Automatic test system for GaN power amplifier chip

Abstract

The invention discloses an automatic testing system for a GaN power amplifier chip, and relates to the technical field of semiconductor testing. The test environment is automatically initialized through the integrated test control module, the test signals are configured, and corresponding test signal types and parameters are automatically selected and configured according to test requirements input by a user. A mechanical control algorithm is utilized, and the system can automatically connect and disconnect a test equipment port and a port of a power amplifier chip, so that the complexity and errors of manual operation are eliminated, and the test efficiency and accuracy are improved; the test data collection module calculates and records key test performance parameters of the GaN power amplifier in real time, the collected test data are calibrated, analyzed and calculated, detailed test result data are generated, more comprehensive performance evaluation is provided, and a user is helped to understand the performance characteristics of the GaN power amplifier more deeply.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor testing, and particularly to an automated testing system for GaN power amplifier chips. Background Art

[0002] Semiconductor testing technology is an indispensable part of the semiconductor industrial chain. With the continuous progress of technology and the increasing complexity of the scale of SoC (System-on-Chip), the importance of semiconductor testing in projects is also getting higher and higher. A GaN power amplifier is a power amplifier made based on gallium nitride (GaN) material. The working principle of a GaN power amplifier is similar to that of other types of power amplifiers, which is to amplify the input low-power signal into a high-power signal. However, due to the excellent properties of the GaN material, a GaN power amplifier can work in a higher frequency and a larger power range while maintaining lower distortion and noise.

[0003] In the field of testing GaN power amplifier chips, traditional manual testing methods have many deficiencies. First of all, the manual testing process is cumbersome and time-consuming. Testers need to manually configure test signals, connect test equipment, and record and analyze test results, which not only increases the testing cost but also limits the testing efficiency. Secondly, manual testing is easily affected by human factors, and it is difficult to guarantee the accuracy and consistency of test results. In addition, with the continuous improvement of the performance of GaN power amplifier chips, the requirements for testing accuracy are also getting higher and higher, and traditional manual testing methods are difficult to meet this demand.

[0004] In view of the above problems, it is necessary to propose an automated testing system for GaN power amplifier chips. Summary of the Invention

[0005] The purpose of the present invention is to solve the problems existing in the background art and to propose an automated testing system for GaN power amplifier chips.

[0006] The purpose of the present invention can be achieved by the following technical solutions:

[0007] An automated testing system for GaN power amplifier chips includes a test control module, a test data collection module, an analysis and processing module, a result evaluation module, and a report generation module.

[0008] The test control module is responsible for initializing the test environment, configuring test signals, and controlling the interaction between the GaN power amplifier chip to be tested and the test hardware device.

[0009] Initialize the test signals generated by the signal source, select the corresponding test signal type according to the test requirements input by the user, and configure its signal parameters. The test signal types include but are not limited to sine waves, square waves, and triangular waves.

[0010] Among them, the test requirements input by the user include but are not limited to: frequency response, large signal test, gain, linear metric, overload test, frequency bandwidth, frequency component processing, and distortion.

[0011] When the test requirements input by the user are frequency response, gain, or linear metric, a sine wave is selected; its time-domain expression is: where A is the preset initial amplitude, f is the preset initial frequency, is the preset initial phase;

[0012] When the test requirements input by the user are large signal test or overload test, a square wave is selected; its time-domain expression is: where sgn is the sign function, used to represent the characteristics of the square wave. In the positive half-cycle of is +1, and in the negative half-cycle of is -1; where A is the preset initial amplitude, f is the preset initial frequency, is the preset initial phase;

[0013] When the test requirements input by the user are frequency bandwidth, frequency component processing, or distortion, a triangular wave is selected.

[0014] Its time-domain expression is: where represents rounding down ; where A is the preset initial amplitude, f is the preset initial frequency, is the preset initial phase.

[0015] As a preferred embodiment of the present invention, a mechanical control algorithm is used to control the ports of the test equipment and the ports of the power amplifier chip to perform automatic connection and disconnection control. The specific process is as follows:

[0016] Before the test starts, a preset port connection scheme vector C(j) = {C(1), C(2),..., C(m)} is matched according to the test requirements input by the user; where j is the port number of the GaN power amplifier, and m is the total number of ports of the GaN power amplifier; each element in the port connection scheme vector corresponds to each port of the GaN power amplifier, and its specific value represents the connection requirements of the corresponding GaN power amplifier port. When the value of C(j) is 1, it means that port j needs to be connected to the test equipment, and when the value of C(j) is 0, it means that port j does not need to be connected to the test equipment.

[0017] During the testing process, the connection status of the ports of the test equipment and each port of the GaN power amplifier is monitored in real time through sensors and hardware drivers, and a port connection status vector S(j) = {S(1), S(2),..., S(m)} is output. Each element in the port connection status vector corresponds one by one to each port of the GaN power amplifier, and its specific value represents the actual connection status of the corresponding port of the GaN power amplifier. When the value of S(j) is 1, it means that port j is already connected to the test equipment; when the value of S(j) is 0, it means that port j is not connected to the test equipment.

[0018] At preset time intervals, connection determination is performed on all ports. By comparing the preset port connection scheme vector with the real-time port status vector, it is determined whether each port is correctly connected according to the test requirements. For each port j of the GaN power amplifier, the values of C(j) and S(j) are obtained; if C(j) = S(j), it is determined that the port connection status is correct; if C(j) = 1 and S(j) = 0, it is determined that the port connection status is incorrect and a connection operation needs to be performed; if C(j) = 0 and S(j) = 1, it is determined that the port connection status is correct and a disconnection operation needs to be performed.

[0019] As a preferred embodiment of the present invention, automatic connection and disconnection control are performed according to the connection determination results of all ports; when it is determined that the connection status of port j is incorrect and a connection operation needs to be performed, the connection mechanical control program of port j is started; port j is driven to adjust to a preset target position and dock with the port of the test equipment at the target position; subsequently, the port connection status element S(j) of port j is updated to 1.

[0020] When it is determined that the connection status of port j is incorrect and a disconnection operation needs to be performed, the disconnection mechanical control program of port j is started; port j is driven in the reverse direction to disconnect and move away from the port of the test equipment until a preset safe disconnection is achieved; subsequently, the port connection status element S(j) of port j is updated to 0.

[0021] The test data collection module is responsible for calculating in real time the test performance parameters of the GaN power amplifier, including the output voltage V out , load resistance R load , reflected signal voltage V ref (f) at each test signal frequency f, incident signal voltage V incident (f) at each test signal frequency f, input power V out , output power P out and input power P in .

[0022] The analysis and processing module is responsible for performing arithmetic processing on the test index data sent by the data collection module and generating corresponding test result data.

[0023] Adjust the frequency f of the input signal, and record the reflected signal voltage V when the test signal frequency f is the eigenvalue f0 ref (f0) and the incident signal voltage V incident (f0).

[0024] Through a preset formula Calculate the output characteristic power P out And the characteristic return loss RL(f0).

[0025] As a preferred embodiment of the present invention, adjust the frequency f of the input signal, with the adjustment range being (0, fmax), calculate the return loss RL(f0) corresponding to different frequencies f, generate a return loss - frequency graph, and display a graph showing the variation of the return loss with frequency.

[0026] As a preferred embodiment of the present invention, through a preset regression function Fit the functional relationship between the return loss RL(f) and the input signal frequency f in the return loss - frequency graph, and solve for the values of λ1, λ2, λ3, and λ4; where λ1, λ2, λ3, and λ4 are the regression fitting parameters to be determined; RL min Is the minimum return loss in the return loss - frequency graph.

[0027] As a preferred embodiment of the present invention, through a preset formula Calculate the return loss regression anomaly parameter E(RL); where And Are both standard values of the regression fitting parameters.

[0028] As a preferred embodiment of the present invention, through a preset formula Calculate the gain G;

[0029] As a preferred embodiment of the present invention, adjust the frequency f of the input signal, with the adjustment range being (0, fmax). Calculate the maximum gain Gmax and the corresponding frequency fc generated during the frequency adjustment, and through a preset formula Calculate the gain magnitude |H(f)| and the gain phase θ(f); where fr is a preset cut-off frequency; where β is a preset attenuation factor, γ is a preset phase tilt factor; where u is the imaginary unit and u×u = -1.

[0030] As a preferred embodiment of the present invention, through a preset formula Calculate the gain flatness ΔG; where And Are respectively the maximum and minimum values of the gain G obtained during the process of adjusting the frequency f of the input signal from 0 to fmax.

[0031] The result evaluation module analyzes the test performance of the GaN power amplifier chip based on the arithmetic processing of the analysis and processing module.

[0032] If the output characteristic power P out is greater than the preset maximum threshold, it is determined that the chip operating state is abnormal; if the output characteristic power P out is less than the preset minimum threshold, it is determined that there is signal attenuation or circuit failure.

[0033] If the characteristic return loss RL(f0) does not belong to the preset reasonable fluctuation range of the characteristic return loss, and the return loss regression abnormal parameter E(RL) is greater than the preset threshold, it is determined that there is a serious signal reflection phenomenon.

[0034] If the maximum gain Gmax does not belong to the preset reasonable range, the gain amplitude |H(f)| and the gain phase θ(f) are further determined; if the gain amplitude |H(f)| is greater than the preset threshold, it is determined that there is an abnormal signal gain; if the gain phase θ(f) does not belong to the preset reasonable fluctuation range of the gain phase, it is determined that the gain of the GaN power amplifier chip may be too high or too low at some frequency points, resulting in signal distortion, saturation or overload, affecting the overall performance of the GaN power amplifier.

[0035] If the gain flatness ΔG is greater than the preset threshold, it is determined that the fluctuation of the gain within the entire operating frequency band is too large, resulting in unstable signal output.

[0036] The report generation module is responsible for collecting and integrating the data during the test, collecting detailed results on the performance of the GaN power amplifier chip during the test, including the specific values of the output characteristic power P out , the characteristic return loss RL(f0), the return loss regression abnormal parameter E(RL), the maximum gain Gmax, the gain amplitude |H(f)|, the gain phase θ(f) and the gain flatness ΔG, and the relevant determination results. The final test report is generated to generate a report for users to view and analyze.

[0037] Compared with the prior art, the beneficial effects of the present invention are:

[0038] 1. The present invention automatically initializes the test environment, configures the test signal through the integrated test control module, and automatically selects and configures the corresponding test signal type and parameters according to the test requirements input by the user. Using the mechanical control algorithm, the system can automatically connect and disconnect the ports of the test equipment and the ports of the power amplifier chip, thus eliminating the cumbersome and errors of manual operation, and improving the test efficiency and accuracy;

[0039] 2. The test data collection module of the present invention calculates and records in real time the key test performance parameters of the GaN power amplifier, such as the output terminal voltage, input power, output power, etc. Calibrate and analyze the collected test data to generate detailed test result data, including key indicators such as output characteristic power, characteristic return loss, gain, etc. Through advanced analysis such as generating a return loss - frequency graph, fitting the function relationship between the return loss and the input signal frequency, calculating the gain amplitude and phase, and gain flatness, the system can provide a more comprehensive performance evaluation to help users understand the performance characteristics of the GaN power amplifier more deeply.

[0040] 3. According to the operation and processing results of the analysis and processing module, the present invention accurately evaluates the performance of the GaN power amplifier chip, including judging whether the chip working state is abnormal, whether there is signal reflection, signal gain abnormality and other problems. It provides a convenient way for users to track and compare the performance of different GaN power amplifier chips, so as to make decisions on the evaluation of test results. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] For the convenience of those skilled in the art to understand, the present invention will be further described below with reference to the accompanying drawings:

[0042] Figure 1 is the system block diagram of the present invention;

[0043] Figure 2 is the schematic diagram of the return loss - frequency graph proposed in the embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0044] The technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative work shall fall within the protection scope of the present invention.

[0045] Please refer to Figure 1 as shown, an automated test system for GaN power amplifier chips includes a test control module, a test data collection module, an analysis and processing module, a result evaluation module, and a report generation module.

[0046] The test control module is responsible for initializing the test environment, configuring the test signal, and controlling the interaction between the GaN power amplifier chip to be tested and the test hardware device.

[0047] Initialize the test signal generated by the signal source, select the corresponding test signal type according to the test requirements input by the user and configure its signal parameters. The test signal types include, but are not limited to, sine wave, square wave, and triangular wave.

[0048] Among them, the test requirements input by the user include but are not limited to: frequency response, large-signal test, gain, linear metric, overload test, frequency bandwidth, frequency component processing, and distortion.

[0049] When the test requirements input by the user are frequency response, gain, or linear metric, a sine wave is selected; its time-domain expression is: where A is the preset initial amplitude, f is the preset initial frequency, is the preset initial phase;

[0050] When the test requirements input by the user are large-signal test or overload test, a square wave is selected; its time-domain expression is: where sgn is the sign function, used to represent the square-wave characteristic, which is +1 in the positive half-cycle of and -1 in the negative half-cycle of ; where A is the preset initial amplitude, f is the preset initial frequency, is the preset initial phase;

[0051] When the test requirements input by the user are frequency bandwidth, frequency component processing, or distortion, a triangular wave is selected.

[0052] Its time-domain expression is: where represents rounding down ; where A is the preset initial amplitude, f is the preset initial frequency, is the preset initial phase;

[0053] Furthermore, a mechanical control algorithm is used to control the ports of the test equipment and the ports of the power amplifier chip for automatic connection and disconnection control. The specific process is as follows:

[0054] Before the test starts, a preset port connection scheme vector C(j) = {C(1), C(2),..., C(m)} is matched according to the test requirements input by the user; where j is the port number of the GaN power amplifier, and m is the total number of ports of the GaN power amplifier; each element in the port connection scheme vector corresponds to each port of the GaN power amplifier, and its specific value represents the connection requirement of the corresponding GaN power amplifier port. When the value of C(j) is 1, it means that port j needs to be connected to the test equipment, and when the value of C(j) is 0, it means that port j does not need to be connected to the test equipment.

[0055] During the test, the connection status of the ports of the test equipment and each port of the GaN power amplifier is monitored in real time through sensors and hardware drivers, and a port connection status vector S(j) = {S(1), S(2),..., S(m)} is output. Each element in the port connection status vector corresponds one-to-one with each port of the GaN power amplifier, and its specific value represents the actual connection status of the corresponding port of the GaN power amplifier. When the value of S(j) is 1, it means that port j is already connected to the test equipment; when the value of S(j) is 0, it means that port j is not connected to the test equipment.

[0056] At preset time intervals, connection determination is performed on all ports. By comparing the preset port connection scheme vector with the real-time port status vector, it is determined whether each port is correctly connected according to the test requirements. For each port j of the GaN power amplifier, the values of C(j) and S(j) are obtained; if C(j) = S(j), it is determined that the port connection status is correct; if C(j) = 1 and S(j) = 0, it is determined that the port connection status is incorrect and a connection operation needs to be performed; if C(j) = 0 and S(j) = 1, it is determined that the port connection status is correct and a disconnection operation needs to be performed.

[0057] Furthermore, automatic connection and disconnection control are performed according to the connection determination results of all ports; when it is determined that the connection status of port j is incorrect and a connection operation needs to be performed, the connection mechanical control program of port j is started; port j is driven to adjust to a preset target position and dock with the port of the test equipment at the target position; subsequently, the port connection status element S(j) of port j is updated to 1.

[0058] When it is determined that the connection status of port j is incorrect and a disconnection operation needs to be performed, the disconnection mechanical control program of port j is started; port j is driven in the reverse direction to disconnect and move away from the port of the test equipment until a preset safe disconnection is achieved; subsequently, the port connection status element S(j) of port j is updated to 0.

[0059] The test data collection module is responsible for calculating in real time the test performance parameters of the GaN power amplifier, including the output voltage V out , load resistance R load , reflected signal voltage V ref (f) at each test signal frequency f, incident signal voltage V incident (f) at each test signal frequency f, input power V out , output power P out and input power P in .

[0060] The analysis and processing module is responsible for performing arithmetic processing on the test index data sent by the data collection module and generating corresponding test result data.

[0061] Adjust the frequency f of the input signal, and record the reflected signal voltage V when the test signal frequency f is the eigenvalue f0 ref (f0) and the incident signal voltage V incident (f0).

[0062] Through a preset formula Calculate the output characteristic power P out and the characteristic return loss RL(f0).

[0063] Please refer to Figure 2 As shown, adjust the frequency f of the input signal, with the adjustment range being (0, fmax), calculate the return loss RL(f0) corresponding to different frequencies f, generate a return loss - frequency graph, and display the graph showing the variation of the return loss with frequency.

[0064] Furthermore, through a preset regression function Fit the functional relationship between the return loss RL(f) and the input signal frequency f in the return loss - frequency graph, and solve for the values of λ1, λ2, λ3, and λ4; where λ1, λ2, λ3, and λ4 are the regression fitting parameters to be determined; RL min is the minimum return loss in the return loss - frequency graph.

[0065] Furthermore, through a preset formula Calculate the return loss regression anomaly parameter E(RL); where and are both the standard values of the regression fitting parameters.

[0066] Furthermore, through a preset formula Calculate the gain G;

[0067] Furthermore, adjust the frequency f of the input signal, with the adjustment range being (0, fmax). Calculate the maximum gain Gmax and the corresponding frequency fc generated during the frequency adjustment, and through a preset formula Calculate the gain magnitude |H(f)| and the gain phase θ(f); where fr is the preset cut - off frequency; where β is the preset attenuation factor, γ is the preset phase tilt factor; where u is the imaginary unit, and u×u = - 1.

[0068] Furthermore, through a preset formula Calculate the gain flatness ΔG; where and are respectively the maximum and minimum values of the gain G obtained during the process of adjusting the frequency f of the input signal from 0 to fmax.

[0069] The result evaluation module conducts an analysis of the test performance of the GaN power amplifier chip based on the arithmetic processing of the analysis and processing module.

[0070] If the output characteristic power P out is greater than the preset maximum threshold, it is determined that the chip is operating abnormally; if the output characteristic power P out is less than the preset minimum threshold, it is determined that there is signal attenuation or a circuit fault.

[0071] If the characteristic return loss RL(f0) does not belong to the preset reasonable fluctuation range of the characteristic return loss, and the return loss regression anomaly parameter E(RL) is greater than the preset threshold, it is determined that there is a serious signal reflection phenomenon.

[0072] If the maximum gain Gmax does not belong to the preset reasonable range, the gain magnitude |H(f)| and the gain phase θ(f) are further determined; if the gain magnitude |H(f)| is greater than the preset threshold, it is determined that there is an abnormal signal gain; if the gain phase θ(f) does not belong to the preset reasonable fluctuation range of the gain phase, it is determined that the gain of the GaN power amplifier chip may be too high or too low at some frequency points, resulting in signal distortion, saturation or overload, affecting the overall performance of the GaN power amplifier.

[0073] If the gain flatness ΔG is greater than the preset threshold, it is determined that the fluctuation of the gain within the entire operating frequency band is too large, resulting in unstable signal output.

[0074] The report generation module is responsible for collecting and integrating the data during the test process, collecting detailed results regarding the performance of the GaN power amplifier chip during the test, including the specific values of the output characteristic power P out , the characteristic return loss RL(f0), the return loss regression anomaly parameter E(RL), the maximum gain Gmax, the gain magnitude |H(f)|, the gain phase θ(f), and the gain flatness ΔG, as well as the relevant determination results. The final test report is generated to generate a report that can be viewed and analyzed by the user.

[0075] It should be understood that the terms "including" and "comprising" used in the specification and claims of this disclosure indicate the presence of the described features, wholes, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or their combinations.

[0076] It should also be understood that the terms used in this disclosure specification are merely for the purpose of describing specific embodiments and are not intended to limit this disclosure. As used in this disclosure specification and claims, unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" are intended to include the plural forms.

[0077] The preferred embodiments of the present invention disclosed above are only used to help illustrate the present invention. The preferred embodiments do not describe all the details in detail, nor do they limit the invention to only the specific implementation manners. Obviously, many modifications and variations can be made according to the content of this specification. These embodiments are selected and specifically described in this specification in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can well understand and utilize the present invention. The present invention is only limited by the claims and their full scope and equivalents.

Claims

1. A GaN power amplifier chip automated test system, comprising a test control module, a test data collection module and an analysis and processing module, characterized in that: The test control module is responsible for initializing the test environment, configuring the test signal and controlling the interaction between the GaN power amplifier chip to be tested and the test hardware equipment; initializing the test signal generated by the signal source, selecting the corresponding test signal type and configuring its signal parameters according to the test requirements input by the user. The test signal types include sine wave, square wave and triangle wave; using the mechanical control algorithm to control the test equipment port and the power amplifier chip port for automatic connection and disconnection control; The test data collection module is responsible for real-time calculation of the test performance parameters of the GaN power amplifier, including output voltage, load resistance, reflected signal voltage at each test signal frequency f, incident signal voltage at each test signal frequency f, input power, output power and input power; The analysis and processing module is responsible for calculating and processing the test index data sent by the data acquisition module, and generating corresponding test result data, including output characteristic power, characteristic return loss, return loss regression abnormality parameter, maximum gain, gain amplitude, gain phase and gain flatness.

2. The GaN power amplifier chip automatic test system according to claim 1, characterized in that: It also includes result evaluation module and report generation module; The result evaluation module performs GaN power amplifier chip test performance analysis based on the calculation processing of the analysis and processing module; The report generation module is responsible for collecting and integrating the data during the test process. During the test process, detailed results about the performance of the GaN power amplifier chip are collected, including the specific values ​​and related judgment results of the output characteristic power, characteristic return loss, return loss regression abnormal parameters, maximum gain, gain amplitude, gain phase and gain flatness; the final test report is generated, and a report is generated for users to view and analyze.

3. The GaN power amplifier chip automatic test system according to claim 1, characterized in that: User-entered test requirements include: frequency response, large signal testing, gain, linearity metrics, overload testing, frequency bandwidth, frequency content processing, and distortion.

4. The GaN power amplifier chip automatic test system according to claim 1 or 3, characterized in that: The specific process of selecting the corresponding test signal type and configuring its signal parameters according to the test requirements input by the user is as follows: When the test requirement input by the user is frequency response, gain or linearity measurement, select sine wave; Its time domain expression is: Where A is the preset initial amplitude, f is the preset initial frequency, is the preset initial phase; When the test requirement input by the user is a large signal test or an overload test, a square wave is selected; Its time domain expression is: Where sgn is the sign function used to represent the square wave characteristics. The positive half cycle is positive 1, The negative half cycle is negative 1; where A is the preset initial amplitude, f is the preset initial frequency, is the preset initial phase; When the test requirement input by the user is frequency bandwidth, frequency component processing or distortion, the triangle wave is selected; Its time domain expression is: in Express Round down; where A is the preset initial amplitude, f is the preset initial frequency, is the preset initial phase.

5. The GaN power amplifier chip automatic test system according to claim 1, characterized in that: The specific process of using the mechanical control algorithm to control the test equipment port and the power amplifier chip port is: Before the test starts, a preset port connection scheme vector C(j)={C(1), C(2), ..., C(m)} is matched according to the test requirements input by the user; wherein j is the port number of the GaN power amplifier, and m is the total number of ports of the GaN power amplifier; each element in the port connection scheme vector corresponds to each port of the GaN power amplifier one by one, and its specific value represents the connection requirement of the corresponding GaN power amplifier port; when the value of C(j) is 1, it means that port j needs to be connected to the test equipment, and when the value of C(j) is 0, it means that port j does not need to be connected to the test equipment; During the test, the connection status between the test equipment port and each port of the GaN power amplifier is monitored in real time through sensors and hardware drivers, and a port connection state vector S(j)={S(1), S(2), ..., S(m)} is output; each element in the port connection state vector corresponds to each port of the GaN power amplifier, and its specific value represents the actual connection status of the corresponding GaN power amplifier port; when the value of S(j) is 1, it means that port j has been connected to the test equipment, and when the value of S(j) is 0, it means that port j is not connected to the test equipment; Perform connection determination on all ports at preset time intervals, compare the preset port connection scheme vector with the real-time port state vector, and determine whether each port is correctly connected according to the test requirements; for each port j of the GaN power amplifier, obtain the values ​​of C(j) and S(j); if C(j)=S(j), the port connection state is determined to be correct; if C(j)=1 and S(j)=0, the port connection state is determined to be wrong and a connection operation needs to be performed; if C(j)=0 and S(j)=1, the port connection state is determined to be correct and a disconnection operation needs to be performed; Automatic connection and disconnection control is performed based on the connection judgment results of all ports.

6. The GaN power amplifier chip automatic test system according to claim 5, characterized in that: The connection operation is specifically as follows: Start the connection mechanical control program of port j; drive port j to adjust to the preset target position and connect with the test equipment port at the target position; then, update the port connection state element S(j) of port j to 1.

7. The GaN power amplifier chip automatic test system according to claim 5, characterized in that: The disconnection operation is specifically as follows: Start the disconnection mechanical control program of port j; reverse drive port j to disconnect and move away from the test equipment port until a preset safety disconnection is achieved; then, update the port connection state element S(j) of port j to 0.

8. The GaN power amplifier chip automatic test system according to claim 1, characterized in that: The specific process of computing and processing the test index data is as follows: Adjust the frequency f of the input signal and record the reflected signal voltage V when the test signal frequency f is the characteristic value f0 ref (f0) and the incident signal voltage V incident (f0); By preset formula Calculate the output characteristic power P out and characteristic return loss RL(f0); Adjust the frequency f of the input signal within the range of (0, fmax), calculate the return loss RL(f0) corresponding to different frequencies f, generate a return loss-frequency graph, and display a graph showing how the return loss changes with frequency; Through the preset regression function Fit the function relationship between the return loss RL(f) and the input signal frequency f in the return loss-frequency diagram to solve the values ​​of λ1, λ2, λ3 and λ4; where λ1, λ2, λ3 and λ4 are the regression fitting parameters to be determined; RL min is the minimum return loss in the return loss-frequency graph; By preset formula Calculate the return loss regression anomaly parameter E(RL); where and All are standard values ​​of regression fitting parameters; By preset formula Calculate the gain G; Adjust the frequency f of the input signal within the range of (0, fmax); calculate the maximum gain Gmax and the corresponding frequency fc generated during frequency adjustment, using the preset formula Calculate the gain amplitude |H(f)| and the gain phase θ(f); wherein fr is a preset cutoff frequency; wherein β is a preset attenuation factor, and γ is a preset phase tilt factor; wherein u is an imaginary unit, and u×u=-1; By preset formula Calculate the gain flatness ΔG; where They are respectively the maximum and minimum values ​​of the gain G obtained when the input signal adjusts the frequency f from 0 to fmax.

9. The GaN power amplifier chip automatic test system according to claim 2, characterized in that: The specific process of testing and analyzing the performance of GaN power amplifier chips is as follows: If the output characteristic power P out If the output characteristic power P is greater than the preset maximum threshold, the chip is judged to be in an abnormal working state; out If it is less than the preset minimum threshold, it is determined that there is signal attenuation or circuit failure; If the characteristic return loss RL(f0) does not fall within the preset reasonable fluctuation range of the characteristic return loss, and the return loss regression abnormal parameter E(RL) is greater than the preset threshold, it is determined that there is a serious signal reflection phenomenon; If the maximum gain Gmax does not fall within the preset reasonable range, the gain amplitude |H(f)| and the gain phase θ(f) are further determined; if the gain amplitude |H(f)| is greater than the preset threshold, it is determined that there is a signal gain anomaly; If the gain phase θ(f) does not fall within the preset reasonable gain phase fluctuation range, it is determined that the gain of the GaN power amplifier chip is too high or too low at certain frequency points, resulting in signal distortion, saturation or overload, affecting the overall performance of the GaN power amplifier; If the gain flatness ΔG is greater than a preset threshold, it is determined that the gain fluctuation in the entire operating frequency band is too large, resulting in unstable signal output.

Images