a second end of which is connected to a positive end of a third diode.

[0021] Optionally, the drive control circuit also includes a first voltage regulator tube, which is arranged one-to-one with the first power tube in the first power tube parallel structure; wherein the positive end of the first voltage regulator tube is connected to the source end of the first power tube, and the negative end is connected to the control end of the first power tube.

[0022] Optionally, the power module further includes a second power tube parallel structure, and the first power tube parallel structure and the second power tube parallel structure are connected in series between the positive terminal of the battery and the reference ground; the drive control circuit further includes a second drive unit and a second control unit;

[0023] The second driving unit is used to provide a second driving signal;

[0024] The second control unit includes a third MOS tube and a fourth MOS tube, which are connected in series and controlled by the second drive signal, and are used to control the switching of the third MOS tube and the fourth MOS tube according to the second drive signal to drive the second power tube parallel structure to turn on or off.

[0025] Optionally, the second driving unit has the same circuit structure as the first driving unit, and the second control unit has the same circuit structure as the first control unit.

[0026] Optionally, the drive control circuit also includes a second voltage regulator tube, which is arranged one-to-one with the second power tube in the second power tube parallel structure; wherein the positive end of the second voltage regulator tube is connected to the source end of the second power tube, and the negative end is connected to the control end of the second power tube.

[0027] The present invention also provides a power supply system, which includes the drive control circuit as described above.

[0028] As described above, the drive control circuit and power supply system of the present invention adopts MOS tube for push-pull output, which can reduce drive loss, enhance drive capability, improve the overall operation efficiency of the system, and help improve the switch response speed. The use of integrated power modules can improve the consistency difference of single tubes and improve circuit stability; at the same time, the parasitic inductance is greatly reduced, the switching time of the power tube is reduced, the switching loss is reduced, and the overall efficiency of the system is improved; in addition, since the parasitic inductance is greatly reduced, the peak voltage will also be relatively reduced, so there is no need to set RC absorption circuits at the drain and source ends of the power tube, which reduces circuit loss, improves efficiency, and saves costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 Shown is a schematic diagram of a drive control circuit.

[0030] Figure 2 Shown is a schematic diagram of the driving control circuit shown in Example 1.

[0031] Figure 3 Shown is a schematic diagram of the driving control circuit shown in the second embodiment.

[0032] Component number description

[0033] 100 drive control circuit

[0034] 110a First driving unit

[0035] 111a First single channel driver chip

[0036] 110b Second drive unit

[0037] 111b Second single channel driver chip

[0038] 120a First control unit

[0039] 120b Second control unit

[0040] 130 Power Unit

[0041] 131 First power tube parallel structure

[0042] 132 Second power tube parallel structure

[0043] 140 Microcontroller DETAILED DESCRIPTION

[0044] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0045] See also Figures 1 to 3 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the form, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0046] Figure 1 A driving control circuit is shown, including a microcontroller, two IR2127S driving chips, an upper tube push-pull structure composed of transistors Q1 and Q2, a lower tube push-pull structure composed of transistors Q3 and Q4, an upper power tube structure in a single-tube parallel form composed of power tubes Q5, Q6 and Q7, a lower power tube structure in a single-tube parallel form composed of power tubes Q8, Q9 and Q10, a first capacitor C1 to an eighth capacitor C8, a first resistor R1 to a twentieth resistor R20, and a first diode D1 to an eighth diode D8, wherein the connection relationship of each part is as shown in FIG. Figure 1 shown.

[0047] The driving control methods of the upper power tube structure and the lower power tube structure are the same. Take the driving control of the upper power tube structure as an example; the microcontroller sends a PWM signal (such as PWM_H) and drives the transistors Q1 and Q2 to turn on or off through the IR2127S driver chip, thereby driving the power tubes Q5, Q6 and Q7 to turn on or off.

[0048] When PWM_H is at a high potential, the driving signal HO output by the IR2127S driver chip is at a high potential, that is, the potential at point a is at a high potential. At this time, the transistor Q1 is turned on, the transistor Q2 is turned off, the potential at point b is at a high potential, and the power tubes Q5, Q6 and Q7 are driven to turn on respectively through the fourth resistor R4;

[0049] When PWM_H is at a low potential, the driving signal HO output by the IR2127S driver chip is at a low potential, that is, the potential at point a is at a low potential. Since the power tubes Q5, Q6 and Q7 are in the on state, the potential at point b is at a high potential. At this time, the transistor Q2 is turned on, the transistor Q1 is turned off, and the gate-source charges of the power tubes Q5, Q6 and Q7 are respectively discharged through their respective driving resistors, the fourth resistor R4, the fifth resistor R5, the fourth diode D4 and the transistor Q2 to complete the shutdown.

[0050] During the power tube startup process, the loss of transistor Q1 satisfies the formula P Q1 =R1×I be +0.7×I ce For high-power single-tube parallel connection, the drive current needs to be at least 3A. Taking the drive current of 3A as an example, I ce =3A,I be =0.04×I ce =0.04×3A=0.12A, R1=20Ω, then P Q1 =20×0.12+0.7×3=4.5W; During the shutdown process of the power tube, the instantaneous current generally reaches 5A, so the loss of transistor Q2 is P Q2 =0.7×5=3.5W; Thus, in a switching process of the power tube, the instantaneous loss of the push-pull output of transistors Q1 and Q2 is 8W; where R1 is the resistance value of the first resistor, I be is the base-emitter current of transistor Q1, I ce is the collector-emitter current of transistor Q1. In addition, the single-tube parallel solution requires adding a driving resistor (such as R13-R15) at the gate end of each power tube, and the driving resistor will also cause a part of the loss due to the driving current during the opening process.

[0051] At the same time, during the power tube startup process, combined with the voltage and current changes of the power tube, it can be seen that the current is generated before the drain-source voltage of the power tube drops to zero, and this overlapping area will produce startup loss, and its startup loss satisfies the formula Similarly, during the shutdown process of the power tube, combined with the voltage and current changes of the power tube, it can be seen that the drain-source voltage begins to rise before the current of the power tube drops to zero, and this overlapping area will produce shutdown loss, and its shutdown loss satisfies the formula Among them, P on is the turn-on loss, P off is the turn-off loss, f sw is the switching frequency of the power tube, V ds(off_begin) is the drain-source voltage when the power tube is turned on, V ds(off_end) is the drain-source voltage when the power tube is turned off, I d(off_on) is the current when the power tube is turned on, I d(on_off) is the current when the power tube is turned off, and t(x) is the time when the power tube is turned on.

[0052] From the above two formulas, it can be seen that when V ds and I d When the switching time is constant, the shorter the switching time, the smaller the switching loss; however, short switching time will cause a new problem, namely the breakdown (BV) problem of the power tube. The analysis is as follows: switching will cause the current change rate problem, namely the di / dt problem, and the control circuit board composed of the power tube structure and its drive control part will have its own parasitic inductance. Therefore, during the switching process, the V ds A peak voltage will be generated, satisfying the formula V 尖峰 =L 寄生 ×di / dt. Peak voltage V 尖峰 Mainly related to parasitic inductance L 寄生 Related to the current change rate di / dt, for the single-tube parallel solution, the parasitic inductance L 寄生 Large (in the single-tube parallel solution, due to the setting of the driving resistor and the RC absorption circuit composed of the nineteenth resistor R19 and the seventh capacitor C7, the line from the positive terminal BAT+ of the battery to the drain terminal of the upper power tube structure is long, resulting in a large parasitic inductance). In order not to increase the peak voltage V 尖峰 , it is necessary to reduce the current change rate di / dt, and the current I d When the voltage remains unchanged, the only way is to increase the turn-on and turn-off time of the power tube, but this will increase the switching loss.

[0053] Therefore, the above-mentioned drive control circuit has the following disadvantages: 1) The triode is a current-type driving device with high power consumption; 2) The power tube structure adopts a single-tube parallel scheme, and there are consistency differences among the power tubes, resulting in poor circuit stability; 3) The single-tube parallel scheme requires adding a driving resistor at the gate of each power tube. Due to the unequal length of the driving lines and the discreteness of the driving resistors, the working states of the power tubes may be quite different, resulting in poor circuit stability; 4) In the single-tube parallel scheme, the parasitic inductance between the power tube structure and the control circuit board is large. In order to avoid the power tube from being broken down, the turn-on and turn-off time of the power tube needs to be increased, which leads to increased switching losses. At the same time, the setting of the RC absorption circuit not only increases the circuit loss, but also reduces the circuit efficiency; 5) The circuit power is large, and the reference ground will float due to excessive current, causing the power tube to be turned on by mistake, causing the upper and lower power tubes to be directly connected, resulting in the burning of the power tube.

[0054] To solve Figure 1 In order to solve the many technical problems existing in the driving control circuit shown, the applicant proposed the driving control circuit 100 described in the embodiment of the present invention.

[0055] Embodiment 1

[0056] like Figure 2 As shown, this embodiment provides a driving control circuit 100 , including a first driving unit 110 a , a first control unit 120 a and a power unit 130 ; further, it also includes a microcontroller 140 .

[0057] The first driving unit 110a is configured to provide a first driving signal HO.

[0058] As an example, the first driving unit 110a is implemented using a single-channel driver chip (such as an IR2127S chip) to convert the first input signal PWM_H into a first driving signal HO output; in fact, when the first input signal PWM_H is at a high potential, the first driving signal HO is at a high potential, and when the first input signal PWM_H is at a low potential, the first driving signal HO is at a low potential.

[0059] It should be noted that in order to distinguish the single-channel driver chip in this embodiment from that in the second embodiment, the single-channel driver chip in this embodiment is recorded as the first single-channel driver chip 111a, and the single-channel driver chips appearing below in this embodiment are all represented by the first single-channel driver chip 111a.

[0060] In applications, the first single-channel driver chip 111a is generally configured with peripheral matching devices. In a possible implementation, the first driving unit 110a further includes a first capacitor C1, a second capacitor C2, a first resistor R1, a first diode D1 and a second diode D2; wherein, the low-side power supply terminal VCC of the first single-channel driver chip 111a is connected to the operating voltage (e.g., 15V) and is connected to the reference ground via the first capacitor C1, the input terminal IN is connected to the first input signal PWM_H, the common ground terminal COM is connected to the reference ground, the high-side floating ground terminal VS is connected to the negative end of the first diode D1, the output terminal HO outputs the first driving signal HO via the first resistor R1, the high-side floating power supply terminal VB is connected to the negative end of the second diode D2 and is connected to the negative end of the first diode D1 via the second capacitor C2; the positive end of the first diode D1 is connected to the reference ground, and the positive end of the second diode D2 is connected to the operating voltage (e.g., 15V).

[0061] In fact, the first single-channel driver chip 111a also includes a fault indication terminal FAULT and a current detection terminal CS. When the corresponding function is not used, the corresponding port can be left floating. When the fault indication function is used, the fault indication terminal FAULT of the first single-channel driver chip 111a is connected to the first fault indication signal FA1. When the current detection function is used, the first driving unit 110a also includes a third capacitor C3, a second resistor R2, a third resistor R3 and a third diode D3, wherein the current detection terminal CS of the first single-channel driver chip 111a is connected to the negative end of the first diode D1 via the third capacitor C3, the second resistor R2 and the third resistor R3 are connected in series between the positive end of the third diode D3 and the negative end of the first diode D1 and their connection node is connected to the current detection terminal CS, and the negative end of the third diode D3 is connected to the drain end of the first power tube parallel structure 131 in the power unit 300.

[0062] The first control unit 120a includes a first MOS transistor M1 and a second MOS transistor M2, which are connected in series and controlled by a first drive signal HO, and are used to control the first MOS transistor M1 and the second MOS transistor M2 to switch according to the first drive signal HO, so as to drive the first power transistor parallel structure 131 in the power unit 130 to turn on or off.

[0063] Among them, the first MOS tube M1 is an NMOS tube, the second MOS tube M2 is a PMOS tube, the first MOS tube M1 and the second MOS tube M2 are connected in series between the high-side floating power supply terminal VB and the high-side floating ground terminal VS of the first single-channel driver chip 111a (for example, the drain end of the first MOS tube M1 is connected to the high-side floating power supply terminal VB of the first single-channel driver chip 111a, the source end is connected to the source end of the second MOS tube M2, and the drain end of the second MOS tube M2 is connected to the high-side floating ground terminal VS of the first single-channel driver chip 111a), and the gate ends are connected to each other and connected to the first drive signal HO.

[0064] As an example, the first control unit 120a further includes a fourth resistor R4, a fifth resistor R5 and a fourth diode D4; further, a sixth resistor R6. The first end of the fourth resistor R4 is connected to the connection node of the first MOS transistor M1 and the second MOS transistor M2, and the second end is connected to the control end of the first power transistor parallel structure 131; the negative end of the fourth diode D4 is connected to the connection node of the first MOS transistor M1 and the second MOS transistor M2, and the positive end is connected to the control end of the first power transistor parallel structure 131 via the fifth resistor R5. The first end of the sixth resistor R6 is connected to the connection node of the first MOS transistor M1 and the second MOS transistor M2, and the second end is connected to the positive end of the third diode D3.

[0065] When the first driving signal HO is at a high potential, the potential at point a is at a high potential. At this time, the first MOS tube M1 is turned on, the second MOS tube M2 is turned off, and the potential at point b is pulled up to nearly 15V. In this way, the gate-source junction capacitance of each first power tube in the first power tube parallel structure 131 is charged via the fourth resistor R4 to complete the turning on of the power tube; when the first driving signal HO is at a low potential, the potential at point a is at a low potential. Since each first power tube in the first power tube parallel structure 131 is in an on state, the potential at point b is at a high potential. At this time, the first MOS tube M1 is turned off, the second MOS tube M2 is turned on, and the gate-source junction capacitance of each first power tube in the first power tube parallel structure 131 is discharged via the fourth resistor R4, the fifth resistor R5, the fourth diode D4 and the second MOS tube M2 to complete the turning off of the power tube.

[0066] Among them, during the power tube startup process, assuming that the drive current I dri is 3A, the internal resistance of the first MOS tube M1 is R dson is 10mΩ, then the loss P of the first MOS tube M1 is M1 =I dri 2 ×R dson =3 2 ×0.01=0.09W; Similarly, when the power tube is turned off, the loss of the second MOS tube M2 is P M2 The loss P of the first MOS tube M1 M1 The same is also 0.09W; thus, in a switching process of the power tube, the instantaneous loss of the first MOS tube M1 and the second MOS tube M2 for push-pull output is 0.18W, which is much smaller than the instantaneous loss of 8W for push-pull output using the existing triode. It can be seen that when the MOS tube is used to replace the existing triode for push-pull output, since the MOS tube is a voltage-type driving device, the driving loss will be reduced, the driving ability will be enhanced, and the overall operating efficiency of the system will be improved; moreover, in the case of driving the high-power first power tube parallel structure 131, the switching response speed will also be faster.

[0067] The power unit 130 is implemented by a power module, including a first power tube parallel structure 131. Taking the first power tube parallel structure 131 including two parallel first power tubes Q11 and Q12 as an example, the two first power tubes Q11 and Q12 are both NMOS tubes, the gate ends are connected to each other and serve as the control end of the first power tube parallel structure 131, the drain ends are connected to each other and serve as the drain end of the first power tube parallel structure 131 to connect to the positive end BAT+ of the battery, and the source ends are connected to each other and serve as the source end of the first power tube parallel structure 131 to connect to the reference ground; of course, the number of first power tubes in parallel in the first power tube parallel structure 131 can also be more, such as three, four, etc., which is determined by actual application requirements and is achieved by selecting the power module, and this embodiment does not limit this.

[0068] The use of an integrated power module to replace the existing single-tube parallel solution can improve the problem of poor stability caused by the consistency differences of each single tube in the single-tube parallel solution; at the same time, the use of an integrated power module is beneficial to shorten the line length from the positive terminal BAT+ of the battery to the drain end of the power tube because the power module itself is small in size and simple to drive, and does not require a driving resistor, so that the parasitic inductance is greatly reduced. In this way, the current change rate di / dt can be increased accordingly, thereby reducing the switching time of the power tube, reducing switching losses, and improving the overall efficiency of the system; in addition, since the parasitic inductance is greatly reduced, the peak voltage will also be relatively reduced. Therefore, there is no need to set an RC absorption circuit at the drain and source ends of the power tube, which reduces circuit losses, improves efficiency and saves costs.

[0069] Furthermore, the drive control circuit 100 also includes a first voltage regulator tube, the number of which is equal to the number of the first power tubes in the first power tube parallel structure 131, and the first voltage regulator tubes are arranged one-to-one with the first power tubes; wherein the positive end of the first voltage regulator tube is connected to the source end of the first power tube, and the negative end is connected to the control end of the first power tube. By connecting the bidirectional first voltage regulator tube in parallel to the gate end and the source end of the first power tube, it is possible to avoid the reference ground voltage from rising due to excessive current, so as to break through the gate end of the power tube, effectively protect the power tube, and improve the safety and reliability of the system.

[0070] Taking the first power tube parallel structure 131 including two parallel first power tubes Q11 and Q12 as an example, at this time, the drive control circuit 100 includes two first voltage-stabilizing tubes Z11 and Z12, wherein the positive end of the first voltage-stabilizing tube Z11 is connected to the source end of the first power tube Q11, and the negative end is connected to the control end of the first power tube Q11, and the positive end of the first voltage-stabilizing tube Z12 is connected to the source end of the first power tube Q12, and the negative end is connected to the control end of the first power tube Q12.

[0071] The microcontroller 140 is used to provide a first input signal PWM_H. When the first single-channel driver chip 111 a uses a fault indication function, the microcontroller 140 is also used to provide a first fault indication signal FA1 .

[0072] Embodiment 2

[0073] like Figure 3 As shown, compared with the first embodiment, the power module 130 of this embodiment also includes a second power tube parallel structure 132, wherein the first power tube parallel structure 131 and the second power tube parallel structure 132 are connected in series between the battery positive terminal BAT+ and the reference ground; at this time, the drive control circuit 100 also includes a second drive unit 110b and a second control unit 120b.

[0074] The second driving unit 110b is configured to provide a second driving signal LO.

[0075] As an example, the second driving unit 110b is implemented using a single-channel driver chip (such as an IR2127S chip) to convert the second input signal PWM_L into a second driving signal LO output; in fact, when the second input signal PWM_L is at a high potential, the second driving signal LO is at a high potential, and when the second input signal PWM_L is at a low potential, the second driving signal LO is at a low potential.

[0076] It should be noted that in order to distinguish the single-channel driver chip in this embodiment from that in the first embodiment, the single-channel driver chip in this embodiment is recorded as the second single-channel driver chip 111b, and the single-channel driver chips appearing below in this embodiment are all represented by the second single-channel driver chip 111b.

[0077] In application, the second single-channel driver chip 111b is generally configured with peripheral matching devices. In a possible implementation, the second driving unit 110b also includes a fourth capacitor C4, a fifth capacitor C5, a seventh resistor R7, a fifth diode D5 and a sixth diode D6; wherein, the low-side power supply terminal VCC of the second single-channel driver chip 111b is connected to the operating voltage (such as 15V) and connected to the reference ground via the fourth capacitor C4, the input terminal IN is connected to the second input signal PWM_L, the common ground terminal COM is connected to the reference ground, the high-side floating ground terminal VS is connected to the negative end of the fifth diode D5, the output terminal LO outputs the second driving signal LO via the seventh resistor R7, the high-side floating power supply terminal VB is connected to the negative end of the sixth diode D6 and connected to the negative end of the fifth diode D5 via the fifth capacitor C5; the positive end of the fifth diode D5 is connected to the reference ground, and the positive end of the sixth diode D6 is connected to the operating voltage (such as 15V).

[0078] In fact, the second single-channel driver chip 111b also includes a fault indication terminal FAULT and a current detection terminal CS. When the corresponding function is not used, the corresponding port can be left floating. When the fault indication function is used, the fault indication terminal FAULT of the second single-channel driver chip 111b is connected to the second fault indication signal FA2. When the current detection function is used, the second driving unit 110b also includes a sixth capacitor C6, an eighth resistor R8, a ninth resistor R9 and a seventh diode D7, wherein the current detection terminal CS of the second single-channel driver chip 111b is connected to the negative end of the fifth diode D5 via the sixth capacitor C6, the eighth resistor R8 and the ninth resistor R9 are connected in series between the positive end of the seventh diode D7 and the negative end of the fifth diode D5 and their connection node is connected to the current detection terminal CS, and the negative end of the seventh diode D7 is connected to the drain end of the second power tube parallel structure 132.

[0079] The second control unit 120b includes a third MOS tube M3 and a fourth MOS tube M4, which are connected in series and controlled by a second drive signal LO, and are used to control the third MOS tube M3 and the fourth MOS tube M4 according to the second drive signal LO to drive the second power tube parallel structure 132 to turn on or off.

[0080] Among them, the third MOS tube M3 is an NMOS tube, the fourth MOS tube M4 is a PMOS tube, the third MOS tube M3 and the fourth MOS tube M4 are connected in series between the high-side floating power supply terminal VB and the high-side floating ground terminal VS of the second single-channel driver chip 111b (for example, the drain end of the third MOS tube M3 is connected to the high-side floating power supply terminal VB of the second single-channel driver chip 111b, the source end is connected to the source end of the fourth MOS tube M4, and the drain end of the fourth MOS tube M4 is connected to the high-side floating ground terminal VS of the second single-channel driver chip 111b), and the gate ends are connected to each other and connected to the second drive signal LO.

[0081] As an example, the second control unit 120b further includes a tenth resistor R10, an eleventh resistor R11 and an eighth diode D8; further, a twelfth resistor R12. The first end of the tenth resistor R10 is connected to the connection node of the third MOS tube M3 and the fourth MOS tube M4, and the second end is connected to the control end of the second power tube parallel structure 132; the negative end of the eighth diode D8 is connected to the connection node of the third MOS tube M3 and the fourth MOS tube M4, and the positive end is connected to the control end of the second power tube parallel structure 132 via the eleventh resistor R11. The first end of the twelfth resistor R12 is connected to the connection node of the third MOS tube M3 and the fourth MOS tube M4, and the second end is connected to the positive end of the seventh diode D7.

[0082] In the power module, the number of first power tubes in the first power tube parallel structure 131 is the same as the number of second power tubes in the second power tube parallel structure 132, and each power tube is an NMOS tube; taking the first power tube parallel structure 131 including two parallel first power tubes Q11 and Q12 and the second power tube parallel structure 132 including two parallel second power tubes Q21 and Q22 as an example, the gate ends of the first power tubes Q11 and Q12 are connected to each other and serve as the control end of the first power tube parallel structure 131, the drain ends of the first power tubes Q11 and Q12 are connected to each other and serve as the drain end of the first power tube parallel structure 131 to connect to the positive terminal BAT+ of the battery, the source end of the first power tube Q11 is connected to the drain end of the second power tube Q21, and the gate end of the first power tube Q12 is connected to the positive terminal BAT+ of the battery. The source end is connected to the drain end of the second power tube Q22, the gate ends of the second power tubes Q21 and Q22 are connected to each other and serve as the control end of the second power tube parallel structure 132, the source ends of the second power tubes Q21 and Q22 are connected to each other and serve as the source end of the second power tube parallel structure 132 to connect to the reference ground, wherein the source ends of the first power tubes Q11 and Q12 are connected to each other and serve as the source end of the first power tube parallel structure 131, and the drain ends of the second power tubes Q21 and Q22 are connected to each other and serve as the drain end of the second power tube parallel structure 132; of course, the number of corresponding power tubes connected in parallel in the corresponding power tube parallel structure can also be more, such as three, four, etc., which is determined by actual application requirements and is achieved by selecting the power module, and this embodiment does not limit this.

[0083] Furthermore, the drive control circuit 100 also includes a second voltage regulator tube, the number of which is equal to the number of the second power tubes in the second power tube parallel structure 132, and the second voltage regulator tubes are arranged one-to-one with the second power tubes; wherein the positive end of the second voltage regulator tube is connected to the source end of the second power tube, and the negative end is connected to the control end of the second power tube. By connecting a bidirectional second voltage regulator tube in parallel to the gate end and the source end of the second power tube, it is possible to avoid the reference ground voltage from rising due to excessive current, thereby breaking through the gate end of the power tube, effectively protecting the power tube, and improving the safety and reliability of the system.

[0084] Taking the second power tube parallel structure 131 including two parallel second power tubes Q21 and Q22 as an example, at this time, the drive control circuit 100 includes two second voltage-stabilizing tubes Z21 and Z22, wherein the positive end of the second voltage-stabilizing tube Z21 is connected to the source end of the second power tube Q21, and the negative end is connected to the control end of the second power tube Q21, and the positive end of the second voltage-stabilizing tube Z22 is connected to the source end of the second power tube Q22, and the negative end is connected to the control end of the second power tube Q22.

[0085] The microcontroller 140 is used to provide a second input signal PWM_L. When the second single-channel driver chip 111 b uses a fault indication function, the microcontroller 140 is also used to provide a second fault indication signal FA2 .

[0086] It should be noted that the driving control method of the second power tube parallel structure 132 is the same as the driving control method of the first power tube parallel structure 131 . The relevant contents can be found in the first embodiment and will not be described again here.

[0087] Embodiment 3

[0088] This embodiment provides a power supply system, including the drive control circuit 100 as described in the first or second embodiment. In fact, the power supply system usually adopts the method of controlling the upper tube and the lower tube together. In this case, the power supply system adopts the drive control circuit 100 as described in the second embodiment, wherein the first power tube parallel structure 131 in the power module serves as the upper tube, and the second power tube parallel structure 132 serves as the lower tube.

[0089] In summary, a drive control circuit and power supply system of the present invention adopts MOS tubes for push-pull output, which can reduce drive loss, enhance drive capability, improve the overall operating efficiency of the system, and help improve the switch response speed. The use of an integrated power module can improve the consistency difference of a single tube and improve circuit stability; at the same time, it greatly reduces parasitic inductance, reduces the switching time of the power tube, reduces switching losses, and improves the overall efficiency of the system; in addition, since the parasitic inductance is greatly reduced, the peak voltage will also be relatively reduced. Therefore, there is no need to set an RC absorption circuit at the drain and source ends of the power tube, which reduces circuit loss, improves efficiency, and saves costs. Therefore, the present invention effectively overcomes the various shortcomings of the prior art and has a high industrial utilization value.

[0090] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A drive control circuit, characterized in that: The drive control circuit comprises: A first driving unit, a first control unit and a power unit, wherein the power unit is implemented by a power module and includes a first power tube parallel structure; The first driving unit is used to provide a first driving signal; The first control unit includes a first MOS tube and a second MOS tube, which are connected in series and controlled by the first drive signal, and are used to control the first MOS tube and the second MOS tube to switch on or off according to the first drive signal to drive the first power tube parallel structure to turn on or off.

2. The drive control circuit according to claim 1, characterized in that: The first driving unit is implemented by a single-channel driver chip and is used to convert the first input signal into the first driving signal for output.

3. The drive control circuit according to claim 2, characterized in that: The first driving unit further includes a first capacitor, a second capacitor, a first resistor, a first diode and a second diode; The low-side power supply terminal of the single-channel driver chip is connected to the working voltage and connected to the reference ground via the first capacitor, the input terminal is connected to the first input signal, the common ground terminal is connected to the reference ground, the high-side floating ground terminal is connected to the negative end of the first diode, the output terminal outputs the first driving signal via the first resistor, and the high-side floating power supply terminal is connected to the negative end of the second diode and connected to the negative end of the first diode via the second capacitor; A positive end of the first diode is connected to a reference ground, and a positive end of the second diode is connected to the operating voltage.

4. The drive control circuit according to claim 3, characterized in that: The first driving unit further includes a third capacitor, a second resistor, a third resistor and a third diode; The current detection end of the single-channel driver chip is connected to the negative end of the first diode via the third capacitor, the second resistor and the third resistor are connected in series between the positive end of the third diode and the negative end of the first diode and their connection node is connected to the current detection end, and the negative end of the third diode is connected to the drain end of the first power tube parallel structure.

5. The drive control circuit according to any one of claims 2 to 4, characterized in that: The first control unit also includes a fourth resistor, a fifth resistor and a fourth diode; The first MOS transistor and the second MOS transistor are connected in series between the high-side floating power supply terminal and the high-side floating ground terminal of the single-channel driver chip, and the gate terminals are connected to each other and connected to the first driving signal; A first end of the fourth resistor is connected to a connection node between the first MOS transistor and the second MOS transistor, and a second end thereof is connected to a control end of the parallel structure of the first power transistor; The negative end of the fourth diode is connected to the connection node between the first MOS tube and the second MOS tube, and the positive end is connected to the control end of the first power tube parallel structure via the fifth resistor.

6. The drive control circuit according to claim 5, characterized in that: The first control unit also includes a sixth resistor, a first end of which is connected to a connection node between the first MOS transistor and the second MOS transistor, and a second end of which is connected to a positive end of a third diode.

7. The drive control circuit according to claim 1, characterized in that: The drive control circuit also includes a first voltage regulator tube, which is arranged in a one-to-one correspondence with the first power tube in the first power tube parallel structure; wherein the positive end of the first voltage regulator tube is connected to the source end of the first power tube, and the negative end is connected to the control end of the first power tube.

8. The drive control circuit according to claim 1, characterized in that: The power module further includes a second power tube parallel structure, wherein the first power tube parallel structure and the second power tube parallel structure are connected in series between the positive terminal of the battery and the reference ground; the drive control circuit further includes a second drive unit and a second control unit; The second driving unit is used to provide a second driving signal; The second control unit includes a third MOS tube and a fourth MOS tube, which are connected in series and controlled by the second drive signal, and are used to control the switching of the third MOS tube and the fourth MOS tube according to the second drive signal to drive the second power tube parallel structure to turn on or off.

9. The drive control circuit according to claim 8, characterized in that: The second driving unit has the same circuit structure as the first driving unit, and the second control unit has the same circuit structure as the first control unit.

10. The drive control circuit according to claim 8, characterized in that: The drive control circuit also includes a second voltage regulator tube, which is arranged one-to-one with the second power tube in the second power tube parallel structure; wherein the positive end of the second voltage regulator tube is connected to the source end of the second power tube, and the negative end is connected to the control end of the second power tube.

11. A power supply system, characterized in that: The power supply system comprises a drive control circuit as described in any one of claims 1-10.