High-temperature and high-humidity reverse bias aging test method compatible with continuous periodic pressurization

Abstract

The invention relates to an aging test technology, and discloses a high-temperature and high-humidity reverse bias aging test method compatible with continuous periodic pressurization, and the method comprises the steps: carrying out the real-time monitoring of each to-be-tested device DUT after setting an initial pressurization mode, and enabling the monitoring period to be S1, thereby obtaining the real-time leakage current of each to-be-tested device DUT, the real-time leakage currents of the n DUTs are It1, It2... Itn respectively; determining the junction temperatures Tj1, Tj2... Tjn of each DUT to be tested according to the monitoring of the real-time leakage current; and according to the junction temperatures Tj1, Tj2... Tjn of each DUT to be tested, further determining the pressurization mode of each DUT to be tested. The high-temperature and high-humidity reverse bias aging test method compatible with continuous and periodic pressurization can perfectly meet the test requirements, reduce the total test time and cost, and ensure that the test result is accurate and reliable.

Description

Technical Field

[0001] The invention relates to an aging test technology, and in particular to a high-temperature and high-humidity reverse bias aging test method compatible with continuous periodic pressurization. Background Art

[0002] The high temperature and high humidity reverse bias test (HIGH HUMIDITY HIGH TEMPERATURE REVERSE BIAS, H3TRB) is used to evaluate the durability and stability of products in extreme environments to ensure that the products can work properly under various environmental conditions. During the test, the product will be exposed to high temperature and high humidity. For power devices, the implementation of the H3TRB test needs to be based on the JESD22-A101 (STEADY-STATE TEMPERATURE-HUMIDITY BIAS LIFE TEST) standard.

[0003] According to JESD22-A101, there are two recommended pressurization methods, continuous pressurization (CONTINUOUSBIAS) and cyclic pressurization (CYCLED BIAS). When the leakage of the chip under test is small, the self-heating phenomenon of the chip under test is not significant, and the humidity experienced by the chip under test is basically the same as the humidity of the cavity environment. At this time, continuous pressurization can be used. When the leakage of the chip under test is large, the self-heating phenomenon of the chip under test is significant, and the junction temperature of the chip rises significantly, driving the moisture away from the internal chip. The humidity inside the chip is lower than the humidity in the cavity, which prevents moisture-related failures from occurring. At this time, periodic pressurization is required so that moisture can re-accumulate on the chip during the non-pressurized period.

[0004] For example, prior art 1: CN202211708511X discloses a dynamic H3TRB test circuit and test method for silicon carbide power devices and diodes, the circuit comprising a plurality of half-bridge topology circuits connected in parallel, two accompanying test circuits and a DC power supply; each half-bridge topology circuit comprises two samples to be tested and a sampling resistor connected in series in sequence; the accompanying test circuit comprises a current limiting resistor, an accompanying test sample and a sampling resistor; the upper bridge device shares one drive signal, the lower bridge device shares one drive signal, and the two drive signals have the same frequency, opposite polarity, and are provided with a dead time.

[0005] Prior Art 2: CN202211688645X discloses a protective layer for a power semiconductor device. The metal interconnection structure of the power semiconductor device includes a patterned top metal layer. A patterned passivation layer is formed on the surface of the metal interconnection structure, and the passivation layer exposes the surfaces of some of the top metal layer. The protective layer is formed on the surface of the passivation layer. The material of the protective layer is polyimide. After patterning, the protective layer is subjected to a post-bake treatment. The post-bake treatment removes moisture from the protective layer and cures the protective layer. After the post-bake treatment, the remaining thickness of the protective layer is greater than or equal to 5 microns to improve the reliability of the power semiconductor device.

[0006] Prior Art 3: CN202321101149X discloses a dismountable H3TRB experimental tooling, which includes a base, a pillar, and a probe assembly. The base includes a base body and positioning holes. The probe assembly includes a PCB board, four locking nuts, a contact probe, an auxiliary probe, and a banana plug female socket. The banana plug female socket is disposed through the PCB board, and the insertion end of the banana plug female socket faces away from the base.

[0007] In the prior art, when some chips need to perform H3TRB simultaneously, and the leakage currents of the chips are inconsistent and the heat generations of the chips are inconsistent, that is, during the experiment, for some chips, ΔT ja ≥10 °C, and for some chips, ΔT ja <10 °C, the prior art cannot perform the tests simultaneously, but needs to classify the chips according to their leakage currents and then perform the tests separately, which requires more test resources.

[0008] Or when the leakage current of the chip changes during the entire experiment and the heat generation of the chip also changes accordingly, ΔTJA changes from less than 10 °C to greater than 10 °C. The prior art cannot meet the requirements throughout the entire experiment. Summary of the Invention

[0009] In view of the problem that the prior art can only select a single pressurization method, single continuous pressurization, or single periodic pressurization and cannot be compatible with continuous pressurization and periodic pressurization, the present invention provides a high-temperature and high-humidity reverse bias aging test method compatible with continuous and periodic pressurization.

[0010] To solve the above technical problems, the present invention is solved by the following technical solutions:

[0011] A high-temperature and high-humidity reverse bias aging test method compatible with continuous and periodic pressurization includes a plurality of groups of test units. Under a high-pressure and high-humidity environment, each group of test units is used to test a device under test (DUT). The method includes:

[0012] Control the device under test (DUT) to be in a sealed cavity container, and keep the temperature and relative humidity in the container constant at 85°C and 85% respectively. While maintaining the airtightness of the container, lead out the gate connection terminal and drain-source connection terminal for the DUT.

[0013] After the temperature and humidity in the container are stable, set the pressurization method according to the initial leakage current of the test unit; obtain the initial leakage current of each device under test (DUT). For n devices under test (DUT), the initial leakage currents are I S1 ,I S2 …I Sn ; Set the initial pressurization method for the device under test (DUT) based on the initial leakage current of each device under test (DUT) obtained.

[0014] After setting the initial pressurization method, monitor each device under test (DUT) in real time. The monitoring period is S 1 ,so as to obtain the real-time leakage current of each device under test (DUT). For n devices under test (DUT), the real-time leakage currents are I t1 ,I t2 …I tn ;

[0015] Based on the monitoring of the real-time leakage current, determine the junction temperature T j1 ,T j2 …T jn ;

[0016] Based on the junction temperature T j1 ,T j2 …T jn of each device under test (DUT), further determine the pressurization method of each device under test (DUT).

[0017] Preferably, based on the initial leakage current I S1 ,I S2 …I Sn obtained for each device under test (DUT), set the initial pressurization method for the device under test (DUT). For the device under test (DUT) corresponding to the smaller current among the initial leakage currents of each device under test (DUT), the pressurization method is a continuous pressurization method. For the device under test (DUT) corresponding to the larger current among the initial leakage currents of each device under test (DUT), the pressurization method is a periodic pressurization method.

[0018] Preferably, based on the monitoring of the real-time leakage current, determine the junction temperature T j1 ,T j2 …T jn ; Within the monitoring period S 2 , the real-time leakage current I S1 ,I S2 …I SnWhen they are all greater than the set leakage current threshold, the junction temperature T of each device under test (DUT) is output j1 , T j2 …T jn。

[0019] Preferably, further determining the voltage application method for each device under test (DUT) includes:

[0020] According to the junction temperature T of each device under test (DUT) j1 , T j2 …T jn and the ambient temperature T of each device under test (DUT) obtained a1 , T a2 …T an ;

[0021] Calculate the temperature difference ΔT of each device under test (DUT) ja1， ΔT ja2 …ΔT jan ;

[0022] ΔT ja1 = T j1- T a1；

[0023] ΔT ja2 = T j2- T a2；

[0024] ……

[0025] ΔT jan = T jn- T an；

[0026] wherein, T j1 , T j2 …T jn is the junction temperature of each device under test (DUT); T a1 , T a2 …T an is the ambient temperature of each device under test (DUT).

[0027] Judge the temperature difference of each device under test (DUT). When the temperature difference to be measured of the device under test (DUT) is less than 10 °C, the voltage application method for the device under test (DUT) is the continuous voltage application method; otherwise, the voltage application method for the device under test (DUT) is the periodic voltage application method.

[0028] Preferably, the junction temperature T of each device under test (DUT) j1 , T j2 …T jn : Through the thermal resistance Rth from the junction of the device under test (DUT) to the environment jaCalculation of the current I of the device under test (DUT) and the voltage U borne by the DUT;

[0029] T jn＝ T a(n) +U * I * Rth ja(n)；

[0030] Wherein, Rth ja(n) is the thermal resistance from the junction of the DUT to the environment, I is the current of the DUT, U is the voltage borne by the DUT, and T a(n) is the real-time ambient temperature.

[0031] Preferably, for each DUT, the junction temperature T j1 T j2 …T jn is detected by a thermocouple to measure the case temperature T c of the DUT, the thermal resistance Rth jc from the junction of the DUT to the package housing, the current I of the DUT, and the voltage U borne by the DUT for calculation;

[0032] T jn＝ T c(n) +U * I * Rth jc(n)；

[0033] Wherein, Rth jc(n) is the thermal resistance from the junction of the DUT to the package housing, I is the current of the DUT, U is the voltage borne by the DUT, and T c(n) is the real-time case temperature of the DUT.

[0034] Preferably, the test unit includes a current acquisition module, an isolation amplification module, an analog-to-digital conversion module, a microcontroller, and a relay control module. The current acquisition module is used to acquire the current between the drain and source electrodes and transmit the acquired drain current to the isolation amplification module. The isolation amplification module is used to amplify the current and transmit the processed current to the microcontroller. The microcontroller sends a control signal to the relay control module, and the relay control module is connected to the drain of the DUT to control the voltage applied to the drain.

[0035] Preferably, the relay control module uses a relay RLY1. The 4th terminal of the relay RLY1 is connected to the drain terminal of the DUT. The 3rd terminal of the relay RLY1 is connected to the input power supply, and a diode protection unit D1 is connected in parallel on one side of the relay.

[0036] Due to the adoption of the above technical solutions, the present invention has remarkable technical effects:

[0037] The present invention is compatible with a high-temperature and high-humidity reverse bias aging test method with continuous and periodic pressure application, which can perfectly meet the above test requirements, reduce the total test time and cost, and ensure the accuracy and reliability of test results. Description of the Drawings

[0038] Figure 1 is a flowchart of the present invention.

[0039] Figure 2 is a schematic diagram of the judgment logic of the present invention.

[0040] Figure 3 is a schematic circuit diagram of continuous pressure application and periodic pressure application of the present invention. Detailed Embodiment

[0041] The present invention will be further described in detail below with reference to the drawings and embodiments.

[0042] Embodiment 1

[0043] A high-temperature and high-humidity reverse bias aging test method compatible with continuous and periodic pressure application includes an array of test units. Each test unit tests a device under test (DUT) in a high-pressure and high-humidity environment. The method includes:

[0044] Controlling the DUT to be in a sealed cavity container, and keeping the temperature and relative humidity in the container constant at 85°C and 85% respectively. While maintaining the airtightness of the container, lead out the gate connection terminal and drain-source connection terminal for the DUT.

[0045] After the temperature and humidity in the container are stable, set the pressure application mode according to the initial leakage current of the test unit; obtain the initial leakage current of each DUT. For n DUTs, the initial leakage currents are I S1 , I S2 …I Sn ; Set the initial pressure application mode for each DUT based on the obtained initial leakage current of each DUT.

[0046] After setting the initial pressure application mode, monitor each DUT in real time. The monitoring period is S 1 , so as to obtain the real-time leakage current of each DUT. For n DUTs, the real-time leakage currents are I t1 , I t2 …I tn ;

[0047] Based on the monitoring of the real-time leakage current, determine the junction temperature T j1 , T j2 …T jn ;

[0048] According to the junction temperature T of each device under test (DUT) j1 , T j2 …T jn , further determine the voltage application method for each DUT.

[0049] According to the initial leakage current I of each DUT obtained S1 , I S2 …I Sn Set the initial voltage application method for the DUT. For the DUT corresponding to the smaller current in the initial leakage current of each DUT, the voltage application method is continuous voltage application. For the DUT corresponding to the larger current in the initial leakage current of each DUT, the voltage application method is periodic voltage application.

[0050] According to the monitoring of the real-time leakage current, determine the junction temperature T of each DUT j1 , T j2 …T jn ; within the monitoring period S 2 , the real-time leakage current I S1 , I S2 …I Sn are all greater than the set leakage current threshold, then output the junction temperature T of each DUT j1 , T j2 …T jn。

[0051] Further determining the voltage application method for each DUT includes:[[]]

[0052] According to the junction temperature T of each DUT j1 , T j2 …T jn and the ambient temperature T of each DUT obtained a1 , T a2 …T an ;

[0053] Calculate the temperature difference ΔT of each DUT ja1， ΔT ja2 …ΔT jan ;

[0054] ΔT ja1 = T j1- T a1；

[0055] ΔT ja2 = T j2- T a2；

[0056] ……

[0057] ΔT jan = T jn- T an；

[0058] wherein, T j1 , T j2 …T jn is the junction temperature of each device under test (DUT); T a1 , T a2 …T an is the ambient temperature of each device under test (DUT).

[0059] Judge the temperature difference of each device under test (DUT). When the temperature difference to be measured of the device under test (DUT) is less than 10 °C, the pressure application method for the device under test (DUT) is the continuous pressure application method; otherwise, the pressure application method for the device under test (DUT) is the periodic pressure application method.

[0060] The selection of the pressure application method is based on the difference between the junction temperature and the ambient temperature of the sample under test. The ambient temperature is an initially set fixed value, so the key lies in the junction temperature of the sample under test.

[0061] The junction temperature is calculated by combining the thermal resistance from the junction of the sample under test to the environment with real-time monitoring of the leakage current. In addition, the case temperature of the sample under test can also be detected using a thermocouple, and then the junction temperature can be calculated by combining the thermal resistance from the junction of the sample under test to the package case with real-time monitoring of the leakage current.

[0062] wherein, ΔT ja is the difference between the junction temperature and the ambient temperature of the chip under test. The ambient temperature is initially set and can also be obtained by detecting the ambient temperature using a thermocouple, while the junction temperature of the chip under test needs to be calculated by combining the thermal resistance, current data.

[0063] The junction temperature T j1 , T j2 …T jn of each device under test (DUT): is calculated through the thermal resistance Rth ja from the junction of the device under test (DUT) to the environment, the current I of the device under test (DUT), and the voltage U borne by the device under test (DUT);

[0064] T jn＝ T a(n) + U * I * Rth ja(n)；

[0065] wherein, Rth ja(n) is the thermal resistance from the junction of the device under test (DUT) to the environment, I is the current of the device under test (DUT); U is the voltage borne by the device under test (DUT), and T a(n) is the real-time ambient temperature.

[0066] The test unit includes a current acquisition module, an isolation amplifier module, an analog-to-digital conversion module, a microcontroller, and a relay control module; the current acquisition module is used to acquire the current of the drain-source electrode and transmit the acquired drain current to the isolation amplifier module, the isolation amplifier module is used to amplify the current and transmit the processed current to the microcontroller, the microcontroller sends a control signal to the relay control module, and the relay control module is connected to the drain of the device under test (DUT) to control the voltage applied to the drain.

[0067] The relay control module uses a relay RLY1. The 4th terminal of the relay RLY1 is connected to the drain terminal of the device under test (DUT); the 3rd terminal of the relay RLY1 is connected to the input power supply, and a diode protection unit D1 is connected in parallel on one side of the relay. Figure 3 Among them, Q1 is the chip under test, U1 is a current sensor, U2 is an isolation amplifier, U3 is an analog-to-digital converter (ADC), U4 is a microcontroller (MCU), U5 is a voltage regulator chip, RLY1 is a relay, C1 and C2 are capacitors, and D1 is a diode. U1 reads the real-time current of Q1, amplifies the signal through U2, then converts the analog signal into a digital signal through U3 and inputs it to U4. Data processing is performed in U4 to convert the real-time current into a judgment basis ΔTja. When ΔTja < 10°C, the microcontroller continuously outputs a high level, the relay is normally open, and the device is continuously pressurized. When ΔTja ≥ 10°C, it can be achieved through the timer module of the microcontroller.

[0068] Embodiment 2

[0069] Based on Embodiment 1, the difference from Embodiment 1 is that the junction temperature T of each device under test (DUT) j1 , T j2 …T jn : is detected by a thermocouple for the case temperature T of the device under test (DUT) c , the thermal resistance Rth from the junction of the device under test (DUT) to the package case jc , the current I of the device under test (DUT), and the voltage U borne by the device under test (DUT) are calculated;

[0070] T jn＝ T c(n) +U*I*Rth jc(n)；

[0071] Among them, Rth jc(n) is the thermal resistance from the junction of the device under test (DUT) to the package case, I is the current of the device under test (DUT); U is the voltage borne by the device under test (DUT), and T c(n) is the real-time case temperature of the device under test (DUT), that is, the temperature detected by the thermocouple.

[0072] Embodiment 3

[0073] Based on the above embodiments, in this embodiment, taking the example of 80 chips undergoing H3TRB aging simultaneously, a test method compatible with continuous voltage application and periodic voltage application will be described.

[0074] Before the experiment starts, initial conditions need to be set, mainly including the temperature and humidity in the chamber, the test voltage value, the thermal resistance data from the junction of the sample under test to the environment, the upper limit of monitored leakage current, and the initial voltage application method. According to the initial leakage current data of most devices, the default voltage application method, continuous voltage application or periodic voltage application, is selected. Then, according to the actual situation, the initial voltage application method for individual workstations can be changed.

[0075] Figure 1 The flowchart of the test method compatible with continuous voltage application and periodic voltage application shows various possible situations in the experiments. During the entire experiment, for workstation 1 (chip 1), the monitored leakage current is very small, and it always satisfies ΔT ja <10 °C, and continuous voltage application is maintained all the time;

[0076] During the entire experiment, for workstation 2 (chip 2), the monitored leakage current increases from small to large. Initially, ΔT ja <10 °C, and later ΔT ja ≥10 °C. The voltage application method is switched from continuous voltage application to periodic voltage application;

[0077] As the experiment progresses, for workstation 3 (chip 3), the monitored leakage current exceeds the upper limit, the power is cut off, and the experiment ends prematurely;

[0078] During the entire experiment, for workstation 4 (chip 4), the monitored leakage current decreases from large to small. Initially, ΔT ja ≥10 °C, and later ΔT ja <10 °C. The voltage application method is switched from periodic voltage application to continuous voltage application;

[0079] During the entire experiment when applying voltage, for workstation 5 (chip 5), the monitored leakage current is relatively large, and it always satisfies ΔT during voltage application ja ≥10 °C, and periodic voltage application is maintained all the time;

[0080] For workstation 6 (chip 6), the initial leakage current is large, and as the experiment progresses, the monitored leakage current exceeds the upper limit, the power is cut off, and the experiment ends prematurely.

[0081] Leakage current detection is a mature technology in high-temperature and high-humidity aging equipment. For example, a current sensor or a current detection resistor can be used to collect signals, and then the signals are amplified by an isolation amplifier. Finally, the signals are converted into digital signals through analog-to-digital conversion (ADC) for analysis and processing.

[0082] The switching between continuous voltage application and periodic voltage application is controlled by program logic. The microcontroller maintains the state of each device (continuous power supply or periodic power supply) and responds to the state switching.

[0083] Taking the timer with 1 hour of pressurization (outputting high level) and 1 hour of stopping pressurization (outputting low level) as an example. First, the clock needs to be set. Use the main clock (such as 48 MHz) to set a timer to run with a long time period. Then, apply logical control. Use a flag bit relay_state to record the current state, flip the flag bit periodically and control the output pin.

[0084] The following is the example code (based on the MSPM0G3507 model microcontroller):

[0085]

[0086]

[0087]

[0088] If the periodic pressurization method is 1 hour of pressurization and 1 hour of non-pressurization, then calculate the average effective monitored leakage current within 2H. Among them, the effective monitored leakage current refers to that only when the leakage current data is greater than the device error value will it be counted, to avoid including the leakage current during non-pressurization in the average value.

[0089] Assume that the minimum value of the device monitored current is Imin = 10 nA, and assume that the monitored current data is collected once per minute. Then there are 120 data points in 2H.

[0090] For these 120 data points I 1 , I 2 ……I 120 Perform processing, eliminate invalid data. When Ix < 10 * Imin, determine that the data is invalid and eliminate this data point; calculate the effective monitored current, that is, calculate the average value of the remaining data points. When the difference between the chip junction temperature and the cavity ambient temperature at a certain station satisfies the judgment condition, a certain station needs to switch from continuous pressurization to periodic pressurization, or from periodic pressurization to continuous pressurization. For devices with continuous power supply, continuously output HIGH level in the software logic; for periodic pressurization, it is achieved by driving a switching element (such as a relay or MOSFET) through a control circuit (such as a microcontroller), and the power supply state is switched by timing control.

Claims

1. A high temperature and high humidity reverse bias aging test method compatible with continuous periodic pressurization, comprising an array of test units, wherein each group of test units is used to test a device under test (DUT) in a high pressure and high humidity environment, and the method comprises: The device under test (DUT) is controlled to be in a sealed cavity container, and the temperature and relative humidity in the container are kept constant at 85°C and 85% respectively, and the gate connection terminal and the drain-source connection terminal are led out for the DUT without destroying the airtightness of the container; After the temperature and humidity of the container are stable, set the pressurization mode according to the initial leakage of the test unit; obtain the initial leakage current of each device under test DUT. For n devices under test DUT, the initial leakage currents are I S1 , I S2 …I Sn ; Set the initial pressure mode for the device under test DUT according to the initial leakage current of each device under test DUT obtained; After setting the initial pressure mode, each device under test DUT is monitored in real time, and the monitoring cycle is S1, so as to obtain the real-time leakage current of each device under test DUT. The real-time leakage currents of n devices under test DUT are I t1 , I t2 …I tn ; Based on real-time leakage current monitoring, determine the junction temperature T of each device under test DUT j1 , T j2 …T jn ; According to the junction temperature T of each device under test DUT j1 , T j2 …T jn , and further determine the pressure application method for each device under test DUT.

2. A high temperature and high humidity reverse bias aging test method compatible with continuous periodic pressurization according to claim 1, characterized in that: Based on the initial leakage current I obtained for each device under test DUT S1 , I S2 …I Sn An initial pressurization method is set for the device under test DUT. For each device under test DUT with a smaller initial leakage current, the pressurization method corresponding to the device under test DUT is a continuous pressurization method. For each device under test DUT with a larger initial leakage current, the pressurization method corresponding to the device under test DUT is a periodic pressurization method.

3. The high temperature and high humidity reverse bias aging test method compatible with continuous periodic pressurization according to claim 1, characterized in that: Based on real-time leakage current monitoring, determine the junction temperature T of each device under test DUT j1 , T j2 …T jn ; Within the monitoring period S2, the real-time leakage current I S1 , I S2 …I Sn When both are greater than the set leakage current threshold, the junction temperature T of each device under test DUT is output. j1 , T j2 …T jn。 4. The high temperature and high humidity reverse bias aging test method compatible with continuous periodic pressurization according to claim 1, characterized in that: Further determination of the stressing methods for each device under test (DUT) includes: According to the junction temperature T of each device under test DUT j1 , T j2 …T jn And the ambient temperature T of each device under test DUT a1 , T a2 …T an ; Calculate the temperature difference ΔT of each DUT ja1， ΔT ja2 …ΔT jan ; ΔT ja1 =T j1- T a1； ΔT ja2 =T j2- T a2； …… ΔT jan =T jn- T an； Among them, T j1 , T j2 …T jn is the junction temperature of each device under test DUT; T a1 , T a2 …T an The ambient temperature of each device under test (DUT). The temperature difference of each device under test DUT is judged. When the temperature difference of the device under test DUT is less than 10° C., the pressurization method for the device under test DUT is a continuous pressurization method. Otherwise, the pressurization method for the device under test DUT is a periodic pressurization method.

5. A high temperature and high humidity reverse bias aging test method compatible with continuous periodic pressurization according to claim 4, characterized in that: The junction temperature T of each device under test DUT j1 , T j2 …T jn : Thermal resistance Rth from the junction of the device under test (DUT) to the environment ja , calculation of the DUT current I and the DUT withstand voltage U; T jn＝ T a(n) +U*I*Rth ja(n)； Among them, Rth ja(n) is the thermal resistance from the DUT junction to the environment, I is the current of the DUT; U is the voltage that the DUT is subjected to, T a(n) The real-time ambient temperature.

6. A high temperature and high humidity reverse bias aging test method compatible with continuous periodic pressurization according to claim 4, characterized in that: The junction temperature T of each device under test DUT j1 , T j2 …T jn :Use thermocouple to detect the shell temperature T of the device under test DUT c , the thermal resistance Rth from the junction of the device under test DUT to the package case jc , calculation of the DUT current I and the DUT withstand voltage U; T jn＝ T c(n) +U*I*Rth jc(n)； Among them, Rth jc(n) is the thermal resistance from the DUT junction to the package shell, I is the DUT current; U is the voltage that the DUT withstands, T c(n) It is the real-time case temperature of the device under test (DUT).

7. The high temperature and high humidity reverse bias aging test method compatible with continuous periodic pressurization according to claim 1, characterized in that: The test unit includes a current acquisition module, an isolation amplifier module, an analog-to-digital conversion module, a microcontroller and a relay control module; the current acquisition module is used to collect the current of the drain and source, and transmit the collected drain current to the isolation amplifier module, the isolation amplifier module is used to amplify the current and transmit the processed current to the microcontroller, the microcontroller sends a control signal to the relay control module, the relay control module is connected to the drain of the device under test DUT, and is used to control the voltage applied to the drain.

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