Light-emitting substrate, manufacturing method thereof and display device

Abstract

Disclosed is a light emitting substrate. The light-emitting substrate comprises a display area and a non-display area, and the non-display area is located on at least one side of the display area. The light-emitting substrate further comprises a substrate and a plurality of light-emitting units and a heat dissipation layer which are located on the substrate. The light-emitting units are arranged in the display area in an array mode. The heat dissipation layer is located on the substrate, the heat dissipation layer comprises a first heat dissipation structure located in the display area and a second heat dissipation structure located in the non-display area, and the first heat dissipation structure is connected with the second heat dissipation structure. The first heat dissipation structure comprises a plurality of openings, and the orthographic projection of the light-emitting unit on the substrate is located in the orthographic projection of the openings on the substrate.

Description

Light-emitting substrate, manufacturing method thereof, and display device Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a light-emitting substrate and a manufacturing method thereof, and a display device. Background Art

[0002] Light-emitting diode (LED) chips, including micro organic light-emitting diodes (Micro LEDs) and mini organic light-emitting diodes (Mini LEDs), can be used to achieve seamless display devices. Mini / Micro LED displays offer high contrast, long life, and low power consumption.

[0003] At present, Mini / Micro LED display devices, from small-size products with high precision to high-end large-screen products, have strong commercial demand and a wide range of application scenarios.

[0004] Summary of the Invention

[0005] On the one hand, a light-emitting substrate is provided. The light-emitting substrate includes a display area and a non-display area, and the non-display area is located on at least one side of the display area. The light-emitting substrate also includes a substrate and a plurality of light-emitting units and a heat dissipation layer located on the substrate. The plurality of light-emitting units are arranged in an array within the display area. The heat dissipation layer is located on the substrate, and the heat dissipation layer includes a first heat dissipation structure located in the display area and a second heat dissipation structure located in the non-display area, and the first heat dissipation structure is connected to the second heat dissipation structure. The first heat dissipation structure includes a plurality of openings, and the orthographic projections of the light-emitting units on the substrate are located within the orthographic projections of the openings on the substrate.

[0006] In some embodiments, the light-emitting substrate further includes a binding electrode layer, the binding electrode layer being located between the substrate and the light-emitting unit. The binding electrode layer includes a plurality of binding electrodes, each of which is located within the opening, and the binding electrodes in different openings are electrically connected to different light-emitting units. The heat dissipation layer and the binding electrode layer are disposed on the same layer.

[0007] In some embodiments, a first minimum distance between two adjacent light-emitting units is D1, and a width of the first heat dissipation structure between the two adjacent light-emitting units ranges from 0.05D1 to 0.95D1.

[0008] In some embodiments, the width of the first heat dissipation structure located between two adjacent light-emitting units ranges from 0.14D1 to 0.63D1.

[0009] In some embodiments, a first gap is formed between the first heat dissipation structure located between two adjacent light-emitting units and the two adjacent light-emitting units.

[0010] In some embodiments, the light-emitting unit includes a plurality of light-emitting devices, and the light-emitting devices include a first color light-emitting device and a second color light-emitting device. The first color light-emitting device is a light-emitting device that emits red light, and the second color light-emitting device is a light-emitting device that emits green light and / or a light-emitting device that emits blue light. The first heat dissipation structure includes a plurality of interconnected first heat dissipation substructures, one of the first heat dissipation substructures is arranged around one of the light-emitting units, and the minimum spacing between the interface of two adjacent first heat dissipation substructures and the light-emitting units they respectively surround is equal. The first heat dissipation substructure includes a first part and a second part connected in sequence, the first part is arranged along the edge of a portion of the first color light-emitting device, and the second part is arranged along the edge of a portion of the second color light-emitting device, and the minimum spacing between the first part and the first color light-emitting device is less than or equal to the minimum spacing between the second part and the second color light-emitting device.

[0011] In some embodiments, the thickness of the first portion is greater than or equal to the thickness of the second portion; and / or the width of the first portion is greater than or equal to the width of the second portion.

[0012] In some embodiments, the multiple light-emitting units include a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit. The first light-emitting unit includes a first light-emitting device that emits red light, the second light-emitting unit includes a second light-emitting device that emits green light, and the third light-emitting unit includes a third light-emitting device that emits blue light. The first heat dissipation structure includes multiple interconnected second heat dissipation substructures, each of which is disposed around one of the light-emitting units, and the minimum spacing between the interface between two adjacent second heat dissipation substructures and the light-emitting units they surround is equal. The multiple second heat dissipation substructures include a first type of second heat dissipation substructure, a second type of second heat dissipation substructure, and a third type of second heat dissipation substructure. The first type of second heat dissipation substructure is disposed around the first light-emitting unit, the second type of second heat dissipation substructure is disposed around the second light-emitting unit, and the third type of second heat dissipation substructure is disposed around the third light-emitting unit. The minimum spacing between the first type of second heat dissipation substructure and the first light-emitting unit is less than or equal to the minimum spacing between the second type of second heat dissipation substructure and the second light-emitting unit; and / or the minimum spacing between the first type of second heat dissipation substructure and the first light-emitting unit is less than or equal to the minimum spacing between the third type of second heat dissipation substructure and the second light-emitting unit.

[0013] In some embodiments, the thickness of the first second heat dissipation substructure is greater than or equal to the thickness of the second second heat dissipation substructure; and / or the thickness of the first second heat dissipation substructure is greater than or equal to the thickness of the third second heat dissipation substructure.

[0014] In some embodiments, the width of the first second heat dissipation substructure is greater than or equal to the width of the second second heat dissipation substructure; and / or the width of the first second heat dissipation substructure is greater than or equal to the width of the third second heat dissipation substructure.

[0015] In some embodiments, in a direction from the display area to the non-display area, a width of the second heat dissipation structure ranges from 200 μm to 1000 μm.

[0016] In some embodiments, along a direction from the display area to the non-display area, the second heat dissipation structure includes a main body portion and a tooth portion, and the tooth portion is located on a side of the main body portion away from the display area. The tooth portion includes a plurality of teeth arranged along a first direction, the first direction being approximately perpendicular to the direction from the display area to the non-display area, and the first direction being approximately perpendicular to the thickness of the substrate.

[0017] In some embodiments, along the first direction, the width of the insert teeth ranges from 2.5 μm to 45 μm; and / or, along the first direction, the second minimum spacing between two adjacent insert teeth ranges from 2.5 μm to 45 μm.

[0018] In some embodiments, along the direction from the display area to the non-display area, the length L of the inserting teeth satisfies: L≥0.5W2, where W2 is the width of the second heat dissipation structure in the direction from the display area to the non-display area.

[0019] In some embodiments, the second heat dissipation structure includes a plurality of grooves and / or a plurality of vias.

[0020] In some embodiments, the non-display area includes a main area, a bending area, and a back area connected in sequence, the main area and the display area are connected, and along the thickness direction of the substrate, the main area and the back area are arranged opposite each other. The second heat dissipation structure extends to the bending area or the back area.

[0021] In some embodiments, along the thickness direction of the substrate, the thickness of the heat dissipation layer is less than or equal to the thickness of the light emitting unit.

[0022] In some embodiments, the light-emitting unit includes a light-emitting device, which includes, in order from the substrate, a first electrode, a light-generating layer, and a second electrode. The light-emitting substrate further includes a connecting electrode layer, which is located on a side of the light-emitting device away from the substrate, and is electrically connected to the second electrodes of the plurality of light-emitting devices, and is in contact with the first heat dissipation structure.

[0023] In some embodiments, the first heat dissipation structure in the heat dissipation layer is reused as a touch layer, and the first heat dissipation structure includes a plurality of first touch electrodes and a plurality of second touch electrodes, and the first touch electrodes and the second touch electrodes are arranged in an alternating manner.

[0024] In some embodiments, the light-emitting substrate further includes a drive circuit layer and a support layer. The drive circuit layer is located between the light-emitting unit and the substrate and includes multiple drive circuits electrically connected to the light-emitting unit. The support layer is located between the first heat dissipation structure and the drive circuit layer. The thickness of the support layer along the thickness of the substrate is greater than or equal to 10 μm.

[0025] On the other hand, a method for manufacturing a light-emitting substrate is provided. The light-emitting substrate includes: a display area and a non-display area, and the non-display area is located on at least one side of the display area. The manufacturing method includes: forming a heat dissipation layer on a substrate, the heat dissipation layer includes a first heat dissipation structure located in the display area and a second heat dissipation structure located in the non-display area, the first heat dissipation structure is connected to the second heat dissipation structure; the first heat dissipation structure includes a plurality of openings. A plurality of light-emitting units are transferred to the substrate, and the plurality of light-emitting units are arranged in an array on the substrate, and the orthographic projection of the light-emitting unit on the substrate is located inside the orthographic projection of the opening on the substrate.

[0026] In some embodiments, the light-emitting substrate further comprises a binding electrode layer located between the substrate and the light-emitting unit; the binding electrode layer comprises a plurality of binding electrodes, the binding electrodes being located within the openings, and the binding electrodes located within the same opening being electrically connected to the light-emitting device. Forming the heat dissipation layer on the substrate comprises forming the binding electrode layer and the heat dissipation layer using the same mask.

[0027] In another aspect, a display device is provided, comprising: a light-emitting substrate as described in any one of the above embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] To more clearly illustrate the technical solutions of the present disclosure, the following briefly introduces the drawings required for use in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure, and those skilled in the art can also derive other drawings based on these drawings. Furthermore, the drawings described below are schematic diagrams and are not intended to limit the actual dimensions of the products, actual processes of the methods, etc. involved in the embodiments of the present disclosure.

[0029] FIG1 is a structural diagram of a display device according to some embodiments;

[0030] FIG2 is a top view of a light emitting substrate according to some possible implementations;

[0031] FIG3 is a cross-sectional view taken along line BB' in FIG2;

[0032] FIG4 is a top view of a light emitting substrate according to some embodiments;

[0033] FIG5 is a cross-sectional view taken along the line CC' in FIG4 ;

[0034] FIG6 is a top view of a light emitting substrate according to some other embodiments;

[0035] FIG7 is another cross-sectional view taken along line CC' in FIG4 ;

[0036] FIG8 is a cross-sectional view of a light emitting substrate according to some embodiments;

[0037] FIG9 is a top view of a light emitting substrate according to yet other embodiments;

[0038] FIG10 is a top view of the two first heat dissipation substructures in FIG9 ;

[0039] FIG11 is a cross-sectional view taken along the line EE' in FIG6;

[0040] FIG12 is a top view of a light emitting substrate according to yet other embodiments;

[0041] FIG13 is a top view of a light emitting substrate according to yet other embodiments;

[0042] FIG14 is another cross-sectional view taken along line CC' in FIG4 ;

[0043] FIG15 is a top view of a light emitting substrate according to yet other embodiments;

[0044] FIG16 is a top view of a light emitting substrate according to yet other embodiments;

[0045] FIG17 is an enlarged view of a portion of the touch electrodes in FIG16 ;

[0046] FIG18 is a cross-sectional view of a light-emitting substrate according to some other embodiments;

[0047] FIG19 is a top view of a light emitting substrate according to yet other embodiments;

[0048] FIG20 is a top view of a light emitting substrate according to yet other embodiments;

[0049] FIG21 is a structural diagram of a portion of the gear shaping in FIG20;

[0050] FIG22 is a structural diagram of a tooth inserting portion in a second heat dissipation structure according to some embodiments;

[0051] FIG23 is a structural diagram of a tooth inserting portion in a second heat dissipation structure according to other embodiments;

[0052] FIG24 is a structural diagram of a tooth inserting portion in a second heat dissipation structure according to yet other embodiments;

[0053] FIG25 is a top view of a light emitting substrate according to yet other embodiments;

[0054] FIG26 is a structural diagram of the groove in FIG25;

[0055] FIG27 is a top view of a light emitting substrate according to yet other embodiments;

[0056] FIG28 is a structural diagram of the via in FIG27 ;

[0057] FIG29 is a structural diagram of a via hole in a second heat dissipation structure according to some embodiments;

[0058] FIG30 is a structural diagram of vias in a second heat dissipation structure according to other embodiments;

[0059] FIG31 is a structural diagram of vias in a second heat dissipation structure according to yet other embodiments;

[0060] FIG32 is a structural diagram of vias in a second heat dissipation structure according to yet other embodiments;

[0061] FIG33 is a cross-sectional view of a light-emitting substrate according to yet other embodiments;

[0062] FIG34 is a cross-sectional view of a light-emitting substrate according to yet other embodiments;

[0063] FIG35 is a flow chart of a method for manufacturing a light-emitting substrate according to some embodiments;

[0064] FIG36 is a block diagram of some steps in FIG35;

[0065] FIG37 is a structural diagram of some steps in a method for manufacturing a light-emitting substrate according to some embodiments;

[0066] FIG38 is a structural diagram of other steps in the method for manufacturing a light-emitting substrate according to some embodiments. DETAILED DESCRIPTION

[0067] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the embodiments described are only some embodiments of the present disclosure, not all embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present disclosure.

[0068] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and its other forms, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open and inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" are intended to indicate that the particular features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the particular features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0069] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0070] When describing some embodiments, the word "connected" and its derivatives may be used. The term "connected" should be understood broadly. For example, "connected" can mean fixed, removable, or integrated; it can be directly connected or indirectly connected through an intermediary. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0071] “At least one of A, B and C” has the same meaning as “at least one of A, B or C” and both include the following combinations of A, B and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B and C.

[0072] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0073] As used herein, the term "if" is optionally interpreted to mean "when" or "upon" or "in response to determining" or "in response to detecting," depending on the context. Similarly, the phrases "if it is determined that" or "if [stated condition or event] is detected" are optionally interpreted to mean "upon determining" or "in response to determining" or "upon detecting [stated condition or event]" or "in response to detecting [stated condition or event]," depending on the context.

[0074] Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more stated conditions or values ​​may, in practice, be based on additional conditions or values ​​beyond those stated.

[0075] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0076] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within an acceptable deviation range, wherein the acceptable deviation range is as determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality can be, for example, that the difference between the two equals is less than or equal to 5% of either one.

[0077] It will be understood that when a layer or element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present therebetween.

[0078] Exemplary embodiments are described herein with reference to cross-sectional and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include deviations in shape due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0079] FIG. 1 is a structural diagram of a display device according to some embodiments.

[0080] As shown in FIG. 1 , some embodiments of the present disclosure provide a display device 200 , which includes a light-emitting substrate 100 .

[0081] Exemplarily, the display device 200 can be a quantum dot electroluminescent display device (Quantum Dot Light Emitting Diodes, referred to as QLED), a liquid crystal display device (Liquid Crystal Display, referred to as LCD), a Mini LED (Mini Light-Emitting Diode, referred to as Mini LED) display device and a Micro LED (Micro Light-Emitting Diode, referred to as Micro LED) display device.

[0082] In the case where the display device 200 is a liquid crystal display device, in some embodiments, the display device 200 includes a cover glass, a liquid crystal display panel, and a backlight assembly. The backlight assembly is used to provide a light source for the liquid crystal display panel. Among them, the backlight assembly includes a light-emitting substrate 100, which provides light to the liquid crystal display panel so that the liquid crystal display panel can display a picture. In some examples, the backlight module in the display device 200 may further include an optical film, which is located on the side of the light-emitting substrate 100 close to the liquid crystal display panel. The optical film may include a reflective sheet, a diffuser, a brightness enhancement film (prism sheet), a diffuser, etc., which can be used to improve the brightness and uniformity of light.

[0083] When the display device 200 is a Mini LED display device or a Micro LED display device, in some embodiments, the display device 200 includes at least one light-emitting substrate 100, and the light-emitting substrate 100 can realize image display.

[0084] In some examples, the display device 200 may include a plurality of light-emitting substrates 100 , which are spliced ​​together to form the display device 200 . Alternatively, the display device 200 may also include a single light-emitting substrate 100 .

[0085] In some examples, the display device 200 may further include an anti-reflection film layer and a protective cover plate. The anti-reflection film layer is located between the light-emitting substrate 100 and the protective cover plate. The anti-reflection film layer includes a polarizer, which may be a circular polarizer. The polarizer can reduce external light emission and prevent the light-emitting substrate 100 from reflecting ambient light, thereby causing glare.

[0086] Exemplarily, the display device 200 can be any display device that displays images, whether in motion (e.g., video) or fixed (e.g., still images), and whether text or images. More specifically, it is expected that the display device of the embodiments described can be implemented in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal data assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, camcorders, game consoles, watches, clocks, calculators, television monitors, flat-panel displays, computer monitors, automotive displays (e.g., odometer displays, etc.), navigation systems, cockpit controls and / or displays, displays of camera views (e.g., displays of rearview cameras in vehicles), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., displays of images of a piece of jewelry), etc.

[0087] The following description will take a display device 200 in which a Micro LED light-emitting device + a quantum dot film layer (Quantum-Dot, QD) is used as an example.

[0088] FIG2 is a structural diagram of a light-emitting substrate according to some possible implementations, and FIG3 is a cross-sectional diagram taken along line BB′ in FIG2 .

[0089] Referring to Figures 2 and 3 , some embodiments of the present disclosure provide a light-emitting substrate 100. For example, the light-emitting substrate 100 can be used as the light-emitting substrate 100 in the display device 200 provided in any of the above embodiments. Of course, the light-emitting substrate 100 can also be used in other display devices, and this disclosure does not limit this.

[0090] The light-emitting substrate 100 includes a display area (Active Area, abbreviated as AA area; also called effective display area) AA and a non-display area SA. The non-display area SA is located on at least one side of the display area AA (for example, one side; for example, all four sides, i.e., including the upper and lower sides and the left and right sides).

[0091] The light-emitting substrate 100 further includes a substrate 10 and a plurality of light-emitting units P located on the substrate 10. The plurality of light-emitting units P are arranged in an array within the display area AA, with each light-emitting unit P including at least one light-emitting device O. Each light-emitting unit P may include one light-emitting device O. Alternatively, each light-emitting unit may include three light-emitting devices O. However, the embodiment of the present disclosure is not limited to this number of light-emitting devices O in the light-emitting unit P.

[0092] For the convenience of explanation, the above-mentioned multiple light-emitting units P are described in the present disclosure by taking a matrix arrangement as an example.

[0093] In some examples, the plurality of light emitting units P on the light emitting substrate 100 may be arranged in an array with equal spacing in the row direction X and the column direction Y. This arrangement allows the plurality of light emitting units P to be evenly distributed on the light emitting substrate 100 , thereby improving the display uniformity of the light emitting substrate 100 .

[0094] For example, the row direction X and the column direction Y may be approximately perpendicular, and the angle between the row direction X and the column direction Y is approximately 90°. For example, the angle between the row direction X and the column direction Y may be 85°, 90°, or 95°.

[0095] In a one-side example, the light-emitting substrate 100 further includes an optical conversion layer, and the optical conversion layer is located on a side of the light-emitting device O away from the substrate 10 .

[0096] In some examples, the optical conversion layer is a quantum dot film layer (Quantum-Dot, abbreviated as QD), which is usually a film layer formed by an organic material with added quantum dot material, and realizes the light conversion function through the quantum dot material.

[0097] The optical conversion layer includes multiple color conversion sections. The orthographic projection of a color conversion section on substrate 10 at least partially overlaps with the orthographic projection of a light-emitting device O on substrate 10. This arrangement allows the color conversion sections to modulate the light emitted by the light-emitting devices O so that each light-emitting device O emits a target light beam, thereby forming a display image.

[0098] For example, the light-emitting device O may be a Micro LED light-emitting device, but is not limited thereto. The embodiments of the present disclosure do not limit the type of light-emitting device. That is, the light-emitting device O may be any other light-emitting device (e.g., a light-emitting device that emits light through discharge), as long as it can emit light so that the display device 200 can display an image.

[0099] Regardless of any of the above structures, the light-emitting substrate 100 is provided with multiple light-emitting devices O. The inventors have discovered that when multiple light-emitting devices O on the light-emitting substrate 100 are in an operating state (lit state) for a long time, they generate heat in the light-emitting devices O, causing them to overheat. Prolonged heating of the light-emitting devices O can induce the Droop effect (high temperatures generate more hot electrons, and the energy from the recombination of electrons and holes in the PN junction is easily captured by hot electrons rather than generating photons, i.e., non-radiative recombination is more likely to occur in the active region). This can reduce the luminous efficiency of the light-emitting devices O and affect the display uniformity of the light-emitting substrate 100.

[0100] At the same time, the long-term heating of the light-emitting device O may also cause light color shift, reduce the service life of the light-emitting device O, and affect the reliability of the light-emitting substrate 100.

[0101] Figure 4 is a top view of a light-emitting substrate according to some embodiments, Figure 5 is a cross-sectional view taken along the line C-C' in Figure 4 , and Figure 6 is a top view of a light-emitting substrate according to other embodiments. Figure 4 illustrates an example in which a light-emitting unit P includes one light-emitting device O, while Figure 6 illustrates an example in which a light-emitting unit P includes multiple light-emitting devices O.

[0102] Based on the above issues, as shown in Figures 4 to 6 , the light-emitting substrate 100 provided in some embodiments of the present disclosure further includes a heat dissipation layer 20. The heat dissipation layer 20 includes a first heat dissipation structure 21 located in the display area AA and a second heat dissipation structure 22 located in the non-display area SA, with the first heat dissipation structure 21 connected to the second heat dissipation structure 22. The first heat dissipation structure 21 includes a plurality of openings K, and the orthographic projections of the light-emitting units P on the substrate 10 are located within the orthographic projections of the openings K on the substrate 10. The light-emitting units P include at least one light-emitting device O.

[0103] Based on this, it is equivalent to disposing the first heat dissipation structure 21 in the heat dissipation layer 20 around the light emitting unit P, that is, it is equivalent to disposing the first heat dissipation structure 21 in the heat dissipation layer 20 around the light emitting device O in the light emitting unit P. Furthermore, the first heat dissipation structure 21 in the heat dissipation layer 20 can be used to absorb the heat emitted by the light emitting unit P (light emitting device O).

[0104] Furthermore, because the heat dissipation layer 20 also includes a second heat dissipation structure 22 located in the non-display area SA, and the first heat dissipation structure 21 located in the display area AA is structurally connected to the second heat dissipation structure 22 located in the non-display area SA, the second heat dissipation structure 22 can be used to conduct heat absorbed by the first heat dissipation structure to the non-display area of ​​the light-emitting substrate 100. Therefore, the first heat dissipation structure 21 located in the display area AA and the second heat dissipation structure 22 located in the non-display area SA in the heat dissipation layer 20 can cooperate with each other in the light-emitting substrate 100 to conduct heat generated by each light-emitting unit P (light-emitting device O) in the display area AA of the light-emitting substrate 100 to the non-display area SA. This heat dissipation improves the heat dissipation performance of the light-emitting substrate 100 and prevents heat accumulation in each light-emitting unit P (light-emitting device O) in the light-emitting substrate 100, which could affect the lifespan and uniformity of the light-emitting substrate 100.

[0105] In some examples, the first heat dissipation structure 21 and the second heat dissipation structure 22 in the heat dissipation layer 20 are disposed in the same layer.

[0106] It should be noted that "same layer" refers to a layer structure formed using the same film-forming process to form a specific pattern, and then using the same mask through a single patterning process. Depending on the specific pattern, a single patterning process may include multiple exposure, development, or etching processes, and the specific pattern in the resulting layer structure may be continuous or discontinuous, and these specific patterns may also be at different heights or have different thicknesses.

[0107] As described above, the first heat dissipation structure 21 and the second heat dissipation structure 22 in the heat dissipation layer 20 can be formed using the same patterning process. That is, the first heat dissipation structure 21 and the second heat dissipation structure 22 in the heat dissipation layer 20 can be formed using a single mask, eliminating the need for two masks. This can help reduce process steps and increase production capacity. However, the disclosed embodiments are not limited to this. The first heat dissipation structure 21 and the second heat dissipation structure 22 can also be formed separately using two separate fabrication processes.

[0108] In summary, the light-emitting substrate 100 provided in the embodiments of the present disclosure can be additionally provided with a heat dissipation layer 20, which includes a first heat dissipation structure 21 and a second heat dissipation structure 22 connected to each other. The first heat dissipation structure 21 of the heat dissipation layer 20, located within the display area AA, is formed with multiple openings K, and the light-emitting units P are located within the openings K, so that the first heat dissipation structure 21 is disposed around the light-emitting units P. Furthermore, the first heat dissipation structure 21 in the heat dissipation layer 20 can be utilized to absorb heat emitted by the light-emitting devices O within each light-emitting unit P. Furthermore, the second heat dissipation structure 22 located within the non-display area SA can be utilized to conduct the heat absorbed by the first heat dissipation structure 21 to the non-display area SA of the light-emitting substrate 100, thereby dissipating the heat and improving the heat dissipation performance of the light-emitting substrate 100. This prevents heat accumulation in the light-emitting devices O within the light-emitting substrate 100, which could affect the lifespan and uniformity of the light-emitting substrate 100.

[0109] In some embodiments, as shown in FIG5 , the light-emitting substrate 100 further includes a driving circuit layer T, which is located between the substrate 10 and the light-emitting unit P. The driving circuit layer T includes a plurality of driving circuits T1 electrically connected to the light-emitting unit P. Therefore, the driving circuits T1 in the driving circuit layer T are used to drive the light-emitting unit P to emit light.

[0110] In some examples, a light-emitting device O may include a driving circuit T1 and a light-emitting device O electrically connected to the driving circuit T1. The driving circuit T1 can be adjusted based on a variety of different signal lines to generate a driving signal. Each light-emitting device O can emit light under the driving effect of the driving signal generated by the corresponding driving circuit Q. Based on this, the driving circuit T1 within each of the light-emitting devices O can drive the corresponding light-emitting device O to emit light, so that the light-emitting substrate 100 can display an image in the display area AA.

[0111] In some examples, the multiple driving circuits T1 can be electrically connected to the multiple light emitting devices O in a one-to-one correspondence. In other examples, one driving circuit T1 can be electrically connected to multiple light emitting devices O, or multiple driving circuits T1 can be electrically connected to one light emitting device O.

[0112] Hereinafter, the present disclosure takes the electrical connection between a driving circuit T1 and a light-emitting device O as an example to schematically illustrate the structure of the light-emitting substrate 100 .

[0113] In addition, the driving circuit layer T further includes a plurality of voltage signal lines electrically connected to the light emitting device O. Based on this, the driving circuit T1 in the driving circuit layer T cooperates with the voltage signal lines to drive the light emitting device O to emit light.

[0114] FIG. 7 is another cross-sectional view taken along line CC' in FIG. 4 .

[0115] In some embodiments, please refer to FIG. 5 and FIG. 7 , and take the light-emitting device O as a Micro LED light-emitting device as an example for introduction.

[0116] The light emitting device O in the light emitting unit P includes a first electrode 01 , a first semiconductor layer 02 electrically connected to the first electrode 01 , a light generating layer 03 , a second semiconductor layer 04 , and a second electrode 05 electrically connected to the second semiconductor layer 04 .

[0117] The first electrode 01 and the second electrode 05 in the light emitting device O in the light emitting unit P may be electrically connected to the driving circuit layer T, so as to realize electrical connection between the light emitting unit P and the driving circuit layer T, thereby driving the light emitting unit P to emit light.

[0118] Exemplarily, the first electrode 01 in the light-emitting device O is electrically connected to the driving circuit T1 in the driving circuit layer T, and the second electrode 05 in the light-emitting device O is connected to the voltage signal line. Based on this, the driving circuit T1 in the driving circuit layer T and the voltage signal line are coordinated to drive the light-emitting device O to emit light.

[0119] In some examples, the material of the first semiconductor layer 02 may be P-type gallium nitride (P-GaN), the material of the second semiconductor layer 04 may be N-type gallium nitride (N-GaN), and the light generating layer 03 may be a multiple quantum well layer (MQW). However, some embodiments of the present disclosure are not limited thereto.

[0120] In some examples, the light emitting device O may include two structures:

[0121] The first type: As shown in Figure 5, the Micro LED light-emitting device is a vertical Micro LED light-emitting device. In this case, the first electrode 01, the first semiconductor layer 02, the light-generating layer 03, the second semiconductor layer 04, and the second electrode 05 are stacked in sequence in the light-emitting device O, with the first electrode 01 and the second electrode 05 located on either side of the light-emitting device O.

[0122] The second type: As shown in Figure 7, the Micro LED light-emitting device is a flip-chip Micro LED light-emitting device. In this case, the first electrode 01, first semiconductor layer 02, light-generating layer 03, and second semiconductor layer 04 in the light-emitting device O are stacked in sequence, with the second semiconductor layer 04 protruding from the light-generating layer 03. The second electrode 05 is located on the side of the second semiconductor layer 04 closest to the substrate 10. In other words, the first electrode 01 and the second electrode 05 in the light-emitting device O are located on the side of the light-emitting device O closest to the substrate 10.

[0123] However, the present disclosure is not limited to the above two types of light-emitting devices O. For example, the light-emitting device O may also be a vertical Micro LED light-emitting device. The following description will take a vertical Micro LED light-emitting device as an example.

[0124] In some embodiments, as shown in FIG5 , the light-emitting substrate 100 further includes a binding electrode layer 30 . The binding electrode layer 30 is located between the substrate 10 and the light-emitting unit P. The binding electrode layer 30 includes a plurality of binding electrodes 31 . The binding electrodes 31 are located within the openings K, and the binding electrodes 31 within different openings K are electrically connected to different light-emitting units P. Exemplarily, the binding electrodes 31 within an opening K are electrically connected to the light-emitting unit P corresponding to the opening.

[0125] Based on this, the light emitting unit P can be electrically connected to the driving circuit T1 in the driving circuit layer T through the binding electrode 31 . The binding electrode 31 can transmit the driving signal provided by the driving circuit T1 to the light emitting unit P to drive the light emitting unit P to emit light.

[0126] In some examples, the light-emitting device O in the light-emitting unit P is a vertical Micro LED light-emitting device O. Each light-emitting device O is electrically connected to one binding electrode 31. Exemplarily, one end of the binding electrode 31 is electrically connected to the first electrode O1 in the light-emitting device O, and the other end of the binding electrode 31 is electrically connected to the driving circuit T1.

[0127] In other examples, taking the flip-chip Micro LED light-emitting device O in the light-emitting unit P as an example, each light-emitting device O is electrically connected to two binding electrodes 31. For example, a first end of one of the two binding electrodes 31 is electrically connected to the first electrode O1 in the light-emitting device O, and the other end of the binding electrode 31 is electrically connected to the driving circuit T1. Another of the two binding electrodes 31 has one end electrically connected to the second electrode O5 in the light-emitting device O, and the other end of the binding electrode 31 is electrically connected to the voltage signal line.

[0128] Based on this, the light-emitting device O can be electrically connected to the driving circuit T1 in the driving circuit layer T through the binding electrode 31. The binding electrode 31 can transmit the driving signal provided by the driving circuit T1 to the light-emitting device O to drive the light-emitting device O to emit light.

[0129] In some embodiments, as shown in FIG5 , the heat dissipation layer 20 and the binding electrode layer 30 are disposed on the same layer.

[0130] It should be noted that "same layer" refers to a layer structure formed using the same film-forming process to form a specific pattern, and then using the same mask through a single patterning process. Depending on the specific pattern, a single patterning process may include multiple exposure, development, or etching processes, and the specific pattern in the resulting layer structure may be continuous or discontinuous, and these specific patterns may also be at different heights or have different thicknesses.

[0131] Based on this, the heat dissipation layer 20 and the bonding electrode layer 30 can be formed using the same patterning process. That is, the heat dissipation layer 20 and the bonding electrode layer 30 can be formed using a single mask, eliminating the need for a separate mask and patterning process to form the heat dissipation layer 20. This can reduce process steps, increase production capacity, and conserve resources.

[0132] However, the embodiments of the present disclosure are not limited thereto. The heat dissipation layer 20 and the bonding electrode layer 30 may also be formed separately using two separate fabrication processes. For example, to increase the thickness of the heat dissipation layer 20 and thereby enhance the heat dissipation effect of the heat dissipation layer, the heat dissipation layer 20 and the bonding electrode layer 30 may be formed separately using two separate fabrication processes.

[0133] In some embodiments, as shown in FIG5 , the light-emitting substrate 100 further includes a first insulating layer G1, which is located between the driving circuit layer T and the binding electrode layer 30. The first insulating layer G1 can play a planarizing role, facilitating the formation of other film layers on the side of the first insulating layer G1 away from the substrate 10. For example, the binding electrode layer 30 can be formed on the side of the first insulating layer G1 away from the substrate 10.

[0134] FIG8 is a cross-sectional view of a light emitting substrate according to some embodiments.

[0135] In some embodiments, please refer to Figures 5 and 8 , where the light-emitting device O in the light-emitting unit P is a vertical Micro LED light-emitting device, and the first electrode 01 and the second electrode 05 are respectively located on both sides of the light-generating layer 03: the light-emitting substrate 100 also includes a connecting electrode layer 40, which is located on the side of the light-emitting device O away from the substrate 10, and the connecting electrode layer 40 is electrically connected to the second electrodes 01 of multiple light-emitting devices O.

[0136] For example, the second electrodes O5 of multiple light-emitting devices O can be electrically connected using the connecting electrode layer 40, and then electrically connected to the voltage signal line using the connecting electrode layer 40. Based on this, the voltage signal line can use the connecting electrode layer 40 to transmit the power signal provided by it to the multiple light-emitting devices O, and then cooperate with the driving signal provided by the driving circuit T1 to drive the light-emitting devices O to emit light.

[0137] As shown in the above structure, it is not necessary to set a conductive portion for each second electrode 05 of each light-emitting device O to be electrically connected to the voltage signal line, which can help simplify the internal space of the light-emitting substrate 100 and facilitate the wiring layout of the light-emitting substrate 100.

[0138] In some examples, part of the connecting electrode layer 40 is located on the side of the light-emitting device O away from the substrate 10, part of the connecting electrode layer 40 is located on the side of the first heat dissipation structure 21 away from the substrate 10, and the part of the connecting electrode layer 40 is directly in contact with the first heat dissipation structure 21.

[0139] In this way, when the material of the first heat dissipation structure 21 is a metal material, the first heat dissipation structure 21 is in contact with the connecting electrode layer 40. Since the first heat dissipation structure 21 is also a conductive part, it is equivalent to using the first heat dissipation structure 21 to increase the cross-sectional area of ​​the connecting electrode layer 40, which is beneficial to reducing the resistance of the connecting electrode layer 40, reducing the voltage drop (IR Drop) of the connecting electrode layer 40, and reducing the influence of the impedance of the connecting electrode layer 40 on the power signal voltage provided by the voltage signal line, which is beneficial to improving the brightness uniformity of the light-emitting substrate 100.

[0140] In some embodiments, as shown in FIG8 , the light-emitting substrate 100 may further include a second insulating layer G2, which is located between the light-emitting unit P and the connecting electrode layer 40. The second insulating layer G2 includes a through hole, which may expose the second electrode 05 of the light-emitting device O in the light-emitting unit P, so that the connecting electrode layer 40 is electrically connected to the second electrode 05 of the light-emitting device O in the light-emitting unit P through the through hole.

[0141] In some embodiments, as shown in FIG8 , the light-emitting substrate 100 further includes a protective layer R, which is located on the side of the connecting electrode layer 40 away from the substrate 10. The protective layer R can act as a buffer and shock absorber to prevent damage to the light-emitting substrate 100 from external impacts. Furthermore, placing the protective layer R on the side of the connecting electrode layer 40 away from the substrate 10 can also prevent scratches on the film between the protective layer R and the substrate 10, thereby improving the quality of the light-emitting substrate 100.

[0142] In some examples, the material of the protective layer R may be an organic material such as a resin, silicone, or acrylic material, but the embodiments of the present disclosure are not limited thereto.

[0143] In some examples, the thickness of the protective layer R ranges from 20 μm to 200 μm along the thickness direction Z of the substrate 10 , wherein the “thickness” of the protective layer R refers to the “average thickness” of the protective layer R.

[0144] When the thickness of the protective layer R is equal to or close to 20 μm in the direction Z of the thickness of the substrate 10 , the protective layer R can reduce the influence of the protective layer R on the light transmittance of the light-emitting substrate 100 , and can also enable the protective layer R to protect the light-emitting substrate 100 and improve the quality of the light-emitting substrate 100 .

[0145] When the thickness of the protective layer R is equal to or close to 200 μm along the thickness direction Z of the substrate 10 , the protective layer R can better protect the light-emitting substrate 100 and meet the light transmittance requirement of the light-emitting substrate 100 .

[0146] In some examples, along the thickness direction Z of the substrate 10 , the thickness of the protection layer R ranges from 50 μm to 100 μm.

[0147] As described above, the thickness of the protective layer R is neither too thick, thereby affecting the light transmittance of the light-emitting substrate 100, nor too thin, thereby failing to effectively provide shock absorption and scratch protection. Furthermore, a thickness of the protective layer 30 between 50 μm and 100 μm can improve both the optical effect and the quality of the light-emitting substrate 100.

[0148] For example, along the thickness direction Z of the substrate 10 , the thickness of the protective layer R is approximately 20 μm, 40 μm, 50 μm, 60 μm, 80 μm, or 100 μm. However, the present disclosure is not limited thereto.

[0149] The above describes the position of the heat dissipation layer 20 in the light emitting substrate 100 with reference to the relevant drawings. The following describes various parameters of the heat dissipation layer 20 with reference to the relevant drawings, such as the material, thickness, and width of the heat dissipation layer 20.

[0150] In some embodiments, as shown in FIG8 , the thermal conductivity of the heat dissipation layer 20 is greater than or equal to 100 W / (m*K).

[0151] When the thermal conductivity of the heat dissipation layer 20 is equal to or close to 100 W / (m*K), the thermal conductivity requirement of the heat dissipation layer 20 can be met, and the heat dissipation layer 20 can be used to dissipate heat from the light-emitting substrate 100 (light-emitting units P), thereby improving the heat dissipation performance of the light-emitting substrate 100. This prevents heat accumulation in each light-emitting unit P in the light-emitting substrate 100, which would affect the lifespan and uniformity of the light-emitting substrate 100.

[0152] Here, “thermal conductivity” refers to the amount of heat transferred per unit area in the heat dissipation layer 20 per unit time.

[0153] In some examples, the thermal conductivity of the heat dissipation layer 20 is greater than or equal to 200 W / (m*K).

[0154] When the thermal conductivity of the heat dissipation layer 20 is equal to or close to 200 W / (m*K), the thermal conductivity of the heat dissipation layer 20 is relatively high, which can make the heat dissipation layer 20 have better thermal conductivity, so as to better improve the heat dissipation performance of the light-emitting substrate 100 .

[0155] In some examples, the thermal conductivity of the heat dissipation layer 20 is greater than or equal to 400 W / (m*K).

[0156] When the thermal conductivity of the heat dissipation layer 20 is equal to or close to 400 W / (m*K), the thermal conductivity of the heat dissipation layer 20 is higher, which can make the heat dissipation layer 20 have better thermal conductivity, so as to better improve the heat dissipation performance of the light-emitting substrate 100.

[0157] For example, the thermal conductivity of the heat dissipation layer 20 is approximately 116 W / (m*K), 237 W / (m*K), 317 W / (m*K), 401 W / (m*K), or 429 W / (m*K). However, the embodiments of the present disclosure are not limited thereto.

[0158] Taking the thermal conductivity of the heat dissipation layer 20 as approximately 237 W / (m*K) as an example, the heat dissipation layer 20 can have better thermal conductivity, thereby improving the heat dissipation performance of the light-emitting substrate 100 .

[0159] It should be noted that due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error fluctuation range of the thermal conductivity of the heat dissipation layer 20 fluctuates within the range of 10%×237W / (m*K), it can also be considered that the thermal conductivity of the heat dissipation layer 20 satisfies and is equal to 237W / (m*K).

[0160] In addition, in other examples, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the thermal conductivity of the heat dissipation layer 20 fluctuates within the range of 5%×237W / (m*K), it can also be considered that the thermal conductivity of the heat dissipation layer 20 satisfies and is equal to 237W / (m*K).

[0161] In some embodiments, the heat dissipation layer 20 is made of metal or insulating thermally conductive material. Both metal and insulating thermally conductive materials can provide the heat dissipation layer 20 with good thermal conductivity, thereby improving the heat dissipation performance of the light-emitting substrate 100 .

[0162] In some examples, the heat dissipation layer 20 is made of a metal material. Exemplarily, the metal material includes any one of copper (Cu), aluminum (Al), titanium (Ti), nickel (Ni), gold (Au), zinc (Zn), tin (Sn), platinum (Pt), and molybdenum (Mo), or alloys thereof. However, the present disclosure is not limited thereto.

[0163] The thermal conductivity of the metal materials mentioned above is greater than 100 W / (m*K). Therefore, the heat dissipation layer 20 made of any of the metal materials or an alloy formed by combining multiple metal materials can have good thermal conductivity, thereby improving the heat dissipation performance of the light-emitting substrate 100. This prevents heat accumulation in the light-emitting devices O in the light-emitting substrate 100, which would affect the lifespan and uniformity of the light-emitting substrate 100.

[0164] In other examples, the heat dissipation layer 20 is made of an insulating thermally conductive material. The insulating thermally conductive material includes graphene or silicon carbide. However, the embodiments of the present disclosure are not limited thereto.

[0165] Since both graphene and silicon carbide have good thermal conductivity, the heat dissipation layer 20 made of graphene or silicon carbide can also have good thermal conductivity, thereby improving the heat dissipation performance of the light-emitting substrate 100. This prevents heat accumulation in each light-emitting device O in the light-emitting substrate 100, which would affect the lifespan and uniformity of the light-emitting substrate 100.

[0166] In some embodiments, as shown in FIG8 , along the thickness direction Z of the substrate 10 , the thickness of the heat dissipation layer 20 is less than or equal to the thickness of the light emitting unit P. Here, the “thickness” of the heat dissipation layer 20 is the “average thickness” of the heat dissipation layer 20 , and the “thickness” of the light emitting unit P is also the “average thickness” of the light emitting unit P.

[0167] When the thickness d1 of the heat dissipation layer 20 is equal to or close to the thickness of the light-emitting device O, the thickness of the heat dissipation layer 20 can be made thicker, thereby facilitating an increase in the heat dissipation area of ​​the heat dissipation layer 20, thereby enabling the heat dissipation layer 20 to have better thermal conductivity. The first heat dissipation structure 21 in the heat dissipation layer 20 absorbs heat emitted by the light-emitting device O in each light-emitting unit P, and the second heat dissipation structure 22 conducts the heat absorbed by the first heat dissipation structure to the non-display area of ​​the light-emitting substrate 100, thereby dissipating the heat and improving the heat dissipation performance of the light-emitting substrate 100. This prevents heat accumulation in the light-emitting device O in each light-emitting unit P of the light-emitting substrate 100, which would affect the lifespan and uniformity of the light-emitting substrate 100.

[0168] Moreover, the heat dissipation layer 20 will not be too thick to support the transfer substrate when the light-emitting substrate 100 transfers a large number of light-emitting units P, causing the light-emitting units P to be unable to align and connect with the binding electrodes on the substrate in the light-emitting substrate 100, which is beneficial to improving the quality of the light-emitting substrate 100.

[0169] In some examples, the minimum distance between the surface of the heat dissipation layer 20 away from the substrate 10 and the substrate 10 is less than or equal to the minimum distance between the surface of the light emitting unit P away from the substrate 10 and the substrate 10 .

[0170] Based on this, it can be ensured that the heat dissipation layer 20 does not protrude from the light-emitting unit P toward the side away from the substrate 10 , and further ensured that the heat dissipation layer 20 does not hinder the subsequent mass transfer of the light-emitting units P on the light-emitting substrate 100 , which is beneficial to improving the quality of the light-emitting substrate 100 .

[0171] It should be noted that the thickness direction Z of the substrate 10 can be approximately perpendicular to the row direction X. In this case, the angle between the row direction X and the thickness direction Z of the substrate 10 is approximately 90°. For example, the angle between the row direction X and the thickness direction Z of the substrate 10 can be 85°, 90°, or 95°.

[0172] Furthermore, the thickness direction Z of the substrate 10 and the column direction Y can be approximately perpendicular to each other. In this case, the angle between the column direction Y and the thickness direction Z of the substrate 10 is approximately 90°. For example, the angle between the column direction Y and the thickness direction Z of the substrate 10 can be 85°, 90°, or 95°.

[0173] That is, the thickness direction Z of the substrate 10 is approximately perpendicular to both the row direction X and the column direction Y.

[0174] In some embodiments, as shown in FIG. 8 , along the thickness direction Z of the substrate 10 , the thickness of the heat dissipation layer 20 ranges from 1 μm to 20 μm.

[0175] When the thickness of the heat dissipation layer 20 is equal to or close to 1 μm, it can prevent the heat dissipation layer 20 from being too thin, which could lead to problems that cannot be achieved with existing processes. Furthermore, the heat dissipation layer 20 can have sufficient heat dissipation area, resulting in better thermal conductivity. This improves the heat dissipation performance of the light-emitting substrate 100 and prevents heat accumulation in the individual light-emitting units P within the light-emitting substrate 100, which could affect the lifespan and uniformity of the light-emitting substrate 100.

[0176] When the thickness of the heat dissipation layer 20 is equal to or close to 20 μm, the heat dissipation layer 20 can be made thicker, thereby increasing the heat dissipation area of ​​the heat dissipation layer 20 and thus making the heat dissipation layer 20 have better thermal conductivity. This improves the heat dissipation performance of the light-emitting substrate 100 and prevents heat accumulation in each light-emitting unit P in the light-emitting substrate 100, which would affect the lifespan and uniformity of the light-emitting substrate 100.

[0177] Furthermore, since the thickness of the light-emitting unit P is generally less than or equal to 20 μm, this can also prevent the heat dissipation layer 20 from being too thick, thereby resisting the transfer substrate when a large number of light-emitting units P are transferred, resulting in the light-emitting units P being unable to be aligned and connected with the binding electrodes on the substrate in the light-emitting substrate 100, which is beneficial to improving the quality of the light-emitting substrate 100.

[0178] In some examples, along the thickness direction Z of the substrate 10 , the thickness of the heat dissipation layer 20 ranges from 5 μm to 15 μm.

[0179] When the thickness of the heat dissipation layer 20 is equal to or close to 5 μm, the heat dissipation layer 20 can meet the requirements of the difficulty of the manufacturing process, and can also have a sufficient heat dissipation area and good thermal conductivity.

[0180] When the thickness of the heat dissipation layer 20 is equal to or close to 15 μm, the heat dissipation layer 20 can have a larger heat dissipation area, thereby making the heat dissipation layer 20 have better thermal conductivity, and can also prevent the heat dissipation layer 20 from hindering the subsequent formation of the light-emitting unit P due to its own thickness, which is beneficial to improving the quality of the light-emitting substrate 100.

[0181] For example, along the thickness direction Z of the substrate 10 , the thickness of the heat dissipation layer 20 is approximately 1 μm, 5 μm, 8 μm, 10 μm, 12 μm, 15 μm, or 20 μm. However, the present disclosure is not limited thereto.

[0182] Taking the thickness of the heat dissipation layer 20 of about 12 μm along the thickness direction Z of the substrate 10 as an example, the heat dissipation layer 20 can have better thermal conductivity, thereby improving the heat dissipation performance of the light-emitting substrate 100 .

[0183] It should be noted that due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the thickness of the heat dissipation layer 20 fluctuates within the range of 10%×12μm, it can also be considered that the thickness of the heat dissipation layer 20 satisfies the requirement of being equal to 12μm.

[0184] In addition, in other examples, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the thickness of the heat dissipation layer 20 fluctuates within the range of 5%×12μm, it can also be considered that the thickness of the heat dissipation layer 20 satisfies the requirement of being equal to 12μm.

[0185] In some embodiments, as shown in FIG4 , the first minimum spacing between two adjacent light-emitting units P is D1, and the width W1 of the first heat dissipation structure 21 located between the two adjacent light-emitting units P ranges from 0.05D1 to 0.95D1. The width W1 of the first heat dissipation structure 21 can be understood as the minimum length of the first heat dissipation structure 21 in a direction from one of the two adjacent light-emitting units P to the other of the two adjacent light-emitting units P.

[0186] When the width W1 of the first heat dissipation structure 21 located between two adjacent light-emitting units P is equal to or close to 0.05D1, the width W1 of the first heat dissipation structure 21 is relatively small. When the first heat dissipation structure 21 is formed in the heat dissipation layer 20 within the space corresponding to the first minimum spacing D1, this can prevent the problem of short circuits between the first heat dissipation structure 21 and other conductive structures, such as the light-emitting devices O, in the light-emitting units P. Furthermore, this can also help to reduce the process accuracy of forming the heat dissipation layer 20 to a certain extent. Because the width W1 of the first heat dissipation structure 21 occupies a relatively small proportion of the space corresponding to the first minimum spacing D1, even with reduced process accuracy, this can prevent the problem of short circuits between the first heat dissipation structure 21 and other conductive structures, such as the light-emitting devices O, in the light-emitting units P. Furthermore, when the width W1 of the first heat dissipation structure 21 located between two adjacent light-emitting units P is equal to or close to 0.05D1, the heat dissipation area requirement of the first heat dissipation structure 21 can be met, ensuring the thermal conductivity of the first heat dissipation structure, allowing the first heat dissipation structure 21 to fully absorb the heat generated by the light-emitting devices O in the light-emitting units P.

[0187] When the width W1 of the first heat dissipation structure 21 located between two adjacent light-emitting units P is equal to or close to 0.95D1, the width W1 of the first heat dissipation structure 21 is larger, which can be beneficial to increasing the heat dissipation area of ​​the first heat dissipation structure 21, and can make the first heat dissipation structure 21 have better thermal conductivity, so that the first heat dissipation structure 21 can be used to better absorb the heat generated by the light-emitting device O in the light-emitting unit P, thereby improving the heat dissipation effect of the light-emitting substrate 100.

[0188] In some embodiments, as shown in FIG4 , the first minimum distance between two adjacent light emitting units P is D1 , and the width W1 of the first heat dissipation structure 21 between two adjacent light emitting units P ranges from 0.14D1 to 0.63D1 .

[0189] When the width W1 of the first heat dissipation structure 21 located between two adjacent light-emitting units P is equal to or close to 0.14D1, it can not only prevent the problem of short circuit between the first heat dissipation structure 21 and other conductive structures such as the light-emitting device O in the light-emitting unit P, but also meet the demand of the first heat dissipation structure 21 for the heat dissipation area, and ensure the thermal conductivity of the first heat dissipation structure, so that the first heat dissipation structure 21 can fully absorb the heat generated by the light-emitting device O in the light-emitting unit P.

[0190] When the width W1 of the first heat dissipation structure 21 located between two adjacent light-emitting units P is equal to or close to 0.63D1, the first heat dissipation structure 21 can have better thermal conductivity, so that the first heat dissipation structure 21 can be used to better absorb the heat generated by the light-emitting device O in the light-emitting unit P to improve the heat dissipation effect of the light-emitting substrate 100; and the problem of light short circuit between the first heat dissipation structure 21 and other conductive structures such as the light-emitting device O in the light-emitting unit P can be prevented.

[0191] Exemplarily, the width W1 of the first heat dissipation structure 21 between two adjacent light emitting units P is approximately equal to any one of 0.2D1, 0.3D1, 0.4D1, 0.5D1, 0.6D1, 0.7D1, 0.8D1 or 0.9D1. However, the embodiments of the present disclosure are not limited thereto.

[0192] Taking the width W1 of the first heat dissipation structure 21 located between two adjacent light-emitting units P as approximately 0.8D1 as an example, it can prevent the problem of short circuit between the first heat dissipation structure 21 and other conductive structures such as the light-emitting device O in the light-emitting unit P, and can meet the first heat dissipation structure 21's demand for heat dissipation area, thereby ensuring the thermal conductivity of the first heat dissipation structure.

[0193] It should be noted that due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the width W1 of the first heat dissipation structure 21 located between two adjacent light-emitting units P fluctuates within the range of 10%×0.8D1, it can also be considered that the width W1 of the first heat dissipation structure 21 satisfies and is equal to 0.8D1.

[0194] In addition, in other examples, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the width W1 of the first heat dissipation structure 21 located between two adjacent light-emitting units P fluctuates within the range of 5%×0.8D1, it can also be considered that the width W1 of the first heat dissipation structure 21 satisfies and is equal to 0.8D1.

[0195] In some embodiments, as shown in FIG. 4 , the first minimum distance D1 has a value ranging from 10 μm to 30 μm.

[0196] When the first minimum spacing D1 between two adjacent light-emitting units P is equal to or close to 10 μm, the first minimum spacing D1 can be made smaller, which can help increase the pixel density (PPI) of the display device 200 (light-emitting substrate 100), thereby improving the display effect of the display device 200. Furthermore, the requirement of providing the first heat dissipation structure 21 within the space corresponding to the first minimum spacing D1 can also be met.

[0197] When the first minimum spacing D1 between two adjacent light-emitting units P is equal to or close to 30 μm, the first minimum spacing D1 can be increased, thereby facilitating an increase in the width of the first heat dissipation structure 21 provided within the space corresponding to the first minimum spacing D1, thereby facilitating an increase in the heat dissipation area of ​​the first heat dissipation structure 21, thereby improving the heat dissipation effect of the light-emitting substrate 100. Furthermore, the pixel density PPI requirement of the display device 200 can be met, ensuring the display effect of the display device 200.

[0198] In some examples, the first minimum distance D1 has a value range of 15 μm to 25 μm.

[0199] When the first minimum spacing D1 between two adjacent light-emitting units P is equal to or close to 15 μm, it can not only help increase the pixel density PPI of the display device 200 (light-emitting substrate 100), but also meet the requirement of providing a first heat dissipation structure 21 in the space corresponding to the first minimum spacing D1.

[0200] When the first minimum spacing D1 between two adjacent light-emitting units P is equal to or close to 25 μm, it can not only increase the heat dissipation area of ​​the first heat dissipation structure 21 to improve the heat dissipation effect of the light-emitting substrate 100, but also meet the pixel density PPI requirements of the display device 200 and ensure the display effect of the display device 200.

[0201] For example, the first minimum distance D1 is approximately 12 μm, 15 μm, 18 μm, 19 μm, 20 μm, 23 μm, or 24 μm. However, the present disclosure is not limited thereto.

[0202] Taking the first minimum distance D1 of about 24 μm as an example, it is beneficial to improve the heat dissipation effect of the light-emitting substrate 100 and meet the pixel density PPI requirement of the display device 200 .

[0203] It should be noted that due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the first minimum spacing D1 fluctuates within the range of 10%×24μm, it can also be considered that the first minimum spacing D1 satisfies and is equal to 24μm.

[0204] In addition, in other examples, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the first minimum spacing D1 fluctuates within the range of 5%×24μm, it can also be considered that the first minimum spacing D1 satisfies and is equal to 24μm.

[0205] In some examples, the width W1 of the first heat dissipation structure 21 ranges from 3 μm to 14 μm.

[0206] When the width W1 of the first heat dissipation structure 21 is equal to or close to 3 μm, it can meet the requirements of the existing etching process and prevent the problem of residue generated when etching the first heat dissipation structure 21, which may cause a short circuit between the first heat dissipation structure 21 and the binding electrode 31. In addition, it can also meet the heat dissipation area requirement of the first heat dissipation structure 21, thereby facilitating heat dissipation of the light-emitting device O in the light-emitting substrate 100.

[0207] When the width W1 of the first heat dissipation structure 21 is equal to or close to 14 μm, it can not only increase the heat dissipation area of ​​the first heat dissipation structure 21 and improve the heat dissipation effect of the first heat dissipation structure 21, but also prevent the first heat dissipation structure 21 from being too large and causing a short circuit with the light-emitting device O.

[0208] In some examples, the width W1 of the first heat dissipation structure 21 ranges from 8 μm to 14 μm.

[0209] When the width W1 of the first heat dissipation structure 21 is within the range of 8 μm to 14 μm, it can meet the requirements of existing etching processes and prevent residue from being formed when etching the first heat dissipation structure 21, which could lead to a short circuit between the first heat dissipation structure 21 and the binding electrode 31. It can also meet the heat dissipation area requirement of the first heat dissipation structure 21, thereby facilitating heat dissipation of the light-emitting device O within the light-emitting substrate 100. At the same time, it can also prevent the first heat dissipation structure 21 from being too large, which could easily lead to a short circuit between the first heat dissipation structure 21 and the light-emitting device O.

[0210] Exemplarily, the width W1 of the first heat dissipation structure 21 is approximately 3 μm, 5 μm, 7 μm, 9 μm, 11 μm, or 13 μm. However, the disclosed embodiments are not limited thereto. For example, when the first minimum spacing D1 between two adjacent light-emitting units P is approximately 22 μm, the width W1 of the first heat dissipation structure 21 is approximately 9 μm.

[0211] Taking the width W1 of the first heat dissipation structure 21 as approximately 9 μm as an example, this can not only increase the heat dissipation area of ​​the first heat dissipation structure 21 and improve the heat dissipation effect of the first heat dissipation structure 21, but also prevent the first heat dissipation structure 21 from being too large and causing a short circuit with the light-emitting device O.

[0212] It should be noted that due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the width W1 of the first heat dissipation structure 21 fluctuates within the range of 10%×9μm, it can also be considered that the width W1 of the first heat dissipation structure 21 satisfies and is equal to 9μm.

[0213] In addition, in other examples, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the width W1 of the first heat dissipation structure 21 fluctuates within the range of 5%×9μm, it can also be considered that the width W1 of the first heat dissipation structure 21 satisfies and is equal to 9μm.

[0214] In some embodiments, as shown in FIG4 , a first gap J1 is provided between adjacent first heat dissipation structures 21 and light emitting units P. This arrangement is equivalent to reserving sufficient space between adjacent first heat dissipation structures 21 and light emitting units P to prevent the problem of short circuit between the first heat dissipation structure 21 and other conductive structures such as the light emitting device O in the light emitting unit P due to certain uncontrollable errors.

[0215] In some examples, the first gap J1 is greater than or equal to 0.025D1.

[0216] When the first gap J1 between adjacent first heat dissipation structures 21 and light-emitting units P is equal to or close to 0.025D1, the first gap J1 is relatively small, which can also reduce the space corresponding to the first gap from the space corresponding to the first minimum spacing D1. This can leave more space for the first heat dissipation structure 21, thereby increasing the heat dissipation area of ​​the first heat dissipation structure 21 and improving the thermal conductivity of the first heat dissipation structure. Furthermore, it can also prevent the first heat dissipation structure 21 from shorting with other conductive structures such as the light-emitting device O in the light-emitting unit P.

[0217] In other examples, the first gap J1 between adjacent first heat dissipation structures 21 and light-emitting units P may also be limited by the accuracy of existing process equipment other than nano-equipment. For example, the position accuracy of the exposure machine is ±1.5μm, and the critical dimension value of the etching process is ±1μm. Based on this, in some examples, the first gap J1 can be set to be greater than or equal to 2.5μm. However, the embodiments of the present disclosure are not limited to this. Under other nano-high-precision equipment, the size of the first gap can also be further reduced.

[0218] When the first gap J1 between adjacent first heat dissipation structures 21 and light-emitting units P is equal to or approaches 2.5 μm, the first gap J1 is relatively small, which can also reduce the space corresponding to the first gap from the space corresponding to the first minimum spacing D1. This can leave more space for the first heat dissipation structure 21, thereby increasing the heat dissipation area of ​​the first heat dissipation structure 21 and improving the thermal conductivity of the first heat dissipation structure. Furthermore, when the first gap J1 between adjacent first heat dissipation structures 21 and light-emitting units P is equal to or approaches 2.5 μm, sufficient space is reserved between the adjacent first heat dissipation structures 21 and light-emitting units P to prevent short circuits between the first heat dissipation structure 21 and other conductive structures, such as the light-emitting device O in the light-emitting unit P, due to certain uncontrollable errors.

[0219] In some examples, the first gap J1 is less than or equal to 0.47D1.

[0220] When the first gap J1 between adjacent first heat dissipation structures 21 and light-emitting units P is equal to or close to 0.47D1, the first gap J1 can be made larger, which is equivalent to reserving a larger space between the adjacent first heat dissipation structures 21 and the light-emitting units P. This prevents the problem of short circuit between the first heat dissipation structure 21 and other conductive structures such as the light-emitting device O in the light-emitting unit P due to certain uncontrollable errors. In addition, the heat dissipation area requirement of the first heat dissipation structure 21 can be met, and the thermal conductivity of the first heat dissipation structure can be guaranteed.

[0221] For example, the first gap J1 is approximately any one of 2.5 μm, 3 μm, 3.5 μm, 4 μm, 4.5 μm, or 5 μm. However, the present disclosure is not limited thereto.

[0222] For example, when the first minimum distance D1 between two adjacent light emitting units P is about 24 μm, the first gap J1 may be about 5 μm. Based on this, the width of the first heat dissipation structure 21 is about 14 μm.

[0223] Taking the first gap J1 of about 5 μm as an example, it can not only meet the requirement of setting the first heat dissipation structure 21, but also prevent the problem of short circuit between the first heat dissipation structure 21 and other conductive structures such as the light emitting device O in the light emitting unit P.

[0224] It should be noted that due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the first gap J1 fluctuates within the range of 10%×5μm, it can also be considered that the first gap J1 satisfies 5μm.

[0225] In addition, in other examples, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the first gap J1 fluctuates within the range of 5%×5μm, it can also be considered that the first gap J1 satisfies the requirement of being equal to 5μm.

[0226] The above describes the material, thickness, width and other parameters of the first heat dissipation structure 21 in the heat dissipation layer 20 in conjunction with the relevant drawings. The following describes how to set the first heat dissipation structure 21 for light-emitting devices of different colors in conjunction with the drawings.

[0227] Fig. 9 is a top view of a light-emitting substrate according to some further embodiments, and Fig. 10 is a top view of two first heat dissipation substructures in Fig. 9. Fig. 10 also schematically illustrates the light-emitting unit P in the first heat dissipation substructure 211.

[0228] 9 and 10 , the light emitting unit P may include light emitting devices O emitting light of different colors. The plurality of light emitting devices O may include a first color light emitting device and a second color light emitting device.

[0229] Based on this, the brightness (gray scale) of the light emitting devices O of different colors can be adjusted, and multiple colors can be displayed through color combination and superposition, thereby realizing full-color display of the display device 200.

[0230] The inventors have discovered that the luminous efficiency of the first-color light-emitting device is lower than that of the second-color light-emitting device. At a certain current density, the low luminous efficiency of the first-color light-emitting device can lead to a high heat generation rate, which can easily damage the first light-emitting device O1.

[0231] For example, the first color light-emitting device is a first light-emitting device O1 that emits red light. The second color light-emitting device includes a second light-emitting device O2 that emits green light and / or a third light-emitting device O3 that emits blue light. The luminous efficiency of the first light-emitting device O1 that emits red light is lower than the luminous efficiency of the second light-emitting device O2 that emits green light and the third light-emitting device O3 that emits blue light.

[0232] Based on this, in conjunction with Figures 9 and 10 , in the light-emitting substrate 100 provided in some embodiments of the present disclosure, the first heat dissipation structure 21 can be divided into multiple interconnected first heat dissipation substructures 211, with one first heat dissipation substructure 211 surrounding one light-emitting unit P. Since one light-emitting unit P includes multiple light-emitting devices O, one first heat dissipation substructure 211 is disposed around the multiple light-emitting devices O. No other heat dissipation structures are disposed between the multiple light-emitting devices O within one first heat dissipation substructure 211.

[0233] As shown in the above structure, the light-emitting substrate 100 is provided with a first heat dissipation substructure 211 corresponding to each light-emitting unit P. The first heat dissipation substructure 211 can be used to absorb the heat generated by multiple light-emitting devices O in the light-emitting unit P, so as to improve the heat dissipation effect of the light-emitting substrate 100.

[0234] Two adjacent first heat dissipation substructures 211 can be divided into a first first heat dissipation substructure 211A and a second first heat dissipation substructure 211B. The minimum distance between the interface I between the first first heat dissipation substructure 211A and the second first heat dissipation substructure 211B and the light-emitting unit P surrounded by the first first heat dissipation substructure 211A is equal to the minimum distance between the interface I between the first first heat dissipation substructure 211A and the second first heat dissipation substructure 211B and the light-emitting unit P surrounded by the second first heat dissipation substructure 211B.

[0235] That is, taking a light-emitting unit P as an example, the interface (dividing line) between the first heat dissipation substructure 211 corresponding to the light-emitting unit P and the first heat dissipation substructures 211 corresponding to multiple light-emitting units P adjacent to the light-emitting unit P can be arranged along the center line of the portion of the first heat dissipation structure 21 between the light-emitting unit P and its adjacent light-emitting unit P. The above-mentioned "center line" refers to the center line of the portion of the first heat dissipation structure 21 located between the two light-emitting units P in the direction from the light-emitting unit P to its adjacent light-emitting unit P.

[0236] In addition, it should be noted that the boundaries of the plurality of first heat dissipation substructures 211 located on the side of the display area AA close to the non-display area SA overlap with the boundary between the display area AA and the non-display area SA.

[0237] Based on this, the first heat dissipation substructure 211 can be divided into a first portion 21A and a second portion 21B, which are connected end to end. The first portion 21A is the first heat dissipation structure 21 disposed along the edge of the first color light-emitting device (first light-emitting device O1), and the second portion 21B is the first heat dissipation structure 21 disposed along the edge of a portion of the second color light-emitting device. In other words, the first portion 21A is disposed close to and surrounds the first color light-emitting device (first light-emitting device O1), while the second portion 21B is disposed close to and surrounds the second color light-emitting device.

[0238] As shown in the above structure, the minimum spacing between the first portion 21A and the first color light-emitting device (first light-emitting device O1) can be set to be less than or equal to the minimum spacing between the second portion 21B and the second color light-emitting device. The first heat dissipation structure 21 can be positioned closer to the first color light-emitting device (first light-emitting device O1) with higher heat generation than the second color light-emitting device with lower heat generation. In other words, by adjusting the structural dimensions at different locations of the first heat dissipation structure 21, the difference in heat generation among the different color light-emitting devices O can be balanced. This allows the first heat dissipation structure 21 to better absorb the heat generated by each light-emitting device O, thereby improving the heat dissipation efficiency of the light-emitting substrate 100.

[0239] In some examples, when the second color light-emitting device includes a second light-emitting device O2, that is, when a light-emitting unit P includes a first light-emitting device O1 and a second light-emitting device O2, the first heat dissipation substructure 211 surrounding the light-emitting unit P includes a first portion 21A corresponding to the first light-emitting device O1 and a second portion 21B corresponding to the second light-emitting device O2.

[0240] A minimum distance between the first portion 21A and the first light emitting device O1 may be set to be smaller than or equal to a minimum distance between the second portion 21B and the second light emitting device O2 .

[0241] In other examples, when the second color light-emitting device includes a third light-emitting device O3, that is, when a light-emitting unit P includes a first light-emitting device O1 and a third light-emitting device O3, the first heat dissipation substructure 211 surrounding the light-emitting unit P includes a first portion 21A corresponding to the first light-emitting device O1 and a second portion 21B corresponding to the third light-emitting device O3.

[0242] A minimum distance between the first portion 21A and the first light emitting device O1 may be set to be smaller than or equal to a minimum distance between the second portion 21B and the third light emitting device O3 .

[0243] In some other examples, when the second color light-emitting device includes a second light-emitting device O2 and a third light-emitting device O3, that is, when a light-emitting unit P includes a first light-emitting device O1, a second light-emitting device O2 and a third light-emitting device O3, the first heat dissipation substructure 211 surrounding the light-emitting unit P includes a first part 21A corresponding to the first light-emitting device O1, and a second part 21B corresponding to the second light-emitting device O2 and the third light-emitting device O3.

[0244] The minimum distance between the first portion 21A and the first light-emitting device O1 can be set to be less than or equal to the minimum distance between the second portion 21B and the second light-emitting device O2. The minimum distance between the first portion 21A and the first light-emitting device O1 can also be set to be less than or equal to the minimum distance between the second portion 21B and the third light-emitting device O3. The minimum distance between the first portion 21A and the first light-emitting device O1 can also be set to be less than or equal to the minimum distance between the second portion 21B and the second light-emitting device O2 and the third light-emitting device O3.

[0245] Regardless of any of the above-mentioned light-emitting units P, the heat generated by the first light-emitting device O1 is higher than the heat generated by the second light-emitting device O2 and the third light-emitting device O3. Furthermore, the first portion 21A of the first heat dissipation substructure 211 disposed around the light-emitting unit P is closer to the first light-emitting device O1, which generates a higher amount of heat. This allows the first portion 21A of the first heat dissipation substructure 211 to better absorb the heat generated by the first light-emitting device O1, thereby preventing the first light-emitting device O1 from being damaged due to excessive heat.

[0246] Furthermore, the minimum spacing between the second portion 21B of the first heat dissipation substructure 211 and the second light-emitting device O2 and the third light-emitting device O3 is also within a reasonable range, allowing the second portion 21B of the first heat dissipation substructure 211 to simultaneously absorb the heat generated by the second light-emitting device O2 and the third light-emitting device O3. This can further improve the heat dissipation performance of the light-emitting substrate 100.

[0247] In some examples, when a light-emitting unit P includes a first light-emitting device O1, a second light-emitting device O2, and a third light-emitting device O, the second portion 21B of the first heat dissipation substructure 211 includes a first sub-portion surrounding the second light-emitting device O2 and a second sub-portion surrounding the third light-emitting device O.

[0248] The minimum distance between the first sub-section and the second light-emitting device O2 can be set to be equal to the minimum distance between the second sub-section and the third light-emitting device O. When forming the second portion 21B of the first heat dissipation substructure 211, it can be formed through a single patterning process, which helps to simplify the process of the light-emitting substrate 100.

[0249] The minimum spacing between the first sub-section and the second light-emitting device O2 and the minimum spacing between the second sub-section and the third light-emitting device O can also be set to be different. The minimum spacing between the first sub-section and the second sub-section and their corresponding light-emitting devices O can be adjusted according to the heat generated by the second light-emitting device O2 and the third light-emitting device O, so as to utilize the different sizes of different sub-sections of the second part 21B of the first heat dissipation substructure 211 to balance the problem of different heat generation of different light-emitting devices O, so as to better absorb the heat generated by each light-emitting device O and better improve the heat dissipation effect of the light-emitting substrate 100.

[0250] In the above embodiment, the minimum spacing between the first heat dissipation structure 21 and each light-emitting device O is adjusted to balance the different amounts of heat generated by different light-emitting devices O. The following describes, with reference to the relevant figures, how to balance the different amounts of heat generated by different light-emitting devices O by adjusting the width and thickness of the first heat dissipation structure 21 at different locations.

[0251] In some embodiments, referring to FIG9 and FIG10 , the width of the first portion 21A of the first heat dissipation substructure 211 can be set to be greater than or equal to the width of the second portion 21B of the first heat dissipation substructure 211. The width of the first portion 21A of the first heat dissipation substructure 211 and the width of the second portion 21B of the first heat dissipation substructure 211 can be understood as the minimum length of the first portion 21A of the first heat dissipation substructure 211 and the minimum length of the second portion 21B of the first heat dissipation substructure 211 along a direction parallel to the substrate and perpendicular to the direction surrounding the first heat dissipation substructure 211.

[0252] This configuration allows the width of the first portion 21A of the first heat dissipation structure 21, which faces the first color light-emitting device (first light-emitting device O1) with higher heat generation, to be wider than the width of the second portion 21B of the first heat dissipation structure 21, which faces the second color light-emitting device with lower heat generation. In other words, by adjusting the width at different locations of the first heat dissipation structure 21, the heat dissipation performance at different locations of the first heat dissipation structure 21 can be adjusted, thereby balancing the different heat generation of the different color light-emitting devices O. This allows the first heat dissipation structure 21 to better absorb the heat generated by each light-emitting device O, thereby improving the heat dissipation effect of the light-emitting substrate 100.

[0253] FIG11 is a cross-sectional view taken along line EE′ in FIG6 .

[0254] In some embodiments, as shown in FIG. 11 , the thickness of the first portion 21A of the first heat dissipation substructure 211 may be set to be greater than or equal to the thickness of the second portion 21B of the first heat dissipation substructure 211 .

[0255] In this configuration, since the heat generated by the first color light-emitting device (first light-emitting device O1) is higher than the heat generated by the second light-emitting device O2 and the third light-emitting device O3, the thickness of the first portion 21A of the first heat dissipation substructure 211 adjacent to the first light-emitting device O1, which generates higher heat, can be set to be thicker. This allows the first portion 21A of the first heat dissipation substructure 211 to better absorb the heat generated by the first light-emitting device O1, thereby preventing the first light-emitting device O1 from being damaged due to excessive heat.

[0256] That is, by adjusting the thickness at different locations of the first heat dissipation structure 21, the heat dissipation performance at different locations of the first heat dissipation structure 21 can be adjusted to balance the different heat generated by the light-emitting devices O of different colors. This allows the first heat dissipation structure 21 to better absorb the heat generated by each light-emitting device O, thereby improving the heat dissipation effect of the light-emitting substrate 100.

[0257] In some examples, when the second color light-emitting device includes a second light-emitting device O2, that is, when a light-emitting unit P includes a first light-emitting device O1 and a second light-emitting device O2, the first heat dissipation substructure 211 surrounding the light-emitting unit P includes a first portion 21A corresponding to the first light-emitting device O1 and a second portion 21B corresponding to the second light-emitting device O2.

[0258] In other examples, when the second color light-emitting device includes a third light-emitting device O3, that is, when a light-emitting unit P includes a first light-emitting device O1 and a third light-emitting device O3, the first heat dissipation substructure 211 surrounding the light-emitting unit P includes a first portion 21A corresponding to the first light-emitting device O1 and a second portion 21B corresponding to the third light-emitting device O3.

[0259] In some other examples, when the second color light-emitting device includes a second light-emitting device O2 and a third light-emitting device O3, that is, when a light-emitting unit P includes a first light-emitting device O1, a second light-emitting device O2 and a third light-emitting device O3, the first heat dissipation substructure 211 surrounding the light-emitting unit P includes a first part 21A corresponding to the first light-emitting device O1, and a second part 21B corresponding to the second light-emitting device O2 and the third light-emitting device O3.

[0260] Regardless of any of the above-mentioned light-emitting units P, the width of the first portion 21A of the first heat dissipation substructure 211 can be set to be greater than or equal to the width of the second portion 21B of the first heat dissipation substructure 211. And / or, regardless of any of the above-mentioned light-emitting units P, the thickness of the first portion 21A of the first heat dissipation substructure 211 can be set to be greater than or equal to the thickness of the second portion 21B of the first heat dissipation substructure 211.

[0261] Since the heat generated by the first light-emitting device O1 is higher than the heat generated by the second light-emitting device O2 and the third light-emitting device O3, the width and / or thickness of the first portion 21A of the first heat dissipation substructure 211 adjacent to the first light-emitting device O1 with higher heat generation can be adjusted so that the first portion 21A of the first heat dissipation substructure 211 can better absorb the heat generated by the first light-emitting device O1, thereby preventing the first light-emitting device O1 from being damaged due to excessive heat generation.

[0262] In addition, the width and / or thickness of the second portion 21B of the first heat dissipation structure 21, which is disposed adjacent to the second light-emitting device O2 and the third light-emitting device O3, also falls within a reasonable range, so that the second portion 21B of the first heat dissipation structure 21 can simultaneously absorb the heat generated by the light-emitting device O in the second light-emitting device O2 and the third light-emitting device O3. This can further improve the heat dissipation performance of the light-emitting substrate 100.

[0263] In some examples, when a light-emitting unit P includes a first light-emitting device O1, a second light-emitting device O2, and a third light-emitting device O, the second portion 21B of the first heat dissipation substructure 211 includes a first sub-portion surrounding the second light-emitting device O2 and a second sub-portion surrounding the third light-emitting device O.

[0264] The width of the first sub-portion can be set equal to the width of the second sub-portion, that is, the widths of the second portion 21B of the first heat dissipation substructure 211 are equal. When forming the second portion 21B of the first heat dissipation substructure 211, it can be formed through a single patterning process, which helps to simplify the process of the light-emitting substrate 100.

[0265] The width of the first sub-section and the width of the second sub-section can also be set to be different, and the width of the first sub-section and the width of the second sub-section can be adjusted according to the heat generated by the second light-emitting device O2 and the third light-emitting device O, so as to utilize the different widths of different sub-sections of the second part 21B of the first heat dissipation substructure 211 to balance the problem of different heat generated by different light-emitting devices O, so as to better absorb the heat generated by each light-emitting device O and better improve the heat dissipation effect of the light-emitting substrate 100.

[0266] In addition, it should be noted that the multiple first heat dissipation substructures 211 located on the side of the display area AA near the non-display area SA. The boundary of this portion of the first heat dissipation substructures 211 on the side near the non-display area SA coincides with the boundary between the display area AA and the non-display area SA. The minimum spacing between the boundary of this portion of the first heat dissipation substructure 211 on the side near the non-display area SA and the light-emitting unit P it surrounds is consistent with the minimum spacing between other first heat dissipation substructures 211 located on the side of the display area AA and the non-display area SA and the light-emitting unit P it surrounds. This can be set with reference to the minimum spacing between the first heat dissipation substructure 211 in the center of the display area AA and the light-emitting unit P it surrounds.

[0267] The first heat dissipation substructure 211 located on the side of the display area AA close to the non-display area SA can be understood as no other first heat dissipation substructure 211 being provided between the first heat dissipation substructure 211 and the non-display area SA. The first heat dissipation substructure 211 located on the side of the display area AA close to the non-display area SA can be understood as at least one first heat dissipation substructure 211 being provided between the first heat dissipation substructure 211 and the non-display area SA.

[0268] In some examples, the thickness of the first sub-portion can be set equal to the thickness of the second sub-portion, that is, the thickness of the second portion 21B of the first heat dissipation substructure 211 is equal. When forming the second portion 21B of the first heat dissipation substructure 211, it can be formed through a single patterning process, which helps to simplify the process of the light-emitting substrate 100.

[0269] The thickness of the first sub-section and the thickness of the second sub-section can also be set to be different, and the thickness of the first sub-section and the thickness of the second sub-section can be adjusted according to the heat generated by the second light-emitting device O2 and the third light-emitting device O, so as to utilize the different thicknesses of different sub-sections of the second part 21B of the first heat dissipation substructure 211 to balance the problem of different heat generated by different light-emitting devices O, so as to better absorb the heat generated by each light-emitting device O and better improve the heat dissipation effect of the light-emitting substrate 100.

[0270] In summary, the minimum distance between the first heat dissipation substructure 211 in the light-emitting substrate 100 and the light-emitting units P it surrounds, as well as at least one of the thickness and width of the first heat dissipation substructure 211, can be adjusted so that the second heat dissipation substructure 212 can perform heat dissipation treatment for the light-emitting units P that generate different amounts of heat, thereby improving the heat dissipation effect of the light-emitting substrate 100.

[0271] Figure 12 is a top view of a light emitting substrate according to some other embodiments. Figure 12 illustrates an example in which a light emitting unit P includes multiple light emitting devices O. In order to illustrate the structure of the first heat dissipation structure 21, Figure 12 does not illustrate the second heat dissipation structure.

[0272] The inventors have discovered that the luminous efficiency of the first color light-emitting device is low, which not only makes the first color light-emitting device mentioned above more susceptible to damage and other problems; it also causes the luminous brightness of the first color light-emitting device to be lower than the luminous brightness of the second color light-emitting device, thereby causing the light-emitting substrate 100 to have a color deviation problem.

[0273] Based on this, as shown in Figure 12, the low luminous efficiency and brightness of the first light-emitting device O1 can be improved by increasing its size. Specifically, the first light-emitting device O1 is larger than the second light-emitting device O2; and / or the first light-emitting device O1 is larger than the third light-emitting device O3. However, increasing the size of the first light-emitting device O1 directly results in increased heat generation and increased susceptibility to damage.

[0274] Based on this, on the basis of increasing the size of the first light-emitting device O1, by adjusting at least one of the three parameters of the width and thickness of the first heat dissipation structure 21 adjacent to the first light-emitting device O, and the minimum distance between the heat dissipation structure 21 and the first light-emitting device O, the first heat dissipation structure 21 can be used to better absorb the heat generated by the light-emitting device O in the first light-emitting device O1, so as to prevent the first light-emitting device O1 from being overheated and causing damage to the light-emitting device O inside it.

[0275] As for how to adjust at least one of the width and thickness of the first heat dissipation structure 21 adjacent to the first light-emitting device O, and the minimum distance between the heat dissipation structure 21 and the first light-emitting device O, it can be combined with the above-mentioned corresponding embodiments and will not be repeated here.

[0276] FIG13 is a top view of a light emitting substrate according to yet other embodiments.

[0277] In some embodiments, as shown in FIG13 , the plurality of light-emitting units P include a first light-emitting unit P1, a second light-emitting unit P2, and a third light-emitting unit P3. The light-emitting devices O in the first light-emitting unit P1, the second light-emitting unit P2, and the third light-emitting unit P3 emit different colors of light. For example, the first light-emitting unit P1 includes a first light-emitting device O1, the second light-emitting unit P2 includes a second light-emitting device O2, and the third light-emitting unit P3 includes a third light-emitting device O.

[0278] Based on this, the brightness (grayscale) of light-emitting units P (light-emitting devices O) of different colors can be adjusted, and multiple colors can be displayed through color combination and superposition, thereby realizing full-color display of the display device 200.

[0279] The inventors discovered that the luminous efficiency of the first light-emitting unit P1 (first light-emitting device O1) is lower than that of the second light-emitting unit P2 (second light-emitting device O2) and the third light-emitting unit P3 (third light-emitting device O3). The lower luminous efficiency of the first light-emitting unit P1 (first light-emitting device O1) results in a higher amount of heat generated by the first light-emitting unit P1 (first light-emitting device O1), which in turn can easily damage the first light-emitting unit P1 (first light-emitting device O1).

[0280] For example, the first light-emitting device O1 in the first light-emitting unit P1 emits red light, the second light-emitting device O2 in the second light-emitting unit P2 emits green light, and the third light-emitting device O3 in the third light-emitting unit P3 emits blue light. The luminous efficiency of the first light-emitting device O1 emitting red light is lower than the luminous efficiency of the second light-emitting device O2 emitting green light and the third light-emitting device O3 emitting blue light.

[0281] Based on this, as shown in FIG13 , in the light-emitting substrate 100 provided in some embodiments of the present disclosure, the first heat dissipation structure 21 can be divided into multiple interconnected second heat dissipation substructures 212 . One second heat dissipation substructure 212 surrounds one light-emitting unit P. Since one light-emitting unit P contains a light-emitting device O, one second heat dissipation substructure 212 is disposed circumferentially around one light-emitting device O.

[0282] The minimum distance between the interface U between two adjacent second heat dissipation substructures 212 and the light-emitting unit P surrounded by one of the two adjacent second heat dissipation substructures 212 is equal to the minimum distance between the interface U between two adjacent second heat dissipation substructures 212 and the light-emitting unit P surrounded by one of the two adjacent second heat dissipation substructures 212.

[0283] That is, taking a light-emitting unit P as an example, the interface (dividing line) between the second heat dissipation substructure 212 corresponding to the light-emitting unit P and the second heat dissipation substructures 212 corresponding to multiple light-emitting units P adjacent to the light-emitting unit P can be arranged along the center line of the portion of the first heat dissipation structure 21 between the light-emitting unit P and its adjacent light-emitting unit P. The above-mentioned "center line" refers to the center line of the portion of the first heat dissipation structure 21 located between the two light-emitting units P in the direction from the light-emitting unit P to its adjacent light-emitting unit P.

[0284] In addition, it should be noted that the boundaries of the plurality of second heat dissipation substructures 212 located on the side of the display area AA close to the non-display area SA overlap with the boundary between the display area AA and the non-display area SA.

[0285] Based on this, the difference from the first heat dissipation substructure 211 in the light-emitting substrate 100 shown in FIG9 is that the second heat dissipation substructure 212 is only provided around one light-emitting device O. In other words, a second heat dissipation substructure 212 can be provided for each light-emitting device O in the light-emitting substrate 100. Compared with the first heat dissipation substructure 211 shown in FIG9 , the size of the first heat dissipation structure 21 can be increased, thereby improving the heat dissipation effect of the first heat dissipation structure 21.

[0286] The plurality of second heat dissipation substructures 212 may include a first type of second heat dissipation substructure 212A, a second type of second heat dissipation substructure 212B, and a third type of second heat dissipation substructure 212C. The first type of second heat dissipation substructure 212A is circumferentially arranged around the first light-emitting device O1 (first light-emitting unit P1), the second type of second heat dissipation substructure 212B is circumferentially arranged around the second light-emitting device O2 (second light-emitting unit P2), and the third type of second heat dissipation substructure 212C is circumferentially arranged around the third light-emitting device O3 (third light-emitting unit P3).

[0287] The minimum distance between the first type of second heat dissipation substructure 212A and the first light-emitting unit P1 can be set to be less than or equal to the minimum distance between the second type of second heat dissipation substructure 212B and the second light-emitting unit P2; and / or, the minimum distance between the first type of second heat dissipation substructure 212A and the first light-emitting unit P1 can be set to be less than or equal to the minimum distance between the third type of second heat dissipation substructure 212C and the third light-emitting unit P3.

[0288] This arrangement allows the first heat dissipation structure 21 to be closer to the first light-emitting unit P1, which generates more heat, than the second and third light-emitting units P2 and P3, which generate less heat. By adjusting the structural dimensions of the second heat dissipation substructures 212 at different locations on the first heat dissipation structure 21, the varying heat generated by different light-emitting units P can be balanced. This allows the first heat dissipation structure 21 to better absorb the heat generated by each light-emitting unit P, improving the heat dissipation efficiency of the light-emitting substrate 100.

[0289] The minimum distances between the first second heat dissipation substructure 212A, the second second heat dissipation substructure 212B and the third second heat dissipation substructure 212C and the light emitting devices O they surround may include the following three situations:

[0290] The first type: the minimum distance between the first type second heat dissipation substructure 212A and the first light emitting unit P1 can be set to be less than or equal to the minimum distance between the second type second heat dissipation substructure 212B and the second light emitting unit P2.

[0291] Because the heat generated by the first light-emitting unit P1 is higher than that generated by the second light-emitting unit P2, the opening K of the first type second heat dissipation substructure 212A can be made smaller than the opening K of the second type second heat dissipation substructure 212B, thereby reducing the minimum distance between the first type second heat dissipation substructure 212A and the first light-emitting unit P1, which generates more heat. This allows the first type second heat dissipation substructure 212A to better absorb the heat generated by the first light-emitting unit P1, preventing damage to the first light-emitting unit P1 caused by excessive heat. Furthermore, the minimum distance between the second type second heat dissipation substructure 212B and the second light-emitting unit P2 is also within a reasonable range, allowing the second type second heat dissipation substructure 212B to simultaneously absorb the heat generated by the second light-emitting unit P2. This can further improve the heat dissipation performance of the light-emitting substrate 100.

[0292] Second: the minimum distance between the first type second heat dissipation substructure 212A and the first light emitting unit P1 can be set to be less than or equal to the minimum distance between the third type second heat dissipation substructure 212C and the third light emitting unit P3.

[0293] Because the heat generated by the first light-emitting unit P1 is higher than the heat generated by the third light-emitting unit P3, the opening K of the first-type second heat dissipation substructure 212A can be made smaller than the opening K of the third-type second heat dissipation substructure 212C, thereby reducing the minimum distance between the first-type second heat dissipation substructure 212A and the first light-emitting unit P1, which generates more heat. This allows the first-type second heat dissipation substructure 212A to better absorb the heat generated by the first light-emitting unit P1, preventing damage to the first light-emitting unit P1 caused by excessive heat. Furthermore, the minimum distance between the third-type second heat dissipation substructure 212C and the third light-emitting unit P3 is also within a reasonable range, allowing the third-type second heat dissipation substructure 212C to simultaneously absorb the heat generated by the third light-emitting unit P3. This can further improve the heat dissipation performance of the light-emitting substrate 100.

[0294] The third type: The minimum distance between the first type second heat dissipation substructure 212A and the first light-emitting unit P1 can be set to be less than or equal to the minimum distance between the second type second heat dissipation substructure 212B and the second light-emitting unit P2. Furthermore, the minimum distance between the first type second heat dissipation substructure 212A and the first light-emitting unit P1 can be less than or equal to the minimum distance between the third type second heat dissipation substructure 212C and the third light-emitting unit P3.

[0295] Since the heat generated by the first light-emitting unit P1 is higher than the heat generated by the second light-emitting unit P2 and the third light-emitting unit P3, the first second heat dissipation substructure 212A can be arranged closer to the first light-emitting unit P1, which has a higher heat output, so that the first second heat dissipation substructure 212A can better absorb the heat generated by the first light-emitting unit P1, thereby preventing the first light-emitting unit P1 from being damaged due to excessive heat.

[0296] In addition, the minimum spacing between the second type of second heat dissipation substructure 212B and the second light emitting unit P2, and the minimum spacing between the third type of second heat dissipation substructure 212C and the third light emitting unit P3, are also within a reasonable range, so that the first type of second heat dissipation substructure 212A, the second type of second heat dissipation substructure 212B, and the third type of second heat dissipation substructure 212C can absorb the heat generated by the light emitting units P respectively surrounded by them, thereby improving the heat dissipation performance of the light emitting substrate 100.

[0297] In the above embodiment, the minimum spacing between the first heat dissipation structure 21 and each light-emitting unit P is adjusted to balance the different amounts of heat generated by different light-emitting units P. The following describes, with reference to the relevant figures, how to balance the different amounts of heat generated by different light-emitting units P by adjusting the width of the first heat dissipation structure 21 at different locations.

[0298] In some embodiments, as shown in FIG13 , the width of the first type of second heat dissipation substructure 212A can be set to be greater than or equal to the width of the second type of second heat dissipation substructure 212B; and / or, the width of the first type of second heat dissipation substructure 212A can be set to be greater than or equal to the width of the third type of second heat dissipation substructure 212C.

[0299] The width of each of the second heat dissipation substructures 212 may be understood as the minimum length of the second heat dissipation substructure 212 along a direction parallel to the substrate and perpendicular to the direction surrounding the corresponding second heat dissipation substructure 212 .

[0300] This arrangement allows the width of the first type of second heat dissipation substructure 212A, which is arranged around the first light-emitting unit P1, which generates higher amounts of heat, to be wider than the width of the second heat dissipation substructure 212 surrounding other light-emitting units P. By adjusting the width at different locations of the first heat dissipation structure 21, the heat dissipation performance of the first heat dissipation structure 21 can be adjusted at different locations, thereby balancing the varying amounts of heat generated by different light-emitting units P. This allows the first heat dissipation structure 21 to better absorb the heat generated by each light-emitting unit P, thereby improving the heat dissipation effect of the light-emitting substrate 100.

[0301] In some examples, the width of the first type of second heat dissipation substructure 212A may be set to be greater than or equal to the width of the second type of second heat dissipation substructure 212B.

[0302] This arrangement allows the width of the first-type second heat dissipation substructure 212A, which surrounds the first light-emitting unit P1 (which generates higher heat), to be larger than the width of the second-type second heat dissipation substructure 212B, which surrounds the second light-emitting unit P2 (which generates lower heat). This allows the first-type second heat dissipation substructure 212A, with its larger heat dissipation area, to absorb more heat, allowing it to better absorb the heat generated by the first light-emitting unit P1 (first light-emitting device O1), preventing damage caused by excessive heat.

[0303] In some other examples, the width of the first type of second heat dissipation substructure 212A may be set to be greater than or equal to the width of the third type of second heat dissipation substructure 212C.

[0304] This arrangement allows the width of the first-type second heat dissipation substructure 212A, which is arranged around the first light-emitting unit P1 (which generates a relatively high amount of heat), to be larger than the width of the third-type second heat dissipation substructure 212C, which is arranged around the third light-emitting unit P3 (which generates a relatively low amount of heat). This allows the first-type second heat dissipation substructure 212A, with its larger heat dissipation area, to absorb more heat, allowing it to better absorb the heat generated by the first light-emitting unit P1 (first light-emitting device O1), thereby preventing damage caused by excessive heat.

[0305] In some other examples, the width of the first type of second heat dissipation substructure 212A may be greater than or equal to the width of the second type of second heat dissipation substructure 212B, and the width of the first type of second heat dissipation substructure 212A may be greater than or equal to the width of the third type of second heat dissipation substructure 212C.

[0306] This arrangement allows the width of the first type of second heat dissipation substructure 212A, which is arranged around the first light-emitting unit P1, which generates relatively high amounts of heat, to be increased, thereby increasing the heat dissipation area of ​​the first type of second heat dissipation substructure 212A relative to the second type of second heat dissipation substructure 212B and the third type of second heat dissipation substructure 212C. Furthermore, the first type of second heat dissipation substructure 212A can be used to better absorb the heat generated by the first light-emitting unit P1 (first light-emitting device O1), preventing damage caused by excessive heat.

[0307] In some examples, the width of the second type second heat dissipation substructure 212B can be set equal to the width of the third type second heat dissipation substructure 212C. Based on this, the structure of the first heat dissipation structure 21 can be simplified, which is conducive to simplifying the manufacturing process of the light-emitting substrate 100.

[0308] The width of the second type of second heat dissipation substructure 212B and the width of the third type of second heat dissipation substructure 212C can also be set to be different. The width of the second heat dissipation substructure 212 can be adjusted accordingly according to the heat generated by the second light-emitting unit P2 and the third light-emitting unit P, so as to use different widths to balance the problem of different heat generation of different light-emitting units P, so as to better absorb the heat generated by each light-emitting unit P and better improve the heat dissipation effect of the light-emitting substrate 100.

[0309] In addition, it should be noted that the multiple second heat dissipation substructures 212 located on the side of the display area AA near the non-display area SA. The boundary of this portion of the second heat dissipation substructures 212 on the side near the non-display area SA coincides with the boundary between the display area AA and the non-display area SA. The minimum spacing between the boundary of this portion of the second heat dissipation substructure 212 on the side near the non-display area SA and the light-emitting unit P it surrounds is consistent with the minimum spacing between other second heat dissipation substructures 212 located on the side of the display area AA and the non-display area SA and the light-emitting unit P it surrounds. This can be set with reference to the minimum spacing between the second heat dissipation substructure 212 in the center of the display area AA and the light-emitting unit P it surrounds.

[0310] The second heat dissipation substructure 212 located on the side of the display area AA close to the non-display area SA can be understood as having no other second heat dissipation substructure 212 between the second heat dissipation substructure 212 and the non-display area SA. The second heat dissipation substructure 212 located on the side of the display area AA close to the non-display area SA can be understood as having at least one second heat dissipation substructure 212 between the second heat dissipation substructure 212 and the non-display area SA.

[0311] In the above embodiment, the width of the first heat dissipation structure 21 at different positions is adjusted to balance the different heat generated by different light-emitting units P. The following will introduce, in conjunction with relevant drawings, the problem of balancing the different heat generated by different light-emitting units P by adjusting the thickness of the first heat dissipation structure 21 at different positions.

[0312] FIG14 is a cross-sectional view taken along the line CC' in FIG4 .

[0313] In some embodiments, as shown in FIG14 , the thickness of the first type of second heat dissipation substructure 212A can be set to be greater than or equal to the thickness of the second type of second heat dissipation substructure 212B; and / or, the thickness of the first type of second heat dissipation substructure 212A can be set to be greater than or equal to the thickness of the third type of second heat dissipation substructure 212C.

[0314] This configuration allows the thickness of the first type of second heat dissipation substructure 212A, which is arranged around the first light-emitting unit P1, which generates higher amounts of heat, to be thicker than the thickness of the second heat dissipation substructure 212 surrounding other light-emitting units P. By adjusting the thickness at different locations of the first heat dissipation structure 21, the heat dissipation performance at different locations of the first heat dissipation structure 21 can be adjusted, thereby balancing the varying amounts of heat generated by different light-emitting units P. This allows the first heat dissipation structure 21 to better absorb the heat generated by each light-emitting unit P, thereby improving the heat dissipation effect of the light-emitting substrate 100.

[0315] In some examples, the thickness of the first type of second heat dissipation substructure 212A may be set to be greater than or equal to the thickness of the second type of second heat dissipation substructure 212B.

[0316] This arrangement allows the thickness of the first-type second heat dissipation substructure 212A, positioned around the first light-emitting unit P1 (which generates higher heat), to be thicker than the second-type second heat dissipation substructure 212B, positioned around the second light-emitting unit P2 (which generates lower heat). This allows the first-type second heat dissipation substructure 212A, with its larger heat dissipation area, to absorb more heat, allowing it to better absorb the heat generated by the first light-emitting unit P1 (first light-emitting device O1), preventing damage and other problems caused by excessive heat.

[0317] In some other examples, the thickness of the first type of second heat dissipation substructure 212A may be set to be greater than or equal to the thickness of the third type of second heat dissipation substructure 212C.

[0318] This arrangement allows the thickness of the first-type second heat dissipation substructure 212A, disposed around the first light-emitting unit P1 (which generates a relatively high amount of heat), to be greater than the thickness of the third-type second heat dissipation substructure 212C, disposed around the third light-emitting unit P3 (which generates a relatively low amount of heat). This allows the first-type second heat dissipation substructure 212A, with its larger heat dissipation area, to absorb more heat, allowing it to better absorb the heat generated by the first light-emitting unit P1 (first light-emitting device O1), thereby preventing damage and other problems caused by excessive heat.

[0319] In some other examples, the thickness of the first type of second heat dissipation substructure 212A may be greater than or equal to the thickness of the second type of second heat dissipation substructure 212B, and the thickness of the first type of second heat dissipation substructure 212A may be greater than or equal to the thickness of the third type of second heat dissipation substructure 212C.

[0320] This arrangement allows the thickness of the first type of second heat dissipation substructure 212A, which is arranged around the first light-emitting unit P1, which generates relatively high amounts of heat, to be increased, thereby increasing the heat dissipation area of ​​the first type of second heat dissipation substructure 212A relative to the second type of second heat dissipation substructure 212B and the third type of second heat dissipation substructure 212C. Furthermore, the first type of second heat dissipation substructure 212A can be used to better absorb the heat generated by the first light-emitting unit P1 (first light-emitting device O1), preventing damage caused by excessive heat.

[0321] In some examples, the thickness of the second heat dissipation substructure 212B and the thickness of the third heat dissipation substructure 212C can be set equal. Based on this, the structure of the first heat dissipation structure 21 can be simplified, which is conducive to simplifying the manufacturing process of the light-emitting substrate 100.

[0322] The thickness of the second type of second heat dissipation substructure 212B and the thickness of the third type of second heat dissipation substructure 212C can also be set to be different. The thickness of the second heat dissipation substructure 212 can be adjusted accordingly according to the heat generated by the second light-emitting unit P2 and the third light-emitting unit P, so as to use different thicknesses to balance the problem of different heat generation of different light-emitting units P, so as to better absorb the heat generated by each light-emitting unit P and better improve the heat dissipation effect of the light-emitting substrate 100.

[0323] In summary, the minimum spacing between the second heat dissipation substructure 212 in the light-emitting substrate 100 and the light-emitting units P it surrounds, as well as at least one of the thickness and width of the second heat dissipation substructure 212 can be adjusted so that the second heat dissipation substructure 212 can perform heat dissipation treatment for the light-emitting units P that generate different amounts of heat, thereby improving the heat dissipation effect of the light-emitting substrate 100.

[0324] Fig. 15 is a top view of a light-emitting substrate according to some other embodiments. Fig. 15 illustrates a light-emitting unit P including a light-emitting device O as an example. Fig. 15 does not illustrate the second heat-dissipating structure in order to illustrate the structure of the first heat-dissipating structure 21 .

[0325] The inventors have discovered that the luminous efficiency of the first light-emitting unit P1 (first light-emitting device O1) is low, which not only makes the first light-emitting unit P1 (first light-emitting device O1) mentioned above more susceptible to damage and other problems; it also causes the luminous brightness of the first light-emitting unit P1 (first light-emitting device O1) to be lower than the luminous brightness of the second light-emitting unit P2 (second light-emitting device O2) and the third light-emitting unit P3 (third light-emitting device O3), thereby causing the light-emitting substrate 100 to have a color deviation problem.

[0326] Based on this, as shown in Figure 15 , the low luminous efficiency and brightness of the first light-emitting unit P1 can be improved by increasing its size. Specifically, the first light-emitting unit P1 is larger than the second light-emitting unit P2; and / or the first light-emitting unit P1 is larger than the third light-emitting unit P3. However, increasing the size of the first light-emitting unit P1 directly results in increased heat generation and increased susceptibility to damage.

[0327] Based on this, on the basis of increasing the size of the first light-emitting unit P1, at least one of the three parameters of the width and thickness of the first heat dissipation structure 21 adjacent to the first light-emitting unit P and the minimum distance between the heat dissipation structure 21 and the first light-emitting unit P can be adjusted, so as to utilize the first heat dissipation structure 21 to better absorb the heat generated by the light-emitting unit P in the first light-emitting unit P1, so as to prevent the first light-emitting unit P1 from being overheated and causing damage to the light-emitting unit P inside it.

[0328] As for how to adjust at least one of the width and thickness of the first heat dissipation structure 21 adjacent to the first light-emitting unit P, and the minimum distance between the heat dissipation structure 21 and the first light-emitting unit P, it can be combined with the above-mentioned corresponding embodiments and will not be repeated here.

[0329] FIG16 is a top view of a light-emitting substrate according to some further embodiments, and FIG17 is an enlarged view of a portion of the touch electrodes in FIG16 .

[0330] In some embodiments, as shown in Figures 16 and 17, when the light-emitting substrate 100 is in the touch state, the first heat dissipation structure 21 in the heat dissipation layer 20 in the light-emitting substrate 100 can be reused as a touch layer. The first heat dissipation structure 21 can include multiple first touch electrodes Q1 and multiple second touch electrodes Q2.

[0331] In particular, multiple first touch electrodes Q1 extend along the row direction X and are arranged in the column direction Y, while multiple second touch electrodes Q2 extend along the column direction Y and are arranged in the row direction X. Furthermore, the first touch electrodes Q1 and the multiple second touch electrodes Q2 are arranged in an interlaced manner, and the row and column directions of the multiple first touch electrodes Q1 and the multiple second touch electrodes Q2 intersect to form multiple intersections. For example, the first touch electrodes Q1 can be touch scanning electrodes (Tx), and the second touch electrodes Q2 can be touch sensing electrodes (Rx). Each row of first touch electrodes Q1 can be connected to a touch scanning line, and each column of second touch electrodes Q2 can be connected to a touch sensing line. Mutual capacitance is generated near the intersections between the first touch electrodes in each row and the second touch electrodes in each column. When a finger or an object touches near an intersection, part of the mutual capacitance between the row and column couples to the finger or object, thereby reducing the capacitance at the intersection. The touch location can be detected based on this change in mutual capacitance.

[0332] As shown in Figure 17, two adjacent first touch electrodes Q1 in each row of first touch electrodes Q1 are electrically connected at each intersection via multiple first connecting portions F1. Two adjacent second touch electrodes Q2 in each column of second touch electrodes Q2 are electrically connected at each intersection via multiple first bridging portions F2. Furthermore, an insulating layer is provided between the first connecting portions F1 and the first bridging portions F2 to electrically insulate the first connecting portions F1 from the first bridging portions F2.

[0333] Because the multiple first touch electrodes Q1 in the multiple rows of first touch electrodes Q1 are electrically connected in sequence, the first touch electrodes Q1 located at the upper end of each subsequent row in the row direction can be connected to the second heat dissipation structure 22 located in the non-display area SA. Based on this, the multiple first touch electrodes Q1 can absorb heat generated by the light-emitting units P located within their openings K and conduct it to the second heat dissipation structure 22. The second heat dissipation structure 22 located in the non-display area SA conducts the heat absorbed by the multiple first touch electrodes Q1 in the first heat dissipation structure 21 to the non-display area SA of the light-emitting substrate 100, dissipating the heat and improving the heat dissipation performance of the light-emitting substrate 100.

[0334] Furthermore, the multiple second touch electrodes Q2 in the multiple columns of second touch electrodes Q2 are electrically connected in sequence. Subsequently, the second touch electrodes Q2 at the upper end of each column of second touch electrodes Q2 in the column direction can be connected to the second heat dissipation structure 22 located within the non-display area SA. Based on this, the multiple first touch electrodes Q1 can absorb heat generated by the light-emitting units P located within their openings K and conduct it to the second heat dissipation structure 22. The second heat dissipation structure 22 located within the non-display area SA conducts heat absorbed by the multiple first touch electrodes Q1 in the first heat dissipation structure 21 to the non-display area SA of the light-emitting substrate 100, dissipating the heat and improving the heat dissipation performance of the light-emitting substrate 100.

[0335] Therefore, the first heat dissipation structure 21 reused as the touch layer can realize both the touch function and the heat dissipation function.

[0336] In some examples, the first touch electrode Q1 and the second touch electrode Q2 are mesh electrodes. Each of the first touch electrode Q1 and the second touch electrode Q2 includes a plurality of openings K, and the orthographic projections of the light emitting units P on the substrate 10 are located inside the orthographic projections of the openings K on the substrate 10 .

[0337] Based on this, the mesh touch electrode can not only realize the touch function, but also prevent the first touch electrode Q1 and the second touch electrode Q2 from blocking the light emitting unit P, and can also use the first touch electrode Q1 and the second touch electrode Q2 to absorb heat from the light emitting unit P, thereby improving the heat dissipation performance of the light emitting substrate 100.

[0338] FIG18 is a cross-sectional view of a light-emitting substrate according to some other embodiments.

[0339] The inventors have found that when the first heat dissipation structure 21 is reused as a touch layer, signal crosstalk is likely to occur between the touch layer 50 and the driving circuit layer T during operation, affecting the touch sensitivity and accuracy of the light-emitting substrate 100 .

[0340] Based on this, in some embodiments, as shown in FIG. 18 , the light-emitting substrate 100 further includes a support layer 60 , and the support layer 60 is located between the first heat dissipation structure 21 (touch layer 50 ) and the driving circuit layer T.

[0341] Based on this, the support layer 60 can be used to raise the height of the first heat dissipation structure 21, that is, to raise the height of the touch layer 50. This can further increase the distance between the drive circuit layer T and the touch layer 50. This reduces crosstalk between the touch layer 50 and the drive circuit layer T, thereby improving the touch sensitivity and accuracy of the light-emitting substrate 100.

[0342] In some examples, along the thickness direction Z of the substrate 10 , the thickness of the support layer 60 is greater than or equal to 10 μm.

[0343] When the thickness of the support layer 60 along the thickness direction Z of the substrate 10 is equal to or close to 10 μm, the height of the touch layer 50 raised by the support layer 60 can be used to increase the distance between the driving circuit layer T and the touch layer 50. Furthermore, the crosstalk problem between the touch layer 50 and the driving circuit layer T can be improved, thereby improving the touch sensitivity and accuracy of the light-emitting substrate 100.

[0344] In some examples, along the thickness direction Z of the substrate 10 , the thickness of the support layer 60 is greater than or equal to 20 μm.

[0345] When the thickness of the support layer 60 along the thickness direction Z of the substrate 10 is equal to or close to 10 μm, the support layer 60 can be effectively utilized to raise the height of the touch layer 50, thereby increasing the distance between the driving circuit layer T and the touch layer 50. Furthermore, the crosstalk problem between the touch layer 50 and the driving circuit layer T can be improved, thereby enhancing the touch sensitivity and accuracy of the light-emitting substrate 100.

[0346] In some examples, along the thickness direction Z of the substrate 10, the sum of the thickness of the support layer 60 and the thickness of the first heat dissipation structure 21 (touch layer 50) is greater than the thickness of the light-emitting device O. Thus, the support layer 60 can be used to pad the height of the touch layer 50, thereby increasing the distance between the drive circuit layer T and the touch layer 50. Furthermore, the crosstalk between the touch layer 50 and the drive circuit layer T can be improved, thereby enhancing the touch sensitivity and accuracy of the light-emitting substrate 100.

[0347] In other embodiments, the light-emitting substrate 100 may further include an auxiliary supporting layer disposed between the bonding electrode 31 and the driving circuit layer T. The auxiliary supporting layer can be used to raise the height of the light-emitting device O, so that the sum of the thickness of the auxiliary supporting layer and the thickness of the light-emitting device O is greater than the sum of the thickness of the supporting layer 60 and the thickness of the first heat dissipation structure 21 (touch layer 50). This can prevent subsequent bonding failures between the light-emitting device O and the bonding electrode 31, thereby improving the quality of the light-emitting substrate 100.

[0348] In some examples, because the auxiliary support layer is disposed between the binding electrode 31 and the drive circuit layer T, a through-hole can be provided in the auxiliary support layer to facilitate electrical connection between the binding electrode 31 and the drive circuit T1 in the drive circuit layer T through the through-hole. Furthermore, because the auxiliary support layer is disposed between the binding electrode 31 and the drive circuit layer T, the distance between the binding electrode 31 and the drive circuit layer T is increased. When the binding electrode 31 is electrically connected to the drive circuit T1 in the drive circuit layer T through a punching process, the depth of the through-hole increases, making blind vias more likely to occur. Therefore, the binding electrode 31 is electrically connected to the drive circuit T1 in the drive circuit layer T through a secondary punching process, thereby reducing the depth of the through-hole during each punching process and improving the blind via problem.

[0349] The above mainly introduces the first heat dissipation structure 21 located in the display area AA of the heat dissipation layer 20 in combination with the relevant drawings, and the following will introduce the structure of the second heat dissipation structure 22 located in the non-display area SA of the heat dissipation layer 20 in combination with the relevant drawings.

[0350] FIG19 is a top view of a light emitting substrate according to yet other embodiments.

[0351] In some embodiments, as shown in FIG. 19 , in the direction from the display area AA to the non-display area SA, the width W2 of the second heat dissipation structure 22 ranges from 20 μm to 1000 μm.

[0352] When the width W2 of the second heat dissipation structure 22 is equal to or close to 20 μm in the direction from the display area AA to the non-display area SA, the heat dissipation area requirement of the second heat dissipation structure 22 can be met. In addition, since the width W2 of the second heat dissipation structure 22 is relatively small, it can also help reduce the width of the non-display area SA, thereby facilitating the realization of a narrow frame of the light-emitting substrate 100.

[0353] When the width W2 of the second heat dissipation structure 22 is equal to or close to 1000 μm in the direction from the display area AA to the non-display area SA, the width W2 of the second heat dissipation structure 22 is larger, which can be beneficial to increase the heat dissipation area of ​​the second heat dissipation structure 22, and can make the heat dissipation layer 20 have better thermal conductivity, so as to improve the heat dissipation performance of the light-emitting substrate 100.

[0354] Regarding "the width W2 of the second heat dissipation structure 22 in the direction from the display area AA to the non-display area SA is in the range of 20 μm to 1000 μm," the following three situations are included:

[0355] The first type: along the row direction X, the width W2 of the second heat dissipation structure 22 ranges from 20 μm to 1000 μm.

[0356] The second type: along the column direction Y, the width W2 of the second heat dissipation structure 22 ranges from 20 μm to 1000 μm.

[0357] The third type: along the row direction X, the width W2 of the second heat dissipation structure 22 ranges from 20 μm to 1000 μm, and along the column direction Y, the width W2 of the second heat dissipation structure 22 ranges from 20 μm to 1000 μm.

[0358] However, the embodiments of the present disclosure are not limited thereto. In any of the above cases, the heat dissipation area requirement of the second heat dissipation structure 22 can be met, so that the heat dissipation layer 20 has better thermal conductivity, thereby improving the heat dissipation performance of the light-emitting substrate 100 .

[0359] In some examples, the width W2 of the second heat dissipation structure 22 in the direction from the display area AA to the non-display area SA ranges from 200 μm to 1000 μm.

[0360] When the width W2 of the second heat dissipation structure 22 is equal to or close to 200 μm in the direction from the display area AA to the non-display area SA, it is beneficial to realize a narrow frame of the light-emitting substrate 100 and meet the heat dissipation area requirement of the second heat dissipation structure 22 .

[0361] When the width W2 of the second heat dissipation structure 22 is equal to or close to 1000 μm in the direction from the display area AA to the non-display area SA, the heat dissipation layer 20 can have better thermal conductivity to improve the heat dissipation performance of the light-emitting substrate 100, and can also meet the narrow frame requirement of the light-emitting substrate 100.

[0362] In some other examples, the width W2 of the second heat dissipation structure 22 in the direction from the display area AA to the non-display area SA ranges from 500 μm to 1000 μm. However, the embodiments of the present disclosure are not limited thereto.

[0363] For example, along the direction from the display area AA to the non-display area SA, the width W2 of the second heat dissipation structure 22 is approximately 100 μm, 200 μm, 300 μm, 400 μm, 500 μm, 600 μm, 700 μm, 800 μm, 900 μm, or 1000 μm. However, the present disclosure is not limited thereto.

[0364] Taking the direction from the display area AA to the non-display area SA, the width W2 of the second heat dissipation structure 22 is about 1000 μm as an example, which can not only make the heat dissipation layer 20 have better thermal conductivity, but also meet the narrow frame requirement of the light-emitting substrate 100.

[0365] It should be noted that due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the width W2 of the second heat dissipation structure 22 in the direction from the display area AA to the non-display area SA fluctuates within the range of 10%×1000μm, it can also be considered that the width W2 of the second heat dissipation structure 22 satisfies the requirement of being equal to 1000μm.

[0366] In addition, in other examples, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the width W2 of the second heat dissipation structure 22 in the direction from the display area AA to the non-display area SA fluctuates within the range of 5%×1000μm, it can also be considered that the width W2 of the second heat dissipation structure 22 satisfies the requirement of being equal to 1000μm.

[0367] In some embodiments, as shown in FIG. 19 , in the direction from the display area AA to the non-display area SA, the second heat dissipation structure 22 has a third minimum distance D3 from the boundary V1 on the side away from the display area AA and the boundary V2 of the substrate 10 .

[0368] A third minimum distance D3 is reserved between the boundary V1 of the second heat dissipation structure 22 away from the display area AA and the boundary V2 of the substrate 10 corresponding thereto. This can prevent the second heat dissipation structure 22 from being accidentally touched when cutting the light-emitting substrate 100, thereby preventing the second heat dissipation structure 22 from being damaged and affecting the quality of the second heat dissipation structure 22 and its heat dissipation effect.

[0369] In some examples, third minimum distance D3 is greater than or equal to 150 μm.

[0370] When the third minimum distance D3 is equal to or close to 150 μm, the third minimum distance D3 is relatively small, which can reduce the space occupied by the space corresponding to the third minimum distance in the non-display area SA. This can help increase the size of the second heat dissipation structure 22, increase the heat dissipation area of ​​the second heat dissipation structure 22, and improve the heat dissipation performance of the heat dissipation layer 20. Furthermore, the size of the third minimum distance D3 can also ensure that the second heat dissipation structure 22 is not accidentally touched when the light-emitting substrate 100 is cut, thereby improving the quality of the light-emitting substrate 100.

[0371] FIG20 is a top view of a light-emitting substrate according to some further embodiments, and FIG21 is a structural diagram of a portion of the teeth in FIG20 .

[0372] In some embodiments, as shown in conjunction with Figures 20 and 21 , the difference from the light-emitting substrate 100 shown in Figure 19 lies in the structure of the second heat dissipation structure 22. The second heat dissipation structure 22 shown in Figure 19 only includes a main body 221. In contrast, as shown in Figure 20 , in the direction from the display area AA toward the non-display area SA, the second heat dissipation structure 22 includes a main body 221 and a toothed portion 222. The toothed portion 222 includes a plurality of teeth F arranged along the first direction A1.

[0373] In the case where the second heat dissipation structure 22 includes a main body portion 221 and a slotted portion 222, that is, the heat dissipation area of ​​the second heat dissipation structure 22 having the main body portion 221 and the slotted portion 222 is greater than the heat dissipation area of ​​the second heat dissipation structure 22 shown in FIG19 (which does not include the slotted portion 222). In other words, the slotted portion 222 can be used to increase the heat dissipation area of ​​the second heat dissipation structure 22, thereby improving the heat dissipation effect of the second heat dissipation structure 22. The second heat dissipation structure 22 can be used to conduct heat absorbed by the first heat dissipation structure to the non-display area of ​​the light-emitting substrate 100, thereby dissipating the heat and improving the heat dissipation performance of the light-emitting substrate 100. This prevents heat accumulation in the individual light-emitting devices O in the light-emitting substrate 100, which would affect the lifespan and uniformity of the light-emitting substrate 100.

[0374] In some examples, disposing the inserting portion 222 of the second heat dissipation structure 22 on a side of the body 221 away from the display area AA is equivalent to disposing the inserting portion 222 of the second heat dissipation structure 22 outside the body 221 .

[0375] This configuration allows the second heat dissipation structure 22 to better dissipate the heat absorbed by it through its inserting teeth 222, thereby improving the heat dissipation performance of the second heat dissipation structure 22, and further improving the heat dissipation performance of the light-emitting substrate 100. This prevents heat accumulation in each light-emitting device O in the light-emitting substrate 100, which would affect the lifespan and uniformity of the light-emitting substrate 100.

[0376] The first direction A1 is approximately perpendicular to the direction from the display area AA to the non-display area SA, and the first direction A1 is approximately perpendicular to the thickness direction Z of the substrate 10 .

[0377] At this time, the angle between the first direction A1 and the direction from the display area AA to the non-display area SA is approximately 90°. For example, the angle between the first direction A1 and the direction from the display area AA to the non-display area SA can be 85°, 90°, or 95°. Furthermore, the angle between the first direction A1 and the thickness direction Z of the substrate 10 is approximately 90°. For example, the angle between the first direction A1 and the thickness direction Z of the substrate 10 can be 85°, 90°, or 95°.

[0378] In some embodiments, as shown in FIG. 20 and FIG. 21 , along the first direction A1 , the width a1 of the insert teeth F ranges from 0.5 μm to 200 μm.

[0379] When the width a1 of the tooth F along the first direction A1 is equal to or close to 0.5 μm, the width a1 of the tooth F is relatively small, which can help increase the number of teeth F in the tooth portion 222, thereby increasing the total heat dissipation area of ​​the tooth portion 222, thereby improving the heat dissipation performance of the second heat dissipation structure 22, and further improving the heat dissipation performance of the light-emitting substrate 100. Furthermore, the width of the tooth F can also meet the requirements of existing processes.

[0380] When the width a1 of the tooth F along the first direction A1 is equal to or close to 200 μm, the width a1 of the tooth F is relatively wide, which can reduce the difficulty of manufacturing the tooth portion 222. Furthermore, the tooth portion 222 can meet the number of teeth F required, thereby meeting the heat dissipation area required by the tooth portion 222, thereby improving the heat dissipation performance of the second heat dissipation structure 22, and further improving the heat dissipation performance of the light-emitting substrate 100.

[0381] In some examples, along the first direction A1 , the width a1 of the insert teeth F ranges from 2.5 μm to 100 μm.

[0382] When the width a1 of the tooth F along the first direction A1 is equal to or close to 2.5 μm, the number of the teeth F in the tooth portion 222 can be increased, which is beneficial to increasing the total heat dissipation area of ​​the tooth portion 222 and improving the heat dissipation performance of the second heat dissipation structure 22, and the teeth F in the tooth portion 222 can meet the requirements of the existing process.

[0383] When the width a1 of the tooth F along the first direction A1 is equal to or close to 100 μm, it can not only reduce the process difficulty of manufacturing the tooth portion 222, but also meet the tooth portion 222's requirement for the number of teeth F, thereby meeting the tooth portion 222's requirement for its heat dissipation area, thereby improving the heat dissipation performance of the second heat dissipation structure 22, and further helping to improve the heat dissipation performance of the light-emitting substrate 100.

[0384] In some other examples, along the first direction A1 , the width a1 of the insert teeth F ranges from 2.5 μm to 45 μm.

[0385] When the width a1 of the tooth F along the first direction A1 is equal to or close to 2.5 μm, the number of teeth F in the tooth portion 222 can be larger, which is beneficial to increasing the total heat dissipation area of ​​the tooth portion 222 and improving the heat dissipation performance of the second heat dissipation structure 22, and the process difficulty of manufacturing the tooth portion 222 can be reduced to a certain extent.

[0386] When the width a1 of the tooth F along the first direction A1 is equal to or close to 45 μm, it can not only reduce the process difficulty of manufacturing the tooth portion 222, but also help increase the number of teeth F in the tooth portion 222, thereby increasing the heat dissipation area of ​​the tooth portion 222, thereby improving the heat dissipation performance of the second heat dissipation structure 22, and further can help improve the heat dissipation performance of the light-emitting substrate 100.

[0387] In some other examples, along the first direction A1 , the width a1 of the insert teeth F ranges from 5 μm to 10 μm.

[0388] When the width a1 of the tooth F along the first direction A1 is equal to or close to 5 μm, the number of teeth F in the tooth portion 222 can be increased, which is beneficial to increasing the total heat dissipation area of ​​the tooth portion 222 and improving the heat dissipation performance of the second heat dissipation structure 22, and it can also be beneficial to reducing the process difficulty of manufacturing the tooth portion 222.

[0389] When the width a1 of the tooth F along the first direction A1 is equal to or close to 10 μm, it can not only reduce the process difficulty of manufacturing the tooth portion 222, but also help increase the number of teeth F in the tooth portion 222, thereby increasing the heat dissipation area of ​​the tooth portion 222, thereby improving the heat dissipation performance of the second heat dissipation structure 22, and further can help improve the heat dissipation performance of the light-emitting substrate 100.

[0390] For example, the width a1 of the insert teeth F along the first direction A1 is about 2.6 μm, 3 μm, 5 μm, 10 μm, 15 μm, 20 μm, 30 μm, 40 μm, 50 μm, 80 μm, 120 μm, 150 μm, 180 μm or 190 μm. However, the present disclosure is not limited thereto.

[0391] Taking the width a1 of the tooth F along the first direction A1 as approximately 2.6 μm as an example, it can not only make the number of the tooth F in the tooth portion 222 larger, which is beneficial to increase the total heat dissipation area of ​​the tooth portion 222 and improve the heat dissipation performance of the second heat dissipation structure 22, but also make the tooth F in the tooth portion 222 meet the requirements of the existing process.

[0392] It should be noted that due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the width a1 of the insert tooth F along the first direction A1 fluctuates within the range of 10%×2.6μm, it can also be considered that the width a1 of the insert tooth F along the first direction A1 satisfies and satisfies 2.6μm.

[0393] In addition, in other examples, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the width a1 of the insert tooth F along the first direction A1 fluctuates within the range of 5%×2.6μm, it can also be considered that the width a1 of the insert tooth F along the first direction A1 satisfies and satisfies 2.6μm.

[0394] In some embodiments, as shown in FIG. 20 and FIG. 21 , along the first direction A1 , the second minimum distance D2 between two adjacent insert teeth F ranges from 0.5 μm to 200 μm.

[0395] When the second minimum spacing D2 between two adjacent inserts F along the first direction A1 is equal to or close to 0.5 μm, the gap between the two adjacent inserts F is small, thereby enabling the insert portion 222 to have a larger number of inserts F, which helps increase the total heat dissipation area of ​​the insert portion 222 and improve the heat dissipation performance of the second heat dissipation structure 22. Furthermore, the gap between two adjacent inserts F can also meet the requirements of existing processes.

[0396] When the second minimum spacing D2 between two adjacent prongs F along the first direction A1 is equal to or close to 200 μm, the gap between the two adjacent prongs F is larger, which can effectively reduce the difficulty of manufacturing the prong portion 222. Furthermore, the gap between the two adjacent prongs F will not be too large, thereby meeting the prong portion 222's requirement for the number of prongs F and its heat dissipation area, thereby improving the heat dissipation performance of the second heat dissipation structure 22, and further improving the heat dissipation performance of the light-emitting substrate 100.

[0397] In some examples, along the first direction A1 , the second minimum distance D2 between two adjacent insert teeth F ranges from 2.5 μm to 100 μm.

[0398] When the second minimum spacing D2 between two adjacent inserts F along the first direction A1 is equal to or close to 2.5 μm, a larger number of inserts F can be provided in the insert portion 222, thereby increasing the total heat dissipation area of ​​the insert portion 222 and improving the heat dissipation performance of the second heat dissipation structure 22; and the requirements of existing processes can be met.

[0399] When the second minimum spacing D2 between two adjacent insert teeth F along the first direction A1 is equal to or close to 100 μm, it can not only reduce the process difficulty of manufacturing the insert tooth portion 222, but also meet the insert tooth portion 222's requirement for the number of insert teeth F, thereby meeting the insert tooth portion 222's requirement for its heat dissipation area, thereby improving the heat dissipation performance of the second heat dissipation structure 22.

[0400] In some other examples, along the first direction A1 , the second minimum distance D2 between two adjacent insert teeth F ranges from 2.5 μm to 45 μm.

[0401] When the second minimum spacing D2 between two adjacent insert teeth F along the first direction A1 is equal to or close to 2.5 μm, the insert tooth portion 222 can have a larger number of insert teeth F, which is beneficial to increase the total heat dissipation area of ​​the insert tooth portion 222 and improve the heat dissipation performance of the second heat dissipation structure 22; it can also reduce the process difficulty of manufacturing the insert tooth portion 222 to a certain extent.

[0402] When the second minimum spacing D2 between two adjacent insert teeth F along the first direction A1 is equal to or close to 45 μm, it can not only reduce the process difficulty of manufacturing the insert tooth portion 222, but also increase the number of insert teeth F in the insert tooth portion 222, thereby increasing the heat dissipation area of ​​the insert tooth portion 222 and improving the heat dissipation performance of the second heat dissipation structure 22.

[0403] In some other examples, along the first direction A1 , the second minimum distance D2 between two adjacent insert teeth F ranges from 5 μm to 10 μm.

[0404] When the second minimum spacing D2 between two adjacent insert teeth F along the first direction A1 is equal to or close to 5 μm, the insert tooth portion 222 can have a larger number of insert teeth F, which is beneficial to increasing the total heat dissipation area of ​​the insert tooth portion 222 and improving the heat dissipation performance of the second heat dissipation structure 22; it can also help reduce the process difficulty of manufacturing the insert tooth portion 222.

[0405] When the second minimum spacing D2 between two adjacent insert teeth F along the first direction A1 is equal to or close to 10 μm, it can not only reduce the process difficulty of manufacturing the insert tooth portion 222, but also increase the number of insert teeth F in the insert tooth portion 222, thereby increasing the heat dissipation area of ​​the insert tooth portion 222 and improving the heat dissipation performance of the second heat dissipation structure 22.

[0406] For example, along the first direction A1, the second minimum distance D2 between two adjacent inserts F is approximately 5 μm, 10 μm, 15 μm, 20 μm, 30 μm, 40 μm, 50 μm, 80 μm, 120 μm, 150 μm, 180 μm, or 190 μm. However, the present disclosure is not limited thereto.

[0407] Taking the second minimum spacing D2 of about 5 μm between two adjacent inserts F along the first direction A1 as an example, it can not only provide a larger number of inserts F in the insert portion 222, which is beneficial to increase the total heat dissipation area of ​​the insert portion 222 and improve the heat dissipation performance of the second heat dissipation structure 22; but also meet the requirements of existing processes.

[0408] It should be noted that, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error fluctuation range of the second minimum spacing D2 between two adjacent inserts F along the first direction A1 fluctuates within the range of 10%×5μm, it can also be considered that the second minimum spacing D2 between two adjacent inserts F along the first direction A1 satisfies the requirement of being equal to 5μm.

[0409] In addition, in other examples, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the second minimum spacing D2 between two adjacent inserts F along the first direction A1 fluctuates within the range of 5%×5μm, it can also be considered that the second minimum spacing D2 between two adjacent inserts F along the first direction A1 satisfies the requirement of being equal to 5μm.

[0410] In some embodiments, as shown in conjunction with Figures 20 and 21 , the length L of the insert F along the direction from the display area AA toward the non-display area SA satisfies the following requirement: L ≥ 0.1W2, where W2 is the width of the second heat dissipation structure 22 along the direction from the display area AA toward the non-display area SA. In other words, W2 is the sum of the length of the main body 221 and the length of the insert 222 (the length L of the insert F) along the direction from the display area AA toward the non-display area SA.

[0411] In the above structure, the length of the toothed portion 222 (the length L of the toothed portion F) in the second heat dissipation structure 22 accounts for a ratio of greater than or equal to 10% of the length of the second heat dissipation structure 22. This arrangement allows the toothed portion 222 in the second heat dissipation structure 22 to be longer, thereby increasing the total heat dissipation area of ​​the second heat dissipation structure 22 and improving the heat dissipation performance of the second heat dissipation structure 22. Furthermore, the length L of the toothed portion F can also meet the requirements of existing processes.

[0412] When the length L of the tooth F is equal to or close to 0.1W in the direction from the display area AA toward the non-display area SA, that is, when the length of the tooth portion 222 of the second heat dissipation structure 22 accounts for or close to 10% of the length of the second heat dissipation structure 22, the length L of the tooth F can meet the length requirement of the tooth portion 222, thereby increasing the total heat dissipation area of ​​the second heat dissipation structure 22 and improving the heat dissipation performance of the second heat dissipation structure 22. Furthermore, the length L of the tooth F can also meet the requirements of existing processes.

[0413] In some examples, in a direction from the display area AA to the non-display area SA, the length L of the inserting teeth F satisfies: L≥0.2W2.

[0414] When the length L of the insert F is equal to or close to 0.1W in the direction from the display area AA toward the non-display area SA, that is, when the length of the insert portion 222 of the second heat dissipation structure 22 accounts for or close to 20% of the length of the second heat dissipation structure 22, the length L of the insert F can be increased to a certain extent. This allows the insert portion 222 of the second heat dissipation structure 22 to increase the total heat dissipation area of ​​the second heat dissipation structure 22 and improve the heat dissipation performance of the second heat dissipation structure 22. Furthermore, the length L of the insert F can also meet the requirements of existing processes.

[0415] In some other examples, in the direction from the display area AA to the non-display area SA, the length L of the inserting teeth F satisfies: L≥0.2W2.

[0416] When the length L of the insert F is equal to or close to 0.2W in the direction from the display area AA toward the non-display area SA, that is, when the length of the insert portion 222 of the second heat dissipation structure 22 accounts for or close to 20% of the length of the second heat dissipation structure 22, the length L of the insert F can be increased to a certain extent. This allows the insert portion 222 of the second heat dissipation structure 22 to increase the total heat dissipation area of ​​the second heat dissipation structure 22 and improve the heat dissipation performance of the second heat dissipation structure 22. Furthermore, the length L of the insert F can also meet the requirements of existing processes.

[0417] In some other examples, in the direction from the display area AA to the non-display area SA, the length L of the inserting teeth F satisfies: L≥0.5W2.

[0418] When the length L of the insert F is equal to or close to 0.5W in the direction from the display area AA toward the non-display area SA, that is, when the length of the insert portion 222 of the second heat dissipation structure 22 accounts for or close to 50% of the length of the second heat dissipation structure 22, it is advantageous to increase the length L of the insert F. This allows the insert portion 222 of the second heat dissipation structure 22 to increase the total heat dissipation area of ​​the second heat dissipation structure 22, thereby improving the heat dissipation performance of the second heat dissipation structure 22. Furthermore, the length L of the insert F can also meet the requirements of existing processes.

[0419] However, the embodiments of the present disclosure are not limited thereto.

[0420] Figure 22 is a structural diagram of the tooth-slotting portion in the second heat dissipation structure according to some embodiments, Figure 23 is a structural diagram of the tooth-slotting portion in the second heat dissipation structure according to other embodiments, and Figure 24 is a structural diagram of the tooth-slotting portion in the second heat dissipation structure according to yet other embodiments.

[0421] In some embodiments, as shown in Figures 20 to 24 , the teeth within the toothed portion 222 of the second heat dissipation structure 22 may be rectangular, trapezoidal, triangular, or semi-elliptical. However, the disclosed embodiments are not limited thereto. Any of these shapes can utilize the toothed portion 222 to increase the total heat dissipation area of ​​the second heat dissipation structure 22, thereby improving the heat dissipation performance of the second heat dissipation structure 22. Specifically, when the teeth within the toothed portion 222 are rectangular, they can be more easily manufactured compared to other shapes.

[0422] It should be noted that, as shown in Figures 22 to 24, Figure 22 illustrates the configuration of the teeth F within the toothing portion 222 as a trapezoid, Figure 23 illustrates the configuration of the teeth F within the toothing portion 222 as a triangle, and Figure 24 illustrates the configuration of the teeth F within the toothing portion 222 as a semi-elliptical. When the teeth are trapezoidal, triangular, or semi-elliptical, the width of the teeth F can be the minimum width of the teeth F on the side closest to the body portion 221, and the spacing between two adjacent teeth F can be the minimum spacing between two adjacent teeth F on the side closest to the body portion 221. However, the present disclosure is not limited to this.

[0423] Figure 25 is a top view of the light-emitting substrate according to some further embodiments, Figure 26 is a structural diagram of the groove in Figure 25, Figure 27 is a top view of the light-emitting substrate according to some further embodiments, and Figure 28 is a structural diagram of the via in Figure 27.

[0424] In some embodiments, referring to Figures 25 to 28 , the difference between the second heat dissipation structure 22 and the second heat dissipation structure 22 shown in Figure 19 is that the second heat dissipation structure 22 includes multiple grooves M1 and / or multiple vias M2. Based on this, the structure of the second heat dissipation structure 22 includes the following three situations:

[0425] The first type: Referring to Figures 25 and 26 , the second heat dissipation structure 22 includes a plurality of grooves M1. For example, the second heat dissipation structure 22 includes a plurality of grooves M1 on a side away from the substrate 10.

[0426] As described above, when multiple grooves M1 are formed on the second heat dissipation structure 22, it is equivalent to adding multiple small surfaces for forming the grooves M1 to the second heat dissipation structure 22. In this case, the total heat dissipation area of ​​the second heat dissipation structure 22 is greater than the heat dissipation area of ​​the second heat dissipation structure 22 shown in Figure 19. In other words, the second heat dissipation structure 22 shown in Figures 25 and 26 can utilize multiple grooves M1 to increase the heat dissipation area of ​​the second heat dissipation structure 22, thereby improving the heat dissipation performance of the second heat dissipation structure 22, and thus can help improve the heat dissipation performance of the light-emitting substrate 100.

[0427] The second type: Referring to Figures 27 and 28 , the second heat dissipation structure 22 includes a plurality of vias M2 . Exemplarily, the vias M2 extend along the thickness direction Z of the substrate 10 .

[0428] As described above, when multiple vias M2 are formed on the second heat dissipation structure 22, it is equivalent to adding multiple small surfaces for forming the vias M2 to the second heat dissipation structure 22. In this case, the total heat dissipation area of ​​the second heat dissipation structure 22 is greater than the heat dissipation area of ​​the second heat dissipation structure 22 shown in Figure 19. In other words, the second heat dissipation structure 22 shown in Figures 27 and 28 can utilize multiple vias M2 to increase the heat dissipation area of ​​the second heat dissipation structure 22, thereby improving the heat dissipation performance of the second heat dissipation structure 22, and thus can help improve the heat dissipation performance of the light-emitting substrate 100.

[0429] The third type: the second heat dissipation structure 22 includes a plurality of grooves M1 and a plurality of via holes M2.

[0430] As configured above, when a plurality of grooves M1 and a plurality of vias M2 are formed on the second heat dissipation structure 22, it is equivalent to adding a plurality of small surfaces for forming the via grooves M1 and M2 on the second heat dissipation structure 22. At this time, the total heat dissipation area of ​​the second heat dissipation structure 22 is greater than the heat dissipation area of ​​the second heat dissipation structure 22 shown in FIG19. That is, the second heat dissipation structure 22 having a plurality of grooves M1 and a plurality of vias M2 can utilize the plurality of grooves M1 and the plurality of vias M2 to increase its heat dissipation area, so as to improve the heat dissipation performance of the second heat dissipation structure 22, thereby being beneficial to improving the heat dissipation performance of the light-emitting substrate 100. In addition, the structure of the second heat dissipation structure 22 can also be made more flexible, so as to facilitate the adaptive adjustment of the total heat dissipation area of ​​the second heat dissipation structure 22, so as to better improve the heat dissipation performance of the second heat dissipation structure 22, thereby being beneficial to improving the heat dissipation performance of the light-emitting substrate 100.

[0431] However, the embodiments of the present disclosure are not limited thereto.

[0432] Figure 29 is a structural diagram of the vias in the second heat dissipation structure according to some embodiments, Figure 30 is a structural diagram of the vias in the second heat dissipation structure according to other embodiments, Figure 31 is a structural diagram of the vias in the second heat dissipation structure according to still other embodiments, and Figure 32 is a structural diagram of the vias in the second heat dissipation structure according to still other embodiments.

[0433] In some embodiments, as shown in Figures 25 to 32 , when the second heat dissipation structure 22 includes a groove M1, the shape of the orthographic projection of the groove M1 on the substrate 10 can be at least one of a square, a rectangle, an ellipse, a hexagon, or a four-pointed star. However, the embodiments of the present disclosure are not limited thereto. For example, the shape of the orthographic projection of the groove M1 on the substrate 10 can also be a circle, a triangle, an octagon, etc.

[0434] When the second heat dissipation structure 22 includes a via M2, the orthographic projection of the via M2 onto the substrate 10 may be in the shape of at least one of a square, a rectangle, an ellipse, a hexagon, or a four-pointed star. However, the present disclosure is not limited thereto. For example, the orthographic projection of the via M2 onto the substrate 10 may be in the shape of a circle, a triangle, an octagon, etc.

[0435] Whether the second heat dissipation structure 22 includes the groove M1 or the via M2, and their corresponding various shapes, it can be beneficial to increase the heat dissipation area of ​​the second heat dissipation structure 22, and further improve the heat dissipation performance of the second heat dissipation structure 22 and the heat dissipation performance of the light-emitting substrate 100.

[0436] Among them, Figures 29 to 32 are illustrated by taking the second heat dissipation structure 22 including the via M2 as an example. When the second heat dissipation structure 22 includes the groove M1, the orthographic projection of the groove M1 on the substrate 10 is similar to the orthographic projection of the via M2 on the substrate 10, and can also be referred to as shown in Figures 29 to 32.

[0437] In other embodiments, when the second heat dissipation structure 22 includes a main body portion 221 and a slotted portion 222, multiple grooves M1 and / or multiple vias M2 may be located in the main body portion 221. In this case, the total heat dissipation area of ​​the main body portion 221 of the second heat dissipation structure 22 is greater than the heat dissipation area of ​​the main body portion 221 (without grooves and vias) as shown in Figures 20 and 21. Furthermore, the main body portion 221 can increase the heat dissipation area of ​​the second heat dissipation structure 22, thereby improving the heat dissipation performance of the second heat dissipation structure 22 and the heat dissipation performance of the light-emitting substrate 100.

[0438] The main body 221 includes the following three situations:

[0439] The first type: a side of the body portion 221 away from the substrate 10 includes a plurality of grooves M1 .

[0440] The second type: the main body 221 includes a plurality of via holes M2 extending along the thickness direction Z of the substrate 10 .

[0441] The third type: the main body 221 includes a plurality of grooves M1 and a plurality of via holes M2.

[0442] Regardless of the above methods, the total heat dissipation area of ​​the main body 221 in the second heat dissipation structure 22 can be made greater than the heat dissipation area of ​​the main body 221 (without grooves and vias) shown in Figures 20 and 21. Furthermore, the heat dissipation area of ​​the second heat dissipation structure 22 can be increased by the main body 221, thereby improving the heat dissipation performance of the second heat dissipation structure 22 and the heat dissipation performance of the light-emitting substrate 100.

[0443] FIG33 is a cross-sectional view of a light-emitting substrate according to some further embodiments, and FIG34 is a cross-sectional view of a light-emitting substrate according to some further embodiments.

[0444] In some embodiments, as shown in Figures 33 and 34 , the light-emitting substrate 100 is a flexible light-emitting substrate 100. The non-display area SA of the light-emitting substrate 100 further includes a main area N1, a bending area W, and a back area N2, which are connected in sequence. The main area is connected to the display area, and the main area N1 and the back area N2 are arranged opposite each other along the thickness direction Z of the substrate 10. One side of the second heat dissipation structure 22 is connected to the first heat dissipation structure 21, and the other side of the second heat dissipation structure 22 extends to the bending area W or the back area N2.

[0445] With this arrangement, the non-display area SA can be bent toward the back of the light-emitting substrate 100 via the bending area W, thereby increasing the space of the non-display area SA while achieving a narrow bezel on the light-emitting substrate 100. Furthermore, this can help increase the space for the second heat dissipation structure 22 located in the non-display area, further increasing the heat dissipation area of ​​the second heat dissipation structure 22. This can improve the heat dissipation performance of the second heat dissipation structure 22 and, consequently, the heat dissipation performance of the light-emitting substrate 100.

[0446] In some examples, based on the structure of the aforementioned light-emitting substrate 100, the second heat dissipation structure 22 can extend through the main region N1 to the bending region W. Compared to a light-emitting substrate 100 without a bending region W, the second heat dissipation structure 22 relatively increases the portion of the second heat dissipation structure 22 located in the bending region W. This can increase the heat dissipation area of ​​the second heat dissipation structure 22, thereby improving the heat dissipation performance of the second heat dissipation structure 22 and, consequently, the heat dissipation performance of the light-emitting substrate 100.

[0447] There is no limit on the proportion of the second heat dissipation structure 22 that occupies the bending zone W. That is, the second heat dissipation structure 22 can extend to any position in the bending zone W. For example, the second heat dissipation structure 22 can extend to the critical position between the bending zone W and the back zone N2 to maximize the size of the second heat dissipation structure 22 within the bending zone W, thereby further increasing the heat dissipation area of ​​the second heat dissipation structure 22 and improving the heat dissipation performance of the second heat dissipation structure 22.

[0448] In other examples, based on the structure of the aforementioned light-emitting substrate 100, the second heat dissipation structure 22 can extend through the main region N1 and the bending region W to the back region N2. Compared to a light-emitting substrate 100 without a bending region W, the second heat dissipation structure 22 relatively increases the portion of the second heat dissipation structure 22 located in the bending region W and the back region N2. This can increase the heat dissipation area of ​​the second heat dissipation structure 22, thereby improving the heat dissipation performance of the second heat dissipation structure 22 and, consequently, the heat dissipation performance of the light-emitting substrate 100.

[0449] There is no limit on the proportion of the back area N2 occupied by the second heat dissipation structure 22. That is, the second heat dissipation structure 22 can extend to any location in the back area N2. For example, the second heat dissipation structure 22 can extend to the boundary of the back area N2 away from the bending area W to maximize the size of the second heat dissipation structure 22 within the back area N2, thereby further increasing the heat dissipation area of ​​the second heat dissipation structure 22 and improving the heat dissipation performance of the second heat dissipation structure 22.

[0450] In some examples, as shown in FIG33 , the substrate 10 in the light-emitting substrate 100 can be a flexible substrate. Exemplarily, the material of the substrate 10 can be an organic material. For example, the material of the substrate 10 can be any one of polyimide (PI), polycarbonate (PC), or polyvinyl chloride (PVC). During the manufacture of the light-emitting substrate 100, since the substrate 10 is a flexible substrate, the substrate 10 can be bent. Furthermore, the substrate 10 can extend to the back region N2 to enable the light-emitting substrate 100 to be bent.

[0451] In other examples, as shown in FIG34 , the substrate 10 in the light-emitting substrate 100 can be a rigid substrate. For example, the rigid substrate can be a glass substrate or a PMMA (Polymethyl methacrylate) substrate. During fabrication of the light-emitting substrate 100, since the substrate 10 is rigid, it cannot be bent. Therefore, the portions of the substrate 10 corresponding to the bending area W and the back area N2 can be removed, leaving only the substrate 10 in the display area AA and the main body area N1, thereby achieving a bendable light-emitting substrate 100.

[0452] In other embodiments, when the light-emitting substrate 100 is non-flexible, in order to achieve a narrow frame for the light-emitting substrate 100 while increasing the heat dissipation area of ​​the second heat dissipation structure 22, a side routing process can be used. The second heat dissipation structure 22 includes a first portion, a second portion, and a third portion connected in sequence. The first portion is located on the light-emitting side of the light-emitting substrate 100, and the third portion is located on the backlight side of the light-emitting substrate 100. Based on this, the second and third portions can be used to increase the heat dissipation area of ​​the second heat dissipation structure 22, thereby improving the heat dissipation performance of the second heat dissipation structure 22.

[0453] FIG35 is a flow chart of a method for manufacturing a light-emitting substrate according to some embodiments, and FIG36 is a structural diagram of some steps in FIG35 .

[0454] Some embodiments of the present disclosure provide a method for manufacturing a light-emitting substrate. As shown in Figures 35 and 36 , a light-emitting substrate 100 includes an active area (AA) and a non-display area SA. The non-display area SA is located on at least one side of the active area AA (e.g., one side; or, for example, all four sides, i.e., both the top and bottom sides and the left and right sides).

[0455] The manufacturing method includes: S1: forming a heat dissipation layer on a substrate, the heat dissipation layer including a first heat dissipation structure located in a display area and a second heat dissipation structure located in a non-display area, the first heat dissipation structure being connected to the second heat dissipation structure; the first heat dissipation structure including a plurality of openings.

[0456] In step S1, a heat dissipation layer 20 may be formed on the substrate 10 and patterned to form a first heat dissipation structure 21 located in the display area AA and a second heat dissipation structure 22 located in the non-display area SA. Furthermore, when forming the first heat dissipation structure 21 in the display area AA, a plurality of openings K are formed in the first heat dissipation structure 21, and the light-emitting units P are subsequently bonded within the openings K.

[0457] In step S1, including step S04, a heat dissipation mother layer 301 is formed on the substrate 10, and an organic photosensitive material 302 is formed on a layer of the heat dissipation mother layer 301 away from the substrate 10. Then, a first heat dissipation structure 21 and a second heat dissipation structure 22 are formed on the heat dissipation layer 20 through exposure, development, and other processes to form the heat dissipation layer 20.

[0458] S2: transferring the plurality of light-emitting units onto the substrate, wherein the plurality of light-emitting units are arranged in an array in the display area, and the orthographic projections of the light-emitting units on the substrate are located inside the openings on the substrate.

[0459] After forming the heat dissipation layer 20 in step S1 , a plurality of light emitting units P are transferred to the substrate 10 and bonded thereto in step S2 , and the orthographic projections of the light emitting units P on the substrate 10 are arranged inside the orthographic projections of the openings K on the substrate 10 .

[0460] Based on this, it is equivalent to arranging the first heat dissipation structure 21 in the heat dissipation layer 20 around the light emitting unit P, and the first heat dissipation structure 21 in the heat dissipation layer 20 can be used to absorb the heat emitted by the light emitting device O.

[0461] Furthermore, since the heat dissipation layer 20 further includes a second heat dissipation structure 22 located in the non-display area SA, and the first heat dissipation structure 21 located in the display area AA is structurally connected to the second heat dissipation structure 22 located in the non-display area SA, the second heat dissipation structure 22 can be used to conduct heat absorbed by the first heat dissipation structure to the non-display area of ​​the light-emitting substrate 100.

[0462] Therefore, in the light-emitting substrate 100, the first heat dissipation structure 21 located in the display area AA and the second heat dissipation structure 22 located in the non-display area SA of the heat dissipation layer 20 can cooperate with each other to conduct heat generated by each light-emitting device O in the display area AA of the light-emitting substrate 100 to the non-display area SA, thereby dissipating the heat and improving the heat dissipation performance of the light-emitting substrate 100. This prevents heat accumulation in each light-emitting device O in the light-emitting substrate 100, which would affect the lifespan and uniformity of the light-emitting substrate 100.

[0463] In some embodiments, as shown in FIG36 , the light-emitting substrate 100 further includes a binding electrode layer 30 and a driving circuit layer T, wherein the driving circuit layer T is located between the substrate 10 and the light-emitting device O. The binding electrode layer 30 is located between the driving circuit layer T and the light-emitting device O. The binding electrode layer 30 includes a plurality of binding electrodes 31, which are electrically connected to the light-emitting device O.

[0464] Before step S1, the following steps may also be included:

[0465] As shown in S01 in FIG. 36 , S01: A driving circuit layer T is formed on the substrate 10. The driving circuit layer T includes multiple driving circuits T1. The driving circuits T1 can be adjusted based on various types of signal lines to generate driving signals. Each light-emitting device O can emit light under the driving effect of the driving signal generated by the corresponding driving circuit Q. Based on this, the driving circuits T1 within the multiple light-emitting devices O can drive the corresponding light-emitting device O to emit light, so that the light-emitting substrate 100 can display an image in the display area AA.

[0466] Before step S1 and after step S01, the process may include forming a binding electrode layer 30 on a side of the driving circuit layer T away from the substrate 10. The binding electrode layer 30 includes a plurality of binding electrodes 31, which are electrically connected to the light emitting device O and the driving circuit T1 respectively.

[0467] Based on this, in step S2, when the multiple light-emitting units P are transferred to the substrate 10, the multiple light-emitting units P are bonded to the binding electrodes 31, so that the light-emitting units P are electrically connected to the driving circuit T1 in the driving circuit layer T through the binding electrodes 31. The binding electrodes 31 can transmit the driving signal provided by the driving circuit T1 to the light-emitting device O to drive the light-emitting device O to emit light.

[0468] Alternatively, in step S1 , as shown in S1 in FIG36 , the binding electrode layer 30 and the heat dissipation layer 20 are formed on a side of the driving circuit layer T away from the substrate 10 using the same mask.

[0469] As described above, the heat dissipation layer 20 and the bonding electrode layer 30 can be formed using the same patterning process. There is no need to add a mask plate and a patterning process to form the heat dissipation layer 20. This can help reduce process steps, increase production capacity, and save resources.

[0470] FIG37 is a structural diagram of some steps in a method for manufacturing a light-emitting substrate according to some embodiments.

[0471] As shown in FIG37 , after step S01 and before step S1, the manufacturing method may further include:

[0472] S02: forming a first insulating layer G1 on a side of the driving circuit layer T away from the substrate 10. The first insulating layer G1 can play a flat role, so that other film structures can be subsequently formed on the first insulating layer G1.

[0473] For example, the material of the first insulating layer G1 may be resin, but the present disclosure is not limited thereto.

[0474] S03 : using an exposure machine to expose the first insulating layer G1 to form a through hole H. The through hole H exposes the driving circuit T1 in the driving circuit layer T.

[0475] In step S1 , when the binding electrode 31 is formed on the side of the first insulating layer G1 away from the substrate 10 , the binding electrode 31 can be electrically connected to the driving circuit T1 exposed by the through hole H through the through hole H. In this way, the binding electrode 31 is electrically connected to the driving circuit T1 .

[0476] FIG38 is a structural diagram of other steps in the method for manufacturing a light-emitting substrate according to some embodiments.

[0477] In some embodiments, as shown in FIG. 38 , the manufacturing method further includes: S3 : forming a second insulating layer G2 on a side of the light emitting unit P away from the substrate 10 , and forming a through hole in the second insulating layer G2 to expose the light emitting unit P.

[0478] In step S3 , a plurality of through holes may be formed on the second insulating layer G2 by an etching process.

[0479] S4 : forming a connecting electrode layer 40 on a side of the second insulating layer G2 away from the substrate 10 . The connecting electrode layer 40 is electrically connected to the light emitting unit P through via holes on the second insulating layer G2 , and the connecting electrode layer 40 is in contact with the first heat dissipation structure 21 .

[0480] In step S4 , the connecting electrode layer 40 is located on a side of the second insulating layer G2 and the first heat dissipation structure 21 away from the substrate 10 , so that the connecting electrode layer 40 can be electrically connected to the light emitting unit P through the via hole and can directly contact the first heat dissipation structure 21 .

[0481] As shown in the above structure, the connecting electrode layer 40 is electrically connected to the light-emitting unit P, and in conjunction with the driving signal provided by the driving circuit T1, it can drive the light-emitting device O to emit light. When the connecting electrode layer 40 is directly in contact with the first heat dissipation structure 21, when the material of the first heat dissipation structure 21 is a metal material, since the first heat dissipation structure 21 also serves as a conductive portion, it is equivalent to utilizing the first heat dissipation structure 21 to increase the cross-sectional area of ​​the connecting electrode layer 40. This helps to reduce the resistance of the connecting electrode layer 40, reduce the voltage drop (IR Drop) of the connecting electrode layer 40, and reduce the impact of the impedance of the connecting electrode layer 40 on the power signal voltage provided by the voltage signal line, which helps to improve the brightness uniformity of the light-emitting substrate 100.

[0482] S5 : forming a protection layer R on a side of the connecting electrode layer 40 away from the substrate 10 .

[0483] In step S5, the protective layer R acts as a buffer to prevent damage to the light-emitting substrate 100 when subjected to external impact. Furthermore, disposing the protective layer R on the side of the connecting electrode layer 40 away from the substrate 10 can also prevent scratches on the film between the protective layer R and the substrate 10, thereby improving the quality of the light-emitting substrate 100.

[0484] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that a person skilled in the art can conceive within the technical scope disclosed in the present disclosure should be included within the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A light-emitting substrate, comprising: a display area and a non-display area, wherein the non-display area is located on at least one side of the display area; The light-emitting substrate further comprises: substrate; A plurality of light-emitting units are located on the substrate and arranged in an array in the display area; A heat dissipation layer is located on the substrate, the heat dissipation layer includes a first heat dissipation structure located in the display area and a second heat dissipation structure located in the non-display area, the first heat dissipation structure is connected to the second heat dissipation structure; the first heat dissipation structure includes a plurality of openings, and the orthographic projection of the light-emitting unit on the substrate is located inside the orthographic projection of the opening on the substrate.

2. The light-emitting substrate according to claim 1, further comprising: A binding electrode layer, located between the substrate and the light-emitting unit; The binding electrode layer includes a plurality of binding electrodes, the binding electrodes are located in the openings, and the binding electrodes in different openings are electrically connected to different light-emitting units; Wherein, the heat dissipation layer and the binding electrode layer are arranged in the same layer.

3. The light-emitting substrate according to claim 1 or 2, wherein: The first minimum distance between two adjacent light emitting units is D1, and the width of the first heat dissipation structure between the two adjacent light emitting units ranges from 0.05D1 to 0.95D1.

4. The light-emitting substrate according to claim 3, wherein: The width of the first heat dissipation structure located between two adjacent light-emitting units ranges from 0.14D1 to 0.63D1.

5. The light emitting substrate according to claim 3, wherein: The first heat dissipation structure is located between two adjacent light-emitting units, and a first gap is formed between the first heat dissipation structure and the two adjacent light-emitting units.

6. The light emitting substrate according to any one of claims 1 to 5, wherein The light-emitting unit includes a plurality of light-emitting devices, and the light-emitting devices include a first color light-emitting device and a second color light-emitting device; the first color light-emitting device is a light-emitting device emitting red light, and the second color light-emitting device is a light-emitting device emitting green light and / or a light-emitting device emitting blue light; The first heat dissipation structure comprises a plurality of first heat dissipation substructures connected to each other, wherein one of the first heat dissipation substructures is arranged around one of the light emitting units, and the minimum spacing between the interface of two adjacent first heat dissipation substructures and the light emitting units respectively surrounded is equal; The first heat dissipation substructure includes a first part and a second part connected in sequence, the first part is arranged along the edge of part of the first color light-emitting device, the second part is arranged along the edge of part of the second color light-emitting device, and the minimum distance between the first part and the first color light-emitting device is less than or equal to the minimum distance between the second part and the second color light-emitting device.

7. The light-emitting substrate according to claim 6, wherein: The thickness of the first portion is greater than or equal to the thickness of the second portion; and / or, The width of the first portion is greater than or equal to the width of the second portion.

8. The light emitting substrate according to any one of claims 1 to 5, wherein The plurality of light-emitting units include a first light-emitting unit, a second light-emitting unit and a third light-emitting unit; wherein the first light-emitting unit includes a first light-emitting device that emits red light, the second light-emitting unit includes a second light-emitting device that emits green light, and the third light-emitting unit includes a third light-emitting device that emits blue light; The first heat dissipation structure comprises a plurality of second heat dissipation substructures connected to each other, one of the second heat dissipation substructures is arranged around one of the light emitting units, and the minimum spacing between the interface of two adjacent second heat dissipation substructures and the light emitting units respectively surrounded is equal; The plurality of second heat dissipation substructures include a first second heat dissipation substructure, a second second heat dissipation substructure and a third second heat dissipation substructure; the first second heat dissipation substructure is arranged around the first light emitting unit, the second second heat dissipation substructure is arranged around the second light emitting unit, and the third second heat dissipation substructure is arranged around the third light emitting unit; The minimum distance between the first type of second heat dissipation substructure and the first light-emitting unit is less than or equal to the minimum distance between the second type of second heat dissipation substructure and the second light-emitting unit; and / or, The minimum distance between the first type of second heat dissipation substructure and the first light-emitting unit is less than or equal to the minimum distance between the third type of second heat dissipation substructure and the second light-emitting unit.

9. The light emitting substrate according to claim 8, wherein: The thickness of the first second heat dissipation substructure is greater than or equal to the thickness of the second second heat dissipation substructure; and / or, The thickness of the first type of second heat dissipation substructure is greater than or equal to the thickness of the third type of second heat dissipation substructure.

10. The light-emitting substrate according to claim 8 or 9, wherein: The width of the first second heat dissipation substructure is greater than or equal to the width of the second second heat dissipation substructure; and / or, The width of the first type of second heat dissipation substructure is greater than or equal to the width of the third type of second heat dissipation substructure.

11. The light emitting substrate according to any one of claims 1 to 10, wherein In a direction from the display area to the non-display area, a width of the second heat dissipation structure ranges from 200 μm to 1000 μm.

12. The light emitting substrate according to any one of claims 1 to 11, wherein In a direction from the display area to the non-display area, the second heat dissipation structure comprises a main body portion and a toothed portion, and the toothed portion is located at a side of the main body portion away from the display area; The inserting teeth portion includes a plurality of inserting teeth arranged along a first direction, wherein the first direction is approximately perpendicular to a direction from the display area to the non-display area, and the first direction is approximately perpendicular to a thickness direction of the substrate.

13. The light emitting substrate according to claim 12, wherein: Along the first direction, the width of the insert teeth ranges from 2.5 μm to 45 μm; and / or, Along the first direction, the second minimum spacing between two adjacent insert teeth ranges from 2.5 μm to 45 μm.

14. The light emitting substrate according to any one of claims 11 to 13, wherein Along the direction from the display area to the non-display area, the length L of the insert tooth satisfies: L≥0.5W2, wherein W2 is the width of the second heat dissipation structure along the direction from the display area to the non-display area.

15. The light emitting substrate according to any one of claims 1 to 14, wherein The second heat dissipation structure includes a plurality of grooves and / or a plurality of via holes.

16. The light emitting substrate according to any one of claims 1 to 15, wherein The non-display area includes a main area, a bending area and a back area connected in sequence, the main area is connected to the display area, and along the thickness direction of the substrate, the main area and the back area are arranged opposite to each other; Wherein, the second heat dissipation structure extends to the bending area or the back area.

17. The light emitting substrate according to any one of claims 1 to 16, wherein Along the thickness direction of the substrate, the thickness of the heat dissipation layer is less than or equal to the thickness of the light emitting unit.

18. The light emitting substrate according to any one of claims 1 to 17, wherein The light-emitting unit comprises a light-emitting device, and along a direction away from the substrate, the light-emitting device comprises a first electrode, a light-generating layer, and a second electrode in sequence; The light-emitting substrate further comprises a connecting electrode layer, which is located on a side of the light-emitting device away from the substrate, is electrically connected to second electrodes of a plurality of the light-emitting devices, and is in contact with the first heat dissipation structure.

19. The light emitting substrate according to any one of claims 1 to 18, wherein The first heat dissipation structure in the heat dissipation layer is reused as a touch layer. The first heat dissipation structure includes a plurality of first touch electrodes and a plurality of second touch electrodes. The first touch electrodes and the second touch electrodes are arranged alternately.

20. The light emitting substrate according to claim 19, further comprising: A driving circuit layer, located between the light-emitting unit and the substrate, and comprising a plurality of driving circuits, wherein the driving circuits are electrically connected to the light-emitting unit; and, A support layer is located between the first heat dissipation structure and the driving circuit layer; wherein, along the thickness direction of the substrate, the thickness of the support layer is greater than or equal to 10 μm.

21. A method for manufacturing a light-emitting substrate, wherein: The light-emitting substrate comprises: a display area and a non-display area, wherein the non-display area is located at least on one side of the display area; The production method comprises: forming a heat dissipation layer on the substrate, the heat dissipation layer comprising a first heat dissipation structure located in the display area and a second heat dissipation structure located in the non-display area, the first heat dissipation structure being connected to the second heat dissipation structure; the first heat dissipation structure comprising a plurality of openings; A plurality of light-emitting units are transferred to the substrate, and the plurality of light-emitting units are arranged in an array on the substrate, and the orthographic projections of the light-emitting units on the substrate are located inside the orthographic projections of the openings on the substrate.

22. The method according to claim 21, wherein: The light-emitting substrate further comprises a binding electrode layer, which is located between the substrate and the light-emitting unit; the binding electrode layer comprises a plurality of binding electrodes, the binding electrodes are located in the openings, and the binding electrodes located in the same opening are electrically connected to the light-emitting device; The step of forming a heat dissipation layer on the substrate comprises: The binding electrode layer and the heat dissipation layer are formed by using the same mask plate.

23. A display device comprising the light-emitting substrate according to any one of claims 1 to 20.

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