Aqueous liquid photosensitive photoresist and preparation method thereof

Abstract

The present invention relates to the field of photoresist technology, and more particularly to an aqueous liquid photosensitive photoresist and a preparation method thereof. The aqueous liquid photosensitive photoresist comprises the following raw materials, in parts by weight: 50-70 parts of an acrylic resin emulsion, 2-5 parts of a monomer composition, 8-12 parts of ethoxylated trimethylolpropane triacrylate, 3-6 parts of a photoacid generator, 0.5-1.5 parts of a thickener, 1-3 parts of a modified perfluoropolyether carboxylic acid ammonium, 0.2-0.4 parts of an anti-cratering agent, and 20-24 parts of deionized water. The aqueous liquid photosensitive photoresist prepared by the present invention has excellent etching resistance and high resolution, and the preparation method is simple.

Description

Technical Field

[0001] The present invention relates to the technical field of photoresists, and in particular to an aqueous liquid photosensitive photoresist and a preparation method thereof. Background Art

[0002] Photoresist, also known as photoresist, refers to a material whose solubility changes after exposure to ultraviolet light, electron beams, ion beams, X-rays, or the like. Photoresists are classified into two categories based on the image they form: positive and negative. During the photoresist process, after the coating is exposed and developed, the exposed portion is dissolved, leaving the unexposed portion. This coating material is called a positive photoresist. Traditional photosensitive photoresists generally use acetone, ethanol, chloroform, and the like as solvents. These organic solvents not only pollute the environment, but are also highly volatile during use, potentially posing a health hazard to operators. In addition, with increasingly stringent environmental regulations, reducing solvent usage and finding more environmentally friendly alternative solvents are important areas of research and development in photolithography technology. Relatively little research has been conducted on water-based photoresists, and most existing water-based photoresists suffer from problems such as poor etching resistance and low resolution, making it difficult to meet the requirements of high-precision, high-resolution photolithography.

[0003] Patent CN117986503A discloses a method for preparing a water-soluble photoresist based on triplet annihilation photon upconversion. The method uses amphiphilic surfactant molecules to assemble into micelles. Taking advantage of the hydrophobicity of the micelles' interior and hydrophilicity of the exterior, the lipid-soluble photosensitizer platinum octaethylporphyrin and the annihilation agent 9,10-diphenylanthracene are encapsulated in the hydrophobic cavity of the micelles and dispersed in an aqueous solution. The micelle molecules are then combined with a water-soluble initiator, phenyl (2,4,6-trimethylbenzoyl) lithium phosphate, and a monomer, polyethylene glycol diacrylate, to prepare a water-soluble photoresist based on triplet annihilation photon upconversion. Finally, a continuous laser can be used to excite the upconversion system photosensitizer to transfer the energy of the photon upconversion to the initiator molecules, initiating the polymerization of the water-soluble monomers. This inventive method is simple to operate and can be applied to different photosensitizers and annihilation agent molecules. It also expands the printing application in aqueous environments. However, the etching resistance of acrylic resin formed by polymerization of polyethylene glycol diacrylate monomer is poor.

[0004] Patent CN114647149A discloses a fully water-based, multipurpose silk photoresist based on EvH-transgenic composite silk and its preparation method. The fully water-based, multipurpose silk photoresist is prepared from silkworm strains genetically modified to carry the EvH repeating motif from the moth, and comprises silk fibroin from the transgenic moth and an aqueous solvent. This invention industrializes the production of silkworm silk. Leveraging silk's excellent biocompatibility, biodegradability, and physical and chemical stability, the fully water-based photoresist is produced using silk fibroin, ensuring environmentally friendly processing. The photoresist utilizes genetically modified natural silk fibroin, achieving high-resolution micro-nano patterns by balancing mechanical properties and molecular weight. However, the photoresist preparation method is complex, making industrialization difficult.

[0005] Therefore, there is an urgent need in the market to develop an aqueous liquid photosensitive photoresist with a simple preparation method and excellent etching resistance. Summary of the Invention

[0006] In view of the problems existing in the prior art, the purpose of the present invention is to obtain an aqueous liquid photosensitive photoresist with excellent etching resistance and high resolution and a simple preparation method.

[0007] In order to achieve the above object, the technical solution adopted by the present invention is as follows:

[0008] On one hand, the present invention provides an aqueous liquid photosensitive photoresist, which comprises the following raw materials, in parts by weight: 50-70 parts of acrylic resin emulsion, 2-5 parts of monomer composition, 8-12 parts of ethoxylated trimethylolpropane triacrylate, 3-6 parts of photoacid generator, 0.5-1.5 parts of thickener, 1-3 parts of modified perfluoropolyether carboxylic acid ammonium, 0.2-0.4 parts of anti-cratering agent, and 20-24 parts of deionized water.

[0009] The present invention discloses a water-based liquid photosensitive photoresist obtained by mixing an acrylic resin, a monomer composition, ethoxylated trimethylolpropane triacrylate, a photoacid generator, a thickener, a modified perfluoropolyether carboxylate ammonium, an anti-cratering agent, and deionized water. The resulting material exhibits excellent etch resistance and high resolution, and is prepared using a simple method. The addition of ethoxylated trimethylolpropane triacrylate to the photoresist system allows for the formation of a cross-linked structure during the curing process, which improves the coating's adhesion and enhances its etch resistance.

[0010] In some embodiments, the acid value of the acrylic resin emulsion is 80-100 mgKOH / g.

[0011] In some embodiments, the method for preparing the monomer composition comprises the following steps: adding octafluoropentyl methacrylate to aminoacrylic acid monomer and stirring at 30-40° C. for 1-3 hours to obtain the monomer composition.

[0012] The present application can improve the etching resistance and resolution of acrylic resin by adding a monomer composition to the photoresist. This may be because the cured acrylic resin chain segments contain fluorine side chains and amino functional groups. The introduction of fluorine side chains can improve the transmittance of the photoresist at a specific wavelength and thus improve the acidity and sensitivity of the photoresist, thereby achieving higher photolithography efficiency. In addition, the fluorine side chains can effectively inhibit the migration of photoacids, thereby reducing defects after development and further improving the resolution of the photoresist. The acrylic resin after photolithography contains amino functional groups, which can form chemical bonds with hydroxyl groups or other active groups on the surface of the substrate, thereby improving the adhesion of the photoresist to the substrate and making it stable during etching and cleaning. In addition, the present application can further improve the adhesion of the fluorine-containing acrylic resin segment on the substrate by first mixing octafluoropentyl methacrylate and amino acrylic monomer into a monomer composition and then copolymerizing it with the acrylic resin, thereby helping to improve its etching resistance. This may be because there is a strong hydrogen bond between the fluorine side chain and the amino group. After blending octafluoropentyl methacrylate and amino acrylic monomer, the amino group tends to be distributed near the fluorine side chain, which is beneficial to further improve the adhesion of the fluorine-containing acrylic resin segment on the substrate.

[0013] In some embodiments, the mass ratio of octafluoropentyl methacrylate to aminoacrylic acid monomer is 1:(0.4-0.7).

[0014] The present application specifies the ratio of octafluoropentyl methacrylate and amino acrylic acid monomer to enable the photoresist to have good etching resistance and good resolution at the same time.

[0015] In some embodiments, the aminoacrylic acid monomer is one or more of dimethylaminoethyl methacrylate, dimethylaminoethyl acrylate, diethylaminoethyl methacrylate, diethylaminoethyl acrylate, tert-butylaminoethyl methacrylate, and tert-butylaminoethyl acrylate.

[0016] Preferably, the amino acrylic acid monomer is dimethylaminoethyl acrylate.

[0017] In some embodiments, the photoacid generator is an iodonium salt and / or a sulfonium salt.

[0018] Preferably, the photoacid generator is diphenyliodonium hexafluorophosphate.

[0019] In some embodiments, the thickener is one or more of sodium polyacrylate, hydroxyethyl cellulose, carboxymethyl cellulose, and water-based polyurethane.

[0020] Preferably, the thickener is carboxymethyl cellulose.

[0021] In some embodiments, the method for preparing the modified ammonium perfluoropolyether carboxylate comprises the following steps:

[0022] A1. Add polyethylene glycol to perfluoropolyether carboxylic acid, add a catalyst, react at 70-80°C for 1-2 hours, add terephthalic acid and react for 1-2 hours to obtain a compound;

[0023] A2. Add triethylamine to the compound obtained in step A1, heat to 30-40°C, react for 1-2 hours, and dry to obtain modified perfluoropolyether carboxylate ammonium.

[0024] Perfluoropolyether ammonium carboxylate is an ionic fluorinated surfactant. Its use in the photoresist system of this application ensures good compatibility between its perfluoropolyether segments and the fluorinated side chains of octafluoropentyl methacrylate, thereby enhancing the dispersion of octafluoropentyl methacrylate in water. However, perfluoropolyether segments are highly fluorinated and have low surface energy, while polyacrylates have higher surface energy and polarity. This difference in chemical structure leads to significant differences in intermolecular interactions between the two. Perfluoropolyether segments tend to aggregate, making them difficult to mix evenly with polyacrylate segments. In response to the above problems, the present application introduces a polyethylene glycol segment into a perfluoropolyether carboxylic acid segment, which is then reacted with terephthalic acid to obtain a compound, which is then reacted with triethylamine to synthesize a modified perfluoropolyether carboxylate ammonium containing a polyether segment and a benzene ring group. Adding the modified perfluoropolyether carboxylate ammonium to an aqueous liquid photosensitive photoresist can further improve the corrosion resistance and resolution of the photoresist. This may be because: on the one hand, the introduction of the polyether segment can further improve the hydrophilicity of the perfluoropolyether carboxylate ammonium; on the other hand, the polyether segment can react with polyacrylate, amino acrylic monomer and ethoxylated trimethylolpropane triacrylate It produces stronger hydrogen bonding, and the benzene ring segments on the modified perfluoropolyether carboxylic acid ammonium can produce π-π interactions with polyacrylate acrylic acid and double-bond-containing monomers, which is beneficial to promoting the dispersion of various substances in deionized water, thereby making it easy to introduce the fluorine side chains and amino groups on the monomer composition into the polyacrylate main chain, and can promote the dispersion of ethoxylated trimethylolpropane triacrylate to make the cross-linking structure easier to form, which is beneficial to improving the etching resistance and resolution of the photoresist. Secondly, after the photoresist is cured, the perfluoropolyether segments and some polyester groups are also beneficial to improving the etching resistance of the photoresist.

[0025] In some embodiments, the mass ratio of the polyethylene glycol to the perfluoropolyether carboxylic acid is 1:(0.5-0.8).

[0026] In some embodiments, the mass ratio of the polyethylene glycol to terephthalic acid is 1:(0.2-0.5).

[0027] The present application can make the photoresist have better etching resistance and resolution by limiting the ratio of polyethylene glycol and perfluoropolyether carboxylic acid and the ratio with terephthalic acid. This may be because the modified perfluoropolyether carboxylic acid ammonium can have the best dispersibility under this ratio.

[0028] In some embodiments, the mass ratio of the compound to triethylamine in step A2 is 1:(0.1-0.4).

[0029] In some embodiments, the anti-cratering agent is a polyether siloxane anti-cratering agent.

[0030] Another aspect of the present invention provides a method for preparing an aqueous liquid photosensitive photoresist, comprising the following steps:

[0031] S1. Add acrylic resin emulsion, photoacid generator, thickener, modified perfluoropolyether carboxylic acid ammonium, and anti-crater agent into deionized water and stir at room temperature for 20-30 minutes to obtain a premix;

[0032] S2. Add the monomer composition and ethoxylated trimethylolpropane triacrylate to the premix obtained in step S1, and stir at room temperature for 30-60 minutes to obtain an aqueous liquid photosensitive photoresist.

[0033] Compared with the prior art, the present invention has the following beneficial effects:

[0034] (1) The aqueous liquid photosensitive photoresist obtained by mixing acrylic resin, monomer composition, ethoxylated trimethylolpropane triacrylate, photoacid generator, thickener, modified perfluoropolyether carboxylic acid ammonium, anti-cratering agent and deionized water has excellent etching resistance and high resolution and is simple to prepare.

[0035] (2) The present invention can add a monomer composition to the photoresist to make the cured acrylic resin segment contain fluorine side chains and amino functional groups. The introduction of fluorine side chains can improve the etching resistance of the acrylic resin and the fluorine side chains can effectively inhibit the migration of photoacids, thereby reducing defects after development and further improving the resolution of the photoresist. The amino group can form a chemical bond with the hydroxyl group or other active groups on the surface of the substrate, thereby significantly improving the adhesion of the photoresist to the substrate and making the photoresist stable during etching and cleaning. In addition, the present application can further improve the adhesion of the fluorine-containing acrylic resin segment to the substrate by first mixing octafluoropentyl methacrylate and amino acrylic acid monomer into a monomer composition and then copolymerizing it with the acrylic resin, thereby helping to improve its etching resistance and resolution.

[0036] (3) The present invention introduces a polyethylene glycol segment into a perfluoropolyether carboxylic acid segment, which is then reacted with terephthalic acid to obtain a compound, which is then reacted with triethylamine to synthesize a modified perfluoropolyether carboxylate ammonium containing a polyether segment and a benzene ring group. Adding the modified perfluoropolyether carboxylate ammonium to an aqueous liquid photosensitive photoresist can further improve the corrosion resistance and resolution of the photoresist. DETAILED DESCRIPTION

[0037] The present invention will be described below in conjunction with specific embodiments. It should be noted that the following examples are illustrative of the present invention and are intended only to illustrate the present invention and are not intended to limit the present invention. Other combinations and various modifications within the scope of the present invention may be made without departing from the spirit or scope of the present invention.

[0038] In the following examples and comparative examples, except for the monomer composition, the other compounds and related reagents used can be purchased from the market, wherein the acid value of the acrylic resin emulsion is 80 mgKOH / g; the number average molecular weight of perfluoropolyether carboxylic acid and polyethylene glycol are both 1000; the number average molecular weight of perfluoropolyether carboxylic acid ammonium is 3000-6000, purchased from Wuhan Jiangxin Biotechnology Co., Ltd.; the model of carboxymethyl cellulose is CLHG-005, purchased from Langfang Changlin Cellulose Co., Ltd.; the model of polyether silicone anti-cratering agent is Wet270, purchased from Yinhuang (Shanghai) Industrial Co., Ltd.

[0039] Preparation Example 1

[0040] The preparation method of the monomer composition-1 comprises the following steps: adding 10 g of octafluoropentyl methacrylate to 5.5 g of dimethylaminoethyl acrylate and stirring at 35° C. for 2 hours to obtain the monomer composition-1.

[0041] Preparation Example 2

[0042] The preparation method of monomer composition-2 is the same as that of Preparation Example 1, except that the amount of dimethylaminoethyl acrylate added is 3 g.

[0043] Preparation Example 3

[0044] The preparation method of modified perfluoropolyether carboxylic acid ammonium-1 comprises the following steps:

[0045] A1. Add 10 g of polyethylene glycol to 6.5 g of perfluoropolyether carboxylic acid, add 0.1 g of 98 wt% sulfuric acid, react at 75° C. for 1.5 h, add 3.5 g of terephthalic acid, and react for 1.5 h to obtain a compound;

[0046] A2. Add 2.5 g of triethylamine to 10 g of the compound obtained in step A1, heat to 35° C., react for 1.5 h, and dry to obtain modified perfluoropolyether carboxylate ammonium-1.

[0047] Preparation Example 4

[0048] The preparation method of modified perfluoropolyether carboxylic acid ammonium-2 is the same as that of Preparation Example 3, except that the amount of perfluoropolyether carboxylic acid added is 10 g.

[0049] Preparation Example 5

[0050] The preparation method of modified perfluoropolyether carboxylic acid ammonium-3 is the same as that of Preparation Example 3, except that the amount of terephthalic acid added is 1 g.

[0051] Example 1

[0052] A water-based liquid photosensitive photoresist comprises the following raw materials, measured in parts by weight: 60 parts of acrylic resin emulsion, 3 parts of monomer composition 1, 10 parts of ethoxylated trimethylolpropane triacrylate, 4 parts of diphenyliodonium hexafluorophosphate, 1 part of carboxymethyl cellulose, 2 parts of modified perfluoropolyether ammonium carboxylate 1, 0.3 parts of polyether siloxane anti-cratering agent, and 22 parts of deionized water.

[0053] The method for preparing the aqueous liquid photosensitive photoresist of this embodiment comprises the following steps:

[0054] S1. Adding acrylic resin emulsion, diphenyliodonium hexafluorophosphate, carboxymethyl cellulose, modified perfluoropolyether carboxylate ammonium-1, and polyether silicone anti-cratering agent to deionized water, and stirring at room temperature for 25 minutes to obtain a premix;

[0055] S2. Add monomer composition-1 and ethoxylated trimethylolpropane triacrylate to the premix obtained in step S1, and stir at room temperature for 45 minutes to obtain an aqueous liquid photosensitive photoresist.

[0056] Example 2

[0057] A water-based liquid photosensitive photoresist comprises the following raw materials, measured in parts by weight: 50 parts of acrylic resin emulsion, 2 parts of monomer composition 1, 8 parts of ethoxylated trimethylolpropane triacrylate, 3 parts of diphenyliodonium hexafluorophosphate, 0.5 parts of carboxymethyl cellulose, 1 part of modified perfluoropolyether ammonium carboxylate 1, 0.2 parts of polyether siloxane anti-cratering agent, and 20 parts of deionized water.

[0058] The method for preparing the aqueous liquid photosensitive photoresist of this embodiment comprises the following steps:

[0059] S1. Adding acrylic resin emulsion, diphenyliodonium hexafluorophosphate, carboxymethyl cellulose, modified perfluoropolyether carboxylate ammonium-1, and polyether siloxane anti-cratering agent to deionized water, and stirring at room temperature for 20 minutes to obtain a premix;

[0060] S2. Add monomer composition-1 and ethoxylated trimethylolpropane triacrylate to the premix obtained in step S1, and stir at room temperature for 30 minutes to obtain an aqueous liquid photosensitive photoresist.

[0061] Example 3

[0062] A water-based liquid photosensitive photoresist comprises the following raw materials, measured in parts by weight: 70 parts of acrylic resin emulsion, 15 parts of monomer composition, 12 parts of ethoxylated trimethylolpropane triacrylate, 6 parts of diphenyliodonium hexafluorophosphate, 1.5 parts of carboxymethyl cellulose, 13 parts of modified perfluoropolyether ammonium carboxylate, 0.4 parts of polyether silicone anti-cratering agent, and 24 parts of deionized water.

[0063] The method for preparing the aqueous liquid photosensitive photoresist of this embodiment comprises the following steps:

[0064] S1. Adding acrylic resin emulsion, diphenyliodonium hexafluorophosphate, carboxymethyl cellulose, modified perfluoropolyether carboxylate ammonium-1, and polyether silicone anti-cratering agent to deionized water, and stirring at room temperature for 30 minutes to obtain a premix;

[0065] S2. Add monomer composition-1 and ethoxylated trimethylolpropane triacrylate to the premix obtained in step S1, and stir at room temperature for 60 minutes to obtain an aqueous liquid photosensitive photoresist.

[0066] Example 4

[0067] A water-based liquid photosensitive photoresist and a preparation method thereof. The specific implementation method is the same as that of Example 1, except that an equal amount of monomer composition-1 is replaced by monomer composition-2.

[0068] Example 5

[0069] A water-based liquid photosensitive photoresist and a preparation method thereof. The specific implementation method is the same as that of Example 1, except that an equal amount of modified perfluoropolyether carboxylic acid ammonium-1 is replaced by modified perfluoropolyether carboxylic acid ammonium-2.

[0070] Example 6

[0071] A water-based liquid photosensitive photoresist and a preparation method thereof. The specific implementation method is the same as that of Example 1, except that an equal amount of modified perfluoropolyether carboxylic acid ammonium-1 is replaced by modified perfluoropolyether carboxylic acid ammonium-3.

[0072] Comparative Example 1

[0073] A water-based liquid photosensitive photoresist and a preparation method thereof. The specific implementation method is the same as that of Example 1, except that an equal amount of monomer composition-1 is replaced by dimethylaminoethyl acrylate.

[0074] Comparative Example 2

[0075] A water-based liquid photosensitive photoresist and a preparation method thereof. The specific implementation method is the same as that of Example 1, except that an equal amount of modified perfluoropolyether ammonium carboxylate-1 is replaced by perfluoropolyether ammonium carboxylate.

[0076] Performance Testing

[0077] The aqueous liquid photosensitive photoresist obtained in the above embodiments and comparative examples was spin-coated on the treated silicon wafer and pre-baked on a hot plate at 100° C. for 90 seconds. The spin-coating speed was adjusted so that the thickness of the dried photoresist film was 2.5 μm. The film was exposed to ultraviolet light through a mask and an i-line UV exposure machine at 100 mJ / cm 2 The wafers were exposed to high light intensity for 120 seconds, immersed in a 2.38 wt% tetramethylammonium hydroxide aqueous solution for development for 60 seconds, then washed with deionized water, and baked at 120° C. for 120 seconds to complete the photolithography process and obtain silicon wafers with photolithographic patterns.

[0078] (1) Etching resistance: Each silicon wafer with a photolithographic pattern was placed in a 120 mL / L 95 wt% sulfuric acid aqueous solution, a 40 g / L copper sulfate aqueous solution, and a 4 wt% sodium hydroxide aqueous solution at 55°C, and the longest time that the photolithographic pattern on each silicon wafer with a photolithographic pattern could maintain its pattern integrity was observed and recorded as etching resistance time 1, etching resistance time 2, and etching resistance time 3, respectively.

[0079] (2) Resolution: The resolution is evaluated by observing the circuit resolution of each silicon wafer with a photolithographic pattern using an optical microscope. The smaller the resolution value, the higher the resolution.

[0080] The test results are shown in Table 1:

[0081] Table 1

[0082]

[0083] As can be seen from the data in Table 1, the aqueous liquid photosensitive photoresists of Examples 1-3 have excellent etching resistance and lower resolution values, i.e., higher resolution. A comparison between Example 4 and Example 1 shows that changing the ratio of octafluoropentyl methacrylate and aminoacrylic acid monomer will reduce the adhesion of the photoresist to the substrate, thereby causing the etching resistance and resolution of the photoresist to deteriorate. A comparison between Examples 5 and 6 and Example 1 shows that changing the ratio of polyethylene glycol and perfluoropolyether carboxylic acid or polyethylene glycol and terephthalic acid will deteriorate the dispersibility of the modified perfluoropolyether carboxylic acid ammonium, thereby making it difficult for each monomer to disperse, thereby causing the etching resistance and resolution of the photoresist to deteriorate. A comparison between Comparative Example 1 and Example 1 shows that the resolution and etching resistance of the photoresist decrease when octafluoropentyl methacrylate is not added. A comparison between Comparative Example 2 and Example 1 shows that the etching resistance and resolution of the photoresist are poor when perfluoropolyether carboxylic acid ammonium is directly used.

[0084] The above embodiments are only for illustrating the technical concept and features of the present invention. Its purpose is to enable people familiar with this technology to understand the content of the present invention and implement it. It cannot be used to limit the scope of protection of the present invention. Any equivalent changes or modifications made according to the spirit of the present invention should be included in the scope of protection of the present invention.

Claims

1. An aqueous liquid photosensitive photoresist, characterized in that The composition comprises the following raw materials, in parts by weight: 50-70 parts of acrylic resin emulsion, 2-5 parts of monomer composition, 8-12 parts of ethoxylated trimethylolpropane triacrylate, 3-6 parts of photoacid generator, 0.5-1.5 parts of thickener, 1-3 parts of modified perfluoropolyether carboxylic acid ammonium, 0.2-0.4 parts of anti-cratering agent, and 20-24 parts of deionized water; The preparation method of the monomer composition is as follows: adding octafluoropentyl methacrylate to aminoacrylic acid monomer and stirring at 30-40° C. for 1-3 hours to obtain the monomer composition; The preparation method of the modified perfluoropolyether ammonium carboxylate comprises the following steps: A1. Add polyethylene glycol to perfluoropolyether carboxylic acid, add a catalyst, react at 70-80°C for 1-2 hours, add terephthalic acid and react for 1-2 hours to obtain a compound; A2. Add triethylamine to the compound obtained in step A1, heat to 30-40°C, react for 1-2 hours, and dry to obtain modified perfluoropolyether carboxylate ammonium.

2. The aqueous liquid photosensitive photoresist according to claim 1, characterized in that The acid value of the acrylic resin emulsion is 80-100 mgKOH / g.

3. The aqueous liquid photosensitive photoresist according to claim 1, characterized in that The mass ratio of the octafluoropentyl methacrylate to the amino acrylic acid monomer is 1:(0.4-0.7).

4. The aqueous liquid photosensitive photoresist according to claim 1, characterized in that The amino acrylic acid monomer is one or more of dimethylaminoethyl methacrylate, dimethylaminoethyl acrylate, diethylaminoethyl methacrylate, diethylaminoethyl acrylate, tert-butylaminoethyl methacrylate, and tert-butylaminoethyl acrylate.

5. The aqueous liquid photosensitive photoresist according to claim 1, characterized in that The photoacid generator is an iodonium salt and / or a sulfonium salt.

6. The aqueous liquid photosensitive photoresist according to claim 1, characterized in that The mass ratio of the polyethylene glycol to the perfluoropolyether carboxylic acid is 1:(0.5-0.8).

7. The aqueous liquid photosensitive photoresist according to claim 1, characterized in that The mass ratio of the polyethylene glycol to terephthalic acid is 1:(0.2-0.5).

8. A method for preparing the aqueous liquid photosensitive photoresist according to any one of claims 1 to 7, characterized in that: The following steps are involved: S1. Add acrylic resin emulsion, photoacid generator, thickener, modified perfluoropolyether carboxylate ammonium, and anti-crater agent into deionized water and stir at room temperature for 20-30 minutes to obtain a premix; S2. Add the monomer composition and ethoxylated trimethylolpropane triacrylate to the premix obtained in step S1, and stir at room temperature for 30-60 minutes to obtain an aqueous liquid photosensitive photoresist.

Images