Display device and preparation method thereof

Abstract

The invention relates to a display device and a preparation method thereof. The display device comprises a substrate; the light-emitting structure is located on one side of the substrate, and the light-emitting structure comprises a transparent conductive layer; the anti-dazzle structure is located on the side, opposite to the substrate, of the light-emitting structure, and the anti-dazzle structure comprises an insulating layer and a glass layer which are arranged in a stacked mode; wherein the insulating layer is located between the transparent conductive layer and the glass layer, and the insulating layer is configured to protect the light-emitting structure. The anti-dazzle structure is arranged on the light-emitting structure, and particularly the insulating layer is arranged, so that concave and convex points on the surface of the glass layer can be filled and leveled up, and reflection of light rays on the surface of the glass layer is effectively reduced; besides, the insulating layer is arranged between the transparent conductive layer and the glass layer, so that the damage of static electricity to the light-emitting structure is effectively reduced, meanwhile, the corrosion of harmful substances in the glass layer to the transparent conductive layer is effectively prevented, the stability and the reliability of the light-emitting structure are improved, and the service life of the display device is prolonged.

Description

Technical Field

[0001] The present application relates to the field of display technology, and particularly to a display device and a method for manufacturing the same. Background Art

[0002] In the field of display technology, the performance and user experience of display devices have always been the focus of research and development. Traditional transparent glass has exposed many problems in practical applications, which have significantly restricted the display effect and usability.

[0003] Traditional transparent glass has a relatively high reflectivity and can reflect, for example, 8% of the objects behind the glass. This not only causes interference due to the reflection of external light on the glass surface during the display process, reducing the clarity and contrast of the displayed content, but also makes it difficult for observers to clearly see the information presented by the display device, causing visual impairment. Especially in scenes with strong ambient light, the reflected light and the display light are superimposed, seriously affecting the visibility of the display. For example, in the case of a display screen used outdoors, the strong sunlight reflection makes the screen content almost unrecognizable.

[0004] In terms of protecting the internal components of the display device, traditional glass also has deficiencies. For the optical glass near the RGB chip, the uneven points on its surface that are invisible to the naked eye are prone to form reflections, affecting the display quality; and the glass needs to go through multiple processes during processing, such as etching with acid substances, and the residual inorganic salts and harmful substances may corrode sensitive components such as the ITO film connected thereto, affecting the performance and lifespan of the display device. At the same time, the optical glass itself does not have electrostatic protection capabilities, and static electricity may damage the RGB chip and the circuit board, resulting in abnormal display. Summary of the Invention

[0005] Based on this, the embodiments of the present application provide a display device and a method for manufacturing the same. By providing an insulating layer between the transparent conductive layer and the glass layer, the damage of static electricity to the light-emitting structure is effectively reduced, and at the same time, the corrosion of the transparent conductive layer by harmful substances in the glass layer is effectively prevented, improving the stability and reliability of the light-emitting structure.

[0006] The embodiments of the present application first provide a display device, which includes:

[0007] A substrate;

[0008] A light-emitting structure located on one side of the substrate, the light-emitting structure including a transparent conductive layer;

[0009] An anti-glare structure located on the side of the light-emitting structure facing away from the substrate, the anti-glare structure including a stacked insulating layer and a glass layer;

[0010] Wherein, the insulating layer is located between the transparent conductive layer and the glass layer, and the insulating layer is configured to protect the light-emitting structure.

[0011] In one embodiment, the insulating layer includes a silicon dioxide thin film.

[0012] In one embodiment, the anti-glare structure further includes a protective layer, and the protective layer is located on a side of the glass layer away from the insulating layer.

[0013] In one embodiment, the glass layer includes a first optical glass, a PVB film, and a second optical glass that are stacked, and the insulating layer is disposed on a side of the first optical glass away from the PVB film;

[0014] The protective layer is an AF film layer.

[0015] In one embodiment, a silicon dioxide thin film is disposed between the first optical glass and the PVB film;

[0016] And / or, a silicon dioxide thin film is disposed on a side of the second optical glass facing the PVB film;

[0017] And / or, a silicon dioxide thin film is disposed on a side of the second optical glass away from the PVB film.

[0018] In one embodiment, the anti-glare structure further includes an anti-reflection layer, and the anti-reflection layer is located on a side of the glass layer away from the insulating layer.

[0019] In one embodiment, the anti-reflection layer includes at least one of an aluminum oxide film, a titanium dioxide film, and a magnesium fluoride film;

[0020] The thickness of the aluminum oxide film is 1 / 4 optical thickness, the thickness of the titanium dioxide film is 1 / 2 optical thickness, and the thickness of the magnesium fluoride film is 1 / 4 optical thickness.

[0021] In one embodiment, the anti-reflection layer includes an aluminum oxide film, a titanium dioxide film, and a magnesium fluoride film that are sequentially stacked in a direction away from the glass layer;

[0022] The thickness of the anti-reflection layer is between 1 μm and 100 μm;

[0023] The glass layer includes optical glass, and the thickness of the optical glass is between 0.7 mm and 14 mm.

[0024] In one embodiment, the transparent conductive layer includes a first transparent conductive layer and a second transparent conductive layer;

[0025] The light-emitting structure is located on one side of the substrate in the first direction. The light-emitting structure includes a first electrode, a first transparent conductive layer, a first semiconductor layer, a second semiconductor layer, a second transparent conductive layer, and a second electrode arranged in sequence along the second direction; wherein, the first direction and the second direction intersect.

[0026] In one embodiment, the first transparent conductive layer includes: a first sub-transparent conductive layer, located on one side of the substrate in the first direction and between the first electrode and the first semiconductor layer; a second sub-transparent conductive layer, at least located on the side of the first sub-transparent conductive layer away from the substrate;

[0027] The second transparent conductive layer includes: a third sub-transparent conductive layer, located on one side of the substrate in the first direction and between the second semiconductor layer and the second electrode; a fourth sub-transparent conductive layer, at least located on the side of the third sub-transparent conductive layer close to the substrate.

[0028] An embodiment of the present application also provides a method for manufacturing a display device. The manufacturing method includes:

[0029] Providing a substrate;

[0030] Forming a light-emitting structure on one side surface of the substrate; wherein, the light-emitting structure includes a transparent conductive layer;

[0031] Forming the anti-glare structure on the side of the light-emitting structure facing away from the substrate; wherein, the anti-glare structure includes a stacked insulating layer and a glass layer, and the insulating layer is sputtered on at least one side surface of the glass layer by magnetron sputtering.

[0032] In the above display device and its manufacturing method, by providing an anti-glare structure on the light-emitting structure, especially the setting of the insulating layer can fill the uneven points on the surface of the glass layer, so as to effectively reduce the reflection of light on the surface of the glass layer. Compared with the relatively high reflectivity of traditional transparent glass, the reflectivity of the display device in this example is significantly reduced; in addition, the insulating layer provided between the transparent conductive layer and the glass layer effectively reduces the damage of static electricity to the light-emitting structure, and at the same time effectively prevents the corrosion of harmful substances in the glass layer to the transparent conductive layer, improves the stability and reliability of the light-emitting structure, and extends the service life of the display device. Description of the Drawings

[0033] Figure 1 It is a schematic diagram of the overall structure of a display device provided according to some embodiments of the present application.

[0034] Figure 2 It is a schematic diagram of the overall structure of an anti-glare structure provided according to some embodiments of the present application Figure 1 .

[0035] Figure 3 Schematic diagram of the overall structure of the anti-glare structure provided according to some embodiments of the present application Figure 2 .

[0036] Figure 4 One of the schematic diagrams of the structure of the light-emitting structure provided according to some embodiments of the present application

[0037] Figure 5 Schematic diagram of the light-emitting principle of the light-emitting structure provided according to some embodiments of the present application

[0038] Figure 6 Schematic cross-sectional view of the light-emitting structure provided according to some embodiments of the present application

[0039] Figure 7 Schematic cross-sectional view of the display device provided according to some embodiments of the present application

[0040] Figure 8 Flow chart of the manufacturing method of the display device provided according to some embodiments of the present application

[0041] 10. Substrate;

[0042] 20. Light-emitting structure; 200. First electrode; 210. First sub-electrode; 220. Second sub-electrode; 400. First semiconductor layer; 500. Second semiconductor layer; 700. Second electrode; 710. Third sub-electrode; 720. Fourth sub-electrode;

[0043] 30. Transparent conductive layer; 300. First transparent conductive layer; 310. First sub-transparent conductive layer; 320. Second sub-transparent conductive layer; 600. Second transparent conductive layer; 610. Third sub-transparent conductive layer; 620. Fourth sub-transparent conductive layer;

[0044] 90. Anti-glare structure; 910. Insulating layer; 920. Glass layer; 921. First optical glass; 922. PVB film; 923. Second optical glass; 924. Silicon dioxide film; 930. Protective layer; 940. Anti-reflection layer; 941. Aluminum oxide film; 942. Titanium dioxide film; 943. Magnesium fluoride film. Detailed implementation manners

[0045] To make the above objects, features and advantages of the present application more obvious and understandable, the following will describe the detailed implementation manners of the present application with reference to the accompanying drawings. Many specific details are set forth in the following description in order to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0046] In the description of the present application, it should be understood that if there are terms such as "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., the orientation or positional relationship indicated by these terms is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present application.

[0047] In addition, if there are terms such as "first" and "second", these terms are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present application, if there is a term "plurality", the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise specifically and clearly defined.

[0048] In the present application, unless otherwise clearly stipulated and defined, if there are terms such as "mounted", "connected", "connected to", "fixed", etc., these terms should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements or the interaction relationship between two elements, unless otherwise clearly defined. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0049] In the present application, unless otherwise clearly stipulated and defined, if there is a description such as a first feature being "above" or "below" a second feature, etc., the meaning may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on" the second feature may mean that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "beneath" and "under" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0050] It should be noted that if an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there may be an intermediate element. If an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. If present, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are only for illustrative purposes and do not represent the only implementation.

[0051] As described in the background art, traditional transparent glass has a high reflectivity and reflects 8% of the objects behind the glass. This not only causes interference due to the reflection of external light on the glass surface during the display process, reducing the clarity and contrast of the displayed content, but also makes it difficult for the observer to clearly see the information presented by the display device, causing visual impairment. Especially in scenes with strong ambient light, the reflected light and the display light are superimposed on each other, seriously affecting the visibility of the display. For example, in the case of a display screen used outdoors, the strong sunlight reflection makes the screen content almost unrecognizable.

[0052] In terms of protecting the internal components of the display device, traditional glass also has deficiencies. For the optical glass close to the RGB chip, the uneven points on its surface that are invisible to the naked eye are prone to form reflections, affecting the display quality; and the glass needs to go through multiple processes during processing, such as etching with acid substances, and the residual inorganic salts and harmful substances may corrode sensitive components such as the ITO film connected to it, affecting the performance and lifespan of the display device. At the same time, the optical glass itself does not have electrostatic protection ability, and static electricity may damage the RGB chip and the circuit board, resulting in abnormal display.

[0053] In addition, in the daily use of traditional display devices, due to the lack of effective anti-fingerprint and anti-fouling measures, the glass surface is easily stained with fingerprints, oil stains and other stains. These stains not only affect the appearance, but also further interfere with light propagation, reducing the display effect, and the cleaning process is rather cumbersome, bringing a lot of inconvenience to users.

[0054] Based on the above problems, the embodiments of the present application provide a display device and a manufacturing method thereof. By providing an insulating layer on one side of the glass layer close to the transparent conductive layer, on the basis of effectively reducing the reflectivity, the protection ability for the chip structure can also be improved.

[0055] Refer to Figure 2 and Figure 3 , Figure 2 is the overall structural schematic diagram of the anti-glare structure provided according to some embodiments of the present application Figure 1 . Figure 3 is the overall structural schematic diagram of the anti-glare structure provided according to some embodiments of the present application Figure 2。A display device provided by an embodiment of the present application may include a substrate 10, a light-emitting structure 20, and an anti-glare structure 90.

[0056] The light-emitting structure 20 is located on one side of the substrate 10. The light-emitting structure 20 includes a transparent conductive layer 30. The anti-glare structure 90 is located on the side of the light-emitting structure 20 facing away from the substrate 10. The anti-glare structure 90 includes an insulating layer 910 and a glass layer 920 stacked. Among them, the insulating layer 910 is located between the transparent conductive layer 30 and the glass layer 920, and the insulating layer 910 is configured to protect the light-emitting structure 20.

[0057] It can be understood that the display device in this example can be a Mini-LED display device or a Micro-LED display device, which is basically composed of a substrate 10, a light-emitting structure 20, and an anti-glare structure 90. Among them, the substrate 10 is usually a PCB board or glass, and the light-emitting structure 20 includes RGB Mini-LED chips or RGB Micro-LED chips, and electrodes connected to the chips.

[0058] The above light-emitting structure 20 also includes a transparent conductive layer 30. The transparent conductive layer 30 can be made of indium tin oxide (ITO) material, and then an ITO thin film is prepared as the transparent conductive layer 30 by means such as magnetron sputtering. The main function of the ITO transparent conductive layer 30 in this example is to be connected to the ground wire of the RGB chip to conduct out the excess static electricity and prevent the static electricity from burning out the RGB chip and the circuit board. Of course, the above transparent conductive layer 30 can also be selected from zinc oxide transparent conductive materials, etc., which are not limited here.

[0059] By arranging the insulating layer 910 between the transparent conductive layer 30 and the glass layer 920, in one example, the insulating layer 910 includes a silicon dioxide thin film 924. Specifically, a silicon dioxide thin film 924 with a certain thickness can be deposited on the glass layer 920 by plasma enhanced chemical vapor deposition (PECVD) process as the insulating layer 910. The silicon dioxide thin film 924 can effectively fill the uneven points on the surface of the optical glass and reduce reflection. More importantly, the silicon dioxide thin film 924 as the insulating layer 910 can reduce the damage of static electricity to the RGB chip and prevent the precipitation of effective substances such as inorganic salts that may remain in the optical glass from corroding the ITO transparent conductive film.

[0060] In this application, by providing an anti-glare structure 90 on the light-emitting structure 20, especially the provision of the insulating layer 910 can fill the uneven points on the surface of the glass layer 920, so as to effectively reduce the reflection of light on the surface of the glass layer 920. Compared with the relatively high reflectivity of traditional transparent glass, the reflectivity of the display device in this example is significantly reduced; in addition, the insulating layer 910 provided between the transparent conductive layer 30 and the glass layer 920 effectively reduces the damage of static electricity to the light-emitting structure 20, and at the same time effectively prevents the corrosion of the transparent conductive layer 30 by harmful substances in the glass layer 920, improving the stability and reliability of the light-emitting structure 20 and extending the service life of the display device.

[0061] Next, the specific structure of the display device provided by the embodiments of the present application will be introduced in detail with reference to the Figure 1 - attached Figure 7 drawings.

[0062] As Figure 2 shown, in some embodiments, the anti-glare structure 90 further includes a protective layer 930, and the protective layer 930 is located on the side of the glass layer 920 facing away from the insulating layer 910.

[0063] Specifically, the protective layer 930 is located on the side of the glass layer 920 facing away from the insulating layer 910, which can also be understood as that the protective layer 930 serves as the outermost layer of the entire display device. The protective layer 930 can be made of polyethylene terephthalate (PET) film, and the PET film can be adhered to the outside of the glass layer 920 by hot pressing. Since the PET film has good mechanical properties and chemical stability, it can protect the glass layer 920 from being scratched, worn and other damages by the outside world. Of course, in addition to the above PET film, polyurethane (PU) coating, silicone coating, etc. can also be selected as the material of the protective layer 930, and there is no specific limitation here as long as it can protect the outside of the glass layer 920.

[0064] The provision of the protective layer 930 in this example can effectively enhance the protective performance of the glass layer 920, reduce the risk of damage to the glass layer 920 caused by external factors, and extend the service life of the display device; moreover, the provision of the protective layer 930 can effectively prevent the surface of the glass layer 920 from being stained, scratched, etc.

[0065] In one example, the protective layer 930 is an AF (Anti Finger Print) film layer. Specifically, the AF film layer is an anti-fingerprint film layer, and its main function is to use its special surface chemical properties to reduce the surface energy, so that the contact angle of fingerprints, oil stains and other pollutants on its surface increases, making it difficult to adhere to the surface, so as to achieve the effect of anti-fingerprint and anti-oil stain, and at the same time give the object surface a better smooth touch and improve the user experience.

[0066] More specifically, the AF film layer can adopt a baking-heating type perfluoropolyether coating, and a certain thickness of the AF film layer is prepared on the side of the glass layer 920 facing away from the PVB film 922 through a spin coating process. Of course, in addition to the baking-heating type AF film layer, the AF film layer can also be prepared by non-baking heating type or vacuum magnetron sputtering, which is not specifically limited herein.

[0067] As Figure 2 shown, in some embodiments, the glass layer 920 includes a first optical glass 921, a PVB (Polyvinyl Butyral Film) film, and a second optical glass 923 that are stacked. An insulating layer 910 is provided on the side of the first optical glass 921 facing away from the PVB film 922.

[0068] Specifically, the first optical glass 921 and the second optical glass 923 can be selected as high-transparency optical glasses with a relatively small thickness. A certain thickness of the PVB film 922 can be sandwiched in the middle through a hot pressing process to form a laminated glass structure. Among them, the PVB film 922 can be formed by plasticizing and extruding polyvinyl butyral resin with a plasticizer 3GO (triethylene glycol diisooctate). The PVB film 922 has good adhesion to the optical glass and has characteristics such as transparency, heat resistance, cold resistance, moisture resistance, and high mechanical strength. For example, when the glass is subjected to external force impact, the PVB film 922 can absorb and disperse the impact energy, prevent the further expansion of cracks, and can effectively enhance the overall performance of the glass layer 920.

[0069] In this example, the first optical glass 921 and the second optical glass 923 are bonded into a laminated structure through the PVB film 922, which ensures the high light transmittance and optical stability of the glass layer 920, and at the same time improves the mechanical strength and safety of the glass layer 920.

[0070] As Figure 2 shown, in some embodiments, a silica film 924 is provided between the first optical glass 921 and the PVB film 922. Specifically, the silica film 924 can be deposited on the surface of the first optical glass 921 through chemical vapor deposition (CVD) process, physical vapor deposition (PVD) process, etc., so as to fill the micro defects on the surface of the optical glass through the silica film 924, reduce light reflection, and at the same time enhance the adhesion between the first optical glass 921 and the PVB film 922, and improve the structural stability of the glass layer 920.

[0071] In one example, a silica thin film 924 is provided on one side of the second optical glass 923 facing the PVB film 922. Specifically, in the same manner as depositing the silica thin film 924 on the first optical glass 921 side described above, depositing the silica thin film 924 on different optical glass surfaces can further fill the uneven points on the surface of the optical glass and reduce the reflection of light inside the glass layer 920.

[0072] As Figure 2 shown, in one example, a silica thin film 924 is provided on one side of the second optical glass 923 facing away from the PVB film 922. Specifically, in this example, the silica thin film 924 can be deposited on both sides of the first optical glass 921 according to requirements, or the silica thin film 924 can be deposited on both sides of the second optical glass 923 to further fill the uneven points on the surface of the optical glass, reduce the reflection of light inside the glass layer 920, further improve the optical performance of the display device, and make the displayed content clearer. Of course, the silica thin film 924 can also be selectively deposited on one side or both sides of a certain optical glass according to the actual required thickness of the glass layer 920, but no specific limitation is made.

[0073] For the thickness of the above-mentioned silica thin film 924, it can be set according to the surface conditions of different optical glasses and the performance requirements of the actual device. For example, for an optical glass with a relatively large surface roughness, the thickness of the silica thin film 924 can be appropriately increased, but no specific limitation is made.

[0074] In this example, the setting of the silica thin film 924 can also enhance the adhesion between the optical glass and the PVB film 922, improve the stability of the structure of the glass layer 920, reduce problems such as delamination of the glass layer 920 caused by external forces, and improve the reliability of the display device.

[0075] In addition to the above-mentioned glass layer 920 and protective layer 930 structures, it can also be, as Figure 3 shown, in some embodiments, the anti-glare structure 90 further includes an anti-reflection layer 940, and the anti-reflection layer 940 is located on the side of the glass layer 920 facing away from the insulating layer 910.

[0076] Specifically, the anti-reflection layer 940 can be one or more thin films with different refractive indices and thicknesses to improve the anti-reflection effect through the synergistic effect between multiple layers of films. In one example, the anti-reflection layer 940 includes at least one of an alumina film 941, a titanium dioxide film 942, and a magnesium fluoride film 943; the thickness of the alumina film 941 is 1 / 4 optical thickness, the thickness of the titanium dioxide film 942 is 1 / 2 optical thickness, and the thickness of the magnesium fluoride film 943 is 1 / 4 optical thickness.

[0077] It can be understood that the anti-reflection layer 940 uses magnesium fluoride (MgF2 ), a film, for example, a MgF film with a thickness of 1 / 4 optical thickness (when corresponding to the central wavelength of 550 nm, the thickness is about 80 nm) is prepared on the outside of the glass layer 920 by means of electron beam evaporation 2 as the antireflection layer 940. The MgF 2 film can utilize the principle of light interference to reduce the reflection of light on the surface of the glass layer 920 and improve the light transmittance of the display device.

[0078] Similarly, in addition to the MgF 2 film, alumina (Al 2 O 3 ), titanium dioxide (TiO 2 ), etc. can also be selected as the material of the antireflection layer 940. The Al 2 O 3 film has good chemical stability and mechanical properties, and the TiO 2 film has a relatively high refractive index. Through the combination design of different materials, the antireflection effect in a wider wavelength range can be achieved.

[0079] Of course, a multi-layer antireflection film structure can be adopted. For example, on the basis of the MgF 2 film, one or more layers of thin films with different refractive indices and thicknesses are added. For example, a layer of Al 2 O 3 film with a thickness of 1 / 4 optical thickness is first prepared, and then a layer of TiO 2 film with a thickness of 1 / 2 optical thickness is prepared on it. Through the synergistic effect between the multi-layers of films, the antireflection effect is further improved.

[0080] Among them, according to the requirements of different application scenarios and wavelength ranges, the thickness and order of each film layer can be adjusted to achieve a more balanced antireflection effect.

[0081] In this example, through the multi-layer antireflection film structure with a specific thickness and material combination, high-efficiency antireflection in a relatively wide wavelength range is achieved, which can meet the display requirements of different color lights, improve the color restoration degree and visual effect of the display device. Moreover, through the mutual cooperation of the multi-layer film structure, the optical performance stability of the antireflection layer 940 is enhanced, the influence of factors such as environmental temperature and humidity on the antireflection effect is reduced, and the reliability of the display device is improved.

[0082] In addition, in this example, the MgF 2 film as the top layer not only has the antireflection effect, but also enables the coated optical glass itself to have a self-cleaning function, realizing multi-functionality.

[0083] Of course, the above-mentioned protective layer 930 can be provided outside the antireflection layer 940 provided in this example, but no specific limitation is made.

[0084] As shown Figure 3 in some embodiments, the antireflection layer 940 includes, in a direction away from the glass layer 920, an aluminum oxide film 941, a titanium dioxide film 942, and a magnesium fluoride film 943 that are sequentially stacked; the thickness of the antireflection layer 940 ranges from 1 μm to 100 μm; the glass layer 920 includes optical glass, and the thickness of the optical glass ranges from 0.7 mm to 14 mm.

[0085] Specifically, according to different application scenarios and optical performance requirements, the total thickness of the antireflection layer 940 and the thickness of each layer of film can be more finely optimized. For example, the total thickness of the antireflection layer 940 is 5 μm, where the thickness of the aluminum oxide film 941 is 1 μm, the thickness of the titanium dioxide film 942 is 2.5 μm, and the thickness of the magnesium fluoride film 943 is 1.5 μm. The glass layer 920 is optical glass with a thickness of 2 mm.

[0086] It should be noted that the optical glass in this example may have the problem of incomplete cleaning due to being polished through multiple processes, especially etching with acidic substances (hydrofluoric acid, sulfuric acid, etc.). By providing a silicon dioxide thin film 924 between the optical glass and the transparent electrode layer, it is possible to prevent the precipitation of inorganic salts and other harmful substances of the optical glass from corroding the transparent electrode layer, playing a protective role.

[0087] The antireflection layer 940 provided in this application can have a reflectivity lower than 0.5% in the entire optical sensitive band (410 nm - 680 nm), and the light transmittance can reach 95%.

[0088] Refer to Figure 1 and Figures 4 to 7 shown Figure 1 which is a schematic diagram of the overall structure of a display device according to some embodiments of this application. Figure 4 which is one of the schematic diagrams of the structure of a light-emitting structure according to some embodiments of this application. Figure 5 which is a schematic diagram of the light-emitting principle of a light-emitting structure according to some embodiments of this application. Figure 6 which is a schematic cross-sectional structure diagram of a light-emitting structure according to some embodiments of this application. Figure 7 which is a schematic cross-sectional structure diagram of a display device according to some embodiments of this application. In some embodiments, the transparent conductive layer 30 includes a first transparent conductive layer 300 and a second transparent conductive layer 600; the light-emitting structure 20 is located on one side of the substrate 10 in the first direction, and the light-emitting structure 20 includes a first electrode 200, a first transparent conductive layer 300, a first semiconductor layer 400, a second semiconductor layer 500, a second transparent conductive layer 600, and a second electrode 700 that are sequentially arranged in the second direction; wherein, the first direction and the second direction intersect.

[0089] It should be noted that in the embodiments of the present application, the first direction mentioned may be the vertical direction, and the second direction may be the horizontal direction; the first direction may also be the horizontal direction, and the second direction may also be the vertical direction. For the convenience of describing the light-emitting structure 20 provided in the present application, in the embodiments of the present application, the Figure 4 OY direction in Figure 4 is used as the first direction, and the

[0090] OX direction in Figure 4 is used as the second direction.

[0090] The materials of the first electrode 200 and the second electrode 700 can be common conductive materials such as copper and aluminum. The first semiconductor layer 400 and the second semiconductor layer 500 can be semiconductor layers of different conductive types. Exemplarily, the first semiconductor layer 400 can be a P-type semiconductor layer, and the second semiconductor layer 500 can be an N-type semiconductor layer; alternatively, the first semiconductor layer 400 can be an N-type semiconductor layer, and the second semiconductor layer 500 can be a P-type semiconductor layer. Correspondingly, the electrode connected to the P-type semiconductor layer is used as the positive electrode, and the electrode connected to the N-type semiconductor layer is used as the negative electrode.

[0091] The first transparent conductive layer 300 can be used to transfer current between the first electrode 200 and the first semiconductor layer 400, and the second transparent conductive layer 600 can be used to transfer current between the second electrode 700 and the second semiconductor layer 500. The materials of the first transparent conductive layer 300 and the second transparent conductive layer 600 can be one or a combination of at least two of ITO (indium tin oxide), GTO (cadmium-doped tin oxide), GZO (gallium-doped zinc oxide), and ZnO (zinc oxide).

[0092] The light-emitting principle of the light-emitting structure 20 is as Figure 5 shown. After applying a forward voltage through the first electrode 200 and the second electrode 700, the holes injected from the P region into the N region and the electrons injected from the N region into the P region recombine with the electrons in the N region and the holes in the P region near the PN junction respectively, generating fluorescence of spontaneous emission. It can be understood that after applying a forward voltage, a relatively narrow light-emitting layer will be generated between the first semiconductor layer 400 and the second semiconductor layer 500.

[0093] In the embodiments of the present application, compared with the traditional method of sequentially arranging the substrate 10, two semiconductor layers, the transparent conductive layer 30, and the electrode in the first direction, in the present application, the first electrode 200, the first transparent conductive layer 300, the first semiconductor layer 400, the second semiconductor layer 500, the second transparent conductive layer 600, and the second electrode 700 are arranged in the second direction, which can increase the contact area between the semiconductor layer and the transparent conductive layer 30, increase the conductive area of the light-emitting structure 20, and thus improve the conductive performance and light-emitting efficiency of the light-emitting structure 20.

[0094] In some embodiments, the first transparent conductive layer 300 includes: a first sub-transparent conductive layer 310, located on one side of the substrate 10 in the first direction and between the first electrode 200 and the first semiconductor layer 400; a second sub-transparent conductive layer 320, at least located on the side of the first sub-transparent conductive layer 310 away from the substrate 10; the second transparent conductive layer 600 includes: a third sub-transparent conductive layer 610, located on one side of the substrate 10 in the first direction and between the second semiconductor layer 500 and the second electrode 700; a fourth sub-transparent conductive layer 620, at least located on the side of the third sub-transparent conductive layer 610 close to the substrate 10.

[0095] Specifically, the second sub-transparent conductive layer 320 may be only disposed on the side of the first sub-transparent conductive layer 310 away from the substrate 10, or may be disposed on the side of the first sub-transparent conductive layer 310 away from the substrate 10, and on part or all of the surfaces of the first electrode 200 and the first semiconductor layer 400 away from the substrate 10.

[0096] The "T"-shaped transparent conductive layer 30 formed by the first sub-transparent conductive layer 310 and the second sub-transparent conductive layer 320 increases the contact areas between the first semiconductor layer 400 and the first transparent conductive layer 300, and between the first electrode 200 and the first transparent conductive layer 300, thereby increasing the conductive area of the light-emitting structure 20 and improving the light-emitting efficiency of the light-emitting structure 20.

[0097] The fourth sub-transparent conductive layer 620 may be located on the side of the third sub-transparent conductive layer 610 close to the substrate 10, and may also be located on the side of the third sub-transparent conductive layer 610 close to the substrate 10, and on part or all of the surfaces of the second semiconductor layer 500 and the second electrode 700 close to the substrate 10.

[0098] In the embodiments of the present application, the inverted "T"-shaped transparent conductive layer 30 formed by the third sub-transparent conductive layer 610 and the fourth sub-transparent conductive layer 620 increases the contact areas between the second semiconductor layer 500 and the second transparent conductive layer 600, and between the second electrode 700 and the second transparent conductive layer 600, thereby increasing the conductive area of the light-emitting structure 20 and improving the light-emitting efficiency of the light-emitting structure 20.

[0099] In some embodiments, the first electrode 200 includes a first sub-electrode 210 and a second sub-electrode 220. The first sub-electrode 210 is located on one side of the substrate 10 in the first direction. The second sub-electrode 220 is located on the side of the first sub-electrode 210 layer away from the substrate 10. Among them, the extension length of the second sub-electrode 220 in the second direction is less than the extension length of the first sub-electrode 210 in the second direction.

[0100] In some embodiments, the second electrode 700 includes a third sub - electrode 710 and a fourth sub - electrode 720. The third sub - electrode 710 is located on the side of the second transparent conductive layer 600 away from the second semiconductor layer 500, and the fourth sub - electrode 720 is located on the side of the third sub - electrode 710 away from the substrate 10. The extension length of the fourth sub - electrode 720 in the second direction is less than the extension length of the third sub - electrode 710 in the second direction.

[0101] Based on the same inventive concept, as Figure 8 shown, Figure 8 is a flowchart of a method for manufacturing a display device according to some embodiments of the present application. Embodiments of the present application also provide a method for manufacturing a display device, and the manufacturing method may include:

[0102] Step S101, providing a substrate 10;

[0103] Step S102, forming a light - emitting structure 20 on one side surface of the substrate 10; wherein, the light - emitting structure 20 includes a transparent conductive layer 30;

[0104] Step S103, forming an anti - glare structure 90 on the side of the light - emitting structure 20 facing away from the substrate 10; wherein, the anti - glare structure 90 includes an insulating layer 910 and a glass layer 920 arranged in a stacked manner, and the insulating layer 910 is sputtered on at least one side surface of the glass layer 920 by a magnetron sputtering method.

[0105] It can be understood that a light - emitting structure 20 can be formed on one side surface of the substrate 10 in the first direction by using a patterned coating process, a magnetron sputtering process, a printing process or a spraying process.

[0106] By forming a light - emitting structure 20 on one side surface of the substrate 10 in the first direction, the light - emitting structure 20 includes a first electrode 200, a first transparent conductive layer 300, a first semiconductor layer 400, a second semiconductor layer 500, a second transparent conductive layer 600, and a second electrode 700 arranged in sequence along the second direction. Compared with the traditional method of sequentially arranging the substrate 10, two semiconductor layers, the transparent conductive layer 30, and the electrode in the first direction, the technical solution of the present application can increase the contact area between the semiconductor layer and the transparent conductive layer 30, increase the conductive area of the light - emitting structure 20, and thus improve the conductive performance and light - emitting efficiency of the light - emitting structure 20.

[0107] Further, as Figure 6 shown, step S102 includes steps S1021 - S1027.

[0108] S1021, forming a fourth sub - transparent conductive layer 620 on one side of the substrate 10 in the first direction.

[0109] Please refer to Figure 6, a graphic coating process, a magnetron sputtering process, etc. can be used to form a fourth sub-transparent conductive layer 620 on one side of the substrate 10 in the first direction.

[0110] S1022, at least on the first partial surface of the fourth sub-transparent conductive layer 620 away from the substrate 10, form a second semiconductor layer 500.

[0111] Please refer to

[0112] , a graphic coating process, a magnetron sputtering process, etc. can be used to sputter semiconductor materials at least on the first partial surface of the fourth sub-transparent conductive layer 620 away from the substrate 10 to form a second semiconductor layer 500. In addition to the first partial surface of the fourth sub-transparent conductive layer 620 away from the substrate 10, a second semiconductor layer 500 can also be formed on a partial surface of the substrate 10 close to the fourth sub-transparent conductive layer 620. Figure 6

[0113] S1023, on one side of the substrate 10 in the first direction and on one side of the second semiconductor layer 500 in the second direction, form a first semiconductor layer 400.

[0114] Please refer to Figure 6 , a graphic coating process, a magnetron sputtering process, etc. can be used to sputter semiconductor materials on one side of the substrate 10 in the first direction and on one side of the second semiconductor layer 500 in the second direction to form a first semiconductor layer 400.

[0115] S1024, on one side of the substrate 10 in the first direction and on the side of the first semiconductor layer 400 away from the second semiconductor layer 500, form a first electrode 200; there is a first opening between the first electrode 200 and the first semiconductor layer 400, and the first opening exposes the substrate 10.

[0116] Figure 6 Please refer to , a graphic coating process, a magnetron sputtering process, etc. can be used to sputter conductive materials such as copper or aluminum on one side of the substrate 10 in the first direction and on the side of the first semiconductor layer 400 away from the second semiconductor layer 500 to form a first electrode 200. The first opening is used to position the first sub-transparent conductive layer 310 to be formed. Since the first electrode 200 is opaque, a first transparent conductive layer 300 is provided between the first electrode 200 and the first semiconductor layer 400 to increase the light emission brightness of the light-emitting structure 20.

[0117] S1025, on the second partial surface of the fourth sub-transparent conductive layer 620 away from the substrate 10 and on the side of the second semiconductor layer 500 away from the first semiconductor layer 400, form a second electrode 700; there is a second opening between the second electrode 700 and the second semiconductor layer 500, and the second opening exposes the fourth sub-transparent conductive layer 620.

[0118] Please refer to Figure 6 Figure 6 , a second electrode 700 can be formed on the second part of the surface of the fourth sub-transparent conductive layer 620 away from the substrate 10 and on the side of the second semiconductor layer 500 away from the first semiconductor layer 400 by processes such as a graphic coating process and a magnetron sputtering process. The second opening is used to position the third sub-transparent conductive layer 610 to be formed.

[0119] S1026, form a first sub-transparent conductive layer 310 in the first opening and form a third sub-transparent conductive layer 610 in the second opening.

[0120] Please refer to Figure 6 Figure 6 , a first sub-transparent conductive layer 310 can be formed in the first opening and a third sub-transparent conductive layer 610 can be formed in the second opening by processes such as a graphic coating process and a magnetron sputtering process.

[0121] S1027, form a second sub-transparent conductive layer 320 at least on the side of the first sub-transparent conductive layer 310 away from the substrate 10.

[0122] Please refer to Figure 6 Figure 6 , a second sub-transparent conductive layer 320 can be formed at least on the side of the first sub-transparent conductive layer 310 away from the substrate 10 by processes such as a graphic coating process and a magnetron sputtering process. In addition to the side of the first sub-transparent conductive layer 310 away from the substrate 10, the second sub-transparent conductive layer 320 can also be formed on a part or all of the surfaces of the first electrode 200 and the first semiconductor layer 400 away from the substrate 10.

[0123] In step S103, as Figure 7 shown in Figure 7 , by disposing an insulating layer 910 between the transparent conductive layer 30 and the glass layer 920. In one example, the insulating layer 910 includes a silicon dioxide thin film 924. Specifically, a silicon dioxide thin film 924 with a certain thickness can be deposited on the glass layer 920 by a magnetron sputtering process as the insulating layer 910. The silicon dioxide thin film 924 can effectively fill the uneven points on the surface of the optical glass and reduce reflection. More importantly, as the insulating layer 910, the silicon dioxide thin film 924 can reduce the damage of static electricity to the RGB chips and prevent the corrosion of the ITO transparent conductive film caused by the precipitation of effective substances such as inorganic salts that may remain in the optical glass.

[0124] In this application, by providing an anti-glare structure 90 on the light-emitting structure 20, in particular, the provision of the insulating layer 910 can fill the uneven points on the surface of the glass layer 920, so as to effectively reduce the reflection of light on the surface of the glass layer 920. Compared with the relatively high reflectivity of traditional transparent glass, the reflectivity of the display device in this example is significantly reduced; in addition, the insulating layer 910 provided between the transparent conductive layer 30 and the glass layer 920 effectively reduces the damage of static electricity to the light-emitting structure 20, and at the same time effectively prevents the corrosion of the transparent conductive layer 30 by harmful substances in the glass layer 920, improving the stability and reliability of the light-emitting structure 20 and extending the service life of the display device.

[0125] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope described in this specification.

[0126] The above-described embodiments merely represent several implementation manners of this application. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of this application, several modifications and improvements can still be made, and these all belong to the protection scope of this application. Therefore, the protection scope of this application patent shall be subject to the appended claims.

Claims

1. A display device, characterized in that: The display device comprises: substrate; A light emitting structure, located on one side of the substrate, the light emitting structure comprising a transparent conductive layer; an anti-glare structure, located on a side of the light-emitting structure facing away from the substrate, the anti-glare structure comprising an insulating layer and a glass layer stacked; The insulating layer is located between the transparent conductive layer and the glass layer, and the insulating layer is configured to protect the light emitting structure.

2. The display device according to claim 1, characterized in that The insulating layer includes a silicon dioxide film.

3. The display device according to claim 1, characterized in that The anti-glare structure further comprises a protective layer, and the protective layer is located on a side of the glass layer facing away from the insulating layer.

4. The display device according to claim 3, characterized in that: The glass layer comprises a first optical glass, a PVB film and a second optical glass which are stacked, and the insulating layer is arranged on a side of the first optical glass which is away from the PVB film; The protective layer is an AF film layer.

5. The display device according to claim 4, characterized in that: A silicon dioxide film is disposed between the first optical glass and the PVB film; And / or, a silicon dioxide film is provided on a side of the second optical glass facing the PVB film; And / or, a silicon dioxide film is provided on a side of the second optical glass facing away from the PVB film.

6. The display device according to claim 1, characterized in that: The anti-glare structure further includes an anti-reflection layer, and the anti-reflection layer is located on a side of the glass layer away from the insulating layer.

7. The display device according to claim 6, characterized in that: The anti-reflection layer includes at least one of an aluminum oxide film, a titanium dioxide film, and a magnesium fluoride film; The thickness of the aluminum oxide film is 1 / 4 of the optical thickness, the thickness of the titanium dioxide film is 1 / 2 of the optical thickness, and the thickness of the magnesium fluoride film is 1 / 4 of the optical thickness.

8. The display device according to claim 7, characterized in that: The anti-reflection layer includes an aluminum oxide film, a titanium dioxide film and a magnesium fluoride film stacked in sequence in a direction away from the glass layer; The thickness of the anti-reflection layer is between 1 μm and 100 μm; The glass layer comprises optical glass, and the thickness of the optical glass is between 0.7 mm and 14 mm.

9. The display device according to any one of claims 1 to 8, characterized in that: The transparent conductive layer includes a first transparent conductive layer and a second transparent conductive layer; The light emitting structure is located on one side of the substrate in the first direction, and includes a first electrode, a first transparent conductive layer, a first semiconductor layer, a second semiconductor layer, a second transparent conductive layer and a second electrode arranged in sequence along a second direction; wherein the first direction intersects with the second direction.

10. The display device according to claim 9, characterized in that: The first transparent conductive layer includes: a first sub-transparent conductive layer, located on one side of the substrate in the first direction and between the first electrode and the first semiconductor layer; a second sub-transparent conductive layer, located at least on one side of the first sub-transparent conductive layer away from the substrate; The second transparent conductive layer includes: a third sub-transparent conductive layer, located on one side of the substrate in the first direction and between the second semiconductor layer and the second electrode; and a fourth sub-transparent conductive layer, located at least on one side of the third sub-transparent conductive layer close to the substrate.

11. A method for preparing a display device, characterized in that: The preparation method comprises: providing a substrate; A light emitting structure is formed on one side surface of the substrate; wherein the light emitting structure includes a transparent conductive layer; An anti-glare structure is formed on the side of the light-emitting structure facing away from the substrate; wherein the anti-glare structure comprises an insulating layer and a glass layer stacked together, and the insulating layer is sputtered on at least one side of the glass layer by magnetron sputtering.

Images