Method, device and equipment for determining voltage deviation value of control voltage threshold

Abstract

The invention provides a method, a device and equipment for determining a voltage deviation value of a control voltage threshold. The method comprises the following steps of: determining a control voltage threshold corresponding to each storage unit in a page according to a chip type of a nonvolatile memory; setting each control voltage threshold by using the initial voltage deviation value, and determining an initial reference value corresponding to the page; determining a target control voltage threshold from the control voltage thresholds according to a polling mode, setting the target control voltage threshold by using a preset voltage deviation value, setting other control voltage thresholds by using the initial voltage deviation value, and determining an adjustment reference value corresponding to the page; if the adjustment reference value is smaller than the initial reference value, determining that the target control voltage threshold is a preset voltage deviation value; otherwise, setting the target control voltage threshold as a preset voltage deviation value determined in the previous iterative search optimization operation; and then returning to execute the iterative search optimization operation. According to the method, the voltage deviation value of the control voltage threshold can be efficiently determined.

Description

Technical Field

[0001] The present application relates to the field of non-volatile storage technology, and in particular to a method, device and equipment for determining a voltage offset value of a control voltage threshold. Background Art

[0002] In non-volatile storage technology, a page (Page Type) of a non-volatile memory such as NAND flash memory generally includes multiple storage units (cells), each of which can store a different number of electrons to form a different voltage threshold (Vth); a flash memory controller determines the storage cell state of the storage cell by detecting the voltage threshold of the storage cell and comparing the voltage threshold with a voltage offset value of a control voltage threshold corresponding to the storage cell.

[0003] In order to improve reading accuracy and reduce errors, the control voltage threshold needs to be optimized: by adjusting the voltage offset value and evaluating the impact of the voltage offset value on the number of errors or characteristic values, the optimal voltage offset value combination corresponding to each storage unit of the page is found. In the current technical solution, the voltage offset value corresponding to the voltage control threshold is continuously adjusted for each voltage control threshold in turn until the voltage offset value can minimize the number of page errors or characteristic values; then the above operation is repeated for another voltage control threshold; after performing the above operation on each voltage control threshold of the page, the number of page errors or characteristic values ​​is minimized, ensuring the highest accuracy of data reading on the page. However, according to the current technical solution, a large number of search optimization operations need to be performed, resulting in low efficiency in determining the voltage offset value of the control voltage threshold of the page.

[0004] Therefore, how to efficiently determine the voltage offset value of the control voltage threshold to ensure the accuracy of data reading from the page is a technical problem that those skilled in the art need to solve at present. Summary of the invention

[0005] The purpose of the present application is to provide a method, apparatus, terminal device, computer-readable storage medium and computer program product for determining a voltage offset value of a control voltage threshold, aiming to more efficiently determine the optimal voltage offset value combination of the control voltage threshold corresponding to each storage unit in a page, so as to ensure the highest accuracy in reading data from the page.

[0006] In a first aspect, the present application provides a method for determining a voltage offset value of a control voltage threshold. The method comprises:

[0007] Determine the control voltage threshold corresponding to each storage unit in the page according to the chip type of the non-volatile memory;

[0008] Using the initial voltage offset value to set each of the control voltage thresholds, and determining an initial reference value corresponding to the page;

[0009] Determine a target control voltage threshold from each of the control voltage thresholds in a polling manner, set the target control voltage threshold using a preset voltage offset value, set other control voltage thresholds using the initial voltage offset value, and determine an adjustment reference value corresponding to the page; the other control voltage thresholds are control voltage thresholds other than the target control voltage threshold among the control voltage thresholds;

[0010] If the adjustment reference value is less than the initial reference value, determining the target control voltage threshold to be the preset voltage offset value, and returning to the step of determining the target control voltage threshold from each of the control voltage thresholds in a polling manner, setting the target control voltage threshold by using the preset voltage offset value, setting other control voltage thresholds by using the initial voltage offset value, and determining the adjustment reference value corresponding to the page;

[0011] If the adjustment reference value is greater than the initial reference value, the target control voltage threshold is set to the preset voltage offset value determined in the previous iterative search optimization operation, and the step of determining the target control voltage threshold from each of the control voltage thresholds in a polling manner is returned, the target control voltage threshold is set using the preset voltage offset value, other control voltage thresholds are set using the initial voltage offset value, and the step of determining the adjustment reference value corresponding to the page is determined.

[0012] In one embodiment, determining a target control voltage threshold from each of the control voltage thresholds in a polling manner, setting the target control voltage threshold using a preset voltage offset value, setting other control voltage thresholds using the initial voltage offset value, and determining an adjustment reference value corresponding to the page includes:

[0013] Determine a target control voltage threshold from each of the control voltage thresholds in a polling manner;

[0014] Using a preset voltage offset value to set the target control voltage threshold, and using the initial voltage offset value to set other control voltage thresholds;

[0015] Performing a data reading operation on a corresponding storage unit based on the preset voltage offset value and the initial voltage offset value to obtain an actual voltage threshold value of each storage unit;

[0016] Determining a storage unit state according to a magnitude relationship between the actual voltage threshold and the preset voltage offset value;

[0017] An adjustment reference value corresponding to the page is determined according to the state of each of the storage cells.

[0018] In one embodiment, after using the initial voltage offset value to set each of the control voltage thresholds and determining the initial reference value corresponding to the page, the method further includes:

[0019] Determining whether the initial reference value is greater than a preset decoding capability value;

[0020] If the initial reference value is greater than the preset decoding capability value, the step of determining the target control voltage threshold from each of the control voltage thresholds in a polling manner, setting the target control voltage threshold using the preset voltage offset value, setting other control voltage thresholds using the initial voltage offset value, and determining the adjustment reference value corresponding to the page is entered.

[0021] In one of the embodiments, the page size of the page is a fixed data length, a codeword length of an error correction code, or a physical page length.

[0022] In one embodiment, if the adjustment reference value is greater than the initial reference value, setting the target control voltage threshold to the preset voltage offset value determined in the previous iterative search optimization operation includes:

[0023] If the adjustment reference value is greater than the initial reference value, the target control voltage threshold is set to the preset voltage offset value determined in the previous iterative search optimization operation, and when the next iterative search optimization operation is performed on the target control voltage threshold, the corresponding preset voltage offset value is reversely set based on the current preset voltage offset value.

[0024] In one embodiment, after determining a target control voltage threshold from each of the control voltage thresholds in a polling manner, setting the target control voltage threshold using a preset voltage offset value, setting other control voltage thresholds using the initial voltage offset value, and determining an adjustment reference value corresponding to the page, the method further includes:

[0025] Determine whether the preset end condition is currently reached;

[0026] If the preset end condition is reached, the iterative search optimization operation ends.

[0027] In one embodiment, the process of determining the preset voltage offset value includes:

[0028] The preset voltage offset value is determined based on a linear approximation algorithm or an error number gradient descent algorithm.

[0029] In a second aspect, the present application also provides a device for determining a voltage offset value of a control voltage threshold. The device comprises:

[0030] A first determination module, used to determine the control voltage threshold corresponding to each storage unit in the page according to the chip type of the non-volatile memory;

[0031] A second determination module, configured to set each of the control voltage thresholds using an initial voltage offset value, and determine an initial reference value corresponding to the page;

[0032] an iterative search module, configured to determine a target control voltage threshold from each of the control voltage thresholds in a polling manner, set the target control voltage threshold using a preset voltage offset value, set other control voltage thresholds using the initial voltage offset value, and determine an adjustment reference value corresponding to the page; the other control voltage thresholds are control voltage thresholds other than the target control voltage threshold among the control voltage thresholds;

[0033] a first execution module, configured to determine the target control voltage threshold as the preset voltage offset value and call the iterative search module if the adjustment reference value is less than the initial reference value;

[0034] The second execution module is used for setting the target control voltage threshold to the preset voltage offset value determined in the previous iterative search optimization operation if the adjustment reference value is greater than the initial reference value, and calling the iterative search module.

[0035] In a third aspect, the present application further provides a terminal device, wherein the terminal device comprises a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the above method when executing the computer program.

[0036] In a fourth aspect, the present application further provides a computer-readable storage medium. The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the above method are implemented.

[0037] In a fifth aspect, the present application further provides a computer program product. The computer program product includes a computer program, and when the computer program is executed by a processor, the steps of the above method are implemented.

[0038] The present application provides a method for determining a voltage offset value of a control voltage threshold. After determining the control voltage thresholds corresponding to each storage unit in a page according to the chip type of a non-volatile memory, each control voltage threshold is set using an initial voltage offset value, and an initial reference value corresponding to the page is determined; a target control voltage threshold is determined from each control voltage threshold, the target control voltage threshold is set using a preset voltage offset value, other control voltage thresholds are set using the initial voltage offset value, and a first error reference value corresponding to the page is determined; if the adjustment reference value is less than the initial reference value, the target control voltage threshold is determined to be the preset voltage offset value; if the adjustment reference value is greater than the initial reference value, the target control voltage threshold is set to the preset voltage offset value determined in the previous iterative search optimization operation; then the step of returning to determine the target control voltage threshold from each control voltage threshold, setting the target control voltage threshold using the preset voltage offset value, setting other control voltage thresholds using the initial voltage offset value, and determining the adjustment reference value corresponding to the page is returned. It can be seen that in the present method, each voltage control threshold is iteratively polled and optimized. After the target control voltage threshold is iteratively searched and optimized, the adjustment result corresponding to the iterative search optimization operation is determined according to the corresponding reference value, and the adjustment direction of the subsequent iterative search optimization operation is determined, so that each control voltage threshold is positively optimized and adjusted. Therefore, the number of iterative search optimization operations can be reduced, and the optimal voltage offset value combination of the control voltage thresholds corresponding to each storage unit in the page can be determined more efficiently, thereby ensuring the highest accuracy in data reading of the page.

[0039] It can be understood that the voltage offset value determination device, terminal device, computer-readable storage medium and computer program product for controlling the voltage threshold provided in the embodiments of the present application have the same beneficial effects as the above-mentioned method for determining the voltage offset value of the control voltage threshold, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0041] Figure 1 A flow chart of a method for determining a voltage offset value of a control voltage threshold provided in an embodiment of the present application;

[0042] Figure 2 A schematic diagram of a process of determining a voltage offset value of a control voltage threshold provided in an embodiment of the present application;

[0043] Figure 3 A schematic diagram of the structure of a device for determining a voltage offset value of a control voltage threshold provided in an embodiment of the present application;

[0044] Figure 4 A schematic diagram of the structure of a terminal device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0045] In the following description, specific details such as specific system structures, technologies, etc. are provided for the purpose of illustration rather than limitation, so as to provide a thorough understanding of the embodiments of the present application. However, it should be clear to those skilled in the art that the present application may also be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted to prevent unnecessary details from obstructing the description of the present application.

[0046] It should be understood that when used in the present specification and the appended claims, the term "comprising" indicates the presence of described features, wholes, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or combinations thereof.

[0047] It should also be understood that the term “and / or” used in the specification and appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0048] As used in the specification and appended claims of this application, the term "if" can be interpreted as "when" or "uponce" or "in response to determining" or "in response to detecting", depending on the context. Similarly, the phrase "if it is determined" or "if [described condition or event] is detected" can be interpreted as meaning "uponce it is determined" or "in response to determining" or "uponce [described condition or event] is detected" or "in response to detecting [described condition or event]", depending on the context.

[0049] In addition, in the description of the present application specification and the appended claims, the terms "first", "second", "third", etc. are only used to distinguish the descriptions and cannot be understood as indicating or implying relative importance.

[0050] References to "one embodiment" or "some embodiments" etc. described in the specification of this application mean that one or more embodiments of the present application include specific features, structures or characteristics described in conjunction with the embodiment. Therefore, the statements "in one embodiment", "in some embodiments", "in some other embodiments", "in some other embodiments", etc. that appear in different places in this specification do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways. The terms "including", "comprising", "having" and their variations all mean "including but not limited to", unless otherwise specifically emphasized in other ways. "Multiple" means "two or more".

[0051] A method for determining a voltage offset value of a control voltage threshold provided in an embodiment of the present application can be executed by a processor of a terminal device when running a corresponding computer program.

[0052] Figure 1 This is a flow chart of a method for determining a voltage offset value of a control voltage threshold provided in an embodiment of the present application. For ease of explanation, only the part related to the present embodiment is shown. The method provided in the present embodiment includes the following steps:

[0053] S100: Determine control voltage thresholds corresponding to respective storage cells in a page according to a chip type of the non-volatile memory.

[0054] Among them, non-volatile memory (NVM) refers to a memory that can keep data without losing it even when the power is off. Non-volatile memory includes NAND flash memory, NOR flash memory, etc.

[0055] It should be noted that the chip types of non-volatile memory include SLC (Single-Level Cell), MLC (Multi-Level Cell) and TLC (Triple-Level Cell), etc. Different chip types correspond to different numbers of control voltage thresholds. Among them, the control voltage threshold refers to the reference voltage level in the read operation, which is used to distinguish different data states in the storage cell. For example, in MLC NAND flash memory, there are three control voltage thresholds (VA, VB, VC). The page (Page Type) of non-volatile memory generally includes multiple storage cells (cell), each storage cell can store a different number of electrons to form a different voltage threshold (Vth); the flash memory controller determines the storage cell state of the storage cell by detecting the voltage threshold of the storage cell and comparing the voltage threshold with the voltage offset value of the control voltage threshold corresponding to the storage cell.

[0056] Specifically, each memory cell of SLC has only one control voltage threshold. Based on the single control voltage threshold, two memory cell states can be distinguished: 0 and 1; each memory cell of MLC has three control voltage thresholds. By comparing the voltage threshold of the memory cell with the three control voltage thresholds, four memory cell states can be distinguished: 00, 01, 10 and 11; each memory cell of TLC has seven control voltage thresholds. By comparing the voltage threshold of the memory cell with the seven control voltage thresholds, eight memory cell states can be distinguished: 000, 001, 010, 011, 100, 101, 110 and 111.

[0057] S200: setting each control voltage threshold using the initial voltage offset value, and determining an initial reference value corresponding to the page.

[0058] The initial voltage offset value refers to the starting point or reference value set for the control voltage threshold, corresponding to the initial reference value of the page. The initial reference value refers to a parameter used to measure the accuracy of data reading from the page. In this embodiment, the initial reference value includes an error number or a characteristic value; the error number refers to the total number of errors when reading the data information in the page according to the initial voltage offset value, that is, the number of mismatches between the read data and the expected data; the characteristic value refers to a value calculated by an error detection and correction algorithm (ECC) to indicate whether there is an error in the read data and the nature of the error, that is, a parameter used to determine whether the data has been tampered with or damaged during transmission or storage.

[0059] Specifically, after the control voltage threshold is set using the initial voltage offset value, a read operation is performed on the storage cells in the page based on the initial voltage offset value; based on the data reading result, the number of errors or characteristic values ​​of the page are calculated to obtain an initial reference value.

[0060] S300: Determine a target control voltage threshold from each control voltage threshold in a polling manner, set the target control voltage threshold using a preset voltage offset value, set other control voltage thresholds using an initial voltage offset value, and determine an adjustment reference value corresponding to the page; other control voltage thresholds are control voltage thresholds other than the target control voltage threshold among the control voltage thresholds.

[0061] The target control voltage threshold refers to any one of the control voltage thresholds. In this embodiment, the target control voltage threshold is determined from the control voltage thresholds in a polling manner.

[0062] After determining the target control voltage threshold, the target control voltage threshold is set using a preset voltage offset value, and other control voltage thresholds are set using an initial voltage offset value; a reading operation is performed on the storage cells in the page based on the preset voltage offset value and the initial voltage offset value; based on the data reading result, the number of errors or characteristic values ​​of the page is calculated to obtain an adjustment reference value.

[0063] In other embodiments, if other control voltage thresholds have been previously subjected to an iterative search optimization operation, the control voltage threshold may be set using a preset voltage offset value determined by the previous iterative search optimization operation of the control voltage threshold.

[0064] S400: If the adjustment reference value is less than the initial reference value, the target control voltage threshold is determined to be the preset voltage offset value, and the process returns to the step of determining the target control voltage threshold from each control voltage threshold in a polling manner, setting the target control voltage threshold using the preset voltage offset value, setting other control voltage thresholds using the initial voltage offset value, and determining the adjustment reference value corresponding to the page.

[0065] After determining the adjustment reference value, compare the adjustment reference value with the initial reference value; if the adjustment reference value is less than the initial reference value, it means that the search direction of the current iterative search optimization operation is correct, so the target control voltage threshold is determined to be the preset voltage offset value. Then, return to S300: determine the target control voltage threshold from each control voltage threshold in a polling manner, set the target control voltage threshold using the preset voltage offset value, set other control voltage thresholds using the initial voltage offset value, and determine the adjustment reference value corresponding to the page, that is, continue to poll to determine the target control voltage threshold, and perform iterative search optimization operations.

[0066] In practical applications, if the adjustment reference value is smaller than the initial reference value, after determining that the target control voltage threshold is the preset voltage offset value, the adjustment reference value is further used to update the initial reference value, and then the calculated adjustment reference value is continued to be compared with the updated initial reference value.

[0067] S500: If the adjustment reference value is greater than the initial reference value, the target control voltage threshold is set to the preset voltage offset value determined in the previous iterative search optimization operation, and the process returns to the step of determining the target control voltage threshold from each control voltage threshold in a polling manner, setting the target control voltage threshold using the preset voltage offset value, setting other control voltage thresholds using the initial voltage offset value, and determining the adjustment reference value corresponding to the page.

[0068] In this step, if it is determined that the adjustment reference value is greater than the initial reference value, it means that the search direction of the current iterative search optimization operation is wrong. Therefore, the target control voltage threshold is set to the preset voltage offset value determined in the previous iterative search optimization operation, that is, the current voltage offset value adjustment is abandoned and restored to the voltage offset value obtained after the previous adjustment that minimizes the erroneous reference value; then return to S300: determine the target control voltage threshold from each control voltage threshold in a polling manner, set the target control voltage threshold using the preset voltage offset value, set other control voltage thresholds using the initial voltage offset value, and determine the step of adjusting the reference value corresponding to the page, that is, continue to poll to determine the target control voltage threshold, and perform iterative search optimization operations.

[0069] The embodiment of the present application provides a method for determining a voltage offset value of a control voltage threshold. After determining the control voltage thresholds corresponding to each storage unit in a page according to the chip type of a non-volatile memory, each control voltage threshold is set using an initial voltage offset value, and an initial reference value corresponding to the page is determined; a target control voltage threshold is determined from each control voltage threshold, the target control voltage threshold is set using a preset voltage offset value, other control voltage thresholds are set using the initial voltage offset value, and a first error reference value corresponding to the page is determined; if the adjustment reference value is less than the initial reference value, the target control voltage threshold is determined to be the preset voltage offset value; if the adjustment reference value is greater than the initial reference value, the target control voltage threshold is set to the preset voltage offset value determined in the previous iterative search optimization operation; then the step of returning to determine the target control voltage threshold from each control voltage threshold, setting the target control voltage threshold using the preset voltage offset value, setting other control voltage thresholds using the initial voltage offset value, and determining the adjustment reference value corresponding to the page is returned. It can be seen that in the present method, each voltage control threshold is iteratively polled and optimized. After the target control voltage threshold is iteratively searched and optimized, the adjustment result corresponding to the iterative search optimization operation is determined according to the corresponding reference value, and the adjustment direction of the subsequent iterative search optimization operation is determined, so that each control voltage threshold is positively optimized and adjusted. Therefore, the number of iterative search optimization operations can be reduced, and the optimal voltage offset value combination of the control voltage thresholds corresponding to each storage unit in the page can be determined more efficiently, thereby ensuring the highest accuracy in data reading of the page.

[0070] On the basis of the above-mentioned embodiment, this embodiment further illustrates and optimizes the technical solution. Specifically, in this embodiment, a target control voltage threshold is determined from each control voltage threshold in a polling manner, the target control voltage threshold is set using a preset voltage offset value, other control voltage thresholds are set using an initial voltage offset value, and an adjustment reference value corresponding to the page is determined, including:

[0071] determining a target control voltage threshold from each control voltage threshold in a polling manner;

[0072] Using a preset voltage offset value to set a target control voltage threshold, and using an initial voltage offset value to set other control voltage thresholds;

[0073] Performing a data reading operation on the corresponding storage unit based on the preset voltage offset value and the initial voltage offset value to obtain an actual voltage threshold value of each storage unit;

[0074] Determine the state of the storage unit according to the magnitude relationship between the actual voltage threshold and the preset voltage offset value;

[0075] An adjustment reference value corresponding to the page is determined according to the state of each memory cell.

[0076] In this embodiment, a target control voltage threshold is determined from each control voltage threshold in a polling manner; after the target control voltage threshold is determined, the target control voltage threshold is set using a preset voltage offset value, and other control voltage thresholds are set using an initial voltage offset value. In other embodiments, if other control voltage thresholds have been previously subjected to an iterative search optimization operation, the control voltage threshold may be set using a preset voltage offset value determined in the previous iterative search optimization operation of the control voltage threshold.

[0077] Based on the preset voltage offset value and the initial voltage offset value, a data reading operation is performed on the corresponding storage cells in the page to obtain the actual voltage threshold of each storage cell; the storage cell state is determined according to the size relationship between the actual voltage threshold and the preset voltage offset value; and the adjustment reference value corresponding to the page is determined according to the state of each storage cell.

[0078] For example, assume that the control voltage thresholds corresponding to MLC are VA, VB, and VC; first select VA as the target control voltage threshold, and set the preset voltage offset value to 0.5V, that is, adjust VA to 0.5V; use the initial voltage offset value to set VB and VC, assuming that VB and VC are set to 0.7V and 1.0V respectively; read the page data based on the preset voltage offset value and the initial voltage offset value to obtain the actual voltage threshold of the storage cell; compare the relationship between the actual voltage threshold and VA, VB, and VC to determine the state of each storage cell (00, 01, 10, 11). Specifically, by comparing the voltage threshold of the storage cell with VB, determine whether the Lower Page is 0 or 1; by comparing the voltage threshold of the storage cell with VA and VC, determine whether the Upper Page is 0 or 1; according to the states of the UpperPage and the Lower Page, combine the two bits of data stored in the storage cell to obtain the state of the storage cell; calculate the number of errors or characteristic values ​​according to the state of the storage cell, and use the calculated number of errors or characteristic values ​​as the adjustment reference value.

[0079] According to the method of this embodiment, the adjustment reference value can be determined efficiently and accurately.

[0080] Based on the above embodiment, this embodiment further illustrates and optimizes the technical solution. Specifically, in this embodiment, after using the initial voltage offset value to set each control voltage threshold and determining the initial reference value corresponding to the page, the method further includes:

[0081] determining whether the initial reference value is greater than a preset decoding capability value;

[0082] If the initial reference value is greater than the preset decoding capability value, the step of determining the target control voltage threshold from each control voltage threshold in a polling manner, setting the target control voltage threshold using the preset voltage offset value, setting other control voltage thresholds using the initial voltage offset value, and determining the adjustment reference value corresponding to the page is entered.

[0083] Among them, the preset decoding capability value can be the ECC first decoding capability value (Low Power Algorithm) or the ECC second decoding capability value (High Performance Algorithm). Among them, the ECC first decoding capability value is the decoding capability value corresponding to the ECC algorithm performed under low power consumption; the design goal of this algorithm is to reduce the consumption of computing resources while maintaining security, including reducing computational complexity, using less memory and storage space, and optimizing the algorithm to reduce energy consumption. The ECC second decoding capability value refers to the decoding capability value corresponding to the ECC algorithm implemented under high performance requirements; the goal of this algorithm is to improve the computing speed and processing power on the basis of ensuring security. This algorithm may use more complex mathematical operations and more advanced hardware support to achieve faster execution time and higher throughput. In this embodiment, the preset decoding capability value is set using the ECC first decoding capability value or the ECC second decoding capability value according to actual needs.

[0084] In this embodiment, after determining the initial reference value, it is further determined whether the initial reference value is greater than the preset decoding capability value; if the initial reference value is less than the preset decoding capability value, it means that the number of errors or characteristic values ​​of the initial data reading is low, and the data reading accuracy is relatively high, so there is no need to adjust the voltage offset value of the control voltage threshold; if the initial reference value is greater than the preset decoding capability value, it means that the number of errors or characteristic values ​​of the initial data reading is high, and the data reading accuracy is relatively low, so it is necessary to adjust the voltage offset value of the control voltage threshold, and enter S300: determine the target control voltage threshold from each control voltage threshold in a polling manner, set the target control voltage threshold using the preset voltage offset value, set other control voltage thresholds using the initial voltage offset value, and determine the step of adjusting the reference value corresponding to the page.

[0085] According to the method of this embodiment, the step of setting the voltage offset value of the control voltage threshold is performed only when it is determined that the initial reference value is greater than the preset decoding capability value, that is, the number of errors or characteristic values ​​of the initial data reading is high, thereby further saving system resources.

[0086] Based on the above embodiments, this embodiment further illustrates and optimizes the technical solution. Specifically, in this embodiment, the page size of the page is a fixed data length, a codeword length of an error correction code, or a physical page length.

[0087] The page size refers to the amount of data stored on a single physical page. It is understandable that the page size will affect storage efficiency and performance. In this embodiment, the page size can be set according to the fixed data length, the codeword length of the error correction code, or the physical page length.

[0088] The fixed data length refers to a preset fixed length; this embodiment does not limit the specific value of the fixed data length, such as 512 bytes or 4KB. When the page size is a fixed data length, it means that each page can write data of a fixed data length at most.

[0089] The codeword length of the error correction code (ECC) refers to the data unit used to store check information in the ECC algorithm; in this embodiment, the page size can be set to the length of one or more codewords.

[0090] Among them, the page length refers to the actual size of a physical page in the flash memory chip, that is, the smallest addressable storage unit in the flash memory chip, and is the basic unit for storing data.

[0091] In this embodiment, the page size can be set according to the fixed data length, the codeword length of the error correction code or the physical page length. The page size can be flexibly set according to actual needs, thereby improving the flexibility and convenience of determining the voltage offset value of the control voltage threshold.

[0092] Based on the above embodiment, this embodiment further illustrates and optimizes the technical solution. Specifically, in this embodiment, if the adjustment reference value is greater than the initial reference value, the target control voltage threshold is set to the preset voltage offset value determined in the previous iterative search optimization operation, including:

[0093] If the adjustment reference value is greater than the initial reference value, the target control voltage threshold is set to the preset voltage offset value determined in the previous iterative search optimization operation, and when the next iterative search optimization operation is performed on the target control voltage threshold, the corresponding preset voltage offset value is reversely set based on the current preset voltage offset value.

[0094] In this embodiment, when it is determined that the adjustment reference value is greater than the initial reference value, indicating that the search direction of the current iterative search optimization operation is wrong, the target control voltage threshold is set to the preset voltage offset value determined in the previous iterative search optimization operation, and when the next iterative search optimization operation is performed on the target control voltage threshold, the corresponding preset voltage offset value is reversely set based on the current preset voltage offset value. That is, the current voltage offset value adjustment is abandoned, and the voltage offset value obtained after the previous adjustment that minimizes the erroneous reference value is restored, and then the next time the voltage control threshold is adjusted, the opposite direction is used for adjustment. Specifically, if the current adjustment is to increase the voltage offset value, the next adjustment is to reduce the voltage offset value; if the current adjustment is to reduce the voltage offset value, the next adjustment is to increase the voltage offset value.

[0095] Figure 2 A schematic diagram of a process for determining a voltage offset value of a control voltage threshold provided in an embodiment of the present application. Figure 2 As shown, each control voltage threshold is set using the initial voltage offset value (V1) to determine the corresponding initial reference value E1; based on the initial voltage offset value (V1), the preset voltage offset value (V2) is searched to the left to determine the corresponding adjustment reference value E2, at which time the adjustment reference value E2> the initial reference value E1, indicating that the search direction of the current iterative search optimization operation is wrong, so the target control voltage threshold is set to the preset voltage offset value (V1) determined in the previous iterative search optimization operation, and when the next iterative search optimization operation is performed on the target control voltage threshold, the preset voltage offset value (V3) is searched to the right based on the current preset voltage offset value (V1), at which time the adjustment reference value E3< the adjustment reference value E2; based on the preset voltage offset value (V3), the preset voltage offset value (V4) is continued to be searched to the right to determine the corresponding adjustment reference value E4, at which time the adjustment reference value E4< the adjustment reference value E3; through multiple iterative search optimization operations, when the adjustment reference value is less than the preset decoding capability value and / or the number of searches reaches the preset search number threshold, the iterative search optimization operation stops and the optimal voltage offset value is determined.

[0096] According to the method of this embodiment, when it is determined that the adjustment reference value is greater than the initial reference value, by changing the adjustment direction of the voltage offset value and continuing the search, the efficiency of finding the voltage offset combination that has the highest accuracy in reading data for the page can be improved, and the efficiency of determining the voltage offset value for controlling the voltage threshold can be improved.

[0097] On the basis of the above embodiments, this embodiment further illustrates and optimizes the technical solution. Specifically, in this embodiment, after determining the target control voltage threshold from each control voltage threshold in a polling manner, setting the target control voltage threshold using a preset voltage offset value, setting other control voltage thresholds using an initial voltage offset value, and determining an adjustment reference value corresponding to the page, the method further includes:

[0098] Determine whether the preset end condition is currently reached;

[0099] If the preset end condition is reached, the iterative search optimization operation ends.

[0100] In this embodiment, the preset end condition includes that the number of searches reaches a preset search number threshold, and / or the adjustment reference value corresponding to the page is less than a preset decoding capability value.

[0101] The preset search times threshold refers to the upper limit of the total number of searches for the page set in advance. The specific value of the preset search times threshold can be set according to actual needs, and this embodiment does not limit this. In this embodiment, adjusting the control voltage threshold once means performing an iterative search optimization operation. Assuming that the page has three control voltage thresholds, the preset search times threshold is 12, and each corresponding control voltage threshold can perform 4 iterative search optimization operations.

[0102] In actual applications, the search count can be preset, and the search count is updated after each iterative search optimization operation is performed; the updated search count is compared with the preset search count threshold; if the updated search count is less than the preset search count threshold, it means that the preset end condition has not been met at present, so return to step S300: determine the target control voltage threshold from each control voltage threshold in a polling manner, set the target control voltage threshold using the preset voltage offset value, set other control voltage thresholds using the initial voltage offset value, and determine the adjustment reference value corresponding to the page; other control voltage thresholds are control voltage thresholds other than the target control voltage threshold in each control voltage threshold, and continue the iterative search optimization operation; if the updated search count is greater than or equal to the preset search count threshold, it means that the preset condition is currently met, so the iterative search optimization operation is terminated.

[0103] The preset decoding capability value may be an ECC first decoding capability value (Low Power Algorithm) or an ECC second decoding capability value (High Performance Algorithm).

[0104] In a specific example, after determining the target control voltage threshold from each control voltage threshold in a polling manner each time, setting the target control voltage threshold using a preset voltage offset value, setting other control voltage thresholds using an initial voltage offset value, and determining the adjustment reference value corresponding to the page; judging whether the adjustment reference value is less than or equal to the preset decoding capability value; if the adjustment reference value is greater than the preset decoding capability value, it indicates that the preset end condition has not been met at present, and therefore returns to step S300: determining the target control voltage threshold from each control voltage threshold in a polling manner, setting the target control voltage threshold using a preset voltage offset value, setting other control voltage thresholds using an initial voltage offset value, and determining the adjustment reference value corresponding to the page; the other control voltage thresholds are the control voltage thresholds other than the target control voltage threshold among the control voltage thresholds, and the iterative search optimization operation continues; if the adjustment reference value is less than the preset decoding capability value, it indicates that the preset end condition has been met at present, and therefore the iterative search optimization operation ends.

[0105] In another specific embodiment, the method further includes: after reaching a preset pause condition, stopping the iterative search optimization operation and saving the search state; after receiving a trigger instruction, obtaining a pre-stored search state, and continuing to perform the iterative search optimization operation based on the search state. In an embodiment, the preset pause condition includes that the number of searches reaches a preset pause number threshold, and / or the adjustment reference value corresponding to the page is less than a preset pause value; the preset pause number threshold is less than a preset search number threshold, and the preset pause value is less than a preset decoding capability value.

[0106] According to the method of this embodiment, it is possible to avoid infinite loop execution of iterative search optimization operations, thereby saving system resources.

[0107] Based on the above embodiment, this embodiment further illustrates and optimizes the technical solution. Specifically, in this embodiment, the process of determining the preset voltage offset value includes:

[0108] The preset voltage offset value is determined based on a linear approximation algorithm or an error number gradient descent algorithm.

[0109] Among them, the linear approximation algorithm refers to an algorithm for narrowing the search interval of the optimal voltage offset value, that is, for predicting which voltage offset value may minimize the number of errors or characteristic values. In a specific example, assume that the reference values ​​(number of errors or characteristic values) corresponding to the two voltage offset values ​​V1 and V2 are E1 and E2 respectively; calculate the midpoint voltage offset value Vm between V1 and V2, Vm = (V1 + V2) / 2; perform data reading operation based on the midpoint voltage offset value Vm, and determine the corresponding reference value Em; if Em is less than the smaller value of E1 and E2, it means that Vm is a better voltage offset value, so according to the comparison result of Em with E1 and E2, the interval containing Vm is used as a new search interval, and the above steps are repeated until the voltage offset value corresponding to the minimum reference value is found.

[0110] The error number gradient descent algorithm refers to an algorithm that iteratively adjusts parameters to minimize the reference value. The gradient of the reference value relative to the voltage offset value is determined according to the rate of change of the reference value corresponding to different voltage offset values; based on the voltage offset value, the voltage offset value is updated using the gradient and a preset learning rate; the gradient is calculated and the voltage offset value is updated repeatedly until the voltage offset value makes the reference value reach the minimum value.

[0111] It can be understood that the linear approximation algorithm and the error number gradient descent algorithm are two effective minimum value search methods. This embodiment uses the linear approximation algorithm and the error number gradient descent algorithm to determine the preset voltage offset value, which can improve the efficiency of determining the voltage offset value of the control voltage threshold.

[0112] It should be understood that the size of the serial numbers of the steps in the above embodiments does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0113] It should be noted that the information collection process (such as face image collection process, fingerprint information collection process, etc.) / feature extraction process involved in this application is performed with the user's knowledge and permission, that is, the information collection process / feature extraction process complies with the requirements of laws and regulations and does not constitute an act that harms the public interest.

[0114] Figure 3 FIG. 1 is a schematic diagram of a structure of a device for determining a voltage offset value of a control voltage threshold provided by an embodiment of the present application. Figure 3 As shown, the voltage offset value determining device of the control voltage threshold of this embodiment includes a first determining module 310, a second determining module 320, an iterative search module 330, a first execution module 340 and a second execution module 350; wherein,

[0115] A first determination module 310 is used to determine the control voltage threshold corresponding to each storage unit in the page according to the chip type of the non-volatile memory;

[0116] A second determination module 320, configured to set each control voltage threshold using the initial voltage offset value and determine an initial reference value corresponding to the page;

[0117] an iterative search module 330, for determining a target control voltage threshold from each control voltage threshold in a polling manner, setting the target control voltage threshold using a preset voltage offset value, setting other control voltage thresholds using an initial voltage offset value, and determining an adjustment reference value corresponding to the page; the other control voltage thresholds are control voltage thresholds other than the target control voltage threshold among each control voltage threshold;

[0118] A first execution module 340, configured to determine the target control voltage threshold as a preset voltage offset value and call an iterative search module if the adjustment reference value is less than the initial reference value;

[0119] The second execution module 350 is configured to set the target control voltage threshold to a preset voltage offset value determined in a previous iterative search optimization operation if the adjustment reference value is greater than the initial reference value, and call the iterative search module.

[0120] An apparatus for determining a voltage offset value for a control voltage threshold provided in an embodiment of the present application has the same beneficial effects as the above-mentioned method for determining a voltage offset value for a control voltage threshold.

[0121] In one embodiment, the iterative search module includes:

[0122] A polling determination submodule, used to determine a target control voltage threshold from each control voltage threshold in a polling manner;

[0123] A setting submodule, used to set a target control voltage threshold using a preset voltage offset value, and to set other control voltage thresholds using an initial voltage offset value;

[0124] An actual voltage threshold determination submodule, used to perform a data reading operation on a corresponding storage unit based on a preset voltage offset value and an initial voltage offset value, and obtain an actual voltage threshold of each storage unit;

[0125] A storage unit state determination submodule, used to determine the storage unit state according to the magnitude relationship between the actual voltage threshold and the preset voltage offset value;

[0126] The adjustment reference value determination submodule is used to determine the adjustment reference value corresponding to the page according to the state of each storage unit.

[0127] In one embodiment, a device for determining a voltage offset value of a control voltage threshold further includes:

[0128] The judgment module is used to determine whether the initial reference value is greater than the preset decoding capability value; if the initial reference value is greater than the preset decoding capability value, the iterative search module is called.

[0129] In one embodiment, the page size of the page is a fixed data length, a codeword length of an error correction code, or a physical page length.

[0130] In one embodiment, the second execution module includes:

[0131] The second execution submodule is used to set the target control voltage threshold to the preset voltage offset value determined in the previous iterative search optimization operation if the adjustment reference value is greater than the initial reference value, and to reversely set the corresponding preset voltage offset value based on the current preset voltage offset value when the next iterative search optimization operation is performed on the target control voltage threshold.

[0132] In one embodiment, a device for determining a voltage offset value of a control voltage threshold further includes:

[0133] The end condition judgment submodule is used to determine whether the preset end condition is currently met; if the preset end condition is met, the iterative search optimization operation is terminated.

[0134] In one embodiment, the iterative search module includes:

[0135] The preset voltage offset value determination submodule is used to determine the preset voltage offset value based on a linear approximation algorithm or an error number gradient descent algorithm.

[0136] It should be noted that the information interaction, execution process, etc. between the above-mentioned devices / units are based on the same concept as the method embodiment of the present application. Their specific functions and technical effects can be found in the method embodiment part and will not be repeated here.

[0137] The technicians in the relevant field can clearly understand that for the convenience and simplicity of description, only the division of the above-mentioned functional units and modules is used as an example for illustration. In practical applications, the above-mentioned function allocation can be completed by different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiment can be integrated in a processing unit, or each unit can exist physically separately, or two or more units can be integrated in one unit. The above-mentioned integrated unit can be implemented in the form of hardware or in the form of software functional units. In addition, the specific names of the functional units and modules are only for the convenience of distinguishing each other, and are not used to limit the scope of protection of this application. The specific working process of the units and modules in the above-mentioned system can refer to the corresponding process in the aforementioned method embodiment, which will not be repeated here.

[0138] Figure 4 A schematic diagram of the structure of a terminal device provided in an embodiment of the present application. Figure 4 As shown, the terminal device 400 of this embodiment includes a memory 401, a processor 402, and a computer program 403 stored in the memory 401 and executable on the processor 402; when the processor 402 executes the computer program 403, the steps in the above-mentioned methods for determining the voltage offset value of the control voltage threshold are implemented; or when the processor 402 executes the computer program 403, the functions of the modules / units in the above-mentioned device embodiments are implemented to determine the voltage offset value of the control voltage threshold.

[0139] Exemplarily, the computer program 403 may be divided into one or more modules / units, one or more modules / units are stored in the memory 401, and are executed by the processor 402 to implement the method of the embodiment of the present application. One or more modules / units may be a series of computer program instruction segments that can perform specific functions, and the instruction segments are used to describe the execution process of the computer program 403 in the terminal device 400. For example, the computer program 403 may be divided into a first determination module, a second determination module, an iterative search module, a first execution module, and a second execution module, and the specific functions of each module are as follows:

[0140] A first determination module, used to determine the control voltage threshold corresponding to each storage unit in the page according to the chip type of the non-volatile memory;

[0141] A second determination module, used to set each control voltage threshold using the initial voltage offset value, and determine an initial reference value corresponding to the page;

[0142] an iterative search module, for determining a target control voltage threshold from each control voltage threshold in a polling manner, setting the target control voltage threshold using a preset voltage offset value, setting other control voltage thresholds using an initial voltage offset value, and determining an adjustment reference value corresponding to the page; the other control voltage thresholds are control voltage thresholds other than the target control voltage threshold among the control voltage thresholds;

[0143] A first execution module, configured to determine the target control voltage threshold as a preset voltage offset value and call an iterative search module if the adjustment reference value is less than the initial reference value;

[0144] The second execution module is used to set the target control voltage threshold to the preset voltage offset value determined in the previous iterative search optimization operation if the adjustment reference value is greater than the initial reference value, and call the iterative search module.

[0145] In application, the terminal device 400 may be a computing device such as a desktop computer, a notebook, a PDA, or a cloud server. The terminal device 400 may include but is not limited to a memory 401 and a processor 402. Those skilled in the art will appreciate that Figure 4 It is only an example of a terminal device and does not constitute a limitation of the terminal device. It may include more or fewer components than shown in the figure, or a combination of certain components, or different components. For example, the terminal device may also include input and output devices, network access devices, buses, etc.; among which, the input and output devices may include cameras, audio acquisition / playback devices, display screens, etc.; the network access device may include a communication module for wireless communication with external devices.

[0146] In applications, the processor may be a central processing unit (CPU), other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor may be a microprocessor or any conventional processor, etc.

[0147] In applications, the memory can be an internal storage unit of a terminal device, such as a hard disk or memory of the terminal device; it can also be an external storage device of the terminal device, such as a plug-in hard disk equipped on the terminal device, a smart media card (SMC), a secure digital (SD) card, a flash card, etc.; it can also include both the internal storage unit and the external storage device of the terminal device. The memory is used to store operating systems, applications, boot loaders, data, and other programs, such as program codes of computer programs. The memory can also be used to temporarily store data that has been output or is about to be output.

[0148] The embodiment of the present application further provides a computer-readable storage medium, which stores a computer program. When the computer program is executed by a processor, the steps in the above-mentioned method embodiments can be implemented.

[0149] The present application implements all or part of the processes in the above-mentioned embodiment method, which can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a computer-readable storage medium. When the computer program is executed by the processor, the steps of each of the above-mentioned method embodiments can be implemented. Among them, the computer program includes computer program code, and the computer program code can be in source code form, object code form, executable file or some intermediate form. The computer-readable medium may at least include: any entity or device capable of carrying the computer program code to a terminal device, a recording medium, a computer memory, a read-only memory (ROM), a random access memory (RAM), an electric carrier signal, a telecommunication signal, and a software distribution medium. For example, a USB flash drive, a mobile hard disk, a magnetic disk or an optical disk.

[0150] A computer-readable storage medium provided in an embodiment of the present application has the same beneficial effects as the above-mentioned method for determining a voltage offset value of a control voltage threshold.

[0151] An embodiment of the present application also provides a computer program product, including a computer program, which can implement the steps in the above-mentioned method embodiments when executed by a processor.

[0152] A computer program product provided in an embodiment of the present application has the same beneficial effects as the above-mentioned method for determining a voltage offset value of a control voltage threshold.

[0153] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described or recorded in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0154] Those of ordinary skill in the art will appreciate that the devices and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application.

[0155] In the embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interface, indirect coupling or communication connection of devices, which can be electrical, mechanical or other forms.

[0156] The embodiments described above are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, a person skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. A method for determining a voltage offset value of a control voltage threshold, characterized in that: The method comprises: Determine the control voltage threshold corresponding to each storage unit in the page according to the chip type of the non-volatile memory; Using the initial voltage offset value to set each of the control voltage thresholds, and determining an initial reference value corresponding to the page; Determine a target control voltage threshold from each of the control voltage thresholds in a polling manner, set the target control voltage threshold using a preset voltage offset value, set other control voltage thresholds using the initial voltage offset value, and determine an adjustment reference value corresponding to the page; the other control voltage thresholds are control voltage thresholds other than the target control voltage threshold among the control voltage thresholds; If the adjustment reference value is less than the initial reference value, determining the target control voltage threshold to be the preset voltage offset value, and returning to the step of determining the target control voltage threshold from each of the control voltage thresholds in a polling manner, setting the target control voltage threshold by using the preset voltage offset value, setting other control voltage thresholds by using the initial voltage offset value, and determining the adjustment reference value corresponding to the page; If the adjustment reference value is greater than the initial reference value, the target control voltage threshold is set to the preset voltage offset value determined in the previous iterative search optimization operation, and the step of determining the target control voltage threshold from each of the control voltage thresholds in a polling manner is returned, the target control voltage threshold is set using the preset voltage offset value, other control voltage thresholds are set using the initial voltage offset value, and the step of determining the adjustment reference value corresponding to the page is determined.

2. The method according to claim 1, characterized in that The step of determining a target control voltage threshold from each of the control voltage thresholds in a polling manner, setting the target control voltage threshold using a preset voltage offset value, setting other control voltage thresholds using the initial voltage offset value, and determining an adjustment reference value corresponding to the page includes: Determine a target control voltage threshold from each of the control voltage thresholds in a polling manner; Using a preset voltage offset value to set the target control voltage threshold, and using the initial voltage offset value to set other control voltage thresholds; Performing a data reading operation on a corresponding storage unit based on the preset voltage offset value and the initial voltage offset value to obtain an actual voltage threshold value of each storage unit; Determining a storage unit state according to a magnitude relationship between the actual voltage threshold and the preset voltage offset value; An adjustment reference value corresponding to the page is determined according to the state of each of the storage cells.

3. The method according to claim 1, characterized in that After using the initial voltage offset value to set each of the control voltage thresholds and determining the initial reference value corresponding to the page, the method further includes: Determining whether the initial reference value is greater than a preset decoding capability value; If the initial reference value is greater than the preset decoding capability value, the step of determining the target control voltage threshold from each of the control voltage thresholds in a polling manner, setting the target control voltage threshold using the preset voltage offset value, setting other control voltage thresholds using the initial voltage offset value, and determining the adjustment reference value corresponding to the page is entered.

4. The method according to claim 1, characterized in that The page size of the page is a fixed data length, a codeword length of an error correction code, or a physical page length.

5. The method according to claim 1, characterized in that If the adjustment reference value is greater than the initial reference value, setting the target control voltage threshold to the preset voltage offset value determined in the previous iterative search optimization operation includes: If the adjustment reference value is greater than the initial reference value, the target control voltage threshold is set to the preset voltage offset value determined in the previous iterative search optimization operation, and when the next iterative search optimization operation is performed on the target control voltage threshold, the corresponding preset voltage offset value is reversely set based on the current preset voltage offset value.

6. The method according to claim 1, characterized in that After determining the target control voltage threshold from each of the control voltage thresholds in a polling manner, setting the target control voltage threshold using a preset voltage offset value, setting other control voltage thresholds using the initial voltage offset value, and determining an adjustment reference value corresponding to the page, the method further includes: Determine whether the preset end condition is currently reached; If the preset end condition is reached, the iterative search optimization operation ends.

7. The method according to any one of claims 1 to 6, characterized in that: The process of determining the preset voltage offset value includes: The preset voltage offset value is determined based on a linear approximation algorithm or an error number gradient descent algorithm.

8. A device for determining a voltage offset value of a control voltage threshold, characterized in that: The device comprises: A first determination module, used to determine the control voltage threshold corresponding to each storage unit in the page according to the chip type of the non-volatile memory; A second determination module, configured to set each of the control voltage thresholds using an initial voltage offset value, and determine an initial reference value corresponding to the page; an iterative search module, configured to determine a target control voltage threshold from each of the control voltage thresholds in a polling manner, set the target control voltage threshold using a preset voltage offset value, set other control voltage thresholds using the initial voltage offset value, and determine an adjustment reference value corresponding to the page; the other control voltage thresholds are control voltage thresholds other than the target control voltage threshold among the control voltage thresholds; a first execution module, configured to determine the target control voltage threshold as the preset voltage offset value and call the iterative search module if the adjustment reference value is less than the initial reference value; The second execution module is used for setting the target control voltage threshold to the preset voltage offset value determined in the previous iterative search optimization operation if the adjustment reference value is greater than the initial reference value, and calling the iterative search module.

9. A terminal device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 7 are implemented.

10. A computer program product, comprising a computer program, characterized in that When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 7 are implemented.

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