Full-band super-high power density electromagnetic pulse protection energy selective surface and communication equipment

Abstract

The application discloses a full-band super-high power density electromagnetic pulse protection energy selection surface and a communication device. The energy selection surface comprises a first dielectric substrate and a second dielectric substrate which are sequentially stacked. The first dielectric substrate and the second dielectric substrate are separated by an air gap layer. The top of the first dielectric substrate is provided with a first metal unit, and the bottom of the second dielectric substrate is provided with a second metal unit. The first metal unit and the second metal unit are both center-symmetric structures. The application realizes adjustable functions, can switch between transmission and shielding states, breaks the limitation of the single function of the frequency selection surface and the limitation of the narrow bandwidth of other energy selection surfaces.

Description

Technical Field

[0001] This invention relates to a full-band ultra-high power density electromagnetic pulse protection energy selective surface and communication equipment, belonging to the fields of wireless communication and metasurface design technology. Background Technology

[0002] With the rapid development of electronic information technology and electromagnetic pulse technology, electronic devices are becoming smaller, more integrated, and operating at higher frequencies, making their electromagnetic susceptibility increasingly prominent. Furthermore, the electromagnetic environment in which electronic devices operate is becoming increasingly complex, facing numerous electromagnetic pulse threats from both natural phenomena and human factors. These threats from natural phenomena include electrostatic discharge and lightning; while those from human factors include nuclear electromagnetic pulses from high-altitude nuclear explosions and high-power microwaves from high-power microwave weapons. Therefore, the development and research of strong electromagnetic pulse protection technologies have significant engineering application value.

[0003] Compared to frequency-selective surfaces, energy-selective surfaces can flexibly switch between transmission and shielding states under electromagnetic wave illumination of different power densities, making them effective in today's complex and ever-changing electromagnetic environments. While ensuring normal signal transmission and reception, they can adaptively switch states to protect against high-power electromagnetic pulses. Furthermore, with the continuous expansion of communication frequency bands, existing energy-selective surfaces still face design challenges in covering ultra-wide communication bands, making it difficult to meet the requirements of modern wireless communication systems. Summary of the Invention

[0004] The purpose of this invention is to overcome the shortcomings and deficiencies of the prior art and provide a full-band ultra-high power density electromagnetic pulse protection energy selective surface. This energy selective surface is functionally adjustable and can switch between transmission and shielding states. It breaks the limitation of single function of frequency selective surfaces and the narrow bandwidth limitation of other energy selective surfaces. When low power energy is incident, it has the advantages of low insertion loss, ultra-wide passband, and transmission bandwidth covering 0-18GHz, which far exceeds the advantages of existing energy selective surfaces. When high power energy is incident, it has the advantages of high shielding efficiency, ultra-wide stopband, and shielding bandwidth covering 0-18GHz, which is superior to existing energy selective surfaces.

[0005] Another object of the present invention is to provide a communication device comprising the above-described energy selective surface.

[0006] The objective of this invention can be achieved by adopting the following technical solutions:

[0007] A full-band ultra-high power density electromagnetic pulse protection energy selective surface includes a first dielectric substrate and a second dielectric substrate stacked sequentially, separated by an air gap layer. A first metal unit is disposed on the top of the first dielectric substrate, and a second metal unit is disposed on the bottom of the second dielectric substrate. Both the first metal unit and the second metal unit have a centrally symmetrical structure.

[0008] Furthermore, the first metal unit includes a first rectangular metal patch and four second rectangular metal patches. The first rectangular metal patch is located at the center of the first dielectric substrate, and the four second rectangular metal patches are located on the four sides of the first dielectric substrate. A first welding gap is provided between each second rectangular metal patch and the first rectangular metal patch, and a first diode is welded to each first welding gap.

[0009] Furthermore, both the first rectangular metal patch and the second rectangular metal patch are chamfered rectangular metal patches.

[0010] Furthermore, the size of the first rectangular metal patch is larger than the size of each of the second rectangular metal patches.

[0011] Furthermore, the second metal unit includes a third rectangular metal patch and four fourth rectangular metal patches. The third rectangular metal patch is located at the center of the second dielectric substrate, and the four fourth rectangular metal patches are located on the four sides of the second dielectric substrate. A second welding gap is provided between each fourth rectangular metal patch and the third rectangular metal patch, and a second diode is welded to each second welding gap.

[0012] Furthermore, both the third and fourth rectangular metal patches are chamfered rectangular metal patches.

[0013] Furthermore, the size of the third rectangular metal patch is larger than the size of each fourth rectangular metal patch.

[0014] Furthermore, the thickness of the first dielectric substrate and the second dielectric substrate is 0.5 mm to 0.52 mm.

[0015] Furthermore, the thickness of the air gap layer is 1.8mm to 2.2mm.

[0016] Another objective of this invention can be achieved by adopting the following technical solution:

[0017] A communication device comprising at least one of the aforementioned full-band ultra-high power density electromagnetic pulse protection energy selective surfaces.

[0018] The present invention has the following advantages over the prior art:

[0019] 1. This invention achieves the advantages of having an ultra-wide transmission bandwidth and ultra-low insertion loss when the energy selective surface is irradiated by a low-power signal, and having an ultra-wide stopband and ultra-high shielding efficiency when high-power microwaves (HPM) are incident.

[0020] 2. The present invention has the following advantages: when low power energy is incident, the diode is cut off, and the insertion loss is less than 1dB in the range of 0-18 GHz; when high power energy is incident, the diode is turned on, and the shielding efficiency is greater than 20dB in the range of 0-18 GHz. It has advantages such as ultra-low insertion loss, ultra-high shielding efficiency, ultra-wide passband, and ultra-wide stopband. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0022] Figure 1 This is a schematic diagram of the structure of the full-band ultra-high power density electromagnetic pulse protection energy selective surface according to an embodiment of the present invention.

[0023] Figure 2 This is a schematic diagram of the first metal unit structure of the full-band ultra-high power density electromagnetic pulse protection energy selective surface according to an embodiment of the present invention.

[0024] Figure 3 This is a schematic diagram of the second metal unit structure of the full-band ultra-high power density electromagnetic pulse protection energy selective surface according to an embodiment of the present invention.

[0025] Figure 4 The transmission coefficient curves of the full-band ultra-high power density electromagnetic pulse protection energy selective surface in the embodiments of the present invention under low power transmission and high power protection states are shown.

[0026] Wherein, 100-first dielectric substrate, 101-first metal unit, 102-first rectangular metal patch, 103-second rectangular metal patch, 104-first diode, 200-second dielectric substrate, 201-second metal unit, 202-third rectangular metal patch, 203-fourth rectangular metal patch, 204-second diode. Detailed Implementation

[0027] To facilitate a clear description of the technical solutions in the embodiments of the present invention, the terms "first" and "second" are used to distinguish identical or similar items with essentially the same function and effect. For example, the first threshold and the second threshold are merely used to distinguish different thresholds and do not limit their order. Those skilled in the art will understand that the terms "first" and "second" do not limit the quantity or execution order, and that the terms "first" and "second" are not necessarily different.

[0028] It should be noted that in the embodiments of the present invention, the words "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in the present invention should not be construed as being more preferred or advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.

[0029] In embodiments of the present invention, "at least one" refers to one or more, and "more than one" refers to two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, and c can represent: a, b, c, a combination of a and b, a combination of a and c, a combination of b and c, or a combination of a, b, and c, where a, b, and c can be single or multiple.

[0030] Example:

[0031] like Figure 1 As shown, this embodiment provides a full-band ultra-high power density electromagnetic pulse protection energy selective surface. This energy selective surface is applied to various communication devices. It includes a first dielectric substrate 100 and a second dielectric substrate 200 stacked in sequence. The first dielectric substrate 100 and the second dielectric substrate 200 are separated by an air gap layer 300. A first metal unit 101 is provided on the top of the first dielectric substrate 100, and a second metal unit 201 is provided on the bottom of the second dielectric substrate 200. Both the first metal unit 101 and the second metal unit 201 have a centrally symmetrical structure.

[0032] like Figures 1-2As shown, the first metal unit 101 includes a first rectangular metal patch 102 and four second rectangular metal patches 103. The first rectangular metal patch 102 is located at the center of the first dielectric substrate 100, and the four second rectangular metal patches 103 are located on the four sides (top and bottom, left and right sides) of the first dielectric substrate 100. Each second rectangular metal patch 103 is provided with a first welding gap between it and the first rectangular metal patch 102, that is, there are four first welding gaps in total. Each first welding gap is used to weld a first diode 104.

[0033] Furthermore, both the first rectangular metal patch 102 and the second rectangular metal patch 103 are chamfered rectangular metal patches. Using chamfered rectangular metal patches can reduce the capacitance of the first weld gap and optimize the passband characteristics. The size of the first rectangular metal patch 102 is larger than the size of each of the second rectangular metal patches 103.

[0034] like Figures 1-3 As shown, the structure of the second metal unit 201 is the same as that of the first metal unit 101. It includes a third rectangular metal patch 202 and four fourth rectangular metal patches 203. The third rectangular metal patch 202 is located at the center of the second dielectric substrate 200, and the four fourth rectangular metal patches 203 are located on the four sides of the second dielectric substrate 200 (the top and bottom sides, the left and right sides). A second welding gap is provided between each fourth rectangular metal patch and the third rectangular metal patch, that is, there are four second welding gaps in total. A second diode 204 is welded to each second welding gap.

[0035] Furthermore, both the third rectangular metal patch 202 and the fourth rectangular metal patch 203 are chamfered rectangular metal patches. Using chamfered rectangular metal patches can reduce the capacitance of the second weld gap and optimize the passband characteristics. The size of the third rectangular metal patch 202 is larger than the size of each of the fourth rectangular metal patches 203.

[0036] In this embodiment, the thickness of the first dielectric substrate 100 and the second dielectric substrate 200 is 0.508 mm; the thickness of the air gap layer 300 is 2 mm; and both the first diode 104 and the second diode 204 are PIN diodes.

[0037] like Figure 4 The figure shows the transmission coefficient curves of the full-band ultra-high power density electromagnetic pulse protection energy selective surface of this embodiment under low power transmission and high power protection states. When low power energy is incident, the diode is cut off, and the insertion loss is less than 1dB in the 0-18 GHz range. When high power energy is incident, the diode is turned on, and the shielding efficiency is greater than 20dB in the 0-18 GHz range. It can be seen that this energy selective surface has the advantages of ultra-low insertion loss, ultra-high shielding efficiency, ultra-wide passband, and ultra-wide stopband.

[0038] In summary, the energy selective surface of this invention achieves adjustable functionality, switching between transmission and shielding states. It breaks the limitations of single-function frequency selective surfaces and the narrow bandwidth limitations of other energy selective surfaces. When low power energy is incident, it has the advantages of low insertion loss, ultra-wide passband, and transmission bandwidth covering 0-18GHz, far exceeding existing energy selective surfaces. When high power energy is incident, it has the advantages of high shielding efficiency, ultra-wide stopband, and shielding bandwidth covering 0-18GHz, which is superior to existing energy selective surfaces.

[0039] Although the invention has been described herein with reference to embodiments, those skilled in the art will understand and implement other variations of the disclosed embodiments by reviewing the accompanying drawings, disclosure, and other materials. In this specification, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude multiple components. A single processor or other unit can implement several functions listed in the specification. While certain measures are described in different embodiments, this does not mean that these measures cannot be combined to produce good results.

[0040] Although the invention has been described in conjunction with specific features and embodiments, it is obvious that various modifications and combinations can be made therein without departing from the spirit and scope of the invention. Accordingly, this specification and drawings are merely illustrative of the invention and are considered to cover any and all modifications, variations, combinations, or equivalents within the scope of the invention. Clearly, those skilled in the art can make various alterations and modifications to the invention without departing from its spirit and scope. Thus, if such modifications and modifications fall within the scope of the invention and its equivalents, the invention is also intended to include such modifications and modifications.

Claims

1. A full-band ultra-high power density electromagnetic pulse protection energy selective surface, characterized in that, The device includes a first dielectric substrate and a second dielectric substrate stacked sequentially, separated by an air gap layer. The thickness of the first dielectric substrate and the second dielectric substrate is 0.508 mm, and the thickness of the air gap layer is 2 mm. A first metal unit is disposed on the top of the first dielectric substrate, and a second metal unit is disposed on the bottom of the second dielectric substrate. Both the first metal unit and the second metal unit have a centrally symmetrical structure. The first metal unit includes a first rectangular metal patch and four second rectangular metal patches. The first rectangular metal patch is located at the center of the first dielectric substrate, and the four second rectangular metal patches are located on the four sides of the first dielectric substrate. A first welding gap is provided between each second rectangular metal patch and the first rectangular metal patch, and a first diode is welded to each first welding gap. The first rectangular metal patch and the second rectangular metal patch are both chamfered rectangular metal patches. The second metal unit includes a third rectangular metal patch and four fourth rectangular metal patches. The third rectangular metal patch is located at the center of the second dielectric substrate, and the four fourth rectangular metal patches are located on the four sides of the second dielectric substrate. A second welding gap is provided between each fourth rectangular metal patch and the third rectangular metal patch, and a second diode is welded to each second welding gap. The third rectangular metal patch and the fourth rectangular metal patches are both chamfered rectangular metal patches.

2. The full-band ultra-high power density electromagnetic pulse protection energy selective surface according to claim 1, characterized in that, The size of the first rectangular metal patch is larger than the size of each second rectangular metal patch.

3. The full-band ultra-high power density electromagnetic pulse protection energy selective surface according to claim 1, characterized in that, The size of the third rectangular metal patch is larger than the size of each fourth rectangular metal patch.

4. A communication device, characterized in that, It includes at least one full-band ultra-high power density electromagnetic pulse protection energy selective surface as described in any one of claims 1-3.

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