Anode, X-ray source and X-ray equipment

Abstract

The invention provides an anode, an X-ray source and X-ray equipment. The anode comprises a base, a diamond bearing piece and a target material. The base and the diamond bearing piece are both made of diamond. The base is formed by co-firing diamond powder and copper powder. The diamond bearing part and the base are fixed through welding, and the target material is arranged on the diamond bearing part. The target material is used for electron beam bombardment to generate X-rays. As the diamond bearing part has excellent strength and heat-conducting property, the diamond bearing part is adopted for bearing the target material, the electron beam power density threshold value capable of being borne by the target material can be enhanced, and the light intensity of X rays generated by the target material is improved. The base and the diamond bearing part are both made of diamond, so that the thermal expansion coefficient of the diamond of the base is closer to that of the diamond bearing part, and the possibility of cracking caused by stress generated by the difference of the thermal expansion coefficients of the base and the diamond bearing part can be reduced.

Description

Technical Field

[0001] This application relates to the field of X-ray technology, and particularly to an anode, an X-ray source, and an X-ray device. Background Art

[0002] Currently, commonly used X-ray sources generally generate X-rays by bombarding an anode target with an electron beam. A common anode includes a base and a target formed on the base. However, when the electron beam bombards the target, a large amount of heat is generated, causing the target to easily peel off from the base due to heat, affecting the service life of the anode and the X-ray source. Summary of the Invention

[0003] Embodiments of this application provide an anode, an X-ray source, and an X-ray device, which can solve the problem that the target is likely to peel off due to overheating when bombarded by an electron beam, thereby extending the service life.

[0004] In a first aspect, an embodiment of this application provides an anode. The anode includes a base, a diamond carrier, and a target. The materials of both the base and the diamond carrier include diamond. The base is formed by co-firing diamond powder and copper powder. The diamond carrier is fixed to the base, and the target is disposed on the diamond carrier. The target is used to be bombarded by an electron beam to generate X-rays. In the anode provided by this application, since the diamond carrier has excellent strength and thermal conductivity, using the diamond carrier to carry the target is beneficial to enhancing the electron beam power density threshold that the target can withstand and improving the light intensity of the X-rays generated by the target. Diamond has an extremely high thermal conductivity, and copper also has a relatively high thermal conductivity. The base is formed by co-firing diamond and copper powder, which is beneficial to improving the thermal conductivity of the base. In addition, during the sintering process of diamond and copper powder, the thermal expansion coefficient of the composite material formed by co-firing diamond and copper will be between that of diamond and copper, and the diamond carrier includes diamond, which makes the thermal expansion coefficients of the base and the diamond carrier closer or more matched. When a large amount of heat is generated when the target is bombarded by the electron beam and the heat is transferred to the base, the base will be heated. Since the base is formed by co-firing diamond and copper, the difference in thermal expansion coefficients between the base and the diamond carrier is reduced, that is, the thermal expansion coefficients of the base and the diamond carrier are closer. In this way, the possibility of the diamond carrier cracking due to the stress caused by the difference in thermal expansion coefficients between the base and the diamond carrier can be reduced, thereby reducing the possibility of the target peeling off from the diamond carrier and being beneficial to extending the service life of the anode. It can also further increase the electron beam power density threshold that the target can withstand, that is, it can improve the light intensity of the X-rays generated by the target. Moreover, the base is formed by co-firing diamond powder and copper powder, which has a lower cost compared to a base made of pure diamond.

[0005] According to the first aspect, in a possible implementation, the base is provided with a cooling channel for circulating a cooling working fluid.

[0006] In this possible implementation, the cooling channel is used to circulate the cooling working fluid to perform liquid cooling on the base when the anode is heated, thereby improving the heat dissipation efficiency of the anode. The heat generated when the target is bombarded by the electron beam can be conducted to the cooling working fluid through the diamond carrier and discharged from the base by the cooling working fluid, which is beneficial to reducing the temperature of the target. Since the heat of the target is exported from the base and the temperature of the target is reduced, this is conducive to reducing the possibility of evaporation of the target due to overheating at high temperature.

[0007] According to the first aspect, in a possible implementation, the base further includes a receiving cavity, and the anode further includes a phase change heat pipe received in the receiving cavity, and the phase change heat pipe is used for phase change heat dissipation.

[0008] In this possible implementation, on the basis of liquid cooling, a phase change heat pipe is further provided for the anode, so that the anode combines two heat dissipation methods of liquid cooling and phase change heat dissipation, which can greatly improve the heat dissipation speed and efficiency of the anode. The heat generated by the target can be quickly dissipated through the cooling working fluid and the phase change heat pipe, greatly reducing the temperature of the target and further reducing the possibility of evaporation of the target. In addition, since the heat of the target can be quickly exported, the power density threshold of the electron beam that the target can withstand is further increased, thereby further increasing the light intensity of the X-rays generated by the target.

[0009] In addition, the receiving cavity and the cooling channel are separately provided, and the phase change heat pipe received in the receiving cavity is protected, which is beneficial to extending the service life of the phase change heat pipe received in the receiving cavity.

[0010] According to the first aspect, in a possible implementation, the phase change heat pipe includes a main body and at least one first branch protruding from the main body. In this possible implementation, at least one first branch protrudes from the main body, which can increase the heat dissipation area of the phase change heat pipe and improve the heat dissipation efficiency of the phase change heat pipe.

[0011] According to the first aspect, in a possible implementation, the phase change heat pipe further includes at least one second branch protruding from the main body, and the first branch and the second branch are disposed on opposite sides of the main body. In this possible implementation, the phase change heat pipe further includes at least one second branch protruding from the main body, which can further increase the heat dissipation area of the phase change heat pipe and improve the heat dissipation efficiency of the phase change heat pipe.

[0012] According to the first aspect, in a possible implementation, the phase change heat pipe is housed in the accommodation cavity, and the phase change heat pipe is located between the diamond carrier and the cooling channel. In this possible implementation, compared with liquid cooling, the heat dissipation speed of the phase change heat pipe is faster. When the target is bombarded by the electron beam, it heats up. Since the phase change heat pipe with faster heat dissipation is arranged between the diamond carrier and the cooling channel, the phase change heat pipe can quickly absorb a large amount of heat generated by the target for phase change heat dissipation, thereby quickly reducing the temperature of the target, which is beneficial to further improving the heat dissipation efficiency of the anode.

[0013] According to the first aspect, in a possible implementation, the base further includes at least one turbulence structure provided on the inner wall of the cooling channel. In this possible implementation, the turbulence structure is used to make the cooling working fluid flowing in the cooling channel form turbulence, so as to change the flow velocity and flow direction of the cooling working fluid in the cold channel, thereby accelerating the heat transfer in the cooling working fluid and improving the cooling effect of the anode.

[0014] According to the first aspect, in a possible implementation, each of the turbulence structures encloses a receiving groove communicating with the accommodation cavity, and a part of the phase change heat pipe is received in the corresponding receiving groove. A part of the phase change heat pipe is received in the receiving groove surrounded by the corresponding turbulence structure, so that the heat discharged by the phase change of the phase change heat pipe reaches the cooling working fluid of the cooling channel through the turbulence structure. And the turbulence structure protrudes from the inner wall of the cooling channel, increasing the contact area between the cooling working fluid and the inner wall of the cooling channel, which is beneficial to improving the speed of the heat discharged by the phase change heat pipe to the inside of the cooling channel, and thus beneficial to improving the heat dissipation efficiency of the anode. In addition, the phase change heat pipe is received in the receiving groove surrounded by the turbulence structure, without increasing the size of the base in the arrangement direction of the target, the diamond carrier and the phase change heat pipe, which is beneficial to the miniaturization of the anode.

[0015] According to the first aspect, in a possible implementation, the phase change heat pipe is provided with a channel for accommodating the phase change working fluid, and the diameter range of the channel is [10μm, 1000μm]. The micro phase change heat pipe can, based on the principle of capillary action, realize the efficient transfer and dissipation of heat through the evaporation and condensation process of the phase change working fluid in the micro channel.

[0016] According to the first aspect, in a possible implementation, the phase change heat pipe is provided with a channel for accommodating the phase change working fluid, and the inner surface of the channel is provided with a nanostructure. The nanostructure can increase the contact area between the inner surface of the channel and the phase change working fluid, thereby being beneficial to enhancing the heat conduction efficiency, reducing the thermal resistance, and improving the heat dissipation efficiency of the phase change heat pipe.

[0017] According to the first aspect, in a possible implementation, the base and the diamond carrier are fixed by welding, which improves the bonding strength and bonding stability between the base and the diamond carrier.

[0018] According to a first aspect, in a possible implementation, the target is formed on a side of the diamond carrier facing away from the base by evaporation coating, so that the target, the diamond carrier, and the base are integrally arranged, and there is no gap between the target and the diamond carrier. When the target is bombarded by an electron beam, heat is directly and rapidly conducted by the diamond carrier with high thermal conductivity to the base for heat dissipation, which is beneficial to reducing the temperature of the target and reducing the possibility of the target detaching from the base.

[0019] In a second aspect, the present application provides an X-ray source, which includes a cathode and an anode according to the first aspect. The cathode is configured to emit an electron beam to the target, and the target is configured to emit X-rays under the bombardment of the electron beam.

[0020] The X-ray source is a core component of an X-ray device. Since the diamond of the base matches the crystal lattice of the diamond carrier, it can reduce the possibility of cracking due to stress caused by the difference in thermal expansion coefficients between the base material and the diamond carrier, which is beneficial to reducing the possibility of the target detaching from the diamond. While extending the service life of the anode, it can also further increase the electron beam power density threshold that the target can withstand, that is, it can increase the light intensity of the X-rays generated by the target.

[0021] In a third aspect, the present application provides an X-ray device, which includes a control system and the X-ray source according to the second aspect. The control system is configured to control the X-ray source.

[0022] In a fourth aspect, the present application provides a semiconductor device, which includes the X-ray device according to the third aspect. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a structural block diagram of an X-ray device provided by an embodiment of the present application;

[0024] Figure 2 It is a schematic diagram of an X-ray source provided by an embodiment of the present application;

[0025] Figure 3 It is a side view of an anode provided by an embodiment of the present application;

[0026] Figure 4 It is a cross-sectional schematic diagram of an anode provided by an embodiment of the present application.

[0027] Description of the reference numerals:

[0028] 1 - X-ray device; 10 - anode; 11 - base; 12 - diamond carrier; 13 - target; 15 - phase change heat pipe

[0029] 101 - X - ray source; 102 - detector; 103 - imaging system; 104 - control system; 112 - cooling channel; 114 - accommodating cavity; 116 - groove; 118 - receiving groove; 151 - main trunk; 153 - first branch; 155 - second branch;

[0030] 1122 - liquid inlet; 1124 - liquid outlet; 1126 - turbulence structure;

[0031] 20 - cathode;

[0032] 30 - power supply. Detailed implementation manners

[0033] Please refer to Figure 1 , an embodiment of the present application provides an X - ray device 1, which may include an X - ray source 101, a detector 102, an imaging system 103 and a control system 104.

[0034] The X - ray source 101 is the core component of the X - ray device 1. The X - ray source 101 is used to generate X - rays. Please refer to Figure 2 , the X - ray source 101 may include an anode 10, a cathode 20 and a power supply 30. When the power supply 30 applies a preset voltage to the cathode 20 and the anode 10, the electron beam emitted by the cathode 20 impacts the anode 10 under the action of an electric field, thereby generating X - rays.

[0035] The detector 102 is used to receive the X - rays that have passed through the object to be detected and convert them into electrical signals for subsequent processing and analysis. Common types of the detector 102 include scintillation detectors and gas detectors, etc.

[0036] The imaging system 103 is used to convert the X - ray signals received by the detector 102 into visible images. The imaging system 103 may include an image processor, a display and a memory. The image processor is used to process the electrical signals output by the detector 102, such as amplification, filtering, enhancement, etc., to obtain clear images. The display is used to display the images processed by the image processor. The memory is used to store detection data and images.

[0037] The control system 104 is used to control the X - ray source 101, the detector 102, the imaging system 103, etc., to be responsible for the operation and control of the X - ray device 1. The control system 104 is also used to receive instructions from the operator and control the switch of the X - ray source 101, the working state of the detector 102, the display and storage of the imaging system 103, etc. The control system 104 may also have safety protection functions, such as overload protection, over - temperature protection, etc., to ensure the safe operation of the X - ray device 1.

[0038] The structure of the X-ray device 1 is not limited in this application. For example, the X-ray device 1 may omit the detector 102, the imaging system 103, etc. The X-ray device 1 may be, but is not limited to, X-ray photoelectron spectroscopy (XPS), X-ray diffractometer (XRD), X-ray fluorescence spectroscopy (XRF), or small-angle X-ray scattering (SAXS). X-ray photoelectron spectroscopy (XPS) is used for the analysis of surface elements and thickness of materials. X-ray diffractometer (XRD) is used for the analysis of crystal structure of materials. X-ray fluorescence spectroscopy (XRF) is used for the analysis of surface elements and thickness of materials. Small-angle X-ray scattering (SAXS) is used for the analysis of surface structure of materials, etc.

[0039] Since the X-ray yield is directly related to the intensity of the electron beam, the maximum intensity of the electron beam that the target material of the anode can withstand directly determines the quality, intensity, and lifespan of the X-ray source, and thus largely determines the performance of the X-ray device such as accuracy and efficiency. A related technology provides an anode, including a base and a target material vapor-deposited on the base. Since a large amount of heat is generated when the electron beam bombards the target material, the target material is prone to peeling off from the base due to heat, affecting the service life of the X-ray source. Also, the target material is easily evaporated due to high temperature.

[0040] Based on this, please refer to Figure 3 and Figure 4 , an embodiment of this application provides an anode 10, which includes a base 11, a diamond carrier 12, and a target material 13. The materials of the base 11 and the diamond carrier 12 both include diamond, and the base 11 is formed by co-firing diamond powder and copper powder. The diamond carrier 12 is fixed to the base 11, and the diamond carrier 12 is used to carry the target material 13. The target material 13 is disposed on the diamond carrier 12, and the target material 13 is used for the electron beam to bombard to generate X-rays.

[0041] In the anode 10 provided by this application, since the diamond carrier 12 has excellent strength and thermal conductivity, using the diamond carrier 12 to carry the target material 13 is beneficial to enhancing the electron beam power density threshold that the target material 13 can withstand and improving the light intensity of the X-rays generated by the target material 13.

[0042] Diamond has an extremely high thermal conductivity, and copper also has a relatively high thermal conductivity. For example, the thermal conductivity of diamond is about 2000 W / m·K, and the thermal conductivity of copper is about. The base 11 is formed by co-firing diamond and copper powder, which is beneficial to improving the thermal conductivity of the base 11. In addition, during the sintering process of diamond and copper powder, the thermal expansion coefficient of the composite material formed by co-firing diamond and copper will be between that of diamond and copper, and the diamond carrier 12 includes diamond, which makes the thermal expansion coefficient of the base 11 closer or more matched with that of the diamond carrier 12.

[0043] When the target material 13 is bombarded by the electron beam and generates a large amount of heat, the heat is transferred to the base 11, and the base 11 will be heated. Since the base 11 is made by co-firing diamond and copper powder, the material made of the diamond carrier 12 includes diamond, which reduces the difference in thermal expansion coefficients between the base 11 and the diamond carrier 12. In this way, the possibility of cracking of the diamond carrier 12 due to stress generated by the difference in thermal expansion coefficients between the base 11 and the diamond carrier 12 can be reduced, which is beneficial to extend the service life of the anode 10.

[0044] In addition, the base 11 is made by co-firing diamond powder and copper powder, and has a lower cost than a base made of pure diamond.

[0045] In some embodiments of the present application, the base 11 and the diamond carrier 12 are fixed by welding, that is, the base 11 and the diamond carrier 12 are integrally formed, which improves the bonding strength and bonding stability between the base 11 and the diamond carrier 12.

[0046] The target material 13 can be formed on the diamond carrier 12 by evaporation, but is not limited to it. The anode 10 is suitable for use in an ultra-high vacuum environment. It is understood that the present application does not limit the anode 10 to be used in an ultra-high vacuum environment.

[0047] It is to be understood that the present application does not limit the base 11 to be formed by a co-firing process of diamond powder and copper powder. For example, diamond may be doped into copper.

[0048] In some embodiments of the present application, the diamond carrier 12 is fixed to the base 11 by a brazing process. Brazing refers to a welding method in which a brazing material with a melting point lower than the welding part and the welding part are heated to the melting temperature of the brazing material at the same time, and then the gap of the solid workpiece is filled with liquid brazing material to connect the metals. The surface of the diamond carrier 12 may be provided with a metallized transition layer to improve the bonding strength and bonding stability between the diamond carrier 12 and the base 11.

[0049] The anode 10 may also include a phase change heat pipe 15, which is used for phase change heat dissipation. The principle of phase change heat dissipation is to utilize the property of a substance to absorb or release a large amount of heat when the phase state changes, and to control the temperature through the heat absorption and heat release process of the phase change material, thereby achieving the purpose of heat dissipation. On the basis of liquid cooling, the anode 10 is also provided with a phase change heat pipe 15, so that the anode 10 combines the two heat dissipation methods of liquid cooling and phase change heat dissipation, which can greatly improve the heat dissipation speed and efficiency of the anode 10. In this way, the heat generated by the target material 13 can be quickly dissipated through the cooling medium and the phase change heat pipe 15, which greatly reduces the temperature of the target material 13 and further reduces the possibility of the target material 13 being evaporated. In addition, since the heat of the target material 13 can be quickly extracted, the power density threshold of the electron beam that the target material 13 can withstand can be further increased, thereby further increasing the light intensity of the X-rays generated by the target material 13.

[0050] In some embodiments, the material of the base 11 may include at least one of silver, gold, tungsten, copper, zinc, aluminum nitride, and silicon carbide.

[0051] The base 11 is provided with a cooling channel 112 for circulating a cooling working fluid to perform liquid cooling on the base 11 when the anode 10 is heated, thereby improving the heat dissipation efficiency of the anode 10. The heat generated when the target 13 is bombarded by the electron beam can be conducted to the cooling working fluid through the diamond carrier 12 and discharged from the base 11 by the cooling working fluid. Since the heat of the target 13 is conducted out of the base, the temperature of the target 13 is reduced, which helps to reduce the possibility of evaporation of the target 13 due to overheating at high temperatures.

[0052] The cooling channel 112 includes an inlet 1122 and an outlet 1124. The inlet 1122 is used to connect to an inlet pipeline to input the cooling working fluid. The outlet 1124 is used to connect to an outlet pipeline to output the cooling working fluid.

[0053] The cooling working fluid can be a coolant, such as water, ethylene glycol solution, propylene glycol solution, or fluorinated liquid, etc. The cooling working fluid can also include a gas. The working fluid can be a single component or can be composed of at least two cooling working fluids mixed together (for example, a mixture composed of at least two coolants). The cooling working fluid can remain single-phase (i.e., no phase change occurs) during the flow process or can be two-phase (i.e., it converts between the liquid phase and the gas phase). It can be understood that the type of cooling working fluid required can be selected according to needs.

[0054] The base 11 further includes at least one turbulence structure 1126 protruding from the inner wall of the cooling channel 112. The turbulence structure 1126 is used to make the cooling working fluid flowing in the cooling channel form turbulence, so as to change the flow rate and flow direction of the cooling working fluid in the cold channel, thereby accelerating the heat transfer in the cooling working fluid and improving the cooling effect of the anode 10.

[0055] The number of the turbulence structures 1126 can be multiple. The multiple turbulence structures 1126 can be arranged along the extending direction of the cooling channel 112, so that multiple regions in the extending direction of the cooling channel are distributed with the turbulence structures 1126, improving the uniformity of liquid cooling of the base 11 in the extending direction of the cooling channel 112. It can be understood that the distribution manner of the multiple turbulence structures 1126 is not limited in this application. In some embodiments, the turbulence structure 1126 can include protrusions and / or depressions to form an irregular structure.

[0056] The base 11 further includes a receiving cavity 114 for receiving the phase change heat pipe 15. Since the phase change heat pipe 15 is disposed inside the base 11, the phase change heat pipe 15 does not occupy the external space of the base 11, which is beneficial to reducing the volume and occupied space of the anode 10. The receiving cavity 114 is separately provided from the cooling channel 112, and the phase change heat pipe 15 received in the receiving cavity 114 is protected, which is beneficial to extending the service life of the phase change heat pipe 15 received in the receiving cavity 114. Each turbulence structure 1126 encloses a receiving groove 118 communicating with the receiving cavity 114 for receiving a part of the phase change heat pipe 15.

[0057] The heat generated when the target 13 is bombarded by the electron beam is dissipated into the base 11 through the diamond carrier 12, triggering the heat dissipation of the phase change heat pipe 15. The heat absorbed by the phase change heat pipe 15 is transferred to the cooling channel after being discharged through phase change, and then taken away by the cooling working medium.

[0058] The receiving cavity 114 is located between the diamond carrier 12 and the cooling channel 112, and the phase change heat pipe 15 is located in the receiving cavity 114, that is, the phase change heat pipe 15 is located between the diamond carrier 12 and the cooling channel 112. Compared with liquid cooling, the heat dissipation of the phase change heat pipe 15 is faster. When the target 13 is heated up by the electron beam bombardment, since the phase change heat pipe 15 with faster heat dissipation is disposed between the diamond carrier 12 and the cooling channel 112, the phase change heat pipe 15 can quickly absorb a large amount of heat for phase change heat dissipation, thereby quickly reducing the temperature of the target 13, which is beneficial to further improving the heat dissipation efficiency of the anode 10.

[0059] The surface of the base 11 is recessed with a groove 116 for receiving the diamond carrier 12. At least a part of the diamond carrier 12 is received in the groove 116. On the one hand, the groove 116 can position the diamond carrier 12 when it is assembled to the base 11, and on the other hand, it can reduce the size of the base 11 in the stacking direction of the diamond carrier 12. It can be understood that the groove 116 can be omitted.

[0060] The phase change heat pipe 15 is provided with a channel for receiving a phase change working medium. In some embodiments of the present application, the diameter range of the channel is [10 μm, 1000 μm]. Therefore, the phase change heat pipe 15 can also be called a micro phase change heat pipe 15. The micro phase change heat pipe 15 can, based on the principle of capillary action, realize the efficient transfer and dissipation of heat through the evaporation and condensation process of the phase change working medium in the micro channel.

[0061] The base 11 further includes nanostructures provided on the inner surface of the channel. Nanostructures refer to the structures of objects with sizes between the molecular and micron scales. Nanostructures can be one-dimensional, two-dimensional, or three-dimensional structures. For example, the nanostructures can include at least one of nanotubes, nanorods, nanoclusters, and nanolayers. The nanostructures can be formed, but are not limited to, by coating a nanoparticle coating, a nanocomposite layer, etc. on the inner surface of the channel. The nanostructures can increase the contact area between the inner surface of the channel and the phase change working fluid, thereby facilitating the enhancement of the heat conduction efficiency, reducing the thermal resistance, and improving the heat dissipation efficiency of the phase change heat pipe 15.

[0062] The phase change heat pipe 15 includes a main body 151, at least one first branch 153, and at least one second branch 155. Both the first branch 153 and the second branch 155 protrude from the main body 151. The first branch 153 is located on one side of the main body 151 facing the cooling channel 112. The second branch 155 is located on one side of the main body 151 facing the diamond carrier 12. Both the main body 151 and the first branch 153 are provided with interconnected channels. The main body 151, the first branch 153, and the second branch 155 are all provided with channels. Each first branch 153 is received in a corresponding receiving groove 118.

[0063] First, at least one first branch 153 and at least one second branch 155 protruding from the main body 151 can increase the heat dissipation area of the phase change heat pipe 15 and improve the heat dissipation efficiency of the phase change heat pipe 15.

[0064] Secondly, the first branch 153 is received in the receiving groove 118 surrounded by the corresponding turbulent structure 1126, so that the heat discharged by the phase change of the first branch 153 reaches the cooling working fluid in the cooling channel 112 through the turbulent structure 1126, and the turbulent structure 1126 protrudes from the inner wall of the cooling channel 112, increasing the contact area between the cooling working fluid and the inner wall of the cooling channel 112, which is beneficial to improving the speed of the heat discharged from the phase change heat pipe 15 to the inside of the cooling channel 112, thereby being beneficial to improving the heat dissipation efficiency of the anode 10. In addition, the first branch 153 is received in the receiving groove 118 surrounded by the turbulent structure 1126, without increasing the size of the base 11 in the arrangement direction of the target 13, the diamond carrier 12, and the phase change heat pipe 15, which is beneficial to the miniaturization of the anode 10.

[0065] It can be understood that the structure and shape of the phase change heat pipe 15 in this application are not limited. For example, the first branch 153 and the second branch 155 of the phase change heat pipe 15 can be omitted.

[0066] In some possible implementations, the phase change heat pipe 15 is accommodated in the cooling channel 112, and the cooling channel 112 is used for the circulation of the cooling working fluid. The inner wall of the cooling channel 112 is provided with a turbulence structure 1126, and the turbulence structure 1126 encloses a receiving groove 118, and a part of the phase change heat pipe 15 is received in the receiving groove 118. The phase change heat pipe 15 is accommodated in the cooling channel 112. The phase change heat pipe 15 shares the cooling channel with the cooling working fluid, and there is no need to separately provide a space on the base 11 to accommodate the phase change heat pipe 15, which is beneficial to reducing the volume of the base 11. In addition, since the phase change heat pipe 15 shares the cooling channel with the cooling working fluid, the phase change heat pipe 15 can be in direct contact with the cooling working fluid, which is beneficial to improving the heat exchange efficiency and thus improving the heat dissipation effect of the base 11.

[0067] The present application also discloses a semiconductor device, including the X-ray device in the foregoing embodiment. The semiconductor device may be a thin film deposition device, a measurement device, an etching device, an oxidation device, a device testing device, etc., and can detect and analyze the components, chemical states, etc. in the semiconductor manufacturing process based on the X-ray device.

[0068] It should be understood that expressions such as "including" and "may include" that can be used in the present application indicate the existence of the disclosed functions, operations, or constituent elements, and do not limit one or more additional functions, operations, and constituent elements. In the present application, terms such as "including" and / or "having" can be interpreted as indicating a specific characteristic, number, operation, constituent element, component, or a combination thereof, but cannot be interpreted as excluding the existence or the possibility of adding one or more other characteristics, numbers, operations, constituent elements, components, or a combination thereof.

[0069] In addition, in the present application, the expression "and / or" includes any and all combinations of the associated listed words. For example, the expression "A and / or B" may include A, may include B, or may include both A and B.

[0070] In the present application, expressions including ordinal numbers such as "first" and "second" can modify each element. However, such elements are not limited by the above expressions. For example, the above expressions do not limit the order and / or importance of the elements. The above expressions are only used to distinguish one element from other elements. For example, the first user device and the second user device indicate different user devices, although the first user device and the second user device are both user devices. Similarly, without departing from the scope of the present application, the first element may be referred to as the second element, and similarly, the second element may also be referred to as the first element.

[0071] When a component is referred to as "connected" or "coupled" to another component, it should be understood that the component is not only directly connected or coupled to the other component, but there may also be another component between the component and the other component. On the other hand, when a component is referred to as "directly connected" or "directly coupled" to another component, it should be understood that there is no component between them.

[0072] As described above, the above is only a specific embodiment of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present application can easily think of changes or substitutions, which should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. An anode, characterized in that: The anode includes a base, a diamond carrier and a target material; the base and the diamond carrier are made of diamond, the base is formed by co-firing diamond powder and copper powder, the diamond carrier is fixed to the base, the target material is arranged on the diamond carrier, and the target material is used for electron beam bombardment to generate X-rays.

2. The anode according to claim 1, characterized in that The base is provided with a cooling channel, and the cooling channel is used for circulating a cooling medium.

3. The anode according to claim 2, characterized in that The base also includes a containing cavity, the phase change heat pipe is contained in the containing cavity, and the phase change heat pipe is used for phase change heat dissipation.

4. The anode according to claim 3, characterized in that The phase-change heat pipe includes a trunk and at least one first branch protruding from the trunk.

5. The anode according to claim 4, characterized in that The phase-change heat pipe further includes at least one second branch protruding from the trunk, and the second branch and the first branch are arranged on two opposite sides of the trunk.

6. The anode according to claim 3, characterized in that The phase-change heat pipe is accommodated in the accommodating cavity, and the phase-change heat pipe is located between the diamond bearing component and the cooling channel.

7. The anode according to any one of claims 3 to 6, characterized in that: The base further includes at least one turbulent flow structure protruding from the inner wall of the cooling channel.

8. The anode according to claim 7, characterized in that Each of the turbulent structures forms a receiving groove communicated with the accommodating cavity, and a portion of the phase change heat pipe is accommodated in the corresponding receiving groove.

9. The anode according to any one of claims 3 to 7, characterized in that: The phase-change heat pipe is provided with a channel for accommodating a phase-change working medium, and the diameter of the channel ranges from [10 μm to 1000 μm].

10. The anode according to any one of claims 3 to 8, characterized in that: The phase-change heat pipe is provided with a channel for accommodating a phase-change working medium, and the inner surface of the channel is provided with a nanostructure.

11. The anode according to any one of claims 1 to 10, characterized in that: The diamond bearing member is fixed to the base by welding.

12. The anode according to any one of claims 1 to 11, characterized in that: The target material is formed on a side of the diamond carrier away from the base by evaporation.

13. An X-ray source, characterized in that: The X-ray source comprises a cathode and an anode according to any one of claims 1 to 12, wherein the cathode is used to emit an electron beam to the target material, and the target material is used to emit X-rays under the bombardment of the electron beam.

14. An X-ray device, characterized in that: The X-ray device comprises an X-ray source according to claim 13 and a control system, wherein the control system is used to control the X-ray source.

15. A semiconductor device, characterized in that: Comprising the X-ray device of claim 14.

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