Vapor phase transport deposition apparatus and vapor deposition method
By using independently arranged carrier gas preheating unit and source material vaporization unit, the problem of carrier gas carrying insufficiently sublimated solid source material was solved, improving film quality and deposition efficiency, and enabling control over film morphology.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HUAWEI DIGITAL POWER TECH CO LTD
- Filing Date
- 2025-03-03
- Publication Date
- 2026-07-24
Smart Images
Figure CN120099462B_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of thin film preparation technology, and in particular to vapor transport deposition apparatus and vapor deposition method. Background Technology
[0002] Dry deposition processes offer advantages such as uniform deposition, high film quality, and conformal deposition. A common implementation method is vapor phase transport deposition (VPD), typically used for semiconductor thin films, such as cadmium telluride (CdTe), copper indium gallium selenide (CIGS), and perovskite films. VPD processes are usually performed in a VPD apparatus, which includes a carrier gas delivery pipe and a source material vaporization unit. The source material vaporization unit sublimates the solid source material to form a gaseous source material. The carrier gas delivery pipe transports the carrier gas, carrying the gaseous source material to the substrate for film deposition.
[0003] The vapor transport deposition apparatus provided by the related technology has a carrier gas delivery pipeline connected to the source material vaporization unit. Thus, the carrier gas directly carries the source material powder into the source material vaporization unit, or the carrier gas directly enters the source material vaporization unit containing the source material powder. Finally, the carrier gas carries the sublimated source material atmosphere and transports it to the substrate for deposition.
[0004] However, the vapor deposition apparatus involved in the related technology has two main problems. First, the carrier gas easily purges and carries away insufficiently sublimated solid source material powder, leading to a decrease in the quality of the deposited film. Second, the temperature of the carrier gas is easily assimilated by the internal temperature of the source material vaporization unit, making it difficult to regulate the vapor deposition process by adjusting the carrier gas temperature. In other words, the temperature of the carrier gas is difficult to use as a control factor to adjust the morphology of the deposited film. Summary of the Invention
[0005] This disclosure provides a vapor transport deposition apparatus and a vapor deposition method, which can solve the technical problems existing in related technologies. Specifically, the technical solution is as follows.
[0006] On one hand, a vapor transport deposition apparatus is provided, comprising: a carrier gas preheating unit, a source material vaporization unit, a vapor distribution unit, and a deposition unit; the carrier gas preheating unit has a carrier gas outlet, which is connected to a chamber of the vapor distribution unit, and the carrier gas preheating unit is used to deliver preheated carrier gas to the chamber of the vapor distribution unit through the carrier gas outlet; the source material vaporization unit has a vapor outlet, which is connected to a chamber of the vapor distribution unit, and the source material vaporization unit is used to deliver source material vapor to the chamber of the vapor distribution unit through the vapor outlet; the vapor distribution unit has a vapor distribution outlet, which is arranged facing the deposition unit; wherein the vapor outlet is located downstream of the carrier gas outlet, and the vapor distribution outlet is located downstream of the vapor outlet, such that the carrier gas carries the source material vapor to the vapor distribution outlet.
[0007] The vapor deposition apparatus provided in this embodiment has a carrier gas preheating unit and a source material vaporization unit arranged independently. The carrier gas preheating unit heats the carrier gas to a specific temperature and delivers the preheated carrier gas to the chamber of the vapor distribution unit through the carrier gas outlet. Since the vapor outlet is located downstream of the carrier gas outlet, the source material vapor generated by the source material vaporization unit can mix with the carrier gas after entering the chamber of the vapor distribution unit and be carried by the carrier gas. Under the carrying of the carrier gas, the source material vapor is delivered to the deposition unit through the vapor distribution outlet for vapor deposition. Therefore, on the one hand, since no preheated carrier gas is introduced into the source material vaporization unit, it effectively avoids the insufficiently sublimated solid source material being blown outside the source material vaporization unit by the preheated carrier gas, thereby avoiding a reduction in film quality. On the other hand, the temperature of the preheated carrier gas is not affected by the temperature of the source material vaporization unit, which effectively avoids the carrier gas being assimilated by the temperature of the source material vaporization unit before vapor deposition. This ensures that the carrier gas can participate in vapor deposition based on a specific temperature, which not only helps to improve the coating rate, but also, as an adjustable factor, the carrier gas temperature can be changed by altering the heating temperature of the carrier gas preheating unit to change the temperature environment when the carrier gas carries the source material vapor to the deposition unit, thereby affecting the vapor deposition process and achieving the purpose of controlling the morphology of the formed film.
[0008] In some possible implementations, the carrier gas preheating unit includes a carrier gas chamber, a carrier gas delivery pipe communicating with the carrier gas chamber, and a first heating element assembled to the carrier gas delivery pipe; the carrier gas chamber is used to store the carrier gas, the carrier gas delivery pipe is used to deliver the carrier gas, the first heating element is used to heat the carrier gas delivered in the carrier gas delivery pipe, and the first heating element is also electrically connected to the control system of the vapor phase transport deposition apparatus, the control system being used to control the operation of the first heating element.
[0009] In some possible implementations, the carrier gas preheating unit further includes a carrier gas flow rate regulator disposed in the carrier gas delivery pipeline, and the carrier gas flow rate regulator is also electrically connected to the control system of the vapor phase deposition apparatus. By controlling the carrier gas temperature and flow rate, combined with the vaporization rate of the source material vaporization unit, the vapor phase deposition rate can be precisely adjusted to meet the requirements of different thin film preparations.
[0010] In some possible implementations, the source material vaporization unit includes: a vaporization chamber, a second heating element assembled to the vaporization chamber, the vaporization chamber being used to generate the source material vapor and having the vapor outlet, the second heating element being electrically connected to a control system of the vapor transport deposition apparatus, the control system being used to control the operation of the second heating element.
[0011] In some possible implementations, the carrier gas preheating unit includes a carrier gas delivery pipe, which is partially located within the chamber of the vapor distribution unit. The end of the segment of the carrier gas delivery pipe located within the chamber of the vapor distribution unit is closed, and multiple carrier gas outlets are spaced apart along the axial direction on the pipe wall. The source material vaporization unit includes a vaporization chamber, which is located within the chamber of the vapor distribution unit, and the vapor outlet is located within the vaporization chamber. The advantage of this implementation is that it allows for a more compact overall structure of the vapor transport deposition apparatus, reduces the number of connecting parts, simplifies the structure of the vapor transport deposition apparatus, and improves its operational reliability.
[0012] In some possible implementations, the carrier gas delivery conduit is arbitrarily positioned within the chamber of the vapor distribution unit. The carrier gas delivery conduit can be rotated to adjust the carrier gas purging angle, avoiding uneven mixing or localized airflow turbulence.
[0013] In some possible implementations, the vapor distribution unit has a first baffle and a second baffle, at least one of which is arranged at an angle, and a transmission channel is formed between the first baffle and the second baffle for the transmission of carrier gas and source material vapor; the dimension of the second end of the transmission channel near the vapor distribution outlet is smaller than the dimension of the first end of the transmission channel near the source material gasification unit.
[0014] The inclined baffles guide the carrier gas and source material vapor, allowing them to flow along the set transmission channels, avoiding airflow turbulence, and ensuring that the two gases can be mixed and transmitted more orderly, which is beneficial to improving the stability and controllability of the gas phase transmission process.
[0015] In some possible implementations, the vaporization chamber is a crucible, with a slit at the top serving as the vapor outlet. By using the slit as the vapor outlet, the slit facilitates the directional and uniform transport of the sublimation atmosphere, which is beneficial for the uniform deposition of source material vapor on the substrate, forming a thin film with uniform thickness and composition, thereby improving film quality.
[0016] In some possible implementations, a mixing structure is provided in the chamber of the vapor distribution unit. The mixing structure is located downstream of the vapor outlet and upstream of the vapor distribution outlet to promote the mixing of carrier gas and source material vapor, thereby improving the uniformity and consistency of the subsequent deposition reaction.
[0017] In some possible implementations, both the carrier gas preheating unit and the source material vaporization unit are located outside the vapor distribution unit; the source material vaporization unit includes a vaporization chamber with a vapor outlet, and a source material vaporizer is disposed inside the vaporization chamber for sublimating the solid source material; the vapor transport deposition apparatus further includes a distributor, which is at least partially located inside the chamber of the vapor distribution unit, has a discharge port located above the vapor distribution outlet, and is connected to both the carrier gas outlet of the carrier gas preheating unit and the vapor outlet of the source material vaporization unit.
[0018] The advantages of this implementation scheme are as follows: the carrier gas preheating unit and the source material gasification unit are located outside the vapor distribution unit chamber, which facilitates the maintenance and replacement of both. On the other hand, it is more conducive to the flexible layout and expansion of the vapor phase transport deposition device, so as to flexibly arrange the location and number of the carrier gas preheating unit and the material gasification unit according to different process requirements and site conditions. Furthermore, it is convenient to monitor and control the operation process of the carrier gas preheating unit and the source material gasification unit.
[0019] In some possible implementations, the distributor is tubular, with multiple outlets spaced axially along the tube wall at its closed ends. This design offers advantages such as simple structure, good mixing effect, and high gas distribution uniformity, ensuring that the carrier gas carrying the source material vapor is uniformly delivered to the chamber of the vapor distribution unit.
[0020] In some possible implementations, the vapor phase transport deposition apparatus further includes: a carrier gas redistributor located inside and above the chamber of the vapor distribution unit; the carrier gas redistributor having a carrier gas inlet and a carrier gas distribution port, the carrier gas inlet being connected to the carrier gas outlet of the carrier gas preheating unit, and the carrier gas distribution port being used to supply carrier gas to the chamber of the vapor distribution unit.
[0021] By further configuring the carrier gas redistributor, the carrier gas can be redistributed and regulated, and a more uniform flow field can be formed in the chamber, allowing it to fully contact and mix with the source material vapor, thereby improving mixing uniformity and efficiency.
[0022] In some possible implementations, both the carrier gas preheating unit and the source material vaporization unit are located outside the vapor distribution unit; the source material vaporization unit includes a vaporization chamber located outside the vapor distribution unit and having a vapor outlet, and a source material vaporizer is disposed inside the vaporization chamber for sublimating the solid source material; the vapor transport deposition apparatus further includes a carrier gas distributor and a gaseous source distributor, the carrier gas distributor being located upstream of the gaseous source distributor, the inlet of the carrier gas distributor being connected to the carrier gas outlet of the carrier gas preheating unit, and the carrier gas distributor also having a carrier gas distribution outlet, the inlet of the gaseous source distributor being connected to the vapor outlet of the source material vaporization unit, and the gaseous source distributor also having a gaseous source distribution outlet.
[0023] The advantages of the above implementation scheme are as follows: the carrier gas distributor can evenly and precisely distribute the carrier gas to various areas according to set parameters such as flow rate and pressure; the gas source distributor can also play the same role for gaseous source materials; and both the carrier gas distributor and the gas source distributor can be controlled independently. Therefore, precise gas distribution and thorough mixing are achieved through the carrier gas distributor and the gas source distributor, making the deposition process more uniform, stable, and controllable, and improving the compositional uniformity and consistency of the deposited film.
[0024] In some possible implementations, the carrier gas distributor is tubular, with its end closed, and a plurality of carrier gas distribution outlets are spaced apart along the axial direction on the tube wall of the carrier gas distributor; the gas source distributor is tubular, with its end closed, and a plurality of gas source distribution outlets are spaced apart along the axial direction on the tube wall of the gas source distributor.
[0025] This scheme has the advantages of simple structure, good mixing effect and high gas distribution uniformity, so as to ensure that the carrier gas carries the source material vapor evenly to the chamber of the vapor distribution unit.
[0026] In some possible implementations, the deposition unit includes a deposition chamber and a stage, with the vapor distribution unit located inside the deposition chamber, or the vapor distribution unit is fixedly connected to the deposition chamber such that the vapor distribution outlet is accommodated inside the deposition chamber; the stage is located inside the deposition chamber and arranged facing the vapor distribution outlet, and the stage is used to support the substrate.
[0027] The stage is movable to facilitate its entry into or exit from the deposition chamber, thereby enabling convenient manipulation of the substrate on it. In application, the carrier gas carrying the source material vapor is delivered from the vapor distribution outlet to the substrate in the deposition chamber for vapor deposition.
[0028] On the other hand, a vapor phase deposition method is provided, which is applied to any of the vapor phase transport deposition apparatuses described above. Attached Figure Description
[0029] Figure 1 A schematic diagram showing the arrangement of components in a first exemplary vapor phase transport deposition apparatus provided for an embodiment of this disclosure;
[0030] Figure 2 A schematic diagram showing the arrangement of components in a second exemplary vapor phase transport deposition apparatus provided in this disclosure embodiment;
[0031] Figure 3 A cross-sectional view of an exemplary vapor transport deposition apparatus provided for embodiments of this disclosure;
[0032] Figure 4 for Figure 3 A schematic diagram of an exemplary structure of the vapor transport deposition apparatus shown.
[0033] Figure 5 A cross-sectional view of another exemplary vapor phase transport deposition apparatus provided in this disclosure embodiment;
[0034] Figure 6 for Figure 5 A schematic diagram of an exemplary structure of the vapor transport deposition apparatus shown.
[0035] Figure 7 A cross-sectional view of yet another exemplary vapor transport deposition apparatus provided in this disclosure embodiment;
[0036] Figure 8 A cross-sectional view of yet another exemplary vapor transport deposition apparatus provided for embodiments of this disclosure;
[0037] Figure 9 A schematic diagram showing the arrangement of components in a third exemplary vapor phase transport deposition apparatus provided in this disclosure embodiment;
[0038] Figure 10 This is a schematic diagram showing the arrangement of components in a fourth exemplary vapor phase transport deposition apparatus provided in an embodiment of this disclosure.
[0039] The reference numerals in the attached figures represent:
[0040] 100. Carrier gas preheating unit;
[0041] 10. Carrier gas outlet; 11. Carrier gas chamber; 12. Carrier gas delivery pipeline; 13. First heating element;
[0042] 200. Source material gasification unit;
[0043] 20. Steam outlet; 21. Vaporization chamber; 22. Second heating element; 23. Source material vaporizer;
[0044] 300. Steam distribution unit;
[0045] 30. Steam distribution outlet; 31. First baffle; 32. Second baffle; 33. Distributor; 331. Discharge outlet;
[0046] 34. Carrier gas redistributor; 341. Carrier gas inlet; 342. Carrier gas distribution port;
[0047] 35. Carrier gas distributor; 351. Carrier gas distribution outlet; 36. Gas source distributor; 361. Gas source distribution outlet;
[0048] 400, sedimentary unit;
[0049] 40. Substrate; 41. Deposition chamber; 42. Stage. Detailed Implementation
[0050] The technical solutions of the embodiments of this disclosure will be further described below with reference to the accompanying drawings. When the following description involves the accompanying drawings, it should be understood that the terms "upper," "lower," "top," "bottom," "inner," "outer," "axial," and "circumferential," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. For example, the orientation of the deposition unit can be defined as being located below the vapor phase transport deposition device.
[0051] Perovskite thin-film solar cells are a novel type of solar cell, exhibiting high photoelectric conversion efficiency, high open-circuit voltage, and low energy loss, thus possessing significant application potential. These cells utilize a perovskite thin film as the light-absorbing layer, and the quality of this film has a crucial impact on the photoelectric performance of the perovskite thin-film solar cell. Parameters used to evaluate the quality of perovskite films include the morphology, uniformity, and crystallinity of the absorption layer, and these quality parameters are largely influenced by the fabrication process.
[0052] Dry deposition processes offer advantages such as uniform deposition, high film quality, and conformal deposition. A common implementation method is vapor phase transport deposition (VPD), typically used for semiconductor thin films, such as cadmium telluride (CdTe), copper indium gallium selenide (CIGS), and perovskite films. VPD processes are usually performed in a VPD apparatus, which includes a carrier gas delivery pipe and a source material vaporization unit. The source material vaporization unit sublimates the solid source material to form a gaseous source material. The carrier gas delivery pipe transports the carrier gas, carrying the gaseous source material to the substrate for film deposition.
[0053] The vapor transport deposition apparatus provided by the related technology has a carrier gas delivery pipeline connected to the source material vaporization unit. Thus, the carrier gas directly carries the source material powder into the source material vaporization unit, or the carrier gas directly enters the source material vaporization unit containing the source material powder. Finally, the carrier gas carries the sublimated source material atmosphere and transports it to the substrate for deposition.
[0054] However, the vapor deposition apparatus involved in the related technology has two main problems. First, the carrier gas easily purges and carries away insufficiently sublimated solid source material powder, leading to a decrease in the quality of the deposited film. Second, the temperature of the carrier gas is easily assimilated by the internal temperature of the source material vaporization unit, making it difficult to regulate the vapor deposition process by adjusting the carrier gas temperature. In other words, the temperature of the carrier gas is difficult to use as a control factor to adjust the morphology of the deposited film.
[0055] To address the technical problems existing in related technologies, this disclosure provides a novel vapor phase transport deposition apparatus, as shown in the attached figure. Figure 1 As shown, the vapor transport deposition apparatus includes: a carrier gas preheating unit 100, a source material vaporization unit 200, a vapor distribution unit 300, and a deposition unit 400. The carrier gas preheating unit 100 has a carrier gas outlet 10, which is connected to a chamber of the vapor distribution unit 300. The carrier gas preheating unit 100 is used to supply preheated carrier gas to the chamber of the vapor distribution unit 300 through the carrier gas outlet 10. The source material vaporization unit 200 has a vapor outlet 20, which is connected to a chamber of the vapor distribution unit 300. The source material vaporization unit 200 is used to supply source material vapor to the chamber of the vapor distribution unit 300 through the vapor outlet 20. The vapor distribution unit 300 has a vapor distribution outlet 30 on its shell wall, which faces the deposition unit 400. The vapor outlet 20 is located downstream of the carrier gas outlet 10, and the vapor distribution outlet 30 is located downstream of the vapor outlet 20, allowing the carrier gas to carry the source material vapor to the vapor distribution outlet 30.
[0056] In this embodiment of the disclosure, the terms "upstream" and "downstream" are based on the material transport path. When material is transported along the transport path, it can be considered as being transported from upstream to downstream. That is, the starting point of the transport path is upstream relative to the ending point of the transport path. For example, if component A is upstream of the transport path and component B is downstream of the transport path, it means that material is transported from component A to component B. This has no direct correspondence with the absolute positions of component A and component B. For example, in this case, the absolute position of component A could be above the absolute position of component B, or it could be below the absolute position of component B.
[0057] The vapor transport deposition apparatus provided in this embodiment operates as follows: a carrier gas preheating unit 100 heats the carrier gas and delivers it to a vapor distribution unit 300. A source material vaporization unit 200 sublimates the source material to form source material vapor, which is then delivered to the chamber of the vapor distribution unit 300. Since the vapor outlet 20 is located downstream of the carrier gas outlet 10, the source material vapor is carried by the preheated carrier gas and thoroughly mixed with it during transport. Finally, it is ejected from the vapor distribution outlet 30 of the vapor distribution unit 300 onto the substrate 40 of the deposition unit 400, achieving thin film deposition. During this process, since the carrier gas preheating unit 100 and the source material vaporization unit 200 are arranged independently, no preheated carrier gas is introduced into the source material vaporization unit 200. That is, the preheated carrier gas and the source material vapor meet and mix within the vapor distribution unit 300. Furthermore, vapor outlet 20 is located downstream of carrier gas outlet 10, and vapor distribution outlet 30 is located downstream of vapor outlet 20. Therefore, when the source material vapor enters the chamber of vapor distribution unit 300 from vapor outlet 20, the carrier gas flowing at a certain velocity and direction provides a stable flow environment for the source material vapor, promoting more uniform dispersion and mixing within the chamber. This avoids situations where the local concentration of source material vapor is too high or too low, which is beneficial for forming a uniform film during subsequent deposition. Finally, the source material vapor, carried by the carrier gas, enters the downstream vapor distribution outlet 30, ensuring that the source material vapor can stably and continuously reach the deposition unit 400, thereby guaranteeing the efficiency and quality of vapor phase deposition.
[0058] In summary, the vapor deposition apparatus provided in this embodiment has its carrier gas preheating unit 100 and source material vaporization unit 200 arranged independently. The carrier gas preheating unit 100 heats the carrier gas to a specific temperature and delivers the preheated carrier gas to the chamber of the vapor distribution unit 300 through the carrier gas outlet 10. Since the vapor outlet 20 is located downstream of the carrier gas outlet 10, the source material vapor generated by the source material vaporization unit 200 can mix with the carrier gas after entering the chamber of the vapor distribution unit 300 and be carried by the carrier gas. Under the carrying of the carrier gas, the source material vapor is delivered to the deposition unit 400 for vapor deposition through the vapor distribution outlet 30. Therefore, on the one hand, since no preheated carrier gas is introduced into the source material vaporization unit 200, it effectively avoids the insufficiently sublimated solid source material being blown out of the source material vaporization unit 200 by the preheated carrier gas, thereby avoiding a reduction in film quality. On the other hand, the temperature of the preheated carrier gas is not affected by the temperature of the source material vaporization unit 200, which effectively avoids the carrier gas being assimilated by the temperature of the source material vaporization unit 200 before vapor deposition, ensuring that the carrier gas can participate in vapor deposition based on a specific temperature. This not only helps to improve the coating rate, but also, as an adjustable factor, the carrier gas temperature can be changed by altering the heating temperature of the carrier gas preheating unit 100 to change the temperature environment when the carrier gas carries the source material vapor to the deposition unit 400, thereby affecting the vapor deposition process and achieving the purpose of controlling the morphology of the formed film.
[0059] See Figure 2 The carrier gas preheating unit 100 includes a carrier gas chamber 11, a carrier gas delivery pipe 12 communicating with the carrier gas chamber 11, and a first heating element 13 assembled to the carrier gas delivery pipe 12. The carrier gas chamber 11 is used to store carrier gas, the carrier gas delivery pipe 12 is used to deliver carrier gas and the carrier gas delivery pipe 12 is provided with a carrier gas outlet 10, the first heating element 13 is used to heat the carrier gas delivered in the carrier gas delivery pipe 12, and the first heating element 13 is also electrically connected to the control system of the vapor phase transport deposition apparatus. The control system is used to control the operation of the first heating element 13.
[0060] For example, the first heating element 13 can be a resistance wire, heating belt, heating jacket, etc. By adjusting the heating power of the first heating element 13 through the control system, the temperature of the carrier gas output by the carrier gas preheating unit 100 can be adjusted.
[0061] Furthermore, to achieve precise control of the carrier gas temperature, a temperature sensor (e.g., thermocouple, RTD, etc.) can be installed inside the carrier gas delivery pipeline 12. The temperature sensor is electrically connected to the control system and is used to monitor the carrier gas temperature in real time and feed the temperature signal back to the control system. The control system compares the preset temperature value with the actual carrier gas temperature value and automatically adjusts the heating power of the first heating element 13 to stabilize the carrier gas temperature at the preset temperature value.
[0062] In this embodiment, not only can the carrier gas temperature be used as a factor to regulate the vapor deposition process, but the carrier gas flow rate (i.e., flow rate) can also be used as a regulating factor. For example, by controlling the carrier gas temperature and flow rate, combined with the vaporization rate of the source material vaporization unit 200, the vapor deposition rate can be precisely adjusted to meet the requirements of different thin film preparations. This achieves the goal of promoting the uniform adsorption and growth of source material vapor on the substrate 40 based on a suitable carrier gas temperature and flow rate, thereby facilitating the formation of thin films that are dense, flat, or have specific microstructures.
[0063] To address the above technical solution, the carrier gas preheating unit 100 may further include a carrier gas flow rate regulator disposed in the carrier gas delivery pipeline 12, and the carrier gas flow rate regulator may also be electrically connected to the control system of the gas phase transport deposition device.
[0064] The carrier gas flow regulating device may include an electrically controlled valve and a flow sensor. The electrically controlled valve is electrically connected to the control system of the gas-phase transport deposition apparatus. The electrically controlled valve can adjust the flow cross-sectional area of the carrier gas by changing the valve opening, thereby controlling the carrier gas flow rate. The control system is used to adjust the opening of the electrically controlled valve based on the carrier gas flow rate measured by the flow sensor, thereby achieving precise control of the carrier gas flow rate.
[0065] In this embodiment of the disclosure, see Figure 2 The source material vaporization unit 200 includes: a vaporization chamber 21 and a second heating element 22 assembled to the vaporization chamber 21. The vaporization chamber 21 is used to generate and transport source material vapor and is provided with a vapor outlet 20. The second heating element 22 is also electrically connected to the control system of the vapor transport deposition apparatus. The control system is used to control the operation of the second heating element 22.
[0066] For example, the vaporization chamber 21 can be a crucible, an evaporation boat, or a chamber containing a crucible or an evaporation boat. The second heating element 22 can be a resistance heater (e.g., a resistance wire), an infrared heater, a radio frequency heater, an electron beam heater, a microwave heater, etc. The second heating element 22 can be disposed on the inner or outer wall of the vaporization chamber 21. By adjusting the heating power of the second heating element 22 through the control system, the source material vaporization unit 200 can achieve full vaporization treatment of the source material.
[0067] For any of the aforementioned vapor phase transport deposition apparatuses, the positional relationship between the carrier gas preheating unit 100, the source material gasification unit 200, and the vapor distribution unit 300 can be further defined as follows.
[0068] In some implementation schemes (1), see Figure 3 and Figure 4The carrier gas preheating unit 100 includes a carrier gas delivery pipe 12, which is partially located within the chamber of the steam distribution unit 300. The end of the section of the carrier gas delivery pipe 12 located within the chamber of the steam distribution unit 300 is closed, and multiple carrier gas outlets 10 are spaced apart along the axial direction on the pipe wall. The source material gasification unit 200 includes a gasification chamber 21 loaded with solid source material. The gasification chamber 21 is located within the chamber of the steam distribution unit 300, and a steam outlet 20 is opened in the gasification chamber 21.
[0069] For implementation scheme (1), its carrier gas preheating unit 100 is as shown above, including a carrier gas chamber 11, a carrier gas conveying pipe 12 connected to the carrier gas chamber 11, and a first heating element 13 assembled to the carrier gas conveying pipe 12. The downstream pipe section of the carrier gas conveying pipe 12 is located in the cavity of the steam distribution unit 300, and the end of the downstream pipe section of the carrier gas conveying pipe 12 is closed. Multiple carrier gas outlets 10 are provided on the pipe wall of the downstream pipe section of the carrier gas conveying pipe 12, so that the preheating carrier gas is evenly distributed by the multiple carrier gas outlets 10.
[0070] The working principle of the above implementation scheme (1) is as follows: The carrier gas preheating unit 100 directly delivers preheated carrier gas into the chamber of the steam distribution unit 300 through multiple carrier gas outlets 10 provided on the pipe wall of its carrier gas delivery pipe 12. At the same time, the source material vapor generated by the source material vaporization unit 200 is also directly delivered to the chamber of the steam distribution unit 300 through the steam outlet 20. The preheated carrier gas carries the source material vapor and flows in the chamber of the steam distribution unit 300. During the flow, the two are mixed evenly and finally ejected from the steam distribution outlet 30 and deposited on the substrate 40 of the deposition unit 400.
[0071] The advantage of implementation scheme (1) is that it can make the overall structure of the vapor transport deposition device more compact, reduce the number of connecting parts, simplify the structure of the vapor transport deposition device, and improve its operational reliability.
[0072] By arranging multiple carrier gas outlets 10 at intervals along the axial direction on the wall of the carrier gas conveying pipe 12, the carrier gas can be evenly distributed in the chamber of the vapor distribution unit 300 and fully and evenly mixed with the source material vapor conveyed from the vapor outlet 20. This is beneficial for forming a more stable and uniform atmosphere during the gas phase transport process, thereby improving the quality and uniformity of the deposited film and reducing the non-uniformity of film thickness and composition.
[0073] In some examples, for instance, the vaporization chamber 21 is a crucible with a slit at the top serving as a vapor outlet 20. Here, the slit refers to one whose length is greater than its width, for example, at least 5 times, or even greater than or equal to 10 times, the length.
[0074] By using the slit as a vapor outlet 20, the slit has a directional and uniform transport effect on the sublimation atmosphere, which is conducive to the uniform deposition of source material vapor on the substrate, forming a thin film with uniform thickness and composition, and improving the film quality.
[0075] Since both the carrier gas preheating unit 100 and the source material vaporization unit 200 are located inside the steam distribution unit 300, the distance between the carrier gas outlet 10 and the steam outlet 20 of the vaporization chamber 21 is relatively short. Without allowing the carrier gas to enter the source material vaporization unit 200, the position, shape, and angle of the carrier gas outlet 10 and the steam outlet 20 need to be rationally designed to ensure the carrier gas effectively carries the source material vapor and avoids uneven mixing or localized airflow turbulence. To address this technical problem, in some examples, the carrier gas delivery pipe 12 can be rotatably arranged within the chamber of the steam distribution unit 300. For example, when the carrier gas delivery pipe 12 rotates around its axis, its rotation angle can change. That is, the carrier gas delivery pipe 12 is rotatably arranged within the chamber of the steam distribution unit 300, allowing it to rotate to adjust the carrier gas purging angle and avoid uneven mixing or localized airflow turbulence.
[0076] Furthermore, as shown in the appendix Figure 4 As shown, the vapor distribution unit 300 has a first baffle 31 and a second baffle 32. At least one of the first baffle 31 and the second baffle 32 is arranged at an angle, and a transmission channel is formed between the first baffle 31 and the second baffle 32. The transmission channel is used for the transmission of carrier gas and source material vapor. The size of the second end of the transmission channel near the vapor distribution outlet 30 is smaller than the size of the first end of the transmission channel near the source material gasification unit 200.
[0077] In some examples, both the first baffle 31 and the second baffle 32 can be arranged at an angle, so that the longitudinal section of the transmission channel between them is trapezoidal, making the transmission channel wider at the top and narrower at the bottom. For example, the first baffle 31 is disposed in the chamber of the steam distribution unit 300, and the first end of the first baffle 31 overlaps with the vaporization chamber 21 (e.g., overlaps with the top of the vaporization chamber 21), and the second end of the first baffle 31 overlaps with the bottom wall of the steam distribution unit 300 where the steam distribution outlet 30 is provided.
[0078] The second baffle 32 can be provided by the cavity wall of the steam distribution unit 300 to simplify the structural layout (of course, it is not excluded that the second baffle 32 can be set separately inside the cavity of the steam distribution unit 300). The first end of the second baffle 32 is connected to the top wall of the cavity of the steam distribution unit 300, and the second end of the second baffle 32 is connected to the bottom wall of the cavity of the steam distribution unit 300. The steam distribution outlet 30 is located between the second end of the first baffle 31 and the second end of the second baffle 32.
[0079] The inclined baffles guide the carrier gas and source material vapor, ensuring they flow along the designated transmission channels. This prevents airflow turbulence and guarantees more orderly mixing and transmission of the two gases, improving the stability and controllability of the gas-phase transmission process. The inclined baffles and variable-sized transmission channels reduce dead zones and eddies during transmission, allowing for smoother and more uniform gas flow through the channels and reducing residence time within the chamber, thus improving transmission efficiency. Furthermore, according to fluid mechanics principles, when gas moves from a larger space to a smaller space, both flow velocity and pressure increase. This not only enhances the mixing of the carrier gas and source material vapor but also facilitates the smooth discharge of the mixed gas from the vapor distribution unit 300.
[0080] In some examples of the above-mentioned implementation scheme (1), a mixing structure can also be provided in the chamber of the vapor distribution unit 300. The mixing structure is located downstream of the vapor outlet 20 and upstream of the vapor distribution outlet 30 to promote the mixing of carrier gas and source material vapor, thereby improving the uniformity and consistency of the subsequent deposition reaction.
[0081] For example, the mixing structure can be located in the area where the vapor distribution outlet 30 is located. The mixing structure can be a compensating plate, a twisted blade static mixer, a perforated plate, a spiral flow channel plate, etc., arranged along the gas flow direction.
[0082] In conjunction with any of the above-mentioned implementation schemes (1), the vaporization chamber 21 and the carrier gas delivery pipeline 12 can be arranged as follows: While ensuring that the carrier gas delivery pipeline 12 is located upstream of the vaporization chamber 21, it can be positioned above the vaporization chamber 21 to facilitate the preheating carrier gas's full carrying capacity of the source material vapor. Furthermore, the length direction of the vaporization chamber 21 can be arranged parallel to the axial direction of the carrier gas delivery pipeline 12, and the axial direction of the carrier gas outlet 10 and the axial direction of the vapor outlet 20 have an angle (i.e., they are not parallel). This angle can be, for example, 90° or adjusted according to actual needs.
[0083] In some implementation schemes (2), see Figure 5 and Figure 6The carrier gas preheating unit 100 and the source material vaporization unit 200 are both located outside the vapor distribution unit 300. The source material vaporization unit 200 includes a vaporization chamber 21 with a vapor outlet 20. A source material vaporizer 23 is installed inside the vaporization chamber 21 to sublimate the solid source material into source material vapor. The vapor transport deposition apparatus also includes a distributor 33, which is at least partially located inside the chamber of the vapor distribution unit 300 and has an outlet 331 located above the vapor distribution outlet 30. The distributor 33 is connected to both the carrier gas outlet 10 of the carrier gas preheating unit 100 and the vapor outlet 20 of the source material vaporization unit 200. Figure 5 This is an exemplary cross-sectional view of the vapor transport deposition apparatus. Figure 6 for Figure 5 An exemplary structure of the vapor phase transport deposition apparatus shown.
[0084] For implementation scheme (2), the distributor 33 may also include a portion located outside the chamber of the steam distribution unit 300, which may be, for example, a pipe joint (e.g., a two-way pipe joint) to facilitate fixed connection with different pipes.
[0085] The carrier gas preheating unit 100 can be as shown above, including a carrier gas chamber 11, a carrier gas delivery pipe 12 communicating with the carrier gas chamber 11, and a first heating element 13 assembled to the carrier gas delivery pipe 12. The carrier gas delivery pipe 12 is located outside the chamber of the steam distribution unit 300, and the end of the carrier gas delivery pipe 12 can be used as a carrier gas outlet 10 to connect to one of the pipe joints of the distributor 33.
[0086] The vaporization chamber 21 can be any chamber structure capable of housing the source material vaporizer 23, and it can be equipped with an insulation structure to maintain the temperature of the source material vapor. The vapor outlet 20 can be located on the wall of the vaporization chamber 21, for example, at the top of the wall, and it can be connected to another interface of the distributor 33 via a connecting pipe. In this example, the source material vaporizer 23 can be a crucible (e.g., an open-top crucible), an evaporation boat, etc.
[0087] The working principle of the above implementation scheme (2) is as follows: The carrier gas preheating unit 100 delivers preheated carrier gas into the distributor 33 through its carrier gas outlet 10. At the same time, the source material vapor generated by the source material vaporization unit 200 is delivered to the distributor 33 through its vapor outlet 20. The preheated carrier gas and the source material vapor are fully mixed in the distributor 33, and under the carrying action of the carrier gas, they are delivered from the outlet 331 of the distributor 33 to the chamber of the vapor distribution unit 300, and finally ejected from the vapor distribution outlet 30 and deposited on the substrate 40 of the deposition unit 400.
[0088] The advantages of implementation scheme (2) are: the carrier gas preheating unit 100 and the source material gasification unit 200 are located outside the chamber of the vapor distribution unit 300. On the one hand, it is convenient to maintain and replace the two. On the other hand, it is more advantageous for the flexible layout and expansion of the gas phase transport deposition device, so as to flexibly arrange the position and number of the carrier gas preheating unit 100 and the material gasification unit according to different process requirements and site conditions. Furthermore, it is convenient to monitor and control the operation process of the carrier gas preheating unit 100 and the source material gasification unit 200.
[0089] The distributor 33 is provided with a first inlet and a second inlet, and both the first inlet and the second inlet are located outside the chamber of the steam distribution unit 300. The distributor 33 is connected to the carrier gas outlet 10 of the carrier gas preheating unit 100 through the first inlet and to the steam outlet 20 of the source material gasification unit 200 through the second inlet. The first inlet is located upstream of the second inlet.
[0090] The distributor 33 can be adapted to the chamber structure of the steam distribution unit 300. For example, the distributor 33 can be tubular, hollow plate-shaped, or have a chamber structure with a specific geometry.
[0091] For example, Figure 1 The example shows that the distributor 33 is tubular, with its end closed and multiple outlets 331 spaced apart along the axial direction on the tube wall of the tubular distributor 33. This scheme has the advantages of simple structure, good mixing effect, and high gas distribution uniformity, so as to ensure that the carrier gas carrying the source material vapor is uniformly delivered to the chamber of the vapor distribution unit 300.
[0092] Furthermore, the discharge port 331 can be configured as at least one set along the circumferential direction of the distributor 33, and each set of discharge ports 331 includes multiple discharge ports 331 spaced apart along the axial direction of the distributor 33, so as to improve the discharge effect.
[0093] In some examples, the distributor 33 can be positioned adjustablely within the chamber of the steam distribution unit 300, thereby allowing for adjustment of the discharge angle and preventing uneven distribution or localized airflow turbulence. Taking a tubular distributor 33 as an example, when the tubular distributor 33 rotates around its axis, its rotation angle can change. That is, the tubular distributor 33 is rotatably disposed within the chamber of the steam distribution unit 300, thus allowing the tubular distributor 33 to rotate to adjust the gas purging angle.
[0094] Furthermore, as shown in the appendix Figure 7As shown, the vapor transport deposition apparatus involved in this embodiment (2) further includes: a carrier gas redistributor 34, which is located inside the chamber of the vapor distribution unit 300 and above the distributor 33; the carrier gas redistributor 34 has a carrier gas inlet 341 and a carrier gas distribution port 342, the carrier gas inlet 341 is connected to the carrier gas outlet 10 of the carrier gas preheating unit 100, and the carrier gas distribution port 342 is used to provide carrier gas to the chamber of the vapor distribution unit 300.
[0095] For this implementation plan, see attached Figure 7 As shown, the carrier gas preheating unit 100 can be configured as two parallel lines, one of which is connected to the distributor 33 and the other is connected to the carrier gas redistributor 34.
[0096] By further configuring the carrier gas redistributor 34, on the one hand, the carrier gas can be redistributed and regulated, which helps to stabilize the entire vapor-phase transport deposition process. When the carrier gas flow rate or pressure of the carrier gas preheating unit 100 fluctuates or the pressure of the mixed gas output from the vapor distribution outlet 30 fluctuates, the carrier gas redistributor 34 can buffer and regulate these fluctuations to a certain extent, keeping the carrier gas entering the distributor 33 and the vapor distribution unit 300 relatively stable, thereby improving the stability and repeatability of the process. On the other hand, a portion of the carrier gas from the carrier gas preheating unit 100 can be evenly distributed into the chamber of the vapor distribution unit 300 through its carrier gas distribution port 342, so that the carrier gas forms a more uniform flow field in the chamber, fully contacting and mixing with the source material vapor, improving mixing uniformity and efficiency. On the other hand, the carrier gas redistributor 34 provides additional carrier gas flow rate adjustment points. By adjusting parameters such as the size, number, or angle of the carrier gas distribution port 342 of the carrier gas redistributor 34, the flow rate and direction of the carrier gas entering the vapor distribution unit 300 chamber can be flexibly controlled to adapt to the requirements of different source materials, deposition processes, and deposition rates.
[0097] The carrier gas redistributor 34 can be adapted to the chamber structure of the vapor distribution unit 300. For example, the carrier gas redistributor 34 can be tubular, hollow plate-shaped, or have a chamber structure with a specific geometry.
[0098] For example, Figure 7 An example of a tubular carrier gas redistributor 34 is provided. The end of the tubular carrier gas redistributor 34 is closed, and multiple carrier gas distribution ports 342 are spaced apart along the axial direction on the tube wall of the tubular carrier gas redistributor 34 to achieve a more uniform redistribution of the carrier gas. When the carrier gas redistributor 34 is tubular, it can share a pipeline with the corresponding carrier gas delivery pipeline 12.
[0099] Furthermore, a gas flow regulator is provided for the carrier gas redistributor 34. The gas flow regulator is used to adjust the delivery flow rate of the carrier gas in the carrier gas redistributor 34 to enhance its adaptability to different usage scenarios.
[0100] In some implementation schemes (3), see Figure 8 The carrier gas preheating unit 100 and the source material vaporization unit 200 are both located outside the vapor distribution unit 300. The source material vaporization unit 200 includes a vaporization chamber 21 with a vapor outlet 20. A source material vaporizer 23 is installed inside the vaporization chamber 21 to sublimate the solid source material to form source material vapor. The vapor transport deposition apparatus also includes a carrier gas distributor 35 and a gaseous source distributor 36. The carrier gas distributor 35 is located upstream of the gaseous source distributor 36. The inlet of the carrier gas distributor 35 is connected to the carrier gas outlet 10 of the carrier gas preheating unit 100, and the carrier gas distributor 35 also has a carrier gas distribution outlet 351. The inlet of the gaseous source distributor 36 is connected to the vapor outlet 20 of the source material vaporization unit 200, and the gaseous source distributor 36 also has a gaseous source distribution outlet 361.
[0101] For implementation scheme (3), both the carrier gas distributor 35 and the gas source distributor 36 may further include a portion located outside the chamber of the vapor distribution unit 300, which may be, for example, a pipe joint.
[0102] The carrier gas preheating unit 100 can be as shown above, including a carrier gas chamber 11, a carrier gas delivery pipe 12 communicating with the carrier gas chamber 11, and a first heating element 13 assembled to the carrier gas delivery pipe 12. The carrier gas delivery pipe 12 is located outside the chamber of the steam distribution unit 300, and the end of the carrier gas delivery pipe 12 can be used as a carrier gas outlet 10 to communicate with the carrier gas distributor 35.
[0103] The vaporization chamber 21 can be any chamber structure capable of housing the source material vaporizer 23, and it can be equipped with an insulation structure to maintain the temperature of the source material vapor. The vapor outlet 20 can be located on the wall of the vaporization chamber 21, for example, at the top of the wall, and it can be connected to the gas source distributor 36 via a connecting pipe. In this example, the source material vaporizer 23 can be a crucible (e.g., an open-top crucible), an evaporation boat, etc.
[0104] The working principle of the above implementation scheme (3) is as follows: The carrier gas preheating unit 100 delivers preheated carrier gas into the carrier gas distributor 35 through its carrier gas outlet 10. The carrier gas is distributed to the chamber of the vapor distribution unit 300 by the carrier gas distribution outlet 351 of the carrier gas distributor 35. At the same time, the source material vapor generated by the source material vaporization unit 200 is delivered to the gaseous source distributor 36 through its vapor outlet 20. The source material vapor is distributed to the chamber of the vapor distribution unit 300 by the gaseous source distribution outlet 361 of the gaseous source distributor 36. The preheated carrier gas and the source material vapor are fully mixed in the chamber of the vapor distribution unit 300. Under the carrying action of the carrier gas, the vapor is finally ejected from the vapor distribution outlet 30 and deposited on the substrate 40 of the deposition unit 400.
[0105] The advantages of the above implementation scheme (3) are as follows: the carrier gas distributor 35 can evenly and accurately distribute the carrier gas to each area according to the set parameters such as flow rate and pressure, and the gas source distributor 36 can also play the same role for the gas source material. Furthermore, the carrier gas distributor 35 and the gas source distributor 36 can be controlled independently. Thus, precise gas distribution and thorough mixing are achieved through the carrier gas distributor 35 and the gas source distributor 36, making the deposition process more uniform, stable and controllable, and improving the compositional uniformity and consistency of the deposited film.
[0106] The carrier gas distributor 35 can be adapted to the chamber structure of the vapor distribution unit 300. For example, the carrier gas distributor 35 can be tubular, hollow plate-shaped, or have a chamber structure with a specific geometry.
[0107] For example, Figure 8 The example shows that the carrier gas distributor 35 is tubular, with its end closed and multiple carrier gas distribution outlets 351 spaced apart along the axial direction on the tube wall of the tubular carrier gas distributor 35. This scheme has the advantages of simple structure, good mixing effect, and high gas distribution uniformity, so as to ensure that the carrier gas carrying the source material vapor is uniformly delivered to the chamber of the vapor distribution unit 300.
[0108] Furthermore, the carrier gas distribution outlet 351 can be configured as at least one set along the circumferential direction of the tubular carrier gas distributor 35, and each set of carrier gas distribution outlets 351 includes multiple carrier gas distribution outlets 351 spaced apart along the axial direction of the tubular carrier gas distributor 35, so as to improve the discharge effect.
[0109] The gas source distributor 36 is located below the carrier gas distributor 35, and the gas source distributor 36 can be adapted to the chamber structure of the vapor distribution unit 300. For example, the gas source distributor 36 can be tubular, hollow plate-shaped, or a chamber structure with a specific geometry.
[0110] For example, Figure 8 The example illustrates a tubular gas source distributor 36 with a closed end. Multiple gas source distribution outlets 361 are spaced apart along the axial direction on the tube wall of this tubular gas source distributor 36. This design offers advantages such as simple structure, good mixing effect, and high gas distribution uniformity, ensuring that the source material vapor is uniformly delivered to the chamber of the vapor distribution unit 300.
[0111] Furthermore, the gas source distribution outlet 361 can be configured as at least one set along the circumferential direction of the tubular gas source distributor 36, and each set of gas source distribution outlets 361 includes multiple gas source distribution outlets 361 spaced apart along the axial direction of the tubular gas source distributor 36, so as to improve the discharge effect.
[0112] As mentioned above, the carrier gas distributor 35 is located upstream of the gaseous source distributor 36, that is, the carrier gas distribution outlet 351 is located upstream of the gaseous source distribution outlet 361, ensuring that the source material vapor can be carried sufficiently and effectively by the carrier gas. For the absolute positions of the carrier gas distributor 35 and the gaseous source distributor 36, one embodiment can be found... Figure 8 The example shows that the carrier gas distributor 35 is located above the gas source distributor 36. Of course, it is not excluded that the carrier gas distributor 35 may also be located at the same horizontal position as the gas source distributor 36, or the carrier gas distributor 35 may also be located below the gas source distributor 36.
[0113] In some examples, at least one of the carrier gas distributor 35 and the gas source distributor 36 can be positionably arranged inside the chamber of the steam distribution unit 300. For example, both the carrier gas distributor 35 and the gas source distributor 36 can be positionably arranged inside the chamber of the steam distribution unit 300. The adjustable position of the carrier gas distributor 35 and / or the gas source distributor 36 facilitates the adjustment of the discharge angle, avoiding uneven distribution or local airflow turbulence.
[0114] Taking the tubular carrier gas distributor 35 and / or the tubular gas source distributor 36 as examples, when the distributor rotates with its axis as the pivot, its rotation angle can be changed. That is, the tubular distributor is rotatably disposed in the chamber of the steam distribution unit 300, so that the tubular distributor can rotate to adjust the conveying angle of the discharge.
[0115] It should be noted that the end of the pipeline mentioned above in the embodiments of this disclosure refers to the downstream port of the pipeline. By closing the downstream port of the pipeline (i.e., closing the end), the gas is ensured to be evenly distributed from the multiple outlets provided on the pipe wall.
[0116] For any of the aforementioned vapor phase transport deposition apparatuses, the chamber of its vapor distribution unit 300 can be selected according to actual needs. For example, the chamber of the vapor distribution unit 300 can be a hollow cylinder, a hollow elliptical cylinder, a hollow prism, or other shaped chamber structure. The vapor distribution outlet 30 can be disposed on the bottom wall of the chamber of the vapor distribution unit 300, and multiple vapor distribution outlets 30 can be provided to improve uniformity. The vapor distribution outlet 30 can be designed as a nozzle (e.g., a slit, a circular hole, an elliptical hole, a fan-shaped hole, or other irregularly shaped holes), thereby ensuring that the mixed gas of carrier gas and source material vapor is rapidly sprayed onto the surface of the substrate 40 in the desired direction. Furthermore, during the process of the mixed gas being ejected from the vapor distribution outlet 30, uniform dispersion can be further achieved, promoting the uniformity of vapor phase deposition. The deposition unit 400 is used to receive the carrier gas and source material vapor and perform deposition.
[0117] In some examples, such as the attached Figure 5 , 7 Alternatively, as shown in Figure 8, the deposition unit 400 includes a deposition chamber 41 and a stage 42. The vapor distribution unit 300 is located inside the deposition chamber 41. Alternatively, the vapor distribution unit 300 is fixedly connected to the deposition chamber 41 so that the vapor distribution outlet 30 is accommodated inside the deposition chamber 41. The stage 42 is movably located inside the deposition chamber 41 and is arranged facing the vapor distribution outlet 30. The stage 42 is used to support the substrate 40.
[0118] The stage 42 is movable to facilitate its entry into or exit from the deposition chamber 41, thereby allowing convenient manipulation of the substrate 40 thereon. In application, a carrier gas carrying source material vapor is delivered from the vapor distribution outlet 30 to the substrate 40 within the deposition chamber 41 for vapor deposition. The arrangement of the deposition chamber 41 is designed according to the actual type of vapor deposition. For example, for vapor deposition requiring vacuum conditions, the deposition chamber 41 can be configured as a vacuum chamber. This embodiment does not specifically limit the arrangement of the deposition chamber 41.
[0119] In some examples, the vapor distribution unit 300 can be located within the deposition chamber 41, which helps reduce the footprint of the vapor transport deposition apparatus, saves space, and improves integration. Moreover, since the vapor distribution unit 300 is located directly within the chamber of the deposition unit 400, this helps shorten the gas transport path and reduce gas loss and diffusion during transport.
[0120] In other examples, the vapor distribution unit 300 is fixedly connected to the deposition chamber 41 so that the vapor distribution outlet 30 is housed within the deposition chamber 41. That is, the vapor distribution unit 300 and the deposition unit 400 are relatively independent of each other. This not only facilitates separate maintenance and adjustment of both, but also enables effective thermal and physical isolation, such as effectively reducing the risk of cross-contamination between the two units.
[0121] Depending on the actual application scenario and actual needs, it is possible to choose whether to arrange the vapor distribution unit 300 independently or integrated into the deposition unit 400.
[0122] The number of each of the carrier gas preheating unit 100, source material gasification unit 200, steam distribution unit 300 and deposition unit 400 in any of the above-mentioned gas phase transport deposition devices can be designed according to actual production needs. The following are exemplary descriptions with reference to the accompanying drawings.
[0123] See Figure 3 The example shows that the carrier gas preheating unit 100, the source material gasification unit 200, the steam distribution unit 300 and the deposition unit 400 are arranged in a one-to-one correspondence. The carrier gas preheating unit 100 and the source material gasification unit 200 are connected to the steam distribution unit 300, and the steam distribution unit 300 is connected to the deposition unit 400.
[0124] See Figure 9 The example illustrates that a carrier gas preheating unit 100 and a source material gasification unit 200 constitute a first combined unit, and multiple first combined units are arranged in parallel, and all of the multiple first combined units arranged in parallel are connected to the same steam distribution unit 300, which in turn is connected to a deposition unit 400.
[0125] See Figure 10 The example shows that a carrier gas preheating unit 100, a source material gasification unit 200 and a steam distribution unit 300 constitute a second combined unit, and multiple second combined units are arranged in parallel, and all multiple second combined units arranged in parallel are connected to the same deposition unit 400.
[0126] The vapor transport deposition apparatus described above in this disclosure can be used to prepare various types of semiconductor thin films, such as perovskite thin films. This vapor transport deposition apparatus solves the problems of low deposition rate and low degree of freedom in thin film deposition control in current dry deposition processes. While improving thin film deposition efficiency, it also allows for more precise control of thin film morphology, which is beneficial for obtaining high-quality thin films. This is advantageous for achieving thin film morphology control based on dry processes in the large-scale mass production of semiconductor thin films, improving the quality of semiconductor thin films, such as perovskite thin films, increasing production efficiency, and reducing costs.
[0127] On the other hand, embodiments of this disclosure also provide a vapor deposition method applicable to any of the vapor transport deposition apparatuses mentioned above.
[0128] The vapor deposition method provided in this disclosure has all the advantages of the vapor transport deposition apparatus mentioned above, and will not be repeated here.
[0129] The above description is only for the purpose of enabling those skilled in the art to understand the technical solutions disclosed herein, and is not intended to limit the scope of this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.
Claims
1. A vapor phase transport deposition apparatus, characterized in that, The vapor transport deposition apparatus includes: a carrier gas preheating unit (100), a source material vaporization unit (200), a vapor distribution unit (300), and a deposition unit (400); The carrier gas preheating unit (100) has a carrier gas outlet (10), which is connected to the chamber of the steam distribution unit (300). The carrier gas preheating unit (100) is used to deliver preheated carrier gas to the chamber of the steam distribution unit (300) through the carrier gas outlet (10). The source material vaporization unit (200) has a steam outlet (20) which is connected to the chamber of the steam distribution unit (300). The source material vaporization unit (200) is used to deliver source material vapor to the chamber of the steam distribution unit (300) through the steam outlet (20). The steam distribution unit (300) has a steam distribution outlet (30) which is arranged facing the deposition unit (400); Wherein, the steam outlet (20) is located downstream of the carrier gas outlet (10), and the steam distribution outlet (30) is located downstream of the steam outlet (20), so that the carrier gas carries the source material steam to the steam distribution outlet (30); The carrier gas preheating unit (100) includes a carrier gas chamber (11), a carrier gas conveying pipe (12) communicating with the carrier gas chamber (11), and a first heating element (13) assembled to the carrier gas conveying pipe (12); The carrier gas chamber (11) is used to store the carrier gas, the carrier gas delivery pipe (12) is used to deliver the carrier gas, the first heating element (13) is used to heat the carrier gas delivered in the carrier gas delivery pipe (12), and the first heating element (13) is also electrically connected to the control system of the vapor phase transport deposition apparatus, the control system is used to control the operation of the first heating element (13); The source material vaporization unit (200) includes: a vaporization chamber (21) and a second heating element (22) assembled to the vaporization chamber (21). The vaporization chamber (21) is used to generate the source material vapor and is provided with the vapor outlet (20). The second heating element (22) is also electrically connected to the control system of the vapor transport deposition apparatus. The control system is used to control the operation of the second heating element (22).
2. The vapor transport deposition apparatus according to claim 1, characterized in that, The carrier gas preheating unit (100) also includes a carrier gas flow rate regulator disposed on the carrier gas delivery pipeline (12), and the carrier gas flow rate regulator is also electrically connected to the control system of the gas phase transport deposition device.
3. The vapor transport deposition apparatus according to claim 1, characterized in that, The carrier gas delivery pipe (12) is partially located in the chamber of the steam distribution unit (300). The end of the pipe section of the carrier gas delivery pipe (12) located in the chamber of the steam distribution unit (300) is closed and a plurality of carrier gas outlets (10) are spaced apart along the axial direction on the pipe wall. The vaporization chamber (21) is located within the cavity of the steam distribution unit (300), and the steam outlet (20) is located in the vaporization chamber (21).
4. The vapor transport deposition apparatus according to claim 3, characterized in that, The carrier gas delivery pipe (12) is arbitrarily positioned within the chamber of the steam distribution unit (300).
5. The vapor transport deposition apparatus according to claim 3, characterized in that, The vapor distribution unit (300) has a first baffle (31) and a second baffle (32), at least one of the first baffle (31) and the second baffle (32) is arranged at an angle, and a transmission channel is formed between the first baffle (31) and the second baffle (32), the transmission channel being used for the transmission of carrier gas and source material vapor; The size of the second end of the transmission channel near the steam distribution outlet (30) is smaller than the size of the first end of the transmission channel near the source material gasification unit (200).
6. The vapor transport deposition apparatus according to claim 3, characterized in that, The vaporization chamber (21) is a crucible, and the top of the crucible has a slit as the vapor outlet (20).
7. The vapor transport deposition apparatus according to any one of claims 3-6, characterized in that, The vapor distribution unit (300) is provided with a mixing structure in its chamber. The mixing structure is located downstream of the vapor outlet (20) and upstream of the vapor distribution outlet (30) to promote the mixing of carrier gas and source material vapor.
8. The vapor transport deposition apparatus according to claim 1, characterized in that, The carrier gas preheating unit (100) and the source material gasification unit (200) are both located outside the steam distribution unit (300); The vaporization chamber (21) is equipped with a source material vaporizer (23), which is used to sublimate solid source materials. The vapor transport deposition apparatus further includes a distributor (33) located at least partially inside the chamber of the vapor distribution unit (300), the distributor (33) having an outlet (331) located above the vapor distribution outlet (30), the distributor (33) being connected to the carrier gas outlet (10) of the carrier gas preheating unit (100) and the vapor outlet (20) of the source material vaporization unit (200).
9. The vapor transport deposition apparatus according to claim 8, characterized in that, The distributor (33) is tubular, and multiple discharge ports (331) are closed at the end of the distributor (33) and are spaced apart along the axial direction on the tube wall of the distributor (33).
10. The vapor transport deposition apparatus according to any one of claims 8-9, characterized in that, The vapor transport deposition apparatus further includes a carrier gas redistributor (34), which is located inside the chamber of the vapor distribution unit (300) and above the distributor (33); The carrier gas redistributor (34) has a carrier gas inlet (341) and a carrier gas distribution port (342). The carrier gas inlet (341) is connected to the carrier gas outlet (10) of the carrier gas preheating unit (100), and the carrier gas distribution port (342) is used to supply carrier gas to the chamber of the steam distribution unit (300).
11. The vapor transport deposition apparatus according to claim 1, characterized in that, The carrier gas preheating unit (100) and the source material gasification unit (200) are both located outside the steam distribution unit (300); The vaporization chamber (21) is located outside the vapor distribution unit (300) and has a vapor outlet (20). A source material vaporizer (23) is provided inside the vaporization chamber (21) for sublimating solid source materials. The vapor transport deposition apparatus further includes a carrier gas distributor (35) and a gas source distributor (36). The carrier gas distributor (35) is located upstream of the gas source distributor (36). The inlet of the carrier gas distributor (35) is connected to the carrier gas outlet (10) of the carrier gas preheating unit (100). The carrier gas distributor (35) also has a carrier gas distribution outlet (351). The inlet of the gas source distributor (36) is connected to the vapor outlet (20) of the source material vaporization unit (200). The gas source distributor (36) also has a gas source distribution outlet (361).
12. The vapor transport deposition apparatus according to claim 11, characterized in that, The carrier gas distributor (35) is tubular, and the end of the carrier gas distributor (35) is closed. A plurality of carrier gas distribution outlets (351) are spaced apart along the axial direction on the tube wall of the carrier gas distributor (35). The gas source distributor (36) is tubular, and the end of the gas source distributor (36) is closed. A plurality of gas source distribution outlets (361) are spaced apart along the axial direction on the tube wall of the gas source distributor (36).
13. The vapor transport deposition apparatus according to claim 1, characterized in that, The deposition unit (400) includes a deposition chamber (41) and a stage (42). The vapor distribution unit (300) is located inside the deposition chamber (41), or the vapor distribution unit (300) is fixedly connected to the deposition chamber (41) so that the vapor distribution outlet (30) is accommodated inside the deposition chamber (41). The stage (42) is located inside the deposition chamber (41) and is arranged facing the vapor distribution outlet (30). The stage (42) is used to support the substrate (40).
14. A vapor deposition method, characterized in that, The vapor deposition method is applied to the vapor transport deposition apparatus according to any one of claims 1-13.