Display device

Abstract

A display device is provided. The display device includes: a base member; a first dam member, a first support member, a second dam member, and a second support member in the non-display area on the base member; a light emitting element disposed in the display area on the base member; a first encapsulation layer on the light emitting element; a wavelength conversion pattern disposed on the first encapsulation layer to overlap the light emitting element; a color filter disposed on the wavelength conversion pattern and overlapping the wavelength conversion pattern; and a second encapsulation layer on the color filter; wherein: the first dam member is located between the first support member and the display area; the first support member is located between the second dam member and the first dam member; the second dam member is located between the second support member and the first support member; an end portion of the inorganic layer included in the first encapsulation layer is located between the first support member and the first dam member; and an end portion of the inorganic layer included in the second encapsulation layer is located between the second support member and the second dam member.

Description

[0001] This application is a divisional application of the application with the application date of November 2, 2020, application number 202080102410.0, and invention name "Display Device". Technical Field

[0002] The present disclosure relates to a display device. Background Art

[0003] With the development of multimedia, the importance of display devices has gradually increased. Accordingly, various display devices, such as liquid crystal display devices (LCDs) and organic light emitting diode display devices (OLEDs), have been developed.

[0004] Among these display devices, self-emitting display devices include self-emitting elements, such as organic light emitting elements. The self-emitting element may include two electrodes facing each other and an emission layer interposed between the two electrodes. When the self-emitting element is an organic light emitting element, electrons and holes provided from the two electrodes recombine with each other in the emission layer to generate excitons, and light may be emitted while the generated excitons change from an excited state to a ground state.

[0005] Since the self-emitting display device does not require a light source such as a backlight unit, it has low power consumption, can be configured to be lightweight and thin, and has high-quality characteristics, such as a wide viewing angle, high brightness and contrast, and a fast response speed. Accordingly, the self-emitting display device has drawn attention as a next-generation display device. Summary of the Invention

[0006] Technical Problem

[0007] As a method of allowing each pixel of a display device to uniquely display one primary color, there may be a method of providing a color conversion pattern or a wavelength conversion pattern for each pixel on an optical path from a light source to a viewer.

[0008] Aspects of the present disclosure provide a display device whose display quality can be improved.

[0009] However, aspects of the present disclosure are not limited to those described herein. The above and other aspects of the present disclosure will become more apparent to those of ordinary skill in the art to which the present disclosure pertains by referring to the following detailed description of the present disclosure.

[0010] Technical Solution

[0011] According to one aspect of the present disclosure, a display device is provided, which includes: a base member, in which a display area and a non-display area surrounding the display area are defined; a first dam member, a first support member, a second dam member, and a second support member, which are located on the base member and in the non-display area; a light-emitting element, which is located on the base member and in the display area; a first encapsulation layer, which is located on the light-emitting element; a wavelength conversion pattern, which is located on the first encapsulation layer and overlaps with the light-emitting element; a color filter, which is located on the wavelength conversion pattern and overlaps with the wavelength conversion pattern; and a second encapsulation layer, which is located on the color filter, wherein the first dam member is located between the first support member and the display area, the first support member is located between the second dam member and the first dam member, the second dam member is located between the second support member and the first support member, an end portion of an inorganic layer included in the first encapsulation layer is located between the first support member and the first dam member, and an end portion of an inorganic layer included in the second encapsulation layer is located between the second support member and the second dam member.

[0012] In some embodiments, the first dam member may be arranged to surround the display area, the first support member may be arranged to surround the first dam member, the second dam member may be arranged to surround the first support member, and the second support member may be arranged to surround the second dam member.

[0013] In some embodiments, the second encapsulation layer may include a lower inorganic layer located on the color filter, an organic layer located on the lower inorganic layer, and an upper inorganic layer located on the organic layer, and end portions of the lower inorganic layer and the upper inorganic layer may be located between the second support member and the second dam member.

[0014] In some embodiments, a part of the organic layer may be located between the second dam member and the first dam member.

[0015] In some embodiments, the display device may further include a bank pattern located on the first encapsulation layer and surrounding the wavelength conversion pattern, wherein at least one of the second support member and the second dam member and the bank pattern may include the same material.

[0016] In some embodiments, the display device may further include an outer coating located between the color filter and the wavelength conversion pattern, wherein the second support member may include the same material as the color filter or the outer coating.

[0017] In some embodiments, the display device may further include a bank pattern located on the first encapsulation layer and surrounding the wavelength conversion pattern, wherein the second dam member may include the same material as at least one of the color filter, the outer coating, and the bank pattern.

[0018] In some embodiments, the first encapsulation layer may include a lower inorganic layer on the light-emitting element, an organic layer on the lower inorganic layer, and an upper inorganic layer on the organic layer. The lower inorganic layer and the upper inorganic layer may cover the first dam member, and an end of the lower inorganic layer may be located between the first dam member and the first support member.

[0019] In some embodiments, the first dam member may include a first dam and a second dam spaced apart from each other, and a portion of the organic layer may be located in a space between the first dam and the second dam.

[0020] In some embodiments, an end of the upper inorganic layer may be located between the first dam member and the first support member.

[0021] In some embodiments, an end of the upper inorganic layer may be located outside the second support member, and the second support member may be located between the end of the upper inorganic layer and the display area.

[0022] In some embodiments, the display device may further include connection pads on the base member and in the non-display area, where the second support member may be located between the connection pads and the display area, and the connection pads may not overlap with the second encapsulation layer.

[0023] In some embodiments, the display device may further include: a first cover layer between the first encapsulation layer and the wavelength conversion pattern; and a second cover layer between the wavelength conversion pattern and the color filter. The first cover layer and the second cover layer may be in contact with each other in the non-display area, and the first cover layer and the second cover layer may overlap with the connection pads.

[0024] In some embodiments, the display device may further include a cover layer between the wavelength conversion pattern and the color filter. The inorganic layer included in the first encapsulation layer and the cover layer may be in contact with each other in the non-display area, and the inorganic layer included in the first encapsulation layer and the cover layer may overlap with the connection pads.

[0025] According to another aspect of the present disclosure, a display device is provided, which includes: a base member, in which a display area and a non-display area surrounding the display area are defined; a dam member and a support member, which are located on the base member and in the non-display area; a connection pad, which is located on the base member and in the non-display area; a light-emitting element, which is located on the base member and in the display area; an inorganic layer, which is located on the light-emitting element; a wavelength conversion pattern, which is located on the inorganic layer and overlaps with the light-emitting element; a cover layer, which is located on the wavelength conversion pattern; and a color filter, which is located on the cover layer and overlaps with the wavelength conversion pattern, wherein the dam member is located between the support member and the display area, the support member is located between the connection pad and the dam member, the inorganic layer and the cover layer are in contact with each other in the non-display area, and the inorganic layer and the cover layer overlap with the connection pad.

[0026] In some other embodiments, an opening exposing the connection pad may be defined in the inorganic layer and the cover layer.

[0027] In some other embodiments, the display device may further include: a bank pattern, which is located between the inorganic layer and the cover layer and in contact with the wavelength conversion pattern, wherein the dam member and the bank pattern may include the same material.

[0028] In some other embodiments, the display device may further include: an outer coating, which is located between the color filter and the wavelength conversion pattern, wherein the support member may include the same material as at least one of the bank pattern, the color filter, and the outer coating.

[0029] In some other embodiments, the refractive index of the outer coating may be lower than the refractive index of the wavelength conversion pattern.

[0030] In some other embodiments, the display device may further include: a packaging layer, which is located on the color filter and includes a lower inorganic layer, an upper inorganic layer, and an organic layer located between the lower inorganic layer and the upper inorganic layer, wherein the dam member may overlap with the lower inorganic layer and the upper inorganic layer, and the connection pad and the support member may not overlap with the lower inorganic layer and the upper inorganic layer.

[0031] Details of other embodiments are described in the detailed description and shown in the drawings.

[0032] Advantageous Effects

[0033] According to the embodiments of the present disclosure, a display device with improved display quality and improved reliability can be provided.

[0034] The effects of the present disclosure are not limited to the above effects, and various other effects are included in this specification. Description of the Drawings

[0035] Figure 1It is a schematic plan view of a display device according to an embodiment.

[0036] Figure 2 It is Figure 1 an enlarged plan view of part Q1 of

[0037] Figure 3 It is a plan view showing Figure 2 a modified example of

[0038] Figure 4 It is a cross-sectional view of a display device according to an embodiment taken along line X1-X1' of Figure 2

[0039] Figure 5 It is Figure 4 an enlarged cross-sectional view of part Q5 of

[0040] Figure 6 It is a plan view showing a schematic arrangement of partition wall patterns in a display device according to an embodiment.

[0041] Figure 7 It is a plan view showing a schematic arrangement of wavelength conversion patterns and light transmissive patterns in a display device according to an embodiment.

[0042] Figure 8 It is a plan view showing a schematic arrangement of a first color filter and a second color filter in a display device according to an embodiment.

[0043] Figure 9 It is a plan view showing a schematic arrangement of a third color filter and a color pattern in a display device according to an embodiment.

[0044] Figure 10 It is Figure 1 an enlarged plan view of part Q3 of

[0045] Figure 11 It is a cross-sectional view of a display device taken along line X3-X3' of Figure 10

[0046] Figures 12 to 14 They are views for describing the process of manufacturing the first encapsulation layer shown in Figure 11

[0047] Figures 15 to 17 They are views for describing the process of manufacturing the second encapsulation layer shown in Figure 11

[0048] Figure 18 It is a cross-sectional view showing Figure 11 a modified example of the display device shown in

[0049] ​​​​Figure 19 is a cross-sectional view showing another modified example of the display device shown in Figure 11 .

[0050] Figures 20 to 24 are cross-sectional views each showing other modified examples of the display device shown in Figure 11 .

[0051] Figure 25 is a cross-sectional view of a display device according to another embodiment taken along line X1-X1' of Figure 2 .

[0052] Figure 26 is a cross-sectional view of a display device according to another embodiment taken along line X3-X3' of Figure 10 .

[0053] Figure 27 is a cross-sectional view showing a modified example of the display device shown in Figure 26 .

[0054] Figure 28 is a cross-sectional view showing another modified example of the display device shown in Figure 26 .

[0055] Figures 29 to 33 are cross-sectional views each showing other modified examples of the display device shown in Figure 26 . DETAILED DESCRIPTION

[0056] Advantages and features of the present disclosure and methods for achieving these advantages and features will become apparent from embodiments that will be described in detail later with reference to the drawings. However, the present disclosure is not limited to the embodiments disclosed below and can be implemented in various different forms, which will only be provided to make the present disclosure complete and to allow those of ordinary skill in the art to which the present disclosure pertains to fully recognize the scope of the present disclosure, and the present disclosure will be defined by the scope of the claims.

[0057] The phrase "an element or layer on another element or layer" includes both: a case where one element or layer is directly on another element or layer; and a case where one element or layer is on another element or layer and other elements or layers are interposed therebetween. On the other hand, the phrase "an element or layer directly on another element or layer" means that no other elements or layers are interposed between one element or layer and another element or layer. Throughout the specification, the same components will be denoted by the same reference numerals.

[0058] Spatial relative terms such as "below", "beneath", "lower", "above", "upper", etc. may be used to easily describe the relationship between one element or component and other elements or components shown in the drawings. The spatial relative terms are to be understood to include terms for different orientations of the element in use in addition to the orientation shown in the drawings. For example, when an element shown in the drawings is flipped, an element described as "below or beneath" another element may be placed above the other element. Thus, the term "below" may include both the directions of below and above.

[0059] The terms "first", "second", "third", "fourth", etc. are used to describe various components, but these components are not limited by these terms. These terms are only used to distinguish one component from other components. Thus, within the technical spirit of the present disclosure, the first component to be mentioned below may be any one of the second, third, and fourth components.

[0060] The embodiments described herein will be described with reference to the plan views and cross-sectional views that are ideal schematic views of the present disclosure. Thus, the form of the exemplary drawings may be changed due to manufacturing techniques, tolerances, etc. Therefore, the embodiments of the present disclosure are not limited to the specific forms shown in the drawings, and also include form changes generated according to the manufacturing process. Thus, the regions shown in the drawings have a schematic property, and the shape of the regions shown in the drawings is intended to show a specific form of the region of the element, rather than being intended to limit the scope of the present disclosure.

[0061] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings.

[0062] Figure 1 is a schematic plan view of a display device according to an embodiment, Figure 2 is Figure 1 an enlarged plan view of part Q1 of Figure 3 and is Figure 2 a plan view showing a modification example of

[0063] Referring to Figures 1 to 3 , the display device 1 can be applied to various electronic devices, for example, small and medium-sized electronic devices such as tablet personal computers (PCs), smart phones, vehicle navigation units, cameras, central information displays (CID) installed in vehicles, wristwatch-type electronic devices, personal digital assistants (PDAs), portable multimedia players (PMPs), and game consoles; and medium and large-sized electronic devices such as televisions, external billboards, monitors, personal computers, and laptop computers. These electronic devices are provided only as examples, and without departing from the concept of the present disclosure, the display device 1 can also be adopted in other electronic devices.

[0064] The display device 1 may include a display panel 10. In some embodiments, the display device 1 may further include a flexible printed circuit board FPC and a driving chip IC.

[0065] In a plan view, the display panel 10 may have a rectangular shape. The display panel 10 may include two first sides extending in a first direction X and two second sides extending in a second direction Y intersecting the first direction X. The corners where the first side and the second side of the display device 1 meet may be right angles, but are not limited thereto and may also be curved. In some embodiments, the lengths of the first side and the second side may be different from each other, but the present disclosure is not limited thereto. The shape of the display panel 10 in a plan view is not limited to the shape shown and may also be circular or other shapes.

[0066] Unless otherwise defined, the terms "upper", "upper side", "upper part", "top", and "upper surface" as used herein refer to the direction pointed by the arrow of a third direction Z intersecting the first direction X and the second direction Y as depicted in the drawings, and the terms "lower", "lower side", "lower part", "bottom", and "lower surface" as used herein refer to the direction opposite to the direction pointed by the arrow of the third direction Z as depicted in the drawings.

[0067] The display panel 10 may include a display area DA for displaying an image and a non-display area NDA for not displaying an image.

[0068] A plurality of emission areas and non-emission areas NLA may be defined in the display area DA of the display panel 10. In some embodiments, a first emission area LA1, a second emission area LA2, and a third emission area LA3 may be defined in the display area DA of the display panel 10. The first emission area LA1, the second emission area LA2, and the third emission area LA3 may be areas where the light generated by the light-emitting elements of the display panel 10 is emitted to the outside of the display panel 10, and the non-emission area NLA may be an area where the light is not emitted to the outside of the display panel 10.

[0069] In some embodiments, the light emitted to the outside from the first emission area LA1, the second emission area LA2, and the third emission area LA3 may have different colors. For example, the light emitted to the outside from the first emission area LA1 may be light of a first color, the light emitted from the second emission area LA2 may be light of a second color, the light emitted from the third emission area LA3 may be light of a third color, and the light of the first color, the light of the second color, and the light of the third color may have different colors.

[0070] In some embodiments, the light of the third color may be blue light having a peak wavelength in the range of 440 nm to about 480 nm, and the light of the first color may be red light having a peak wavelength in the range of 610 nm to 650 nm. Additionally, the light of the second color may be green light having a peak wavelength in the range of 530 nm to 570 nm. However, the present disclosure is not limited thereto, and the light of the first color may be green light and the light of the second color may be red light.

[0071] In some embodiments, the first emission region LA1, the second emission region LA2, and the third emission region LA3 may form a group, and a plurality of groups may be defined in the display region DA.

[0072] In some embodiments, elements and circuits for displaying an image, such as pixel circuits (such as switching elements), may be provided in the display region DA of the display panel 10, and self-emitting elements and a pixel defining layer that defines the above-described first emission region LA1, second emission region LA2, third emission region LA3, and non-emission region NLA may be included in the display region DA. In an embodiment, the self-emitting element may include at least one of an organic light emitting diode, a quantum dot light emitting diode, a micro light emitting diode based on an inorganic material (e.g., a micro LED), and a nano light emitting diode based on an inorganic material (e.g., a nano LED). Hereinafter, for ease of explanation, the case where the self-emitting element is an organic light emitting diode will be described by way of example.

[0073] In some embodiments, as Figure 2 shown, the first emission region LA1, the second emission region LA2, and the third emission region LA3 may be sequentially positioned along the first direction X. In some embodiments, in the display region DA, the first emission region LA1, the second emission region LA2, and the third emission region LA3 may form a group, and may be repeatedly arranged along the first direction X and the second direction Y.

[0074] However, the present disclosure is not limited thereto, and the arrangement of the first emission region LA1, the second emission region LA2, and the third emission region LA3 may be changed differently. For example, as Figure 3 shown, the first emission region LA1 and the second emission region LA2 may be adjacent to each other along the first direction X, and the third emission region LA3 may be located on one side of the first emission region LA1 and the second emission region LA2 along the second direction Y.

[0075] Hereinafter, the case where the first emission region LA1, the second emission region LA2, and the third emission region LA3 are arranged as Figure 2 shown will be described as an example.

[0076] In some embodiments, the non-display area NDA of the display panel 10 may be located around the display area DA and may surround the display area DA.

[0077] A dam member and a support member may be provided in the non-display area NDA of the display panel 10.

[0078] The dam member may block the overflow of the organic material (or monomer) during the formation of the encapsulation layer provided in the display area DA, and thus, may prevent the organic material of the encapsulation layer from extending toward the edge of the display panel 10.

[0079] In some embodiments, the dam member may include a first dam member IDM and a second dam member ODM.

[0080] Both the first dam member IDM and the second dam member ODM may be located in the non-display area NDA of the display panel 10, and the first dam member IDM may be positioned relatively closer to the display area DA than the second dam member ODM.

[0081] In some embodiments, the first dam member IDM may be arranged to completely surround the display area DA in a plan view, and the second dam member ODM may be arranged to completely surround the display area DA and the first dam member IDM in a plan view.

[0082] The support member may be used to support the structure of the display panel 10, such as a mask, during the formation of the encapsulation layer.

[0083] In some embodiments, the support member may include a first support member IS and a second support member OS.

[0084] Both the first support member IS and the second support member OS may be located in the non-display area NDA of the display panel 10, and the first support member IS may be positioned relatively closer to the display area DA than the second support member OS.

[0085] In some embodiments, the first support member IS may be located between the first dam member IDM and the second dam member ODM in a plan view and may be arranged to completely surround the display area DA and the first dam member IDM.

[0086] In some embodiments, the second support member OS may be located outside the first support member IS in a plan view and the second dam member ODM may be interposed therebetween, and may be arranged to completely surround the second dam member ODM, the first support member IS, the first dam member IDM, and the display area DA.

[0087] A plurality of connection pads PD may be located in the non-display area NDA of the display panel 10. The connection pads PD may be electrically connected to the pixel circuits located in the display area DA via connection lines or the like.

[0088] In some embodiments, the connection pad PD may be located outside the second support member OS. That is, the connection pad PD may be positioned relatively farther from the display area DA than the second support member OS, and the second support member OS may be located between the connection pad PD and the display area DA.

[0089] The flexible printed circuit board FPC may be connected to the connection pad PD of the display panel 10. The flexible printed circuit board FPC may electrically connect the circuit board that provides signals and power for driving the display device 1 and the display panel 10 to each other.

[0090] The driving chip IC may be electrically connected to a circuit board or the like to receive data, signals, etc. In some embodiments, the driving chip IC may be a data driving chip, and may receive a data control signal, image data, etc. from a circuit board or the like, and generate and output a data voltage corresponding to the image data.

[0091] In some embodiments, the driving chip IC may be mounted on the flexible printed circuit board FPC. For example, the driving chip IC may be mounted on the flexible printed circuit board FPC in the form of a chip on film (COF).

[0092] The data voltage provided by the driving chip IC, the power provided by the circuit board, etc. may be transmitted to the pixel circuit of the display panel 10 via the flexible printed circuit board FPC and the connection pad PD.

[0093] Figure 4 is a cross-sectional view of a display device according to an embodiment taken along the line X1-X1', Figure 2 Figure 5 is Figure 4 an enlarged cross-sectional view of part Q5 of Figure 6 is a plan view showing a schematic arrangement of partition walls in a display device according to an embodiment, Figure 7 is a plan view showing a schematic arrangement of wavelength conversion patterns and light transmissive patterns in a display device according to an embodiment, Figure 8 is a plan view showing a schematic arrangement of a first color filter and a second color filter in a display device according to an embodiment, Figure 9 is a plan view showing a schematic arrangement of a third color filter and a color pattern in a display device according to an embodiment, Figure 10 is Figure 1 an enlarged plan view of part Q3 of Figure 11 is along Figure 10 a cross-sectional view of the display device taken along the line X3-X3'.

[0094] Hereinafter, the stacked structure of the display device 1 will be described with reference to Figures 4 to 11

[0095] ​​The base component 110 may be made of a light-transmissive material. In some embodiments, the base component 110 may be a glass substrate or a plastic substrate. When the base component 110 is a plastic substrate, the base component 110 may be flexible.

[0096] In some embodiments, as described above, a plurality of emission regions LA1, LA2, and LA3 and a non-emission region NLA may be defined in the base component 110.

[0097] A buffer layer 111 may be further located on the base component 110. The buffer layer 111 may be disposed on the base component 110 and may be disposed in the display region DA and the non-display region NDA. The buffer layer 111 may block foreign substances (such as moisture) from infiltrating through the base component 110. For example, the buffer layer 111 may include an inorganic material such as SiO 2 , SiN x or SiON, and may be formed as a single layer or multiple layers.

[0098] A light-blocking pattern BML may be located on the buffer layer 111. The light-blocking pattern BML may block light and may have conductivity. The light-blocking pattern BML may block external light or light from a light-emitting element from being introduced into a semiconductor layer ACT to be described later, and thus, may reduce or minimize leakage current generated by light in a thin-film transistor TL to be described later. In the drawings, the light-blocking pattern BML is illustrated as being located in the display region DA and not in the non-display region NDA, but the light-blocking pattern BML may also be located in the non-display region NDA.

[0099] In some embodiments, the light-blocking pattern BML may be made of a material that blocks light and has conductivity, and may have a single-layer or multi-layer structure. For example, the light-blocking pattern BML may be a stacked structure of titanium (Ti) / copper (Cu) / indium tin oxide (ITO), or a stacked structure of titanium (Ti) / copper (Cu) / aluminum oxide (Al 2 O 3 ), but is not limited thereto.

[0100] In some embodiments, a plurality of light-blocking patterns BML may be provided to correspond to respective semiconductor layers ACT and may overlap with the semiconductor layers ACT. In some embodiments, the width of the light-blocking pattern BML may be greater than the width of the semiconductor layer ACT.

[0101] In some embodiments, the light-blocking pattern BML may be a part of a data line, a power supply line, a line that electrically connects a thin-film transistor (not shown in the figure) and a thin-film transistor TL (shown in the figure) to each other, etc. In some embodiments, the light-blocking pattern BML may be made of a material having a lower resistance than the second conductive layer or the source electrode SE and the drain electrode DE included in the second conductive layer.

[0102] The first insulating layer 113 may be located on the light blocking pattern BML. In some embodiments, the first insulating layer 113 may be located in the display area DA and the non-display area NDA. The first insulating layer 113 may cover the light blocking pattern BML. In some embodiments, the first insulating layer 113 may include an inorganic material such as SiO 2 , SiN x , SiON, Al 2 O 3 , TiO 2 , Ta 2 O, HfO 2 or ZrO 2 .

[0103] The semiconductor layer ACT may be located on the first insulating layer 113. In some embodiments, the semiconductor layer ACT may be arranged to correspond to the first emission region LA1, the second emission region LA2, and the third emission region LA3 in the display area DA, respectively.

[0104] In some embodiments, the semiconductor layer ACT may include an oxide semiconductor. For example, the semiconductor layer ACT may be made of Zn oxide, In-Zn oxide, Ga-In-Zn oxide, etc., which are Zn oxide-based materials; and the semiconductor layer ACT may be an In-Ga-Zn-O (IGZO) semiconductor in which metals such as indium (In) and gallium (Ga) are included in ZnO. However, the present disclosure is not limited thereto, and the semiconductor layer ACT may include amorphous silicon, polycrystalline silicon, etc.

[0105] In some embodiments, the semiconductor layer ACT may be arranged to overlap with the corresponding light blocking pattern BML, and thus, the generation of photocurrent in the semiconductor layer ACT may be suppressed.

[0106] The first conductive layer may be disposed on the semiconductor layer ACT and may include a gate electrode GE and a wiring layer WR. The gate electrode GE may be located in the display area DA and may be arranged to overlap with the semiconductor layer ACT. The wiring layer WR may include some of the lines that electrically connect the connection pad PD and the elements (such as thin film transistors TL, light emitting elements, etc.) located in the display area DA to each other.

[0107] The gate electrode GE and the wiring layer WR may include one or more of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu) in consideration of adhesion to adjacent layers, surface flatness of the layers to be stacked, processability, etc., and may be formed as a single layer or multiple layers.

[0108] In the display area DA, the gate insulating layer 115 may be located between the semiconductor layer ACT and the first conductive layer or between the semiconductor layer ACT and the gate electrode GE. In some embodiments, the gate electrode GE and the gate insulating layer 115 may be used as a mask for masking the channel region of the semiconductor layer ACT, and the widths of the gate electrode GE and the gate insulating layer 115 may be smaller than the width of the semiconductor layer ACT.

[0109] In some embodiments, the gate insulating layer 115 may be patterned to have a shape substantially the same as the shape of the gate electrode GE or the first conductive layer. In some embodiments, the width of the gate insulating layer 115 may be greater than the width of the gate electrode GE or the first conductive layer.

[0110] In some embodiments, the gate insulating layer 115 may include an inorganic material. For example, the gate insulating layer 115 may include the inorganic materials exemplified in the description of the first insulating layer 113.

[0111] In the non-display area NDA, the gate insulating layer 115 may be located between the wiring layer WR and the first insulating layer 113.

[0112] The second insulating layer 117 covering the semiconductor layer ACT and the gate electrode GE may be located on the gate insulating layer 115. The second insulating layer 117 may be located in the display area DA and the non-display area NDA. In some embodiments, the second insulating layer 117 may be used as a planarization layer for providing a flat surface.

[0113] In some embodiments, the second insulating layer 117 may include an organic material. For example, the second insulating layer 117 may include at least one of photoacrylic (PAC), polystyrene, polymethyl methacrylate (PMMA), polyacrylonitrile (PAN), polyamide, polyimide, polyarylether, heterocyclic polymer, parylene, fluorine-based polymer, epoxy resin, benzocyclobutene series resin, silicone series resin, and silane resin, but is not limited thereto.

[0114] The second conductive layer may be located on the second insulating layer 117 and may include a source electrode SE, a drain electrode DE, a power supply line VSL, and a first pad electrode PD1 connecting the pad PD.

[0115] The source electrode SE and the drain electrode DE may be located in the display area DA and may be arranged to be spaced apart from each other.

[0116] Each of the drain electrode DE and the source electrode SE may penetrate through the second insulating layer 117 to connect to the semiconductor layer ACT.

[0117] In some embodiments, the source electrode SE may pass through the first insulating layer 113 and the second insulating layer 117 to be connected to the light blocking pattern BML. When the light blocking pattern BML is part of a line for transmitting signals, voltages, etc., the source electrode SE may be connected to and electrically coupled to the light blocking pattern BML to receive the voltage, etc. provided to the line. Alternatively, when the light blocking pattern BML is a floating pattern rather than a separate line, the voltage provided to the source electrode SE may be transmitted to the light blocking pattern BML.

[0118] The above-described semiconductor layer ACT, gate electrode GE, source electrode SE, and drain electrode DE may form a thin film transistor TL as a switching element. In some embodiments, the thin film transistor TL may be located in the first emission region LA1, the second emission region LA2, and the third emission region LA3, respectively. In some embodiments, a part of the thin film transistor TL may also be located in the non-emission region NLA.

[0119] The power supply line VSL may be located in the non-display region NDA. The driving voltage (e.g., ELVSS voltage) provided to the cathode electrode CE may be provided to the power supply line VSL.

[0120] The first pad electrode PD1 of the connection pad PD may be located in the non-display region NDA. In some embodiments, the first pad electrode PD1 may pass through the second insulating layer 117 to be electrically connected to or electrically coupled to the wiring layer WR.

[0121] The source electrode SE, drain electrode DE, power supply line VSL, and the first pad electrode PD1 of the connection pad PD may include aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a multi-layer or a single layer. In an embodiment, the source electrode SE, drain electrode DE, power supply line VSL, and the first pad electrode PD1 of the connection pad PD may have a multi-layer structure of Ti / Al / Ti.

[0122] The third insulating layer 130 may be located on the second insulating layer 117. The third insulating layer 130 may cover the thin film transistor TL in the display region DA and may expose the portion of the power supply line VSL in the non-display region NDA.

[0123] In some embodiments, the third insulating layer 130 may be a planarization layer. In some embodiments, the third insulating layer 130 may be formed as an organic layer. For example, the third insulating layer 130 may include acrylic resin, epoxy-based resin, imide-based resin, ester-based resin, etc. In some embodiments, the third insulating layer 130 may include a positive photosensitive material or a negative photosensitive material.

[0124] The first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may be located on the third insulating layer 130 in the display area DA. In addition, the second pad electrode PD2 connecting the connection electrode CNE and the connection pad PD may be located on the third insulating layer 130 in the non-display area NDA.

[0125] The first anode electrode AE1 may overlap with the first emission area LA1, and at least a part of the first anode electrode AE1 may extend to the non-emission area NLA. The second anode electrode AE2 may overlap with the second emission area LA2, and at least a part of the second anode electrode AE2 may extend to the non-emission area NLA, and the third anode electrode AE3 may overlap with the third emission area LA3, but at least a part of the third anode electrode AE3 may extend to the non-emission area NLA. The first anode electrode AE1 may pass through the third insulating layer 130 to connect to the drain electrode DE corresponding to the first anode electrode AE1 of the thin film transistor TL, the second anode electrode AE2 may pass through the third insulating layer 130 to connect to the drain electrode DE corresponding to the second anode electrode AE2 of the thin film transistor TL, and the third anode electrode AE3 may pass through the third insulating layer 130 to connect to the drain electrode DE corresponding to the third anode electrode AE3 of the thin film transistor TL. In some embodiments, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may be reflective electrodes. In this case, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may be metal layers including metals (such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, and Cr). In another embodiment, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may further include a metal oxide layer stacked on the metal layer. In an embodiment, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may have a multi-layer structure, for example, a two-layer structure such as indium tin oxide (ITO) / Ag, Ag / ITO, ITO / Mg, or ITO / MgF, or a three-layer structure such as ITO / Ag / ITO.

[0126] The connection electrode CNE may be electrically connected to the power supply line VSL in the non-display area NDA and may be in direct contact with the power supply line VSL.

[0127] The second pad electrode PD2 may be located on the first pad electrode PD1 in the non-display area NDA. The second pad electrode PD2 may be in direct contact with the first pad electrode PD1 and electrically connected to the first pad electrode PD1.

[0128] In some embodiments, the connecting electrode CNE and the second pad electrode PD2 may be made of the same material as the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3, and may be formed together with the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 during the manufacturing process of the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3.

[0129] The pixel defining layer 150 may be located on the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3. The pixel defining layer 150 may include openings exposing the first anode electrode AE1, openings exposing the second anode electrode AE2, and openings exposing the third anode electrode AE3, and may define a first emission region LA1, a second emission region LA2, a third emission region LA3, and a non-emission region NLA. That is, the region of the first anode electrode AE1 that is exposed without being covered by the pixel defining layer 150 may be the first emission region LA1. Similarly, the region of the second anode electrode AE2 that is exposed without being covered by the pixel defining layer 150 may be the second emission region LA2, and the region of the third anode electrode AE3 that is exposed without being covered by the pixel defining layer 150 may be the third emission region LA3. In addition, the region where the pixel defining layer 150 is located may be the non-emission region NLA.

[0130] In some examples, the pixel defining layer 150 may include an organic insulating material, such as polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, or benzocyclobutene (BCB).

[0131] In some embodiments, the pixel defining layer 150 may overlap with the color pattern 250 described later. In addition, the pixel defining layer 150 may also overlap with the first color filter 231 and the second color filter 233.

[0132] The pixel defining layer 150 may also overlap with the bank pattern 310 described later.

[0133] As Figure 4 and Figure 11 shown, the emission layer OL may be located on the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3.

[0134] In some embodiments, the emission layer OL may have a shape of a continuous layer formed across the plurality of emission regions LA1, LA2, and LA3 and the non-emission region NLA. A more detailed description of the emission layer OL will be provided later.

[0135] As Figure 4 and Figure 11As shown, the cathode electrode CE may be located on the emission layer OL. A part of the cathode electrode CE may further be located in the non-display area NDA, as Figure 11 shown. The cathode electrode CE may be electrically connected to and in contact with the connection electrode CNE in the non-display area NDA. The driving voltage (e.g., ELVSS voltage) supplied to the power supply line VSL may be transmitted to the cathode electrode CE via the connection electrode CNE.

[0136] In some embodiments, the cathode electrode CE may have a transmissive-reflective characteristic or a transmissive characteristic. When the cathode electrode CE has a transmissive-reflective characteristic, the cathode electrode CE may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, their compounds or mixtures, such as a mixture of Ag and Mg, or materials having a multilayer structure, such as LiF / Ca or LiF / Al. Further, when the thickness of the cathode electrode CE is several tens to several hundreds of angstroms, the cathode electrode CE may have a semi-transmissive and semi-reflective characteristic.

[0137] When the cathode electrode CE has a transmissive characteristic, the cathode electrode CE may include a transparent conductive oxide (TCO). For example, the cathode electrode CE may include tungsten oxide (W x O x ), titanium oxide (TiO x , for example, TiO 2 ), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), magnesium oxide (MgO), etc.

[0138] The first anode electrode AE1, the emission layer OL, and the cathode electrode CE may form a first light-emitting element ED1, the second anode electrode AE2, the emission layer OL, and the cathode electrode CE may form a second light-emitting element ED2, and the third anode electrode AE3, the emission layer OL, and the cathode electrode CE may form a third light-emitting element ED3. Each of the first light-emitting element ED1, the second light-emitting element ED2, and the third light-emitting element ED3 may emit emission light LE.

[0139] As Figure 5 shown, the emission light LE finally emitted from the emission layer OL may be mixed light in which a first component LE1 and a second component LE2 are mixed with each other. The peak wavelength of each of the first component LE1 and the second component LE2 of the emission light LE may be 440 nm or more and less than 480 nm. That is, the emission light LE may be blue light.

[0140] In some embodiments, the emission layer OL may have a structure in which a plurality of emission layers are arranged to overlap with each other, such as a tandem structure. For example, the emission layer OL may include: a first stack ST1 including a first emission layer EML1, a second stack ST2 located on the first stack ST1 and including a second emission layer EML2, a third stack ST3 located on the second stack ST2 and including a third emission layer EML3, a first charge generation layer CGL1 located between the first stack ST1 and the second stack ST2, and a second charge generation layer CGL2 located between the second stack ST2 and the third stack ST3. The first stack ST1, the second stack ST2, and the third stack ST3 may be arranged to overlap with each other.

[0141] The first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may be arranged to overlap with each other.

[0142] In some embodiments, all of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may emit light of a third color, such as blue light. For example, each of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may be a blue light emission layer and may include an organic material.

[0143] In some embodiments, at least one of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may emit a first blue light having a first peak wavelength, and at least another one of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may emit a second blue light having a second peak wavelength different from the first peak wavelength. For example, any one of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may emit a first blue light having a first peak wavelength, and the others of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may emit a second blue light having a second peak wavelength. That is to say, the emitted light LE finally emitted from the emission layer OL may be a mixed light in which a first component LE1 and a second component LE2 are mixed with each other. The first component LE1 may be a first blue light having a first peak wavelength, and the second component LE2 may be a second blue light having a second peak wavelength.

[0144] In some embodiments, the range of one of the first peak wavelength and the second peak wavelength may be above 440 nm and below 460 nm, and the range of the other of the first peak wavelength and the second peak wavelength may be above 460 nm and below 480 nm. However, the ranges of the first peak wavelength and the second peak wavelength are not limited thereto. For example, both the range of the first peak wavelength and the range of the second peak wavelength may include 460 nm. In some embodiments, any one of the first blue light and the second blue light may be dark blue light, and the other of the first blue light and the second blue light may be sky blue light.

[0145] According to some embodiments, the emitted light LE emitted from the emission layer OL is blue light and includes a long wavelength component and a short wavelength component. Thus, finally, the emission layer OL can emit blue light having a wider emission peak as the emitted light LE. Therefore, compared with a conventional light emitting element that emits blue light having a sharp emission peak, there is an advantage that the color visibility at a side viewing angle can be improved.

[0146] In some embodiments, each of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may include a host and a dopant. The host is not particularly limited as long as it is a commonly used material, but may be, for example, tris(8-hydroxyquinoline)aluminum (Alq3), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), poly(n-vinylcarbazole) (PVK), 9,10-bis(naphthalen-2-yl)anthracene (ADN), 4,4',4”-tris(carbazol-9-yl)-triphenylamine (TCTA), 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBi), 3-tert-butyl-9,10-bis(naphthalen-2-yl)anthracene (TBADN), stilbenyl-arylene (DSA), 4,4'-bis(9-carbazolyl)-2,2'-dimethyl-biphenyl (CDBP), 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN), etc.

[0147] Each of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 that emits blue light may include, for example, a fluorescent material including any one selected from the group consisting of spiro-DPVBi, spiro-6P, stilbenyl-benzene (DSB), stilbenyl-arylene (DSA), a polymer based on polyfluorene (PFO), and a polymer based on poly(p-phenylene vinylene). As another example, each of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may include a phosphorescent material including an organometallic complex such as (4,6-F2ppy)2Irpic.

[0148] As described above, at least one of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 emits blue light with a wavelength band different from that of at least another one of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3. To emit blue light with different wavelength bands, the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may include the same material, and a method of adjusting the resonance distance may be used. Alternatively, to emit blue light with different wavelength bands, at least one of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 and at least another one of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may include different materials.

[0149] However, the present disclosure is not limited thereto, and the blue light emitted from each of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may have a peak wavelength in the range of 440 nm to 480 nm, and the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may be made of the same material.

[0150] Alternatively, in yet another embodiment, at least one of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may emit first blue light having the first peak wavelength described above, another one of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may emit second blue light having a second peak wavelength different from the first peak wavelength, and the remaining one of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may emit third blue light having a third peak wavelength different from the first peak wavelength and the second peak wavelength. In some other embodiments, the range of any one of the first peak wavelength, the second peak wavelength, and the third peak wavelength may be more than 440 nm and less than 460 nm. The range of another one of the first peak wavelength, the second peak wavelength, and the third peak wavelength may be more than 460 nm and less than 470 nm, and the range of the remaining one of the first peak wavelength, the second peak wavelength, and the third peak wavelength may be more than 470 nm and 480 nm or less.

[0151] According to some other embodiments, the emitted light LE emitted from the emission layer OL is blue light and includes a long wavelength component, an intermediate wavelength component, and a short wavelength component. Therefore, finally, the emission layer OL may emit blue light with a wider emission peak as the emitted light LE, and the color visibility at a side viewing angle may be improved.

[0152] According to the above embodiments, compared with a conventional light-emitting element that does not adopt a tandem structure (i.e., a structure in which a plurality of emission layers are stacked), there are advantages of improving the light-emitting efficiency and increasing the lifespan of the display device 1.

[0153] The first charge generation layer CGL1 can be located between the first stack ST1 and the second stack ST2. The first charge generation layer CGL1 can be used to inject charges into each of the emission layers EML1 and EML2. The first charge generation layer CGL1 can be used to adjust the charge balance between the first stack ST1 and the second stack ST2. The first charge generation layer CGL1 can include an n-type charge generation layer CGL11 and a p-type charge generation layer CGL12. The p-type charge generation layer CGL12 can be disposed on the n-type charge generation layer CGL11 and can be located between the n-type charge generation layer CGL11 and the second stack ST2.

[0154] In the first charge generation layer CGL1, the n-type charge generation layer CGL11 and the p-type charge generation layer CGL12 can have a junction structure. The n-type charge generation layer CGL11 is closer to the anode electrodes AE1, AE2 (see Figure 4 ) and AE3 (see Figure 4 ) and the cathode electrode CE among the anode electrodes AE1, AE2 (see Figure 4 ) and AE3 (see Figure 4 ) are arranged. The p-type charge generation layer CGL12 is closer to the cathode electrode CE among the anode electrodes AE1, AE2 (see Figure 4 ) and AE3 (see Figure 4 ) and the cathode electrode CE. The n-type charge generation layer CGL11 provides electrons to the first emission layer EML1 closer to the anode electrodes AE1, AE2 (see Figure 4 ) and AE3 (see Figure 4 ), and the p-type charge generation layer CGL12 provides holes to the second emission layer EML2 included in the second stack ST2. The first charge generation layer CGL1 can be disposed between the first stack ST1 and the second stack ST2 to provide charges to the corresponding emission layers, thereby improving the luminous efficiency and reducing the driving voltage.

[0155] The first stack ST1 can be located on the first anode electrode AE1, the second anode electrode AE2 (see Figure 4 ) and the third anode electrode AE3 (see Figure 4 ), and can further include a first hole transport layer HTL1, a first hole blocking layer BIL1 and a first electron transport layer ETL1.

[0156] The first hole transport layer HTL1 can be located on the first anode electrode AE1, the second anode electrode AE2 (see Figure 4 ) and the third anode electrode AE3 (see Figure 4)On top. The first hole transport layer HTL1 can be used to smoothly transport holes and can include a hole transport material. The hole transport material can include carbazole-based derivatives (e.g., N-phenylcarbazole and polyvinylcarbazole), fluorene-based derivatives, triphenylamine-based derivatives (e.g., N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD), 4,4',4”-tris(N-carbazolyl)triphenylamine (TCTA), N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (NPB), 4,4'-cyclohexylidenebis(TAPC)), etc., but is not limited thereto. In some embodiments, the first hole transport layer HTL1 can be formed as a single layer. Alternatively, in some embodiments, the first hole transport layer HTL1 can be formed as multiple layers. When the first hole transport layer HTL1 is formed as multiple layers, each layer can include different materials.

[0157] The first electron blocking layer BIL1 can be located on the first hole transport layer HTL1 and can be located between the first hole transport layer HTL1 and the first emission layer EML1. The first electron blocking layer BIL1 can include a hole transport material and a metal or metal compound to prevent electrons generated in the first emission layer EML1 from flowing into the first hole transport layer HTL1. In some embodiments, each of the above-mentioned first hole transport layer HTL1 and first electron blocking layer BIL1 can be formed as a single layer in which their respective materials are mixed with each other. However, the present disclosure is not limited thereto. In some other embodiments, the first electron blocking layer BIL1 can be omitted.

[0158] The first electron transport layer ETL1 may be located on the first emission layer EML1 and may be located between the first charge generation layer CGL1 and the first emission layer EML1. In some embodiments, the first electron transport layer ETL1 may include an electron transport material, for example, tris(8-hydroxyquinoline)aluminum (Alq3), 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBi), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole (TAZ), 4-(naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole (NTAZ), 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (tBu-PBD), bis(2-methyl-8-hydroxyquinolinato)-(1,1'-biphenyl-4-olato)aluminum (BAlq), beryllium(benzoquinolinato)(10-olato)(BeBq2), 9,10-bis(naphthalen-2-yl)anthracene (ADN), and mixtures thereof. However, the present disclosure is not limited to the types of the above electron transport materials. In some embodiments, the first electron transport layer ETL1 may be formed as a single layer. Alternatively, in some embodiments, the first electron transport layer ETL1 may be formed as multiple layers. When the first electron transport layer ETL1 is formed as multiple layers, each layer may include different materials. The second stack ST2 may be located on the first charge generation layer CGL1 and may further include a second hole transport layer HTL2, a second electron blocking layer BIL2, and a second electron transport layer ETL2.

[0159] The second hole transport layer HTL2 may be located on the first charge generation layer CGL1. The second hole transport layer HTL2 may be made of the same material as the first hole transport layer HTL1 or may include one or more materials selected from the materials exemplified as the materials included in the first hole transport layer HTL1. The second hole transport layer HTL2 may be formed as a single layer or formed as multiple layers. When the second hole transport layer HTL2 is formed as multiple layers, each layer may include different materials.

[0160] The second electron blocking layer BIL2 may be located on the second hole transport layer HTL2 and may be located between the second hole transport layer HTL2 and the second emission layer EML2. The second electron blocking layer BIL2 may be made of the same material as the first electron blocking layer BIL1 and may have the same structure as the first electron blocking layer BIL1, or may include one or more materials selected from the materials exemplified as the materials included in the first electron blocking layer BIL1. In some other embodiments, the second electron blocking layer BIL2 may be omitted.

[0161] The second electron transport layer ETL2 may be located on the second emission layer EML2 and may be between the second charge generation layer CGL2 and the second emission layer EML2. The second electron transport layer ETL2 may be made of the same material as the first electron transport layer ETL1 and may have the same structure as the first electron transport layer ETL1, or may include one or more materials selected from the materials exemplified as the materials included in the first electron transport layer ETL1. The second electron transport layer ETL2 may be formed as a single layer or formed as multiple layers. When the second electron transport layer ETL2 is formed as multiple layers, each layer may include different materials.

[0162] The second charge generation layer CGL2 may be located on the second stack ST2 and may be between the second stack ST2 and the third stack ST3.

[0163] The second charge generation layer CGL2 may have the same structure as the above-described first charge generation layer CGL1. For example, the second charge generation layer CGL2 may include an n-type charge generation layer CGL21 disposed closer to the second stack ST2 and a p-type charge generation layer CGL22 disposed closer to the cathode electrode CE. The p-type charge generation layer CGL22 may be disposed on the n-type charge generation layer CGL21.

[0164] The second charge generation layer CGL2 may have a structure in which the n-type charge generation layer CGL21 and the p-type charge generation layer CGL22 are in contact with each other. The first charge generation layer CGL1 and the second charge generation layer CGL2 may be made of different materials or the same materials.

[0165] The third stack ST3 may be located on the second charge generation layer CGL2 and may further include a third hole transport layer HTL3 and a third electron transport layer ETL3.

[0166] The third hole transport layer HTL3 may be located on the second charge generation layer CGL2. The third hole transport layer HTL3 may be made of the same material as the first hole transport layer HTL1, or may include one or more materials selected from the materials exemplified as the materials included in the first hole transport layer HTL1. The third hole transport layer HTL3 may be formed as a single layer or formed as multiple layers. When the third hole transport layer HTL3 is formed as multiple layers, each layer may include different materials.

[0167] The third electron transport layer ETL3 can be located on the third emission layer EML3 and can be between the cathode electrode CE and the third emission layer EML3. The third electron transport layer ETL3 can be made of the same material as the first electron transport layer ETL1 and can have the same structure as the first electron transport layer ETL1, or can include one or more materials selected from the materials exemplified as the materials included in the first electron transport layer ETL1. The third electron transport layer ETL3 can be formed as a single layer or formed as multiple layers. When the third electron transport layer ETL3 is formed as multiple layers, each layer can include different materials.

[0168] Although not shown in the drawings, a hole injection layer (HIL) can be further located between the first stack ST1 and the first anode electrode AE1, the second anode electrode AE2 (see Figure 4 ), and the third anode electrode AE3 (see Figure 4 ), between the second stack ST2 and the first charge generation layer CGL1, or between the third stack ST3 and the second charge generation layer CGL2. The hole injection layer can be used to inject holes more smoothly into the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3. In some embodiments, the hole injection layer can be made of one or more selected from the group consisting of: copper phthalocyanine (CuPc), poly(3,4)-ethylenedioxythiophene (PEDOT), polyaniline (PANI), and N,N'-dinaphthyl-N,N'-diphenylbenzidine (NPD), but is not limited thereto. In some embodiments, the hole injection layer can also be located between the first stack ST1 and the first anode electrode AE1, the second anode electrode AE2 (see Figure 4 ), and the third anode electrode AE3 (see Figure 4 ), between the second stack ST2 and the first charge generation layer CGL1, and between the third stack ST3 and the second charge generation layer CGL2.

[0169] Although not shown in the drawings, an electron injection layer (EIL) can be further located between the third electron transport layer ETL3 and the cathode electrode CE, between the second charge generation layer CGL2 and the second stack ST2, or between the first charge generation layer CGL1 and the first stack ST1. The electron injection layer can be used to inject electrons smoothly and can be made of: tris(8-hydroxyquinoline)aluminum (Alq3), PBD, TAZ, spiro-PBD, BAlq, or SAlq, but is not limited thereto. In addition, the electron injection layer can include metal halide compounds, such as one or more selected from the group consisting of: MgF 2 , LiF, NaF, KF, RbF, CsF, FRF, LiI, NaI, KI, RbI, CsI, FRi, and CaF 2, but not limited thereto. In addition, the electron injection layer may include a lanthanum-based material, such as Yb, Sm, or Eu. Alternatively, the electron injection layer may include both a metal halide material and a lanthanum-based material, such as Rb1:Yb or KI:Yb. When the electron injection layer includes both a metal halide material and a lanthanum-based material, the electron injection layer may be formed by co-deposition of the metal halide material and the lanthanum-based material. In some embodiments, the electron injection layer may also be located between the third electron transport layer ETL3 and the cathode electrode CE, between the second charge generation layer CGL2 and the second stack ST2, and between the first charge generation layer CGL1 and the first stack ST1.

[0170] In addition to the above structures, the structure of the emission layer OL may be modified. For example, the emission layer OL may include only two stacks, or may include four or more stacks.

[0171] As Figure 11 shown, the first dam member IDM and the first support member IS may be located on the second insulating layer 117 in the non-display area NDA.

[0172] The first dam member IDM may be relatively located outside the power supply line VSL. In other words, as Figure 11 shown, the power supply line VSL may be located between the first dam member IDM and the display area DA.

[0173] In some embodiments, a part of the first dam member IDM may overlap with the power supply line VSL.

[0174] In some embodiments, the first dam member IDM may include a plurality of dams. For example, the first dam member IDM may include a first dam D1, a second dam D2, and a third dam D3.

[0175] The first dam D1 may partially overlap with the power supply line VSL, and may be spaced apart from the third insulating layer 130 with the power supply line VSL therebetween. In some embodiments, the first dam D1 may include a first lower dam pattern D11 located on the second insulating layer 117 and a first upper dam pattern D12 located on the first lower dam pattern D11.

[0176] The second dam D2 may be located outside the first dam D1 and may be spaced apart from the first dam D1. In some embodiments, the second dam D2 may include a second lower dam pattern D21 located on the second insulating layer 117 and a second upper dam pattern D22 located on the second lower dam pattern D21.

[0177] The third dam D3 may be located outside the second dam D2 and may be spaced apart from the second dam D2. In some embodiments, the third dam D3 may include a third lower dam pattern D31 located on the second insulating layer 117 and a third upper dam pattern D32 located on the third lower dam pattern D31.

[0178] In some embodiments, the first lower dam pattern D11, the second lower dam pattern D21, and the third lower dam pattern D31 may be made of the same material as the third insulating layer 130 and may be formed simultaneously with the third insulating layer 130.

[0179] In some embodiments, the first upper dam pattern D12, the second upper dam pattern D22, and the third upper dam pattern D32 may be made of the same material as the pixel defining layer 150 and may be formed simultaneously with the pixel defining layer 150.

[0180] In some embodiments, the heights of the first dam D1, the second dam D2, and the third dam D3 may be different from each other. For example, the height of the second dam D2 may be greater than the height of the first dam D1, and the height of the third dam D3 may be greater than the height of the second dam D2. That is, as the distance from the display area DA increases, the height of the dams included in the first dam member IDM may gradually increase, and thus, in the process of forming the first organic layer 173 included in the first encapsulation layer 170 to be described later, the organic material can be more effectively blocked from overflowing.

[0181] The first support member IS may be relatively located outside the first dam member IDM. In other words, as shown in Figure 10 and Figure 11 , the first dam member IDM may be located between the first support member IS and the display area DA. The first support member IS may be used to support a mask during the manufacturing process of the first encapsulation layer 170.

[0182] In some embodiments, the first support member IS may be made of the same material as the third insulating layer 130 and may be formed together with the third insulating layer 130 during the manufacturing process of the third insulating layer 130. Alternatively, the first support member IS may be made of the same material as the pixel defining layer 150 and may be formed together with the pixel defining layer 150 during the manufacturing process of the pixel defining layer 150.

[0183] As shown in Figure 4 and Figure 11As shown, the first encapsulation layer 170 may be disposed on the cathode electrode CE. The first encapsulation layer 170 protects components (such as light-emitting elements ED1, ED2, and ED3) located below the first encapsulation layer 170 from external foreign substances (such as moisture). The first encapsulation layer 170 is commonly disposed in the first emission region LA1, the second emission region LA2, the third emission region LA3, and the non-emission region NLA. In some embodiments, the first encapsulation layer 170 may directly cover the cathode electrode CE. In some embodiments, a cover layer (not shown in the figure) covering the cathode electrode CE may be further disposed between the first encapsulation layer 170 and the cathode electrode CE. In this case, the first encapsulation layer 170 may directly cover the cover layer. The first encapsulation layer 170 may be a thin-film encapsulation layer.

[0184] In some embodiments, the first encapsulation layer 170 may include a first lower inorganic layer 171, a first organic layer 173, and a first upper inorganic layer 175 that are sequentially stacked on the cathode electrode CE.

[0185] In some embodiments, the first lower inorganic layer 171 may cover the first light-emitting element ED1, the second light-emitting element ED2, and the third light-emitting element ED3 in the display region DA, and may cover the first dam member IDM in the non-display region NDA.

[0186] In some embodiments, the end 171e of the first lower inorganic layer 171 may be located in the non-display region NDA, and may be located between the first dam member IDM and the first support member IS.

[0187] The first organic layer 173 may be located on the first lower inorganic layer 171. The first organic layer 173 may cover the first light-emitting element ED1, the second light-emitting element ED2, and the third light-emitting element ED3 in the display region DA. In some embodiments, a part of the first organic layer 173 may be located in the non-display region NDA, but may not be located outside the first dam member IDM. In Figure 11 it has been illustrated that a part of the first organic layer 173 is accommodated in the space between the first dam D1 and the second dam D2, but the present disclosure is not limited thereto. Although not shown in the drawings, a part of the first organic layer 173 may also be located between the second dam D2 and the third dam D3.

[0188] The first upper inorganic layer 175 may be located on the first organic layer 173. The first upper inorganic layer 175 may cover the first organic layer 173. In some embodiments, the first upper inorganic layer 175 may be in direct contact with the first lower inorganic layer 171 in the non-display area NDA to form an inorganic-inorganic junction, and an end 175e of the first upper inorganic layer 175 may be located between the first dam member IDM and the first support member IS. In some embodiments, an end 175e of the first upper inorganic layer 175 and an end 171e of the first lower inorganic layer 171 may be substantially aligned with each other.

[0189] In some embodiments, each of the first lower inorganic layer 171 and the first upper inorganic layer 175 may be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiON), lithium fluoride, etc.

[0190] In some embodiments, each of the first lower inorganic layer 171 and the first upper inorganic layer 175 may be formed as a single layer, but is not limited thereto. At least one of the first lower inorganic layer 171 and the first upper inorganic layer 175 may have a structure in which a plurality of layers each made of an inorganic material are stacked, such as a multilayer structure.

[0191] In some embodiments, the first organic layer 173 may be made of an acrylic resin, a methacrylic resin, polyisoprene, an ethylene-based resin, an epoxy-based resin, a urethane-based resin, a cellulose-based resin, a perylene-based resin, etc.

[0192] However, the structure of the first encapsulation layer 170 is not limited to the above examples, and various modifications may be made to the stacked structure of the first encapsulation layer 170.

[0193] The first cover layer 181 may be located on the first encapsulation layer 170. The first cover layer 181 may seal the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light transmissive pattern 330 together with a second cover layer 183 to be described later. In some embodiments, the first cover layer 181 may be provided not only in the display area DA but also in the non-display area NDA, and may cover the first dam member IDM and the first support member IS in the non-display area NDA. In addition, the first cover layer 181 may cover a part of the connection pad PD in the non-display area NDA.

[0194] In some embodiments, the first cover layer 181 may include an inorganic material. For example, the first cover layer 181 may include an inorganic material such as silicon oxide, silicon nitride, or silicon oxynitride.

[0195] The bank pattern 310 may be located on the first cover layer 181. In some embodiments, the bank pattern 310 may be located in the non-emitting area NLA in the display area DA, and may surround the first emission area LA1, the second emission area LA2, and the third emission area LA3 in a plan view, as Figure 6 shown. The bank pattern 310 may separate the spaces in which the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light transmissive pattern 330 are disposed. In addition, the bank pattern 310 may also be located in the non-display area NDA, as Figure 11 shown, and may cover the first dam member IDM in the non-display area NDA. In some embodiments, the first support member IS may also serve as a dam to prevent the bank pattern 310 from overflowing, and a part of the bank pattern 310 may be located in the space between the first dam member IDM and the first support member IS.

[0196] In some embodiments, the bank pattern 310 may be formed as one integrally connected pattern as Figure 6 shown, but is not limited thereto. In another embodiment, the portion of the bank pattern 310 surrounding the first emission area LA1, the portion of the bank pattern 310 surrounding the second emission area LA2, and the portion of the bank pattern 310 surrounding the third emission area LA3 may be formed as separate patterns separated from each other.

[0197] When the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light transmissive pattern 330 are formed by a method of discharging an ink composition (i.e., an inkjet printing method), the bank pattern 310 may serve as a guide for stably positioning the discharged ink composition at a desired position. That is, the bank pattern 310 may serve as a partition wall.

[0198] In some embodiments, the bank pattern 310 may include an organic material having photocurability.

[0199] In some embodiments, the bank pattern 310 may include an organic material having light-blocking properties. When the bank pattern 310 has light-blocking properties, the bank pattern 310 may prevent light from penetrating between adjacent emission areas in the display area DA. For example, the bank pattern 310 may prevent the emission light LE emitted from the second light-emitting element ED2 from entering the first wavelength conversion pattern 340 overlapping with the first emission area LA1. In addition, the bank pattern 310 may block or prevent external light from infiltrating into the components located below the bank pattern 310 in the non-display area NDA.

[0200] The first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light transmissive pattern 330 may be located on the first cover layer 181. In some embodiments, the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light transmissive pattern 330 may be located in the display area DA.

[0201] The light-transmitting pattern 330 may be located on the first cover layer 181, may be located in the space separated by the bank pattern 310, and may overlap with the third emission region LA3 or the third light-emitting element ED3.

[0202] In some embodiments, the light-transmitting pattern 330 may be formed as an island pattern, as Figure 7 shown. In some embodiments, a part of the light-transmitting pattern 330 may overlap with the non-emission region NLA.

[0203] The light-transmitting pattern 330 may transmit incident light. As described above, the emitted light LE provided from the third light-emitting element ED3 may be blue light. The emitted light LE as blue light is transmitted through the light-transmitting pattern 330 and the third color filter 235, and then is emitted to the outside of the display device 1. That is, the third light L3 emitted from the third emission region LA3 to the outside of the display device 1 may be blue light.

[0204] In some embodiments, the light-transmitting pattern 330 may include a first base resin 331, and may further include a first scatterer 333 dispersed in the first base resin 331.

[0205] The first base resin 331 may be made of a material having a high light transmittance. In some embodiments, the first base resin 331 may be made of an organic material. For example, the first base resin 331 may include an organic material, such as an epoxy-based resin, an acrylic resin, a carbon-based resin, or an imide-based resin.

[0206] The first scatterer 333 may have a refractive index different from that of the first base resin 331, and may form an optical interface with the first base resin 331. For example, the first scatterer 333 may be light-scattering particles. The first scatterer 333 is not particularly limited as long as it is a material capable of scattering at least a part of the transmitted light, but may be, for example, metal oxide particles or organic particles. Examples of the metal oxide of the metal oxide particles may include titanium oxide (e.g., TiO 2 ), zirconium oxide (e.g., ZrO 2 ), aluminum oxide (e.g., Al 2 O 3 ), indium oxide (e.g., In 2 O 3 ), zinc oxide (e.g., ZnO), tin oxide (e.g., SnO 2 ), etc., and examples of the material of the organic particles may include acrylic resin, urethane-based resin, etc. Regardless of the incident direction of the incident light, the first scatterer 333 may scatter light in a random direction without substantially converting the wavelength of the light transmitted through the light-transmitting pattern 330.

[0207] In some embodiments, the light-transmitting pattern 330 may be in direct contact with the first cover layer 181 and the bank pattern 310.

[0208] The first wavelength conversion pattern 340 may be located on the first cover layer 181, may be located in a space separated by the bank pattern 310, and may overlap with the first emission region LA1 or the first light-emitting element ED1.

[0209] In some embodiments, the first wavelength conversion pattern 340 may be formed in the form of an island pattern, as Figure 7 shown. In some embodiments, a part of the first wavelength conversion pattern 340 may overlap with the non-emission region NLA.

[0210] The first wavelength conversion pattern 340 may convert or shift the peak wavelength of incident light to light having another specific peak wavelength, and emit light having another specific peak wavelength. In some embodiments, the first wavelength conversion pattern 340 may convert the emitted light LE provided from the first light-emitting element ED1 into red light having a peak wavelength in the range of 610 nm to 650 nm, and emit red light. A more detailed description of the emission spectrum and the light absorption spectrum of the first wavelength conversion pattern 340 will be provided later.

[0211] In some embodiments, the first wavelength conversion pattern 340 may include a second base resin 341 and a first wavelength shifter 345 dispersed in the second base resin 341, and may further include a second scatterer 343 dispersed in the second base resin 341.

[0212] The second base resin 341 may be made of a material having a high light transmittance. In some embodiments, the second base resin 341 may be made of an organic material. In some embodiments, the second base resin 341 may be made of the same material as the first base resin 331, or may include at least one of the materials exemplified as the material of the first base resin 331.

[0213] The first wavelength shifter 345 may convert or shift the peak wavelength of incident light to another specific peak wavelength. In some embodiments, the first wavelength shifter 345 may convert the emitted light LE of a third color (which is blue light provided from the first light-emitting element ED1) into red light having a single peak wavelength in the range of 610 nm to 650 nm and emit red light.

[0214] Examples of the first wavelength shifter 345 may include quantum dots, quantum rods, phosphors, etc. For example, a quantum dot may be particulate matter that emits light of a specific color during the transition of electrons from the conduction band to the valence band.

[0215] Quantum dots can be semiconductor nanocrystal materials. Quantum dots can have a specific bandgap to absorb light according to the composition and size of the quantum dots, and then emit light with a unique wavelength. Examples of the semiconductor nanocrystals of quantum dots can include Group IV nanocrystals, Group II-VI compound nanocrystals, Group III-V compound nanocrystals, Group IV-VI compound nanocrystals, or combinations thereof.

[0216] Group II-VI compounds can be selected from the group consisting of: binary compounds selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; ternary compounds selected from the group consisting of InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and mixtures thereof; and quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof.

[0217] Group III-V compounds can be selected from the group consisting of: binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof.

[0218] The group III-V compounds may be selected from the group consisting of: binary compounds selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. The group IV elements may be selected from the group consisting of Si, Ge, and mixtures thereof. The group IV compounds may be binary compounds selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0219] In this case, the binary, ternary, or quaternary compounds may be present in the particles at a uniform concentration, or may be present in the same particles in a partially different concentration distribution state. In addition, the quantum dots may have a core / shell structure in which one quantum dot surrounds another quantum dot. The interface between the core and the shell may have a concentration gradient in which the concentration of the elements present in the shell decreases towards the center.

[0220] In some embodiments, the quantum dots may have a core-shell structure that includes a core containing the above-described nanocrystals and a shell surrounding the core. The shell of the quantum dots may be used as a passivation layer for maintaining semiconductor properties by preventing chemical modification of the core, and / or as a charge layer for imparting electrophoretic properties to the quantum dots. The shell may be a single layer or multiple layers. The interface between the core and the shell may have a concentration gradient in which the concentration of the elements present in the shell decreases towards the center. Examples of the shell of the quantum dots may include metal or non-metal oxides, semiconductor compounds, combinations thereof, and the like.

[0221] Examples of the metal or non-metal oxides may include: binary compounds such as SiO 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 、Mn 3 O 4 、CuO、FeO、Fe 2 O 3 、Fe 3 O 4 、CoO、Co 3 O 4 or NiO; or ternary compounds such as MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O4 or CoMn 2 O 4 , but the present disclosure is not limited thereto.

[0222] In addition, examples of semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc., but the present disclosure is not limited thereto.

[0223] The light emitted from the first wavelength shifter 345 may have a full width at half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, about 40 nm or less, or about 30 nm or less, and thus, the color purity and color reproducibility of the color displayed by the display device 1 may be further improved. In addition, the light emitted from the first wavelength shifter 345 may be emitted in several directions, regardless of the incident direction of the incident light. Therefore, the lateral visibility of the first color displayed in the first emission region LA1 may be improved.

[0224] A part of the emission light LE provided from the first light emitting element ED1 may pass through the first wavelength conversion pattern 340 without being converted into red light by the first wavelength shifter 345, and then be emitted. The component of the emission light LE that is incident on the first color filter 231 without being converted by the first wavelength conversion pattern 340 may be blocked by the first color filter 231. On the other hand, the red light converted by the first wavelength conversion pattern 340 among the emission light LE passes through the first color filter 231, and then is emitted to the outside. That is, the first light L1 emitted from the first emission region LA1 to the outside may be red light.

[0225] The second scatterer 343 may have a refractive index different from that of the second base resin 341, and may form an optical interface with the second base resin 341. For example, the second scatterer 343 may be light scattering particles. The detailed description of the second scatterer 343 other than the above description is substantially the same as or similar to the description of the first scatterer 333, and thus will be omitted.

[0226] The second wavelength conversion pattern 350 may be located on the first cover layer 181, may be located in the space separated by the bank pattern 310, and may overlap with the second emission region LA2 or the second light emitting element ED2.

[0227] In some embodiments, the second wavelength conversion pattern 350 may be formed in the form of an island pattern, as Figure 7 shown. In some embodiments, a part of the second wavelength conversion pattern 350 may overlap with the non-emission region NLA.

[0228] The second wavelength conversion pattern 350 can convert or shift the peak wavelength of incident light into light having another specific peak wavelength and emit light having another specific peak wavelength. In some embodiments, the second wavelength conversion pattern 350 can convert the emitted light LE provided from the second light-emitting element ED2 into green light in the range of about 510 nm to about 550 nm and emit the green light.

[0229] In some embodiments, the second wavelength conversion pattern 350 can include a third base resin 351 and a second wavelength shifter 355 dispersed in the third base resin 351, and can further include a third scatterer 353 dispersed in the third base resin 351.

[0230] The third base resin 351 can be made of a material having a high light transmittance. In some embodiments, the third base resin 351 can be made of an organic material. In some embodiments, the third base resin 351 can be made of the same material as the first base resin 331, or can include at least one of the materials exemplified as the material of the first base resin 331.

[0231] The second wavelength shifter 355 can convert or shift the peak wavelength of incident light into another specific peak wavelength. In some embodiments, the second wavelength shifter 355 can convert blue light having a peak wavelength in the range of 440 nm to 480 nm into green light having a peak wavelength in the range of 510 nm to 550 nm.

[0232] Examples of the second wavelength shifter 355 can include quantum dots, quantum rods, phosphors, etc. A more detailed description of the second wavelength shifter 355 is substantially the same as or similar to those described above in the description of the first wavelength shifter 345, and thus will be omitted.

[0233] In some embodiments, both the first wavelength shifter 345 and the second wavelength shifter 355 can be composed of quantum dots. In this case, the particle size of the quantum dots constituting the second wavelength shifter 355 can be smaller than the particle size of the quantum dots constituting the first wavelength shifter 345.

[0234] The third scatterer 353 can have a refractive index different from that of the third base resin 351 and can form an optical interface with the third base resin 351. For example, the third scatterer 353 can be light-scattering particles. A detailed description of the third scatterer 353 other than the above description is substantially the same as or similar to the description of the second scatterer 343, and thus will be omitted.

[0235] The emission light LE emitted from the second light-emitting element ED2 can be provided to the second wavelength conversion pattern 350, and the second wavelength shifter 355 can convert the emission light LE provided from the third light-emitting element ED3 into green light having a peak wavelength in the range of about 510 nm to about 550 nm and emit the green light.

[0236] The portion of the emission light LE that is blue light can pass through the second wavelength conversion pattern 350 without being converted into green light by the second wavelength shifter 355 and can be blocked by the second color filter 233. On the other hand, the green light among the emission light LE that is converted by the second wavelength conversion pattern 350 passes through the second color filter 233 and is then emitted to the outside. Therefore, the second light L2 emitted from the second emission region LA2 to the outside of the display device 1 can be green light.

[0237] The second cover layer 183 can be located on the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. The second cover layer 183 can cover the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. The second cover layer 183 can also be located in the non-display area NDA. In the non-display area NDA, the second cover layer 183 can be in contact with the first cover layer 181 and can seal the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. Accordingly, damage or contamination to the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350 due to the penetration of foreign substances such as moisture or air from the outside can be prevented. In some embodiments, the second cover layer 183 can be made of an inorganic material.

[0238] In some embodiments, the second cover layer 183 can be made of the same material as the first cover layer 181 or can include at least one of the materials mentioned in the description of the first cover layer 181. When both the first cover layer 181 and the second cover layer 183 are made of an inorganic material, the portion where the first cover layer 181 and the second cover layer 183 are in direct contact with each other can form an inorganic-inorganic junction and can effectively prevent moisture, air, etc. from being introduced from the outside.

[0239] In some embodiments, the first cover layer 181 and the second cover layer 183 can be in direct contact with each other in the non-display area NDA.

[0240] In some embodiments, the second cover layer 183 can cover a part of the connection pad PD, and an opening OPN exposing a part of the connection pad PD can be defined in the first cover layer 181 and the second cover layer 183. The part of the connection pad PD exposed by the opening OPN can be electrically connected to the terminal of the flexible circuit board FPC described above.

[0241] In some embodiments, during the process of manufacturing a display device, which will be described later, an opening OPN may be formed after forming an outer coating 190. That is, during the process of manufacturing a display device, a connection pad PD may be covered by a first cover layer 181 and a second cover layer 183, and portions of the first cover layer 181 and the second cover layer 183 covering the connection pad PD may be partially removed after forming the outer coating 190. That is, during the process of manufacturing a display device, the connection pad PD may be protected by the first cover layer 181 and the second cover layer 183, and thus, damage to the connection pad PD that may occur during the process of manufacturing a display device can be prevented.

[0242] The outer coating 190 may be located on the second cover layer 183. The outer coating 190 may flatten the upper portions of the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350.

[0243] In some embodiments, the outer coating 190 may include an organic material, which may be an organic material having photocurability.

[0244] In some embodiments, the refractive index of the outer coating 190 may be lower than the refractive indices of the first wavelength conversion pattern 340 and the second wavelength conversion pattern 350. For example, the refractive index of the outer coating 190 may be 1.1 or more and 1.3 or less, and the refractive indices of the first wavelength conversion pattern 340 and the second wavelength conversion pattern 350 may be 0.3 or more greater than the refractive index of the outer coating 190. For example, the refractive indices of the first wavelength conversion pattern 340 and the second wavelength conversion pattern 350 may be 1.7 to 1.9.

[0245] In some embodiments, the refractive index of the outer coating 190 may be lower than the refractive index of the light-transmitting pattern 330. In some embodiments, the refractive index of the light-transmitting pattern 330 may be 0.3 or more greater than the refractive index of the outer coating 190.

[0246] The outer coating 190 having a relatively low refractive index may reflect a part of the light emitted from the first wavelength conversion pattern 340 and the second wavelength conversion pattern 350 in the direction toward the upper side of the display device 1. That is, the outer coating 190 may recycle at least a part of the light that transmits through the first wavelength conversion pattern 340 and the second wavelength conversion pattern 350 and then is incident thereon to increase the amount of light converted by the first wavelength conversion pattern 340 and the second wavelength conversion pattern 350, and as a result, the light efficiency of the display device 1 can be improved.

[0247] In some embodiments, the outer coating 190 may be located only in the display area DA and may not be located in the non-display area NDA. However, the present disclosure is not limited thereto, and in another embodiment, a part of the outer coating 190 may also be located in the non-display area NDA.

[0248] The first color filter 231, the second color filter 233, the third color filter 235, and the color pattern 250 may be located on the outer coating 190 in the display area DA.

[0249] The first color filter 231 may be arranged to overlap with the first emission area LA1, the second color filter 233 may be arranged to overlap with the second emission area LA2, and the third color filter 235 may be arranged to overlap with the third emission area LA3.

[0250] In some embodiments, the first color filter 231 may block or absorb light of a third color (e.g., blue light). That is, the first color filter 231 may be used as a blue light blocking filter for blocking blue light. In some embodiments, the first color filter 231 may selectively transmit light of a first color (e.g., red light) and block or absorb light of a third color (e.g., blue light) and light of a second color (e.g., green light). For example, the first color filter 231 may be a red color filter and may include a red colorant.

[0251] The second color filter 233 may block or absorb light of a third color (e.g., blue light). That is, the second color filter 233 may also be used as a blue light blocking filter. In some embodiments, the second color filter 233 may selectively transmit light of a second color (e.g., green light) and block or absorb light of a third color (e.g., blue light) and light of a first color (e.g., red light). For example, the second color filter 233 may be a green color filter and may include a green colorant.

[0252] As Figure 4 and Figure 8 shown, in some embodiments, a part of the first color filter 231 may be further located in the non-emission area NLA, and a part of the second color filter 233 may also be further located in the non-emission area NLA.

[0253] In some embodiments, a part of the first color filter 231 may be further located in the non-emission area NLA in the area between the first emission area LA1 and the second emission area LA2 and in the area between the first emission area LA1 and the third emission area LA3.

[0254] In some embodiments, a portion of the second color filter 233 may further be in a region between the first emission region LA1 and the second emission region LA2 and in a region between the second emission region LA2 and the third emission region LA3 in the non-emission region NLA.

[0255] As shown in the drawings, the first color filter 231 and the second color filter 233 do not overlap with each other, but the first color filter 231 and the second color filter 233 may also overlap with each other in a region between the first emission region LA1 and the second emission region LA2 in the non-emission region NLA. A portion where the first color filter 231 and the second color filter 233 overlap with each other in the non-emission region NLA may be used as a light-blocking member that blocks the transmission of light.

[0256] Alternatively, in another embodiment, different from that shown in the drawings, the first color filter 231 and the second color filter 233 may be located above the entire non-emission region NLA, and in the embodiment, the first color filter 231 and the second color filter 233 may overlap with each other in the entire non-emission region NLA.

[0257] The third color filter 235 may selectively transmit light of a third color (e.g., blue light), and block or absorb light of a first color (e.g., red light) and light of a second color (e.g., green light). In some embodiments, the third color filter 235 may be a blue color filter, and may include a blue colorant, such as a blue dye or a blue pigment.

[0258] The color pattern 250 may be disposed to overlap with the non-emission region NLA in the display region DA. The color pattern 250 may also be located in the non-display region NDA, and may be disposed to overlap with the bank pattern 310 in the non-display region NDA.

[0259] The color pattern 250 may absorb a portion of the light from the outside of the display device 1 into the display device 1 to reduce the reflected light caused by the external light. The external light is largely reflected to cause a distortion of the color gamut of the display device 1. However, according to the present embodiment, when the color pattern 250 is located in the non-emission region NLA and the non-display region NDA, the color distortion caused by the external light reflection may be reduced.

[0260] In some embodiments, the color pattern 250 may include a blue colorant, such as a blue dye or a blue pigment. In some embodiments, the color pattern 250 may be made of the same material as the third color filter 235 and may be formed simultaneously with the third color filter 235 during the formation of the third color filter 235. When the color pattern 250 includes a blue colorant, the external light or the reflected light transmitted through the color pattern 250 has a blue wavelength band. The color sensitivity of a user's eyes varies according to the color of the light. More specifically, compared with the light in the green wavelength band and the light in the red wavelength band, the user may perceive the light in the blue wavelength band less sensitively. Therefore, the color pattern 250 includes a blue colorant, and thus, the user may perceive the reflected light relatively less sensitively.

[0261] In some embodiments, the color pattern 250 may overlap with the first color filter 231 and the second color filter 233 in the non-emission area NLA. For example, the color pattern 250 may overlap with the first color filter 231 and the second color filter 233 in the area between the first emission area LA1 and the second emission area LA2 in the non-emission area NLA. In addition, the color pattern 250 may overlap with the second color filter 233 in the area between the second emission area LA2 and the third emission area LA3 in the non-emission area NLA. In addition, the color pattern 250 may overlap with the first color filter 231 in the area between the third emission area LA3 and the first emission area LA1 in the non-emission area NLA.

[0262] The portions where the first color filter 231 and the color pattern 250 overlap with each other and the portions where the second color filter 233 and the color pattern 250 overlap with each other in the non-emission area NLA may be used as light-blocking members that block the transmission of light. The portions where the first color filter 231 and the color pattern 250 overlap with each other and the portions where the second color filter 233 and the color pattern 250 overlap with each other in the non-emission area NLA may reduce color distortion caused by external light reflection by absorbing at least a part of the external light. In addition, these portions may prevent the light emitted to the outside from penetrating between adjacent emission areas and causing color mixing, and thus may further improve the color gamut of the display device 1.

[0263] In some embodiments, in the non-emission area NLA, the color pattern 250 may be located on the first color filter 231 and the second color filter 233. That is, compared with the first color filter 231 and the second color filter 233, the color pattern 250 may be positioned relatively farther from the base member 110.

[0264] The second dam member ODM may be located between the first cover layer 181 and the second cover layer 183 in the non-display area NDA.

[0265] The second dam member ODM can prevent the organic material from overflowing during the formation of the second organic layer 273 included in the second encapsulation layer 270.

[0266] The second dam member ODM can be relatively located outside the first dam member IDM. In other words, as Figure 10 and Figure 11 shown, the first dam member IDM can be located between the second dam member ODM and the display area DA.

[0267] In some embodiments, the second dam member ODM can be made of the same material as the bank pattern 310 and can be formed simultaneously with the bank pattern 310 during the formation of the bank pattern 310.

[0268] The second support member OS can be located on the second cover layer 183 in the non-display area NDA. The second support member OS can support the mask used during the formation of the second encapsulation layer 270.

[0269] In some embodiments, the second support member OS can be relatively located outside the second dam member ODM. In other words, as Figure 10 and Figure 11 shown, the second dam member ODM can be located between the second support member OS and the display area DA.

[0270] In some embodiments, the second support member OS can be made of the same material as the outer coating 190 and can be formed together with the outer coating 190 during the formation of the outer coating 190. Alternatively, the second support member OS can include the same material as at least one of the first color filter 231, the second color filter 233, and the third color filter 235. For example, when the second support member OS includes the same material as the third color filter 235, the second support member OS can be formed together with the third color filter 235 during the formation of the third color filter 235.

[0271] The second encapsulation layer 270 can be located on the first color filter 231, the second color filter 233, the third color filter 235, and the color pattern 250. The second encapsulation layer 270 protects the components located below the second encapsulation layer 270 from external foreign substances (such as moisture).

[0272] The second encapsulation layer 270 is commonly disposed in the display area DA in the first emission area LA1, the second emission area LA2, the third emission area LA3, and the non-emission area NLA. In some embodiments, the second encapsulation layer 270 can directly cover the first color filter 231, the second color filter 233, the third color filter 235, and the color pattern 250 in the display area DA.

[0273] The second encapsulation layer 270 may cover the bank pattern 310 and the color pattern 250 in the non-display area NDA.

[0274] In some embodiments, the second encapsulation layer 270 may include a second lower inorganic layer 271, a second organic layer 273, and a second upper inorganic layer 275 stacked in sequence.

[0275] In some embodiments, the second lower inorganic layer 271 may directly cover the first color filter 231, the second color filter 233, the third color filter 235, and the color pattern 250 in the display area DA, and may cover the bank pattern 310 and the color pattern 250 in the non-display area NDA.

[0276] In some embodiments, the end 271e of the second lower inorganic layer 271 may be located in the non-display area NDA and may be located between the second dam member ODM and the second support member OS.

[0277] The second organic layer 273 may be located on the second lower inorganic layer 271. The second organic layer 273 may be located above the entire display area DA, and a part of the second organic layer 273 may be located in the non-display area NDA. In some embodiments, a part of the second organic layer 273 may be located in the non-display area NDA, but may not be located outside the second dam member ODM. In some embodiments, a part of the second organic layer 273 may be located in the space between the second dam member ODM and the first support member IS.

[0278] The second upper inorganic layer 275 may be located on the second organic layer 273. The second upper inorganic layer 275 may cover the second organic layer 273. In some embodiments, the second upper inorganic layer 275 may be in direct contact with the second lower inorganic layer 271 in the non-display area NDA to form an inorganic-inorganic junction, and the end 275e of the second upper inorganic layer 275 may be located between the second dam member ODM and the second support member OS. Both the end 275e of the second upper inorganic layer 275 and the end 271e of the second lower inorganic layer 271 may be located between the second dam member ODM and the second support member OS, and thus, both the second upper inorganic layer 275 and the second lower inorganic layer 271 may not overlap with the connection pad PD.

[0279] In some embodiments, the end 275e of the second upper inorganic layer 275 and the end 271e of the second lower inorganic layer 271 may be substantially aligned with each other.

[0280] In some embodiments, the second lower inorganic layer 271 and the second upper inorganic layer 275 may be made of an inorganic insulating material. In some embodiments, the second lower inorganic layer 271 and the second upper inorganic layer 275 may be made of the same material as the first lower inorganic layer 171, or may include at least one of the materials exemplified as the material of the first lower inorganic layer 171.

[0281] The second organic layer 273 may be located between the second lower inorganic layer 271 and the second upper inorganic layer 275. The second organic layer 273 may be made of an organic insulating material. In some embodiments, the second organic layer 273 may be made of the same material as the first organic layer 173, or may include at least one of the materials exemplified as the material of the first organic layer 173.

[0282] Figures 12 to 14 are views for describing the process of manufacturing Figure 11 the first encapsulation layer shown in

[0283] Except for Figure 11 , referring to Figures 12 to 14 , first, as shown in Figure 12 , after forming the cathode electrode CE, a first mask MSK1 is disposed on the base member 110. The first mask MSK1 may be supported by a first support member IS and may include an opening region OP1 corresponding to the region where the first encapsulation layer 170 (see Figure 11 ) will be formed later. In some embodiments, in the first mask MSK1, one opening region OP1 may overlap the entire display region DA and a part of the non-display region NDA. For example, the first mask MSK1 may be an opening mask.

[0284] Thereafter, when the first inorganic material mat1 for forming the first lower inorganic layer 171 is deposited on the base member 110, the first lower inorganic layer 171 may be formed. In regions other than the opening region OP1, the first inorganic material mat1 is masked by the first mask MSK1 and thus does not reach the base member 110. Accordingly, the end 171e of the first lower inorganic layer 171 is located between the first support member IS and the first dam member IDM.

[0285] After that, as shown in Figure 13 , an organic material is applied to the first lower inorganic layer 171 by an inkjet method or the like and is photocured to form the first organic layer 173. During the process of forming the first organic layer 173, the organic material in the state before curing has fluidity. The movement of the organic material having fluidity may be blocked by the first dam member IDM, and thus, the overflow of the organic material can be prevented.

[0286] Meanwhile, in Figure 13 it has been shown that the first mask MSK1 is not provided, but this is merely an example. The first organic layer 173 may also be formed in a state where the first mask MSK1 shown in Figure 12 is provided on the first support member IS.

[0287] After that, as shown in Figure 14 , when the first mask MSK1 is provided on the first support member IS and the second inorganic material mat2 for forming the first upper inorganic layer 175 is deposited on the first organic layer 173, the first upper inorganic layer 175 can be formed.

[0288] In a region other than the opening region OP1, the second inorganic material mat2 is masked by the first mask MSK1 and thus does not reach the base member 110. Therefore, the end 175e of the first upper inorganic layer 175 is located between the first support member IS and the first dam member IDM. In addition, the first lower inorganic layer 171 and the first upper inorganic layer 175 can be formed using the same first mask MSK1, and thus, the end 171e of the first lower inorganic layer 171 and the end 175e of the first upper inorganic layer 175 can be substantially aligned with each other.

[0289] Figures 15 to 17 are views for describing the process of manufacturing the second encapsulation layer shown in Figure 11 .

[0290] In addition to Figure 11 , also referring to Figures 15 to 17 , first, after forming the first color filter 231, the second color filter 233, the third color filter 235, and the color pattern 250, a second mask MSK2 is provided on the base member 110, as shown in Figure 15 . The second mask MSK2 can be supported by a second support member OS and can include an opening region OP2 that corresponds to a region where the second encapsulation layer 270 (see Figure 11 ) will be formed later.

[0291] In some embodiments, the opening region OP2 of the second mask MSK2 can be wider than the opening region OP1 of the first mask MSK1.

[0292] In some embodiments, in the second mask MSK2, one opening region OP2 can overlap with the entire display region DA and a part of the non-display region NDA. For example, the second mask MSK2 can be an opening mask.

[0293] Thereafter, when a third inorganic material mata1 for forming the second lower inorganic layer 271 is deposited on the base member 110, the second lower inorganic layer 271 can be formed. In a region other than the opening region OP2, the third inorganic material mata1 is masked by the second mask MSK2 and thus does not reach the base member 110. Accordingly, an end portion 271e of the second lower inorganic layer 271 is located between the second support member OS and the second dam member ODM.

[0294] Thereafter, as Figure 16 shown, an organic material is applied to the second lower inorganic layer 271 by an inkjet method or the like and is photocured to form the second organic layer 273. The movement of the organic material in a state before being cured for forming the second organic layer 273 can be blocked by the second dam member ODM, and thus the overflow of the organic material can be prevented.

[0295] Meanwhile, in Figure 16 it has been shown that the second mask MSK2 is not provided, but this is merely an example. The second organic layer 273 can also be formed in a state where the second mask MSK2 shown in Figure 15 is provided on the second support member OS.

[0296] Thereafter, as Figure 17 shown, when the second mask MSK2 is provided on the second support member OS and a fourth inorganic material mata2 for forming the second upper inorganic layer 275 is deposited on the second organic layer 273, the second upper inorganic layer 275 can be formed.

[0297] A part of the fourth inorganic material mata2 is masked by the second mask MSK2 during the deposition process and thus does not reach the base member 110. Accordingly, an end portion 275e of the second upper inorganic layer 275 is located between the second support member OS and the second dam member ODM. In addition, the second lower inorganic layer 271 and the second upper inorganic layer 275 can be formed using the same second mask MSK2, and thus, the end portion 271e of the second lower inorganic layer 271 and the end portion 275e of the second upper inorganic layer 275 can be substantially aligned with each other.

[0298] In the display device 1 according to the above-described embodiment, the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, the light transmissive pattern 330, the first color filter 231, the second color filter 233, and the third color filter 235 are sequentially located on the first encapsulation layer 170, and thus misalignment between components can be prevented. In addition, the display device 1 does not include a separate substrate, and thus, the thickness of the display device 1 can be reduced. In addition, the distance between the light emitting element and the wavelength conversion pattern can be reduced, and thus the light efficiency can be increased.

[0299] In addition, in the display device 1, the first dam member IDM, the second dam member ODM, the first support member IS, and the second support member OS can be formed during the process of manufacturing the components located in the display area DA, and thus, the corresponding components can be formed without adding a separate process.

[0300] Figure 18 is a cross-sectional view showing Figure 11 a modified example of the display device shown in

[0301] Reference Figure 18 , the display device 1a according to the present embodiment is different from the display device 1 according to the embodiment shown in Figures 4 to 11 in that it includes a second support member Osa, and is substantially the same or similar to the display device 1 according to the embodiment shown in Figures 4 to 11 in other configurations. Therefore, the description of the overlapping content will be omitted, and the content different from the above will be mainly described.

[0302] The second support member Osa may include a lower support member Osa1 located on the second cover layer 183 and an upper support member Osa2 located on the lower support member Osa1.

[0303] In some embodiments, the lower support member Osa1 may be made of the same material as the outer coating 190 and may be formed together with the outer coating 190 during the process of forming the outer coating 190. In addition, the upper support member Osa2 may be made of the same material as any one of the first color filter 231, the second color filter 233, and the third color filter 235, and may be formed together with any one of the first color filter 231, the second color filter 233, and the third color filter 235 during the process of manufacturing any one of the first color filter 231, the second color filter 233, and the third color filter 235.

[0304] Alternatively, the lower support member OSa1 may be made of the same material as any one of the first color filter 231, the second color filter 233, and the third color filter 235, and may be formed together with any one of the first color filter 231, the second color filter 233, and the third color filter 235 during the manufacturing process of any one of the first color filter 231, the second color filter 233, and the third color filter 235. In addition, the upper support member OSa2 may be made of the same material as another one of the first color filter 231, the second color filter 233, and the third color filter 235, and may be formed together with another one of the first color filter 231, the second color filter 233, and the third color filter 235 during the manufacturing process of another one of the first color filter 231, the second color filter 233, and the third color filter 235. For example, when the color filters are formed in the order of the first color filter 231, the second color filter 233, and the third color filter 235, the lower support member OSa1 may be made of the same material as the first color filter 231 and may be formed simultaneously with the first color filter 231 during the manufacturing process of the first color filter 231. In addition, the upper support member OSa2 may be made of the same material as the third color filter 235 and may be formed together with the third color filter 235 during the manufacturing process of the third color filter 235.

[0305] Figure 19 is a cross-sectional view showing Figure 11 another modified example of the display device shown in

[0306] Reference Figure 18 , the display device 1b according to the present embodiment is different from the display device 1 according to the embodiment shown in Figures 4 to 11 in that it includes a second support member OSb and is otherwise substantially the same as or similar to the display device 1 according to the embodiment shown in Figures 4 to 11 . Therefore, the description of overlapping content will be omitted, and the content different from the above will be mainly described.

[0307] The second support member OSb may be located between the first cover layer 181 and the second cover layer 183. In some embodiments, the second support member OSb may be made of the same material as the bank pattern 310 and may be formed together with the bank pattern 310 during the formation of the bank pattern 310, similar to the second dam member ODM.

[0308] Figure 20 is a cross-sectional view showing Figure 11 yet another modified example of the display device shown in

[0309] Reference Figure 20 , the display device 1c according to the present embodiment is different from the display device 1 according to the embodiment shown in Figures 4 to 11The display device 1 of the embodiment shown is different in that it includes a second support member OSc and is otherwise substantially the same as or similar to the display device 1 of the embodiment shown according to Figures 4 to 11 Therefore, the description of overlapping content will be omitted, and the content different from the above will be mainly described.

[0310] The second support member OSc may include a lower support member OSc1 located between the first cover layer 181 and the second cover layer 183 and an upper support member OSc2 located on the second cover layer 183 and overlapping the lower support member OSc1.

[0311] In some embodiments, the lower support member OSc1 may be made of the same material as the bank pattern 310 and may be formed together with the bank pattern 310 during the formation of the bank pattern 310, similar to the second dam member ODM.

[0312] The upper support member OSc2 may include the same material as at least one of the outer coating 190, the first color filter 231, the second color filter 233, and the third color filter 235 and may be formed together with at least one of the outer coating 190, the first color filter 231, the second color filter 233, and the third color filter 235 in the same manufacturing process.

[0313] Figure 21 is a cross-sectional view showing Figure 11 yet another modified example of the display device shown in

[0314] Referring to Figure 21 , the display device 1d according to the present embodiment is different from the display device 1 of the embodiment shown according to Figures 4 to 11 in that it includes a second dam member ODMa and is otherwise substantially the same as or similar to the display device 1 of the embodiment shown according to Figures 4 to 11 Therefore, the description of overlapping content will be omitted, and the content different from the above will be mainly described.

[0315] The second dam member ODMa may include a lower dam pattern ODMa1 located on the first cover layer 181 and an upper dam pattern ODMa2 located on the lower dam pattern ODMa1. In some embodiments, the upper dam pattern ODMa2 may be indirectly or directly above the lower dam pattern ODMa1.

[0316] In some embodiments, the lower dam pattern ODMa1 may be made of the same material as the bank pattern 310 and may be formed simultaneously with the bank pattern 310 in the same process as the bank pattern 310.

[0317] In some embodiments, the upper dam pattern ODMa2 may include the same material as at least one of the outer coating 190, the first color filter 231, the second color filter 233, and the third color filter 235, and may be formed together with at least one of the outer coating 190, the first color filter 231, the second color filter 233, and the third color filter 235 in the same manufacturing process.

[0318] Figure 22 is a cross-sectional view showing Figure 11 yet another modified example of the display device shown in.

[0319] Referring to Figure 22 , the display device 1e according to the present embodiment is different from the display device 1 according to the embodiment shown in Figures 4 to 11 in that it includes a second support member OSa and a second dam member ODMa, and is substantially the same or similar to the display device 1 according to the embodiment shown in Figures 4 to 11 in other configurations. A more detailed description of the second support member OSa is the same as those described above in Figure 18 the description, and a more detailed description of the second dam member ODMa is the same as those described above in Figure 21 the description, and will thus be omitted.

[0320] Figure 23 is a cross-sectional view showing Figure 11 yet another modified example of the display device shown in.

[0321] Referring to Figure 23 , the display device 1f according to the present embodiment is different from the display device 1 according to the embodiment shown in Figures 4 to 11 in that it includes a second support member OSb and a second dam member ODMa, and is substantially the same or similar to the display device 1 according to the embodiment shown in Figures 4 to 11 in other configurations. A more detailed description of the second support member OSb is the same as those described above in Figure 19 the description, and a more detailed description of the second dam member ODMa is the same as those described above in Figure 21 the description, and will thus be omitted.

[0322] Figure 24 is a cross-sectional view showing Figure 11 yet another modified example of the display device shown in.

[0323] Referring to Figure 24 , the display device 1g according to the present embodiment is different from the display device 1 according to Figures 4 to 11The display device 1 of the embodiment shown is different in that it includes a second support member OSc and a second dam member ODMa, and is substantially the same or similar to the display device 1 of the embodiment shown in Figures 4 to 11 in other configurations. A more detailed description of the second support member OSc is the same as those described above in Figure 20 's description, and a more detailed description of the second dam member ODMa is the same as those described above in Figure 21 's description, and will thus be omitted.

[0324] Figure 25 is a cross-sectional view of a display device according to another embodiment taken along the line Figure 2 X1-X1', and Figure 26 is a cross-sectional view of a display device according to another embodiment taken along the line Figure 10 X3-X3'.

[0325] Referring to Figure 25 and Figure 26 , the display device 2 according to the present embodiment is different from the display device 1 of the embodiment shown in Figures 4 to 11 in that the first cover layer 181 (see Figure 4 and Figure 11 ) is omitted, and the display device 2 includes a first encapsulation layer 170a, and is substantially the same or similar to the display device 1 of the embodiment shown in Figures 4 to 11 in other configurations. Therefore, the description of overlapping content will be omitted.

[0326] The first encapsulation layer 170a includes a first lower inorganic layer 171, a first organic layer 173 located on the first lower inorganic layer 171, and a first upper inorganic layer 175a located on the first organic layer 173.

[0327] The description of the first lower inorganic layer 171 and the first organic layer 173 is the same as those described above in Figures 4 to 11 's description.

[0328] The first upper inorganic layer 175a can be located above the display area DA and the non-display area NDA, can cover not only the first dam member IDM but also the first support member IS, and can also cover a part of the connection pad PD.

[0329] In some embodiments, the first upper inorganic layer 175a may be located above the entire surface of the base member 110. Accordingly, the end 175ae of the first upper inorganic layer 175a may be located at the edge side of the base member 110 and may be relatively located outside the second support member OS. In other words, the second support member OS may be located between the end 175ae of the first upper inorganic layer 175a and the display area DA.

[0330] The end 171e of the first lower inorganic layer 171 is located between the first support member IS and the first dam member IDM, and the end 175ae of the first upper inorganic layer 175a is located outside the second support member OS, and thus, the end 171e of the first lower inorganic layer 171 and the end 175ae of the first upper inorganic layer 175a may not be aligned with each other.

[0331] All of the first wavelength conversion patterns 340, the second wavelength conversion patterns 350, the light transmissive patterns 330, the bank patterns 310, and the second dam member ODM may be located between the first upper inorganic layer 175a and the second cover layer 183.

[0332] The first upper inorganic layer 175a may be in direct contact with the second cover layer 183 in the non-display area NDA to form an inorganic-inorganic junction, and thus may seal the first wavelength conversion patterns 340, the second wavelength conversion patterns 350, and the light transmissive patterns 330.

[0333] In some embodiments, an opening OPN exposing the connection pad PD may be defined in the first upper inorganic layer 175a and the second cover layer 183.

[0334] Figure 27 is a cross-sectional view showing Figure 26 a modified example of the display device shown in.

[0335] Reference Figure 27 , the display device 2a according to the present embodiment is different from the display device 2 according to the embodiment of Figure 26 in that it includes a second support member OSa and is substantially the same or similar to the display device 2 according to the embodiment of Figure 26 in other configurations. A more detailed description of the second support member OSa is the same as those described above in the embodiment of Figure 18 and will thus be omitted.

[0336] Figure 28 is a cross-sectional view showing Figure 26 another modified example of the display device shown in.

[0337] Reference Figure 28 , the display device 2b according to the present embodiment is different from the display device 2 according to Figure 26The display device 2 of the embodiment is different in that it includes a second support member OSb and is otherwise substantially the same as or similar to the display device 2 according to Figure 26 The embodiment. A more detailed description of the second support member OSb is the same as or similar to those described above in Figure 19 The embodiment and will thus be omitted.

[0338] Figure 29 is a cross-sectional view showing a modified example of the display device shown in Figure 26 .

[0339] Referring to Figure 29 , the display device 2c according to the present embodiment is different from the display device 2 according to Figure 26 The embodiment in that it includes a second support member OSc and is otherwise substantially the same as or similar to the display device 2 according to Figure 26 The embodiment. A more detailed description of the second support member OSc is the same as or similar to those described above in Figure 20 The embodiment and will thus be omitted.

[0340] Figure 30 is a cross-sectional view showing another modified example of the display device shown in Figure 26 .

[0341] Referring to Figure 30 , the display device 2d according to the present embodiment is different from the display device 2 according to Figure 26 The embodiment in that it includes a second dam member ODMa and is otherwise substantially the same as or similar to the display device 2 according to Figure 26 The embodiment. A more detailed description of the second dam member ODMa is the same as or similar to those described above in Figure 21 The embodiment and will thus be omitted.

[0342] Figure 31 is a cross-sectional view showing another modified example of the display device shown in Figure 26 .

[0343] Referring to Figure 31 , the display device 2e according to the present embodiment is different from the display device 2 according to Figure 26 The embodiment in that it includes a second dam member ODMa and a second support member OSa and is otherwise substantially the same as or similar to the display device 2 according to Figure 26 The embodiment. A more detailed description of the second dam member ODMa is the same as or similar to those described above in Figure 21Those described in the embodiments are the same as or similar to those, and a more detailed description of the second support member OSa is the same as or similar to those described above in Figure 18 The embodiments are the same as or similar to those, and thus will be omitted.

[0344] Figure 32 is a cross-sectional view showing Figure 26 Another modified example of the display device shown in

[0345] Referring to Figure 32 , the display device 2f according to the present embodiment is different from the display device 2 according to the embodiment of Figure 26 in that it includes a second dam member ODMa and a second support member OSb, and is substantially the same as or similar to the display device 2 according to the embodiment of Figure 26 in other configurations. A more detailed description of the second dam member ODMa is the same as or similar to those described above in Figure 21 The embodiments are the same as or similar to those, and a more detailed description of the second support member OSb is the same as or similar to those described above in Figure 19 The embodiments are the same as or similar to those, and thus will be omitted.

[0346] Figure 33 is a cross-sectional view showing Figure 26 Another modified example of the display device shown in

[0347] Referring to Figure 33 , the display device 2g according to the present embodiment is different from the display device 2 according to the embodiment of Figure 26 in that it includes a second dam member ODMa and a second support member OSc, and is substantially the same as or similar to the display device 2 according to the embodiment of Figure 26 in other configurations. A more detailed description of the second dam member ODMa is the same as or similar to those described above in Figure 21 The embodiments are the same as or similar to those, and a more detailed description of the second support member OSc is the same as or similar to those described above in Figure 20 The embodiments are the same as or similar to those, and thus will be omitted.

[0348] Meanwhile, although not shown in the drawings, various modifications can be made to the structure of the display device in addition to the above embodiments. For example, the structure exemplified as the structure of the second support member can be used as the structure of the second dam member. For example, the second dam member may include the same material as the outer coating or the color filter.

[0349] The embodiments of the present disclosure have been described above with reference to the accompanying drawings. However, those of ordinary skill in the art to which the present disclosure pertains will understand that various modifications and changes can be made without departing from the technical spirit or essential features of the present disclosure. Therefore, it is to be understood that in all respects, the above-described embodiments are illustrative and not restrictive.

Claims

1. A display device, comprising: a base member in which a display area and a non-display area surrounding the display area are defined; a dam member and a support member, the dam member and the support member being located on the base member and in the non-display area; a connection pad located on the base member and in the non-display area; a light-emitting element located on the base member and in the display area; an inorganic layer located on the light-emitting element; a wavelength conversion pattern located on the inorganic layer and overlapping with the light-emitting element; a cover layer located on the wavelength conversion pattern; and a color filter located on the cover layer and overlapping with the wavelength conversion pattern; wherein the dam member is located between the support member and the display area, the support member is located between the connection pad and the dam member, the inorganic layer and the cover layer are in contact with each other in the non-display area, and the inorganic layer and the cover layer overlap with the connection pad.

2. The display device according to claim 1, wherein the dam member is arranged to surround the display area, the support member is arranged to surround the dam member.

3. The display device according to claim 1, wherein an opening exposing the connection pad is defined in the inorganic layer and the cover layer.

4. The display device according to claim 3, further comprising: a bank pattern located between the inorganic layer and the cover layer and in contact with the wavelength conversion pattern, wherein the dam member and the bank pattern are made of the same material.

5. The display device according to claim 4, further comprising: an outer coating located between the color filter and the wavelength conversion pattern, wherein the support member is made of the same material as at least one of the bank pattern, the color filter, and the outer coating.

6. The display device according to claim 5, wherein the refractive index of the outer coating is lower than the refractive index of the wavelength conversion pattern.

7. The display device according to claim 1, further comprising: a packaging layer located on the color filter and including a lower inorganic layer, an upper inorganic layer, and an organic layer located between the lower inorganic layer and the upper inorganic layer, wherein the dam member overlaps with the lower inorganic layer and the upper inorganic layer, and the connection pad and the support member do not overlap with the lower inorganic layer and the upper inorganic layer.

8. The display device according to claim 7, wherein the ends of the lower inorganic layer and the ends of the upper inorganic layer are located between the support member and the dam member.

9. The display device according to claim 7, wherein the connection pad does not overlap with the packaging layer in a plan view.

10. The display device according to claim 7, further comprising: a bank pattern located between the inorganic layer and the cover layer and in contact with the wavelength conversion pattern, wherein a part of the organic layer is located between the dam member and the bank pattern.

Images