Magnetic sensor and current sensor

Abstract

The invention provides a magnetic sensor and a current sensor. The current sensor has multiple linearity with respect to the measured current. A magnetic sensor (60) is provided with: a substrate (61) which is provided on a conductor (24) and on which a plurality of blocks are disposed on one surface, the plurality of blocks including first blocks (62a, 63a) and second blocks (62b, 63b) that are positioned in the vicinity and distant from the center of the conductor, respectively, so as to face each other; and a plurality of magnetoresistive elements (51) disposed on the substrate, some of the plurality of magnetoresistive elements being disposed in the first block, and the other of the plurality of magnetoresistive elements being disposed in the second block, the first and second blocks each including first sub-blocks (62a1, 63a1, 62b1, 63b1) in which magnetoresistive elements (51) having the same magnetosensitive direction are disposed, and second sub-blocks (62a1, 63a1, 62b1, 63b1) in which magnetoresistive elements (51) having the same magnetosensitive direction are disposed. The magnetoresistive elements in the first sub-blocks (62a1, 63a1, 62b1, 63b1) of the first and second blocks (62a, 63a, 62b, 63b) are connected in series to form a resistance arm (R1).

Description

Technical Field

[0001] The present invention relates to a magnetic sensor and a current sensor. Background Art

[0002] By using a dual-linear current sensor having two linear regions with different sensitivities, for example, it is possible to measure a current with high resolution within a range within a detection limit during normal times and measure a current with low resolution within a range exceeding the detection limit during a fault. In Patent Documents 1 and 2, a dual-linear current sensor is configured by making the amplification factor of an amplifier variable based on the output voltage of a current detector. However, since an amplifier is required, the chip area for forming the sensor increases. In addition, in Patent Document 3, a dual-linear current sensor is configured by connecting in series a magnetoresistive element having high sensitivity and magnetic saturation and a magnetoresistive element having low sensitivity and no magnetic saturation. However, the process for forming two types of magnetoresistive elements having different structures on the same chip becomes complicated.

[0003] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2010-197065

[0004] Patent Document 2: U.S. Patent No. 9,523,742

[0005] Patent Document 3: U.S. Patent Application Publication No. 2019 / 279804 Summary of the Invention

[0006] Means for Solving the Problems

[0007] In a first aspect of the present invention, there is provided a magnetic sensor including: a substrate provided on a conductor and having a plurality of blocks arranged on one surface, the plurality of blocks including a first block and a second block, the first block and the second block being respectively located near and far from the center of the conductor relative to each other; and a plurality of magnetoresistive elements arranged on the substrate, a part of the plurality of magnetoresistive elements being arranged in the first block and another part being arranged in the second block, the first block and the second block each including a first sub-block, the first sub-block being provided with magnetoresistive elements having the same magnetic sensitive direction as each other, and the magnetoresistive elements in the first sub-block of the first block and the magnetoresistive elements in the first sub-block of the second block being connected in series to form a first resistance arm.

[0008] In a second aspect of the present invention, there is provided a current sensor including the conductor, the magnetic sensor according to the first aspect, and a package for sealing the conductor and the magnetic sensor.

[0009] It should be noted that the above summary of the invention does not list all the features of the present invention. In addition, sub-combinations of these feature groups can also form inventions. Brief Description of the Drawings

[0010] Figure 1A The internal structure of the current sensor according to this embodiment is shown in a top view.

[0011] Figure 1B The internal structure of the current sensor according to this embodiment is shown in a side view.

[0012] Figure 2A An example of the configuration and substrate layout of a full-bridge type magnetic sensor for detecting a horizontal magnetic field is shown.

[0013] Figure 2B The structure of the magnetoresistive element is shown in a side view.

[0014] Figure 3 The circuit structure of a full-bridge type magnetic sensor (two magnetoelectric conversion parts) and the magnetic field detection direction of the magnetoresistive element are shown.

[0015] Figure 4 The magnetoresistance changes of the magnetoresistive elements in the first and second blocks and the entire sensor with respect to the amount of electricity conducted through the conductor are shown.

[0016] Figure 5A An example of the configuration and substrate layout of a half-bridge type magnetic sensor for detecting a horizontal magnetic field is shown.

[0017] Figure 5B The circuit structure of a half-bridge type magnetic sensor (two magnetoelectric conversion parts) and the magnetic field detection direction of the magnetoresistive element are shown.

[0018] Figure 6A A first example of the configuration of the first and second blocks is shown.

[0019] Figure 6B A second example of the configuration of the first and second blocks is shown.

[0020] Figure 6C A third example of the configuration of the first and second blocks is shown.

[0021] Figure 6D A fourth example of the configuration of the first and second blocks is shown.

[0022] Figure 7A The block configuration of the magnetoresistive elements for forming a quadruple linear type current sensor whose sensitivity decreases as the amount of electricity conducted increases using a full-bridge type magnetic sensor is shown.

[0023] Figure 7B The block configuration of the magnetoresistive elements for forming a quadruple linear type current sensor whose sensitivity decreases as the amount of electricity conducted increases using a half-bridge type magnetic sensor is shown.

[0024] Figure 7C shown with respect to the amount of electricity conducted through the conductorFigure 7A and Figure 7B the magnetoresistive elements of four blocks and the magnetoresistive changes of each resistance arm.

[0025] Figure 8A Shows the block configuration of the magnetoresistive elements of a dual-linear type current sensor in which the threshold for overcurrent detection using a full-bridge type magnetic sensor varies according to the amount of current passed.

[0026] Figure 8B Shows the block configuration of the magnetoresistive elements of a dual-linear type current sensor in which the threshold for overcurrent detection using a half-bridge type magnetic sensor varies according to the amount of current passed.

[0027] Figure 8C Shows, with respect to the amount of current passed through a conductor, Figure 8A and Figure 8B the magnetoresistive elements of four blocks and the magnetoresistive changes of each resistance arm.

[0028] Figure 9A Shows the block configuration of the magnetoresistive elements of a multi-linear type current sensor in which the sensitivity changes according to the degree of overcurrent using a full-bridge type magnetic sensor.

[0029] Figure 9B Shows the block configuration of the magnetoresistive elements of a multi-linear type current sensor in which the sensitivity changes according to the degree of overcurrent using a half-bridge type magnetic sensor.

[0030] Figure 9C Shows, with respect to the amount of current passed through a conductor, Figure 9A and Figure 9B the magnetoresistive elements within two blocks and the magnetoresistive changes of each resistance arm.

[0031] Figure 10A Shows the characteristics of the magnetoresistive changes of the magnetoresistive elements within one block or sub-block with respect to magnetization.

[0032] Figure 10B Shows the general formula for the magnetoresistive changes of each resistance arm.

[0033] Figure 11 Shows four ways of the change of the output voltage of the current sensor (i.e., the magnetoresistive change of the magnetic sensor) with respect to the amount of current passed (i.e., (1) logarithmic growth, (2) exponential growth, (3) monotonic increase, and (4) arbitrary increase).

[0034] Figure 12 Shows the polarity of the output voltage of the current sensor (i.e., the magnetoresistive change of the magnetic sensor) with respect to the amount of current passed ((a) unipolar, (b) bipolar symmetric, and (c) bipolar asymmetric).

[0035] Figure 13 Shows Figure 11The manner of change in the output voltage of the current sensor shown is the same as Figure 12 An example of the combination of the polarities shown.

[0036] Figure 14A An example of the block configuration, the magnetic field detection direction, and the direction of the bias magnetic field of a magnetoresistive element having the basic characteristics of the first type I ± is shown.

[0037] Figure 14B Shows Figure 14A the characteristics of the magnetoresistance change with respect to the amount of current passed through the magnetoresistive element shown.

[0038] Figure 15A An example of the block configuration, the magnetic field detection direction, and the direction of the bias magnetic field of a magnetoresistive element having the basic characteristics of the second type II ± is shown.

[0039] Figure 15B Shows Figure 15A the characteristics of the magnetoresistance change with respect to the amount of current passed through the magnetoresistive element shown.

[0040] Figure 16A An example of the block configuration, the magnetic field detection direction, and the direction of the bias magnetic field of a magnetoresistive element having the basic characteristics of the third type III ± is shown.

[0041] Figure 16B Shows Figure 16A the characteristics of the magnetoresistance change with respect to the amount of current passed through the magnetoresistive element shown.

[0042] Figure 17A Shows the type and block configuration of a magnetoresistive element exhibiting (b) two-pole symmetry and (1) logarithmic growth characteristics.

[0043] Figure 17B Shows Figure 17A the characteristics of the magnetoresistance change with respect to the amount of current passed through each block and sensor (each resistance arm) of the magnetoresistive element shown.

[0044] Figure 18A Shows the type and block configuration of a magnetoresistive element exhibiting (b) two-pole symmetry and (2) exponential growth characteristics.

[0045] Figure 18B Shows Figure 18A the characteristics of the magnetoresistance change with respect to the amount of current passed through each block and magnetic sensor (each resistance arm) of the magnetoresistive element shown.

[0046] Figure 19A Shows the type and block configuration of a magnetoresistive element exhibiting (b) two-pole symmetry and (3) monotonic increasing characteristics.

[0047] Figure 19B Shows Figure 19A The characteristics of the magnetoresistance change with respect to the amount of electricity conducted, exhibited by each block of the magnetoresistive element and the magnetic sensors (each resistance arm).

[0048] Figure 20A Shows the types and block configurations of magnetoresistive elements that exhibit (b) bipolar symmetry and (4) arbitrary increase characteristics.

[0049] Figure 20B Shows Figure 20A The characteristics of the magnetoresistance change with respect to the amount of electricity conducted, exhibited by each block of the magnetoresistive element and the magnetic sensors (each resistance arm).

[0050] Figure 21A Shows the types and block configurations of magnetoresistive elements that exhibit (a) unipolar and (1) logarithmic growth characteristics.

[0051] Figure 21B Shows Figure 21A The characteristics of the magnetoresistance change with respect to the amount of electricity conducted, exhibited by each block of the magnetoresistive element and the magnetic sensors (each resistance arm).

[0052] Figure 22A Shows the types and block configurations of magnetoresistive elements that exhibit (a) unipolar and (2) exponential growth characteristics.

[0053] Figure 22B Shows Figure 22A The characteristics of the magnetoresistance change with respect to the amount of electricity conducted, exhibited by each block of the magnetoresistive element and the magnetic sensors (each resistance arm).

[0054] Figure 23A Shows the types and block configurations of magnetoresistive elements that exhibit (a) unipolar and (3) monotonic increase characteristics.

[0055] Figure 23B Is to show Figure 23A The characteristics of the magnetoresistance change with respect to the amount of electricity conducted, exhibited by each block of the magnetoresistive element and the magnetic sensors (each resistance arm).

[0056] Figure 24A Shows the types and block configurations of magnetoresistive elements that exhibit (a) unipolar and (4) arbitrary increase characteristics.

[0057] Figure 24B Shows Figure 24A The characteristics of the magnetoresistance change with respect to the amount of electricity conducted, exhibited by each block of the magnetoresistive element and the magnetic sensors (each resistance arm).

[0058] Figure 25A Shows the types and block configurations of magnetoresistive elements that exhibit (c) bipolar asymmetry and (3) monotonic increase characteristics.

[0059] Figure 25B ShowsFigure 25A The characteristics of the magnetoresistance change with respect to the amount of electricity conducted, exhibited by each block of the magnetoresistive element and the magnetic sensors (each resistance arm).

[0060] Figure 26A Shows the types and block configurations of magnetoresistive elements that exhibit (c) two-pole asymmetry and (3) monotonically increasing characteristics.

[0061] Figure 26B Shows Figure 26A The characteristics of the magnetoresistance change with respect to the amount of electricity conducted, exhibited by each block of the magnetoresistive element and the magnetic sensors (each resistance arm).

[0062] Figure 27A Shows the state of the lead frame forming process in the manufacturing process of the current sensor.

[0063] Figure 27B Shows the state of the magnetic sensor setting process in the manufacturing process of the current sensor.

[0064] Figure 27C Shows the state of the wire bonding process in the manufacturing process of the current sensor.

[0065] Figure 27D Shows the state of the molding process in the manufacturing process of the current sensor.

[0066] Figure 28 Shows the internal structure of the current sensor according to the modified example in a top view.

[0067] Reference numerals

[0068] 9... Package, 17... Device terminal, 17a... Terminal portion, 24... Conductor, 24a, 24e... Terminal portions (current terminals), 24b, 24d... Main portions, 24c... Bending portion, 24c 1 、24c 2 … Arm, 24c 3 … Connection portion, 44... Signal processing circuit, 51... Magnetoresistive element, 51o... Fixed layer, 51p... Tunnel layer, 51q... Free layer, 51r... Cover layer, 51s... Electrode bar, 52, 53... Electrode pieces, 60, 60h... Magnetic sensors, 61... Substrate, 62, 63... Magnetoelectric conversion portions, 62a~62d... Blocks, 62a 1 ~62a 4 、62b 1 ~62b 4 、62c 1 ~62c 4 、62d 1 ~62d 4 、63a 1 ~63a 4 、63b 1~63b 4 …sub-blocks, 63…magnetoelectric conversion unit, 110, 120…current sensors, L…reference line, GND…ground terminal, Np2, Np3, Np21, Np22, Np31, Np32…output terminals, R1~R8…resistance arms, VDD…drive terminal. Detailed implementation mode

[0069] Hereinafter, the present invention will be described by way of embodiments of the invention, but the following embodiments do not limit the invention related to the claims. In addition, not all combinations of the features described in the embodiments are necessarily required for the solution means of the invention.

[0070] In Figure 1A and Figure 1B respectively, the internal structure of the current sensor 110 according to the present embodiment is shown through the package 9 in a top view and a side view. Here, Figure 1B shows Figure 1A the cross-sectional structure of the current sensor 110 related to the reference line BB in Figure 1A Set the up-and-down direction in Figure 1A and Figure 1B the left-and-right direction in Figure 1B the up-and-down direction in

[0071] The package 9 is a member that seals and protects each structural part of the current sensor 110 (especially, the conductor 24 and the magnetic sensor 60) inside except for each terminal part of the plurality of device terminals 17 and the conductor 24. The package 9 is formed, for example, into a flat rectangular parallelepiped by molding using a sealing resin with excellent insulation such as epoxy.

[0072] The plurality of device terminals 17 (an example of a plurality of output terminals) are secondary conductors that are respectively connected to the electrode pads (not shown) of the magnetic sensor 60 and are used to output the detection result of the magnetic field intensity output from the magnetic sensor 60 to an external device. In this example, as an example, eight device terminals 17 are arranged at equal intervals on the left side of the package 9 with their long sides facing the Y-axis direction. The device terminals 17 are formed of metal into a rectangular plate shape, and their ends are bent downward by bending processing, and further their fronts are bent horizontally, whereby terminal parts 17a are respectively formed at their ends.

[0073] The conductor 24 is a primary conductor that forms a current path for the current to be measured to flow. In the present embodiment, the conductor 24 has a U-shaped or substantially U-shaped (or it may also be in the shape of the Japanese kana character "コ", the Greek letter "π", or the V shape) including two arms 24c Figure 2A that are symmetric or substantially symmetric with respect to a reference line L (refer to 1 , 24c 2 ). It is arranged in such a way that it passes through the inside of the package 9 from the current terminal 24a on one side (i.e., the upper side in Figure 1A ) on the right side of the package 9 and returns to the right side, reaching the current terminal 24e on the other side (i.e., the lower side in Figure 1A ) on the right side. The conductor 24 is formed using a conductive metal. The conductor 24 includes current terminals (also simply referred to as terminal portions) 24a, 24e, main trunk portions 24b, 24d, and a bent portion 24c.

[0074] The terminal portions 24a, 24e protrude from the right side of the package 9, and their ends are bent downward through bending processing, and the front ends are further bent horizontally, thereby forming terminals for inputting current.

[0075] The main trunk portions 24b, 24d are the parts that connect the terminal portions 24a, 24e and the bent portion 24c. As an example, the main trunk portions 24b, 24d are formed in a rectangular shape, and connect the two terminal portions 24a, 24e separately on the right side and connect the arms 24c 1 , 24c 2 of the bent portion 24c on the left side.

[0076] The bent portion 24c has two arms 24c 1 , 24c 2 and a connecting portion 24c 1 , 24c 2 that connects the two arms 24c 3 . The two arms 24c 1 , 24c 2 have a shape that expands in width in the X-axis direction and extends in the Y-axis direction. That is, the two arms 24c 1 , 24c 2 can extend to the same side with respect to the connecting portion 24c 3 . Their respective widths are smaller than the widths of the main trunk portions 24b, 24d. The connecting portion 24c 3 is bent into a substantially arc shape, and connects the two arms 24c 1 , 24c 2 at its two ends in a manner separated from each other in the X-axis direction. The connecting portion 24c 3 can also be bent into the shape of the Japanese kana character "コ". In the bent portion 24c, for the two arms 24c 1, 24c 2 The arm input of one of them measures the current to be measured and outputs the measured current from the arm of the other through the connection part 24c 3 .

[0077] The conductor 24 seals the two arms 24c included in the bent part 24c 1 , 24c 2 in the center of the package 9 with the terminal parts 24a and 24e protruding from the right side of the package 9

[0078] In Figure 2A , an example of the configuration and substrate layout of the full-bridge type magnetic sensor 60 is shown. The magnetic sensor 60 is a sensor that detects the magnetic field generated around the conductor 24 due to the current to be measured flowing through the conductor 24. The magnetic sensor 60 is configured as an example to detect the magnetic field in the X-axis direction (an example of the horizontal magnetic field) generated on the upper surface of the conductor 24, and includes a substrate 61, a plurality of magnetoresistive elements 51, and a plurality of electrode pads (not shown).

[0079] The substrate 61 is a plate-like member that supports two magnetoelectric conversion parts 62 and 63. In this example, it is provided on the conductor 24 so as to be bridged between the two arms 24c 1 , 24c 2 . The substrate 61 is formed of, for example, silicon (Si), and a plurality of blocks arranged in a direction (i.e., the X-axis direction) crossing the current-carrying direction of the conductor 24 are arranged on one surface thereof. In this example, the plurality of blocks include first blocks 62a and 63a that are located relative to each other near the center lines of the arms 24c 1 , 24c 2 of the conductor 24 (i.e., the parts where the magnetic field intensity is relatively large) and second blocks 62b and 63b that are located far from the arms 24c 1 , 24c 2 (i.e., the parts where the magnetic field intensity is relatively small. In this example, it is between the arms 24c 1 , 24c 2 ). One first block 62a, 63a and one second block 62b, 63b are symmetrically arranged on the two arms 24c 1 , 24c 2 or on each arm side with respect to the reference line L. It should be noted that the plurality of blocks are not limited to two and may include three or more blocks.

[0080] The first blocks 62a, 63a and the second blocks 62b, 63b each include one or more (in this example, four) sub-blocks 62a 1 ~62a 4 , 62b 1 ~62b 4 , 63a 1~63a 4 、63b 1 ~63b 4 Moreover, on one surface of the substrate 61, a plurality of wirings are laid that electrically connect a plurality of blocks 62a, 62b, 63a, 63b or a plurality of sub-blocks inside them, such as the plurality of sub-blocks 62a 1 ~62a 4 、62b 1 ~62b 4 、63a 1 ~63a 4 、63b 1 ~63b 4 electrically connected.

[0081] The plurality of magnetoresistive elements 51 are elements whose resistance values change due to the application of a magnetic field, and are respectively arranged on one side and the other side in the X-axis direction on the substrate 61 to form two magnetoelectric conversion units 62 and 63. The magnetoelectric conversion unit 62 is formed by forming a Wheatstone bridge shape or a half-bridge shape with a part of the plurality of magnetoresistive elements 51 (that is, the magnetoresistive elements 51 arranged on the right side in Figure 2A ). Here, a further part of a part of the magnetoresistive elements 51 is arranged in the first block 62a, and the other part is arranged in the second block 62b. The magnetoelectric conversion unit 63 is formed by forming a Wheatstone bridge shape (or a half-bridge shape) with the other part of the plurality of magnetoresistive elements 51 (that is, the magnetoresistive elements 51 arranged on the left side in Figure 2A ). Here, a further part of the other part of the magnetoresistive elements 51 is arranged in the first block 63a, and the other part is arranged in the second block 63b. It should be noted that, as the magnetoresistive element, for example, a tunneling magnetoresistive element (TMR) or a giant magnetoresistive element (GMR) can be used.

[0082] In Figure 2BIn [the figure], the structure of the magnetoresistive element 51 is shown in a side view. The magnetoresistive element 51 is an element whose resistance value varies due to the application of a magnetic field, and includes a fixed layer 51o, a tunnel layer 51p, a free layer 51q, and a capping layer 51r. The fixed layer 51o is a magnetic film with a fixed magnetization direction. The fixed layer 51o is magnetized in such a way that its magnetization direction is along an axial direction within the plane (also referred to as the magnetic sensitive plane) in which the magnetization of the magnetic film extends or in a direction perpendicular to the magnetic sensitive plane. The magnetization direction of the fixed layer 51o determines the magnetic field detection direction of the magnetoresistive element 51. The tunnel layer 51p is a nonmagnetic insulating film with a thickness of, for example, several nanometers. The free layer 51q is a magnetic film whose magnetization direction is changed by an external magnetic field. It should be noted that, as the material of the magnetic film, for example, an alloy containing at least one of Co, Fe, B, Ni, and Si can be used. More specifically, cobalt iron (CoFe), cobalt iron boron (CoFeB), and nickel iron (NiFe) can be used. The fixed layer 51o, the tunnel layer 51p, and the free layer 51q are stacked to form a stack. Here, electrons tunnel through the tunnel layer 51p and move from the fixed layer 51o to the free layer 51q or from the free layer 51q to the fixed layer 51o, and current flows in the element in the stacking direction. The capping layer 51r is a member that covers the stack from above. For example, an alloy containing at least one of Ta, Ru, Pt, Mn, Ir, Mg, Cu, Fe, Ni, Cr, Fe, Co, and Al can be used. More specifically, platinum manganese (PtMn) and iridium manganese (IrMn) can be used. It should be noted that the periphery of the magnetoresistive element 51 is covered by an insulator (not shown), such as silicon dioxide (SiO 2 ), silicon nitride (SiN), etc.

[0083] When an external magnetic field is applied to the magnetoresistive element 51, due to the magnetoresistive effect (MR effect), the magnetization direction of the free layer 51q changes according to the orientation and intensity of the magnetic field. That is, the magnetization direction of the free layer 51q changes with respect to the magnetization direction of the fixed layer 51o. As a result, the resistance value (also referred to as magnetoresistance) between the fixed layer 51o and the free layer 51q varies. In particular, when the magnetization direction of the free layer 51q is the same as the magnetization direction of the fixed layer 51o (the magnetizations of the two layers are parallel), the resistance value is small, and when they are opposite (the magnetizations of the two layers are antiparallel), the resistance value becomes large.

[0084] Note that by connecting a plurality of magnetoresistive elements 51 in series, the DC withstand voltage can be improved. Here, by connecting the electrode piece 52 via the electrode bar 51s to the cover layer 51r and connecting the electrode piece 53 to the lower surface of the fixed layer 51o, the magnetoresistive element 51 can be connected to another magnetoresistive element 51 via these electrode pieces 52 and 53. That is, a plurality of magnetoresistive elements 51 can be arranged in a plane. In addition, by connecting the cover layer 51r of the magnetoresistive element 51 to the fixed layer 51o of another magnetoresistive element 51 via the electrode bar 51s, a plurality of magnetoresistive elements 51 can be arranged three-dimensionally. In this example, in particular, for a plurality of sub-blocks 62a 1 ~62a 4 、62b 1 ~62b 4 、63a 1 ~63a 4 、63b 1 ~63b 4 in each of them, a plurality of magnetoresistive elements 51 disposed in each sub-block are connected in series using the electrode pieces 52 and 53 to form a part of a resistance arm.

[0085] In Figure 3 shows the circuit structure of the full-bridge type magnetic sensor 60 (two magnetoelectric conversion units 62, 63) and the magnetic field detection directions (also called magnetosensitive directions) of the resistance arms R1 to R8 (each including the magnetoresistive element 51). The two magnetoelectric conversion units 62 and 63 are connected in parallel between the drive terminal VDD and the ground terminal GND in the magnetic sensor 60. As described above, the first blocks 62a, 63a and the second blocks 62b, 63b disposed on the substrate 61 each include 4 sub-blocks 62a 1 ~62a 4 、62b 1 ~62b 4 、63a 1 ~63a 4 、63b 1 ~63b 4 .

[0086] In the magnetoelectric conversion unit 62 (similarly in the magnetoelectric conversion unit 63), in the first sub-blocks 62a 1 、62b 1 (63a 1 、63b 1 ) included in the first block 62a (63a) and the second block 62b (63b) respectively, magnetoresistive elements 51 having the same magnetosensitive direction as each other as shown by the blackened arrows (hollow arrows) are disposed. The magnetoresistive elements 51 in the first sub-block 62a 1 (63a 1 ) in the first block 62a (63a) and the first sub-block 62b 1(63b 1 The magnetoresistive elements 51 within are connected in series to form the resistance arms R1 (R5).

[0087] In the second sub-blocks 62a 2 and 62b 2 (63a 2 and 63b 2 ) included in the first block 62a (63a) and the second block 62b (63b) respectively, there are arranged magnetoresistive elements 51 having the same magnetosensitive direction as each other as shown by the hollow arrow (blackened arrow) and having magnetoresistive elements 51 with opposite magnetosensitive directions with respect to the first sub-block 62a 1 and 62b 1 (63a 1 and 63b 1 ). The magnetoresistive elements 51 in the second sub-block 62a 2 (63a 2 ) of the first block 62a and the magnetoresistive elements 51 in the second sub-block 62b 2 (63b 2 ) of the second block 62b are connected in series to form the resistance arms R2 (R6).

[0088] In the third sub-blocks 62a 3 and 62b 3 (63a 3 and 63b 3 ) included in the first block 62a (63a) and the second block 62b (63b) respectively, there are arranged magnetoresistive elements 51 having the same magnetosensitive direction as each other as shown by the blackened arrow (hollow arrow) and having the same magnetosensitive direction as the magnetoresistive elements 51 in the first sub-block 62a 1 and 62b 1 (63a 1 and 63b 1 ). The magnetoresistive elements 51 in the third sub-block 62a 3 (63a 3 ) of the first block 62a and the magnetoresistive elements 51 in the third sub-block 62b 3 (63b 3 ) of the second block 62b are connected in series to form the resistance arms R3 (R7).

[0089] In the fourth sub-blocks 62a 4 and 62b 4 (63a 4 and 63b 4 ) included in the first block 62a (63a) and the second block 62b (63b) respectively, there are arranged magnetoresistive elements 51 having the same magnetosensitive direction as each other as shown by the hollow arrow (blackened arrow) and having the same magnetosensitive direction as the magnetoresistive elements 51 in the first sub-block 62a1 、62b 1 (63a 1 、63b 1 ) has an opposite magnetic sensitivity direction, that is, has a magnetic resistance element 51 with respect to the second sub-block 62a. 2 、62b 2 (63a 2 、63b 2 The fourth sub-block 62a of the first block 62a (63a) has the same magnetic sensitivity direction as the magnetoresistive element 51 in the magnetoresistive element 51. 4 (63a 4 ) and the fourth sub-block 62b of the second block 62b (63b) 4 (63b 4 ) are connected in series to form a resistance arm R4 (R8).

[0090] The resistance arms R1 and R2 (R5 and R6) are connected in series to form an output terminal Np21 (Np31) therebetween, and the resistance arms R3 and R4 (R7 and R8) are connected in series to form an output terminal Np22 (Np32) therebetween and are connected in parallel with respect to the resistance arms R1 and R2 (R5 and R6), and the resistance arms R1 to R4 (R5 to R8) form a Wheatstone bridge circuit.

[0091] It should be noted that in the current sensor 110 according to the present embodiment, the magnetic sensitive direction of the resistor arms R1 to R4 (R5 to R8) is set to be parallel to the upper surface of the conductor 24 in one axial direction ( Figure 1A The magnetic sensitivity directions of the magnetoresistive elements 51 forming the resistance arms R1, R3 (R6, R8) are equal to each other (in the X-axis direction). Figure 3 In this example, Figure 1A The magnetic sensitivity directions of the magnetoresistive elements 51 forming the resistor arms R2, R4 (R5, R7) are also equal to each other (in Figure 3 In this example, Figure 1A The magnetic field detection direction of the resistor arms R1 and R3 (R6 and R8) is opposite to the magnetic sensitivity direction of the resistor arms R2 and R4 (R5 and R7).

[0092] At least a portion of the magnetoelectric converter 62 (63) is disposed on the arm 24c of the conductor 24. 1 (24c 2 If the current to be measured flows into the conductor 24 and a magnetic field is generated around the conductor 24, the arm 24c disposed on the conductor 24 will be magnetically connected to the conductor 24. 1 (24c 2)A magnetic field in the X-axis direction is applied to the magnetoresistive elements 51 included in the resistance arms R1 to R4 (R5 to R8) of the magnetoelectric conversion units 62 (63), and the respective resistance values (also referred to as magnetoresistance) change. For example, the resistance values of the resistance arms R1 and R3 (R5 and R7) increase (or decrease), and the resistance values of the resistance arms R2 and R4 (R6 and R8) decrease (or increase), thereby losing the resistance balance of the resistance arms R1 to R4 (R5 to R8). Here, by inputting a drive voltage to the drive terminal VDD with respect to the ground terminal GND and detecting the differential voltage output between the output terminals Np21 and Np22 (Np31 and Np32), the magnetic field intensity can be detected. Thus, it is possible to detect the horizontal magnetic field generated on the upper surface of the arm 24c 1 (24c 2 ).

[0093] When the current to be measured flows through the conductor 24 and a magnetic field Bx parallel to the X-axis direction is generated above the conductor 24 (arm 24c 1 、24c 2 ), the magnetoresistive elements 51 included in the magnetoelectric conversion units 62 and 63 linearly change the magnetoresistance according to the intensity of the applied magnetic field Bx, and when the intensity of the magnetic field Bx reaches the detection limit, magnetic saturation occurs (i.e., the magnetoresistance becomes constant). Here, when the plurality of magnetoresistive elements 51 are formed in the same manner respectively, they will exhibit the same magnetic sensing characteristics. However, the intensity of the magnetic field Bx increases or decreases according to the relative position with respect to the conductor 24 (arm 24c 1 、24c 2 ). For example, it is maximum at the respective center lines or approximate center lines of the arms 24c 1 、24c 2 and attenuates in the region between the arms 24c 1 、24c 2 or the outer region. Therefore, by arranging the plurality of magnetoresistive elements 51 constituting the magnetoelectric conversion units 62 and 63 at different positions with respect to the conductor 24 (arm 24c 1 、24c 2 ), it is possible to realize a multi-linear sensor having a plurality of linearities with different sensitivities.

[0094] In Figure 4 , the magnetoresistance change ΔR of the magnetoresistive elements 51 and the entire sensor (magnetoelectric conversion unit 62) in the first block 62a and the second block 62b with respect to the current amount Iin in the conductor 24 is shown. It should be noted that the output voltage Vout of the magnetic sensor 60 (magnetoelectric conversion units 62 and 63) is proportional to the magnetoresistance change ΔR. Therefore, the linearity of the output voltage Vout with respect to the current amount Iin is equal to the linearity of the magnetoresistance change ΔR. Therefore, as long as not specifically stated, it is about the linearity of the magnetoresistance change ΔR.

[0095] Since the first block 62a is located on the substrate 61 at the center line of the arm 24c 1 or near it (position x 1 ), the magnetoresistive element 51 disposed therein increases the magnetoresistance ΔR with respect to the current amount Iin with strong sensitivity due to the application of a magnetic field Bx having substantially the maximum intensity, 62a and magnetically saturates (ΔR s ) at a current amount Iina or more. Note that the sensitivity varies according to the position x 1 of the first block 62a. On the other hand, since the second block 62b is located far from the arm 24c 1 (in this example, at the position x 1 between two arms 24c 2 and 24c 2 ), the magnetoresistive element 51 disposed therein increases the magnetoresistance ΔR with respect to the current amount Iin with weak sensitivity due to the application of a relatively weak magnetic field Bx, 62b and magnetically saturates (ΔR s ) at a current amount Iinb or more. Note that the sensitivity varies according to the position x 2 of the second block 62b.

[0096] By connecting in series the magnetoresistive elements 51 in the first block 62a (sub-blocks 62a 1 to 62a 4 ) and the magnetoresistive elements 51 in the second block 62b (sub-blocks 62b 1 to 62b 4 ), resistance arms R1 to R4 are formed. The magnetoresistance change ΔR of each of the resistance arms R1 to R4 shows the following double linearity with respect to the measured current Iin: increasing with strong sensitivity (i.e., a large slope) in the range below the current amount Iina, increasing with weak sensitivity (a small slope) in the range of the current amount Iina to Iinb, and magnetically saturating in the range above the current amount Iinb. Here, the magnetoresistive elements 51 in the first block 62a and the magnetoresistive elements 51 in the second block 62b can have the same structure and can be formed by the same process. In addition, since an amplifier for realizing multiple linearities is not required, the magnetic sensor 60 can be configured with a small chip area.

[0097] Note that since the structures and processes of the multiple magnetoresistive elements 51 are the same, the magnetoresistance change ΔR of the magnetoresistive elements 51 and the magnetoelectric conversion unit 63 in the first block 63a and the second block 63b with respect to the amount of current passing through the conductor 24 is the same as the magnetoresistance change ΔR of the magnetoresistive elements 51 and the magnetoelectric conversion unit 62 in the first block 62a and the second block 62b.

[0098] Note that the two magnetoelectric conversion units 62 and 63 can be relative to the reference line L (seeFigure 2A ) They are symmetrically arranged on one side and the other side in the X-axis direction respectively. Thus, the interference magnetic field can be cancelled. In addition, the drive terminals VDD, ground terminals GND, and output terminals Np21, Np22, Np31, Np32 of the two magnetoelectric conversion units 62 and 63 can also be connected to a plurality of electrode pads on the substrate 61.

[0099] The plurality of electrode pads are the following pads: arranged on the substrate 61, wire-connected to the drive terminals VDD and ground terminals GND of the two magnetoelectric conversion units 62 and 63, the two output terminals Np21 and Np22 of the magnetoelectric conversion unit 62, and the two output terminals Np31 and Np32 of the magnetoelectric conversion unit 63, for inputting a drive voltage to the drive terminal VDD from the outside and outputting a differential voltage to the outside from the output terminals Np21, Np22, Np31, Np32. The electrode pads are formed on the substrate 61 using a conductive metal such as gold, copper, or aluminum, and are arranged in the X-axis direction on the +Y side ( Figure 1A the left side) for example.

[0100] The magnetic sensor 60 is arranged on the bent portion 24c of the conductor 24. Thus, the two magnetoelectric conversion units 62 and 63 are respectively arranged on the two arms 24c 1 、24c 2 of the bent portion 24c, and a plurality of electrode pads on the substrate 61 connected to their drive terminals VDD, ground terminals GND, and output terminals Np21, Np22, Np31, Np32 are connected to the device terminals 17 by wire bonding. Thus, a drive voltage can be applied to the two magnetoelectric conversion units 62 and 63 via the device terminals 17 and their respective differential voltages can be output.

[0101] In Figure 5A an example of the configuration and substrate layout of the half-bridge type magnetic sensor 60h is shown. The magnetic sensor 60h can be configured in the same way as the magnetic sensor 60. However, the first blocks 62a, 63a and the second blocks 62b, 63b arranged on one surface of the substrate 61 each include two sub-blocks 62a 1 、62a 2 、62b 1 、62b 2 、63a 1 、63a 2 、63b 1 、63b 2 . Moreover, on one surface of the substrate 61, a plurality of blocks 62a, 62b, 63a, 63b or a plurality of sub-blocks 62a inside them 1 、62a 2 、62b 1 、62b 2 、63a 1, 63a 2 , 63b 1 , 63b 2 A plurality of wirings that are electrically connected.

[0102] In Figure 5B shows the circuit structure of the half-bridge type magnetic sensor (two magnetoelectric conversion units 62, 63) and the magnetic sensitive directions of the resistance arms R1, R2, R5, R6 (each including a magnetoresistive element 51). The two magnetoelectric conversion units 62, 63 are connected in parallel between the drive terminal VDD and the ground terminal GND in the magnetic sensor 60. As described above, the first blocks 62a, 63a and the second blocks 62b, 63b disposed on the substrate 61 each include two sub-blocks 62a 1 , 62a 2 , 62b 1 , 62b 2 , 63a 1 , 63a 2 , 63b 1 , 63b 2 .

[0103] In the magnetoelectric conversion unit 62 (similarly in the magnetoelectric conversion unit 63), in the first sub-blocks 62a 1 , 62b 1 (63a 1 , 63b 1 ) included in the first block 62a (63a) and the second block 62b (63b), magnetoresistive elements 51 having the same magnetic sensitive direction as shown by the blackened arrow (hollow arrow) are arranged. The magnetoresistive elements 51 in the first sub-block 62a 1 (63a 1 ) of the first block 62a and the magnetoresistive elements 51 in the first sub-block 62b 1 (63b 1 ) of the second block 62b are connected in series to form the resistance arm R1 (R5).

[0104] In the second sub-blocks 62a 2 , 62b 2 (63a 2 , 63b 2 ) included in the first block 62a (63a) and the second block 62b (63b), magnetoresistive elements 51 having the same magnetic sensitive direction as shown by the hollow arrow (blackened arrow) and having a magnetic sensitive direction opposite to that of the magnetoresistive elements 51 in the first sub-blocks 62a 1 , 62b 1 (63a 1 , 63b 1 ) are arranged. The second sub-block 62a 2(63a 2 ) The magnetoresistive element 51 within and the second sub-block 62b of the second block 62b (63b) 2 (63b 2 ) The magnetoresistive elements 51 within are connected in series to form a resistance arm R2 (R6).

[0105] The resistance arms R1, R2 (R5, R6) are connected in series with each other to form an output terminal Np2 (Np3) therebetween, and a half-bridge circuit is formed by the resistance arms R1, R2 (R5, R6).

[0106] It should be noted that in the magnetic sensor 60h involved in this example, the magnetosensitive directions of the resistance arms R1, R2 (R5, R6) are set to an axial direction parallel to the upper surface of the conductor 24 ( Figure 1A the X-axis direction in Figure 5B ). The magnetosensitive directions of the magnetoresistive elements 51 forming the resistance arm R1 (R6) are equal to each other (shown by solid black arrows in Figure 1A ), and are set to the +X direction (or -X direction) in this example. The magnetosensitive directions of the magnetoresistive elements 51 respectively forming the resistance arm R2 (R5) are also equal to each other (shown by hollow arrows in Figure 5B ), and are set to the -X direction (or +X direction) in this example. The magnetic field detection direction of the resistance arm R1 (R6) is opposite to the magnetosensitive direction of the resistance arm R2 (R5). Figure 1A ).

[0107] At least a part of the magnetoelectric conversion unit 62 (63) is disposed on the arm 24c of the conductor 24 1 (24c 2 ). If a measured current flows through the conductor 24 to generate a magnetic field around the conductor 24, a magnetic field in the X-axis direction is applied to the magnetoresistive elements 51 included in the resistance arms R1, R2 (R5, R6) of the magnetoelectric conversion unit 62 (63) disposed on the arm 24c 1 (24c 2 ), and their respective resistance values change. For example, the resistance value of the resistance arm R1 (R5) increases (or decreases), and the resistance value of the resistance arm R2 (R6) decreases (or increases), thereby losing the resistance balance of the resistance arms R1, R2 (R5, R6). Here, by inputting a drive voltage to the drive terminal VDD with respect to the ground terminal GND and detecting the voltage output from the output terminal Np2 (Np3), the magnetic field intensity can be detected. Thus, the horizontal magnetic field generated on the upper surface of the arm 24c 1 (24c 2 ) can be detected.

[0108] In the magnetic sensor 60h, similar to the magnetic sensor 60, by disposing a plurality of magnetoresistive elements 51 constituting the magnetoelectric conversion units 62, 63 with respect to the conductor 24 (arm 24c1 , 24c 2 ) Arranged in different positions, it can realize a multi-linear sensor with multiple linearities having different sensitivities.

[0109] By selecting the position x of the first block 62a (63a) 1 and the position x of the second block 62b (63b) 2 , the sensitivity (linearity) of the magnetoresistive element 51 in each block with respect to the measured current Iin can be adjusted. It is possible to increase the sensitivity by approaching the vicinity of the center line of the arm 24c 1 , 24c 2 where the maximum-intensity magnetic field Bx is generated, and decrease the sensitivity by arranging it in the region near the outer edge of the arm 24c 1 , 24c 2 or in the inner or outer region of 24c 1 , 24c 2 where the magnetic field Bx becomes relatively weak.

[0110] In Figures 6A - 6D , examples of the arrangements of the first blocks 62a, 63a and the second blocks 62b, 63b are shown. In any of the examples, the first blocks 62a, 63a of the magnetoelectric conversion units 62, 63 are arranged symmetrically with respect to the reference line L, and the second blocks 62b, 63b of the magnetoelectric conversion units 62, 63 are also arranged symmetrically with respect to the reference line L.

[0111] In Figure 6A the example shown, in a top view (i.e., observed in the Z-axis direction), at least a part of the first blocks 62a, 63a are respectively located on the arms 24c 1 , 24c 2 of the conductor 24, and the second blocks 62b, 63b are located outside the arms 24c 1 , 24c 2 . In this example, in particular, the first blocks 62a, 63a are respectively located on the center lines of the arms 24c 1 , 24c 2 , and the second blocks 62b, 63b are located between the arms 24c 1 , 24c 2 . It should be noted that, as shown by the dashed lines in the figure, the first blocks 62a, 63a may also be respectively located on the inner or outer edges of the arms 24c 1 , 24c 2 . With this arrangement, the magnetoresistive element 51 can be arranged within a small chip area.

[0112] In Figure 6B the example shown, in a top view, the first blocks 62a, 63a are respectively located on the arms 24c 1 , 24c 2above, at least a part of the second blocks 62b and 63b are respectively located on the arms 24c 1 , 24c 2 and at least a part of them are respectively located outside the arms 24c 1 , 24c 2 In this example, in particular, the first blocks 62a and 63a are respectively located on or near the center lines of the arms 24c 1 , 24c 2 , and a part of the second blocks 62b and 63b are respectively located on the inner sides of the arms 24c 1 , 24c 2 . With this configuration, the magnetoresistive element 51 can be arranged within a small chip area.

[0113] In Figure 6C the example shown, in a top view, the first blocks 62a and 63a are respectively located on the arms 24c 1 , 24c 2 of the conductor 24, and at least a part of the second blocks 62b and 63b are respectively located on the arms 24c 1 , 24c 2 and at least a part of them are respectively located outside the arms 24c 1 , 24c 2 In this example, in particular, the first blocks 62a and 63a are respectively located on or near the center lines of the arms 24c 1 , 24c 2 , and a part of the second blocks 62b and 63b are respectively located on the outer sides of the arms 24c 1 , 24c 2 .

[0114] In Figure 6D the example shown, in a top view, at least a part of the first blocks 62a and 63a are respectively located on the arms 24c 1 , 24c 2 of the conductor 24, and the second blocks 62b and 63b are located outside the arms 24c 1 , 24c 2 In this example, in particular, the first blocks 62a and 63a are respectively located on the center lines of the arms 24c 1 , 24c 2 , and the second blocks 62b and 63b are located outside the arms 24c 1 , 24c 2 . It should be noted that, as shown by the dashed lines in the figure, the first blocks 62a and 63a can also be respectively located on the inner or outer sides of the arms 24c 1 , 24c 2 .

[0115] The plurality of blocks may also include at least one extension block, which is disposed at a position on one surface of the substrate 61 separately from the first blocks 62a, 63a and the second blocks 62b, 63b. In this case, another part of the plurality of magnetoresistive elements 51 is disposed within the at least one extension block.

[0116] In Figure 7A shows the block configuration of the magnetoresistive element 51 that uses the full-bridge type magnetic sensor 60 to form the four-linearity type current sensor 110 whose sensitivity decreases as the energization amount increases. In the magnetic sensor 60 of this example, the plurality of blocks disposed on the substrate 61 (omitted in Figure 7A ) include, in addition to the first blocks 62a and second blocks 62b shown in Figure 2A , two extension blocks, namely the third block 62c and the fourth block 62d. However, the four blocks that respectively form the magnetoelectric conversion units 62, 63 are symmetrically disposed with respect to the reference line L. Therefore, only the four blocks 62a to 62d in the magnetoelectric conversion unit 62 are illustrated, and the four blocks in the magnetoelectric conversion unit 63 are omitted.

[0117] The third block 62c and the fourth block 62d each include one or more (four in this example) sub-blocks 62c 1 ~62c 4 、62d 1 ~62d 4 in the same manner as the first block 62a and the second block 62b. Moreover, on one surface of the substrate 61, a plurality of wirings (not shown) that electrically connect the plurality of blocks 62a, 62b, 62c, 62d or the plurality of sub-blocks 62a 1 ~62a 4 、62b 1 ~62b 4 、62c 1 ~62c 4 、62d 1 ~62d 4 are laid. Similar to the magnetoelectric conversion unit 62, the plurality of blocks in the magnetoelectric conversion unit 63 also include four sub-blocks each, and a plurality of wirings for electrically connecting them are provided.

[0118] For each of the plurality of magnetoresistive elements 51 with respect to the plurality of sub-blocks 62a 1 ~62a 4 、62b 1 ~62b 4 、62c 1 ~62c 4 、62d 1 ~62d 4 , they are connected in series using the electrode pieces 52, 53 to form a part of the resistance arms R1 to R4.

[0119] In the magnetoelectric converter 62, the first block 62a and the second block 62b each include a first sub-block 62a 1 、62b 1 The magnetoresistive elements 51 having the same magnetic sensitivity direction are arranged in the third block 62c and the fourth block 62d. 1 , 62d 1 The first sub-block 62a is also provided with the same magnetic sensitive direction as the first block 62a. 1 The magnetoresistive element 51 in the second block 62b and the first sub-block 62b of the second block 62b 1 The magnetoresistive elements 51 in the third block 62c have the same magnetoresistive direction. 1 The magnetoresistive element 51 in the fourth block 62d and the first sub-block 62d 1 The magnetoresistive element 51 in the first block 62a is connected to the first sub-block 62a of the first block 62a. 1 The magnetoresistive element 51 in the second block 62b and the first sub-block 62b of the second block 62b 1 The magnetoresistive elements 51 in the resistor are connected in series to form a resistor arm R1.

[0120] The first to fourth blocks 62a to 62d include the second sub-blocks 62a, 2 ~62d 2 The first sub-blocks 62a are provided with the same magnetic sensitivity direction as each other and with respect to the respective first sub-blocks 62a. 1 ~62d 1 The magnetoresistive elements 51 in the first to fourth blocks 62a to 62d have opposite magnetoresistive directions. 2 ~62d 2 The magnetoresistive elements 51 in the resistor are connected in series to form a resistor arm R2.

[0121] The third sub-block 62a included in the first to fourth blocks 62a to 62d respectively 3 ~62d 3 The first sub-blocks 62a are provided with the same magnetic sensitivity direction as each other and with respect to the respective first sub-blocks 62a. 1 ~62d 1 The magnetoresistive elements 51 in the first to fourth blocks 62a to 62d have the same magnetoresistive direction. 3 ~62d 3 The magnetoresistive elements 51 in the resistor are connected in series to form a resistor arm R3.

[0122] The fourth sub-block 62a included in the first to fourth blocks 62a to 62d respectively 4 ~62d 4It is also configured with magnetoresistive elements 51 having the same magnetosensitive direction as each other and opposite magnetosensitive directions with respect to the respective first sub-blocks 62a 1 ~62d 1 The magnetoresistive elements 51 within the first to fourth blocks 62a to 62d have opposite magnetosensitive directions. The magnetoresistive elements 51 within the fourth sub-blocks 62a 4 ~62d 4 of the first to fourth blocks 62a to 62d are connected in series to form a resistance arm R4.

[0123] The resistance arms R1 and R2 are connected in series to form an output terminal Np21 therebetween, and the resistance arms R3 and R4 are connected in series with each other to form an output terminal Np22 therebetween and are connected in parallel with respect to the resistance arms R1 and R2, and a Wheatstone bridge circuit is formed by the resistance arms R1 to R4 (refer to Figure 3 ). That is, in the magnetic sensor 60 of this example used in the quadruple linear current sensor 110, each of the blocks 62a to 62d includes 4 sub-blocks 62a 1 ~62a 4 , 62b 1 ~62b 4 , 62c 1 ~62c 4 , 62d 1 ~62d 4 in which the magnetoresistive elements 51 are respectively arranged.

[0124] In Figure 7B is shown the block configuration of the magnetoresistive elements 51 that form a quadruple linear current sensor 110 with a sensitivity that decreases as the energization amount increases using a half-bridge type magnetic sensor 60h. In the magnetic sensor 60h of this example, in addition to the first block 62a and the second block 62b shown in Figure 7B (omitted in Figure 5A ), the multiple blocks arranged on the substrate 61 also include 2 extension blocks, namely the third block 62c and the fourth block 62d. However, the 4 blocks in which the magnetoresistive elements 51 that respectively form the magnetoelectric conversion units 62 and 63 are arranged are symmetrically arranged with respect to the reference line L. Therefore, only the 4 blocks 62a to 62d in the magnetoelectric conversion unit 62 are illustrated, and the 4 blocks in the magnetoelectric conversion unit 63 are omitted.

[0125] The third block 62c and the fourth block 62d respectively include 2 sub-blocks 62c 1 , 62c 2 , 62d 1 , 62d 2 similarly to the first block 62a and the second block 62b. Moreover, on one surface of the substrate 61, a plurality of blocks 62a, 62b, 62c, 62d or a plurality of sub-blocks 62a 1 , 62a 2 , 62b 1, 62b 2 , 62c 1 , 62c 2 , 62d 1 , 62d 2 A plurality of wirings (not shown) that are electrically connected. Similar to the magnetoelectric conversion unit 62, the plurality of blocks in the magnetoelectric conversion unit 63 also each include two sub-blocks, and a plurality of wirings for electrically connecting them are provided.

[0126] A plurality of magnetoresistive elements 51 are provided for each of the plurality of sub-blocks 62a 1 , 62a 2 , 62b 1 , 62b 2 , 62c 1 , 62c 2 , 62d 1 , 62d 2 among them, are connected in series using electrode plates 52 and 53 to form a part of resistance arms R1 to R4, and a Wheatstone bridge circuit is formed by these resistance arms R1 to R4 (refer to Figure 3 ).

[0127] In the magnetoelectric conversion unit 62, magnetoresistive elements 51 having the same magnetic sensitivity direction are arranged in the first sub-blocks 62a 1 , 62b 1 respectively included in the first block 62a and the second block 62b. Magnetoresistive elements 51 having the same magnetic sensitivity direction and having the same magnetic sensitivity direction as the magnetoresistive elements 51 in the first sub-block 62a of the first block 62a 1 , 62d 1 are also arranged in the first sub-blocks 62c 1 and 62d 1 respectively included in the third block 62c and the fourth block 62d. The magnetoresistive elements 51 in the first sub-block 62c of the third block 62c 1 and the magnetoresistive elements 51 in the first sub-block 62d of the fourth block 62d 1 are connected in series with the magnetoresistive elements 51 in the first sub-block 62a of the first block 62a 1 and the magnetoresistive elements 51 in the first sub-block 62b of the second block 62b 1 to form resistance arm R1.

[0128] The second sub-blocks 62a 2 to 62d 2 respectively included in the first to fourth blocks 62a to 62d are also arranged with magnetoresistive elements having the same magnetic sensitivity direction and relative to each of the first sub-blocks 62a 1 to 62d 1The magnetoresistive elements 51 within have magnetoresistive elements 51 with opposite magnetosensitive directions. The second sub-blocks 62a of the first to fourth blocks 62a to 62d 2 to 62d 2 The magnetoresistive elements 51 within are connected in series to form a resistance arm R2.

[0129] The resistance arms R1 and R2 are connected in series with each other to form an output terminal Np2 therebetween, and a half-bridge circuit shape is formed by the resistance arms R1 and R2 (refer to Figure 5B ). That is, in the present example, the magnetic sensor 60h used in the quadruple linear current sensor 110 includes two sub-blocks 62a in each of the blocks 62a to 62d where the magnetoresistive elements 51 are respectively arranged 1 to 62a 2 、62b 1 to 62b 2 、62c 1 to 62c 2 、62d 1 to 62d 2 .

[0130] In Figure 7C is shown the magnetoresistance change ΔR of the magnetoresistive elements 51 of the four blocks 62a to 62d of the magnetic sensor 60 and Figure 7A of the magnetic sensor 60h and Figure 7B of the resistance arms R1 to R4 or R1 and R2 with respect to the amount of current passing through the conductor 24. The four blocks 62a to 62d are arranged in the X-axis direction on the upper surface of the substrate 61 in sequence from the vicinity of the center line of the arm 24c 1 to the +X side of the reference axis L. Thus, the magnetoresistive elements 51 included in the first block 62a (sub-block 62a 1 to 62a 4 or 62a 1 to 62a 2 ) are applied with the magnetic field Bx of the maximum intensity generated by the measured current passing through the conductor 24, exhibit the maximum sensitivity with respect to the current amount Iin, and magnetically saturate at a magnetic resistance ΔR 62a above a small current amount Iina. The magnetoresistive elements 51 included in the second block 62b (sub-block 62b 1 to 62b 4 or 62b 1 to 62b 2 ) are applied with a relatively large intensity magnetic field Bx generated by the measured current, exhibit a relatively large sensitivity subsequently with respect to the current amount Iin (smaller than the magnetic resistance ΔR 62a ) and magnetically saturate at a magnetic resistance ΔR 62b above a small current amount Iinb (>Iina). The third block 62c (sub-block 62c 1 to 62c 4or 62c 1 ~62c 2 ) The magnetoresistive element 51 included therein is applied with a relatively weak magnetic field Bx generated by the measured current, and exhibits a relatively large sensitivity with respect to the current amount Iin (larger than the magnetoresistance ΔR 62b small) and magnetically saturates above a small current amount Iinc (> Iinb) of the magnetoresistance ΔR 62c . The fourth block 62d (sub-block 62d 1 ~62d 4 or 62d 1 ~62d 2 ) The magnetoresistive element 51 included therein is applied with the minimum magnetic field Bx generated by the measured current, and exhibits the minimum sensitivity with respect to the current amount Iin (smaller than the magnetoresistance ΔR 62c small) and magnetically saturates above the maximum current amount Iind (> Iinc) of the magnetoresistance ΔR 62d .

[0131] The magnetoresistance change ΔR(total) of each of the resistance arms R1 to R4 or R1, R2 is given by the linear sum of the magnetoresistances ΔR 62a , ΔR 62b , ΔR 62c , ΔR 62d of the magnetoresistive elements 51 in the four blocks 62a to 62d. Therefore, the magnetoresistance change ΔR exhibits the following quadruple linearity with respect to the measured current Iin: it increases with the strongest sensitivity (i.e., the largest slope) in the range of the current amount 0 to Iina, increases with the second-strongest sensitivity (the second-largest slope) in the range of the current amount Iina to Iinb, increases with a weak sensitivity (a small slope) in the range of the current amount Iinb to Iinc, increases with the weakest sensitivity (the smallest slope) in the range of the current amount Iinc to Iind, and magnetically saturates above the current amount Iind.

[0132] Here, the four sensitivities in the quadruple linearity can be adjusted by the positions related to the X-axis direction of the four blocks 62a to 62d on the substrate 61. In addition, the magnetoresistive elements 51 in the first to fourth blocks 62a to 62d can have the same structure and can be formed by the same process. In addition, since an amplifier for realizing multiple linearities is not required, the magnetic sensors 60, 60h can be formed with a small chip area.

[0133] At least one of the plurality of magnetoresistive elements 51 may have a free layer 51q to which a bias magnetic field is applied. Here, the bias magnetic field can be applied by magnetic coupling of an antiferromagnet to the free layer 51q, magnetic coupling of a stacked ferrimagnetic structure (SyF (Synthetic Ferrimagnetic Structure), that is, a structure in which the magnetizations of two ferromagnets are anti-parallelly coupled via a nonmagnetic intermediate layer), arrangement of a magnet near the free layer 51q, or arrangement of an energized coil wiring near the free layer 51q. Thus, if an external magnetic field opposite to the direction of the bias magnetic field applied to the free layer 51q is applied to the magnetoresistive element 51, when the intensity of the external magnetic field is smaller than that of the bias magnetic field, the magnetoresistance ΔR of the magnetoresistive element 51 remains unchanged because the exchange bias works and the direction of magnetization of the free layer 51q is fixed. When the intensity of the external magnetic field is larger than that of the bias magnetic field, the direction of magnetization of the free layer 51q changes and linearly varies because the external magnetic field cancels the effect of the exchange bias, and magnetic saturation occurs when the intensity of the external magnetic field further increases. Here, if the intensity of the bias magnetic field is made equal to or higher than the magnetic saturation field intensity of the magnetoresistive element 51, simultaneously with the external magnetic field becoming larger than the bias magnetic field, the free layer 51q quickly saturates, so the magnetoresistance ΔR increases and decreases in a step function with respect to the external magnetic field.

[0134] The magnetoresistive element 51 arranged in at least two of the plurality of blocks may have a free layer 51q to which a bias magnetic field is applied. In addition, the magnetoresistive element 51 arranged in at least two of the plurality of blocks may have a free layer 51q to which no bias magnetic field is applied. Moreover, the block in which the magnetoresistive element 51 having a free layer 51q to which no bias magnetic field is applied is arranged may be relatively arranged farther from the conductor 24 (that is, a portion where a weak magnetic field is applied) than the block in which the magnetoresistive element 51 having a free layer to which a bias magnetic field is applied is arranged.

[0135] In Figure 8A FIG. shows the block arrangement of the magnetoresistive element 51 that uses a full-bridge type magnetic sensor 60 to form a dual-linear type current sensor 110 in which the overcurrent detection threshold varies according to the amount of electricity conducted. In the magnetic sensor 60 of this example, in addition to the first block 62a and the second block 62b shown in Figure 8A (omitted in Figure 2A ), the plurality of blocks arranged on the substrate 61 also include two extended blocks, that is, a third block 62c and a fourth block 62d. However, the four blocks in which the magnetoresistive elements 51 that respectively form the magnetoelectric conversion units 62 and 63 are arranged are symmetrically arranged with respect to the reference line L. Therefore, only the four blocks 62a to 62d in the magnetoelectric conversion unit 62 are shown, and the four blocks in the magnetoelectric conversion unit 63 are omitted.

[0136] The first to fourth blocks 62a to 62d each include 4 sub-blocks 62a 1 ~62a 4 、62b 1 ~62b 4 、62c 1 ~62c 4 、62d 1 ~62d 4 。Moreover, on one surface of the substrate 61, a plurality of wirings (not shown) are laid that electrically connect the plurality of blocks 62a, 62b, 62c, 62d or the plurality of sub-blocks 62a 1 ~62a 4 、62b 1 ~62b 4 、62c 1 ~62c 4 、62d 1 ~62d 4 inside them. Similarly to the magnetoelectric conversion unit 62, the plurality of blocks in the magnetoelectric conversion unit 63 also each include 4 sub-blocks, and a plurality of wirings for electrically connecting them are provided.

[0137] A plurality of magnetoresistive elements 51 are connected in series for each of the plurality of sub-blocks 62a 1 ~62a 4 、62b 1 ~62b 4 、62c 1 ~62c 4 、62d 1 ~62d 4 using electrode pieces 52 and 53 to form a part of the resistance arms R1 to R4, and a Wheatstone bridge circuit is composed of these resistance arms R1 to R4 (refer to Figure 3 ).

[0138] The magnetosensitive directions of the magnetoresistive elements 51 disposed in each of the sub-blocks 62a 1 ~62a 4 、62b 1 ~62b 4 、62c 1 ~62c 4 、62d 1 ~62d 4 in the blocks 62a to 62d are the same as the magnetosensitive directions in the magnetic sensors 60 and 60h (refer to Figure 7A and Figure 7B ) that constitute the aforementioned quadruple linear current sensor 110. However, disposed in the first block 62a and the second block 62b (sub-blocks 62a 1 ~62a 4 、62b 1 ~62b4 ) The magnetoresistive element 51 within has a free layer 51q to which a bias magnetic field is applied. Here, it is assumed that the bias magnetic field of the magnetoresistive element 51 in the first block 62a is larger than that of the magnetoresistive element 51 in the second block 62b. Additionally, it is assumed that all bias magnetic fields are approximately equal to the magnetic field strength at magnetic saturation. The magnetoresistive elements 51 configured in the third block 62c and the fourth block 62d (sub-blocks 62c 1 ~62c 4 、62d 1 ~62d 4 ) have free layers 51q to which no bias magnetic field is applied.

[0139] The first block 62a (sub-blocks 62a 1 ~62a 4 ) and the second block 62b (sub-blocks 62b 1 ~62b 4 ) are arranged on the arm 24c 1 respectively on the +X side and the -X side of the arm center line. Thus, the magnetoresistive elements 51 in the first block 62a and

[0140] the second block 62b are respectively applied with a magnetic field Bx of approximately maximum intensity generated by the measured current flowing through the conductor 24. The third block 62c (sub-blocks 62c 1 ~62c 4 ) and the fourth block 62d (sub-blocks 62d 1 ~62d 4 ) are respectively located on the inner side and the reference axis L side of the arm 24c 1 、24c 2 between the two arms 24c 1 . Thus, the magnetoresistive elements 51 in the third block 62c and the fourth block 62d are respectively applied with a relatively small and minimum intensity magnetic field Bx generated by the measured current flowing through the conductor 24.

[0141] In Figure 8B shows the block arrangement of the magnetoresistive elements 51 of a dual-linear type current sensor 110 in which the threshold for overcurrent detection using a half-bridge type magnetic sensor 60h varies according to the amount of electricity conducted. In the magnetic sensor 60h of this example, among the multiple blocks arranged on the substrate 61 (omitted in Figure 8B ), in addition to the first block 62a and the second block 62b shown in Figure 5A , there are also two extended blocks, namely the third block 62c and the fourth block 62d. However, the four blocks in which the magnetoresistive elements 51 respectively forming the magnetoelectric conversion parts 62, 63 are arranged symmetrically with respect to the reference line L. Therefore, only the four blocks 62a to 62d in the magnetoelectric conversion part 62 are shown, and the four blocks in the magnetoelectric conversion part 63 are omitted.

[0142] The first to fourth blocks 62a to 62d each include 2 sub-blocks 62a 1 、62a 2 、62b 1 、62b 2 、62c 1 、62c 2 、62d 1 、62d 2 。Moreover, on one surface of the substrate 61, a plurality of wirings (not shown) are laid out for electrically connecting the plurality of blocks 62a, 62b, 62c, 62d or the plurality of sub-blocks 62a 1 、62a 2 、62b 1 、62b 2 、62c 1 、62c 2 、62d 1 、62d 2 inside them. Similar to the magnetoelectric conversion unit 62, the plurality of blocks in the magnetoelectric conversion unit 63 also each include 2 sub-blocks, and a plurality of wirings for electrically connecting them are provided.

[0143] A plurality of magnetoresistive elements 51 are connected in series using electrode pieces 52 and 53 for each of the plurality of sub-blocks 62a 1 、62a 2 、62b 1 、62b 2 、62c 1 、62c 2 、62d 1 、62d 2 to form a part of the resistance arms R1 and R2, and a half-bridge circuit is composed of these resistance arms R1 and R2 (refer to Figure 5B ).

[0144] The magnetosensitive directions of the magnetoresistive elements 51 disposed in each of the sub-blocks 62a 1 、62a 2 、62b 1 、62b 2 、62c 1 、62c 2 、62d 1 、62d 2 in each of the blocks 62a to 62d are the same as the magnetosensitive directions of the magnetic sensors 60 and 60h (refer to Figure 7A and Figure 7B ) constituting the aforementioned quadruple linear current sensor 110. However, disposed in the first block 62a and the second block 62b (sub-blocks 62a 1 、62a 2 、62b 1 、62b 2) has a free layer 51q to which a bias magnetic field is applied. Here, it is assumed that the bias magnetic field of the magnetoresistive element 51 in the first block 62a is larger than the bias magnetic field of the magnetoresistive element 51 in the second block 62b. In addition, it is assumed that all bias magnetic fields are substantially equal to the magnetic field strength of magnetoresistive saturation. 1 , 62c 2 , 62d 1 , 62d 2 ) has a free layer 51q to which no bias magnetic field is applied.

[0145] The first block 62a (sub-block 62a 1 , 62a 2 ) and the second block 62b (sub-block 62b 1 、62b 2 ) is arranged on the arm 24c 1 The magnetic field Bx having the maximum strength generated by the measured current flowing through the conductor 24 is applied to the magnetoresistive elements 51 in the first block 62a and the second block 62b. 1 , 62c 2 ) and the fourth block 62d (sub-block 62d 1 , 62d 2 ) in two arms 24c 1 , 24c 2 The arms 24c are located between 1 The inner side of the reference axis L. Thus, the magnetic field Bx of a relatively small and minimum intensity generated by the measured current flowing through the conductor 24 is applied to the magnetoresistive elements 51 in the third block 62c and the fourth block 62d.

[0146] exist Figure 8C The amount of current flowing through the conductor 24 is shown in FIG. Figure 8A The magnetic sensor 60 and Figure 8B The magnetic resistance of the four blocks 62a to 62d of the magnetic sensor 60h changes by ΔR. 1 ~62a 4 or 62a 1 ~62a 2 ) is applied with a magnetic field Bx of approximately the maximum strength generated by the measured current flowing through the conductor 24, and exhibits a magnetic resistance ΔR that rises rapidly and becomes magnetically saturated if the current Iina exceeds the magnetic field strength that will offset the relatively large bias magnetic field. 62a The second block 62b (sub-block 62b 1 ~62b4 or 62b 1 ~62b 2 ) The magnetoresistive element 51 included therein is applied with a magnetic field Bx having a substantially maximum intensity generated by the current to be measured, and exhibits a magnetoresistance ΔR that rapidly increases and magnetically saturates if the current amount Iinb (<Iina) exceeds the intensity of the magnetic field that cancels the relatively small bias magnetic field 62b . The third block 62c (sub-block 62c 1 ~62c 4 or 62c 1 ~62c 2 ) The magnetoresistive element 51 included therein is applied with a magnetic field Bx having a relatively small intensity generated by the current to be measured, exhibits a relatively small sensitivity with respect to the current amount Iin, and magnetically saturates above a small current amount Iinc (=Iinb) 62c . The fourth block 62d (sub-block 62d 1 ~62d 4 or 62d 1 ~62d 2 ) The magnetoresistive element 51 included therein is applied with a magnetic field Bx having the minimum intensity generated by the current to be measured, exhibits the minimum sensitivity with respect to the current amount Iin (smaller than the magnetoresistance ΔR 62c even further) and magnetically saturates above a large current amount Iind (=Iina>Iinb) 62d .

[0147] The magnetoresistance change ΔR(total) of each of the resistance arms R1~R4 or R1, R2 is given by the linear sum of the magnetoresistances ΔR 62a , ΔR 62b , ΔR 62c , ΔR 62d of the magnetoresistive elements 51 in the four blocks 62a~62d. The magnetoresistance change ΔR exhibits the following double linearity with respect to the current to be measured Iin: it increases with the strongest sensitivity (i.e., the maximum slope) in the range of the current amount 0~Iinb, rapidly increases at the current amount Iinb, increases with a weak sensitivity (small slope) in the range of the current amount Iinb~Iina, rapidly increases at the current amount Iina, and magnetically saturates above the current amount Iina. It should be noted that the sensitivities in the ranges of the current amount 0~Iinb and Iinb~Iina can be adjusted by the positions of the blocks 62c, 62d on the substrate 61 related to the X-axis direction.

[0148] Here, the range of the current amount from 0 to Iinb (= Iinc) is set as the range during normal operation, the current amount Iinb is set as the threshold for normal operation, the range of the current amount from Iinb to Iina (= Iind) is set as the range during peak operation, and the current amount Iina is set as the threshold for peak operation. The thresholds Iinb and Iina for overcurrent detection change according to the energization amount Iin, and it is possible to detect the current amount Iin with high sensitivity within a low magnetoresistance change range during normal operation, and to detect the current amount Iin with low sensitivity within a high magnetoresistance change range during peak operation exceeding the normal operation threshold Iinb. In addition, by the magnetoresistance change ΔR increasing rapidly at the current amounts Iinb and Iina, it is possible to easily detect whether it is normal operation, peak operation, or a current range above that.

[0149] In Figure 9A shows the block configuration of the magnetoresistive element 51 that uses the full-bridge type magnetic sensor 60 to form the multi-linear type current sensor 110 whose sensitivity changes according to the degree of overcurrent. In the magnetic sensor 60 of this example, the multiple blocks arranged on the substrate 61 (omitted in Figure 9A ) include the first block 62a and the second block 62b. However, the two blocks that respectively form the magnetoelectric conversion parts 62 and 63 and arrange the magnetoresistive elements 51 are arranged symmetrically with respect to the reference line L. Therefore, only the two blocks 62a and 62b in the magnetoelectric conversion part 62 are shown, and the illustration of the two blocks in the magnetoelectric conversion part 63 is omitted. It should be noted that in this example, the second block 62b is arranged on the side of the reference line L with respect to the first block 62a. Thus, the magnetic sensor 60 can be formed with a small chip area.

[0150] The first block 62a and the second block 62b each include 4 sub-blocks 62a 1 ~62a 4 、62b 1 ~62b 4 . Moreover, on one surface of the substrate 61, a plurality of wirings (not shown) that electrically connect the multiple blocks 62a, 62b or the multiple sub-blocks 62a 1 ~62a 4 、62b 1 ~62b 4 inside them are laid. Similar to the magnetoelectric conversion part 62, the multiple blocks in the magnetoelectric conversion part 63 also each include 4 sub-blocks, and a plurality of wirings for electrically connecting them are provided.

[0151] The multiple magnetoresistive elements 51 are for the multiple sub-blocks 62a 1 ~62a 4 、62b 1 ~62b 4Each of them forms part of resistance arms R1 to R4 by connecting electrode pieces 52 and 53 in series, and a Wheatstone bridge circuit is composed of these resistance arms R1 to R4 (refer to Figure 3 ).

[0152] The magnetic sensitive directions of the magnetoresistive elements 51 disposed in the respective sub-blocks 62a of the respective blocks 62a and 62b 1 ~62a 4 、62b 1 ~62b 4 are the same as the magnetic sensitive directions of the magnetic sensors 60 and 60h (refer to Figure 7A and Figure 7B ) that constitute the aforementioned quadruple linear current sensor 110. However, the magnetoresistive element 51 disposed in the first block 62a (sub-blocks 62a 1 ~62a 4 ) has a free layer 51q to which a bias magnetic field is applied. Here, it is assumed that the bias magnetic field is sufficiently smaller than the magnetic field intensity at which the magnetoresistive element 51 is magnetically saturated. The magnetoresistive element 51 disposed in the second block 62b (sub-blocks 62b 1 ~62b 4 ) has a free layer 51q to which no bias magnetic field is applied.

[0153] The first block 62a (sub-blocks 62a 1 ~62a 4 ) is disposed near the center line on the arm 24c 1 . Thus, the magnetoresistive element 51 in the first block 62a is applied with a magnetic field Bx having a substantially maximum intensity generated by the measured current flowing through the conductor 24. The second block 62b (sub-blocks 62b 1 ~62b 4 ) is located between the two arms 24c 1 、24c 2 . Thus, the magnetoresistive element 51 in the second block 62b is applied with a magnetic field Bx having a small intensity generated by the measured current flowing through the conductor 24.

[0154] In Figure 9B , a block configuration of the magnetoresistive element 51 that uses the half-bridge type magnetic sensor 60h to form a multiple linear current sensor 110 whose sensitivity changes according to the degree of overcurrent is shown. In the magnetic sensor 60h of this example, it is disposed on the substrate 61 (in Figure 9B(omitted in the figure) The multiple blocks on the [substrate] include a first block 62a and a second block 62b. However, the two blocks configuring the magnetoresistive elements 51 that respectively form the magnetoelectric conversion units 62 and 63 are symmetrically arranged with respect to the reference line L. Therefore, only the two blocks 62a and 62b in the magnetoelectric conversion unit 62 are illustrated, and the illustration of the two blocks in the magnetoelectric conversion unit 63 is omitted. It should be noted that, in this example, the second block 62b is arranged on the reference line L side with respect to the first block 62a. Thus, the magnetic sensor 60 can be formed with a small chip area.

[0155] The first block 62a and the second block 62b each include two sub-blocks 62a 1 、62a 2 、62b 1 、62b 2 。Moreover, on one surface of the substrate 61, a plurality of wirings (not illustrated) that electrically connect the multiple blocks 62a, 62b or the multiple sub-blocks 62a 1 、62a 2 、62b 1 、62b 2 inside them are laid. Similar to the magnetoelectric conversion unit 62, the multiple blocks in the magnetoelectric conversion unit 63 also each include two sub-blocks, and a plurality of wirings for electrically connecting them are provided.

[0156] For each of the multiple sub-blocks 62a 1 、62a 2 、62b 1 、62b 2 among the multiple magnetoresistive elements 51, they are connected in series using the electrode pieces 52 and 53 to form a part of the resistance arms R1 and R2, and a half-bridge circuit is composed of these resistance arms R1 and R2 (refer to Figure 5B ).

[0157] The magnetosensitive directions of the magnetoresistive elements 51 in each sub-block 62a 1 、62a 2 、62b 1 、62b 2 arranged in each block 62a and 62b are the same as the magnetosensitive directions in the magnetic sensors 60 and 60h (refer to Figure 7A and Figure 7B ) that constitute the aforementioned quadruple linear current sensor 110. However, the magnetoresistive elements 51 in the first block 62a (sub-blocks 62a 1 、62a 2 ) have a free layer 51q to which a bias magnetic field is applied. Here, it is assumed that the bias magnetic field is sufficiently smaller than the magnetic field intensity at which the magnetoresistive element 51 is magnetically saturated. The magnetoresistive elements 51 in the second block 62b (sub-blocks 62b 1 、62b 2) The magnetoresistive element 51 within has a free layer 51q to which no bias magnetic field is applied. Here, it is assumed that the magnetoresistive element 51 within the second block 62b is magnetically saturated at a magnetic field intensity approximately equal to that of the bias magnetic field of the magnetoresistive element 51 within the first block 62a.

[0158] The first block 62a (sub - block 62a 1 , 62a 2 ) is disposed near the center line on the arm 24c 1 . Thus, the magnetoresistive element 51 within the first block 62a is applied with a magnetic field Bx of approximately maximum intensity generated by the measured current flowing through the conductor 24. The second block 62b (sub - block 62b 1 , 62b 2 ) is located between the two arms 24c 1 , 24c 2 . Thus, the magnetoresistive element 51 within the second block 62b is applied with a magnetic field Bx of small intensity generated by the measured current flowing through the conductor 24.

[0159] In Figure 9C is shown the magnetoresistance change of the magnetoresistive elements 51 within the two blocks 62a, 62b of the Figure 9A magnetic sensor 60 and Figure 9B magnetic sensor 60h with respect to the amount of electricity passing through the conductor 24, and the magnetoresistance change of each of the resistance arms R1 - R4 or R1, R2. The magnetoresistive element 51 included in the first block 62a (sub - block 62a 1 - 62a 4 or 62a 1 - 62a 2 ) is applied with a magnetic field Bx of approximately maximum intensity generated by the measured current flowing through the conductor 24, and exhibits a magnetoresistance ΔR that increases if the current amount Iin exceeds the current amount Iinb that generates a magnetic field of intensity sufficient to cancel the bias magnetic field, and saturates magnetically at a current amount Iina greater than the current amount Iinb 62a . The magnetoresistive element 51 included in the second block 62b (sub - block 62b 1 - 62b 4 or 62b 1 - 62b 2 ) is applied with a small magnetic field Bx generated by the measured current, and exhibits a magnetoresistance ΔR that increases with a small sensitivity (smaller than the magnetoresistance ΔR 62a ) with respect to the current amount Iin and saturates magnetically at a current amount Iinb or above 62b .

[0160] The magnetoresistance change ΔR(total) of each of the resistance arms R1 - R4 or R1, R2 is composed of the magnetoresistances ΔR 62a , ΔR 62bThe linearity is given. The magnetoresistance change ΔR shows the following double linearity with respect to the measured current Iin: it increases with a weak sensitivity (i.e., a small slope) in the current range of 0 to Iinb, increases with a strong sensitivity (a large slope) in the current range of Iinb to Iina, and magnetically saturates above the current Iina. It should be noted that the two sensitivities in the double linearity can be adjusted by the positions of the blocks 62a and 62b on the substrate 61 related to the X-axis direction.

[0161] Here, the current range of 0 to Iinb is set as the normal control range, the current range of Iinb to Iina is set as the PWM control range, and the range above the current Iina is set as the control range in case of a severe fault. Since the sensitivity changes according to the degree of overcurrent, the current Iin is detected with a weak sensitivity during normal operation. If the current Iin exceeds the threshold Iinb, the current Iin is detected with a strong sensitivity for, for example, PWM control of the switch of the power conversion circuit. If the current Iin exceeds the threshold Iina, it is determined as a severe fault and the switch is turned off. On the other hand, in this range, current measurement is not required, so the magnetoresistance of the magnetoresistive element 51 is saturated. By enhancing the sensitivity in the current range of Iinb to Iina, fine PWM control can be performed in a manner that avoids the current exceeding Iina and causing a severe fault.

[0162] In Figure 10A shows the characteristics of the magnetoresistance change ΔR of the magnetoresistive element 51 within one block or sub-block with respect to the magnetization M of the free layer 51q. The magnetoresistance change ΔR of the magnetoresistive element 51 shows the following characteristics: it becomes zero when the magnetizations of the free layer 51q and the fixed layer 51o are parallel to each other (P direction), does not change until the magnetization M of the free layer exceeds the intensity that cancels the bias magnetic field applied to the free layer 51q, linearly increases with respect to the magnetization M if it exceeds, and magnetically saturates in the direction where the magnetizations of the free layer 51q and the fixed layer 51o are anti-parallel (AP direction) if the magnetization M becomes further larger. The magnetoresistance at saturation is denoted as the saturation resistance ΔR TMR . The center of the magnetoresistance variation is denoted as the offset ΔIin. The characteristics of the magnetoresistance change ΔR can be expressed using the sigmoid function σ(M) (for M → +∞, σ(M) → 1, for M → -∞, σ(M) is 0).

[0163] In Figure 10B shows the general formula of the magnetoresistance change ΔR of each resistance arm R1 to R4. The magnetoresistance ΔR of each resistance arm R1 to R4 can be expressed as the linear sum of the magnetoresistances of the magnetoresistive elements 51 in multiple blocks k, ΔR = Σ k ΔR TMRk ·σ(M k)。Here, the magnetization M induced in the magnetoresistive element 51 in each block k with respect to the measured current Iin flowing through the conductor 24 is given. k = w k ·Iin + θ k , where k is an index indicating a plurality of blocks, w k is a linear coefficient with respect to the current amount Iin (the product of the magnetic susceptibility χ and the magnetoelectric conversion coefficient K determined according to the position x of the block k, i.e., the magnetic field applied to the magnetoresistive element 51 when a unit current flows through the conductor 24), and θ k is a coefficient determined by the bias magnetic field applied to the free layer 51q (the product with the magnetic susceptibility χ). The saturation resistance ΔR TMRk can be adjusted by the TMR ratio, the zero magnetic field resistance (the number of series connections within the block of the magnetoresistive element 51, the cross-sectional area of the magnetoresistive element 51, the film thickness of the tunnel layer 51p, etc.). The linear coefficient w k can be adjusted by the magnetic susceptibility χ of the free layer and the positions of the plurality of blocks k on the conductor 24. Moreover, the shape of the free layer and the perpendicular magnetic anisotropy can be designed to adjust the easy magnetization axis. The offset amount ΔIin can be adjusted by the intensity of the bias magnetic field. It is possible to adjust by disposing a hard magnetic body near the free layer 51q, bonding an antiferromagnet (IrMn, PtMn, manganese nitride Mn x N y , nickel oxide Ni x O y , etc.) to the free layer 51q, or a ferromagnetic / antiferromagnetic layer stack structure ([Co / Pt]n, [Co / Pd]n, etc.). Therefore, by designing ΔR TMRk , w k , and θ k for each of the plurality of blocks k, it is possible to realize a magnetoresistive change exhibiting arbitrary characteristics.

[0164] In Figure 11 , four modes of the change in the output voltage Vout of the current sensor 110 (i.e., the magnetoresistive change ΔR of the magnetic sensors 60, 60h) with respect to the amount of electricity conducted are shown. (1) shows the following logarithmic growth: the output voltage Vout increases as the current amount Iin increases (dVout / dIin > 0), but the slope gradually slows down (d 2 Vout / dIin 2 < 0) and saturates. (2) shows the following exponential growth: the output voltage Vout increases as the current amount Iin increases (dVout / dIin > 0), but the slope gradually increases (d 2 Vout / dIin 2(>0), saturates when exceeding the threshold. (3) Shows the following monotonically increasing: the output voltage Vout increases as the current amount Iin increases (dVout / dIin > 0), but increases or decreases its slope whenever exceeding multiple thresholds (d 2 Vout / dIin 2 (arbitrary), saturates when exceeding the threshold. (4) Shows the following arbitrary increase: the output voltage Vout increases or decreases and increases or decreases the slope (dVout / dIin and d 2 Vout / dIin 2 (arbitrary), saturates when exceeding the last threshold.

[0165] In Figure 12 shows the polarity of the output voltage Vout of the current sensor 110 (i.e., the magnetoresistance change ΔR of the magnetic sensors 60, 60h) with respect to the energization amount. (a) Shows the unipolar characteristic in which the output voltage Vout varies with respect to the positive current amount Iin and does not vary with respect to the negative current amount Iin. (b) Shows the bipolar symmetric characteristic (Vout(-Iin) = -Vout(Iin)) in which the output voltage Vout varies symmetrically with respect to the positive and negative current amounts Iin. (c) Shows the bipolar asymmetric characteristic in which the output voltage Vout varies with respect to the positive and negative current amounts Iin but the manner of its change is asymmetric under the positive and negative current amounts Iin.

[0166] In Figure 13 shows Figure 11 the example of the combination of the manner of change of the output voltage Vout of the magnetic sensors 60, 60h shown in Figure 12 and the polarity shown in

[0167] In the upper section, shows the example of the combination of the (a) unipolar characteristic and the (4) arbitrary increase, that is, the sawtooth characteristic. In this example, the output voltage Vout varies only with respect to the positive current amount Iin, linearly increases as the current amount Iin increases, becomes zero if the current amount Iin exceeds the thresholds Iina, Iinb, Iinc, and linearly increases again from here. By using the magnetic sensors 60, 60h having the sawtooth characteristic of this output voltage in combination with another current sensor having a large range and low precision, it is possible to roughly measure the current amount using the other current sensor to determine which sawtooth of the sawtooth characteristic of the magnetic sensors 60, 60h, and to precisely determine the current amount Iin based on the output voltage Vout of the magnetic sensors 60, 60h within the range of this sawtooth.

[0168] An example of the combination of (c) bipolar asymmetric characteristics and (1) logarithmic growth and (3) monotonic increase is shown in the following paragraph. In this example, the output voltage Vout increases linearly as the current amount Iin increases in the positive direction. However, if the current amount Iin exceeds the threshold Iina, the slope decreases. If it exceeds the threshold Iinb, it saturates. If the current amount Iin increases in the negative direction and exceeds the threshold Iinc, it increases in the negative direction in a step function manner and saturates. When using the magnetic sensors 60, 60h having this characteristic to measure, for example, the coil current of a step-down converter circuit operating in a continuous conduction mode, during normal times, since the polarity of the current is determined, the positive current amount can be measured precisely, and the reverse current generated during a fault can be detected to determine normal or abnormal conditions.

[0169] There are a total of 20 ways for the characteristics of the magnetic sensors 60, 60h with respect to the current amount Iin, including combinations of (a) unipolar characteristics and (1)-(4) increasing characteristics (4 types), (b) bipolar symmetric characteristics and (1)-(4) increasing characteristics (4 types), and (c) bipolar asymmetric characteristics and (1)-(4) increasing characteristics (12 types). Six basic characteristics I ± , II ± , III ± of the magnetoresistive element 51 used to form these 20 ways are determined. These basic characteristics can be achieved by determining the block configuration of the magnetoresistive elements within each block (the orientation of the magnetic field generated by the measured current), the magnetic field detection direction (magnetosensitive direction), and the direction of the bias magnetic field.

[0170] In Figure 14A an example of the block configuration, magnetic field detection direction, and bias magnetic field direction of the magnetoresistive element 51 having the basic characteristic of the first type I ± is shown. It should be noted that the blocks of the magnetoresistive element 51 can be symmetrically arranged with respect to the reference line L on the substrate 61, and the magnetoresistive elements 51 arranged within the block can be symmetrically formed with respect to the reference line L, that is, the magnetoelectric conversion units 62, 63 can be symmetrically formed. Here, only the basic characteristics of the magnetoresistive element 51 arranged on the +X side with respect to the reference line L are considered.

[0171] In this example, the block of the magnetoresistive element 51 is located on the +X side with respect to the reference line L on the upper surface of the substrate 61. As an example, it is located on the arm 24c 1 of the conductor 24. The magnetoresistive element 51 within this block is applied with a magnetic field B in the +X direction when the measured current Iin is input to the arm 24c 1 . Type I +The magnetoresistive element 51 has a magnetization (pin) of the fixed phase fixed antiparallel (-X direction) with respect to the X magnetic field B, and no bias magnetic field is applied. The type I- magnetoresistive element 51 has a magnetization (pin) of the fixed phase parallel (+X direction) with respect to the X magnetic field B, and no bias magnetic field is applied.

[0172] In Figure 14B shows the characteristics of the magnetoresistance change ΔR with respect to the input current Iin presented by the first type I ± magnetoresistive element 51. The magnetoresistance change ΔR (shown by the solid line) of the type I + magnetoresistive element 51 exhibits the following characteristics: Since no bias magnetic field is applied, zero current becomes the variation reference. Because the pin direction is antiparallel to the magnetic field B, it increases as the input current Iin increases in the positive direction and saturates at a larger input current Iin. In addition, it decreases as the input current Iin increases in the negative direction (increases in the negative direction) and saturates at a larger negative input current Iin. The magnetoresistance change ΔR (shown by the dashed line) of the type I- magnetoresistive element 51 exhibits the following characteristics: Since no bias magnetic field is applied, zero current becomes the variation reference. Because the pin direction is parallel to the magnetic field B, it decreases as the input current Iin increases in the positive direction (increases in the negative direction) and saturates at a larger input current Iin. In addition, it increases as the input current Iin increases in the negative direction and saturates at a larger negative input current Iin.

[0173] In Figure 15A shows an example of the block configuration, magnetic field detection direction, and bias magnetic field direction of the magnetoresistive element 51 having the basic characteristics of the second type II ± The block of the magnetoresistive element 51 is located on the +X side with respect to the reference line L on the upper surface of the substrate 61 (in this example, located on the arm 24c 1 of the conductor 24). The magnetoresistive element 51 within the block is applied with a magnetic field B in the +X direction when the measured current Iin is input to the arm 24c 1 . The type II + magnetoresistive element 51 has a magnetization (pin) of the fixed phase fixed antiparallel (-X direction) with respect to the X magnetic field B, and is applied with an antiparallel (-X direction) bias magnetic field. The type II - magnetoresistive element 51 has a magnetization (pin) of the fixed phase parallel (+X direction) with respect to the X magnetic field B, and is applied with an antiparallel (-X direction) bias magnetic field.

[0174] In Figure 15B shows the characteristics of the magnetoresistance change ΔR with respect to the input current Iin presented by the second type II ± magnetoresistive element 51. The type II +The magnetoresistance change ΔR (shown by a solid line) of the magnetoresistive element 51 exhibits the following characteristics: It varies at a current amount Iin equal to or greater than a positive current I due to an antiparallel bias magnetic field being applied. Since the pin direction is antiparallel to the magnetic field B, it increases as the current amount Iin increases in the positive direction and saturates at a larger current amount Iin. Type II +0 and above, and since the pin direction is antiparallel to the magnetic field B, it increases as the current amount Iin increases in the positive direction and saturates at a larger current amount Iin. Type II - The magnetoresistance change ΔR (shown by a dashed line) of the magnetoresistive element 51 of Type II exhibits the following characteristics: It varies at a current amount Iin equal to or greater than a positive current I due to an antiparallel bias magnetic field being applied. +0 and above, and since the pin direction is parallel to the magnetic field B, it decreases (increases in the negative direction) as the current amount Iin increases in the positive direction and saturates at a larger current amount Iin.

[0175] In Figure 16A FIG. 13 is an example showing the block configuration, the magnetic field detection direction, and the direction of the bias magnetic field of the magnetoresistive element 51 having the basic characteristics of the third type III. The block of the magnetoresistive element 51 is located on the +X side with respect to the reference line L on the upper surface of the substrate 61 (in this example, on the arm 24c ± of the conductor 24). The magnetoresistive element 51 within the block is applied with a magnetic field B in the +X direction when the measured current Iin is input to the arm 24c. Type III 1 The magnetoresistive element 51 of Type III has a magnetization (pin) of the fixed phase fixed antiparallel (-X direction) with respect to the X magnetic field B and is applied with a parallel (+X direction) bias magnetic field. Type III 1 The magnetoresistive element 51 of Type III has a magnetization (pin) of the fixed phase parallel (+X direction) with respect to the X magnetic field B and is applied with a parallel (+X direction) bias magnetic field. + The magnetoresistive element 51 of Type III has a magnetization (pin) of the fixed phase fixed antiparallel (-X direction) with respect to the X magnetic field B and is applied with a parallel (+X direction) bias magnetic field. Type III - The magnetoresistive element 51 of Type III has a magnetization (pin) of the fixed phase parallel (+X direction) with respect to the X magnetic field B and is applied with a parallel (+X direction) bias magnetic field.

[0176] In Figure 16B FIG. 14 shows the characteristics of the magnetoresistance change ΔR with respect to the amount of current Iin exhibited by the magnetoresistive element 51 of the third type III. The magnetoresistance change ΔR (shown by a solid line) of the magnetoresistive element 51 of Type III exhibits the following characteristics: It varies at a current amount Iin equal to or less than a negative current I due to a parallel bias magnetic field being applied. ± Since the pin direction is antiparallel to the magnetic field B, it decreases (increases in the negative direction) as the current amount Iin increases in the negative direction and saturates at a larger current amount Iin. Type III + The magnetoresistance change ΔR (shown by a solid line) of the magnetoresistive element 51 of Type III exhibits the following characteristics: It varies at a current amount Iin equal to or less than a negative current I due to a parallel bias magnetic field being applied. -0 Since the pin direction is antiparallel to the magnetic field B, it decreases (increases in the negative direction) as the current amount Iin increases in the negative direction and saturates at a larger current amount Iin. Type III - The magnetoresistance change ΔR (shown by a dashed line) of the magnetoresistive element 51 of Type III exhibits the following characteristics: It varies at a current amount Iin equal to or less than a negative current I due to a parallel bias magnetic field being applied. -0It varies under the following input current Iin. Since the pin direction is parallel to the magnetic field B, it increases as the input current Iin increases in the negative direction and saturates at a larger input current Iin.

[0177] Three types I are used ± , II ± , III ± of magnetoresistive elements 51 to reproduce the characteristics of the magnetoresistance change ΔR (i.e., the output voltage Vout (∝ΔR)) of the magnetosensors 60, 60h with respect to the input current Iin. As an example, four characteristics combined from the (b) bipolar symmetric characteristic and the (1)-(4) increasing characteristics, four characteristics combined from the (a) unipolar characteristic and the (1)-(4) increasing characteristics, and two characteristics combined from the (c) bipolar asymmetric characteristic and the (3) increasing characteristic are reproduced.

[0178] In Figure 17A the type and block configuration of the magnetoresistive element 51 exhibiting the (b) bipolar symmetric and (1) logarithmic growth characteristics are shown. It should be noted that the blocks of the magnetoresistive element 51 can be symmetrically arranged on the substrate 61 with respect to the reference line L, and the magnetoresistive elements 51 arranged within the block can be symmetrically formed with respect to the reference line L, that is, the magnetoelectric conversion units 62, 63 can be symmetrically formed. Here, only the type and block configuration of the magnetoresistive element 51 arranged on the +X side with respect to the reference line L are considered. In addition, the magnetoresistive elements 51 within the sub-blocks included in each block can be appropriately connected to form the resistance arms R1-R4 in the full-bridge type magnetosensor 60 or the resistance arms R1-R2 in the half-bridge type magnetosensor 60h.

[0179] In this example, on the upper surface of the substrate 61, three blocks of magnetoresistive elements 51 of types I + (1)-I + (3) are arranged in a row in the X-axis direction. The magnetoresistive elements 51 of types I + (1)-I + (3) are magnetically saturated at input currents Iin1, Iin2, Iin3 (Iin1 < Iin2 < Iin3) or more, respectively. The block of the magnetoresistive element 51 of type I + (1) is located on the center line of the arm 24c 1 of the conductor 24, and the maximum intensity magnetic field generated by the measured current Iin flowing through the conductor 24 is applied to these magnetoresistive elements 51. The block of the magnetoresistive element 51 of type I + (2) is located on the inner side of the arm 24c 1 , and a medium-intensity magnetic field generated by the measured current Iin is applied to these magnetoresistive elements 51. The block of the magnetoresistive element 51 of type I + (3) is located on the arm 24c 1 , 24c 2between which, a magnetic field with the minimum intensity generated by the measured current Iin is applied to these magnetoresistive elements 51.

[0180] In Figure 17B is shown Figure 17A the characteristics of the magnetoresistance change ΔR with respect to the energization amount Iin exhibited by each block of the magnetoresistive element 51 and the magnetic sensors 60, 60h (each resistance arm R1 to R4 or R1, R2). Type I + (1) The magnetoresistive element 51 has the strongest sensitivity with respect to the current amount Iin when a magnetic field with the maximum intensity generated by the measured current Iin is applied, and is magnetically saturated at an electric current amount Iin1 or more. Type I + (2) The magnetoresistive element 51 has a medium sensitivity with respect to the current amount Iin when a magnetic field with a medium intensity is applied, and is magnetically saturated at an electric current amount Iin2 (>Iin1) or more. Type I + (3) The magnetoresistive element 51 has the weakest sensitivity with respect to the current amount Iin when a magnetic field with the minimum intensity is applied, and is magnetically saturated at an electric current amount Iin3 (>Iin2) or more.

[0181] The magnetoresistance change ΔR(total) of the magnetic sensors 60, 60h (each resistance arm R1 to R4 or R1, R2) is given by the linear sum of the magnetoresistances of three types I + (1) to I + (3) of the magnetoresistive element 51. Therefore, the magnetoresistance change ΔR with respect to the positive measured current Iin increases with the strongest sensitivity (i.e., the maximum slope) in the range of the current amount 0 to Iin1, increases with a medium sensitivity (medium slope) in the range of the current amount Iin1 to Iin2, increases with the weakest sensitivity (minimum slope) in the range of the current amount Iin2 to Iin3, and is magnetically saturated at an electric current amount Iin3 or more. In addition, the magnetoresistance change ΔR with respect to the negative measured current Iin decreases (increases in the negative direction) with the strongest sensitivity (i.e., the maximum slope) in the range of the current amount 0 to -Iin1, decreases (increases in the negative direction) with a medium sensitivity (medium slope) in the range of the current amount -Iin1 to -Iin2, decreases (increases in the negative direction) with the weakest sensitivity (minimum slope) in the range of the current amount -Iin2 to -Iin3, and is magnetically saturated at an electric current amount -Iin3 or less.

[0182] In Figure 18A is shown the type and block configuration of the magnetoresistive element 51 exhibiting (b) two-pole symmetry and (2) exponential growth characteristics. In this example, on the upper surface of the substrate 61, types I + , II + (1), II + (2), III + (1), III+ Five blocks of the magnetoresistive element 51 of (2). Type I + The blocks of the magnetoresistive element 51 are located on the arms 24c of the conductor 24 1 、24c 2 A magnetic field with the minimum intensity generated by the measured current Iin is applied to these magnetoresistive elements 51. Type II + (1), II + The blocks of the magnetoresistive element 51 of (2) are located on the arm 24c 1 A magnetic field with the approximate maximum intensity generated by the measured current Iin is applied to these magnetoresistive elements 51. Type II + (1), II + The magnetoresistances of the magnetoresistive elements 51 of (2) vary with respect to the current amounts Iin2, Iin1 (>Iin2) or more of the current amount Iin due to the relatively strong and relatively weak applied bias magnetic fields (referred to as the strong bias magnetic field and the weak bias magnetic field), and magnetic saturation occurs at the current amount Iin3 or more. Type III + (1), III + The blocks of the magnetoresistive element 51 of (2) are located on the arm 24c 1 A magnetic field with the approximate maximum intensity generated by the measured current Iin is applied to these magnetoresistive elements 51. Type III + (1), III + The magnetoresistances of the magnetoresistive elements 51 of (2) vary with respect to the current amount Iin below the current amounts -Iin2, -Iin1 (<-Iin2) due to the application of the strong bias magnetic field and the weak bias magnetic field, and magnetic saturation occurs at the current amount -Iin3 or less.

[0183] Shown in Figure 18B are Figure 18A the characteristics of the change in magnetoresistance ΔR with respect to the current amount Iin presented by each block of the magnetoresistive element 51 and the magnetic sensors 60, 60h (each resistance arm R1 to R4 or R1, R2). Type I + The magnetoresistive element 51 of (1) has the weakest sensitivity with respect to the current amount Iin due to the application of the magnetic field with the minimum intensity generated by the measured current Iin, and magnetic saturation occurs at the current amount Iin3 or more and the current amount -Iin3 or less. Type II + The magnetoresistive element 51 of (1) has the strongest sensitivity with respect to the current amount Iin due to the application of the maximum intensity magnetic field, the magnetoresistance changes at the current amount Iin2 or more, and magnetic saturation occurs at the current amount Iin3 or more. Type II + The magnetoresistive element 51 of (2) has the strongest sensitivity with respect to the current amount Iin due to the application of the maximum intensity magnetic field, the magnetoresistance changes at the current amount Iin1 (<Iin2) or more, and magnetic saturation occurs at the current amount Iin3 or more. Type III +The magnetoresistive element 51 of (1) has the strongest sensitivity with respect to the current amount Iin when a magnetic field of maximum intensity is applied, causes magnetoresistance variation below the current amount -Iin2, and becomes magnetically saturated below the current amount -Iin3. Type III + The magnetoresistive element 51 of (2) has the strongest sensitivity with respect to the current amount Iin when a magnetic field of maximum intensity is applied, causes magnetoresistance variation below the current amount -Iin1 (> -Iin2), and becomes magnetically saturated below the current amount -Iin3.

[0184] The magnetoresistance change ΔR(total) of the magnetic sensors 60, 60h (each resistance arm R1 to R4 or R1, R2) is composed of 5 type I + 、II + (1)、II + (2)、III + (1)、III + (2) of the magnetoresistive element 51 is given in terms of linearity. Therefore, the magnetoresistance change ΔR with respect to the positive measured current Iin increases with the weakest sensitivity (i.e., the smallest slope) in the range of the current amount 0 to Iin1, increases with a medium sensitivity (medium slope) in the range of the current amount Iin1 to Iin2, increases with the strongest sensitivity (the largest slope) in the range of the current amount Iin2 to Iin3, and becomes magnetically saturated above the current amount Iin3. In addition, the magnetoresistance change ΔR with respect to the negative measured current Iin decreases (increases in the negative direction) with the weakest sensitivity (i.e., the smallest slope) in the range of the current amount 0 to -Iin1, decreases (increases in the negative direction) with a medium sensitivity (medium slope) in the range of the current amount -Iin1 to -Iin2, decreases (increases in the negative direction) with the strongest sensitivity (the largest slope) in the range of the current amount -Iin2 to -Iin3, and becomes magnetically saturated below the current amount -Iin3.

[0185] In Figure 19A shows the types and block configurations of the magnetoresistive element 51 exhibiting the characteristics of (b) two-pole symmetry and (3) monotonic increase. In this example, on the upper surface of the substrate 61, 6 blocks of the magnetoresistive element 51 of type I + (1)、I + (2)、II + (1)、II + (2)、III + (1)、III + (2) are arranged. The blocks of the magnetoresistive element 51 of type I + (1)、I + (2) are located between the arms 24c 1 、24c 2 of the conductor 24 respectively between the arms 24c 1On the side and the reference axis L side, medium and minimum intensity magnetic fields generated by the measured current Iin are respectively applied to these magnetoresistive elements 51. Type I + (1), I + (2) The magnetoresistance of the magnetoresistive element 51 varies linearly with the current amount Iin, magnetically saturates respectively above the current amounts Iin1 and Iin2, and also magnetically saturates respectively below the current amounts Iin1 and Iin2. Type II + (1), II + (2) The blocks of the magnetoresistive element 51 are located on the arm 24c 1 and a magnetic field of approximately maximum intensity generated by the measured current Iin is applied to these magnetoresistive elements 51. Type II + (1), II + (2) The magnetoresistance of the magnetoresistive element 51 respectively increases in a substantially step function shape at the current amounts Iin2 and Iin1 (<Iin2) due to being applied with a strong bias magnetic field and a weak bias magnetic field. Type III + (1), III + (2) The blocks of the magnetoresistive element 51 are located on the arm 24c 1 and a magnetic field of approximately maximum intensity generated by the measured current Iin is applied to these magnetoresistive elements 51. Type III + (1), III + (2) The magnetoresistance of the magnetoresistive element 51 respectively decreases (increases in the negative direction) in a substantially step function shape at the current amounts -Iin2 and -Iin1 (> -Iin2) due to being applied with a strong bias magnetic field and a weak bias magnetic field.

[0186] In Figure 19B is shown Figure 19A the characteristics of the change in magnetoresistance ΔR with respect to the current amount Iin presented by each block of the magnetoresistive element 51 and the magnetic sensors 60, 60h (each resistance arm R1 to R4 or R1, R2). Type I + (1), I + (2) The magnetoresistive element 51 respectively has weak and weakest sensitivities with respect to the current amount Iin due to being applied with medium intensity and minimum intensity magnetic fields generated by the measured current Iin, magnetically saturates respectively above the current amounts Iin1 and Iin2, and also magnetically saturates respectively below the current amounts -Iin1 and -Iin2. Type II + (1), II + (2) The magnetoresistive element 51 has the strongest sensitivity with respect to the current amount Iin due to being applied with a magnetic field of maximum intensity, and the magnetoresistance increases in a substantially step function shape and magnetically saturates respectively above the current amounts Iin2 and Iin1 (<Iin2). Type III + (1), III +The magnetoresistive element 51 in (2) has the strongest sensitivity with respect to the current amount Iin when the maximum intensity of the magnetic field is applied, and the magnetoresistance decreases (increases in the negative direction) in a substantially step function manner below the current amounts -Iin2 and -Iin1 (> -Iin2), respectively, and becomes magnetically saturated.

[0187] The magnetoresistance change ΔR(total) of the magnetic sensors 60 and 60h (each of the resistance arms R1 to R4 or R1 and R2) is of six types I + (1), I + (2), II + (1), II + (2), III + (1), III + The linearity and given value of the magnetoresistance of the magnetoresistive element 51 in (2) are thus determined. Accordingly, the magnetoresistance change ΔR increases with a strong sensitivity (i.e., a large slope) in the range of the current amount 0 to Iin1 with respect to the positive measured current Iin, increases in a substantially step function manner at the current amount Iin1, increases with a weak sensitivity (a small slope) in the range of the current amount Iin1 to Iin2, and increases in a substantially step function manner at the current amount Iin2 and becomes magnetically saturated. Further, the magnetoresistance change ΔR decreases (increases in the negative direction) with a strong sensitivity (i.e., a large slope) in the range of the current amount 0 to -Iin1 with respect to the negative measured current Iin, decreases (increases in the negative direction) in a substantially step function manner at the current amount -Iin1, decreases (increases in the negative direction) with a weak sensitivity (a small slope) in the range of the current amount -Iin1 to -Iin2, and decreases (increases in the negative direction) in a substantially step function manner at the current amount -Iin2 and becomes magnetically saturated.

[0188] In Figure 20A are shown the types and block configurations of the magnetoresistive element 51 exhibiting (b) bipolar symmetry and (4) an arbitrary increase characteristic. In this example, on the upper surface of the substrate 61, blocks of the magnetoresistive element 51 of types I + (1), I + (2), II-(1), II-(2), III - (1), III - (2) are arranged respectively. The blocks of the magnetoresistive element 51 of type I + (1), I + (2) are located between the arms 24c 1 and 24c 2 of the conductor 24, respectively, on the side of the arm 24c 1 and on the reference axis L side, and magnetic fields of medium and minimum intensities generated by the measured current Iin are applied to these magnetoresistive elements 51, respectively. The blocks of the magnetoresistive element 51 of type I + (1), I +(2) The magnetoresistance of the magnetoresistive element 51 varies linearly with respect to the current amount Iin, magnetically saturates at current amounts Iin1 and Iin3 or more, and also magnetically saturates at current amounts -Iin1 and -Iin3 or less. Type II - (1), II - (2) The blocks of the magnetoresistive element 51 are located on the arm 24c 1 and a magnetic field of approximately maximum intensity generated by the measured current Iin is applied to these magnetoresistive elements 51. Type II - (1), II - (2) The magnetoresistance of the magnetoresistive element 51 decreases (increases in the negative direction) in a step function manner at current amounts Iin2 and Iin1 (<Iin2) respectively due to the application of a strong bias magnetic field and a weak bias magnetic field. Type III - (1), III - (2) The blocks of the magnetoresistive element 51 are located on the arm 24c 1 and a magnetic field of approximately maximum intensity generated by the measured current Iin is applied to these magnetoresistive elements 51. Type III - (1), III - (2) The magnetoresistance of the magnetoresistive element 51 increases in a step function manner at current amounts -Iin2 and -Iin1 (>-Iin2) respectively due to the application of a strong bias magnetic field and a weak bias magnetic field.

[0189] In Figure 20B it shows Figure 20A the characteristics of the change in magnetoresistance ΔR with respect to the amount of current Iin presented by each block of the magnetoresistive element 51 and the magnetic sensors 60, 60h (each resistance arm R1 to R4 or R1, R2). Type I + (1), I + (2) The magnetoresistive element 51 has weak and weakest sensitivities with respect to the current amount Iin due to the application of magnetic fields of medium and minimum intensities generated by the measured current Iin, magnetically saturates at current amounts Iin1 and Iin3 or more, and also magnetically saturates at current amounts -Iin1 and -Iin3 or less. Type II - (1), II - (2) The magnetoresistive element 51 has the strongest sensitivity with respect to the current amount Iin due to the application of a magnetic field of maximum intensity, and the magnetoresistance decreases (increases in the negative direction) in a step function manner and magnetically saturates at current amounts Iin2 and Iin1 (<Iin2) or more. Type III - (1), III - (2) The magnetoresistive element 51 has the strongest sensitivity with respect to the current amount Iin due to the application of a magnetic field of maximum intensity, and the magnetoresistance increases in a step function manner and magnetically saturates at current amounts -Iin2 and -Iin1 (>-Iin2) or less.

[0190] The magnetoresistance changes ΔR(total) of the magnetic sensors 60, 60h (each of the resistance arms R1 to R4 or R1, R2) are given by six types I + (1), I + (2), II - (1), II - (2), III - (1), III - (2) of the magnetoresistance elements 51 in terms of linearity and given values. Thus, the magnetoresistance change ΔR increases with the strongest sensitivity (i.e., the maximum slope) in the current range of 0 to Iin1 with respect to the positive measured current Iin, decreases stepwise at the current Iin1, increases with a weak sensitivity (small slope) in the current range of Iin1 to Iin2, decreases stepwise at the current Iin2, increases again with a weak sensitivity (small slope) in the current range of Iin2 to Iin3, and saturates magnetically above the current Iin3. Further, the magnetoresistance change ΔR decreases with the strongest sensitivity (i.e., the maximum slope) in the current range of 0 to -Iin1 with respect to the negative measured current Iin (increases in the negative direction), increases stepwise at the current -Iin1, decreases with a weak sensitivity (small slope) in the current range of -Iin1 to -Iin2 (increases in the negative direction), increases stepwise at the current -Iin2, decreases again with a weak sensitivity (small slope) in the current range of -Iin2 to -Iin3 (increases in the negative direction), and saturates magnetically below the current -Iin3.

[0191] It should be noted that in order to reverse the positive and negative of the characteristics of the magnetoresistance change ΔR (i.e., the output voltage Vout) that is symmetric with respect to the two poles (ΔR(Iin) → -ΔR(Iin)), the magnetoresistance elements 51 of types I + , II - , III - are respectively replaced with the magnetoresistance elements 51 of types I - , II + , III + respectively.

[0192] In Figure 21A shows the types and block configurations of the magnetoresistance elements that exhibit the characteristics of (a) single - pole and (1) logarithmic growth. In this example, on the upper surface of the substrate 61, three blocks of the magnetoresistance elements 51 of types II + (1) to II + (3) are arranged in the X - axis direction. Types II + (1) to II +The magnetoresistive elements 51 of (3) are each subjected to equal bias magnetic fields and thus change their magnetoresistance with respect to a positive current amount Iin, and become magnetically saturated at current amounts Iin1, Iin2, Iin3 (Iin1 < Iin2 < Iin3) or more. Type II + The blocks of the magnetoresistive elements 51 of (1) are located on the center line of the arm 24c of the conductor 24 1 and are subjected to the magnetic field of the maximum intensity generated by the measured current Iin flowing through the conductor 24. Type II + The blocks of the magnetoresistive elements 51 of (2) are located on the inner side of the arm 24c 1 and are subjected to the magnetic field of the medium intensity generated by the measured current Iin. Type II + The blocks of the magnetoresistive elements 51 of (3) are located between the arms 24c 1 and 24c 2 and are subjected to the magnetic field of the minimum intensity generated by the measured current Iin.

[0193] In Figure 21B are shown Figure 21A the characteristics of the magnetoresistance change ΔR with respect to the current amount Iin presented by each block of the magnetoresistive elements 51 and the magnetic sensors 60, 60h (each resistance arm R1 to R4 or R1, R2). Type II + The magnetoresistive elements 51 of (1) have the strongest sensitivity with respect to a positive current amount Iin because they are subjected to the magnetic field of the maximum intensity generated by the measured current Iin, change their magnetoresistance at current amounts of zero or more, and become magnetically saturated at current amounts Iin1 or more. Type II + The magnetoresistive elements 51 of (2) have a medium sensitivity with respect to a positive current amount Iin because they are subjected to the magnetic field of the medium intensity, change their magnetoresistance at current amounts of zero or more, and become magnetically saturated at current amounts Iin2 (>Iin1) or more. Type II + The magnetoresistive elements 51 of (3) have the weakest sensitivity with respect to a positive current amount Iin because they are subjected to the magnetic field of the minimum intensity, change their magnetoresistance at current amounts of zero or more, and become magnetically saturated at current amounts Iin3 (>Iin2) or more.

[0194] The magnetoresistance change ΔR(total) of the magnetic sensors 60, 60h (each resistance arm R1 to R4 or R1, R2) is composed of three types II + (1) to II +(3) The linearity and given value of the magnetoresistance of the magnetoresistive element 51 are determined. Thus, the magnetoresistance change ΔR increases with the highest sensitivity (i.e., the largest slope) in the current range of 0 to Iin1 with respect to the positive measured current Iin, increases with a medium sensitivity (medium slope) in the current range of Iin1 to Iin2, increases with the lowest sensitivity (smallest slope) in the current range of Iin2 to Iin3, and reaches magnetic saturation when the current is above Iin3. It should be noted that the magnetoresistance change ΔR is zero with respect to the negative current Iin.

[0195] In Figure 22A the type and block configuration of the magnetoresistive element 51 showing (a) unipolar and (2) exponential growth characteristics are shown. In this example, on the upper surface of the substrate 61, three blocks of the magnetoresistive element 51 of type II + (1) to II + (3) are arranged in the X-axis direction. The block of the magnetoresistive element 51 of type II + (1) is located on the center line of the arm 24c 1 , and the maximum intensity magnetic field generated by the measured current Iin is applied to these magnetoresistive elements 51. The magnetoresistance of the magnetoresistive element 51 of type II + (1) changes when the current is above Iin2 due to the application of a strong bias magnetic field, and reaches magnetic saturation when the current is above Iin3. The block of the magnetoresistive element 51 of type II + (2) is located on the inner side of the arm 24c 1 , and a medium intensity magnetic field generated by the measured current Iin is applied to these magnetoresistive elements 51. The magnetoresistance of the magnetoresistive element 51 of type II + (2) changes when the current is above Iin1 (<Iin2) due to the application of a medium bias magnetic field, and reaches magnetic saturation when the current is above Iin3. The block of the magnetoresistive element 51 of type II + (3) is located between the arms 24c 1 and 24c 2 of the conductor 24, and the minimum intensity magnetic field generated by the measured current Iin is applied to these magnetoresistive elements 51. The magnetoresistance of the magnetoresistive element 51 of type II + (3) changes with respect to the current Iin above zero due to the application of a weak bias magnetic field, and reaches magnetic saturation when the current is above Iin3.

[0196] In Figure 22B it shows Figure 22A the characteristics of the magnetoresistance change ΔR with respect to the current Iin shown by each block of the magnetoresistive element 51 and the magnetic sensors 60, 60h (each resistance arm R1 to R4 or R1, R2). Type II +The magnetoresistive element 51 of (1) has the strongest sensitivity with respect to the current amount Iin when a magnetic field of maximum intensity is applied, causes a magnetoresistance change at a current amount Iin2 or more, and becomes magnetically saturated at a current amount Iin3 or more. Type II + The magnetoresistive element 51 of (2) has a medium sensitivity with respect to the current amount Iin when a magnetic field of medium intensity is applied, causes a magnetoresistance change at a current amount Iin1 (<Iin2) or more, and becomes magnetically saturated at a current amount Iin3 or more. Type II + The magnetoresistive element 51 of (3) has the weakest sensitivity with respect to the current amount Iin when a magnetic field of minimum intensity generated by the measured current Iin is applied, causes a magnetoresistance change at a current amount above zero, and becomes magnetically saturated at a current amount Iin3 or more.

[0197] The magnetoresistance change ΔR(total) of the magnetic sensors 60, 60h (each resistance arm R1 to R4 or R1, R2) is given by the linearity of three magnetoresistive elements 51 of Type II + (1) to II + The linearity of the magnetoresistance of the magnetoresistive element 51 of (3) is given. Therefore, the magnetoresistance change ΔR increases with the weakest sensitivity (i.e., the smallest slope) in the range of the current amount 0 to Iin1 with respect to the positive measured current Iin, increases with a medium sensitivity (medium slope) in the range of the current amount Iin1 to Iin2, increases with the strongest sensitivity (the largest slope) in the range of the current amount Iin2 to Iin3, and becomes magnetically saturated at a current amount Iin3 or more. It should be noted that the magnetoresistance change ΔR is zero with respect to a negative current amount Iin.

[0198] In Figure 23A shows the type and block configuration of the magnetoresistive element 51 exhibiting (a) unipolar and (3) monotonically increasing characteristics. In this example, on the upper surface of the substrate 61, four blocks of the magnetoresistive elements 51 of Type II + (1) to II + (4) are arranged in the X-axis direction. The blocks of the magnetoresistive elements 51 of Type II + (1), II + (2) are located on the arm 24c 1 and a magnetic field of substantially maximum intensity generated by the measured current Iin is applied to these magnetoresistive elements 51. The magnetoresistances of the magnetoresistive elements 51 of Type II + (1), II + (2) increase in a substantially step function manner at the current amounts Iin2 and Iin1 (<Iin2) respectively due to the application of a strong bias magnetic field and a medium bias magnetic field. The blocks of the magnetoresistive elements 51 of Type II + (3), II + (4) are on the arms 24c 1 of the conductor 24, 24c 2are respectively located between the arms 24c 1 on the side and the reference axis L side, and magnetic fields of medium and minimum intensities generated by the measured current Iin are respectively applied to these magnetoresistive elements 51. Type II + (3), II + (4) The magnetoresistance of the magnetoresistive element 51 linearly varies with respect to the current amount Iin above zero because a weak bias magnetic field is applied, and magnetically saturates respectively above the current amounts Iin1 and Iin2.

[0199] In Figure 23B is shown Figure 23A the characteristics of the magnetoresistance change ΔR with respect to the current amount Iin presented by each block of the magnetoresistive element 51 and the magnetic sensors 60, 60h (each resistance arm R1 to R4 or R1, R2). Type II + (1), II + (2) The magnetoresistive element 51 has the strongest sensitivity with respect to the current amount Iin because the maximum intensity magnetic field is applied, and the magnetoresistance increases in a substantially step function manner and magnetically saturates respectively above the current amounts Iin2 and Iin1 (<Iin2). Type II + (3), II + (4) The magnetoresistive elements 51 of (4) have weak and weakest sensitivities with respect to the current amount Iin because magnetic fields of medium intensity and minimum intensity generated by the measured current Iin are respectively applied, the magnetoresistance varies at current amounts above zero, and magnetically saturates respectively above the current amounts Iin1 and Iin2 (>Iin1).

[0200] The magnetoresistance change ΔR(total) of the magnetic sensors 60, 60h (each resistance arm R1 to R4 or R1, R2) is given by the linear sum of the magnetoresistances of 4 type II + (1) to II + (4) magnetoresistive elements 51. Therefore, the magnetoresistance change ΔR increases with a strong sensitivity (i.e., a large slope) in the range of the current amount 0 to Iin1 with respect to the positive measured current Iin, increases in a substantially step function manner at the current amount Iin1, increases with a weak sensitivity (small slope) in the range of the current amount Iin1 to Iin2, and increases in a substantially step function manner and magnetically saturates at the current amount Iin2. It should be noted that the magnetoresistance change ΔR is zero with respect to the negative current amount Iin.

[0201] In Figure 24A is shown the type and block configuration of the magnetoresistive element 51 exhibiting (a) unipolar and (4) arbitrary increase characteristics. In this example, on the upper surface of the substrate 61, type II are arranged in the X-axis direction and respectively configured - (1), II - (2), II + (3), II+ Four blocks of the magnetoresistive element 51 of (4). Type II - (1), II - The blocks of the magnetoresistive element 51 of (2) are located on the arm 24c 1 and a magnetic field of substantially maximum intensity generated by the measured current Iin is applied to these magnetoresistive elements 51. Type II - (1), II - The magnetoresistances of the magnetoresistive elements 51 of (2) decrease (increase in the negative direction) in a step function manner at the current amounts Iin2 and Iin1 (<Iin2) respectively because a strong bias magnetic field and a medium bias magnetic field are applied. Type II + (3), II + The blocks of the magnetoresistive element 51 of (4) are located between the arms 24c 1 and 24c 2 of the conductor 24 on the arm 24c side and the reference axis L side respectively, and a magnetic field of medium and minimum intensity generated by the measured current Iin is applied to these magnetoresistive elements 51 respectively. Type II 1 (3), II + (3), II + The magnetoresistance of the magnetoresistive element 51 of (4) varies linearly with respect to the current amount Iin above zero because a weak bias magnetic field is applied, and magnetically saturates respectively above the current amounts Iin1 and Iin3 (>Iin2>Iin1).

[0202] In Figure 24B is shown Figure 24A the characteristics of the change in magnetoresistance ΔR with respect to the current amount Iin presented by each block of the magnetoresistive element 51 and the magnetic sensors 60, 60h (each resistance arm R1 to R4 or R1, R2). Type II - (1), II - The magnetoresistive element 51 of (2) has the strongest sensitivity with respect to the current amount Iin because a magnetic field of maximum intensity is applied, and the magnetoresistance decreases (increases in the negative direction) in a step function manner respectively above the current amounts Iin2 and Iin1 (<Iin2) and magnetically saturates. Type II + (3), II + The magnetoresistive elements 51 of (3) and (4) have weak and weakest sensitivities with respect to the current amount Iin respectively because a magnetic field of medium intensity and minimum intensity generated by the measured current Iin is applied, vary the magnetoresistance at the current amount above zero, and magnetically saturate respectively above the current amounts Iin1 and Iin3 (>Iin1).

[0203] The change in magnetoresistance ΔR(total) of the magnetic sensors 60, 60h (each resistance arm R1 to R4 or R1, R2) is composed of four Type II - (1), II -(2), II + (3), II + (4) The linearity and given value of the magnetoresistance of the magnetoresistive element 51 are thus determined. Therefore, the magnetoresistance change ΔR with respect to the positive measured current Iin increases with the strongest sensitivity (i.e., the maximum slope) in the current range of 0 to Iin1, decreases stepwise at the current Iin1, increases with a weak sensitivity (small slope) in the current range of Iin1 to Iin2, decreases stepwise at the current Iin2, increases again with a weak sensitivity (small slope) in the current range of Iin2 to Iin3, and reaches magnetic saturation at the current Iin3 and above. It should be noted that the magnetoresistance change ΔR is zero with respect to the negative current Iin.

[0204] It should be noted that in order to reverse the positive and negative of the characteristics of the magnetoresistance change ΔR (i.e., the output voltage Vout) of the above-mentioned (a) unipolar characteristic (ΔR(Iin) → -ΔR(Iin)), the type II - , II + of the magnetoresistive element 51 is replaced with the type II + , II - of the magnetoresistive element 51 respectively.

[0205] It should be noted that in order to reproduce the magnetoresistance change ΔR (i.e., the output voltage Vout) showing the (a) unipolar characteristic with respect to the negative current (ΔR(Iin) → -ΔR(-Iin)), instead of the above-mentioned type II + (or type II - ), the magnetoresistive element 51 of III + (or type III - ) that is also applied with a bias magnetic field is used.

[0206] In Figure 25A , the type and block configuration of the magnetoresistive element 51 showing the (c) bipolar asymmetric and (3) monotonically increasing characteristics are shown. In this example, two blocks of the magnetoresistive element 51 of type II + , III - are arranged and configured on the upper surface of the substrate 61 respectively. The block of the magnetoresistive element 51 of type II + is located on the arm 24c 1 , and a magnetic field with a substantially maximum intensity generated by the measured current Iin is applied to these magnetoresistive elements 51. The magnetoresistance of the magnetoresistive element 51 of type II + varies with respect to the current Iin above zero because a weak bias magnetic field is applied, and magnetic saturation occurs at the current Iin1 and above. The block of the magnetoresistive element 51 of type III - is located on the arm 24c 1 , and is the same as type II +Similarly, a magnetic field of substantially maximum intensity generated by the measured current Iin is applied to these magnetoresistive elements 51. Type III - The magnetoresistance of the magnetoresistive element 51 of type III varies with respect to the current amount Iin below zero because a weak bias magnetic field is applied, and magnetic saturation occurs below the current amount -Iin1.

[0207] In Figure 25B is shown Figure 25A the characteristics of the magnetoresistance change ΔR with respect to the current amount Iin exhibited by each block of the magnetoresistive element 51 and the magnetic sensors 60, 60h (each resistance arm R1 to R4 or R1, R2). Type II + The magnetoresistive element 51 of type III has a strong sensitivity with respect to the current amount Iin because a magnetic field of maximum intensity generated by the measured current Iin is applied, the magnetoresistance varies with respect to the positive current, and magnetic saturation occurs above the current amount Iin1. Type III - The magnetoresistive element 51 of type III has a strong sensitivity with respect to the current amount Iin because a magnetic field of maximum intensity generated by the measured current Iin is applied, the magnetoresistance varies with respect to the negative current, and magnetic saturation occurs below the current amount -Iin1.

[0208] The magnetoresistance change ΔR(total) of the magnetic sensors 60, 60h (each resistance arm R1 to R4 or R1, R2) is given by the linear sum of the magnetoresistances of two magnetoresistive elements 51 of type II + and III - Thus, the magnetoresistance change ΔR increases with a strong sensitivity (i.e., a large slope) with respect to the positive measured current Iin and magnetic saturation occurs above the current amount Iin1. In addition, the magnetoresistance change ΔR increases with a strong sensitivity (i.e., a large slope) with respect to the negative measured current Iin and magnetic saturation occurs below the current amount -Iin3.

[0209] In Figure 26A is shown the type and block configuration of the magnetoresistive element 51 exhibiting the (c) two-pole asymmetry and (3) monotonically increasing characteristics. In this example, on the upper surface of the substrate 61, five blocks of the magnetoresistive elements 51 of type II + (1) to II + (4) and III + are arranged. The blocks of the magnetoresistive elements 51 of type II + (1) and II + (2) are located on the center line of the arm 24c 1 and a magnetic field of maximum intensity generated by the measured current Iin is applied to these magnetoresistive elements 51. Type II + (1) and II +(2) The magnetoresistances of the magnetoresistive elements 51 increase stepwise at the current amounts Iin2 and Iin1 (<Iin2) due to the application of a strong bias magnetic field and a medium bias magnetic field, respectively. Type II + (3), II + (4) The blocks of the magnetoresistive elements 51 are located between the arms 24c of the conductor 24 1 , 24c 2 respectively on the side of the arm 24c 1 side and the reference axis L side, and magnetic fields of medium and minimum intensities generated by the measured current Iin are applied to these magnetoresistive elements 51, respectively. Type II + (3), II + (4) The magnetoresistances of the magnetoresistive elements 51 vary linearly with respect to the current amount Iin above zero due to the application of a weak bias magnetic field, and magnetically saturate at the current amounts Iin1 and Iin2 (>Iin1) or more, respectively. Type III + The blocks of the magnetoresistive elements 51 are located on the center line of the arm 24c 1 and a magnetic field of maximum intensity generated by the measured current Iin is applied to these magnetoresistive elements 51. Type III + The magnetoresistance of the magnetoresistive element 51 decreases stepwise (increases in the negative direction) at the current amount -Iin3 due to the application of a bias magnetic field.

[0210] In Figure 26B is shown Figure 26A the characteristics of the magnetoresistance change ΔR with respect to the current amount Iin exhibited by each block of the magnetoresistive element 51 and the magnetic sensors 60, 60h (each resistance arm R1 to R4 or R1, R2). Type II + (1), II + (2) The magnetoresistive elements 51 have the strongest sensitivity with respect to the current amount Iin due to the application of a magnetic field of maximum intensity, and the magnetoresistance increases stepwise and magnetically saturates at the current amounts Iin2 and Iin1 (<Iin2) or more, respectively. Type II + (3), II + (4) The magnetoresistive elements 51 have weak and the weakest sensitivities with respect to the current amount Iin due to the application of magnetic fields of medium and minimum intensities generated by the measured current Iin, respectively, the magnetoresistance varies at the current amount above zero, and magnetically saturates at the current amounts Iin1 and Iin2 (>Iin1) or more, respectively. Type III + The magnetoresistive element 51 has the strongest sensitivity with respect to the current amount Iin due to the application of a magnetic field of maximum intensity, and the magnetoresistance decreases stepwise (increases in the negative direction) and magnetically saturates below the current amount -Iin3.

[0211] The magnetic resistance change ΔR (total) of the magnetic sensors 60 and 60h (each resistor arm R1 to R4 or R1 and R2) is divided into five types II + (1)~II + (4) III + The linearity and givenness of the magnetic resistance of the magnetic resistance element 51. Therefore, the magnetic resistance change ΔR increases with the strongest sensitivity (i.e., the largest slope) in the range of current 0 to Iin1 with respect to the positive measured current Iin, increases in the form of a step function at the current Iin1, increases with a weak sensitivity (small slope) in the range of current Iin1 to Iin2, increases in the form of a step function at the current Iin2 and reaches magnetic saturation. The magnetic resistance change ΔR is zero in the range of current 0 to -Iin1 with respect to the negative measured current Iin, decreases in the form of a step function (increases in the negative direction) at the current -Iin1 and reaches magnetic saturation.

[0212] It should be noted that in order to reverse the positive and negative characteristics of the above-mentioned (c) bipolar asymmetric magnetic resistance change ΔR (i.e., output voltage Vout) (ΔR(Iin)→-ΔR(Iin)), the type I + ,II + , III + The magnetoresistive elements 51 are replaced by type I - ,II - , III - The magnetoresistive element 51 is sufficient.

[0213] It should be noted that in order to reproduce the magnetic resistance change ΔR (i.e., output voltage Vout) (ΔR(Iin)→-ΔR(-Iin)) showing the bipolar asymmetric characteristic with respect to the negative current (c), the above-mentioned type II + (or Type II - ) and the magnetoresistive element 51 is also applied with a bias magnetic field. + (or Type III - )'s magnetoresistive element 51 is sufficient.

[0214] A method for manufacturing the current sensor 110 will be described.

[0215] like Figure 27A As shown, first, a metal plate is pressed to form a pattern of multiple device terminals 17 and conductors 24. The pattern includes multiple device terminals 17 and conductors 24 in a manner that the terminal portions of the multiple device terminals 17 and conductors 24 are connected to the inside of a rectangular frame (not shown).

[0216] Next, stepped processing is performed on the pattern to provide steps to the plurality of device terminals 17 and the conductors 24. As a result, the inner portion of the pattern is raised relative to the frame and the terminal portions of the plurality of device terminals 17 and the conductors 24 connected to the frame.

[0217] As Figure 27B shown, next, a magnetic sensor 60 is provided. Here, two magnetoelectric conversion portions 62, 63 are respectively disposed on the arms 24c 1 , 24c 2 of the conductor 24.

[0218] As Figure 27C shown, next, the magnetic sensor 60 and the plurality of device terminals 17 are connected by wire bonding.

[0219] As Figure 27D shown, next, the pattern is molded with the remaining frame and the terminal portions of the plurality of device terminals 17 and the conductors 24 connected thereto. As a result, the package 9 is formed, and the magnetic sensor 60 and the inner portion of the pattern are sealed therein.

[0220] Finally, the frame exposed from the package 9 is cut off from the pattern. As a result, the plurality of device terminals 17 and the conductors 24 are separated from each other, and the current sensor 110 is completed.

[0221] The magnetic sensors 60, 60h according to the present embodiment include: a substrate 61 provided on the conductor 24 and having a plurality of blocks disposed on one surface, the plurality of blocks including first blocks 62a, 63a and second blocks 62b, 63b, the first blocks 62a, 63a and the second blocks 62b, 63b being respectively located near and far from the center line of the conductor 24 relative to each other; and a plurality of magnetoresistive elements 51 disposed on the substrate 61, and a part of the plurality of magnetoresistive elements 51 is disposed in the first blocks 62a, 63a, and another part is disposed in the second blocks 62b, 63b. The first blocks 62a, 63a and the second blocks 62b, 63b respectively include first sub-blocks 62a 1 , 63a 1 , 62b 1 , 63b 1 , the first sub-blocks 62a 1 , 63a 1 , 62b 1 , 63b 1 are provided with magnetoresistive elements 51 having the same magnetosensitive direction as each other, and the magnetoresistive elements 51 in the first sub-blocks 62a 1 , 63a 1 in the first blocks 62a, 63a and the magnetoresistive elements 51 in the first sub-blocks 62b 1 , 63b 1 in the second blocks 62b, 63b are connected in series to form a resistance arm R1.

[0222] Thus, the first sub-block 62a of the first pieces 62a and 63a having magnetosensitive directions with the same direction and connected in series to form the resistance arm R1 1 , 63a 1 and the magnetoresistive element 51 in the first sub-block 62b of the second pieces 62b and 63b 1 , 63b 1 of the former among them, are located relatively near the center line of the conductor 24 on one surface of the substrate 61. Thus, they exhibit strong sensitivity with respect to the magnetic field generated by energizing the conductor 24. The latter are located relatively far from the center line of the conductor 24. Thus, they exhibit weak sensitivity with respect to the magnetic field generated by energizing the conductor 24. Thus, it is possible to realize the following magnetic sensors 60 and 60h having multiple linearity with respect to the magnetic field intensity: When the amount of current flowing through the conductor 24 is equal to or less than the amount that generates a magnetic field equal to the saturation magnetic field of the magnetoresistive element 51 at the positions of the first pieces 62a and 63a, the resistance arm R1 exhibits strong linearity having the sum of the sensitivities of the magnetoresistive elements 51 of the first pieces 62a and 63a and the sensitivities of the magnetoresistive elements 51 of the second pieces 62b and 63b. When the amount of current flowing through the conductor 24 is greater than the amount that generates a magnetic field equal to the saturation magnetic field at the positions of the first pieces 62a and 63a and equal to or less than the amount that generates a magnetic field equal to the saturation magnetic field at the positions of the second pieces 62b and 63b, the resistance arm R1 exhibits weak linearity equal to the sensitivity of the magnetoresistive element 51 of the second pieces 62b and 63b.

[0223] The current sensor 110 according to this embodiment includes a conductor 24, magnetic sensors 60 and 60h, and a package 9 that seals the conductor 24 and the magnetic sensors 60. By using the magnetic sensors 60 and 60h, it is possible to construct a current sensor having multiple linearity.

[0224] It should be noted that the magnetic sensor 60 includes two magnetoelectric conversion units 62 and 63, but instead, it may include only one of the magnetoelectric conversion units 62 and 63.

[0225] It should be noted that the magnetic field detection directions (i.e., magnetosensitive directions) of the resistance arms R1 to R8 (magnetoresistive elements 51) included in the two magnetoelectric conversion units 62 and 63 of the magnetic sensor 60 may be set to the vertical direction with respect to the upper surface of the conductor 24, and one of the two magnetoelectric conversion units 62 and 63 may be arranged in the gap region surrounded by the bent portion 24c of the conductor 24. Thus, the magnetic sensor 60 can detect a vertical magnetic field (in this example, Figure 1A the magnetic field in the Z-axis direction). In addition, the other of the two magnetoelectric conversion units 62 and 63 may be arranged near the outer edge of one of the two arms 24c 1 , 24c 2 of the conductor 24. Thus, the interfering magnetic field can be canceled.

[0226] In Figure 28 it, the internal structure of the current sensor 120 related to the modification example is shown in a top view. In addition to the components included in the aforementioned current sensor 110, the current sensor 120 further includes a signal processing circuit 44 that processes the detection signal of the magnetic sensor 60 (for example, the resistance change of the resistance arms R1, etc.) to calculate the amount of the measured current flowing through the conductor 24. The signal processing circuit 44 may also include a built-in memory, a sensitivity correction circuit, a bias correction circuit for correcting the bias of the output, an amplification circuit for amplifying the output signal from the magnetic sensor 60, and a temperature correction circuit for correcting the output according to the temperature. The signal processing circuit 44 is disposed on the substrate 61 of the magnetic sensor 60, and the electrode pads (not shown) on the substrate 61 are used as the input / output terminals of the signal processing circuit 44, and are connected to the plurality of device terminals 17 by wire bonding. Thus, the signal processing circuit 44 outputs the calculation result of the amount of the measured current flowing through the conductor 24 via the plurality of device terminals 17.

[0227] As described above, the present invention has been described using the embodiments, but the technical scope of the present invention is not limited to the scope described in the above embodiments. It is obvious to those skilled in the art that various changes or improvements can be made to the above embodiments. It is obvious from the description of the claims that the embodiments after such changes or improvements can also be included in the technical scope of the present invention.

[0228] It should be noted that the execution order of each process such as actions, processes, steps, and stages in the devices, systems, programs, and methods shown in the claims, the specification, and the drawings can be realized in any order as long as it is not specifically indicated as "before...", "prior to...", etc. and the output of the previous process is not used in the subsequent process. Regarding the operation flow in the claims, the specification, and the drawings, even if it is described using "first", "then", etc. for convenience, it does not mean that it must be implemented in that order.

Claims

1. A magnetic sensor comprising: A substrate is provided on the conductor and has a plurality of blocks arranged on one surface, wherein the plurality of blocks include a first block and a second block, and the first block and the second block are respectively located near and far from a center line of the conductor relative to each other in a plan view; and A plurality of magnetoresistive elements are arranged on the substrate, and a portion of the plurality of magnetoresistive elements are arranged in the first block, and another portion of the plurality of magnetoresistive elements are arranged in the second block, The first block and the second block each include a first sub-block, the first sub-block being provided with magnetoresistive elements having the same magnetic sensitivity direction, the magnetoresistive elements in the first sub-block of the first block and the magnetoresistive elements in the first sub-block of the second block being connected in series to form a first resistance arm.

2. The magnetic sensor according to claim 1, wherein: The first block and the second block each further include a second sub-block, wherein the second sub-block is provided with magnetoresistive elements having the same magnetoresistive direction as each other and having a magnetoresistive direction opposite to that of the magnetoresistive elements in the first sub-block. The magnetoresistive element in the second sub-block of the first block and the magnetoresistive element in the second sub-block of the second block are connected in series to form a second resistance arm, and the first resistance arm and the second resistance arm are connected in series.

3. The magnetic sensor according to claim 2, wherein: The first block and the second block further include a third sub-block and a fourth sub-block, respectively. The third sub-block is configured with magnetoresistive elements having the same magnetoresistive direction as each other and having the same magnetoresistive direction as the magnetoresistive elements in the first sub-block. The fourth sub-block is configured with magnetoresistive elements having the same magnetoresistive direction as each other and having an opposite magnetoresistive direction as the magnetoresistive elements in the first sub-block. The magnetoresistive element in the third sub-block of the first block and the magnetoresistive element in the third sub-block of the second block are connected in series to form a third resistance arm, and the magnetoresistive element in the fourth sub-block of the first block and the magnetoresistive element in the fourth sub-block of the second block are connected in series to form a fourth resistance arm, The third resistance arm and the fourth resistance arm are connected in series with each other and connected in parallel with the first resistance arm and the second resistance arm, and together with the first resistance arm and the second resistance arm, form a Wheatstone bridge circuit.

4. The magnetic sensor according to claim 1, wherein: The plurality of blocks further include at least one expansion block, the at least one expansion block being arranged on one surface of the substrate separately from the first block and the second block, Another portion of the plurality of magnetoresistive elements is disposed within the at least one extension block, The at least one extended block includes a first sub-block, the first sub-block of the at least one extended block is configured with magnetoresistive elements having the same magnetoresistive direction as each other and having the same magnetoresistive direction relative to magnetoresistive elements in the first sub-block of the first block, The first resistance arm includes a magnetoresistive element in the first sub-block of the extension block in a manner connected in series with a magnetoresistive element in the first sub-block of the first block and a magnetoresistive element in the first sub-block of the second block.

5. The magnetic sensor according to claim 4, wherein: The first block, the second block and the at least one extended block each further include a second sub-block, wherein the second sub-block is provided with magnetoresistive elements having the same magnetoresistive direction as each other and having an opposite magnetoresistive direction to the magnetoresistive elements in the first sub-block, The magnetoresistive element in the second sub-block of the first block, the magnetoresistive element in the second sub-block of the second block, and the magnetoresistive element in the second sub-block of the at least one extended block are connected in series to form a second resistance arm, and the first resistance arm and the second resistance arm are connected in series.

6. The magnetic sensor according to claim 5, wherein: The first block, the second block, and the at least one extended block further include a third sub-block and a fourth sub-block, respectively. The third sub-block is configured with magnetoresistive elements having the same magnetoresistive direction as each other and having the same magnetoresistive direction relative to the magnetoresistive elements in the first sub-block. The fourth sub-block is configured with magnetoresistive elements having the same magnetoresistive direction as each other and having an opposite magnetoresistive direction relative to the magnetoresistive elements in the first sub-block. The magnetoresistive elements in the third sub-block of the first block, the magnetoresistive elements in the third sub-block of the second block, and the magnetoresistive elements in the third sub-block of the at least one extended block are connected in series to form a third resistance arm, and the magnetoresistive elements in the fourth sub-block of the first block, the magnetoresistive elements in the fourth sub-block of the second block, and the magnetoresistive elements in the fourth sub-block of the at least one extended block are connected in series to form a fourth resistance arm, The third resistance arm and the fourth resistance arm are connected in series with each other and connected in parallel with the first resistance arm and the second resistance arm, and together with the first resistance arm and the second resistance arm, form a Wheatstone bridge circuit.

7. The magnetic sensor according to claim 1, wherein: At least a portion of the first block is located on the conductor in a plan view, At least a portion of the second block is located outside the conductor in a plan view.

8. The magnetic sensor according to claim 1, wherein: At least a portion of the first block is located on the conductor in a plan view, The second block is located outside the conductor in a plan view.

9. The magnetic sensor according to claim 1, wherein: The first block is located on the conductor in a plan view, At least a portion of the second block is located on the conductor in a plan view.

10. The magnetic sensor according to claim 1, wherein The first block and the second block are arranged in a direction intersecting with a current-carrying direction of the conductor.

11. The magnetic sensor according to claim 1, wherein: The plurality of magnetoresistive elements are tunnel magnetoresistive elements (TMR) or giant magnetoresistive elements (GMR).

12. The magnetic sensor according to claim 10, wherein: At least one of the plurality of magnetoresistive elements has a free layer to which a bias magnetic field is applied.

13. The magnetic sensor according to claim 12, wherein: The bias magnetic field is applied by any one of magnetic coupling of the antiferromagnet to the free layer, magnetic coupling of the stacked ferrimagnetic structure as a three-layer structure of ferromagnet / non-magnet / ferromagnet relative to the free layer as a ferromagnet, configuration of a magnet near the free layer, and configuration of a coil wiring near the free layer.

14. The magnetic sensor according to claim 12, wherein: The magnetoresistive elements configured in at least two of the plurality of blocks have a free layer to which the bias magnetic field is applied, The magnetoresistive elements configured in at least two of the plurality of blocks have free layers to which the bias magnetic field is not applied. Among the plurality of blocks, a block including magnetoresistive elements having free layers to which the bias magnetic field is not applied is arranged farther from the conductor than a block including magnetoresistive elements having free layers to which the bias magnetic field is applied.

15. The magnetic sensor according to claim 1, wherein The conductor has a U-shaped, Japanese kana "コ"-shaped, Greek letter "π"-shaped, or V-shaped shape including two arms that are symmetrical or substantially symmetrical with respect to a reference line. One of the first blocks and one of the second blocks are arranged on each of the two arms symmetrically with respect to the reference line.

16. The magnetic sensor according to claim 7, wherein: The conductor has a U-shaped, Japanese kana "コ"-shaped, Greek letter "π"-shaped, or V-shaped shape including two arms that are symmetrical or substantially symmetrical with respect to a reference line. One of the first blocks and one of the second blocks are arranged on each of the two arms symmetrically with respect to the reference line. The second block is arranged on the reference line side with respect to the first block.

17. The magnetic sensor according to claim 1, wherein: The magnetic sensor further includes a signal processing circuit that is disposed on the substrate and processes a detection signal of a resistance change of the first resistor arm.

18. A current sensor comprising: The magnetic sensor according to any one of claims 1 to 17; and The conductor through which the current to be measured flows.

19. The current sensor according to claim 18, wherein: The conductor includes a first arm, a second arm separated from the first arm in a width direction, and a connecting portion connecting the first arm and the second arm, and The first arm and the second arm extend toward the same side with respect to the connection portion.

Images