Multilayer electronic component and dielectric material

Abstract

The present disclosure provides a multilayer electronic component and a dielectric material, the multilayer electronic component including: a body including a dielectric layer and an internal electrode; and an external electrode disposed on the main body, in which the dielectric layer includes titanium (Ti), an acceptor element including vanadium (V), and a donor element including a rare earth element, and in which when the number of moles of the acceptor element per 100 moles of titanium (Ti) is defined as Am, the number of moles of the donor element per 100 moles of titanium (Ti) is defined as Dm, and the number of moles of the donor element per 100 moles of titanium (Ti) is defined as Dm, the number of moles of the acceptor element per 100 moles of titanium (Ti) is defined as Dm. And when the number of moles of vanadium (V) per 100 moles of titanium (Ti) is defined as Vm, 1.2 < = Dm / Am < = 1.4 and 0.2 < = Vm / Dm are satisfied.

Description

[0001] This application claims the benefit of priority from Korean Patent Application No. 10-2023-0162208 filed on November 21, 2023 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference. Technical Field

[0002] The present disclosure relates to a multilayer electronic component and a dielectric material. Background Art

[0003] Multilayer ceramic capacitors (MLCC, a type of multilayer electronic component) may be chip capacitors mounted on and charged or discharged from printed circuit boards of various electronic products including image display devices such as liquid crystal displays (LCDs) and plasma display panels (PDPs), computers, smart phones, mobile phones, and the like.

[0004] Since multilayer ceramic capacitors can have a small size and high capacitance and can be easily mounted, such multilayer ceramic capacitors can be used as components of various electronic devices. As various electronic devices such as computers and mobile devices have been designed to have smaller sizes and higher outputs, the demand for miniaturization and higher capacitance of multilayer ceramic capacitors has increased.

[0005] The "deterioration" mechanism directly related to the demanding reliability of multilayer ceramic capacitors may be affected by the movement of oxygen vacancies. In order to prevent degradation, research has been actively conducted to prevent insulation resistance degradation in high temperature environments by reducing the concentration of oxygen vacancies. In order to reduce insulation resistance degradation, the reliability of multilayer ceramic capacitors can be improved by realizing a microstructure such as core-shell structured grains including a predetermined percentage of rare earth elements. When rare earth elements are added excessively, the temperature characteristics (TCC characteristics) of multilayer ceramic capacitors may deteriorate, and therefore, rare earth elements may need to be added in an appropriate content. Summary of the invention

[0006] An embodiment of the present disclosure is to provide a multilayer electronic component satisfying X5R characteristics (TCC characteristics).

[0007] Embodiments of the present disclosure are directed to providing a multilayer electronic component with improved reliability.

[0008] According to an embodiment of the present disclosure, a multilayer electronic component includes: a main body including a dielectric layer and an inner electrode; and an outer electrode disposed on the main body, wherein the dielectric layer includes titanium (Ti), an acceptor element including vanadium (V), and a donor element including a rare earth element, and wherein, when the number of moles of the acceptor element per 100 moles of titanium (Ti) is defined as Am, the number of moles of the donor element per 100 moles of titanium (Ti) is defined as Dm, and the number of moles of vanadium (V) per 100 moles of titanium (Ti) is defined as Vm, it satisfies: 1.2≤Dm / Am≤1.4 and 0.2≤Vm / Dm. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The above and other aspects, features and advantages of the present disclosure will be more clearly understood through the following detailed description in conjunction with the accompanying drawings, in which: Figure 1 is a perspective view showing a multilayer electronic component according to an embodiment of the present disclosure; Figure 2 is an exploded perspective view showing a stacked structure of a main body according to an embodiment of the present disclosure; Figure 3 is along Figure 1 A cross-sectional view taken along line II' in FIG. Figure 4 is along Figure 1 A cross-sectional view taken along line II-II'; Figure 5 It is shown Figure 3 An enlarged view of the area P in FIG. Fig. 6A is a graph of reliability evaluation (Highly Accelerated Life Test (HALT)) of an example; Figure 6B is a graph of reliability evaluation (highly accelerated life test (HALT)) of a comparative example; Figure 6C is a graph showing TCC characteristics of an example and a comparative example; Fig. 7A is an image of dysprosium (Dy) in a cross section of a dielectric layer of a comparative example observed by using TEM-EDS; Figure 7B is an image of dysprosium (Dy) in a cross section of a dielectric layer of another comparative example observed by using TEM-EDS; and Figure 7C is an image of dysprosium (Dy) in a cross section of a dielectric layer of an example observed by using TEM-EDS. DETAILED DESCRIPTION

[0010] Hereinafter, embodiments of the present disclosure will be described as follows with reference to the accompanying drawings.

[0011] These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It will be understood that the various embodiments of the present invention, although different, are not necessarily mutually exclusive. For example, without departing from the spirit and scope of the present disclosure, the structure, shape and size described as an example in one embodiment of the present disclosure may be implemented in another embodiment. In addition, without departing from the spirit and scope of the present disclosure, the position or arrangement of the elements in the embodiment may be modified. Therefore, the following detailed description should not be regarded as having a limiting meaning, and the scope of the present disclosure is limited only by the attached claims properly interpreted and the full scope of equivalent schemes given by the claims.

[0012] In the accompanying drawings, the same elements will be represented by the same reference numerals. In addition, redundant descriptions and detailed descriptions of known functions and elements that may unnecessarily obscure the main purpose of the present disclosure will be omitted. In the accompanying drawings, some elements may be exaggerated, omitted or briefly shown, and the size of the elements does not necessarily reflect the actual size of these elements. The terms "comprising", "including", "constructed to", etc. of the description are used to indicate the presence of features, quantities, steps, operations, elements, parts or combinations thereof, and do not exclude the possibility of combining or adding one or more features, quantities, steps, operations, elements, parts or combinations thereof.

[0013] In the drawings, a first direction may be defined as a stacking direction or a thickness direction, a second direction may be defined as a length direction, and a third direction may be defined as a width direction.

[0014] Multilayer electronic components Figure 1 is a perspective view showing a multilayer electronic component according to an embodiment.

[0015] Figure 2 is an exploded perspective view showing a stacked structure of a main body according to an embodiment.

[0016] Figure 3 is along Figure 1 A cross-sectional view taken along line II' in FIG.

[0017] Figure 4 is along Figure 1 A cross-sectional view taken along line II-II'.

[0018] Figure 5 It is shown Figure 3 Magnified view of area P in FIG.

[0019] Below, we will refer to Figures 1 to 5A multilayer electronic component according to an embodiment is described in more detail. A multilayer ceramic capacitor will be described as an example of a multilayer electronic component, but the embodiment is not limited thereto, and the concept of the present disclosure may also be applied to various other electronic components such as an inductor, a piezoelectric element, a varistor, or a thermistor.

[0020] According to an embodiment, a multilayer electronic component 100 may include: a body 110 including a dielectric layer 111 and internal electrodes 121 and 122; and external electrodes 131 and 132 disposed on the body 110, wherein the dielectric layer may include an acceptor element, a donor element, and titanium (Ti), the acceptor element includes vanadium (V), the donor element includes a rare earth element, and when the number of moles of the acceptor element per 100 moles of titanium (Ti) is defined as Am, the number of moles of the donor element per 100 moles of titanium (Ti) is defined as Dm, and the number of moles of vanadium (V) per 100 moles of titanium (Ti) is defined as Vm, it may satisfy: 1.2≤Dm / Am≤1.4 and 0.2≤Vm / Dm.

[0021] The body 110 may have dielectric layers 111 and internal electrodes 121 and 122 that are alternately stacked.

[0022] More specifically, the body 110 may include a capacitor forming portion Ac, which is arranged in the body 110 and forms a capacitor, and the capacitor forming portion Ac includes a first internal electrode 121 and a second internal electrode 122 and a dielectric layer 111, and the first internal electrodes 121 and the second internal electrodes 122 are alternately arranged to face each other with the dielectric layer 111 interposed between the first internal electrodes 121 and the second internal electrodes 122.

[0023] The shape of the body 110 may not be limited to any particular shape, but Figure 1 As shown in FIG, the body 110 may have a hexahedral shape or a shape similar to a hexahedral shape. Due to shrinkage of ceramic powder included in the body 110 during a firing process, the body 110 may not have a precise hexahedral shape formed by straight lines but may have a substantially hexahedral shape.

[0024] The body 110 may have a first surface 1 and a second surface 2 opposite to each other in a first direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and opposite to each other in the second direction, and a fifth surface 5 and a sixth surface 6 connected to the first surface 1, the second surface 2, the third surface 3 and the fourth surface 4 and opposite to each other in a third direction.

[0025] The plurality of dielectric layers 111 forming the body 110 may be in a fired state, and adjacent dielectric layers 111 may be integrated with each other such that it may be difficult to identify boundaries between adjacent dielectric layers 111 without using a scanning electron microscope (SEM).

[0026] The raw material for forming the dielectric layer 111 is not limited as long as sufficient capacitance can be obtained, and generally, perovskite (ABO 3 ) materials can be used, and for example, barium titanate-based materials, lead composite perovskite materials, and / or strontium titanate materials can be used. The barium titanate-based materials may include BaTiO 3 -based ceramic particles, and examples of the ceramic powder may include BaTiO 3 as well as (Ba 3 in which Ca (calcium) and Zr (zirconium) are partially solid-solved in BaTiO 1-x Ca x )TiO 3 (0 < x < 1), Ba(Ti 1-y Ca y )O 3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O 3 (0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y )O 3 (0 < y < 1).

[0027] For the raw material for forming the dielectric layer 111, various ceramic additives, organic solvents, binders, dispersants, etc. can be added.

[0028] The dielectrics of currently used high-capacitance BME MLCCs (base metal electrode multilayer ceramic capacitors) (such as BME MLCCs that meet the X5R, X7R, X8R, and Y5V characteristics) may include materials obtained by: combining fixed-valence acceptor elements (such as Mg and Al) and rare-earth elements acting as donors (such as Y, Dy, Ho, and Er) with BaTiO 3 -based materials or other matrix materials (such as (Ba 3 obtained by solid-solubilizing Ca and / or Zr in BaTiO 1-x Ca x )(Ti 1-y Ca y )O 3 (0 < x < 1, 0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O 3 (0 < x < 1, 0 < y < 1), Ba(Ti 1-y Zr y )O 3co-doping (0 < y < 1)), further adding variable valence acceptor elements (such as, Mn, V, Cr, additional Ba) and SiO 2 or a sintering aid containing SiO 2 and sintering the material. When fired in a reducing atmosphere, in order to achieve the nominal capacitance and insulation characteristics of a high-capacitance MLCC, it may be necessary to achieve grain growth inhibition and resistance reduction, and it is known that these two effects can be achieved by adding an appropriate amount of fixed valence acceptor elements (such as Mg). However, when only fixed valence acceptor elements (such as Mg) are added, the breakdown voltage characteristics and reliability of the dielectric may be poor, and by adding both transition metal elements (e.g., variable valence acceptor elements such as Mn and V) and rare earth elements, the improvement effect of the breakdown voltage characteristics and reliability can be enhanced. Most elements can be co-doped and can be solid-soluted in the shell region of the grains of the BaTiO 3 -based material with a core-shell structure, so that stable capacitance characteristics and reliability depending on the temperature of the multilayer electronic component can be achieved.

[0029] In the multilayer electronic component 100 according to the embodiment, the dielectric layer 111 may include an acceptor element, a donor element, and titanium (Ti). The acceptor element includes vanadium (V), the donor element includes a rare earth element, and when the number of moles of the acceptor element per 100 moles of titanium (Ti) is defined as Am, the number of moles of the donor element per 100 moles of titanium (Ti) is defined as Dm, and the number of moles of vanadium (V) per 100 moles of titanium (Ti) is defined as Vm, the following can be satisfied: 1.2 ≤ Dm / Am ≤ 1.4 and 0.2 ≤ Vm / Dm.

[0030] Here, the rare earth element used as the donor element may include at least one of dysprosium (Dy), terbium (Tb), yttrium (Y), holmium (Ho), erbium (Er), gadolinium (Gd), cerium (Ce), neodymium (Nd), samarium (Sm), and thulium (Tm), preferably includes at least one of dysprosium (Dy) and terbium (Tb), and more preferably may be at least one of dysprosium (Dy) and terbium (Tb).

[0031] The rare earth element can inhibit the movement of oxygen vacancies, and by inhibiting the movement of oxygen vacancies, the deterioration of the insulation resistance can be prevented, so that the reliability can be improved.

[0032] In addition, the acceptor element may include vanadium (V), and may also include at least one of magnesium (Mg), aluminum (Al), manganese (Mn), chromium (Cr), iron (Fe), nickel (Ni), cobalt (Co), copper (Cu), and zinc (Zn), preferably includes at least one of magnesium (Mg), aluminum (Al), and manganese (Mn), and more preferably may be at least one of magnesium (Mg), aluminum (Al), and manganese (Mn).

[0033] The acceptor element can provide antioxidation property, and vanadium (V) in the acceptor element can effectively meet the X5R property.

[0034] Since the number of moles Dm of the donor element, the number of moles Am of the acceptor element, and the number of moles Vm of vanadium (V) per 100 moles of titanium (Ti) contained in the dielectric layer 111 satisfy 1.2 ≤ Dm / Am ≤ 1.4 and 0.2 ≤ Vm / Dm, the X5R property can be satisfied (the capacitance change rate in the temperature range from -55°C to 85°C is greater than or equal to -15% and less than or equal to +15% compared with the capacitance at 25°C), or the reliability of the multilayer electronic component can be improved.

[0035] When the Dm / Am ratio is less than 1.2 (Dm / Am < 1.2), the reliability may deteriorate, and when the Dm / Am ratio is greater than 1.4, the X5R property may not be satisfied.

[0036] In addition, when the Vm / Dm ratio is less than 0.2, the reliability may deteriorate. To meet the reliability or the X5R property, the upper limit of Vm / Dm is not limited to any specific example, and the number of moles Vm of vanadium (V) per 100 moles of titanium (Ti) contained in the dielectric layer 111 can satisfy the condition of being greater than 0 mole and less than or equal to 1.0 mole, that is, 0 mole < Vm ≤ 1.0 mole.

[0037] In this case, when the number of moles Vm of vanadium (V) exceeds 1.0 mole, the reliability may decrease.

[0038] The dielectric layer 111 according to the embodiment may include dielectric grains 10 having a core-shell structure, and the area fraction of the core 11 with respect to the area of the dielectric grains 10 having a core-shell structure may be greater than or equal to 60% (that is, in the dielectric grains 10 having a core-shell structure, the ratio of the area of the core 11 to the total area of the dielectric grains 10 having a core-shell structure may be greater than or equal to 60%).

[0039] To improve the reliability, the upper limit value of the area fraction of the core 11 is not limited to any specific example, and the area fraction of the core 11 may be less than or equal to 95%, less than or equal to 90%, or less than or equal to 85%, and to obtain improved capacitance characteristics, the area fraction of the core 11 may be less than or equal to 80%.

[0040] In the embodiment, the dielectric layer 111 may include a plurality of dielectric grains, and the plurality of dielectric grains may include dielectric grains 10 having a core-shell structure and dielectric grains 20 not having a core-shell structure.

[0041] In addition, the dielectric grain 10 having a core-shell structure may have a structure including a core 11 on the inner side and a shell 12 surrounding the core 11, wherein the core 11 may indicate a region in which a rare earth element is not detected, for example, may indicate a region in which the atomic percentage of the rare earth element is 0 at %. In addition, the shell 12 may indicate a region in which the atomic percentage of the rare earth element is, for example, greater than 0 at % and less than or equal to 0.5 at %.

[0042] As an example of a specific method of measuring the content of each element included in the dielectric layer 111 or the dielectric grains, in the case of a destructive method, a measuring device such as a scanning electron microscope-energy dispersive spectroscopy (SEM-EDS), a transmission electron microscope-energy dispersive spectroscopy (TEM-EDS), or a scanning transmission electron microscope-energy dispersive spectroscopy (STEM-EDS) can be used to analyze the components of the dielectric layer in the central part of the multilayer electronic component. First, a focused ion beam (FIB) device can be used to prepare a thin-sectioned analysis sample in an area including a dielectric microstructure (such as a dielectric grain in a cross section of a sintered dielectric material). Thereafter, a damaged layer on the surface of the thinned sample can be removed using xenon (Xe) or argon (Ar) ion milling, and a qualitative / quantitative analysis can be performed by mapping each component to be measured in an image obtained using SEM-EDS, TEM-EDS, or STEM-EDS. In this case, the qualitative / quantitative analysis graph of each component can be expressed in terms of weight percentage (wt%), atomic percentage (at%), or molar percentage (mol%) of each element.

[0043] As another method, the multilayer electronic component may be pulverized, the internal electrodes may be removed, a dielectric layer portion may be selected, and the composition of the dielectric layer may be analyzed using devices such as inductively coupled plasma optical spectroscopy (ICP-OES) and inductively coupled plasma mass spectrometry (ICP-MS).

[0044] When the area fraction of the core 11 relative to the area of ​​the dielectric grain 10 having the core-shell structure satisfies 60% or more, the target dielectric characteristics can be met, the X5R characteristics can be met, and the reliability of the multilayer electronic component can be improved.

[0045] When the area fraction of the core 11 with respect to the area of ​​the dielectric grain 10 having the core-shell structure is less than 60%, it may be difficult to achieve target dielectric characteristics or to satisfy X5R characteristics.

[0046] The method for calculating the area fraction of the core 11 relative to the area of ​​the dielectric grain 10 having a core-shell structure is not limited to any specific example, and can be calculated as follows. For example, an image of a cross section of the dielectric layer can be obtained using a SEM, TEM, or STEM measuring device, and each component can be observed in EDS mode. In this case, each component can be observed so that the total number of pixels can be greater than or equal to 100,000, and when a pixel in which the content of the rare earth element is 0 at% is defined as a core, and a pixel in which the content of the rare earth element is greater than 0 at% and less than or equal to 0.5 at% is defined as a shell, the ratio of the number of pixels in which the content of the rare earth element is 0 at% relative to the total number of pixels can be calculated, which can be defined as the area fraction of the core relative to the area of ​​the dielectric grain of the core-shell structure.

[0047] The number of pixels in which the rare earth element content is 0 at % in the area other than the core is negligible, but when the number of pixels in which the rare earth element content is 0 at % in the area other than the core increases, the area fraction of the core can be obtained by selecting only pixels arranged in the grains of the core-shell structure or in the central part of the grains of the core-shell structure from among the pixels in which the rare earth element content is 0 at % in the area other than the core.

[0048] The thickness td of the dielectric layer 111 may not be limited to any specific example.

[0049] However, in order to ensure the reliability of the multilayer electronic component 100 in a high voltage environment, the thickness of the dielectric layer 111 may be 10.0 μm or less. In addition, in order to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness of the dielectric layer 111 may be 3.0 μm or less. In order to easily achieve ultra-miniaturization and high capacitance, the thickness of the dielectric layer 111 may be 1.0 μm or less, preferably 0.6 μm or less, and more preferably 0.4 μm or less.

[0050] Here, the thickness td of the dielectric layer 111 may indicate a thickness td of at least one dielectric layer among the plurality of dielectric layers 111 .

[0051] In addition, the thickness td of the dielectric layer 111 may indicate a thickness td of the dielectric layer 111 disposed between the first and second internal electrodes 121 and 122 .

[0052] The thickness td of the dielectric layer 111 may refer to a size of the dielectric layer 111 in the first direction. In addition, the thickness td of the dielectric layer 111 may refer to an average thickness td of the dielectric layer 111 and may refer to an average size of the dielectric layer 111 in the first direction.

[0053] The average size of the dielectric layer 111 in the first direction may be measured by scanning a cross section of the body 110 in the first direction and the second direction using a scanning electron microscope (SEM) with a magnification of 10000 to obtain a scanned image. More specifically, the average size of the dielectric layer 111 in the first direction may refer to an average value calculated by measuring the size of the dielectric layer 111 in the first direction at 10 points at equal distances in the second direction in the scanned image. The 10 points at equal distances may be specified in the capacitor forming portion Ac. In addition, by extending the measurement of the average value to 10 dielectric layers 111, the average size of the dielectric layer 111 in the first direction may be further generalized.

[0054] The internal electrodes 121 and 122 may be alternately stacked with the dielectric layers 111 .

[0055] The internal electrodes 121 and 122 may include a first internal electrode 121 and a second internal electrode 122, and the first internal electrode 121 and the second internal electrode 122 may be alternately arranged to face each other, wherein the dielectric layer 111 included in the body 110 is interposed between the first internal electrode 121 and the second internal electrode 122, and the first internal electrode 121 and the second internal electrode 122 may be exposed to the third surface 3 and the fourth surface 4 of the body 110, respectively.

[0056] More specifically, the first inner electrode 121 may be spaced apart from the fourth surface 4 and may be exposed through the third surface 3, and the second inner electrode 122 may be spaced apart from the third surface 3 and may be exposed through the fourth surface 4. The first outer electrode 131 may be disposed on the third surface 3 of the body 110 and may be connected to the first inner electrode 121, and the second outer electrode 132 may be disposed on the fourth surface 4 of the body 110 and may be connected to the second inner electrode 122.

[0057] That is, the first internal electrode 121 may not be connected to the second external electrode 132 and may be connected to the first external electrode 131, and the second internal electrode 122 may not be connected to the first external electrode 131 and may be connected to the second external electrode 132. In this case, the first internal electrode 121 and the second internal electrode 122 may be electrically separated from each other by the dielectric layer 111 disposed therebetween.

[0058] The body 110 may be formed by alternately stacking ceramic green sheets on which the conductive paste for the first internal electrode 121 is printed and ceramic green sheets on which the conductive paste for the second internal electrode 122 is printed, and firing the ceramic green sheets.

[0059] The material for forming the internal electrodes 121 and 122 is not limited to any specific example, and a material having excellent conductivity may be used. For example, the internal electrodes 121 and 122 may include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0060] In addition, the internal electrodes 121 and 122 may be formed by printing a conductive paste for internal electrodes including one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof on a ceramic green sheet. A screen printing method or a gravure printing method may be used as a method of printing the conductive paste for internal electrodes, but embodiments thereof are not limited thereto.

[0061] The thickness te of the internal electrodes 121 and 122 may not be limited to any specific example.

[0062] However, in order to ensure the reliability of the multilayer electronic component 100 under a high voltage environment, the thickness te of the internal electrodes 121 and 122 may be less than or equal to 3.0 μm. In addition, in order to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness of the internal electrodes 121 and 122 may be less than or equal to 1.0 μm. In order to easily achieve ultra-miniaturization and high capacitance, the thickness of the internal electrodes 121 and 122 may be less than or equal to 0.6 μm, and more preferably less than or equal to 0.4 μm.

[0063] Here, the thickness te of the internal electrodes 121 and 122 may indicate a thickness te of at least one internal electrode among the plurality of internal electrodes 121 and 122 .

[0064] In addition, the thickness te of the internal electrodes 121 and 122 may indicate the size of the internal electrodes 121 and 122 in the first direction. In addition, the thickness te of the internal electrodes 121 and 122 may indicate the average thickness te of the internal electrodes 121 and 122 and may indicate the average size of the internal electrodes 121 and 122 in the first direction.

[0065] The average size of the internal electrodes 121 and 122 in the first direction may be measured by scanning a cross section in the first direction and the second direction of the body 110 using a scanning electron microscope (SEM) with a magnification of 10000 to obtain a scanned image. More specifically, the average size of the internal electrodes 121 and 122 in the first direction may refer to an average value calculated by measuring the size of the internal electrodes 121 and 122 in the first direction at 10 points at equal distances in the second direction in the scanned image. The 10 points at equal distances may be specified in the capacitance forming portion Ac. In addition, by extending the measurement of the average value to 10 internal electrodes 121 and 122, the average size of the internal electrodes 121 and 122 in the first direction may be further generalized.

[0066] In an embodiment, an average thickness td of at least one dielectric layer among the plurality of dielectric layers 111 and an average thickness te of at least one internal electrode among the plurality of internal electrodes 121 and 122 may satisfy: 2×te <td。

[0067] In other words, the average thickness td of the dielectric layer 111 may be greater than twice the average thickness te of one of the internal electrodes 121 and 122. Preferably, the average thickness td of the plurality of dielectric layers 111 may be greater than twice the average thickness te of the plurality of internal electrodes 121 and 122.

[0068] Generally, high voltage electronic components may have problems in reliability due to a decrease in breakdown voltage (BDV) under a high voltage environment.

[0069] Therefore, in order to prevent the breakdown voltage from decreasing under a high voltage environment, by constructing the average thickness td of the dielectric layer 111 to be greater than twice the average thickness te of the internal electrodes 121 and 122, the thickness of the dielectric layer (i.e., the distance between the internal electrodes) can be increased, and the breakdown voltage characteristics can be improved.

[0070] When the average thickness td of the dielectric layer 111 is less than or equal to twice the average thickness te of the internal electrodes 121 and 122 , the average thickness of the dielectric layer as the distance between the internal electrodes may decrease so that the breakdown voltage may be reduced and a short circuit may occur between the internal electrodes.

[0071] The body 110 may include cover parts 112 and 113 disposed on both surfaces of the capacitance forming part Ac in the first direction.

[0072] More specifically, the body 110 may include an upper cover portion 112 disposed on one surface in the first direction of the capacitance forming portion Ac and a lower cover portion 113 disposed on the other surface in the first direction of the capacitance forming portion Ac. More specifically, the body 110 may include an upper cover portion 112 disposed at an upper portion in the first direction of the capacitance forming portion Ac and a lower cover portion 113 disposed at a lower portion in the first direction of the capacitance forming portion Ac.

[0073] The upper cover 112 and the lower cover 113 may be formed by stacking a single dielectric layer or two or more dielectric layers on the upper and lower surfaces of the capacitance forming part Ac in the first direction, and may prevent damage to the internal electrodes 121 and 122 due to physical stress and / or chemical stress.

[0074] The upper cover 112 and the lower cover 113 do not include the internal electrodes 121 and 122, and may include the same material as that of the dielectric layer 111. That is, the upper cover 112 and the lower cover 113 may include a ceramic material, for example, barium titanate (BaTiO 3 ) based ceramic materials.

[0075] The thickness tc of the covering parts 112 and 113 may not be limited to any specific example.

[0076] However, in order to easily realize miniaturization and high capacitance of multilayer electronic components, the thickness tc of covers 112 and 113 may be 100 μm or less, preferably 30 μm or less. More preferably, in ultra-small products, the thickness tc of covers 112 and 113 may be 20 μm or less.

[0077] Here, the thickness tc of the covers 112 and 113 may refer to the size of the covers 112 and 113 in the first direction. In addition, the thickness tc of the covers 112 and 113 may refer to the average thickness tc of the covers 112 and 113 and may refer to the average size of the covers 112 and 113 in the first direction.

[0078] The average size of the covering portions 112 and 113 in the first direction may be measured by a scanned image obtained by scanning a cross section in the first direction and the second direction of the body 110 using a scanning electron microscope (SEM) at a magnification of 10000. More specifically, the average size of the covering portions 112 and 113 in the first direction may refer to an average value calculated by measuring the sizes of the covering portions 112 and 113 in the first direction at 10 points at equal distances in the second direction in the scanned image of the covering portions.

[0079] In addition, the average size of the covering portion in the first direction measured by the above method may be substantially the same as the average size of the covering portion in the first direction in cross sections of the body 110 in the first and third directions.

[0080] The multilayer electronic component 100 may include side edge portions 114 and 115 disposed on both side surfaces in the third direction of the capacitance forming portion Ac.

[0081] More specifically, the side edge portions 114 and 115 may include a first side edge portion 114 disposed on one side surface in the third direction of the capacitance forming portion Ac and a second side edge portion 115 disposed on the other side surface in the third direction of the capacitance forming portion Ac.

[0082] like Figure 4 As shown in , the side edge portions 114 and 115 may refer to: the area between the two ends of the fifth surface 5 and the sixth surface 6 of the main body 110 respectively exposed in the third direction of the first internal electrode 121 and the second internal electrode 122 and the corresponding outer surface of the main body 110 relative to the cross-section in the first direction and the third direction of the main body 110.

[0083] The side margin portions 114 and 115 may be formed by forming the internal electrodes 121 and 122 by coating a conductive paste on a region of the ceramic green sheet except for a region where the side margin portions 114 and 115 are formed. In addition, in order to prevent a step difference caused by the internal electrodes 121 and 122, the side margin portions 114 and 115 may be formed by cutting the laminated internal electrodes 121 and 122 to expose both side surfaces of the capacitance forming portion Ac in the third direction, and laminating a single dielectric layer or two or more dielectric layers along the third direction on both side surfaces of the capacitance forming portion Ac in the third direction.

[0084] The side margin parts 114 and 115 may prevent damage of the internal electrodes 121 and 122 due to physical stress and / or chemical stress.

[0085] The first side margin portion 114 and the second side margin portion 115 do not include the internal electrodes 121 and 122, and may include the same material as that of the dielectric layer 111. That is, the first side margin portion 114 and the second side margin portion 115 may include a ceramic material, for example, barium titanate (BaTiO 3 ) based ceramic materials.

[0086] The width wm of the first side margin portion 114 and the second side margin portion 115 may not be limited to any specific example.

[0087] However, in order to easily realize miniaturization and high capacitance of the multilayer electronic component 100 , the width wm of the side edge portions 114 and 115 may be 100 μm or less, preferably 30 μm or less, and more preferably 20 μm or less in ultra-small products.

[0088] Here, the width wm of the side margin portions 114 and 115 may refer to the size of the side margin portions 114 and 115 in the third direction. In addition, the width wm of the side margin portions 114 and 115 may refer to the average width wm of the side margin portions 114 and 115 and the average size of the side margin portions 114 and 115 in the third direction.

[0089] The average size of the side edge portions 114 and 115 in the third direction may be measured by a scanned image obtained by scanning the cross sections of the body 110 in the first direction and the third direction using a scanning electron microscope (SEM) with a magnification of 10000. More specifically, the average size of the side edge portions 114 and 115 in the third direction may be an average value calculated by measuring the sizes of the side edge portions 114 and 115 in the third direction at 10 points at equal distances in the first direction in the scanned image of one side edge portion.

[0090] In an embodiment, the multilayer electronic component 100 may have two external electrodes 131 and 132 , but the number or shape of the external electrodes may vary depending on the shape of the internal electrodes or other purposes.

[0091] The external electrodes 131 and 132 may be disposed on the body 110 , and may be connected to the internal electrodes 121 and 122 .

[0092] More specifically, the external electrodes 131 and 132 may be disposed on the third surface 3 and the fourth surface 4 of the body 110, respectively, and may include a first external electrode 131 and a second external electrode 132 respectively connected to the first internal electrode 121 and the second internal electrode 122. That is, the first external electrode 131 may be disposed on the third surface 3 of the body and may be connected to the first internal electrode 121, and the second external electrode 132 may be disposed on the fourth surface 4 of the body and may be connected to the second internal electrode 122.

[0093] In addition, the external electrodes 131 and 132 may extend and be disposed on a portion of the first surface 1 and a portion of the second surface 2 of the body 110, and / or may extend and be disposed on a portion of the fifth surface 5 and a portion of the sixth surface 6 of the body 110. That is, the first external electrode 131 may be disposed on a portion of the first surface 1, a portion of the second surface 2, a portion of the fifth surface 5, and a portion of the sixth surface 6 of the body 110, and the third surface 3 of the body 110, and the second external electrode 132 may be disposed on a portion of the first surface 1, a portion of the second surface 2, a portion of the fifth surface 5, and a portion of the sixth surface 6 of the body 110, and the fourth surface 4 of the body 110.

[0094] The external electrodes 131 and 132 may be formed of any material having conductivity, such as metal, and a specific material may be determined in consideration of electrical characteristics and structural stability, and may have a multi-layered structure.

[0095] For example, the external electrodes 131 and 132 may include an electrode layer disposed on the body 110 and a plating layer disposed on the electrode layer.

[0096] For a more specific example of the electrode layer, the electrode layer may include first electrode layers 131a and 132a and / or second electrode layers 131b and 132b, the first electrode layers 131a and 132a may be fired electrodes including a first conductive metal and glass, and the second electrode layers 131b and 132b may be resin-based electrodes including a second conductive metal and resin.

[0097] Here, the conductive metal included in the first electrode layers 131a and 132a may be referred to as a first conductive metal, and the conductive metal included in the second electrode layers 131b and 132b may be referred to as a second conductive metal. In this case, the first conductive metal and the second conductive metal may be the same as or different from each other, and when a plurality of conductive metals are included, only a portion of the first conductive metal and a portion of the second conductive metal may include the same conductive metal, but the embodiment is not limited thereto.

[0098] In addition, the electrode layers 131 a and 132 a , 131 b and 132 b may be formed by sequentially forming a fired electrode and a resin-based electrode on the body 110 .

[0099] In addition, the electrode layers 131a and 132a may be formed by transferring a sheet including a conductive metal onto a body, or the electrode layers 131b and 132b may be formed by transferring a sheet including a conductive metal onto a fired electrode.

[0100] A material having excellent electrical conductivity may be used as the conductive metal included in the electrode layers 131a and 132a, 131b and 132b. For example, the conductive metal may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but the embodiment is not limited thereto.

[0101] In an embodiment, the electrode layers 131a and 132a, 131b and 132b may have a double-layer structure including first electrode layers 131a and 132a and second electrode layers 131b and 132b, and thus, the external electrodes 131 and 132 may include first electrode layers 131a and 132a and second electrode layers 131b and 132b, the first electrode layers 131a and 132a including a first conductive metal and glass, and the second electrode layers 131b and 132b are disposed on the first electrode layers 131a and 132a and including a second conductive metal and resin.

[0102] The first electrode layers 131 a and 132 a may improve adhesiveness with the body 110 by including glass, and the second electrode layers 131 b and 132 b may improve warping strength by including resin.

[0103] The material of the first conductive metal included in the first electrode layers 131 a and 132 a is not limited to any specific example as long as the material can be electrically connected to the internal electrodes 121 and 122 to form a capacitor, and for example, the first conductive metal may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0104] The first electrode layers 131 a and 132 a may be formed by coating a conductive paste prepared by adding glass frit to first conductive metal particles and firing the conductive paste.

[0105] The second conductive metal included in the second electrode layers 131 b and 132 b may allow the second electrode layers 131 b and 132 b and plated layers 131 c and 132 c to be described later to be electrically connected to the first electrode layers 131 a and 132 a .

[0106] The material of the second conductive metal included in the second electrode layers 131 b and 132 b is not limited to any specific example as long as the material can be electrically connected to the electrode layers 131 a and 132 a, and may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0107] The second conductive metal included in the second electrode layers 131b and 132b may include one or more of spherical particles and flake-type particles. In other words, the conductive metal may include only flake-type particles, only spherical particles, or may be a mixture of flake-type particles and spherical particles. Here, the spherical particles may include an incomplete spherical shape, for example, a shape in which the length ratio between the major axis and the minor axis (major axis / minor axis) is greater than or equal to 1.45. Flake-type particles may refer to particles having a flat and elongated shape, and are not limited to any specific example, and for example, the length ratio between the major axis and the minor axis (major axis / minor axis) may be greater than or equal to 1.95. The lengths of the major axis and the minor axis of the spherical particles and the flake-type particles may be measured from an image obtained by scanning a cross section in the first direction and the second direction of a central portion in the third direction of a multilayer electronic component using a scanning electron microscope (SEM).

[0108] The resin included in the second electrode layers 131b and 132b can ensure adhesiveness and absorb impact. The resin included in the second electrode layers 131b and 132b is not limited to any specific example as long as the resin has adhesiveness and impact absorption characteristics and can be mixed with the second conductive metal particles to form a paste, and may include, for example, epoxy resin.

[0109] In addition, the second electrode layers 131b and 132b may include a plurality of metal particles, an intermetallic compound, and a resin. By including the intermetallic compound, electrical connectivity with the first electrode layers 131a and 132a may be improved. The intermetallic compound may improve electrical connectivity by connecting a plurality of metal particles to each other, and may surround a plurality of metal particles and may connect the metal particles to each other.

[0110] In this case, the intermetallic compound may include a metal having a melting point lower than the curing temperature of the resin. That is, since the intermetallic compound may include a metal having a melting point lower than the curing temperature of the resin, the metal having a melting point lower than the curing temperature of the resin may melt during the drying and curing process, may form the intermetallic compound with a portion of the metal particles, and may surround the metal particles. In this case, the intermetallic compound may include a low melting point metal, preferably a metal having a melting point lower than 300°C.

[0111] For example, Sn having a melting point of 213° C. to 220° C. may be included. During the drying and curing process, Sn may melt, and the melted Sn may wet metal particles having a high melting point (such as Ag, Ni, or Cu metal particles) by capillary action, may react with a portion of the Ag, Ni, or Cu metal particles, and may form an intermetallic compound such as Ag. 3 Sn、Ni 3 Sn 4 , Cu 6 Sn5 Cu 3 Sn. Ag, Ni or Cu not participating in the reaction may remain in the form of metal particles.

[0112] Therefore, the plurality of metal particles may include one or more of Ag, Ni, and Cu metal particles, and the intermetallic compound may include Ag. 3 Sn、Ni 3 Sn 4 , Cu 6 Sn 5 and Cu 3 One or more of Sn.

[0113] The plating layers 131c and 132c can improve mounting performance.

[0114] The type of the plating layers 131c and 132c is not limited to any specific example, and the plating layers 131c and 132c may be single-layer plating layers 131c and 132c including at least one of nickel (Ni), tin (Sn), palladium (Pd), and alloys thereof, and may be formed in multiple layers.

[0115] For a more specific example of the plating layers 131c and 132c, the plating layers 131c and 132c may be Ni plating layers or Sn plating layers, or Ni plating layers and Sn plating layers may be sequentially formed on the electrode layer, or Sn plating layers, Ni plating layers and Sn plating layers may be sequentially formed. In addition, the plating layers 131c and 132c may include multiple Ni plating layers and / or multiple Sn plating layers.

[0116] The size of the multilayer electronic component 100 may not be limited to any particular example.

[0117] However, in order to achieve both miniaturization and high capacitance, it may be necessary to increase the number of stacked layers by reducing the thickness of the dielectric layer and the internal electrode, so that the effect described in the embodiment will be apparent in a multilayer electronic component 100 having a size of 1005 (length × width: 1.0 mm × 0.5 mm) or less.

[0118] Here, the multilayer electronic component 100 of size 1005 or less may indicate that the average length of the multilayer electronic component may be 1.0 mm or less and the average width may be 0.5 mm or less, but example embodiments thereof are not limited thereto and may include an error of about 5%.

[0119] (Test example) As for Example 1, a donor element including a rare earth element such as dysprosium (Dy) and terbium (Tb), an acceptor element such as vanadium (V), aluminum (Al), magnesium (Mg), and manganese (Mn), ethanol, toluene, and a dispersant are added to a barium titanate (BaTiO3 ) powder is mixed with the dielectric raw material powder to prepare a dielectric slurry, and a ceramic green sheet is prepared by coating the dielectric slurry on a carrier film and drying the dielectric slurry.

[0120] In this case, the elements are weighed and added so that the amount of each element is 100 mol of barium titanate (BaTiO 3 ) (equivalent to every 100 mol of titanium), the ratio of the number of moles of the donor element Dm to the number of moles of the acceptor element Am (Dm / Am) becomes 1.2, and also the ratio of the number of moles of the donor element Dm to the number of moles of the acceptor element Am (equivalent to every 100 mol of titanium .... 3 ), the ratio of the molar number Vm of the vanadium (V) element to the molar number Dm of the donor element (Vm / Dm) becomes 0.27.

[0121] After that, the internal electrode pattern is formed by coating the conductive paste for the internal electrode on the ceramic green sheet, and repeatedly stacking to form a laminated body, and the laminated body is pressed and cut. After that, the cut laminated body is heated to remove the binder, and fired in a high-temperature reducing atmosphere to form a ceramic body.

[0122] During the firing process, in a reducing atmosphere (0.1% H 2 / 99.9%N 2 , H 2 O / H 2 / N 2 The sintering was carried out at a temperature of 1100°C to 1200°C for about 1 hour in a 0.03% H 2 Reoxidation was performed in an atmosphere for 12 hours and heat treatment was performed.

[0123] Thereafter, external electrodes are formed by performing a termination process on the fired ceramic body using a copper (Cu) paste, thereby manufacturing a multilayer electronic component.

[0124] In this case, the thickness of the dielectric layer 111 is configured to be less than or equal to 1.0 μm, and the area fraction of the core in the dielectric grains having the core-shell structure is configured to be greater than 60%.

[0125] In Comparative Example 1, the elements were weighed and added so that the amount of barium titanate (BaTiO 3 ), the ratio of the number of moles of the donor element Dm to the number of moles of the acceptor element Am (Dm / Am) becomes less than 1.2, and also ... 3 ), the ratio of the number of moles Vm of the vanadium (V) element to the number of moles Dm of the donor element (Vm / Dm) becomes less than 0.2. The process of manufacturing the multilayer electronic component is the same as that of Example 1 above except for the contents of the added donor element and acceptor element.

[0126] Example 1 and Comparative Example 1 were subjected to a highly accelerated life test (HALT) and a temperature coefficient of capacitance (TCC) test.

[0127] In the highly accelerated life test (HALT), a temperature condition of 105°C and a voltage condition of 100V are applied for 100 hours, and a multilayer electronic component in which a short circuit occurs is considered to be defective.

[0128] The TCC characteristic graph shows the capacitance change rate (%) at -55°C and the capacitance change rate (%) at 85°C with respect to the capacitance at 25°C (0%).

[0129] Fig. 6A is a graph of the reliability assessment (HALT) of the example, Figure 6B It is a graph of the reliability evaluation (HALT) of the comparative example. Figure 6C It is a graph showing TCC characteristics of Examples and Comparative Examples.

[0130] like Fig. 6A and Figure 6B As shown, the mean time to failure (MTTF) of Example 1 is longer than that of Comparative Example 1, which indicates that reliability is improved when the conditions of 1.2≤Dm / Am≤1.4 and 0.2≤Vm / Dm are satisfied.

[0131] In addition, if Figure 6C As shown, in Comparative Example 1, the capacitance change rate at -55°C was measured to be -15.83% relative to the capacitance at 25°C, and the capacitance change rate at 85°C was measured to be -20.21%, which do not satisfy the X5R characteristic, while in Example 1, the capacitance change rate at -55°C was measured to be -14.83% relative to the capacitance at 25°C, and the capacitance change rate at 85°C was measured to be -13.29%, which satisfy the X5R characteristic. Therefore, it is shown that when the conditions 1.2≤Dm / Am≤1.4 and 0.2≤Vm / Dm are met, the X5R characteristic is met.

[0132] After that, in the case of manufacturing Comparative Example 2, Comparative Example 3, and Example 2, the cross section of the dielectric layer of each example was observed with EDS, and it was measured whether the TCC characteristic (X5R characteristic) depending on the area fraction of the core was satisfied.

[0133] More specifically, Fig. 7A This is an image of dysprosium (Dy) in a cross section of a dielectric layer of a comparative example (Comparative Example 2) observed by using TEM-EDS. Figure 7B is an image of dysprosium (Dy) in a cross section of a dielectric layer of another comparative example (Comparative Example 3) observed by using TEM-EDS, and Figure 7Cis an image of dysprosium (Dy) in a cross section of a dielectric layer of Example (Example 2) observed by using TEM-EDS.

[0134] In Comparative Example 2, the total number of pixels is 156228, the number of pixels of the core is 59308, and the area fraction of the core is about 38%. In Comparative Example 3, the total number of pixels is 154186, the number of pixels of the core is 62246, and the area fraction of the core is about 40%. In Example 2, the total number of pixels is 148050, the number of pixels of the core is 90818, and the area fraction of the core is about 61%. Here, the area fraction of the core is calculated by defining the pixel where the atomic percentage of dysprosium (Dy) is 0 at% as the pixel of the area corresponding to the core, that is, the area fraction of the core is the ratio of the pixel of the area corresponding to the core to the total number of pixels.

[0135] In this case, the capacitance change rate with temperature was measured for Comparative Example 2 and Example 2. In Comparative Example 2, the capacitance change rate at -55°C was measured to be -15.83%, and the capacitance change rate at 85°C was measured to be -19.21% relative to the capacitance at 25°C, which do not satisfy the X5R characteristics. In Example 2, the capacitance change rate at -55°C was measured to be -14.83%, and the capacitance change rate at 85°C was measured to be -13.19% relative to the capacitance at 25°C, which satisfy the X5R characteristics.

[0136] Therefore, it is shown that when the area fraction of the core in the dielectric grains having the core-shell structure satisfies 60% or more, the capacitance change rate with temperature is improved and the X5R characteristic is satisfied.

[0137] According to the aforementioned embodiments, the X5R characteristics (TCC characteristics) of the multilayer electronic component can be satisfied.

[0138] Furthermore, the reliability of multi-layer electronic components can be improved.

[0139] The embodiments do not necessarily limit the scope of the embodiments to the form of the specific embodiments. On the contrary, variations, equivalents and replacements included in the disclosed concept and technical scope of the present embodiment may be adopted. Throughout the specification, similar reference numerals are used for similar elements.

[0140] In the embodiments, the term "embodiment" may not refer to the same embodiment, and may be provided to describe and emphasize different unique features of each embodiment. The proposed embodiment may be implemented without excluding the possibility of combining with features of other embodiments. For example, even if a feature described in an embodiment is not described in another embodiment, unless otherwise indicated, the description may be understood to be related to another embodiment.

[0141] The terms used in this specification are used to explain the embodiments rather than to limit the present invention. Unless explicitly described to the contrary, a singular form may include a plural form in this specification.

[0142] While embodiments have been shown and described above, it will be readily apparent to those skilled in the art that changes and modifications may be made without departing from the scope of the present disclosure as defined by the appended claims.

Claims

1. A multi-layer electronic component, comprising: a body including a dielectric layer and internal electrodes; and external electrodes disposed on the body, wherein the dielectric layer includes titanium, an acceptor element containing vanadium, and a donor element containing a rare earth element, and wherein when the number of moles of the acceptor element per 100 moles of titanium is defined as Am, the number of moles of the donor element per 100 moles of titanium is defined as Dm, and the number of moles of vanadium per 100 moles of titanium is defined as Vm, the following are satisfied: 1.2 ≤ Dm / Am ≤ 1.4 and 0.2 ≤ Vm / Dm.

2. The multilayer electronic component according to claim 1, wherein Vm satisfies: 0 mole < Vm ≤ 1.0 mole.

3. The multilayer electronic component according to claim 1, wherein: The rare earth element includes at least one of dysprosium, terbium, yttrium, holmium, erbium, gadolinium, cerium, neodymium, samarium, and thulium.

4. The multilayer electronic component according to claim 1, wherein: The rare earth element is at least one of dysprosium and terbium.

5. The multilayer electronic component according to claim 1, wherein The acceptor element further includes at least one of magnesium, aluminum, manganese, chromium, iron, nickel, cobalt, copper, and zinc.

6. The multi-layer electronic component according to claim 1, in, wherein the dielectric layer includes dielectric grains having a core-shell structure, and wherein the area fraction of the core with respect to the area of the dielectric grains having a core-shell structure is greater than or equal to 60%.

7. The multilayer electronic component according to claim 6, wherein: The dielectric grains having a core-shell structure include a rare earth element, and the atomic percentage of the rare earth element in the shell is greater than 0 at% and less than or equal to 0.5 at%.

8. The multilayer electronic component according to claim 1, wherein The dielectric layer includes a barium titanate-based dielectric material.

9. The multilayer electronic component according to claim 1, wherein: The body includes a plurality of dielectric layers, and the average thickness of at least one of the plurality of dielectric layers is less than or equal to 1.0 μm.

10. The multilayer electronic component according to claim 1, wherein The body includes a plurality of internal electrodes, and the average thickness of at least one of the plurality of internal electrodes is less than or equal to 0.6 μm.

11. The multilayer electronic component according to claim 1, wherein The average length of the multi-layer electronic component is less than or equal to 1.0 mm, and the average width of the multi-layer electronic component is less than or equal to 0.5 mm.

12. A dielectric material, comprising: titanium; an acceptor element including vanadium; and a donor element including a rare earth element, wherein 1.2 ≤ Dm / Am ≤ 1.4 and 0.2 ≤ Vm / Dm, wherein Am is the number of moles of the acceptor element per 100 moles of titanium, Dm is the number of moles of the donor element per 100 moles of titanium, and Vm is the number of moles of vanadium per 100 moles of titanium.

13. The dielectric material according to claim 12, wherein The dielectric material includes dielectric grains having a core-shell structure.

14. The dielectric material according to claim 13, wherein The area fraction of the core of the core-shell structure with respect to the area of the dielectric grains having a core-shell structure is at least 60%.

15. The dielectric material according to claim 13, wherein The atomic percentage of the rare earth element in the shell of the core-shell structure is greater than 0 at% and less than or equal to 0.5 at%.

16. An electronic component, comprising the dielectric material according to any one of claims 12 - 15.

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