A pulse phase ranging device

Abstract

The present application discloses a pulse phase ranging device, which relates to the field of phase ranging. In the device, the transmitting module is used to: generate a pulse laser signal as the internal optical path signal and reflect it to the receiving module; generate another pulse laser signal and emit it to the target; generate a local oscillator signal and transmit it to the receiving module; the receiving module is used to: receive the internal optical path signal and the external optical path signal and convert them into electrical signals, then mix them with the local oscillator signal to obtain a mixed electrical signal, and then perform filtering and amplification processing; the control processing module is used to: collect the received signal from the receiving module, perform waveform accumulation, median filtering processing, and differential processing on the received signal in sequence to obtain the preliminary phase of the internal and external optical path wave peaks, optimize the preliminary phase of the internal and external optical path wave peaks by using the centroid method and calculate the phase difference between the internal and external optical paths, and further calculate the distance to the target. The present application can achieve highly reliable measurement in different environments.

Description

Technical Field

[0001] This application relates to the field of phase ranging, and particularly to a pulse phase ranging device. Background Art

[0002] Pulse phase ranging technology: By emitting a modulated light wave and receiving the signal reflected from the target, measure the phase difference between the transmitted signal and the received signal, and calculate the distance to the target using the phase difference. Pulse phase ranging technology is a high-precision ranging method that combines the characteristics of pulse ranging and phase ranging, and can achieve a measurement accuracy of millimeter level. Compared with traditional pulse ranging, it can achieve higher accuracy. However, in a complex environment, the measurement accuracy and performance stability are easily affected. Especially when the external environmental light signal is strong, the signal-to-noise ratio of the signal will deteriorate, affecting the calculation of the signal phase, resulting in unstable calculation and even incorrect data. Summary of the Invention

[0003] The purpose of this application is to provide a pulse phase ranging device that can achieve highly reliable measurement in different environments.

[0004] To achieve the above purpose, this application provides the following solutions:

[0005] This application provides a pulse phase ranging device, including a transmitting module, a receiving module, and a control and processing module;

[0006] The transmitting module is used for: generating a pulse laser signal as the internal optical path signal and reflecting it to the receiving module; generating another pulse laser signal and emitting it to the target; generating a local oscillator signal and transmitting it to the receiving module; wherein, the pulse laser signal reflected by the target serves as the external optical path signal to the receiving module;

[0007] The receiving module is used for: receiving the internal optical path signal and the external optical path signal and converting them into electrical signals, and then mixing them with the local oscillator signal to obtain a mixed electrical signal; performing filtering and amplification processing on the mixed electrical signal;

[0008] The control and processing module is used for: collecting signals from the receiving module to obtain a received signal; sequentially performing waveform accumulation, median filtering processing, and differential processing on the received signal to obtain the preliminary phase of the internal and external optical path wave peaks; optimizing the preliminary phase of the internal and external optical path wave peaks using the centroid method and calculating the phase difference between the internal and external optical paths; calculating the distance to the target based on the phase difference between the internal and external optical paths.

[0009] According to the specific embodiments provided by the present application, the present application has the following technical effects: The present application provides a pulse phase ranging device. The laser is emitted and the signal is transmitted by the transmitting module, and the signal is received by the receiving module. Then, the control processing module sequentially performs waveform accumulation, median filtering, and differential processing on the collected received signal to obtain the preliminary phase of the wave peaks of the internal and external optical paths. In this step, waveform accumulation and median filtering will reduce and smooth the background noise in the signal. Then, differential processing can further reduce the influence of the signal that has become smooth but still has large fluctuations on peak searching, providing more accurate data for subsequent distance calculation. The centroid method is used to optimize the preliminary phase of the wave peaks of the internal and external optical paths to determine the accurate phase and calculate the phase difference between the internal and external optical paths. Based on the phase difference between the internal and external optical paths, the distance to the target object is calculated. Thus, the present application realizes the ranging function. And based on the function settings in the control processing module, even in different environments or in a strong light interference environment, noise reduction can be achieved through waveform accumulation, median filtering, differentiation, and the centroid method, and then stable and reliable measurement can be realized to obtain accurate distance results. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for use in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0011] Figure 1 Schematic diagram of the pulse phase ranging device in an embodiment of the present application.

[0012] Figure 2 Schematic diagram of the pulse phase ranging device in another embodiment of the present application.

[0013] Figure 3 Schematic diagram of the structure of the ranging board in an embodiment of the present application.

[0014] Figure 4 Schematic diagram of the structure of the 5V power supply in an embodiment of the present application.

[0015] Figure 5 Schematic diagram of the structure of the 3.3V power supply in an embodiment of the present application.

[0016] Figure 6 Schematic diagram of the structure of the 2.5V power supply in an embodiment of the present application.

[0017] Figure 7 Schematic diagram of each port of the single-chip microcomputer chip in an embodiment of the present application.

[0018] Figure 8 Schematic diagram of the circuit structure of a phase-locked loop in an embodiment of the present application.

[0019] Figure 9 Schematic diagram of the circuit structure of a flip-flop in an embodiment of the present application.

[0020] Figure 10 Schematic diagram of the circuit structure of the receiving boost circuit for controlling an avalanche photodiode in an embodiment of the present application.

[0021] Figure 11 Schematic diagram of the circuit structure of the receiving drive assembly for driving an avalanche photodiode in an embodiment of the present application.

[0022] Figure 12 Schematic diagram of the circuit structure when a laser emits laser light in an embodiment of the present application.

[0023] Figure 13 Schematic diagram of the circuit structure for signal processing by the receiving high-voltage circuit and the transimpedance amplifier circuit in an embodiment of the present application. Detailed implementation manners

[0024] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present application without creative efforts shall fall within the protection scope of the present application.

[0025] To make the objectives, features, and advantages of the present application more obvious and understandable, the present application will be further described in detail below in conjunction with the accompanying drawings and specific implementation manners.

[0026] In an exemplary embodiment, a pulse phase ranging device is provided, including a transmitting module, a receiving module, and a control processing module. As Figure 1 shown, the receiving module includes a receiving lens, an avalanche photodiode, a receiving high-voltage circuit, and a transimpedance amplifier circuit arranged in sequence; the transmitting module includes a laser, a local oscillator drive circuit, a transmitting drive circuit, a beam splitter, a differential amplifier circuit, a phase-locked loop, and a transmitting lens.

[0027] The transmitting module is configured to: generate a pulse laser signal as an internal optical path signal and reflect it to the receiving module; generate another pulse laser signal and emit it to a target; generate a local oscillator signal and transmit it to the receiving module; wherein, the pulse laser signal reflected by the target serves as an external optical path signal to the receiving module.

[0028] In a specific application example, the first output terminal of the phase-locked loop is sequentially connected to the differential amplifier circuit, the transmission driving circuit, and the laser, so that a signal output by the phase-locked loop drives the laser to emit two pulsed laser signals. Among them, one pulsed laser signal is directly reflected by the beam splitter to the receiving module as the internal optical path signal; the other pulsed laser signal is emitted through the transmitting lens to the target object, and then reflected by the target object to the receiving module as the external optical path signal.

[0029] The second output terminal of the phase-locked loop is connected to the local oscillator driving circuit, so that another signal output by the phase-locked loop drives the local oscillator driving circuit to generate a local oscillator signal and transmits it to the receiving module.

[0030] In another specific application example, the pulsed phase ranging device further includes a trigger; the trigger is used for: receiving a first trigger signal issued by the control processing module, and performing trigger control on the first output terminal and the second output terminal of the phase-locked loop according to the first trigger signal; receiving a second trigger signal issued by the control processing module, and triggering the control processing module to perform signal acquisition from the receiving module at intervals of a preset time duration according to the second trigger signal.

[0031] Specifically, the phase-locked loop generates two signals and is connected to the trigger at the same time, generating a trigger signal with a frequency of 1KHz for triggering the control processing module to collect the received signal. The trigger triggers the control processing module to collect the received signal every 1ms. Since the received signal is periodic and continuous, the trigger can ensure that the initial phase of collecting the received signal is consistent, and the time for collecting one cycle of the received signal is accurate and stable.

[0032] The receiving module is used for: receiving the internal optical path signal and the external optical path signal and converting them into electrical signals, and then mixing them with the local oscillator signal to obtain a mixed electrical signal; performing filtering and amplification processing on the mixed electrical signal.

[0033] In a specific application example, the receiving lens is used for: collecting the external optical path signal to the avalanche photodiode; specifically, the pulsed laser signal returned from the target object and the pulsed laser signal reflected inside the optomechanics are transmitted to the avalanche photodiode together through the receiving lens.

[0034] The avalanche photodiode is used for: converting the received internal optical path signal and external optical path signal into electrical signals, and mixing them with the local oscillator signal to obtain a mixed electrical signal.

[0035] The receiving high-voltage circuit is used for: performing filtering processing on the mixed electrical signal, and an electrical signal with a frequency of 1KHz can be obtained.

[0036] The transimpedance amplifier circuit is used for: amplifying the mixed-frequency electrical signal after filtering processing.

[0037] The control processing module is used for: collecting signals from the receiving module to obtain a received signal; successively performing waveform accumulation, median filtering processing, and differential processing on the received signal to obtain a preliminary phase of the inner and outer optical path wave peaks; optimizing the preliminary phase of the inner and outer optical path wave peaks by using the centroid method, and calculating the phase difference between the inner and outer optical paths; calculating the distance to the target object based on the phase difference between the inner and outer optical paths.

[0038] In a specific application example, the control processing module is composed of a single-chip microcomputer, and the single-chip microcomputer is also used for:

[0039] (1) Controlling the local oscillator driving circuit through a DAC (Digital Audio Compress, digital-to-analog converter) to change the magnitude of the local oscillator signal.

[0040] (2) Generating a first PWM (Pulse width modulation) signal through a timer to control the transmitting driving circuit, and then changing the laser power of the pulsed laser signal.

[0041] (3) Controlling the phase-locked loop through IIC (Inter-Integrated Circuit, integrated circuit bus) to generate multiple high-frequency and low-frequency signals; that is, the phase-locked loop is controlled by the single-chip microcomputer to generate two signals with a frequency difference of 1 KHz.

[0042] (4) After receiving the trigger signal sent by the trigger, collecting signals from the receiving module through an ADC (Analog-to-digital converter). Specifically, after being triggered by the 1 KHz trigger signal of the trigger, the single-chip microcomputer collects the received signal after circuit amplification and filtering through the ADC.

[0043] (5) Generating a second PWM signal through a timer to change the amplification factor of the avalanche photodiode by regulating the driving voltage, so that the wave peaks of the inner and outer optical path signals received by it reach a suitable height without saturation or being too weak.

[0044] In another specific application example, within the control processing module, the step of calculating the distance to the target object based on the phase difference between the inner and outer optical paths includes:

[0045] (1) Using the following formula to calculate the preliminary distance L1 to the target object: ; where P1 and P2 are the phase differences between the inner and outer optical paths of two low-frequency pulsed laser signals, ld It is the length that can be measured in one period corresponding to the difference frequency of two low-frequency pulsed laser signals.

[0046] (2) Based on the preliminary distance to the target object, determine the frequency of the high-frequency pulsed laser signal, and then calculate the internal and external optical path phase difference P3 of the two high-frequency pulsed laser signals.

[0047] (3) Use the following formula to calculate the distance value L2 to the target object under high-frequency signals: ; where l3 is the length that can be measured in one period corresponding to the difference frequency of the two high-frequency pulsed laser signals.

[0048] (4) Use the following formula to calculate the final distance L to the target object: ; where N is rounded down.

[0049] In another specific application example, the pulsed phase ranging device further includes a power management module; the power management module is used to: generate voltages of different magnitudes (such as 3V, 5V, etc.) to supply power to the laser, the receiving high-voltage circuit and the transimpedance amplifier circuit in the receiving module.

[0050] In an exemplary embodiment, the pulsed phase ranging device of the present application can set the ranging board as Figure 2 shown; where GD32F103Rxxx is the model of the single-chip microcomputer chip used by the control processing module. LCD is a liquid crystal display for displaying the final distance between the target objects. HV is a high-voltage driver for driving an avalanche photodiode, that is, APD. PLL is a phase-locked loop, TIA is a transimpedance amplifier circuit, LD externally refers to the laser, and target refers to the target object. In addition, a buzzer is used to prompt the user that the task starts or ends. In actual applications, low-pass filtering processing can be performed first, and then amplification processing can be performed using TIA; it can also be adjusted according to needs.

[0051] In actual applications, the ranging board can be connected to the keypad through a connector; where different buttons are set on the keypad to achieve different functions, such as continuous measurement and single measurement. The structure of the ranging board is as Figure 3 shown.

[0052] Corresponding to the power management module in the above text, voltages of different magnitudes can be generated. When the voltage is 5V, as Figure 4 shown; when the voltage is 3.3V, as Figure 5 shown; when the voltage is 2.5V, as Figure 6 shown.

[0053] As Figure 7As shown in the figure, it is a schematic diagram of each port of the single-chip microcomputer chip adopted by the control and processing module in this application. In this chip, the PA1 port is an IO port to implement power supply control, and it is set high when powered on. The PA2 port and the PA3 port are Bluetooth connection serial ports. The PA4 port is for DAC laser power control. The PA5 port is for DAC intrinsic signal drive control. The PA6 port is for ADC intermediate frequency echo signal acquisition. The PA7 port is for ADC charging state detection. The PB0 port is a timer for local oscillator signal high voltage control. The PB1 port implements ADC battery power detection. The PB2 port implements Bluetooth chip selection. The PB10 port implements Bluetooth reset. The PA11 port implements interruption and trigger signal acquisition. The PA9 port is the debug serial port TX. The PA10 port is the debug serial port RX. The PA13 port and the PA14 port are program download ports. The PB5 port is an IO port to implement display reset. The PB6 port and the PB7 port are for I2C display communication. The PB8 port and the PB9 port are for I2C phase-locked loop communication.

[0054] As Figure 8 As shown in the figure, the circuit structure of the phase-locked loop is as follows: After the first end and the seventh end of chip U4 are connected, they are grounded via capacitor C20; the first end of chip U4 is connected to VCC via inductor L4; the first end of chip U4 is also connected to capacitor C18. Capacitor C18 is a decoupling capacitor, and there is a blank next to capacitor C18 where a capacitor has been removed; the second end of chip U4 is connected to the first end of chip Y1 and then grounded; the third end of chip U4 is connected to the third end of chip Y1 and then grounded; the fourth end of chip U4 is connected to the PLL_I2C_SCL contact point; the fifth end of chip U4 is connected to the PLL_I2C_SDA contact point; the sixth end of chip U4 is connected to the CLK_LD contact point; the tenth end of chip U4 is connected to the CLK_LO contact point; the eighth end of chip U4 is grounded.

[0055] Chip U4 is a phase-locked chip; chip Y1 is a passive crystal oscillator that provides a high-precision fixed-frequency clock for the phase-locked loop; the PLL_I2C_SCL contact point and the PLL_I2C_SDA contact point are communication interfaces between the phase-locked loop and the control and processing module MCU, used to control the frequency output of the phase-locked loop; the CLK_LD contact point and the CLK_LO contact point represent two signals with different frequencies generated by the phase-locked loop, which are respectively sent to the transmit drive circuit and the local oscillator drive circuit.

[0056] As Figure 9As shown in the figure, the circuit structure of the flip-flop is as follows: the first terminal of chip U5 is connected to the CLK_LO contact point through resistor R13; the second terminal of chip U5 is grounded; the third terminal of chip U5 is connected to the CLK_LD contact point through resistor R14; the CLK_REF contact point is connected to one end of resistor R37; the other end of resistor R37 is connected to VCC after being connected in series with resistor R12; the other end of resistor R37 is also connected to the fourth terminal of chip U5 and then grounded through capacitor C22; the fifth and sixth terminals of chip U5 are connected and then connected to VCC through resistor R11; the fifth and sixth terminals of chip U5 are connected and also grounded through capacitor C21; chip U5 is a flip-flop chip, and the CLK_REF contact point is the flip-flop mixing signal, serving as the starting reference for signal echo acquisition.

[0057] As Figure 10 shown in the figure, the receiving boost circuit for controlling the avalanche photodiode is a BOOST boost circuit, and its circuit structure is as follows: the APD_HV contact point is grounded through resistor R17, and the APD_HV contact point is also respectively connected to the first terminal of resistor R15 and the first terminal of capacitor C25. The second terminal (the other end) of resistor R15 is respectively connected to the negative electrode of diode D3 and the first terminal of capacitor C55; the second terminal (the other end) of capacitor C25 is respectively connected to the second terminal (the other end opposite to the first terminal) of capacitor C55 and one end of resistor R23; the anode of diode D3 is respectively connected to one end of inductor L7 and the drain of field effect transistor Q5. A resistor R20 is provided between the source and gate of field effect transistor Q5; the gate of field effect transistor Q5 is connected to the HV_ADJ contact point; the other end of inductor L7 is connected to VCC after being connected in series with inductor L6; capacitor C24 is an input filter capacitor, which is provided between inductor L6 and inductor L7 and is grounded.

[0058] As Figure 11As shown in the figure, it is the circuit structure of the receiving and driving component for driving an avalanche photodiode. Among them, the inductor L13 is a magnetic bead used to suppress high-frequency noise in the power supply. The capacitors C28 and C29 are bypass capacitors used for filtering; U6 is a low-dropout linear regulator (LDO) with adjustable voltage, used to drive the local oscillator signal, and different voltage values are required for signals of different frequencies. The resistors R25, R26, and R27 are used for voltage division, and the output voltage is adjusted through the DAC. The capacitors C31 and C32 are used as output filtering capacitors, and the resistor R24 is a magnetic bead to suppress the noise of the subsequent circuit. The LDO amplifies the high-frequency signal emitted by the PLL through the capacitors C50, C30, the inductor L19, the capacitor C34, the resistor R30, and the triode U7 to reach the threshold of APD photoelectric conversion. In the circuit from CLK_LO to the triode U7, multiple inductors and capacitors form an LC filter network to filter out high-frequency noise, achieve impedance matching, and at the same time, realize high-frequency pulse waveform modulation with U6 and the triode U7.

[0059] As Figure 12 shown in the figure, it is the circuit structure when the laser emits laser light. Among them, the inductor L16, the capacitor C52, and the resistor R49 perform differential modulation on the signal emitted by the PLL to generate pulses, and the signal edge steepness is improved through resonance characteristics to optimize the pulse quality. The inductor L15 filters out high-frequency noise, and FL1 suppresses common-mode noise to ensure signal integrity. The triode U15 modulates, shapes, and amplifies the signal. The circuit around U12 is connected to the laser feedback pin to control the laser power and the stability of the transmitted signal.

[0060] As Figure 13 shown in the figure, it is the circuit structure for signal processing of the receiving high-voltage circuit and the transimpedance amplifier circuit. This figure mainly shows the signal receiving circuit. The resistors R40 and C72 are used for input filtering to filter out high-frequency noise and improve the signal-to-noise ratio. The resistors R67, R66, and the capacitor C33 and the first stage of U13 form a transimpedance amplifier to ensure signal gain. The resistors R64 and C64 are used for frequency compensation to suppress parasitic oscillation and improve signal stability. The resistors R61 and R63 are bias resistors to provide a stable bias voltage for the operational amplifier. The resistors R48, R51, and the capacitors C59, C60 suppress the high-frequency noise of the amplified signal.

[0061] The technical features of the above embodiments can be combined arbitrarily. For the sake of concise description, not all possible combinations of the technical features in the above embodiments are described. However, as long as the combinations of these technical features do not conflict, they should all be considered as the scope described in this specification.

[0062] In this article, specific examples are used to elaborate on the principles and implementation manners of the present application. The descriptions of the above embodiments are only used to help understand the method of the present application and its core idea; at the same time, for those of ordinary skill in the art, according to the idea of the present application, there will be changes in the specific implementation manners and application scopes. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A pulse phase ranging device, characterized in that, The pulse phase ranging device includes a transmitting module, a receiving module and a control and processing module; The transmitting module is configured to: generate a path of pulsed laser signal as an internal optical path signal and reflect it to the receiving module; generate another path of pulsed laser signal and emit it to the target; generate a local oscillator signal and transmit it to the receiving module; wherein, the pulsed laser signal reflected by the target serves as an external optical path signal to the receiving module; The receiving module is configured to: receive the internal optical path signal and the external optical path signal and convert them into electrical signals, and then mix them with the local oscillator signal to obtain a mixed electrical signal; perform filtering and amplification processing on the mixed electrical signal; The control and processing module is configured to: collect signals from the receiving module to obtain received signals; perform waveform accumulation, median filtering processing, and differentiation processing on the received signals in sequence to obtain the preliminary phases of the internal and external optical path wave peaks; optimize the preliminary phases of the internal and external optical path wave peaks by using the centroid method and calculate the phase difference between the internal and external optical paths; calculate the distance to the target based on the phase difference between the internal and external optical paths; The control and processing module is composed of a single-chip microcomputer; the transmitting module includes a phase-locked loop; the pulse phase ranging device further includes a trigger; the trigger is configured to: receive the first trigger signal sent by the control and processing module and trigger and control the first output terminal and the second output terminal of the phase-locked loop according to the first trigger signal; receive the second trigger signal sent by the control and processing module and trigger the control and processing module to collect signals from the receiving module at intervals of a preset time duration according to the second trigger signal; Inside the control and processing module, the step of calculating the distance to the target based on the phase difference between the internal and external optical paths includes: The preliminary distance L1 to the target object is calculated using the following formula: where P1 and P2 are the phase differences between the internal and external optical paths of two low-frequency pulsed laser signals, and l d is the length measurable in one period corresponding to the difference frequency of two low-frequency pulsed laser signals; Based on the preliminary distance to the target, determine the frequency of the high-frequency pulsed laser signal, and then calculate the phase difference P3 between the internal and external optical paths of the two high-frequency pulsed laser signals; Use the following formula to calculate the distance value L2 between the high-frequency signal and the target object: ; where l3 is the length that can be measured in one period corresponding to the difference frequency of two high-frequency pulsed laser signals; The final distance L to the target object is calculated using the following formula: ; where N is rounded down.

2. The pulse phase ranging device according to claim 1, wherein The receiving module includes a receiving lens, an avalanche photodiode, a receiving high-voltage circuit and a transimpedance amplifier circuit arranged in sequence; The receiving lens is configured to: collect the external optical path signal to the avalanche photodiode; The avalanche photodiode is configured to: convert the received internal optical path signal and external optical path signal into electrical signals and mix them with the local oscillator signal to obtain a mixed electrical signal; The receiving high-voltage circuit is configured to: perform filtering processing on the mixed electrical signal; The transimpedance amplifier circuit is configured to: perform amplification processing on the mixed electrical signal after filtering processing.

3. The pulse phase ranging device according to claim 1, characterized in that The transmitting module includes a laser, a local oscillator drive circuit, a transmitting drive circuit, a beam splitter, a differential amplifier circuit and a transmitting lens; The first output terminal of the phase-locked loop is sequentially connected to the differential amplifier circuit, the transmitting drive circuit and the laser, so that a path of signal output by the phase-locked loop drives the laser to emit two paths of pulsed laser signals; One of the pulsed laser signals is directly reflected by the beam splitter to the receiving module as the internal optical path signal; the other pulsed laser signal is emitted by the emitting lens to the target object and then reflected by the target object to the receiving module as the external optical path signal. The second output terminal of the phase-locked loop is connected to the local oscillator driving circuit, so that another signal output by the phase-locked loop drives the local oscillator driving circuit to generate a local oscillator signal and transmits it to the receiving module.

4. The pulse phase ranging device according to claim 3, wherein The control and processing module is further configured to: Control the local oscillator driving circuit through a DAC to change the magnitude of the local oscillator signal; Generate a first PWM signal to control the emission driving circuit, thereby changing the laser power of the pulsed laser signal; Control the phase-locked loop through IIC; After receiving the trigger signal sent by the trigger, perform signal acquisition from the receiving module through an ADC.

5. The pulse phase ranging device according to claim 3, wherein, The pulsed phase ranging device further includes a power management module; The power management module is configured to: generate voltages of different magnitudes to supply power to the laser, the receiving high-voltage circuit and the transimpedance amplifier circuit in the receiving module.

6. The pulse phase ranging device according to claim 3, characterized in that, The circuit structure of the phase-locked loop is as follows: The first terminal and the seventh terminal of chip U4 are connected and then grounded via capacitor C20; the first terminal of chip U4 is connected to VCC via inductor L4; the first terminal of chip U4 is also connected to capacitor C18, and capacitor C18 is a decoupling capacitor; The second terminal of chip U4 is connected to the first terminal of chip Y1 and then grounded; The third terminal of chip U4 is connected to the third terminal of chip Y1 and then grounded; The fourth terminal of chip U4 is connected to the PLL_I2C_SCL contact point; the fifth terminal of chip U4 is connected to the PLL_I2C_SDA contact point; the sixth terminal of chip U4 is connected to the CLK_LD contact point; the tenth terminal of chip U4 is connected to the CLK_LO contact point; The eighth terminal of chip U4 is grounded; Chip U4 is a phase-locked chip; chip Y1 is a passive crystal oscillator; the PLL_I2C_SCL contact point and the PLL_I2C_SDA contact point are communication interfaces between the phase-locked loop and the control and processing module; the CLK_LD contact point and the CLK_LO contact point represent two signals with different frequencies and are respectively sent to the emission driving circuit and the local oscillator driving circuit.

7. The pulse phase ranging device according to claim 3, wherein The circuit structure of the trigger is as follows: The first terminal of chip U5 is connected to the CLK_LO contact point via resistor R13; the second terminal of chip U5 is grounded; the third terminal of chip U5 is connected to the CLK_LD contact point via resistor R14; The CLK_REF contact point is connected to one end of resistor R37; the other end of resistor R37 is connected to VCC in series with resistor R12; the other end of resistor R37 is also connected to the fourth terminal of chip U5 and then grounded via capacitor C22; The fifth terminal and the sixth terminal of chip U5 are connected and then connected to VCC via resistor R11; the fifth terminal and the sixth terminal of chip U5 are connected and then grounded via capacitor C21; The chip U5 is a flip-flop chip, and the CLK_REF contact is a flip-flop mixing signal.

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