Semiconductor green laser element

Abstract

The invention discloses a semiconductor green laser element which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, and a topological phonon transition layer is arranged between the upper waveguide layer and the upper limiting layer. The topological phonon transition layer comprises a first topological phonon transition layer, a second topological phonon transition layer and a third topological phonon transition layer. Cooperative regulation of phonon transport is realized, phonon scattering of the laser element is reduced, lattice thermal conductivity is enhanced, thermoelectric performance of the laser element is improved, heat dissipation performance of the laser element is improved, heat accumulation of the active layer is reduced, temperature of the active layer is reduced, hole injection barrier is reduced, and hole injection efficiency is improved. The overlapping probability of the electron hole wave function of the active layer is improved, so that the aging light attenuation, the aging life and the reliability of the laser element under the conditions of high power and large current are improved, and the lasing power and the slope efficiency of the laser element are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and particularly to a semiconductor green laser element. Background Art

[0002] Lasers are widely used in the fields of laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage, etc. There are many types of lasers, and the classification methods are also diverse. There are mainly solid, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small volume, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes.

[0004] 1) Laser is generated by stimulated emission of carriers, with a relatively small spectral full width at half maximum, very high brightness, and the output power of a single laser can be in the W level, while the nitride semiconductor light-emitting diode is spontaneous emission, and the output power of a single light-emitting diode is in the mW level.

[0005] 2) The operating current density of the laser reaches KA / cm 2 2, which is more than two orders of magnitude higher than that of the nitride light-emitting diode, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, and more serious electron-hole mismatch, leading to a more serious efficiency droop effect.

[0006] 3) The light-emitting diode undergoes spontaneous transition radiation, which is incoherent light that transitions from a high energy level to a low energy level without external influence, while the laser is stimulated transition radiation, and the induced photon energy should be equal to the energy difference between the electron transitions, generating completely identical coherent light of photons and induced photons.

[0007] 4) Different principles: The light-emitting diode undergoes radiative recombination and emits light when electrons and holes transition to the quantum well or p-n junction under the action of an external voltage, while the laser can only lasing when the lasing conditions are met. It must satisfy the inverted distribution of carriers in the active region. The stimulated radiation light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. When the threshold condition is met, the gain is greater than the loss, and finally, laser light is output.

[0008] The nitride semiconductor laser has the following problems:

[0009] 1) The large lattice mismatch and large strain inside cause a strong polarization effect, and the strong QCSE (Quantum Confined Stark Effect) severely limits the improvement of the electrical lasing gain of the laser.

[0010] 2) Problems such as the quantum well polarization electric field caused by lattice mismatch and thermal mismatch enhancing the hole injection barrier and the hole overflowing from the active layer, uneven hole injection and low efficiency, result in serious asymmetry and mismatch between electrons and holes in the quantum well, electron leakage and carrier delocalization. It is more difficult for holes to transport in the quantum well, carrier injection is uneven, gain is uneven. At the same time, the gain spectrum of the laser broadens and the peak gain decreases, leading to an increase in the threshold current of the laser and a decrease in the slope efficiency;

[0011] 3) There are a large amount of heat generated by non-radiative recombination loss and free carrier absorption in the active region of the laser chip. At the same time, the epitaxial and chip materials have resistance, which will generate Joule heat loss and carrier absorption loss under current injection, and the chip material has low thermal conductivity and poor heat dissipation performance, resulting in an increase in the temperature of the active layer, and problems such as red shift of the lasing wavelength, decrease in quantum efficiency, decrease in power, increase in threshold current, shortening of life, and deterioration of reliability. Summary of the Invention

[0012] The present invention proposes a semiconductor green laser element, which realizes the collaborative regulation of phonon transport, reduces phonon scattering of the laser element, enhances the lattice thermal conductivity, improves the thermoelectric performance of the laser element, enhances the heat dissipation performance of the laser element, reduces the heat accumulation in the active layer, lowers the temperature of the active layer, and reduces the hole injection barrier and improves the hole injection efficiency, and enhances the overlap probability of the electron-hole wave functions in the active layer, thereby strengthening the laser element to operate at high power, improving the aging optical attenuation, aging life and reliability under high current conditions, reducing the excitation threshold of the laser element, enhancing the confinement factor, and increasing the lasing power and slope efficiency of the laser element.

[0013] A semiconductor green laser element provided by the present invention sequentially includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer from bottom to top. There is a topological phonon transition layer between the upper waveguide layer and the upper confinement layer.

[0014] The topological phonon transition layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 、BN, diamond;

[0015] The topological phonon transition layer includes a first topological phonon transition layer, a second topological phonon transition layer, and a third topological phonon transition layer.

[0016] Preferably, the polarization optical phonon energy distribution of the first topological phonon transition layer has a function y = A + B*x 2 / e x curve distribution, the polarization optical phonon energy distribution of the second topological phonon transition layer has a function y = C + D*log a x (0 < a < 1) curve distribution, and the polarization optical phonon energy distribution of the third topological phonon transition layer has a function y = E + F*e x cosx third quadrant curve distribution; the polarization optical phonon energy of the first topological phonon transition layer is d, the polarization optical phonon energy of the second topological phonon transition layer is e, and the polarization optical phonon energy of the third topological phonon transition layer is f, where: 20 ≤ e ≤ d ≤ f ≤ 500 (meV).

[0017] Preferably, the electron mobility distribution of the first topological phonon transition layer has a function y = G + H*lnx / e x curve distribution, the electron mobility distribution of the second topological phonon transition layer has a function y = I + J*log b x (b > 1) curve distribution, and the electron mobility distribution of the third topological phonon transition layer has a function y = K + L*e x / x 2 second quadrant curve distribution; the electron mobility of the first topological phonon transition layer is g, the electron mobility of the second topological phonon transition layer is h, and the electron mobility of the third topological phonon transition layer is i, where: 10 ≤ i ≤ h ≤ g ≤ 10000 (cm 2 / Vsec).

[0018] Preferably, the longitudinal phonon rate distribution of the first topological phonon transition layer has a function y = M + N*(e x +e -x ) / (e x -e -x ) first quadrant curve distribution, the longitudinal phonon rate distribution of the second topological phonon transition layer has a function y = O + P*log b x (b > 1) curve distribution, and the longitudinal phonon rate distribution of the third topological phonon transition layer has a function y = Q + R*e x x 2 curve distribution; the longitudinal phonon rate of the first topological phonon transition layer is j, the longitudinal phonon rate of the second topological phonon transition layer is k, and the longitudinal phonon rate of the third topological phonon transition layer is l, where: 5E4 ≤ j ≤ l ≤ k ≤ 5E6 (cm / s).

[0019] Preferably, the transverse phonon rate distribution of the first topological phonon transition layer has a first and fourth quadrant curve distribution of the function y = S + T * cosx / x, and the transverse phonon rate distribution of the second topological phonon transition layer has a curve distribution of the function y = U * V * log a x (0 < a < 1), and the transverse phonon rate distribution of the third topological phonon transition layer has a third quadrant curve distribution of the function y = W + Z * (e x + e -x ) / (e x - e -x ); the transverse phonon rate of the first topological phonon transition layer is m, the transverse phonon rate of the second topological phonon transition layer is n, and the transverse phonon rate of the third topological phonon transition layer is p, where: 5E4 ≤ m ≤ p ≤ n ≤ 5E6 (cm / s).

[0020] Preferably, the In / C element ratio distribution of the first topological phonon transition layer has a curve distribution of the function y = A2 + B2 * lnx / x; the Al / C element ratio distribution of the second topological phonon transition layer has a curve distribution of the function y = C2 + D2 * log a x (0 < a < 1); the Al / C element ratio distribution of the third topological phonon transition layer has a third quadrant curve distribution of the function y = E2 + F2 * (e x + e -x ) / (e x - e -x ).

[0021] Preferably, the In / H element ratio distribution of the first topological phonon transition layer has a curve distribution of the function y = G2 + H2 * lnx / e x ; the Al / H element ratio distribution of the second topological phonon transition layer has a curve distribution of the function y = H2 + J2 * log a x (0 < a < 1); the Al / H element ratio distribution of the third topological phonon transition layer has a third quadrant curve distribution of the function y = K2 + L2 * e x / cosx.

[0022] Preferably, the active layer is a periodic structure composed of well layers and barrier layers, the number of periods is 3 ≥ m ≥ 1, and the well layers are GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2O 3 One or any combination of BN and diamond, with a thickness of 10 to 100 angstroms, and the stacked layers are GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 One or any combination of BN and diamond, with a thickness of 10 to 200 angstroms.

[0023] Preferably, the lower confinement layer, the lower waveguide layer, the upper waveguide layer, and the upper confinement layer are GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 One or any combination of BN and diamond.

[0024] Preferably, the substrate includes sapphire, silicon, Ge, SiC, Mo, CuW, TiW, Cu, diamond, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO 2 Composite substrate, sapphire / AlN composite substrate, sapphire / SiN x 、sapphire / SiO 2 / SiN x Composite substrate, magnesium aluminate spinel MgAl 2 O 4 、MgO, ZnO, ZrB 2 、LiAlO 2 and LiGaO 2 Any one of the composite substrates.

[0025] Compared with the prior art, a semiconductor green laser element provided by an embodiment of the present invention has the beneficial effects that:

[0026] 1. The specific polarization optical phonon energy distribution and specific electron mobility distribution of the topological phonon transition layer introduce a new periodic potential field, forming a conversion from hyperbolic dispersion to elliptical dispersion, regulating the topological phonon transition, enhancing the charge accumulation in the valley spin space and the valley degree of freedom accumulation, improving the carrier scattering, reducing the hole injection barrier and enhancing the hole injection efficiency, increasing the overlap probability of the electron-hole wave functions in the active layer, achieving the collaborative regulation of phonon transport, reducing the phonon scattering of the laser element, thereby enhancing the lattice thermal conductivity, improving the thermoelectric performance of the laser element, enhancing the heat dissipation performance of the laser element, and enhancing the quantum efficiency, reducing the threshold current, and improving the spot output and beam quality factor.

[0027] 2. The specific longitudinal phonon rate distribution and specific transverse phonon rate distribution of the topological phonon transition layer regulate the topological phonon transition, enhance the lattice thermal conductivity, reduce the heat accumulation in the active layer, lower the temperature of the active layer, reduce the quantum-confined Stark effect caused by the thermal mismatch in the active layer, reduce the non-radiative recombination loss and the large amount of heat generated by free carrier absorption, reduce the Joule heat loss and carrier absorption loss, enhance the heat dissipation performance of the laser, thereby strengthening the laser element to operate at high power, improving the aging optical attenuation, aging life and reliability under high current conditions, reducing the excitation threshold of the laser element, enhancing the confinement factor, and enhancing the lasing power and slope efficiency of the laser element.

[0028] 3. The specific element ratio distribution of the topological phonon transition layer further enhances the new periodic potential field, regulates the topological phonon transition, enhances the charge accumulation in the valley spin space and the valley degree of freedom accumulation, improves the carrier scattering, achieves the collaborative regulation of phonon transport, reduces the phonon scattering of the laser element, enhances the lattice thermal conductivity, improves the thermoelectric performance of the laser element, enhances the heat dissipation performance of the laser element, reduces the heat accumulation in the active layer, lowers the temperature of the active layer, reduces the hole injection barrier and enhances the hole injection efficiency, increases the overlap probability of the electron-hole wave functions in the active layer, thereby strengthening the laser element to operate at high power, improving the aging optical attenuation, aging life and reliability under high current conditions, reducing the excitation threshold of the laser element, enhancing the confinement factor, and enhancing the lasing power and slope efficiency of the laser element. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 FIG. [X] is a schematic structural diagram of a semiconductor green laser element provided by the present invention.

[0030] Figure 2 FIG. [Y] is a secondary ion mass spectrometry (SIMS) diagram of a semiconductor green laser element provided by the present invention.

[0031] Labels in the figure: 100: Substrate; 101: Lower confinement layer; 102: Lower waveguide layer; 103: Active layer; 104: Upper waveguide layer; 105: Upper confinement layer; 106: Topological phonon transition layer; 106a: First topological phonon transition layer; 106b: Second topological phonon transition layer; 106c: Third topological phonon transition layer. Detailed implementation mode

[0032] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0033] In order to solve the above problems, a semiconductor green laser element provided in the embodiments of the present application will be introduced and described in detail through the following specific embodiments.

[0034] Referring to Figure 1-2 , a semiconductor green laser element provided by the present invention sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105 from bottom to top. There is a topological phonon transition layer 106 between the upper waveguide layer 104 and the upper confinement layer 105.

[0035] The topological phonon transition layer 106 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond;

[0036] The topological phonon transition layer 106 includes a first topological phonon transition layer 106a, a second topological phonon transition layer 106b, and a third topological phonon transition layer 106c.

[0037] The polarization optical phonon energy distribution of the first topological phonon transition layer 106a has a function y = A + B * x 2 / e x curve distribution, and the polarization optical phonon energy distribution of the second topological phonon transition layer 106b has a function y = C + D * loga a curve distribution of x (0 < a < 1), and the polarization optical phonon energy distribution of the third topological phonon transition layer 106c has a function y = E + F * e x a curve distribution in the third quadrant of cosx; the polarization optical phonon energy of the first topological phonon transition layer 106a is d, the polarization optical phonon energy of the second topological phonon transition layer 106b is e, and the polarization optical phonon energy of the third topological phonon transition layer 106c is f, where: 20 ≤ e ≤ d ≤ f ≤ 500 (meV).

[0038] The electron mobility distribution of the first topological phonon transition layer 106a has a function y = G + H * lnx / e x a curve distribution, the electron mobility distribution of the second topological phonon transition layer 106b has a function y = I + J * log b a curve distribution of x (b > 1), and the electron mobility distribution of the third topological phonon transition layer 106c has a function y = K + L * e x / x 2 a curve distribution in the second quadrant; the electron mobility of the first topological phonon transition layer 106a is g, the electron mobility of the second topological phonon transition layer 106b is h, and the electron mobility of the third topological phonon transition layer 106c is i, where: 10 ≤ i ≤ h ≤ g ≤ 10000 (cm 2 / Vsec).

[0039] It can be seen that the specific polarization optical phonon energy distribution and specific electron mobility distribution of the topological phonon transition layer 106 introduce a new periodic potential field, forming a conversion from hyperbolic dispersion to elliptical dispersion, regulating the topological phonon transition, enhancing the charge accumulation in the valley spin space and the valley degree of freedom accumulation, improving the carrier scattering, reducing the hole injection barrier and improving the hole injection efficiency, increasing the overlap probability of the electron-hole wave functions in the active layer 103, realizing the coordinated regulation of phonon transport, reducing the phonon scattering of the laser element, thereby enhancing the lattice thermal conductivity, improving the thermoelectric performance of the laser element, improving the heat dissipation performance of the laser element, improving the quantum efficiency, reducing the threshold current and improving the spot output and beam quality factor.

[0040] The longitudinal phonon rate distribution of the first topological phonon transition layer 106a has a function y = M + N * (e x + e -x ) / (e x - e -x ) a curve distribution in the first quadrant, the longitudinal phonon rate distribution of the second topological phonon transition layer 106b has a function y = O + P * log b x (b > 1) curve distribution, and the longitudinal phonon rate distribution of the third topological phonon transition layer 106c has a function y = Q + R * e x x 2Curved distribution; the longitudinal phonon rate of the first topological phonon transition layer 106a is j, the longitudinal phonon rate of the second topological phonon transition layer 106b is k, and the longitudinal phonon rate of the third topological phonon transition layer 106c is l, where: 5E4 ≤ j ≤ l ≤ k ≤ 5E6 (cm / s).

[0041] The transverse phonon rate distribution of the first topological phonon transition layer 106a has a curve distribution of the function y = S + T * cosx / x in the first and fourth quadrants. The transverse phonon rate distribution of the second topological phonon transition layer 106b has a curve distribution of the function y = U * V * log a x (0 < a < 1). The transverse phonon rate distribution of the third topological phonon transition layer 106c has a curve distribution of the function y = W + Z * (e x + e -x ) / (e x - e -x ) in the third quadrant. The transverse phonon rate of the first topological phonon transition layer 106a is m, the transverse phonon rate of the second topological phonon transition layer 106b is n, and the transverse phonon rate of the third topological phonon transition layer 106c is p, where: 5E4 ≤ m ≤ p ≤ n ≤ 5E6 (cm / s).

[0042] It can be seen that the specific longitudinal phonon rate distribution and the specific transverse phonon rate distribution of the topological phonon transition layer 106 regulate the topological phonon transition, enhance the lattice thermal conductivity, reduce the heat accumulation in the active layer, lower the temperature of the active layer 103, reduce the quantum-confined Stark effect caused by the thermal mismatch of the active layer 103, reduce the non-radiative recombination loss and the large amount of heat generated by free carrier absorption, reduce the Joule heat loss and the carrier absorption loss, improve the heat dissipation performance of the laser, thereby enhancing the laser component to operate at high power, improving the aging optical attenuation, aging life and reliability under high current conditions, reducing the excitation threshold of the laser component, enhancing the confinement factor, and increasing the lasing power and slope efficiency of the laser component.

[0043] The In / C element ratio distribution of the first topological phonon transition layer 106a has a curve distribution of the function y = A2 + B2 * lnx / x. The Al / C element ratio distribution of the second topological phonon transition layer 106b has a curve distribution of the function y = C2 + D2 * log a x (0 < a < 1). The Al / C element ratio distribution of the third topological phonon transition layer 106c has a curve distribution of the function y = E2 + F2 * (e x + e -x ) / (e x - e -x ) in the third quadrant.

[0044] The In / H element ratio distribution of the first topological phonon transition layer 106a has a function y = G2 + H2 * lnx / e x curve distribution; the Al / H element ratio distribution of the second topological phonon transition layer 106b has a function y = H2 + J2 * log a x(0 < a < 1) curve distribution; the Al / H element ratio distribution of the third topological phonon transition layer 106c has a function y = K2 + L2 * e x / cosx third quadrant curve distribution.

[0045] It can be seen that the specific element ratio distribution of the topological phonon transition layer 106 further enhances the new periodic potential field, regulates the topological phonon transition, enhances the charge accumulation and valley degree of freedom accumulation in the valley spin space, improves the carrier scattering, realizes the collaborative regulation of phonon transport, reduces the phonon scattering of the laser element, enhances the lattice thermal conductivity, improves the thermoelectric performance of the laser element, improves the heat dissipation performance of the laser element, reduces the heat accumulation in the active layer 103, reduces the temperature of the active layer, reduces the hole injection barrier and improves the hole injection efficiency, and improves the overlap probability of the electron-hole wave functions in the active layer, thereby strengthening the laser element to operate at high power, improving the aging optical attenuation, aging life and reliability under high current conditions, reducing the excitation threshold of the laser element, enhancing the confinement factor, and improving the lasing power and slope efficiency of the laser element.

[0046] Specifically, as shown in the following table, compare the data of the traditional laser and the laser of the present invention.

[0047] Blue Laser - Project Conventional Laser Laser of the Present Invention Amplitude of Change <![CDATA[Beam quality factor M 2 > 3.7 2.14 73％ Slope Efficiency (W / A) 0.8 1.37 71％ <![CDATA[Threshold current density (kA / cm 2 )]]> 2.4 0.79 -67％ Optical Power (W) 4.1 6.8 66％ Optical Power Decay after 1000H Aging 22％ 3.50％ -84％

[0048] In the present invention, the active layer 103 is a periodic structure composed of well layers and barrier layers, the number of periods is 3 ≥ m ≥ 1, and the well layers are GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3, any one or any combination of BN and diamond, with a thickness of 10 to 100 angstroms, and the stacked layers being GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , any one or any combination of BN and diamond, with a thickness of 10 to 200 angstroms.

[0049] In the present invention, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , any one or any combination of BN and diamond.

[0050] In the present invention, the substrate 100 includes sapphire, silicon, Ge, SiC, Mo, CuW, TiW, Cu, diamond, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO 2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , sapphire / SiO 2 / SiN x composite substrate, magnesium aluminate spinel MgAl 2 O 4 , MgO, ZnO, ZrB 2 , LiAlO 2 and LiGaO 2 any one of the composite substrates.

[0051] The above are only the preferred embodiments of the present invention. It should be noted that for those of ordinary skill in the art, without departing from the technical principle of the present invention, several improvements and modifications can be made, and these improvements and modifications should also be regarded as the protection scope of the present invention.

Claims

1. A semiconductor green laser element, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105), characterized in that: A topological phonon transition layer (106) is provided between the upper waveguide layer (104) and the upper confinement layer (105). The topological phonon transition layer (106) is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; The topological phonon transition layer (106) includes a first topological phonon transition layer (106a), a second topological phonon transition layer (106b) and a third topological phonon transition layer (106c).

2. A semiconductor green laser element according to claim 1, characterized in that: The polarimetric phonon energy distribution of the first topological phonon transition layer (106a) has a function y=A+B*x 2 / e x Curve distribution, the polari-optical phonon energy distribution of the second topological phonon transition layer (106b) has the function y = C + D * log a x(0<a<1) curve distribution, the polari-optical phonon energy distribution of the third topological phonon transition layer (106c) has the function y=E+F*e x The cosx third quadrant curve is distributed; the polarimetric phonon energy of the first topological phonon transition layer (106a) is d, the polarimetric phonon energy of the second topological phonon transition layer (106b) is e, and the polarimetric phonon energy of the third topological phonon transition layer (106c) is f, wherein: 20≤e≤d≤f≤500 (meV).

3. A semiconductor green laser element according to claim 1, characterized in that: The electron mobility distribution of the first topological phonon transition layer (106a) has the function y=G+H*lnx / e x Curve distribution, the electron mobility distribution of the second topological phonon transition layer (106b) has the function y = I + J * log b The distribution of the x(b>1) curve shows that the electron mobility distribution of the third topological phonon transition layer (106c) has the function y=K+L*e x / x 2 The second quadrant curve distribution; the electron mobility of the first topological phonon transition layer (106a) is g, the electron mobility of the second topological phonon transition layer (106b) is h, and the electron mobility of the third topological phonon transition layer (106c) is i, wherein: 10≤i≤h≤g≤10000 (cm 2 / Vsec).

4. The semiconductor green laser element according to claim 1, characterized in that: The longitudinal phonon velocity distribution of the first topological phonon transition layer (106a) has a function y=M+N*(e x +e -x ) / (e x -e -x ) The first quadrant curve distribution, the longitudinal phonon velocity distribution of the second topological phonon transition layer (106b) has the function y = O + P * log b The x(b>1) curve distribution, the longitudinal phonon velocity distribution of the third topological phonon transition layer (106c) has the function y=Q+R*e x x 2 Curve distribution; the longitudinal phonon velocity of the first topological phonon transition layer (106a) is j, the longitudinal phonon velocity of the second topological phonon transition layer (106b) is k, and the longitudinal phonon velocity of the third topological phonon transition layer (106c) is l, wherein: 5E4≤j≤l≤k≤5E6 (cm / s).

5. The semiconductor green laser element according to claim 1, characterized in that: The transverse phonon velocity distribution of the first topological phonon transition layer (106a) has a first four-quadrant curve distribution of function y=S+T*cosx / x, and the transverse phonon velocity distribution of the second topological phonon transition layer (106b) has a function y=U*V*log a The transverse phonon velocity distribution of the third topological phonon transition layer (106c) has the function y=W+Z*(e x +e -x ) / (e x -e -x ) The transverse phonon velocity of the first topological phonon transition layer (106a) is m, the transverse phonon velocity of the second topological phonon transition layer (106b) is n, and the transverse phonon velocity of the third topological phonon transition layer (106c) is p, wherein: 5E4≤m≤p≤n≤5E6 (cm / s).

6. The semiconductor green laser element according to claim 1, characterized in that: The In / C element ratio distribution of the first topological phonon transition layer (106a) has a function y=A2+B2*lnx / x curve distribution; the Al / C element ratio distribution of the second topological phonon transition layer (106b) has a function y=C2+D2*log a x(0<a<1) curve distribution; the Al / C element ratio distribution of the third topological phonon transition layer (106c) has a function y=E2+F2*(e x +e -x ) / (e x -e -x )The third quadrant curve distribution.

7. The semiconductor green laser element according to claim 1, characterized in that: The In / H element ratio distribution of the first topological phonon transition layer (106a) has a function y=G2+H2*lnx / e x Curve distribution; The Al / H element ratio distribution of the second topological phonon transition layer (106b) has a function y=H2+J2*log a x(0<a<1) curve distribution; the Al / H element ratio distribution of the third topological phonon transition layer (106c) has a function y=K2+L2*e x / cosx third quadrant curve distribution.

8. The semiconductor green laser element according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond or the like. Any combination, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

9. The semiconductor green laser element according to claim 1, characterized in that: The lower confinement layer (101), the lower waveguide layer (102), the upper waveguide layer (104), and the upper confinement layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

10. The semiconductor green laser element according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, Mo, CuW, TiW, Cu, diamond, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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