Semiconductor processing equipment and aging treatment method for parts of semiconductor processing equipment

Abstract

The invention discloses an aging treatment method for parts of semiconductor treatment equipment and the semiconductor treatment equipment. The aging treatment method comprises the following steps: providing semiconductor treatment equipment, wherein the semiconductor treatment equipment comprises a chamber and a to-be-treated part mounted in the chamber; an aging treatment step: introducing a first process gas into the chamber so as to deposit a C-F aging layer on the surface of the to-be-treated part; and a cleaning step: introducing a second process gas into the chamber, removing the loose layer on the surface of the C-F aging layer, and retaining the compact and smooth C-F aging layer. The part exposed in the chamber is subjected to in-situ aging treatment, a compact and smooth C-F aging layer can be formed on the surface of the part through multiple times of aging treatment and wafer-free cleaning alternate circulation, the bonding force is high, the aging requirements of customers are met, and the stability of the etching process can be effectively maintained when the wafer etching process is used.

Description

Technical Field

[0001] The present invention relates to semiconductor device equipment, and in particular to an aging treatment method for parts of semiconductor processing equipment and semiconductor processing equipment. Background Art

[0002] During the etching process, byproducts mainly composed of CF are continuously deposited on the surface of components, which may cause aging of the components. This aging will affect the etching rate and etching morphology by changing the state of plasma during the etching process. Therefore, after producing large quantities of wafers, regular maintenance, care, and replacement of components are required to prevent aging components from affecting the yield rate of wafers.

[0003] However, after replacing new parts, etching equipment may still encounter the problem of etching process effect shift, which is manifested as a shift in etching rate and etching morphology. Through the surface composition analysis of the old and new parts of the etching equipment, it was found that some CF byproducts have been deposited on the surface of the old parts, showing a certain degree of aging; while the surface of the new parts has not aged, that is, the aging degree of the new and old parts is different. When replacing some new parts, the aging degree of the new and old parts in the same etching equipment is different, resulting in the shift of the etching effect during the wafer etching process. Therefore, it is particularly important to quickly age the new parts to the working conditions corresponding to the etching process without changing the etching process.

[0004] In order to meet the requirements of process stability and improve production efficiency, it is urgent to quickly age new parts in a short period of time to achieve the production effect required by customers. However, the current methods for rapid aging of parts have problems such as over-aging and unsatisfactory aging effects. Summary of the invention

[0005] The purpose of the present invention is to solve the problem of excessive aging or unsatisfactory aging effect in the rapid aging process, and to provide an aging treatment method that can quickly age the replaced new parts to a process stable state, which is used for the maintenance, care and replacement of parts of etching equipment.

[0006] In order to achieve the above object, the present invention provides an aging treatment method for semiconductor processing equipment parts, comprising:

[0007] A semiconductor processing device is provided, comprising: a chamber and a component to be processed installed in the chamber;

[0008] Aging treatment step: introducing a first process gas into the chamber to deposit and form a CF aging layer on the surface of the component to be treated;

[0009] Cleaning step: introducing a second process gas into the chamber to remove the loose layer on the surface of the CF aged layer and retain the dense and smooth CF aged layer.

[0010] Optionally, the first process gas comprises C x H y F z Gas, where x>0, y≥0, z>0.

[0011] Optionally, the C-containing x H y F z The gas is CH 3 F.C 4 F 8 , CHF 3 , CH 2 F 2 and CF 4 At least one of .

[0012] Optionally, the first process gas further comprises O 2 .

[0013] Optionally, the first process gas further comprises HBr and NF 3 At least one of .

[0014] Optionally, the first process gas further includes a carrier gas, and the carrier gas is at least one of Ar or He.

[0015] Optionally, the second process gas comprises: an oxygen-containing gas.

[0016] Optionally, the oxygen-containing gas is O 2 or 3 .

[0017] Optionally, the second process gas includes: a fluorine-containing gas.

[0018] Optionally, the fluorine-containing gas is NF 3 .

[0019] Optionally, the second process gas includes a carrier gas, and the carrier gas is at least one of Ar or He.

[0020] Optionally, in the aging treatment step, the process pressure is 0 mT to 300 mT.

[0021] Optionally, during the cleaning step, a first bias RF power is applied.

[0022] Optionally, the first bias RF power is 50W to 300W.

[0023] Optionally, the process interval stage between the aging step and the cleaning step includes a first transition step, wherein the first transition step applies a second bias RF power.

[0024] Optionally, the aging treatment step includes a first aging step and a second aging step, and there is a second transition step between the first aging step and the second aging step. The second transition step applies a third bias RF power, and the third bias RF power is less than the second bias RF power.

[0025] Optionally, the gas introduced into the first aging step includes CH 3 F.C 4 F 8 NF 3 、He.

[0026] Optionally, the gas introduced into the second aging step includes CHF3 and Ar.

[0027] Optionally, the process duration of the first aging step is shorter than the process duration of the second aging step.

[0028] Optionally, the second transition step introduces gas comprising HBr and NF 3 .

[0029] Optionally, the gas introduced into the first transition step includes CH3F, O2 and He.

[0030] Optionally, the process duration of the second transition step is shorter than the process duration of the first aging step.

[0031] Optionally, the process duration of the first transition step is greater than the process duration of the second aging step.

[0032] Optionally, Ar and He are introduced alternately into the carrier gas.

[0033] Optionally, the first bias RF power is greater than the second bias RF power.

[0034] Optionally, the time period ratio of the aging step to the cleaning step is 60-70:1.

[0035] Optionally, the semiconductor processing equipment further comprises an electrostatic chuck; before the aging treatment step begins, a protective substrate is covered on the electrostatic chuck; before the cleaning step begins, the protective substrate is removed.

[0036] Optionally, the initial temperature of the component to be processed is lower than the average initial temperature of the chamber.

[0037] Optionally, the aging treatment step and the cleaning step are repeated multiple times to form a dense and smooth CF aging layer with a target thickness on the surface of the component to be treated.

[0038] Optionally, an aging layer thickness parameter of the target chamber is obtained, and the target thickness is determined based on the thickness parameter.

[0039] Optionally, the thickness parameter is determined based on the thickness of an existing aged layer on a component of the target chamber. The present invention also provides a semiconductor processing device, comprising at least one component, on which a dense and smooth CF aged layer is formed.

[0040] Optionally, the CF aging layer is formed by the above-mentioned aging treatment method.

[0041] Compared with the prior art, the technical solution of the present invention has at least the following beneficial effects:

[0042] The first process gas is introduced to form an aging layer on the surface of the component, and then the second process gas is introduced to remove the loose layer on the surface of the aging layer, retaining a dense and smooth CF aging layer that is tightly combined with the component. The aging effect is ideal and is beneficial to the stability of the etching process.

[0043] Compared with the single-step rapid aging process, a dense and compact aged CF layer effect that meets the process requirements can be obtained through multiple cycles of aging treatment steps and cleaning steps.

[0044] By adjusting the time ratio of the aging step and the cleaning step, the density and aging efficiency of the aging layer are improved.

[0045] In the cleaning step, applying the first bias radio frequency power can bombard and remove the loose aged layer, thereby improving the cleaning efficiency.

[0046] Furthermore, a second biased RF power is applied in the process interval between the aging treatment step and the cleaning step to activate or knock out the loose layer that is not dense enough, while enhancing the bonding force between the dense layer and the surface of the component, thereby improving the aging effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 Schematic diagram of ideal aging effect.

[0048] Figure 2 Schematic diagram of the effect of rapid aging treatment.

[0049] Figure 3 The present invention is a schematic flow chart of an aging treatment method for semiconductor processing equipment parts.

[0050] Figure 4It is a schematic diagram of the effect of an aging treatment method for parts of semiconductor processing equipment according to the present invention.

[0051] Figure 5 It is a schematic structural diagram of a semiconductor processing device of the present invention.

[0052] Figure ID:

[0053] Surface of the component 1

[0054] Aging layer 10

[0055] Dense layer 11

[0056] Loose layer 12

[0057] Reaction Chamber 500

[0058] Gas sprinkler head 501

[0059] Base 502

[0060] Mounting substrate 503

[0061] Electrostatic chuck 504

[0062] Focus ring 505

[0063] Edge Ring 506

[0064] Plasma confinement ring 507

[0065] Substrate w. DETAILED DESCRIPTION

[0066] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0067] In the description of the present invention, it should be noted that the terms "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0068] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0069] As mentioned above, in order to avoid the deviation of etching rate or etching morphology caused by different aging degrees of components of semiconductor processing equipment during wafer processing, a CF aging layer needs to be formed on the surface of the components. The CF aging layer is required to be uniform and dense, such as Figure 1 As shown, the aging layer 10 is closely combined with the surface 1 of the component to maintain the stability of the etching process.

[0070] However, the rapid aging treatment method for semiconductor components in the prior art has an unsatisfactory aging effect. A CF aging layer 10 is formed by rapid deposition on the surface 1 of the semiconductor component. Figure 2 As shown, the aged layer 10 is relatively loose, and has a high surface roughness, a large interatomic distance and is in a loose state, which is not conducive to the etching process and will cause problems such as particle contamination, and does not meet the process requirements.

[0071] To this end, the present invention proposes an aging treatment method for semiconductor processing equipment parts, such as Figure 3 As shown, the aging treatment method comprises:

[0072] Step S1, providing a semiconductor processing device, comprising: a chamber and a component to be processed installed in the chamber.

[0073] The semiconductor processing equipment may be an etching equipment such as an inductively coupled plasma (ICP) reaction device, a capacitively coupled plasma (CCP) reaction device, etc. For semiconductor components constituting the semiconductor processing equipment, especially components that are exposed to the plasma environment during the etching process, such as the inner wall of the chamber, the liner, the gas shower head, the focusing ring, the plasma confinement ring, etc., during the etching process, the yield of the wafer product may be affected due to different degrees of aging. Therefore, the aging treatment of the present invention needs to be performed on the replaced or repaired components to obtain the required aging effect.

[0074] In some embodiments, the semiconductor processing equipment further comprises an electrostatic chuck. In the wafer etching process, the electrostatic chuck is less affected by aging because it is covered by the wafer. In order to reduce costs, it is not necessary to perform aging treatment on the electrostatic chuck. In the aging treatment step of the present invention, a protective substrate can be used for covering and protection. That is, before the aging treatment step begins, a protective substrate is covered on the electrostatic chuck; before the cleaning step begins, the protective substrate is removed.

[0075] Step S2, aging treatment step: introducing a first process gas into the chamber to deposit and form a CF aging layer on the surface of the component to be processed.

[0076] The function of the first process gas is to react under the excitation of the source RF power to generate CF polymer which is deposited on the surface of the component to form an aging layer. The first process gas may contain C x H y F z Gas, wherein x>0, y≥0, z>0. As an example, the C x H y F z The gas is CH 3 F.C 4 F 8 , CHF 3 , CH 2 F 2 and CF 4 At least one of .

[0077] In some embodiments, the first process gas further contains oxygen, which can help open the CF bonds in the process gas to promote the formation of CF polymers, thereby accelerating the deposition to form an aging layer. However, oxygen will also react with the loose CF polymers on the surface of the component and be discharged from the chamber in the form of gas. Therefore, the oxygen content in the first process gas is relatively low.

[0078] In some embodiments, the first process gas further comprises HBr and NF 3 Its function is to prevent the deposition from agglomerating too quickly, which may lead to uneven surface of parts, and to remove the loose layer on the surface of the CF aging layer.

[0079] In some embodiments, the first process gas further comprises a carrier gas, and the carrier gas is at least one of Ar or He. The carrier gas serves to disperse or dilute the reaction gas. At the same time, as a rare gas, the carrier gas can be used to stabilize the plasma. Preferably, Ar and He are alternately introduced to improve the uniformity and density of the aged layer based on the bombardment effect of alternating different atomic collision volumes.

[0080] In the aging treatment step, the process pressure is 0 mT to 300 mT. In some embodiments, the process pressure is 60 mT to 300 mT.

[0081] When the aging treatment step is carried out for a period of time, a thick aging layer is formed on the surface 1 of the component. The aging layer includes a dense layer 11 in contact with the surface of the component body, and an outermost loose layer 12. The loose layer 12 has a rough surface, a large atomic distance and is in a loose state. Figure 4 When the surface of the electrostatic chuck is covered with a protective substrate, an aging layer is also formed on the protective substrate. To avoid possible film rupture when the protective substrate is removed, the protective substrate needs to be removed after a period of aging treatment, and a wafer-free cleaning step is performed to remove the outermost loose layer in the aging layer.

[0082] Step S3, cleaning step: introducing a second process gas into the chamber to remove the loose layer on the surface of the CF aged layer and retain a dense and smooth CF aged layer, such as Figure 4 As shown in b.

[0083] The second process gas is used to react with the loose CF deposits on the surface of the aged layer to generate gaseous byproducts which are discharged from the chamber.

[0084] In some embodiments, the second process gas comprises: an oxygen-containing gas. The oxygen-containing gas is O 2 or 3 .

[0085] In some embodiments, the second process gas comprises: a fluorine-containing gas. As an example, the fluorine-containing gas is NF 3 .

[0086] The second process gas includes a carrier gas, which plays a role of dispersion or dilution, and the carrier gas is at least one of Ar and He. Preferably, Ar and He are introduced alternately to evenly blast open the loose surface aged layer based on the bombardment effect of alternating different atomic collision volumes, and play a squeezing effect on the aged layer retained at the bottom to make it denser, so as to improve the uniformity and density of the aged layer finally retained.

[0087] In the cleaning step, a first bias RF power is applied to bombard the surface of the component through bias-accelerated plasma, thereby promoting the shedding of the loose layer on the surface of the component and improving the cleaning efficiency. The first bias RF power is 50W to 300W.

[0088] In some embodiments, in order to increase the bonding force between the dense layer and the surface of the component, a first transition step is also performed in the process interval stage between the aging treatment step and the cleaning step, and the second bias RF power is applied in the first transition step. The second bias RF power causes the residual gas in the chamber to anisotropically bombard the generated aging layer, which can enhance the bonding force between the dense layer of the aging layer and the surface of the component, while also removing the loosest aging layer on the surface and knocking the relatively loosely bonded aging layer under the loose layer, which is equivalent to activating this part of the loosely bonded aging layer, facilitating the larger power bias bombardment cleaning and strengthening of the aging layer in the subsequent cleaning step. If a relatively large bias cleaning step is performed without applying a smaller second bias RF power after the aging treatment step, it will result in indiscriminate removal of the loose layer and attack on the dense layer below, destroying the integrity and uniformity of the overall morphology of the aging layer. Therefore, the first bias RF power is greater than the second bias RF power.

[0089] In one embodiment, the aging treatment step includes a first aging step and a second aging step, and a second transition step is provided between the first aging step and the second aging step, and the second transition step applies a third bias RF power, and the third bias RF power is less than the second bias RF power. By adding the second transition step, the third bias RF power is provided to intermittently remove the loose parts on the surface of the substrate aging layer during the aging deposition process, thereby avoiding the aging layer deposited in the single-step aging treatment step being too loose and difficult to completely remove the surface loose layer through the cleaning step, and improving the compactness of the aging layer formed in the first aging step by a smaller third bias RF power.

[0090] In one embodiment, the gas introduced into the first aging step includes CH 3 F.C 4 F 8 NF 3 , He. The gases introduced into the second aging step include CHF3 and Ar. By performing the aging treatment in steps in the aging treatment step and introducing different aging treatment gases, the layered deposition of the aging layer is achieved, and the bottom layer is more dense. The second aging step achieves a bombardment effect through the large molecular weight Ar, thereby improving the compactness of the aging layer and the bonding degree of the aging layer formed by the two aging steps.

[0091] In one embodiment, the process duration of the first aging step is less than the process duration of the second aging step. The first aging step is used as the deposition basis of the aging layer. Through a relatively short aging treatment, a relatively uniform and dense aging layer can be formed as the deposition base of the second aging step. On this basis, the second aging step can significantly increase the thickness of the aging layer by lengthening the process time, thereby improving the aging efficiency. Moreover, on the base of the first aging step, the uniformity of the aging layer of the second aging step is significantly improved.

[0092] In one embodiment, the second transition step introduces gas comprising HBr and NF 3 By partially continuing the process gas of the first aging step and removing the deposited components therein, the loose parts on the surface of the substrate aging layer are removed, the gas path changes are reduced and the process stability is improved.

[0093] In one embodiment, the gas introduced into the first transition step includes CH3F, O2 and He, so as to remove the loose layer on the surface of the aged layer and enhance the bonding force between the underlying dense layer and the surface of the component.

[0094] In one embodiment, the process duration of the second transition step is shorter than the process duration of the first aging step. Thus, the floating surface layer generated in the first aging step is removed by the short second transition step, thereby improving the density and consistency of the underlying aging layer without causing the newly deposited aging layer to be overetched and fall off.

[0095] In one embodiment, the process time of the first transition step is longer than the process time of the second aging step. Through the longer first transition step, the loose layer on the surface of the aging layer deposited in the second aging step is fully removed, and the bonding force between the dense layer and the surface of the component is enhanced. When the aging treatment time is too long, the loose layer in the formed aging layer is thicker and not easy to clean; when the aging treatment time is too short, the thickness of the dense layer in the formed aging layer is too small or the bonding force is insufficient, and it may be removed or loosened in the subsequent cleaning step, and the efficiency is reduced. The present invention also improves the density and aging efficiency of the aging layer by adjusting the time ratio of the aging treatment step and the cleaning step. In some embodiments, the time cycle ratio of the aging treatment step to the cleaning step is (60-70):1.

[0096] The present invention also found that low temperature is conducive to the deposition of CF aging layer. The average initial temperature of the chamber can refer to the temperature of the window at the top of the chamber, and the initial temperature is the preset temperature before the process starts. In order to promote the formation of the CF aging layer, the initial temperature of the parts to be processed can be made lower than the average initial temperature of the chamber. After the process starts, the temperature will rise. For example, the process temperature of the window at the top of the chamber is 60-90°C, and the initial temperature of the aging treatment can be set to 60-70°C.

[0097] In some embodiments, in order to obtain a dense CF aged layer with stronger bonding strength, the aging treatment step and the cleaning step are repeated for multiple cycles, that is, after cleaning and removing the loose layer 12 on the surface of the aged layer, the aging treatment step is continued to form an aged layer on the surface of the dense layer 11, which includes the dense layer 11 at the bottom layer and the loose layer 13 at the surface layer, such as Figure 4Then continue the cleaning step to remove the loose layer 12 on the surface, leaving the dense layer 11 tightly bonded to the surface of the component 1, such as Figure 4 As shown in d, the above cycle is repeated multiple times to form a dense and smooth CF aging layer with a target thickness on the surface of the component to be treated. Furthermore, after each aging treatment step, a second RF power can be applied separately to bombard and remove or activate the less dense aging layer while enhancing the bonding strength of the desired CF aging layer, so as to effectively remove the loose layer during the cleaning step, retain the dense CF aging layer, and improve the aging effect.

[0098] The following is a detailed description with reference to the embodiments.

[0099] Example

[0100] like Figure 5 As shown, a capacitively coupled plasma (CCP) etching device is provided, which includes a vacuum reaction chamber 500, in which a gas shower head 501 and a base 502 arranged opposite to the gas shower head 501 are arranged. The gas shower head 501 is arranged at the top of the vacuum reaction chamber through a mounting substrate 503. The gas shower head 501 is connected to a gas supply device, which is used to transport reaction gas to the vacuum reaction chamber and serves as the upper electrode of the vacuum reaction chamber. An electrostatic chuck 504 is arranged on the base 502, which is used to support and fix the substrate w and serves as the lower electrode of the vacuum reaction chamber. A reaction area is formed between the upper electrode and the lower electrode. A focusing ring 505 and an edge ring 506 are arranged around the base 502 to adjust the electric field or temperature distribution around the substrate. A plasma confinement ring 507 is arranged around the edge ring 506 to confine the plasma to the reaction area between the upper and lower electrodes to prevent the plasma from leaking into the non-reaction area and causing damage to the components in the non-reaction area.

[0101] The reaction chamber 500, the gas shower head 501, the mounting substrate 503, the focusing ring 505, and the plasma confinement ring 507 are all new parts and need to be aged as a whole. The base 502, the edge ring 506, and the electrostatic chuck 504 can be new parts or old parts with service life. A protective substrate w is set on the electrostatic chuck 504. Before the etching process, the etching equipment is turned on to perform in-situ aging treatment on the parts in the chamber so that they meet the target aging requirements.

[0102] Aging treatment steps: the chamber pressure is controlled at 60mT, and the source RF power is 1000~2500w.

[0103] The first step is to introduce 50 sccm-200 sccm CH 3 F, 10sccm-100sccm C4 F 8 , 0~200sccm O 2 , 100sccm-500sccm CF 4 , 0-500sccm HBr, 20sccm~300sccm NF 3 , 100sccm~200sccm of He, aging treatment for 24s, initially build a base aging layer on the surface of the component. In the second step, the chamber pressure and source RF power remain unchanged, apply a bias RF power of 50w, and pass 0-500sccm of HBr, 20sccm~300sccm of NF 3 , time is 6s, in order to remove the loose part of the surface of the substrate aging layer. In the third step, the chamber pressure and source RF power are the same as the first step, and 0-200sccm O 2 , 0~100sccm CHF 3 , 100sccm~500sccm CF 4 , 0-500 sccm HBr, 0-300 sccm Ar, time for 100 s, to continuously age and deposit on the surface of the substrate aged layer. The fourth step is to apply a bias RF power of 300 W, pass 50 sccm200 sccm CH 3 F, 0~200sccm O 2 , 100 sccm to 200 sccm of He, treatment time 200 s, to remove the loose layer on the surface of the aged layer while enhancing the bonding force between the dense layer and the surface of the component. After the aging treatment step is completed, the protective substrate w is taken out.

[0104] Cleaning step: Pass O into the chamber 2 / Ar / He (0-500sccm / 100-500sccm / 100-500sccm), and apply bias RF power (50-500W) for wafer-free cleaning.

[0105] In one embodiment, the cleaning step is divided into multiple sub-steps, and Ar and He are introduced alternately in two adjacent cleaning sub-steps. The loose surface aged layer is evenly blasted open based on the bombardment effect of alternating different atomic collision volumes, and the aged layer retained at the bottom is squeezed to make it denser, so as to improve the uniformity and density of the aged layer retained in the end.

[0106] The ratio of aging treatment time to cleaning time is about 65:1. The aging treatment steps and cleaning steps are repeated multiple times to prevent excessive aging deposition on the surface of parts in a short time and remove part of the loose aging layer.

[0107] In one embodiment, the target thickness is determined based on the thickness parameter by acquiring the aging layer thickness parameter of the target chamber.

[0108] The thickness parameter is determined based on the thickness of the existing aging layer on the component of the target chamber. Thus, the aging layer state of the aged component is consistent with the aging layer state of other components in the chamber of the component to be replaced, so that the replaced component can be directly applied to the original chamber process state through the aging process of the present invention, without further overall cleaning and aging, with high process stability and yield, and saving chamber pretreatment costs.

[0109] During the rapid aging process, the changing trend of the etching rate (ER) and the like are regularly monitored, and the aging state of the components is detected by opening the cavity. The expected indicators and stability of the ER and other data, the state detection of the component surface and the atomic ratio in the CF aging layer are used to make a judgment. For example, the aging state can be compared with the electron microscope scanning image and atomic ratio of the target aging state required by the customer, until a dense and smooth CF aging layer is formed on the reaction chamber 500, the gas shower head 501, the mounting substrate 503, the focusing ring 505 and the plasma confinement ring 507, and the target aging effect is achieved.

[0110] To summarize, in the present invention, in semiconductor processing equipment, an in-situ aging treatment is performed on components exposed in the chamber. Through multiple cycles of aging treatment and wafer-free cleaning, a dense and smooth CF aging layer is formed on the surface of the components. The layer has a strong bonding force and meets the aging requirements of customers. The layer is used in the wafer etching process and can effectively maintain the stability of the etching process.

[0111] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A method for treating aging of semiconductor processing equipment parts. It is characterized in that Include: A semiconductor processing device is provided, comprising: a chamber and a component to be processed installed in the chamber; Aging treatment step: introducing a first process gas into the chamber to deposit and form a CF aging layer on the surface of the component to be treated; Cleaning step: introducing a second process gas into the chamber to remove the loose layer on the surface of the CF aged layer and retain the dense and smooth CF aged layer.

2. The method for treating semiconductor processing equipment parts by aging as claimed in claim 1, It is characterized in that The first process gas comprises C x H y F z Gas, where x>0, y≥0, z>0.

3. The aging treatment method for semiconductor processing equipment parts according to claim 2, It is characterized in that The C-containing x H y F z The gas is CH 3 F.C 4 F 8 , CHF 3 , CH 2 F 2 and CF 4 At least one of .

4. The aging treatment method for semiconductor processing equipment parts according to claim 2, It is characterized in that The first process gas further comprises O 2 .

5. The aging treatment method for semiconductor processing equipment parts according to claim 2, It is characterized in that The first process gas further comprises HBr and NF 3 At least one of .

6. The aging treatment method for semiconductor processing equipment parts according to claim 2, It is characterized in that The first process gas further includes a carrier gas, and the carrier gas is at least one of Ar and He.

7. The aging treatment method for semiconductor processing equipment parts according to claim 1, It is characterized in that The second process gas includes: an oxygen-containing gas.

8. The aging treatment method for semiconductor processing equipment parts according to claim 7, It is characterized in that The oxygen-containing gas is O 2 or 3 .

9. The method for treating semiconductor processing equipment parts during aging according to claim 1, It is characterized in that The second process gas includes: a fluorine-containing gas.

10. The method for treating semiconductor processing equipment parts during aging according to claim 9, It is characterized in that The fluorine-containing gas is NF 3 .

11. The method for treating semiconductor processing equipment parts according to claim 1, It is characterized in that The second process gas includes a carrier gas, and the carrier gas is at least one of Ar and He.

12. The method for treating semiconductor processing equipment parts according to claim 1, It is characterized in that In the aging treatment step, the process pressure is 0 mT to 300 mT.

13. The method for treating semiconductor processing equipment parts during aging according to claim 1, It is characterized in that In the cleaning step, a first bias RF power is applied.

14. The method for treating semiconductor processing equipment parts during aging according to claim 13, It is characterized in that The first bias RF power is 50W to 300W.

15. The method for treating semiconductor processing equipment parts during aging according to claim 13, It is characterized in that The process interval phase between the aging step and the cleaning step includes a first transition step, wherein the first transition step applies a second bias RF power.

16. The method for treating semiconductor processing equipment parts during aging according to claim 15, It is characterized in that The first bias RF power is greater than the second bias RF power.

17. The method for treating semiconductor processing equipment parts during aging according to claim 1, It is characterized in that The time period ratio of the aging step to the cleaning step is 60-70:

1.

18. The method for treating semiconductor processing equipment parts during aging according to claim 1, It is characterized in that The semiconductor processing equipment also includes an electrostatic chuck; before the aging treatment step begins, a protective substrate is covered on the electrostatic chuck; before the cleaning step begins, the protective substrate is removed.

19. The method for treating semiconductor processing equipment parts during aging according to claim 1, It is characterized in that The initial temperature of the component to be processed is lower than the average initial temperature of the chamber.

20. The method for treating semiconductor processing equipment parts during aging according to claim 15, It is characterized in that The aging treatment step includes a first aging step and a second aging step, wherein a second transition step is provided between the first aging step and the second aging step, wherein the second transition step applies a third bias RF power, and the third bias RF power is less than the second bias RF power.

21. The method for treating semiconductor processing equipment parts during aging according to claim 20, It is characterized in that The gas introduced into the first aging step includes CH 3 F.C 4 F 8 NF 3 、He.

22. The method for treating semiconductor processing equipment parts according to claim 20, It is characterized in that The gas introduced into the second aging step includes CHF 3 、Ar。 23. The method for treating semiconductor processing equipment parts during aging according to claim 20, It is characterized in that The process duration of the first aging step is shorter than the process duration of the second aging step.

24. The method for treating semiconductor processing equipment parts during aging according to claim 20, It is characterized in that The second transition step introduces gases including HBr and NF 3 .

25. The method for treating semiconductor processing equipment parts during aging according to claim 22, It is characterized in that The first transition step introduces a gas comprising CH 3 F.O 2 and He.

26. The method for treating semiconductor processing equipment parts during aging according to claim 23, It is characterized in that The process duration of the second transition step is shorter than the process duration of the first aging step.

27. The method for treating semiconductor processing equipment parts during aging according to claim 23, It is characterized in that The process time of the first transition step is longer than the process time of the second aging step.

28. The aging treatment method for semiconductor processing equipment parts according to claim 6 or 11, It is characterized in that Ar and He are introduced alternately into the carrier gas.

29. The aging treatment method for semiconductor processing equipment parts according to any one of claims 1 to 28, It is characterized in that The aging treatment step and the cleaning step are repeated for multiple times to form a dense and smooth CF aging layer with a target thickness on the surface of the component to be treated.

30. The method for treating semiconductor processing equipment parts during aging as claimed in claim 29, It is characterized in that The aging layer thickness parameter of the target chamber is obtained, and the target thickness is determined based on the thickness parameter.

31. The method for treating semiconductor processing equipment parts during aging as claimed in claim 30, It is characterized in that The thickness parameter is determined based on the thickness of the existing aging layer on the component of the target chamber.

32. A semiconductor processing device, It is characterized in that It comprises at least one component, on which is formed a CF aging layer formed by the aging treatment method according to any one of claims 1 to 31.

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