Method for manufacturing semiconductor device

Abstract

This method for manufacturing a semiconductor device is provided with: a step in which the surfaces of a plurality of devices (20) bonded to the surface of an organic substrate (10) are coated with an adhesive (60) having heat dissipation properties and thermosetting properties, then a heat dissipation block (50) is mounted, and heat treatment and bonding are performed; a step in which an adhesive (100) having heat dissipation and thermosetting properties is applied to the surface of the heat dissipation block (50) so as to be higher than the height (A) of a molding resin (70) that seals the device (20) in the subsequent step; and a step in which the adhesive (100) is cured by heat treatment while the height from the surface of the organic substrate (10) to the surface of the adhesive (100) is made uniform with the thickness of the adhesive (100) so that the height from the surface of the organic substrate (10) to the surface of the adhesive (100) becomes the height (A) of the molding resin (70).

Description

Technical Field

[0001] This application relates to a method for manufacturing a semiconductor device. Background Art

[0002] As an example of a conventional semiconductor device, in a high-frequency product-corresponding hybrid module, when sealed with a molding resin, the height of a heat sink is adjusted so that the heat sink is exposed on the module surface. One side of the heat sink is brought into contact with a device that generates heat during operation via a highly heat-dissipating adhesive, and the other side is exposed on the module surface, so that heat generated from the device can be easily dissipated to the outside of the module.

[0003] For example, Patent Document 1 discloses a method for manufacturing a semiconductor device in which one side of a heat sink is brought into contact with the back surface of a chip stage on which a semiconductor element is mounted, and the outer peripheral side surface is surrounded with resin so that the other side is exposed on the module surface.

[0004] Patent Document 1: Japanese Patent Laid-Open No. 04-299848 (paragraph 0011, Figure 1 )

[0005] However, in the conventional method for manufacturing a semiconductor device, due to the dimensional tolerance of the thickness of the heat sink and the state of bonding to the organic substrate, it is difficult to align the heights of the surfaces of multiple heat sinks with high precision. When the height of the heat sink surface is higher than expected, there is a problem that when the molding die is closed for sealing the molding resin, the molding die contacts the heat sink, and the device is damaged due to the closing pressure of the molding die. In addition, when the height of the heat sink surface is lower than expected, there is a problem that the molding resin covers the heat sink, resulting in deterioration of the heat dissipation performance of the device. Summary of the Invention

[0006] This application is made to solve the above problems, and an object thereof is to provide a method for manufacturing a semiconductor device that aligns the heights of the surfaces of heat sinks with high precision, does not damage the device, and exposes the heat sink on the module surface.

[0007] The method for manufacturing a semiconductor device disclosed in this application is characterized by including the following steps: a step of coating a first adhesive having heat dissipation and thermosetting properties on the surfaces of a plurality of devices bonded to the surface of a substrate, then mounting a heat sink, and performing heat treatment and bonding; a step of coating a second adhesive having heat dissipation and thermosetting properties on the surface of the heat sink so as to be higher than the height of the resin for sealing the device in a subsequent step; and a step of curing the second adhesive while making the height uniform with the thickness of the second adhesive so that the height to the surface of the second adhesive becomes the height of the resin and performing heat treatment.

[0008] In addition, a method for manufacturing a semiconductor device disclosed in the present application is characterized by including the following steps: a step of coating an adhesive having heat dissipation properties and thermosetting properties on the surfaces of a plurality of devices joined to the surface of a substrate in such a manner that the height is higher than that of the resin for sealing the devices in a subsequent process when a heat sink is mounted, and then mounting the heat sink; and a step of curing the adhesive by performing heat treatment while making the height uniform with the thickness of the adhesive so that the height of the surface of the heat sink becomes the height of the resin.

[0009] According to the present application, by accurately aligning the height of the surface of the heat sink, it is possible to expose the heat sink on the module surface without damaging the devices, and it is possible to easily obtain a high-performance semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a flowchart showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 1.

[0011] Figure 2 It is a cross-sectional view showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 1.

[0012] Figure 3 It is a flowchart showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 2.

[0013] Figure 4 It is a cross-sectional view showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 2.

[0014] Figure 5 It is a flowchart showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 3.

[0015] Figure 6 It is a cross-sectional view showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 3.

[0016] Figure 7 It is a flowchart showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 4.

[0017] Figure 8 It is a cross-sectional view showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 4. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0018] Embodiment 1.

[0019] Figure 1 It is a flowchart showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 1 of the present application. Figure 2It is a cross-sectional view showing the manufacturing process in the manufacturing method of the semiconductor device according to Embodiment 1 of the present application. Figure 2 (a) of Figure 2 is a cross-sectional view of the semiconductor device after mounting a device heat sink on an organic substrate and performing heat treatment. Figure 2 (b) of Figure 2 is a cross-sectional view of the semiconductor device after applying an adhesive on the heat sink. Figure 2 (c) of Figure 2 is a cross-sectional view of the semiconductor device after heat-treating the adhesive applied on the heat sink. Figure 2 (d) of Figure 2 is a cross-sectional view of the semiconductor device after sealing with a molding resin.

[0020] First, as shown in Figure 2 (a) of Figure 2 , after applying an adhesive 60 having high heat dissipation and thermosetting properties as a first adhesive on a plurality of devices 20 joined to an organic substrate 10 by solder 40, a heat sink is mounted and heat treatment is performed to cure the adhesive 60 for bonding (step S101). The height after bonding the heat sink 50 is set in advance to be lower than the height A of the package. At this time, due to the dimensional tolerances of the thicknesses of the organic substrate 10, solder 40, device 20, adhesive 60, and heat sink 50 and the bonding state on the organic substrate, a deviation occurs in the height of the upper part of the heat sink 50.

[0021] Next, as shown in Figure 2 (b) of Figure 2 , an adhesive 100 having high heat dissipation and thermosetting properties as a second adhesive is applied on the heat sink 50 in a manner higher than the height A of the package (step S102).

[0022] Next, as shown in Figure 2 (c) of Figure 2 , it is clamped with a jig so that the height of the adhesive 100 applied above the heat sink 50 on all the devices 20 becomes the height A of the package, and heat treatment is performed while making the height uniform with the thickness of the adhesive 100 to cure the adhesive 100 (step S103).

[0023] Finally, as shown in Figure 2 (d) of Figure 2 , the device 20 is resin-sealed (step S104) so that the molding resin 70 becomes the height A of the package, and the surface of the adhesive 100 is exposed on the upper surface of the package (molding resin 70). At this time, the surface of the adhesive 100 contacts the molding die via a protective tape or the like, so that the molding resin 70 does not flow onto the adhesive 100.

[0024] Here, since the device 20 is electrically connected from the lower surface of the device 20 by flip-chip bonding, conduction is not required on the upper surface of the device 20, and the adhesive 60 and the adhesive 100 can be conductive adhesives or insulating adhesives.

[0025] As described above, the method for manufacturing a semiconductor device according to the first embodiment includes the following steps: After applying an adhesive 60 having heat dissipation and thermosetting properties to the surfaces of a plurality of devices 20 bonded to the surface of the organic substrate 10, a heat sink 50 is mounted, and heat treatment and bonding are performed; a step of applying an adhesive 100 having heat dissipation and thermosetting properties to the surface of the heat sink 50 in a manner higher than the height A of the molding resin 70 that will seal the device 20 in the subsequent process; and a step of curing the adhesive 100 while making the height from the surface of the organic substrate 10 to the surface of the adhesive 100 equal to the height A of the molding resin 70 by adjusting the thickness of the adhesive 100 and performing heat treatment. Therefore, by leveling with the thickness of the adhesive 100, the height from the organic substrate 10 to the adhesive 100 is made the same as the package height A, so that the dimensional tolerances of the thicknesses of the organic substrate, solder, device, first adhesive, and heat sink, and the deviations caused by the bonding state on the organic substrate can be absorbed, and the height of the heat dissipation part can be aligned with high precision. As a result, the heat dissipation part can be exposed on the module surface without damaging the device, and a high-performance semiconductor device can be easily obtained.

[0026] Thus, the height of the second adhesive is higher than the height A of the package, and when the molding resin is sealed, the second adhesive contacts the molding die, and the device will not be damaged by the clamping pressure of the molding die.

[0027] In addition, the height of the second adhesive is lower than the height A of the package, and the molding resin will not flow into the upper part of the heat sink. Furthermore, compared with the conventional method, the cutting process can be reduced, and the problems of poor quality such as burrs generated on the heat sink and molding resin defects can be eliminated.

[0028] Embodiment 2.

[0029] Although in Embodiment 1, the step of heat-treating and curing the adhesive 100 is performed separately, in Embodiment 2, the case of performing it simultaneously in the step of resin-sealing the device 20 is described.

[0030] Figure 3 It is a flowchart showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 2 of the present application. Figure 3 It is a cross-sectional view showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 2 of the present application. Figure 3 (a) is a cross-sectional view of the semiconductor device after mounting the heat sink on the device on the organic substrate and performing heat treatment, Figure 3 (b) is a cross-sectional view of the semiconductor device after applying the adhesive on the heat sink, Figure 3 (c) is a cross-sectional view of the semiconductor device after curing the adhesive while sealing with the molding resin.

[0031] In this second embodiment, Figure 3 Step S301( Figure 4 (a)) to step S302 ( Figure 4 The method for manufacturing a semiconductor device in the step (b)) is similar to that in the first embodiment. Figure 1 Step S101( Figure 2 (a)) to step S102 ( Figure 2 The method for manufacturing a semiconductor device in the step (b)) is similar, and corresponding parts are denoted by the same reference numerals and their description is omitted.

[0032] After step S302, the process of heat treating the adhesive 100 in the second embodiment is not separately performed, and the adhesive 100 is clamped by the molding die while being kept uncured, such as Figure 4 As shown in (c), the height of the adhesive 100 applied to the heat sink 50 on all the devices 20 is made uniform by the thickness of the adhesive 100 so that the height becomes the height A of the package, and the adhesive 100 is cured by heat treatment, and the device 20 is resin-sealed with the molding resin 70 (step S303), so that the adhesive 100 is exposed on the upper surface of the package (molding resin 70). At this time, a protective tape or the like is sandwiched between the molding die and the adhesive 100 so that the molding die and the adhesive 100 are not bonded.

[0033] Here, the device 20 is electrically connected from the bottom surface of the device 20 by flip chip bonding, and the top surface of the device 20 does not need to be conductive. The adhesive 60 and the adhesive 100 can be conductive adhesives or insulating adhesives.

[0034] As described above, the method for manufacturing a semiconductor device according to the second embodiment includes the following steps: after applying the adhesive 60 having heat dissipation and thermosetting properties on the surface of the plurality of devices 20 bonded to the surface of the organic substrate 10, mounting the heat sink 50, performing heat treatment, and bonding; applying the adhesive 100 having heat dissipation and thermosetting properties on the surface of the heat sink 50 so as to be higher than the height A of the molding resin 70 that seals the devices 20 in the subsequent step; and performing heat treatment to cure the adhesive 100 while making the height uniform by the thickness of the adhesive 100 so that the height from the surface of the organic substrate 10 to the surface of the adhesive 100 becomes the height A of the molding resin 70. In the step of curing the adhesive 100, the adhesive 100 is cured while being sandwiched by a molding die so as to make the height uniform and performing heat treatment to cure the adhesive 100, and the devices 20 are sealed with the molding resin 70. Therefore, not only the effect of the first embodiment can be obtained, but also there is no need to perform a separate step of heat treating the second adhesive, thereby reducing the number of steps.

[0035] Embodiment 3

[0036] In Embodiment 1 and Embodiment 2, the height of the package is made uniform by the thickness of the adhesive 100. However, in Embodiment 3, the case where the height of the package is made uniform by the thickness of the adhesive 60 will be described.

[0037] Figure 5 FIG. is a flowchart showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 3 of the present application. Figure 6 FIG. is a cross-sectional view showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 3 of the present application. Figure 6 (a) of FIG. is a cross-sectional view of the semiconductor device after mounting the heat sink on the devices on the organic substrate, Figure 6 FIG. (b) is a cross-sectional view of the semiconductor device after heat-treating the adhesive on which the heat sink is mounted, Figure 6 FIG. (c) is a cross-sectional view of the semiconductor device after sealing with a molding resin.

[0038] First, as Figure 6 shown in (a) of FIG., after applying a thick, highly heat-dissipating and thermosetting adhesive 60 on the plurality of devices 20 joined to the organic substrate 10 by solder 40, a heat sink is mounted (step S501). The height after mounting the heat sink 50 is higher than the height A of the package by the amount of the thick application of the adhesive 60. At this time, due to the dimensional tolerances of the thicknesses of the organic substrate 10, solder 40, devices 20, adhesive 60, and heat sink 50 and the bonding state on the organic substrate, a deviation occurs in the height of the upper part of the heat sink 50.

[0039] Next, as Figure 6 shown in (b) of FIG., while clamping with a jig so that the height up to the heat sink 50 on all the devices 20 becomes the height A of the package, the height is made uniform with the thickness of the adhesive 60 and heat treatment is performed to cure the adhesive 100 (step S502).

[0040] Finally, as Figure 6 shown in (c) of FIG., the devices 20 are resin-sealed with a molding resin 70 so as to become the height A of the package (step S503), and the surface of the heat sink 50 is exposed on the upper surface of the package (molding resin 70). At this time, the surface of the heat sink 50 is in contact with the molding die via a protective tape or the like to prevent the molding resin 70 from flowing onto the heat sink 50.

[0041] Here, since the devices 20 are electrically connected from the lower surface of the devices 20 by flip-chip bonding, conduction is not required on the upper surface of the devices 20, and the adhesive 60 can be a conductive adhesive or an insulating adhesive.

[0042] As described above, the method for manufacturing a semiconductor device according to Embodiment 3 includes the following steps: After coating an adhesive 60 having heat dissipation and thermosetting properties on the surfaces of a plurality of devices 20 joined to the surface of the organic substrate 10 in such a manner that the height is higher than that of the molding resin 70 for sealing the devices 20 in subsequent steps when the heat sink 50 is mounted, a step of mounting the heat sink 50; and a step of curing the adhesive 60 by performing heat treatment while making the height from the surface of the organic substrate 10 to the surface of the heat sink 50 equal to the height A of the molding resin 70 by adjusting the height with the thickness of the adhesive 60. Therefore, the height from the organic substrate 10 to the heat sink 50 is leveled with the thickness of the adhesive 60 so as to be the same as the height A of the molding resin 70, thereby being able to absorb the dimensional tolerances of the thicknesses of the organic substrate, solder, devices, adhesive, and heat sink and the deviations caused by the bonding state on the organic substrate, aligning the height of the heat sink surface with high precision, and thus being able to expose the heat sink on the module surface without damaging the devices, and easily obtaining a high-performance semiconductor device.

[0043] Accordingly, the height of the heat sink is higher than the height A of the package, and when the molding resin is sealed, the heat sink contacts the molding die, and the devices are not damaged by the clamping pressure of the molding die.

[0044] In addition, the height of the adhesive is lower than the height A of the package, and the molding resin does not flow into the upper part of the heat sink. Furthermore, compared with the conventional method, the cutting process can be reduced, and the problems of poor quality such as burrs generated on the heat sink and molding resin defects can be eliminated.

[0045] Embodiment 4.

[0046] Although in Embodiment 3, the step of heat-treating and curing the adhesive 60 is performed separately, in Embodiment 4, the case of performing it simultaneously in the step of resin-sealing the devices 20 will be described.

[0047] Figure 7 It is a flowchart showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 4 of the present application. Figure 8 It is a cross-sectional view showing the manufacturing process in the method for manufacturing a semiconductor device according to Embodiment 4 of the present application. Figure 8 (a) is a cross-sectional view of the semiconductor device after mounting the heat sink on the devices on the organic substrate, Figure 8 and (b) is a cross-sectional view of the semiconductor device after curing the adhesive while sealing with the molding resin.

[0048] In the present Embodiment 4, Figure 7 in the process of step S701 ( Figure 8 (a) of this), the method for manufacturing the semiconductor device in the process is the same as that in Embodiment 3Figure 5 Step S501 of Figure 6 Similar to the method for manufacturing a semiconductor device in the process of (a) of Figure 5 , the corresponding parts are labeled with the same reference numerals and their descriptions are omitted.

[0049] After step S701, the process of heat-treating the adhesive 60 in Embodiment 4 is not performed separately. The adhesive 60 is clamped by a molding die while remaining uncured. As Figure 8 shown in (b) of Figure 8 , while making the height up to all the heat sinks 50 on the device 20 equal to the height A of the package by the thickness of the adhesive 60, heat treatment is performed to cure the adhesive 60, and the device 20 is resin-sealed with a molding resin 70 (step S802). The surface of the heat sink 50 is exposed on the upper surface of the package (molding resin 70). At this time, the surface of the heat sink 50 is in contact with the molding die via a protective tape or the like so that the molding resin 70 does not flow onto the heat sink 50.

[0050] Here, the device 20 is electrically connected from the lower surface of the device 20 by flip-chip bonding, and conduction is not required on the upper surface of the device 20. The adhesive 60 can be a conductive adhesive or an insulating adhesive.

[0051] As described above, according to the method for manufacturing a semiconductor device of the present Embodiment 4, the following processes are included: on the surfaces of a plurality of devices 20 joined to the surface of the organic substrate 10, in a manner higher than the height of the molding resin 70 that seals the device 20 in subsequent processes when the heat sink 50 is mounted, after applying an adhesive 60 having heat dissipation and thermosetting properties, the process of mounting the heat sink 50; and the process of curing the adhesive 60 while making the height from the surface of the organic substrate 10 to the surface of the heat sink 50 equal to the height A of the molding resin 70 by the thickness of the adhesive 60 and performing heat treatment. In the process of curing the adhesive 60, it is clamped by a molding die, and while making the above height equal, heat treatment is performed to cure the adhesive 60, and the device 20 is sealed with a molding resin 70. Therefore, not only the effects in Embodiment 3 can be obtained, but also the process of separately heat-treating the adhesive is not required, and the number of processes can be reduced.

[0052] This application describes various exemplary embodiments and examples, but the various features, modes, and functions described in one or more embodiments are not limited to the application of a specific embodiment, and can also be applied alone or in various combinations to the embodiments. Therefore, countless variations that are not illustrated can be conceived within the technical scope disclosed in this application specification. For example, it includes the case of deforming at least one component, adding, or omitting, and also includes the case of extracting at least one component and combining it with the components of other embodiments.

[0053] Description of Reference Numerals

[0054] 10... Organic substrate; 20... Device; 40... Solder; 50... Heat sink; 60... Adhesive; 70... Molding resin; 100... Adhesive.

Claims

1. A method for manufacturing a semiconductor device, It is characterized in that Including the following processes: After coating the surfaces of the plurality of devices bonded to the surface of the substrate with a first adhesive having heat dissipation and thermosetting properties, a heat dissipation block is mounted and heat-treated and bonded; A step of applying a second adhesive having heat dissipation and thermosetting properties on the surface of the heat dissipation block in a manner higher than the height of a resin used to seal the device in a subsequent step; as well as The step of curing the second adhesive by heat treatment while making the height uniform with the thickness of the second adhesive so that the height to the surface of the second adhesive becomes the height of the resin.

2. The method for manufacturing a semiconductor device according to claim 1, It is characterized in that In the step of curing the second adhesive, the second adhesive is cured by sandwiching the device with a mold and performing a heat treatment while the height is aligned, and the device is sealed with the resin.

3. A method for manufacturing a semiconductor device, It is characterized in that Including the following processes: A step of applying a heat dissipation and thermosetting adhesive to the surfaces of the plurality of devices bonded to the surface of the substrate so that, when a heat dissipation block is mounted, the adhesive is higher than the height of a resin that seals the devices in a subsequent step, and then mounting the heat dissipation block; and A step of curing the adhesive by heat treatment while making the height uniform with the thickness of the adhesive so that the height to the surface of the heat sink block becomes the height of the resin.

4. The method for manufacturing a semiconductor device according to claim 3, It is characterized in that In the step of curing the adhesive, the device is sandwiched by a mold, and heat-treated while the height is aligned to cure the adhesive, and the device is sealed with the resin.

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