Reconfigurable bidirectional amplifier based on artificial surface plasmon

Abstract

The reconfigurable bidirectional amplifier comprises a first artificial surface plasmon transmission line, a second artificial surface plasmon transmission line, a third artificial surface plasmon transmission line and a switch amplification multifunctional chip, the first artificial surface plasmon transmission line, the second artificial surface plasmon transmission line and the third artificial surface plasmon transmission line are loaded on a dielectric substrate, and the lengths of the first artificial surface plasmon transmission line and the second artificial surface plasmon transmission line are the same. The switch amplification multifunctional chip port comprises a port A, a port B, a port C and a port D. The port A is connected with the SMA connector port through a first artificial surface plasmon transmission line, the port B is connected with the SMA connector port through a second artificial surface plasmon transmission line, the port C is connected with the control port I through a third artificial surface plasmon transmission line, and the port D is connected with the control port II through a third artificial surface plasmon transmission line. The port D is connected with the control port II through a power-up control wire; reconfigurable bidirectional amplification of the switch amplification multifunctional chip is realized by controlling the power-up voltages of the port C and the port D. The reconfigurable bidirectional amplifier can be applied to a transceiving system and has important engineering implementation value.

Description

Technical Field

[0001] The invention belongs to the field of novel artificial electromagnetic materials and relates to a reconfigurable bidirectional amplifier based on artificial surface plasmons. Background Art

[0002] The properties of natural materials are mainly determined by the intrinsic properties and arrangement of the microscopic particles (such as molecules and atoms) that make up the materials. However, the physical size of microscopic particles is very small, and they can only interact with microscopic physical fields (such as visible light) with wavelengths comparable to them, and their ability to manipulate macroscopic physical fields (such as microwaves and sound waves) is limited. In order to solve the above problems, metamaterials enhance the ability to manipulate the characteristics of macroscopic physical fields by constructing artificial microstructures with sizes between microscopic particles and the wavelengths of macroscopic physical fields, breaking through the capabilities of natural materials, such as achieving negative dielectric constants, negative magnetic permeability, zero refractive index and equivalent negative mass, etc., to meet the urgent needs of scientific and technological development (such as super-resolution lenses and perfect invisibility, etc.).

[0003] Surface plasmon polaritons (SPPs) are surface waves that propagate along an interface where two media have opposite dielectric constants at optical frequencies. Plasmon metamaterials are produced by constructing subwavelength structures on metal surfaces. Surface plasmons have significant field confinement and field enhancement effects. Artificial surface plasmons (Spoof Surface Plasmon Polaritons (SSPPs) simulate the characteristics of SPPs by constructing plasma metal surfaces. They have the advantage of regulating electromagnetic waves on a subwavelength scale and manipulating the intrinsic characteristics of the mode such as cutoff frequency, bound state and propagation speed in the microwave or terahertz frequency band. Metasurfaces can regulate and control electromagnetic waves in space. Artificial surface plasmon metamaterials can effectively manipulate the electromagnetic modes of surface waveguides and regulate electromagnetic waves on a subwavelength scale. Due to their flexibility, broadband and low loss, conformal surface plasmons formed by ultrathin corrugated metal strips represent a slow-wave waveguide for propagating artificial surface plasmons. In previous reports, three types of artificial surface plasmon transmission lines have been reported, including ungrounded single-conductor artificial surface plasmon transmission lines, grounded single-conductor artificial surface plasmon transmission lines and dual-conductor artificial surface plasmon transmission lines. Using artificial surface plasmon transmission lines, crosstalk suppression at deep subwavelength distances has been achieved. A series of artificial surface plasmon passive devices, such as filters, couplers, power dividers, combiners and antennas, artificial surface plasmon active devices, such as amplifiers and second harmonic generators, and artificial surface plasmon-based wireless communication systems have been studied and verified theoretically and experimentally.

[0004] With the further development of artificial surface plasmons, direct amplification is needed in the link. Previous reports only amplified in one direction and the amplification direction cannot be changed. If both the receiving channel and the transmitting channel in the transceiver system need to amplify the signal, then twice the number of unidirectional amplifiers will be used, and the size of the multi-channel microwave components in the transceiver system will also be greatly expanded. Summary of the invention

[0005] Purpose of the invention: The purpose of the present invention is to provide a reconfigurable bidirectional amplifier based on artificial surface plasmons.

[0006] Technical solution: The reconfigurable bidirectional amplifier based on artificial surface plasmons of the present invention comprises a first artificial surface plasmon transmission line, a second artificial surface plasmon transmission line, a third artificial surface plasmon transmission line, a power-on control wire and a switch amplifier multifunctional chip loaded on a dielectric substrate. The artificial surface plasmon transmission line comprises a microstrip line and a plurality of periodically arranged artificial surface plasmon units. The first artificial surface plasmon transmission line and the second artificial surface plasmon transmission line have the same length and the same number of artificial surface plasmon units. The switch amplifier multifunctional chip ports comprise port A, port B, and port C. B, port C and port D, port A is connected to the SMA connector port through the first artificial surface plasmon transmission line; port B is connected to the SMA connector port through the second artificial surface plasmon transmission line; port C is connected to the first power-on control port I through the third artificial surface plasmon transmission line; port D is connected to the second power-on control port II through the power-on control wire, and the reconfigurable bidirectional amplification function of the switch amplification multifunctional chip is realized by controlling the power-on control voltage of port C and port D. At the same time, the cut-off frequency of the artificial surface plasmon unit is used to realize the low-pass filtering function of the reconfigurable bidirectional amplifier.

[0007] Optionally, when port C and port D of the switch amplifier multifunctional chip are powered with +5V and 0V respectively, a forward amplification function is realized, and when port C and port D of the switch amplifier multifunctional chip are powered with 0V and +5V respectively, a reverse amplification function is realized.

[0008] Optionally, a DC blocking capacitor is connected in series between port A of the switch amplifier multifunctional chip and the first artificial surface plasmon transmission line, and between port B of the switch amplifier multifunctional chip and the second artificial surface plasmon transmission line; a filter capacitor is connected in parallel between port C of the switch amplifier multifunctional chip and the third artificial surface plasmon transmission line, and between port D of the switch amplifier multifunctional chip and the power-on control wire.

[0009] Optionally, gold wires are bonded and integrated between ports A and B of the switch amplifier multifunctional chip and the corresponding DC blocking capacitors, between ports C and D and the corresponding filter capacitors, and between the third artificial surface plasmon transmission line and the power-on control wire and the corresponding filter capacitors through a microassembly process, and the first artificial surface plasmon transmission line and the second artificial surface plasmon transmission line and the corresponding DC blocking capacitors are respectively bonded with conductive glue.

[0010] Optionally, the artificial surface plasmon unit includes a top metal layer, a bottom metal ground layer and an intermediate dielectric layer.

[0011] Optionally, the top metal layer adopts an open bend line design.

[0012] Optionally, by changing the bending line parameters, the dispersion curve is regulated in the microwave frequency band to obtain a customized cutoff frequency and realize a low-pass filtering function.

[0013] Optionally, the bottom metal floor adopts a large-area paving design.

[0014] Optionally, the middle dielectric layer is RO4350B, with a dielectric constant of 3.48 and a loss tangent of 0.0037.

[0015] The present invention also provides a transceiver system, comprising the reconfigurable bidirectional amplifier based on artificial surface plasmon.

[0016] Beneficial effects: Compared with the prior art, the significant technical effects of the present invention are: (1) by changing the geometric dimensions of the artificial surface plasmon unit, the cutoff frequency of the microwave circuit can be customized, and no additional large-size filter is required, thereby greatly reducing the size of the microwave product; (2) the reconfigurable bidirectional amplifier based on artificial surface plasmon in the present invention can realize the function of reconfigurable bidirectional amplification by adjusting the external voltage and switching the switch integrated in the bidirectional amplifier, and can be applied to the transceiver system; (3) the reconfigurable bidirectional amplifier based on artificial surface plasmon in the present invention has the advantages of high gain, good gain flatness and high out-of-band suppression. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 An artificial surface plasmon unit in an embodiment of the present invention;

[0018] Figure 2 The simulation result of the dispersion curve of the artificial surface plasmon unit in the embodiment of the present invention;

[0019] Figure 3 Schematic diagram of the design of a reconfigurable bidirectional amplifier based on artificial surface plasmon in an embodiment of the present invention;

[0020] Figure 41 is a physical diagram of a reconfigurable bidirectional amplifier based on artificial surface plasmon in an embodiment of the present invention; wherein (a) is a front schematic diagram, (b) is a back schematic diagram, and (c) is a partial enlarged diagram;

[0021] Figure 5 This is a schematic diagram of a switch amplification multifunctional chip solution block diagram in an embodiment of the present invention;

[0022] Figure 6 This is a schematic diagram of a physical test in an embodiment of the present invention;

[0023] Figure 7 This is a diagram showing the simulation results of transmission characteristics of a transmission line based on SSPPs in an embodiment of the present invention;

[0024] Figure 8 This is a test result diagram of the transmission characteristics of a bidirectional amplifier based on SSPPs in an embodiment of the present invention;

[0025] Fig. 9 This is a phase test result diagram of a bidirectional amplifier based on SSPPs in an embodiment of the present invention. DETAILED DESCRIPTION

[0026] The technical solution of the present invention is further described below in conjunction with the embodiments and the accompanying drawings.

[0027] The following embodiments are only preferred implementation modes of the present invention. It should be pointed out that, for ordinary technicians in this technical field, several improvements and equivalent substitutions can be made without departing from the principles of the present invention. These technical solutions after improvements and equivalent substitutions to the claims of the present invention all fall within the protection scope of the present invention.

[0028] In the transceiver system, several microwave devices, such as limiters, attenuators, filters, single-pole single-throw switches, digitally controlled attenuators, and digitally controlled phase shifters, can be used in bidirectional microwave signal transmission links. Therefore, according to the actual needs of the transceiver system, the artificial surface plasmon transmission line is integrated with the switch amplifier multifunctional chip, combined with the micro-assembly process, which can reconstruct forward amplification and reverse amplification, and on this basis, it has the function of low-pass filtering. This research work first designs an artificial surface plasmon unit through a bending line, and then designs an artificial surface plasmon transmission line based on the artificial surface plasmon unit. Based on the artificial surface plasmon transmission line and the bidirectional amplifier, a reconfigurable bidirectional amplifier based on artificial surface plasmon is designed. The reconfigurable bidirectional amplifier has the functions of reconfigurable forward amplification, reverse amplification and low-pass filtering. Therefore, the reconfigurable bidirectional amplifier in the present invention can be combined with devices such as a limiter, an attenuator, a filter, a single-pole single-throw switch, a digitally controlled attenuator and a digitally controlled phase shifter with bidirectional microwave signal processing to build a transceiver link, and a separate receiving channel and a separate transmitting channel are merged into a transceiver channel, which has important engineering significance for the miniaturization of the transceiver system.

[0029] In the embodiment of the present invention, the artificial surface plasmon unit is as follows Figure 1 As shown, it includes a top metal layer 101, a bottom metal ground 102 and an intermediate dielectric layer, and the intermediate dielectric layer is between the top metal layer 101 and the bottom metal ground 102. The unit is a double-sided copper-clad structure. The traditional artificial surface plasmon unit adopts a groove design. The top metal layer 101 in the embodiment of the present invention uses an open bending line design. Compared with the traditional artificial surface plasmon unit, the artificial surface plasmon unit designed with a bending line in the embodiment of the present invention can achieve the same cut-off frequency with a smaller size, thereby achieving miniaturization. It should be pointed out that the bending line in the embodiment of the present invention is only a way to achieve a miniaturized artificial surface plasmon unit, and several improvements and equivalent substitutions can also be made. These technical solutions after improvements and equivalent substitutions to the present invention all fall within the protection scope of the present invention. The bottom metal ground 102 adopts a large-area paving design, and the intermediate dielectric layer is RO4350B, with a dielectric constant of 3.48 and a loss tangent of 0.0037. By changing Figure 1 The parameters of the meander line structure d, We, and p of the top metal layer are used to adjust the dispersion curve in the microwave frequency band to obtain a customized cutoff frequency. The artificial surface plasmon unit designed using the meander line can be applied to miniaturized systems. In existing engineering projects, large-size filters occupy a large area of ​​space in microwave circuits. To address this problem, artificial surface plasmon transmission lines have the function of filtering, which provides a solution for the miniaturization and low cost of microwave circuits.

[0030] The dispersion curve simulation results of the artificial surface plasmon unit in the embodiment of the present invention are as follows: Figure 2As shown, the dispersion curve of the artificial surface plasmon unit gradually deviates from the light and finally reaches a cutoff frequency of 17.78 GHz.

[0031] Artificial surface plasmon units are arranged periodically, and an artificial surface plasmon transmission line is designed. The artificial surface plasmon transmission line includes a microstrip line and several periodically arranged artificial surface plasmon units. The transmission line not only has the characteristics of transmission, but also has the function of low-pass filtering. The function of low-pass filtering here is to utilize the cutoff frequency characteristics of artificial surface plasmons. The reconfigurable bidirectional amplifier has good gain flatness and high gain performance within the working bandwidth. The combination of cutting-edge technology and engineering implementation has important engineering implementation value.

[0032] A reconfigurable bidirectional amplifier based on artificial surface plasmon transmission line and switch amplifier multifunctional chip is designed. The artificial surface plasmon transmission line and the switch amplifier multifunctional chip are integrated and designed. It has the functions of reconfigurable bidirectional amplification, high gain, good gain flatness and low-pass filtering, and can be used in transceiver systems.

[0033] The schematic diagram of the design of a reconfigurable bidirectional amplifier based on artificial surface plasmon in an embodiment of the present invention is shown in FIG. Figure 3As shown, it mainly includes a first artificial surface plasmon transmission line 1, a second artificial surface plasmon transmission line 2, a third artificial surface plasmon transmission line 3, a power-on control wire 4 and a switch amplifier multifunctional chip 5 loaded on a PCB dielectric substrate. The first and second artificial surface plasmon transmission lines are radio frequency transmission lines, and the third artificial surface plasmon transmission line and the power-on control wire are power-on control wires. The ports of the switch amplifier multifunctional chip 5 are composed of port A, port B, port C and port D, wherein port A and port B are radio frequency ports, and port C and port D are power-on control ports. The first artificial surface plasmon transmission line, the second artificial surface plasmon transmission line, the third artificial surface plasmon transmission line and the power-on control wire are interconnected with the switch amplifier multifunctional chip through capacitors and gold wires. One end of the first artificial surface plasmon transmission line 1 is connected to the SMA connector port for testing, and the other end is bonded with a DC blocking capacitor in series using conductive glue, and then two gold wires are bonded with the port A of the switch amplifier multifunctional chip using a microassembly process. A DC blocking capacitor is added between the artificial surface plasmon transmission line and the switch amplifier multifunctional chip to protect the test instrument; one end of the second artificial surface plasmon transmission line 2 is connected to the SMA connector port for testing, and the other end is also bonded with a DC blocking capacitor in series using conductive glue, and then two gold wires are bonded with the port B of the switch amplifier multifunctional chip using a microassembly process; the third artificial surface plasmon transmission line One end of line 3 is connected to the first control port I, and two gold wires are bonded to the filter capacitor by micro-assembly process. After the filter capacitor is connected in parallel, two gold wires are bonded from the filter capacitor to port C of the switch amplifier multifunctional chip. The third artificial surface plasmon transmission line 3 mainly verifies whether the artificial surface plasmon transmission line can be used as a power-on control line; one end of the power-on control wire 4 is connected to the second control port II, and two gold wires are bonded to the filter capacitor by micro-assembly process. After the filter capacitor is connected in parallel, two gold wires are bonded from the filter capacitor to port D of the switch amplifier multifunctional chip. The power-on control wire 4 is used for powering on and controlling port D of the switch amplifier multifunctional chip. The filter capacitors at ports C and D function as power supply filtering. The two filter capacitors and the switch amplifier multifunctional chip are bonded to the ground pad by conductive glue. The reconfigurable bidirectional amplification function of the switch amplifier multifunctional chip is realized by controlling the power-on control voltage of ports C and D of the switch amplifier multifunctional chip. On this basis, the low-pass filtering function of the artificial surface plasmon transmission line is added. The threaded hole 6, the SMA grounding pad 7 and the SMA connector are used for testing. The threaded hole 6 is used to support the circuit board with screws; the SMA grounding pad 7 is used to weld the SMA connector ear to the circuit board; the grounding pad 8 is externally welded with an aviation wire for grounding, and the grounding wire 9 is used to ensure that the switch amplifier multifunctional chip has good grounding performance.

[0034] The artificial surface plasmon transmission line includes a microstrip line and a plurality of periodically arranged artificial surface plasmon units. The first artificial surface plasmon transmission line and the second artificial surface plasmon transmission line have the same length and the same number of artificial surface plasmon units, so as to ensure that the first artificial surface plasmon transmission line and the second artificial surface plasmon transmission line have the same transmission and filtering characteristics. In this embodiment, the first artificial surface plasmon transmission line and the second artificial surface plasmon transmission line are both composed of 10 artificial surface plasmon units, and the third transmission line is composed of 5 artificial surface plasmon units.

[0035] The physical diagram of the reconfigurable bidirectional amplifier based on artificial surface plasmon and the schematic diagram of the switch amplification multifunctional chip solution block diagram in the embodiment of the present invention are shown in FIG. Figure 4 and Figure 5 As shown, the front schematic diagram, back schematic diagram and partial enlarged diagram of the reconfigurable bidirectional amplifier based on artificial surface plasmon are shown in Figure 4As shown in (a), (b) and (c). The reconfigurable bidirectional amplifier is implemented by 2-bit encoding, and the 2-bit encoding information includes "00", "01", "10" and "11", wherein "0" represents that the power-on control voltage of the switch amplifier multifunctional chip is 0V; "1" represents that the power-on control voltage of the switch amplifier multifunctional chip is +5V; the switch amplifier multifunctional chip comprises a first single-pole double-throw switch E, a second single-pole double-throw switch F, a first amplifier M and a second amplifier N, the first amplifier M amplifies from left to right (i.e., forward amplification), and the second amplifier N amplifies from right to left (i.e., reverse amplification), the normally closed contact of the first single-pole double-throw switch E is connected to the port A of the switch amplifier multifunctional chip, and the normally open contact is connected to the first amplifier M or the second amplifier N; the normally closed contact of the second single-pole double-throw switch F is connected to the port B of the switch amplifier multifunctional chip, and the normally open contact is connected to the first amplifier M or the second amplifier N. When the power-on voltage of the switch amplifier multifunctional chip is 0V, the amplifier in the switch amplifier multifunctional chip does not work. When the power-on voltage of the switch amplifier multifunctional chip is +5V, the amplifier in the switch amplifier multifunctional chip works normally. "10" represents forward amplification conduction, "10" means that the power-on voltages of port C and port D of the switch amplifier multifunctional chip are +5V and 0V respectively, the first amplifier M works normally, the second amplifier N does not work, and the two single-pole double-throw switches are both cut to the first amplifier M branch, and the entire link is connected; "01" represents reverse amplification conduction, "01" means that the power-on voltages of port C and port D of the switch amplifier multifunctional chip are 0V and +5V respectively, the first amplifier M does not work, the second amplifier N works normally, the two single-pole double-throw switches are both cut to the second amplifier N branch, and the entire link is connected; "0 "0" indicates that the power-on voltages of port C and port D of the switch amplifier multifunctional chip are 0V respectively, the first amplifier M and the second amplifier N do not work, the first single-pole double-throw switch E is switched to the second amplifier N branch, the second single-pole double-throw switch F is switched to the first amplifier M branch, both amplifiers do not work, and the link is blocked; "11" indicates that the power-on voltages of port C and port D of the switch amplifier multifunctional chip are +5V respectively, the first amplifier M and the second amplifier N work normally, the first single-pole double-throw switch E is switched to the first amplifier M branch, the second single-pole double-throw switch F is switched to the second amplifier N branch, and the link is blocked.

[0036] The schematic diagram of the physical test in the embodiment of the present invention is as follows Figure 6 As shown, the vector network model is N5232A, 300kHz~20GHz, and the power supply model is GPS-3303C.

[0037] The simulation results of the transmission characteristics of the transmission line based on SSPPs in the embodiment of the present invention are shown in FIG. Figure 7As shown, it is concluded that an artificial surface plasmon transmission line is designed based on a miniaturized artificial surface plasmon unit, and the transmission line not only has the characteristics of transmission, but also has the property of out-of-band suppression.

[0038] The test results of the transmission characteristics of the bidirectional amplifier based on SSPPs in the embodiment of the present invention are shown in the figure Figure 8 As shown, it is concluded that: from 2 to 15 GHz, the forward amplification link achieves a gain of 15.90 to 20.50 dB, and the reverse amplification link achieves a gain of 16.78 to 20.46 dB; from 2 to 15 GHz, the gain flatness of the forward amplification link is 4.60 dB, and the gain flatness of the reverse amplification link is 3.68 dB; from 18.9 to 20 GHz, the out-of-band suppression of the forward amplification link exceeds 49.53 dBc, and the out-of-band suppression of the reverse amplification link exceeds 52.02 dBc.

[0039] The phase test results in the embodiment of the present invention are as follows: Fig. 9 As shown, it can be concluded that from 2 to 19.47 GHz, the phase curve has no distortion.

[0040] The innovation of the present invention is that the artificial surface plasmon transmission line is integrated with the switch amplification multifunctional chip, combined with the micro-assembly process, and the forward amplification and reverse amplification can be reconfigured. The field-circuit joint simulation technology is used to simulate and verify the reconfigurable bidirectional amplifier, and the cutting-edge technology is combined with engineering implementation to realize the functions of low-pass filtering, bidirectional amplification, and reconfigurable amplification direction. It can be applied to the transceiver system and has important engineering implementation value.

[0041] The present invention also provides a transceiver system, comprising the reconfigurable bidirectional amplifier based on artificial surface plasmon.

Claims

1. A reconfigurable bidirectional amplifier based on artificial surface plasmons, characterized in that: The invention comprises a first artificial surface plasmon transmission line, a second artificial surface plasmon transmission line, a third artificial surface plasmon transmission line, a power-on control wire and a switch amplification multifunctional chip loaded on a dielectric substrate. The artificial surface plasmon transmission line comprises a microstrip line and a plurality of periodically arranged artificial surface plasmon units. The first artificial surface plasmon transmission line and the second artificial surface plasmon transmission line have the same length and the same number of artificial surface plasmon units. The switch amplification multifunctional chip ports comprise port A, port B, port C and port D. Port A is connected to an SMA connector port through the first artificial surface plasmon transmission line. Port B is connected to an SMA connector port through the second artificial surface plasmon transmission line. Port C is connected to a first power-on control port I through a third artificial surface plasmon transmission line. Port D is connected to a second power-on control port II through a power-on control wire. The reconfigurable bidirectional amplification function of the switch amplification multifunctional chip is realized by controlling the power-on control voltages of port C and port D. Meanwhile, the low-pass filtering function of the reconfigurable bidirectional amplifier is realized by utilizing the cutoff frequency of the artificial surface plasmon unit.

2. The reconfigurable bidirectional amplifier based on artificial surface plasmon according to claim 1, characterized in that: When port C and port D of the switch amplifier multifunctional chip are powered with +5V and 0V respectively, the forward amplification function is realized. When port C and port D of the switch amplifier multifunctional chip are powered with 0V and +5V respectively, the reverse amplification function is realized.

3. The reconfigurable bidirectional amplifier based on artificial surface plasmon according to claim 1, characterized in that: A DC blocking capacitor is connected in series between port A of the switch amplifier multifunctional chip and the first artificial surface plasmon transmission line, and between port B of the switch amplifier multifunctional chip and the second artificial surface plasmon transmission line; a filter capacitor is connected in parallel between port C of the switch amplifier multifunctional chip and the third artificial surface plasmon transmission line, and between port D of the switch amplifier multifunctional chip and the power-on control wire.

4. The reconfigurable bidirectional amplifier based on artificial surface plasmon according to claim 3, characterized in that: Ports A and B of the switch amplifier multifunctional chip and the corresponding DC blocking capacitors, port C and port D and the corresponding filter capacitors, and the third artificial surface plasmon transmission line and the power-on control wire and the corresponding filter capacitors are integrated by bonding gold wires through a micro-assembly process, and the first artificial surface plasmon transmission line and the second artificial surface plasmon transmission line are respectively bonded to the corresponding DC blocking capacitors by conductive glue.

5. The reconfigurable bidirectional amplifier based on artificial surface plasmon according to claim 1, characterized in that: The artificial surface plasmon unit includes a top metal layer, a bottom metal ground layer and an intermediate dielectric layer.

6. The reconfigurable bidirectional amplifier based on artificial surface plasmon according to claim 5, characterized in that: The top metal layer adopts an open bend line design.

7. The reconfigurable bidirectional amplifier based on artificial surface plasmon according to claim 6, characterized in that: By changing the bending line parameters, the dispersion curve is regulated in the microwave frequency band to obtain a customized cutoff frequency and realize the low-pass filtering function.

8. The reconfigurable bidirectional amplifier based on artificial surface plasmon according to claim 5, characterized in that: The bottom metal floor adopts a large-area paving design.

9. The reconfigurable bidirectional amplifier based on artificial surface plasmon according to claim 5, characterized in that: The middle dielectric layer is RO4350B, with a dielectric constant of 3.48 and a loss tangent of 0.0037.

10. A transceiver system, characterized in that: A reconfigurable bidirectional amplifier based on artificial surface plasmons comprising any one of claims 1 to 9.

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