A thin-film solar cell module interconnection structure and preparation method thereof

Abstract

The present invention relates to an interconnect structure for a thin-film solar cell module and a method for fabricating the same, comprising the following steps: 1) selecting a substrate for deposition of a first electrode layer; 2) forming P1 scribe lines; 3) depositing a device functional layer; 4) forming P2 scribe lines; 5) depositing a second electrode layer; and 6) forming P3 scribe lines. On the one hand, while reducing the width of the dead zone, the present invention not only ensures that photogenerated carriers in the device functional layer corresponding to the P3 scribe line can be collected with a certain probability under drift, thereby improving the module's photoelectric conversion performance, but also enables absorption in the device functional layer, preventing the breakage of the conductive path between adjacent sub-cells and reducing series resistance. On the other hand, the formed scribe grooves, which are connected to the grooves or separated by the second electrode layer, not only prevent warping of the scribe edges and the formation of craters, but also control damage to the device layer and eliminate lattice defects near the dead zone, thereby improving the open circuit voltage and fill factor.

Description

Technical Field

[0001] The present invention belongs to the field of solar cells, and in particular relates to an interconnection structure of a thin-film solar cell module, and also relates to a preparation method of the interconnection structure of a thin-film solar cell module. Background Art

[0002] At present, for large-area thin-film solar cell modules, three steps of scribing and interconnection processes are basically required to meet the needs of actual use. In short, the general thin-film solar cell module uses the laser scribing method to divide the large-area battery into several sub-battery units and then interconnect them. The specific process (combined with Figure 1 shown) are:

[0003] First, the first electrode layer 1′ on the substrate 0′ is scribed into several small sections to form the P1 scribe line. Next, the P / N type functional layer 2′, the intrinsic absorption layer 3′, and the N / P type functional layer 4′ are deposited to form the device layer for photoelectric conversion. Then, the device layer is scribed the same number of times in parallel at a minimum distance on one side of the P1 scribe line to form the P2 scribe line. Finally, after depositing the second electrode layer 5′, the device layer is scribed the same number of times in parallel at a minimum distance on one side of the P2 scribe line to form the P3 scribe line. In this way, the entire large-area battery forms a series structure of several sub-cells. However, this scribe-section interconnection method has the following problems:

[0004] 1) For each sub-cell, a non-power-generating area is created between the P1 line and the P3 line, also known as the dead zone. The device area between P2 and P3 is in a short-circuit state due to the blocking of P3, such as Figure 1 The dotted line part in the figure is the ineffective area. Therefore, the existence of this dead zone directly reduces the effective power generation area, reduces the number of photogenerated carriers, and causes a decrease in the short-circuit current (Isc). At the same time, lattice defects or impurities near the dead zone form recombination centers, which accelerate the recombination of electron-hole pairs and reduce the open circuit voltage (Voc) and fill factor (FF).

[0005] 2) The P3 line used completely removes the absorption layer. That is, the P3 line should only isolate the back electrode layer. If the absorption layer is excessively removed, the conductive channel between adjacent sub-cells may be broken, destroying the sub-cell series structure, significantly increasing the series resistance (Rs), and reducing the fill factor (FF) and efficiency. At the same time, the dead zone range includes the entire area between P1 and P3 (generally, the width of the dead zone is 100-200μm). Therefore, the overall photoelectric conversion performance of the component is relatively low. Summary of the Invention

[0006] The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art and provide an improved thin-film solar cell component interconnection structure.

[0007] It also relates to a method for preparing an interconnection structure of a thin-film solar cell assembly.

[0008] To solve the above technical problems, the present invention adopts the following technical solution: a method for preparing an interconnection structure of a thin-film solar cell module, comprising the following steps:

[0009] 1) Selecting a substrate and depositing a first electrode layer on the substrate;

[0010] 2) Scribing the first electrode layer to form a P1 line, with the depth of the scribe being equal to the thickness of the first electrode layer;

[0011] 3) depositing a P / N type functional layer, an intrinsic absorption layer, and an N / P type functional layer on the first electrode layer and the substrate in sequence, wherein the P / N type functional layer fills the scribed area and the surface of the P / N type functional layer is flat;

[0012] 4) With the P1 scribe line as a parallel reference, a P2 scribe line is formed near the P1 scribe line, which is recessed from the P / N type functional layer toward the first electrode layer, and the depth of the scribe line is the sum of the thicknesses of the N / P type functional layer, the intrinsic absorption layer, and the P / N type functional layer;

[0013] 5) depositing a second electrode layer, wherein the second electrode layer is partially formed on the N / P type functional layer, partially formed on the groove walls corresponding to the N / P type functional layer, the intrinsic absorption layer, and the P / N type functional layer in the groove of the P2 scribe line, and the remaining portion is formed on the first electrode layer, and the second electrode layer located in the P2 scribe line forms a groove, and the width of the groove is smaller than the width of the P2 scribe line;

[0014] 6) With the P2 line as a parallel reference, scribe from the second electrode layer to the N / P type functional layer near the P2 line to form a P3 line, and the depth of the P3 line is the thickness of the second electrode layer, wherein the sum of the width of the P1 line, the width of the P2 line, and the width of the interval between the P1 line and the P2 line is equal to the dead zone width; the P3 line forms a groove, and the groove and the groove are connected or separated by the second electrode layer.

[0015] In some specific embodiments, the substrate material is an inorganic non-metal, a metal, or a polymer. Inorganic non-metals include rigid glass and flexible glass; metals include stainless steel, aluminum alloys, and titanium; and / or polymers include polyethylene terephthalate, polyethylene naphthalate, polyimide, polyparaxylene, and polycarbonate. In short, the substrate material includes, but is not limited to, inorganic non-metals such as rigid glass and ultra-thin flexible glass; metals such as stainless steel (SS), aluminum alloys (Al), and titanium (Ti); polymers such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI), polyparaxylene, and polycarbonate (PC).

[0016] According to a specific implementation and preferred aspect of the present invention, in step 1), the first electrode layer material is a transparent conductive oxide. Specifically, the deposition method of the first electrode layer includes any one of vacuum evaporation, magnetron sputtering, reactive plasma deposition, and chemical vapor deposition, or a combination of at least two of them.

[0017] Preferably, the thickness of the first electrode layer is 10-1000 nm.

[0018] In some specific embodiments, the first electrode layer material includes any one of fluorine-doped tin oxide, tin-doped indium oxide, zinc-doped indium oxide, aluminum-doped zinc oxide, indium oxide doped with tungsten, titanium-tin-doped indium oxide, boron-doped zinc oxide, and cerium-doped indium oxide, or a combination of at least two thereof.

[0019] Alternatively, the first electrode layer material is metal oxide, and the conductive metal in the metal oxide includes one or a combination of at least two of copper, silver, gold, iron, aluminum, tungsten, molybdenum, chromium, nickel, tantalum, vanadium, titanium, and manganese.

[0020] In short, the first electrode layer material can be any one or a combination of at least two of a transparent conductive oxide (TCO) including but not limited to FTO (fluorine-doped tin oxide), ITO (tin-doped indium oxide), IZO (zinc-doped indium oxide), AZO (aluminum-doped zinc oxide), IWO (indium-doped tungsten oxide), ITIO (titanium-tin-doped indium oxide), BZO (boron-doped zinc oxide) or ICO (cerium-doped indium oxide), or can be any one or a combination of at least two of a conductive metal including but not limited to copper, silver, gold, iron, aluminum, tungsten, molybdenum, chromium, nickel, tantalum, vanadium, titanium, manganese and other high-conductivity metals and alloys.

[0021] According to another specific implementation and preferred aspect of the present invention, in step 2), a nanosecond infrared, picosecond infrared, nanosecond ultraviolet, or picosecond ultraviolet laser is used to scribe the P1 lines, where the number of P1 lines is any integer greater than 1, and the number of P2 and P3 lines matches the number of P1 lines and is arranged in a one-to-one correspondence. That is, each sub-cell forms a set of P1 lines, P2 lines, and P3 lines.

[0022] Preferably, the width of the P1 line is 20-50 μm; the wavelength of the infrared laser used is 1064±106.4 nm, the wavelength of the green laser is 532±53.2 nm, and the wavelength of the ultraviolet laser is 355±35.5 nm.

[0023] According to another specific implementation and preferred aspect of the present invention, in step 3), the P / N type functional layer, the intrinsic absorption layer, and the N / P type functional layer constitute a device layer for photoelectric conversion, and the device layer is one or a combination of at least two of amorphous silicon, perovskite, copper indium gallium selenide, cadmium telluride, and gallium arsenide.

[0024] According to another specific implementation and preferred aspect of the present invention, in step 4), mechanical scribing or nanosecond infrared or picosecond infrared or nanosecond green light or picosecond green light or nanosecond ultraviolet or picosecond ultraviolet laser scribing is used, and the width of the P2 line is 20-50 μm; and / or, the infrared laser wavelength is 1064±106.4 nm, the green laser wavelength is 532±53.2 nm, and the ultraviolet laser wavelength is 355±35.5 nm.

[0025] In some specific embodiments, the distance between the P1 and P2 lines is less than the width of the P2 line, and the width of the P1 line is less than or equal to the width of the P2 line. In short, the manufacturing process uses the "P1 line" as a parallel reference to avoid completely overlapping or even exceeding the range of the P1 line. However, appropriate intersection theoretically does not affect the photoelectric conversion performance of the device. For process stability considerations, the P2 line is kept parallel to the P1 line as much as possible, and the spacing is close to zero. At the same time, the width of the P1 line is less than or equal to the width of the P2 line. This is mainly to allow the deposition of the second electrode layer to form the required wide groove.

[0026] According to another specific implementation and preferred aspect of the present invention, in step 5), the second electrode layer material is a transparent conductive oxide, and the second electrode layer deposition method includes any one of vacuum evaporation, magnetron sputtering, reactive plasma deposition, and chemical vapor deposition, or a combination of at least two thereof.

[0027] Preferably, the thickness of the second electrode layer is 10-1000 nm.

[0028] Preferably, the second electrode layer material includes any one of fluorine-doped tin oxide, tin-doped indium oxide, zinc-doped indium oxide, aluminum-doped zinc oxide, indium oxide doped with tungsten, titanium-tin-doped indium oxide, boron-doped zinc oxide, and cerium-doped indium oxide, or a combination of at least two thereof.

[0029] Alternatively, the second electrode layer material is metal oxide, and the conductive metal in the metal oxide includes one or a combination of at least two of copper, silver, gold, iron, aluminum, tungsten, molybdenum, chromium, nickel, tantalum, vanadium, titanium, and manganese.

[0030] In short, the second electrode layer material can be any one or a combination of at least two of a transparent conductive oxide (TCO) including but not limited to FTO (fluorine-doped tin oxide), ITO (tin-doped indium oxide), IZO (zinc-doped indium oxide), AZO (aluminum-doped zinc oxide), IWO (indium-doped tungsten oxide), ITIO (titanium-tin-doped indium oxide), BZO (boron-doped zinc oxide), or ICO (cerium-doped indium oxide). It can also be any one or a combination of at least two of a conductive metal including but not limited to copper, silver, gold, iron, aluminum, tungsten, molybdenum, chromium, nickel, tantalum, vanadium, titanium, manganese, and other high-conductivity metals and alloys. The second electrode layer can be deposited by methods including but not limited to vacuum evaporation, magnetron sputtering, reactive plasma deposition, and chemical vapor deposition, or a combination of at least two of the following methods. The thickness of the second electrode layer is 10-1000 nm.

[0031] Furthermore, in step 6), mechanical P3 lines are scribed using a scriber with a width of 20-200μm. In short, the P3 lines are scribed using a mechanical scriber. The depth of the P3 lines is equal to the thickness of the second electrode layer. The P3 scriber should ensure that the second electrode layer is completely severed, meaning that the second electrode layer is completely removed within the P3 scribe area. However, the scribe edges should be kept from warping, creating a "crater," and damage to the device layer must be minimized.

[0032] Another technical solution of the present invention is: a thin-film solar cell module interconnection structure, which includes a substrate, a first electrode layer, a device layer for photoelectric conversion and a second electrode layer, wherein a P1 line is formed on the first electrode layer, the device layer fills the P1 line, and a P2 line is formed near the P1 line on the device layer, the second electrode layer is deposited within the device layer, the first electrode layer and the P2 line to form a groove, and a P3 line is formed on the second electrode layer near the P2 line and with the P2 line as a parallel reference, wherein the engraving depth of the P3 line is the thickness of the second electrode layer, and the P3 line forms a groove, the groove and the groove are connected or separated by the second electrode layer, the P1 line, the P2 line and the interval between the P1 line and the P2 line constitute a dead zone, the side of the P3 line constitutes the edge of the dead zone or the side of the P3 line is located within the dead zone.

[0033] Preferably, the device layer includes a P / N type functional layer, an intrinsic absorption layer and an N / P type functional layer arranged in sequence from the substrate to the second electrode layer, wherein the surface layer formed by filling the P1 line in the P / N type functional layer is a planar layer, and the intrinsic absorption layer and the N / P type functional layer are both in a planar layer layout.

[0034] In addition, the bottom thickness of the groove is smaller than the thickness of the P / N type functional layer.

[0035] Due to the implementation of the above technical solution, the present invention has the following advantages compared with the prior art:

[0036] In the existing solar cell module segmented interconnection method, a non-power generation area is created between the P1 and P3 lines of each sub-cell, also known as a dead zone. The device area between P2 and P3 is in a short-circuit state due to the blocking of P3. Therefore, the existence of this dead zone directly reduces the effective power generation area, reduces the number of photogenerated carriers, and causes a decrease in the short-circuit current (Isc). At the same time, lattice defects or impurities near the dead zone form recombination centers, accelerating the recombination of electron-hole pairs and reducing the open circuit voltage (Voc) and fill factor (FF). The P3 line used completely removes the absorption layer, that is, the P3 line should only isolate the back electrode. The electrode layer, if the absorption layer is excessively removed, may cause the conductive channel between adjacent sub-cells to break, destroy the sub-cell series structure, significantly increase the series resistance (Rs), reduce the fill factor (FF) and efficiency, and at the same time, the dead zone range includes the entire area between P1 and P3 (generally, the width of the dead zone is 100-200μm). Therefore, the overall photoelectric conversion performance of the component is low, etc. The present invention comprehensively designs the preparation method of the interconnection structure of the thin-film solar cell component, cleverly solving the shortcomings and defects of the prior art. After adopting the preparation method of the interconnection structure of the thin-film solar cell component, a substrate is selected, and on the substrate A first electrode layer is deposited on the substrate, and then a P1 line is scribed on the first electrode layer, and the depth of the scribe is the thickness of the first electrode layer. Then, a P / N type functional layer, an intrinsic absorption layer, and an N / P type functional layer are sequentially deposited on the first electrode layer and the substrate, wherein the P / N type functional layer fills the scribe area, and the surface of the P / N type functional layer is flat. Then, with the P1 line as a parallel reference, a P2 line is formed near the P1 line, which is concave from the P / N type functional layer to the first electrode layer, and the depth of the scribe is the sum of the thicknesses of the N / P type functional layer, the intrinsic absorption layer, and the P / N type functional layer. Then, a second electrode layer is deposited, wherein the second electrode layer The electrode layer is partially formed on the N / P type functional layer and partially formed in the groove of the P2 scribe line. The N / P type functional layer, the intrinsic absorption layer, the P / N type functional layer and the corresponding groove wall are formed on the first electrode layer. The second electrode layer located in the P2 scribe line forms a groove, and the width of the groove is smaller than the width of the P2 scribe line. Finally, with the P2 scribe line as a parallel reference, a P3 scribe line is formed from the second electrode layer to the N / P type functional layer near the P2 scribe line. The depth of the P3 scribe line is the thickness of the second electrode layer, wherein the sum of the width of the P1 scribe line, the width of the P2 scribe line and the width of the interval between the P1 scribe line and the P2 scribe line is equal to the dead zone width.The P3 scribe line forms a groove, which is connected to one another or separated by a second electrode layer. Therefore, on the one hand, the present invention, while reducing the width of the dead zone, preserves the device functional layers formed by the P / N-type functional layer, intrinsic absorption layer, and N / P-type functional layer corresponding to the P3 scribe line. This not only ensures that photogenerated carriers in the device functional layer corresponding to the P3 scribe line can be collected with a certain probability under drift, thereby improving the overall photoelectric conversion performance of the component, but also enables absorption in the device functional layer, preventing the conductive path between adjacent sub-cells from being broken, thereby reducing series resistance. On the other hand, the grooves formed by the second electrode layer, which are connected to one another or separated by the second electrode layer, not only prevent the scribe edge from warping and forming craters, but also control damage to the device layer and eliminate lattice defects near the dead zone to improve the open circuit voltage (Voc) and fill factor (FF). BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 A schematic diagram of the interconnection structure of thin-film solar cell modules in the background art;

[0038] Figure 2 Schematic diagram of the interconnection structure of thin-film solar cell modules in Example 1;

[0039] Figure 3 Schematic diagram of the interconnection structure of thin-film solar cell modules in Example 2.

[0040] Among them: 0′, 1, substrate; 1′, 2, first electrode layer; 3, device layer; 2′, 30, P / N type functional layer; 3′, 31, intrinsic absorption layer; 4′, 32, N / P type functional layer; 5′, 4, second electrode layer; I, I′, groove; II, II′, groove. DETAILED DESCRIPTION

[0041] To make the above-mentioned objects, features, and advantages of the present invention more clearly understood, the present invention is described in detail below with reference to the accompanying drawings and specific embodiments. The following description sets forth many specific details to facilitate a full understanding of the present invention. However, the present invention can be implemented in many other ways than those described herein, and those skilled in the art can make similar modifications without violating the scope of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0042] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention.

[0043] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of technical features indicated. Thus, features specified as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0044] In the present invention, unless otherwise specified or limited, the terms "mounted," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; they can refer to direct connection or indirect connection through an intermediate medium; they can refer to internal communication between two components or interaction between two components, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0045] In the present invention, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediary. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0046] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or there may be an intermediate element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only implementation methods.

[0047] Example 1: Figure 2 As shown, the interconnection structure of the thin-film solar cell module involved in this embodiment includes a substrate 1, a first electrode layer 2, a device layer 3 for photoelectric conversion, and a second electrode layer 4, wherein a P1 scribe line is formed on the first electrode layer 2, the device layer 3 fills the P1 scribe line, and a P2 scribe line is formed near the P1 scribe line on the device layer 3, the second electrode layer 4 is deposited within the device layer 3, the first electrode layer 2, and the P2 scribe line to form a groove I, and a P3 scribe line is formed on the second electrode layer 4 near the P2 scribe line and with the P2 scribe line as a parallel reference, wherein the engraving depth of the P3 scribe line is the thickness of the second electrode layer 4, and the P3 scribe line forms a groove II, the P1 scribe line, the P2 scribe line, and the interval between the P1 scribe line and the P2 scribe line constitute a dead zone, the side of the P3 scribe line constitutes the edge of the dead zone, and the groove II and the groove I are separated by the second electrode layer 4.

[0048] Specifically, the device layer 3 includes a P / N-type functional layer 30, an intrinsic absorption layer 31, and an N / P-type functional layer 32, arranged in sequence from the substrate toward the second electrode layer 4. The surface layer of the P / N-type functional layer 30, formed by filling the P1 scribe line, is a planar layer. The intrinsic absorption layer 31 and the N / P-type functional layer 32 are both planar layers. The thickness of the groove bottom is less than that of the P / N-type functional layer.

[0049] In this example, the thin-film solar cell module is a perovskite thin-film solar cell module, which has a size of 1200*600mm and a number of 93 sub-cells. The preparation method includes the following steps:

[0050] 1) Selecting a substrate 1 and depositing a first electrode layer 2 on the substrate 1, wherein the substrate 1 is made of an inorganic non-metal (such as flexible glass), and the first electrode layer 2 is an FTO electrode layer, and is formed on the flexible glass by a deposition method;

[0051] 2) Using laser scribing to form a P1 line on the first electrode layer 2, the depth of the scribing is equal to the thickness of the first electrode layer 2, and the width of the P1 line is 40 μm;

[0052] 3) depositing a P / N type functional layer 30, an intrinsic absorption layer 31, and an N / P type functional layer 32 on the first electrode layer 2 and the substrate 1 in sequence, wherein the P / N type functional layer 30 fills the scribed area and the surface of the P / N type functional layer is planar;

[0053] 4) Using the P1 scribe line as a parallel reference, laser scribe a P2 scribe line recessed from the P / N type functional layer toward the first electrode layer 2 near the P1 scribe line. The scribe line has a depth equal to the sum of the thicknesses of the N / P type functional layer 32, the intrinsic absorption layer 31, and the P / N type functional layer 30. The spacing between the P1 scribe line and the P2 scribe line is 20 μm, and the width of the P2 scribe line is 60 μm.

[0054] 5) depositing a second electrode layer 4, wherein the second electrode layer 4 is partially formed on the N / P type functional layer 32, partially formed on the groove walls corresponding to the N / P type functional layer 32, the intrinsic absorption layer 31, and the P / N type functional layer 30 in the groove of the P2 scribe line, and the remaining portion is formed on the first electrode layer 2, and the second electrode layer 4 located in the P2 scribe line forms a groove I, the width of the groove I is 25 μm, and the second electrode layer 4 is a composite electrode layer;

[0055] 6) Using the P2 line as a parallel reference, mechanically scribe near the P2 line and scribe from the second electrode layer to the N / P-type functional layer to form a P3 line, and the depth of the P3 line is the thickness of the second electrode layer 4, wherein the sum of the width of the P1 line, the width of the P2 line, and the width of the interval between the P1 line and the P2 line is equal to the dead zone width (40+60+20=120μm); the P3 line forms a groove II, the width of the groove II is 40μm, and the groove II is separated from the groove I by the second electrode layer 4.

[0056] Example 2: Figure 3 As shown, the interconnection structure of the thin-film solar cell module involved in this embodiment is basically the same as that of Example 1, with the difference being the P3 line.

[0057] Specifically, in this example, the side of the P3 line is located within the dead zone.

[0058] In this example, the thin-film solar cell module is a perovskite thin-film solar cell module, which has a size of 1200*600mm and a number of 93 sub-cells. The preparation method includes the following steps:

[0059] 1) Selecting a substrate 1 and depositing a first electrode layer 2 on the substrate 1, wherein the substrate 1 is made of an inorganic non-metal (such as flexible glass), and the first electrode layer 2 is an FTO electrode layer, and is formed on the flexible glass by a deposition method;

[0060] 2) Using laser scribing to form a P1 line on the first electrode layer 2, the depth of the scribing is equal to the thickness of the first electrode layer 2, and the width of the P1 line is 30 μm;

[0061] 3) depositing a P / N type functional layer 30, an intrinsic absorption layer 31, and an N / P type functional layer 32 on the first electrode layer 2 and the substrate 1 in sequence, wherein the P / N type functional layer 30 fills the scribed area and the surface of the P / N type functional layer is planar;

[0062] 4) Using the P1 scribe line as a parallel reference, laser scribe a P2 scribe line recessed from the P / N type functional layer toward the first electrode layer 2 near the P1 scribe line. The scribe line has a depth equal to the sum of the thicknesses of the N / P type functional layer 32, the intrinsic absorption layer 31, and the P / N type functional layer 30. The spacing between the P1 scribe line and the P2 scribe line is 20 μm, and the width of the P2 scribe line is 40 μm.

[0063] 5) depositing a second electrode layer 4, wherein the second electrode layer 4 is partially formed on the N / P type functional layer 32, partially formed on the groove walls corresponding to the N / P type functional layer 32, the intrinsic absorption layer 31, and the P / N type functional layer 30 in the groove of the P2 scribe line, and the remaining portion is formed on the first electrode layer 2, and the second electrode layer 4 located in the P2 scribe line forms a groove I, the width of the groove I is 25 μm, and the second electrode layer 4 is a composite electrode layer;

[0064] 6) With the P2 line as a parallel reference, mechanically scribe near the P2 line and scribe from the second electrode layer to the N / P-type functional layer to form a P3 line, and the depth of the P3 line is the thickness of the second electrode layer 4, wherein the sum of the width of the P1 line, the width of the P2 line, and the width of the interval between the P1 line and the P2 line is equal to the dead zone width (30+40+20=90μm); the P3 line forms a groove II, the width of the groove II is 40μm, and the groove II is connected to the groove I, and one side of the P3 line is located in the dead zone.

[0065] Comparative Example 1: Figure 1 As shown, the interconnection structure of the thin-film solar cell module involved in this comparative example includes a substrate 0′, a first electrode layer 1′, a P / N-type functional layer 2′, an intrinsic absorption layer 3′, an N / P-type functional layer 4′, and a second electrode layer 5′, wherein the first electrode layer 1′ is scored into several small sections to form a P1 scoreline; then, the device layer is scored the same number of times in parallel at a distance as small as possible on one side of the "P1 scoreline" to form a P2 scoreline; finally, after depositing the second electrode layer 5′, the device layer is scored the same number of times in parallel at a distance as small as possible on one side of the P2 scoreline to form a P3 scoreline. Therefore, the dead zone width is the maximum distance between the P1 scoreline and the P3 scoreline.

[0066] Taking a perovskite thin-film solar cell module as an example, its size is 1200*600mm, the number of sub-cells is 93, and the preparation method includes the following steps:

[0067] 1) Selecting a substrate 0′ and depositing a first electrode layer 1′ on the substrate 0′, wherein the substrate 0′ is made of an inorganic non-metal (such as flexible glass), and the first electrode layer 1′ is an FTO electrode layer, and is formed on the flexible glass by a deposition method;

[0068] 2) Scribing the first electrode layer 1′ to form a P1 scribe line, wherein the thickness of the scribe line is equal to the thickness of the first electrode layer 1′, and the width of the formed laser scribe line is 40 μm;

[0069] 3) depositing a P / N type functional layer 2′, an intrinsic absorption layer 3′, and an N / P type functional layer 4′ on the first electrode layer 1′ and the substrate 0′ in sequence, wherein the P / N type functional layer 2′ fills the scribed area and the surface of the P / N type functional layer 2′ is planar;

[0070] 4) Using the P1 scribe line as a parallel reference, laser scribe a P2 scribe line recessed from the P / N type functional layer toward the first electrode layer 1′ near the P1 scribe line. The scribe line has a depth equal to the sum of the thicknesses of the N / P type functional layer 4′, the intrinsic absorption layer 3′, and the P / N type functional layer 2′. Furthermore, the spacing between the P1 scribe line and the P2 scribe line is 20 μm, and the width of the P2 scribe line is 50 μm.

[0071] 5) depositing a second electrode layer 5′, wherein the second electrode layer 5′ is partially formed on the N / P type functional layer 4′, partially formed on the groove walls corresponding to the N / P type functional layer 4′, the intrinsic absorption layer 3′, and the P / N type functional layer 2′ in the groove of the P2 scribe line, and the remaining portion is formed on the first electrode layer 1′, and the second electrode layer 5′ located in the P2 scribe line forms a groove I′, the width of the groove I′ is 25 μm, and the second electrode layer 5′ is a composite electrode layer;

[0072] 6) With the P2 line as a parallel reference, laser scribes near the P2 line to form a P3 line recessed from the second electrode layer 5′ to the P / N-type functional layer 2′, wherein the thickness of the P3 line is the sum of the thicknesses of the second electrode layer 5′, the N / P-type functional layer 4′, and the intrinsic absorption layer 3′, and the width of the groove II′ formed by the P3 line is 30 μm. The spacing between the P2 line and the P3 line is 50 μm, that is, the width of the dead zone is 40 μm + 20 μm + 50 μm + 50 μm + 30 μm = 190 μm.

[0073] In summary, the solar cell module interconnect structures of the embodiment and comparative example were tested for cell photoelectric conversion efficiency and related electrical performance parameters under standard illumination power using an IV tester under a simulated solar light source. Specific test results are shown in Table 1.

[0074]

[0075] Based on the data analysis in Table 1, it can be seen that due to the different widths of the dead zone and the use of mechanical engraving for the P3 line and only engraving the second electrode layer, the open circuit voltage, short circuit current, fill factor, output power and conversion efficiency of the entire battery assembly are uniformly and significantly improved.

[0076] In summary, this application has the following technical advantages:

[0077] 1) Based on the premise of reducing the width of the dead zone, by retaining the device functional layer formed by the P / N type functional layer, intrinsic absorption layer, and N / P type functional layer corresponding to the P3 scribe line, not only can the photogenerated carriers in the device functional layer corresponding to the P3 scribe line be collected with a certain probability under the action of drift, thereby improving the overall photoelectric conversion performance of the component, but the device functional layer can also form an absorption layer, avoiding the breakage of the conductive channel between adjacent sub-cells and reducing the series resistance;

[0078] 2) Based on the grooves formed by the second electrode layer, the grooves are connected or separated by the second electrode layer. This not only avoids the edge of the scribe from lifting and forming craters, but also controls the damage to the device layer and eliminates lattice defects near the dead zone to improve the open circuit voltage (Voc) and fill factor (FF).

[0079] 3) Mechanical scribing is used in P3 scribing. Not only does mechanical scribing not produce thermal effects, there is no risk of ablation of the device layer, and it also has little impact on the performance of the overall series component.

[0080] The above detailed description of the present invention is intended to enable persons familiar with the art to understand the contents of the present invention and implement them. It does not limit the scope of protection of the present invention. Any equivalent changes or modifications made based on the spirit of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for preparing an interconnection structure of a thin-film solar cell module, characterized in that: It includes the following steps: 1) Selecting a substrate and depositing a first electrode layer on the substrate; 2) Scribing the first electrode layer to form a P1 line, with the depth of the scribe being equal to the thickness of the first electrode layer; 3) depositing a P / N type functional layer, an intrinsic absorption layer, and an N / P type functional layer on the first electrode layer and the substrate in sequence, wherein the P / N type functional layer fills the scribed area and the surface of the P / N type functional layer is flat; 4) With the P1 scribe line as a parallel reference, a P2 scribe line is formed near the P1 scribe line, which is recessed from the P / N type functional layer toward the first electrode layer, and the depth of the scribe line is the sum of the thicknesses of the N / P type functional layer, the intrinsic absorption layer, and the P / N type functional layer; 5) depositing a second electrode layer, wherein the second electrode layer is partially formed on the N / P type functional layer, partially formed on the groove walls corresponding to the N / P type functional layer, the intrinsic absorption layer, and the P / N type functional layer in the groove of the P2 scribe line, and the remaining portion is formed on the first electrode layer, and the second electrode layer located in the P2 scribe line forms a groove, wherein the distance between the P1 scribe line and the P2 scribe line is less than the width of the P2 scribe line, and the width of the P1 scribe line is less than or equal to the width of the P2 scribe line; and the groove bottom thickness is less than the thickness of the P / N type functional layer; 6) Using the P2 line as a parallel reference, scribe a P3 line from the second electrode layer toward the N / P-type functional layer near the P2 line, and the depth of the P3 line is the thickness of the second electrode layer, wherein the sum of the width of the P1 line, the width of the P2 line, and the width of the interval between the P1 line and the P2 line is equal to the dead zone width; mechanically scribe the P3 line, and form a groove on the P3 line, with the groove and the groove being continuous, and the side of the P3 line being located within the dead zone.

2. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 1, characterized in that: In step 1), the substrate material is an inorganic non-metal, a metal or a polymer.

3. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 2, characterized in that: Inorganic non-metals include rigid glass and flexible glass.

4. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 2, characterized in that: Metals include stainless steel, aluminum alloys, and titanium.

5. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 2, characterized in that: Polymers include polyethylene terephthalate, polyethylene naphthalate, polyimide, parylene, and polycarbonate.

6. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 1, characterized in that: In step 1), the material of the first electrode layer is a transparent conductive oxide.

7. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 6, characterized in that: The deposition method of the first electrode layer includes any one of vacuum evaporation, magnetron sputtering, reactive plasma deposition, and chemical vapor deposition, or a combination of at least two of them.

8. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 6, characterized in that: The first electrode layer material includes any one of fluorine-doped tin oxide, tin-doped indium oxide, zinc-doped indium oxide, aluminum-doped zinc oxide, indium oxide doped with tungsten, titanium-tin-doped indium oxide, boron-doped zinc oxide, and cerium-doped indium oxide, or a combination of at least two thereof.

9. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 6, characterized in that: The first electrode layer material is metal oxide, and the conductive metal in the metal oxide includes one or a combination of at least two of copper, silver, gold, iron, aluminum, tungsten, molybdenum, chromium, nickel, tantalum, vanadium, titanium, and manganese.

10. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 1, characterized in that: The thickness of the first electrode layer is 10-1000 nm.

11. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 1, characterized in that: In step 2), nanosecond infrared or picosecond infrared or nanosecond ultraviolet or picosecond ultraviolet laser is used to scribe P1 lines, wherein the number of P1 lines is any integer greater than 1, and the number of P2 lines and P3 lines matches the number of P1 lines and is arranged in one-to-one correspondence; and / or the width of the P1 lines is 20-50 μm.

12. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 11, characterized in that: The infrared laser wavelength is 1064±106.4nm, the green laser wavelength is 532±53.2nm, and the ultraviolet laser wavelength is 355±35.5nm.

13. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 1, characterized in that: In step 3), the P / N type functional layer, the intrinsic absorption layer, and the N / P type functional layer constitute a device layer for photoelectric conversion, and the device layer is one or a combination of at least two of amorphous silicon, perovskite, copper indium gallium selenide, cadmium telluride, and gallium arsenide.

14. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 1, characterized in that: In step 4), mechanical scribing or nanosecond infrared or picosecond infrared or nanosecond green light or picosecond green light or nanosecond ultraviolet or picosecond ultraviolet laser scribing is used to scribble P2 lines, and the width of the P2 lines is 20-50 μm.

15. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 14, characterized in that: The infrared laser wavelength is 1064±106.4nm, the green laser wavelength is 532±53.2nm, and the ultraviolet laser wavelength is 355±35.5nm.

16. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 1, characterized in that: In step 5), the second electrode layer material is a transparent conductive oxide.

17. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 1, characterized in that: The second electrode layer deposition method includes any one of vacuum evaporation, magnetron sputtering, reactive plasma deposition, and chemical vapor deposition, or a combination of at least two of them.

18. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 17, characterized in that: The second electrode layer material includes any one of fluorine-doped tin oxide, tin-doped indium oxide, zinc-doped indium oxide, aluminum-doped zinc oxide, indium oxide doped with tungsten, titanium-tin-doped indium oxide, boron-doped zinc oxide, and cerium-doped indium oxide, or a combination of at least two thereof.

19. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 17, characterized in that: The second electrode layer material is metal oxide, and the conductive metal in the metal oxide includes one or a combination of at least two of copper, silver, gold, iron, aluminum, tungsten, molybdenum, chromium, nickel, tantalum, vanadium, titanium, and manganese.

20. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 1, characterized in that: The thickness of the second electrode layer is 10-1000 nm.

21. The method for preparing the interconnection structure of thin-film solar cell modules according to claim 1, characterized in that: In step 6), the width of the P3 scribe line is 20-200 μm.

22. A thin-film solar cell module interconnect structure comprising a substrate, a first electrode layer, a device layer for photoelectric conversion, and a second electrode layer, wherein a P1 scribe line is formed on the first electrode layer, the device layer fills the P1 scribe line, and a P2 scribe line is formed near the P1 scribe line on the device layer, and the second electrode layer is deposited within the device layer, the first electrode layer, and the P2 scribe line to form a groove, characterized in that: A P3 line is formed on the second electrode layer, which is close to the P2 line and parallel to the P2 line. The scratching depth of the P3 line is the thickness of the second electrode layer. The P3 line is mechanically scratched, and the P3 line forms a groove. The groove and the groove are connected. The P1 line, the P2 line, and the interval between the P1 line and the P2 line constitute a dead zone, and the side of the P3 line is located in the dead zone.

23. The thin-film solar cell module interconnection structure according to claim 22, characterized in that: The device layer includes a P / N type functional layer, an intrinsic absorption layer and an N / P type functional layer arranged in sequence from the substrate to the second electrode layer, wherein the surface layer formed by filling the P1 line in the P / N type functional layer is a planar layer, and the intrinsic absorption layer and the N / P type functional layer are both in a planar layer layout.

24. The thin-film solar cell module interconnection structure according to claim 23, characterized in that: The thickness of the bottom of the groove is smaller than the thickness of the P / N type functional layer.

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