Double-sided heat dissipation type packaging structure and packaging structure

Abstract

The invention discloses a double-sided heat dissipation type packaging structure and a packaging structure. The packaging structure comprises a plate body, an inner metal layer, a metal piece and a buffer conductor. The inner metal layer is arranged on the inner side of the plate body and comprises a connecting block. The metal piece is provided with a first section, and the first section faces the connecting block in a spaced mode. The first section and the connecting block are provided with concave and convex surfaces which are complementary in appearance, and a gap is formed between the first section and the connecting block. And the buffer conductor is positioned in the gap and is connected with the first section and the connecting block so as to jointly form an expansion joint. The buffer conductor has a thermal expansion coefficient which is smaller than the thermal expansion coefficient of the inner metal layer and is also smaller than the thermal expansion coefficient of the metal piece. Therefore, the packaging structure effectively solves the problem of connection between two components caused by expansion with heat and contraction with cold.

Description

Technical Field

[0001] The present application relates to a packaging structure, and more particularly to a double-sided heat dissipation packaging structure and a packaging structure using an expansion joint. Background Art

[0002] In the existing packaging structure, the joint surface of any two components embedded in the packaging body is often affected by thermal expansion and contraction, which causes defects in the existing packaging structure (such as delamination or cracks). Therefore, the applicant believes that the above defects can be improved, so he has devoted himself to research and applied scientific principles, and finally proposed an invention with a reasonable design and effective improvement of the above defects. Summary of the invention

[0003] The present application provides a double-sided heat dissipation packaging structure and a packaging structure, which can effectively improve the defects that may occur in the existing packaging structure.

[0004] The present application discloses a double-sided heat dissipation packaging structure, which comprises: a first heat dissipation plate, comprising a first plate body and a first inner metal layer arranged inside the first plate body; wherein the first inner metal layer comprises at least one solid crystal block and at least one first support column; at least one chip is arranged in the at least one solid crystal block; a second heat dissipation plate, comprising a second plate body and a second inner metal layer arranged inside the second plate body; wherein the second inner metal layer comprises: at least one positioning block, which clamps at least one chip with the at least one solid crystal block; and at least one second support column, whose end faces the end of at least one first support column at intervals along a thickness direction; wherein the end of at least one first support column and the end of at least one second support column have concave-convex surfaces with complementary shapes to each other, and a first gap is formed between each other; and at least one first buffer conductor is located in the first gap and connects the end of at least one first support column and the end of at least one second support column to jointly form at least one first expansion joint; wherein the at least one first buffer conductor has a thermal expansion coefficient, which is smaller than the thermal expansion coefficient of the first inner metal layer and also smaller than the thermal expansion coefficient of the second inner metal layer.

[0005] Optionally, along a lateral direction perpendicular to the thickness direction, the concave-convex surface of at least one first support column partially overlaps the concave-convex surface of at least one second support column.

[0006] Optionally, the double-sided heat dissipation packaging structure further includes a packaging body formed on the first plate body and the second plate body, and the first inner metal layer, the second inner metal layer, at least one chip and at least one first expansion joint are all buried in the packaging body.

[0007] Optionally, the first heat dissipation plate includes a first outer metal layer, which is arranged on the outside of the first plate body; the second heat dissipation plate includes a second outer metal layer, which is arranged on the outside of the second plate body; wherein the outer surface of the first outer metal layer and the outer surface of the second outer metal layer are both exposed outside the packaging body.

[0008] Optionally, the first heat sink and the second heat sink are each a direct copper-clad ceramic substrate, the first plate body and the second plate body are each a ceramic plate body, and the first inner metal layer is sintered and fixed to the first plate body, and the second inner metal layer is sintered and fixed to the second plate body.

[0009] Optionally, the first heat sink and the second heat sink are each an active metal brazed ceramic substrate, the first plate body and the second plate body are each a ceramic plate body, and the first inner metal layer is brazed fixed to the first plate body, and the second inner metal layer is brazed fixed to the second plate body.

[0010] Optionally, the number of at least one first expansion joint is plural, and the number of at least one chip is plural, and a first expansion joint is arranged between any two adjacent chips.

[0011] Optionally, the double-sided heat dissipation packaging structure further includes a buffer conductive layer connected between at least one chip and at least one positioning block; wherein, at least one chip has a chip thermal expansion coefficient, and the thermal expansion coefficient of the buffer conductive layer is smaller than the thermal expansion coefficient of the second inner metal layer and greater than the thermal expansion coefficient of the chip.

[0012] Optionally, the buffer conductive layer and the first plate are separated by a configuration distance in the thickness direction, and the distance between at least one first buffer conductor and the first plate is 95% to 105% of the configuration distance.

[0013] Optionally, at least one chip has a chip thermal expansion coefficient, and the thermal expansion coefficient of at least one first buffer conductor is not greater than 250% of the chip thermal expansion coefficient.

[0014] Optionally, a material of the at least one first buffer conductor includes at least one of aluminum silicon carbide, aluminum silicon alloy, molybdenum, tungsten, copper-molybdenum alloy and copper-tungsten alloy.

[0015] Optionally, the first inner metal layer includes a connecting block, and the double-sided heat dissipation packaging structure further includes: a metal part, which has a first section, which faces the connecting block at intervals along the thickness direction; wherein the first section and the connecting block have concave and convex surfaces with complementary appearances and form a second gap between each other; and a second buffer conductor, which is located within the second gap and connects the first section and the connecting block to jointly form a second expansion joint; wherein the second buffer conductor has a thermal expansion coefficient, which is smaller than the thermal expansion coefficient of the first inner metal layer and also smaller than the thermal expansion coefficient of the metal part; wherein, along a lateral direction perpendicular to the thickness direction, the concave and convex surface of the connecting block partially overlaps the concave and convex surface of the metal part.

[0016] The present application also discloses a double-sided heat dissipation packaging structure, which includes: two heat dissipation plates, which are arranged at intervals from each other along a thickness direction, and each of the two heat dissipation plates is formed with a support column; wherein the ends of the two support columns are spaced apart from each other along the thickness direction and face each other, and the ends of the two support columns have concave and convex surfaces with complementary shapes, and a gap is formed between each other; a chip, which is arranged between the two heat dissipation plates, and the chip has a chip thermal expansion coefficient; and a buffer conductor, which is located in the gap and connects the ends of the two support columns to jointly form an expansion joint; wherein the buffer conductor has a thermal expansion coefficient, which is not greater than 250% of the thermal expansion coefficient of the chip.

[0017] Optionally, the double-sided heat dissipation packaging structure further includes a spacer, and the spacer is disposed on the chip so that the spacer and the chip are clamped between two heat dissipation plates.

[0018] The present application further discloses a packaging structure, which includes: a metal layer, including a connecting block; a metal part, having a first section, which faces the connecting block at intervals along a thickness direction; wherein the first section and the connecting block have concave and convex surfaces with complementary shapes and a gap formed between each other; and a buffer conductor, located in the gap and connecting the first section and the connecting block to jointly form an expansion joint; wherein the buffer conductor has a thermal expansion coefficient, which is smaller than the thermal expansion coefficient of the metal layer and also smaller than the thermal expansion coefficient of the metal part.

[0019] Optionally, the packaging structure further includes: a packaging body formed on the metal layer, and the expansion joint is buried in the packaging body.

[0020] Optionally, along a lateral direction perpendicular to the thickness direction, the concave-convex surface of the connecting block partially overlaps the concave-convex surface of the metal piece.

[0021] Optionally, the metal layer includes a solid crystal block separated from the connecting block, and the packaging structure further includes a chip, which is arranged in the solid crystal block and buried in the packaging body; wherein the chip has a chip thermal expansion coefficient, and the thermal expansion coefficient of the buffer conductor is not greater than 250% of the chip thermal expansion coefficient; wherein the metal part has a second section, which is connected to the chip and its inner side is buried in the packaging body.

[0022] Optionally, the package structure includes a buffer conductive layer connecting the chip and the second segment, and the chip is electrically coupled to the connection block through the buffer conductive layer, the metal piece and the buffer conductor.

[0023] Optionally, the chip includes a first connection pad and a second connection pad spaced apart from each other, the buffer conductive layer is disposed on the first connection pad, the metal layer includes a bonding block spaced apart from the connection block and the die bonding block, and the packaging structure has a metal wire connecting the bonding block and the second connection pad.

[0024] In summary, the double-sided heat dissipation packaging structure and packaging structure disclosed in the present application can form a concave and convex surface with complementary appearance between two corresponding components and connect them with the buffer conductor having a specific thermal expansion coefficient so that the buffer conductor has the functions of stress buffering and conductive transmission, thereby effectively improving the bonding problems (such as: delamination defects, peeling defects, or crack defects) between the two components caused by thermal expansion and contraction.

[0025] To further understand the features and technical contents of the invention, please refer to the following detailed description and drawings of the present application. However, such description and drawings are only used to illustrate the present application and are not intended to limit the scope of protection of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a three-dimensional schematic diagram of the double-sided heat dissipation packaging structure of the first embodiment of the present application.

[0027] Figure 2 for Figure 1 Schematic cross-sectional view along section line II-II.

[0028] Figure 3 for Figure 2 An enlarged schematic diagram of region III.

[0029] Figure 4 for Figure 1 Schematic diagram of the manufacturing process of the double-sided heat dissipation packaging structure (I).

[0030] Figure 5 for Figure 1 Schematic diagram of the manufacturing process of the double-sided heat dissipation packaging structure (II).

[0031] Figure 6 for Figure 1 Schematic diagram of the manufacturing process of the double-sided heat dissipation packaging structure (III).

[0032] Figure 7 It is a three-dimensional schematic diagram of the packaging structure of the second embodiment of the present application.

[0033] Figure 8 for Figure 7 Schematic cross-sectional view along section line VIII-VIII.

[0034] Fig. 9 for Figure 8 Schematic diagram of enlarged area IX.

[0035] Fig.10 for Figure 7 A three-dimensional schematic diagram of the packaging structure after omitting the packaging body.

[0036] Fig.11 It is a cross-sectional schematic diagram of the double-sided heat dissipation packaging structure of the third embodiment of the present application.

[0037] Fig.12 for Fig.11 The exploded diagram after omitting the package body. DETAILED DESCRIPTION

[0038] The following is an explanation of the implementation methods of the "double-sided heat dissipation packaging structure and packaging structure" disclosed in this application through specific embodiments. Those skilled in the art can understand the advantages and effects of this application from the contents disclosed in this specification. This application can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this application. In addition, the drawings of this application are only simple schematic illustrations and are not depicted according to actual dimensions. It is stated in advance. The following implementation methods will further explain the relevant technical contents of this application in detail, but the disclosed contents are not intended to limit the scope of protection of this application.

[0039] It should be understood that, although the terms "first", "second", "third", etc. may be used herein to describe various components or signals, these components or signals should not be limited by these terms. These terms are mainly used to distinguish one component from another component, or one signal from another signal. In addition, the term "or" used herein may include any one or more combinations of the associated listed items depending on the actual situation.

[0040] Embodiment 1

[0041] See also Figures 1 to 6 As shown, it is the first embodiment of the present application. Figures 1 to 3As shown, this embodiment discloses a double-sided heat dissipation packaging structure 100, which includes a first heat dissipation plate 1, a second heat dissipation plate 2 facing the first heat dissipation plate 1, at least one chip 3 and at least one first buffer conductor 4 located between the first heat dissipation plate 1 and the second heat dissipation plate 2, a buffer conductive layer 5 connecting at least one of the chips 3 and the second heat dissipation plate 2, a second buffer conductor 6 arranged on the first heat dissipation plate 1, a metal part 7 fixed to the second buffer conductor 6 and a packaging body 8 formed on the first heat dissipation plate 1 and the second heat dissipation plate 2.

[0042] It should be noted that, although the double-sided heat dissipation packaging structure 100 is described in this embodiment as including the above-mentioned components, the present application is not limited thereto. For example, in other embodiments not shown in the present application, at least one of the buffer conductive layer 5, the second buffer conductor 6, the metal member 7 and the packaging body 8 in the double-sided heat dissipation packaging structure 100 can also be omitted according to design requirements. Furthermore, the number of at least one first buffer conductor 4 and the number of at least one chip 3 are described as multiple in this embodiment, but are not limited thereto.

[0043] Each of the chips 3 has a chip coefficient of thermal expansion (CTE), and any of the chips 3 in this embodiment can be a silicon carbide (SiC) chip, a gallium nitride (GaN) chip or a metal oxide semiconductor field effect transistor (Metal Oxide Semiconductor Field Effect Transistor, MOSFET) chip for illustration, and the chip coefficient of thermal expansion can be between 3 and 5, but the present application is not limited thereto.

[0044] The first heat sink 1 includes a first plate body 11, a first inner metal layer 12 disposed inside the first plate body 11, and a first outer metal layer 13 disposed outside the first plate body 11. The specific structure of the first inner metal layer 12 can be adjusted according to actual needs, and the first inner metal layer 12 includes at least one die-bonding block 121, at least one first support column 122, and a connecting block 123 in this embodiment.

[0045] In more detail, at least one of the die-bonding blocks 121 is in the form of a thin sheet and is provided for at least one of the chips 3, so the number of at least one of the die-bonding blocks 121 is preferably equal to (or not less than) the number of at least one of the chips 3. Each of the chips 3 is preferably connected to the corresponding die-bonding block 121 through a conductive adhesive layer (not shown), but not limited thereto. Furthermore, the number of at least one of the first support pillars 122 can be multiple and spaced apart, and the connection block 123 is located at the outer edge of the first inner metal layer 12.

[0046] The second heat sink 2 includes a second plate body 21, a second inner metal layer 22 disposed inside the second plate body 21, and a second outer metal layer 23 disposed outside the second plate body 21. The specific structure of the second inner metal layer 22 can be adjusted according to actual needs, and the second inner metal layer 22 includes at least one positioning block 221 and at least one second support column 222 in this embodiment.

[0047] In more detail, the first heat sink 1 and the second heat sink 2 are spaced apart from each other along a thickness direction H, and at least one of the positioning blocks 221 is columnar and together with at least one of the solid crystal blocks 121 clamps at least one of the chips 3 (that is, at least one of the chips 3 is clamped between the first heat sink 1 and the second heat sink 2), so the number of at least one of the positioning blocks 221 is preferably not less than the number of at least one of the chips 3.

[0048] Furthermore, at least one of the first support columns 122 may be in plural numbers and arranged at intervals, and the end 2221 of each of the second support columns 222 faces the end 1221 of one of the first support columns 122 at intervals along the thickness direction H. The end 1221 of each of the first support columns 122 and the end 2221 of the corresponding second support column 222 have concave-convex surfaces with complementary shapes, and a first gap is formed between them.

[0049] It should be additionally explained that the first heat sink 1 and the second heat sink 2 preferably each adopt a direct bonded copper (DBC) ceramic substrate; that is, the first board body 11 and the second board body 21 are each a ceramic board body, and the first inner metal layer 12 is sintered and fixed to the first board body 11, and the second inner metal layer 22 is sintered and fixed to the second board body 21.

[0050] In addition, the first heat sink 1 and the second heat sink 2 can also each adopt an active metal brazing (AMB) ceramic substrate; that is, the first plate body 11 and the second plate body 21 are each a ceramic plate body, and the first inner metal layer 12 is brazed and fixed to the first plate body 11, and the second inner metal layer 22 is brazed and fixed to the second plate body 21.

[0051] Each of the first buffer conductors 4 is located within one of the first gaps and connects the end 1221 of the first support column 122 and the end 2221 of the second support column 222 to form a first expansion joint J1. In addition, one first expansion joint J1 is preferably provided between any two adjacent chips 3. It should be noted that the multiple expansion joints J of the double-sided heat dissipation packaging structure 100 have substantially the same or similar structures, so for ease of description, the relevant structure of a single first expansion joint J1 will be first introduced below, but the present application is not limited thereto.

[0052] In this embodiment, along a lateral direction D perpendicular to the thickness direction H, the concave-convex surface of the first support column 122 partially overlaps the concave-convex surface of the second support column 222, so that the relative position or assembly of the first support column 122 and the second support column 222 can be laterally limited to each other to achieve the effect of structural alignment, thereby effectively avoiding the occurrence of joint misalignment or open circuit.

[0053] That is, the thickness of the first buffer conductor 4 must be controlled to be sufficient to make the concave-convex surface of the first support column 122 partially overlap the concave-convex surface of the second support column 222. Furthermore, the lateral direction D in this embodiment may refer to any direction perpendicular to the thickness direction H.

[0054] Furthermore, the first buffer conductor 4 has a thermal expansion coefficient that is smaller than the thermal expansion coefficient of the first inner metal layer 12 (e.g., 16-17) and the thermal expansion coefficient of the second inner metal layer 22 (e.g., 16-17), and the thermal expansion coefficient of the first buffer conductor 4 is preferably not greater than 250% of the thermal expansion coefficient of the chip, so that the first buffer conductor 4 has the functions of stress buffering and conductive transmission, thereby effectively improving the bonding problems between components caused by thermal expansion and contraction; such as delamination defects, peeling defects, or crack defects. For example, the material of the first buffer conductor 4 can include at least one of aluminum silicon carbide (AlSiC), aluminum silicon (Al-Si) alloy, molybdenum (Mo), tungsten (W), copper-molybdenum alloy, copper-tungsten alloy, and other conductive materials, but the present application is not limited thereto.

[0055] Each of the chips 3 is connected to the corresponding positioning block 221 via the buffer conductive layer 5. In this embodiment, the buffer conductive layer 5 includes a plurality of buffer blocks 51 separated from each other, and each of the chips 3 is connected to the corresponding positioning block 221 via at least one of the buffer blocks 51.

[0056] The buffer conductive layer 5 and the first plate body 11 are separated by a configuration distance H5 in the thickness direction H, and the distance between the first buffer conductor 4 and the first plate body 11 is 95% to 105% of the configuration distance H5. That is, the buffer conductive layer 5 in this embodiment can be substantially located within the space where the expansion joint J extends in a direction perpendicular to the thickness direction H.

[0057] In more detail, the thermal expansion coefficient of the buffer conductive layer 5 is smaller than the thermal expansion coefficient of the second inner metal layer 22, and larger than the thermal expansion coefficient of the chip (e.g., the thermal expansion coefficient of the buffer conductor 6a is preferably not greater than 250% of the thermal expansion coefficient of the chip), so that the buffer conductive layer 5 has the functions of stress buffering and conductive transmission, thereby effectively improving the bonding problems between components caused by thermal expansion and contraction; such as: delamination defects, peeling defects or crack defects.

[0058] In this embodiment, the material of the buffer conductive layer 5 is preferably the same as that of the first buffer conductor 4, so as to facilitate the production of the double-sided heat dissipation packaging structure 100, but the present application is not limited thereto. For example, the material of the first buffer conductor 4 and the material of the buffer conductive layer 5 can be two of aluminum silicon carbide, aluminum silicon alloy, molybdenum, tungsten, copper-molybdenum alloy, copper-tungsten alloy and other conductive materials.

[0059] The metal member 7 is described as a pin in a long strip in this embodiment, and the metal member 7 has a first section 71 and a second section 72 extending from the first section 71. The first section 71 faces the connection block 123 at intervals along the thickness direction H, and the first section 71 and the connection block 123 have concave and convex surfaces with complementary shapes, and a second gap is formed between them.

[0060] The second buffer conductor 6 is located within the second gap and connects the first section 71 and the connection block 123 to form a second expansion joint J2. In the transverse direction D, the concave-convex surface of the connection block 123 partially overlaps the concave-convex surface of the metal member 7, so that the relative position or assembly of the connection block 123 and the metal member 7 can be laterally limited to each other to achieve the effect of structural alignment, thereby effectively avoiding the occurrence of joint misalignment or open circuit. In other words, the thickness of the second buffer conductor 6 must be controlled to be sufficient to make the concave-convex surface of the connection block 123 partially overlap the concave-convex surface of the metal member 7.

[0061] Furthermore, the second buffer conductor 6 has a thermal expansion coefficient, which is smaller than the thermal expansion coefficient of the first inner metal layer 12 and also smaller than the thermal expansion coefficient of the metal part 7 (e.g., 16 to 17), and the thermal expansion coefficient of the second buffer conductor 6 is preferably not greater than 250% of the thermal expansion coefficient of the chip, so that the buffer conductive layer 5 has the functions of stress buffering and conductive transmission, thereby effectively improving the bonding problems between components caused by thermal expansion and contraction; such as: delamination defects, peeling defects or crack defects.

[0062] In this embodiment, the material of the second buffer conductor 6 is preferably the same as that of the first buffer conductor 4 and the buffer conductive layer 5, so as to facilitate the production of the double-sided heat dissipation packaging structure 100, but the present application is not limited thereto. For example, the material of the first buffer conductor 4, the material of the buffer conductive layer 5, and the material of the second buffer conductor 6 can be at least two of aluminum silicon carbide, aluminum silicon alloy, molybdenum, tungsten, copper-molybdenum alloy, copper-tungsten alloy and other conductive materials.

[0063] It should be additionally noted that, although the structural matching method between the first inner metal layer 12, the metal member 7, and the second buffer conductor 6 is described in this embodiment as matching the above-mentioned components and being applied to the double-sided heat dissipation packaging structure 100, the present application is not limited thereto. For example, the structural matching method between the first inner metal layer 12, the metal member 7, and the second buffer conductor 6 can also be independently applied to other packaging structures.

[0064] The first inner metal layer 12 , the second inner metal layer 22 , each of the chips 3 , and each of the first buffer conductors 4 (or each of the first expansion joints J1 ), the buffer conductive layer 5 , the second buffer conductor 6 (or the second expansion joints J2 ) and the first section 71 of the metal part 7 are all buried in the package body 8 .

[0065] Furthermore, the outer edges of the first outer metal layer 13 and the second outer metal layer 23 are covered by the packaging body 8, and the outer surfaces of the first outer metal layer 13 and the second outer metal layer 23 are both exposed outside the packaging body 8, and the second section 72 of the metal part passes through the packaging body 8 and is used for welding and fixing to an external component.

[0066] In addition, the above is a structural description of the double-sided heat dissipation packaging structure 100 of this embodiment, and the following briefly introduces its production process. Figure 4 As shown, the first inner metal layer 12 of the first heat sink 1 and the second inner metal layer 22 of the second heat sink 2 are respectively formed with two patterned surfaces corresponding to each other (having a plurality of the solid crystal blocks 121, a plurality of the first support pillars 122, the connecting blocks 123, a plurality of the positioning blocks 221 and a plurality of the second support pillars 222) by etching and / or electroplating.

[0067] like Figure 5 As shown, the plurality of chips 3 are respectively mounted on the plurality of die-bonding blocks 121 of the first heat sink 1, and the first section 71 of the metal member 7 is connected with the second buffer conductor 6 (eg: Figure 3 ) is connected to the connecting block 123, thereby forming the second expansion joint J2. Figure 6 As shown, a plurality of the first buffer conductors 4 are respectively disposed on the ends 1221 of a plurality of the first support pillars 122 , and a plurality of the buffer conductive layers 5 are disposed on the plurality of the chips 3 .

[0068] like Figure 2 As shown, the plurality of positioning blocks 221 of the second heat sink 2 are bonded to the buffer conductive layer 5, and the plurality of second support columns 222 of the second heat sink 2 are bonded to the plurality of first buffer conductors 4, thereby forming a plurality of first expansion joints J1; thereafter, the package body 8 in which the first inner metal layer 12 and the second inner metal layer 22 are buried is formed on the first heat sink 1 and the second heat sink 2.

[0069] Embodiment 2

[0070] See also Figures 7 to 10As shown, it is the second embodiment of the present application. Since this embodiment is similar to the above-mentioned first embodiment, the similarities between the two embodiments will not be repeated, and the differences between this embodiment and the above-mentioned first embodiment are roughly described as follows:

[0071] This embodiment discloses a packaging structure 100a, which includes a metal layer 12a, a chip 3 and a buffer conductor 6a disposed on the metal layer, a buffer conductive layer 5 disposed on the chip 3, a metal member 7 and a metal wire 9 electrically coupling the metal layer 12a and the chip 3, and a packaging body 8 formed on the metal layer 12a, but the present application is not limited thereto. For example, the structural matching method between the metal layer 12a, the buffer conductor 6a, and the metal member 7 can also be independently applied to other packaging structures.

[0072] In this embodiment, the metal layer 12a includes a die-bonding block 121, a connection block 123, and a wire-bonding block 124 that are spaced apart from each other, and the connection block 123 and the wire-bonding block 124 are located on the same side of the die-bonding block 121. Furthermore, the chip 3 is disposed in the die-bonding block 121, and the chip 3 is preferably connected to the die-bonding block 121 through a conductive adhesive layer (not shown), but the present application is not limited thereto.

[0073] The metal member 7 has a first section 71 and a second section 72 at opposite ends, and the first section 71 faces the connection block 123 at intervals along a thickness direction H, while the second section 72 is connected to the chip 3. The chip 3 and the second section 72 are connected to each other via the buffer conductive layer 5.

[0074] In this embodiment, the chip 3 includes a first connection pad 31 and a second connection pad 32 which are spaced apart from each other, the buffer conductive layer 5 is disposed on the first connection pad 31, and the bonding block 124 and the second connection pad 32 are connected by the metal wire 9. In other words, the second connection pad 32 of the chip 3 and the bonding block 124 of the metal layer 12a can be electrically coupled to each other through the metal wire 9.

[0075] Specifically, the first section 71 of the metal member 7 and the connecting block 123 of the metal layer 12a have concave-convex surfaces that are complementary to each other and form a gap therebetween. In a transverse direction D perpendicular to the thickness direction H, the concave-convex surface of the connecting block 123 partially overlaps the concave-convex surface of the metal member 7.

[0076] Furthermore, the buffer conductor 6a is located in the gap and connects the first section 71 and the connection block 123 to form an expansion joint J. Accordingly, the chip 3 in this embodiment can be electrically coupled to the connection block 123 through the buffer conductive layer 5, the metal member 7, and the buffer conductor 6a.

[0077] The thermal expansion coefficient of the buffer conductor 6a is smaller than the thermal expansion coefficient of the metal layer 12a and the thermal expansion coefficient of the metal part 7, and the thermal expansion coefficient of the buffer conductor 6a is preferably not greater than 250% of the chip thermal expansion coefficient of the chip. Accordingly, the buffer conductor 6a has the functions of stress buffering and conductive transmission, thereby effectively improving the bonding problems between components caused by thermal expansion and contraction; such as: delamination defects, peeling defects, or crack defects. For example, the material of the buffer conductor 6a can include at least one of aluminum silicon carbide, aluminum silicon alloy, molybdenum, tungsten, copper-molybdenum alloy, copper-tungsten alloy and other conductive materials, but the present application is not limited thereto.

[0078] In addition, the inner surface of the metal layer 12a, the chip 3, the buffer conductive layer 5, the buffer conductor 6a (or the expansion joint J), the inner surface of the metal member 7, and the metal wire 9 are all buried in the package body 8. Furthermore, the outer surface of the metal layer 12a and the outer surface of the metal member 7 are exposed outside the package body 8. In addition, the metal member 7 is preferably formed with a plurality of notches 73 at its edge, and the package body 8 is filled in the plurality of notches 73, so as to improve the bonding strength between the metal member 7 and the package body 8.

[0079] Embodiment 3

[0080] See also Fig.11 and Fig.12 As shown, it is the third embodiment of the present application. Since this embodiment is similar to the first embodiment, the similarities between the two embodiments will not be described in detail, and the differences between this embodiment and the first embodiment are roughly described as follows:

[0081] In this embodiment, the double-sided heat dissipation packaging structure 100 further includes a plurality of spacers 10, and at least one spacer 10 is arranged on each of the chips 3, so that each of the chips 3 and the corresponding spacer 10 are clamped together between the first heat dissipation plate 1 (such as the solid crystal block 121) and the second heat dissipation plate 2 (such as the positioning block 221).

[0082] In more detail, each of the spacers 10 in this embodiment is conductive, and the two ends of each of the spacers 10 are respectively connected to the chip 3 and the positioning block 221 of the second heat sink 2 through the two buffer blocks 51 of the buffer conductive layer 5, but the present application is not limited to this.

[0083] Technical effects of this application

[0084] In summary, the double-sided heat dissipation packaging structure and packaging structure disclosed in the present application can form a concave and convex surface with complementary appearance between two corresponding components and connect them with the buffer conductor having a specific thermal expansion coefficient so that the buffer conductor has the functions of stress buffering and conductive transmission, thereby effectively improving the bonding problems (such as: delamination defects, peeling defects or crack defects) between the two components caused by thermal expansion and contraction.

[0085] The contents disclosed above are only preferred feasible embodiments of the present application, and are not intended to limit the patent scope of the present application. Therefore, all equivalent technical changes made using the description and drawings of the present application are included in the patent scope of the present application.

Claims

1. A double-sided heat dissipation packaging structure, characterized in that: The double-sided heat dissipation packaging structure comprises: A first heat sink, comprising a first plate body and a first inner metal layer disposed inside the first plate body; wherein the first inner metal layer comprises at least one die-bonding block and at least one first support column; At least one chip is disposed in at least one of the die-bonding blocks; A second heat dissipation plate includes a second plate body and a second inner metal layer disposed inside the second plate body; wherein the second inner metal layer includes: at least one positioning block, which clamps at least one of the chips with at least one of the die-bonding blocks; and at least one second support column, whose end faces the end of at least one first support column at intervals along a thickness direction; wherein the end of at least one first support column and the end of at least one second support column have concave and convex surfaces with complementary shapes and a first gap is formed between them; and At least one first buffer conductor is located within the first gap and connects the end of at least one first support column and the end of at least one second support column to jointly form at least one first expansion joint; wherein, at least one first buffer conductor has a thermal expansion coefficient that is smaller than the thermal expansion coefficient of the first inner metal layer and also smaller than the thermal expansion coefficient of the second inner metal layer.

2. The double-sided heat dissipation packaging structure according to claim 1, characterized in that: Along a transverse direction perpendicular to the thickness direction, the concavo-convex surface of at least one of the first supporting columns partially overlaps the concavo-convex surface of at least one of the second supporting columns.

3. The double-sided heat dissipation packaging structure according to claim 1, characterized in that: The double-sided heat dissipation packaging structure further includes a packaging body formed on the first plate body and the second plate body, and the first inner metal layer, the second inner metal layer, at least one chip, and at least one first expansion joint are all buried in the packaging body.

4. The double-sided heat dissipation packaging structure according to claim 3, characterized in that: The first heat dissipation plate includes a first outer metal layer, which is arranged on the outer side of the first plate body; the second heat dissipation plate includes a second outer metal layer, which is arranged on the outer side of the second plate body; wherein the outer surface of the first outer metal layer and the outer surface of the second outer metal layer are both exposed outside the packaging body.

5. The double-sided heat dissipation packaging structure according to claim 1, characterized in that: The first heat sink and the second heat sink are each a direct copper-clad ceramic substrate, the first plate body and the second plate body are each a ceramic plate body, and the first inner metal layer is sintered and fixed to the first plate body, while the second inner metal layer is sintered and fixed to the second plate body.

6. The double-sided heat dissipation packaging structure according to claim 1, characterized in that: The first heat sink and the second heat sink are each an active metal brazed ceramic substrate, the first plate body and the second plate body are each a ceramic plate body, and the first inner metal layer is brazed fixed to the first plate body, and the second inner metal layer is brazed fixed to the second plate body.

7. The double-sided heat dissipation packaging structure according to claim 1, characterized in that: The number of at least one of the first expansion joints is plural, and the number of at least one of the chips is plural, and one first expansion joint is arranged between any two adjacent chips.

8. The double-sided heat dissipation packaging structure according to claim 1, characterized in that: The double-sided heat dissipation packaging structure further includes a buffer conductive layer connected between at least one of the chips and at least one of the positioning blocks; wherein, at least one of the chips has a chip thermal expansion coefficient, and the thermal expansion coefficient of the buffer conductive layer is smaller than the thermal expansion coefficient of the second inner metal layer and greater than the thermal expansion coefficient of the chip.

9. The double-sided heat dissipation packaging structure according to claim 8, characterized in that: The buffer conductive layer and the first plate are separated by a configuration distance in the thickness direction, and the distance between at least one of the first buffer conductors and the first plate is 95% to 105% of the configuration distance.

10. The double-sided heat dissipation packaging structure according to claim 1, characterized in that: At least one of the chips has a chip thermal expansion coefficient, and the thermal expansion coefficient of at least one of the first buffer conductors is not greater than 250% of the chip thermal expansion coefficient.

11. The double-sided heat dissipation packaging structure according to claim 1, characterized in that: The material of at least one of the first buffer conductors includes at least one of aluminum silicon carbide, aluminum silicon alloy, molybdenum, tungsten, copper-molybdenum alloy and copper-tungsten alloy.

12. The double-sided heat dissipation packaging structure according to claim 1, characterized in that: The first inner metal layer includes a connection block, and the double-sided heat dissipation packaging structure further includes: A metal member having a first section facing the connection block at intervals along the thickness direction; wherein the first section and the connection block have concave and convex surfaces with complementary shapes and a second gap is formed between them; and a second buffer conductor, which is located in the second gap and connects the first section and the connecting block to form a second expansion joint; wherein the second buffer conductor has a thermal expansion coefficient that is smaller than the thermal expansion coefficient of the first inner metal layer and also smaller than the thermal expansion coefficient of the metal member; Wherein, along a transverse direction perpendicular to the thickness direction, the concave-convex surface of the connecting block partially overlaps the concave-convex surface of the metal component.

13. A double-sided heat dissipation packaging structure, characterized in that: The double-sided heat dissipation packaging structure comprises: Two heat sinks are arranged spaced apart from each other along a thickness direction, and each of the two heat sinks is formed with a support column; wherein the ends of the two support columns are spaced apart from each other along the thickness direction and face each other, and the ends of the two support columns have concave and convex surfaces with complementary shapes, and a gap is formed between them; a chip disposed between the two heat sinks, and the chip has a chip thermal expansion coefficient; and A buffer conductor is located in the gap and connects the ends of the two support pillars to form an expansion joint; wherein the buffer conductor has a thermal expansion coefficient that is not greater than 250% of the thermal expansion coefficient of the chip.

14. The double-sided heat dissipation packaging structure according to claim 13, characterized in that: The double-sided heat dissipation packaging structure further includes a spacer, and the spacer is arranged on the chip so that the spacer and the chip are clamped between the two heat dissipation plates.

15. A packaging structure, characterized in that: The packaging structure comprises: A metal layer including a connection block; A metal member having a first section facing the connection block at intervals along a thickness direction; wherein the first section and the connection block have concave and convex surfaces with complementary shapes and a gap formed therebetween; and A buffer conductor is located in the gap and connects the first section and the connection block to form an expansion joint. The buffer conductor has a thermal expansion coefficient that is smaller than the thermal expansion coefficient of the metal layer and the thermal expansion coefficient of the metal part.

16. The packaging structure according to claim 15, characterized in that: The packaging structure further includes: a packaging body formed on the metal layer, and the expansion joint is buried in the packaging body.

17. The packaging structure according to claim 16, characterized in that: Along a transverse direction perpendicular to the thickness direction, the concave-convex surface of the connecting block partially overlaps the concave-convex surface of the metal member.

18. The packaging structure according to claim 16, characterized in that: The metal layer includes a solid crystal block separated from the connecting block, and the packaging structure further includes a chip, which is arranged in the solid crystal block and buried in the packaging body; wherein the chip has a chip thermal expansion coefficient, and the thermal expansion coefficient of the buffer conductor is not greater than 250% of the chip thermal expansion coefficient; wherein the metal part has a second section, which is connected to the chip and its inner side is buried in the packaging body.

19. The packaging structure according to claim 18, characterized in that: The packaging structure includes a buffer conductive layer connecting the chip and the second segment, and the chip is electrically coupled to the connection block through the buffer conductive layer, the metal member and the buffer conductor.

20. The packaging structure according to claim 19, characterized in that: The chip includes a first connection pad and a second connection pad spaced apart from each other, the buffer conductive layer is disposed on the first connection pad, the metal layer includes a bonding block spaced apart from the connection block and the die-bonding block, and the packaging structure has a metal wire connecting the bonding block and the second connection pad.

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