S / Ka wave band common-aperture antenna and communication equipment

Abstract

The invention belongs to the technical field of antennas, and discloses an S / Ka waveband common-aperture antenna and communication equipment, and the antenna comprises a first dielectric plate and a second dielectric plate which are stacked from top to bottom. The top surface, the middle and the bottom surface of the first dielectric plate are respectively provided with a rectangular patch array, a first metal through hole and a first metal layer; wherein the rectangular patch array, the first metal through hole and the first metal layer form a magnetoelectric dipole antenna array; the magnetoelectric dipole antenna array works in a Ka wave band and is used for realizing satellite communication; the top surface, the middle and the bottom surface of the second dielectric plate are respectively provided with a second metal layer, a second metal through hole and a third metal layer; wherein the second metal layer, the second metal through hole and the third metal layer form a low-profile monopole antenna; the low-profile monopole antenna works in an S wave band and is used for realizing ground equipment communication; the structure is simple, different wave beams and polarization characteristics can be realized, the space utilization rate of the antenna is effectively improved, and the integration degree is high.

Description

Technical Field

[0001] The present invention belongs to the technical field of antennas, and particularly relates to an S / Ka-band common-aperture antenna and a communication device. Background Art

[0002] An antenna is an important component in a communication system; among them, a common-aperture antenna refers to multiple antennas of different forms or antennas with independent input channels that use the same aperture for radiation; with the rapid development of communication technology, how to design and implement a common-aperture antenna with multiple frequency bands, multiple polarizations, and high integration has become a hot issue to be solved.

[0003] Taking the vehicle communication application scenario based on a common-aperture antenna as an example, the communication types mainly include satellite communication and mobile communication to meet the communication requirements between the vehicle and satellite and ground communication devices (including base stations, adjacent vehicles, etc.); among them, in the satellite communication scenario, a unidirectional radiation beam antenna with high-gain circular polarization is usually required; while in the ground device communication scenario, a linear polarization omnidirectional beam is required to achieve wide spatial coverage; however, the different beam and polarization characteristics between multiple frequency bands pose great challenges to the design and integration of the common-aperture antenna, and existing common-aperture antenna solutions are difficult to achieve different beam and polarization characteristics, resulting in technical problems of low space utilization and integration. Summary of the Invention

[0004] Aiming at the technical problems existing in the prior art, the present invention provides an S / Ka-band common-aperture antenna and a communication device to solve the technical problems that existing common-aperture antenna solutions are difficult to achieve different beam and polarization characteristics and have low space utilization and integration.

[0005] To achieve the above object, the technical solution adopted by the present invention is as follows: The present invention provides an S / Ka-band common-aperture antenna, including a first dielectric board and a second dielectric board stacked from top to bottom; A rectangular patch array, a first metal through-hole, and a first metal layer are respectively arranged on the top surface, middle, and bottom surface of the first dielectric board; wherein, the rectangular patch array, the first metal through-hole, and the first metal layer form a magnetoelectric dipole antenna array; the magnetoelectric dipole antenna array operates in the Ka band and is used to achieve satellite communication; A second metal layer, a second metal through-hole, and a third metal layer are respectively arranged on the top surface, middle, and bottom surface of the second dielectric board; wherein, the second metal layer, the second metal through-hole, and the third metal layer form a low-profile monopole antenna; the low-profile monopole antenna operates in the S band and is used to achieve ground device communication.

[0006] Further, the rectangular patch array includes 16 identical patch units, which are periodically arranged in a 4×4 array; wherein, each patch unit includes four radiating patches and a feeding patch arranged in a 4×4 array, and the feeding patch is located in the middle of the four radiating patches; The first metal via hole includes a first short - circuit via hole and a first feeding via hole; the first short - circuit via hole is arranged below the radiating patch, and the first feeding via hole is arranged below the feeding patch; A first circular slot is arranged on the first metal layer, and the first circular slot is correspondingly arranged with the first feeding via hole.

[0007] Further, a second circular slot is arranged on the second metal layer, and the second circular slot is correspondingly arranged with the first feeding via hole; wherein, a first annular slot is arranged on the outer circle of the four second circular slots located in the center, and a first C - shaped slot is arranged on the outer circle of the twelve second circular slots located on the outside; the first C - shaped slots at the four corners face the corners of the adjacent second metal layer, and the remaining first C - shaped slots face the edges of the adjacent second metal layer; The second metal via hole includes a first low - frequency feeding via hole, a first high - frequency feeding via hole, a first low - frequency short - circuit via hole and a first high - frequency short - circuit via hole; the first low - frequency feeding via hole is arranged at the center position of the second dielectric plate; the first high - frequency feeding via hole is correspondingly arranged with the first feeding via hole; the first low - frequency short - circuit via hole is arranged between the twelve second circular slots located on the outside; the first high - frequency short - circuit via hole is arranged between the first circular slot and the first annular slot and between the first circular slot and the first C - shaped slot; A third circular slot is arranged at the center of the third metal layer, and a fourth circular slot is arranged at the corresponding position of the third metal layer where the first high - frequency feeding via hole is located; wherein, a second annular slot is arranged on the outer circle of the four fourth circular slots located in the center, and a second C - shaped slot is arranged on the outer circle of the twelve fourth circular slots located on the outside; the second C - shaped slots at the four corners face the corners of the adjacent third metal layer, and the remaining second C - shaped slots face the edges of the adjacent third metal layer.

[0008] Further, a third dielectric plate is further arranged below the second dielectric plate; The top surface, the middle and the bottom surface of the third dielectric plate are respectively provided with a fourth metal layer, a third metal via hole and a microstrip structure; wherein, the fourth metal layer, the third metal via hole and the microstrip structure form an S / Ka - band feeding network.

[0009] Further, a fifth circular slot is arranged at the center of the fourth metal layer, and a sixth circular slot is arranged at the corresponding position of the fourth metal layer where the first high - frequency feeding via hole is located; The third metal via hole includes a second low-frequency feeding via hole, a second high-frequency feeding via hole, and a second high-frequency shorting via hole; the second low-frequency feeding via hole is disposed at the central position of the third dielectric plate; the second high-frequency feeding via hole is disposed corresponding to the first high-frequency feeding via hole; the second high-frequency shorting via hole is disposed inside the outer two columns of second high-frequency feeding via holes and outside the inner two columns of second high-frequency feeding via holes; The microstrip structure includes a low-frequency feeding structure, a low-frequency matching stub, a high-frequency power distribution structure, and a high-frequency matching stub; the low-frequency feeding structure is disposed at the central axis position of the third dielectric plate, one end of the low-frequency feeding structure close to the outer edge of the third dielectric plate serves as an energy input port, and the other end of the low-frequency feeding structure is connected to the second low-frequency feeding via hole; the low-frequency matching stub is disposed on the low-frequency feeding structure and at a position close to the energy input port; the high-frequency power distribution structure is symmetrically disposed with reference to the two central axes of the third dielectric plate, and the output end of the high-frequency power distribution structure is connected to the second high-frequency feeding via hole; one end of the high-frequency matching stub is connected to the second high-frequency shorting via hole, and the other end of the high-frequency matching stub is connected to the adjacent high-frequency power distribution structure.

[0010] Furthermore, 8 first L-shaped slots are disposed at the edge of the first metal layer, and the 8 first L-shaped slots are symmetrically arranged along the central axis of the first dielectric plate; 8 second L-shaped slots are disposed at the edge of the fourth metal layer, and the 8 second L-shaped slots are symmetrically arranged along the central axis of the third dielectric plate.

[0011] Furthermore, a first bonding plate and a second bonding plate are further included; the first bonding plate is disposed between the first dielectric plate and the second dielectric plate, and the second bonding plate is disposed between the second dielectric plate and the third dielectric plate.

[0012] Furthermore, a fourth metal via hole is disposed on the first bonding plate, and a fifth metal via hole and a sixth metal via hole are disposed on the second bonding plate; the first feeding via hole, the first high-frequency feeding via hole, the second high-frequency feeding via hole, the fourth metal via hole, and the fifth metal via hole are located on the same vertical line; the sixth metal via hole and the second low-frequency feeding via hole are disposed on the same vertical line.

[0013] Furthermore, in each patch unit, the lengths of two adjacent radiation patches are different, and the lengths of two diagonally disposed radiation patches are the same.

[0014] The present invention further provides a communication device, and the communication device includes the S / Ka-band common aperture antenna described above.

[0015] Compared with the prior art, the beneficial effects of the present invention are as follows: The S / Ka-band common-aperture antenna provided by the present invention forms a magnetoelectric dipole antenna array operating in the Ka band through a rectangular patch array, first metal vias, and a first metal layer arranged on the top surface, middle, and bottom surface of a first dielectric plate, so as to achieve circular polarization, high gain, and unidirectional radiation of electromagnetic waves in the Ka band, thereby meeting the requirements for a pencil-beam antenna capable of achieving circular polarization in satellite communication scenarios; a low-profile monopole antenna operating in the S band is formed through a second metal layer, second metal vias, and a third metal layer arranged on the top surface, middle, and bottom surface of a second dielectric plate, so as to achieve vertically polarized and omnidirectional radiation of electromagnetic waves in the S band, thereby meeting the requirements for a linearly polarized omnidirectional beam antenna capable of achieving extensive spatial coverage in ground equipment communication scenarios; the structure of the present invention is simple, can achieve different beam and polarization characteristics, effectively improves the space utilization rate of the antenna, and has a high integration level.

[0016] Further, in the magnetoelectric dipole antenna array, the rectangular patch array adopts patch units arranged in a 4×4 array in a periodic manner, and each patch unit adopts a combined structure of four radiation patches and a feeding patch. A first circular slot corresponding to the first feeding via is arranged on the first metal layer, and a first shorting via is arranged below the radiation patch to form a circular polarization high-gain antenna array applicable to the Ka band.

[0017] Further, in the low-profile monopole antenna operating in the S band, the shorting post structure of the S-band antenna is replaced with a coaxial feeding structure of the Ka-band array antenna, and the overall structure of the S-band antenna is reused as the metal floor of the Ka-band array antenna, thereby realizing a high degree of integration and antenna miniaturization.

[0018] Further, two pairs of metal patch structures with unequal lengths are used as the electric dipole of the magnetoelectric dipole antenna, realizing high-gain circular polarization beam characteristics. Description of the Drawings

[0019] Figure 1 Schematic diagram of the overall structure of the S / Ka-band common-aperture antenna provided in Embodiment 1; Figure 2 Schematic diagram of the first dielectric plate in Embodiment 1; among them, the Figure 2 schematic diagrams of the rectangular patch array, the first metal via, and the second metal layer are shown from left to right in the figure; Figure 3 Schematic diagram of the second dielectric plate in Embodiment 1; among them, the Figure 3 schematic diagrams of the second metal layer, the second metal via, and the third metal layer are shown from left to right in the figure; Figure 4 Schematic diagram of the third dielectric plate in Embodiment 1; among them, the Figure 4A schematic diagram of the structure from left to right is the fourth metal layer, the third metal via, and the microstrip structure; Figure 5 A schematic diagram of the structure of the first bonding plate in Example 1; Figure 6 A schematic diagram of the structure of the second bonding plate in Example 1; Figure 7 A graph of the return loss and port coupling coefficient of the S / Ka-band common aperture antenna provided in Example 1 in the S band; Figure 8 A graph of the gain and efficiency curves of the S / Ka-band common aperture antenna provided in Example 1 in the S band; Figure 9 The far-field radiation pattern of the S / Ka-band common aperture antenna provided in Example 1 at 3.5 GHz, φ = 0° and θ = 40° cross-sections; where, Figure 9 a is the far-field radiation pattern of the S / Ka-band common aperture antenna at 3.5 GHz, φ = 0° cross-section; Figure 9 b is the far-field radiation pattern of the S / Ka-band common aperture antenna at 3.5 GHz, φ = 40° cross-section; Figure 10 A return loss graph of the S / Ka-band common aperture antenna provided in Example 1 in the Ka band; Figure 11 A graph of the gain and circular polarization axial ratio of the S / Ka-band common aperture antenna provided in Example 1 in the Ka band; Figure 12 The far-field radiation pattern of the S / Ka-band common aperture antenna provided in Example 1 at 27 GHz and 29 GHz, φ = 0° and φ = 90° cross-sections; where, Figure 12 a is the far-field radiation pattern of the S / Ka-band common aperture antenna at 27 GHz, φ = 0° cross-section; Figure 12 b is the far-field radiation pattern of the S / Ka-band common aperture antenna at 29 GHz, φ = 0° cross-section; Figure 12 c is the far-field radiation pattern of the S / Ka-band common aperture antenna at 27 GHz, φ = 90° cross-section; Figure 12 d is the far-field radiation pattern of the S / Ka-band common aperture antenna at 29 GHz, φ = 90° cross-section.

[0020] Among them, 1 is the first dielectric plate, 2 is the second dielectric plate, 3 is the third dielectric plate, 4 is the first bonding plate, 5 is the second bonding plate; 11 is a rectangular patch array, 12 is the first metal via hole, 13 is the first metal layer; 111 is a radiation patch, 112 is a feeding patch; 121 is the first shorting via hole, 122 is the first feeding via hole; 131 is the first circular slot, 132 is the first L-shaped slot; 21 is the second metal layer, 22 is the second metal via hole, 23 is the third metal layer; 211 is the second circular slot, 212 is the first annular slot, 213 is the first C-shaped slot; 221 is the first low-frequency feeding via hole, 222 is the first high-frequency feeding via hole, 223 is the first low-frequency shorting via hole, 224 is the first high-frequency shorting via hole; 231 is the third circular slot, 232 is the fourth circular slot, 233 is the second annular slot, 234 is the second C-shaped slot; 31 is the fourth metal layer, 32 is the third metal layer, 33 is a microstrip structure; 311 is the fifth circular slot, 312 is the sixth circular slot, 313 is the second L-shaped slot; 321 is the second low-frequency feeding via hole, 322 is the second high-frequency feeding via hole, 323 is the second high-frequency shorting via hole; 331 is a low-frequency feeding structure, 332 is a low-frequency matching stub, 333 is a high-frequency power distribution structure, 334 is a high-frequency matching stub; 41 is the fourth metal via hole; 51 is the fifth metal via hole, 52 is the sixth metal via hole. Detailed implementation manners

[0021] In order to make the technical problems, technical solutions and beneficial effects solved by the present invention clearer and more understandable, the following specific embodiments are used to further elaborate on the present invention. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0022] Embodiment 1 As shown in the attached Figure 1 figures, Embodiment 1 of the present invention provides an S / Ka-band co-aperture antenna, which includes a first dielectric plate 1, a second dielectric plate 2, and a third dielectric plate 3 stacked from top to bottom; a first bonding plate 4 is further provided between the first dielectric plate 1 and the second dielectric plate 2, and the first dielectric plate 1 and the second dielectric plate 2 are connected together by using the first bonding plate 4; a second bonding plate 5 is further provided between the second dielectric plate 2 and the third dielectric plate 3, and the second dielectric plate 2 and the third dielectric plate 3 are connected together by using the second bonding plate 5.

[0023] As shown in the attached Figure 1 and 2As shown, a rectangular patch array 11, a first metal via 12, and a first metal layer 13 are respectively provided on the top surface, the middle, and the bottom surface of the first dielectric plate 1; specifically, the rectangular patch array 11 is provided on the top surface of the first dielectric plate 1; the first metal via 12 is disposed through the first dielectric plate 1 along the thickness direction thereof to connect the rectangular patch array 11 and the first metal patch 13; the first metal layer 13 is provided on the bottom surface of the first dielectric plate 1; the rectangular patch array 11, the first metal via 12, and the first metal layer 13 form a magnetoelectric dipole antenna array; wherein, the magnetoelectric dipole antenna array operates in the Ka band and is used for radiating high-gain circularly polarized electromagnetic waves to achieve satellite communication.

[0024] The rectangular patch array 11 includes 16 identical patch units, and the 16 identical patch units are periodically arranged in a 4×4 array; each patch unit includes four radiation patches 111 and a feeding patch 112, the four radiation patches 111 are arranged in a 4×4 array, and the feeding patch 112 is disposed in the middle of the four radiation patches 111; wherein, in each patch unit, the lengths of two adjacent radiation patches 111 are different, and the lengths of two diagonally arranged radiation patches 111 are the same; specifically, in each patch unit, the sizes of the radiation patch in the upper left corner and the radiation patch in the lower right corner are the same, and the sizes of the radiation patch in the upper right corner and the radiation patch in the lower left corner are the same; that is, a structure of two pairs of unequal-length metal patches is adopted as the electric dipole of the magnetoelectric dipole antenna to achieve the beam characteristics of high-gain circular polarization.

[0025] The first metal via 12 includes a first shorting via 121 and a first feeding via 122, the first shorting via 121 is disposed below the radiation patch 111, and the first feeding via 122 is disposed below the feeding patch 112; wherein, the first shorting via 121 is used to connect the radiation patch 111 and the first metal layer 13, and the first feeding via 122 is used to connect the feeding patch 112 and the first metal layer 13.

[0026] The first metal layer 13 is a rectangular metal layer structure disposed on the bottom surface of the first dielectric plate 1; a first circular slot 131 is provided on the first metal layer 13, and the first circular slot 131 is arranged corresponding to the first feeding through hole 122 up and down; wherein, the first circular slot 131 is used to communicate the first feeding through hole 122 with the corresponding structure in the second dielectric plate 2; at the edge of the first metal layer 13, 8 first L-shaped slots 132 are provided, and the 8 first L-shaped slots 132 are symmetrically arranged along the central axis of the first dielectric plate 1; wherein, the first L-shaped slot 132 is used to suppress the patch resonance mode, that is, to suppress the coupling generated between the magnetoelectric dipole antenna array and the low-profile monopole antenna due to the multiplexing structure; specifically, two first L-shaped slots 132 are respectively provided on each side of the first metal layer 13, the two first L-shaped slots 132 on the same side are symmetric about the central axis of the first dielectric plate 1, and the two first L-shaped slots 132 on the opposite sides are symmetric about the central axis of the first dielectric plate 1.

[0027] In Embodiment 1, the radiation patch 111 is set as two pairs of metal patches with unequal lengths, that is, two pairs of metal patches with unequal lengths are used as the electric dipole of the magnetoelectric dipole antenna, so that the improved magnetoelectric dipole antenna can radiate circularly polarized waves and can effectively control the size of the antenna element, making it suitable for forming a Ka-band circularly polarized high-gain antenna array; using two pairs of metal patches with unequal lengths as the electric dipole of the magnetoelectric dipole antenna realizes the high-gain circularly polarized beam characteristics; secondly, based on the coaxial feeding structure formed by the first metal through hole 12, the problems of complex feeding and low integration of the common-aperture antenna can be effectively solved.

[0028] It should be noted that the physical sizes and relative positions of the radiation patch 111, the feeding patch 112, the first shorting through hole 121, and the first feeding through hole 122 match the performance of the magnetoelectric dipole antenna array, that is, the physical sizes and relative positions of the radiation patch 111, the feeding patch 112, the first shorting through hole 121, and the first feeding through hole 122 can determine the performance of the magnetoelectric dipole antenna array; wherein, the performance of the magnetoelectric dipole antenna array includes the radiation pattern, gain, impedance matching, and axial ratio of the magnetoelectric dipole antenna array.

[0029] As shown in the appendix Figure 1 、 3As shown, a second metal layer 21, a second metal via 22, and a third metal layer 23 are respectively disposed on the top surface, the middle, and the bottom surface of the second dielectric plate 2; specifically, the second metal layer 21 is disposed on the top surface of the second dielectric plate 2, the second metal via 22 is disposed through the second dielectric plate 2 along the thickness direction thereof to connect the second metal layer 21 and the third metal layer 23; the third metal layer 23 is disposed on the bottom surface of the second dielectric plate 2; the second metal layer 21, the second metal via 22, and the third metal layer 23 form a low-profile monopole antenna; wherein, the low-profile monopole antenna operates in the S band, and by simultaneously exciting the TM01 and TM02 electromagnetic modes, it can radiate omnidirectional vertically polarized electromagnetic waves to achieve ground equipment communication.

[0030] The second metal layer 21 is a rectangular metal layer structure disposed on the top surface of the second dielectric plate 2; 16 second circular slots 211 are disposed on the second metal layer 2, the 16 second circular slots 211 are periodically arranged in a 4×4 array and are correspondingly disposed with the first feeding via 122; that is, the second circular slots 211 are disposed at the corresponding positions of the first feeding via 122 on the second metal layer 21; wherein, a first annular slot 212 is disposed on the outer circle of the four second circular slots 211 at the center, and a first C-shaped slot 213 is disposed on the outer circle of the twelve second circular slots 211 at the outer side; the first C-shaped slots 213 at the four corners face the corners of the adjacent second metal layer 21, and the remaining first C-shaped slots 213 face the edges of the adjacent second metal layer 21; it should be noted that the second circular slots 211 are used to realize the connection between the first feeding via 122 and the lower layer structure, the first annular slot 212 is used to improve the isolation between the Ka-band antenna and the S-band antenna, and the first C-shaped slots 213 are used to improve the impedance matching and radiation performance of the S-band antenna.

[0031] The second metal via 22 includes a first low-frequency feeding via 221, a first high-frequency feeding via 222, a first low-frequency shorting via 223, and a first high-frequency shorting via 224; the first low-frequency feeding via 221 is disposed at the center of the second dielectric substrate 2, and the first low-frequency feeding via 221 is used to realize the energy input of the S-band antenna; the first low-frequency shorting via 223 is disposed between the twelve second circular slots 211 on the outer side, and the first low-frequency shorting via 223 is used to optimize the impedance matching and omnidirectional radiation performance of the S-band antenna; wherein, between the twelve second circular slots 211 on the outer side, a first low-frequency shorting via 223 is disposed between adjacent two second circular slots 211; the first high-frequency shorting via 224 is disposed between the first circular slot 221 and the first annular slot 212 and between the first circular slot 221 and the first C-shaped slot 213, and the first high-frequency shorting via 224 is used to isolate the feeding structures of the S-band antenna and the Ka-band antenna, thereby optimizing the performance of the magnetoelectric dipole antenna array and the low-profile monopole antenna; specifically, the first high-frequency shorting via 223 is arranged in an annular array between the first circular slot 221 and the first annular slot 212 and between the first circular slot 221 and the first C-shaped slot 213.

[0032] The third metal layer 23 is a rectangular metal layer structure disposed on the bottom surface of the second dielectric substrate 2; a third circular slot 231 is provided at the center of the third metal layer 23, and the third circular slot 231 is used to realize the connection between the first low-frequency feeding via 221 and the lower-layer structure; 16 fourth circular slots 232 are further provided on the third metal layer 23, and the 16 fourth circular slots 232 are periodically arranged in a 4×4 array and are correspondingly disposed with the first high-frequency feeding via 222; that is, the third metal layer 23 is provided with a fourth circular slot 232 at the corresponding position of the first high-frequency feeding via 222; wherein, a second annular slot 233 is provided on the outer circle of the four fourth circular slots 232 at the center, and a second C-shaped slot 234 is provided on the outer circle of the twelve fourth circular slots 232 on the outer side; the second C-shaped slots 234 at the four corners face the corners of the adjacent third metal layer 23, and the remaining second C-shaped slots 234 face the edges of the adjacent third metal layer 23; it should be noted that the fourth circular slot 232 is used to realize the connection between the first high-frequency feeding via 222 and the lower-layer structure, the second annular slot 233 is used to improve the isolation between the Ka-band antenna and the S-band antenna, and the second C-shaped slot 234 is used to improve the impedance matching and radiation performance of the S-band antenna.

[0033] In this Embodiment 1, a low-profile monopole antenna operating in the S band is formed by the second metal layer 21, the second metal through-hole 22, and the third metal layer 23 provided on the top surface, the middle, and the bottom surface of the second dielectric plate 2, that is, a square low-profile monopole patch antenna in the S band is realized. By exciting the TM 01 and TM 02 resonant modes, omnidirectional radiation identical to that of the monopole antenna is achieved; and since a metal patch is used as the radiator, the antenna has the characteristic of low profile; wherein, the shorting post structure of the S-band antenna is reused as the coaxial feed structure of the Ka-band array antenna, and the entire S-band antenna structure is reused as the metal floor of the Ka-band array antenna. Two antennas operating in different frequency bands share the same structure, reducing the redundant structure of the antenna and improving the space utilization rate, thereby realizing high integration and antenna miniaturization.

[0034] As shown in Figure 1 and 4 , a fourth metal layer 31, a third metal through-hole 32, and a microstrip structure 33 are respectively provided on the top surface, the middle, and the bottom surface of the third dielectric plate 3; specifically, the fourth metal layer 31 is provided on the top surface of the third dielectric plate 3; the third metal through-hole 32 is provided to penetrate along the thickness direction of the third dielectric plate 3 to connect the fourth metal layer 31 and the microstrip structure 33; the microstrip structure 33 is provided on the bottom surface of the third dielectric plate 3; wherein, the fourth metal layer 31, the third metal through-hole 32, and the microstrip structure 33 form an S / Ka-band feed network.

[0035] The fourth metal layer 31 is a rectangular metal layer structure disposed on the top surface of the third dielectric plate 1; a fifth circular slot 311 is provided at the center of the fourth metal layer 31, and the fifth circular slot 311 is used to connect the first low-frequency feeding through hole 221 to the lower structure; 16 sixth circular slots 312 are further provided on the fourth metal layer 31, and the 16 sixth circular slots 312 are periodically arranged in a 4×4 array and are correspondingly arranged with the first high-frequency feeding through holes 222; that is, the fourth metal layer 31 is provided with sixth circular slots 312 at the corresponding positions of the first high-frequency feeding through holes 222; wherein, the sixth circular slots 312 are used to connect the first high-frequency feeding through holes 222 to the lower structure; 8 second L-shaped slots 313 are provided at the edge of the fourth metal layer 31, and the 8 second L-shaped slots 313 are symmetrically arranged along the central axis of the third dielectric plate 3; wherein, the second L-shaped slots 313 are used to suppress the patch resonance mode, that is, to suppress the coupling generated between the magnetoelectric dipole antenna array and the low-profile monopole antenna due to the multiplexing structure; specifically, two second L-shaped slots 313 are respectively provided on each side of the fourth metal layer 31, the two second L-shaped slots 313 on the same side are symmetric about the central axis of the third dielectric plate 3, and the two second L-shaped slots 313 on the opposite sides are symmetric about the central axis of the third dielectric plate 3.

[0036] The third metal through hole 32 includes a second low-frequency feeding through hole 321, a second high-frequency feeding through hole 322 and a second high-frequency shorting through hole 323; the second low-frequency feeding through hole 321 is provided at the center of the third dielectric plate 3, and the second low-frequency feeding through hole 321 is used to input electromagnetic energy to the S-band full-polarization antenna; the second high-frequency feeding through hole 322 is correspondingly arranged with the first high-frequency feeding through hole 222, and the second high-frequency feeding through hole 322 is used to input electromagnetic energy to the Ka-band antenna; the second high-frequency shorting through hole 323 is provided inside the outer two columns of the second high-frequency feeding through holes 322 and is located outside the inner two columns of the second high-frequency feeding through holes 322, and the second high-frequency shorting through hole 323 is used to improve the impedance matching level of the high-frequency power distribution structure 333.

[0037] The microstrip structure 33 includes a low-frequency feeding structure 331, a low-frequency matching stub 332, a high-frequency power distribution structure 333, and a high-frequency matching stub 334; the low-frequency feeding structure 331 is disposed at the central axis position of the third dielectric plate 3, and the low-frequency feeding structure 331 is used to input electromagnetic energy to the S-band antenna; wherein, one end of the low-frequency feeding structure 331 close to the outer edge of the third dielectric plate 3 serves as an energy input port, and the other end of the low-frequency feeding structure 331 is connected to the second low-frequency feeding through hole 321; the low-frequency matching stub 332 is disposed on the low-frequency feeding structure 331 and is located at a position close to the energy input port; the low-frequency matching stub 332 is used to improve the impedance matching level of the S-band antenna; the high-frequency power distribution structure 333 is symmetrically disposed with reference to the two central axes of the third dielectric plate 3, and the output end of the high-frequency power distribution structure 333 is connected to the second high-frequency feeding through hole 322; wherein, the high-frequency power distribution structure 333 is used to equally divide the electromagnetic energy input from the port into 16 parts, so as to provide energy for the Ka-band array antenna; one end of the high-frequency matching stub 334 is connected to the second high-frequency shorting through hole 323, and the other end of the high-frequency matching stub 334 is connected to the adjacent high-frequency power distribution structure 333; wherein, the high-frequency matching stub 334 improves the impedance matching level of the high-frequency power distribution structure 333.

[0038] In the present invention, the coaxial feeding structure in the magnetoelectric dipole antenna array operating in the Ka band is reused as the shorting post structure of the low-profile monopole antenna operating in the S band, assisting the S-band antenna to excite TM 01 and TM 02 resonant modes, expanding the bandwidth of the S-band antenna; at the same time, by reasonably arranging the second metal through holes 22, and reasonably arranging the holes on the second metal layer 21 and the third metal layer 23, the energy leakage is shielded, and the efficient feeding of the Ka-band feeding network is realized. Two antennas operating in different frequency bands share the same structure, reducing the redundant structure of the antenna, improving the space utilization rate, and thus realizing high integration and antenna miniaturization.

[0039] As shown in the attached Figure 1 、 5 figure, 16 fourth metal through holes 41 are provided on the first bonding plate 4, and the 16 fourth metal through holes 41 are periodically arranged in a 4×4 array; wherein, the fourth metal through holes 41 penetrate through the first bonding plate 4 in the thickness direction, and the fourth metal through holes 41 are used to connect the high-frequency feeding structures of the upper and lower layers.

[0040] As shown in the attached Figure 1 、 6As shown, 16 fifth metal through-holes 51 are provided on the second bonding plate 5, and the 16 fifth metal through-holes 51 are periodically arranged in a 4×4 array; wherein, the fifth metal through-holes 51 penetrate through the second bonding plate 5 in the thickness direction thereof, and the fifth metal through-holes 51 are used to connect the high-frequency feeding structures of the upper and lower layers; a sixth metal through-hole 52 is further provided at the center of the second bonding plate 5, and the sixth metal through-hole 52 is used to connect the low-frequency feeding structures of the upper and lower layers.

[0041] It should be noted that the first feeding through-hole 122, the first high-frequency feeding through-hole 222, the second high-frequency feeding through-hole 322, the fourth metal through-hole 41 and the fifth metal through-hole 51 are located on the same vertical line; the sixth metal through-hole 52 and the second low-frequency feeding through-hole 321 are provided on the same vertical line.

[0042] In this Embodiment 1, by providing 8 first L-shaped slots 132 at the edge of the first metal layer 13 and 8 second L-shaped slots 313 at the edge of the fourth metal layer 31, the first L-shaped slots 132 and the second L-shaped slots 313 are used to suppress the patch resonance mode, that is, to suppress the coupling between the magnetoelectric dipole antenna array and the low-profile monopole antenna due to the multiplexing structure, improve the isolation between the magnetoelectric dipole antenna array and the low-profile monopole antenna, and ensure the performance of the antenna in the Ka band and the S band; the first annular slot 212, the first high-frequency shorting through-hole 224 and the second annular slot 233 are used to reduce the influence of the high-frequency feeding structure on the low-frequency resonance mode; the two act together to maintain the impedance matching and radiation pattern of the low-profile monopole antenna.

[0043] In this Embodiment 1, the first low-frequency shorting through-hole 223 is used to adjust the impedance matching and radiation pattern of the low-profile monopole antenna; the first C-shaped slot 213 and the second C-shaped slot 234 enable partial multiplexing of the high-frequency shorting through-hole 224 structure, so that it has a function similar to that of the first low-frequency shorting through-hole 223.

[0044] As shown in the appendix Figure 7 shown, the appendix Figure 7 gives the echo loss and port coupling coefficient diagrams of the S / Ka-band common-aperture antenna in the S band; it can be seen from the appendix Figure 7 that two resonance peaks can be observed near 3.42 GHz and 3.57 GHz for the antenna; the impedance bandwidth with S11 < -10 dB is about 260 MHz; ranging from 3.37 GHz to 3.63 GHz, the antenna achieves sufficient bandwidth to meet the requirements in general communication scenarios; within the entire operating frequency band, S21 is below -15 dB, indicating that the high- and low-frequency antenna structures have good isolation in the S band.

[0045] As shown in the appendixFigure 8 As shown, attached Figure 8 The gain and efficiency curves of the S / Ka band common aperture antenna in the S band are given in the attached Figure 8 It can be seen that the antenna gain in the S band is 3.8-4.2dBi; at the same time, the radiation efficiency of the antenna in the entire working frequency band reaches more than 75%.

[0046] As attached Figure 9 As shown, attached Figure 9 The far-field radiation patterns of the S / Ka-band common-aperture antenna at 3.5 GHz, φ=0° and θ=40° are given in Fig. Figure 9 a is the far-field radiation pattern of the S / Ka-band common-aperture antenna at 3.5 GHz, φ=0° section; Figure 9 b is the far-field radiation pattern of the S / Ka band common aperture antenna at 3.5 GHz with a φ=40° section; Figure 9 It can be seen that the radiation pattern of the antenna in the S band is an omnidirectional beam, with a minimum value in the normal direction and a maximum value in the side-fire direction.

[0047] As attached Figure 10 As shown, attached Figure 10 The return loss diagram of the S / Ka band common aperture antenna in the Ka band is given in the attached Figure 10 It can be seen that the impedance bandwidth of the antenna in the Ka-band S11<−10dB is about 11.3GHz; ranging from 22.9GHz to 34.2GHz, the antenna covers the frequency band in the Ka-band used for satellite communications and can meet the needs of satellite communications.

[0048] As attached Figure 11 As shown, attached Figure 11 The gain and circular polarization axis ratio of the S / Ka band common aperture antenna in the Ka band are given in the attached figure. Figure 11 It can be seen that the average gain of the antenna in the Ka-band working frequency band is about 17dBi, and the maximum gain is about 19dB; the 3dB axial ratio bandwidth is 7GHz, from 26.5GHz to 33.5GHz.

[0049] As attached Figure 12 As shown, attached Figure 12 The far-field radiation patterns of the S / Ka band common aperture antenna at 27 GHz and 29 GHz, φ = 0° and φ = 90° are given in the figure. Figure 12 a is the far-field radiation pattern of the S / Ka band common-aperture antenna at 27 GHz, φ=0° section; Figure 12 b is the far-field radiation pattern of the S / Ka band common-aperture antenna at 29 GHz, φ = 0° section; Figure 12c is the far-field radiation pattern of the S / Ka-band common-aperture antenna in the 27 GHz, φ = 90° plane; Figure 12 d is the far-field radiation pattern of the S / Ka-band common-aperture antenna in the 29 GHz, φ = 90° plane; As can be seen from the appendix Figure 12 In the radiation patterns of the antenna in the two planes of φ = 0 and φ = 90, the first sidelobe level is lower than -15 dB; the pattern exhibits the characteristics of a high-gain pencil beam.

[0050] Embodiment 2 Embodiment 2 of the present invention provides a communication device, which is used to realize satellite communication and ground device communication; for example, the communication device is a vehicle; wherein, the communication device includes the S / Ka-band common-aperture antenna described in Embodiment 1 above; for the S / Ka-band common-aperture antenna, see the description of Embodiment 1 above, and details will not be repeated here.

[0051] The S / Ka-band common-aperture antenna of the present invention forms a magnetoelectric dipole antenna array operating in the Ka band through the rectangular patch array, the first metal through holes and the first metal layer arranged on the top surface, the middle and the bottom surface of the first dielectric plate, and forms a low-profile monopole antenna operating in the S band through the second metal layer, the second metal through holes and the third metal layer arranged on the top surface, the middle and the bottom surface of the second dielectric plate, so that the antenna can realize vertically polarized and omnidirectional electromagnetic waves in the S band, thus meeting the requirements for a linearly polarized omnidirectional beam antenna that can achieve a wide spatial coverage in the ground device communication scenario; at the same time, in the Ka band, circularly polarized, high-gain and unidirectional electromagnetic waves can be realized, thus meeting the requirements for a pencil beam antenna with circular polarization in the satellite communication scenario.

[0052] The above embodiments are only one of the implementation manners that can realize the technical solution of the present invention. The scope of protection required by the present invention is not limited only by this embodiment, but also includes any changes, substitutions and other implementation manners that are easily conceivable by those skilled in the art within the technical scope disclosed by the present invention.

Claims

1. An S / Ka band common aperture antenna, characterized in that: It comprises a first medium plate (1) and a second medium plate (2) which are stacked from top to bottom; The top surface, the middle surface and the bottom surface of the first dielectric plate (1) are respectively provided with a rectangular patch array (11), a first metal through hole (12) and a first metal layer (13); wherein the rectangular patch array (11), the first metal through hole (12) and the first metal layer (13) form a magnetoelectric dipole antenna array; the magnetoelectric dipole antenna array operates in the Ka band and is used to realize satellite communication; A second metal layer (21), a second metal through hole (22) and a third metal layer (23) are respectively provided on the top surface, the middle surface and the bottom surface of the second dielectric plate (2); wherein the second metal layer (21), the second metal through hole (22) and the third metal layer (23) form a low-profile monopole antenna; the low-profile monopole antenna operates in the S band and is used to realize ground equipment communication.

2. The S / Ka band common aperture antenna according to claim 1, characterized in that: The rectangular patch array (11) includes 16 identical patch units and is arranged in 4 metal layers; each patch unit includes four radiation patches (111) and a feeding patch (112) in a 4×4 array, and the feeding patch (112) is located in the middle of the four radiation patches (111); The first metal through hole (12) comprises a first short-circuit through hole (121) and a first feeding through hole (122); the first short-circuit through hole (121) is arranged below the radiation patch (111), and the first feeding through hole (122) is arranged below the feeding patch (112); A first circular slit (131) is provided on the first metal layer (13), and the first circular slit (131) is provided corresponding to the first feeding through hole (122).

3. The S / Ka band common aperture antenna according to claim 2, characterized in that: The second metal layer (21) is provided with a second circular slit (211), and the second circular slit (211) is arranged corresponding to the first feeding through hole (122); wherein the outer rings of the four second circular slits (211) located in the center are provided with a first annular slit (212), and the outer rings of the twelve second circular slits (211) located on the outside are provided with a first C-shaped slit (213); the first C-shaped slits (213) located at the four corners face the corners of the adjacent second metal layer (21), and the remaining first C-shaped slits (213) face the edges of the adjacent second metal layer (21); The second metal through hole (22) comprises a first low-frequency feeding through hole (221), a first high-frequency feeding through hole (222), a first low-frequency short-circuit through hole (223) and a first high-frequency short-circuit through hole (224); the first low-frequency feeding through hole (221) is arranged at the center of the second dielectric plate (2); the first high-frequency feeding through hole (222) is arranged corresponding to the first feeding through hole (122); the first low-frequency short-circuit through hole (223) is arranged between the twelve second circular slots (211) located on the outside; the first high-frequency short-circuit through hole (224) is arranged between the first circular slot (221) and the first annular slot (212) and between the first circular slot (221) and the first C-shaped slot (213); A third circular slit (231) is provided at the center of the third metal layer (23), and a fourth circular slit (232) is provided at a corresponding position of the first high-frequency feeding through hole (222) of the third metal layer (23); wherein the outer rings of the four fourth circular slits (232) located in the center are provided with second annular slits (233), and the outer rings of the twelve fourth circular slits (232) located on the outside are provided with second C-shaped slits (234); the second C-shaped slits (234) located at the four corners face the corners of the adjacent third metal layer (23), and the remaining second C-shaped slits (234) face the edges of the adjacent third metal layer (23).

4. The S / Ka band common aperture antenna according to claim 3, characterized in that: A third dielectric plate (3) is also provided below the second dielectric plate (2); A fourth metal layer (31), a third metal through hole (32) and a microstrip structure (33) are respectively provided on the top surface, the middle surface and the bottom surface of the third dielectric plate (3); wherein the fourth metal layer (31), the third metal through hole (32) and the microstrip structure (33) form an S / Ka band feeding network.

5. The S / Ka band common aperture antenna according to claim 4, characterized in that: A fifth circular slit (311) is provided at the center of the fourth metal layer (31), and a sixth circular slit (312) is provided at a position of the fourth metal layer (31) corresponding to the first high-frequency feeding through hole (222); The third metal through hole (32) comprises a second low-frequency feeding through hole (321), a second high-frequency feeding through hole (322) and a second high-frequency short-circuit through hole (323); the second low-frequency feeding through hole (321) is arranged at the center of the third dielectric plate (3); the second high-frequency feeding through hole (322) is arranged corresponding to the first high-frequency feeding through hole (222); the second high-frequency short-circuit through hole (323) is arranged on the inner side of the two outer rows of second high-frequency feeding through holes (322) and is located on the outer side of the two inner rows of second high-frequency feeding through holes (322); The microstrip structure (33) comprises a low-frequency feeding structure (331), a low-frequency matching branch (332), a high-frequency power distribution structure (333) and a high-frequency matching branch (334); the low-frequency feeding structure (331) is arranged at the central axis position of the third dielectric plate (3); one end of the low-frequency feeding structure (331) close to the outer edge of the third dielectric plate (3) is used as an energy input port, and the other end of the low-frequency feeding structure (331) is connected to the second low-frequency feeding through hole (321); the low-frequency matching branch (332) The high-frequency power distribution structure (333) is arranged on the low-frequency feeding structure (331) and is located near the energy input port; the high-frequency power distribution structure (333) is symmetrically arranged with reference to the two central axes of the third dielectric plate (3), and the output end of the high-frequency power distribution structure (333) is connected to the second high-frequency feeding through hole (322); one end of the high-frequency matching branch (334) is connected to the second high-frequency short-circuit through hole (323), and the other end of the high-frequency matching branch (334) is connected to the adjacent high-frequency power distribution structure (333).

6. The S / Ka band common aperture antenna according to claim 5, characterized in that: Eight first L-shaped slits (132) are provided at the edge of the first metal layer (13), and the eight first L-shaped slits (132) are symmetrically arranged along the central axis of the first dielectric plate (1); and eight second L-shaped slits (313) are provided at the edge of the fourth metal layer (31), and the eight second L-shaped slits (313) are symmetrically arranged along the central axis of the third dielectric plate (3).

7. The S / Ka band common aperture antenna according to claim 6, characterized in that: It also comprises a first adhesive plate (4) and a second adhesive plate (5); the first adhesive plate (4) is arranged between the first medium plate (1) and the second medium plate (2), and the second adhesive plate (5) is arranged between the second medium plate (2) and the third medium plate (3).

8. The S / Ka band common aperture antenna according to claim 7, characterized in that: The first adhesive plate (4) is provided with a fourth metal through hole (41), and the second adhesive plate (5) is provided with a fifth metal through hole (51) and a sixth metal through hole (52); the first feeding through hole (122), the first high-frequency feeding through hole (222), the second high-frequency feeding through hole (322), the fourth metal through hole (41) and the fifth metal through hole (51) are located on the same vertical line; and the sixth metal through hole (52) and the second low-frequency feeding through hole (321) are arranged on the same vertical line.

9. The S / Ka band common aperture antenna according to claim 1, characterized in that: In each patch unit, the lengths of two adjacent radiation patches (111) are different, and the lengths of two radiation patches (111) arranged diagonally are the same.

10. A communication device, characterized in that: The communication device includes the S / Ka band common-aperture antenna as described in any one of claims 1-9.

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