Light-emitting assembly, preparation method thereof and display substrate

Abstract

The invention discloses a light-emitting assembly, a preparation method thereof and a display substrate, and relates to the technical field of display. The light-emitting assembly comprises a substrate, a color conversion unit, a light-emitting unit and a connecting layer located between the color conversion unit and the light-emitting unit. The first connecting part of the connecting layer comprises the first connecting base material and the particle structure located in the first connecting base material, so that the material consumption of the first connecting base material can be reduced, and the shrinkage rate of the cured material of the first connecting base material is reduced. Moreover, the particle structure can be used as a spacer to be located between the color conversion unit and the light emitting unit, can play a certain role in supporting the color conversion unit and the light emitting unit, can guarantee the thickness uniformity of the color conversion unit and the light emitting unit after the color conversion unit and the light emitting unit are bonded through the connecting layer, and improves the yield of the light emitting assembly.

Description

Technical Field

[0001] The present application relates to the field of display technologies, and particularly to a light-emitting component, a preparation method thereof, and a display substrate. Background Art

[0002] A display substrate includes a driving backplane and a plurality of light-emitting components connected to the driving backplane. Among them, the driving backplane can provide driving signals for the light-emitting components to make the light-emitting components emit light, thereby realizing display.

[0003] In related technologies, a light-emitting component includes a light-emitting unit, a color conversion unit, and a connection layer located between the light-emitting unit and the color conversion unit. Among them, the connection layer is used to connect the light-emitting unit and the color conversion unit, and the light emitted by the light-emitting unit can be emitted after passing through the color conversion unit.

[0004] However, in related technologies, the uniformity of the connection layer in the light-emitting component is poor, which leads to a poor yield of the light-emitting component. Summary of the Invention

[0005] The present application provides a light-emitting component, a preparation method thereof, and a display substrate, which can solve the problem of poor yield of the light-emitting component in related technologies. The technical solutions are as follows:

[0006] On the one hand, a light-emitting component is provided, and the light-emitting component includes: a substrate, a color conversion unit, a light-emitting unit, and a connection layer;

[0007] The color conversion unit is located on one side of the substrate, the light-emitting unit is located on the side of the color conversion unit away from the substrate, the connection layer is located between the color conversion unit and the light-emitting unit, and the connection layer is used to connect the color conversion unit and the light-emitting unit;

[0008] Among them, the connection layer includes: a first connection portion, and the first connection portion includes a first connection base material and a plurality of particle structures located in the first connection base material.

[0009] Optionally, the percentage range of the distance between at least part of the particle structure and the light-emitting unit on the side close to the light-emitting unit to the thickness of the first connection base material, and the percentage range of the distance between the side of the particle structure away from the light-emitting unit and the color conversion unit to the thickness of the first connection base material are both in the range of 2.78% to 22.2%.

[0010] Optionally, the side of the light-emitting unit close to the color conversion unit includes a plurality of pits;

[0011] In at least part of the particle structures, a part of one particle structure is located in the pit, and the other part is located outside the pit.

[0012] Optionally, the light-emitting unit includes a light-emitting region and a non-light-emitting region. The orthographic projection of the first connection portion on the substrate overlaps with the orthographic projection of the non-light-emitting region on the substrate, and there is at least a partially non-overlapping region with the orthographic projection of the light-emitting region on the substrate;

[0013] The connection layer further includes a second connection portion. The orthographic projection of the second connection portion on the substrate overlaps with the orthographic projection of the light-emitting region on the substrate. The second connection portion includes a second connection base material and does not include the particle structure. A part of the second connection base material is located in the pit, and another part of the second connection base material is located outside the pit.

[0014] Optionally, the shape of the pit is conical, and the area of the orthographic projection of the side of the pit away from the color conversion unit on the substrate is smaller than the area of the orthographic projection of the side of the pit close to the color conversion unit on the substrate;

[0015] Wherein, there is a gap between the sides of adjacent pits close to the color conversion unit, and the gap is smaller than the radius of the minimum circumscribed sphere of the particle structure.

[0016] Optionally, the center of gravity of the particle structure is located on the side of the light-emitting unit close to the color conversion unit and outside the pit.

[0017] Optionally, the relationship between the radius R of the minimum circumscribed sphere of the particle structure, the depth H1 of the pit, the distance H2 between the center of the particle structure and the side of the light-emitting unit close to the color conversion unit, the width L1 of the side of the pit close to the color conversion unit, and the cone angle α of the pit satisfies:

[0018]

[0019] Optionally, the orthographic projections of the multiple particle structures on the substrate do not overlap.

[0020] Optionally, the thickness of the connection layer is in the range of 1.6 micrometers to 2.0 micrometers.

[0021] Optionally, the material of the first connection base material is epoxy resin, and the material of the particle structure is at least one of silicate glass, borate glass, silicon dioxide, sodium chloride, polycarbonate, and cycloolefin polymer;

[0022] The material of the first connection base material is silicone resin, and the material of the particle structure is at least one of silicate glass, borate glass, silicon dioxide, calcium fluoride, lithium fluoride, sodium chloride, polymethyl methacrylate, polycarbonate, and cycloolefin polymer.

[0023] Optionally, the mass percentage of the particle structure in the first connecting portion ranges from 1.5% to 22%.

[0024] Optionally, the light-emitting unit includes a plurality of sub-light-emitting units, and the plurality of sub-light-emitting units include a first sub-light-emitting unit, a second sub-light-emitting unit, and a third sub-light-emitting unit;

[0025] The color conversion unit includes a plurality of color conversion portions, and the plurality of color conversion portions include a first color conversion portion corresponding to the first sub-light-emitting unit, a second color conversion portion corresponding to the second sub-light-emitting unit, and a third color conversion portion corresponding to the third sub-light-emitting unit;

[0026] Wherein, the color of the light emitted by the first sub-light-emitting unit after passing through the first color conversion portion is a first color, the color of the light emitted by the second sub-light-emitting unit after passing through the second color conversion portion is a second color, the color of the light emitted by the third sub-light-emitting unit after passing through the third color conversion portion is a third color, and the first color, the second color, and the third color are different from each other.

[0027] Optionally, the sub-light-emitting unit includes: a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked in sequence along a direction away from the substrate, the first semiconductor layer includes a first semiconductor portion, and the second semiconductor layer includes a second semiconductor portion; the sub-light-emitting unit further includes:

[0028] A connection electrode connected to the first semiconductor portion;

[0029] An insulating layer including a first via and a second via, the first via exposes at least a part of the connection electrode, the second via corresponds to the sub-light-emitting unit, and the second via exposes at least a part of the second semiconductor layer of the corresponding sub-light-emitting unit;

[0030] A first electrode connected to the connection electrode through the first via;

[0031] And a second electrode located on a side of the sub-light-emitting unit away from the substrate and electrically connected to the second semiconductor layer in the sub-light-emitting unit.

[0032] Optionally, the first semiconductor layers of the plurality of sub-light-emitting units are a common film layer, and the first semiconductor layer includes: the first semiconductor portion and a plurality of second semiconductor portions corresponding to the plurality of sub-light-emitting units; the light-emitting layer of the sub-light-emitting unit is connected to the corresponding second semiconductor portion.

[0033] Optionally, the first semiconductor layer includes a first sub-layer and a second sub-layer stacked in a direction away from the substrate; the material of the first sub-layer is a gallium nitride buffer layer, and the material of the second sub-layer is N-type gallium nitride;

[0034] The material of the light-emitting layer is a multi-quantum well, and the material of the second semiconductor layer is P-type gallium nitride.

[0035] Optionally, the color conversion unit includes:

[0036] A light-shielding layer having a plurality of light-transmitting holes, the plurality of light-transmitting holes including: a first light-transmitting hole, a second light-transmitting hole, and a third light-transmitting hole, the first light-transmitting hole being correspondingly arranged with the first sub-light-emitting unit, the second light-transmitting hole being correspondingly arranged with the second sub-light-emitting unit, and the third light-transmitting hole being correspondingly arranged with the third sub-light-emitting unit;

[0037] A plurality of light-filtering units, the plurality of light-filtering units including: a first light-filtering unit, a second light-filtering unit, and a third light-filtering unit, the orthographic projection of the first light-filtering unit on the substrate intersects with the orthographic projection of the first light-transmitting hole on the substrate and is correspondingly arranged with the first sub-light-emitting unit, the orthographic projection of the second light-filtering unit on the substrate intersects with the orthographic projection of the second light-transmitting hole on the substrate and is correspondingly arranged with the second sub-light-emitting unit, and the orthographic projection of the third light-filtering unit on the substrate intersects with the orthographic projection of the third light-transmitting hole on the substrate and is correspondingly arranged with the third sub-light-emitting unit;

[0038] A defining dam layer including a plurality of opening regions, the plurality of opening regions including: a first opening region, a second opening region, and a third opening region, the orthographic projection of the first opening region on the substrate intersects with the orthographic projection of the first light-transmitting hole on the substrate and is correspondingly arranged with the first sub-light-emitting unit, the orthographic projection of the second opening region on the substrate intersects with the orthographic projection of the second light-transmitting hole on the substrate and is correspondingly arranged with the second sub-light-emitting unit, and the orthographic projection of the third opening region on the substrate intersects with the orthographic projection of the third light-transmitting hole on the substrate and is correspondingly arranged with the third sub-light-emitting unit;

[0039] Wherein, the first color conversion part is disposed in the first opening region, the second color conversion part is disposed in the second opening region, and the third color conversion part is disposed in the third opening region.

[0040] Optionally, the light-emitting component is a light-emitting chip.

[0041] On the other hand, a method for manufacturing a light-emitting component is provided, the method including:

[0042] Obtain a color conversion substrate, where the color conversion substrate includes a substrate and a color conversion unit located on one side of the substrate;

[0043] Obtain an initial light-emitting substrate, where the initial light-emitting substrate includes a first temporary substrate and a light-emitting unit located on one side of the first temporary substrate;

[0044] Obtain a light-emitting substrate, where obtaining the light-emitting substrate includes: forming a second temporary substrate on a side of the light-emitting unit away from the first temporary substrate, and peeling the first temporary substrate from the light-emitting unit;

[0045] Connect the light-emitting unit in the light-emitting substrate and the color conversion unit in the color conversion substrate using a connection layer, where the connection layer includes: a first connection portion, and the first connection portion includes a first connection base material and a plurality of particle structures located within the first connection base material;

[0046] Peel the second temporary substrate.

[0047] Optionally, a surface of the first temporary substrate close to the light-emitting unit includes a plurality of protrusions, and a side of the light-emitting unit close to the first temporary substrate includes a plurality of pits, and the plurality of pits in the light-emitting unit are formed based on the plurality of protrusions.

[0048] In another aspect, a display substrate is provided, where the display substrate includes a driving backplane and a plurality of light-emitting components as described in the above aspect; the driving backplane is used to carry the light-emitting components and provide driving signals to the light-emitting components.

[0049] The beneficial effects brought by the technical solution provided in this application at least include:

[0050] This application provides a light-emitting component, a preparation method thereof, and a display substrate. The light-emitting component includes a substrate, a color conversion unit, a light-emitting unit, and a connection layer located between the color conversion unit and the light-emitting unit. Since the first connection portion of the connection layer includes a first connection base material and particle structures located within the first connection base material, the material consumption of the first connection base material can be reduced, and the shrinkage rate after curing of the material of the first connection base material can be lowered. And the particle structures can be used as spacers between the color conversion unit and the light-emitting unit, and can play a certain supporting role for the color conversion unit and the light-emitting unit, and can ensure the thickness uniformity of the color conversion unit and the light-emitting unit after bonding through the connection layer, and improve the yield of the light-emitting component. Description of the Drawings

[0051] To more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0052] Figure 1 is a schematic structural diagram of a light-emitting component provided by an embodiment of the present application;

[0053] Figure 2 is a schematic structural diagram of another light-emitting component provided by an embodiment of the present application;

[0054] Figure 3 is Figure 2 a schematic diagram of a light-emitting unit and a particle structure in the light-emitting component shown;

[0055] Figure 4 is a schematic structural diagram of yet another light-emitting component provided by an embodiment of the present application;

[0056] Figure 5 is a schematic layout diagram of a plurality of sub-light-emitting units provided by an embodiment of the present application;

[0057] Figure 6 is a schematic structural diagram of still another light-emitting component provided by an embodiment of the present application;

[0058] Figure 7 is a flowchart of a preparation method of a light-emitting component provided by an embodiment of the present application;

[0059] Figure 8 is a structural flowchart of forming a color conversion substrate provided by an embodiment of the present application;

[0060] Figure 9 is a schematic diagram of forming a first semiconductor thin film, a light-emitting thin film, a second semiconductor thin film, and a current spreading thin film on a first temporary substrate provided by an embodiment of the present application;

[0061] Figure 10 is a schematic diagram of forming a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a current spreading layer provided by an embodiment of the present application;

[0062] Figure 11 is a schematic diagram of forming a connection electrode provided by an embodiment of the present application;

[0063] Figure 12 is a schematic diagram of forming an insulating layer provided by an embodiment of the present application;

[0064] Figure 13It is a schematic diagram of forming a first electrode and a second electrode provided by an embodiment of the present application;

[0065] Figure 14 It is a schematic diagram of forming a second temporary substrate provided by an embodiment of the present application;

[0066] Figure 15 It is a schematic diagram of peeling off a first temporary substrate provided by an embodiment of the present application;

[0067] Figure 16 It is a schematic diagram of bonding and connecting a light-emitting unit and a color conversion unit provided by an embodiment of the present application;

[0068] Figure 17 It is a schematic diagram of peeling off a second temporary substrate provided by an embodiment of the present application;

[0069] Figure 18 It is a schematic diagram of the structure of a display substrate provided by an embodiment of the present application;

[0070] Figure 19 It is a schematic diagram of a partial cross-section of a display substrate provided by an embodiment of the present application. Detailed implementation manners

[0071] To make the objectives, technical solutions, and advantages of the present application clearer, the following will further describe the embodiments of the present application in detail with reference to the accompanying drawings.

[0072] Micro light-emitting diodes (MLEDs) are a general term for Mini LEDs and Micro LEDs. Mini LEDs, also known as sub-millimeter light-emitting diodes, are an improved version based on traditional LED backlights. Micro LEDs are the miniaturization and matrix technology of LEDs, which not only have the characteristics of high efficiency and high brightness of inorganic LEDs, but also have the energy-saving feature of self-luminescence without a light source. Compared with traditional display technologies, MLEDs have become the vane for the hardware upgrade of consumer electronics with their advantages of long lifespan, high color gamut, high brightness, and low power consumption.

[0073] Although MLEDs have the characteristics of low power consumption and high brightness compared with LCDs (liquid crystals) and OLEDs (organic light-emitting diodes), the low bonding yield of MLEDs has always been a point of concern in product development. Due to the mismatch in the thermal expansion coefficients of the inorganic layer and the organic bonding glue in the glue bonding process, the bonding technology has limitations.

[0074] Figure 1 It is a schematic diagram of the structure of a light-emitting component provided by an embodiment of the present application. Refer to Figure 1 , the light-emitting component 100 includes: a substrate 101, a color conversion unit 102, a light-emitting unit 103, and a connection layer 104.

[0075] The color conversion unit 102 is located on one side of the substrate 101, the light-emitting unit 103 is located on the side of the color conversion unit 102 away from the substrate 101, and the connection layer 104 is located between the color conversion unit 102 and the light-emitting unit 103. The connection layer 104 is used to connect the color conversion unit 102 and the light-emitting unit 103. The connection layer 104 includes: a first connection portion 1041, and the first connection portion 1041 includes a first connection base material 10411 and a plurality of particle structures 10412 located within the first connection base material 10411.

[0076] In the embodiment of the present application, a composite material is formed by using the first connection base material 10411 and a plurality of particle structures 10412, which can reduce the material consumption of the first connection base material 10411 and reduce the shrinkage rate of the first connection base material 10411 after curing. Moreover, the particle structures 10412 can be used as spacers between the color conversion unit 102 and the light-emitting unit 103, and can play a certain supporting role for the color conversion unit 102 and the light-emitting unit 103, and can ensure the thickness uniformity of the color conversion unit 102 and the light-emitting unit 103 after bonding through the connection layer 104, thereby improving the yield of the light-emitting component 100.

[0077] In summary, the embodiment of the present application provides a light-emitting component, which includes a substrate, a color conversion unit, a light-emitting unit, and a connection layer located between the color conversion unit and the light-emitting unit. Since the first connection portion of the connection layer includes a first connection base material and particle structures located within the first connection base material, the material consumption of the first connection base material can be reduced, and the shrinkage rate of the first connection base material after curing can be reduced. Moreover, the particle structures can be used as spacers between the color conversion unit and the light-emitting unit, and can play a certain supporting role for the color conversion unit and the light-emitting unit, and can ensure the thickness uniformity of the color conversion unit and the light-emitting unit after bonding through the connection layer, thereby improving the yield of the light-emitting component.

[0078] Optionally, the connection layer can be obtained by spin coating or printing and then curing. The curing method can adopt the method of heating and applying pressure to bond the color conversion unit and the light-emitting unit. At the same time, designing particle structures in the connection layer can also improve the reinforcement effect of the connection layer and improve the alignment accuracy before and after temperature rise and fall.

[0079] In the embodiment of the present application, a first connecting substrate 10411 may be provided between the particle structure 10412 and the light-emitting unit 103, and between the particle structure 10412 and the color conversion unit 102. That is, the particle structure 10412 does not directly contact the light-emitting unit 103 and the color conversion unit 102. When the light-emitting unit 103 and the color conversion unit 102 are bonded, by controlling the magnitude of the bonding force, direct contact between the particle structure 10412 and the light-emitting unit 103 and the color conversion unit 102 is avoided, thereby preventing the particle structure 10412 from cracking and ensuring the integrity of the particle structure 10412.

[0080] Optionally, the percentage range of the distance between at least part of the particle structure 10412 and the light-emitting unit 103 on the side close to the light-emitting unit 103 and the thickness of the first connecting substrate 10411, and the percentage range of the distance between at least part of the particle structure 10412 and the color conversion unit 102 on the side close to the color conversion unit 102 and the thickness of the first connecting substrate 10411 are both in the range of 2.78% to 22.2%. For example, it can be 3%, 5%, 10%, 12%, 15%, 18%, 20%, 22%, and so on.

[0081] Exemplarily, at least part of the particle structure 10412 may be the particle structure 10412 among the multiple particle structures 10412 that is greater than or equal to the target ratio. For example, when the target ratio is 95%, at least part of the particle structure 10412 may be 95% or more of the particle structures among the multiple particle structures 10412. That is, the percentage range of the distance between at least 95% of the particle structures among the multiple particle structures 10412 and the light-emitting unit 103 on the side close to the light-emitting unit 103 and the thickness of the first connecting substrate 10411, and the percentage range of the distance between the particle structure 10412 and the color conversion unit 102 on the side close to the color conversion unit 102 and the thickness of the first connecting substrate 10411 are both in the range of 2.78% to 22.2%.

[0082] Figure 2 It is a schematic structural diagram of another light-emitting component provided by the embodiment of the present application. Figure 3 is Figure 2 A partial schematic diagram of the light-emitting unit and the particle structure shown. Refer to Figure 2 and Figure 3 , on the side of the light-emitting unit 103 close to the color conversion unit 102, there are a plurality of pits 103a. In at least part of the particle structure 10412, a part of a particle structure is located inside the pit 103a, and the other part is located outside the pit 103a. For example, a part of any particle structure 10412 is located inside the pit 103a, and the other part is located outside the pit 103a. The first connecting substrate 10411 is at least located between adjacent particle structures 10412.

[0083] Since one side of the light-emitting unit 103 close to the color conversion unit 102 includes a plurality of pits 103a, during the alignment bonding process of the color conversion unit 102 and the light-emitting unit 103, a part of the particle structure 10412 can sink into the pits 103a, ensuring that the color conversion unit 102 and the light-emitting unit 103 will not relatively slip again after alignment bonding, and improving the alignment accuracy before curing and the shrinkage accuracy of the material after curing of the first connection part 1041.

[0084] In the embodiment of the present application, the material of the first connection substrate 10411 in the first connection part 1041 can be a transparent adhesive material, and the first connection substrate 10411 can be obtained after the transparent adhesive material is cured. Since the transparent adhesive material will undergo an emulsification effect after mixing with inorganic materials, the transparent adhesive material will become opaque. Furthermore, in order to avoid affecting the light-emitting effect of the light-emitting unit 103, the material of the particle structure 10412 can be an organic material, or the first connection part 1041 with a particle structure 10412 mixed with inorganic materials is arranged in the non-light-emitting area F2 of the light-emitting unit 103, and the light-emitting area F1 of the light-emitting unit 103 is provided with the first connection part 1041 with a particle structure 10412 made of an organic material or the first connection part 1041 without a particle structure 10412.

[0085] Optionally, the light-emitting unit 103 includes a light-emitting area F1 and a non-light-emitting area F2. If the material of the particle structure 10412 included in the first connection part 1041 is an inorganic material, the orthographic projection of the first connection part 1041 on the substrate 101 overlaps with the orthographic projection of the non-light-emitting area F2 on the substrate 101, and there is at least a partially non-overlapping area with the orthographic projection of the light-emitting area F1 on the substrate 101. Exemplarily, the orthographic projection of the first connection part 1041 on the substrate 101 does not overlap with the orthographic projection of the light-emitting area F1 on the substrate 101. This can avoid affecting the light-emitting effect of the light-emitting area F1 due to the emulsification effect of the particle structure 10412 of the inorganic material on the connection adhesive material.

[0086] Furthermore, the connection layer 104 further includes a second connection part 1042, and the orthographic projection of the second connection part 1042 on the substrate 101 overlaps with the orthographic projection of the light-emitting area F1 on the substrate 101. The second connection part 1042 includes a second connection substrate 10421 and does not include a particle structure. A part of the second connection substrate 10421 is located in the pit 103a, and another part of the second connection substrate 10421 is located outside the pit 103a.

[0087] Optionally, the material of the second connection substrate 10421 can be the same as the material of the first connection substrate 10411, or the material of the second connection substrate 10421 can be different from the material of the first connection substrate 10411.

[0088] In an embodiment of the present application, the first connecting portion 1041 and the second connecting portion 1042 can be connected to each other, and the thickness of the first connecting portion 1041 can be the same as that of the second connecting portion 1042 to ensure the uniformity of each part of the connecting layer.

[0089] In an embodiment of the present application, since light will refract at the interface of materials with different refractive indices, in order to avoid too much influence on the optical path of light due to the presence of the particle structure 10412, the refractive index of the material of the particle structure 10412 can be made close to the refractive index of the material of the first connecting base material 10411. Exemplarily, the difference between the refractive index of the material of the particle structure 10412 and the refractive index of the material of the first connecting base material 10411 can be less than or equal to 0.7. For example, the difference between the refractive index of the material of the particle structure 10412 and the refractive index of the material of the first connecting base material 10411 is 0.6, 0.5, 0.4, 0.3, 0.2 or 0.1.

[0090] Optionally, the material of the first connecting base material 10411 is at least one of epoxy resin and silicone resin. Among them, the viscosity range of the epoxy resin can be 20000 cp (centipoise) to 100000 cp.

[0091] The material of the particle structure 10412 is at least one of silicate glass, borate glass, silicon dioxide (SiO 2 ), calcium fluoride (CaF 2 ), lithium fluoride (LiF), sodium chloride (NaCl), polymethyl methacrylate, polycarbonate, and cycloolefin polymer. Optionally, the silicon dioxide (SiO 2 ) can be quartz, and the main component of quartz is silicon dioxide. The calcium fluoride (CaF 2 ) can be fluorite, and the main component of fluorite is calcium fluoride. The sodium chloride (NaCl) can be rock salt, and the main component of rock salt is sodium chloride.

[0092] Among them, the silicate glass and the borate glass can be optical glass materials. The refractive index range of the silicate glass is 1.45 to 1.60. The refractive index range of the borate glass is 1.45 to 1.65.

[0093] Quartz, fluorite, lithium fluoride, and rock salt can be optical crystal materials. The refractive index range of quartz (SiO2) is 1.458 to 1.542. The refractive index of fluorite (CaF2) can be 1.434. The refractive index range of lithium fluoride (LiF) is 1.391 to 1.394. The refractive index of rock salt (NaCl) is 1.544.

[0094] Polymethyl methacrylate, polycarbonate, and cycloolefin polymer can be optical plastic materials. The refractive index of polymethyl methacrylate (PMMA) can be 1.49, the refractive index of polycarbonate (PC) can be 1.58, and the refractive index of cycloolefin polymer (COP) can be 1.53.

[0095] The refractive index range of the epoxy resin is from 1.52 to 1.73. If the refractive index of the epoxy resin is 1.52, the refractive index of the particle structure 10412 can be greater than 1.52 and less than or equal to 2.1. If the refractive index of the epoxy resin is 1.73, the refractive index of the particle structure 10412 can be greater than 1.73 and less than or equal to 2.4.

[0096] The refractive index range of the silicone resin is from 1.3 to 1.54. If the refractive index of the silicone resin is 1.3, the refractive index of the particle structure 10412 can be greater than 1.3 and less than or equal to 1.7. If the refractive index of the silicone resin is 1.54, the refractive index of the particle structure 10412 is greater than 1.54 and less than or equal to 2.15.

[0097] Exemplarily, if the material of the first connecting substrate 10411 is epoxy resin, the material of the particle structure 10412 can be at least one of silicate glass, borate glass, quartz, rock salt, polycarbonate, and cycloolefin polymer. If the material of the first connecting substrate 10411 is silicone resin, the material of the particle structure 10412 can be at least one of silicate glass, borate glass, quartz, fluorite, lithium fluoride, rock salt, polymethyl methacrylate, polycarbonate, and cycloolefin polymer.

[0098] Optionally, the shape of the pit 103a is conical. The area of the positive projection of the side of the pit 103a away from the color conversion unit 102 on the substrate 101 is smaller than the area of the positive projection of the side of the pit 103a close to the color conversion unit 102 on the substrate 101. That is to say, the pit 103a can be an inverted conical pit provided on the side of the light-emitting unit 103 close to the color conversion unit 102. There is a gap L2 between the sides of adjacent pits 103a close to the color conversion unit 102, and the gap L2 is smaller than the radius R of the minimum circumscribed sphere of the particle structure 10412.

[0099] Since the gap between adjacent pits 103a is smaller than the radius R of the minimum circumscribed sphere of the particle structure 10412, when coating the transparent adhesive material provided with the particle structure 10412, it is possible to avoid the particle structure 10412 falling on the gap between adjacent pits 103a, but the particle structure 10412 can slide into the pits 103a, ensuring that the particle structure 10412 does not slip and improving the reliability of the alignment bonding.

[0100] ReferenceFigure 3 It can be seen that the center of gravity of the particle structure 10412 is located on the side of the light-emitting unit 103 close to the color conversion unit 102 and outside the pit 103a. Thereby, the width L1 of the side of the pit 103a close to the color conversion unit 102 can be made smaller than the diameter of the minimum circumscribed sphere of the particle structure 10412, ensuring that the particle structure 10412 is stuck in the pit 103a rather than completely located within the pit 103a. That is to say, the particle structure 10412 has a part protruding from the surface of the light-emitting unit 103, and thus the particle structure 10412 can act as a spacer to play a certain supporting role in the bonding of the color conversion unit 102 and the light-emitting unit 103.

[0101] In the embodiment of the present application, the relationship among the radius R of the minimum circumscribed sphere of the particle structure 10412, the depth H1 of the pit 103a, the distance H2 between the center of the particle structure 10412 and the side of the light-emitting unit 103 close to the color conversion unit 102, the width L1 of the side of the pit 103a close to the color conversion unit 102, and the cone angle α of the pit 103a satisfies:

[0102]

[0103] Among them, after the pit 103a on the side of the light-emitting unit 103 close to the color conversion unit 102 is prepared, each dimensional parameter of the pit 103a can be a known quantity. For example, in the above formulas (1) and (2), the depth H1 of the pit 103a, the width L1 of the side of the pit 103a close to the color conversion unit 102, and the cone angle α of the pit 103a can be known quantities, while the radius R of the particle structure 10412 and the distance H2 between the center of the particle structure 10412 and the side of the light-emitting unit 103 close to the color conversion unit 102 can be unknown quantities.

[0104] Therefore, after the pit 103a on the side of the light-emitting unit 103 close to the color conversion unit 102 is prepared, the radius R of the minimum circumscribed sphere of the particle structure 10412 and the distance H2 between the center of the minimum circumscribed sphere of the particle structure 10412 and the side of the light-emitting unit 103 close to the color conversion unit 102 can be determined according to the depth H1 of the pit 103a, the width L1 of the side of the pit 103a close to the color conversion unit 102, and the cone angle α of the pit 103a. Furthermore, a suitable material and a particle structure 10412 with a suitable size can be selected according to the calculated radius R, and the particle structure 10412 and the transparent adhesive material can be mixed to achieve the alignment bonding of the color conversion unit 102 and the light-emitting unit 103.

[0105] Optionally, the shape of the particle structure 10412 can be spherical, ellipsoidal, or a shape similar to a sphere or an ellipsoid. When the shape of the particle structure 10412 is spherical, the minimum circumscribed sphere of the particle structure 10412 can be the particle structure 10412 itself.

[0106] In the embodiment of the present application, taking the shape of the particle structure 10412 as spherical and in formula (1) as an example, the depth H1 of the pit 103a is 1.7 μm (micrometers), the width L1 of the side of the pit 103a close to the color conversion unit 102 is 2.14 μm, and the cone angle α of the pit 103a is 64.37°. According to the above formula (1) and formula (2), the radius R of the minimum circumscribed sphere of the particle structure 10412 is calculated to be 1.2 μm, and the distance H2 between the center of the minimum circumscribed sphere of the particle structure 10412 and the side of the light-emitting unit 103 close to the color conversion unit 102 is 0.54 μm.

[0107] Optionally, the thickness of the connection layer 104 is in the range of 1.6 μm to 2.0 μm. For example, the thickness of the connection layer 104 can be 1.8 μm. When the thickness of the connection layer 104 is in this range, it matches the best thickness simulated optically, ensuring the optical effect of the light-emitting component.

[0108] Exemplarily, the thickness H of the connection layer 104 can generally satisfy: H = R + H2 = 1.74 μm ≈ 1.8 μm. The thickness H of the connection layer 104 can be called the cell thickness of the light-emitting component. Since the range of the cell thickness H is 1.6 μm to 2.0 μm (for example, 1.8 μm), which matches the best cell thickness simulated optically, this embodiment can not only ensure the thickness uniformity of the connection layer 104, but also ensure the best optical effect of the cell thickness.

[0109] In the embodiment of the present application, after the pits 103a on the side of the light-emitting unit 103 close to the color conversion unit 102 are prepared, the interval L2 between the adjacent pits 103a on the side close to the color conversion unit 102 can also be a known quantity. For example, L2 = 0.354 μm.

[0110] In the embodiment of the present application, refer to Figure 4, the light-emitting unit 103 may include a plurality of sub-light-emitting units 1031, and the plurality of sub-light-emitting units 1031 include a first sub-light-emitting unit 1031a, a second sub-light-emitting unit 1031b, and a third sub-light-emitting unit 1031c. Correspondingly, the color conversion unit 102 includes a plurality of color conversion parts 1021, and the plurality of color conversion parts 1021 include a first color conversion part 1021a corresponding to the first sub-light-emitting unit 1031a, a second color conversion part 1021b corresponding to the second sub-light-emitting unit 1031b, and a third color conversion part 1021c corresponding to the third sub-light-emitting unit 1031c.

[0111] The color of the light emitted by the first sub-light-emitting unit 1031a after passing through the first color conversion part 1021a is the first color, the color of the light emitted by the second sub-light-emitting unit 1031b after passing through the second color conversion part 1021b is the second color, and the color of the light emitted by the third sub-light-emitting unit 1031c after passing through the third color conversion part 1021c is the third color. The first color, the second color, and the third color are different from each other.

[0112] Exemplarily, the first color is red (R), the second color is green (G), and the third color is blue (B). For example, the light-emitting component can be an RGB triad light-emitting component. Optionally, the first sub-light-emitting unit 1031a and the first color conversion part 1021a can form a first pixel, and the first pixel can be a red pixel R. The second sub-light-emitting unit 1031b and the second color conversion part 1021b can form a second pixel, and the second pixel can be a green pixel G. The third sub-light-emitting unit 1031c and the third color conversion part 1021c can form a third pixel, and the third pixel can be a blue pixel B.

[0113] Taking the arrangement of the first sub-light-emitting unit 1031a, the second sub-light-emitting unit 1031b, and the third sub-light-emitting unit 1031c as Figure 5 the shown triangular arrangement as an example, assuming the size of the light-emitting component is 250μm * 250μm. The light-emitting area of the red pixel R and the light-emitting area of the blue pixel B are both 50μm * 50μm, and the light-emitting area of the green pixel G is twice that of the light-emitting area of the blue pixel B.

[0114] Taking the width L1 of the side of the pit 103a close to the color conversion unit 102 being 2.14μm, and there being a gap L2 = 0.354μm between the adjacent sides of the pit 103a close to the color conversion unit 102 as an example, the set pitch of the pit 103a is determined to be 2.14 + 0.354 ≈ 2.5μm.

[0115] Furthermore, the number of rows and columns of the pits 103a provided on the surface of the light-emitting unit 103 of the light-emitting component 100 close to the color conversion unit 102 are both: 250 μm ÷ 2.5 μm = 100. The total number of pits 103a provided on the surface of the light-emitting unit 103 of the light-emitting component 100 close to the color conversion unit 102 is: 100 rows * 100 columns = 10,000.

[0116] The number of rows and columns of the pits 103a provided corresponding to the light-emitting area of the red pixels of the light-emitting component 100 are both: 50 μm ÷ 2.5 μm = 20. The total number of pits 103a provided corresponding to the light-emitting area of the red pixels R is: 20 rows * 20 columns = 400. The total number of pits 103a provided corresponding to the light-emitting area of the blue pixels B is the same as the total number of pits 103a provided corresponding to the light-emitting area of the red pixels R, which is also 400. The total number of pits 103a provided corresponding to the light-emitting area of the green pixels G is twice the total number of pits 103a provided corresponding to the light-emitting area of the red pixels R, which is 800. That is to say, the total number of pits 103a provided corresponding to the light-emitting area F1 of the light-emitting component 100 is: 400 + 400 + 800 = 1,600.

[0117] If the material of the particle structure 10412 is an inorganic material, then in order to avoid the emulsification of the transparent adhesive material after mixing with the inorganic material, among the 10,000 pits 103a provided on the surface of the light-emitting unit 103 of the light-emitting component 100 close to the color conversion unit 102, the transparent adhesive material added with the particle structure 10412 cannot be used above the pits 103a in the light-emitting area F1, and only the transparent adhesive material added with the particle structure 10412 can be used above the pits 103a in the non-light-emitting area F2.

[0118] The total number of pits 103a provided corresponding to the non-light-emitting area F2 is: 10,000 - 1,600 = 8,400. Theoretically, each pit 103a in the non-light-emitting area F2 can be stuck with a particle structure 10412.

[0119] When each pit 103a in the non-light-emitting area F2 is stuck with a particle structure 10412, calculate the added mass concentration percentage of the particle structure 10412 according to the following calculation process.

[0120] The total volume V total of the transparent adhesive material = the adhesive volume V1 in the pits 103a + the adhesive volume V on the side of the light-emitting unit 103 close to the color conversion unit 102. Taking the thickness of the adhesive on the side of the light-emitting unit 103 close to the color conversion unit 102 as 1.8 μm as an example, V2 = (250 * 250 - 50 * 50 * 2 (the light-emitting areas of the R pixels and B pixels) - 50 * 100 (the light-emitting area of the G pixels)) * 1.8 = 94,500 um 3(cubic micrometer). Taking the density of the glue as 1.3 mg / mm 3 (milligram per cubic millimeter) as an example, the mass of the glue m1 on the side of the light-emitting unit 103 close to the color conversion unit 102 is calculated as m1 = 94500 * 1.3 * 10 -9 = 122.85 ng (nanogram).

[0121] The volume of the glue V1 in the pit 103a = 1 / 3 * π * r 2 * h = 1 / 3 * 3.14 * 1.07 2 (half of L1) * 1.7 (H1) * 8400 = 17120.81 um 3 . The mass of the glue m2 in the pit 103a = 17112.13 * 1.3 * 10 -9 = 22.25 ng.

[0122] If the shape of the particle structure 10412 is spherical, the volume of each particle structure 10412 V3 = 4 / 3 * π * r 3 = 4 / 3 * 3.14 * 1.2 3 = 7.238 um 3 , and the subsequent calculation takes the density of the particle structure 10412 as 2.33 mg / mm 3 as an example.

[0123] The total mass m of the particle structures 10412 in the light-emitting component 100 颗粒球 can satisfy: m 颗粒球 = 8400 * 7.238 * 2.33 * 10 -3 = 141.66 ng. If the particle structure 10412 is not set at the position where the particle structure 10412 is set, but a transparent glue material is set, then the total mass m of the set glue 胶球 can satisfy: m 胶球 = 8400 * 7.238 * 1.3 * 10 -3 = 79.04 ng.

[0124] The added mass concentration percentage of the particle structure 10412 = m 颗粒球 / (m1 + m2 - m 胶球 + m 颗粒球 ) * 100% = 141.66 / (122.85 + 22.25 - 79.04 + 141.66) * 100% = 68.2%.

[0125] If the added mass concentration of the particle structure 10412 reaches 68.2%, it indicates that there is a relatively high doping of the particle structure 10412, which will in turn cause a sharp increase in the viscosity of the transparent adhesive material doped with the particle structure 10412 (almost in a non-flowing state), and higher requirements for the mixing process of the particle structure 10412 and the transparent adhesive material, as well as the dispensing process of the mixed adhesive material. Therefore, the addition amount of the particle structure 10412 can be reduced. For example, the addition amount of the particle structure 10412 can be 1 / 4 to 1 / 50 of the original addition amount.

[0126] If the addition amount of the particle structure 10412 is N times the original addition amount, then the added mass concentration percentage of the particle structure 10412 satisfies: 141.66*N / (122.85 + 22.25 - 79.05*N + 141.66*N)*100% = 141.66*N / (145.1 + 62.61*N)*100%. When the addition amount of the particle structure 10412 is 1 / 4 of the original addition amount, the value of N can be 0.25. According to the above calculation, the added mass concentration percentage of the particle structure 10412 can be obtained as 22%. When the addition amount of the particle structure 10412 is 1 / 50 of the original addition amount, the value of N can be 0.02. According to the above calculation, the added mass concentration percentage of the particle structure 10412 is 1.93%.

[0127] Exemplarily, the mass percentage of the particle structure 10412 in the first connection part 1041 is in the range of 1.5% to 22%. For example, it can be 3.5%, 5%, 10%, 15%, 20%, etc.

[0128] In the embodiment of the present application, referring to Figure 4 , the sub-light-emitting unit 1031 includes: a first semiconductor layer m1, a light-emitting layer m2, and a second semiconductor layer m3 that are sequentially stacked in a direction away from the substrate 101. The first semiconductor layer m1 includes a first semiconductor part, the light-emitting layer m2, and the second semiconductor layer m3 exposes the first semiconductor part of the first semiconductor layer m1. The second semiconductor layer m3 includes a second semiconductor part.

[0129] Referring to Figure 4, the sub-light-emitting unit 1031 further includes: a connection electrode m4, an insulating layer m5, a first electrode m6, and a second electrode m7. The connection electrode m4 is connected to the first semiconductor portion. The insulating layer m5 includes a first via hole G1 and a second via hole G2. At least a part of the connection electrode m4 is exposed by the first via hole G1. The second via hole G2 corresponds to the sub-light-emitting unit 1031, and at least a part of the second semiconductor layer m3 of the corresponding sub-light-emitting unit 1031 is exposed by the second via hole G2. The first electrode m6 is connected to the connection electrode m4 through the first via hole G1. The second connection is located on the side of the sub-light-emitting unit 1031 away from the substrate 101 and is electrically connected to the second semiconductor layer m3 in the sub-light-emitting unit 1031.

[0130] Optionally, the sub-light-emitting units 1031 in the light-emitting unit 103 are arranged at intervals. For example Figure 4 the first semiconductor layers m1 in the sub-light-emitting units 1031 are arranged at intervals. In this case, when the light-emitting unit 103 includes three sub-light-emitting units 1031, the three first semiconductor layers m1 of the three sub-light-emitting units 1031 respectively include a first semiconductor portion, and the three second semiconductor layers m3 of the three sub-light-emitting units 1031 respectively include a second semiconductor portion, that is, the light-emitting component includes three first semiconductor portions and three second semiconductor portions. Correspondingly, the light-emitting component includes three first electrodes m6 and three second electrodes m7.

[0131] Or, referring to Figure 6 , the first semiconductor layers m1 of the multiple sub-light-emitting units 1031 in the light-emitting unit 103 can be a common film layer. The first semiconductor layer m1 includes: a first semiconductor portion, and multiple second semiconductor portions corresponding to the multiple sub-light-emitting units 1031. The light-emitting layer m2 of the sub-light-emitting unit 1031 is connected to the second semiconductor portion. In this case, when the light-emitting unit 103 includes three sub-light-emitting units 1031, the first semiconductor layer m1 includes a first semiconductor portion shared by the three sub-light-emitting units 1031 and three second semiconductor portions corresponding to the three sub-light-emitting units 1031. Correspondingly, the light-emitting component 100 includes a shared first electrode m6 and three second electrodes m7.

[0132] In the embodiment of the present application, the first semiconductor layer m1 includes a first sub-layer m11 and a second sub-layer m12 stacked in a direction away from the substrate 101. The material of the first sub-layer m11 is a gallium nitride buffer layer (buffer-GaN), and the material of the second sub-layer m12 is an N-type gallium nitride (N-GaN). The material of the light-emitting layer m2 is a multi-quantum well (MQW), and the material of the second semiconductor layer m3 is a P-type gallium nitride (P-GaN).

[0133] Optionally, a plurality of pits 103a provided on the side of the light-emitting unit 103 close to the color conversion unit 102 may be located in the first sub-layer m11 of the first semiconductor layer m1. The pits 103a will not be located in the second sub-layer m12 of the first semiconductor layer m1, so the light-emitting effect of the sub-light-emitting unit 1031 will not be affected.

[0134] In the embodiment of the present application, with reference to Figure 4 and Figure 6 , the sub-light-emitting unit 1031 further includes: a current diffusion layer m8 sequentially stacked on the side of the second semiconductor layer m2 away from the substrate. Optionally, the material of the current diffusion layer m8 is indium tin oxide (ITO). By designing the current diffusion layer m8, it is beneficial to the transport of holes and improves the electrical performance of the light-emitting component 100.

[0135] In the embodiment of the present application, the color conversion unit 102 may include a light-shielding layer 1022, a light-filtering unit 1023, a defining dam layer 1024, and a color conversion portion 1021. The light-shielding layer 1022 has a plurality of light-passing holes K, and the number of the light-passing holes K may correspond to the number of sub-light-emitting units 1031 included in the light-emitting component 100. The number of the light-filtering units 1023 may also correspond to the number of sub-light-emitting units 1031 included in the light-emitting component 100. The defining dam layer 1024 includes a plurality of opening regions Q, and the number of the opening regions Q may correspond to the number of sub-light-emitting units 1031 included in the light-emitting component 100. The number of the color conversion portions 1021 may also correspond to the number of sub-light-emitting units 1031 included in the light-emitting component 100.

[0136] Exemplarily, taking the light-emitting unit 103 in the light-emitting component 100 including a first sub-light-emitting unit 1031a, a second sub-light-emitting unit 1031b, and a third sub-light-emitting unit 1031c as an example. The plurality of light-passing holes K of the light-shielding layer 1022 include a first light-passing hole K1, a second light-passing hole K2, and a third light-passing hole K3. The first light-passing hole K1 is correspondingly arranged with the first sub-light-emitting unit 1031a, the second light-passing hole K2 is correspondingly arranged with the second sub-light-emitting unit 1031b, and the third light-passing hole K3 is correspondingly arranged with the third sub-light-emitting unit 1031c.

[0137] Optionally, the orthographic projection of each light-passing hole K on the substrate 101 may intersect with the orthographic projection of the light-emitting layer m2 of the corresponding sub-light-emitting unit 1031 on the substrate 101. For example, the orthographic projection of the light-emitting layer m2 of the sub-light-emitting unit 1031 on the substrate 101 may be located within the orthographic projection of the corresponding light-passing hole K on the substrate 101.

[0138] Optionally, the orthographic projection of the first light-transmitting aperture K1 on the substrate 101 may overlap with the orthographic projection of the light-emitting layer m2 of the first sub-light-emitting unit 1031a on the substrate 101. Exemplarily, the orthographic projection of the light-emitting layer m2 of the first sub-light-emitting unit 1031a on the substrate 101 is located within the orthographic projection of the first light-transmitting aperture K1 on the substrate 101.

[0139] The orthographic projection of the second light-transmitting aperture K2 on the substrate 101 may overlap with the orthographic projection of the light-emitting layer m2 of the second sub-light-emitting unit 1031b on the substrate 101. Exemplarily, the orthographic projection of the light-emitting layer m2 of the second sub-light-emitting unit 1031b on the substrate 101 is located within the orthographic projection of the second light-transmitting aperture K2 on the substrate 101.

[0140] The orthographic projection of the third light-transmitting aperture K3 on the substrate 101 may overlap with the orthographic projection of the light-emitting layer m2 of the third sub-light-emitting unit 1031c on the substrate 101. Exemplarily, the orthographic projection of the light-emitting layer m2 of the third sub-light-emitting unit 1031c on the substrate 101 is located within the orthographic projection of the third light-transmitting aperture K3 on the substrate 101.

[0141] The defining dam layer 1024 in the color conversion unit 102 may be located on the side of the light-shielding layer 1022 away from the substrate 101. The defining dam layer 1024 may have a plurality of opening regions Q corresponding one-to-one to the plurality of light-transmitting apertures K, and these opening regions Q may also correspond one-to-one to the light-emitting layers m2 of the plurality of sub-light-emitting units 1031. Here, the orthographic projection of each opening region Q in the defining dam layer 1024 on the substrate 101 may overlap with the orthographic projection of the corresponding light-transmitting aperture K on the substrate 101, and may overlap with the orthographic projection of the light-emitting layer m2 of the corresponding sub-light-emitting unit 1031 on the substrate 101. For example, the light-emitting sides of the light-emitting layers m2 in the sub-light-emitting units 1031 may all face the corresponding opening regions Q, and the orthographic projection of the light-emitting layer m2 of each sub-light-emitting unit 1031 on the substrate 101 may be located within the orthographic projection of the corresponding opening region Q on the substrate 101. The orthographic projection of each opening region Q in the defining dam layer 1024 on the substrate 101 may be located within the orthographic projection of the corresponding light-transmitting aperture K on the substrate 101.

[0142] The plurality of opening regions Q in the defining dam layer 1024 may include: a first opening region Q1, a second opening region Q2, and a third opening region Q3. Among them, the first opening region Q1 may be disposed opposite to the light-emitting layer m2 of the first sub-light-emitting unit 1031a, the second opening region Q2 may be disposed opposite to the light-emitting layer m2 of the second sub-light-emitting unit 1031b, and the third opening region Q3 may be disposed opposite to the light-emitting layer m2 of the third sub-light-emitting unit 1031c.

[0143] Optionally, the region enclosed by the outer contour of the dam layer 1024 is defined as a rectangle, and the shapes of the first opening region Q1, the second opening region Q2, and the third opening region Q3 are all rectangles.

[0144] The color conversion unit 102 includes a plurality of color conversion portions 1021. The plurality of color conversion portions 1021 may include: a first color conversion portion 1021a, a second color conversion portion 1021b, and a third color conversion portion 1021c. Among them, the first color conversion portion 1021a may be located within the first opening region Q1, the second color conversion portion 1021b may be located within the second opening region Q2, and the third color conversion portion 1021c may be located within the third opening region Q3.

[0145] In this case, the first light emitted by the light-emitting layer m2 of the first sub-light-emitting unit 1031a may be directed to the first color conversion portion 1021a, and the first color conversion portion 1021a may convert the first light emitted by the light-emitting layer m2 of the first sub-light-emitting unit 1031a into light of other colors. The first light emitted by the light-emitting layer m2 of the second sub-light-emitting unit 1031b may be directed to the second color conversion portion 1021b, and the second color conversion portion 1021b may convert the first light emitted by the light-emitting layer m2 of the second sub-light-emitting unit 1031b into light of another color. The first light emitted by the light-emitting layer m2 of the third sub-light-emitting unit 1031c may be directed to the third color conversion portion 1021c, and the first light may be transmitted through the third color conversion portion 1021c or may be converted by the third color conversion portion 1021c.

[0146] Exemplarily, the light-emitting assembly may have a red pixel R, a green pixel G, and a blue pixel B. The first light emitted by the light-emitting layer m2 of the first sub-light-emitting unit 1031a, the light-emitting layer m2 of the second sub-light-emitting unit 1031b, and the light-emitting layer m2 of the third sub-light-emitting unit 1031c all includes at least one of blue light and ultraviolet light.

[0147] The first color conversion portion 1021a is configured to convert the first light into red light. Exemplarily, the first color conversion portion 1021a includes red quantum dots that convert the first light into red light. Preferably, the first color conversion portion 1021a further includes scattering particles for scattering light. After the first light emitted by the light-emitting layer m2 of the first sub-light-emitting unit 1031a is directed to the first color conversion portion 1021a distributed within the first opening region Q1, the red quantum dots can convert the first light into red light, and the scattering particles can scatter the first light and the red light to ensure that more of the first light can be converted into red light by the red quantum dots, and can ensure that the emission angle of the converted red light is larger, so as to ensure a larger viewing angle of the display substrate 101 integrated with the light-emitting assembly. For this reason, the red pixel R in the light-emitting assembly may include: the first sub-light-emitting unit 1031a and the first color conversion portion 1021a.

[0148] The second color conversion unit 1021b is configured to convert the first light ray into green light. For example, the second color conversion unit 1021b includes green quantum dots that convert the first light ray into green light; preferably, the second color conversion unit 1021b further includes scattering particles for scattering light rays. Here, after the first light ray emitted from the light-emitting layer m2 of the second sub-light-emitting unit 1031b irradiates the second color conversion unit 1021b distributed in the second opening region Q2, the green quantum dots can convert the first light ray into green light, and the scattering particles can scatter the first light ray and the green light, so as to ensure that more of the first light rays can be converted into green light by the green quantum dots, and to ensure that the emission angle of the converted green light is relatively large, so as to ensure a relatively large viewing angle of the display substrate 101 integrated with the light-emitting component. Therefore, the green pixel G in the light-emitting component may include: the second sub-light-emitting unit 1031b and the second color conversion unit 1021b.

[0149] The third color conversion unit 1021c is configured to convert the first light ray into blue light or maintain blue light emission. For example, when the first light ray only includes blue light, the third color conversion unit 1021c may be a transparent part or the third color conversion unit 1021c may include blue quantum dots; among them, the transparent part is used for the direct transmission of the first light ray, and the blue quantum dots can be used to convert the first light ray into blue light with a wavelength different from that of the first light ray. Preferably, the third color conversion unit 1021c further includes scattering particles for scattering light rays. Here, after the first light ray emitted from the light-emitting layer m2 of the third sub-light-emitting unit 1031c irradiates the third color conversion unit 1021c distributed in the third opening region Q3, the scattering particles can scatter the first light ray, so as to ensure that the emission angle of the blue light is relatively large, and further ensure a relatively large viewing angle of the display substrate 101 integrated with the light-emitting component. Another example is that when the first light ray includes ultraviolet light, the third color conversion unit 1021c includes blue quantum dots that convert the first light ray into blue light, or the third color conversion unit 1021c is simultaneously distributed with scattering particles for scattering light rays and blue quantum dots for converting ultraviolet light into blue light. Here, after the first light ray emitted from the light-emitting layer m2 of the third sub-light-emitting unit 1031c irradiates the third color conversion unit 1021c distributed in the third opening region Q3, the blue quantum dots can convert the ultraviolet light in the first light ray into blue light, and the scattering particles can scatter the first light ray and the blue light, so as to ensure that more ultraviolet light is converted into blue light by the blue quantum dots, and to ensure that the emission angle of the converted blue light is relatively large, so as to ensure a relatively large viewing angle of the display substrate 101 integrated with the light-emitting component. Therefore, the blue pixel B in the light-emitting component may include: the third sub-light-emitting unit 1031c and the third color conversion unit 1021c.

[0150] In an embodiment of the present application, the color conversion unit 102 includes a plurality of filter units 1023. The plurality of filter units 1023 includes: a first filter unit 1023a, a second filter unit 1023b, and a third filter unit 1023c. The orthographic projection of the first filter unit 1023a on the substrate 101 overlaps with the orthographic projection of the first light passing hole K1 on the substrate 101, and is correspondingly arranged with the light emitting layer m2 of the first sub-light emitting unit 1031a. The orthographic projection of the second filter unit 1023b on the substrate 101 overlaps with the orthographic projection of the second light passing hole K2 on the substrate 101, and is correspondingly arranged with the light emitting layer m2 of the second sub-light emitting unit 1031b. The orthographic projection of the third filter unit 1023c on the substrate 101 overlaps with the orthographic projection of the third light passing hole K3 on the substrate 101, and is correspondingly arranged with the light emitting layer m2 of the third sub-light emitting unit 1031c.

[0151] Optionally, the first light rays emitted by the light emitting layer m2 of the first sub-light emitting unit 1031a, the light emitting layer m2 of the second sub-light emitting unit 1031b, and the light emitting layer m2 of the third sub-light emitting unit 1031c are all blue light. The first filter unit 1023a can be a red color resist block, and this red color resist block can transmit red light and absorb light of other colors. In this way, the light emitted from the first color conversion part 1021a can pass through the first filter unit 1023a and then be emitted, and the first filter unit 1023a can filter out light of other colors except red light to ensure that the red pixels R in the light emitting component can filter out the blue light component. It should be noted that in other possible implementation manners, the first filter unit 1023a can also be: a film layer for transmitting red light and reflecting blue light. In this way, after the light emitted from the first color conversion part 1021a is incident on the first filter unit 1023a, the red light in these light rays can pass through the first filter unit 1023a and then be emitted, while the blue light in these light rays can be reflected back to the first color conversion part 1021a by the first filter unit 1023a, so that the red quantum dots in the first color conversion part 1021a can excite this blue light into red light again. In this way, the excitation efficiency of the red quantum dots can be further improved.

[0152] For example, the first light rays emitted by the light-emitting layer m2 of the first sub-light-emitting unit 1031a, the light-emitting layer m2 of the second sub-light-emitting unit 1031b, and the light-emitting layer m2 of the third sub-light-emitting unit 1031c are all blue light. The second light-filtering unit 1023b can be a green color-resist block, and this green color-resist block can transmit green light and absorb light of other colors. In this way, the light rays emitted from the second color conversion part 1021b can pass through the second light-filtering unit 1023b and then be emitted, and the second light-filtering unit 1023b can filter out light of other colors except green light to ensure that the green pixels G in the light-emitting component can filter out the blue light component. It should be noted that in other possible implementation manners, the second light-filtering unit 1023b can also be a film layer for transmitting green light and reflecting blue light. In this way, after the light rays emitted from the second color conversion part 1021b are incident on the second light-filtering unit 1023b, the green light in these light rays can pass through the second light-filtering unit 1023b and then be emitted, while the blue light in these light rays can be reflected back to the second color conversion part 1021b by the second light-filtering unit 1023b, so that the green quantum dots in the second color conversion part 1021b can excite this blue light into green light again. In this way, the excitation efficiency of the green quantum dots can be further improved.

[0153] It should be noted that the film layer structures of the first light-filtering unit 1023a and the second light-filtering unit 1023b can be the same and can be prepared by the same process; for example, both the first light-filtering unit 1023a and the second light-filtering unit 1023b are film layers for transmitting red light and green light and reflecting blue light.

[0154] For example, the first light rays emitted by the light-emitting layer m2 of the first sub-light-emitting unit 1031a, the light-emitting layer m2 of the second sub-light-emitting unit 1031b, and the light-emitting layer m2 of the third sub-light-emitting unit 1031c are all blue light. The third light-filtering unit 1023c can be a blue color-resist block, and this blue color-resist block can transmit blue light and absorb light of other colors. In this way, the light rays emitted from the third color conversion part 1021c can pass through the third light-filtering unit 1023c and then be emitted, and the third light-filtering unit 1023c can filter out light of other colors except blue light to ensure that the blue pixels B in the light-emitting component can emit relatively pure blue light.

[0155] For example, the first light rays emitted by the light-emitting layer m2 of the first sub-light-emitting unit 1031a, the light-emitting layer m2 of the second sub-light-emitting unit 1031b, and the light-emitting layer m2 of the third sub-light-emitting unit 1031c are all blue light. The third light-filtering unit 1023c can be a transparent block, and this transparent block can transmit blue light.

[0156] It should be noted that, since the orthographic projection of each light filtering unit 1023 on the substrate 101 overlaps with the orthographic projection of the corresponding light passing hole K in the light shielding layer 1022 on the substrate 101, therefore, in the direction parallel to the extension plane of the substrate 101, a part of the light shielding layer 1022 is distributed between two adjacent light filtering units 1023. In this way, the light emitted from the side of a certain light filtering unit 1023 can be absorbed by the light shielding layer 1022, so that the light intensity of the light emitted from each sub-pixel to an adjacent sub-pixel can be ensured to be relatively low, and the probability of color crosstalk occurring in the light emitting component 100 can be effectively reduced.

[0157] Further, referring to Figure 4 and Figure 6 , the color conversion unit 102 includes a packaging layer 1025, and the packaging layer 1025 can be located on the side of the defining dam layer 1024 away from the substrate 101. The defining dam layer 1024, the color conversion part 1021 and the light filtering unit 1023 can be packaged through the packaging layer 1025 to prevent water and oxygen in the external environment from eroding the color conversion part 1021 or the light filtering unit 1023 after passing through the defining dam layer 1024, so that it can be ensured that the color conversion part 1021 can stably convert the color of the light, and the reliability of the color conversion part 1021 is relatively high.

[0158] In the embodiment of the present application, the light emitting component 100 can be a light emitting chip, or the light emitting component 100 can be a pixel unit in a display substrate.

[0159] To sum up, the embodiment of the present application provides a light emitting component, which includes a substrate, a color conversion unit, a light emitting unit, and a connection layer located between the color conversion unit and the light emitting unit. Since the first connection part of the connection layer includes a first connection base material and a particle structure located in the first connection base material, the material consumption of the first connection base material can be reduced, and the shrinkage rate after curing of the material of the first connection base material can be reduced. And the particle structure can be used as a spacer between the color conversion unit and the light emitting unit, and can play a certain supporting role for the color conversion unit and the light emitting unit, and can ensure the thickness uniformity of the color conversion unit and the light emitting unit after being bonded through the connection layer, and improve the yield of the light emitting component.

[0160] Figure 7 is a flowchart of a method for manufacturing a light emitting component provided by an embodiment of the present application. Referring to Figure 7 , the method includes:

[0161] Step S101, obtain a color conversion substrate.

[0162] In an embodiment of the present application, the color conversion substrate includes: a substrate 101, and a color conversion unit 102 located on one side of the substrate 101. The color conversion unit 102 includes: a light-shielding layer 1022, a defining dam layer 1024, a light filtering unit 1023, and a color conversion portion 1021. The light-shielding layer 1022 has a light-passing hole K, and the orthographic projection of the light filtering unit 1023 on the substrate 101 overlaps with the orthographic projection of the corresponding light-passing hole K on the substrate 101. The defining dam layer 1024 is located on the side of the light-shielding layer 1022 away from the substrate 101, and the defining dam layer 1024 has an opening area Q corresponding to the light-passing hole K, and the orthographic projection of the opening area Q on the substrate 101 overlaps with the orthographic projection of the corresponding light-passing hole K on the substrate 101. The color conversion portion 1021 is located within the opening area Q, and at least a part of the color conversion portion 1021 is configured to convert the color of the light entering the color conversion portion 1021.

[0163] Reference Figure 8 , the process of obtaining the color conversion substrate includes: forming a light-shielding layer (black BM layer) 1022 on the substrate 101; forming a light filtering unit 1023 within the light-passing hole K of the light-shielding layer 1021; forming a defining dam layer 1024 on the side of the light-shielding layer 1021 away from the substrate 101; forming a color conversion portion 1021 within the opening area Q of the defining dam layer 1024 by means of printing or exposure and development; forming a packaging layer 1025 on the side of the defining dam layer 1024 away from the substrate 101 by means of plasma enhanced chemical vapor deposition (PECVD) or atomic layer deposition (ALD) etc. Optionally, the material of the packaging layer 1025 may be silicon oxide (SiO) or silicon nitride (SiN).

[0164] Step S102, obtain an initial light-emitting substrate.

[0165] In an embodiment of the present application, the process of obtaining the initial light-emitting substrate includes:

[0166] Step S1021, form a first semiconductor thin film, a light-emitting thin film, a second semiconductor thin film, and a current diffusion thin film on one side of a first temporary substrate.

[0167] Among them, reference Figure 9 , the first semiconductor thin film, the light-emitting thin film, the second semiconductor thin film, and the current diffusion thin film are stacked in a direction away from the first temporary substrate. The first temporary substrate is a sapphire substrate or a silicon-based substrate. The material of the first semiconductor thin film may include N-type doped gallium nitride, the material of the light-emitting thin film may include multiple quantum wells, the material of the second semiconductor thin film may include P-type doped gallium nitride. The material of the current diffusion thin film may include indium tin oxide (ITO).

[0168] Optionally, the surface of the first temporary substrate may have a plurality of conical protrusions, and the first semiconductor thin film, the light-emitting thin film, the second semiconductor thin film, and the current spreading thin film may be sequentially formed on the surface of the first temporary substrate having the plurality of conical protrusions. The conical protrusions can be used to form a plurality of pits of the light-emitting unit close to the color conversion unit, and by providing a plurality of conical protrusions on the first temporary substrate, the lattice arrangement of the epitaxial material (the first semiconductor thin film) formed on the first temporary substrate can be changed, so that the longitudinal epitaxy of the GaN material becomes lateral epitaxy, which is beneficial to improving the optoelectronic efficiency.

[0169] The first temporary substrate may be a patterned sapphire substrate (PSS). Such a substrate is to grow a mask for dry etching on a planar sapphire substrate, then pattern the mask using a standard photolithography process, etch the sapphire substrate using inductively coupled plasma (ICP) etching technology, remove the mask, and then grow an epitaxial material using metal-organic chemical vapor deposition (MOCVD), so that the longitudinal epitaxy of the GaN material becomes lateral epitaxy.

[0170] The advantages of the light-emitting component prepared from the PSS substrate are as follows: compared with the epitaxial material grown on the planar sapphire, the epitaxial material grown on the PSS substrate has fewer defects and higher optoelectronic efficiency. The interface of the epitaxial material grown on the planar sapphire is flat, and the refractive index difference between the light-emitting surface and the external air is relatively large, and total reflection is likely to occur at the interface. The PSS substrate can break this plane and allow more light to be emitted.

[0171] Of course, the surface of the first temporary substrate may also be planar, that is, the first semiconductor thin film, the light-emitting thin film, the second semiconductor thin film, and the current spreading thin film may be sequentially formed on the plane of the first temporary substrate.

[0172] Step S1022: Use a mask process to etch the current spreading thin film, the second semiconductor thin film, the light-emitting thin film, and the first semiconductor thin film to obtain the first semiconductor layer, the light-emitting layer, the second semiconductor layer, and the current spreading layer of the light-emitting unit in the light-emitting unit.

[0173] Reference Figure 10 , the first semiconductor layer, the light-emitting layer, the second semiconductor layer, and the current spreading layer are sequentially stacked on the side away from the first temporary substrate.

[0174] Step S1023: Form a connection electrode.

[0175] Reference Figure 11, the connection electrode is located on the side of the first semiconductor layer away from the first temporary substrate and is connected to the first semiconductor layer.

[0176] Step S1024: Form an insulating layer.

[0177] Reference Figure 12 , the insulating layer includes a first via hole G1 and a second via hole G2. The first via hole exposes at least a part of the first semiconductor layer, and the second via hole exposes at least a part of the current spreading layer.

[0178] Step S1025: Form a first electrode and a second electrode.

[0179] Reference Figure 13 , the first electrode is connected to the first semiconductor layer through the first via hole G1, and the second electrode is connected to the second semiconductor layer through the second via hole G2 (the second electrode is connected to the second semiconductor layer through the current spreading layer).

[0180] Step S103: Obtain a light-emitting substrate.

[0181] In the embodiment of the present application, the process of obtaining the light-emitting substrate includes: Reference Figure 14 , a second temporary substrate is formed on the side of the light-emitting unit 103 away from the first temporary substrate. Wherein, the second temporary substrate can be connected to the light-emitting unit 103 by using a temporary adhesive material. Reference Figure 15 , the first temporary substrate is peeled off from the light-emitting unit 103. Optionally, the first temporary substrate can be removed by using a Laser Lift-off (LLO) process.

[0182] Step S104: Connect the light-emitting unit in the light-emitting substrate and the color conversion unit in the color conversion substrate by using a connection layer.

[0183] Reference Figure 16 , the connection layer is located between the light-emitting unit and the color conversion unit and is used to connect the light-emitting unit and the color conversion unit. The connection layer includes: a first connection portion 1041, and the first connection portion 1041 includes a first connection base material 10411 and a plurality of particle structures 10412 located in the first connection base material 10411.

[0184] In the embodiment of the present application, a composite material is formed by using a first connecting substrate 10411 and a plurality of particle structures 10412, which can reduce the material consumption of the first connecting substrate 10411 and reduce the shrinkage rate of the material of the first connecting substrate 10411 after curing. Moreover, the particle structure 10412 can be used as a spacer between the color conversion unit 102 and the light-emitting unit 103, which can play a certain supporting role for the color conversion unit 102 and the light-emitting unit 103, and can ensure the thickness uniformity of the color conversion unit 102 and the light-emitting unit 103 after bonding through the connecting layer 104, thereby improving the yield of the light-emitting component 100.

[0185] Step S105: Peel off the second temporary substrate.

[0186] Reference Figure 17 , after removing the second temporary substrate by using a laser lift-off process, a light-emitting component is obtained. Then, the substrate can be thinned. Using a thicker substrate during the preparation of the light-emitting component is beneficial to the processing of the light-emitting component, and finally thinning can be beneficial to the use of subsequent processes.

[0187] In the embodiment of the present application, the color conversion substrate may include color conversion units of a plurality of light-emitting components. The light-emitting substrate may also include light-emitting units of a plurality of light-emitting components. For example, both the color conversion substrate and the light-emitting substrate may be 4-inch circular substrates. In order to obtain independent light-emitting components, a laser cutting process can be used for cutting.

[0188] In summary, the embodiment of the present application provides a method for preparing a light-emitting component. The light-emitting component prepared by this method includes a substrate, a color conversion unit, a light-emitting unit, and a connecting layer located between the color conversion unit and the light-emitting unit. Since the first connecting portion of the connecting layer includes a first connecting substrate and a particle structure located in the first connecting substrate, the material consumption of the first connecting substrate can be reduced, and the shrinkage rate of the material of the first connecting substrate after curing can be reduced. Moreover, the particle structure can be used as a spacer between the color conversion unit and the light-emitting unit, which can play a certain supporting role for the color conversion unit and the light-emitting unit, and can ensure the thickness uniformity of the color conversion unit and the light-emitting unit after bonding through the connecting layer, thereby improving the yield of the light-emitting component.

[0189] Figure 18 is a schematic structural diagram of a display substrate provided by the embodiment of the present application. Reference Figure 18 , the display substrate includes a driving backplane 200 and the light-emitting component 100 provided in the above embodiment. Among them, the driving backplane 200 is used to carry the light-emitting component 100 and provide a driving signal to the light-emitting component 100.

[0190] Optionally, the light-emitting component 100 may be a light-emitting chip. Reference Figure 18, the multiple light-emitting components 100 in the display substrate are independently arranged, that is, the light-emitting components 100 are independent of each other, so that the repair and replacement of a single light-emitting component 100 can be realized. Optionally, the light-emitting component 100 can be an independent light-emitting chip, and different light-emitting components 100 are spaced apart. Exemplarily, different light-emitting components 100 are isolated by air.

[0191] Alternatively, the light-emitting component 100 can be a pixel unit in the display substrate. Refer to Figure 19 , multiple light-emitting components 100 (multiple pixel units) in the display substrate can share a substrate 101, and the connection layers 104 of the multiple light-emitting components 100 can be continuously distributed.

[0192] Optionally, the display substrate can be a display screen in a mobile phone, a laptop computer or a tablet computer, or can be an outdoor advertising screen.

[0193] Since the display substrate can have basically the same technical effects as the light-emitting components described in the previous embodiments, for the sake of simplicity, the technical effects of the display substrate are not described again here.

[0194] The present disclosure describes multiple embodiments, but the description is exemplary rather than restrictive, and it will be obvious to those of ordinary skill in the art that there can be more embodiments and implementation schemes within the scope of the embodiments described in the present disclosure. Although many possible feature combinations are shown in the drawings and discussed in the detailed description, many other combination ways of the disclosed features are also possible. Unless specifically restricted, any feature or element of any embodiment can be combined with any other feature or element in any other embodiment, or can replace any other feature or element in any other embodiment.

[0195] The present disclosure includes and contemplates combinations with features and elements known to those of ordinary skill in the art. The embodiments, features and elements already disclosed in the present disclosure can also be combined with any conventional features or elements to form unique inventive solutions defined by the claims. Any feature or element of any embodiment can also be combined with features or elements from other inventive solutions to form another unique inventive solution defined by the claims. Therefore, it should be understood that any feature shown and / or discussed in the present disclosure can be implemented alone or in any suitable combination. Therefore, the embodiments are not subject to other restrictions except those made according to the appended claims and their equivalents. In addition, various modifications and changes can be made within the scope of the protection of the appended claims.

[0196] In addition, when describing representative embodiments, the specification may have presented the method and / or process as a specific sequence of steps. However, to the extent that the method or process does not depend on the specific order of the steps described herein, the method or process should not be limited to the specific order of steps described. As those of ordinary skill in the art will understand, other step sequences are possible. Therefore, the specific order of steps set forth in the specification should not be construed as a limitation on the claims. In addition, the claims directed to the method and / or process should not be limited to performing their steps in the order written, as those skilled in the art can readily understand that these orders can vary and still remain within the spirit and scope of the embodiments of the present disclosure.

[0197] In the drawings, sometimes for clarity, the sizes of one or more constituent elements, the thicknesses of layers, or regions are exaggerated. In addition, the drawings schematically show ideal examples, and one mode of the present disclosure is not limited to the shapes, numerical values, etc. shown in the drawings.

[0198] The ordinal numbers such as "first", "second", "third", etc. in this specification are provided to avoid confusion of constituent elements and are not intended to limit in terms of quantity. "Plural" in the present disclosure means two or more.

[0199] The thickness range of the film layer in this specification from A to B is used to represent that the thickness is between A and B and includes the two endpoint values of A and B.

[0200] In this specification, for convenience, terms indicating orientation or positional relationship such as "middle", "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are used to describe the positional relationship of constituent elements with reference to the drawings, and are only for the convenience of describing this specification and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation on the present disclosure. The positional relationship of the constituent elements is appropriately changed according to the direction of the described constituent elements. Therefore, it is not limited to the terms described in the specification and can be appropriately replaced according to the situation.

[0201] In this specification, unless otherwise clearly specified and defined, the terms "mounted", "connected", and "coupled" shall be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate member, or the communication inside two elements. For those of ordinary skill in the art, the meanings of the above terms in the present disclosure can be understood according to the circumstances.

[0202] In this specification, "connection" includes cases where components are connected together through elements having a certain electrical effect. The "elements having a certain electrical effect" are not particularly limited as long as they can transmit electrical signals between the components to be connected. Examples of the "elements having a certain electrical effect" include not only electrodes and wirings, but also switching elements such as transistors, resistors, inductors, capacitors, and other elements having various functions.

[0203] In this specification, "parallel" means a state where the angle formed by two straight lines is -10° or more and 10° or less, and thus also includes a state where the angle is -5° or more and 5° or less. In addition, "perpendicular" means a state where the angle formed by two straight lines is 80° or more and 100° or less, and thus also includes a state where the angle is 85° or more and 95° or less.

[0204] In this specification, "film" and "layer" can be interchanged. For example, sometimes "conductive layer" can be changed to "conductive film". Similarly, sometimes "insulating film" can be changed to "insulating layer".

[0205] In this disclosure, "thickness" and "height" refer to the vertical distance between the surface on the side away from the substrate and the surface on the side close to the substrate of the film layer.

[0206] Shapes such as rectangles in this specification are not strictly defined and can be approximate rectangles, etc. There can be some small deformations caused by tolerances, and there can be chamfers, arc edges, and deformations, etc.

[0207] The "about" in this disclosure means that the limit is not strictly defined and allows values within the range of process and measurement errors.

[0208] The above are only optional embodiments of this application and are not intended to limit this application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of this application shall be included within the protection scope of this application.

Claims

1. A light emitting component, characterized in that: The light-emitting component includes: a substrate, a color conversion unit, a light-emitting unit, and a connecting layer; The color conversion unit is located at one side of the substrate, the light emitting unit is located at a side of the color conversion unit away from the substrate, the connection layer is located between the color conversion unit and the light emitting unit, and the connection layer is used to connect the color conversion unit and the light emitting unit; Wherein, the connection layer includes: a first connection part, and the first connection part includes a first connection substrate and a plurality of particle structures located in the first connection substrate.

2. The light emitting assembly according to claim 1, characterized in that: The percentage range of the distance between a side of at least part of the particle structure close to the light-emitting unit and the light-emitting unit as a percentage of the thickness of the first connecting substrate, and the percentage range of the distance between a side of the particle structure away from the light-emitting unit and the color conversion unit as a percentage of the thickness of the first connecting substrate are both in the range of 2.78% to 22.2%.

3. The light emitting assembly according to claim 1, characterized in that: The light emitting unit includes a plurality of pits on one side close to the color conversion unit; In at least some of the particle structures, a portion of one of the particle structures is located within the pit and another portion is located outside the pit.

4. The light emitting assembly according to claim 3, characterized in that: The light-emitting unit includes a light-emitting area and a non-light-emitting area, the orthographic projection of the first connecting portion on the substrate overlaps with the orthographic projection of the non-light-emitting area on the substrate, and at least partially does not overlap with the orthographic projection of the light-emitting area on the substrate; The connecting layer also includes a second connecting portion, the orthographic projection of the second connecting portion on the substrate overlaps with the orthographic projection of the light-emitting area on the substrate, the second connecting portion includes a second connecting substrate and does not include the particle structure, a portion of the second connecting substrate is located in the pit, and another portion of the second connecting substrate is located outside the pit.

5. The light emitting assembly according to claim 3, characterized in that: The shape of the concave pit is conical, and the area of ​​the orthographic projection of the side of the concave pit away from the color conversion unit on the substrate is smaller than the area of ​​the orthographic projection of the side of the concave pit close to the color conversion unit on the substrate; There is a gap between adjacent pits close to a side of the color conversion unit, and the gap is smaller than the radius of the smallest circumscribed sphere of the particle structure.

6. The light emitting assembly according to claim 3, characterized in that: The center of gravity of at least a portion of the particle structure is located on a side of the light-emitting unit close to the color conversion unit and outside the pit.

7. The light emitting assembly according to claim 5, characterized in that: The relationship between the radius R of the minimum circumscribed sphere of the particle structure, the depth H1 of the pit, the distance H2 between the center of the minimum circumscribed sphere of the particle structure and the side of the light-emitting unit close to the color conversion unit, the width L1 of the side of the pit close to the color conversion unit, and the cone angle α of the pit satisfies:

8. The light emitting assembly according to any one of claims 1 to 7, characterized in that: The orthographic projections of the plurality of particle structures on the substrate do not overlap.

9. The light emitting assembly according to any one of claims 1 to 7, characterized in that: The thickness of the connecting layer is in the range of 1.6 micrometers to 2.0 micrometers.

10. The light emitting assembly according to any one of claims 1 to 7, characterized in that: The material of the first connecting substrate is epoxy resin, and the material of the particle structure is at least one of silicate glass, borate glass, silicon dioxide, sodium chloride, polycarbonate and cycloolefin polymer; The material of the first connecting substrate is organic silicon resin, and the material of the particle structure is at least one of silicate glass, borate glass, silicon dioxide, calcium fluoride, lithium fluoride, sodium chloride, polymethyl methacrylate, polycarbonate and cycloolefin polymer.

11. The light emitting assembly according to any one of claims 1 to 7, characterized in that: The mass percentage of the particle structure in the first connecting portion is in the range of 1.5% to 22%.

12. The light emitting assembly according to any one of claims 1 to 7, characterized in that: The light-emitting unit includes a plurality of sub-light-emitting units, and the plurality of sub-light-emitting units include a first sub-light-emitting unit, a second sub-light-emitting unit and a third sub-light-emitting unit; The color conversion unit includes a plurality of color conversion parts, and the plurality of color conversion parts include a first color conversion part corresponding to the first sub-light-emitting unit, a second color conversion part corresponding to the second sub-light-emitting unit, and a third color conversion part corresponding to the third sub-light-emitting unit; Among them, the color of the light emitted by the first sub-light-emitting unit after passing through the first color conversion part is a first color, the color of the light emitted by the second sub-light-emitting unit after passing through the second color conversion part is a second color, and the color of the light emitted by the third sub-light-emitting unit after passing through the third color conversion part is a third color, and the first color, the second color and the third color are different from each other.

13. The light emitting assembly according to claim 12, characterized in that: The sub-light emitting unit comprises: a first semiconductor layer, a light emitting layer and a second semiconductor layer sequentially stacked in a direction away from the substrate, wherein the first semiconductor layer comprises a first semiconductor portion, and the second semiconductor layer comprises a second semiconductor portion; the sub-light emitting unit further comprises: a connecting electrode connected to the first semiconductor portion; an insulating layer, the insulating layer comprising a first via hole and a second via hole, the first via hole exposing at least a portion of the connecting electrode, the second via hole corresponding to the sub-light emitting unit, and the second via hole exposing at least a portion of the second semiconductor layer of the corresponding sub-light emitting unit; a first electrode, the first electrode being connected to the connecting electrode through the first via hole; and a second electrode, wherein the second electrode is located at a side of the sub-light emitting unit away from the substrate and is electrically connected to the second semiconductor layer in the sub-light emitting unit.

14. The light emitting assembly according to claim 13, characterized in that: The first semiconductor layer of the plurality of sub-light-emitting units is a common film layer, and the first semiconductor layer includes: the first semiconductor portion, and a plurality of second semiconductor portions corresponding to the plurality of sub-light-emitting units; the light-emitting layer of the sub-light-emitting unit is connected to the corresponding second semiconductor portion.

15. The light emitting assembly according to claim 13, characterized in that: The first semiconductor layer includes a first sublayer and a second sublayer stacked in a direction away from the substrate; the material of the first sublayer is a gallium nitride buffer layer, and the material of the second sublayer is N-type gallium nitride; The material of the light emitting layer is multiple quantum wells, and the material of the second semiconductor layer is P-type gallium nitride.

16. The light emitting assembly according to claim 12, characterized in that: The color conversion unit comprises: A light-shielding layer, wherein the light-shielding layer has a plurality of light-through holes, wherein the plurality of light-through holes include: a first light-through hole, a second light-through hole, and a third light-through hole, wherein the first light-through hole is arranged correspondingly to the first sub-light-emitting unit, the second light-through hole is arranged correspondingly to the second sub-light-emitting unit, and the third light-through hole is arranged correspondingly to the third sub-light-emitting unit; A plurality of filter units, the plurality of filter units comprising: a first filter unit, a second filter unit and a third filter unit, the orthographic projection of the first filter unit on the substrate overlaps with the orthographic projection of the first light through hole on the substrate, and the first filter unit is arranged correspondingly to the first sub-light emitting unit, the orthographic projection of the second filter unit on the substrate overlaps with the orthographic projection of the second light through hole on the substrate, and the second light emitting unit is arranged correspondingly, the orthographic projection of the third filter unit on the substrate overlaps with the orthographic projection of the third light through hole on the substrate, and the third filter unit is arranged correspondingly to the third sub-light emitting unit; A defining dam layer, wherein the defining dam layer includes a plurality of opening areas, wherein the plurality of opening areas include: a first opening area, a second opening area, and a third opening area, wherein an orthographic projection of the first opening area on the substrate overlaps with an orthographic projection of the first light-through hole on the substrate, and is arranged corresponding to the first sub-light-emitting unit, an orthographic projection of the second opening area on the substrate overlaps with an orthographic projection of the second light-through hole on the substrate, and is arranged corresponding to the second sub-light-emitting unit, and an orthographic projection of the third opening area on the substrate overlaps with an orthographic projection of the third light-through hole on the substrate, and is arranged corresponding to the third sub-light-emitting unit; The first color conversion portion is disposed in the first opening area, the second color conversion portion is disposed in the second opening area, and the third color conversion portion is disposed in the third opening area.

17. The light emitting assembly according to any one of claims 1 to 7, and 13 to 16, characterized in that: The light-emitting component is a light-emitting chip.

18. A method for preparing a light-emitting component, characterized in that: The method comprises: Obtain a color conversion substrate, the color conversion substrate comprising a substrate and a color conversion unit located on one side of the substrate; Acquire an initial light-emitting substrate, wherein the initial light-emitting substrate comprises a first temporary substrate and a light-emitting unit located on one side of the first temporary substrate; Acquiring a light-emitting substrate, wherein the acquiring the light-emitting substrate comprises: forming a second temporary substrate on a side of the light-emitting unit away from the first temporary substrate, and peeling the first temporary substrate off the light-emitting unit; A connecting layer is used to connect the light-emitting unit in the light-emitting substrate and the color conversion unit in the color conversion substrate, wherein the connecting layer comprises: a first connecting portion, the first connecting portion comprises a first connecting substrate and a plurality of particle structures located in the first connecting substrate; The second temporary substrate is peeled off.

19. The preparation method according to claim 18, characterized in that: The surface of the first temporary substrate close to the light emitting unit includes a plurality of protrusions, and the side of the light emitting unit close to the first temporary substrate includes a plurality of pits, and the plurality of pits in the light emitting unit are formed based on the plurality of protrusions.

20. A display substrate, characterized in that: The display substrate comprises a driving backplane and a plurality of light-emitting components as described in any one of claims 1 to 17; the driving backplane is used for carrying the light-emitting components and providing driving signals to the light-emitting components.

Images