Diamond tool and tool unit

Abstract

The diamond tool (20) includes: a base portion (30) including a single crystal portion (32) composed of single crystal diamond; and a conductive part (40) formed on the single crystal part (32). The conductive portion (40) includes a conductive portion surface (41) constituting a surface of the diamond tool (20). The base part (30) is configured only from a single crystal part (32) having electrical insulating properties.

Description

Technical Field

[0001] The present invention relates to diamond tools and tool units. Background Art

[0002] As an example of a diamond tool, a scribing wheel, diamond abrasive grains, a cutting tool, a drill bit, and an end mill can be cited. In Patent Document 1, an example of a scribing wheel made of diamond is described.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2022-99809 Summary of the Invention

[0006] Technical Problem to be Solved by the Invention

[0007] Processing chips may adhere to a diamond tool due to electrostatic attraction. Processing chips are sometimes also referred to as particles or cullet. When processing chips adhere to a diamond tool, for example, the processing performance of the diamond tool may decrease.

[0008] Solution to the Technical Problem

[0009] The diamond tool related to the present invention includes: a base portion including a single crystal portion made of single crystal diamond; and a conductive portion formed on the single crystal portion. In the diamond tool, the conductive portion includes a conductive portion surface constituting the surface of the diamond tool, and the base portion is composed only of the single crystal portion having electrical insulation properties.

[0010] According to the diamond tool, for example, the following effects can be obtained. Since the tool surface, which is the surface of the diamond tool, has conductivity, the tool surface is not easily charged. Processing chips are not easily attached to the tool surface.

[0011] In an example of the diamond tool, the conductive portion surface includes hydrogen-terminated diamond.

[0012] According to the diamond tool, for example, the following effects can be obtained. Since the conductive portion includes hydrogen-terminated diamond, the conductivity of the conductive portion becomes high.

[0013] In an example of the diamond tool, the conductive portion includes a hydrogen-terminated layer and an impurity layer. The impurity layer is formed on the single crystal portion, and the hydrogen-terminated layer is formed on the impurity layer and includes the hydrogen-terminated diamond.

[0014] According to the diamond tool, for example, the following effects can be obtained. Since the conductive portion includes a hydrogen-terminated layer and an impurity layer, the conductivity of the conductive portion becomes high.

[0015] In one example of the diamond tool, the surface of the conductive portion constitutes the entire surface of the diamond tool.

[0016] According to the diamond tool, the following effects can be obtained, for example. The machining chips are not easily attached to the tool surface.

[0017] In one example of the diamond tool, the resistivity of the conductive portion is 10 Ω·cm or less.

[0018] According to the diamond tool, the following effects can be obtained, for example. The conductive portion is not easily charged. The tool surface is not easily charged.

[0019] In one example of the diamond tool, the thickness of the conductive portion is 2000 nm or less.

[0020] According to the diamond tool, the following effects can be obtained, for example. It is not easy to produce a difference between the shape of the surface of the base portion in the state before forming the conductive portion and the shape of the surface of the conductive portion.

[0021] In one example of the diamond tool, the diamond tool is a scribing wheel.

[0022] According to the diamond tool, the following effects can be obtained, for example. When scribing a workpiece with a scribing wheel, the machining chips are not easily attached to the scribing wheel.

[0023] The tool unit related to the present invention includes the diamond tool and a tool support portion that supports the diamond tool.

[0024] According to the tool unit, the following effects can be obtained, for example. The tool surface is not easily charged. The machining chips are not easily attached to the tool surface. It is not easy for machining chips to accumulate between the diamond tool and the tool support portion.

[0025] Advantages of the Invention

[0026] The machining chips are not easily attached to the diamond tool or the tool unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 is a schematic diagram of the tool unit.

[0028] Figure 2 is a cross-sectional view of the diamond tool.

[0029] Figure 3 is a block diagram of the diamond synthesis apparatus.

[0030] Figure 4 is a side view of the scribing head.

[0031] Figure 5 This is the front view of the scribing head.

[0032] Figure 6 This is the side view of the scribing wheel.

[0033] Figure 7 This is the sectional view of the scribing wheel.

[0034] Figure 8 This is the sectional view of the bracket unit. Detailed implementation mode

[0035] (First implementation mode)

[0036] Refer to Figure 1 and Figure 2 . Figure 1 The figure shows a schematic diagram related to the tool unit 10. Figure 2 The figure shows a schematic diagram related to the structure of the cross-section of the diamond tool 20. The configurations of the tool unit 10 and the diamond tool 20 can be arbitrarily selected. The configurations of the tool unit 10 and the diamond tool 20 are not limited to the exemplified configurations.

[0037] In one example, the tool unit 10 is assembled to a processing device. In one example, the processing device is configured to perform a specified processing on a workpiece. As an example of the processing device, a scribing processing device, a lathe, a drilling machine, a boring machine, and a milling machine can be cited. In one example, the processing device includes a processing device main body and the tool unit 10, etc.

[0038] In one example, the tool unit 10 includes a tool support portion 11 and a diamond tool 20. In one example, the tool support portion 11 is configured to be combined with the processing device main body. In one example, the tool support portion 11 is configured to support the diamond tool 20.

[0039] In one example, the diamond tool 20 is configured to be suitable for ultra-precision machining, precision machining, or general machining. In one example, the diamond tool 20 is configured to include single-crystal diamond.

[0040] As an example of the diamond tool 20, a scribing wheel, diamond abrasive grains, a cutting tool, a drill bit, and an end mill can be cited. The surface of the diamond tool 20 is referred to as "tool surface 21".

[0041] In one example, the diamond tool 20 includes a base portion 30. In one example, the base portion 30 is configured to be the main body of the diamond tool 20. The surface of the base portion 30 is referred to as "base portion surface 31".

[0042] In one example, the base portion 30 is configured to include single-crystal diamond. In one example, the base portion 30 includes a single-crystal portion 32 made of single-crystal diamond. In one example, the single-crystal portion 32 has electrical insulation properties. An example of the structure of the single-crystal portion 32 will be given.

[0043] In the first example, the single-crystal portion 32 constitutes the entirety of the base portion 30. The entirety of the base surface 31 is formed by the single-crystal portion 32.

[0044] In the second example, the single-crystal portion 32 constitutes a part of the base portion 30. The entirety of the base surface 31 is formed by the single-crystal portion 32.

[0045] In the third example, the single-crystal portion 32 constitutes a part of the base portion 30. A part of the base surface 31 is formed by the single-crystal portion 32. The other part of the base surface 31 is made of a raw material other than single-crystal diamond.

[0046] In one example, the diamond tool 20 includes a conductive portion 40 having conductivity. In one example, the conductive portion 40 is a thin film containing diamond having conductivity.

[0047] In one example, the conductive portion 40 is configured to impart conductivity to the diamond tool 20. In one example, the conductive portion 40 is configured to impart conductivity to a part or all of the tool surface 21.

[0048] In one example, the conductive portion 40 is formed on the base portion 30. In one example, the conductive portion 40 is formed on the base surface 31 of the single-crystal portion 32.

[0049] In one example, the base surface 31 includes one or more of a base plane, an inclined surface, and a curved surface. In one example, the base plane is a plane parallel to the center line or center plane of the diamond tool 20. In one example, the inclined surface is a surface inclined with respect to the base plane.

[0050] In one example, the conductive portion 40 is formed on at least one of the base surfaces 31 that is the base plane, the base surface 31 that is the inclined surface, and the base surface 31 that is the curved surface.

[0051] The state of the diamond tool 20 before forming the conductive portion 40 on the base portion 30 and before forming the diamond tool 20 only by the base portion 30 is referred to as the "base state".

[0052] In one example, the diamond tool 20 is configured to have machining performance suitable for machining a workpiece even in a basic state. In one example, the entire base portion surface 31 of the tool surface 21 of the diamond tool 20 in the basic state is composed of a single crystal portion 32. In one example, the tool surface 21 of the diamond tool 20 in the basic state does not have electrical conductivity.

[0053] The surface of the conductive portion 40 is referred to as the "conductive portion surface 41". The conductive portion surface 41 is configured to impart electrical conductivity to the tool surface 21. In one example, the conductive portion surface 41 constitutes part or all of the tool surface 21.

[0054] In one example, the conductive portion 40 includes hydrogen-terminated diamond 42. In one example, the hydrogen-terminated diamond 42 constitutes the conductive portion surface 41. In one example, the surface of the hydrogen-terminated diamond 42 is hydrogen-terminated. In one example, the hydrogen-terminated diamond 42 has electrical conductivity. In one example, the hydrogen-terminated diamond 42 is single crystal diamond or polycrystalline diamond.

[0055] In one example, the conductive portion 40 includes one or more layers. As an example of the layer constituting the conductive portion 40, a hydrogen-terminated layer 43 and an impurity layer 44 can be cited. In one example, the conductive portion 40 includes at least one of the hydrogen-terminated layer 43 and the impurity layer 44.

[0056] As an example of the structure related to the layer of the conductive portion 40, a structure composed of a first layer to a third layer can be cited. In the first layer structure, the conductive portion 40 includes only the hydrogen-terminated layer 43. In the second layer structure, the conductive portion 40 includes only the impurity layer 44. In the third layer structure, the conductive portion 40 includes the hydrogen-terminated layer 43 and the impurity layer 44.

[0057] In the first layer structure, the hydrogen-terminated layer 43 is formed on the base portion surface 31. In the second layer structure or the third layer structure, the impurity layer 44 is formed on the base portion surface 31. In the third layer structure, the hydrogen-terminated layer 43 is formed on the surface of the impurity layer 44.

[0058] In one example, the hydrogen-terminated layer 43 is composed of hydrogen-terminated diamond 42. In one example, the hydrogen-terminated layer 43 has electrical conductivity. In one example, the surface of the hydrogen-terminated layer 43 constitutes the conductive portion surface 41.

[0059] In one example, the impurity layer 44 is composed of single crystal diamond or polycrystalline diamond containing impurities. In one example, the impurity layer 44 has electrical conductivity. As an example of the impurity, boron, nitrogen, and phosphorus can be cited.

[0060] The thickness of the conductive portion 40 is referred to as the "conductive portion thickness". The thickness of the hydrogen termination layer 43 is referred to as the "hydrogen termination layer thickness". The thickness of the impurity layer 44 is referred to as the "impurity layer thickness". As an example of a method for measuring the conductive portion thickness, the hydrogen termination layer thickness, and the impurity layer thickness, secondary ion mass spectrometry can be cited.

[0061] In one example, the conductive portion thickness affects the conductivity of the conductive portion 40. In one example, the conductive portion thickness affects the shape of the surface 41 of the conductive portion. In one example, the conductive portion thickness is included within a specified conductive portion thickness range. The specified conductive portion thickness range is illustrated.

[0062] In the first example, the specified conductive portion thickness range is a range above the lower limit conductive portion thickness. In the second example, the specified conductive portion thickness range is a range below the upper limit conductive portion thickness. In the third example, the specified conductive portion thickness range is a range above the lower limit conductive portion thickness and below the upper limit conductive portion thickness.

[0063] In one example, the lower limit conductive portion thickness is selected from 1 nm, 2 nm, and 5 nm. In one example, the upper limit conductive portion thickness is selected from 200 nm, 500 nm, and 2000 nm.

[0064] In one example, the hydrogen termination layer thickness is thinner than the impurity layer thickness. In one example, the hydrogen termination layer thickness is included within a specified hydrogen termination layer thickness range. The specified hydrogen termination layer thickness range is illustrated.

[0065] In the first example, the specified hydrogen termination layer thickness range is a range above the lower limit hydrogen termination layer thickness. In the second example, the specified hydrogen termination layer thickness range is a range below the upper limit hydrogen termination layer thickness. In the third example, the specified hydrogen termination layer thickness range is a range above the lower limit hydrogen termination layer thickness and below the upper limit hydrogen termination layer thickness.

[0066] In one example, the lower limit hydrogen termination layer thickness is selected from 1 nm, 2 nm, and 5 nm. In one example, the upper limit hydrogen termination layer thickness is selected from 6 nm, 8 nm, and 10 nm.

[0067] In one example, the impurity layer thickness is thicker than the hydrogen termination layer thickness. In one example, the impurity layer thickness is included within a specified impurity layer thickness range. The specified impurity layer thickness range is illustrated.

[0068] In the first example, the specified impurity layer thickness range is a range above the lower limit impurity layer thickness. In the second example, the specified impurity layer thickness range is a range below the upper limit impurity layer thickness. In the third example, the specified impurity layer thickness range is a range above the lower limit impurity layer thickness and below the upper limit impurity layer thickness.

[0069] In one example, the lower limit of the impurity layer thickness is selected from 10 nm, 50 nm, and 100 nm. In one example, the upper limit of the impurity layer thickness is selected from 200 nm, 500 nm, and 2000 nm.

[0070] The value obtained by dividing the impurity layer thickness by the hydrogen termination layer thickness is referred to as the "layer thickness ratio". In one example, the layer thickness ratio is within a specified layer thickness ratio range. An example of the specified layer thickness ratio range is given.

[0071] In the first example, the specified layer thickness ratio is a range above the lower limit layer thickness ratio. In the second example, the specified layer thickness ratio is a range below the upper limit layer thickness ratio. In the third example, the specified layer thickness ratio is a range above the lower limit layer thickness ratio and below the upper limit layer thickness ratio.

[0072] In one example, the lower limit layer thickness ratio is selected from 0.005, 0.016, and 0.03. In one example, the upper limit layer thickness ratio is selected from 0.04, 0.05, and 0.1.

[0073] The resistivity of the conductive portion 40 is referred to as the "conductive portion resistivity". In one example, the conductive portion resistivity is an index related to the conductivity of the conductive portion 40. In one example, the conductive portion resistivity is within a specified conductive portion resistivity range. An example of the specified conductive portion resistivity range is given.

[0074] In the first example, the specified conductive portion resistivity range is a range above the lower limit conductive portion resistivity. In the second example, the specified conductive portion resistivity range is a range below the upper limit conductive portion resistivity. In the third example, the specified conductive portion resistivity range is a range above the lower limit conductive portion resistivity and below the upper limit conductive portion resistivity.

[0075] In one example, the lower limit conductive portion resistivity is selected from 1 mΩ·cm, 10 mΩ·cm, and 100 mΩ·cm. In one example, the upper limit conductive portion resistivity is selected from 500 mΩ·cm, 1 Ω·cm, and 10 Ω·cm.

[0076] (Manufacturing apparatus)

[0077] Refer to Figure 3 . In one example, the conductive portion 40 is formed by a specified manufacturing method. As an example of the specified manufacturing method, a hot wire CVD (Chemical Vapor Deposition) method, a microwave plasma CVD method, or a DC plasma CVD method can be cited. In one example, the hot wire CVD method can be selected as the specified manufacturing method.

[0078] In one example, a hot wire CVD method synthesizes a conductive portion 40 on at least a part of a base portion 30 as a substrate by using a diamond synthesis apparatus 900.

[0079] In one example, the diamond synthesis apparatus 900 includes a vacuum chamber 910. In one example, the vacuum chamber 910 includes a synthesis chamber 911. In one example, the synthesis chamber 911 is configured as a space for synthesizing diamond on a substrate by a chemical reaction using a source gas. In one example, the vacuum chamber 910 is configured to be able to maintain the synthesis chamber 911 as a vacuum space.

[0080] In one example, the vacuum chamber 910 includes an opening 912. In one example, the opening 912 connects the synthesis chamber 911 to a space outside the vacuum chamber 910 (hereinafter referred to as the "external space"). In one example, the opening 912 is configured to be able to carry in and out a substrate with respect to the synthesis chamber 911.

[0081] In one example, the vacuum chamber 910 includes an opening / closing portion 913. In one example, the opening / closing portion 913 is configured to be able to open or close the opening 912. In one example, the opening / closing portion 913 is configured to be able to select an open state or a closed state.

[0082] When the state of the opening / closing portion 913 is the open state, the opening 912 is opened. When the state of the opening / closing portion 913 is the closed state, the opening 912 is closed.

[0083] In one example, the vacuum chamber 910 includes an exhaust port 914. In one example, the exhaust port 914 connects the synthesis chamber 911 to the external space.

[0084] In one example, the vacuum chamber 910 includes a supply port 915. In one example, the supply port 915 connects the synthesis chamber 911 to the external space.

[0085] In one example, the diamond synthesis apparatus 900 includes a gas discharge portion 920. In one example, the gas discharge portion 920 is configured to be able to discharge the gas remaining in the synthesis chamber 911 to the external space. In one example, the gas discharge portion 920 includes a vacuum pump 921, a discharge pipe 922, and a discharge control valve 923.

[0086] In one example, the vacuum pump 921 sucks the gas remaining in the synthesis chamber 911 and discharges the sucked gas to the external space. As an example of the type of the vacuum pump 921, a rotary pump, an oil diffusion pump, and a turbo molecular pump can be cited.

[0087] In one example, the discharge pipe 922 connects the discharge port 914 of the vacuum chamber 910 to the vacuum pump 921. The gas remaining in the synthesis chamber 911 flows through the discharge port 914 and the discharge pipe 922 and is attracted by the vacuum pump 92.

[0088] In one example, the discharge control valve 923 is provided in the discharge pipe 922. In one example, the discharge control valve 923 is configured to be able to adjust the flow rate of the gas flowing inside the discharge pipe 922.

[0089] In one example, the diamond synthesis device 900 includes a gas supply unit 930. In one example, the gas supply unit 930 is configured to be able to supply a source gas to the synthesis chamber 911. In one example, the gas supply unit 930 includes a gas storage unit 931, a supply pipe 932, and a supply control valve 933.

[0090] In one example, the gas storage unit 931 stores the source gas supplied to the synthesis chamber 911. In one example, the source gas contains a carbon source that contributes to the synthesis of diamond. In one example, the source gas contains one or more carbon sources. As an example of the carbon source, methane can be cited.

[0091] In one example, the source gas is a mixed gas formed by mixing a carbon source gas containing a carbon source with a carrier gas. As an example of the carrier gas, hydrogen can be cited. In one example, the source gas further contains an impurity source doped in the diamond. In one example, the source gas contains one or more impurity sources.

[0092] As an example of the impurity source, boron, boron compounds, and phosphorus can be cited. As an example of the boron compound, trimethylborane and diborane can be cited.

[0093] In one example, the supply pipe 932 connects the supply port 915 of the vacuum chamber 910 to the gas storage unit 931. The source gas flows through the supply pipe 932 and the supply port 915 and is supplied to the synthesis chamber 911.

[0094] In one example, the supply control valve 933 is provided in the supply pipe 932. In one example, the supply control valve 933 is configured to be able to adjust the flow rate of the source gas flowing inside the supply pipe 932.

[0095] In one example, the diamond synthesis device 900 includes a configuration unit 940. In one example, the configuration unit 940 is a part configured to support a substrate in the synthesis chamber 911.

[0096] In one example, the configuration unit 940 includes a stage 941. In one example, the stage 941 is arranged in the synthesis chamber 911 in a manner capable of moving relative to the vacuum chamber 910. In one example, the stage 941 is configured to be able to hold a substrate.

[0097] In one example, the configuration unit 940 includes a drive unit 942. In one example, the drive unit 942 is configured to be able to move the stage 941 relative to the vacuum chamber 910. In one example, the drive unit 942 includes an actuator.

[0098] In one example, the configuration unit 940 is configured to be able to select a synthesis position or a waiting position as the position of the stage 941 relative to the vacuum chamber 910.

[0099] In one example, the synthesis position is defined as the interval between the substrate disposed on the stage 941 and the wire 951 being an interval suitable for diamond synthesis. In one example, the waiting position is defined as having a greater interval between the substrate and the wire 951 compared to the synthesis position.

[0100] In one example, the diamond synthesis device 900 includes a heating unit 950. In one example, the heating unit 950 heats the source gas supplied to the synthesis chamber 911. In one example, the heating unit 950 includes one or more wires 951, a holding unit 952, and a power supply unit 953.

[0101] In one example, one or more wires 951 are arranged in the synthesis chamber 911. In one example, the wire 951 includes a first end 951A and a second end 951B.

[0102] In one example, the wire 951 is made of a high melting point metal. As an example of a high melting point metal, tungsten, tantalum, rhenium, and ruthenium can be cited. In one example, the wire 951 includes at least one of tungsten, tantalum, rhenium, and ruthenium.

[0103] In one example, the holding unit 952 is provided in the vacuum chamber 910. In one example, the holding unit 952 is configured to be able to attach and detach one or more wires 951. In one example, the holding unit 952 is configured to function as an electrode for the wire 951.

[0104] In one example, the holding unit 952 includes a first holding unit 952A and a second holding unit 952B. In one example, the first holding unit 952A holds the first end 951A of the wire 951. In one example, the second holding unit 952B holds the second end 951B of the wire 951.

[0105] In one example, the power supply unit 953 supplies power to one or more filaments 951. In one example, the power supply unit 953 is electrically connected to the holding unit 952 via the power line 953A. In one example, the power supply unit 953 is a DC power supply.

[0106] The diameter of the filament 951 is referred to as the "filament diameter". In one example, the filament diameter is within a specified filament diameter range. In one example, the specified filament diameter range is 0.1 mm to 0.5 mm.

[0107] The total pressure of the synthesis chamber 911 is referred to as the "total pressure of the synthesis chamber". The flow rate of the source gas inside the supply pipe 932 is referred to as the "source gas flow rate". The temperature of the filament 951 is referred to as the "filament temperature".

[0108] In one example, the diamond synthesis apparatus 900 includes a measurement unit 960. In one example, the measurement unit 960 is configured to be able to measure the total pressure of the synthesis chamber, the source gas flow rate, and the filament temperature. In one example, the measurement unit 960 includes a sensor for measuring the total pressure of the synthesis chamber, a sensor for measuring the source gas flow rate, and a sensor for measuring the filament temperature.

[0109] In one example, the diamond synthesis apparatus 900 includes a control unit 970. In one example, the control unit 970 includes a central processing unit, a main storage device, an auxiliary storage device, an input device, and an output device.

[0110] In one example, the control unit 970 is configured to control controlled elements. As an example of the controlled elements, the vacuum pump 921, the discharge regulating valve 923, the supply regulating valve 933, the drive unit 942, and the power supply unit 953 can be cited.

[0111] In one example, the control unit 970 is configured to be able to communicate with the measurement unit 960 either wired or wirelessly. In one example, the measurement data including the information measured by the measurement unit 960 is sent to the control unit 970. In one example, the control unit 970 controls the controlled elements with reference to the measurement data.

[0112] (Manufacturing method)

[0113] In one example, the manufacturing method of the conductive portion 40 includes a placement process, a gas discharge process, a gas supply process, and a synthesis process. The gas discharge process is performed after the placement process. The gas supply process is performed after the gas discharge process. The synthesis process is performed after the gas supply process.

[0114] In one example, the position of the stage 941 relative to the vacuum chamber 910 is set to the synthesis position before the placement process or after the filament temperature is maintained within a specified filament temperature range during the synthesis process.

[0115] In the configuration process, the state of the opening / closing part 913 of the vacuum chamber 910 is set to the open state. Next, the substrate is placed on the stage 941. Next, the state of the opening / closing part 913 of the vacuum chamber 910 is set to the closed state.

[0116] In the gas discharge process, the gas in the synthesis chamber 911 is discharged by the vacuum pump 921. Due to the discharge of the gas, the total pressure in the synthesis chamber decreases. In one example, the total pressure in the synthesis chamber is maintained within a specified pressure range during discharge. An example of the specified pressure range during discharge is given.

[0117] In the first example, the specified pressure range during discharge is a range above the lower limit pressure during discharge. In the second example, the specified pressure range during discharge is a range below the upper limit pressure during discharge. In the third example, the specified pressure range during discharge is a range above the lower limit pressure during discharge and below the upper limit pressure during discharge.

[0118] In one example, the lower limit pressure during discharge is selected from 0.01 Torr, 0.05 Torr, and 0.1 Torr. In one example, the upper limit pressure during discharge is selected from 0.25 Torr, 0.5 Torr, and 1 Torr.

[0119] In the gas supply process, the raw material gas is supplied from the gas storage unit 931 to the synthesis chamber 911. In one example, the concentration of the carbon source in the raw material gas is included within a specified carbon source concentration range. An example of the specified carbon source concentration range is given.

[0120] In the first example, the specified carbon source concentration range is a range above the lower limit carbon source concentration. In the second example, the specified carbon source concentration range is a range below the upper limit carbon source concentration. In the third example, the specified carbon source concentration range is a range above the lower limit carbon source concentration and below the upper limit carbon source concentration.

[0121] In one example, the lower limit carbon source concentration is selected from 0.1 vol%, 1 vol%, and 3 vol%. In one example, the upper limit carbon source concentration is selected from 4 vol%, 5 vol%, and 6 vol%.

[0122] Due to the supply of the raw material gas, the total pressure in the synthesis chamber increases. In one example, the total pressure in the synthesis chamber is maintained within a specified pressure range during supply. An example of the specified pressure range during supply is given.

[0123] In the first example, the specified pressure range during supply is a range above the lower limit pressure during supply. In the second example, the specified pressure range during supply is a range below the upper limit pressure during supply. In the third example, the specified pressure range during supply is a range above the lower limit pressure during supply and below the upper limit pressure during supply.

[0124] In one example, the lower limit pressure during supply is selected from 5 Torr, 10 Torr, and 15 Torr. In one example, the upper limit pressure during supply is selected from 20 Torr, 30 Torr, and 40 Torr.

[0125] In one example, the raw material gas contains an impurity source. The concentration of the impurity source in the raw material gas relative to the carbon source is referred to as "impurity source concentration". The concentration of impurities predetermined to be contained in the impurity layer 44 of the conductive portion 40 is referred to as "predetermined impurity concentration". In one example, the impurity source concentration is set according to the predetermined impurity concentration.

[0126] In one example, the predetermined impurity concentration is included in the specified impurity concentration range. The specified impurity concentration range is exemplified. In the first example, the specified impurity concentration range is a range above the lower limit impurity concentration. In the second example, the specified impurity concentration range is a range below the upper limit impurity concentration. In the third example, the specified impurity concentration range is a range above the lower limit impurity concentration and below the upper limit impurity concentration.

[0127] In the case where the impurity layer 44 contains boron as an impurity, in one example, the lower limit impurity concentration and the upper limit impurity concentration are selected as follows.

[0128] In one example, the lower limit impurity concentration is from 1×10 18 atoms / cm 3 , 1×10 20 atoms / cm 3 , 5×10 20 atoms / cm 3 In one example, the upper limit impurity concentration is 5×10 20 atoms / cm 3 , 5×10 21 atoms / cm 3 , 5×10 22 atoms / cm 3 choose.

[0129] In one example, the impurity source concentration is included in the specified impurity source concentration range. The specified impurity source concentration range is exemplified. In the first example, the specified impurity source concentration range is a range above the lower limit impurity source concentration. In the second example, the specified impurity source concentration range is a range below the upper limit impurity source concentration. In the third example, the specified impurity source concentration range is a range above the lower limit impurity source concentration and below the upper limit impurity source concentration.

[0130] In the case where the raw material gas contains a boron source as an impurity source, in one example, the lower limit impurity source concentration and the upper limit impurity source concentration are selected as follows.

[0131] In one example, the lower limit impurity source concentration is selected from 10 ppm, 50 ppm, and 100 ppm. In one example, the upper limit impurity source concentration is selected from 1000 ppm, 5000 ppm, and 50000 ppm.

[0132] In the synthesis process, power is supplied to the wire 951. Due to the supply of power, the temperature of the wire rises. In one example, the wire temperature is maintained within a specified wire temperature range. An example of the specified wire temperature range is given.

[0133] In the first example, the specified wire temperature range is a range above the lower limit wire temperature. In the second example, the specified wire temperature range is a range below the upper limit wire temperature. In the third example, the specified wire temperature range is a range above the lower limit wire temperature and below the upper limit wire temperature.

[0134] In one example, the lower limit wire temperature is selected from 2000 °C, 2100 °C, and 2200 °C. In one example, the upper limit wire temperature is selected from 2300 °C, 2500 °C, and 3000 °C.

[0135] In one example, the specified wire temperature range is set according to the relationship with the synthesis influencing factors that affect the synthesis of the conductive portion 40. As an example of the synthesis influencing factors, the type of metal element constituting the wire 951, the concentration of the metal element contained in the conductive portion 40, and the concentration of the impurities contained in the conductive portion 40 can be cited.

[0136] The temperature of the base material is referred to as the "base material temperature". As the wire 951 is heated, the base material temperature rises. In one example, the base material temperature is maintained within a specified base material temperature range.

[0137] An example of the specified base material temperature range is given. In the first example, the specified base material temperature range is a range above the lower limit base material temperature. In the second example, the specified base material temperature range is a range below the upper limit base material temperature. In the third example, the specified base material temperature range is a range above the lower limit base material temperature and below the upper limit base material temperature.

[0138] In one example, the lower limit base material temperature is selected from 600 °C, 700 °C, and 800 °C. In one example, the upper limit base material temperature is selected from 900 °C, 1100 °C, and 1200 °C.

[0139] (Second Embodiment)

[0140] Refer to Figures 4 to 8 . The tool unit 10 and the diamond tool 20 of the present embodiment are configured on the premise of the first embodiment. The tool unit 10 and the diamond tool 20 of the present embodiment include components shared with the premise embodiment.

[0141] A part or all of the description related to the components shared by the tool unit 10 and the diamond tool 20 of the present embodiment and the tool unit 10 and the diamond tool 20 of the prerequisite embodiment may be omitted.

[0142] The processing device of the present embodiment is a scribing processing device. The tool unit 10 of the present embodiment is a bracket unit 200. The tool support portion 11 of the present embodiment is a wheel bracket 300. The diamond tool 20 of the present embodiment is a scribing wheel 400.

[0143] (Scribing processing device)

[0144] The configuration of the scribing processing device can be arbitrarily selected. The configuration of the scribing processing device is not limited to the illustrated configuration.

[0145] In one example, the scribing processing device is configured to be able to perform scribing processing on a workpiece. As an example of the workpiece, a substrate can be cited. As an example of the substrate, a brittle material substrate can be cited.

[0146] As an example of the brittle material substrate, a compound semiconductor substrate, a ceramic substrate, a glass substrate, a silicon substrate, a sapphire substrate, and a quartz substrate can be cited.

[0147] As an example of the compound semiconductor substrate, a silicon carbide substrate, a gallium nitride substrate, a gallium oxide substrate, an indium phosphide substrate, and a gallium arsenide substrate can be cited. As an example of the ceramic substrate, an alumina substrate can be cited.

[0148] In one example, the scribing processing device includes a workbench, a scribing head 100, a moving device, etc. In one example, the workbench includes a placement surface for placing the workpiece. In one example, the scribing head 100 is mounted on the moving device.

[0149] In one example, the moving device is configured to be able to arbitrarily change the position of the scribing head 100 relative to the workpiece. In one example, the moving device includes at least one of a planar moving portion and a vertical moving portion.

[0150] In one example, the planar moving portion changes the position of the scribing head 100 related to the direction parallel to the placement surface of the workbench. In one example, the vertical moving portion changes the position of the scribing head 100 related to the direction perpendicular to the placement surface of the workbench.

[0151] (Scribing head)

[0152] Refer to Figure 4 and Figure 5 . The configuration of the scribing head 100 can be arbitrarily selected. The configuration of the scribing head 100 is not limited to the illustrated configuration.

[0153] In one example, the scribing head 100 includes a base 110. In one example, the base 110 is mounted on a mobile device. The relationship between the base 110 and the mobile device is illustrated. In the first example, the base 110 is mounted on the planar moving part of the mobile device. In the second example, the base 110 is mounted on the vertical moving part of the mobile device.

[0154] In one example, the scribing head 100 includes a bracket assembly 120. In one example, the bracket assembly 120 includes a bracket unit 200. In one example, the bracket unit 200 includes a wheel bracket 300 and a scribing wheel 400.

[0155] In one example, the wheel bracket 300 supports the scribing wheel 400 in a manner that enables rotation relative to the wheel bracket 300. In one example, the scribing wheel 400 is configured to scribe a workpiece.

[0156] In one example, the bracket assembly 120 includes a bracket joint 130. In one example, the bracket joint 130 is configured to support the bracket unit 200. The configurations of the bracket joint 130 and the bracket unit 200 are illustrated.

[0157] In the first example, the bracket unit 200 is configured to be detachable from and attachable to the bracket joint 130. In the second example, the bracket unit 200 and the bracket joint 130 are integrally formed.

[0158] In one example, the scribing head 100 includes a bracket joint holder 140. In one example, the bracket joint holder 140 is configured to support the bracket assembly 120. In one example, the bracket joint 130 is coupled to the bracket joint holder 140.

[0159] The configurations of the bracket joint 130 and the bracket joint holder 140 are illustrated. In the first example, the bracket joint 130 is configured to be detachable from and attachable to the bracket joint holder 140. In the second example, the bracket joint 130 and the bracket joint holder 140 are integrally formed.

[0160] In one example, the scribing head 100 includes a connecting portion 150. In one example, the connecting portion 150 is configured to connect the bracket joint holder 140 and the base 110. The configuration of the connecting portion 150 is illustrated.

[0161] In the first example, the connecting portion 150 connects the bracket joint holder 140 and the base 110 in such a manner that the bracket joint holder 140 can move relative to the base 110 in a specified direction. In one example, the specified direction includes at least one of a direction perpendicular to the placement surface of the workbench and a direction parallel to the placement surface of the workbench.

[0162] In a second example, the connecting portion 150 connects the bracket joint holder 140 to the base 110 in such a manner that the bracket joint holder 140 cannot move relative to the base 110.

[0163] In one example, the connecting portion 150 includes a guide rail 151 and a slider 152. In one example, the connecting portion 150 is configured such that the bracket joint holder 140 can move relative to the base 110 in a direction perpendicular to the configuration surface with respect to the workbench.

[0164] In one example, the guide rail 151 is provided on one of the base 110 and the bracket joint holder 140. In one example, the slider 152 is provided on the other of the base 110 and the bracket joint holder 140.

[0165] In one example, the scribing head 100 includes a load adjusting portion 160. In one example, the load adjusting portion 160 adjusts the force pressing the scribing wheel 400 against the workpiece. In one example, the load adjusting portion 160 includes an actuator 161 and a bracket 162.

[0166] In one example, the actuator 161 is mounted on the bracket 162.

[0167] In one example, the bracket 162 is mounted on the base 110.

[0168] In one example, the actuator 161 presses the bracket joint holder 140, the guide rail 151 mounted on the bracket joint holder 140, or the slider 152 mounted on the bracket joint holder 140 against the workpiece.

[0169] As an example of the actuator 161, a power cylinder, a solenoid, a motor, a servo motor, or a linear actuator can be cited. As an example of the power cylinder, a hydraulic cylinder, a pneumatic cylinder, a water pressure cylinder, or an electric cylinder can be cited.

[0170] (Bracket unit)

[0171] Refer to Figure 4 , Figure 5 and Figure 8 . The configuration of the bracket unit 200 can be arbitrarily selected. The configuration of the bracket unit 200 is not limited to the illustrated configuration.

[0172] In one example, the bracket unit 200 is supported by the bracket joint 130 in such a manner that it can rotate relative to the bracket joint holder 140 about the central axis of the bracket joint 130.

[0173] In one example, the bracket unit 200 includes a pin 210. In one example, the pin 210 is made of a high-hardness material. As an example of the high-hardness material, single-crystal diamond, polycrystalline diamond, or cemented carbide can be cited.

[0174] In one example, the pin 210 is supported by the wheel bracket 300 in a manner that enables rotation relative to the wheel bracket 300.

[0175] In one example, the pin 210 supports the scribing wheel 400 in a manner that enables rotation of the scribing wheel 400 about the central axis of the pin 210 relative to the pin 210.

[0176] In one example, the pin 210 supports the scribing wheel 400 in a manner that enables movement of the scribing wheel 400 relative to the pin 210 in a direction parallel to the central axis of the pin 210.

[0177] (scribing wheel)

[0178] Refer to Figure 6 and Figure 7 . The configuration of the scribing wheel 400 can be arbitrarily selected. The configuration of the scribing wheel 400 is not limited to the illustrated configuration.

[0179] The central axis of the scribing wheel 400 is referred to as the "wheel central axis 400C". The central plane of the scribing wheel 400 is referred to as the "wheel central plane 400F". In one example, the wheel central plane 400F passes through the center of the scribing wheel 400 in the axial direction of the scribing wheel 400 and is orthogonal to the wheel central axis 400C.

[0180] In one example, the shape of the scribing wheel 400 is symmetric or asymmetric with respect to the wheel central plane 400F.

[0181] In one example, the scribing wheel 400 is radially divided into an inner peripheral portion 410 and an outer peripheral portion 420 with respect to the scribing wheel 400.

[0182] In one example, the inner peripheral portion 410 is provided around the wheel central axis 400C in the radial direction of the scribing wheel 400.

[0183] In one example, the outer peripheral portion 420 is provided outside the inner peripheral portion 410 in the radial direction of the scribing wheel 400. In one example, the thickness of the outer peripheral portion 420 becomes thinner as it goes toward the outer side in the radial direction of the scribing wheel 400.

[0184] In one example, the inner peripheral portion 410 includes a through portion 430. In one example, the through portion 430 is configured to be able to accommodate the pin 210.

[0185] In one example, the through portion 430 includes a hole 431. In one example, the hole 431 penetrates the inner peripheral portion 410 in the axial direction of the scribing wheel 400.

[0186] In one example, the through portion 430 includes a chamfer 432. In one example, the chamfer 432 is formed around the hole 431.

[0187] In one example, the outer peripheral portion 420 includes a tip portion 440 for scribing a workpiece. In one example, the tip portion 440 is provided at the front end portion of the outer peripheral portion 420 in the radial direction of the scribing wheel 400.

[0188] The surface of the scribing wheel 400 is referred to as the "wheel surface 401". The surface of the inner peripheral portion 410 is referred to as the "inner peripheral portion surface 411". The surface of the outer peripheral portion 420 is referred to as the "outer peripheral portion surface 421". In one example, the wheel surface 401 includes the inner peripheral portion surface 411 and the outer peripheral portion surface 421.

[0189] In one example, the inner peripheral portion surface 411 includes a side surface 411A. In one example, the side surface 411A is a base plane. In one example, the side surface 411A is parallel to the wheel center plane 400F.

[0190] In one example, the inner peripheral portion surface 411 includes a curved surface 411B. In one example, the curved surface 411B defines a hole 431. In one example, the curved surface 411B contacts the pin 210.

[0191] In one example, the outer peripheral portion surface 421 is an inclined surface. In one example, the outer peripheral portion surface 421 is inclined with respect to the wheel center plane 400F.

[0192] In one example, the scribing wheel 400 includes a boundary portion 450. In one example, the boundary portion 450 includes an edge formed between the side surface 411A of the inner peripheral portion surface 411 and the outer peripheral portion surface 421, or a portion corresponding to the edge.

[0193] (Base portion and conductive portion)

[0194] Refer to Figure 2 、 Figure 6 and Figure 7 . In one example, the base portion 30 constitutes the main body of the scribing wheel 400. In one example, the base portion 30 is divided into an inner peripheral portion 410 and an outer peripheral portion 420.

[0195] In one example, the conductive portion 40 is formed on at least one of the inner peripheral portion 410 and the outer peripheral portion 420 of the base portion 30. In an example where the conductive portion 40 is formed on the inner peripheral portion 410 and the outer peripheral portion 420 of the base portion 30, the conductive portion 40 is divided into the inner peripheral portion 410 and the outer peripheral portion 420. An example of the constitution of the conductive portion 40 related to the formation range with respect to the base portion 30 (hereinafter referred to as "conductive portion constitution") is illustrated.

[0196] In the first example, the conductive portion 40 is formed on all of the inner peripheral portion 410 of the base portion 30 and on all of the outer peripheral portion 420 of the base portion 30. The inner peripheral portion 410 includes the base portion 30 and the conductive portion 40. The outer peripheral portion 420 includes the base portion 30 and the conductive portion 40.

[0197] In the second example, the conductive portion 40 is formed on a part of the inner peripheral portion 410 of the base portion 30 and on all of the outer peripheral portion 420 of the base portion 30. The inner peripheral portion 410 includes the base portion 30 and the conductive portion 40. The outer peripheral portion 420 includes the base portion 30 and the conductive portion 40.

[0198] In the third example, the conductive portion 40 is formed on all of the inner peripheral portion 410 of the base portion 30 and on a part of the outer peripheral portion 420 of the base portion 30. The inner peripheral portion 410 includes the base portion 30 and the conductive portion 40. The outer peripheral portion 420 includes the base portion 30 and the conductive portion 40.

[0199] In the fourth example, the conductive portion 40 is formed on a part of the inner peripheral portion 410 of the base portion 30 and on a part of the outer peripheral portion 420 of the base portion 30. The inner peripheral portion 410 includes the base portion 30 and the conductive portion 40. The outer peripheral portion 420 includes the base portion 30 and the conductive portion 40.

[0200] In the fifth example, the conductive portion 40 is formed on all of the inner peripheral portion 410 of the base portion 30. The conductive portion 40 is not formed on the outer peripheral portion 420 of the base portion 30. The inner peripheral portion 410 includes the base portion 30 and the conductive portion 40. The outer peripheral portion 420 includes the base portion 30.

[0201] In the sixth example, the conductive portion 40 is formed on a part of the inner peripheral portion 410 of the base portion 30. The conductive portion 40 is not formed on the outer peripheral portion 420 of the base portion 30. The inner peripheral portion 410 includes the base portion 30 and the conductive portion 40. The outer peripheral portion 420 includes the base portion 30.

[0202] In the seventh example, the conductive portion 40 is not formed on the inner peripheral portion 410 of the base portion 30. The conductive portion 40 is formed on all of the outer peripheral portion 420 of the base portion 30. The inner peripheral portion 410 includes the base portion 30. The outer peripheral portion 420 includes the base portion 30 and the conductive portion 40.

[0203] In the eighth example, the conductive portion 40 is not formed on the inner peripheral portion 410 of the base portion 30. The conductive portion 40 is formed on a part of the outer peripheral portion 420 of the base portion 30. The inner peripheral portion 410 includes the base portion 30. The outer peripheral portion 420 includes the base portion 30 and the conductive portion 40.

[0204] In the configurations of the second to eighth examples related to the configuration of the conductive portion, the wheel surface 401 includes the base portion surface 31 and the conductive portion surface 41. The wheel surface 401 is composed of the base portion surface 31 having electrical insulation and the conductive portion surface 41 having electrical conductivity.

[0205] In the second example related to the configuration of the conductive portion, a part of the inner peripheral surface 411 of the base portion surface 31 constitutes the wheel surface 401.

[0206] In the third example related to the configuration of the conductive portion, a part of the outer peripheral surface 421 of the base portion surface 31 constitutes the wheel surface 401.

[0207] In the fourth example related to the configuration of the conductive portion, a part of the inner peripheral surface 411 of the base portion surface 31 and a part of the outer peripheral surface 421 of the base portion surface 31 constitute the wheel surface 401.

[0208] In the fifth example related to the configuration of the conductive portion, the entire outer peripheral surface 421 of the base portion surface 31 constitutes the wheel surface 401.

[0209] In the sixth example related to the configuration of the conductive portion, a part of the inner peripheral surface 411 of the base portion surface 31 and the entire outer peripheral surface 421 of the base portion surface 31 constitute the wheel surface 401.

[0210] In the seventh example related to the configuration of the conductive portion, the entire inner peripheral surface 411 of the base portion surface 31 constitutes the wheel surface 401.

[0211] In the eighth example related to the configuration of the conductive portion, the entire inner peripheral surface 411 of the base portion surface 31 and a part of the outer peripheral surface 421 of the base portion surface 31 constitute the wheel surface 401.

[0212] In one example, the base portion 30 is composed only of an electrical insulator, or is composed of an electrical insulator and an electrical conductor. In one example, the electrical insulator constituting the base portion 30 is a single crystal portion 32 having electrical insulation. Examples of the configuration of the base portion 30 related to electrical characteristics (hereinafter referred to as "base portion configuration") are given.

[0213] In the first example, the interior of the inner peripheral portion 410 of the base portion 30 is composed only of an electrical insulator. An electrical conductor is not formed inside the inner peripheral portion 410 of the base portion 30. The interior of the outer peripheral portion 420 of the base portion 30 is composed only of an electrical insulator. An electrical conductor is not formed inside the outer peripheral portion 420 of the base portion 30.

[0214] In the second example, the interior of the inner peripheral portion 410 of the base portion 30 is composed of an electrical insulator and an electrical conductor. The interior of the outer peripheral portion 420 of the base portion 30 is composed only of an electrical insulator. An electrical conductor is not formed inside the outer peripheral portion 420 of the base portion 30.

[0215] In the third example, the interior of the inner peripheral portion 410 of the base portion 30 is composed only of an electrical insulator. An electrical conductor is not formed inside the inner peripheral portion 410 of the base portion 30. The interior of the outer peripheral portion 420 of the base portion 30 is composed of an electrical insulator and an electrical conductor.

[0216] In the fourth example, the interior of the inner peripheral portion 410 of the base portion 30 is composed of an electrical insulator and an electrical conductor. The interior of the outer peripheral portion 420 of the base portion 30 is composed of an electrical insulator and an electrical conductor.

[0217] Within the range of achieving technical compatibility, the configurations of the first to fourth examples related to the constitution of the base portion allow combinations with the configurations of the first to eighth examples related to the constitution of the conductive portion.

[0218] (Wheel bracket)

[0219] Refer to Figure 8 The configuration of the wheel bracket 300 can be arbitrarily selected. The configuration of the wheel bracket 300 is not limited to the illustrated configuration.

[0220] In one example, the lateral direction, longitudinal direction, and depth direction are defined with respect to the wheel bracket 300. The lateral direction of the wheel bracket 300 is parallel to the X-axis. The longitudinal direction of the wheel bracket 300 is parallel to the Z-axis. The depth direction of the wheel bracket 300 is parallel to the Y-direction.

[0221] Figure 8 The left-right direction of... is parallel to the X-axis. Figure 8 The up-down direction of... is parallel to the Z-axis. With respect to... Figure 8 The vertical direction of... is parallel to the Y-axis.

[0222] In one example, the wheel bracket 300 includes a bracket main body portion 310. In one example, the bracket main body portion 310 is coupled to the bracket joint 130. The configurations of the bracket joint 130 and the bracket main body portion 310 are illustrated.

[0223] In the first example, the bracket main body portion 310 is configured to be detachable from the bracket joint 130. In the second example, the bracket main body portion 310 and the bracket joint 130 are integrally formed.

[0224] In one example, the wheel bracket 300 includes a pin support portion 320. In one example, the pin support portion 320 is located downward with respect to the bracket main body portion 310 in the longitudinal direction of the wheel bracket 300.

[0225] In one example, the pin support portion 320 includes a bottom surface 320F. In one example, the bottom surface 320F faces the workpiece. In one example, a space is formed between the bottom surface 320F and the surface of the workpiece in a state where the scribing wheel 400 is in contact with the workpiece.

[0226] In one example, the pin support portion 320 includes a first pin support portion 321 and a second pin support portion 322. In one example, the pin support portions 321, 322 are spaced apart from each other in the lateral direction of the wheel bracket 300.

[0227] In one example, the wheel bracket 300 includes a wheel placement space 330. In one example, the wheel placement space 330 is formed between the first pin support portion 321 and the second pin support portion 322 in the lateral direction of the wheel bracket 300. In one example, the wheel placement space 330 is formed to be able to place the scribing wheel 400.

[0228] In one example, a minute gap is formed between the side surface 411A of the scribing wheel 400 and the first pin support portion 321 in the lateral direction of the wheel bracket 300.

[0229] In one example, in the direction parallel to the central axis of the pin 210, as the scribing wheel 400 moves relative to the pin 210, the side surface 411A of the scribing wheel 400 may sometimes come into contact with the first pin support portion 321.

[0230] In one example, a minute gap is formed between the side surface 411A of the scribing wheel 400 and the second pin support portion 322 in the lateral direction of the wheel bracket 300.

[0231] In one example, in the direction parallel to the central axis of the pin 210, as the scribing wheel 400 moves relative to the pin 210, the side surface 411A of the scribing wheel 400 may sometimes come into contact with the second pin support portion 322.

[0232] In one example, the pin support portions 321, 322 include pin placement spaces 323. In one example, the pin placement spaces 323 include holes that penetrate the pin support portions 321, 322. In one example, the pin placement spaces 323 are formed to be able to place the pins 210.

[0233] In one example, the shape of the pin 210 is cylindrical. In one example, the pin 210 includes a first end portion 211, a second end portion 212, and an intermediate portion 213.

[0234] In one example, the first end portion 211 is placed in the pin placement space 323 of the first pin support portion 321. In one example, the second end portion 212 of the pin 210 is placed in the pin placement space 323 of the second pin support portion 322.

[0235] In one example, the intermediate portion 213 is disposed between the first end portion 211 and the second end portion 212 in the direction parallel to the central axis of the pin 210. In one example, the intermediate portion 213 is placed in the hole 431 of the scribing wheel 400.

[0236] In one example, the wheel bracket 300 includes an anti - detachment portion 340. In one example, the anti - detachment portion 340 closes the opening of the pin configuration space 323 in such a way that the pin 210 does not move outside the pin support portion 320.

[0237] (Effect)

[0238] As an example of the effects achievable by the tool unit 10 or the diamond tool 20, the following effects can be cited.

[0239] In one example, the diamond tool 20 includes: a base portion 30 including a single - crystal portion 32 made of single - crystal diamond; and a conductive portion 40 formed on the single - crystal portion 32. The conductive portion 40 includes a conductive - portion surface 41 that constitutes the tool surface 21. The base portion 30 is composed only of the single - crystal portion 32 having electrical insulation.

[0240] According to the above configuration, for example, the following effects can be obtained. Since the tool surface 21 has conductivity, the tool surface 21 is not easily charged. The machining chips are not easily attached to the tool surface 21.

[0241] According to the above configuration, for example, the following effects can be further obtained. It is not easy for the workpiece to accumulate between the tool surface 21 and the workpiece to be machined. The reduction of the machining performance of the diamond tool 20 can be suppressed.

[0242] According to the above configuration, for example, the following effects can be further obtained. Since the base portion 30 is composed only of the single - crystal portion 32, the base portion 30 can be formed by low - cost single - crystal diamond.

[0243] In one example, the conductive portion 40 includes hydrogen - terminated diamond 42.

[0244] According to the above configuration, for example, the following effects can be obtained. Since the conductive portion 40 includes hydrogen - terminated diamond 42, the conductivity of the conductive portion 40 becomes higher.

[0245] In one example, the base portion 30 includes a hydrogen - terminated layer 43 and an impurity layer 44. The impurity layer 44 is formed on the single - crystal portion 32. The hydrogen - terminated layer 43 is formed on the impurity layer 44. The hydrogen - terminated layer 43 includes hydrogen - terminated diamond 42.

[0246] According to the above configuration, for example, the following effects can be obtained. Since the conductive portion 40 includes the hydrogen - terminated layer 43 and the impurity layer 44, the conductivity of the conductive portion 40 becomes higher.

[0247] In one example, the conductive - portion surface 41 of the conductive portion 40 constitutes all of the tool surface 21.

[0248] According to the above configuration, for example, the following effects can be obtained. The machining chips are not easily attached to the tool surface 21.

[0249] In one example, the resistivity of the conductive portion is equal to or less than the upper limit resistivity of the conductive portion.

[0250] According to the above configuration, for example, the following effects can be obtained. The conductive portion 40 is not easily charged. The tool surface 21 is not easily charged.

[0251] In one example, the thickness of the conductive portion 40 is equal to or less than the upper limit thickness of the conductive portion.

[0252] According to the above configuration, for example, the following effects can be obtained. It is not easy to generate a difference between the shape of the base portion surface 31 of the diamond tool 20 in the base state and the shape of the conductive portion surface 41. This helps to suppress, for example, a decrease in the machining performance of the diamond tool 20 as the conductive portion 40 is synthesized.

[0253] According to the above configuration, for example, the following effects can be further obtained. The time required for synthesizing the conductive portion 40 is shortened.

[0254] In one example, the diamond tool 20 is a scribing wheel 400.

[0255] According to the above configuration, for example, the following effects can be obtained. When scribing a workpiece with the scribing wheel 400, machining chips are not easily attached to the scribing wheel 400.

[0256] According to the above configuration, for example, the following effects can be further obtained. The machining quality and machining accuracy related to the machining of the workpiece are improved. The life of the scribing wheel 400 is prolonged.

[0257] In one example, the tool unit 10 includes a diamond tool 20 and a tool support portion 11 that supports the diamond tool 20.

[0258] According to the above configuration, for example, the following effects can be obtained. The tool surface 21 is not easily charged. Machining chips are not easily attached to the tool surface 21. Machining chips are not easily retained between the diamond tool 20 and the tool support portion 11.

[0259] According to the above configuration, for example, the following effects can be further obtained. Machining chips are not easily attached to the tool support portion 11.

[0260] According to the above configuration, for example, the following effects can be further obtained. The machining quality and machining accuracy related to the machining of the workpiece are improved. The life of the scribing wheel 400 is prolonged.

[0261] (Effect 2)

[0262] As an example of the effects obtained by the tool unit 10 or the diamond tool 20, the following effects can be cited.

[0263] In one example, the base portion surface 31 is composed of a single crystal portion 32. The conductive portion 40 is formed on the base portion surface 31.

[0264] According to the above configuration, for example, the following effects can be obtained. The roughness of the conductive portion surface 41 becomes smaller.

[0265] In one example, the thickness of the conductive portion 40 is equal to or greater than the lower limit conductive portion thickness.

[0266] According to the above configuration, for example, the following effects can be obtained. It is easy to form the conductive portion 40 having conductivity that helps to suppress the charging of the tool surface 21.

[0267] According to the above configuration, for example, the following effects can be further obtained. Even when the conductive portion surface 41 is worn, it is easy to maintain the state where the tool surface 21 is composed of the conductive portion surface 41.

[0268] In one example, the hydrogen termination layer thickness is equal to or greater than the lower limit hydrogen termination layer thickness.

[0269] According to the above configuration, for example, the following effects can be obtained. It is easy to form the hydrogen termination layer 43 having conductivity that helps to suppress the charging of the tool surface 21.

[0270] According to the above configuration, for example, the following effects can be further obtained. Even when the conductive portion surface 41 is worn, it is easy to maintain the state where the tool surface 21 is composed of the conductive portion surface 41.

[0271] In one example, the hydrogen termination layer thickness is equal to or less than the upper limit hydrogen termination layer thickness.

[0272] According to the above configuration, for example, the following effects can be obtained. It is not easy to generate a difference between the shape of the base portion surface 31 of the diamond tool 20 in the base state and the shape of the conductive portion surface 41. This helps, for example, to suppress the reduction in the machining performance of the diamond tool 20 as the conductive portion 40 is synthesized.

[0273] According to the above configuration, for example, the following effects can be further obtained. The time taken for the synthesis of the conductive portion 40 becomes shorter.

[0274] In one example, the impurity layer thickness is equal to or greater than the lower limit impurity layer thickness.

[0275] According to the above configuration, for example, the following effects can be obtained. It is easy to form the impurity layer 44 having conductivity that helps to suppress the charging of the tool surface 21.

[0276] According to the above configuration, for example, the following effects can be further obtained. Even when the surface 41 of the conductive portion is worn, it is easy to maintain the state in which the tool surface 21 is constituted by the surface 41 of the conductive portion.

[0277] In one example, the thickness of the impurity layer is equal to or less than the upper limit impurity layer thickness.

[0278] According to the above configuration, for example, the following effects can be obtained. It is not easy to generate a difference between the shape of the base portion surface 31 of the diamond tool 20 in the base state and the shape of the conductive portion surface 41. This helps to suppress, for example, the reduction in the machining performance of the diamond tool 20 as the conductive portion 40 is synthesized.

[0279] According to the above configuration, for example, the following effects can be further obtained. The time taken for the synthesis of the conductive portion 40 is shortened.

[0280] In one example, the concentration of the carbon source in the source gas is within a specified carbon source concentration range.

[0281] According to the above configuration, for example, the following effects can be obtained. The conductive portion 40 is easily synthesized appropriately.

[0282] In one example, the impurity source concentration is within a specified impurity source concentration range.

[0283] According to the above configuration, for example, the following effects can be obtained. The impurity layer 44 is easily synthesized appropriately.

[0284] In one example, the wire temperature is maintained within a specified wire temperature range.

[0285] According to the above configuration, for example, the following effects can be obtained. The conductive portion 40 is easily synthesized appropriately.

[0286] (Effect 3)

[0287] As an example of the effects obtained by the support unit 200 or the scribing wheel 400, the following effects can be cited.

[0288] In one example, the conductive portion surface 41 of the conductive portion 40 constitutes part or all of the wheel surface 401.

[0289] According to the above configuration, for example, the following effects can be obtained. The machining chips are not easily attached to the wheel surface 401. It is not easy for machining chips to accumulate between the wheel surface 401 and the wheel support 300.

[0290] According to the above configuration, for example, the following effects can be further obtained. The rotational performance of the scribing wheel 400 is improved.

[0291] According to the above configuration, for example, the following effects can be further obtained. The processing quality and processing accuracy related to the processing of the workpiece are improved. The lifespan of the scribing wheel 400 becomes longer.

[0292] According to the above configuration, for example, the following effects can be further obtained. As an example of an index related to the rotatability of the scribing wheel 400, the coefficient of friction related to the frictional force generated between the scribing wheel 400 and the workpiece can be selected.

[0293] In the scribing process performed by the scribing device, as the distance that the scribing wheel 400 travels on the workpiece increases, the coefficient of friction does not easily increase. In one example, when the distance that the scribing wheel 400 travels on the workpiece is below a specified distance, the coefficient of friction does not increase.

[0294] According to the above configuration, for example, the following effects can be further obtained. Broken glass does not easily adhere to the bottom surface 320F of the pin support portion 320.

[0295] In one example, the conductive portion surface 41 of the scribing wheel 400 constitutes part or all of the inner peripheral portion surface 411.

[0296] According to the above configuration, for example, the following effects can be obtained. Processing chips do not easily adhere to the inner peripheral portion surface 411. Processing chips do not easily accumulate between the inner peripheral portion surface 411 and the pin support portion 320.

[0297] According to the above configuration, for example, the following effects can be further obtained. The rotatability of the scribing wheel 400 is improved.

[0298] According to the above configuration, for example, the following effects can be further obtained. The processing quality and processing accuracy related to the processing of the workpiece are improved. The lifespan of the scribing wheel 400 becomes longer.

[0299] In one example, the conductive portion surface 41 of the scribing wheel 400 constitutes part or all of the curved surface 411B of the inner peripheral surface 411 of the hole 431 of the specified through portion 430.

[0300] According to the above configuration, for example, the following effects can be obtained. Processing chips do not easily adhere to the curved surface 411B of the inner peripheral portion surface 411. Processing chips do not easily accumulate between the curved surface 411B and the pin 210.

[0301] According to the above configuration, for example, the following effects can be further obtained. The rotatability of the scribing wheel 400 is improved.

[0302] According to the above configuration, for example, the following effects can be further obtained. The processing quality and processing accuracy related to the processing of the workpiece are improved. The lifespan of the scribing wheel 400 becomes longer.

[0303] In addition, the ways in which the diamond tools and tool units related to the present invention can be configured are not limited to the descriptions set forth in the above embodiments. The diamond tools and tool units related to the present invention can be configured in ways different from those exemplified in the embodiments. As examples thereof, there may be mentioned ways in which a part of the configuration of each embodiment is replaced, changed, or omitted, or ways in which a new configuration is added to each embodiment.

[0304] Description of Reference Numerals

[0305] 10: Tool unit

[0306] 11: Tool support part

[0307] 20: Diamond tool

[0308] 30: Base part

[0309] 32: Single crystal part

[0310] 40: Conductive part

[0311] 41: Surface of conductive part

[0312] 42: Hydrogen-terminated diamond

[0313] 43: Hydrogen-terminated layer

[0314] 44: Impurity layer

[0315] 400: Scoring wheel.

Claims

1. A diamond tool, comprising: A base portion including a single crystal portion composed of single crystal diamond; and A conductive portion formed on the single crystal portion, The conductive portion includes a conductive portion surface constituting the surface of the diamond tool, The base portion is composed only of the single crystal portion having electrical insulation.

2. The diamond tool according to claim 1, Wherein, The conductive portion surface includes hydrogen-terminated diamond.

3. The diamond tool according to claim 2, Wherein, The conductive portion includes a hydrogen-terminated layer and an impurity layer, The impurity layer is formed on the single crystal portion, The hydrogen-terminated layer is formed on the impurity layer and includes the hydrogen-terminated diamond.

4. The diamond tool according to claim 3, Wherein, The conductive portion surface constitutes all of the surface of the diamond tool.

5. The diamond tool according to claim 1, Wherein, The resistivity of the conductive portion is 10 Ωcm or less.

6. The diamond tool according to claim 1, Wherein, The thickness of the conductive portion is 2000 nm or less.

7. The diamond tool according to any one of claims 1 to 6, Wherein, The diamond tool is a scribing wheel.

8. A tool unit, comprising: The diamond tool according to any one of claims 1 to 6; and A tool support portion for supporting the diamond tool.

Images