Multilayer electronic component

Abstract

The present disclosure provides a multilayer electronic component. The multilayer electronic component may include a body including a plurality of first dielectric layers, internal electrodes including first and second internal electrodes spaced apart from each other on the same first dielectric layer, and a floating electrode disposed on the first dielectric layer, the floating electrodes and the inner electrodes are alternately arranged in a first direction, and the first dielectric layers are arranged between the floating electrodes and the inner electrodes; and first and second external electrodes disposed on the body and connected to the first and second internal electrodes, respectively, and the body may include a dual internal electrode including a dual-layer internal electrode, the double-layer internal electrodes are disposed adjacent to each other in the first direction and a second dielectric layer is interposed between the double-layer internal electrodes.

Description

[0001] This application claims the benefit of priority from Korean Patent Application No. 10-2023-0162294 filed in the Korean Intellectual Property Office on November 21, 2023, the disclosure of which is incorporated herein in its entirety by reference. Technical Field

[0002] The present disclosure relates to a multi-layer electronic assembly. Background Art

[0003] Multilayer ceramic capacitors (MLCC, a type of multilayer electronic component) are chip-type capacitors that are mounted on printed circuit boards of various types of electronic products such as image display devices (including liquid crystal displays (LCDs) and plasma display panels (PDPs)), computers, smart phones, and mobile phones, and are used to charge or discharge them.

[0004] Multilayer ceramic capacitors are used as components in various electronic devices because they have a small size, ensure high capacitance, and are easy to mount. With the miniaturization and high output power of various electronic devices such as computers and mobile devices, the demand for miniaturization and high capacitance of multilayer ceramic capacitors has increased.

[0005] In addition, in a high voltage environment, an electrodistortion effect occurs that may cause deformation of components due to voltage application, and this electrodistortion effect is concentrated in the central portion of the multilayer electronic component and may generate cracks. It is necessary to design a structure that can prevent stress concentration to prevent such cracks. Summary of the invention

[0006] An aspect of the present disclosure is to disperse stress caused by electrical distortion effects.

[0007] An aspect of the present disclosure is to provide a multilayer electronic assembly with improved mechanical properties.

[0008] An aspect of the present disclosure is to provide a multilayer electronic component having improved capacitance characteristics.

[0009] However, aspects of the present disclosure are not limited to the above and may be more easily understood in the course of describing specific example embodiments of the present disclosure.

[0010] A multilayer electronic component according to an example embodiment of the present disclosure may include: a main body including a plurality of first dielectric layers, internal electrodes and floating electrodes, the internal electrodes including first internal electrodes and second internal electrodes spaced apart from each other on the same first dielectric layer, the floating electrodes and the internal electrodes being alternately arranged in a first direction with the first dielectric layer interposed between the floating electrodes and the internal electrodes; and first external electrodes and second external electrodes arranged on the main body and connected to the first internal electrodes and the second internal electrodes, respectively, wherein the main body includes double internal electrodes including double-layer internal electrodes, the double-layer internal electrodes being arranged adjacent to each other in the first direction with a second dielectric layer interposed between the double-layer internal electrodes.

[0011] According to another example embodiment of the present disclosure, a multilayer electronic component may include: a main body including a plurality of first dielectric layers, inner electrodes and floating electrodes, the inner electrodes including first inner electrodes and second inner electrodes spaced apart from each other on the same first dielectric layer, the floating electrodes and the inner electrodes being alternately arranged in a first direction with the first dielectric layer interposed between the floating electrodes and the inner electrodes; and first outer electrodes and second outer electrodes disposed on the main body and connected to the first inner electrodes and the second inner electrodes, respectively, wherein the main body includes a double floating electrode including a double-layer floating electrode, the double-layer floating electrodes being disposed adjacent to each other in the first direction with a second dielectric layer interposed between the double-layer floating electrodes.

[0012] One of the various effects of the present disclosure is to prevent the generation of cracks by dispersing stress due to the electrical distortion effect.

[0013] One of the various effects of the present disclosure is to improve the mechanical properties of multilayer electronic components.

[0014] One of the various effects of the present disclosure is to improve the capacitance characteristics of a multilayer electronic component.

[0015] However, the advantages and effects of the present application are not limited to the foregoing and may be more easily understood in the course of describing a specific exemplary embodiment of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above and other aspects, features and advantages of the present disclosure will be more clearly understood through the following detailed description in conjunction with the accompanying drawings, in which: Figure 1 is a perspective view schematically illustrating a multilayer electronic component according to an example embodiment of the present disclosure; Figure 2 is along Figure 1 A schematic cross-sectional view and a partially enlarged view taken along line II'; Figure 3 Schematically shows Figure 2An enlarged view of region M; Figure 4 According to another embodiment of the present disclosure Figure 1 A schematic cross-sectional view and a partially enlarged view taken along line II'; Figure 5A is an image obtained by capturing an image of a central area of ​​a subject in a first direction with a scanning electron microscope (SEM) in a comparative example; and Figure 5B is an image obtained by capturing an image of a central area of ​​a subject in a first direction with a scanning electron microscope (SEM) in the inventive example. DETAILED DESCRIPTION

[0017] Hereinafter, example embodiments of the present disclosure will be described with reference to the accompanying drawings. However, example embodiments of the present disclosure may be illustrated in many different forms and should not be construed as being limited to the specific example embodiments set forth herein. The example embodiments disclosed herein are provided to better explain the present disclosure to those skilled in the art. Therefore, in the accompanying drawings, for the sake of clarity, the shapes and sizes of the elements may be exaggerated, and the same reference numerals will always be used to represent the same elements.

[0018] In addition, in order to clearly describe the present disclosure in the drawings, contents irrelevant to the description are omitted, and although the size (e.g., thickness) of each component shown in the drawings is arbitrarily shown for the convenience of description, the present disclosure is not limited thereto. In addition, components having the same functions within the scope of the same idea are described using the same reference numerals. Throughout the specification, unless otherwise specified, when a specific part is described as "including" or "comprising" a specific component, this indicates that other components are not excluded and other components may be further included.

[0019] In the drawings, a first direction may be defined as a thickness direction, a second direction may be defined as a length direction, and a third direction may be defined as a width direction.

[0020] Multilayer electronic components Figure 1 is a perspective view schematically illustrating a multilayer electronic component according to an example embodiment of the present disclosure.

[0021] Figure 2 is along Figure 1 Schematic cross-sectional view and a partially enlarged view taken along line II'.

[0022] Figure 3 Schematically shows Figure 2 Magnified view of area M.

[0023] Figure 4 According to another embodiment of the present disclosure Figure 1 Schematic cross-sectional view and a partially enlarged view taken along line II'.

[0024] In the following, reference will be made to Figures 1 to 4 A multilayer electronic component according to an exemplary embodiment of the present disclosure is described in detail. As an example of a multilayer electronic component, a multilayer ceramic capacitor will be described, but the multilayer electronic component of the present disclosure can also be applied to various electronic products using a dielectric composition, such as an inductor, a piezoelectric element, a varistor, or a thermistor.

[0025] The multilayer electronic component 100 according to an example embodiment of the present disclosure may include: a body 110 including a plurality of first dielectric layers 111a, internal electrodes 121 and 122, and a floating electrode 123, the internal electrodes 121 and 122 including first and second internal electrodes 121 and 122 spaced apart from each other on the same first dielectric layer 111a, the floating electrodes 123 and the internal electrodes 121 and 122 being alternately disposed in a first direction with the first dielectric layer 111a interposed between the floating electrodes 123 and the internal electrodes 121 and 122; and first and second external electrodes 131 and 132 disposed on the body 110 and connected to the first and second internal electrodes 121 and 122, respectively. The body 110 may further include dual internal electrodes 121b and 122b, that is, the internal electrodes 121 and 122 of the body 110 may include the dual internal electrodes 121b and 122b. The double inner electrode 121b may include double-layer inner electrodes 121b-1 and 121b-2, which are disposed adjacent to each other in the first direction with the second dielectric layer 111b interposed therebetween. The double inner electrode 122b may include double-layer inner electrodes 122b-1 and 122b-2, which are disposed adjacent to each other in the first direction with the second dielectric layer 111b interposed therebetween.

[0026] The body 110 may include a first dielectric layer 111 a , internal electrodes 121 and 122 , and a floating electrode 123 .

[0027] Specifically, the body 110 may include a capacitor forming part for forming a capacitor therein, and the capacitor forming part may include inner electrodes 121 and 122 alternately stacked in a first direction, a floating electrode 123 , and a first dielectric layer 111 a interposed therebetween.

[0028] There is no particular limitation on the specific shape of the body 110, but Figure 1 As shown in FIG, the body 110 may have a hexahedral shape or a shape similar to the hexahedral shape. Due to shrinkage of the ceramic powder included in the body 110 during the sintering process, the body 110 may not have a hexahedral shape with perfect straight lines but may generally have a hexahedral shape.

[0029] The main body 110 may include a first surface 1 and a second surface 2 that face each other in a first direction, a third surface 3 and a fourth surface 4 that are connected to the first surface 1 and the second surface 2 and face each other in a second direction, and a fifth surface 5 and a sixth surface 6 that are connected to the first surface 1, the second surface 2, the third surface 3, and the fourth surface 4 and face each other in a third direction.

[0030] In a state where a plurality of first dielectric layers 111a included in the main body 110 are sintered, adjacent first dielectric layers 111a may be integrated such that it is difficult to identify the boundary between them without using a scanning electron microscope (SEM).

[0031] There is no limitation on the material included in the first dielectric layer 111a as long as sufficient electrostatic capacitance can be obtained using it. Generally, perovskite (ABO 3 )-based materials may be used, and for example, barium titanate-based materials, lead composite perovskite-based materials, or strontium titanate-based materials may be used. The barium titanate-based materials may include BaTiO 3 -based ceramic particles, and examples of the BaTiO 3 -based ceramic particles may include BaTiO 3 and (Ba 3 Ca 1-x )TiO x formed by partially solid-soluting calcium (Ca) and / or zirconium (Zr) in BaTiO 3 (0 < x < 1), Ba(Ti 1-y Ca y )O 3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O 3 (0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y )O 3 (0 < y < 1).

[0032] In addition, as the material included in the first dielectric layer 111a, various ceramic additives, organic solvents, binders, dispersants, etc. may be added to particles such as barium titanate (BaTiO 3 ) according to the purpose of the present disclosure.

[0033] The thickness td1 of the first dielectric layer 111a does not need to be particularly limited.

[0034] However, to ensure stable reliability of the multilayer electronic component 100 under a high voltage environment, the thickness td1 of the first dielectric layer 111a may be less than or equal to 100 μm, and preferably, the thickness td1 of the first dielectric layer 111a may be less than or equal to 90 μm.

[0035] However, the present disclosure is not limited thereto, and in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component 100 , the thickness td1 of the first dielectric layer 111 a may be 30 μm or less, preferably 20 μm or less, and more preferably 10 μm or less.

[0036] In ultra-small products, the thickness td1 of the first dielectric layer 111 a may be equal to or less than 3.0 μm, preferably equal to or less than 1.0 μm, and more preferably equal to or less than 0.6 μm.

[0037] Here, the thickness td1 of the first dielectric layer 111 a may refer to a thickness td1 of the first dielectric layer 111 a in the first direction between the internal electrodes 121 and 122 and the adjacent floating electrode 123 disposed on the same level.

[0038] In addition, the thickness td1 of the first dielectric layer 111a may refer to the size of the first dielectric layer 111a in the first direction. In addition, the thickness td1 of the first dielectric layer 111a may refer to the average thickness of the first dielectric layer 111a, and may refer to the average size of the first dielectric layer 111a in the first direction. For example, the average thickness td1 of the first dielectric layer 111a may refer to the average thickness of at least one dielectric layer in the first dielectric layer 111a.

[0039] The average size of the first dielectric layer 111a in the first direction may be measured by scanning a cross section of the body 110 in the first direction and the second direction with a scanning electron microscope (SEM) at a magnification of 10,000 times to obtain an image. More specifically, the average size of one first dielectric layer 111a in the first direction may refer to an average value calculated by measuring the size of the first direction at 30 points of one first dielectric layer 111a spaced apart from each other at equal intervals in the second direction in the scanned image. When the average value is obtained by extending the average thickness measurement to 10 first dielectric layers 111a, the average thickness of the first dielectric layer 111a in the first direction may be more generalized.

[0040] In the present disclosure, the inner electrodes 121 and 122 will be described as including single-layer inner electrodes 121a and 122a and double inner electrodes 121b and 122b, and unless there are special circumstances, the description of the inner electrodes 121 and 122 can be equally applied to the single-layer inner electrodes 121a and 122a and the double inner electrodes 121b and 122b.

[0041] The inner electrodes 121 and 122 located on the same first dielectric layer 111a may be spaced apart from each other in the second direction. That is, the inner electrodes 121 and 122 located on the same first dielectric layer 111a may be arranged at substantially the same level in the first direction. As used herein, the expression "substantially the same level" may refer to being at the same height level relative to the height level as will be understood by those skilled in the art, and allowing for approximations, inaccuracies and limitations of measurements in relevant circumstances. In one or more aspects, the terms "substantially", "approximately" and "approximately" may provide industry-accepted errors for their corresponding terms and / or correlations between items, such as errors of ±1%, ±5% or ±10% of the actual value, or other suitable errors.

[0042] The internal electrodes 121 and 122 may include a first internal electrode 121 and a second internal electrode 122, and the first internal electrode 121 and the second internal electrode 122 located on the same first dielectric layer 111a included in the body 110 may be spaced apart from each other in the second direction and may be exposed to the third surface 3 and the fourth surface 4 of the body 110, respectively.

[0043] More specifically, the first internal electrode 121 may be spaced apart from the fourth surface 4 and the second internal electrode 122 and may be exposed through the third surface 3, and the second internal electrode 122 may be spaced apart from the third surface 3 and the first internal electrode 121 and may be exposed through the fourth surface 4. The first external electrode 131 may be disposed on the third surface 3 of the body 110 and may be connected to the first internal electrode 121, and the second external electrode 132 may be disposed on the fourth surface 4 of the body 110 and may be connected to the second internal electrode 122.

[0044] That is, the first internal electrode 121 may be connected to the first external electrode 131 without being connected to the second external electrode 132, and the second internal electrode 122 may be connected to the second external electrode 132 without being connected to the first external electrode 131. In this case, the first internal electrode 121 and the second internal electrode 122 may be electrically separated from each other by a region of the first dielectric layer 111 a disposed in the middle in the second direction.

[0045] The floating electrodes 123 may be alternately arranged with the internal electrodes 121 and 122 in the first direction with the first dielectric layer 111 a interposed therebetween.

[0046] The floating electrode 123 may be disposed on the first dielectric layer 111 a , but is not particularly limited thereto, and may be disposed on a first dielectric layer 111 a different from the first dielectric layer 111 a on which the internal electrodes 121 and 122 are disposed.

[0047] In addition, the floating electrode 123 may be spaced apart from the third surface 3 and the fourth surface 4 of the body 110 , and may not be electrically connected to the first and second external electrodes 131 and 132 .

[0048] The floating electrode 123 may partially overlap with the internal electrodes 121 and 122 in a first direction to form a capacitor. More specifically, when one end of the first internal electrode 121 contacts the third surface 3, the other end of the first internal electrode 121 may partially overlap with one end of the floating electrode 123, and when one end of the second internal electrode 122 contacts the fourth surface 4, the other end of the second internal electrode 122 may partially overlap with the other end of the floating electrode 123.

[0049] The area where the floating electrode 123 and the internal electrodes 121 and 122 overlap each other is not particularly limited as long as sufficient electrostatic capacitance can be obtained therewith.

[0050] In addition, the body 110 may be formed by alternately stacking ceramic green sheets on which the conductive paste for the first and second internal electrodes 121 and 122 is printed and ceramic green sheets on which the conductive paste for the floating electrode 123 is printed, and then sintering the ceramic green sheets.

[0051] The internal electrodes 121 and 122 and the floating electrode 123 may be formed using the same composition, but are not particularly limited thereto, and may be formed using different compositions. The materials included in the internal electrodes 121 and 122 and the floating electrode 123 are not particularly limited, and a material having excellent conductivity may be used. For example, the internal electrodes 121 and 122 and the floating electrode 123 may include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0052] In addition, the internal electrodes 121 and 122 and the floating electrode 123 may be formed by printing a conductive paste for the internal electrodes and the floating electrodes including one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof on a ceramic green sheet. The printing method of the conductive paste for the internal electrodes and the floating electrodes may be a screen printing method or a gravure printing method, but the present disclosure is not limited thereto.

[0053] In addition, the thickness te1 of the first internal electrode 121 , the thickness te2 of the second internal electrode 122 , and the thickness te3 of the floating electrode 123 do not need to be particularly limited.

[0054] However, in order to achieve high capacitance of the multilayer electronic component 100, each of the thickness te1 of the first internal electrode 121, the thickness te2 of the second internal electrode 122, and the thickness te3 of the floating electrode 123 may be less than 3.0 μm, and in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component 100, each of the thickness te1 of the first internal electrode 121, the thickness te2 of the second internal electrode 122, and the thickness te3 of the floating electrode 123 may be less than or equal to 1.0 μm, preferably, less than or equal to 0.6 μm, and more preferably, less than or equal to 0.4 μm.

[0055] Here, the thickness te1 of the first internal electrode 121, the thickness te2 of the second internal electrode 122, and the thickness te3 of the floating electrode 123 may refer to the size of the internal electrodes 121 and 122 and the floating electrode 123 in the first direction. In addition, the thickness te1 of the first internal electrode 121, the thickness te2 of the second internal electrode 122, and the thickness te3 of the floating electrode 123 may refer to the average thickness of the internal electrodes 121 and 122 and the floating electrode 123, and may refer to the average size of the internal electrodes 121 and 122 and the floating electrode 123 in the first direction. For example, the average thicknesses te1 and te2 of the internal electrodes 121 and 122 may refer to the average thickness of at least one of the internal electrodes 121 and 122 (hereinafter, te1 will be used to represent the average thickness of the internal electrodes 121 and 122 (for example, the single-layer internal electrodes 121a and 122a)), and the average thickness te3 of the floating electrode 123 may refer to the average thickness of at least one of the floating electrodes 123.

[0056] The average size of the internal electrodes 121 and 122 and the floating electrode 123 in the first direction may be measured by an image obtained by scanning a cross section of the body 110 in the first direction and the second direction using a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of the single-layer internal electrodes 121a and 122a, the double internal electrodes 121b and 122b, and the floating electrode 123 in the first direction may be an average value calculated by measuring the size of the first direction at 30 points spaced apart from each other at equal intervals in the second direction of one single-layer internal electrode 121a and 122a, one double internal electrode 121b and 122b, and one floating electrode 123 in the scanned image. In addition, when the average value is obtained by extending the average thickness measurement to 10 internal electrodes 121 and 122 and 10 floating electrodes 123, the average thickness of the internal electrodes 121 and 122 and the floating electrode 123 may be more generalized. The measurement of the average size is not limited to these examples, and a person of ordinary skill in the art can select the number of measurement points, the intervals between measurement points, etc., if necessary.

[0057] In an example embodiment of the present disclosure, the body 110 may include a double inner electrode 121b in which double-layer inner electrodes 121b-1 and 121b-2 are arranged adjacent to each other in a first direction with a second dielectric layer 111b interposed therebetween, and a double inner electrode 122b in which double-layer inner electrodes 122b-1 and 122b-2 are arranged adjacent to each other in a first direction with a second dielectric layer 111b interposed therebetween.

[0058] In addition to the double inner electrodes 121b and 122b having a double-layer inner electrode structure, each layer of the inner electrode in the double inner electrodes 121b and 122b may be the same as the single-layer inner electrodes 121a and 122a, and the description of the inner electrodes 121 and 122 and the single-layer inner electrodes 121a and 122a may also be applied to the double inner electrodes 121b and 122b.

[0059] More specifically, the dual inner electrodes 121b and 122b may include dual first inner electrodes 121b-1 and 121b-2 and dual second inner electrodes 122b-1 and 122b-2. The dual first inner electrodes 121b-1 and 121b-2 may be a structure in which the dual first-first inner electrodes 121b-1 and the dual first-second inner electrodes 121b-2 are alternately arranged in the first direction with the second dielectric layer 111b interposed therebetween, and the dual second inner electrodes 122b-1 and 122b-2 may be a structure in which the dual second-first inner electrodes 122b-1 and the dual second-second inner electrodes 122b-2 are alternately arranged in the first direction with the second dielectric layer 111b interposed therebetween. That is, the dual first-first inner electrode 121b-1 and the dual second-first inner electrode 122b-1 may be spaced apart from each other in the second direction and disposed on one surface of the second dielectric layer 111b in the first direction, and the dual first-second inner electrode 121b-2 and the dual second-second inner electrode 122b-2 may be spaced apart from each other in the second direction and disposed on another surface of the second dielectric layer 111b in the first direction.

[0060] Since the body 110 includes the dual inner electrodes 121 b and 122 b, the region where stress concentration is caused by the electric distortion effect generated under a high voltage environment can be dispersed to solve the electric distortion stress by preventing the concentration of the electric distortion stress and inducing cracks in the second dielectric layer 111 b between the dual inner electrodes 121 b and 122 b where no capacitor is formed, thereby reducing the voltage applied per unit thickness (dimension in the first direction) of the first dielectric layer 111 a and improving the direct current bias (DC bias) characteristics and the withstand voltage characteristics.

[0061] In this case, the dual internal electrodes 121b and 122b may be disposed in a central portion of the body 110 in the first direction. For example, when the body 110 is divided into three regions in the first direction, the dual internal electrodes 121b and 122b may be disposed in a second region between the first region and the third region among the three regions.

[0062] The dual internal electrodes 121 b and 122 b may be disposed in a central portion of the body 110 in the first direction where the electrical distortion stress is most concentrated, so that the electrical distortion stress may be dispersed and DC bias characteristics and withstand voltage characteristics may be improved.

[0063] In an exemplary embodiment of the present disclosure, the number of the dual inner electrodes 121 b and 122 b included in the body 110 may be one.

[0064] In other words, the body 110 may include a structure in which the single-layered inner electrodes 121a and 122a and the floating electrode 123 are alternately arranged in the first direction with the first dielectric layer 111a interposed therebetween in most regions, and may include one dual inner electrode 121b and 122b having a structure in which the stacking order is (dual first-first inner electrode 121b-1 and dual second-first inner electrode 122b-1)-(second dielectric layer 111b)-(dual first-first second inner electrode 121b-2 and dual second-second inner electrode 122b-2), that is, a structure including the dual inner electrodes 121b and 122b being disposed adjacent to each other in the first direction with the second dielectric layer 111b disposed therebetween is disposed in the central region of the body 110 in the first direction.

[0065] In the multilayer electronic component 100 of the same size, by including only one set of the double inner electrodes 121 b and 122 b , the DC bias voltage applied per unit thickness (1 μm) of the first dielectric layer 111 a may be further reduced.

[0066] Here, including only one set of double inner electrodes 121 b and 122 b may mean including a set of double-layered inner electrodes 121 b - 1 , 122 b - 1 , 121 b - 2 , and 122 b - 2 .

[0067] As the number of the double inner electrodes 121b and 122b increases, a large amount of sintering stress may be generated due to the difference in sintering characteristics between the second dielectric layer 111b and the first dielectric layer 111a, which may actually reduce the withstand voltage characteristics. In addition, the risk of cracks occurring in the first dielectric layer 111a may increase, resulting in an increased risk that the capacitance characteristics may deteriorate.

[0068] The material included in the second dielectric layer 111b is not particularly limited. Generally, perovskite (ABO 3), a base material, and for example, a barium titanate-based material, a lead composite perovskite-based material, or a strontium titanate-based material can be used. The barium titanate-based material may include BaTiO 3 -based ceramic particles, and examples of the BaTiO 3 -based ceramic particles may include BaTiO 3 and (Ba 3 )TiO 1-x Ca x formed by partially solid-soluting calcium (Ca) and / or zirconium (Zr) in BaTiO 3 (0 < x < 1), Ba(Ti 1-y Ca y )O 3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O 3 (0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y )O 3 (0 < y < 1).

[0069] In addition, as the material included in the second dielectric layer 111b, various ceramic additives, organic solvents, binders, dispersants, etc. can be added to particles such as barium titanate (BaTiO 3 ) according to the purpose of the present disclosure.

[0070] The thickness td2 of the second dielectric layer 111b does not need to be particularly limited.

[0071] However, in order to ensure the stable reliability of the multilayer electronic component 100 in a high-voltage environment, the thickness td2 of the second dielectric layer 111b can be less than or equal to 15 μm, and preferably, the thickness td2 of the second dielectric layer 111b can be less than or equal to 10 μm.

[0072] However, the present disclosure is not limited thereto, and in order to simultaneously achieve miniaturization and high capacitance in a super-small product, the thickness td2 of the second dielectric layer 111b can be less than or equal to 3.0 μm, preferably, less than or equal to 1.0 μm, and more preferably, less than or equal to 0.6 μm.

[0073] Here, the thickness td2 of the second dielectric layer 111b may refer to the thickness td2 of the second dielectric layer 111b disposed between the double inner electrodes 121b and 122b in the first direction.

[0074] In addition, the thickness td2 of the second dielectric layer 111b may refer to the dimension of the second dielectric layer 111b in the first direction. In addition, the thickness td2 of the second dielectric layer 111b may refer to the average thickness of the second dielectric layer 111b, and may refer to the average dimension of the second dielectric layer 111b in the first direction. For example, the average thickness td2 of the second dielectric layer 111b may refer to the average thickness of at least one dielectric layer in the second dielectric layer 111b.

[0075] In addition, in an exemplary embodiment of the present disclosure, the composition of the second dielectric layer 111b may be different from the composition of the first dielectric layer 111a.

[0076] The difference between the composition of the second dielectric layer 111b and the composition of the first dielectric layer 111a may represent a case where the ceramic materials are the same but at least one of the additives, organic solvents, binders, and dispersants is different or the added amount is different, or a case where the ceramic materials are different, but the present disclosure is not limited thereto.

[0077] Since the composition of the second dielectric layer 111b and the composition of the first dielectric layer 111a are different from each other, the first dielectric layer 111a forming the dielectric capacitance may improve the dielectric properties, and the second dielectric layer 111b on which the electric distortion stress is concentrated may improve the strength properties. By changing the composition of each dielectric layer, the structure and materials can be appropriately changed to meet the purpose of each dielectric layer.

[0078] In addition, when the number of pores P per 1 μm 2 included in the cross-section of the second dielectric layer 111b is referred to as B, and the number of pores P per 1 μm 2 included in the cross-section of the first dielectric layer 111a is referred to as A, B < A may be satisfied, and preferably, B < 0.25 × A may be satisfied.

[0079] For example, when the number of pores P per unit area is multiplied by 1000, at this time, the number of pores P per 1 μm 2 included in the cross-section of the second dielectric layer 111b × 1000 may be less than or equal to 5.00, that is, 1000 × B ≤ 5.00 may be satisfied.

[0080] Here, the cross-sections of the first dielectric layer 111a and the second dielectric layer 111b may refer to the cross-sections in the first direction and the second direction in the central portion of the main body 110 in the third direction, and the number of pores P may be measured using a program from an image captured in the corresponding cross-section by a scanning electron microscope (SEM), but the present disclosure is not limited thereto.

[0081] Since the number of pores P per 1 μm 2The number of pores P satisfies B < A, so the generation of cracks caused by the concentration of electric distortion stress can be included in the second dielectric layer 111b, such that the generation of cracks in the first dielectric layer 111a can be suppressed, thereby preventing the deterioration of dielectric properties.

[0082] Generally, the inner electrode is designed to improve the sintering characteristics of adjacent dielectric layers, thereby reducing the porosity and assisting grain growth. However, when the porosity in the dielectric layer decreases, due to the increase in sintering density, the sintering stress may increase, and there may be a risk of becoming vulnerable to the generation and propagation of cracks.

[0083] Therefore, the porosity of the second dielectric layer 111b that does not form a dielectric capacitor can be reduced to promote the generation and propagation of cracks, thereby suppressing the generation of cracks in the first dielectric layer 111a that forms a dielectric capacitor.

[0084] When the number B of pores P per 1 μm 2 in the cross-section of the second dielectric layer 111b and the number A of pores P per 1 μm 2 in the cross-section of the first dielectric layer 111a satisfy A ≤ B, since the force inducing the generation of cracks in the second dielectric layer 111b may decrease, there may be a risk of generating cracks in the first dielectric layer 111a, which may deteriorate the dielectric properties.

[0085] In an exemplary embodiment of the present disclosure, the average size td1 of the first dielectric layer 111a in the first direction may be larger than the average size td2 of the second dielectric layer 111b in the first direction. In other words, td2 < td1 can be satisfied.

[0086] More specifically, the average size td1 of the first dielectric layer 111a in the first direction may be 8 times or more the average size td2 of the second dielectric layer 111b in the first direction. In other words, 8 × td2 ≤ td1 can be satisfied.

[0087] When the average size td1 of the first dielectric layer 111a in the first direction is larger than the average size td2 of the second dielectric layer 111b in the first direction (td2 < td1), the amplitude of the voltage applied per unit thickness (1 μm) of the first dielectric layer 111a can be reduced, and even due to the stress concentration caused by the electric distortion effect, it is possible to prevent cracks from being easily generated.

[0088] When the average dimension td1 of the first dielectric layer 111a in the first direction is less than or equal to the average dimension td2 of the second dielectric layer 111b in the first direction (td1≤td2), the amplitude of the voltage applied per unit thickness (1 μm) of the first dielectric layer 111a may be increased, and there may be a risk of stress concentration caused by the electrical distortion effect to generate cracks in the first dielectric layer 111a, resulting in degradation of dielectric properties.

[0089] In addition, an average thickness td1 of at least one of the first dielectric layers 111a and an average thickness te1 of at least one of the plurality of single-layered internal electrodes 121a and 122a may satisfy 2×te1 <td1。

[0090] In other words, the average thickness td1 of one first dielectric layer 111a may be twice greater than the average thickness te1 of the single-layered internal electrodes 121a and 122a. Preferably, the average thickness td1 of the plurality of first dielectric layers 111a may be twice greater than the average thickness te1 of the plurality of single-layered internal electrodes 121a and 122a.

[0091] Generally, high voltage electronic components have major issues in reliability due to the reduction of breakdown voltage (BDV) under high voltage environment.

[0092] Therefore, in order to prevent the breakdown voltage (BDV) from being reduced under a high voltage environment, the average thickness td1 of the first dielectric layer 111a may be made greater than twice the average thickness te1 of the single-layer internal electrodes 121a and 122a, so that the thickness of the first dielectric layer 111a, which is the distance between the single-layer internal electrodes 121a and 122a and the floating electrode 123, may be increased, thereby improving the breakdown voltage (BDV) characteristics.

[0093] When the average thickness td1 of the first dielectric layer 111a is less than or equal to twice the average thickness te1 of the single-layered internal electrodes 121a and 122a, the average thickness of the first dielectric layer 111a, which is the average distance between the single-layered internal electrodes 121a and 122a and the floating electrode 123, may be thin, which may reduce the breakdown voltage and a short circuit may occur between the single-layered internal electrodes 121a and 122a and the floating electrode 123.

[0094] like Figure 4As shown, a multilayer electronic component 100 according to another exemplary embodiment of the present disclosure may include: a body 110 including a plurality of first dielectric layers 111a, internal electrodes 121 and 122, and a floating electrode 123, the internal electrodes 121 and 122 including first internal electrodes 121 and second internal electrodes 122 spaced apart from each other on the same first dielectric layer 111a, the floating electrode 123 and the internal electrodes 121 and 122 being alternately arranged in a first direction and the first dielectric layer 111a being interposed between the floating electrode 123 and the internal electrode 123. 121 and 122; and a first external electrode 131 and a second external electrode 132, which are arranged on the body 110 and are respectively connected to the first internal electrode 121 and the second internal electrode 122, and the body 110 may include a double floating electrode 123b, that is, the floating electrode 123 of the body 110 may include a double floating electrode 123b, and the double floating electrode 123b includes double-layer floating electrodes 123b-1 and 123b-2 arranged adjacent to each other in the first direction and with the second dielectric layer 111b interposed therebetween.

[0095] In the present disclosure, the description of the dual inner electrodes 121 b and 122 b may be equally applied to the dual floating electrode 123 b , and a redundant description will be omitted, but those skilled in the art will be able to easily understand the omitted description.

[0096] In another example embodiment of the present disclosure, the floating electrode 123 may include a single-layer floating electrode 123a and a double-layer floating electrode 123b in which double-layer floating electrodes 123b-1 and 123b-2 are disposed adjacent to each other in the first direction with the second dielectric layer 111b interposed therebetween.

[0097] Each of the double floating electrodes 123 b may be the same as the single-layer floating electrode 123 a except that the double floating electrode 123 b has a double-layer floating electrode structure.

[0098] More specifically, one dual floating electrode 123b may include dual first floating electrodes 123b-1 and dual second floating electrodes 123b-2, and may have a structure in which the dual first floating electrodes 123b-1 and the dual second floating electrodes 123b-2 are alternately arranged with the second dielectric layer 111b interposed therebetween.

[0099] In the present disclosure, the floating electrode 123 will be described as including the single-layer floating electrode 123a and the double-layer floating electrode 123b, and unless there are special circumstances, the description of the floating electrode 123 is equally applicable to the single-layer floating electrode 123a and the double-layer floating electrode 123b.

[0100] Since the body 110 includes the double floating electrodes 123 b, the region where stress is concentrated due to the electric distortion effect occurring under a high voltage environment can be dispersed to solve the electric distortion stress by preventing the concentration of the electric distortion stress and inducing crack generation in the second dielectric layer 111 b between the double floating electrodes 123 b that do not form a capacitor, thereby reducing the voltage applied per unit thickness (dimension in the first direction) of the first dielectric layer 111 a and improving the DC bias characteristics and the withstand voltage characteristics.

[0101] In this case, the double floating electrode 123b may be disposed in the central portion of the body 110 in the first direction, for example, when the body 110 is divided into three regions in the first direction, the double floating electrode 123b may be disposed in the second region between the first and third regions of the three regions.

[0102] The double floating electrodes 123 b may be disposed in a central portion of the body 110 in the first direction where the electrical distortion stress is most concentrated, so that the electrical distortion stress may be dispersed and a DC bias characteristic and a withstand voltage characteristic may be improved.

[0103] In an example embodiment of the present disclosure, the number of the double floating electrodes 123 b included in the body 110 may be one.

[0104] In other words, the body 110 may include a structure in which the single-layer inner electrodes 121a and 122a and the single-layer floating electrode 123a are alternately arranged in the first direction with the first dielectric layer 111a interposed therebetween in most regions, and may include one double floating electrode 123b having a structure in which a stacking order is (double first floating electrode 123b-1)-(second dielectric layer 111b)-(double second floating electrode 123b-2), that is, a structure including the double-layer floating electrodes 123b-1 and 123b-2 disposed adjacent to each other in the first direction with the second dielectric layer 111b disposed therebetween is disposed in a central region of the body 110 in the first direction.

[0105] In the multilayer electronic component 100 of the same size, by including only one double floating electrode 123 b , the DC bias voltage applied per unit thickness (1 μm) of the first dielectric layer 111 a may be further reduced.

[0106] Here, including only one double floating electrode 123 b may mean including a set of double-layered floating electrodes 123 b - 1 and 123 b - 2 .

[0107] As the number of double floating electrodes 123b increases, a large amount of sintering stress may be generated due to the difference in sintering characteristics between the second dielectric layer 111b and the first dielectric layer 111a, which may actually reduce the withstand voltage characteristics. In addition, the risk of cracks occurring in the first dielectric layer 111a may increase, resulting in an increased risk that the capacitance characteristics may deteriorate.

[0108] In addition, an average thickness td1 of at least one of the first dielectric layers 111a and an average thickness te3 of at least one of the floating electrodes 123 may satisfy 2×te3 <td1。

[0109] In other words, the average thickness td1 of one first dielectric layer 111a may be twice greater than the average thickness te3 of one floating electrode 123. Preferably, the average thickness td1 of the plurality of first dielectric layers 111a may be twice greater than the average thickness te3 of the plurality of floating electrodes 123.

[0110] Therefore, in order to prevent the breakdown voltage from being reduced under a high voltage environment, the average thickness td1 of the first dielectric layer 111a can be made greater than twice the average thickness te3 of the floating electrode 123, thereby increasing the thickness of the first dielectric layer 111a as the distance between the single-layer internal electrodes 121 and 122 and the floating electrode 123 and improving the breakdown voltage characteristics.

[0111] When the average thickness td1 of the first dielectric layer 111a is less than or equal to twice the average thickness te3 of the floating electrode 123, the average thickness of the first dielectric layer 111a, which is the average distance between the single-layer internal electrodes 121a and 122a and the floating electrode 123, may be thin, which may reduce the breakdown voltage and may cause a short circuit between the internal electrodes 121 and 122 and the floating electrode 123.

[0112] In addition, the body 110 may include covering portions 112 and 113 provided on both surfaces of the capacitance forming portion in the first direction.

[0113] Specifically, the covering portions 112 and 113 may include a first covering portion 112 disposed on one surface of the capacitor forming portion in the first direction and a second covering portion 113 disposed on another surface of the capacitor forming portion in the first direction, and more specifically, the covering portions 112 and 113 may include an upper covering portion 112 (i.e., the first covering portion 112) disposed above the capacitor forming portion in the first direction and a lower covering portion 113 (i.e., the second covering portion 113) disposed below the capacitor forming portion in the first direction.

[0114] The upper covering portion 112 and the lower covering portion 113 may be formed by stacking a single first dielectric layer 111a or two or more first dielectric layers 111a on the upper surface and the lower surface of the capacitor forming portion in the first direction, respectively, and may be mainly used to prevent damage to the internal electrodes 121 and 122 due to physical stress and / or chemical stress.

[0115] The upper cover 112 and the lower cover 113 do not include the internal electrodes 121 and 122, and may include the same material as the first dielectric layer 111a. That is, the upper cover 112 and the lower cover 113 may include a ceramic material, for example, may include barium titanate (BaTiO 3 ) based ceramic materials.

[0116] Furthermore, the thickness tc of the covering portions 112 and 113 does not need to be particularly limited.

[0117] However, to more easily achieve miniaturization and high capacitance of multilayer electronic component 100 , thickness tc of covers 112 and 113 may be 100 μm or less, preferably 30 μm or less, and more preferably 20 μm or less in ultra-small products.

[0118] Here, the thickness tc of the covers 112 and 113 may refer to the size of the covers 112 and 113 in the first direction. In addition, the thickness tc of the covers 112 and 113 may refer to the average thickness of the covers 112 and 113 and may refer to the average size of the covers 112 and 113 in the first direction.

[0119] The average size of the covering portions 112 and 113 in the first direction may be measured by an image obtained by scanning a cross section in the first direction and the second direction of the body 110 with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of the covering portions 112 and 113 in the first direction may refer to an average value calculated by measuring the size of the first direction at 30 points spaced apart from each other at equal intervals in the second direction of one covering portion in the scanned image.

[0120] In addition, the average size of the covering portion in the first direction measured by the above method is substantially the same as the average size of the covering portion in the first direction measured in the first and third direction cross sections of the body 110 .

[0121] In the exemplary embodiment of the present disclosure, a structure in which the multilayer electronic component 100 has two external electrodes 131 and 132 is described, but the number and shape of the external electrodes 131 and 132 may vary according to the shapes of the internal electrodes 121 and 122 or other purposes.

[0122] The external electrodes 131 and 132 may be disposed on the body 110 and connected to the internal electrodes 121 and 122 .

[0123] More specifically, the external electrodes 131 and 132 may include a first external electrode 131 and a second external electrode 132, which are respectively disposed on the third surface 3 and the fourth surface 4 of the body 110 and are respectively connected to the first internal electrode 121 and the second internal electrode 122. That is, the first external electrode 131 may be disposed on the third surface 3 of the body 110 and connected to the first internal electrode 121, and the second external electrode 132 may be disposed on the fourth surface 4 of the body 110 and connected to the second internal electrode 122.

[0124] However, the external electrodes 131 and 132 may not be connected to the floating electrode 123 .

[0125] In addition, the external electrodes 131 and 132 may be provided to extend to a portion of the first surface 1 and a portion of the second surface 2 of the body 110, and / or may be provided to partially extend to the fifth surface 5 and the sixth surface 6 of the body 110. That is, the first external electrode 131 may be provided on a portion of the first surface 1, a portion of the second surface 2, a portion of the fifth surface 5, and a portion of the sixth surface 6 of the body 110 and may be provided on the third surface 3 of the body 110, and the second external electrode 132 may be provided on a portion of the first surface 1, a portion of the second surface 2, a portion of the fifth surface 5, and a portion of the sixth surface 6 of the body 110 and may be provided on the fourth surface 4 of the body 110.

[0126] In addition, the external electrodes 131 and 132 may be formed using any material such as metal as long as they have conductivity, and specific materials may be determined in consideration of electrical properties, structural stability, etc., and may also have a multi-layered structure.

[0127] For example, the external electrodes 131 and 132 may each include at least one electrode layer 131a, 132a, 131b, and 132b disposed on the body 110 and plating layers 131c and 132c disposed on the at least one electrode layer 131a, 132a, 131b, and 132b.

[0128] For a more specific example of at least one electrode layer, at least one electrode layer may include first electrode layers 131a and 132a, which are sintered electrodes including a first conductive metal and glass, and second electrode layers 131b and 132b, which are resin-based electrodes including a second conductive metal and resin. The first external electrode 131 may include the first electrode layers 131a and 132a and the plating layer 131c, and the second external electrode 132 may include the second electrode layers 131b and 132b and the plating layer 132c.

[0129] Here, the first conductive metal may refer to a conductive metal included in the first electrode layers 131a and 132a, and the second conductive metal may refer to a conductive metal included in the second electrode layers 131b and 132b. In this case, the first conductive metal and the second conductive metal may be the same or different from each other and may include the same metal material, but the present disclosure is not limited thereto.

[0130] In addition, the electrode layers may be formed by sequentially forming first electrode layers 131 a and 132 a and second electrode layers 131 b and 132 b on the body 110 .

[0131] In addition, the first electrode layers 131a and 132a may be formed by transferring a sheet including a conductive metal onto the body 110, and the second electrode layers 131b and 132b may be formed by transferring a sheet including a conductive metal onto the first electrode layers 131a and 132a, respectively.

[0132] A material having excellent conductivity may be used as the first conductive metal and the second conductive metal included in the electrode layer. For example, the first conductive metal and the second conductive metal may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but the present disclosure is not limited thereto.

[0133] In an exemplary embodiment of the present disclosure, the electrode layer may have a double-layer structure including first electrode layers 131a and 132a and a double-layer structure including second electrode layers 131b and 132b, and thus, the first external electrode 131 may include: a first electrode layer 131a including a first conductive metal and glass; and a second electrode layer 131b disposed on the first electrode layer 131a and including a second conductive metal and a resin, and the second external electrode 132 may include: a first electrode layer 132a including a first conductive metal and glass; and a second electrode layer 132b disposed on the first electrode layer 132a and including a second conductive metal and a resin.

[0134] The first electrode layers 131 a and 132 a may serve to improve adhesion with the body 110 by including glass, and the second electrode layers 131 b and 132 b may serve to improve warping strength by including resin.

[0135] The first conductive metal used in the first electrode layers 131a and 132a is not particularly limited as long as the first conductive metal has a material that can be electrically connected to the internal electrodes 121 and 122 for forming a capacitor, and the first conductive metal may include, for example, one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. The first electrode layers 131a and 132a may be formed by coating a conductive paste prepared by adding glass frit to first conductive metal particles and then sintering the conductive paste.

[0136] The second conductive metal included in the second electrode layers 131 b and 132 b may serve to electrically connect to the first electrode layers 131 a and 132 a .

[0137] The second conductive metal included in the second electrode layers 131 b and 132 b is not particularly limited as long as the second conductive metal has a material that can be electrically connected to the first electrode layers 131 a and 132 a, and the second conductive metal may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0138] The second conductive metal included in the second electrode layers 131b and 132b may include one or more of spherical particles and flaky particles. That is, the second conductive metal may consist of only flaky particles, or only spherical particles, or may be a mixture of flaky particles and spherical particles. Here, the spherical particles may include a shape that is not completely spherical, for example, a shape in which the length ratio of the major axis to the minor axis (major axis / minor axis) is less than or equal to 1.45. Flaky particles may refer to particles having a flat and elongated shape, although the present disclosure is not limited thereto, but the length ratio of the major axis to the minor axis (major axis / minor axis) may be, for example, greater than or equal to 1.95. The length of the major axis and the length of the minor axis of the spherical particles and the flaky particles may be measured from an image obtained by scanning a cross section of the first direction and the second direction cut from the central portion of the multilayer electronic component in the third direction with a scanning electron microscope (SEM).

[0139] The resin included in the second electrode layers 131b and 132b may ensure adhesion and function as a shock absorber. The resin included in the second electrode layers 131b and 132b may have adhesion and shock absorption, and the resin is not particularly limited as long as it can be mixed with the second conductive metal particles to make a paste, and may include, for example, an epoxy-based resin.

[0140] In addition, the second electrode layers 131b and 132b may include a plurality of second conductive metal particles, an intermetallic compound, and a resin. The intermetallic compound may be included to further improve electrical connectivity with the first electrode layers 131a and 132a. The intermetallic compound may be used to improve electrical connectivity by connecting the plurality of second metal particles, and may be used to surround the plurality of second conductive metal particles and connect the second conductive metal particles to each other.

[0141] In this case, the intermetallic compound may include a metal having a melting point lower than the curing temperature of the resin and a high melting point metal having a melting point higher than the melting point of the metal. That is, the paste used to form the second electrode layers 131b and 132b includes metal particles having a melting point lower than the curing temperature of the resin and high melting point metal particles having a melting point higher than the melting point of the metal particles, and the metal particles having a melting point lower than the curing temperature of the resin melt during the drying and curing process and form an intermetallic compound with a portion of the high melting point metal particles to surround the remaining high melting point metal particles. In this case, the intermetallic compound may preferably include a low melting point metal having a melting point of 300°C or less.

[0142] For example, the intermetallic compound may include Sn having a melting point of 213° C. to 220° C. Sn particles may be included in the paste for forming the second electrode layers 131 b and 132 b, and during the drying and curing process, the Sn particles melt, and the melted Sn wets high melting point metal particles such as Ag, Ni, or Cu (included in the paste for forming the second electrode layers 131 b and 132 b) by capillary action and reacts with some of the Ag, Ni, and Cu metal particles to form an intermetallic compound such as Ag. 3 Sn、Ni 3 Sn 4 , Cu 6 Sn 5 and Cu 3 Sn. Ag, Ni, or Cu that has not participated in the reaction remains in the form of conductive metal particles (ie, forms a plurality of second conductive metal particles in the second electrode layers 131 b and 132 b ).

[0143] Therefore, the plurality of second conductive metal particles may include one or more of Ag, Ni, and Cu, and the intermetallic compound may include Ag. 3 Sn、Ni 3 Sn 4 , Cu6 Sn 5 and Cu 3 One or more of Sn.

[0144] The plating layers 131c and 132c may be used to improve mounting characteristics.

[0145] The type of the plating layers 131c and 132c is not particularly limited, and the plating layers 131c and 132c may be single-layered plating layers 131c and 132c including one or more of nickel (Ni), tin (Sn), palladium (Pd), and alloys thereof, or may be formed of a plurality of layers.

[0146] For a more specific example of the plating layers 131c and 132c, the plating layers 131c and 132c may be Ni plating layers or Sn plating layers, or may be a form in which a Ni plating layer and a Sn plating layer are sequentially formed on an electrode layer, or may be a form in which a Sn plating layer, a Ni plating layer, and a Sn plating layer are sequentially formed on an electrode layer. In addition, the plating layers 131c and 132c may include a plurality of Ni plating layers and / or a plurality of Sn plating layers.

[0147] The size of the multilayer electronic component 100 does not need to be particularly limited.

[0148] However, in order to achieve both miniaturization and high capacitance, the thickness of the dielectric layer and the internal electrode needs to be thinned to increase the number of stacks, and therefore, the effect according to the present disclosure may be more significant in a multilayer electronic component 100 having a size of 3216 (length×width: 3.2 mm×1.6 mm) or less.

[0149] Hereinafter, the present disclosure will be described in more detail through examples, but this is intended to help specific understanding of the present disclosure, and the scope of the present disclosure is not limited to the exemplary embodiments.

[0150] <Example Embodiment> Table 1 below shows that the number of pores included in the first dielectric layer or the second dielectric layer was measured in Comparative Examples 1 and 2 without the dual internal electrodes and Inventive Examples 1 and 2 with the dual internal electrodes.

[0151] In the case of Invention Examples 1 and 2 in which a dual internal electrode is applied, the composition of the first dielectric layer is the same as that of the second dielectric layer, and in the case of the second dielectric layer, the thickness of the second dielectric layer is made thinner than that of the first dielectric layer to improve the sintering characteristics under the same sintering conditions.

[0152] Comparative Examples 1 and 2 were manufactured with the same structure (meaning the same material and thickness) of the first dielectric layer and the internal electrodes as those of Inventive Examples 1 and 2 except for the presence or absence of the double internal electrodes.

[0153] Based on the cross-sections of the first direction and the second direction of the sintered body, an image of the central area of ​​the body in the first direction was captured using a scanning electron microscope (SEM), and the number of pores P observed in the captured image was measured and listed in Table 1, and the number of pores P per unit area was multiplied by 1000 and listed in Table 1.

[0154] also, Figure 5A is an image obtained by capturing a central area of ​​the subject in the first direction with a scanning electron microscope (SEM) in Comparative Example 2; and Figure 5B is an image obtained by capturing a central area of ​​a subject in a first direction with a scanning electron microscope (SEM) in Inventive Example 2.

[0155] (Table 1)

[0156] It can be seen that the number of pores per unit area of ​​the second dielectric layer of Inventive Example 1 using the double inner electrode × 1000 is 4.89 pores / μm 2 , which is less than 1 / 4 of the number of pores per unit area of ​​the first dielectric layer in Inventive Example 1×1000, that is, less than 21.25 pores / μm 2 1 / 4 of the number of pores per unit area of ​​the first dielectric layer in Comparative Example 1 in which the double inner electrode is not applied×1 / 4, that is, less than 20.85 pores / μm 2 1 / 4 of.

[0157] In addition, it can be seen that the number of pores per unit area of ​​the second dielectric layer of Inventive Example 2 applying the double inner electrode × 1000 is 4.28 pores / μm 2 , which is less than 1 / 4 of the number of pores per unit area of ​​the first dielectric layer in Inventive Example 2×1000, that is, less than 17.84 pores / μm 2 1 / 4 of the number of pores per unit area of ​​the first dielectric layer in Comparative Example 2 in which the double inner electrode is not applied×1000, that is, less than 17.87 pores / μm 2 1 / 4 of.

[0158] From this, it can be seen that the number of pores in the second dielectric layer is smaller than the number of pores in the first dielectric layer, and it can be predicted that cracks are more likely to form in the second dielectric layer than in the first dielectric layer, so it can be predicted that cracks can be prevented from being generated in the first dielectric layer and the dielectric properties will not be deteriorated.

[0159] Table 2 below shows values ​​obtained by measuring the dielectric capacitance change rate per unit thickness (1 μm) applied to the first dielectric layer according to the number of applied double inner electrodes when a voltage of 1000 V was applied.

[0160] Test Examples 1 to 4 correspond to sample sheets to which double internal electrodes are applied, and the thickness of the second dielectric layer interposed between the double internal electrodes is manufactured to be 10 μm.

[0161] (Table 2)

[0162] It can be seen that as the number of dual inner electrodes decreases from 19 in Test Example 1 to 13 in Test Example 2, 7 in Test Example 3, and 1 in Test Example 4, when the same external voltage (1000 V) is applied, the value of the DC bias voltage applied per unit thickness gradually decreases to 6.25 V / μm, 6.01 V / μm, 5.79 V / μm, and 5.59 V / μm, which can be predicted that the electrical distortion stress applied to the first dielectric layer will decrease.

[0163] In addition, it can be seen that from Test Example 1 to Test Example 4, the dielectric capacitance change rate is -34.9%, -32.9%, -31.2% and -29.5%, that is, the absolute value of the dielectric capacitance change rate gradually decreases, thereby improving the capacitance characteristics of the multilayer electronic component.

[0164] Next, the withstand voltage characteristics were measured by changing the number of double inner electrodes or the thickness of the second dielectric layer, and a sheet having a size of 3216 (length×width: 3.2 mm×1.6 mm) was manufactured.

[0165] The withstand voltage characteristics were evaluated based on the breakdown voltage (BDV), and it was evaluated that the higher the breakdown voltage (BDV) value was, the better the withstand voltage characteristics were.

[0166] In Test Example 5, the number of double inner electrodes was 9, the thickness of the second dielectric layer was manufactured to be 10 μm, and the breakdown voltage (BDV) was measured to be 5.816 kV.

[0167] In Test Example 6, the number of double inner electrodes was 5, the thickness of the second dielectric layer was manufactured to be 20 μm, and the breakdown voltage (BDV) was measured to be 5.834 kV.

[0168] In Test Example 7, the number of double inner electrodes was 5, the thickness of the second dielectric layer was manufactured to be 10 μm, and the breakdown voltage (BDV) was measured to be 6.153 kV.

[0169] In Test Example 8, the number of double inner electrodes was 1, the thickness of the second dielectric layer was manufactured to be 10 μm, and the breakdown voltage (BDV) was measured to be 6.753 kV.

[0170] When comparing Test Example 6 and Test Example 7, it was confirmed that the thinner the thickness of the second dielectric layer, the better the breakdown voltage (BDV) characteristics, which is expected as a result that the thinner the thickness of the second dielectric layer, the thicker the first dielectric layer in the same size sheet.

[0171] When comparing Test Example 5, Test Example 7, and Test Example 8, it was confirmed that the breakdown voltage (BDV) characteristics were excellent as the number of double inner electrodes decreased, which is expected as a result that the smaller the number of second dielectric layers in a sheet of the same size, the thicker the first dielectric layer.

[0172] Furthermore, the effect of applying the dual floating electrodes in example embodiments may be similar to the effect of applying the dual inner electrodes, and thus a detailed description thereof is omitted.

[0173] Although the exemplary embodiments of the present disclosure have been described in detail above, the present disclosure is not limited to the above embodiments and the accompanying drawings, and the scope of the present disclosure is defined by the appended claims. Therefore, those of ordinary skill in the art may make various substitutions, modifications or alterations without departing from the scope of the present disclosure defined by the appended claims, and these substitutions, modifications or alterations should be interpreted as being included within the scope of the present disclosure.

[0174] In addition, the expression "exemplary embodiment" used in the present disclosure does not mean the same embodiment, and is provided to emphasize and explain different unique characteristics. However, the embodiment presented above does not exclude the combination of features with another embodiment. For example, although a matter described in a specific embodiment is not described in another embodiment, unless there is a description opposite or contradictory to the matter in another embodiment, the matter can be understood as a description related to another embodiment.

[0175] In the present disclosure, the terms are only used to describe specific embodiments and are not intended to limit the present disclosure. Unless the context clearly indicates otherwise, a singular meaning may also include a plural meaning.

Claims

1. A multilayer electronic component comprising: a body including a plurality of first dielectric layers, inner electrodes and floating electrodes, the inner electrodes including first inner electrodes and second inner electrodes spaced apart from each other on the same first dielectric layer, the floating electrodes and the inner electrodes being alternately arranged in a first direction with the first dielectric layer interposed between the floating electrodes and the inner electrodes; and a first outer electrode and a second outer electrode, disposed on the body and connected to the first inner electrode and the second inner electrode, respectively; Wherein, the main body includes a double inner electrode including a double-layer inner electrode, the double-layer inner electrodes are arranged adjacent to each other in the first direction and the second dielectric layer is interposed between the double-layer inner electrodes.

2. The multilayer electronic component according to claim 1, wherein The dual inner electrodes are disposed in a central portion of the body in the first direction.

3. The multilayer electronic component according to claim 1, wherein: The number of the double inner electrode is one.

4. The multilayer electronic component according to claim 1, wherein: The second dielectric layer has a composition different from a composition of the first dielectric layer.

5. The multilayer electronic component according to claim 1, wherein In the cross section of the main body along the first direction, when each 1 μm 2 The number of pores is referred to as A and is included in every 1 μm of the second dielectric layer. 2 The number of pores is called B when B is satisfied <A。 6. The multilayer electronic component according to claim 1, wherein: In the cross section of the main body along the first direction, when each 1 μm 2 The number of pores is referred to as B when 1000×B≤5.00 is satisfied.

7. The multilayer electronic component according to claim 1, wherein: When the average size of the first dielectric layer in the first direction is referred to as td1 and the average size of the second dielectric layer in the first direction is referred to as td2, td2 is satisfied. <td1。 8. The multilayer electronic component according to claim 7, wherein: Satisfies 8×td2≤td1.

9. The multilayer electronic component according to claim 1, wherein: When the average size of the first dielectric layer in the first direction is referred to as td1 and the average size of at least one of the floating electrodes in the first direction is referred to as te3, 2×te3 is satisfied. <td1。 10. The multilayer electronic component according to claim 1, wherein The floating electrode partially overlaps the first and second internal electrodes in the first direction to form a capacitance.

11. The multilayer electronic component according to claim 1, wherein The double inner electrode comprises: dual first inner electrodes including dual first-first inner electrodes and dual first-second inner electrodes alternately arranged in the first direction with the second dielectric layer interposed therebetween; and double second inner electrodes, including double second-first inner electrodes and double second-second inner electrodes alternately arranged in the first direction with the second dielectric layer interposed therebetween, wherein the dual first-first inner electrodes and the dual second-first inner electrodes are spaced apart from each other in a second direction perpendicular to the first direction and are disposed on one surface of the second dielectric layer in the first direction, and The dual first-second internal electrode and the dual second-second internal electrode are spaced apart from each other in the second direction and are disposed on the other surface of the second dielectric layer in the first direction.

12. A multilayer electronic component comprising: a body including a plurality of first dielectric layers, inner electrodes and floating electrodes, the inner electrodes including first inner electrodes and second inner electrodes spaced apart from each other on the same first dielectric layer, the floating electrodes and the inner electrodes being alternately arranged in a first direction with the first dielectric layer interposed between the floating electrodes and the inner electrodes; and a first outer electrode and a second outer electrode, disposed on the body and connected to the first inner electrode and the second inner electrode, respectively; The main body includes a double floating electrode including a double floating electrode, the double floating electrodes are arranged adjacent to each other in the first direction and a second dielectric layer is interposed between the double floating electrodes.

13. The multilayer electronic component according to claim 12, wherein: The dual floating electrodes are disposed in a central portion of the body in the first direction.

14. The multilayer electronic component according to claim 12, wherein: The number of the double floating electrode is one.

15. The multilayer electronic component according to claim 12, wherein: The second dielectric layer has a composition different from a composition of the first dielectric layer.

16. The multilayer electronic component according to claim 12, wherein: In the cross section of the main body along the first direction, when each 1 μm 2 The number of pores is referred to as B and is included in every 1 μm of the first dielectric layer. 2 The number of pores is called A when B is satisfied <A。 17. The multilayer electronic component according to claim 12, wherein: In the cross section of the main body along the first direction, when each 1 μm 2 The number of pores is referred to as B when 1000×B≤5.00 is satisfied.

18. The multilayer electronic component according to claim 12, wherein: When the average size of the first dielectric layer in the first direction is referred to as td1 and the average size of the second dielectric layer in the first direction is referred to as td2, td2 is satisfied. <td1。 19. The multilayer electronic component according to claim 18, wherein: Satisfies 8×td2≤td1.

20. The multilayer electronic assembly of claim 12, wherein: The floating electrode partially overlaps the first and second internal electrodes in the first direction to form a capacitance.

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